TW548717B - Method and mask for manufacturing array substrate - Google Patents

Abstract

The present invention provides a kind of method for manufacturing array substrate, in which the design of TFT manufacturing steps is not confined and no additional step is attached such that it is capable of forming the active layers of plural TFTs having constant performance and high carrier mobility. The mask used in the invented method of manufacturing array substrate is provided with the followings. The through region 310 passes through the energy source lines that transmutes amorphous material into poly crystal material, and has long-side direction line 330 and long-side direction line 335 extending roughly parallel to each other. On the respective one end of the long-side direction line toward the long side direction line opposite to each other, the inclined direction 340 and the inclined direction line 345, which have a length shorter than the long side direction line, are connected respectively by conducting a refractive method with an angle larger than 90 DEG. On the respective other end of the long-side direction line toward the long side direction line opposite to each other, the inclined direction 350 and the inclined direction line 355, which have a length shorter than the long side direction line, are connected respectively by conducting a refractive method with an angle larger than 90 DEG, in which the mask is enclosed. And, the blocking region 320 is disposed to block the energy source lines at the periphery of the through region.

Description

548717 A7 ____ B7_____ 5. Description of the invention (') [Technical field to which the invention belongs] The present invention relates to a method for manufacturing an array substrate and a photomask. [Knowledge technology] In recent years, liquid crystal display elements (hereinafter referred to as LCD) have been widely used in personal computers, projection televisions, small televisions, and mobile information terminals. In the current LCD, a dynamic matrix type LCD in which a thin film transistor (hereinafter also referred to as a TFT (Thin Film Transistor)) in which a semiconductor element is mounted on each element is the mainstream. The dynamic matrix type LCD has a structure in which a liquid crystal is sealed between an array substrate having a display electrode and a filter substrate having a common electrode opposed to the display substrate. Array substrates are TFT array substrates in which TFTs are frequently used to form a matrix. The TFT array substrate has a plurality of signal lines connected to the source of the TFT and a plurality of scan lines separated from the TFT gate to form a grid. The active layer of the TFT is made of amorphous silicon or polysilicon. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economics The semiconductor material is made of polycrystalline silicon with a mobility greater than that of amorphous silicon, so as to form a part of a driving circuit for displaying images on an array substrate. Accordingly, it is not necessary to know the parts attached to the unit panel, which can reduce the manufacturing cost and also reduce the size of the LCD display frame. [Problems to be Solved by the Invention] By making more driving circuits on the array substrate, the cost can be reduced and the function can be made high. This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) -4-548717 A7 B7 V. Description of the invention (2) However, it can be used in the driving circuit of the array substrate of polycrystalline silicon which is currently practical as a semiconductor material The number is very limited. Therefore, other circuits mounted on the array substrate are still added to the array substrate. In order to make more driving circuits on the array substrate, it is better to improve the mobility of the polysilicon. In order to improve the mobility of polycrystalline silicon, it is considered to increase the particle size of the crystal grains of polycrystalline sand. Means for increasing the particle size of the crystalline particles of polycrystalline silicon include irradiating an energy line such as laser light on an amorphous silicon film to generate a solid / liquid interface, and using the temperature gradient of the interface to make the crystal parallel to the array substrate Method of growth. This method can also be referred to as the lateral growth method. The lateral growth method, for example, irradiates an energy line such as laser light to an initial film on a substrate through a photomask. At this time, the direction of crystal growth depends on the shape of the energy lines formed by the mask. Printed by the Intellectual Property of the Ministry of Economic Affairs and the Consumer Cooperatives. Figure 7 (A) is an enlarged view of the conventional photomask 100. The photomask 100 is composed of a transparent region 10 and a blocking region 20. The amorphous silicon (or polycrystalline silicon) is melted through the energy line of the opening portion 10. When the irradiation of the energy line is completed, crystals grow from the solid-liquid interface (hereinafter also referred to as the solid-liquid interface) of silicon toward the inside. FIG. 7 (B) is an enlarged plan view of crystal grains of polycrystalline silicon after irradiating an energy line. In the lateral growth method, since the crystal is grown from the solid-liquid interface, the direction in which the crystal is grown in the oblique direction of the transmission region 10 is different from the direction of the long side line. Therefore, the junction crystal grains 30 grown from the oblique direction line of the transmission region 10 are different from the crystal grain 40-based long side direction grown from the long direction line. In particular, 'Because the conventional transmission area 10 is rectangular, the crystal grain 30 and the paper size apply the Chinese National Standard (CNS) A4 specification (210X297 mm) -5- 548717 A7 B7 3 5. Description of the invention (grain 40 The long side square image crosses at an angle near 90 °. Please read the 5th item before filling in Figure 8. The conventional polycrystalline silicon is used as the active layer 50. The mode display shows the layout plan when TFTs 60'70, 80, and 90 are formed. The TFTs 60, 70, 80, and 90 are provided with a gate 110, a source 120, and a drain 130, respectively. The TFT is turned on by applying a voltage to the gate 1 10. That is, the TFTs located at the gate 1 1 0 The active layer is inverted to form a channel. With this channel, a current can flow between the source 120 and the drain 130. When the TFTs 60, 70, 80, and 90 are turned off, between the source 120 and the drain 130 It is preferable that the leakage current is small. In addition, when the TFTs 60, 70, 80, and 90 are turned on, the resistance 値 between the source 120 and the drain 130 (hereinafter referred to as ON resistance) is preferably low. Also, it is desirable TFTs 60, 70, 80, and 90 have fixed performance. Generally, TFT carrier flows When the direction substantially coincides with the long side direction of the polycrystalline silicon crystal grain, the carrier mobility becomes higher. When the carrier mobility becomes higher, the on-resistance becomes lower. In addition, the carrier flow direction is relative to the long side direction of the crystal grain. The closer it is to 90 degrees, the lower the carrier mobility. The number of grain fields that carriers pass through increases, and the number of scattered carriers increases. This is the case of conventional polycrystalline silicon printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The active layer 50 orthogonally crosses each of the crystal grains 30 and 40 in the longitudinal direction of the crystal grains 30 and 90 through the transmission area 10 of the photomask 100. Thus, the TFTs 60, 70, and 80 formed on the active layer 50 In 90 and 90, although the carrier mobility of TFT60, 70, and 80 is relatively high, the carrier mobility of TFT90 is low. In addition, TFT60, 70, 80, and 90 cannot be fixed. This paper The dimensions are applicable to Chinese National Standard (CNS) A4 specifications (210X297 mm) -6-548717 A7 B7 4 V. Description of the invention (Please read the precautions on the back before filling out this page. To avoid the above problems, the so-called crystal grains exist. 3 0 The design limitation of the TFT cannot be formed in the region. In order to avoid the formation of the TFT in the region where the crystal grains 30 are present, another problem that a step aligned with the manufacturing step must be added is generated. Therefore, the object of the present invention is to provide The design of the manufacturing steps of the TFT is limited, and no additional steps are required, and a photomask for forming an active layer of a plurality of TFTs with high carrier mobility and fixed performance can be formed. Another object of the present invention is to provide a method for manufacturing an array substrate of a TFT which does not require a limitation on the manufacturing steps of TFTs and does not require additional steps, has a high carrier mobility, and has a fixed performance. [Solution to Solve the Problem] The manufacturing method of an array substrate according to an embodiment of the present invention is characterized by the following steps: a step of depositing an amorphous material on a transparent substrate; and a print deterioration by an employee consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Step, this metamorphic step uses a mask having the following areas: the transmission area is a first long-side direction line and a second long-side direction line that extend substantially parallel to each other; the first long-side direction line and the second The first oblique direction line and the second oblique line are connected at one end of the long-side direction line toward the first long-side direction line and the second long-side direction line are opposite to each other with a large-angle refraction greater than 90 degrees. Direction line; and on the other ends of the first long-side direction line and the second long-side direction line, respectively, toward the first long-side direction line and the second long-side direction line opposite to each other, by more than 90 degrees The method of large-angle refraction is based on the paper size applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 548717 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 V. Description of the invention (5) The third oblique direction line and the fourth oblique direction line are enclosed to allow the energy line to pass through; and a blocking area is used to block the energy line around the transmission area, and the first and second lines are The length of the transmission region in the direction in which the long-side direction line extends is longer than the length of the transmission region in the direction perpendicular to the direction in which the long-side direction line of the brother 1 and brother 2 extends, and the amorphous material is irradiated with the energy line. For the metamorphic material, the metamorphic step has the following steps: The moving step is when the source line of the amorphous material P,?, And the beam is passed through the transmission area and is projected on the amorphous material. The long side direction of the flat pattern on the surface of the sand material is opposite to the vertical direction, and the transparent substrate is moved at regular intervals; and the irradiation step is to irradiate the energy line to the amorphous material at each of the moving steps. The most desirable is that the first inclined direction line and the second inclined direction line are shorter than the first long side direction line and the second long side direction line, and the third inclined direction line and the fourth inclined direction line are also short. On the first long-side direction line and the second long-side direction line. The most desirable is that the length of the first long-side direction line and the second long-side direction line are approximately equal. It is most desirable that the transmission region has a symmetrical shape with the center line of the first long-side direction line and the second long-side direction line as a boundary. Most preferably, the first oblique direction line, the second oblique direction line, the third oblique direction line, and the fourth oblique direction line are all straight lines. The transmission region may be configured in a hexagonal manner. This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) ----- -8-(Please read the precautions on the back before filling this page)

