TW522218B - Gap adjustment apparatus and gap adjustment method for adjusting gap between two objects - Google Patents

Abstract

A first stage and a second stage are disposed to face each other. A first object is fixed on the first stage. A first displacement sensor attached on the first stage is used to measure a distance extending from the first displacement sensor to a plane disposed in front of the first displacement sensor. A second object is fixed on the second stage. A second displacement sensor attached on the second stage is used to measure a distance extending from the second displacement sensor to a plane disposed in front of the second displacement sensor. A moving mechanism is provided to move one of the first stage and the second stage, with the movement of one stage being relative to the other stage.

Description

522218 A7 ___B7_ V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a pitch adjusting device and a adjusting method, and particularly to a distance between a wafer and a photomask suitable for X-ray lithography and electron beam exposure. Adjusting distance adjusting device and method. [Preceding technology] X-ray lithography and electron beam exposure. Usually, a photomask is arranged on the surface of the wafer to be exposed at a slight interval, and the surface of the wafer is exposed through the photomask. In order to improve the resolution and positioning accuracy, the distance between the wafer and the reticle must be precisely controlled. Especially when the pitch is too large, the penumbra blur resolution is reduced and the positioning accuracy is also reduced. A method and combination of image processing using a high resolution camera. A method used after a high resolution camera and an electrostatic capacity sensor is well known as a method for measuring the distance between a wafer and a photomask. [Problems to be Solved by the Invention] Since a capacitance sensor and a high-resolution camera are expensive, once the pitch measuring method using these is adopted, the entire device becomes expensive. In particular, a capacitance sensor capable of measuring a pitch of less than 50m is very expensive. In addition, in order to capture a pitch of 20 / z m or less, an expensive lens is required. In addition, a high resolution camera system requires a large installation space. Therefore, miniaturization of the exposure device becomes difficult. An object of the present invention is to provide a distance adjusting device capable of reducing cost and / or miniaturization. This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) _ 4 _ I -------- ^^ installed-(Please read the precautions on the back before filling this page) Order the Ministry of Economic Affairs Printed by the Consumer Property Cooperative of the Intellectual Property Bureau 522218 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The sensor is located on the front side of the second displacement sensor, and measures the distance between the second displacement sensor and the sensing reference plane of the vortex current sensor, and drives the moving mechanism so that the main surface of the first object is located The front of the second displacement sensor measures the distance from the second displacement sensor to the main surface of the first object, and drives the moving mechanism so that the target plate is located on the front of the vortex current sensor. , Measuring the distance between the sensing reference plane and the target plane. The difference between the distance from the first shift sensor to the reference plane of the target and the distance from the first shift sensor to the main surface of the second target can be known. The difference in height from the second reference plane. Similarly, it is possible to know the difference between the height of the sensing reference plane and the principal surface of the first target object calculated from the first reference plane. From the difference information and the distance between the sensing reference plane and the reference plane of the target, the distance between the main surface of the first object and the main surface of the second object can be obtained. Due to the small size of the eddy current sensor, the eddy current sensor can be set at a predetermined position even when the device does not have sufficient space. In addition, since the eddy current sensor is relatively inexpensive, the cost of the device can be reduced. According to another aspect of the present invention, there is provided a pitch adjustment method including fixing a first surface of a first object to a first reference plane so that a main surface of the first object is parallel to the first reference plane. The first step on the first stage of the surface; and the second stage defining the second reference plane parallel to the first reference plane, so that the main surface of the second object is applied to the paper size China National Standard (CNS) A4 Specification (210X297mm) ~ " — (Please read the precautions on the back before filling this page)

_ 522218 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (4) The second process of fixing the second object in parallel with the reference plane of the place; it is installed in pursuit of or adjustment in the aforementioned The third relationship between the height calculated from the first reference surface and the height from the first reference surface to the main surface of the first target object of the eddy current sensor on the first stage. Process; and the pursuit or adjustment of the reference plane of the target plate of the vortex current sensor mounted on the second stage, the height from the second reference plane and the distance from the second reference plane to the aforementioned The fourth step of the relationship between the height of the main surface of the second object; and measuring the distance from the sensing reference plane of the vortex current sensor to the reference plane of the target plate so that the measurement result approaches the target and adjusts the first The fifth step of the interval between the first stage and the second stage. In the third step, the relationship between the height from the first reference plane to the sensing reference plane and the height from the first reference plane to the main surface of the first object can be found. In the fourth step, the relationship between the height from the second reference plane to the target plane of the target and the height from the second reference plane to the main surface of the second object can be found. If the distance from the sensing reference plane to the target plane is known, the distance between the main surface of the first object and the main surface of the second object can be pursued. According to another aspect of the present invention, a gap adjusting device is provided. The gap adjusting device includes: a mask fastener for fixing and holding a mask forming a mask pattern; and holding the mask fastener so that the mask button can be adjusted. A horizontal measuring mechanism in a first direction perpendicular to a surface forming a mask pattern of a mask fixed to the mask fastener; a mask stage supporting the aforementioned first horizontal measuring mechanism; and a wafer Keep the exposed surface of the wafer fastener relative to the aforementioned photomask; and enable the aforementioned wafer fastener to face the aforementioned first direction. This paper size applies Chinese National Standard (CNS) A4 specification (210 × 297 mmΊ) ^ (Please read the back first (Notes for filling in this page)

