TW520562B - Voltage regulated circuit with well resistor divider - Google Patents

Abstract

This invention relates to a voltage regulated circuit, more particularly, to a voltage regulated circuit with a well resistor divider. The present invention applies two well resistors act as the voltage regulated circuit and uses the characteristic of the well resistor in the resistance value, which is increased following the voltage that is transmitted to the well resistor to make an output voltage become a stable value. When the input voltage is an instable and over-high value, the depletion region in the well resistor will extend to absorb the over-high voltage value and make the output voltage to become a stable voltage value.

Description

520562 V. Description of the invention α) 5-1 Field of the invention: The present invention relates to a voltage regulator circuit, and more particularly to a voltage regulator circuit using a well resistance divided voltage. The invention uses two well resistors to form a voltage stabilization circuit, so that the output voltage is a stable value. 5-2 Background of the Invention: In integrated circuits, voltage regulator circuits usually play the role of making the output voltage a stable voltage value in order to meet the needs of the product. In order to achieve product performance, some circuits on some semiconductor circuits require a stable input voltage to maintain their normal function. However, the external input voltage value is usually an unstable value that changes within a certain range. This unstable voltage value will easily have an adverse effect on some circuits, thereby reducing the performance of the integrated circuit and affecting the integrated circuit. Quality. Therefore, a voltage regulator circuit is usually added to the integrated circuit that needs to stabilize the voltage input value to maintain the performance of the circuit and improve the quality of the integrated circuit. Generally, most voltage regulator circuits only adjust as the input voltage source changes. However, in most internal circuits of semiconductor devices, the reference voltage of the circuit will change with temperature and system voltage source. This change will affect the operation of certain circuits that require a fixed reference voltage, and then affect the quality of the integrated circuit.

520562 V. Description of the invention (2) 5-3 Purpose and summary of the invention: The main purpose of the present invention is to form a voltage regulator circuit using two well resistors so that the output voltage value is a stable voltage value. A second object of the present invention is to form a voltage stabilization circuit using two well resistors to improve the quality and yield of the integrated circuit. A third object of the present invention is to use two well resistors to form a voltage stabilization circuit to accelerate the efficiency of the process operation of the integrated circuit. Another object of the present invention is to use two well resistors to form a voltage regulator circuit to reduce the production cost of the integrated circuit during the process operation. According to the above-mentioned object, the present invention provides a voltage stabilizing circuit, which uses two well area resistors as a voltage stabilizing circuit so that the output voltage becomes a stable voltage value. When the voltage of the input voltage stabilizing circuit is an unstable voltage value, the empty area in the resistance area of one well will increase the resistance value of the well resistance with the increase of the voltage. The increased resistance value using the well resistance can consume the excessive voltage value of the input voltage, so that the output voltage value is a preset stable voltage value. In addition, the voltage regulator circuit of the present invention can be composed of two well resistors of the same architecture. When the temperature changes, two wells

The resistance will increase or decrease at the same time. By using the invention, the output efficiency of the output voltage does not change with the temperature and has a range of operating efficiency, and the voltage regulator circuit is improved. The integrated circuit system can also be accelerated. The integrated circuit system can be reduced. . According to the present invention, the production cost of continuous cropping is increased. Detailed description of the 5-4 invention: In addition to the description of some embodiments of the invention, the present invention can be described in detail as follows. However, the scope of the present invention is not limited except that the scope of the present invention is not limited, and is implemented in other embodiments, and "subject to the scope of the subsequent patents. The voltage regulator circuit & is a voltage regulator circuit that can be controlled is slightly equivalent. Important circuits, because the voltage of positive voltage of some integrated circuits is a certain value, it can maintain the voltage value within a range of ±, and the input voltage value of Leidang is a fixed energy to absorb the excess voltage = 丄 1 The voltage stabilization circuit can exert its proper power voltage value. In addition, to provide some circuits with a stable electrical stability, the power supply circuit can be referred to as shown in the figure. This A voltage circuit contains at least one voltage. Schematic diagram of the voltage stabilization circuit. One terminal of the voltage resistance 100 is dry; the resistance 100 and a second resistance 20 0. The first state. ~ And the power source resistance of the two resistance 20 0 and a reference voltage: 塾 Vcc) 3⑽ Another i (vref) 400 connected to the first resistor 100 is composed of a first resistor 100 and a second resistor

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Pull out the contact end. The resistance value of the first resistor 100 is R1 and the resistance value of the second resistor 2A is R2. The other end of the second resistor 200 is grounded. Therefore, the voltage value of the McCaw voltage of 40 0 is equal to the ratio of the power supply voltage 3 resistance 2 0 0 to the total resistance (Ri + R2).

