TW575793B - Undercoating composition for photolithographic resist - Google Patents
Undercoating composition for photolithographic resist Download PDFInfo
- Publication number
- TW575793B TW575793B TW86105114A TW86105114A TW575793B TW 575793 B TW575793 B TW 575793B TW 86105114 A TW86105114 A TW 86105114A TW 86105114 A TW86105114 A TW 86105114A TW 575793 B TW575793 B TW 575793B
- Authority
- TW
- Taiwan
- Prior art keywords
- group
- patent application
- undercoating composition
- compound
- photolithographic resist
- Prior art date
Links
- 150000001875 compounds Chemical class 0.000 description 8
- 125000003277 amino group Chemical group 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 150000001412 amines Chemical class 0.000 description 5
- 125000003118 aryl group Chemical group 0.000 description 5
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical group OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000002079 cooperative effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 125000001424 substituent group Chemical group 0.000 description 3
- 229910052770 Uranium Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 125000005843 halogen group Chemical class 0.000 description 2
- 125000002887 hydroxy group Chemical class [H]O* 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical group OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 description 1
- OKMLOOWBNVNGNR-UHFFFAOYSA-N 4-[[4-(diethylamino)phenyl]methylideneamino]-2-nitrophenol Chemical compound C1=CC(N(CC)CC)=CC=C1C=NC1=CC=C(O)C([N+]([O-])=O)=C1 OKMLOOWBNVNGNR-UHFFFAOYSA-N 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N Nitrogen dioxide Chemical class O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Chemical group 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- -1 benzophenone compound Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 150000005690 diesters Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 125000000449 nitro group Chemical class [O-][N+](*)=O 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- CFHIDWOYWUOIHU-UHFFFAOYSA-N oxomethyl Chemical group O=[CH] CFHIDWOYWUOIHU-UHFFFAOYSA-N 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 125000003107 substituted aryl group Chemical group 0.000 description 1
- 229940124543 ultraviolet light absorber Drugs 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Paints Or Removers (AREA)
Description
575793 A8 B8 C8 D8 >、申請專利範圍4 底塗組成物，其中該成份（A 2 )中的A 1或A 2所表經取代 基芳基爲經取代苯基或經取代萘基。 8 .如申請專利範圍第1項之光學照像鈾刻光阻用之 底塗組成物，其中作爲該成份（A 2 )的甲亞胺化合物爲 3-硝基一4一羥基一N—(4-二乙胺基亞苄基）苯胺 〇 9 .如申請專利範圍第1項之光學照像鈾刻光阻用之 底塗組成物，其中作爲成份（A 3 )的芳族甲亞胺化合物 係選自下面構造式所表化合物所成組合之中者： (請先閱讀背面之注意事項再填寫本頁) r·
0H