Installation * — Order 522218 A7 B7 V. Description of the invention (5) (Please read the precautions on the back before filling this page) The second mobile level measuring mechanism, and the wafer stage supporting the aforementioned second level measuring mechanism; And a first distance sensor mounted on the photomask stage and capable of measuring a distance in the first direction with respect to an exposed surface of a wafer fixed to the photomask fastener; and A wafer stage, and measuring a second distance with respect to the first direction distance to the photomask surface fixed to the photomask fastener and a second distance with respect to the first direction distance to the first distance sensor sensor. When the distance from the second distance sensor to the first distance sensor is set to D a, the distance from the second distance sensor to the mask surface is set to DB, and the distance from the first distance sensor to the exposed surface of the wafer When the distance is set to DD, the distance between the mask and the wafer is given by DD-(DA-DB). The measurement 値 and the target 此 of this interval are compared, and by operating the first horizontal measurement mechanism or the second horizontal measurement mechanism, the interval between the mask and the wafer can be adjusted so that D D-(D A-D B) approaches the target 値. In addition, the distance between the mask and the wafer can be measured relatively inexpensively and with high accuracy. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. According to another aspect of the present invention, a method for adjusting a gap is provided. The method includes a first surface of a first measurement object and a second surface of the second measurement object. The process of arranging the first and second measurement objects with the two surfaces facing each other perpendicularly to the first direction, and arranging the measurement from the first distance sensor to the second distance with respect to the measurement A step of measuring the distance D a in the first direction of the sensor; a step of measuring the distance D b in the first direction about the second distance sensor to the surface of the first measurement object; and a step of measuring the first distance sensor The process of the distance Dd from the first direction to the second surface of the second measurement object; applicable to this paper scale. National Standards (CNS) A Private Viewer (210X297 Public Manager) 7q. 522218 A7 ___ B7 V. Description of the invention (6) and a step of moving at least one of the first and second measurement objects in the aforementioned direction so that Dd-(Da-Db) approaches the target 値. (Please read the notes on the back before filling out this page) When the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs printed other viewpoints of the present invention, a gap adjusting device is provided. The gap adjusting device has: A first holding member that fixes and holds the first measurement object; the first holding member that holds the first holding member and is perpendicular to a surface of the first measurement object that is fixed to the first holding member; A first level measuring mechanism for moving the first holding member; a first stage supporting the first level measuring mechanism; and a second measurement object having a second surface held so that the second surface is opposite to the first surface A second holding member on the surface; a second horizontal measuring mechanism capable of moving the second holding member in the first direction; a second stage supporting the second horizontal measuring mechanism; and a second stage mounted on the first A stage capable of measuring a first distance sensor in the first direction with respect to a second surface of a second measurement object fixed to the second holding member; and a stage mounted on the second stage, It is possible to measure the distance to the first direction of the first surface of the first measurement object fixed to the first holding member and the second distance perception to measure the distance to the first direction of the first distance sensor. Device. When the distance from the second distance sensor to the first distance sensor is set to D a, the distance from the second distance sensor to the surface of the first measurement object is set to D b, and from the first distance sensor to When the distance between the non-exposed surface of the second measurement object is DD, the distance between the first measurement object and the second measurement object is given as DD-(D a-D b). Compare the measurement (target) of this interval with the paper size of the first level measuring mechanism or the second level measuring machine to the Chinese National Standard (CNS) A4 specification (210X297 mm) -9-522218 Intellectual Property Bureau, Ministry of Economic Affairs Printed by employee consumer cooperative A7 _______B7_ V. Description of the invention (8) The process of measuring the distance D a from the second shift meter to the second measured surface with the second shift meter; and the second shift with the second shift meter A step of measuring the distance DB from the second shift meter to the simulated measured surface whose position is fixed relative to the first shift meter; and the distance from the first shift meter to the simulated measured surface D c, the aforementioned distances DD, D a, and D b are calculated as 0 + 8. (D b + D c), a step of obtaining the distance between the first measured surface and the second measured surface. [Embodiment of the invention] Fig. 1 shows the outline of the X-ray exposure apparatus according to the first embodiment of the present invention. The wafer stage 1 defines a virtual wafer reference plane 3. The photomask stage 2 is a reference surface 4 defining a virtual photomask. The wafer stage 1 and the photo stage 2 are arranged to face each other. The wafer reference plane 3 is parallel to the mask reference plane 4. A wafer holder 5 is mounted on the wafer stage 1 by a moving mechanism 16. The moving mechanism 16 is capable of moving the wafer fastener 5 toward the normal direction of the wafer reference plane 3. The wafer fastener 5 is fixed by holding the wafer 10 to be exposed. The exposure surface (main surface) of the wafer 10 that is attracted to the wafer fastener 5 faces the photomask stage 2 and is parallel to the wafer reference plane 3. The wafer-side laser displacement sensor 6 is mounted on the wafer stage 1. When the reflecting surface reflecting laser light is arranged parallel to the mask reference surface 4 and is arranged on the front side of the wafer-side laser shift sensor 6, the wafer-side laser shift sensor 6 measures distance. The measurement error of the laser shift sensor 6 is 1 // m or less. This paper size applies Chinese National Standard (CNS) A4 specification (210X 297 mm) _ 1 _ (Please read the precautions on the back before filling this page)

Binding and ordering 522218 A7 B7 V. Description of the invention (9) (Please read the precautions on the back before filling out this page) The photomask fastener 7 is installed on the photomask stage 2. The mask fastener 7 is fixed to a mask 11 for X-ray exposure. The mask surface of the mask 11 held by the mask fastener 7 faces the wafer stage 1 and is parallel to the mask reference surface 4. The mask-side laser displacement sensor 8 is mounted on the mask stage 2. When the reflecting surface reflecting laser light is arranged parallel to the wafer reference plane 3 and is arranged on the front side of the mask-side laser shift sensor 8, the mask-side laser shift sensor 8 series measures the reflecting surface distance. The measurement error of the mask-side laser shift sensor 8 is 1 / z m or less. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the vortex current sensor 20 is mounted on the wafer stage 1 through the regulator 21. The target plate 2 5 for the eddy current sensor is mounted on the photomask stage 2 via an adjuster 26. The vortex current sensor 20 has a sensing reference plane 22 parallel to the wafer reference plane 3. The target plate 2 5 has a target plate reference piece 27 parallel to the mask reference surface 4. When the target plate 25 is placed on the front side of the vortex current sensor 20, the vortex current sensor 20 can measure the distance from the sensing reference surface 22 to the target reference surface 27. The adjuster 21 adjusts the height of the vortex current sensor 20 from the wafer reference plane 3. The adjuster 2 6 adjusts the height of the target plate 25 from the mask reference surface 4. For example, a sensor from the E X-5 0 0 series of K E Y EN C E Co., Ltd. may be used as the vortex current sensor 2 0. The decomposition energy of E X — 5 0 0 series of perceptrons is 0 · 3 // m ~ 3 · 0 // m. Alternatively, a metal plate having a thickness of 0.5 mm or more can be used as the target plate 25. The moving mechanism 1 5 is to make the wafer stage 1 face to the wafer reference plane 3-12-This paper size is applicable. National National Standard (CNS) A4 specification (210X297 mm) 522218 A7 B7 V. Description of the invention (10) Move in the 2D direction of the line. The other moving mechanism 31 moves the mask stage 2 in a direction perpendicular to the mask reference surface 4. Laser displacement sensors 6, 8, vortex current sensors 20, regulators 2, 1, 6, 6, moving mechanisms 15, 16, and 31 are controlled by the control device 40. The X-ray light source 4 5 emits X-ray 4 6. The X-ray light source 4 5 series is, for example, a synchrotron, and the X-ray 4 6 series synchrotron emits light (SR light). The X-ray 4 6 irradiates the surface of the wafer 10 to be exposed through the photomask 11. Next, an X-ray exposure method will be described with reference to Fig. 2 '. In step S1, the wafer stage 1 is moved 'so that a predetermined portion of the main surface of the wafer 10 is located on the front side of the laser shift sensor 8 on the mask side. Using the mask-side laser shift sensor 8, the distance from the mask-side laser shift sensor 8 to the main surface of the wafer 10 was measured. The process proceeds to step S 2 'Move the wafer stage 1' so that the vortex current sensor 20 is positioned on the front side of the mask-side laser displacement sensor 8. The distance from the mask-side laser displacement sensor 8 to the sensing reference surface 22 of the vortex current sensor 20 was measured. This measurement result is compared with the measurement result of step S1, and the height of the eddy current sensor 20 from the wafer reference plane 3 is adjusted so that the sensing reference plane is located on the same plane as the main surface of the wafer. This adjustment is performed using a regulator 21. Then, the process proceeds to step S3, and the wafer stage 1 is moved so that a predetermined portion of the mask surface of the mask 11 is located on the front side of the wafer-side laser shift sensor 6. The distance from the wafer-side laser shift sensor 6 to the mask surface of the mask 11 was measured. This paper size is applicable. National National Standard (CNS) A4 specification (210X297 mm) -13- --------- ^ seed coat-(Please read the precautions on the back before filling this page), 11 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 522218 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description (11) Then proceed to step s 4 to move the wafer stage 1 and make the target 2 5 is located on the front side of the wafer-side laser shift sensor 6. The distance from the wafer-side laser shift sensor 6 to the reference surface 27 of the target plate 25 was measured. The measurement result is compared with the measurement result of step S3, and the height of the target plate 25 from the mask reference surface 3 is adjusted so that the target plate reference surface 27 is located on the same plane as the mask surface of the mask 11. This adjustment is performed using a drive regulator 26. Then, the process proceeds to step S5, and the wafer stage 1 is moved so that the target plate 25 is positioned on the front side of the vortex current sensor 20. The distance between the sensing reference surface 2 2 and the target reference surface 27 was measured with a vortex current sensor 20. The mask stage 2 is moved in a direction perpendicular to the mask reference plane 4 so that the interval approaches the target frame. The distance between the sensing reference surface 22 and the target reference surface 27 is equal to the distance between the main surface of the wafer 10 and the mask surface of the photomask 11 (the interval between the wafer masks). Therefore, the interval between the wafer masks can be made close to the target. When the interval between the wafer masks is within the allowable range, the process proceeds to step S6 to perform X-ray exposure. In the first embodiment described above, it is not necessary to use a high-priced electrostatic capacity sensor and a high-resolution camera, and it is possible to adjust the interval between the main surface of the wafer 10 and the mask surface of the mask 11 with high accuracy. The vortex current sensor 20 can also be used to constantly monitor the interval between wafer masks. Therefore, when the interval is shifted from the target 値, the interval can be quickly returned to the original state. Furthermore, the laser displacement sensor and the eddy current sensor used in the first embodiment are small and lightweight. Therefore, even if the paper size of the stage is in accordance with China National Standard (CNS) A4 (210X297 mm) -14-(Please read the precautions on the back before filling this page)

