TW546670B - Method for electroless deposition and patterning of a metal on a substrate - Google Patents
Method for electroless deposition and patterning of a metal on a substrate Download PDFInfo
- Publication number
- TW546670B TW546670B TW091109790A TW91109790A TW546670B TW 546670 B TW546670 B TW 546670B TW 091109790 A TW091109790 A TW 091109790A TW 91109790 A TW91109790 A TW 91109790A TW 546670 B TW546670 B TW 546670B
- Authority
- TW
- Taiwan
- Prior art keywords
- scope
- layer
- substrate
- patent application
- item
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims abstract description 60
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 58
- 239000002184 metal Substances 0.000 title claims abstract description 58
- 238000000059 patterning Methods 0.000 title abstract description 7
- 230000008021 deposition Effects 0.000 title description 18
- 238000000151 deposition Methods 0.000 claims abstract description 25
- 238000000813 microcontact printing Methods 0.000 claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 239000003054 catalyst Substances 0.000 claims description 34
- 239000010410 layer Substances 0.000 claims description 30
- 239000010949 copper Substances 0.000 claims description 26
- 238000007639 printing Methods 0.000 claims description 22
- 239000011521 glass Substances 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 19
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 239000010931 gold Substances 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000012044 organic layer Substances 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- YYHYWOPDNMFEAV-UHFFFAOYSA-N icosane-1-thiol Chemical compound CCCCCCCCCCCCCCCCCCCCS YYHYWOPDNMFEAV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- -1 N- (2-aminoethyl) -3-aminopropyl Chemical group 0.000 claims description 3
- 230000004913 activation Effects 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000013545 self-assembled monolayer Substances 0.000 claims description 3
- 239000010944 silver (metal) Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000007654 immersion Methods 0.000 claims description 2
- 239000011241 protective layer Substances 0.000 claims 2
- 239000002094 self assembled monolayer Substances 0.000 claims 2
- LSDPWZHWYPCBBB-UHFFFAOYSA-N Methanethiol Chemical compound SC LSDPWZHWYPCBBB-UHFFFAOYSA-N 0.000 claims 1
- 230000003213 activating effect Effects 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000008267 milk Substances 0.000 claims 1
- 210000004080 milk Anatomy 0.000 claims 1
- 235000013336 milk Nutrition 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 239000004576 sand Substances 0.000 claims 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 13
- 239000000243 solution Substances 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 239000000976 ink Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 239000002356 single layer Substances 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 239000000084 colloidal system Substances 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- 238000009713 electroplating Methods 0.000 description 6
- 239000004205 dimethyl polysiloxane Substances 0.000 description 5
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 5
- 150000002739 metals Chemical group 0.000 description 5
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 5
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 150000003573 thiols Chemical class 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 238000013019 agitation Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 239000000806 elastomer Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000012041 precatalyst Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 229910021607 Silver chloride Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 1
- PEVJCYPAFCUXEZ-UHFFFAOYSA-J dicopper;phosphonato phosphate Chemical compound [Cu+2].[Cu+2].[O-]P([O-])(=O)OP([O-])([O-])=O PEVJCYPAFCUXEZ-UHFFFAOYSA-J 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 210000004709 eyebrow Anatomy 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 125000005207 tetraalkylammonium group Chemical group 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1605—Process or apparatus coating on selected surface areas by masking
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1886—Multistep pretreatment
- C23C18/1893—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/34—Alkaline compositions for etching copper or alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/061—Etching masks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/01—Tools for processing; Objects used during processing
- H05K2203/0104—Tools for processing; Objects used during processing for patterning or coating
- H05K2203/0108—Male die used for patterning, punching or transferring
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0502—Patterning and lithography
- H05K2203/0537—Transfer of pre-fabricated insulating pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0562—Details of resist
- H05K2203/0585—Second resist used as mask for selective stripping of first resist
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1168—Graft-polymerization
