TW543211B - Manufacturing method of LED having transparent conduction adhesion layer - Google Patents

Abstract

A manufacturing method of LED having transparent conduction adhesion layer is disclosed, which is to glue together the LED stack layer and a transparent substrate by an adhesion layer, wherein a predetermined distribution of pattern is formed on the adhesion layer, the upper and lower surfaces of the adhesion layer have a reaction layer respectively, and part of the upper and lower reaction layers contact mutually. The adhesion layer can prevent the generation of peeling-off due to thermal effect, so that the adhesion effect of the LED stack layer and the transparent substrate is even better to increase the yield rate of process.

Description

543211 V. Description of the invention (1) The present invention relates to a light-emitting diode system method, and more particularly to a light-emitting diode system method with a bonding layer. The application of light-emitting diodes is quite wide, for example, it can be applied to optical display devices, traffic signals, data storage devices, communication devices, lighting devices, devices, and medical devices. How to improve the brightness of light-emitting diodes is an important issue in the manufacture of light-emitting diodes. $ Patent Publication No. 4740 94 of the Republic of China discloses a light-emitting diode and a method for manufacturing the same. A light-emitting diode is laminated with a transparent substrate by using a transparent insulating adhesive layer. Because this method uses heating to bond two bulk materials together, because the thermal expansion coefficient of traditional adhesives is about 10_60PPm / cC, and the thermal expansion coefficient of semiconductor materials is about 21ppm / ma ° C, when the component bonding area is less than At lcm2, the adhesion effect can still be maintained, but when the component is larger than 1cm2 or is stuck! In the case of wafers larger than one inch, because of the large bonding area, the thermal expansion coefficient difference between the adhesive and the semiconductor is too large. Therefore, when the two wafers are bonded with the -adhesive layer, the force during the process: temperature effect, the thermal expansion coefficient difference is too large , So that the production of two wafers, as shown in Figure 1. When thinking about how to solve the aforementioned shortcomings, the inventor of the present case obtained an inspiration for the invention, and thought that if a light-emitting diode and a light-emitting diode substrate were bonded by using a bonding layer, a predetermined distribution was formed on the bonding layer. In addition, a reaction layer exists on the bonding surface of the light-emitting diode stack and the transparent conductive adhesive layer, and on the bonding surface of the transparent substrate and the transparent conductive adhesive layer to enhance the bonding strength. The light-emitting diode stack Layer, distributed bonding layer and transparent substrate are subjected to pressure and heating, the distributed bonding

543211 V. Description of the invention (2) Because the layer has enough space for the thermal expansion of the adhesive layer, the adhesive layer can be evenly distributed to form a good bonding effect. In this way, the problem of peeling caused by the thermal expansion effect can be solved. SUMMARY OF THE INVENTION The main object of the present invention is to provide a light-emitting diode system method with a bonding layer. In the process, a light-emitting diode stack is connected to a transparent substrate by using a transparent bonding layer, wherein the bonding layer is on the bonding layer. A predetermined distributed pattern is formed, in addition, a reaction layer exists on the bonding surface of the light emitting diode stack and the transparent bonding layer, and the bonding surface of the transparent substrate and the transparent bonding layer respectively, and the light emitting diode is stacked, The first reaction layer, the distributed transparent adhesive layer, the second reaction layer, and the transparent substrate are superimposed. Because the adhesive layer has a distributed pattern, after pressure heating, there is enough space for the adhesive layer with a large thermal expansion coefficient. The uniform expansion outwards makes the reaction layer and the distributed transparent adhesive layer have good bonding, so as to avoid the problem of easy peeling in the subsequent process and achieve the purpose of improving the process. According to a preferred embodiment of the present invention, a light-emitting diode system with a bonding layer includes the following steps: a second contact layer, a second binding layer, and a A light-emitting layer, a first tie layer, a first contact layer, a transparent conductive layer, and a second reaction layer constitute a first stack; a first reaction layer and a transparent adhesive layer are formed on a second substrate Forming a second stack; forming a predetermined distribution pattern on the transparent adhesive layer; using the transparent adhesive layer to surface the second reaction layer of the first stack and the surface of the first reaction layer of the second stack Combine