548717 A7 ----------- — ____B7 _ 5. Description of the invention (vr ~ ~ one by one '〇 The first tilt direction line, the second tilt direction line, the third tilt direction line, and the above Any of the fourth oblique direction lines may be formed in an arc shape or a refracted shape at an angle of 90 degrees or more. The method for manufacturing an array substrate according to the embodiment of the present invention is characterized by having the following steps: a transparent substrate A step of depositing an amorphous material; and a step of modifying, using a photomask transmitted by a modified energy line of a polycrystalline material composed of amorphous material with crystal grains, the photomask has the following regions: When the radiation passes through the energy source and irradiates the amorphous material, the growth of the individual crystal grains is formed in a direction that does not go straight to each other to form an elongated shape; and a blocking area is in the transmitting area. In the surroundings, it is used to cut off the energy line to modify the amorphous material into the polycrystalline material as described above. The step of deterioration includes the following steps: The moving step is the above When the source line is irradiated on the amorphous material through the transmission area, it moves at a fixed interval in the direction perpendicular to the long side of the plane projected on the surface of the amorphous material. The printed board and the irradiation step, in which the energy line is irradiated to the amorphous material in each of the moving steps. Ideally, in the irradiation step, the individual crystal grains grow when the energy line is irradiated. The photomasks according to the embodiment of the present invention are transparent to an energy line that is radiated from an energy line to transform an amorphous material into a polycrystalline material, and is characterized by having the following areas: This paper The scale applies to the Chinese National Standard (CNS) A4 specification (210X 297 mm) -9- 548717 A7 B7 V. Description of the invention (7) The transmission area is the first long-side direction line and the second length that extend approximately parallel to each other. Side direction lines; at one end of the first long side direction line and the second long side direction line, respectively, toward the first long side direction line and the second long side direction line Are the opposite directions, the first oblique direction line and the second oblique direction line that are respectively connected with a large-angle refraction greater than 90 degrees; and by the other in the first long-side direction line and the second long-side direction line, respectively On one end, the third oblique direction line and the fourth oblique direction line connected to the first long-side direction line and the second long-side direction line are opposite to each other with a large-angle refraction greater than 90 degrees, and are surrounded by, A person who allows the energy line to pass through; and a blocking area to block the energy line around the transmission area, the length of the transmission area in the direction in which the first and second long-side direction lines extend is relative to The direction in which the first and second long-side direction lines extend is the length of the transparent region in the vertical direction. [Implementation Mode of the Invention] Printed below by the Consumer Consumption Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the implementation of the present invention will be described with reference to the drawings. form. The present embodiment is not limited to the present invention. Fig. 1 (A) is a schematic enlarged sectional view of an embodiment of a liquid crystal display element 100 and a TFT array substrate 130 of the present invention. The liquid crystal display element 100 seals the liquid crystal 110 between the color filter substrate 120 and the TFT array 130. The color filter substrate 120 is provided with a common electrode 140, and the TFT array substrate 130 is provided with a display electrode 150. With the common paper size, the Chinese National Standard (CNS) A4 specification (210X297 mm) applies -10- 548717 Intellectual Property of the Ministry of Economic Affairs ^ Printed by the Consumer Cooperative Cooperative A7 B7 V. Description of the invention (8) Electrode 1 4 0 and display electrode 1 50 forms a structure for supplying an electric field to the liquid crystal 1 10. Further, the display electrode 150 is connected to the drain of a TFT 200 disposed on the array substrate 130. The TFT 200 is formed in a large matrix on the TFT array substrate 130. In this embodiment, although the TFT 200 is a positive-turn type, a reverse-turn type TFT may be used. In addition, although the TFT array substrate 130 of this embodiment is used for a liquid crystal display element, the TFT array substrate 130 can also be used in an EL (electroluminescence) display, etc. Figure 1 (B) shows the TFT array substrate 130 used in the present invention. An enlarged sectional view of the TFT 2000. T F T 2 0 0 is formed on the insulating glass substrate 2 1 0. A method of manufacturing the TFT array substrate 130 will be described with reference to FIG. 9. To form the TFT 200, an insulating film 220 is deposited on an insulating glass substrate 210, and a polycrystalline polycrystalline silicon 230 is formed on the insulating film 220. The polycrystalline silicon 2 30 series is formed as follows. First, amorphous amorphous silicon is deposited on the insulating film 220. Then, the amorphous sand is irradiated with energy masks such as excimer lasers through a photomask (see Fig. 2 or 3). Thereby, the amorphous silicon is dissolved and a solid / liquid interface is generated, and the temperature gradient of the solid / liquid interface is used to recrystallize (lateral growth). Therefore, the amorphous silicon system is transformed into a polycrystalline polycrystalline silicon 230 by an energy line to form a channel portion 255 of the TFT. Further, a gate insulating film 240 is deposited on the polycrystalline silicon 230, and a gate 250 is formed. Then, the gate electrode 250 is used as a mask to implant impurities, and a source region 260 and a drain region 270 integrated on both sides of the channel portion 255 are formed on the polycrystalline silicon 230. Then, the through-source region 260 and the drain region are formed. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page)