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
- H05K3/0079—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the method of application or removal of the mask
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/389—Improvement of the adhesion between the insulating substrate and the metal by the use of a coupling agent, e.g. silane
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Composite Materials (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemically Coating (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
546670546670
發明領域 本發明有關一種於基材上行金屬無電極沉積及上圖案之 方法。更詳言之,本發明有關一種方法,其中組合微接觸 印刷及無電極沉積之製程步驟。 發明背景,習知技藝 在基材上繪製金屬圖案為現代技術中一般需求且重要之 製程;其應用於例如微電子及顯示器製造上。此繪圖案一 般需要在基材整個表面上真空沉積金屬且使用微影蝕刻及 蝕刻技術選擇性移除^金屬之真空沉積及光阻劑消耗在製 造金屬結構中構成相當之成本因素,且限制了可藉使方式 繪圖案之基材大小。 在(絕緣)表面無電極沉積(後文稱ELD)金屬之技術可提供 再基材上真空沉積金屬之替代方法(例如參見"無電極電鑛 .基礎及應用”,G.O· Mallory, J.B. Hajdu編輯;美國電鍍廠 及表面拋光協會,歐蘭朵,F1,1990)。 金屬如銅、銀、金、鎳、鍺及鈷之無電極沉積為廣泛用 於印刷電路上製造微細金屬圖案之方法。無電極電鍍係藉 自動催化之氧化還原製程進行,其中欲沉積之金屬陽離子 藉可溶還原劑在欲形成之金屬圖形表面上還原,或在用以 起始沉積之觸媒表面上還原。此氧化還原製成一般僅發生 在可催化其之表面。非催化表面首先以金屬觸媒如鈀活化 後,發生金屬化。選擇性沉積可藉使催化基材選擇性去活 化獲藉觸媒使非反應性表面選擇性活化而達成。製造圖案 化觸媒之數種方法為已知,大部分基於微影蝕刻技術。藉 • 6 - 本纸張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 546670 A7 B7 五、發明説明(2 金屬無電極沉積產生之圖形大小可小如〇· 1微米。 微接觸印刷亦可提供使用光微影蝕刻進行金屬圖案化之 替代方法。 微接觸印刷(後文稱pCP)為形成具微米及次微米側向尺寸 之有機單層圖案之技術。其在藉戳印至基材上印刷分子之 形成某類圖案中提供實驗簡單性及彈性。迄今,大部分先 前技藝仰賴長鏈烷硫醇酸酯之顯著能力而在例如金或其他 金屬上形成自我組合(self-assembled)之單層。該等圖案可 作用為奈米薄層阻劑而保護該支撐金屬免受適當調配之蝕 刻劑之腐蝕或可選擇性放置流體在印刷圖案之親水性區域 上。具有可能小於1微米之自我組合單層圖案可使用溶於乙 醇之烧硫醇浴液作為”油墨’’及使用彈性體之”戮印”印刷在金 屬基材上而形成。該戳印係使用光微影蝕刻術或使用其他 技術如電子束微影蝕刻所製備之母模(模具)而製造。此戳印 表面圖案化揭示於例如ΕΡ-Β-0 784543。FIELD OF THE INVENTION The present invention relates to a method for electrodeless deposition and patterning of metal on a substrate. More specifically, the present invention relates to a method in which the process steps of micro-contact printing and electrodeless deposition are combined. Background of the Invention, Known Techniques Drawing metal patterns on a substrate is a generally required and important process in modern technology; it is used in, for example, microelectronics and display manufacturing. This drawing pattern generally requires vacuum deposition of metal on the entire surface of the substrate and selective removal using lithographic etching and etching techniques. Vacuum deposition of metal and photoresist consumption constitute a considerable cost factor in manufacturing metal structures, and limit The pattern can be used to draw the size of the substrate. The technology of electrodeless deposition (hereinafter referred to as ELD) of metal on (insulating) surfaces can provide an alternative method for vacuum deposition of metal on substrates (see, for example, " Electroless Electroless Mining. Basics and Applications ", GO · Mallory, JB Hajdu Editor; American Electroplating Plant and Surface Polishing Association, Orlando, F1, 1990). Electrodeless deposition of metals such as copper, silver, gold, nickel, germanium, and cobalt is a widely used method for making fine metal patterns on printed circuits. Electroless plating is carried out by an autocatalytic redox process, in which the metal cations to be deposited are reduced on the surface of the metal pattern to be formed by a soluble reducing agent, or on the surface of the catalyst used to initiate deposition. This oxidation Reduction is generally made only on the surface where it can be catalyzed. Non-catalytic surfaces are first metalized after being activated with a metal catalyst such as palladium. Selective deposition can selectively deactivate the catalytic substrate to obtain non-reaction through the catalyst. This is achieved by selective activation of the surface. Several methods for making patterned catalysts are known, most of which are based on lithographic etching techniques. Borrow • 6-This paper size applies to China Standard (CNS) A4 (210X297 mm) 546670 A7 B7 V. Description of the invention (2 The size of the pattern produced by metal electrodeless deposition can be as small as 0.1 micron. Micro-contact printing can also provide the use of photolithography etching for metal Alternative method of patterning. Micro-contact printing (hereinafter referred to as pCP) is a technique for forming organic single-layer patterns with lateral dimensions of micrometer and submicrometer. It prints molecules on the substrate by stamping to form a certain type of pattern. Provides experimental simplicity and flexibility. To date, most previous techniques have relied on the remarkable ability of long-chain alkanethiolates to form self-assembled monolayers on, for example, gold or other metals. These patterns can serve as Nano-layer resists to protect the supporting metal from the corrosion of properly formulated etchant or to selectively place fluids on the hydrophilic areas of the printed pattern. Self-assembled single-layer patterns that may be less than 1 micron can be dissolved in Ethanol burning thiol bath is used as "ink" and elastomeric "stamping" is printed on a metal substrate. The stamp is by photolithography or other The technology is made by a master (mold) prepared by electron beam lithography. This stamp surface pattern is disclosed in, for example, EP-B-0 784543.
