544794 A7 B7 五、發明説明（ 發明領域： 本發明係有關於去除蝕刻製程中微粒（particles)之方 法，特別疋有關於利用低溫快速熱氧化Themal Oxidation ; RTO)法與氫 ι 酸（Hydr〇fiu〇ric Α(^ ; Ηρ)溶液 去除微粒’但其應用不限於本領域。 發明背景： 為了因應積體電路製程朝向微小化及電性、傳輸速率 及品質的要求’兀件幾伯ρ闰 戍17圖形的尺寸不斷縮減。當線寬尺 寸降低、密度增加時’線路内連線間會更緊密的接近，同 時閑極氧化層的厚度持續性減少。然而每一道晶圓製程步 驟都是潛在性之污染源’製程中所產生微粒會阻礙接點通 路、圖形相連、缺少或増加額外的圖f、以及改變線寬， 而導致缺陷的生成’甚至元件特性失效”遺著積體電路技 術不斷的世代演進，由微粒所造成的缺陷已經成為大家所 關注的焦點，也愈來愈加深表面處理及清潔的迫切需要。 請參考第la圖至第le圖，係繪示f知技術在複晶石夕 (Polysilicon ; Poly-Si)層中形成開口之製程剖面圖。請參考 第la圖’首先提供基材10，在基材1〇上已依序形成複晶 矽層11、氧化層12以及硬罩幕層13。接著，在硬罩幕層 13上形成光阻層14，其中光阻層14已具有光阻圖案如 第1 a圖所示之結構。然後，以光阻層丨4為罩幕，利用例 如乾式#刻法’定義硬罩幕層丨3與氧化層1 2並暴露出部 份之複晶石夕層1 1 ’以形成開口 1 7 a、開口 1 7 b與開口 1 7 c， (請先閲讀背面之注意事項再填寫本頁) 訂· 線- 經濟部智慧財產局員工消費合作社印製 A7 _________B7 五 經濟部智慧財產局員Η消費合作社印製 、發明説明（ 其中例如於暴露之複晶矽層 留古w， 屬1之開口 17a與開口 ι7 有诚粒15’其中微粒15係衍生自硬罩幕層"上殘 去除光阻層丨4而形成如第 9 ^後， ^ ^ 风如弟lb圖所示之結構。之後，$ C請先閱讀背面之注意事項再塡寫本頁j 晶…i 利用例如乾式餘刻法，敍刻暴露之巷 夕，错以形成開口 17b，與開口 17d， 之後 之基材1 〇，而形成如第i η 、出4份 人 乐1 c圖所不之結構。 Ί如上述習知之製程，暴露之複晶石夕層！ ！上殘留的 1 5，會造成圖形相連、缺小卞极* 的微粒 線寬，而、首 少或增加額外的圖案、以及改微 請灸¥致缺陷的生成’甚至元件特性失效。舉例而古^ :$ 1c圖，開口 17a因為有微粒15殘留 ：’ 儀刻暴露夕雄曰rA a , 7 ^無法 各之複B曰矽層"而形成開口 17a，並暴露出 0 ’造成圖形的橋接(Bridge)。而開口 m也因有土 殘留’造成所形成之開口丨7d的線寬變窄，無法形成 口 17c’，如第U圖所示之結構。 y ^ 、主、為了解決微粒殘留的問題，一般於蝕刻製程後會進γ /月洗製程，而大部分的清潔方法可簡單歸納成濕式及= 式。濕式清洗法使用溶劑、酸、介面活性劑及水，以乾 貝 /JS& \ 刷洗、氧化、蝕刻及溶解微粒。在使用各種化學品 卜丁表 品經過超純水（Ultra-Pure Water ; UPW)的潤濕清潔。乾j /月洗製程則使用氣相化學物，一般是提供激發能量以促式 清潔晶圓所需之化學反應發生。此能量可以熱、電装或日 輪射等型態提供。除此之外，並可經由物理交互作用傳= 動能以達到清潔的目的。一般典型濕式的清洗流程係包2 本紙張尺度適用中國國家標準(CNS)A4規格(210Χ 297公爱) 544794 A7 B7 五、發明説明（） 使用例如氧化銨/過氧化氫/去離子水混合物（Amm〇nU_544794 A7 B7 V. Description of the invention (Field of the invention: The present invention relates to a method for removing particles in an etching process, and particularly to a method for using low temperature rapid thermal oxidation (Themal Oxidation; RTO) method and hydrogen acid) 〇ric Α (^; Ηρ) solution to remove particles', but its application is not limited to the field. BACKGROUND OF THE INVENTION: In order to respond to the miniaturization of integrated circuit manufacturing processes and the requirements of electrical properties, transmission rate, and quality, the number of components is ρ. 17 The size of the graphics is shrinking. When the line width is reduced and the density is increased, the interconnects within the lines will be closer together, and the thickness of the oxide layer will continue to decrease. However, each wafer process step is potential. Pollution source 'particles generated in the process will hinder the contact path, pattern connection, lack or addition of additional figure f, and change the line width, resulting in the generation of defects' and even the failure of component characteristics.' Evolving, the defects caused by particles have become the focus of everyone's attention, and the urgent need for deeper surface treatment and cleaning is also increasing. Please refer to FIGS. La to le, which are cross-sectional views showing the process of forming an opening in a polysilicon (Polysilicon; Poly-Si) layer by the known technology. Please refer to FIG. A polycrystalline silicon layer 11, an oxide layer 12, and a hard mask layer 13 have been sequentially formed on the substrate 10. Then, a photoresist layer 14 is formed on the hard mask layer 13, wherein the photoresist layer 14 has a photoresist pattern. The structure is shown in Figure 1a. Then, using the photoresist layer 丨 4 as a mask, for example, a dry #etching method is used to define the hard mask layer 丨 3 and the oxide layer 12 and a part of the polycrystalline stone is exposed. Evening layer 1 1 'to form opening 1 7 a, opening 1 7 b, and opening 1 7 c, (Please read the precautions on the back before filling this page) Order · Line-Printed by A7, Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs _________B7 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives, and the description of the invention (for example, the exposed polycrystalline silicon layer is left in the ancient w, the openings 17a and 1 of the genus 1 have particles 15 ′, and the particles 15 are derived from the hard cover The curtain layer " top residue removes the photoresist layer 丨 4 and is formed as shown in the ninth, ^ ^ wind as shown in the figure After that, please read the precautions on the back of the page before writing this page. J Crystal ... i Use, for example, the dry-cut method to describe the exposed lanes, and make mistakes to form the opening 17b, and the opening 17d, and then the substrate 1 〇, and the formation of the structure of the 4th human music 1c is not formed. Ί As in the conventional process, the exposed polycrystalline stone layer! The remaining 15 on the surface will cause the graphics to be connected and missing. The small line width of the small 卞 pole *, and the first few or add additional patterns, and to improve the generation of defects caused by micro-moxibustion, or even the failure of component characteristics. For example, in the old picture: $ 1c, the opening 17a is because of the particles 15 remaining: 'Yi Xi exposes Xi Xiong said rA a, 7 ^ can not be repeated B said silicon layer " and formed the opening 17a, and exposed 0' cause Graphical Bridge. The opening m also has a line width of the opening 7d, which is caused by the presence of soil residue, and the opening 17c 'cannot be formed, as shown in the structure shown in FIG. y ^, main, in order to solve the problem of particle residues, the γ / monthly washing process is generally performed after the etching process, and most cleaning methods can be simply summarized into wet and = types. The wet cleaning method uses solvents, acids, surfactants, and water to dry, scrub, oxidize, etch, and dissolve particles. After using various chemicals, pudding watches are moistened and cleaned by Ultra-Pure Water (UPW). The dry j / month process uses gas-phase chemicals, which typically provide the excitation energy needed to facilitate the chemical reactions required to clean the wafer. This energy can be provided in the form of heat, electricity, or sunburst. In addition, it can transfer kinetic energy through physical interaction for cleaning purposes. Typical typical wet cleaning process package 2 This paper size is applicable to Chinese National Standard (CNS) A4 specification (210 × 297 public love) 544794 A7 B7 V. Description of the invention () Use for example ammonium oxide / hydrogen peroxide / deionized water mixture (Amm〇nU_