Equipment _-order 522218 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (12) When there is not enough space, a sensor can be installed. It can also reduce the mechanical load acting on the stage. Next, a modification of the first embodiment will be described. In the above-mentioned first embodiment, at step S 2 ′ shown in FIG. 2, the degree of arrival of the sensing reference plane 2 2 is consistent with the height of the main surface of the wafer 10, and at step S 4 ′, the target plane of reference 2 is set. The height of 7 is consistent with the height of the mask surface of the mask 11. In a modified example, in a step corresponding to step S 2 of the first embodiment, the control device memorizes the difference between the height of the reference surface 22 and the height of the main surface of the wafer 10. In a step corresponding to step S4, the difference between the height of the target surface of the target plate 27 and the height of the mask surface of the mask 11 is memorized. It is not necessary to adjust the height of the vortex current sensor 20 and the target plate 25. In a step corresponding to step S5 of the first embodiment, the distance between the sensing reference surface 22 and the target reference surface 27 is measured. Based on the measurement of this interval, the difference between the height of the reference surface 22 and the height of the main surface of the wafer 10, and the difference between the height of the target plate reference surface 27 and the height of the mask surface of the mask 11 can be measured. The interval between wafer masks is calculated by calculation. In this modification, the regulators 21 and 26 shown in Fig. 1 are not required. Fig. 3 shows a pitch adjusting device according to a second embodiment of the present invention. The photomask stage 101 and the wafer stage 150 are arranged substantially parallel to each other so that the surfaces holding the photomask and the wafer face each other. Introducing the XYZ orthogonal coordinate system in which the direction perpendicular to the opposing surface of the mask stage 101 and the wafer stage 150 is used as the Z axis. A photomask fastener 105 is mounted on the opposite surface of the photomask stage 101 via a horizontal measuring mechanism 110. Mask to form a mask pattern (Please read the precautions on the back before filling this page)

、 1T This paper size applies the Chinese National Standard (CNS) A4 specification (21 × 297 public directors) -15-522218 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ______ Β7_ V. Description of the invention (13) 1 〇3 Vacuum sucked on the photomask fastener 105. The horizontal measuring mechanism 1 1 0 is capable of adjusting the height in the Z-axis direction (the height in a direction perpendicular to the surface forming the mask pattern) with respect to the mask stage 1 101 to the mask 10 3. Capacitive sensors 1 07A to 107C are mounted on the opposite side of the photomask stage 101. The electrostatic capacity sensors 107A to 107C are arranged at positions corresponding to the vertices of an imaginary regular triangle that share a center with the mask fastener 105 respectively, as shown in FIG. Each of the capacitance sensors 10 7 A to 107 C can measure the distance to a conductive surface parallel to the X and Y planes facing the capacitance sensor. The photomask stage 1 01 is moved by the two-dimensional movement mechanism 1 09 to move in a two-dimensional direction parallel to the opposite surface, that is, in the X and Y directions. On the opposite surface of the wafer stage 1 50 A two-dimensional moving mechanism 160 is mounted on the horizontal measuring mechanism 158. A wafer fastener 154 is mounted on the 2-dimensional moving mechanism 160. The wafer fastener 1 5 4 is a vacuum suction wafer 1 5 2. In a state where the wafer 1 54 is vacuum-absorbed on the wafer fastener 15 4, the exposed surface of the wafer 1 5 2 is substantially parallel to the X Y plane and faces the photomask 103. The level measuring mechanism 158 adjusts the height from the opposite surface of the wafer stage 150 to the wafer 152. The two-dimensional moving mechanism 160 can move the wafer 152 in the two directions parallel to its exposed surface, that is, the X direction and the Y direction. A laser displacement meter 156A to 156C is further mounted on the opposite side of the wafer stage 150. Laser displacement meters 1 5 6A ~ 1 6 6 C series are equipped with corresponding capacitance sensors 1 0 7 A ~ This paper size is applicable. National National Standard (CNS) A4 specifications (210X297 mm): 16 factories " '(Please read the notes on the back before filling this page)

Binding and ordering 522218 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 ______ B7 V. Description of the invention (14) 1 0 7 C. Each of the electrostatic capacity sensors 107A to 107C can measure the distance in the Z-axis direction with respect to a plane substantially parallel to the X-Y plane of the laser displacement meter. Level measuring mechanism 1 1 0, 1 5 8 and 2-dimensional moving mechanism 109, 160, electrostatic capacity sensors 107A to 107C, and laser displacement meter 1 5 6 A to 1 6 6 C system is controlled by 170 control. X-ray is, for example, a synchrotron radiation system that irradiates the photomask 103 from the photomask stage 101 side, and the pattern formed on the photomask 103 is transferred to the exposed surface of the wafer 15.2. Next, a method of adjusting the distance between the mask 103 and the wafer 152 in the X-ray exposure apparatus shown in FIG. 3 will be described. The calibration of the three laser displacement meters 156A to 156C and the calibration of the three capacitance sensors 107A to 107 ° C have been completed. That is, in the case of measuring the distance from the opposite surface of the wafer stage 150 to a plane at a certain height, the measurement systems of the laser displacement meters 15 6 A to 15 6 C are all consistent. When measuring the distance from the opposite surface of the reticle stage 101 to a plane at a certain height, the measurement systems of the electrostatic capacity sensors 107A to 107C are all consistent. The photomask 1 0 3 is fixed to the photomask fastener 105 and the wafer 1 5 2 is fixed to the wafer clip 1 5 4. The distances from the electrostatic capacity sensors 1 〇 A to 1 0 7 C to the exposed surface were measured at 3 places on the line other than the exposed surface of the wafer 1 5 2, and the level measuring mechanism 1 5 8 was driven to make all The measurement results are consistent. Next, use a laser shift meter at 3 places on a line that is not on the surface of the mask 103 (please read the precautions on the back before filling this page)

