TW540171B - Manufacturing method of high-power light emitting diode - Google Patents
Manufacturing method of high-power light emitting diode Download PDFInfo
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- TW540171B TW540171B TW91116005A TW91116005A TW540171B TW 540171 B TW540171 B TW 540171B TW 91116005 A TW91116005 A TW 91116005A TW 91116005 A TW91116005 A TW 91116005A TW 540171 B TW540171 B TW 540171B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 229910052751 metal Inorganic materials 0.000 claims abstract description 38
- 239000002184 metal Substances 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 26
- 238000009713 electroplating Methods 0.000 claims abstract description 4
- 239000010931 gold Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 abstract description 9
- 230000031700 light absorption Effects 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 18
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 13
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 9
- 229910052733 gallium Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 238000005253 cladding Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 2
- 230000003340 mental effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 gallium halide Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
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Abstract
Description
540171 五、發明說明（1) 【發明背景】540171 V. Description of the invention (1) [Background of the invention]
目前高亮度或高功率發光二極體，主要以A 1 G a A s紅外 線及紅色發光二極體，A 1 G a I η P紅色，橘色，黃色及黃綠 色發光二極體，以及AlGaln N藍色及綠色發光二極體為 主。AlGaAs及AlGalnP發光二極體是使用GaAs來當作基 板’由於G a A s基板會吸收光’因此，有一半以上發光層所 產生的光，都被G a A s基板所吸收。為了改善發光二極體的 發光效率，在AlGaAs發光二極體方面，如美國專利5，185 2 8 8號所揭示’成長一非常厚’且能帶（Energy Bandgap) 大於發光層的A 1 G a A s蠢晶層，來當作透光基板，然後將吸 光的GaAs基板移除，而避免了基板吸光的問題，並大幅的 改善了發光二極體的發光效率，但此一方法，由於必須成 長一非常厚的A 1 G a A s透光基板，成長時間長，生長成本較 高，且由於AlGaAs與GaAs材料的晶格常數與熱膨脹係數不 同，因此成長完的蠢晶片，會有很嚴重彎曲變形，而使得 後續的，晶粒製造較困難。此外，A 1 G a A s基板如同G a A s基 板一樣，散熱性不佳，因此，也不適合在高電流下操作。 t 在AlGalr^發光二極體方面，美國專利第5, 3 7 6, 5 8 〇號 揭示了另一種直接以晶片結合（direct wafer bonding)方 式，形成透明基板的方法，但此一方法是先移除不透光的 石申化鎵基板，然後再將A 1 G a I η P發光二極體蠢晶層，以晶 片結合的方式，黏著在另一透光的GaP基板上，由於 A 1 Ga I nP發光二極體磊晶層，在不透光的砷化鎵基板移除 後；厚度只有50微米（// m)厚左右，因此很容易在晶片結合At present, high brightness or high power light emitting diodes are mainly A 1 G a A s infrared and red light emitting diodes, A 1 G a I η P red, orange, yellow and yellow green light emitting diodes, and AlGaln N blue and green light emitting diodes are mainly used. The AlGaAs and AlGalnP light-emitting diodes use GaAs as a substrate. 'Because the GaAs substrate absorbs light', more than half of the light generated by the light-emitting layer is absorbed by the GaAs substrate. In order to improve the light emitting efficiency of the light emitting diode, as for the AlGaAs light emitting diode, as disclosed in US Pat. No. 5,185 2 88, the “growth is very thick” and the energy band (Energy Bandgap) is greater than A 1 G of the light emitting layer. a A s stupid crystal layer is used as a light-transmitting substrate, and then the light-absorbing GaAs substrate is removed, thereby avoiding the problem of light absorption by the substrate, and greatly improving the light-emitting efficiency of the light-emitting diode. A very thick A 1 G a A s light-transmitting substrate must be grown. The growth time is long and the growth cost is high. And because the lattice constants and thermal expansion coefficients of AlGaAs and GaAs materials are different, the finished silly wafers will have very Severe bending deformation makes subsequent fabrication of the crystal grains more difficult. In addition, the A 1 G a A s substrate, like the G a A s substrate, has poor heat dissipation and is therefore not suitable for operation at high currents. In terms of AlGalr ^ light-emitting diodes, U.S. Patent No. 5, 3 7 6, 5 8 0 discloses another method of directly forming a transparent substrate by direct wafer bonding, but this method is first Remove the light-transmissive gallium substrate, and then attach the A 1 G a I η P light-emitting diode stupid layer to the other light-transmitting GaP substrate by wafer bonding. Ga I nP light-emitting diode epitaxial layer, after the opaque gallium arsenide substrate is removed; the thickness is only about 50 microns (// m), so it is easy to bond on the wafer
第4頁 540171 五、發明說明（2) 的過程中破掉，生產良率也會大受影響，此外，GaP基板 的散熱特性，雖較G a A s基板稍好，但比起金屬，如：A 1或 Cu仍然差很多，因此，利用此方法所製造的發光二極體， 仍無法在高電流下操作。Page 4 540171 V. Description of the invention (2) If it is broken during the process, the production yield will also be greatly affected. In addition, the heat dissipation characteristics of GaP substrates are slightly better than G a A s substrates, but they are better than metals, such as : A 1 or Cu is still much worse. Therefore, the light-emitting diode manufactured by this method still cannot operate at high current.