Peroxide Mixture ; ΝΗ40Η/Η202/Η20，· APM)，以氧化並輕 (請先閱讀背面之注意事項再填寫本頁) 微蝕刻微粒，單以αρμ清洗，晶圓表面會殘留約5%至約 10%之微粒。即使ΑΡΜ清洗配合超音波震盪（Megas〇nic Vibration)的能量將微粒從晶圓表面移除，這種方式去除微 粒的能力仍然有限，約有3%的微粒會殘留在晶圓表面，而 且更糟的是閘極氧化層完整性（Gate Oxide Integrity ; GOI) 會失效（Failed)。由於準確地圖案轉換（Pattern Transfer) 在元件的如段製程是非常重要的’因此有必要提供更有效 去除蝕刻製程中微粒之方法。 發明目的及概述： 鑒於上述之發明背景中’於複晶矽層中形成開口之製 程中，定義硬罩幕層與氧化層後，殘留於暴露之複晶石夕層 上的微粒，會造成圖形相連、缺少或增加額外的圖案、以 及改變線寬，而導致缺陷的生成，甚至元件特性失效。即 使以APM清洗並配合超音波震盪的能量來去除微粒，不僅 去除微粒的能力仍然有限，而且閘極氧化層完整性會失 效。 經濟部智慧財產局員工消費合作社印製 因此，本發明的主要目的之一為提供一種去除钱刻製 程中微粒之方法，其係利用低溫快速熱氧化（Low-TemperatureRTO)法與 氫氟酸溶液去 除微粒 ，以提升製程 良率。本發明取代習知技術以APM清洗並配合超音波震 盪的能量來去除微粒，不僅改善去除微粒的能力，更避免 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) 544794 五、發明説明（） 閘極氧化層完整性失效。 根據以上所述之目的，本發明提 4捉伢了一種去除蝕 程中微粒之方法，至少包括·据祉苴从 ^ 、 v匕括·棱供基材，在基材上依 形成複晶矽層、第一氧化層以及硬罩幕 曰，丧者，定羞 罩幕層與第-氧化層並暴露出部份之複晶石夕層，以形、硬 數個第-開口；然後，利用低溫快速熱氧化法，氧化：： 之複晶矽層與微粒，使暴露之複晶矽層形成第二氧化2路 之後，利用氫氟酸溶液去除微粒與第二氧化層；以 硬罩幕層為罩幕，以例如乾式蝕刻法，蝕刻暴露之複晶石 層，以形成複數個第二開口並暴露出部份之基材。曰曰夕 圖式簡單說明： 本發明的較佳實施例將於往後之說明文字中輔以 列圖形做更詳細的闡述，其中： 第la圖至第lc圖係繪示習知技術在複晶矽層中形成 開口之製程剖面圖；以及 / f請先閱讀背面之注意事項再塡寫本頁) -訂· 經濟部智慧財產局員工消費合作社印製 第2a圖至第2e圖係繪示依據本發明之一較佳實施例 在複晶矽層中形成開 口之製程剖 面圖。 圖號對照說明： 5 含砍層 10 基材 11 複晶碎層 12 氧化層 13 硬罩幕層 14 光阻層 15 微粒 16、 16a、 16b、 16c 氧化層 線一 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) 544794 A7 ___B7 五、發明説明（） 17 …7b、17c、17d、17a，、m，' 17〇，開口 18a 、 l8b 、 18c 、 18a’ 、 l8b， 、 18c，開口 發明詳細說明： (請先閲讀背面之注意事項再填寫本頁) 本發明揭露一種去除蝕刻製程中微粒之方法，盆 用低溫快速熱氧化法與氫氟酸溶液去除微粒，以提 良率。為了使本發明之敘述更加詳盡與完備，可 :: 描：並配合第2a圖至第2e _，係繪示依據本發明： 佳實施例在複晶矽層中形成開口之製程剖面圖。 乂 請參考第2a圖，首先提供含矽層5，其中含矽層$係 選自於由矽基材10與複晶矽層丨丨所組成之族群。舉例而 吕，在矽基材1 0上依序形成複晶矽層丨丨、氧化層12以及 硬罩幕層1 3，其中矽基材丨〇係例如矽晶圓。接著，在硬 罩幕層13形成光阻層14，其中光阻層14已具有光阻圖案， 如第2a圖所示之結構。然後，以光阻層j 4為罩幕，利用 例如乾式蝕刻法，定義硬罩幕層13與氧化層12並暴露出 部份之複晶矽層1 1，以形成開口丨8a、開口 1 8b與開口 ^ ， 其中例如於暴露之複晶石夕層1 i之開口 1 8 a與開口 1 8 c上殘 留有微粒1 5，其中微粒1 5係衍生自硬罩幕層1 3，隨後， 去除光阻層1 4而形成如第2b圖所示之結構。 經濟部智慧財產局員工消費合作社印製 然後’利用快速熱氧化法，氧化微粒1 5與暴露之複晶 石夕層11’以形成氧化層16a、氧化層l6b、與氧化層l6c， 如第2c圖所示之結構。根據本發明之去除蝕刻製程中微粒 之方法，在氧化微粒1 5並形成氧化層16a、氧化層16b、 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 544794 A7 B7 五、發明説明（） (請先閱讀背面之注意事項再填寫本頁} 與氧化層1 6c時，係利用低溫快速熱氧化法，以不影響基 材中已植入之離子分佈的溫度下，處理約1秒至約6〇秒。 由於已植入基材中之離子在約9001以上之溫度會開始移 動’因此本發明利用之低温快速熱氧化法，係於例如約9 〇 〇 C以下之溫度，較佳溫度為8 〇 〇 °c以下，來氧化微粒1 5與 暴露之複晶矽層1 1 ,且不移動已植入基材中之離子，其中 暴露之複晶矽層1 1所形成之氧化層1 6 a、氧化層1 6 b、與 氧化層1 6c之厚度例如約1 4埃（Angstrom ; A)±約1 A。 、一\一口 接著，請參考第2d圖，利用酸性溶液去除微粒丨5、 氧化層16a、氧化層16b、與氧化層16c，而形成開口 18&、 開口 18b與開口 18c，如第2d圖之結構’其中酸性溶液為 氮氣酸（Hydr0flU0ric Acid ; HF Acid)溶液，係利用預定比 例之氫氟酸：水製備而成，而預定比例約} : i㈧。然後 以硬罩幕層1 3為罩幕，利用例如乾式蝕 十 观刻法，蝕刻暴露之 複晶矽層1 1，以形成複數個開口 ！ 8 a，、開 、 网口 18b，與開口 18c， 並暴露出部份之基材1 〇 ’而形成如第2 圖所示之結構。 根據本發明之去除蝕刻製程中微耠 …曰β丄 之方法，其特徵在 複晶石夕層中形成開口之製程中，係利用 友 、 他，皿快速熱氧化法 與氫氟酸溶液去除微粒，以提升製程p 又竿。舉例而言，在 經濟部智慧財產局員工消費合作社印製 疋義硬罩幕層1 3與氧化層1 2並暴露出却八 备囬分之複晶矽層！ ！ 後，如僅以APM清洗微粒，取樣三片曰 日日圓中仍殘留共約 40個微粒；另藉由APM清洗並配合护立 ,^ 七音波震盪的能量以 去除微粒，則取樣三片晶圓中仍殘留处^ 叉Μ共約10個至約20 544794 五、發明説明（ 個微粒；然而，利用太 ! y + 本1明之低溫快速熱氧化法與氫氟酸 岭液去除微粒，則取樣三 m g , 〜片日日圓中只殘留共約2個微粒。 ”、、貝見本發明能有效去除 *細:粒，更大為提升製程良率。 因此，本發明之一俱 ,α, . 1炎點就是提供一種去除蝕刻製程中 U粒之方法，其係利用 ^ Μ , &恤快逮熱氧化法與氫氟酸溶液去 除锨粒，以提升製程良率Peroxide Mixture; ΝΗ40Η / Η202 / Η20, · APM) to oxidize and light (please read the precautions on the back before filling in this page) Micro-etching particles, only cleaning with αρμ, the wafer surface will remain about 5% to about 10 % Of particles. Even if APM cleaning is combined with the energy of Megasonic Vibration to remove particles from the wafer surface, the ability to remove particles in this way is still limited. About 3% of the particles will remain on the wafer surface, and it is even worse. The gate oxide integrity (GOI) will fail. Since accurate pattern transfer is very important in the device's segment process, it is necessary to provide a more effective method for removing particles from the etching process. Object and summary of the