Packing _-order% This paper size is applicable to Chinese National Standard (CNS) A4 specification (210X297 mm) _ 17 _ 522218 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 _B7_ V. Description of the invention (15) 1 5 6 A One of 1 5 6 C measures the distance from the laser shift meter to the surface of the mask, and drives the level measuring mechanism 1 10 to make the three measurement results consistent. The distance from the laser shift meter to the measured point can be measured by operating the 2D moving mechanism 1 0 9 with the measured point on the surface of the mask 103 positioned on the front of the laser shift meter. Thereby, the surface of the mask pattern forming the photomask 103 is parallel to the exposed surface of the wafer 15.2. Since capacitance sensors 1 0 7 A to 1 0 7 C and laser displacement meters 1 5 6 A to 1 6 6 C are prepared separately, the photomask 1 can be shortened when performing horizontal measurement processing. 3 X and Y movement distances from the wafer 1 5 2. When this horizontal measurement process is performed, the distance D b in the Z-axis direction from the laser shift meter 15 6 to the surface of the photomask 103 is measured. Next, the 2-dimensional moving mechanism 109 was operated, and the electrostatic capacity sensor 107A was positioned on the front of the laser displacement meter 156A. Using a laser displacement meter 156 A, the distance D a from the laser displacement meter 156 A to the surface of the electrostatic capacity sensor 107 A was measured. Furthermore, the distance D a does not change even if the photomask 103 and the wafer 1 52 are exchanged. Therefore, it is not necessary to perform the measurement every time the photo mask 103 and the wafer 15 are replaced. The difference between the distance D a and the distance DB is equivalent to the distance D c between the surface of the capacitance sensor 107 A and the surface of the photomask 103. Using the electrostatic capacity sensor 107A, the distance D D with respect to the Z-axis direction from the surface of the electrostatic capacity sensor 107A to the exposed surface of the wafer 1 52 was measured. The distance G between the surface of the mask 103 and the exposed surface of the wafer 15 2 can be obtained by the following formula. This paper size is applicable. National National Standard (CNS) A4 specification (210X297 mm) ~ \ 〇 ^ (Please read the precautions on the back before filling this page)

Binding. # 522218 Printed by A7 _B7 of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (16) [Formula 1] G = D d — D c = D d One (Da — Db) The calculation is based on the requirements The difference between the interval G and the target 値. By driving the level measuring mechanism 1 5 8, the wafer 1 5 2 is moved only by the difference. With the above steps, the interval between the two can be adjusted so that the interval between the mask 103 and the wafer 15 2 is close to the target 値. Ideally, the interval G of the two-dimensional moving mechanism 160 will not change, but in reality, the interval G will change within the range of the movement accuracy of the two-dimensional moving mechanism 160. However, even if the two-dimensional moving mechanism 160 is operated, the distance D a and the distance D b do not change. Therefore, the 2D moving mechanism 160 is operated to expose the wafer 1 52. After the exposed area in the plane is moved, the distance G can be detected by only measuring the distance DD again, and the interval G can be compensated. Offset. In the X-ray exposure apparatus according to the second embodiment described above, it is possible to measure the interval between the photomask and the wafer without using a high-resolution camera. Since it is not necessary to use a high-priced camera with a large resolution, it is possible to reduce the size and cost of the exposure device. The measurement error of the laser displacement meter is about ± 0. 1 // m, and the measurement error of the capacitance sensor is about ± 1 0 // m. Therefore, the distance D a and the distance D b include the maximum error 1: 0 · 1, and the distance D d include the maximum error 0 · 0 1 // m. Therefore, the interval G can be obtained with an accuracy of about ± 0 · 2 # m. In the above second embodiment, it was explained that three electrostatic capacitances are arranged. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 '乂 297 mm) ~ \ 〇Z (Please read the precautions on the back before (Fill in this page)

Order 522218 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 _____B7__ V. Description of the invention (17) Sensor 1 07A ~ 1 07C and laser displacement meter 1 5 6A ~ 1 5 6 C, but static electricity can also be used. The capacity sensor and the laser shift meter are at least. Each is equipped with one. By operating the two-dimensional moving mechanism 160, the distance between the capacitance sensor and the wafer 152 can be measured at three places on the exposed surface of the wafer 152. Similarly, by operating the two-dimensional moving mechanism 160, the distance between the laser sensor and the surface of the mask 103 can be measured at three places on the surface of the mask 103. In the second embodiment described above, a laser shift meter is disposed on the wafer stage 150 and a capacitance sensor is disposed on the mask stage 110, but other distance sensors may be disposed. For example, when a conductive film is previously formed in a region of a mask pattern not formed on the surface of the mask 103, a capacitance sensor can be used instead of the laser shift meter. Since the capacitance sensor is lower in price, higher accuracy, and smaller than a laser shift meter, it is possible to reduce the cost and miniaturization of an exposure device. In the second embodiment described above, the photomask fastener 105 is mounted on the photomask stage 101 via the level measuring mechanism 1 110. However, the reticle fastener 105 can also be fixed to the reticle stage 101 without intervening the level measuring mechanism 1 1 0. In this case, the reticle stage itself is moved in the Z direction by another horizontal measuring mechanism. Since the photomask fastener 105 is fixed to the photomask stage 101, the distance De is not changed without changing the photomask 103. Fig. 5 is a schematic view showing an electron beam approaching exposure device 210 to which the pitch adjusting device according to the third embodiment of the present invention is applied. The electron beam approaching exposure device 21 series includes: electron gun 212 This paper size is applicable to Chinese National Standard (CNS) A4 specification (210X297 mm) -20- (Please read the precautions on the back before filling this page)

Installed.

1T _ # 522218 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 _B7 V. Description of the invention (18), the beam scanning device 2 2 0, and the pitch adjusting device 2 3 0. The electron gun 2 1 2 series includes: an electron beam source 2 1 4, an electrostatic lens 2 1 6, and an aperture 2 1 8. The electron beam source 2 1 4 emits an electron beam. The electrostatic lens 216 converts an electron beam emitted from the electron beam source 214 into a parallel beam 2 1 5. The parallel light beam 2 1 5 is shaped by the light beam 2 1 8 and is incident on the light beam scanning device 2 2 0. The beam scanning device 220 includes main deflectors 222 and 224 and sub deflectors 226 and 228. The beam scanning device 220 scans an electron beam. The pitch adjusting device 2 3 0 holds the mask 2 3 1 at the position where the scanned electron beam is incident. The wafer 2 4 0 is arranged so as to face the mask 2 3 1 through a small gap. A resist film 2 4 2 for electron beam exposure is coated on the surface of the wafer 2 4 0 opposite to the mask 2 3 1. The electron beam transmitted through the 'mask 2 3 1' is incident on the resist film 2 4 2, and the pattern of the mask 2 3 1 is transferred onto the resist film 2 4 2. Fig. 6 (A) is a schematic diagram showing the distance adjusting device 230 according to the embodiment of the present invention. The wafer stage 2 51 is held in a two-dimensional direction parallel to the X Y plane by the X Y driving mechanism. The wafer fastener 2 5 3 is mounted on the wafer stage 2 5 1 via three Z-axis-direction driving mechanisms 2 5 2. The Z-axis direction driving mechanism 2 5 2 can move the wafer fastener 2 5 3 in the z-axis direction perpendicular to the XY plane. The Z-axis drive mechanism 2 5 2 can adjust the inclination angle of the wafer fastener 2 5 3 on the X Y plane by making the respective driving amounts different. The wafer fastener 2 5 3 uses an electrostatic fastener mechanism to hold the wafer 2 4 0. X Y axis drive mechanism 5 0 (Please read the precautions on the back before filling this page)