0H (C2 Hs ) 2N^~CH = N^-〇-CH^C-0-^-N = CH-<g>-N (C2 H5 ) 0 0 訂 (C2 H5 ) N〇2 iN〇2 N普CH = N善0-C鲁C一= 普N (C: HS ) •〇 0 O-C-^C^O (C2H5)2N^CH = N-(〇^0CH3 ch3 0½-N = CH普N (C2 Hs ) 經濟部智慧財產局員工消費合作社印製 N0r (C2 Hs ) z N^-CH = N-<^--〇-C^g) NO： 〇 C-0-^)-N = CH--{g>-N (C2 Hs ) 0 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 575793 A8 B8 C8 D8 申請專利範圍5 〇 IIo-c (C； CH3〇Hg)-N = CHH(g)~N{C2H5) 和 II o-c (C2H5 )2N-<〇)~i 3 C-00 V CH3On(g)-CH = N-(g^N (C2Hs (請先閱讀背面之注意事項再填寫本頁) _裝· 經濟部智慧財產局員工消費合作社印製 1 0 · —種光學照像蝕刻造圖用的光阻材料，其爲一* 積層體，包括： (a ) —基材： (b ) —底塗層，其係用一底塗組成物在該基材的一表面 上形成者，該底塗組成物爲在有機溶劑中的均勻溶液形式 且其包括： (A) —種選自下列（Al) 、 ( A 2 ) 、 （A3)中的 紫外光吸收劑 (A 1 )二苯甲酮化合物，如下通式所表者，其具有至少 一個胺基或經C，- C 6烷基取代基胺基 0 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 5 - 訂 575793 A8 B8 C8 D8 々、申請專利範圍6 _裝—— (請先閱讀背面之注意事項再填寫本頁) 其中下附字m和η彼此獨立地各爲1或2且R 1和R 2彼此獨 立地各表胺基，C i - C 6烷基取代胺基或羥基，一分子中的 R1和R 2所表基中至少有一者爲胺基或*：，— C6烷基取代胺 基， (A 2 )如下通式所表芳族甲亞胺化合物 A1-CH = N- A2 其中A 1和A 2彼此獨立地各表C 6 - C i 〇芳基，且其具有選 自下列所成組合中的取代基：胺基，C 1 一 C 6烷基取代胺基 ，學基，硝基，鹵素原子，Ci—C6烷基和Cp C6烷氧基 ;一分子中的A1和A2中至少有一者爲含胺基或Ci-Cs烷 基取代胺基取代基之C 6 - C i 〇芳基，及 (A 3 )如下通式所表呈酞酸或酞酸的二酯形式之芳族甲 亞胺化合物
〇 〇 經濟部智慧財產局員工消費合作社印製 其中R 3和R 4基彼此獨立地各表選自下列所成組合中的取代 基：胺基，C ! - C 6烷基取代胺基，羥基，硝基，鹵素原子 ，Ci — C6院基和Ci — C6院氧基；其中R3和R4取代基中 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） -6 - 575793 A8 B8 C8 D8 六、申請專利範圍7 至少有一者爲未經取代胺基或c X所表二價基爲式-C…-或-…H—甲亞胺聯 / C 6烷基取代胺基，且各 結；及 β) —交聯劑，其爲如下通式所袠的二聚氯胺化合物 R5 R5、 Re，
N 經濟部智慧財產局員工消費合作社印製 其中R5和R6所表的六個基各爲氫原子’甲醇基或Cl 一 烷氧甲基，但其限制條件爲六個基中至少有兩個爲甲醇基 或Cl — C6院氧甲基； 其中成份（A )對成份（B )的重量比例係在1 : 1至1 :1 0的範圍內； (C) 2 ，2 / ，4，4 / —四羥基二苯甲酮，其添加量 不超過以成份（A )和（B )總量計算的8 0重量％ ;以 及 (c ) 一光敏性組成物的光阻層，其係在該底塗層的表面 上形成的。 1 1 ·如申請專利範圍第1 0項之光學照像造圖用光 阻材料，其中該底塗層具有在〇·〇5至〇. 3微米範圍 內之厚度。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公楚） (請先閲讀背面之注意事項再填寫本頁)
-7 575793
8 8 8 8 ABCD 六、申請專利範圍8 1 2 .如申請專利範圍第1 0項之光學照像蝕刻造圖 用之光阻材料，其中該光阻層具有0. 5至5微米範圍內 之厚度。 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） -8-
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10592196A JP3436843B2 (ja) | 1996-04-25 | 1996-04-25 | リソグラフィー用下地材及びそれを用いたリソグラフィー用レジスト材料 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW575793B true TW575793B (en) | 2004-02-11 |
Family
ID=14420339
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW86105114A TW575793B (en) | 1996-04-25 | 1997-04-19 | Undercoating composition for photolithographic resist |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US5939510A (zh) |
| EP (1) | EP0803777B1 (zh) |
| JP (1) | JP3436843B2 (zh) |
| KR (1) | KR100266731B1 (zh) |
| DE (1) | DE69702422T2 (zh) |
| TW (1) | TW575793B (zh) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5948847A (en) * | 1996-12-13 | 1999-09-07 | Tokyo Ohka Kogyo Co., Ltd. | Undercoating composition for photolithographic patterning |
| US6682736B1 (en) * | 1998-12-23 | 2004-01-27 | Abgenix, Inc. | Human monoclonal antibodies to CTLA-4 |
| TW476865B (en) * | 1999-01-28 | 2002-02-21 | Tokyo Ohka Kogyo Co Ltd | Undercoating composition for photolithographic resist |