invention: In view of the above-mentioned background of the invention, in the process of forming an opening in a polycrystalline silicon layer, after the hard mask layer and the oxide layer are defined, the particles remaining on the exposed polycrystalline silicon layer will cause a pattern. Connectivity, lack or addition of additional patterns, and changes in line widths lead to the creation of defects and even failure of component characteristics. Even if the particles are cleaned by APM and combined with the energy of ultrasonic vibration, not only the ability to remove particles is still limited, but the integrity of the gate oxide layer will be invalidated. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Therefore, one of the main objects of the present invention is to provide a method for removing particles in the money engraving process, which uses the Low-TemperatureRTO method and the hydrofluoric acid solution to remove Particles to improve process yield. The invention replaces the conventional technology with APM cleaning and the energy of ultrasonic vibration to remove particles, which not only improves the ability to remove particles, but also avoids the application of the Chinese National Standard (CNS) A4 specification (210X 297 mm) on this paper scale. Description of the invention () The integrity of the gate oxide layer has failed. According to the above-mentioned purpose, the present invention provides a method for removing particles in the etching process, which at least includes: providing a substrate from the substrate, and forming a polycrystalline silicon on the substrate; Layer, the first oxide layer, and the hard cover curtain, said the mourner, shame the curtain layer and the first oxide layer and expose a part of the polycrystalline stone layer, shape and hard several first openings; then, use Low-temperature rapid thermal oxidation method: oxidizes the polycrystalline silicon layer and particles: after the exposed polycrystalline silicon layer forms a second oxidation path, the hydrofluoric acid solution is used to remove the particles and the second oxide layer; For the mask, the exposed polycrystalline stone layer is etched by, for example, a dry etching method to form a plurality of second openings and expose a part of the substrate. Brief description of the day and night diagrams: The preferred embodiments of the present invention will be described in more detail in the following explanatory text with column graphics, in which: Figures la to lc show the conventional techniques A cross-sectional view of the process of forming an opening in the crystalline silicon layer; and / f Please read the notes on the back before writing this page)-Customized · Printed by Figure 2a to 2e of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A sectional view of a process for forming an opening in a polycrystalline silicon layer according to a preferred embodiment of the present invention. Description of drawing numbers: 5 Contains cutting layer 10 Substrate 11 Multicrystalline shredded layer 12 Oxidation layer 13 Hard cover curtain layer 14 Photoresist layer 15 Particles 16, 16a, 16b, 16c Oxidation layer line A paper size is applicable to Chinese national standards ( CNS) A4 specification (210X 297 mm) 544794 A7 ___B7 V. Description of the invention () 17… 7b, 17c, 17d, 17a ,, m, '17 〇, openings 