装 · # This paper size applies to Chinese National Standard (CNS) A4 specifications (210x297 public directors): 21 522218 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 _ 一一 _B7_ V. Description of the invention (19) and Z The shaft drive mechanism 2 5 2 is operated in accordance with a command from the control device 270. The photomask fastener 2 60 is used to hold the photomask 2 3 1 ° using an electrostatic fastener mechanism. The photomask 2 3 1 held by the photomask fastener 2 6 〇 is held by the wafer fastener with a slight gap. 2 5 3 wafers 2 4 0 opposite. The mutually opposing surfaces of the wafer 2 40 and the photomask 2 31 are referred to as a measured surface 2 4 0 a and a measured surface 2 3 1 a. The area of at least a portion of each of the measured surface 2 3 1 a and the measured surface 2 4 0 a is formed of a conductive material. This conductive area is connected to a ground potential. In addition, a resist film for electron beam exposure is formed on the measurement surface 2 40 a of the wafer 24. The photomask fastener 2 60 is mounted on the photomask stage 2 61 via three z-axis driving mechanisms 2 62. The z-axis driving mechanism 2 6 2 can move the mask fastener 26 in the Z-axis direction. The z-axis driving mechanism 2 6 2 is able to adjust the oblique angle of the mask fastener 2 6 〇 β to the χ γ plane by making the respective driving amounts different. The z-axis drive mechanism 2 6 2 operates according to a command from a control device. A capacitance type displacement meter for a photomask 2 5 5 is mounted on a wafer stage 2 5 1, and a capacitance type displacement meter 2 5 5 is mounted on a photomask stage 261 with respect to a photomask 231 °. A capacitance type displacement meter 2 6 5 for wafers and an analog target plate 2 6 6. The dummy target 2 6 6 has a dummy target measurement surface 2 6 6 a which faces the same direction as the target measurement surface 2 3 1 a of the mask 2 3 1. The measurement surface 2 6 6 a of the dummy target is formed of a conductive material and is connected to the ground potential. Displacement by electrostatic capacity type This paper is suitable for eNS) 297 kilometers) ~ —- (Please read the precautions on the back before filling this page)

-， 1Τ # 522218 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (20) The distance D c from the 2 6 5 to the measured surface of the analog target 2 6 6 a is in advance It is accurately measured by a laser shift meter or the like. The position of the analog target plate 2 6 6 relative to the capacitance type displacement meter is fixed. Therefore, the distance D is once the device is set. The system is unchanged. Figure 6 (B) is a front view of the photomask 2 3 1. The aluminum ring frame 2 3 2 physically supports a support plate 2 3 3 made of silicon. At the center of the support plate 2 3 3, a square film 2 3 4 forming a pattern to be transferred is held. The surface of the support plate 2 3 3 is a measurement surface 2 3 1 a defining the photomask 2 3 1. Generally, the length of one side of the film 2 3 4 is 40 to 50 legs, and the outer diameter of the support plate 2 3 3 is 1 25 coffee. In the support plate 2 3 3, a circle-shaped field 2 3 3 a with a width of about 1 Omin used to surround the film 2 3 4 is an area where the displacement amount can be detected by using a capacitance type displacement meter. By driving the XY driving mechanism, the capacitance type displacement meter 2 5 5 is arranged on the front surface of any part of the ring-shaped area 2 3 3 a, and the reference surface of the capacitance type displacement meter 2 5 5 can be measured. The shift amount of the mask 2 3 1 at the origin of the bit amount. The distance from the reference plane from the capacitance type displacement meter 2 5 5 is set in advance. Therefore, measuring the amount of displacement of the surface to be measured 2 3 1 a corresponds to measuring the distance D a from the capacitance type displacement meter 2 5 5 to the surface to be measured 2 3 1 a. In this specification, the order of measuring the amount of displacement from the reference surface using a capacitance type displacement meter is expressed as "measurement of the distance from the capacitance type displacement calculation". By driving the XY driving mechanism 2 50, the capacitance type displacement meter 2 5 5 is arranged on the front of the analog target plate 2 6 6 and can measure the capacitance of the paper. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297). Mm) (Please read the notes on the back before filling out this page)

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1T L # 522218 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (21) The distance D b between the volume shift meter 2 5 5 and the simulated measured surface 2 6 6 a. By driving the XY driving mechanism 2 5 0 and disposing the chip fastener 2 5 3 so that the capacitance type displacement meter 2 6 5 is located on the front side of the wafer 2 4 0, it is possible to measure from the capacitance type displacement meter 2 6 5 to the wafer 2 The distance Dd of the measuring surface 2 40 0 of 40. The measurement results of the capacitance type displacement meter 2 5 5 and the capacitance type displacement meter 2 65 are input to the control device 270. Generally, the measurable distance of the capacitance type displacement meter is about 0. 5 legs or more. In the mask 2 3 1, the area of the target plate of the capacitance type displacement meter 2 5 5 can be formed. When the width of the 3 2 a is about 10 mi, the distance that can be measured by the capacitance type displacement meter 2 5 5 For example, it is less than 1.5 legs. Therefore, the distances D a and D D are set to about 1 mm and the distance D B is set to 10 mm as an example. Next, it will be explained that the distance between the mask 2 31 and the wafer 2 40 is adjusted using the pitch adjusting device shown in FIG. 6 (A). First, the distances from the capacitance type displacement meter 2 5 5 to at least 3 points on the measured surface 2 3 1 a of the photomask 2 3 1 are measured. According to the measurement result, the Z-axis driving mechanism 2 6 2 is operated so that the measurement surface 2 3 1 a of the photomask 2 3 1 is parallel to the X Y plane. After the surface to be measured 2 3 1 a is parallel to the X Y plane, the distance D a is measured. Further, the distance D b is determined. Next, the distances from the capacitance-type displacement meter 25 5 to at least 3 points on the measured surface 2 40 a of the wafer 2 40 were measured. Based on the measurement results, the Z-axis driving mechanism 2 62 is operated so that the measured surface 2 40 a of the wafer 2 40 is parallel to the X Y plane. After the surface to be measured 24 0 a is parallel to the X and Y planes, the distance D d is measured. (Please read the notes on the back before filling this page)