Hidber等人,”鈀膠體之微接觸印刷:藉無電極沉積銅之微 米規格圖案化'Langmuir,卷12, 1996,第1375-1380頁中, 揭示一種在表面上形成微米-及次微米·圖案之方法。此方法 使用pCP印刷膠體,其可作為選擇性無電極沉積銅之觸媒。 由聚(二甲基矽氧烷)(後文稱PDMS)製造之圖案化彈性體戳 印用以遞送觸媒(以溴化四烷銨安定化且溶於曱苯之把膜體) 至基材表面。在基材表面上無電極沉積銅僅發生在印刷有 鈀膠體並轉移至該基材之處^藉該膠體催化之無電極沉積 形成具次微米尺寸圖形之金屬結構。 、 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)Hidber et al., "Microcontact Printing of Palladium Colloids: Micron-Specific Patterning of Copper by Electrodeless Deposition of Copper" 'Langmuir, Vol. 12, 1996, pp. 1375-1380, discloses a micro- and sub-micron pattern on the surface This method uses pCP printing colloid, which can be used as a catalyst for selective electrodeless copper deposition. Patterned elastomer made from poly (dimethylsiloxane) (hereinafter PDMS) is stamped for delivery A catalyst (a film stabilized with tetraalkylammonium bromide and dissolved in toluene) onto the surface of the substrate. The electrodeless deposition of copper on the surface of the substrate occurs only where the palladium colloid is printed and transferred to the substrate ^ The metal structure with sub-micron size pattern is formed by electrodeless deposition of this colloid. 、 This paper size is applicable to China National Standard (CNS) A4 specification (210X 297 mm)
裝 訂Binding
546670 A7546670 A7
_·23 A1揭示在基材上無電極⑽導電❹之方 =石夕使用具有壓印至基材表面上供印刷基材且在將印刷 基材浸入電錢浴之無電極沉積其間沉積有金屬之基材上提 供觸媒圖案之具圖案表面之戮印。 因此,該兩參考文獻揭示如何組合μ(:ρ及eld。概言之, 該等方式包含⑴以具有對ELD之觸媒具親和性之化^官能 度使基材衍生化,(ii)以觸媒溶液油印微米圖案之pDMs^ 印,(iii)在基材上印刷該觸媒,及(iv)在該印刷觸媒圖案上 ELD金屬。簡言之,此策略可表示為"印刷及肛〇"。此策略 可隨確·實印刷在歸上之物質而異,其㈣可能在基材上 印刷分子以增進觸媒對基材之親和性。此變化中,印刷基 材接著需浸入觸媒浴中以將觸媒加入基材印刷區域。其他 變化包含以ELD之觸媒層塗佈均勻塗層及印刷分子使/已存 在於該基材表面上之觸媒去活化。又另一變化可為以預觸 媒層均勻塗佈基材及印刷分子至此預塗怖之基材以活化該 預觸媒顆粒。_ · 23 A1 reveals that there is no electrode on the substrate ⑽ conductive square = Shi Xi uses metal that has been imprinted onto the surface of the substrate for printing substrate and the electrode is deposited by dipping the printing substrate into the electric money bath The substrate is provided with a patterned surface stamp of the catalyst pattern. Therefore, these two references disclose how to combine μ (: ρ and eld. In summary, these methods include: derivatizing the substrate with functionalities that have affinity for ELD catalysts; (ii) using The catalyst solution is imprinted with pDMs ^ printed on the micrometer pattern, (iii) the catalyst is printed on the substrate, and (iv) the ELD metal is printed on the printed catalyst pattern. In short, this strategy can be expressed as " printing and Anal 〇 ". This strategy may vary with the actual printed material, which may print molecules on the substrate to improve the affinity of the catalyst to the substrate. In this change, the printing substrate then needs to be Immerse in the catalyst bath to add the catalyst to the printed area of the substrate. Other changes include coating the ELD's catalyst layer with a uniform coating and printing molecules to deactivate / exist the catalyst on the surface of the substrate. One variation may be to uniformly coat the substrate and the printed molecules with the pre-catalyst layer to the pre-coated substrate to activate the pre-catalyst particles.
裝 訂 然而’該"印刷及ELD "策略及其可能之變化顯示有些嚴重 缺點。首先,在ELD之觸媒及玻璃基材間提供黏著性之化 學品易自我反應且無法輕易地油印至”傳統”PDMS戳印,而 無法均句地轉移至基材上。PDMS為疏水性弹性體且賦予盆 親水性之PDMS表面處理在此例中亦為必要。 其次,ELD之典型觸媒如Pd/Sn膠體由於該等膠體在其他 類溶液中一般不穩定因此以高度-酸性(一般為濃鹽酸)溶液使 用。該等膠體為許多金屬之ELD之觸媒且非常具活性。其Binding However, the 'this " printing and ELD " strategy and its possible changes show some serious shortcomings. First, the chemical that provides adhesion between the ELD catalyst and the glass substrate is easily self-reactive and cannot be easily imprinted onto a "traditional" PDMS stamp, and cannot be transferred uniformly to the substrate. PDMS surface treatment in which PDMS is a hydrophobic elastomer and imparts hydrophilicity to the basin is also necessary in this case. Second, typical ELD catalysts such as Pd / Sn colloids are used as highly-acidic (generally concentrated hydrochloric acid) solutions because these colloids are generally unstable in other types of solutions. These colloids are catalysts for ELD of many metals and are very active. its
