565486 A7 B7 7 〇95twf. doc/006 五、發明說明（I) 本發明是有關於一種化學機械硏磨（Chemical Mechanical Polishing，CMP )裝置，且特別是有關於一種利 用淸除單元如淸除刷（brush sweeper )淸除由調節器 (conditioner )掉落於硏磨墊上之鑽石微粒（diamond particles )的化學機械硏磨裝置。 在半導體製程技術中，表面平坦化是處理高密度微 影的一項重要技術，因沒有高低落差的平坦表面才能避免 曝光散射，而達成精密的圖案轉移（pattern transfer )。平 坦化技術主要有旋塗式玻璃法（Spin-〇n Glass，SOG )與化 學機械硏磨法等二種，但在半導體製程技術進入毫微米 (sub-half-micron )之後，旋塗式玻璃法已無法滿足其所需 求的平坦度，所以化學機械硏磨技術是現在少數能提供超 大型積體電路（Very-Large Scale Integration，VLSI)，甚至 極大型積體電路（Ultra-Large Scale Integration，ULSI)製程 『全面性平坦化（global planarization )』的一種技術。而化 學機械硏磨主要是利用硏漿中的化學助劑（reagent )，在晶 圓的正面上產生化學反應，使之形成一易硏磨層，再配合 晶圓在硏磨墊上藉由硏漿中之硏磨粒（abrasive particles )輔 助之機械硏磨，將易硏磨層之凸出部份硏磨，反覆上述化 學反應與機械硏磨，即可形成平坦的表面。基本上，化學 機械硏磨技術是利用機械拋光的原理，配合適當的化學助 劑與硏磨粒，將表面高低起伏不一的輪廓，一倂加以“拋 光”的平坦化技術。 請參照第1A圖與第1B圖，其分別繪示爲習知一種 --------------------訂-------I IAWI (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張&度適用中國國家標準（CNS)A4規格⑵〇x 297公釐） 565486 A7 B7 7〇95twf.doc/006 五、發明說明（Ί) 同時進行式（in-sUu)化學機械硏磨裝置的俯視示意圖與剖面 示意圖。化學機械硏磨裝置100主要可分爲同時進行式 (in-situ)與非同時進行式（ex-situ)兩種。其中，同時進行式 化學機械硏磨裝置主要包括一硏磨台101( polishing table )、一晶圓承載器 102( wafer carrier )、一硏磨墊 104( polishing pad )、一管件 106( tube )、一液栗 108，以 及一調節器110。其中，晶圓承載器102係用以抓住被硏 磨的晶圓112,硏磨墊104係配置在硏磨台101上，管件106 係用以輸送硏漿114( slinry )至硏磨墊104上，液泵108係 用以將硏漿114抽送到管件106中，而調節器110上鑲有 鑽石，係用以維持硏磨墊104表面粗糙度與淸除雜質。 同時進行式化學機械硏磨裝置100在晶圓Π2被硏磨 的同時，調節器110會讓硏磨墊104維持在適當的粗糙度 (roughness )，使得硏磨墊104可以吸附足夠的矾漿114， 進而維持較高、較穩定的硏磨速率（polishing rate )，且具 有去除硏磨墊104上雜質的功能。 而非同時進行式化學機械硏磨裝置的結構與同時進 行式化學機械硏磨裝置的結構相似，其差異之處在於同時 進行式化學機械硏磨裝置中的調節器Π〇會在晶圓H2被 硏磨的同時維持硏磨墊104的粗糖度’而非同時進行式化 學機械硏磨裝置中的調節器則是在晶圓112硏磨完成離開 硏磨墊104之後，才進行硏磨墊104粗糙度維持及雜質去 除的工作。 習知不論是同時進行式或非同時進行式化學機械硏 4 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 f • ϋ ϋ n ϋ ϋ n ϋ I n ϋ ϋ n ·1 I I it n n n ϋ ϋ ·ϋ 1 I ϋ ϋ ϋ I I n I . 本紙張尺度適用中國國家標準（CNS)A.l規格（2〗〇χ 297公釐） 565486 A7 B7 7〇95twf.doc/006 五、發明說明（>) 磨裝置在以調節器維持硏磨墊粗糙度時，常會造成調節器 上鑽石微粒脫落於硏磨墊上，這些脫落的鑽石微粒常會造 成被硏磨晶圓出現刮傷（scratch )的問題。 習知鑽石微粒脫落的問題主要是與硏磨時硏漿本身 的腐触丨生（corrosive nature )及機械力（mechanical force )有 關。因此，本發明的目的在提出一種化學機械硏磨裝置， 利用淸除單元如淸除刷淸除由調節器掉落於硏磨墊上之鑽 石微粒。 爲達本發明之上述目的，提出一種化學機械硏磨裝 置主要由一硏磨台、一晶圓承載器、一硏磨墊、一硏费供 應裝置、一調節器以及一淸除單元所組成。針對同時進行 式化學機械硏磨裝置而言，晶圓承載器、調節器、淸除單 元以及硏漿供應裝置係沿著硏磨台旋轉的方向依序配置於 硏磨墊上方的適當位置，使得硏磨晶片的硏磨墊區域可經 過調節器處理，再經過一淸除單元如淸除刷淸除其上因意 外而脫落之鑽石微粒，最後承接硏漿繼續對晶圓進行硏 磨，可以有效的避免晶圓被刮傷的問題。而針對非同時進 行式化學機械硏磨裝置而言，晶圓承載器、調節器、淸除 單元以及硏漿供應裝置的配置，因其作業程序的關係並沒 有限制，其中所使用的淸除單元亦可發揮避免晶圓被刮傷 的效用。本發明中所使用之淸除單元可以爲各種不同之型 態如圓形、滾筒型淸除刷等，以能夠淸除硏磨墊上脫落之 鑽石微粒爲原則。 爲讓本發明之上述目的、特徵、和優點能更明顯易 5 本紙張尺度適用中國國家標準（CNS)A4規格（2.10 x 297公釐） -------------— t (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 訂----- ----λ—·.----------------------- 經濟部智慧財產局員工消費合作社印製 565486 五、發明說明（十） 懂，下文特舉一較佳實施例，並配合所附圖式，作詳細說 明如下： 圖式之簡單說明： 第1A圖繪示爲習知一種同時進行式化學機械硏磨裝 置的俯視示意圖； 第1B圖繪示爲習知一種同時進行式化學機械硏磨裝 置的剖面示意圖； 第2圖繪示爲依照本發明一較佳實施例同時進行式化 學機械硏磨裝置的示意圖； 第3A圖與第3B圖繪示爲依照本發明一較佳實施例 非同時進行式化學機械硏磨裝置的示意圖；以及 第4圖繪示爲依照本發明一較佳實施例化學機械硏磨 裝置的示意圖。 圖式之標示說明： 100、 200 :化學機械硏磨裝置 101、 201 :硏磨台 102、 202 :晶圓承載器 104、204 :硏磨墊 106、206 :管件 108、208 :液泵 110、210 ··調節器 112、212 :晶圓 114 :硏漿 205 :硏槳供應裝置 6 (請先閱讀背面之注意事項再填寫本頁) n I n ϋ ϋ n I ·ϋ ϋ_· ϋ an ϋ ϋ ϋ —i I ϋ ϋ I ·ϋ ϋ ϋ ϋ I ϋ ϋ 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） 經濟部智慧財產局員工消費合作社印製 565486 五、發明說明（$ ) 216 :淸除單元 218 :第一方向 220 :第二方向 222 ··第三方向 I :硏漿注入區域 齩佳實施例 首先請參照第2圖，其繪示爲依照本發明一較佳實施 例同時進行式化學機械硏磨裝置的示意圖。