美國專利第6, 319, 778 B1號揭示了一種製造發光二極 體的方法，避免發光被一基板吸收，可藉由使用一具高導 電度與高反射係數的金屬，且結合過程（b〇nding process)係處於低溫狀態，且一更好的焊接效果，可藉由 使用一焊料層（solder layer)以液態融入達到，更進一步 地，一工業標準垂直發光二極體晶片結構係提供，且僅需 一單一打線結合，其結果是發光二極體組裝容易，製造成 本降低，一發光二極體晶片尺寸可被大幅降低，且具良好 熱發散特性，因此，該發光二極體有更好的可靠度效能， 且能於更高電流下操作。 在A IGaInN發光二極體方面，美國專利申請公告第 2001/0，042，86 6號揭示了 一種利用金屬結合（MentalU.S. Patent No. 6,319,778 B1 discloses a method for manufacturing a light-emitting diode, which prevents light from being absorbed by a substrate, and can use a metal having high conductivity and high reflection coefficient, and a combination process (b. The nding process) is at a low temperature, and a better soldering effect can be achieved by using a solder layer in a liquid state. Furthermore, an industry standard vertical light emitting diode wafer structure is provided, and Only a single wire bonding is required. As a result, the light-emitting diode is easy to assemble, the manufacturing cost is reduced, the size of a light-emitting diode chip can be greatly reduced, and it has good thermal dissipation characteristics. Therefore, the light-emitting diode has better performance. Reliability performance, and can operate at higher currents. With regard to A IGaInN light-emitting diodes, U.S. Patent Application Publication No. 2001 / 0,042,86 6 discloses a method of utilizing metal bonding (Mental
Bonding)的方式，來形成高亮度發光二極體的方法，其利 用一金屬反射層，來反射發光層所產！的光，而避免了基 板吸光的問題，且利用金屬黏結層（mental bonding 1 ay e r )，將發光二極體磊晶層黏著到一散熱性良好的基 板，如··矽（S i )，及金屬基板上，而大幅改善了發光二極 體的散熱特性，但此一方法如要生產良率高，則必須待結 合的發光二極體磊晶片，及散·熱性良好的基板，二者的表 面都非常平整，但通常發光二極體磊晶片表面，常會有突Bonding) method to form a high-brightness light-emitting diode, which uses a metal reflective layer to reflect the light-emitting layer! Light, avoiding the problem of light absorption by the substrate, and using a metal bonding layer (mental bonding 1 ayer) to adhere the light-emitting diode epitaxial layer to a substrate with good heat dissipation, such as silicon (Si), And metal substrates, which greatly improves the heat dissipation characteristics of light-emitting diodes. However, if this method is to produce high yields, it is necessary to combine light-emitting diode wafers and substrates with good heat dissipation and dissipation. The surface is very flat, but usually the surface of the light-emitting diode chip often has a sudden
第5頁 540171 五、發明說明（3) 出物七 曰 取粒子在表面，且磊晶片常常是彎曲的，因此，使得 晶片結合較困難。 本發明便是為了解決基板吸光，改善發光二極體的散 ,、 ’以及發光二極體蠢晶片表面不平整，或彎曲的情 形下’也可以將發光二極體磊晶片，由熱傳導性差的基 才反’轉換到導熱性佳的金屬基板。 【發明概要】 本發明係關於一種高功率發光二極體製造方法。該發 光二極體具有金屬反射層，及以電鍍方法形成金屬基板。 本發明由於採用了金屬反射層，因此，可以避免基板吸光 的問題’發光亮度也可以顯著的提昇，且可以形成一 p，N 電極分別在發光二極體上下二側的垂直結構，又由於將半 導體基板轉換成金屬基板，也大幅地改善了發光二極體的 散熱特性，使得發光二極體可以在較高的電流下操作。 【發明詳細說明】 本發明更詳細的解說如后： 第一實施例：砷化鋁鎵紅色發光二極體。 為了降低成本，可以使用目前市售的，以液相磊晶法 成長的6 6 0微米（μ m)砷化鋁鎵（A1G a As)雙異質結構 (double heterostructure，DH)紅色發光二極體磊晶 片，於第一圖顯示，其結構是.在一 p型砷化鎵（GaAs)基板 38上，分別成長一 P型砷化鋁鎵下限制層（1〇wer cUddingPage 5 540171 V. Description of the invention (3) Product 7: Take the particles on the surface, and the wafer is often curved, so it makes the wafer bonding more difficult. The present invention is to solve the problem of light absorption of the substrate and improve the dispersion of the light-emitting diode, and "the surface of the light-emitting diode is not flat or curved," the light-emitting diode can also be used to reduce the light-conductivity The substrate is reversely converted to a metal substrate with good thermal conductivity. [Summary of the Invention] The present invention relates to a method for manufacturing a high-power light-emitting diode. The light emitting diode has a metal reflective layer and a metal substrate is formed by a plating method. Because the present invention uses a metal reflective layer, the problem of light absorption by the substrate can be avoided. The luminous brightness can also be significantly improved, and a vertical structure with p, N electrodes on the upper and lower sides of the light emitting diode can be formed. The conversion of the semiconductor substrate into a metal substrate also greatly improves the heat dissipation characteristics of the light emitting diode, so that the light emitting diode can operate at a higher current. [Detailed description of the invention] A more detailed explanation of the present invention is as follows: The first embodiment: an aluminum gallium arsenide red light emitting diode. In order to reduce the cost, a commercially available 660 micron (A1G a As) double heterostructure (DH) red light emitting diode grown by liquid phase epitaxy can be used. Lei wafer, shown in the first figure, its structure is. On a p-type gallium arsenide (GaAs) substrate 38, a P-type aluminum gallium arsenide lower confinement layer (10wer cUdding) is grown.
540171 五、發明說明（4) layer) 36，鋁含量約在70〜80%，一 p型的砷化鋁鎵活性層 (active layer ) 34,鋁含量約在35%，及一 _的砷化鋁曰錄 上限制層（upper cladding layer)32;接著在N型砷化鋁= 上限制層（upper cladding layer)32的部份區域，鍍上歐 姆接觸金屬40，由於歐姆接觸金屬4〇會吸收光線，因此其^ 面積不宜太大，以免遮光區域太大，但歐姆接觸金屬4〇面 積又不宜太小，而導致接觸電阻過大。然後，鍍上一屛 屬光反射層28,來反射活性層（active layer)34所產 光線，避免被隨後鍍上的金屬基板層26所吸收，該金籴 反射層28的反射率最好大於8〇%以上，才能有效的反射先 性層34所產生的光，銀，鋁，金，由於在可見光具有 反射率，所以是金屬光反射層28材料的最佳選擇，為游 反應，而降“光。V化域上限甘制32之間有任何 礙(im —二二丄、在其間鍍上一層擴散障 高溫金層，如，Γ ): °，該擴散障礙層3°可以選擇 IT〇, z爾材料(Mo)，或透明導電層’如， 厚度不能太厚否散障礙層3°選擇高溫金層，則 方式鍍上一層較厚的金屬， 包鍍 基板層26主要的目的，：田卜作f屬基板’ 26，該金屬 體所產生㈣，因此，其材料ϊγ 佳選擇要…熱係數的材料為主，如，銘，鋼便是最 第一圖為本發明砷化鋁鎵（AlGaAs)發光二極體磊晶片540171 V. Description of the invention (4) layer) 36, aluminum content is about 70 ~ 80%, a p-type aluminum gallium arsenide active layer 34, aluminum content is about 35%, and Aluminum is recorded on the upper cladding layer 32; then in a part of the N-type aluminum arsenide = upper cladding layer 32, an ohmic contact metal 40 is plated, because the ohmic contact metal 40 will absorb Light, so its area should not be too large, so as to avoid too large a light-shielding area, but the area of the ohmic contact metal 40 should not be too small, resulting in excessive contact resistance. Then, a metal light reflection layer 28 is plated to reflect the light produced by the active layer 34 to avoid being absorbed by the metal substrate layer 26 that is subsequently plated. The reflectivity of the gold light reflection layer 28 is preferably greater than Only 80% or more can effectively reflect the light, silver, aluminum, and gold produced by the antecedent layer 34. Because of the reflectance in visible light, it is the best choice for the material of the metal light reflection layer 28. "Light. There are no obstacles between the upper limit of the V-domain and the system 32 (im-22), and a high-temperature gold layer of a diffusion barrier is plated therebetween, for example, Γ: °, and the diffusion barrier layer 3 ° can choose IT. Material (Mo), or a transparent conductive layer, such as, the thickness should not be too thick, or the barrier layer should be 3 °. Choose a high-temperature gold layer, then the method is plated with a thicker metal. The main purpose of coating the substrate layer 26 is: Tian Bu's f belongs to the substrate '26. Therefore, the material ㈣ γ is the best choice. The material with the thermal coefficient is mainly, for example, Ming, steel is the first picture. (AlGaAs) light emitting diode epitaxial wafer
第7頁 540171 五、發明說明（5) 將P型砷化鎵基板移除後的構造圖。 鑛完金屬基板層2 6後’接著以钱刻方式，如濕式姓刻 法或乾式蝕刻法，將p型砷化鎵基板3 8移除，然後p型砷化 鋁嫁下限制層3 6的部份區域鍵上P型歐姆接觸金屬4 2，最 後再以切割機，將磊晶片切割成晶粒，便形成一 P，N電極 分別在發光二極體上下二側，垂直結構，且沒有基板吸收 光線的問題，並具有良好散熱特性的發光二極體晶粒。Page 7 540171 V. Description of the invention (5) Structural diagram after removing the P-type gallium arsenide substrate. After the metal substrate layer 26 has been mined, the p-type gallium arsenide substrate 3 8 is removed by money engraving, such as a wet type engraving method or a dry etching method, and then the p-type aluminum arsenide is married with a limiting layer 3 6 Part of the area key on the P-type ohmic contact metal 4 2 and finally cut the epitaxial wafer with a cutter to form a P, N electrode on the upper and lower sides of the light emitting diode, vertical structure, and no Light-emitting diode grains with substrates that absorb light and have good heat dissipation characteristics.
習知的市場上販售6 6 0奈米（n m )石申化铭鎵（G a A 1 A s )雙 異質結構，紅色發光二極體磊晶片，由於表面有波浪狀 (ripple)或梯田狀（terrace)的條紋，且磊晶片彎曲得非 常厲害’因此，很難以習知的技術，如，直接晶片結合 (Direct wafer bonding)或金屬結合（mentai bonding)的 技蟄’將此一發光二極體磊晶片，黏著至一具高導熱係數 的基板’本發明採用電鍍的方式，來形成散熱性佳的金屬 基板’便解決了先前技藝無法結合一彎曲或具不平整表面 蠢晶片之問題。660 nanometer (nm) Shi Shenhua gallium (G a A 1 As s) double heterostructure, red light-emitting diode epitope wafers are sold on the conventional market, because the surface has a ripple or terraced shape ( terrace), and the wafer is very sharply bent. Therefore, it is difficult to use a conventional technique, such as direct wafer bonding or metal bonding technology, to illuminate this light-emitting diode. Lei wafers are adhered to a substrate with a high thermal conductivity. The present invention uses electroplating to form a metal substrate with good heat dissipation. This solves the problem that the prior art cannot combine a wafer with a curved or uneven surface.
雖然文中已應用較佳實施例說明本發明，但嫺熟本技 術者需了解可對上述實施例加以更改及變更，而不偏離本 發明的精神及觀點。以上所述僅為本發明之較佳具體實施 例，凡依本發明申請專利範圍所做之均等變化及修飾，皆 應屬本發明申請專利之涵蓋範圍。Although the preferred embodiments have been used to describe the present invention, those skilled in the art need to understand that the above embodiments can be modified and changed without departing from the spirit and perspective of the present invention. The above description is only a preferred embodiment of the present invention. Any equivalent changes and modifications made in accordance with the scope of the patent application of the present invention shall fall within the scope of the patent application of the present invention.
第8頁 540171 圖式簡單說明 【圖式簡單說明】 第一圖為本發明砷化鋁鎵（AlGaAs)發光二極體磊晶片構造 圖。 第二圖為本發明砷化鋁鎵（AlGaAs)發光二極體磊晶片將P 型砷化鎵基板移除後的構造圖。Page 8 540171 Brief description of the drawings [Simplified description of the drawings] The first diagram is a structural diagram of an aluminum gallium arsenide (AlGaAs) light emitting diode wafer according to the present invention. The second figure is a structural diagram of an aluminum gallium arsenide (AlGaAs) light emitting diode wafer after removing a P-type gallium arsenide substrate.
【圖式編號說明】 26 以電鍍方式形成的金屬基板層 28 金屬光反射層 30 擴散障礙層 32 N型砷化鋁鎵上限制層 (upper cladding layer) 34 P型珅化紹鎵活性層 36 P型砷化鋁鎵下限制層 (lower cladding layer) 38 p型珅化鎵基板 40 歐姆接觸金屬 42 歐姆接觸金層[Illustration of drawing number] 26 Metal substrate layer 28 formed by electroplating 28 Metal light reflection layer 30 Diffusion barrier layer 32 N-type aluminum gallium arsenide upper cladding layer 34 P-type gallium-based gallium active layer 36 P Lower cladding layer of aluminum gallium arsenide 38 p-type gallium halide substrate 40 ohm contact metal 42 ohm contact gold layer
第9頁Page 9
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| TW91116005A TW540171B (en) | 2002-07-18 | 2002-07-18 | Manufacturing method of high-power light emitting diode |
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| TW91116005A TW540171B (en) | 2002-07-18 | 2002-07-18 | Manufacturing method of high-power light emitting diode |
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| TW540171B true TW540171B (en) | 2003-07-01 |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7763477B2 (en) | 2004-03-15 | 2010-07-27 | Tinggi Technologies Pte Limited | Fabrication of semiconductor devices |
| US8004001B2 (en) | 2005-09-29 | 2011-08-23 | Tinggi Technologies Private Limited | Fabrication of semiconductor devices for light emission |
| US8034643B2 (en) | 2003-09-19 | 2011-10-11 | Tinggi Technologies Private Limited | Method for fabrication of a semiconductor device |
| US8067269B2 (en) | 2005-10-19 | 2011-11-29 | Tinggi Technologies Private Limted | Method for fabricating at least one transistor |
| US8124994B2 (en) | 2006-09-04 | 2012-02-28 | Tinggi Technologies Private Limited | Electrical current distribution in light emitting devices |
| US8309377B2 (en) | 2004-04-07 | 2012-11-13 | Tinggi Technologies Private Limited | Fabrication of reflective layer on semiconductor light emitting devices |
| US8329556B2 (en) | 2005-12-20 | 2012-12-11 | Tinggi Technologies Private Limited | Localized annealing during semiconductor device fabrication |
| US8395167B2 (en) | 2006-08-16 | 2013-03-12 | Tinggi Technologies Private Limited | External light efficiency of light emitting diodes |
| US8664087B2 (en) | 2010-12-02 | 2014-03-04 | Epistar Corporation | Method of manufacturing a semiconductor structure and separating the semiconductor from a substrate |
| US8999019B2 (en) | 2005-10-21 | 2015-04-07 | Taylor Biomass Energy, Llc | Process and system for gasification with in-situ tar removal |
-
2002
- 2002-07-18 TW TW91116005A patent/TW540171B/en not_active IP Right Cessation
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8034643B2 (en) | 2003-09-19 | 2011-10-11 | Tinggi Technologies Private Limited | Method for fabrication of a semiconductor device |
| US7763477B2 (en) | 2004-03-15 | 2010-07-27 | Tinggi Technologies Pte Limited | Fabrication of semiconductor devices |
| US8309377B2 (en) | 2004-04-07 | 2012-11-13 | Tinggi Technologies Private Limited | Fabrication of reflective layer on semiconductor light emitting devices |
| US8004001B2 (en) | 2005-09-29 | 2011-08-23 | Tinggi Technologies Private Limited | Fabrication of semiconductor devices for light emission |
| US8067269B2 (en) | 2005-10-19 | 2011-11-29 | Tinggi Technologies Private Limted | Method for fabricating at least one transistor |
| US8999019B2 (en) | 2005-10-21 | 2015-04-07 | Taylor Biomass Energy, Llc | Process and system for gasification with in-situ tar removal |
| US8329556B2 (en) | 2005-12-20 | 2012-12-11 | Tinggi Technologies Private Limited | Localized annealing during semiconductor device fabrication |
| US8395167B2 (en) | 2006-08-16 | 2013-03-12 | Tinggi Technologies Private Limited | External light efficiency of light emitting diodes |
| US8124994B2 (en) | 2006-09-04 | 2012-02-28 | Tinggi Technologies Private Limited | Electrical current distribution in light emitting devices |
| US8664087B2 (en) | 2010-12-02 | 2014-03-04 | Epistar Corporation | Method of manufacturing a semiconductor structure and separating the semiconductor from a substrate |
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