18a, 18b, 18c, 18a ', 18b, 18c The detailed description of the invention of the opening: (Please read the precautions on the back before filling this page) The present invention discloses a method for removing particles in the etching process. The basin uses low temperature rapid thermal oxidation method and hydrofluoric acid solution to remove particles to improve the yield. . In order to make the description of the present invention more detailed and complete, a description of the process of forming an opening in the polycrystalline silicon layer according to the preferred embodiment of the present invention according to the present invention is shown in conjunction with Figures 2a to 2e_.乂 Please refer to Figure 2a. First, a silicon-containing layer 5 is provided. The silicon-containing layer $ is selected from the group consisting of a silicon substrate 10 and a polycrystalline silicon layer. For example, Lu, a polycrystalline silicon layer, an oxide layer 12 and a hard cover curtain layer 13 are sequentially formed on a silicon substrate 10, where the silicon substrate is a silicon wafer, for example. Next, a photoresist layer 14 is formed on the hard mask layer 13, wherein the photoresist layer 14 already has a photoresist pattern, as shown in FIG. 2a. Then, using the photoresist layer j 4 as a mask, for example, a dry etching method is used to define the hard mask layer 13 and the oxide layer 12 and expose a part of the polycrystalline silicon layer 11 to form openings 8a and 18b. And openings ^, for example, particles 1 5 a remain on the openings 18 a and 18 c of the exposed polycrystalite layer 1 i, and the particles 15 are derived from the hard cover curtain layer 13 and subsequently removed The photoresist layer 14 has a structure as shown in FIG. 2b. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs and then 'using the rapid thermal oxidation method to oxidize the particles 15 and the exposed polycrystalline spar layer 11' to form an oxide layer 16a, an oxide layer 16b, and an oxide layer 16c, such as section 2c The structure shown in the figure. According to the method for removing particles in the etching process according to the present invention, the particles 15 are oxidized and an oxide layer 16a and an oxide layer 16b are formed. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 544794 A7 B7 V. Invention Explanation () (Please read the precautions on the back before filling this page} When the oxide layer 1 6c is used, the low temperature rapid thermal oxidation method is used to process about 1 at a temperature that does not affect the distribution of implanted ions in the substrate. Seconds to about 60 seconds. Since the ions that have been implanted in the substrate will begin to move at a temperature above about 9001, the low temperature rapid thermal oxidation method used in the present invention is, for example, a temperature below about 900C, which is The optimum temperature is below 800 ° C to oxidize the particles 15 and the exposed polycrystalline silicon layer 1 1 without moving the ions implanted in the substrate. The exposed polycrystalline silicon layer 11 is oxidized. The thickness of the layer 16 a, the oxide layer 16 b, and the thickness of the oxide layer 16 c is, for example, about 14 Angstroms (Angstrom; A) ± about 1 A. Next, please refer to FIG. 2d to remove the particles