線 -8 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 546670 A7 B7Line -8-This paper size applies to China National Standard (CNS) A4 (210X 297 mm) 546670 A7 B7
對ELD特別適合但高度酸性油墨與印刷工具之相容性有問 題·自油墨溢出之HC1氣體將腐钱印刷工具及戳印之金屬背 版’且該等蒸氣亦具有安全性問題。 除了該等缺點,迄今尚未並未鑑定出可與戳印相容之可 印刷之ELD之觸媒活化劑(或去活化劑)。此排除使用達到上 述’’印刷及ELD”以組合ELD及pCP之其他方式。 再者’當嘗試使用”印刷及ELD”之油墨時,發生尚未解決 之下列問題··如何油印該戳印?如何需使其乾燥?如何僅 在一次油印中重複使用戳印?如何自戳印清洗油墨?如何 在印刷期間控制及預防油墨於基材上之擴散?在無可變觸 媒活性之下如何在整個大基材上均勻油印戳印及達到油墨 轉移?且,重要地,如何以合理製程達到生產量以賦予,,印 刷及ELD”經濟地解決降低基材上製造金屬基材成本問題? 在無電極 >儿積金屬及其基材間達到良好黏著性為ELD最重 要之挑戰。在沉積期間、自ELD浴移開電鍍基材期間、清 洗或乾燥该新電鍍金屬期間、或隨後在加工後或裝置製造 步驟期間,無電極沉積金屬在電鍍浴中將喪失其對基材之 黏者性。結果,經常需要沉積物及基材間之良好黏著性且 、士 4使ELD製程所有細節最適化之結果,自得自供應者之 基材予以處理開始及後加工該沉積之金屬以於該材料中釋 出應力。 發明概述 本發月之目的係提供一種在基材上行金屬無電極沉 積及上圖案之方法,係組合微接觸印刷及無電極沉積之製 本紙張尺度適用中國(⑽x 297公爱) 546670 A7 ____B7 五、發明説明(6 ) 金屬之局部化ELD,但替代地,沉積之金屬可與另一金屬 重疊電鍍’其可微接觸印刷而作為银刻掩膜。 通常,製程流程如下: 1·藉沉積觸媒而製備電絕緣表面; 2.自溶液中無電極沉積第一金屬; 3·製備供印刷之第一金屬表面,亦即退火、使用形成氣體 之表面氧化物還原反應、空氣中氧化反應、清洗或經由 電沉積或無電極沉積而沉積額外金屬膜及製備第二金屬 表面供微接觸印刷; 4·使用可於隨後蝕刻步驟中作為蝕刻障壁之適當油墨之 μ〇Ρ使此表面圖案化;及 5·於適當溶液中蝕刻金屬或金屬膜。 最簡單之可能方式包含Au之ELD步驟,在八11上^1〇?烷硫 醇之自我組合單層之步驟及隨後選擇性钱刻AU2步驟。 在Au基材上降低至丨微米之解析度微接觸印刷烷硫醇為確 實建立之微接觸印刷之唯一應用(參見Delamarche等人,j. ?1^3.〇^111.:6,卷1〇2,1998,第 3324-3334頁)。其接著似乎 對發展以Αιχ之ELD為主之策略及以硫醇印刷該沉積之au及 使其蝕刻而圖案化中為最適當。 此方法由於有成本、Au對基材之不良黏著力等問題,且 Ik尋求之應用而定,有半導體污染問題(在石夕中形成重組中 心(牌)而由於Au原子似乎擴散入相鄰Si層)而不利。此應用 中亦可使用Ag,但Ag之ELD難以控制且典型上導致膜對平 滑絕緣基材之不良黏著力。Ag亦具有半導體污染問題,且 -11- 本纸張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)It is particularly suitable for ELD, but there is a problem with the compatibility of highly acidic inks with printing tools. The HC1 gas spilled from the ink will rot the printing tools and stamped metal back plates' and these vapors also have safety problems. In addition to these disadvantages, no catalyst activator (or deactivator) for printable ELD compatible with stamping has been identified to date. This excludes the use of other methods that achieve the above-mentioned "printing and ELD" to combine ELD and pCP. Furthermore, when trying to use "printing and ELD" inks, the following unresolved problems occur. · How to imprint the stamp? How? Need to make it dry? How to reuse the stamp only in a single imprint? How to clean the ink by self-printing? How to control and prevent the ink from spreading on the substrate during printing? Without variable catalyst activity Uniform imprint stamping on large substrates and ink transfer? And, importantly, how to achieve production volume in a reasonable process to give, printing, and ELD "economically solve the problem of reducing the cost of manufacturing metal substrates on substrates? Achieving good adhesion between electrodeless > cladding metals and their substrates is the most important challenge for ELD. During deposition, during removal of the electroplated substrate from the ELD bath, during the cleaning or drying of this new electroplated metal, or subsequent processing or device manufacturing steps, electrodeless deposited metal will lose its adhesion to the substrate in the electroplating bath. Person. As a result, good adhesion between the deposit and the substrate is often required, and the result of optimizing all the details of the ELD process is to start and post-process the deposited metal from the supplier's substrate for processing in the material. Relieve stress. SUMMARY OF THE INVENTION The purpose of the present month is to provide a method for depositing and patterning metal on electrodes on a substrate, which is a combination of micro-contact printing and electrodeless paper. The paper size is suitable for China (⑽x 297 public love) 546670 A7 ____B7 V. Description of the invention (6) Localized ELD of metal, but instead, the deposited metal may be plated on top of another metal, which can be printed in micro-contact to serve as a silver engraving mask. Generally, the process flow is as follows: 1. Preparing an electrically insulating surface by depositing