-11-Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 548717 A7 B7 V. Description of the invention (9) 270 connection hole. Furthermore, a source 280 connected to the source region 260 and a drain 290 connected to the drain region 270 are formed. FIG. 2 (A) is an enlarged view of a part of the photomask 300 through which the energy line irradiated on the amorphous silicon passes. The photomask 300 is composed of a transparent transmission area 310 through which energy lines are transmitted, and a blocking area 320 provided with Cr (chrome) to block the energy lines. Fig. 2 (A) is a schematic diagram showing a transmission area 310 and a surrounding blocking area 320. The transmission area 310 of the reticle 300 in this embodiment is formed by a long-side direction line 330 and a long-side direction line 335 extending substantially parallel to each other; 335a, the long-side direction line 330 and the long-side direction line 335 are opposite directions to each other, and they are connected at an angle of 0 1 and an angle θ 2 which are greater than 90 degrees, and are connected by the inclined direction line 340 and the inclined direction line 345; and The other sides 330b and 335b of the long-side direction line 330 and the long-side direction line 335 face the long-side direction line 330 and the long-side direction line 335 opposite to each other, and are refracted at an angle of greater than 90 degrees 0 and 0, respectively. The adjacent oblique direction line 350 and the oblique direction line 355 are surrounded. The length L of the transmissive region 310 extending in the longitudinal direction extended by the longitudinal direction lines 330 and 335 is longer than the length (width) W of the transmissive region 310 in the direction perpendicular to the longitudinal direction. In this embodiment, the oblique direction lines 340, 345, 350, and 355 are formed to be shorter than the long side direction lines 330 and 335. In this embodiment, the long-side direction lines 330 and 335 and the oblique direction lines 340, 345, 350, and 355 are linear shapes. In addition, the angles 0 1, 0 2, Θ 3, and Θ 4 are all equal, and are large obtuse angles greater than 90 degrees. Long side direction line 330 This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page)