| US6544717B2 (en) | 1999-01-28 | 2003-04-08 | Tokyo Ohka Kogyo Co., Ltd. | Undercoating composition for photolithographic resist |
| US6824879B2 (en) | 1999-06-10 | 2004-11-30 | Honeywell International Inc. | Spin-on-glass anti-reflective coatings for photolithography |
| EP1190277B1 (en) | 1999-06-10 | 2009-10-07 | AlliedSignal Inc. | Semiconductor having spin-on-glass anti-reflective coatings for photolithography |
| US6653411B2 (en) | 2000-04-19 | 2003-11-25 | Brewer Science, Inc. | Anti-reflective coating compositions comprising polymerized aminoplasts |
| US6323310B1 (en) | 2000-04-19 | 2001-11-27 | Brewer Science, Inc. | Anti-reflective coating compositions comprising polymerized aminoplasts |
| NL1015524C2 (nl) * | 2000-06-26 | 2001-12-28 | Otb Group Bv | Werkwijze ter vervaardiging van een substraat om te worden toegepast in een stampervervaardigingsproces, alsmede substraat verkregen volgens een dergelijke werkwijze. |
| KR20090057142A (ko) * | 2000-08-17 | 2009-06-03 | 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 | 내에칭성 반사방지 코팅 조성물 |
| WO2002069336A2 (en) * | 2001-02-27 | 2002-09-06 | Tdk Corporation | Method for producing photoresist master for optical information medium, and method for producing stamper for optical information medium |
| US6593055B2 (en) * | 2001-09-05 | 2003-07-15 | Kodak Polychrome Graphics Llc | Multi-layer thermally imageable element |
| JP2003085829A (ja) * | 2001-09-06 | 2003-03-20 | Tdk Corp | 光情報媒体用スタンパの製造方法およびこれに用いるフォトレジスト原盤、ならびに、光情報媒体用スタンパおよび光情報媒体 |
| TW591341B (en) * | 2001-09-26 | 2004-06-11 | Shipley Co Llc | Coating compositions for use with an overcoated photoresist |
| JP2003140347A (ja) * | 2001-11-02 | 2003-05-14 | Tokyo Ohka Kogyo Co Ltd | 厚膜ホトレジスト層積層体、厚膜レジストパターンの製造方法、および接続端子の製造方法 |
| TWI228718B (en) * | 2001-11-05 | 2005-03-01 | Tdk Corp | Manufacturing method and device of mold plate for information medium |
| AU2002227106A1 (en) | 2001-11-15 | 2003-06-10 | Honeywell International Inc. | Spin-on anti-reflective coatings for photolithography |
| WO2003058613A1 (fr) * | 2001-12-28 | 2003-07-17 | Tdk Corporation | Procede de fabrication d'une matrice de pressage pour support d'informations, matrice de pressage et disque original photosensible |
| TWI258142B (en) * | 2002-01-08 | 2006-07-11 | Tdk Corp | Manufacturing method of stamper for manufacturing data medium, the stamper, and the stamper spacer with template |
| TWI254306B (en) * | 2002-01-08 | 2006-05-01 | Tdk Corp | Manufacturing method of stamper for manufacturing data medium, the stamper, and the photoresist template |
| TWI264717B (en) | 2002-01-08 | 2006-10-21 | Tdk Corp | Manufacturing method of stamper for manufacturing data medium, the stamper, and the photoresist template |