本發明之同時 進行式化學機械硏磨裝置主要由一硏磨台201、一晶圓承 載器202、一硏磨墊204、一硏漿供應裝置205、一調節器 210，以及一淸除單元216所組成。其中，晶圓承載器202 係用以抓住被硏磨的晶圓212，以使晶圓212與硏磨墊204 接觸。硏磨墊204係配置在硏磨台201上方，所使用的硏 磨墊204例如爲聚亞胺酯材質之1C 1000。調節器210例如 爲鑽石磨具（diamond dresser )，其與硏磨墊204接觸部分 配置有很多鑽石微粒，用以維持硏磨墊204表面之粗糙度 並可將硏磨墊204表面之雜質淸除。而硏漿供應系統205 例如由一管件206與一液泵208所組成，管件206係用以 輸送硏漿至硏磨墊204上，液泵208係用以將硏漿抽送到 管件206中。淸除單元216例如爲圓形淸除刷或滾筒型淸 除刷’其主要功能在於淸除由調節器210上所脫落之鑽石 微粒’避免晶圓212被刮傷。 在進行化學機械硏磨時，晶圓承載器202抓住晶圓212 的背面，將晶圓212的正面壓在硏磨墊204上，以同時進 7 本紙張K度適用中國國豕標準（CNS)A4規格（21〇 X 297公爱） (請先閱讀背面之注意事項再填寫本頁) - 1 1 n n UBi ϋ I I 1 n t —Bi ϋ n I an ^^1 ϋ ϋ— i^i in ϋ 1· I i^i ϋ ϋ n i^i n (i ϋ I 1^1 ^ 565486 五、發明說明（έ) (請先閱讀背面之注意事項再填寫本頁) 行式化學機械硏磨裝置200而言，晶圓承載器202、調節 器210以及淸除單元216例如沿著第一方向218依序配置 於硏磨墊2〇4上方之適當位置。使得硏磨過晶圓212的硏 磨墊204區域可以藉由調節器210的調節而維持在適當的 粗糙度，使得硏磨墊204可以吸附足夠的硏漿’進而維持 較高、較穩定的硏磨速率，且具有去除硏磨墊204表面雜 質的功能。之後再以淸除單元216淸除由調節器210上意 外脫落之鑽石微粒，經過淸除單元216淸除之後的硏磨墊 204區域即可再對晶圓212進行硏磨。此外，淸除單元216 例如爲圓形刷頭，其旋轉方向例如以第二方向220旋轉， 相同於硏磨台201之第一方向218。而在淸除單元216與 晶圓承載器202之間的區域爲硏漿注入的區域I，利用管 件206將液泵208所打進來的硏漿在此硏漿注入的區域I 上持續不斷地供應到硏磨墊204上。 經濟部智慧財產局員工消費合作社印製 接著請參照第3A圖與第3B圖，其繪示爲依照本發 明一較佳實施例非同時進行式化學機械硏磨裝置的示意 圖。本發明之非同時進行式化學機械硏磨裝置同樣由一硏 磨台201、一晶圓承載器202、一硏磨墊204、一硏漿供應 裝置205、一調節器210，以及一淸除單元216所組成。請 參照第3A圖，晶圓承載器202、調節器210以及淸除單元 216係配置於硏磨墊204上方之適當位置，但並不限定其 配置之次序與彼此之間的相對位置。以非同時進行式化學 機械硏磨裝置200而言，在進行化學機械硏磨時，晶圓承 載器202抓住晶圓212的背面，將晶圓212的正面壓在硏 8 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 565486 A7 B7 7〇95twf.d〇c/006 五、發明說明（q) 磨墊204上硏磨，之後將晶圓212移出硏磨墊204外。 接著請參照第3B圖，藉由調節器210的調節硏磨墊 204使其維持在適當的粗糙度’故使得硏磨墊204可以吸 附足夠的硏獎，進而維持較高、較穩定的硏磨速率，且具 有去除硏磨墊204表面雜質的功能。在調節器210淸除硏 磨墊204上雜質的同時，以淸除單元216淸除由調節器210 上意外脫落之鑽石微粒’經過淸除單元216淸除之後的硏 磨墊204區域即可再對晶圓212進行硏磨。同樣地，淸除 單元216例如爲圓形淸除刷頭，其旋轉方向例如以第二方 向220旋轉，相同於硏磨台201之第一方向218。但對非 同時進行式化學機械硏磨裝置200而言，硏漿注入的區域 並沒有嚴格的限制。 最後請參照第4圖，其繪示爲依照本發明一較佳實施 例化學機械硏磨裝置的示意圖。値得一提的是，本發明上 述所使用之淸除單元216並不限定於圓形淸除刷頭，且其 旋轉方式亦可有所變化，本發明之淸除單元216亦可爲一 滾筒型刷頭，以一特定角度配置於硏磨墊上方之適當位 置，同樣可藉由滾筒型之淸除單元216將由調節器210脫 落之鑽石微粒沿著第三方向222掃出硏磨墊204外。 綜上所述，本發明之化學機械硏磨裝置至少具有下 列優點： 1·本發明之化學機械硏磨裝置中以淸除單元預防進行 化學機械硏磨製程時，鑽石微粒對晶圓的刮傷。 2.本發明之化學機械硏磨裝置中使用的淸除單元，其 9 本紙張尺度適用中國國家標準（CNS)A‘4規格（2丨〇 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 一-0、.· I ϋ ϋ n I ϋ ϋ I ϋ ϋ n ϋ n I .^1 ϋ ϋ I ϋ ϋ — ϋ I I n n n ϋ ϋ I · 565486 7〇95twf.doc/006 A7 B7 五、發明說明（g ) 主要目的在於將由調節器脫落之鑽石微粒掃出硏磨墊之 外，故其可使用的淸除單元類型很廣、且容易取得。 3.本發明之化學機械硏磨裝置，可與目前之化學機械 硏磨裝置相容，不需對現線有機台作大幅度的修改，即可 避免鑽石微粒對晶圓的刮傷問題。 雖然本發明已以一較佳實施例揭露如上，然其並非 用以限定本發明，任何熟習此技藝者，在不脫離本發明之 精神和範圍內，當可作各種之更動與潤飾，因此本發明之 保護範圍當視後附之申請專利範圍所界定者爲準。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 10 _ fl·— iai ·ϋ n ϋ 1« β ϋ n ϋ ^1 ·ϋ ϋ I 線---------------------- 本紙張尺度適用中國國家標準（CNS)A‘l規格（210x297公釐）565486 A7 B7 7 〇95twf. Doc / 006 V. Description of the invention (I) The present invention relates to a chemical mechanical polishing (CMP) device, and in particular to a method using a cleaning unit such as a cleaning brush (Brush sweeper) A chemical mechanical honing device for removing diamond particles dropped from a conditioner on a honing pad. In semiconductor manufacturing technology, surface planarization is an