a catalyst; 2. Depositing a first metal from the solution without an electrode; 3. Preparing a first metal surface for printing, that is, an annealed, gas-forming surface Oxide reduction reaction, oxidation reaction in air, cleaning or deposition of additional metal film through electrodeposition or electrodeless deposition and preparation of a second metal surface for micro-contact printing; 4. Use appropriate inks that can be used as etching barriers in subsequent etching steps ΜOP pattern this surface; and 5. Etch the metal or metal film in a suitable solution. The simplest possible way includes the ELD step of Au, the step of self-assembling monolayers of alkanethiol at 8-11 and the subsequent selective AU2 step. Resolution microcontact printing alkanethiol reduced to 丨 micron on Au substrate is the only application of microcontact printing that is indeed established (see Delamarche et al., J.? 1 ^ 3.〇 ^ 111 .: 6, Volume 1 〇2, 1998, pages 3324-3334). It then appears to be the most appropriate in developing an ELD-based strategy and printing the deposited au with a thiol and patterning it by etching. This method has problems such as cost, poor adhesion of Au to the substrate, and the application sought by Ik, and semiconductor pollution problems (formation of recombination centers (brands) in Shi Xi, and Au atoms seem to diffuse into neighboring Si Layer) but not. Ag can also be used in this application, but the ELD of Ag is difficult to control and typically results in poor adhesion of the film to a smooth insulating substrate. Ag also has semiconductor pollution problems, and -11- this paper size applies to China National Standard (CNS) A4 specifications (210X 297 mm)
裝 訂 546670 A7 B7 五、發明説明Binding 546670 A7 B7 V. Description of the invention
Ag易於電移動及腐蝕。Cu亦可以烷硫醇印刷且若考慮此金 屬表面上存在之氧化物而有蝕刻選擇性及其相對蝕刻劑之 高選擇性。至於Au及Ag,在平滑絕緣表面上電鍍之Cu膜黏 著性受到限制。 因此,提出另一方式,亦即第一金屬之ELD接著沉積第二 金屬及印刷。 由於單一ELD金屬(如Au、Ag、Cu)未提供所需性質如良 好黏著力及與pCP之相容性,因此多層金屬化及印刷製程可 能較佳。例如,Ni、Co或Pd(或其合金)之無電極沉積膜可 使用作為第一層及第二金屬層如Cu、Ag或Au(ELD或電鍍) 可使用於印刷及作為蝕刻障壁。尤其,沁及州合金(NiB、 NiP、NiWP、NiReP等)為在平滑絕緣基材上elD之優異推 薦物。數種錄浴為市售’其可產生良好導電性之電錢Ni。 本發明中,通常發展玻璃處理及製程而改良無電極沉積之 Ni之玻璃上之黏著性。Cu便利於電鍍、便宜、當電鍍時可 與Ni相容,且其可為微接觸印刷烷硫醇之良好基材。NiB及 Cu之高導電度有助於電鍍期間於大樣品上維持均勻電流密 度’其為獲得具有均勻厚度之電鍍掩膜。印刷之Cu可選擇 性蝕刻而作為該底下Ni之掩膜。此Cu掩膜若需要可在製程 結束時易於移除。 本發明"ELD及印刷,,製程之典型流程如下: 1·自溶液中於玻璃基材上接枝對ELD之觸媒具親和性之有 機層。 … 2·自溶液中於經處理玻璃上沉積均勻觸媒顆粒層及進行觸 -12- 本紙張尺度適用中國國家橾準(CNS) A4規格(210X297公釐)Ag is prone to electrical movement and corrosion. Cu can also be printed with alkanethiol and has an etch selectivity and a high selectivity to the etchant in consideration of the oxides present on the metal surface. As for Au and Ag, the adhesion of the Cu film plated on a smooth insulating surface is limited. Therefore, another method is proposed, that is, the ELD of the first metal is next deposited and printed. Since a single ELD metal (such as Au, Ag, Cu) does not provide the required properties such as good adhesion and compatibility with pCP, multilayer metallization and printing processes may be better. For example, electrodeless deposited films of Ni, Co, or Pd (or their alloys) can be used as the first and second metal layers such as Cu, Ag, or Au (ELD or electroplating). They can be used for printing and as etching barriers. In particular, Qinhezhou alloys (NiB, NiP, NiWP, NiReP, etc.) are excellent candidates for elD on smooth insulating substrates. Several kinds of recording baths are commercially available 'which can generate good electrical conductivity Ni. In the present invention, glass processing and manufacturing processes are usually developed to improve the adhesion on the glass of electrodeless Ni deposited. Cu is convenient for electroplating, cheap, compatible with Ni when electroplated, and it can be a good substrate for micro-contact printed alkanethiols. The high conductivity of NiB and Cu helps to maintain a uniform current density on large samples during electroplating ', which is to obtain a plating mask with uniform thickness. The printed Cu is selectively etched as a mask for the underlying Ni. This Cu mask can be easily removed at the end of the process if needed. The typical process of the ELD and printing process of the present invention is as follows: 1. An organic layer having an affinity for ELD catalyst is grafted on the glass substrate from the solution. … 2 · Deposit a uniform catalyst particle layer on the treated glass from the solution and perform contact -12- This paper size is applicable to China National Standard (CNS) A4 (210X297 mm)