-12- 548717 A7 ____B7_ 5. Description of the Invention (10) and the length of the long-side direction line 335 are approximately equal to each other. The lengths of the oblique direction lines 34o, 345, 350, and 355 are also approximately equal. (Please read the precautions on the back before filling in this page.) Therefore, in this embodiment, the transmission area 310 is a hexagon with a long side direction X, and the long side direction line 330 and the center line 350 of the long side direction line 335 Symmetric shape for the boundaries. In addition, the length L and width W of the long-side direction X of the transmission region 310 are restricted by processing an optical system of an energy line from an energy source, an energy source device, or the like. The photomask 300 according to this embodiment further includes a blocking region 320 for blocking energy lines around the transmission region 310. Therefore, with the photomask 300 of this embodiment, energy lines from the energy radiation pass through the photomask 300 and are shaped. The energy line transmitted through the photomask 300 deteriorates the amorphous material into a polycrystalline material composed of crystalline particles. Line Generally, crystal grains grow from the temperature gradient of the solid / liquid interface after irradiating the energy rays. Therefore, the crystal grains grow from the periphery of the transmission region of the mask. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. The perimeter of the area 3 10 forms a long and slender hexagon with a true long side. Thus, the polycrystalline silicon crystallized by using the photomask 300 of this embodiment is formed of a crystal block 400 formed by a collection of a plurality of crystal grains as shown in FIG. 2 (B). Such a crystal block 400 is a collection of a plurality of crystal grains, and has a planar shape depending on the shape of the transmission region of the photomask 300. FIG. 2 (B) is an enlarged plan view showing one crystal block of polycrystalline silicon formed using the photomask 300. FIG. The crystal block 400 has the same shape as the transmission region 310. That is, the crystal block 400 of this embodiment is printed by the Chinese National Standard (CNS) A4 specification (210X297 mm) that is extended to approximately the same paper size. -13- 548717 A7 B7 Employee Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (i) Parallel long-side direction line 430 and long-side direction line 435; at one end 430a and 435a of long-side direction line 430 and long-side direction line 435, respectively, toward long-side direction line 4 3 0 and long The side direction lines 4 3 5 are mutually opposite directions, and the oblique direction line 440 and the oblique direction line 445 are refracted and connected at an angle greater than 90 degrees and an angle θ 2 respectively; and the long side direction lines 430 and the long sides, respectively. The other ends 430b and 435b of the direction line 435 are oriented opposite to the long-side direction line 430 and the long-side direction line 435, and are inclined and connected at an angle θ 3 and an angle θ 4 greater than 90 degrees, respectively. The oblique direction line 455 surrounds the surroundings. The length L of the transmissive region 320 in the longitudinal direction extended by the longitudinal direction lines 430 and 435 is longer than the length (width) W of the transmissive region 320 in the vertical direction opposite to the longitudinal direction. In this embodiment, the oblique direction lines 440, 445, 450, and 455 are formed to be shorter than the long side direction lines 430 and 435. The crystal block 400 shown in FIG. 2 (B) is formed by having a plurality of crystal grains 410 in any of the longitudinal directions Y0, y1, and y2. The crystal grains 410 series each have any shape in the longitudinal direction YQ, Yi, and Y2, and the respective longitudinal directions 长 ο'Υ! And the Y2 series are substantially consistent with the growth direction of the crystal grains 410. Since the angle 0 i, the angle Θ 2, the angle Θ 3, and the angle 0 4 are all obtuse angles greater than 90 degrees, the long-side direction Y0, the long-side direction Y !, and the long-side direction Y2 are not perpendicular to each other. In addition, the angle Θ 5 = between the long-side direction Yq and the long-side direction y1, the angle between the long-side direction YQ and the long-side direction Y2 06 =-02, Angle 07 = (Please read the precautions on the back before filling out this page). The size of the paper is suitable for the standard of China National Standards (CNS) A4 (210X297 mm). -14- 548717 Staff of Intellectual Property Bureau, Ministry of Economic Affairs Printed by the consumer cooperative A7 __ B7 V. Description of the invention (12) 1 80〇— Θ 3 〇 Therefore, according to the angle 01, angle 02, θ3, and angle θ4 are approximately 180 degrees, and the long side directions γ〇, Υι, and y2 Close to each other. However, in this embodiment, depending on the angle β !, the angle Θ 2, 0 3, and the angle 0 4 are close to 180 degrees, the length of each of the oblique direction lines 440 '445, 450, and 455 must be longer than the oblique direction lines 340, 345, 350 and 355 lengths. However, as described above, since the length L of the long-side direction X of the transmission region 310 is restricted by an optical system or an energy device processing energy lines, the angles 0 1, 0, 2, 3, and θ 4 can be limited. . The restriction is determined based on the length L, the width W of the long-side direction X, and the energy line used. Fig. 3 is an enlarged plan view of a portion of the photomask 300 shown in Fig. 2 (A) showing a plurality of transparent areas 3 10. The transmissive regions 3 10 shown in FIG. 3 (A) are arranged in a vertical direction (width direction) in a row in a direction opposite to the long side direction. Furthermore, the arrangement in the width direction of the transmission region 310 is staggered in the width direction of the transmission region 310. However, as shown in FIG. 11, the photomask 300 may be arranged only in the long side direction with a relatively elongated transparent area 3 10 arranged in the wide side direction. Fig. 3 (B) is a partially enlarged plan view of the polycrystalline silicon 230 after irradiating the energy line with the photomask 300 shown in Fig. 3 (A). When the energy line is irradiated through the photomask 300, the glass substrate 2 10 (refer to FIG. 1 (B)) moves with each irradiation. Thereby, polycrystalline silicon 230 as shown in FIG. 3 (B) can be obtained. Polycrystalline sand 2 3 0 is shown in Figure 3 (B), so that it has a long X direction (please read the precautions on the back before filling this page). (CNS) A4 specification (210X297 mm) -15- 548717 A7 B7 V. Description of the invention (13) Most of the crystal blocks 400 having a long shape and the same shape are aligned in a manner that the long side direction X is approximately the same. 4 0 2 are adjacent, so that most of them are parallel to each other (please read the precautions on the back before filling this page). The polycrystalline silicon 230 is used as an active layer for forming a channel portion of the TFT 200. Between each crystal block 400, a zigzag grain field line 404 formed by a plurality of oblique direction lines of the crystal block 400 is formed. Accordingly, the polycrystalline silicon 230 has a zigzag region 41 1 in which grain field lines 404 are formed; and a parallel region 420 in which the longitudinal direction of each grain field is substantially parallel, which is formed by a long side direction line of the crystal block 400. In addition, the angle of refraction of the grain field line 404 depends on the angles 0, 0, 02, 03, and 04. That is, any of the angles 08 = 2 (180-0,), Θ 8- 2 (180-0 2), 08 = 2 (18 0 · 03), or 08 = 2 (18 0-0 4). FIG. 4 is a plan view showing the arrangement of TFT560, 570, 580, and 590 when the polycrystalline silicon 230 of this embodiment is used as an active layer. TFT560 and TFT580 are arranged in a zigzag region 411, and TFT570 and TFT590 are arranged in a parallel region. 420. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, the direction of carrier flow in the channels of TFT570 and TFT590 is approximately the same as the long-side direction of the crystal grains in the parallel area 4 2 0. The direction in which carriers flow in the channels of the TFT 560 and the TFT 580 intersects with the longitudinal direction of the crystal grains in the zigzag region 4 1 1 obliquely. Generally, when polycrystalline silicon is used as a TFT semiconductor material, carrier systems are scattered in the grain field of crystal grains. The mobility is reduced due to scattered carriers. Therefore, when the carrier flows between the source and the drain of the TFT, the number of grain fields passed is in accordance with the Chinese National Standard (CNS) A4 specification (210X297 mm) at the paper size. -16- Consumption by employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the cooperative 548717 A7 B7_ 5. Description of invention (14) is better. Accordingly, the direction of the carrier flow is preferably parallel to the longitudinal direction of the crystal grains of the polycrystalline silicon. Thereby, a TFT having a high carrier mobility can be obtained. Therefore, in the TFTs 570 and 590, the carrier mobility is high, and the same carrier mobility as that of the TFTs 60 and 80 shown in FIG. 8 can be obtained. The carrier mobility of the TFTs 560 and 580 will be described with reference to FIG. 5. FIG. 5 (A) shows the channel portion of the conventional TFT 90 shown in FIG. 8 in a manner that the carrier mobility can be easily understood. Fig. 5 (B) shows the channel portion of the TFTs 560 and 580 of the present invention shown in Fig. 4 in a mode that makes it easy to understand the carrier mobility. The TFT channel length and channel width are represented by L and W, respectively. The grain field of the crystalline grains of polycrystalline silicon is shown by the dotted line. The width of each crystal grain is set to p. G is the gate and S is polycrystalline silicon. Furthermore, the arrow Z indicates the direction in which the carrier flows in the channel. In Fig. 5 (A), the particle field forms an angle of 90 ° with respect to the direction of carrier flow. In Fig. 5 (B), the carrier flows at an angle of 7 with respect to the direction of carrier flow. The angle is dependent on the angle (9 !, angle 02, angle β 3, and angle 0 4 in Figure 2. That is, 7; = 1 80 — 0!, 7? = 1 80 — 0 2, 77 = 180 — 03 Or 7 / = 180-04. In the channel part of TFT90, the number of crystal grains through which the carrier passes is L / p. In addition, in the channel part of TFT560 or TFT580, the number of crystal grains through which the carrier passes is sinU) · L / p. Since 0 ° < π < 90 °, the number of crystal grains through which the carrier passes is less than that of TFT560 or TFT580. Therefore, the number of grain fields across carriers is smaller than that of TFT560 or TFT580. Thereby, the carrier mobility of TFT560 or TFT580 is higher than that of TFT90. In addition, in order to make this paper size applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) (please read the precautions on the back before filling this page)