important technique for processing high-density lithography. Because there is no flat surface with high and low dropouts, exposure scattering can be avoided, and precise pattern transfer can be achieved. There are two types of planarization technologies, such as spin-on glass (SOG) and chemical mechanical honing. However, after the semiconductor process technology enters the sub-half-micron, spin-on glass The method can no longer meet the required flatness, so chemical mechanical honing technology is one of the few that can provide very large integrated circuits (VLSI), or even very large integrated circuits (Ultra-Large Scale Integration, ULSI) is a technology for "global planarization". The chemical mechanical honing mainly uses the chemical agent (reagent) in the honing slurry to generate a chemical reaction on the front surface of the wafer to form an easy honing layer, and then cooperates with the wafer on the honing pad to use the honing slurry. The mechanical honing assisted by the abrasive particles in the medium, honing the protruding part of the easy honing layer, and repeating the above-mentioned chemical reaction and mechanical honing can form a flat surface. Basically, the chemical mechanical honing technology is a flattening technology that uses the principle of mechanical polishing, with appropriate chemical aids and honing particles, to undulate the contours of the surface. Please refer to Fig. 1A and Fig. 1B, which are shown as a kind of acquaintance -------------------- Order ------- I IAWI (Please (Please read the notes on the back before filling in this page) The paper printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs & printed on the paper is applicable to the Chinese National Standard (CNS) A4 Specification ⑵〇x 297 mm) / 006 V. Description of the invention (i) Simultaneous plan view and cross-sectional view of an in-sUu chemical mechanical honing device. The chemical mechanical honing apparatus 100 can be mainly classified into two types: in-situ and ex-situ. Among them, the simultaneous chemical mechanical honing device mainly includes a honing table 101 (polishing table), a wafer carrier 102 (wafer carrier), a polishing pad 104 (polishing pad), a tube 106 (tube), A liquid chestnut 108, and a regulator 110. Among them, the wafer carrier 102 is used to hold the honing wafer 112, the honing pad 104 is arranged on the honing table 101, and the pipe 106 is used to convey the slinry 114 (slinry) to the honing pad 104 In the above, the liquid pump 108 is used to pump the slurry 114 into the pipe 106, and the regulator 110 is set with diamonds to maintain the surface roughness of the honing pad 104 and remove impurities. In the simultaneous chemical mechanical honing apparatus 100, while the wafer Π2 is honing, the adjuster 110 will maintain the honing pad 104 at a proper roughness, so that the honing pad 104 can absorb enough alum slurry 114 Therefore, it maintains a higher and more stable honing rate (polishing rate), and has the function of removing impurities on the honing pad 104. The structure of the non-simultaneous chemical