裝 線 五、發明説明(8 ) 3·基材浸於ELD浴中以沉積所需金屬。 4·基材較好架設在陰極框架上並浸於電化學電 電鑛該犧牲之掩膜。框架接觸在其所有邊緣之金眉: 對此層分配均勾電流及避免基材: 層損壞(刮傷)。 展&裝置之金屬 5.掩膜藉微接觸印刷阻劑而選擇 綱。 _生保護(自我組合單層 6·掩膜及無電極沉積之金屬接著選擇性移除。 7·掩膜最後整個移除。 接著,提供本發明之方法㈣。亦述及此為纟一實例且 本發明並非受限於其中所述之該基材、冶金、蝕刻浴、化 學品等,而可使用其他基材及材料,且為熟知本技藝悉知 玻璃基材(Coming #1737)於室溫下在Ν·(2•胺基乙基卜弘胺 基丙基三甲氧基矽烷(後文稱EDA-Si,得自Gelest #SIA0591.0,0.250毫升於120毫升乙醇及2〇毫升水中)浸泡3 分鐘。此步驟期間,EDA黏合至玻璃上。該玻璃接著自接 枝浴中移除及以水清洗及乾燥。該玻璃基材在15(rc熱板上 或於烘箱中烘烤1 〇分鐘。此在對有些pd/以膠體具親和性之 玻璃上產生均勻薄接枝層。經處理玻璃冷卻後健存或立即 使用。 玻璃基材接著浸於酸性Pd/SiT溶液(得自Fidelity ,文件 #1018 ’以濃HC1稀釋50%)中30秒在接枝玻璃上形成ELD之 -13- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 546670Installation line 5. Description of the invention (8) 3. The substrate is immersed in the ELD bath to deposit the required metal. 4. The substrate is preferably mounted on the cathode frame and immersed in the mask of the sacrificial electrode of electrochemical power. The golden eyebrows where the frame touches all its edges: the current is distributed to the layer and the substrate is avoided: the layer is damaged (scratched). Development & Device Metals 5. Mask selection by micro-contact printing resist. _Bioprotection (Self-combination single layer 6. The mask and the electrodeless metal are then selectively removed. 7. The mask is finally removed entirely. Then, the method of the present invention is provided. This is also mentioned as an example And the present invention is not limited to the substrate, metallurgy, etching bath, chemicals, etc. described herein, but other substrates and materials can be used, and glass substrates (Coming # 1737) are well known in the art. At room temperature under N · (2 · aminoethylbumonaminopropyltrimethoxysilane (hereinafter referred to as EDA-Si, obtained from Gelest # SIA0591.0, 0.250 ml in 120 ml ethanol and 20 ml water) Soak for 3 minutes. During this step, the EDA is adhered to the glass. The glass is then removed from the graft bath and washed with water and dried. The glass substrate is baked on a 150 ° C hot plate or in an oven for 1 〇 Minutes. This produces a uniformly thin graft layer on some pd / colloidally compatible glass. The treated glass is cooled or used immediately after cooling. The glass substrate is then immersed in an acidic Pd / SiT solution (from Fidelity, File # 1018 '50% dilution with concentrated HC1) for 30 seconds to form ELD on the grafted glass -13- This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) 546670
均勻Pd/Sn觸媒顆粒層。 隨後’ Pd/Sn玻璃基材以去離子水大量清洗及浸於"加速劑" 溶液(得自Fidelity,文件#1019,以漢时】稀釋1〇%)中輝 ’接著以去離子水清洗及錢^此活化之玻璃基材放置 在80 C熱板上。已述及此活化或加熱步驟為非需要在eld 可以非活化觸媒充分作用之有些例中。 現在,該預加熱玻璃基材浸於NiB(Shipley,NipQsit㊣468 依建礅製備,以氨調整pH至7.2)中,在60 °C無電鍍浴, 但不攪拌,而以約20-30奈米/分鐘之速率沉積NiB。ELD NiB膜厚度可藉沉積速率及浸泡時間控制。Uniform Pd / Sn catalyst particle layer. Then "Pd / Sn glass substrate was washed and immersed in " accelerator " solution (extracted from Fidelity, file # 1019, diluted 10% in Chinese) with deionized water, followed by deionized water. Cleaning and cleaning ^ The activated glass substrate was placed on a 80 C hot plate. It has been mentioned that this activation or heating step is not necessary in some cases where eld can fully function with the non-activated catalyst. Now, the pre-heated glass substrate is immersed in NiB (Shipley, NipQsit㊣468, according to Jianjian, pH adjusted to 7.2 with ammonia), without electroplating bath at 60 ° C, but without stirring, but with about 20-30 nanometer NiB was deposited at a rate of meters per minute. ELD NiB film thickness can be controlled by deposition rate and immersion time.