Vref = Vccx (R2 / (R1 + R2))). When the first resistor ιOO and the second resistor 2000 are both of the same resistance, when the power supply voltage 300 value is increased, the value of the electric pick-up 00 is also increased. When the first-resistor 100 adopts the well power of the present invention: and :, two; the power supply voltage 3 00 is strengthened, and the voltage across W-resistor 100 is increased, the empty area in the well resistance will be enlarged accordingly. The resistance will also be debated, and the voltage value that is too large is consumed, so that the reference voltage 40 0 is still a certain value, as shown in the first figure. This is to use the well resistance of the present invention as a resistance 1 00 schematic. Well resistance is now applied below the isolation zone. The resistance is located in the substrate 51 (), and within the substrate 51Q to the region 520 and a second doped region 53. And a third doped region 54. --- Y Y 550 and-fourth doped region 56. The first doped region 52 and the second region are respectively located at the second and second regions of the hetero region 53 and the isolation region 55 is located at the second? : Doped, between 5 2 0 and the first doped region 5 3 0. The isolation zone 5 5 〇 may be-shallow strict >

Hshallow trench (synchronous; Sn) region or field: Hxallow region; Fox) region. The first doped region 520, the second nutrient% 530, and the = off region 550 are all located above the third doped region 54. General: 10 is a P-type substrate. The erbium-doped region 520 and the second doped erbium are usually implanted with N + ions as the first electrode and the second electrode. Third blend: 30

Page 8 V. Description of the invention (5) 5 4 0 Usually implanted with n-type ions Usually implanted with P-type ions as-,, # 垔 Well area resistance. In the fourth doped region 560, the second electrode and the third electrode are buried, the first electrode and the third electrode are grounded to 5 5 5. The first-doped region 52 is input, and the two resistors f00 are connected. The value of the power supply voltage is 300. The test voltage is 40. The first sub-layer can obtain a parameter on the second doped region 5 3 0. Depending on one of the circuit requirements, the resistance 20 is the 0-type well resistance or the p-type well resistance. Same structure resistance. The resistance 2 0 0 can be the same as that required for the first resistance 1 0 0. Generally, the Γ / region 540 and the fourth doped region 56 are implanted with ： to ′:; The dose is per cubic meter. -Tm · 'and the depth of implantation of the ion is U to U micro brothers-濉 doped £ 53. The implanted dose is 021 ions per cubic centimeter, and the implanted dose in the doped region 540 of the ion implantation is Per liter / min. = 0.5 micron. The third agent n = to 1 micron. Fourth Doped Region-Implantation] Chuanli has 1018 to 1021 cubic cubic centimeters and a depth of 0.5 to 0.5 microns. After the ion implantation of the second implanted region 5 20 input-voltage value, this = [will be obtained on the second doped region 5 3 0 through the third implanted region 540—consider the voltage of 40 0 Voltage value. When the electric voltage of the power source is 300, the second electric charge diffuses outward in the vacant region between the third doped region 540 and the substrate 51, and decreases the neutral electrical region (Table Zhao Yue) …, Le Ertu households do not weigh),

Page 9 520562 Explanation of the invention (6) ΐ t :: resistance resistance value to absorb excess input voltage *, so that a stable reference voltage value of 400 can still be obtained at the second: J: 30. Therefore: The extended range of the empty region 545 in 0 depends on the voltage value of the first doped doping / Lt doping. When the first doped region 5 2 0 is input, and the larger the total: value is, the larger the range of the second doped region 540 is. If the resistance value is also higher, the excessive input voltage value is absorbed. . In # ^ R, the second resistor 2 0 0 and the first resistor 100 are both of the same name structure < well resistance, then go to, and sores, and h I ~ w U,, and, The Weijingshan Erjing resistance will increase or decrease at the same time, so that the output voltage does not change with temperature. Obstruct! In the present invention, the resistance of the standing well is the first electric and the second Γ Λ at least including the -first-doped region 52 within 51 °. 5fin /-doped surface region 530, a third doped region 54o, a fourth doped region ^ Di Er # heteroregion 5 3 0 on both sides, and the fifth doped region 0: = region 52 and Second doped region 53. between. The first-doped region is usually implanted with r 530 as the first electrode and the first ::-the doped region 56 0 is usually implanted with p-type ions as the first: electrical and fourth electrode and third The electrode is usually implanted with P-type ions and is grounded to 58Q with "" region 57. Power lion 〇 =

Page 10 520562 V. Description of the invention (7) The first-doped region 5 2 0 input, and the right 篦-抶 wide-voltage two resistor 2 can be input. . Available for reference-the difference in reference circuit requirements, number: resistance UK, well resistance. With the resistance of the structure. The resistance 2 () () can be the same as the brother-resistor 1GG. According to the voltage requirements of the semiconductor element, the fifth-doped region 520 is filled with the d :: Ϊ region 53V, the third doped region 540, and the fourth doped region. Miscellaneous area 56. Endophytic components have 1 and two-way 'first doped region 520 implanted dose per cubic cubic = yes, to nm ions' and ion implantation depth ⑴ &: doped region 530 implanted dose For each cubic centimeter there are 1018 to 1 ions implanted into a depth of 1 to G. 5 microns. Number: 捭 There are 1015 to 1018 ions in the early square centimeter, and the amount of added J is every 0.2 to 1 micron. The fourth implantation area 560 implanted Γ-018 to 1021 ions, and the implantation depth of the ions was another two to 0.5 micrometers. The number of implanted ions in the fifth doped region 57 0 is 1018 to 1021 ions per cubic centimeter, and the zeta number of the ion implantation is 0.1 to 0.5 microns. Heart ice degree is

When the power supply voltage 300 is input from the first doped region 52, a voltage will pass through the third doped region 540 and the second doped region 53 = J

The voltage is 400. When the supply voltage is 3. 〇 Sudden increase in voltage value J J = blank, upper / lower neutral area (reference = nothing) The vacant region 545 in the divalent doped region 540 of the heart will increase the well 520562 5. Description of the invention (8) The resistance value of the resistor to absorb the excess wheel. A stable reference can still be obtained on the miscellaneous region 530 so that the range extended by the second doped 540 is considered to be within the range of the third doped region 54. : The third doped region The enlarged range of the third doped region 540 is determined by the interference, and is determined by the voltage value. When the first parasitic change is larger, the voltage value of the space 2 input in the third doped region 540 is higher, and the resistance value of the well resistance is also higher. The larger the range of Yin Xi, the larger the second in the circuit. Electricity is 0 and -electricity == voltage value. If it is in resistance, when the temperature changes, the wells of the two wells make the output power do not change with the temperature change; it is called Jiaoda or smaller, so the difference in process requirements is shown. 5 1 〇 can also use M agent when the substrate 5 1 〇 is N-type substrate 睥, 筮 the substrate.

The substrate 5 is implanted with a first doped region of 52 °, the second doped region # F 53 0 and the second doped region 54Q is implanted with a separation region 5 60 and a fifth doped region 57 is implanted, and the fourth region is implanted Miscellaneous t ,, ρ,, 0,,, ^, ^ ^^^ tt 7 4 day mouth bag, and the value of e F presents the same temperature as the current temperature. = —Here changes with changes in ambient temperature. i is changed and changed, and according to the embodiment described above, the present invention provides a circuit that uses -well resistance as a string in the voltage stabilization circuit: one of d-resistance to make the output voltage be one Stable voltage value. When input 520562 V. Description of the invention (9) When the voltage of the voltage stabilization circuit is an unstable voltage value, the empty area in the well area of the well resistance will increase the resistance value of the well resistance with the increase of the voltage. The increased resistance value using the well resistance can consume the excessive voltage value of the input voltage, so that the output voltage value is a preset stable voltage value. The voltage stabilization circuit of the present invention can also improve the quality and yield of the integrated circuit. The invention can further reduce the production cost of the integrated circuit manufacturing process operation. It has not only practical effects, but also a design never seen before. It has improved efficacy and progress. Therefore, it has met the requirements of the patent law, Apply for it. For this reason, the examiners are honoured to examine it in detail, and pray for the granting of patents at an early date. The above description is only a preferred embodiment of the present invention. This embodiment is only used for illustration, not for limiting the scope of patent application of the present invention. It can still be implemented without departing from the essence of the present invention. Such changes should still fall within the scope of the present invention. Therefore, the scope of the present invention is defined by the following patent application scope.

520562 on page 13 Brief description of the diagram The first diagram is a schematic diagram of a voltage stabilization circuit; the second diagram is a schematic diagram of a semiconductor circuit using a well resistance of the present invention as a first resistor; the third diagram is a well resistance using the present invention Schematic diagram of excessive voltage applied to the semiconductor circuit of the first resistor; Schematic diagram of another semiconductor circuit using the well resistance of the present invention as the first resistor; and Schematic diagram of the fifth resistor using the well resistance of the present invention Schematic diagram of excessive voltage applied to another semiconductor circuit of the first resistor. Representative symbols of the main parts

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Page 15

Claims (1)

520562 6. Scope of patent application 1. A voltage stabilizing circuit using a well resistance divided voltage, which includes at least a first resistance, the first resistance is the well resistance and the first resistance includes a first terminal and a A second terminal; a second resistor including a third terminal and a fourth terminal, wherein the third terminal is connected to the second terminal and the first resistor and the second resistor It is in a state of being connected; a power voltage connected to the first terminal; and a reference voltage connected to the third terminal and the second terminal. 2. The voltage stabilizing circuit according to item 1 of the patent application range, wherein the well resistance is an N-type well resistance. 3. For example, the voltage stabilization circuit of item 1 of the patent application, wherein the well resistance is a P-type well resistance. 4. For the voltage regulator circuit of item 1 of the patent application, wherein the second resistor is a well resistance. 5. The voltage regulator circuit of item 4 of the patent application, wherein the second resistor is an N-well resistor. 6. The voltage regulator circuit of item 4 in the scope of patent application, wherein the first Page 16 520562 6. Scope of patent application The second resistor is a p-well resistor. 7. The voltage regulator circuit of item 1 in the scope of patent application, wherein the above reference voltage is a stable voltage value. 8. A voltage stabilizing circuit using a well resistance voltage divider, which at least comprises: a first doped region, the first doped region is located in a substrate, and the first doped region is connected to a power supply voltage, The aforementioned substrate is a P-type substrate and a second doped region, the second doped region is located in the substrate and the second doped region is connected to a reference voltage; a third doped region, the The third doped region is that the well resistance is located in the substrate and is in contact with the first doped region and the second doped region; when the power supply voltage suddenly increases, the third doped region will expand accordingly, so that Making the reference voltage a stable voltage value; an isolation region located in the substrate between the first doped region and the second doped region and within the third doped region A fourth doped region, the fourth doped region is located in the substrate and on one side of the second doped region; and a resistor is connected between the second doped region and the fourth doped region Area. 9. The voltage regulator circuit according to item 8 of the patent application, wherein the first doped region is an N-type doped region. Page 17 520562 6. Scope of patent application 10. The voltage regulator circuit according to item 8 of the patent application scope, wherein the second doped region is an N-type doped region. 1 1. The voltage regulator circuit according to item 8 of the patent application, wherein the third doped region is an N-type well region. 1 2. The voltage regulator circuit according to item 8 of the patent application, wherein the fourth doped region is a P-type doped region. 1 3. The voltage regulator circuit according to item 8 of the scope of patent application, wherein the above-mentioned isolation area is a shallow trench isolation area. 1 4. The voltage regulator circuit according to item 8 of the scope of patent application, wherein the above-mentioned isolation region is a field oxidation region. 1 5. The voltage regulator circuit according to item 8 of the scope of the patent application, wherein the above-mentioned isolation region can be replaced by a fifth miscellaneous region. 1 6. The voltage regulator circuit according to item 8 of the scope of patent application, wherein the second resistor is a well resistance. 1 7. The voltage regulator circuit according to item 16 of the patent application scope, wherein the second resistor is an N-well resistor. 6. The scope of patent application, such as the scope of the patent application, the first resistance is the voltage stabilization circuit of ~ P-type well: item, of which the above one uses the two-well lightning resistance ^ Including: the voltage regulator circuit of the knife voltage, The first doped region is connected to a power supply voltage, the first doped region is located in a substrate, and the first and the first: doped region is a type doped and doped middle region. The material is an N-type substrate. The impurity region is changed. The-/ σ doped region is connected to the spring test voltage. The impurity region is located in the substrate and the second doped region. The doped region is a P-type doped: P ^ doped region, the second doped region is located in the substrate and is connected to the $ b 'region and the second doped region, & Komen and contacts the P-type Well, the first well resistance; and the third doped region mentioned above is that when the power supply voltage suddenly increases, the cocoon-coupling is large, and the reference voltage is a stable electric f-parallel region. Expand the fourth doped region. 'The fourth doped region is located on one side of the second doped region. The upper p is in the 4 substrate and is located in this region. The doping region is an N-type doped fifth-fifth doped region, the fifth doped region is located in the first for the first doped region; the bottom Γ between the Π regions, and the third frame: The fifth doped region is an N-type doped region and is grounded. Within the second well resistance, the second well resistance is connected to the second well: the area and the page 520562. Four doped regions. 20. The voltage regulator circuit according to item 19 of the application, wherein the fifth doped region may be replaced by an isolation region. 2 1. The voltage regulator circuit according to item 19 of the patent application scope, wherein the above isolation area is a shallow trench isolation area. 2 2. The voltage regulator circuit according to item 19 of the scope of patent application, wherein the above-mentioned isolation region is a field oxidation region. 2 3. The voltage regulator circuit according to item 19 of the patent application scope, wherein the second resistor is an N-well resistor. 2 4. The voltage regulator circuit according to item 19 of the scope of patent application, wherein the second resistor is a P-well resistor. Page 20