| EP1492093A4 (en) * | 2002-03-11 | 2009-06-03 | Tdk Corp | PROCESSING METHOD FOR A PHOTORESIST MASTER, METHOD FOR MANUFACTURING A RECORDING MEDIUM USER MASTER, METHOD FOR PRODUCING A RECORDING MEDIUM, PHOTORESIST MASTER, RECORDING MEDIA USE MASTER AND RECORDING MEDIUM |
| JP2004013973A (ja) * | 2002-06-05 | 2004-01-15 | Tdk Corp | フォトレジスト原盤の製造方法、光記録媒体製造用スタンパの製造方法、スタンパ、フォトレジスト原盤、スタンパ中間体及び光記録媒体 |
| US7038328B2 (en) * | 2002-10-15 | 2006-05-02 | Brewer Science Inc. | Anti-reflective compositions comprising triazine compounds |
| JP4523258B2 (ja) * | 2003-10-07 | 2010-08-11 | ハッコールケミカル株式会社 | 凸版印刷用感光性積層印刷原版に用いる紫外線吸収剤及びその製造方法 |
| US8053159B2 (en) | 2003-11-18 | 2011-11-08 | Honeywell International Inc. | Antireflective coatings for via fill and photolithography applications and methods of preparation thereof |
| US20050151283A1 (en) * | 2004-01-08 | 2005-07-14 | Bajorek Christopher H. | Method and apparatus for making a stamper for patterning CDs and DVDs |
| US7427466B2 (en) * | 2004-11-29 | 2008-09-23 | Imation Corp. | Anti-reflection optical data storage disk master |
| JP2006154570A (ja) * | 2004-11-30 | 2006-06-15 | Tokyo Ohka Kogyo Co Ltd | レジストパターンおよび導体パターンの製造方法 |
| US8642246B2 (en) | 2007-02-26 | 2014-02-04 | Honeywell International Inc. | Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof |
| US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
| US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
| EP3194502A4 (en) | 2015-04-13 | 2018-05-16 | Honeywell International Inc. | Polysiloxane formulations and coatings for optoelectronic applications |
| US11262656B2 (en) * | 2016-03-31 | 2022-03-01 | Rohm And Haas Electronic Materials Korea Ltd. | Coating compositions for use with an overcoated photoresist |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4197392A (en) | 1978-08-21 | 1980-04-08 | General Electric Company | Melamine coatings |
| SU1052529A1 (ru) * | 1982-02-03 | 1983-11-07 | Киевский Филиал По Специальным Видам Печати Всесоюзного Научно-Исследовательского Института Комплексных Проблем Полиграфии | Лак |
| US4910122A (en) * | 1982-09-30 | 1990-03-20 | Brewer Science, Inc. | Anti-reflective coating |
| JPS60223121A (ja) * | 1984-04-19 | 1985-11-07 | Matsushita Electric Ind Co Ltd | パタ−ン形成方法 |
| DE3736758A1 (de) * | 1987-10-30 | 1989-05-11 | Hoechst Ag | Positiv arbeitendes lichtempfindliches gemisch, enthaltend einen farbstoff, und daraus hergestelltes positiv arbeitendes lichtempfindliches aufzeichnungsmaterial |
| US6165697A (en) * | 1991-11-15 | 2000-12-26 | Shipley Company, L.L.C. | Antihalation compositions |
| US5234990A (en) * | 1992-02-12 | 1993-08-10 | Brewer Science, Inc. | Polymers with intrinsic light-absorbing properties for anti-reflective coating applications in deep ultraviolet microlithography |
| US5294680A (en) * | 1992-07-24 | 1994-03-15 | International Business Machines Corporation | Polymeric dyes for antireflective coatings |