using an acidic solution丨 5, the oxide layer 16a, the oxide layer 16b, and the oxide layer 16c, and Into the opening 18 &, the opening 18b and the opening 18c, as shown in the structure of Figure 2d, where the acid solution is a nitrogen acid (Hydr0flU0ric Acid; HF Acid) solution, which is prepared by using a predetermined ratio of hydrofluoric acid: water, and the predetermined ratio About}: i㈧. Then, using the hard mask layer 13 as a mask, the exposed polycrystalline silicon layer 1 1 is etched using, for example, a dry etching method to form a plurality of openings! 8 a, open, and network port 18b, the opening 18c, and a part of the substrate 10 ′ is exposed to form a structure as shown in FIG. 2. According to the method of the present invention, the method of removing micro- 耠 in the etching process is called β 丄, which is characterized by complex crystal In the process of forming the openings in the Shi Xi layer, the rapid thermal oxidation method and hydrofluoric acid solution are used to remove particles in order to improve the process. For example, in the Intellectual Property Bureau of the Ministry of Economic Affairs, the Consumer Cooperatives printed Make the hard cover curtain layer 1 3 and oxide layer 12 and expose the polycrystalline silicon layer which is eight times back!！ Then, if only the particles are cleaned with APM, three samples of Japanese yen and Japanese yen will still remain for about 40. Particles; cleaned by APM ^ The energy of the seven-wave oscillating to remove particles, there are still residues in the three wafers sampled ^ For a total of about 10 to about 20 544794 V. Description of the invention (particles; however, use too! Y + Ben 1 Mingzhi The low temperature rapid thermal oxidation method and hydrofluoric acid ridge solution were used to remove particles, and three mg were sampled. ~ Only two particles remained in the Japanese yen. ”, And see that the present invention can effectively remove * fine: particles, the greater is to enhance Yield of the process. Therefore, one of the present invention, α,. 1 inflammation point is to provide a method to remove U particles in the etching process, which uses the ^ M, & shirt thermal oxidation method and hydrofluoric acid solution removal Pellets to improve process yield
^ . 手。本發明取代習知技術以 APM /月洗並配合超音波震盪 盈的犯置來去除微粒，不僅改善去除 做粒的能力，更避免閙片 充間極虱化層完整性失效。^. Hands. The present invention replaces the conventional technology with APM / moon washing and the operation of ultrasonic vibration to remove particles, which not only improves the ability to remove particles, but also avoids the failure of the septal intercalation polaris layer integrity failure.
如熟悉此技術之人昌& _ A 貝所瞭解的，以上所述僅為本發明 之較佳實施例而已，並非 _ 非用以限定本發明之申請專利範 凡/、匕未脫離本發明所揭示之精神下所完成之等效改 變或修飾，均應包括在下述之巾請專 (請先閱讀背面之注意事項再填寫本頁} 、一叮. 線· 經濟部智慧財產局員工消費合作社印製 9 本紙張尺度適用中國國家標準(CNS)A4規格(210><297公釐)As Ren Chang, who is familiar with this technology, understands that the above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the patent application for the present invention. Equivalent changes or modifications made under the spirit revealed should be included in the following towels (please read the precautions on the back before filling out this page), Yiding. Line · Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperatives Printed on 9 paper sizes for China National Standard (CNS) A4 specifications (210 > < 297 mm)