-17- 548717 Printed by the 8th Industrial Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (15) The required carrier mobility can be obtained during design, and the angle C can be set arbitrarily. Furthermore, by increasing the lengths of the oblique direction lines 3 4 0, 3 4 5, 3 5 0, and 355 shown in FIG. 2, 7 / can be made close to 0. Thereby, the carrier mobility of the TFT560 or TFT580 can be set to the same degree as the carrier mobility of the TFTs 570 and 590. FIG. 6 shows another form of the transmission area 310 of the mask 300 shown in FIG. 2 (A). In FIG. 6 (A), the inclined direction lines 3 4 0, 3 4 5, 350, and 355 of the transmission area 3 1 0 are distorted toward the inner side of the transmission area 310 opposite to the long side direction lines 330 and 335, forming an oval shape. Arc shape. In FIG. 6 (B), the oblique direction lines 340, 345, 350, and 355 of the transmission area 3100 are distorted toward the outside of the transmission area 310 in the opposite direction to the long side direction lines 330 and 335. Thereby, the transmission area 310 is formed into an elliptical shape. In FIG. 6 (C), the oblique direction lines 340 and 345 of the transmission area 310 are distorted toward the inner side of the transmission area 3 1 0 to form an elliptical arc. The oblique direction lines 350 and 355 are distorted toward the outside of the transmission area 310. . In FIG. 6 (D), instead of the oblique direction lines 340, 345, 350, and 355 of the transmission area 310, an oblique direction line 640 composed of a plurality of short sides 6403 and 640b is formed; an oblique composed of short sides 645a and 645b A direction line 645; an oblique direction line 650 composed of short sides 650a and 650b; and an oblique direction line 655 composed of 655a and 6 5 5 b. Thereby, the transmission area 310 can be not only hexagonal 'but also decagonal. In addition, by increasing or decreasing the short side, the transmission area 3 1 0 can be set to six. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page)