Binding-#. This paper size applies Chinese National Standard (CNS) A4 (210X297 mm) -24-522218 A7 B7 V. Description of the invention (22) The interval between the photomask 2 3 1 and the wafer 2 4 0 g: G = Da + Dd — (Db + Dc) ··· (] _) (Please read the notes on the back before filling this page). The z-axis drive mechanism 2 5 2 or the Z-axis drive mechanism 2 6 2 is actuated to form the desired gap G. In this way, the interval g can be adjusted. It is desirable that the distance D B is measured once, so that it does not change. Therefore, it is not necessary to re-test each time the mask 2 31 or the wafer 2 40 is replaced. However, since the distance D B changes with the passage of time, it is better to periodically measure the distance D B and update it to a new value. In the above embodiment, only the capacitance type displacement meter is used as the displacement meter. Since the capacitance type displacement meter does not generate a magnetic field during the distance measurement, it does not affect the traveling direction of the electron beam. In addition, the capacitance type displacement meter has a simpler structure than a laser displacement meter, and does not include a printed circuit board that causes outgassing. Therefore, the pitch adjusting device of the embodiment is suitable for use in a vacuum, as in the case where the electron beam approaches the exposure device. In addition, since the pitch adjusting device of the embodiment does not use a high-priced high-magnification camera or the like, the price of the entire device can be reduced. The capacitance displacement meter 2 6 5 printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and the Consumer Cooperative Society is separated from the wafer DD DD and the capacitance displacement meter 2 5 5 is separated from the photomask 2 3 1 by D a In view of the characteristics of the capacitance type displacement meter, it is preferable to set it to about 1 minute. The distance G between the wafer 2 40 and the mask 2 31 is generally 50 // m. Therefore, the interval Db + Dc of the capacitance type displacement meter 2 5 5 and 2 6 5 is about 2 mm, which will shift from the measurable distance range of the capacitance type displacement meter. Therefore, it is impossible to directly measure D β + D c on the right side of the formula (1). Even if the data representing the interval D β + D c is obtained, it also contains a large error. The static paper size applies to the Chinese National Standard (CNS) A4 specification (210 × 297 mm) -25- " 522218 A7 ___B7_ V. Flowchart of the method for explaining the invention (24). Fig. 3 is a schematic view of a mask and a wafer of an X-ray exposure apparatus according to a second embodiment of the present invention. Fig. 4 is a front view of a mask fastener and a capacitance sensor mounted on a mask stage of an X-ray exposure apparatus according to a second embodiment of the present invention. Fig. 5 is a schematic diagram of an electron beam approaching exposure apparatus using a pitch adjusting device according to a third embodiment of the present invention. Figure 6A is the pitch adjustment device of the third embodiment of the present invention. 旣 (Please read the precautions on the back before filling this page)

Packing. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, Figure 6B is the front view of the photomask. [Illustration of drawing number] 1 wafer stage 2 mask stage 3 wafer datum plane 4 mask datum plane 5 wafer fastener 6 laser displacement sensor 7 mask fastener 8 laser displacement sensor 10. Wafer 11 Photomask 15 Moving mechanism 16 Moving mechanism This paper size is applicable. National National Standard (CNS) A4 specification (210X297 mm) _ 27-L0 522218 A7 B7

V. Description of the invention (25) 2 0 2 1 2 2 2 5 2 6 2 7 3 1 4 0 4 5 4 6 10 1 10 3 10 5 1 0 7 A 1〇7 B 1 0 7 C 10 9 110 12 0 15 0 15 2 15 4 1 5 6 A Vortex current sensor regulator Sensing reference plane target plate regulator Adjuster reference plane moving mechanism control device X-ray light source X-ray photomask stage photomask fastener electrostatic capacity Sensor Capacitance Sensor Capacitance Sensor 2D Moving Mechanism Level Measuring Mechanism X-ray Wafer Stage Wafer Fastener Laser Shift Meter Laser Shift Meter (Please read the precautions on the back before filling this page)

-Order # Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs

1 5 6 B This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) -28-522218 A7 B7 V. Description of invention (26) 1 5 6 C 15 8 16 0 1 7 0 2 10 2 12 2 14 2 15 2 16 Laser shift meter level measurement mechanism 2-dimensional movement mechanism control device Electronic beam approaching exposure device Electron gun electron beam source Parallel beam electrostatic lens (Please read the precautions on the back before filling this page)

Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 2 1 8 Light beam 2 2 0 Beam scanning device 2 2 2, 2 2 4 Main deflector 2 2 6, 2 2 8 Sub deflector 2 3 0 Pitch adjustment device 2 3 1 Photomask 2 3 1 a Measurement surface 2 3 2 Frame 2 3 3 Support plate 2 3 4 Film 2 4 0 Wafer 2 4 0 a Measurement surface 2 4 2 Resistance film 2 5 0 XY drive mechanism 2 5 1 Wafer Loading table order L0 This paper size is applicable. National National Standard (CNS) A4 specification (210X297 mm) -29- 522218 A7 B7 V. Description of the invention (27) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 2 5 2 Z-axis drive mechanism 2 5 3 Wafer fastener 2 5 5 Capacitance type displacement meter (for photomask) 2 6 〇Photomask fastener 2 6 2 Z-axis drive mechanism 2 6 5 Capacitance type displacement meter (for wafer ) 2 6 6 Analog target plate 2 6 6 a Simulate the measured surface 2 7 0 Control device (Please read the precautions on the back before filling out this page) This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -30-

Claims (1)

522218 A8 Amendment B8 C8 D8 VI. Patent Application Range ^ ^---- "Patent Application No. 901 28932 Chinese Application for Amendment of Patent Range Day correction 1. A pitch adjusting device, comprising: a first stage for delimiting a first reference plane; and a second reference plane for demarcating the second reference plane with the first reference plane 1 The second stage is parallel to the first stage with respect to the first stage; and the first fixing device for fixing the first object having the main surface to the first stage, and the main surface faces the aforementioned The second stage side is parallel to the first reference plane, and is parallel to the first displacement sensor mounted on the first stage, and the first displacement sensor is used to measure the distance from the sensor. The distance to a plane parallel to the second reference plane disposed on the front surface thereof; and the second fixing device for fixing the second object having the main surface to the second stage: the main surface faces the first 1'on the side of the stage 'and parallel to the aforementioned second reference plane; and, economic The Intellectual Property Bureau employee consumer cooperative prints a second displacement sensor mounted on the aforementioned second stage. The second displacement sensor is used to measure the distance from the sensor to the first sensor placed on the front of the sensor. The distance from the plane parallel to the reference plane; and... The eddy current sensor installed on the first stage and having a sensing reference plane parallel to the first reference plane; and the second carrier mounted on the first stage Platform and a vortex current sensor target with a reference plane parallel to the aforementioned second reference plane; the Chinese national standard (CNS) A4 specification (210 X 297 mm) applies to this paper size 522218 A8 B8 C8 D8范围. The scope of the patent application is a moving mechanism that moves one of the first stage and the second stage to the other 'in a direction parallel to and perpendicular to the first reference plane; and a control device that drives the aforementioned The moving mechanism 'positions the target plate on the front of the first displacement sensor, and measures the distance from the first displacement sensor to the target surface of the target plate of the target plate', and drives the moving mechanism to make the second Head The main surface of the bit is located on the front side of the first displacement sensor, and the distance between the first displacement sensor and the main surface of the second object is measured, and the moving mechanism is driven so that the eddy current sensor is located on the front side. The front of the second displacement sensor measures the distance from the second displacement sensor to the sensing reference surface of the vortex current sensor, and drives the moving mechanism so that the main surface of the first object is located on the second The front of the displacement sensor measures the distance from the second displacement sensor to the main surface of the first object, and drives the moving mechanism so that the target plate is located on the front of the vortex current sensor, and measures the Perceive the distance between the datum plane and the datum plane. 2. The distance adjusting device according to item 1 of the scope of patent application, which further includes: a first height adjustment mechanism that can adjust the height of the reference surface from the first reference surface to the eddy current sensor; and an adjustable from A second height adjustment mechanism for the height of the second reference surface to the target plate reference surface of the target plate, and the control device drives the second height adjustment mechanism according to a measurement result of the first displacement sensor, and The height from the second reference plane to the reference plane reference plane is equal to the height from the second reference plane to the main surface of the second target object; according to the measurement of the second displacement sensor described above, the paper size applies Chinese national standards (CNS) A4 specification (210X297 mm) _ 2----- = ----— (Please read the notes on the back before filling out this page) Order the printed copy of the Intellectual Property Bureau employee consumer cooperative of the Ministry of Economic Affairs 522218 A8 B8 C8 D8 VI. Scope of patent application (please read the precautions on the back before filling this page). As a result, the aforementioned first height adjustment mechanism is driven to make the height from the aforementioned reference plane to the perceived reference plane high. Equal to the height from the reference plane to the first desired product of the first main surface. 3. A distance adjustment method, comprising: fixing the first object on a first stage that defines a first reference surface, so that the main surface of the first object and the first reference The first step in which the planes are parallel; the second main surface of the second reference plane that is parallel to the first reference plane is fixed so that the main surface of the second object is parallel to the second reference plane. The second step of the second object; the height calculated from the first reference plane and the height of the sensing reference plane of the vortex current sensor mounted on the first stage and the first reference plane. The third step related to the height of the main surface of the first object; printed with the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs to pursue or adjust the eddy current sensor mounted on the second stage. The fourth step of the relationship between the height of the target plane of the target plate calculated from the second reference plane and the height from the second reference plane to the main surface of the second target object; and the measurement of the eddy current from the aforementioned Perceptron reference plane to the aforementioned reference plane Distance, the measurement result near the target Zhi camel interval adjusting the fifth step of the first stage and the second stage. 4. According to the method for adjusting the distance between the third item of the patent application range, in the third step, the sensing reference plane and the main surface of the first object are adjusted to be on the same plane, but in the fourth step, Adjust the size of this paper to Chinese National Standard (CNS) A4 (210X297 mm) -3-522218 A8 B8 C8 D8 VI. Scope of Patent Application On the plane. (Please read the precautions on the back before filling in this page) 5. A kind of gap adjusting device, which is characterized in that: it has: a photomask fastener for holding and holding the photomask forming the photomask pattern; and the aforementioned photomask fastener, A first horizontal measuring mechanism capable of moving the mask fastener in a first direction perpendicular to a surface forming a mask pattern of the mask fixed to the mask fastener; and a light supporting the first horizontal measuring mechanism A cover stage; a wafer fastener holding the wafer so that its exposed surface is relative to the photomask; and a second level measuring mechanism capable of moving the wafer fastener in the first direction; and rubbing the second level A wafer stage of a measuring mechanism; and a first distance from the first direction of the wafer mounted on the mask stage and capable of measuring the distance to the exposed surface of the wafer fixed to the mask fastener. Sensor; printed with the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, mounted on the wafer stage, and measured the distance from the first direction to the surface of the mask fixed to the mask fastener. A second distance sensor related to the distance in the first direction to the first distance sensor. 6. The distance adjusting device according to item 5 of the scope of the patent application, which further has a state where the relative position of the photomask fastener and the first distance sensor is still fixed, and the photomask fastener and the first distance sensor are fixed. The first two-dimensional movement mechanism that the distance sensor moves in the two-dimensional direction orthogonal to the aforementioned first direction. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -4-522218 A8 B8 C8 D8 Six Scope of patent application 0 (Please read the precautions on the back before filling out this page) 7. If the distance adjustment device of the scope of patent application item 5 is provided, it also has the need to move the aforementioned second distance sensor, so that the aforementioned wafer is buckled A second two-dimensional moving mechanism that moves a piece in a two-dimensional direction orthogonal to the first direction. 8 · If there is a gap adjusting device in the sixth item of the scope of the patent application, it further includes a second one that does not need to move the second distance sensor and moves the wafer fastener in a two-dimensional direction orthogonal to the first direction. 2-dimensional moving mechanism. 9. The distance adjustment device according to item 5 of the scope of the patent application, which further includes a control device which sets the distance from the second distance sensor to the first distance sensor to D a and sets the second sensor When the distance from the reflector to the surface of the mask is set to DB and the distance from the first distance sensor to the exposed surface of the wafer is set to DD, DD-(DA-DB) is compared with the target 値 to make the first level. The measurement mechanism or the second level measurement mechanism is operated to bring DD — (DA — DB) closer to the target 値. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 1. If the distance adjustment device of the 6th scope of the patent application, there is a control device, the control device is the When the distance is D a, the distance from the second sensor to the mask surface is D b, and the distance from the first distance sensor to the exposed surface of the wafer is DD, compare DD — (DA — DB) and the target 値, and the aforementioned first level measuring mechanism or the second level measuring mechanism is operated to bring DD − (D a — DB) close to the target 値. 1 1. A method for adjusting the distance, which is characterized by: ^ The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) " 522218 A8 B8 C8 D8 6. The scope of patent application has: Both the first surface and the second surface of the second measurement object are perpendicular to the first direction, and the first surface and the second surface are arranged opposite to each other, and the process of the first and second measurement objects is described; and Measured from the first distance sensor for measuring the distance to the second surface of the second measurement target to the first distance sensor for measuring the distance to the first surface of the first measurement target. A step of distance 0A in the direction; a step of measuring the distance Db in the first direction from the second distance sensor to the first surface of the first measurement object; and a step of measuring the distance Db between the first distance sensor and the first 2 a step of measuring the distance Dd in the first direction on the second surface of the object; and moving at least one of the first and second measurement objects in the first direction so that Dd-(Da-Db) approaches the target; The process. 1 2 · A pitch adjusting device, comprising: a first holding member that fixes and holds a first measurement object having a first surface; and holds the first holding member and is fixed to the pair. A first horizontal measuring mechanism capable of moving the first holding member in a first direction perpendicular to a surface of the first measurement object of the first holding member; and a first stage supporting the first horizontal measuring mechanism; and A second measurement object having a second surface is held as a second holding member with the second surface opposite to the first surface; and-a second hydrographic paper size capable of moving the second holding member in the first direction. Applicable to China National Standard (CNS) A4 specification (210X297 mm); -------- (Please read the notes on the back before filling this page), 1T Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives 522218 A8 B8 C8 D8 々, flat measurement mechanism for patent application; and (please read the precautions on the back before filling this page) the second stage supporting the aforementioned second level measuring mechanism; and the second stage being installed on the aforementioned first stage , And It measures the first distance sensor in the first direction to the second surface of the second measurement object fixed to the second holding member, and measures the distance to the second stage mounted on the second stage. A second distance sensor that measures the distance in the first direction and the distance to the first direction of the first distance sensor that is fixed to the first surface of the first measurement target of the first holding member. 1 3 · A distance adjusting device comprising: a first holding device for holding a first object having a first measurement surface; and a second object for holding a second object having a second measurement surface. A second holding device that holds the second measured surface relative to the first measured surface; a first displacement sensor that measures the distance from the first measured surface; and a consumer cooperative with the Intellectual Property Bureau of the Ministry of Economic Affairs The printed target is fixed relative to the first displacement sensor and has a simulated target surface in the same direction as the second measurement surface; and the second measurement surface and the front are measured. The second shift sensor for simulating the distance of the surface to be measured; and a moving mechanism: the moving mechanism moves at least one of the first holding device and the second holding device to move the first measured surface and The interval of the second measured surface changes. This paper size applies to the Chinese National Standard (CNS) A4 standard (210 X 297 mm) 522218 A8 B8 C8 D8 6. Application for patent scope 1 4. If the distance adjustment device for item 13 of the patent scope is applied, of which the first The shift sensor is disposed outside the shift amount detection range of the second shift sensor, and the second shift sensor is disposed outside the shift amount detection range of the first shift sensor. outer. 15. The pitch adjusting device according to item 13 of the scope of patent application, wherein the aforementioned first displacement sensor and the aforementioned second displacement sensor are electrostatic capacity type displacement sensors. 1 6 · If the distance adjustment device of the 13th item of the scope of patent application, it further has a control device: the control device is when the distance from the aforementioned second shift sensor to the aforementioned second measured surface is set to D a, from The distance from the second displacement sensor to the analog measurement surface is D b, the distance from the first displacement sensor to the simulation measurement surface is D c, and the distance from the first displacement sensor to When the distance of the first measured surface is set to DD, D a + DD-(DB + DC) is calculated, and the foregoing moving mechanism is driven according to the calculation result. 0 1 7. For example, the distance adjustment device for item 13 of the scope of patent application, where One of the objects of Table 1 and the second object is used for electrons. The light beam is close to the exposed mask, and the other is the exposed wafer. It also has: an electron gun that emits an electron beam; and an electron emitted by the electron gun. An electronic beam control device that advances the electron beam by passing the light beam through the mask and irradiating the wafer. 1 8. A method for adjusting the distance, which is characterized by: having: a first object having a first measured surface and a second ^ paper size applicable to the Chinese national standard (milk milk) 8 4 specifications (210 father 297 Mm) ~ 〇. '： —---- (Please read the notes on the back before filling out this page), 1T I # Printed by the Employees ’Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 522218 A8 B8 C8 D8 6. Scope of patent application The process of holding the second object on the measurement surface so that the second measurement surface is relative to the first measurement surface; and (please read the precautions on the back before filling this page). The step of measuring the distance D d from the first displacement sensor to the first measured surface; and measuring the distance D a from the second displacement sensor to the second measured surface with a second displacement sensor The distance D b from the second shift sensor to the simulated measurement surface whose position is fixed relative to the first shift sensor, and from the first shift sensor to the simulated sensor. Measure the distance DC of the surface and the distances DD and DA to calculate Da + Dd-(Db + Dc), A step of spaced surface and the second surface being measured by the first measurement. 19. The method for adjusting the distance between item 18 in the patent application scope further includes: before performing the step of obtaining the distance between the first measured surface and the second measured surface, using the second shift perception A step of measuring the distance DB from the second displacement sensor to the simulated surface to be measured. 2 0 · —A method for adjusting the distance, which is characterized in that: printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs: holding a first object having a first measurement surface and a second object having a second measurement surface Forming the second measured surface is a step relative to the first measured surface; and a step of measuring a distance DD from the first displacement sensor to the first measured surface with a first displacement sensor; And the step of measuring the distance D a from the second shift sensor to the second measured surface with the second shift sensor; and according to the step from the second shift sensor to the first shift The sensor I paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 7〇Z ": 522218 A8 B8 C8 D8 VI. The relative position of the patent application range is fixed to simulate the distance DB of the measured surface.丨 Displace the sensor to the aforementioned simulation. The distance D c of the measured surface, and the aforementioned DD, D (please read the precautions on the back before filling this page) A 'Pursue the specificity of the first measured surface and the second measured surface The process of information about the interval of the surface; and Moving at least one of the first object and the second object based on information specifying the interval between the first measured surface and the second measured surface, and moving the first measured surface and the second measured surface Interval changes. 2 1 · If the method for adjusting the distance between the 20th item of the patent application scope, before the step of obtaining information specifying the distance between the first measured surface and the second measured surface, the method further includes the second shift. The step of the sensor measuring the distance DB to the simulated surface to be measured. 2 2. A distance adjusting device, comprising: 'a first holding device for holding a first object having a first measured surface; and a second object for holding a second object having a second measured surface A second holding device for holding the second measured surface with respect to the first measured surface; printed with an employee consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs and arranged to be opposed to the first measured surface for measuring the A first displacement sensor with a distance from the first measured surface; and a first displacement sensor arranged opposite to the second measured surface to measure the distance to the second measured surface and to the first displacement The second shift sensor of the distance of the sensor; and a moving mechanism that moves at least one of the first holding device and the second holding device to move the first measurement surface and the second measurement surface. Interval changes. This paper size applies to China National Standard (CNS) A4 specification (210X297 mm). 107 522218 A8 B8 C8 D8 VI. Patent application scope-2 3 ·-A variety of spacing adjustment methods, which are characterized by: (Please read the back first (Please fill in this page again for the precautions.) Have and hold the first object with the first measured surface and the second object with the second measured surface, and make the second measured surface oppose: the first measured surface A step of measuring the distance D d between the first shift sensor and the measured surface with an i-th displacement sensor arranged relative to the i-th measured surface; and The step of measuring the second shift sensor 'from the second measurement surface to the distance da from the β table 2 to the second measurement surface; and from the first shift sensor to the previous measurement A step of calculating the distance between the second displacement sensor De and the distances Dd and Da, Da + Dd-De, and determining the distance between the first measured surface and the second measured surface. 2 4. A method for adjusting a distance, comprising: holding a first object having a first measured surface and a second object having a second measured surface such that the second measured surface is opposite to the second measured surface The process of the first measured surface; printed with the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs to arrange an i-th displacement sensor relative to the first measured surface to measure from the first displacement sensor A step of the distance DD to the first measured surface; and a second displacement sensor arranged relative to the second measured surface, and measuring the distance from the second displacement sensor to the second substrate. The process of measuring the distance DA of the surface; and · According to the paper size from the aforementioned first displacement sensor to the aforementioned second displacement sensor, the Chinese National Standard (CNS) A4 specification (210X297 mm) is applied -11-522218 A8 B8 C8 D8 VI. The process of obtaining the distance DE of the scope of patent application and the aforementioned DD and D a to obtain information specifying the interval between the first measured surface and the second measured surface; The distance between the surface and the second measured surface And moving at least one of the first object and the second object to change the interval between the first measured surface and the second measured surface. (Please read the precautions on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is sized for China National Standard (CNS) A4 (210X297 mm) _ 12-