543211

Together; removing the first substrate to form a third stack; appropriately engraving the third stack to the transparent conductive layer to form a transparent conductive layer to expose the surface region, and the second contact layer A first wiring electrode and a second wiring electrode are formed on the layer and the exposed surface area of the transparent conductive layer, respectively. The first substrate is composed of at least one material selected from the group consisting of Gap, GaAs, and Ge; the second substrate is composed of SlC, A 1 203, glass, quartz, GaP, GaAsP At least one material or other replaceable materials in the group of materials composed of AlGaAs and AlGaAs; the aforementioned distributed transparent bonding layer comprises a material selected from polyimide (1) 〇1711111〇 ^, referred to as PI), benzocyclobutane At least one material from the group consisting of benzocyclobutane (BCB) or perf luorocyclobutane (PFCB); the first reaction layer includes a material selected from the group consisting of §1, T 1 or Cr. At least one material constituting the material group; the second reaction layer includes at least two materials selected from the group consisting of Si Nx, Ti, or Cr; the first contact layer includes the material selected from KGap, GaAs ,

At least one material from the group of materials consisting of GaAsP, InGaP, AlGalnP, and AlGaAs; the first binding layer, the light-emitting layer, and the second binding layer each include AlGalnP; the second contact layer includes a member selected from Gap: ^

At least one material from the group consisting of GaAs, GaAsP, InGaP, AlGaInP &A1GaAs; the transparent conductive layer includes a material selected from the group consisting of indium tin oxide, emulsified mineral tin, hafnium tin oxide, zinc oxide, zinc tin oxide, au, G At least one material in the material group composed of e A u and N i / A u. Detailed description

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Stop- = i system Γ2 'According to a preferred embodiment of the present invention, there is a partial cross-sectional view of the array 1 formed by a two-port χ method, wherein the transparent adhesive two-white etching method forms a plurality of rectangular patterns. When the rectangle / f is larger than the size of the grains after cutting, the bonding layer on some of the grains will not have an etched pattern, and the bonding layer on some of the grains will have an etched pattern. The rectangular pattern is smaller than the size of the grains, so all the bonding layers of the aa grains after cutting J have an etched pattern. The manufacturing method of the light-emitting diode array includes the following steps: forming a second contact layer 17, a second binding layer 16, a light-emitting layer 15, and a first layer on a first substrate 18 (not shown in the figure) in this order. The first binding layer 14 and a first contact layer. A transparent conductive layer 21 and a second reaction layer 22 constitute a first stack. A first reaction layer U and a transparent adhesive layer 12 are formed on a second substrate 10 to form a second stack.预定 A predetermined rectangular pattern is formed on the transparent adhesive layer, the pattern is smaller than the size of the crystal grains after cutting; the transparent adhesive layer is used to surface the second reaction layer of the first stack and the first reaction layer of the second stack The surface is bonded together: 1 constitutes a third stack; the first substrate 18 is removed to form a fourth layer; the fourth stack is appropriately etched to the transparent conductive layer 2 to form a transparent conductive layer An exposed surface area; and a first wiring electrode 9 and a second wiring electrode 20 are formed on the exposed surface area of the second contact layer 17 and the transparent conductive layer, respectively. y Fig. 3 shows a method for manufacturing a light-emitting diode array 1 in which a transparent adhesive layer is used for bonding to fruit ', wherein the predetermined pattern of the adhesive layer after the money is carved is rectangular. It can be seen from the figure that there was no peeling after the two stacks were bonded. Please refer to FIG. 4, according to another preferred embodiment of the present invention, an adhesive layer is provided.

Page 8 543211 V. Description of the invention (5) Light-emitting diode 2 whose structure is made of "" with its differences; = Front: The light-emitting two-reflective layer 23 of the embodiment, reflected by the metal : The Jiaguan embodiment increases the reflection to bring out the light. ≪ The radiation layer will direct the light toward the reflection layer through the material. The substrate includes at least one material selected from the group consisting of GaP, GaAs, or Ge; the foregoing; The second substrate includes at least one material selected from the group of materials, glass j, shiyang, GaP, GaAsP, and AlGaAs: at least one kind of day-like material or other replaceable materials; the aforementioned distribution = moon bonding layer system Containing at least one or two kinds of materials selected from the group consisting of polyimide hydrazone, BCB, or perfluorocyclobutane (PFCB); the first reaction layer system includes At least one material selected from the group consisting of SiNx, Ti, or ^; the second reaction layer includes at least one material selected from the group consisting of Si Νχ, Ti, or Cr; the metal reflective layer includes From In, Srl, Au, Pt, Zrl, Ge