-18- 548717 A7 B7 V. Description of the invention (16) Polygons other than polygons and decagons. When using a mask having an embodiment of the transmission area of FIG. 6 (A), FIG. 6 (B), FIG. 6 (C), or FIG. 6 (D), the light is transmitted through the short side or part of the oblique direction line. The polycrystalline silicon on the area overlaps with the short side or the oblique direction line of other transmission areas, and irradiates the energy line. Thereby, even if the energy line is not irradiated, the channel portion does not remain amorphous. In addition, the oblique direction line includes the short-side obsession. That is, the oblique direction line may be formed not only by plural short sides but also by a single short side. The TFT array substrate 130 can be manufactured by using the photomask 300 shown in FIG. 3 (A) or FIG. 6 (A) to FIG. 6 (D). 9 (A) to 9 (F) are flowcharts of a method for manufacturing an array substrate according to an embodiment of the present invention. As shown in FIG. 9 (A), first, an insulating film 220 is formed on the insulating glass substrate 210 using a P E-CVD (Plasma Enhnaced Chemical Vapor Depositio n) method 'to prevent impurities from diffusing. As shown in FIG. 9 (B), next, an amorphous silicon layer 2 2 9 as an active layer with a film thickness of about 50 nm is deposited on the insulating film 220 using a PE-CVD method, and then returned at 500 ° C. Fire dissociates hydrogen from amorphous silicon 229. By implanting a low concentration of boron (B) on the amorphous silicon 229 ion, the amorphous silicon 229 becomes a low concentration impurity layer. As shown in FIG. 9 (C), an energy line radiated from an excimer laser generating device with energy of 1,000, for example, an excimer laser light generated by ELA (Excimer Laser Anneal) is irradiated to the Crystalline silicon 299. The intensity of the excimer laser is about the level of soluble amorphous silicon 299, for example, from 400 mj / cm2 to 600 mj / cm2. Therefore, as shown in Figure 2 (B), the paper size is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)

Printed by the Employees ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs-19- 548717 Α7 Β7 V. Description of the invention (17) Please read and read the introductory matters and fill in 5 ▲ The installation instructions indicate that the amorphous silicon 229 is melted and recrystallized . Therefore, the amorphous silicon 229 is transformed into a polycrystalline polycrystalline silicon 230. The steps of irradiating the amorphous silicon 229 with energy lines will be described in detail with reference to FIGS. 10 to 16. Fig. 9 (D) shows a state where all of the amorphous silicon 229 on the surface of the insulating film 220 is crystallized into the polycrystalline polycrystalline silicon 230. Then, a photoresist pattern (not shown) patterned with a photo-etched polycrystalline sand 2 30 is formed. As shown in FIG. 9 (E), the photoresist pattern is used as a mask to selectively use the CDE method. Remove polycrystalline silicon 2 3 0. As shown in FIG. 9 (F), the TFT 200 is formed on the polycrystalline silicon 230 remaining on the surface of the insulating film 220. The formation of the TFT 200 is as shown in FIG. 1 (B). Thus, the τ F T array substrate 130 is manufactured according to the procedures of FIGS. 9 (A) to 9 (F). Lines Here, referring to FIGS. 10 to 16, the steps of irradiating the energy lines will be described on the amorphous silicon 229 shown in FIG. 9 (C). Printed by the Employees' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Figure 10 is a pattern diagram of an excimer laser generating device 1000 irradiating an energy line on a glass substrate 2 10 with amorphous silicon 2 2 9. The laser light from the excimer laser light source 1010 passes through the illumination optical system 1020, the mask 300, and the projection lens 1 030 to the amorphous sand 229 on the glass substrate 210. The glass substrate 210 is fixed to the χΥZ tilt table 1040, and can be moved three times (XYZ direction) by driving the tilt table 1040 '. Each time the glass substrate 2 10 is moved by a fixed interval in the X direction (hereinafter also referred to as a stepping action), the excimer laser generating device 1 000 irradiates the amorphous sand 2 9 with laser light. In addition, this paper size applies the Chinese National Standard (CNS) A4 specification (210 × 297 mm) -20-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 548717 A7 B7 V. Description of the invention (18) Photomask 3 0 0 The laser light is reduced by a projection lens 1030 and irradiates the amorphous silicon 229. FIG. 11 is a view showing a mask pattern 300p of a photomask 300 scanned on a glass substrate 210. FIG. The X-Y axis shown in FIG. 11 is the same as the X-Y axis of the operating surface of the tilt table 1 040 shown in FIG. 10. The mask pattern 300p is a pattern projected onto the surface of the amorphous silicon 229 when laser light is irradiated onto the amorphous silicon 229. Generally, the glass substrate 210 mounted on the tilt table 1 040 is moved during the step operation. However, for easy understanding, FIG. 11 shows that the glass substrate 210 is fixed and the mask pattern of the mask 300 is in operation. Of course, the mask pattern can also be scanned by actually operating the mask 300. In the plane of the glass substrate 210, the mask pattern 300p of the mask 300 is scanned in the X-axis direction. This scanning is performed by continuously repeating stepping operations. At each stepping operation, the laser light is irradiated to the amorphous silicon 229. When the mask pattern 300p is scanned to the end of the glass substrate 229, the mask pattern 300p moves to the Y-axis direction and returns to the X-axis direction for scanning. The method for manufacturing an array substrate according to this embodiment is to irradiate amorphous silicon 229 with laser light using a mask 300 to crystallize it into polycrystalline silicon 230. Therefore, the array substrate manufacturing method of this embodiment can obtain the effect when the photomask 300 is used. That is, the array substrate manufacturing method according to this embodiment does not need to limit the design of the manufacturing steps of the TFT, and does not need to add additional steps. It is possible to manufacture an array substrate having a plurality of TFTs having a fixed performance with high carrier mobility. [Effect of the invention] The manufacturing method of the array substrate and the photomask according to the present invention do not need to limit the size of this paper to the Chinese National Standard (CNS) A4 specification (210X297 mm) '-21-(Please read the precautions on the back first (Fill in this page again)