mechanical honing device is similar to that of the simultaneous chemical mechanical honing device. The difference is that the regulator Π0 in the simultaneous chemical mechanical honing device will be processed on the wafer H2. While maintaining the coarse sugar content of the honing pad 104 while honing, instead of the regulator in the simultaneous chemical mechanical honing device, the honing pad 104 is roughened after the wafer 112 honing is completed and leaves the honing pad 104. Maintenance and removal of impurities. Whether it is simultaneous or non-simultaneous chemical machinery 硏 4 (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs f • ϋ ϋ n ϋ ϋ n ϋ I n ϋ · n · 1 II it nnn ϋ ϋ · ϋ 1 I ϋ ϋ ϋ II n I. This paper size is applicable to China National Standard (CNS) Al specification (2〗 〇297 × 297mm) 565486 A7 B7 7〇95twf.doc 5. Description of the invention (>) When the grinding device maintains the roughness of the honing pad by the regulator, the diamond particles on the regulator often fall off the honing pad. These dropped diamond particles often cause the honing wafer to appear. The problem of scratch. It is known that the problem of diamond particle shedding is mainly related to the corrosive nature and mechanical force of the mortar itself during honing. Therefore, the object of the present invention is to propose a chemical mechanical honing device, which uses a scouring unit such as a scouring brush to remove diamond particles dropped on the honing pad by the regulator. In order to achieve the above object of the present invention, a chemical mechanical honing device is proposed, which is mainly composed of a honing table, a wafer carrier, a honing pad, a honing supply device, a regulator, and an erasing unit. For a simultaneous chemical mechanical honing device, the wafer carrier, adjuster, honing unit and honing slurry supply device are sequentially arranged at appropriate positions above the honing pad along the direction of the honing table rotation, so that The honing pad area of the honing wafer can be processed by an adjuster, and then passed through an erasing unit such as an erasing brush to remove diamond particles that have fallen off by accident. Finally, the honing slurry can be continued to honing the wafer, which can effectively Avoid the problem of scratched wafers. For non-simultaneous chemical mechanical honing equipment, there are no restrictions on the configuration of the wafer carrier, regulator, erasing unit, and slurry supply device, and the erasing unit used therein is not limited. It also has the effect of preventing the wafer from being scratched. The erasing unit used in the present invention can be of various types such as circular, roller-type erasing brushes, etc. The principle is to be able to eliminate diamond particles falling off the honing pad. In order to make the above-mentioned objects, features, and advantages of the present invention more obvious and easy 5 this paper size applies the Chinese National Standard (CNS) A4 specification (2.10 x 297 mm) -------------- t (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ----- ---- λ- · .