At least one material from the group of materials consisting of Ag, Ti, Pb, Pd, Cu, AuBe, AuGe, Ni, PbSri, or AuZn; the first contact layer includes a material selected from the group consisting of GaP, GaAs, GaAsP, InGaP, AlGalnP, or At least one of the materials in the group consisting of AlGaAs; the first binding layer, the light-emitting layer, and the second binding layer include A 1 Ga I nP; the second contact layer includes a member selected from GaP, GaAs, and GaAsP. At least one material from the group of materials consisting of InGaP, AlGaInP, or AlGaAs; the transparent conductive layer includes a material selected from the group consisting of tin oxide, tin oxide, tin oxide, zinc oxide, zinc tin oxide, Be Au, GeAu, or N At least one material in the material group formed by i / Au; the predetermined pattern of the aforementioned adhesive layer may include a rectangular, circular, or strip shape. 543211 V. Description of the invention (6) Although the light-emitting diode of the present invention has been disclosed above with preferred embodiments, the scope of the present invention is not limited to the above-mentioned preferred embodiments, and should be defined by the scope of the following patent applications . Therefore, any person skilled in the art can make any changes without departing from the scope and spirit of the patent application of the present invention. #

Page 10 543211 Brief description of the diagrams Brief description of the diagrams: Figure 1 is a photo showing the results of the light-emitting diodes after being bonded using an unordered distributed pattern bonding layer. Fig. 2 is a schematic diagram showing a light emitting diode array having a bonding layer formed according to a preferred embodiment of the present invention. Fig. 3 is a photograph showing the result of the bonding of the light emitting diode array having a predetermined distributed pattern in Fig. 2. Fig. 4 is a schematic diagram showing a light emitting diode having a bonding layer formed according to another preferred embodiment of the present invention.

Symbols and explanations 1 Light-emitting diode 2 Light-emitting diode 10 Second substrate 11 First reaction layer 12 Transparent adhesive layer 13 First-contact layer 14 First _ bunch of m layers 15 Light-emitting layer 16 Second binding layer 17 Second Contact layer 19 First wiring

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Claims (1)

543211 Case No. 91115511 Month q_ Amendment 6. Scope of patent application Form a first reaction layer. 5. The light-emitting diode system with a bonding layer as described in item 3 or 4 of the scope of patent application, further comprising forming a transparent conductive layer between the first reaction layer and the LED stack. 6 · The light-emitting diode system with a bonding layer as described in item 5 of the scope of the patent application, wherein the transparent conductive layer includes a material selected from the group consisting of indium tin oxide, tin oxide, tin oxide, zinc oxide, and zinc oxide. At least one material from the group of materials consisting of tin, GeAu, BeAu, or Ni / Au. . In the first enveloping package, it is more favorable, and please apply for it in the special school, as in Method 7 · Layering of the two polar hairs of the body. The second layer of the base is requested to apply, but it is the same as the method of the second layer. The body pole% is as described in item 2 of the scope of the patent application, the light emitting diode system method with a bonding layer, wherein the method further includes forming a reflective layer on the second substrate. 10 · The method of mounting a light-emitting diode with a bonding layer as described in item 9 of the scope of the patent application, wherein the method further includes forming a second reaction layer on the reflective layer. Page 14 543211 11 · The method of manufacturing a light-emitting diode with a bonding layer according to item 1 of the scope of the patent application, wherein the method further includes forming a second reaction layer between the second substrate and the bonding layer. 1 2 · As described in item 2 of the scope of the patent application, the light-emitting diode system method with a bonding layer 'wherein' further includes forming a second reaction layer on the second substrate. 0 1 3 · As in the scope of patent application No. 1 Item 2 or Item 2 of the light-emitting diode system with a bonding layer, wherein the second substrate comprises a material group selected from the group consisting of Si C, A1 203, glass, quartz, Gap, GaAsp, and AlGaAs At least one material or other alternative materials. 1 4. The light-emitting diode method with a bonding layer as described in item 1 or 2 of the scope of the patent application, wherein the bonding layer is selected from the group consisting of polyimide (PI), benzocyclobutane (BCB) or perfluorocyclobutane (PFCB) at least one of the material group or other alternative materials. 1 5 · The light-emitting diode system with an adhesive layer as described in item 1 or 2 of the scope of patent application, wherein the first reaction layer comprises a composition selected from the group consisting of S i Νχ, T i or C r At least one material in the group of materials or other substitutable materials. 543211 Amendment No. 91115511 6. Scope of Patent Application __ 16. The method of photodiode system as described in item 丨 or 2 of the scope of patent application, where the second reaction layer is a package, which includes: . At least one kind of material in the material group formed by the layer of hair G it can be two X one 7. A light-emitting diode system with a bonding layer, to people. Select a first substrate; Dagger 3. In the first A second contact layer, a second layer, a light-emitting layer, a first tie layer, a first contact layer, and a transparent 4 electrical layer and a second reaction layer are formed on the substrate in order to form a first stack; A second substrate is selected to form a first reaction layer and a transparent adhesive sound on the second substrate to form a second stack; that is, a predetermined distribution pattern is formed on the transparent adhesive layer; The surface of the second reaction layer of the first stack and the second stack are combined to form a third stack; the first substrate is removed to form a fourth stack; and the fourth stack is appropriately The transparent conductive layer is etched straight to form an exposed surface area of the transparent electric layer, and a first wiring electrode and a second wiring electrode are formed on the second contact layer and the exposed surface area of the transparent conductive layer, respectively. 1 8 · The light-emitting diode system with a bonding layer as described in item 17 of the scope of the patent application, wherein the second substrate is selected from the group consisting of Si C, A1 203, and glass im in 543211 ---- face 91115511_ _Year J day lx 6. Scope of patent application " -------- Glass, quartz, Gap, GaAsP & A1GaAs constitute a group of materials or other alternative materials. At least 19 · As described in item 17 of the scope of the patent application, the distribution system method with a cohesive layer is used, the distribution of the cohesive layer is selected from the group consisting of: ^ polar amine (PI), benzocyclobutane (BCB) or perfluorocyclobutane (PFCB) = at least one material in the sub-material group or other alternative materials. . 20. The light-emitting diode system with a bonding layer as described in item 17 of the scope of the patent application, wherein the first reaction layer includes at least one material selected from the group consisting of SiNx and the material group or other Substitute material ^ dou ^ 2 1 · The light-emitting diode system with a bonding layer as described in item 7 of the scope of the patent application, wherein the second reaction layer is composed of SiNx, Ti or ^ At least one material in the material group or other replaceable materials 2 2 · The light-emitting diode system with a bonding layer as described in item 7 of the patent application scope, wherein the first contact layer comprises At least one material from the group of materials consisting of GaP, GaAs, GaAsP, InGaP, AlGalnP, and AlGaAs. Page 17 543211 Amendment No. 9111 ^) 1 6. Scope of patent application 24. If the scope of patent application is 1, 2, 2 or 17, the light-emitting diode system with a bonding layer, in which the predetermined distribution The pattern contains a plurality of contact bars. ^ 25. The light emitting diode method with a bonding layer, such as item i, item 2 or item 17 in the scope of the patent application, wherein the predetermined distribution pattern includes a plurality of particles having a cylindrical shape on the negative side. 26. The light emitting diode method with a bonding layer such as item i, item 2 or item 17 in the scope of the patent application, wherein the predetermined distribution pattern includes a plurality of particles having a substantially circular arc surface. 27. The light-emitting diode system with a bonding layer as described in item 17 of the scope of the patent application, wherein the first binding layer comprises A 1 Gal nP. 28. The light-emitting diode system with a bonding layer as described in item 17 of the scope of patent application, wherein the light-emitting layer comprises A 1 Gal nP. 29. The light-emitting diode system with a bonding layer as described in item 17 of the scope of the patent application, wherein the second binding layer comprises A 1 Gal nP. 3 〇 The light-emitting-electrode system with a bonding layer as described in item 17 of the scope of the patent application, wherein the second contact layer comprises a material selected from the group consisting of GaP, GaAs, Page 18 543211 __Case No. 91115511_ Year Cr _ VI. Scope of patent application At least one of the materials in the group of materials composed of GaAsP, InGaP, AlGaInP or AlGaAs. 3 1 · The light emitting diode system with a bonding layer as described in item 17 of the scope of patent application, which may include a transparent conductive layer formed on the second contact layer and under the second wiring electrode. 3 2 · The light emitting diode method with a bonding layer as described in item 31 of the scope of patent application, wherein the transparent conductive layer comprises a material selected from the group consisting of indium tin oxide, oxidized tin oxide, antimony tin oxide, zinc oxide, and oxide One of the materials in the group consisting of zinc tin, GeAu, BeAu, or Ni / Au. Page 19