548717 A7 B7 19- V. Description of the invention (

The design of the TfrT manufacturing step does not require an additional step, and it is possible to form an active layer of a plurality of TFTs having fixed performance with high carrier mobility. Please read the memorandum first and then fill in. [Schematic diagram] [To be explained] A cross-sectional view of an embodiment of a liquid crystal display device and a TFT array substrate of the first invention, and an enlarged cross-sectional view of a TFT used in the TFT array substrate of the present invention. An enlarged view of a portion of a mask through which an energy line projected on an amorphous silicon passes, and an enlarged plan view of a crystalline block of polycrystalline silicon formed using the mask. Fig. 3_ is a magnified view of a part of the photomask shown in Fig. 2 (A) showing a plurality of transmission areas, and a portion of polycrystalline silicon after irradiating the energy line with the photomask shown in Fig. 3 (A) Zoom in on the floor plan. FIG. 4 is a plan view showing the arrangement when the polycrystalline silicon 230 of this embodiment is used as an active layer, and the mode display is formed when the TFTs 560, 570, 580, and 590 are formed. Dong Yan :, The Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs prints a way to understand carrier mobility. The mode shows the channel part of the conventional TFT shown in Figure 8 and a way to easily understand carrier mobility. 1¾ The channel portion of the TFT of the present invention shown in FIG. 4 is shown. The other form of the mask transmission area shown in FIG. 2 (A) is shown. An enlarged view of a part of the known photomask and an enlarged plan view of crystal grains of polycrystalline silicon after irradiation of an energy line. FIG. 8 is a plan view showing the arrangement of a conventional polycrystalline silicon as an active layer and a mode display when forming a TFT. This paper size is in accordance with Chinese National Standard (CNS) A4 specification (210X 297 mm) -22- 548717 A7 B7 9th _ Flow chart of the manufacturing method of the array substrate of the Panming embodiment Figure 10 is an excimer laser generating device A schematic diagram of a state in which 1,000 glass glasses 2 10 having an amorphous 0 229 are irradiated with energy rays. FIG. 11 is a diagram of a mask 300p of a scanning mask 300 on a glass substrate 210. [Element drawing number description] 100 liquid crystal display element 110 liquid crystal 120 TFT array substrate 130 current source circuit 60, 70, 80, 90, 200 polycrystalline silicon 56, 570, 580, 590 down ^ down f Please read the precautions on the back first Fill in this page j

-Ordered by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives, printed 250 gates, 255 channel sections, 300 masks, 310 pass-through areas, 320 block areas, 330, 335, 430, 340, 345, 350, 435, 355, long side direction lines 440, 445, 450, 455 oblique square line 4 00 crystal block 4 1 0 crystal grain This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) -23- 548717 A7 B7 V. Description of the invention (21) 404 grain field line 411 Z-shaped area 420 Parallel area 640a, 640b, 645a 650b Short side 640, 645, 650, 655 1000 1010 1 020 1 030 1040 300p 31 Op 645b, 650a, 655a, 655b, (Please read the notes on the back before filling in This page) Inclination direction line Excimer laser generation device Excimer laser light source illumination optics Projection lens XYZ Inclined stage Mask pattern Plane pattern Printed by the Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperatives Paper size Applicable to Chinese National Standards (CNS) A4 size (210X 297mm) -24-

Claims (1)