Ik後,在150 C熱板上放置具有薄(約5〇至4〇〇奈米)NiB膜 歷時10分鐘,而改善Ni沉積及玻璃基材間之黏著性。 此步驟後,使用焦磷酸銅浴於NiB沉積物上電鍍cu薄膜 (50 奈米):1.1 克 CuS〇4 · 5h2〇,3 〇 克 Ν〜ρ2〇7及 2〇 〇 毫克 NaHJO4溶於120毫升去離子水中。此浴之卩^[約9且在3〇c>c 使用。典型上存在於無電極沉積之NiB上之Ni之天然氧化物 在電鍍前藉由將NiB-覆蓋之樣品浸於〇·3 M HC1溶液中而蝕 刻及以去離子水清洗。移除Νί〇χ並非極度需要但在犯及以 間提供良好黏著性。 以荨電壓計型號263A(EG&G銷售)在電壓固定於-0.7至-1 .〇γ (相對Ag/AgCl參考電極)操作下進行cu電鍍,而以鑛始之鈦 格栅(30 cm2,大面積之樣品需要較大電極)作為相反電極。 電鍍期間追蹤電流顯示Cu沉積速―率及其厚度(對50奈米之cu 為 0· 15 cm·2)。 -14- 本纸張尺度適用中國國家榇準(CNS) A4規格(210X297公釐)After Ik, a thin (about 50 to 400 nm) NiB film was placed on a 150 C hot plate for 10 minutes, which improved the Ni deposition and the adhesion between the glass substrates. After this step, a Cu thin film (50 nm) was electroplated on the NiB deposits using a copper pyrophosphate bath: 1.1 g of CuS04 · 5h20, 30 g of N ~ ρ207 and 200 mg of NaHJO4 in 120 ml Deionized water. This bath was ^^ [about 9 and used at 30c> c. The natural oxide of Ni, which is typically present on NiB deposited without electrodes, is etched and washed with deionized water by immersing the NiB-coated sample in a 0.3 M HC1 solution before plating. Removal of Νί〇χ is not extremely needed but provides good adhesion between the offender and others. Cu voltameter model 263A (sold by EG & G) was used for cu plating at a fixed voltage of -0.7 to -1.00 (relative to Ag / AgCl reference electrode), and a titanium grid (30 cm2, Large-area samples require larger electrodes) as opposite electrodes. The tracking current during plating shows the rate of Cu deposition and its thickness (0 · 15 cm · 2 for cu of 50 nm). -14- This paper size is applicable to China National Standard (CNS) A4 (210X297 mm)
裝 訂Binding
546670 五 A7 B7 、發明説明(1G )546670 Five A7 B7, invention description (1G)
Cu-覆蓋之基材浸於0·1 M HC1溶液中10秒以自表面移除氧 化銅,以去離子水清洗及印刷前乾燥以確保印刷步驟期間 形成均勻及密實之保護單層。 現在,由PDMS(道康寧公司之Sylgard® 184)製得之微圖 案化戳印首先以二十烷硫醇(ECT,由Robinson兄弟有限公 司提供,文件#SV109/4)於乙醇之0.2 mM溶液上油墨,乾燥 及用以印刷電鍍之銅20秒,其於接觸區域中形成單層。 未印刷之Cu在室溫於0.025 M KCN溶液(於去離子水中, 在pH 12緩衝)中以適當攪拌之下蝕刻(蝕刻速率約每分鐘50 奈米Cu)。此步驟期間未觀察到NiB沉積物之蝕刻。 隨後,NiB於1 M H2S04中在室溫及適度攪拌下蝕刻20分 鐘(蝕刻速率每分鐘5-10奈米NiB,此蝕刻速率亦隨圖案之 幾何而異)。若Cu掩膜仍受該硫醇單層保護時,此蝕刻之選 擇性極高;該Cu上之硫醇單層基此理由僅隨後移除。 現在樣品浸於含KOH及10% H202水溶液中(pH 14)歷時20 分鐘而移除所有有機層(銅上之ECT單層及玻璃上之EDA接 枝層)。存在於玻璃上NiB已蝕刻處上之Pd/Sn觸媒亦可在此 步驟期間藉向下蝕刻Sn、EDA接枝及微量玻璃而蝕刻。電 鍍之Cu在此步驟均一地蝕刻,但速率極低。若留在NiB間之 區域需充分透光則此步驟具重要性或由於留在該等區域之 有些Pd/Sn可阻斷有些光或在相鄰、鄰近NiB結構間導出某 些電流則可為電絕緣。 接著所有剩餘Cu於KCN之0.02ΓΜ水溶液(在pH 12緩衝)中 蝕刻2分鐘。 -15- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)The Cu-covered substrate was immersed in a 0.1 M HC1 solution for 10 seconds to remove copper oxide from the surface, washed with deionized water and dried before printing to ensure that a uniform and dense protective monolayer was formed during the printing step. Now, micropatterned stamps made by PDMS (Sylgard® 184 from Dow Corning) are first eicosanethiol (ECT, provided by Robinson Brothers, Inc., document # SV109 / 4) on a 0.2 mM solution of ethanol Ink, dried and used to print electroplated copper for 20 seconds, which forms a single layer in the contact area. Unprinted Cu is etched at room temperature in a 0.025 M KCN solution (in deionized water, buffered at pH 12) with appropriate agitation (etch rate is about 50 nm Cu per minute). No etching of NiB deposits was observed during this step. Subsequently, NiB was etched in 1 M H2S04 for 20 minutes at room temperature with moderate agitation (the etch rate is 5-10 nm NiB per minute, and this etch rate also varies depending on the geometry of the pattern). If the Cu mask is still protected by the thiol monolayer, the selectivity of this etch is extremely high; the thiol monolayer on the Cu is only subsequently removed for this reason. The sample was now immersed in KOH and 10% H202 aqueous solution (pH 14) for 20 minutes to remove all organic layers (the ECT single layer on copper and the EDA grafted layer on glass). The Pd / Sn catalyst existing on the etched place of NiB on the glass can also be etched by etching down Sn, EDA graft and trace glass during this step. The electroplated Cu is uniformly etched at this step, but the rate is extremely low. This step is important if the areas left between the NiBs need to be fully transparent or some Pd / Sn left in these areas can block some light or induce some current between adjacent and adjacent NiB structures. Electrical insulation. All remaining Cu was then etched in KCN's 0.02ΓM aqueous solution (buffered at pH 12) for 2 minutes. -15- This paper size applies to China National Standard (CNS) A4 (210X 297mm)
裝 訂Binding
Claims (1)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01810480 | 2001-05-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW546670B true TW546670B (en) | 2003-08-11 |
Family
ID=8183914
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW091109790A TW546670B (en) | 2001-05-15 | 2002-05-10 | Method for electroless deposition and patterning of a metal on a substrate |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP3808037B2 (en) |