------------- ---------- Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs's Consumer Cooperatives 565486 V. Description of the Invention (10) Understand, a preferred embodiment will be given below, and it will be described in detail with the accompanying drawings. : Brief description of the drawings: FIG. 1A is a schematic top view of a conventional simultaneous chemical mechanical honing device; FIG. 1B is a schematic cross-sectional view of a conventional simultaneous mechanical mechanical honing device; Figure 2 shows a schematic diagram of a simultaneous chemical mechanical honing apparatus according to a preferred embodiment of the present invention; Figures 3A and 3B show non-simultaneous chemical mechanical honing according to a preferred embodiment of the present invention A schematic view of the device; and FIG. 4 shows a chemical mechanical honing device according to a preferred embodiment of the present invention FIG. Description of the drawings: 100, 200: chemical mechanical honing device 101, 201: honing table 102, 202: wafer carrier 104, 204: honing pad 106, 206: pipe 108, 208: liquid pump 110, 210 ·· Regulators 112, 212: Wafer 114: Slurry 205: Paddle supply device 6 (Please read the precautions on the back before filling out this page) n I n ϋ ϋ n I · ϋ ϋ_ · ϋ an ϋ ϋ ϋ ϋ —i I ϋ ϋ I · ϋ ϋ ϋ ϋ I ϋ ϋ This paper size applies to China National Standard (CNS) A4 (210 x 297 mm) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 565486 $) 216: erasing unit 218: first direction 220: second direction 222 ... third direction I: slurry injection area. Best Embodiment First, please refer to FIG. 2, which is shown as a preferred method according to the present invention. Example A schematic view of a simultaneous chemical mechanical honing device. The simultaneous chemical mechanical honing device of the present invention is mainly composed of a honing table 201, a wafer carrier 202, a honing pad 204, a slurry supply device 205, a regulator 210, and a honing unit 216. Composed of. The wafer carrier 202 is used to hold the honed wafer 212 so that the wafer 212 is in contact with the honing pad 204. The honing pad 204 is disposed above the honing table 201. The honing pad 204 used is, for example, 1C 1000 made of polyurethane. The adjuster 210 is, for example, a diamond dresser. A portion of the diamond dresser 204 in contact with the honing pad 204 is provided with a plurality of diamond particles to maintain the roughness of the surface of the honing pad 204 and remove impurities from the surface of the honing pad 204. . The slurry supply system 205 is, for example, composed of a tube 206 and a liquid pump 208. The tube 206 is used to convey the slurry to the honing pad 204, and the liquid pump 208 is used to pump the slurry to the tube 206. The erasing unit 216 is, for example, a circular erasing brush or a roller-type erasing brush. Its main function is to erase diamond particles peeled off from the regulator 210 to prevent the wafer 212 from being scratched. When performing chemical mechanical honing, the wafer