548717 Printed by A8, B8, C8, D8, Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 6. Application for patent scope 1 1. A method for manufacturing an array substrate, comprising the following steps: a step of depositing an amorphous material on a transparent substrate; And a deterioration step, which uses a mask having the following areas: a transmission area, a first long-side direction line and a second long-side direction line extending substantially parallel to each other; and the first long-side direction line, respectively And the second long-side direction line, one by one, 'the table 1 long-side direction line and the second long-side direction line are opposite to each other, and are refracted at a large angle greater than 90 degrees, and the first and second are connected individually. 1 the oblique direction line and the second oblique direction line; and the first long side direction line and the second long side direction line are on the other ends of the first long side direction line and the second long side direction line, respectively, toward The opposite directions are refracted at a large angle of more than 90 degrees, and the third and fourth inclined direction lines are individually connected so as to allow the above-mentioned energy lines to pass through; Regional It is used to block the energy line, and the length of the transmission region in the direction in which the first and second long-side direction lines extend is longer than the vertical direction opposite to the direction in which the first and second long-side direction lines extend. The length of the transmission region is to change the amorphous material into the polycrystalline material by irradiating energy lines, and the deterioration step has the following steps: a moving step is to pass through the transmission region and irradiate the amorphous material In the case of an energy line, the transparent substrate is moved at a fixed interval in a direction perpendicular to the long side of the planar pattern projected on the surface of the amorphous silicon material, and the irradiation step is performed at each of the moving steps to make the above Energy lines are irradiated onto the amorphous material. (Please read the precautions on the back before filling and ordering. The paper size applies to the Chinese National Standard (CNS) Α4 size (210 X 297 mm) -25- 548717 Β8 C8 6. Application for Patent Scope 2 2 · The method for manufacturing an array substrate according to item 1 of the scope of patent application, wherein the first oblique direction line and the second oblique direction line are shorter than the first long-side direction line and the second long The side direction lines, the third oblique direction line, and the fourth oblique direction line are also shorter than the first long side direction line and the second long side direction line. 3. The method of manufacturing an array substrate according to item 1 of the patent application, wherein the length of the first long-side direction line and the length of the second long-side direction line are substantially equal. 4. The method for manufacturing an array substrate according to item (1) of the scope of patent application, wherein the transmission area is symmetrical with the center line of the first long-side direction line and the second long-side direction line as a boundary. 5. The method for manufacturing an array substrate according to any one of claims 1-4, wherein the first oblique direction line, the second oblique direction line, the third oblique direction line, and the fourth oblique direction line All are straight. 6. The method for manufacturing an array substrate according to item 5 of the scope of patent application, wherein the transmission region is hexagonal. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 7. The method of manufacturing an array and its plate as described in any one of the items 1 to 4 of the scope of patent application, wherein said first oblique direction line, said second oblique direction line, said first Any of the 3 oblique direction lines and the fourth oblique direction line is a shape refracted at an arc shape or an angle of 90 degrees or more. 8 · A method of manufacturing an array substrate, characterized by having the following steps: a step of depositing an amorphous material on a transparent substrate; a step of depositing an amorphous material on a transparent substrate; and a modification step. The crystal grains constitute the amorphous material. The size of the paper is applicable to the Chinese National Standard (CNS) A4 specification (21 × 297 mm) -26- 548717 A5 B8 C8 D8 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs ", Patent application scope 3 Photomask that is transmitted by energy lines with material deterioration, the photomask has the following areas: The transmission area is a light source radiating from the energy line, allowing the energy line to pass through and irradiating the amorphous material. The growth of the granules is formed in a direction that starts to go in a mutually non-straight direction to form an elongated shape; and the blocking area 'is used to block the energy line around the transmission area' and irradiates the energy line to deteriorate the amorphous material Is the above-mentioned polycrystalline material, and the deterioration step includes the following steps: The moving step is the irradiation of the energy line through the transmission area In the case of the amorphous material, the transparent substrate is moved at a fixed interval in a direction perpendicular to a long side direction of a plane projected on the surface of the amorphous material, and an irradiation step is performed to make the energy line at each moving step. Irradiate to the above amorphous material. 9. The method for manufacturing an array substrate according to item 8 of the scope of patent application, wherein in the above irradiation step, when the energy line is irradiated, the growth of the individual crystal grains is approximately parallel to each other 1 〇. A photomask is an energy line permeator that transforms amorphous material into polycrystalline material by radiating from the energy line. It is characterized by having the following areas: The transmission area extends from each other approximately in parallel. The first long-side direction line and the second long-side direction line; at one end of the first long-side direction line and the second long-side direction line, respectively, toward the first long-side direction line and the second long-side direction line are opposite to each other. , The first oblique direction line and the second oblique direction line that are respectively refracted at a large angle greater than 90 degrees; and At the other end of the 2nd long-side direction line, point to the 1st long-side direction line and the 2nd long-side direction. Please read Note I on the back side first The paper size of the book is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -27 548717 A8 B8 C8 D8 々, patent application scope 4 The lines are opposite to each other and refracted at a large angle greater than 90 degrees And the third inclined direction line and the fourth inclined direction line that are connected to each other and pass through the energy line; and a blocking area, which is used to block the energy line around the transmission area, and the first The length of the transmission region in a direction in which the second long-side direction line extends is longer than the length of the transmission region in a direction perpendicular to the direction in which the first and second long-side direction lines extend. (Please read the notes on the back before filling Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is again applicable to the Chinese National Standard (CNS) A4 (210X297 mm)