KR (1) | KR100532515B1 (en) |
TW (1) | TW546670B (en) |
WO (1) | WO2002093991A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI417948B (en) * | 2006-06-16 | 2013-12-01 | Air Liquide | Electroless nip adhesion and/or capping layer for copper interconnection layer |
TWI594674B (en) * | 2014-10-17 | 2017-08-01 | 綠點高新科技股份有限公司 | A method of forming a patterned metal layer and an object with a patterned metal layer |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2857780B1 (en) * | 2003-07-18 | 2005-09-09 | Commissariat Energie Atomique | METHOD FOR MANUFACTURING ANISOTROPIC CONDUCTIVE FILM ON A SUBSTRATE |
US20060093732A1 (en) * | 2004-10-29 | 2006-05-04 | David Schut | Ink-jet printing of coupling agents for trace or circuit deposition templating |
WO2009108771A2 (en) * | 2008-02-28 | 2009-09-03 | 3M Innovative Properties Company | Methods of patterning a conductor on a substrate |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB811044A (en) * | 1957-01-18 | 1959-03-25 | Marconi Wireless Telegraph Co | Improvements in or relating to the manufacture of designs in metal foil upon insulating backing sheets |
EP0577187B1 (en) * | 1992-06-29 | 1995-12-13 | Koninklijke Philips Electronics N.V. | Method of providing a metal pattern on glass in an electroless process |
TW539763B (en) * | 1999-06-18 | 2003-07-01 | Ibm | Method for printing a catalyst on substrates for electroless deposition |
-
2002
- 2002-04-04 WO PCT/IB2002/001225 patent/WO2002093991A1/en active Application Filing
- 2002-04-04 JP JP2002590724A patent/JP3808037B2/en not_active Expired - Fee Related
- 2002-04-04 KR KR10-2003-7013492A patent/KR100532515B1/en not_active IP Right Cessation
- 2002-05-10 TW TW091109790A patent/TW546670B/en not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI417948B (en) * | 2006-06-16 | 2013-12-01 | Air Liquide | Electroless nip adhesion and/or capping layer for copper interconnection layer |
TWI594674B (en) * | 2014-10-17 | 2017-08-01 | 綠點高新科技股份有限公司 | A method of forming a patterned metal layer and an object with a patterned metal layer |
Also Published As
Publication number | Publication date |
---|---|
KR100532515B1 (en) | 2005-12-01 |
JP2004527133A (en) | 2004-09-02 |
KR20030094350A (en) | 2003-12-11 |
JP3808037B2 (en) | 2006-08-09 |
WO2002093991A1 (en) | 2002-11-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW539763B (en) | Method for printing a catalyst on substrates for electroless deposition | |
Geissler et al. | Fabrication of metal nanowires using microcontact printing | |
Hidber et al. | Microcontact printing of palladium colloids: Micron-scale patterning by electroless deposition of copper | |
Wolfe et al. | Fabrication of palladium-based microelectronic devices by microcontact printing | |
Lee et al. | A new patterning method using photocatalytic lithography and selective atomic layer deposition | |
JP2003288812A (en) | Metal nanoparticle cluster ink and metal pattern forming method using the same | |
US20080014356A1 (en) | Selective metal patterns using polyelect rolyte multilayer coatings | |
JP3827630B2 (en) | Method for forming a metal pattern | |
Ryspayeva et al. | Selective electroless copper deposition by using photolithographic polymer/Ag nanocomposite | |
Aldakov et al. | Selective electroless copper deposition on self-assembled dithiol monolayers | |
JP2005521238A (en) | Method for defining the source and drain and the gap between them | |
TWI415969B (en) | Preparation of nanostructures | |
EP1581031A1 (en) | Method of forming a pattern, conductive patterned material, and method of forming a conductive pattern | |
TW546670B (en) | Method for electroless deposition and patterning of a metal on a substrate | |
Mondin et al. | Fabrication of micro-and submicrometer silver patterns by microcontact printing of mercaptosilanes and direct electroless metallization | |
Wang et al. | Photomask-free, direct selective electroless deposition on glass by controlling surface hydrophilicity | |
JP2003082469A (en) | Metallic film pattern forming method | |
KR100550089B1 (en) | Metallic Nanoparticle Cluster Ink and Method for Forming Metal Pattern Using the Same | |
TWI375278B (en) | Method of enabling selective area plating on a substrate | |
Ng et al. | Ultra-violet direct patterning of metal on polyimide | |
JP2005272961A (en) | Conductive pattern material, metal particulate pattern material, and method for forming pattern | |
KR20100050699A (en) | Patterning method of metal line on flexible substrate using nanoimprint lithography | |
JP2005051151A (en) | Method for manufacturing conductive layer, substrate having conductive layer, and electronic device | |
JP4628914B2 (en) | Circuit pattern forming method | |
CN100428871C (en) | Method for forming metal wire pattern by ink-jet method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |