TW528651B - Apparatus and methods for controlling retaining ring and wafer head tilt for chemical mechanical polishing - Google Patents

Abstract

A CMP system and methods make repeatable measurements of eccentric forces applied to carriers for wafer or polishing pad conditioning pucks. Force applied to the carrier may be accurately measured even though such force is eccentrically applied to such carrier. The CMP system and method provide the repeatable measurement features while supplying fluids within the carrier to the wafer and to a wafer support without interfering with the polishing operations. Similarly, the CMP system and methods remove fluids from the wafer or puck carrier without interfering with the CMP operations. An initial coaxial relationship between an axis of rotation and a carrier axis is maintained during application of the eccentric force, such that a sensor is enabled to make repeatable measurements, as defined above, of the eccentric forces, and the carrier may be a wafer or a puck carrier. Such initial coaxial relationship is maintained by a linear bearing assembly mounted between the carrier and the sensor, and the carrier may be a wafer or a puck carrier. The linear bearing assembly is provided as an array of separate linear bearing assemblies, wherein each separate linear bearing assembly is dimensioned independently of the diameter, for example, of a wafer or puck carried by the carrier. The linear bearing assembly may be assembled with a retainer ring in conjunction with a motor for moving the ring relative to the wafer mounted on the carrier so that an exposed surface of the wafer and a surface of the retainer ring to be engaged by the polishing pad are coplanar during the polishing operation.

Description

528651, there is a need, for example, Code Disc. In order to clarify and include the plane junction device system layer, the planarization of the conductive layer with the ideal function of the interconnect metal is assembled. As a result, it is used in chemical mechanical polishing (CMP) systems and technologies to improve CMP operation. The present invention relates to a puck for wafers, in which reproducibility is provided to the power of the head, which has a wafer force response and tilts, but enables the head to be crystallized and is also used for CMP. Operating facilities, such as liquid self, carrier head used for CMP operation V. Description of the invention (1) Field of the invention The present invention relates generally to the performance and effects of mechanical polishing. It is clear that the body head and pad adjust the elastic disk. The main axis of the measuring head resists the deviation, and the elastic disk head is not eccentric. The circular axis moves in parallel. The present invention is for supplying liquids to and removing facilities without interfering with CMP operations. ≪ Description of related arts. Grinding, polishing, and wafer cleaning in semiconductor manufacturing. The word "wafer" for a diameter of 200mm or 300mm is used to support electrical or electronic circuits. Typically, integrated circuits are on such wafers. Formed on wafer. In the following layers, the conductive layer connected to the transistor device to define the composition pattern and its accompanying dielectric layer are formed, planarized, and the formation of more metallized layers is more difficult. Other CMP operations, including research wafers, can be made from silicon, which is convenient for explanation. In the following, such semiconductor wafers and other structures, or substrates. The transistor device assembled in the expanded area in the form of a layered structure is patterned and the circuit is connected to the device. It is insulated by a dielectric material. As more metallized layers are needed, the need for electrical materials increases. The unevenness of the surface shape changes a lot.

Page 7 528651 V. Description of the invention (2) In the dielectric material, a metal CMP operation is then performed to remove excess metallization. In prior art, CMP systems typically provided a belt, track, or brush station in which a belt, pad, or brush was used to scrub, polish, and polish one or both sides of the wafer. Depending on the type of CMP operation being performed, certain substances, such as mud, are used to assist and increase the CMP operation. For example, mud is most commonly introduced onto a moving preparation surface, such as a belt, pad, brush, and the like, and distributed on the preparation surface as well as on the surface of a semiconductor wafer subjected to polishing, grinding, or other CMP processes. The distribution is usually achieved by a combination of movement of the preparation surface, movement of the semiconductor wafer, and friction generated between the semiconductor wafer and the preparation surface. In a typical CMP system, a wafer is fixed on a carrier and the surface of the wafer is exposed. The carrier and the wafer are rotated in a rotation direction. The CMP process element can be formed, for example, when the exposed surface of the rotating wafer and the abrasive liner are pushed toward each other with a force, and when the exposed surface and the abrasive liner are moved or rotated in the direction of the abrasive pad. Some CMP processes require significant force when the rotating wafer is ground by the abrasive pad. Normally, abrasive pads used in CMP systems consist of porous or fibrous materials. However, in some CMP systems, the abrasive pad may contain solid abrasive particles throughout its surface. Depending on the type of polishing pad used, the slurry can be composed of an aqueous solution such as Nh40h, or DI water containing dispersed abrasive = particles can be applied to the polishing pad. Abrasive chemical solutions are produced in between. Several problems may be encountered when using a typical CMP system. One by one

Page 8 528651 V. Description of the invention (3) ------, The problem is called "edge effect", which is caused when the CMP system grinds the edge of the wafer at different rates in the other areas of the μ circle. The feature of edge f has an uneven appearance on the exposed surface of the wafer. Along with marginal responses, questions can be divided into two different categories. The first category relates to the so-called lining = springback effect, which originates from the contact between the polishing pad and the edge of the wafer. When the polishing pad comes into contact with the edge of the wafer at the beginning, the pad bounces back (or bounces) the edge, so the pad can be assumed to be wavy. The wavy shape can produce an uneven appearance on the exposed surface of the wafer. The second type is the "burn out" effect. The burn-out effect occurs when the larger edge of the wafer is in contact with the surface of the polishing pad and the sharper edge of the wafer is extremely: ground. This occurs because the pad surface exerts a force on the contact area of the very small = round exposed surface (defined as the edge contact area), and considerable pressure is applied to the edge of the wafer. As a result of the burn-off effect, the edges of the polished wafer are burnt and the edge region cannot be assembled with a silicon device. Another disadvantage of the conventional CMP system is that it cannot lift the surface of the wafer along the ideal final trimming layer. In general, the exposed surfaces of wafers that have undergone certain groups of PEI tend to have different thicknesses in the central region and change to the thickness of the edges. In a typical conventional CMP system, the pad surface covers the entire exposed surface of the wafer. Such a pad surface is designed to apply force to a portion of the exposed surface of the wafer called a "last trim layer". As a result, the area of all the final trimming layers is ground until the final trimming layer becomes substantially flat. Therefore, the surface of the gasket is ground in spite of the wavy shape of the final finishing layer, thereby causing the thickness of the final finishing layer to be non-uniform. Some circuit assembly applications

Page 9 528651 *

Maintain a stack of material thickness to build an effective device. Example U The final trimming layer is a dielectric layer, which will require a certain thickness in order to define the wires and conductive channels. ▲ These problems of previous CMP operations, and in the CMP technology, the precise and controlled grinding of the specially aligned wafer surface area is substantially eliminated, and the damage edge effect, pad springback effect, and edge are substantially eliminated. The unresolved needs of welding collision ^ μ are discussed in the relevant national patent application dated August 20, ^ f. Application No. G9 / 644, 1 35 "Sub-opening chemical mechanical research" ,,,, and Assigned to the assignee of this application ("Related Application"). The description, patent application scope, and drawings of the related application of Dagger are incorporated into this application in a form. In this related application, the CMP system is topographically layered along the exposed surface of the wafer in order to produce a CMP processed layer surface and surface with uniform thickness everywhere. Such a CMP system provides a rotating carrier with a sub-opening grinding structure to eliminate the above disadvantages (edge effect, pad spring-back effect, and edge burn-off effect). For example, one embodiment of such a CMP system includes a carrier having an upper surface and a bottom surface. The upper surface of the carrier is designed to fix and rotate a wafer to be prepared having one or more layers. Also included is a preparation head, a polishing head, designed to be used on at least a portion of the wafer, where this is less than the entire portion of the wafer surface. Although such a CMP system avoids the above-mentioned ^ edge effect, pad springback effect, and edge burn-off effect, such a preparation head = applying a force in this way to the exposed surface of the wafer and to the carrier relative to the wafer and the carrier Offset position of the starting bearing. The starting orientation includes the starting orientation of the central axis of the wafer and the carrier (which is coaxial and roughly vertical

528651 V. Description of invention (5) Straight). The starting orientation also includes the starting angle of the exposed surface of the wafer, which is located at about 22 ° from the center axis of the wafer and the carrier. The term "substantially vertical" means actual verticality, which is inclusive of nine :: international vertical plus or minus normal mechanical tolerances that are perpendicular to the actual vertical tolerances used in the bearings of the mandrel and other supports of such a carrier Furthermore, the edge effect, pad spring-back effect, and ϋ = 1 should not be expected to cause wafers and carriers due to the eccentric force: the central axis leaves the initial orientation and tilt, or is inclined under the effect of eccentric force. Direction. Such a tilted or tilted orientation occurs when the central axis of the wafer and / or the body leaves the actual vertical and exceeds the above-mentioned normal combat tolerance with respect to the actual vertical, such as more than a few degrees. For example, in the prior art, Balance 2 was used to present a wafer to a carrier 2 support for a preparation head, such as a head with a polishing pad. The gimbal causes the wafer carrier (and the wafer mounted thereon) to tilt and assume such a tilted orientation relative to the center axis of the wafer and the carrier. As mentioned above, such an inclination makes the exposed surface of the wafer a non-substantial vertical angle, such as about 85 to 88 degrees from the horizontal, which significantly deviates from the above-mentioned starting orientation. Therefore, due to the resulting tilt, the exposed surface of the wafer is not perpendicular to the initial orientation of such a central axis of the wafer and the carrier. When the mill profile has an area approximately the same as the area of the exposed surface of the wafer and the area area of the wafer covers the area of the exposed surface of the wafer, the tilt caused by such balanced production may be appropriate. However, in the above-mentioned eccentricity case (that is, when the area of the polishing pad, for example, does not completely cover the area of the exposed surface of the wafer), such a balance ring may not be used. In detail, the initial orientation of the wafer and the center axis of the wafer carrier is such an eccentric force.

528651 V. Description of the invention (6) ί :: The orientation must be held in order to reach the surface of the exposed surface of the wafer. In order to reach 0, the rational phase of the exposed surface of the wafer is caused by such a balance ring. tilt. In the Chinese Patent No. 4,244,755, the conductor is provided with a grinding plate having a diameter of half to be processed and a diameter of 2 = t. Put the main body on the vehicle to show the main body; in the support platform. As a result, the movement of the main body and the supporting table to the grinding plate always presents the entire surface diameter of the main body. The second and fifth supporting tables surrounding the main body must have a larger diameter. Therefore, the second and the second, if the semiconductor main body is an eight-inch-diameter wafer. Diameter) should be; * In the example of Yang Eryuan ^, the length of the collar (which is usually twice as long as the result ^, ~, about ten $ six centimeters), so the diameter of the collar relative to the semiconductor body structure. The length of% is directly related to the large size of the semiconductor body to be processed. It may also be a variable factor. The friction loss between the shaft sleeve and the support table has a flat metal, which is directly on the wafer. Place the lining; the carrier of == 2 provides many holes to penetrate the metal force, and provides the wafer's existence indication to change the hole's internal pressure of the tube + from the ancient a Liwan style. However, the wear and tear through this hole: 1ΐ f crystal ί shape and obstruct the wafer plug or multiple holes on the metal lining, causing the mud in the wafer operation may block the other-type wafer carrier provides ceramic = indication. 5 microns to- Micron pores. About this second layer: on the carrier. This layer has a clear indication of ^^^ so small

528651 V. Description of the invention (7) = The pores of meter size can be easily blocked and difficult to clean. Generally speaking, for example, the carrier is cleaned by spraying a fluid onto the wafer placement on the top of the carrier. * This, even if it is resistive, very small micron-sized pores are in the layer, and this spray is applied externally to this ceramic magnetic layer. At the same time, in another type of polishing system, for example, the wafer to be polished * the exposed surface faces downward and may be horizontal. In this type of system, the slurry to be ground may flow more easily, or it may be removed from the exposed surface and the carrier in one piece. As a result, this type of system does not have the problem of removing mud from the surface exposed from the top.

-Another problem in providing a preparation head (such as a wafer polishing head) is that it may be used to carry a specific wafer during many different processing steps (such as circular grinding and polishing). Here, the carrier connected to the wafer is first set in a processing station and processed. When the first processing is completed, the carrier is removed 'from the station with the last name, transferred to the second station, and installed at the second processing station, and so on. As a result, there are now significant requirements for very small carriers that can be universally used in many types of processing stations. Therefore, a critical CMP system and method in which a force is applied to a carrier, such as a wafer or a spring disk carrier, can be accurately measured even if the force is applied eccentrically to the carrier. Specifically, there is an unmet need today to provide an accurate indication of the magnitude of this eccentricity. This precise indication is a reproducible measurement technique that can be described as "iso-eccentricity". These eccentric forces are eccentric forces having the same values as those applied to the wafer adjustment spring disk by a pad (such as a polishing pad). This reproducible measuring pad For all these eccentric forces, within the measuring system and on the system supporting the carrier

Page 13 528651 V. Description of the invention (8) The force lost in (8) will be approximately the same and can be reproduced. Two: CMP system and method with reproducible measurement characteristics required above, and / or equipment for other CMP operations, such as equipment for supplying fluid circles in the carrier, and wafer support without hindering the grinding operation . Class: Ground. Second, a CMP system and method that uses a carrier from a CMP operation to remove fluid without interfering with the CMP operation. [Summary of the invention] Take control [5]. The present invention satisfies these existing measurement structures by providing CMP instructions, methods, and methods to solve the above-mentioned problems and solutions: it can reach the carrier with an eccentric force. * Wafer or elastic load can be applied to another carrier. The system and method of the present invention, and the CMP system that simultaneously provides the three required reproducible measurement characteristics, may also provide fluid to the wafer and the wafer support method of the second method: like the soil. This system and the CMP that interferes with the CMP operation are to remove the fluid with the = or elastic disk carrier. Maybe the door of the rotating shaft and the carrier shaft during the system of the present invention and the square, and M _ ^ ^ ::: in the column ' Can an eccentric shaft be used for an eccentric force? 'Maintain that makes the wafer or flex disc carrier. (Defined on σ), the carrier may be between the system of the present invention and the carrier and the sensor. In another embodiment, # the initial coaxial relationship is maintained by the linear bearing assembly installed at,

528651 V. Description of the invention (9) The plant body can provide the wire bearing assembly for the crystal bearing assembly. The size of the wire bearing assembly is provided in the bearing assembly regardless of the size. The present invention cleans a protruding part of the invention by using the same duct through a vacuum chuck cleaning liquid in the same way as the invention. The elastic disk of the invention has a large fluid distribution. It is provided by the Mingming system and the phased array, and its power is the brighter system and the buckle ring. The wafer is supplied to the system and the square system during the storm, and the large micron system and square wafer can be passed. The carrier is cleaned. System and method, in which a linear shaft body carrying method that spans the impeachment system and the square disk carrier method is assembled for the application of the method of applying ground to the load, the exposed surface is coplanar, and the vacuum is easy and small. The other with the carrier mud. Another embodiment of the method extends the force plate. In another embodiment, the linear bearing assembly is arrayed, each of which is separate, for example, the wafer or the elastic disk is straight. In another embodiment, the linear axis is The separate ring connected by the body moving the buckle and the eccentric force to the buckle are accurately measured to this ring. In a related embodiment, a linear bearing set is used to move the ring relative to the buckle ring mounted on the carrier and occupied by the abrasive pad. One embodiment provides a vacuum chuck, which is subjected to a cleaning liquid, wherein the vacuum is evenly penetrated. It is applied to the wafer through a hole fed through the same catheter system. The embodiment of the surplus provides a channel connection suspended from the carrier to guide the cleaning liquid along one embodiment. The embodiment provides a perforated plate made through the surface to support the elastic disk and purify the elastic disk. Another embodiment provides

528651 V. Description of the elastic disk support, in which all the perforations are used to fill the lip storage where the elastic disk with perforation is stored. The elastic disk support is configured to distribute fluid to 0. Detailed Description of Best Specific Examples] An invention that enables precise control of the polishing of the surface of a wafer (which may include a layered surface). This cmp system substantially eliminates the aforementioned edge effects, pad spring-back effects, and edge sound = effects, and provides the structure to help make the measurement of eccentric force visible. In this CMP system and method, the force applied to the carrier (such as the seventh and present carriers) can be accurately measured, as described in the above description, and no force can be applied to this carrier. The CMP system and method have eccentricity characteristics, and at the same time, provide equipment for supplying fluid to the wafer in the carrier and the amount of crystals that hinder the polishing operation. Similarly, this CMp system Bθ ~ ~ is. Do not remove the fluid from the spring disc carrier without hindering the operation of the CMP. / Since the Japanese yen, many specific details are given in detail in order to provide the present invention without some or all of these details. ☆ Other cases:, 2 [ί Detailed description so as not to make the present invention obscure. Port cmpV = 7 = shows the first embodiment of the present invention, including

^ ^ ^. V / i ^ ^ ^ &Qu; γM is on the halberd body 208 (such as a wafer carrier) 528651 .. V. The exposed surface 204 of the wafer 20 6 of the invention description (11). The wafer 206 may be any of the wafers described above, for example. The polishing head 202 is designed to polish the surface 204 of the wafer 206 with a polishing pad 209, which may include a pad sold by Linear Technology (LPT), a rotary CMP pad material, and a fixed polishing pad material Wait. In general, any pad material that can achieve the desired polishing level and accuracy can be used as the pad. As described in the following more detailed description of θ, the features used to make the following identified force reproducibility measurements are reduced to reduce the material requirements of this pad 209 to compensate for the mechanical tolerances discussed below. A movement of the grinding head 202 and the pad 209 on the head 202, such as' used to perform the grinding of the wafer 206, or to adjust the pad 209 to move around the head 202 and the outline The respective coaxial shafts 2 0 0 and 2 1 1 of the pad 2 0 9 rotate (see arrow 20 9R). Generally speaking, the head 202 is arranged to avoid movement parallel to the coaxial axes 2 10 and 21, i.e. to avoid movement towards or away from the respective wafer carrier 208, for example. The grinding head 202 and another movement of the pad 209 on the head 202, for example, to perform polishing of the wafer 206, or to adjust the head 202 and the pad 209 to move horizontally (See arrow 209). It should be understood from the arrows 2 0 9 in FIGS. 1 A and 1 B that, for example, the grinding head 200 can apply the force FP-W to the wafer 206 and to the wafer carrier 208 at different positions. . This position is indicated by the displacement DF-W measured by the shaft 21 2 or 214. The secondary opening structure of the system 2000-1 is introduced into the grinding operation by using different or the same removal rates on different areas of the exposed surface 204 of the wafer 206. Unlike the conventional CMP system described above, in which the entire polishing head pad is in contact with the entire exposed surface of the wafer, in the sub-opening CMP system 2001, at any particular time T1, the exposed surface 204 of the head 202 and the wafer 206 is prepared of

Page 17 528651 V. Description of the invention (12) The size of the contact surface area may be different. In addition, in the secondary opening 200-1, the movement of the preparation head 2002 toward the wafer carrier 2 is prevented, and the movement of the wafer carrier 208 toward the polishing head 2002 causes a specific force to be applied to the exposed surface 204 of the wafer 20 6. Area 2104R, so in the pull, such as τ !, specifically remove excess material m from their specific area 2_, as shown in FIG. 2A, the exposed surface of wafer W2 A fixed area 204R is horizontally displaced from, or relatively eccentric from, the central axis 212 of the wafer carrier 208. The central axis 212 is concentric with the central axis 214 of the wafer 206 carried by the carrier 208. As shown, the displacement of the force Fp —w is indicated by DF —w, which is measured horizontally in FIGS. 1A, 1B, and 2A. From arrow 209H, it can be understood that the grinding head 202 may move horizontally and contact different specific areas 204R of the exposed surface 204. At the same time, the area of the exposed area 204R of this contact will change according to the value of the displacement DF-W. Therefore, for a specific value of the force FP-W applied to the wafer 206 by the polishing head 202, the pressure on the exposed and contacted area type will decrease as the area 204R area increases. For the purpose of illustration It should be understood that the force FP-W is the average force exerted by the polishing head 202 on the area of the area 204R, and this average force is referred to as the center of the area of the area 204 R that is applied. It can also be understood that in order to uniformly polish the wafer 2 06 Exposed area 2 04R, the average amount of pressure should be applied to different exposed and exposed areas 2 04 R. As the exposed and exposed area 2 04R area increases, for example, the force fp-w should increase to equalize the amount of pressure 0 As shown in FIG. 1B, there are the starting positions of the wafer 206 and the wafer carrier 208. The starting positions include the central axis 214 of the wafer 206 and the central axis 2 of the wafer carrier 208. Orientation. For example, when the grinding head 200 is designed to

Page 528 651

When the central axis 2i0, which is also vertical, is rotated, the first one of the axes 21 2 and 214 is substantially vertical. The term "substantially vertical" will be used herein to describe the invention as defined above. Furthermore, in the exemplary case where the grinding head 200 is designed to rotate on the central axis 2 10 which is also vertical, the starting position includes the second starting position of the exposed surface 204 of the wafer 206. The second starting position of the exposed surface 204 is at an angle (starting angle) of 90 degrees from the starting approximately perpendicular positions of the respective central axes 212 and 2 14 of the carrier 208 and the wafer 206. In the phrase "starting orientation" used in this application, the word "starting" indicates the above orientation, which occurs when the pad 20 of the polishing head 20 is engaged with the exposed surface 2 of the wafer 20 6 The time before TOPW. Therefore, at time T 0 PW, there is no force f p — w exerted on the wafer 2006 by the pad 20. FIGS. 1A, 1B, and 2B also show that in the sub-opening structure using the CMP system 200-1, at any specific time T1, the grinding head 202 is in contact with the exposed surface 216 of the elastic disk 218 mounted on the pad adjustment head 22 The contact surface area I can be changed. This time T1 is after the start time topp when the pad 20g does not contact the elastic disk 218. In addition, in the secondary opening CMP system, as the grinding proceeds, 202 keeps moving in the opposite direction to the axis 210 and 211, as if the pad j joint 2 2 0 is moved toward the grinding head 2 02, the grinding head 2 〇2 Another force fp is applied (adjustment is the force, FIG. 2B) alone to a specific area 21 6R of the elastic disk 218. One of this specific area 216R of the elastic disk 218 on the paddle 220 is also removed, or relatively eccentric, from the central axis 222 of the pad adjustment head 22Q coaxial with the central axis 224 of the elastic disk 218. As shown in Figure 2B, the displacement of the force Fp-C is indicated by 卯 -C. The displacement DF-C is measured horizontally in FIGS. 18 and 26 and on the shaft 528651 V. Description of the invention (14) 222 and 224, on the one hand, and the shaft 210 of the grinding head 202. As mentioned above, the force FP-W is the average force FP-W, and the force FP-C is the average force. Similarly, pressure and area factors regarding region 204R apply to region 216R. Furthermore, in the exemplary case where the grinding head 202 is designed to rotate on the central axis 2 1 0 which is also vertical, as shown in FIG. 1B, there is also a spring disk 2 1 8 and a pad adjustment head 2 2 The starting position of 0. This starting position includes the third starting position of the central axis 222 of the head 220 and the central axis 224 of the elastic disk 218. For example, when the grinding head 202 is designed to rotate on a central axis 2 10 which is also vertical, the third starting orientation of the shafts 2 2 and 22 4 is substantially vertical. Further, in the exemplary case where the grinding head 202 is designed to rotate on the central axis 21 () which is also vertical, the starting position includes the fourth starting position of the exposed surface 216 of the elastic disk 218. The fourth starting position of the exposed surface 2 1 6 is located at an angle (first angle) of approximately 90 degrees from the starting positions of the respective central axes 222 and 224 of the head 2 2 0 and the elastic disk 218. In the phrase "starting position" used in the present application, the word "starting" also indicates the above position, which occurred just before the pad 209 of the grinding head 200 and the elastic disk 218 exposed the surface 216. Time TO PP. Therefore, initially there is no force FP-C exerted on the elastic disk 218 by the pad 209 (FIG. 2B). Further reference is made to Fig. 2A and an exemplary case where the grinding head 202 is designed to rotate on a vertical central axis 210. The CMp system 2000-1 includes multiple linear bearing structures 23 and 232 of a wafer carrier 208. In general, the structures 23 0 and 232 help the eccentric force i? P-W make reproducible measurements. Therefore, the force f p-f applied to the wafer carrier 2008 can be accurately measured, as defined above, even though this force FP-W is applied eccentrically to this carrier 2008. In more detail,

Page 20 528651 V. Description of the invention (15) Structures 230 and 232 enable to provide an accurate indication of the amount of eccentric force F P-W as defined above. For example, considering the explanatory word "precise indication" of Fig. 2A, the mentioned reproducibility measurement technique can be described in terms of many forces FP-W, having the same value from one time T1 to another time Π. With the present invention, each time T1 equal to the force FP-W is measured, and the measured or indicated value is the same within a very small tolerance. For example, the same eccentric force FP-W is applied to the wafer carrier 208 by the polishing pad 209. It should be understood that, as a mechanical device, the structures 23 and 232 will cause some amount of the same eccentric force FP-W (called force scare, or friction force FF) to be damaged, such as due to friction. In this paper, the reproducibility measurement technique mentioned is that for such identical eccentric forces FP-W, the loss of the force F F in the measurement system and in the system used for the support of the building will be approximately the same and can be reproduced. Therefore, by providing the minimum of the mechanical structure between the forces FP-W and the structures 230 and 232 as described below, there is no loss of force FF in the carrier 208, and only the separate bearing structures 23 and 232 are left for a specific individual measurement. The source of force FF. For example, the structure 230 resists all the forces FP-W applied to the wafer 206 and the carrier 208 except for the vertical component Fp-Wv, which is eccentric with respect to the initial first orientation of the wafer carrier 208 center axis 212. The linear bearing 23 ensures that the structure of the wafer carrier 208 cannot respond to this eccentric force in an undesired way — w movement: For example, in this CMP system 20 0-i, this eccentric force is not allowed to move the wafer carrier 208 or The initial first positions of the wafers 20 6 with respect to the respective central axes 21 2 and 214 of the individual wafer carriers 208 and wafers 206, except as follows. The exception is that only the wafer carrier 208 and the wafer 20 6 are allowed to move in parallel (see arrow month 233) at their respective first central axes starting from the first axis 2 2 and 2 14. arrow

528651 V. Description of the invention (16) The head 233 is parallel to the vertical component Fp —. twenty three. In Figure 2A, the thin two-graph Γ depicts two of the three multi-linear bearing structures and FIGS. 5A-1 to 5A-3, and FIG. 5B—a multi-linear bearing 230. Set the main bearing block 25 to one, and one to 253 linear bearings. Each bearing includes three bushings 254, two of which are made of a material sold at 0 feet. The core material is impregnated with two hard micro-32 for low friction characteristics and increased wear resistance. Suitable for 5 I, with inner diameter] / 2 inches and length about 1 & 1/4 inches. The sleeve 25 ^ is a linear bearing model FL008 sold by Pacific Bearing. Quot & 'i ί 2: 4 In / II, each sleeve 254 is depicted as a pair of circles at intervals. Each 254 is open at the bottom 256 to receive a matching bearing shaft 258, which is shown as an upwardly extending line for illustration purposes. Each. Made of rust steel. When the shaft 258 has a maximum allowable tolerance based on the shaft 258, the size and the sleeve have a maximum allowable negative tolerance based on the shaft 258. Each suitable shaft 258 may have an outer diameter of approximately less than 1/2 inch. In order to increase the gap is not less than 0.005 inches. The shaft 258 may be approximately 1 & 1/4 == the disk shaft f: the loading unit plate m extends upward and extends through a sleeve 254. The main bearing block 250 is fixed to the vacuum chuck 262 of the round carrier 208. The chuck carries the wafer

6. It receives an eccentric force Fp_w during polishing, which is indicated by the wafer loading on. As described above, FIG. 1B shows the starting positions of the wafer carrier 208 and the wafer 206 before the exposed surface 204 where the pad 209 of the polishing head 200 is engaged. Therefore, the force M1 exerted on the wafer 206 by the pad 209 at the beginning, p. 22 528651 V. Description of the invention (17) In this exemplary case, each of the wafer carrier 208 and the wafer 206 The axes 2 12 and 214 are vertical and coaxial. Recalling the exemplary case, the polishing head 202 is designed to rotate on a vertical axis 2 10, and an eccentric force FP-W (FIG. 2A) is vertically applied to the wafer 206 and the head 208. In detail, the 'two-bearing linear bearing 2 5 3 group 2 5 2 ensures that the structure of the wafer carrier 208 cannot respond to this eccentric force in a suboptimal manner. Therefore, the linear bearing 253 ensures that the eccentric force fp-w does not move the wafer carrier 208 or the wafer 206, except that it is perpendicular to and parallel to the respective central axes 2 12 and 214 of the wafer carrier 208 and the wafer 20 6 Start the first position. As a result, the eccentric wafer was loaded with FP-W (shown on the wafer 20f in FIG. 2A), the friction force FF was reduced, and it was transferred to the main bearing seat 25, which is called the allowable vertical force component FP-WV. . Therefore, the force component FP —wc is the net force after deducting the force. Figure 5B-1 and 5A-2 show that the multi-linear bearing structure 23 is an array including a linear bearing 253. The array is assembled to distinguish the multiple linear bearing structure 23 into a portion having a short length in the directions of the shafts 212 and 214 and a small diameter relative to the diameter of the wafer 206 and the spring disk 218 (for example, 8 inches). Furthermore, this division surrounds the linear bearing 253 (FIG. 5B-3) of the circular guideway 26 6 positioning structure 23 at a uniformly spaced distance. In this way, when the wafer carrier 208 or the pad adjusting head rotates, a series of fast and independent linear bearings 2 53 are located under the eccentric force FP-W to be sensed in the CMP system 201 operation. -^ Acts on the loading unit 263 ('and 5B]). Load sheet Do not use a quasi-tension meter such as No. LPU-500LRC sold by * Transducer Technique. The loading unit may have a load sensing range of about 0 pound force. 528651 V. Description of the invention (18) to 500 pound force. Even better, a more accurate load sensing range can be used, such as about 0 # to about 400 pounds of force. The loading unit 26 3 is fixed to the elastic disk bearing and the loading plate 260. Under the action of the force FP-WC, the mobile fork loading unit 263 allowed by the main bearing seat 250 is inductive, or the loading unit 263 is activated, and it responds to this moving input wafer loading signal 264 (Fig. 5B- 丨). As described above, in order to uniformly study the exposed area 204R of the wafer 206, for example, a uniform, or average amount of pressure should be applied to the different exposed and contact areas 204R. With the exposure and connection, the area of the region 204R increases, for example, the force Fp__w is increased to make the pressure amount average. Because the polishing pad 2 002 was executed on a wafer 206 h during the polishing operation + moved in the direction of the arrow 209H, and because this polishing pad 2 2 moved, the exposed surface 204R was affected by the polishing pad 2 at different areas. 9 contact, the force FP-W applied to the wafer 20 6 must be changed precisely. The wafer loading signal 264 is processed and will be directed upward (see F in FIG. 1β). The force of 0.8 is adjusted as necessary to provide an appropriate force Fp-w exerted by the polishing pad 202 on the wafer 2006 and the wafer carrier 208.直线 The linear bearing structure 232 will be described with reference to Figs. IB, 2A, 5A-1 to 5A-3, and 5B-1 and 5B-2. The main bearing block 25 is provided with three straight lines f 2 27 2 of the second group 27 0 and includes three sleeves 2 7 4 (depicted by spaced pairs of circles). The sleeve 274 has an open bottom 276 to receive a mating bearing shaft 278 (depicted as a line up = extending). The shaft 278 is received in the bore 283 by screws 281 ^ 5 on the buckle bearing plate 279 (Figure Ό. Set the size of the bore 283 to allow the mouth to snail, 糸 nail 糸 return plate 2 7 9 opposite plate 2 6 0 movement, such as 0. 50 inches used to pass vertically through the retaining ring 282. For example, the bearing 272 may be the same type of bearing as the bearing 253. The retaining ring bearing plate 279 is fixed to the retaining ring by a screw 285 Base

Page 24 528651 V. Description of the invention (19) 2 8 0 (Figure 1 5). For example, the substrate 2 〇 is designed so that the vertical movement is limited by the second group of 2J0 linear bearings 272 and moves freely through the same penetration (0.0 50 inches) as the plate 279. A buckle 282 is movably provided on the top of the buckle base 28o to contact the abrasive pad 209. Therefore, the retaining ring 282 is provided to move independently to the plate 260 and independently to the main bearing seat 250. The retaining ring 2 8 2 engages the grinding pad 20 9, so the retaining ring 282 can be replaced from time to time by loosening the screws 2 89 (Figure 1 5). As described above 'FIG. 1B shows the starting orientation of the wafer carrier head 208. The head 208 includes a buckle base 280 and a buckle 282. The buckle base 280 surrounds and is spaced from the vacuum chuck 2 6 2. The retaining ring 2 8 2 is designed to be abraded by a polishing pad 209 during a wafer polishing operation, and the polishing pad 209 imparts a force FP-R on the retaining ring 282. The force FP-R is eccentric to the axis 212 of the wafer carrier 208. At the time T0PRR before the pad 20 9 of the grinding head 20 2 engages the retaining ring 282, the outer cylindrical surface 284 is vertical. This surface 284 is bounded by the buckle base 280 and the buckle 282. At this time, TOPRR, initially, no force FP-R is exerted on the buckle 282 by the pad 209, and the respective central axes 286 and 288 of the buckle base 280 and the buckle 282 are vertical. Recalling the exemplary case, the grinding head 202 is designed to rotate on a vertical axis 210. Therefore, the grinding head 202 applies the eccentric force FP-P to the retaining ring 282 vertically downward. In general, the structure 232 functions in the same manner as the structure 230 described above. In more detail, the structure 2 3 2 helps to make the reproducibility measurement of the eccentric force FP-R. Therefore, the force FP-R applied to the buckle 282 can be accurately measured, as defined above, even if the force FP-R is eccentrically applied to the buckle 282. In more detail, Structure 2 32 enables the above definition to be provided

Page 25 528651 5. The invention description (20) accurately indicates the amount of this eccentric force F P-R.

The structure 232 resists the vertical component FP-RV except for this eccentric force FP-R applied to the buckle 2 82. In detail, the group 270 of the three-bearing linear bearing 273 ensures that the structure of the retaining ring 282 cannot respond to this eccentric force FP-R movement in an undesired manner. Therefore, the linear bearing 272 ensures that this eccentric force does not move the retaining ring 2 82, except as described below. The retaining rings 282 are allowed to move vertically, parallel to the starting third orientation of the central axis 212 of the respective wafer carrier 208, which is coaxial. As a result, will it be eccentrically loaded?卩 -1 ^ (shown in Fig. 28 acting on the retaining ring 282), subtract the force F F on the structure 2 3 2 and transfer to the retaining ring bearing plate 2 7 9 as the allowable vertical force component F P-R V. For example, referring to FIGS. 2A and 6B, it can be understood that the movement of the buckle 282 restricted by the structure 232 is independent of the movement of the wafer carrier 208 restricted by the structure 230. The linear motor 290 is installed between the elastic disk bearing and the loading unit plate 260 and the buckle bearing plate 279. The linear motor 29 is preferably provided in the form of a sealed cavity, or preferably in the form of a pneumatic motor or an electromechanical unit. The best

The linear motor 290 is shown in Figures 5A-1, 5B-1, 7, 12A, 13A, and 14A.

Includes an air bag 292 that provides airflow (see arrow 293) via the inlet 294. As shown in FIGS. 5B-1 and 13A, the elastic disk bearing and the loading unit plate 260 are provided with an annular groove 296 for receiving the pouch 292. The linear motor 290 is selectively actuated by supplying the fluid 293 to the balloon bag 292 at an amount that is ideally impacted by the balloon bag 292 at different pressure (pB) amounts. For example, referring to FIG. 12A and ΐ2β, the maximum impact of the capsule = 2 to 92 may be a vertical side measurement of 10 inches. This maximum impact ratio is the vertical size (or thickness) of 0 20 6 which can be ο · ”Ying Ye. For the purpose of this case, the plate 2 6 〇 can be said to be solid in the vertical direction, so it is accurate

Page 26 528651 V. Description of the invention (21) Xu fluid 2 9 3 enters the capsule dream *? Q 9 △ due to the specific impact distance of the fluid 293: two capsules / two = ^ and the capsule 292 will move. Due to # 282 I-r 4-bearing plate 279, the buckle base 280 and the buckle jade Z 8 Z are also upward (in this case, you circle, 206 round. In the example) relative to the vacuum chuck 2 Crystals on 62. For example, the pressure of fluid 293 may be one of many pressures. Usually U :: ΐ will use the fluid 293 under pressure to move the retaining ring 282 to one of the " " positions. For example, the pressure PB may be in a range of about i 5 ps i to about 7 to 1 Op-si. 13A and 13β are cross-sectional views showing the buckle f 282 in one of three vertical positions (unlatched position), where the buckle 282 is away from (below) the wafer 2 mounted on the vacuum chuck 262 〇6 and carrier film 298. In the disengaged position, the retaining ring 282 does not interfere with the removal of the wafer from the chuck 2 62. This pressure PB is small compared to the pressure PB required to place the retaining ring 2 8 2 in another position. The cross-sectional views shown in Figs. 14A and 14B depict the three vertical positions of the buckle 282. The second-most southerly one is generally referred to as the "one" grinding position, as detailed below, and may be parallel to the axis 2 1 4 and 2 1 2 The range of locations. Usually the polishing position is the position of the ring 2 8 2 during wafer 206 polishing. In this grinding position, the upper surface 299 of the buckle 282 is horizontally aligned (or coplanar) with the upper (exposed) surface 204 of the wafer 206. As shown in FIG. 14B, in the grinding position, the peripheral edge 301 of the wafer 206 is surrounded by the inner wall 3 0 3 of the buckle 282, and the surfaces 299 and 204 are coplanar. As noted in the third point, Figures 12 A and 12 B show cross-sectional views in which the retaining ring 282 is at the maximum above (or wafer capture) position, and is suitable for holding the wafer 206

Page 27 528651 V. Description of the invention (22) Positioned on the carrier film 2 98 of the vacuum chuck 2 62, the axis 214 of the wafer 206 and the axis 212 of the wafer carrier 208 are coaxial. As shown in FIG. 12B, in the maximum upper position, the peripheral edge 301 of the wafer 206 remains surrounded by the inner wall 303 of the buckle 282, and the upper surface 299 of the buckle 282 is located above the exposed surface 204 of the wafer 206. To help place the wafer 20 6 in the chuck 2 62 within the retaining ring 2 82. In more detail, the ring loading force FP-R acts eccentrically on the retaining ring 282 and tends to move the ring 282 eccentrically. However, the linear bearing 272 ensures that the movement of the buckle 282 and the base 280 is only vertical, parallel to the starting positions of the respective central axes 2 8 6 and 2 8 8 of the buckle base 280 and the buckle 2 8 2. As a result, only the vertical downward action component FP_RV of the force FP-R (shown as * FP-Rv shown in FIG. 2A as the ring load acts on the buckle 282 vertically) is transferred to the buckle bearing plate 279 via the buckle base 280 . At the same time, the linear motor 290 applies an upward force F M (Fig. 2A) to the retaining ring bearing plate 2 7 9 which supports the shaft 2 7 8 of the linear bearing 2 7 2. The linear bearing 2 7 2 also ensures that only the vertical component force of the force ρ M, or the net force J? M-V is effective for moving the buckle base 280 and the buckle 282 against the vertical load FP-RV of the ring load force fp-r. In this way, the movement allowed by the buckle 282 in response to the force Fp —w (ie, the movement parallel to the starting position of the axes 21 2 and 214) and the wafer 206 on the firehead 262 and chuck 262 in response to the force FP — W are allowed The motion of (ie, the direction parallel to the starting position of the axes 212 and 214) is coaxial. ^ As for the range of attention of the buckle 2 8 2 grinding position, due to the above needs to change the upward force of the round carrier 208 (Figure ib) (based on the area of the exposed and contact area 20 4R), it can be understood that the application also needs to be changed. The force FM of the retaining ring 282 will change the net force FM-V applied to the abrasive pad 209. For example, as shown in Figs. U and B, the ^ grinding head 20 is moved from the extreme left position which does not overlap with the retaining ring 282.

Page 528651

It moves to the right and gradually overlaps with the retaining ring 282, and only the starting area of the small retaining ring 282 overlaps with the grinding head 202. As the overlap area 7 changes from 0 to 209H, in order to maintain the grinding pressure, it is fixed to the area of the retaining ring 282 in contact with the abrasive pad 209, and for example, in the exposed area 208r adjacent to the retaining ring. In the contact area, the force FM-V must be changed. As a result, the grinding position of the above-mentioned buckle 282 is a detailed range position depending on which force FM-V must be applied by the buckle 2 8 2 to the pad 2 09 in order to keep the polishing pressure fixed.

2B and 19B show the pad adjusting head 220, illustrating the direction in which the linear bearing assembly 304 is used to restrict the relative movement between the main bearing seat 306 and the spring disk bearing and the loading unit plate 308. Recalling the exemplary case, the grinding head 202 is designed to rotate on a vertical axis 21o. The CMp system MOq includes an additional multiple linear bearing structure 3 10 of the pad adjustment head 220. In general, the structure 3 ^ 0 is similar to the structure 230. Therefore, the structure 31o functions in the same manner as the structure 230 described in 1T. In more detail, the structure 31 helps to make the reproducibility measurement of the eccentric force FP-C. Therefore, the force ρ p-c applied to the spring disk 218 and the carrier or head 220 can be accurately measured, as defined above, even if the force p-C is eccentrically applied to the spring disk 218 and the head 22. Therefore, the structure 31 can provide an accurate indication of the amount of this eccentric force F P-C as defined above.

The structure 310 resists all positions eccentric to the starting position of the center axis 222 of the pad adjusting head 22o with respect to the force FP-C applied to the elastic disk 218 except for the vertical component FP-CV. In this way, the linear bearing 310 ensures that the structure of the head 220 does not respond sufficiently to this eccentric force f p — ◦ to move. For example, only the head 220 and the elastic disk 218 are allowed to move in parallel (see arrow 312) at their respective central axes 2 2 2 and 2 24 (which are co-axial) starting positions. Arrow 312 is parallel

528651

For vertical composition FP-CV. Figure 2B illustrates more closely two of the three multi-linear bearing structures 30, while Figures 16A, 16B, and 19B more closely illustrate three multi-linear bearings 310. The main bearing block 306 is provided with three linear bearings 314, including three hollow cylindrical sleeves 316. The sleeves 3 16 have open bottoms 318 to receive and, the sleeves 316 cooperate with respective shafts 320. For example, the sleeve 316 of the linear bearing 314 may be a linear bearing model FL08 sold by Pacific Bearing, which is the same as the bearings 230 and 232, and is depicted in FIG. 2β in a similar manner to that shown in FIG. 2a. The shaft 320 may be manufactured in the same manner as the shaft 258 described above. The main bearing block 30 6 is fixed to (and carries) the collet 322 of the pad adjustment head 220. The chuck 322 carries a spring disk 218, which is subjected to an eccentric force FP_C during contact with the pad adjustment head 220, which is indicated in FIG. 2β as a spring disk loaded on the spring disk 218. As described above, FIG. 1B shows the starting positions of the pad adjusting head 220 and the elastic disk 218 before the pad 209 of the grinding head 202 engages with the exposed surface 2 16 of the elastic disk 218 (ie, the start time T0PP). Therefore, the force FP-C applied to the elastic disk 218 by the pad 209 at the beginning is independent, and in this exemplary case, the respective axes 2 2 2 of the heads 2 2 0 and 2 2 4 of the elastic disk 218 are vertical. Recalling the exemplary case, the grinding head 202 is designed to rotate on the vertical axis 2 10, and at any time, τι described above can apply an eccentric force Fp-c vertically (Figure 2B) to the elastic disk 218 and head 220. Does the structure 310 resist all forces applied to the head 22 and the spring disk 218? ? -(: In addition to the vertical component [?-(^. In detail, the three-bearing linear bearing 314 ensures that the structure of the head 220 cannot respond to this eccentric force FP-C movement in an unsatisfactory manner. Therefore, the linear bearing 3 丨 4 ensures This eccentric force

Page 30 528651 V. Description of the invention (25) The FP-C will not move the head 220 or the elastic disk 218, except that it is perpendicular to the starting positions of the central axes 222 and 224 of the head 220 and the elastic disk 218, respectively. As a result, the eccentric wafer was loaded with FP-C (shown in FIG. 2B acting on the elastic disk 2 18) 'with the friction force FF reduced and transferred to the main bearing block 30 6 as a vertical component force (or net force) FP-CV And act on the loading unit 324 (Figures 2B, 16B, and 19B). The loading unit is fixed to the elastic disk bearing and the loading unit plate 308. The allowable movement of the main bearing block 306 is sensed by the loading unit 324, or the loading unit 324 'is actuated, and its input spring plate loading signal 326 (Fig. 16B). The loading unit 324 may be the same as the loading unit 263, and the loading unit signal 326 may be used in a similar manner to the loading unit signal 264. In view of the above discussion, it should be understood that the tendency of the chuck 262 or the wafer carrier 208, or the pad adjustment head 220 to tilt, or to move out of the above-mentioned starting position is merely a tendency, that is, an action not taken. Failure to take a tilting action is due to, for example, the operation of the linear bearing structures 230, 232, and 320. The CMP system 200-1 is not only equipped with the above-mentioned help to make the eccentric force Fp-W reproducible, for example, it also provides equipment for other Cmp operations (usually mentioned with reference number 338). For example, equipment 338 for wafer carrier 208 includes equipment 338C for vacuum chuck 262; equipment 338B for pouch 292; equipment 338S for buckle 282; and equipment 338LC for loading unit 263. This device is provided for CMP operation without interfering with cMp operation. Examination: These devices 338 of the round carrier 208, refer to FIGS. 3A, 3β, and 3 (: perspective views and exploded perspective views of FIGS. 4A and 4B 'and FIGS. 5A-u5A_3 and FIG. 5B-i enlarged perspective views of the spoon Figures ^ to 扣 show the components of the first specific example "^ 丨" structure, including fixing the spring disk bearing and the cracked unit plate 26〇 to

Page 31 528651 V. Description of the invention (26) The rotary tool indexer 340 on it. The rotary tool indexer 34 includes an upper section 342 and a lower section 344 (FIG. 3C). The lower section 344 is connected to a mandrel 346 that rotates and applies a vertical force to the lower section 344 in the up and down directions. The upward vertical force is shown as a force F in FIG. 1β and causes the polishing pad 209 to resist the force applying the force Fp-f, for example. As shown in FIGS. 3A and 3C, the mandrel 3 4 6 is supplied with a fluid such as deionized water (DI water) 348 and a vacuum via a conduit 350 to a lower section 344. A device 3 3 8 C is also provided for a vacuum chuck 2 6 2 in. In addition, the mandrel 3 4 6 is supplied with a fluid such as DI water 3 5 2 through a conduit 3 5 4 to a lower section 3 4 4 and a separate device 3 3 8 S is provided for cleaning the wafer 2 6 and the ring base 2 8 0 inside. At the same time, the mandrel 3 4 6 supplies a fluid 293 (such as air under pressure) via a conduit 358 to the lower section 344 to separately provide equipment 338B for operating the linear motor 290. The mandrel 346 is also provided with a device 338LC by supplying a belt loop 360 connected to a power connector (not shown) of the lower section 344. The connector on the lower section 344 closely cooperates with the connector (not shown) capable of outputting the wafer loading unit signal 264 from the system 2000-1. The lower section 334 and the upper section 342 use standard releasable connectors 3 ^ 1 (Figure 3C). In order to releasably connect the portions 334 and 344, the connection = 361 has a cam (not shown) which is driven from the lower section to the upper section 342 by a piston rod (not shown) from the middle to the middle 362. The cam engages the ball bearing (not shown) and pushes the ball bearing upwards and partially into the V-groove (not shown) from the bearing sleeve (not shown) and partly. @ 球 轴承 Releasably accommodate the upper section 342 and the lower section 344 tightly connected =, s When the upper and lower sections 342 and 344 are separated, the cam is retracted from the upper section 342 'so that the ball bearing completely leaves the V-shaped groove and releases the upper section 342. 3A and 9 show the bottom 36 6 of the upper section 342. There are four connections in the upper paragraph

Page 528651

口 contributed equipment 338. The first interface 368 is similar to the interface (not shown) in the lower section 344 to engage DI water and vacuum (see arrow 348). Interface 368 houses a standard conical seal that extends from a similar interface in lower section 344. The DI water 348 flows, and the vacuum 348 is applied through the interface 368 through the O-ring 3 70 shown in FIG. 5A-1 to the nozzle shown in FIG. A figure 3A and 10 show a second interface 376 which is engaged with a similar interface (not shown) to the lower section 344 to supply DI water (see arrow 3 52). The interface 3 76 has an F-seal 378 engaged with a standard conical seal (not shown) similar to the interface extending from the lower section 344. The 01 water 352 flows through the interface 37 6 and passes through the O-shaped mounting 380 shown in FIG. 5A-2. To six outlet manifold nozzles 382 shown in FIGS. 5B-2 and 10. The nozzle 382 is passed through a pass-through interface 374 into the plate 260. , 03A 5B 2, and 10 show two interfaces M4, which are engaged with interfaces (not shown) similar to the lower section 344 to supply air (see arrow 293). Interface, T: 标准 Standard conical seal with interface similar to that extended from the lower section 3 4 4 = (not shown) ringing seal 塾 386. The air (see arrow 293) flows through the interface 3 84, and is connected to the inlet 294 of the pouch 292 through the O-ring 388 to 401, which is not the same as that shown in FIG. 10 (the husband connects the upper belt ring 360 through the lower section 344) The connection descent on the top (not without) is connected with the technical skills contained in the lower section 344. Strong .... 1: The spring single stilt connection in the interface of the 0: the mouth of the spring leaf extends upwards into the provided on Upper section 34? Electrical contact 398 of connector 400 attached to port 402 (Fig. 3 'When the board 260 is connected to the upper section 342, such as temperature 3, there is a productive bias contact. Fine screws, 4 screws , Then

Page 33 528651 V. Description of the invention (28) Mouth 4 2 has a shoulder (not shown) to oppose the connector 4 00. The interface 4 〇 2 is aligned with the keyhole-shaped interface 406 shown in FIG. 5A-2, and is arranged in the plate 260, for example. Interface 4 06 is large enough to pass connector 400 (to allow connector 400 to move into interface 402). The conductor 408 extends from the connector 400 through the interface 406 to the loading unit amplifier 41 shown in FIG. 4A fixed to the board 260. The amplifier 410 is connected to the loading unit 263 and receives the wafer loading unit signal 264. Figure 5 Person-3 display device 338 (: It is installed in the form of a tube 412 ~ connected to the nozzle 372 (Figure 56-1). Spring disk bearing and loading unit plate 26〇

on. The pipe 412 extends upward through the perforation 41 4 of the main bearing block 25 () 1] shown in FIG. 5 and extends to the push-to-connect tubular connector 416 shown in FIG. 4B. The connector 416 is passed through the interface 418 into the drill chuck 262. The joint 418 supplies vacuum or D ^ X348 to the manifold 420 (Fig. I5) of the chuck 262 to evenly distribute the vacuum or 1) water 348 to the upper surface 422 of the chuck 262. A porous layer 297 is mounted on the upper surface 422. The layer 297 is made of a porous ceramic material with larger pores 297P (picture?). The larger hole 297P provides a 42 ° supply of == Γ8 flow or vacuum 348 from the manifold. Place the large hole Chikuya to the vacuum chuck 262

420 supply vacuum throughout the chuck 262 back to the mouth and self-discrimination B

The entire area of the head. Similarly, the large hole = the entire area of the chuck 262. In addition, the large hole ^ «2; a ^ ^ ^ ^ ^, for all of these purposes, = will deform the wafer 206. The pore size ranges from about 20 to about 50 忾: j has a large pore size ′, which is better, 彳 50 彳, and most preferably about 30 to about 40 micrometers.

528651 V. Description of the invention (29) meters, which is significantly larger than typical ceramics with pore sizes ranging from sub-micron to micron. Figures 7 and 8 show the carrier film 298 provided on the manifold 42o and extending on the upper surface of the porous layer 297 to further evenly distribute the vacuum or water 348 over the entire area of the chuck 262. The film 298 is made of a material sold under the trademark ⑽⑽! ^ Under the model γ 200. The film 298 is provided with cut holes or slits having a size in the range of 0.00 inches to 0. 15 inches, for example. Membrane 2 7 7 is also porous and provides a continuation of layer 297 channels, through which DI water 348 or vacuum 348 / layer 2 97 is supplied. The layers 297 and the membrane 298 cooperate to uniformly and finely distribute the vacuum 348 from the manifold 420 over the entire area of the chuck 262. At the same time, the layer 298 is used to prevent particles from contacting the upper surface 422 of the vacuum chuck 2 62, and to prevent contamination of the wafer 206 when cleaning as described below. In the operation of the vacuum chuck 262, when the wafer 206 is appropriately mounted on the vacuum chuck 262, the axis 214 of the wafer 206 will be coaxially aligned with the axis 212 of the wafer carrier 208. In order to accommodate the wafer 20 6 on the carrier film 298, a vacuum 3 4 8 yoke is added to the second interface 3 8 4 and thus to the chuck manifold 4 2 0 to reduce the pressure under the carrier film 298. The reduced pressure causes the surrounding pressure to force the wafer 20 against the carrier film 298. In this suitable device, the wafer 206 will block all the channels of the carrier film 298, so the holes 297P of the layer 297 will have significantly reduced airflow at this time. If the wafer 206 is tilted on the film 298 or is not placed on the film 298 in a coaxial orientation ', the airflow entering the carrier film 298 is measured by the pressure detector 299D to indicate an improper orientation. DI water 348 is supplied under pressure to the interface 384, and thus to the manifold 420 ° DI water 348 flows from the manifold 420 into the hole 297P of the layer 297, and from the layer 297. Page 35 528651 V. Description of the invention (30) Through the carrier membrane 2 9 8 and wafer 2 06. D I water 3 4 8 eliminates the pressure difference across the wafer 2006, releases the wafer from the chuck 262, and cleans the surface of the carrier film 2 98 outside the wafer. DI water 348 further flows through the hole 279P of the membrane to force the slurry to leave the hole 2 97 of the membrane 2 97 and the hole 2 97 P of the membrane 2 9 8 and clean the vacuum chuck 2 6 2 in preparation for grinding the next wafer 2 06. In this way, the DI water flows through the membrane 298 and the layer 297 to avoid collecting or accumulating particles under the wafer 206 when the wafer 206 is mounted on the mold 298. The D I water 348 and the removed mud 426 flow into a central containment tube (not shown). 5B-1 and 8 show a device 338S for supplying DI water 35 2 from a manifold 382. The tube 430 is provided in six lengths, connecting one length to one of the six outlets 432 of the manifold 382. The manifold 382 extends upward through the opening center of the pouch 2 92 and the opening center of the buckle plate 279, so each length of the tube 430 is within the space between the buckle base 280 and the loading unit 263. The buckle base 280 is shown in FIG. 8 with an inlet 4 3 4 tap into the inner side wall 4 3 6. Six of these entrances 4 3 4 are provided around the inner side wall 4 3 6 at an even pitch. The inner wall 4 3 6 is made of hard engineering plastic. It can be an unreinforced semi-crystalline thermoplastic polymer material, such as polyethylene terephthalic acid S sold by Port Plastics under the trademark ERTALYTE PET-P. Entrance 434. Each inlet 434 is provided with a pipe joint 438 connected to one length of the pipe 430. The DI water 3 5 2 is supplied and supplied to the manifold 3 8 2 via the mandrel 3 4 6, which distributes the DI water 352 to the length of the pipe 430 and to the joint 438. 14A and 14B show the general grinding position of the buckle 282 in which the exposed surface 204 of the wafer 206 and the top 2 99 of the buckle 2 282 are coplanar, or aligned horizontally. The buckle base 280 is also shown separated from the vacuum chuck 2 62 by a distance space 440. As shown in Figures 8 and 22, each joint 438 and outlet 434 are connected to a channel in the inner wall 436

528651 V. Description of invention (31) 442. Each channel 442 has an angular structure to provide nozzles 444 in upward and downward directions. FIG. 8 also shows the arrangement of the nozzles 444 to direct the DI water 352 into the space 440. Figure 22 also shows that each channel 442 extends away from the radial direction so that the DI water 352 is directed around the shaft nozzle 444 in a peripheral (or circular) direction (see arrow 445). The channel 442 supplies the DI water 352 to the nozzle 444, which directs the DI water 3 52 into the space 440 in a circular direction 445. In the enlarged view of FIG. 4B, the DI water (see arrow 352) from the nozzle 444 is also shown flowing against the bottom side (or protrusion) 446 of the wafer 206 protruding on the vacuum chuck 262. The protrusion 446 may extend approximately 0,040 inches over the buckle base 280. At the same time, FIG. 14B shows (see arrow 448) the flow or seepage of mud 426 through a crack or annular slit 452 between the retaining ring 282 and the wafer 206. Stream 448 causes mud 426 to enter space 440. The DI water 3 5 2 guides to remove the slurry 4 2 6 from the upper end of the space 4 4 0 against the bottom side 4 4 6 of the wafer 2 06. The bank 4 5 4 blocks the exit of the DI water 3 5 2 and the mud 4 2 6 from the upper end of the space 440. The bank 454 is defined by the thin dimensions of the protruding bottom side 446 of the wafer 206 and the slit 452. As shown in Figure 14a, the exit machine is made into a side wall 438 under the bank 454 and adjacent to the gasket 458. The outlet 456 is assembled to provide a ring-shaped lip 46o, which is opposite to the inclined inlet wall = two St60 and the opposite wall 462 defines an outlet 464. ☆ Under the centrifugal force between the wafer carriers, the mouth of the mud 426 from the nozzle 444 is pushed outward to enter the cavity 464 and passes through the exit hole 466. ⑽9 ′ is tightly fixed (such as gripped) between the main bearing seat 250 and the chuck 2. In this way, the bank 454, the seal, and the carrier

528651 V. Description of the invention (32) 208 The related adjacent structure contains mud 426 and DI water 352. The DI water 352 cleans the bottom side 446 and the space 440 of the wafer 206. The outlet 4 56 receives the mud 426 and the DI water 352, and it is propelled from the space 440 except for the rotation of the carrier 208, and there is no mechanism for pumping with a drum.

The CMP system 20-1 is not only equipped with the above-mentioned features for measuring the reproducibility of the eccentric force FP-W, but it is also equipped with equipment for other CMP operations (usually referred to by reference number 3 38). For example, the device 3 3 8 of the pad adjusting head 2 2 0 includes a device 338PS for sensing the elastic disk 218 on the chuck 322; a device 338PP for cleaning the elastic disk 218; and a device 338LCP for the loading unit 324. This device is provided for CMP operation without interfering with CMP operation. Considering these devices 338 of the pad adjustment head 220, refer to the exploded perspective views of Figs. 16A and 16B, and the perspective view of Fig. 17A and the cross-sectional view of Fig. 19A. In the following description, structural elements that are the same as or similar to the above description are described using the previous reference number plus a reference number of 300.

Figs. 17A and 17B show the assembly of the first specific example 200-1 structural element, including a rotary tool indexer 640 to which a spring disk bearing and a loading unit plate 308 are fixed. The rotary tool indexer 640 includes an upper section 642 and a lower section 644 (FIG. 17C). The lower section 644 is connected to a mandrel 6 4 6 which rotates and applies a vertical force to the lower section 6 4 4 in the up and down directions. As shown in FIG. 17C, the mandrel 6 4 6 is supplied with a supply fluid such as DI water 648 through a conduit 650 to the lower section 644, and a device 338PP is also provided in the collet 322. In addition, the mandrel 646 separately supplies a device 338PS by supplying a vacuum 695 through a duct 696 to a lower section 644, for sensing whether the elastic disk 218 is on the chuck 322 or not. The mandrel 646 is connected to the elastic disc package by providing a belt loop 660

Page 38 528651 V. Description of the invention (33) ------ The equipment 338Lcp is provided with a single ^ signal 326 to determine the force applied by the elastic disk 218 to the polishing pad 209 during the grinding operation. The belt loop 66o is connected via a connector (not shown) on the lower part # 644, which is engaged with a spring stilt connector (not shown) accommodated in an interface (not shown) in the lower section μα. 17A, the spring single stilt extends upward into the electrical contact 698 of the connector 700 of the connector 702 provided at the upper section 642 with elastic bias contact. When the board 308 is connected to the upper section 642, if the six screws 704 are used, the interface 702 has a shoulder (not shown) to resist pushing the connector 700. Align interface 702 with interface 706 shown in Figure 16B, as set in board 56. The interface 706 is large enough to pass through the connector 70 0 (to allow the connector 700 to move into the interface 700). The conductor 708 extends from the connector 700 through the interface 706 to the loading unit amplifier 710 shown in Fig. 16B fixed to the board 560. The amplifier 71 is connected to the loading unit 324 and receives a flexible disk loading unit signal 326. The lower section 644 and the upper section 642 are engaged in the standard manner described above (i.e., by the releasable connector 661) (Fig. 17C). The structure described above can release the ground connection portions 642 and 644. The two pressurized air lines actuate the piston (not shown) of the connector 661 and cause the connector 661 to lock the upper section 642 to the lower section 644, or release two sections. / Wash the elastic disc to remove abrasive debris and other materials. Will be elastic

218 shown in Figs. 16A, 16B, and 19B include two similar dish-like layers g02A and 902B, which are adhered to each other. The first layer 902A is made of carbon steel and has a through hole 903. For example, the perforation 90 3 may be a hole having a size of about 150 inches. The perforations 90 3 are evenly distributed over the entire layer 209A. Perforated carbon steel layer 902A nickel plated. Then, the perforated and nickel-plated layer 209A is coated with diamond material.

528651

The layer 20 9A is in the form of a dish having a diameter of about 9.5 inches, which conforms to the outside of the buckle 282.卩 diameter and the diameter of the second layer 209B. The second layer 209B is a magnetic disk with an adhesive backing. The second layer 009 B is provided with smaller perforations or openings 904. For example, the opening 904 may have a size ranging from about 0.0010 inches to about 0.015 inches. The elastic disk 218 is mounted on the pad shouting head 220 having the layer 9025B touch head 220, so the diamond is coated. The surface of the cloth faces the pad 209. The device 338P used to clean the spring disk 218 includes an upper section 642. Figures 17A, 19B, and 20 show the bottom 666 of the upper segment 642. In the above paragraph 642, there are two interfaces providing equipment 3 3 8. The first connector 6 6 8 is similar to the connector in the lower section 6 4 4 to supply DI water (see arrow 648) for cleaning operation. The DI water 6 4 8 flows through the interface 6 68, through the o-ring 6 8 0, to the connector 672 shown in FIG. 20, and through the through interface 674 into the board 308. The joint 672 is connected to a pipe or conduit 712. The tube 712 extends upwardly from the joint 672 through the perforations 71 4 (Fig. 16A) in the main bearing housing 3 06 and to the push-to-connect tubular connector 7 1 6. Pass the connector 71 6 through the socket 71 8 of the drill-in chuck 3 2 2. The interface 718 is shown in FIG. 16B for supplying DI water 648 to the manifold 720 of the collet 322 to evenly distribute the DI water 648 on the upper surface 722 of the collet 322. The collet 322 is provided with a lip 900 that extends beyond the upper surface 722. Lip 900 defines an embankment that blocks a pool or reservoir of DI water 6 48 on chuck 322. The DI water 648 is supplied to the chuck 3 at a preferred flow rate of about 200 to about 300 cubic meters per minute (ccm), more preferably a flow rate of about 400 to about 20,000 ccm, and an optimal flow rate of about looo to about woo ccm. 22, and flows outward from the manifold 7 2 0 through the perforations and openings in the elastic disk 21 8 and passes through the elastic disk 2 1 8 to slowly pass over the lip 90 0 to form a waterfall and slowly flow out of the collet 322. In this way, will be cool

528651 V. Description of the invention (35) The elastic disk 218 on 322 is immersed in DI water 648, and the DI water flow is washed or cleaned by the elastic disk 218, so the elastic disk 218 helps to grind the pad 20 9 Ideal Adjustment.

Figures 19a and 21 show that the device 338PS is assembled to supply a vacuum 6 95 from a conduit 696 to the interface 920. The hole 922 connects the interface 920 to the nozzle 924 mounted on the spring disk bearing and loading unit plate 308. The tube 926 is connected to a nozzle 924 ' and extends upwards through a perforation 928 in the main bearing block 306. The tube 926 is connected to a joint 930 fixed to the bearing housing 306. The joint 930 applies vacuum 695 to a hole 932 that is drilled into the bearing block 306 and aligned with the ridges 934 of the manifold 720. The hole 932 extends to the top of the ridge 934. In this way, the elastic disk 218 is properly present on the chuck 3 2 2 and will block the airflow into the hole 9 3 2, causing the pressure in the hole 9 3 2 to decrease. This reduced pressure is reflected as a reduced pressure in the conduit 6 9 6. Connect the conduit 6 9 6 to a pressure sensor, such as a pressure sensor similar to the pressure sensor 2 9 9 D (Figure 3 C). The pressure sensor detects the reduced pressure and determines that the spring disk 218 is properly present on the collet 322. If the elastic disk 2 1 8 is only partially on the chuck 3 2 2, or not on the chuck 3 2 2 at all, the airflow inlet hole 932 will not be blocked, and the pressure in the hole 932 and thus the pressure in the duct 696 will not decrease. As a result, the pressure sensor will determine that the spring disk 2 丨 8 is inappropriately present 'or not at all on the chuck 3 2 2, so the grinding operation should be interrupted.

Referring to FIG. 23, the present invention provides a method for controlling the relative movement between the wafer 2006 and the CMP polishing liner 209. This method may include an operation of mounting wafer 2006 on chuck 262 at 1000. It is recalled that the wafer 206 has an axis 214, which may be called an axis of symmetry. The position of this component is described above as the starting position of the wafer axis 2 丨 4. The axis 210 of the polishing pad 209 and the mounted wafer are arranged in parallel

528651 5. In the description of the invention (36), the opposite station H? 4 (which is shown in Figure ΐβ), the method moves to the operation Douchuan II is the rotation axis of the pad. By advancing the pad 20 9 and the side-by-side crystal " σ / this is parallel to the axis of symmetry 2 1 4, as shown by arrow 2 0 9 V in FIG. 1B == ί moves to operation 10 04. As the rotary tool indexer pushes the carrier 208 upward and keeps the chuck 2 62 in a fixed position in the direction of the axis 212 of the wafer carrier m, the advance operation 1 004 causes the pad 209 to apply the abrasive force, the force FP W, On the mounted wafer 206, the axis of symmetry 214 is eccentric. In response to the grinding force FP-W, the wafer 206 has the above-mentioned inclined tendency, so the symmetry axis 214 is easy to move out and parallel to the axis 21 (), which is the rotation of the pad 2 () 9 due to the installation during the advancement period by resistance The tendency of the side-by-side wafers 206 to tilt is to allow the wafers 206 to move parallel to the rotation axis 21o, and to the starting position of the wafer axis 214, the method moves to operation 〇006. The motion along the starting position of the aa circular axis 2 1 4 responds to the force F p n in FIG. 2A, for example, and responds to the operation of the linear bearing 232 by eccentric force. This method can also be moved to operation 08, which is performed by measuring the movement of the wafer 206 parallel to the rotation axis 210 during the pushing operation and the resisting operation to indicate the grinding force (ie, the force FP — W) Value. Then, the operation shown in FIG. 23 is completed. Referring to FIG. 24, another aspect of the present invention provides a method for mounting a wafer 206 to a lapping operation performed by a pad 209 having a lapping surface. From the beginning, 'this method may include the operation of mounting the wafer 206 on the chuck 26 2 to move against the abrasive surface of the pad 20 9. FIG. 1B shows the method for the wafer 20 6. The axis of symmetry 214 is applied eccentrically. The wafer 20 6 is shown in FIG. 14B as having edges, or around, 301 being symmetrical to the axis of symmetry 214. This axis 214 is generally at a right angle to the exposed surface of the pad 209. By providing

528651 V. Description of the invention (37) 'position (Fig. 12A) The buckle 282 surrounding the periphery 301 of the wafer 20 6 to limit the movement of the wafer 206 perpendicular to the axis 214, the method moves to operation 1012. By pushing the storm road surface of the liner 2 0 9 and the wafer 2 6 toward each other, this method moves to operation 1014, so the pad 209 applies a polishing force FP-W to easily tilt the wafer 2 06 and the axis of symmetry 2 1 4 Enter individual locations that are not perpendicular to the abrasive surface. By pushing the exposed surface of the pad 20 9 and the buckle 282 toward each other, this method moves to operation 1 0 1 5 'so the pad 2 9 applies a grinding force FP-W easily tilts the buckle 2 8 2 and the axis of symmetry 288 enters individual locations that are not perpendicular to the abrasive surface. With the linear bearing 2 5 3 resisting the tilting trend of the retaining ring 2 8 2, the method moves to operation

1 0 1 8. This resistance restricts the movement of the buckle 2 8 2 to move the exposed surface perpendicular to the pad 2 09. As mentioned above, in this way the allowable movement of the buckle 282 back stress FP-W (ie, movement parallel to the starting position of the axes 212 and 214) and the chuck 262 and the wafer 206 on the chuck 262 back The allowable movement of the FP-W (that is, the movement parallel to the starting positions of the axes 212 and 214) is the same direction. this

In addition, resistance in this way helps to make reproducible measurements of the eccentric force F P-W. Therefore, with the resistance of operation 1018, the force FP-W applied to the wafer carrier 208 can be accurately measured, as defined above, even if the force FP-R is eccentrically applied to the buckle 2 8 2. The method can also be moved to operation 1019, which is performed during the advancement operations 1014 and 1015 and the resistance operation 1018 by measuring the movement of the wafer 206 parallel to the direction of the rotation axis 2 10. As defined above, this measurement provides an accurate indication of the grinding force, the force FP-W value. Then, the operation shown in FIG. 24 is completed. As shown in FIG. 25, operation 105 may include a second operation 102, providing the plate 260 with a distance from the chuck 262. Operation 1015 may also include sub-operation 1 024.

Page 43 528651 V. Description of the invention (38) The bag 292 is provided between the plate 2 60 and the buckle 282. The operation 1015 can also be performed the operation 1025, and the capsular bag 292 is operated, for example, by using the fluid to swell the capsular bag 292 first. This expansion moves the buckle 282 and the pad 209 toward each other. Referring to FIG. 26, another aspect of the present invention provides a method for relative movement between a circle 206 and a chemical mechanical pad 209. This method can be used to mount wafer 206 on chuck 262. wafer 206 has a grinding axis with axis of symmetry 214 perpendicular to pad 209 and coaxial with carrier axis 212. And a rotating shaft 211 running on the pad 209. With the axis of symmetry 214 of the wafer 206 mounted parallel to the rotation axis 2m of the pad 209, the method moves to operation 1042. By resisting the movement of the abrasive surface of the pad 20 9 toward the wafer 20β, the method moves to operation 1044. A collet support plate 260 is provided for this purpose. The chuck 2 6 2 is movable relative to the chuck support plate 26. Hold the wafer 206 on the chuck 262 by providing a buckle unit (such as the ring 282 and the base 280) to move around the chuck 262 (such as to help place the wafer 206 on the chuck 262, FIG. 12B), The method moves to operation 1 046. The retaining ring 282 may also expose the wafer 206 to the surface of the liner 20 9 for polishing (Figure 14A). By providing the chuck 2 62, the chuck support plate 260, and the retaining ring units (280 and 282) and a plurality of pairs of linear bearing assemblies 23 and 2 3 2 'each component has a bearing shaft provided perpendicular to the gasket 2 009 The ground surface of the bearing housing 254 or 274, each component has a linear shaft 258 or 278 accommodated in one of the bearing housings 254 or 274, the method moves to operation 1048. The first group 252 of the module is between the chuck 262 and the retaining ring units (280 and 282), and the second group 270 of the module is between the chuck 262 and the chuck support plate 260. By holding the chuck support plate 260 in a fixed position along the axis 212, the method moves to operation 1050 to oppose the movement of the abrasive surface of the pad 20 9 toward the wafer 206. another

528651 V. Description of the invention (39) One option is to push the plate 2 60 toward the pad 2 09. In both cases, the pad applies an eccentric grinding force Fp — W with respect to the axis of symmetry 2 1 4 on the mounted wafer 206 and the retaining ring 282. In response to the grinding force FP-w, the wafer 206 and the chuck 262 have a tendency to tilt, so the symmetry axis 2 丨 4 is easy to move out and parallel to the axis 2 丨 〇. See Fig. 27. During the fixed operation 1 052, the first group of components 2 5 2 is effective to restrict the movement of the buckle 2 8 2 to move parallel to the axis of symmetry 2 丨 4, and the operation 1 0 52 implemented. For example, during the fixation of the chuck support plate 260, the second group 270 of the assembly is effective to limit the movement of the chuck 2 62 relative to the chuck support plate 2 60 to move parallel to the symmetry axis 2 丨 4, and Operation 丨 〇 4 is performed. Referring to FIG. 28 ′, the present invention provides a method for controlling the relative movement between the wafer 206 and the ⑽ 卩 = grind pad 20 9. This method may include the operation 1 060 of mounting the wafer 206 on the chuck 2 62 with the exposed surface 204 ^ parallel to the abrasive surface of the pad 209. The method moves to operation 1062 by juxtaposing the rotation axis 21 of the polishing pad 209 and the symmetry axis 214 of the installed crystal circle 206, and the axis is parallel to the starting position defining the wafer 206. By moving the polished surface of the pad 209 and the well-aligned wafers 206 toward each other, and the exposed surface 402 is opposed to the polished surface, this method moves to operation 106, so the force fp — ^ For b214, it is applied eccentrically to the mounted wafer 206. Referring to the drawing, "For example, operation 1 0 6 6 provides an array of linear bearing assemblies 2 5 3 2 6 5 adjacent to the second wafer 20 6. During the movement of operation 1 064, the wafer 206 is substantially restricted by Movement of the starting position and only allowing the mounted wafer 206 to expose the table = 204 moves parallel to the abrasive surface of the pad 20 9, the method moves to operation. The $ method also moves to operation 1 (m, which During the advance operation and the resistance operation, the wafer 206 is measured to expose the surface 204 which is parallel to the pad 209

Page 45 528651 V. Description of the invention (40) Allowable removal of ground surface & surface 204, net amount: move one. This indication that the abrasive force is applied to the exposed surface provides a method to control the relative movement between the adjusting force plate 2 1 8 and the mechanical lining 209. For reference, this method can include operations on iLI :: 8, mounted on the chuck 322, 1 080, elastic disk 218, and at the starting position). With the symmetrical axis 224 of the elastic disk 218 parallel to the rotation axis 2 of the pad 2 0 Θ in parallel, the method proceeds to operation 1082. By pushing the pad 20g parallel to the rotation axis 2i0 (at the starting position I) toward the side-by-side elastic disk 218, this method moves to operation, = the pad 20 9 applies an eccentric adjustment force Fp with respect to the axis of symmetry 224 — C on the loaded elastic disk 218. In response to the adjustment force Fp__c, the elastic disk 218 has a tendency to tilt, so the symmetry axis 224 is easy to move out parallel to the axis 211. During the pushing operation 1 0 8 4, by resisting the inclined tendency of the installed side-by-side elastic disk 2 1 8, the same as the B guard allows the elastic disk 21 8 to move in a direction parallel to the rotation axis 2】], and the '= method moves to Operation 1 〇 8 6. This method may also include operation 丨 008. During advance operation 1 084 and resistance operation 1086, it is performed by measuring the movement of the elastic disk 218 parallel to the rotation axis 21 11 to indicate the adjustment force F p -c Value. According to the present invention, this indication may be an accurate indication as defined herein. Referring to FIG. 31, the present invention also provides a method for controlling the relative movement between the chemical mechanical pad 2 0 9 and the pad adjusting elastic disk 2 8. This method may include the operation 1090 of mounting a spring disk 218 on the chuck 322. The spring disk 218 has an initial axis of symmetry 224 and the spring disk is parallel to the abrasive surface of the pad 209. The pad 20 09 has a rotation shaft 211. Rotating shaft 211 and installation

528651

A good elastic disk 218 is symmetrical to the axis 224, and the method moves to operation 1092. By providing a chuck support plate 308 to oppose the movement of the abrasive surface of the pad 20 9 toward the spring plate 218, this method moves to operation 1 094, and the chuck 322 can move relative to the lost head support plate 308. By providing the chuck 322 and the chuck supporting plate 308 'and the multiple pairs of linear bearing assemblies 304, the method moves to operation 106. Each component 304 has a bearing housing 3 1 6 provided with a ground surface with a bearing shaft perpendicular to the pad 009. Each component 3 04 has a linear shaft 3 2 0 housed in an individual bearing housing 3 1 6. The assembly 304 is between the collet 322 and the collet support plate 308. By holding the chuck support plate 3 08 in a fixed position, the abrasive surface of the pad 209 is opposed to

To move the elastic disk 218, the method moves to operation 1098. Pad 209 relative

An eccentric adjustment force FP_C is applied to the installed elastic disk 2U on the axis of symmetry 224. In response to the adjustment force FP-C, the collet 322 and the elastic disk 20g on the collet 322 have a tendency to tilt, so the symmetry axis 224 is easy to move out parallel to the axis 21m. During the time when the fixed chuck support plate 308 is in the fixed position, the method moves to operation 1098, in which the component 300 is effective to cause the mounted elastic disk 218 to resist the movement of the abrasive surface of the pad 2 0 9 toward the elastic disk 218 . Referring to Fig. 31, the method moves to operation 2000 'to restrict the movement of the collet 322 relative to the collet support plate 3008 = the movement parallel to the axis of symmetry 224. In this way, the surface of the spring disk remains flat / on the abrasive surface. Relative to the chuck support plate by the induction chuck 322

With a restricted movement of 3.08, the method can be moved to operation 20002 to indicate the exact value of the adjustment force F P-C V. Referring to Fig. 3, another aspect of the method of the present invention relates to a method for cleaning the elastic disk 218 for adjusting the mechanical device = grinding pad 209. This method starts by providing openings 903 and 904 in the spring disk 218, through which the fluid 648 can flow

Page 47 528651 V. Description of the invention (42) Operation ^ 〇 卜 30 矣 This method moves to operation 20 32, where the elastic disk is loaded = 2 "and the upper surface and lips are thin on the peripheral edge of the elastic disk 218. 本: Method moves to operation 2034, in which the elastic disk carrier is assembled to the 〇iii20 structure of the chuck body 22, and is supported on the elastic disk with a fully distributed fluid 648. The method moves to operation 2 036, in which the elastic disk 2 18 疋 is horizontally aligned with the surface of the elastic disk carrier and the lip 900 extends from the supporting surface. The method moves to operation 2038, where the interface 9200 and the guide 26 are formed through the plate 308 and the elastic disk carrier 222 Second, the elastic disk support surface to be placed. This method moves to the middle of the operation = body DI water 6 48 is supplied through the elastic disk carrier 220 to the interface 932, so that the structure of the elastic disk carrier 220 (ie, the manifold) can distribute DI. Water 648 is spread on the elastic disk support surface in the lip 900 to infiltrate the elastic disk 218 in the D1 water 6 4 8 in the water storage tank. The supply is such that the d I water 6 4 8 exits from the manifold 7 2 0 to the outer muscle. Move through the perforations 903 and openings 904 in the elastic disk 218. The elastic disk 218 and slowly passes over the lip 900 to form a waterfall and slowly flow out of the chuck 3 ^ 2. In this way, the elastic disk 218 on the chuck 322 is immersed in DI water 648, and the DI water 64j flows through the elastic disk. 218 Washing, or cleaning, the elastic disc 218 ▲ So the elastic disc 218 assists the ideal adjustment of the abrasive pad 209. Mairu, Figure 34, Another aspect of the method of the present invention is for adjusting the abrasive pad This method begins with operation 205, in which a spring disk 218 is mounted on a chuck 322, the axis of symmetry of the spring disk 224 is perpendicular to the abrasive surface of the pad 21 8 and the adjustment surface of the pad 20 Parallel to the grinding surface. This side f moves to operation 20 52, where the rotation axis 211 of the pad 209 is juxtaposed with the symmetrical axis 224 of the installed 5 flat force disc 218, and the axes 224 and 211 are parallel to define the elastic disc.

528651 V. Description of invention (43) m Starting position. The method moves to operation m4, in which the pad 218, the two surfaces, and the adjustment surface of the elastic disk 2 1 8 b are moved toward each other to the adjustment surface of the elastic plate 218 of the mounting device against the abrasive surface of the pad 209. This method is to provide 2 0 5 6 to provide a linear bearing assembly such as 3 10 array 2 6 5 adjacent to the installed elastic disk 2 1 8. FIG. 35. The method moves to operation 2058. During the moving operation, there is a general restriction on movement from the starting position. Only the installed elastic disk 218 with the adjustment surface of the elastic disk 218 is allowed to be parallel to the grinding of the pad 218. move. The method moves to operation 2060, during which the movement is restricted * during the operation 2054, the limited motion is sensed to indicate the precise value of the grinding force FP-C applied to the adjustment surface of the elastic disk 218. Referring to Fig. 36, another aspect of the method of the present invention relates to a method of adjusting a polishing pad. This method starts in operation 270, where the elastic disk 218 is mounted on the chuck 322, the axis of symmetry 224 of the elastic disk is perpendicular to the surface of the pad 218, and the adjustment surface of the pad is parallel to the grinding surface. The method moves to operation 2072, where the rotation axis 21 is parallel to the symmetrical axis 24 of the installed elastic disk 218, and the axes 2 10 and 224 are parallel to define the starting position of the elastic disk 218. The method moves to operation 2074, where the abrasive surface of the pad 218 and the adjustment surface of the elastic disk 2 1 8 are moved toward each other. The method moves to operating the spring disk 218 of the array in which the linear bearing assembly 3 is provided. Referring to FIG. 37, the method moves to operation 2 during the second operation and the second operation is better than the mobile operation 2074. The use of the component 3 10 generally restricts the movement from the starting position, and only the installed elastic disk 2 with an adjustment surface is allowed to be parallel. Move on the abrasive surface. The method moves to operation 208, where the induction is limited. 528651 Fifth, the description of the invention (44) moves to indicate the precise value of the grinding force FP-C applied to the adjustment surface. Referring to FIG. 38, there is shown a graph illustrating how the pressure B applied to the fluid 2 9 3 to the linear motor 2 9 0 can, on the one hand, overlap with the amount (0 L) of the polishing pad 2 9 (FIG. 1B). On the other hand, it varies with the amount of overlap between the retaining ring 282 and the wafer 206. As described above, for example, in order to uniformly grind the exposed area 204R of the wafer 206, a uniform amount of pressure should be applied to the different exposed and contact areas 204R. As the area of the exposed and contact area 204R increases, the force FP W should increase to equalize the amount of pressure. Because the polishing operation was performed on the wafer 206, the polishing pad 002 moved in the direction of the arrow 209H, and the area of the different exposed area 204R was affected by the polishing due to the movement of this polishing pad. The force Fp-w applied to the wafer 206 must be changed precisely. The processing of the round loading signal 264 is performed, and the force of the wafer carrier 208 in the upward direction (see F in FIG. 1B) is adjusted as necessary to provide the wafer 206 and the wafer applied by the polishing pad 2 The circular carrier 208 is an appropriate force FP-w. The form of the graph shown in FIG. 3 can be used to grind pads (OL) between pads 209 (OL) (Figure 1A) on the one hand, and buckles 2 82 and wafer 206 on the other: 'Selection applied to flow fine to straight

Although the foregoing invention has clearly been implemented within the scope of the accompanying patent for the sake of clarity, this specific example should be considered as an example rather than a restrictive one. The details shown here can be modified within the scope of the attached patent. Sacrifice and

Page 528651

In the tool: The first embodiment described in FIG. 1A illustrates the contact originating from eccentricity; the wafer carrier of one embodiment illustrates that two components restrict the main bearing block and the collet ', and the second component restricts the main bearing plate and direction. The pad adjusting head of the second embodiment illustrates that between the disc bearing and the loading unit plate, the present invention will be more clearly understood from the following description and the accompanying reference numerals with similar reference numerals. FIG. 1A is a plane, The figure shows the conventional embodiment in which the second grinding head contacts the wafer carrier, and one of the spring disks carried by each device is in contact with each other: the circle and the center are adjusted by the grinding pad; The central axis is deviated. Figure 1B is a plan view, which depicts the central axis of the carrier and the eccentric force. Figure 2A is an elevation view illustrating the first separated linear bearing structure. — The direction of the relative movement between the bearing plates. FIG. 2B is an elevation view of the relative movement between the plates, illustrating a linear bearing structure for restricting the main bearing seat and the direction of elastic movement; FIG. 3A is a schematic perspective view showing the wafer carrier structure element of the first embodiment Figure 3B shows the bottom of the upper section of the rotary tool indexer (rotary t00l changer; rTC); Figure 3B is a schematic perspective view showing the wafer carrier structural elements of the first embodiment, 'the top of the wafer carrier vacuum chuck; Figure 3C is The outline of the wafer carrier shows the mandrel used to support and supply equipment to the carrier head, and the grinding head in dotted lines. Figures 4A and 4B are exploded perspective views of the first embodiment, illustrated at the bottom of the structural elements in Figure 4B and At the top of the structural element in FIG. 4A;

Page 51,528,651 Simple explanation of the drawings --- Perspective 1 to 5 " is an enlargement of many structural elements shown in the right side of Fig. 4 Figures 5B-1 to 5B-3 are enlarged perspective displays of many structural elements shown in Figure 6A is a plan view of a wafer carrier in which a number of lines of the internal structure are illustrated;

Fig. 6B is a cross-sectional front view taken on line 6B-6B in Fig. 6A. The two main bearing blocks are fixedly assembled with the spring disk bearing and the loading unit plate. The center of the shaft and the main bearing seat is pressed on the load sensor button of the loading unit; FIG. 7 is a cross-sectional front view taken on line 7-7 in FIG. 6A, showing that the main bearing seat is movably connected to the ring bearing Plate, showing the bearing of the flat plate in the cylindrical linear bearing on the bearing seat to limit the mounting of the buckle base plate on the plate. Figure 8 is a cross-sectional view taken along line 8-8 in Figure 6A, showing Installation of the connector of the fluid under grinding; Figure 9 is a cross-sectional view taken along line 9-9 in the figure through a fluid connection, wherein the connector supplies D 丨 water and vacuum to the vacuum head;

FIG. 10 is a cross-sectional view taken along line 10-10 in FIG. 6A, illustrating the separation of the six DI water conduits for the finely washed wafers from the six bases of the retaining ring through the first grinding and loading unit plates. One of the nozzles;… FIG. 11 is a cross-sectional side front view of the elastic disk bearing and the loading unit plate. 4 The flat plate is assembled to the upper part of the RTC by screws;

Page 52 528651 Brief description of the drawing Figure 1 2 A is a cross-sectional view of the enlarged part of FIG. 7 'shows that the buckle base is fully engaged before the CMP operation and the wafer is positioned and positioned on the vacuum chuck; of which Figure 12B is of Figure 12A Zoom in further. FIG. 13A is a cross-sectional view of an enlarged portion of FIG. 7 ', showing the retaining ring is away from the wafer at the disengaged position to help the wafer be removed from the wafer carrier, and FIG. 13B is a further enlarged portion of FIG. 13A. FIG. 14A is a cross-sectional view of an enlarged portion of FIG. 7 'showing the position of the buckle base at the grinding position to help spray DI water to the wafer base while grinding the exposed surface of the wafer, wherein FIG. 14B is a further enlargement of FIG. 14A section. FIG. 15 is a cross-sectional view taken along line 15-15 in FIG. 6A, and illustrates an outlet for removing mud and DI wafer cleaning water from a wafer carrier through a buckle base; FIGS. 16A and 16B are views of the first embodiment An exploded perspective view is illustrated at the bottom of the structural element in FIG. 16A and at the top of the structural element in FIG. 16B. FIG. 17A is a schematic perspective view showing the elastic disk carrier structural element of the first embodiment. (rotary tool changer; RTC) bottom of the upper segment; Figure 17B is a three-dimensional schematic diagram showing the elastic disc carrier structural elements of the first embodiment, illustrating the top of the upper segment of the RTC; Figure 17C is a schematic diagram of the wafer carrier, shown in dotted lines for Mandrel supporting and supplying equipment to the carrier head, and illustrating the grinding head; FIG. 18 is a plan view of the elastic disk carrier, showing the mandrel used to support and supplying equipment to the carrier head, and explaining the grinding head; FIG. 19A is A cross-sectional view taken along line 1 9 A -1 9 A in Figure 18 shows a

528651 The diagram briefly illustrates the vacuum conduit to the chuck to determine whether the spring disk is properly on the chuck; Figure 19B is a cross-sectional view taken along line 19B-1 9B in Figure 18 and used with the chuck Linear bearing; FIG. 20 is a cross-sectional view taken along line 20-20 in FIG. 18, showing a conduit for supplying a spring disk on the DI water purification chuck; FIG. 21 is a cross-sectional view taken along line 21-21 in FIG. Shows the vacuum duct leaving the base of the spring disk carrier; FIG. 22 is a cross-sectional view of the wafer carrier at an angle to the plane of the exposed wafer surface in FIG. 6A, illustrating the supply of DI wafer cleaning water in the buckle base Three of the six DI water nozzles show that the nozzles extend at an angle to the plane containing the carrier axis to guide a portion of the DI water in the circumferential direction of the retaining ring; Figures 23 to 37 depict operations in different methods of the invention And FIG. 38 is a graph illustrating how the pressure applied to the motor for the retaining ring varies with the amount of overlap between the polishing pads on the one hand, and with the retaining ring and wafer on the other hand The amount of overlap between them varies. [Symbol description] 2 0 0-1 ~ 畐 J opening CMP system 2 0 2 ~ Grinding head 204 ~ Wafer exposed surface 204R ~ Specific area of exposed surface

Page 528651

Brief description of the drawing: 20 6 ~ wafer 2 0 8 ~ wafer carrier 2 0 9 ~ grinding profile 20 9H, 20 9R ~ arrow 2 1 0 ~ coaxial 2 1 1 ~ coaxial 2 1 2 ~ Central axis of the wafer carrier 2 1 4 ~ Central axis of the wafer 216 ~ Elastic disc exposed surface 2 16R ~ Specific area of the elastic disc exposed surface 2 1 8 ~ Elastic disc 2 2 0 ~ Pad adjustment head 2 2 2 ~ Liner The central axis of the pad adjustment head 224 ~ the central axis of the elastic disk 2 3 0 ~ linear bearing structure 2 3 2 ~ linear bearing structure 233 ~ arrow 2 5 0 ~ main bearing seat 2 5 2 ~ first set of three linear sleeve bearings 2 5 3 to linear bearing 254 to sleeve 256 to sleeve bottom 2 5 8 to bearing shaft 2 6 0 to spring disk bearing and loading unit plate

Page 528 651

Brief description of drawings 262 ~ Vacuum chuck 2 6 3 ~ Loading unit 2 64 ~ Wafer loading signal 2 6 5 ~ Linear bearing array 2 6 6 ~ Circular guide 2 7 0 ~ Second set of three linear bearings 2 7 2 ~ Linear bearing 2 7 3 ~ Linear bearing 274 ~ Sleeve 2 7 6 ~ Open bottom 2 7 8 ~ Bearing shaft 2 7 9 ~ Buckle bearing plate 2 8 0 ~ Buckle base 2 8 1 ~ Screw 2 8 2 ~ Buckle 283 ~ Drilling hole 284 ~ Outer cylinder surface 2 8 5 ~ Screw

2 8 6 ~ Central axis of the buckle base 2 8 8 ~ Central axis of the buckle 2 9 0 ~ Linear motor 292 ~ Air bag 2 9 3 ~ Airflow 294 ~ Inlet

P.56 528651 Brief description of the drawings 2 9 6 ~ Annular groove 2 9 7 ~ Porous layer 297P ~ Macropore 298 ~ Carrier film 2 9 9 ~ Upper surface of the buckle 299D ~ Pressure detector 3 0 1 ~ Wafer 3 0 3 ~ inner wall of the retaining ring 3 0 4 ~ linear bearing assembly

3 0 6 to main bearing seat 3 0 8 to spring disk bearing and loading unit plate 3 1 0 to linear bearing structure 3 1 2 to arrow 3 1 4 to linear bearing 316 to sleeve 318 to open bottom 32 0 to sleeve shaft 3 2 2 ~ chuck

324 ~ loading unit 326 ~ elastic disc loading signal 338 ~ equipment for other CMP operations 3380 vacuum chuck equipment 3 38PS ~ equipment for sensing elastic disc on chuck 338PP ~ equipment for cleaning elastic disc

Page 57 528651 Brief description of the drawings 338LCP ~ Equipment for loading unit 3 4 0 ~ Rotary tool indexer 342 ~ Upper section 344 ~ Lower section 3 4 6 ~ Mandrel 348 ~ Vacuum or DI water 350 ~ Duct 352 ~ DI water 354 ~ Catheter

358 ~ duct 360 ~ belt ring 361 ~ connector 3 6 2 ~ hollow center of upper section 3 6 6 ~ bottom of upper section 3 6 8 ~ connector 3 7 0 ~ 0 ring 3 7 2 ~ nozzle 374 ~ connector

376 ~ connection 3 7 8 ~ seal 3 8 0 ~ 0 ring 382 ~ manifold nozzle 384 ~ connection 3 8 6 ~ seal 塾

P.58 528651 Brief description of drawings 3 8 8 ~ 0 ring 3 9 0 ~ connector 3 9 2 ~ connector 39 3 ~ conduit 3 9 8 ~ electrical contact 40 0 ~ connector 402 ~ connector

4 0 4 ~ screw 4 0 6 ~ connector 408 ~ conductor 410 ~ loading unit amplifier 412 ~ pipe 4 1 4 ~ perforated 41 6 ~ tubular connector 4 1 8 ~ connector

420 ~ manifold 4 2 2 ~ upper surface 426 ~ mud 430 ~ pipe 434 ~ inlet 4 3 6 ~ inner wall 4 3 8 ~ side wall 440 ~ space 442 ~ channel

P.59 528651 Brief description of drawings 444 ~ Nozzle 446 ~ Underside of wafer 448 ~ Arrow 452 ~ Slot 454 ~ Embankment 45 6 ~ Out α 458 ~ Gasket 46 0 ~ Ring lip 462 ~ Entrance wall 464 ~ Out α cavity 46 6 ~ Out π hole 640 ~ Rotary tool indexer 642 ~ Upper section 644 ~ Lower section 646 ~ Mandrel 648 ~ DI water 6 50 ~ Conduit 660 ~ Belt loop 6 6 1 ~ Releasable connector 666 ~ Upper section 668〜 〇〇672〜 Connector 674〜 680〜0 形 环

Page 60 528651 Brief description of drawings 69 5 ~ Vacuum 69 6 ~ Conduit 6 9 8 ~ Electric contacts 70 0 ~ Connector 7 0 2 ~ Interface 7 0 4 ~ Screw 7 0 6 ~ Interface 708 ~ Conductor 7 1 0 ~ Loading unit amplifier 712 ~ conduit 7 1 4 ~ perforation 7 1 6 ~ tubular connector 7 1 8 ~ interface 72 0 ~ manifold 722 ~ upper surface of the collet 9 0 0 ~ lip 9 0 2 A ~ dish-like layer 90 2B ~ dish-like layer 9 0 3 ~ perforated 9 2 0 ~ interface 9 2 2 ~ hole 9 2 4 ~ nozzle 926 ~ tube 9 2 8 ~ perforated

Page 61 528651 Brief description of drawings 930 ~ connector 9 3 2 ~ hole 934 ~ bulge of manifold _circle 1

Claims (1)

528651 VI. Application Patent Scope 1 · A device for mounting semiconductor wafers, which is cooperated with a chemical mechanical polishing pad of a green rotating shaft. The wafer has a wafer shaft, and / 嗲 includes: ^, a coupler section, having Central axis; -Clamp: used for mounting wafers, starting from the wafer axis, the central axis is coaxial and flat on the suspect axis. The adaptor is adapted to withstand the force from the pad, and the grinding force is parallel to the rotation axis. It is eccentric with respect to the wafer axis and tends to tilt the chuck, so that the wafer tends to tilt in a coaxial relationship with respect to the wafer axis; and Τ 于 中 "车 由 t 一 " linear bearing assembly, which has [ 5] 中 2 ^ 依 έ 彡 士 no * mandrel is positioned in a fixed position! A second unit along the ^ as early as 70 'by the coupler and the second unit is fixed to the chuck and is movable relative to the first unit, The two-unit cooperation resists the tendency of the chuck and the wafer to tilt, so the central axis and the central axis are coaxial and parallel to the rotation axis ... During the 'movement of the wafer axis and the device 2, ... To install a semiconductor wafer reactor, in a linear bearing set On the first unit of the piece, the first unit of the linear bearing assembly relative to the linear axis located at the time of the induction grinding force provides an accurate indication of the amount of eccentric force from the liner. Device, where the first unit of a linear bearing assembly for mounting a semiconductor wafer according to item 1 of the scope of patent application includes at least one elongated bearing shaft flat 6. The scope of the patent application extends to the central axis; and the linear bearing assembly section _ An order extends to the central axis and contains 2: an elongated bearing device, in which the straight stem circumference of item 1 is used to install a semi-progressive device including: brother linear car bearing assembly, the device is a buckle assembly, jealous in w ί The second unit moves, and; is relative to the axis of the chuck and the circular axis is coaxial, so that the buckle group 有: has a buckle symmetry axis and a central force, the ring force is relative to the buckle symmetry t should bear the ring assembly from the pad, so that the buckle assembly is easy to tilt, 'tilts the tilting buckle coaxially; and, f, said the starting element of the round shaft and t mandrel; the piece' has a fixed To the buckle assembly and the 1-unit and the third single to cool "For * ::: For the fourth unit during the movement, the axis 4 = ::::: The line driving position is between the buckle assembly and the first unit. And with respect to the collet thereon relative to the wafer. Α Apparatus 6 ·· Introduction-According to the first scope of the patent scope for splitting semiconductor wafers, page 64 52865i Patent scope of application-a catheter system, which extends through the link 'the catheter system alternates to lower the body, To alternately hold the wafer to the clamp θ, wherein the chuck includes a vacuum clamp, and the force is distributed throughout the bottom surface of the upper wafer into a porous portion formed by a large hole; and a connector for connecting the catheter ^ 7 · According to The fifth range of patent application is broken, where the linear drive is a pneumatic-catheter system that extends through Lian Niu to adapt the catheter system to be selected to drive linearly relative to the 8 on the cool head. 'In which a space is provided for the buckle to assemble the periphery of the cool head to have a portion and wherein at least one nozzle is formed around the teaching chuck, the device enters a catheter system and extends through a linear bearing assembly to the nozzle, the Guide the fluid directed around the head. 9 · According to the eighth device of the scope of the patent application, wherein the buckle assembly is connected to an outlet duct and extended freely in the space of the buckle assembly rotating space and the pressure of the knot part and the pressure carrying head and the cleaning head, which have a tube and a mounting head. From the manifold system to the manifold item, it is used to install the device. The knotter part and the wafers with different pressures are used to install the ring assembly and the sandwich wafer. The clamp ring assembly includes a step: And the tube system is assembled through a linear bearing fluid and liquid flow chuck; the semiconductor wafer set for distributing the lower part of the porous part on the tube further comprises a fluid bearing through a linear bearing to a ring assembly. It is set between the semiconductor wafer heads, and the head protrudes from the space, extending to the position where the space surrounds the first and the first to carry the semiconductor wafer by the nozzle and the position of the buckle assembly; The middle and mid-direction of the set is used to hold the part to rotate the radial outward fluid, and the spin Page 65: > 51 ', patent application scope Inflow catheter. The device, ^ $ Shenqing Patent Scope Item 1 is used to install a semiconductor wafer linear wheel bearing, two or two linear bearing shafts, and the second unit contains a plurality of component linear shafts: single 7 :: accommodation Middle-to-piece bearing housings * Centered in a circular path ::: The linear bearing units are spaced at an interval around the head and the inclination of the wafer. The linear axis & list = for mounting the semiconductor wafer in the first item of the range. / Knife-open linear bearing units contain at least three separate units ::! The first patent includes the first diameter, the first unit, and the second unit and the second linear axis * single-element spaced ring, and an array around the center of the vehicle. 13 'Eagle has a shaft whose diameter is smaller than the first diameter of the wafer. d. A chemical mechanical polishing device, ^ a, a conductive wafer, the device includes :, for a semi-abrasive mold with a wafer axis, with a rotating cart; And leave the rotation axis, the mz pad, in which the wafer axis is parallel to the turning axis and supplied by ° Hai lining &-grinding force for wafer axis eccentricity; cool head carrier, assembled to tilt > tilting force . 1. The chuck was made on the chuck due to the eccentric grinding force. =, Chemical mechanical polishing equipment 528651 6. The scope of the patent application is set, in which the collet bearing seat axis is parallel to the movement of each of them. The linear axis collet bearing bearing should be in parallel. • The collet bearing axis and device Although the grinding force cannot be further improved, it has a flat assembly ring unit. The linear axis is from the linear element and the clamp 17. The grinding force when the sensor is applied is based on the clips. A rotating shaft is arranged according to the body assembly between the bodies; and the body is further assembled in the seat, and the individual grinding force is applied to the rotating shaft. The patented fan head carrier further includes a main bearing block, which is mounted on a linear main bearing block eccentrically. The induction applied patent fan head carrier is assembled with a bearing ring shaft of a round shaft and surrounds each of the wafer buckles and the motion contained therein. An array of approximately patent-applied bearing housings. Each bearing housing has a bearing housing provided with a linear bearing shaft accommodated in the array and the shaft resists the tilting force. The collet bearing housing is opposite to the collet bearing shaft. The item of chemical mechanical polishing is equipped with a linear bearing support plate to carry and move with an array of bearing seats. The bearing support plate is located at the position where the eccentricity is relative to the linear bearing support plate. The device also provides eccentric grinding force. The precision refers to the chemical mechanical polishing of item 13 equipped with a plurality of linear bearing seats, each shaft ^ seat shaft; and the chuck carrier is further „buckle ring unit, the wafer buckle 2 linear bearing housing The linear bearing shaft on the single 7G is used to move relative to the chuck, and the inner / axis of the shaft resists the tilting force, so the buckle ring is parallel to the wafer car. Mechanical grinding equipment Page 67 528651 VI. Scope of patent application The plate of which is to be buckled, the device is a motor, and the ring unit further includes a plate and a crystal chuck. The chemical-mechanical polishing device includes: a pad having a wafer buckle unit rotating, and an eccentric grinding force being received by the surrounding element; the unit is a chuck for mounting the wafer having the chuck to be equipped with a first And the second set of separate cavities are coaxially assembled with the rotating shaft to support a linear bearing shaft round buckle unit phase 18 · —a kind of conductor wafer, between which a grinding-lined round buckle unit is used to move the crystal A device for the shaft; and arranged to have a ring car relatively; to apply wafers parallel to and away from the pad; a pair of wafer cars by a bearing seat, a cavity shaft of each group; a semi-chuck with a wafer shaft moves, the The eccentric grinding force of the wafer axis of the unidirectional rotating shaft, each bearing seat has a chuck carrier, and the individual cavities installed in the first group of bearing seats are eccentric by the eccentric grinding force, and the chuck is in line with the first group of linear bearing shafts. , The cavity accommodated by the shaft responds to the rotation shaft; and the second set of bearing seats is set by the eccentric early element relative to the inside, and the individual straight lines are formed on the chuck's first bearing for the chuck carrier The axis and the first group have a tilting force, so the movement is only parallel to the linear bearing shaft of the rotation group. In the individual cavity of the rotary cavity, the grinding force caused by the movement on the chuck only includes according to the patent application step: on the unit, the other The second inclination of the linear bearing car is parallel to the rotation axis on the unit. The chemical-mechanical grinding device around item 18 This shaft is accommodated in the second and second groups of chambers. Page 68 528651 VI. Scope of patent application A loading unit is installed on the chuck carrier and is located in the clamped position '. Although the grinding force is eccentric, the loading unit also provides accurate indication of deviation. 20. The chemical mechanical device according to item 18 of the scope of patent application, further comprising: a motor, the movable retaining ring unit located on the chuck carrier and the wafer retaining ring unit relative to the chuck. 21. A method for controlling a wafer and a chemical polishing pad, comprising the following operations: mounting a wafer on a chuck, the wafer having an axis of symmetry to symmetric the rotation axis of the pad with the mounted wafer The axis is paralleled; the pad and the mounted wafers are pushed toward the rotation axis and the symmetry axis to cause the pad to decenter with respect to the symmetry axis to the mounted wafer. In response to the grinding force, the The tendency of the crystals makes the symmetry axis tend to move out of parallel to the rotation axis. The tilting of the parallel wafers during the advancing operation prevents the wafer from moving parallel to the rotation axis. 22. The method for controlling relative movement between abrasive pads according to item 21 of the scope of patent application, further comprising: > measuring the movement of the direction parallel to the rotation axis during the pushing operation and the resisting operation to accurately Indicates grinding force. 23 · —A method for controlling the relative movement between the chemical abrasive pad and the approximate circle, including the following operations: The head-contacted centripetal grinding force grinding chamber is used to move the relative movements in parallel to close this The application of the grinding circle parallel to the spiral has a tilted relationship; and the tendency that the wafer and the chemical wafer are in parallel at the same time. Pad grinding crystal 528651 6. The scope of the patent application. Setting the wafer. The wafer has a pad 4 亍 to define the crystal. The set wafer is deviated from the grinding force on the axis of symmetry. The starting position and movement are provided by the movement operation. And only allow movement; and determine the net value of crystal power. 24. A device, which is equipped with a joint, an adjustment, a chuck axis, and parallel to the force system and the swivel chuck to start the coaxial close circle to make the wafer symmetry axis, The exposed surface of the wafer is applied centrally during the removal and aligning of the linear axis, and the installed surface exposes the outline and the installation orientation; the polished surface and the surface of the pad are inclined against the polishing force. The round surface is parallel to the rough grinding surface and has a rotation axis. A good wafer symmetry axis is juxtaposed, so that the wafers mounted flat on the axis face each other, so that the grinding force of the pad is installed, so the pad is relatively opposed to the installed surface. On the wafer, in response to this tendency, the exposed surface tends to move away from the grinding surface in a parallel relationship; the array is adjacent to the mounted wafer, which effectively limits the removal of the starting position and the exposed surface is parallel to the grinding surface The allowable amount of movement of the circle to indicate the position of the abrasive seed on the exposed surface for adjusting the chemical mechanical abrasive pad with a rotating shaft includes: a device part having a central axis; an elastic disk having an elastic disk Axle; used to install the elastic disk, to take six ships 0 Μ λ +1 + the elastic disk car from the start and the central axis co-rotating the shaft, so that the chuck suitable storage system is _ A τ _ Ying Chengwen from the grinding of the pad Force, the rotation axis is parallel and relative to the bomb six, so the elastic disc is apt to be eccentric relative to π, and it tends to tilt; Page 70 528651 VI. Patent application scope Ershi line bearing assembly, * There is a first unit fixed to the coupler and along the coupler; in a fixed position, the assembly has a fixed to the chuck and opposite to the first The second unit of the unit is movable, the first and second m anti-chucks and the elastic disk tend to tilt, so the second unit and the clamp ί: During the movement of the elastic disk relative to the first unit, the elastic disk shaft is kept at the center axis. Co-axial and parallel to the axis of rotation. '、 The Zhihua 2-5 machine please use the device in the 24th scope of the scope to adjust the mechanical grinding pad with a rotating shaft to further pack people. The induction is' installed in the linear bearing assembly. When pre-eccentric grinding force is applied, the linear bearing is located at the position of the second unit of the induction bearing assembly, although it comes from the liner: = The linear axis sensor also provides the amount of eccentric force from the pad to = the eccentric force, which is 26 · The chemical mechanical polishing pad device according to Item 24 of the scope of patent application, wherein: the first unit includes at least one row extending to the central shaft; the first unit includes at least one row extending to the center shaft; and The second unit of the module includes at least—an extended bearing housing bucket 2 extending to the central axis and containing at least one bearing shaft. 7 · According to the chemical mechanical polishing pad device of the 24th scope of the patent application, further + "° It has a rotating shaft-catheter system, which extends through the coupling; =,:, pieces to the chuck, the catheter system passes the existence of the elastic disk on the chuck of the linear bearing group with reduced pressure. High-w fluid for sensing 2 8 · According to item 24 of the scope of the patent application, used to adjust the device with a rotating shaft 528651 6. The scope of the patented chemical mechanical polishing pad, wherein the elastic disk includes a To match the perforated plate on the upper surface of the pad, the plate is provided with a perforation extending approximately two times, the surface, the device further includes: ^ & the system 'extends through the coupler section and through the linear bearing assembly to the chuck 4 guide The system carries fluid under pressure; and the cool head has a manifold connected to the conduit system, which is used to distribute the fluid to almost all perforations to uniformly purify the spring disk. 2 9 · According to Shenyan patent scope No. 2 4 The device for adjusting a chemical mechanical polishing pad with a rotating shaft, wherein: the first single το includes a plurality of linear bearing shafts, and the second unit includes a plurality of linear bearing housings, and one of the shafts is accommodated in one of the bearings In the seat to form separate linear bearing units, the linear bearing units are evenly spaced around the circle and the center of the yt diameter is located on the same axis; the separate linear bearing units Yuan cooperation resists the tendency of the collet and the elastic disc to tilt. 30. A method for controlling the pad to adjust the relative movement between the elastic disc and the chemical mechanical polishing pad, including the following operations: · Mounting the elastic disc on the collet, The elastic disk has a shaking pump, and the rotation axis of the pad and the symmetrical axis of the installed elastic disk are juxtaposed in parallel to advance the pad and the parallel mounted rotating axis and the symmetrical axis of the installed elastic, In order to cause the pad relative to _σ 节 to be parallel to the joint force to the installed elastic disk, in response to the adjustment of the adjustment bias, the tilt of the symmetry axis tends to move out of the disk 4 elastic disk system; And Yang Yi suspected that the axis of rotation is parallel _ II Page 72 528651 6. The scope of the patent application allows the elastic disk to be 3 during the advance operation. According to the Shenli disk and chemical machinery, it includes: The square that runs on the rotation axis during the advance operation. A kind of grinding surface and a rotating shaft of an elastic disk pad by relative movement between the disks. During the period, the tilting tendency of the parallel elastic disks installed against the installation is moved in the direction parallel to the rotation axis. The method of controlling the relative movement between the pads and the abrasive pads in the patent scope item 30 is further included to measure the movement of the parallel elastic disk installed in the horizontal direction during the resistance operation to accurately indicate the value of the adjusting force . A method for controlling a chemical mechanical polishing pad and a pad adjusting elastic force, including the following operations: On the chuck, the elastic disk has a symmetry axis perpendicular to the pad adjusting surface and parallel to the grinding surface, and the pad has a rotation axis for rotating the pad. Parallel to the axis of symmetry of the installed elastic disk, make the axis parallel to define the initial orientation of the elastic disk; move the abrasive surface of the pad and the adjustment surface of the elastic disk toward each other to resist the adjustment surface of the installed elastic disk The grinding surface of the pad, the lining eccentrically applies an adjustment force to the installed elastic disk relative to the axis of symmetry. In response to the adjustment force, the chuck and the installed elastic disk have a tendency to tilt, resulting in a tendency to adjust the surface. The relationship between the removal of the starting position and the parallel to the grinding surface; and the provision of an array of paired linear bearing components adjacent to the installed elastic disk. During the movement operation, the component is effective to substantially limit the removal of the starting position. Movement does not allow the mounted spring disk to move with its adjustment surface parallel to the abrasive surface. Page 73 528651 VI. Patent Application Range 33. The method for controlling relative movement between a chemical mechanical polishing pad and a pad adjusting elastic disc according to item 32 of the patent application range further includes: During operation, limited movement is sensed to indicate the precise value of the abrasive force exerted on the adjustment surface. 34. The device for adjusting a chemical mechanical polishing pad with a rotating shaft according to item 24 of the application, wherein the plurality of separate linear bearing units includes at least three separate linear bearing units. 35. The device for adjusting a chemical mechanical polishing pad with a rotating shaft according to item 24 of the scope of patent application, wherein the elastic disk is provided with a first diameter, and the first unit and the second unit include a linear bearing unit uniformly An array spaced around the central axis, each linear bearing unit having a shaft whose diameter is smaller than the first diameter of the wafer. Page 74