carrier 202 grasps the back of the wafer 212 and presses the front side of the wafer 212 on the honing pad 204 to feed 7 sheets of paper at the same time. K National Standard (CNS) ) A4 specification (21〇X 297 public love) (Please read the notes on the back before filling this page)-1 1 nn UBi ϋ II 1 nt —Bi ϋ n I an ^^ 1 ϋ i — i ^ i in ϋ 1 · I i ^ i ϋ ϋ ni ^ in (i ϋ I 1 ^ 1 ^ 565486 V. Description of the invention (έ) (Please read the precautions on the back before filling this page) Line chemical mechanical honing device 200 The wafer carrier 202, the adjuster 210, and the erasing unit 216 are sequentially arranged at appropriate positions above the honing pad 204 along the first direction 218, for example, so that the area of the honing pad 204 that hones the wafer 212 It can be maintained at an appropriate roughness by the adjustment of the adjuster 210, so that the honing pad 204 can absorb sufficient honing slurry, thereby maintaining a high and stable honing rate, and having the ability to remove impurities on the surface of the honing pad 204 Function. After that, the diamond particles accidentally detached from the regulator 210 are removed by the erasing unit 216, and then passed through the erasing unit 216. The wafer 212 can be honed again after being removed from the area of the honing pad 204. In addition, the honing unit 216 is, for example, a circular brush head, and its rotation direction is, for example, the second direction 220, which is the same as that of the honing table 201. First direction 218. The area between the erasing unit 216 and the wafer carrier 202 is the area I where the slurry is injected, and the tube 206 is used to drive the slurry which is pumped in by the liquid pump 208 into the area I where the slurry is injected. It is continuously supplied to the honing pad 204. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Please refer to FIG. 3A and FIG. 3B, which are shown as non-simultaneous chemistry according to a preferred embodiment of the present invention. Schematic diagram of a mechanical honing device. The non-synchronous chemical mechanical honing device of the present invention is also composed of a honing table 201, a wafer carrier 202, a honing pad 204, a honing slurry supply device 205, and a regulator. 210 and an erasing unit 216. Please refer to FIG. 3A. The wafer carrier 202, the adjuster 210, and the erasing unit 216 are disposed at appropriate positions above the honing pad 204, but the configuration is not limited. Order relative to each other In the case of the non-simultaneous chemical mechanical honing apparatus 200, during the chemical mechanical honing, the wafer carrier 202 grasps the back surface of the wafer 212 and presses the front surface of the wafer 212 to a size of 尺度 8 paper. Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 565486 A7 B7 7095twf.doc / 006 V. Description of the invention (q) Honing on the polishing pad 204, and then moving the wafer 212 out of the honing Pad 204 outside. Next, please refer to FIG. 3B, the honing pad 204 is adjusted to maintain a proper roughness by the adjuster 210, so that the honing pad 204 can absorb sufficient praise, thereby maintaining a higher and more stable honing. Rate, and has the function of removing impurities on the surface of the honing pad 204. While the regulator 210 removes the impurities on the honing pad 204, the erasing unit 216 removes the diamond particles that accidentally fall off from the regulator 210. The area of the honing pad 204 after being removed by the erasing unit 216 can be used again. The wafer 212 is honed. Similarly, the erasing unit 216 is, for example, a circular erasing brush head, and its rotation direction is, for example, rotated in the second direction 220, which is the same as the first direction 218 of the honing table 201. However, for the non-simultaneous chemical mechanical honing device 200, the area where the slurry is injected is not strictly limited. Finally, please refer to FIG. 4, which is a schematic diagram of a chemical mechanical honing apparatus according to a preferred embodiment of the present invention. It should be mentioned that the erasing unit 216 used in the present invention is not limited to a circular erasing brush head, and its rotation method may be changed. The erasing unit 216 of the present invention may also be a roller. The brush head is arranged at an appropriate position above the honing pad at a specific angle, and the diamond particles peeled off by the adjuster 210 can be swept out of the honing pad 204 in the third direction 222 by the roller type erasing unit 216. . In summary, the chemical mechanical honing device of the present invention has at least the following advantages: 1. The chemical mechanical honing device of the present invention uses an erasing unit to prevent the diamond particles from scratching the wafer during the chemical mechanical honing process. . 2. The erasing unit used in the chemical mechanical honing device of the present invention, its 9 paper sizes are applicable to the Chinese National Standard (CNS) A'4 specification (2 丨 〇X 297 mm) (Please read the precautions on the back first (Fill in this page again.) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. I-0, .. I · 565486 7〇95twf.doc / 006 A7 B7 V. Description of the invention (g) The main purpose is to sweep the diamond particles peeled off by the regulator out of the honing pad, so the type of the eradication unit that can be used is very wide and easy Get. 3. The chemical mechanical honing device of the present invention is compatible with the current chemical mechanical honing device, and it is possible to avoid the problem of scratching the wafer by diamond particles without requiring substantial modification of the existing machine. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and decorations without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be determined by the scope of the attached patent application. (Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 10 _ fl · — iai · ϋ n ϋ 1 «β ϋ n ϋ ^ 1 · ϋ ϋ I Line ---- ------------------ This paper size is applicable to China National Standard (CNS) A'l size (210x297 mm)