| JP3024694B2 (ja) * | 1993-11-29 | 2000-03-21 | 東京応化工業株式会社 | ポジ型ホトレジスト組成物 |
| JP2953562B2 (ja) * | 1994-07-18 | 1999-09-27 | 東京応化工業株式会社 | リソグラフィー用下地材及びそれを用いた多層レジスト材料 |
| US5498514A (en) * | 1994-08-09 | 1996-03-12 | Tokyo Ohka Kogyo Co., Ltd. | Lithographic double-coated patterning plate with undercoat levelling layer |
| US5652317A (en) * | 1996-08-16 | 1997-07-29 | Hoechst Celanese Corporation | Antireflective coatings for photoresist compositions |
-
1996
- 1996-04-25 JP JP10592196A patent/JP3436843B2/ja not_active Expired - Fee Related
-
1997
- 1997-04-18 EP EP97302658A patent/EP0803777B1/en not_active Expired - Lifetime
- 1997-04-18 DE DE69702422T patent/DE69702422T2/de not_active Expired - Fee Related
- 1997-04-19 TW TW86105114A patent/TW575793B/zh not_active IP Right Cessation
- 1997-04-24 US US08/845,358 patent/US5939510A/en not_active Expired - Lifetime
- 1997-04-24 KR KR1019970015396A patent/KR100266731B1/ko not_active Expired - Fee Related
-
1999
- 1999-03-18 US US09/271,899 patent/US6087068A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE69702422D1 (de) | 2000-08-10 |
| KR100266731B1 (ko) | 2000-09-15 |
| KR970072029A (ko) | 1997-11-07 |
| JPH09292715A (ja) | 1997-11-11 |
| HK1001421A1 (zh) | 1998-06-19 |
| DE69702422T2 (de) | 2000-12-14 |
| US6087068A (en) | 2000-07-11 |
| EP0803777A1 (en) | 1997-10-29 |
| JP3436843B2 (ja) | 2003-08-18 |
| EP0803777B1 (en) | 2000-07-05 |
| US5939510A (en) | 1999-08-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW575793B (en) | Undercoating composition for photolithographic resist | |
| ES2798135T5 (es) | Fotoiniciadores policíclicos | |
| JP5312743B2 (ja) | オキシム化合物及びそれを含む感光性組成物 | |
| CN102093282B (zh) | 肟酯光敏引发剂 | |
| CN1751270B (zh) | 含噁唑衍生物的射线敏感组合物和基于它的可成象元件 | |
| EP2342237B1 (en) | Photoinitiator mixtures | |
| CN101679394B (zh) | 肟酯光引发剂 | |
| CN101095083B (zh) | 可光聚合的组合物 | |
| JPH01165613A (ja) | 重合可能な化合物、その放射線重合性混合物および放射線重合記録材料 | |
| JP6911268B2 (ja) | カルド系バインダー樹脂、これを含む感光性樹脂組成物、ブラックマトリックス、カラーフィルタおよびディスプレイ装置 | |
| CN101687846A (zh) | 肟酯光引发剂 | |
| JP2000314956A5 (zh) | ||
| JP4874659B2 (ja) | アニリン化合物及びその製造方法、並びに、感光性組成物 | |
| WO2018041935A1 (en) | Polycyclic glyoxylates as photoinitiators | |
| JP2004323845A5 (zh) | ||
| US3073699A (en) | Addition polymerizable dye-forming compositions, elements, and processes | |
| JPS59142205A (ja) | 高感度光開始剤組成物 | |
| KR920006340A (ko) | 비 중합성 화합물, 이를 함유하는 조성물 그리고 포지티브 및 네가티브상의 형성방법 | |
| JPH02142779A (ja) | 増感性部分を有するハロメチル―１，３，５―トリアジン | |
| JPS59105643A (ja) | カラ−写真記録材料 | |
| JP4953851B2 (ja) | 感光性組成物 | |
| JPS62277364A (ja) | フエナントロイミダゾ−ル化合物、その製造方法及びこれを使用した光重合性被覆材料乃至記録材料 | |
| EP1108723A1 (en) | Organosilyl radical generators and their applications | |
| JP2005281551A (ja) | 新規な重合性モノマー及びこれを含んでなる感光性組成物及び平版印刷版 | |
| JPS6137276B2 (zh) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |