^___ 經濟部智慧財產局員工消費合作社印製 490362 7975pif.doc/008 ΑΊ __-______ Β7 發明說明（（） 技術領域 本發明是有關於一種平面硏磨裝置，適用於將半導體 晶圓（Wafer)或半導體裝置（device)製程中所得的中間構體 或是半導體裝置之表面或背面平坦化。 技術背景 在+導體裝置結構微細化及配線多層化的趨勢中’爲 謀求高密度、高積集化、高機能化，其製程中的每一個配 線層，皆是在其平坦化後的表面上建構次一個配線層。在 裝置化製程中的晶圓表面之平坦化(planarization)係，解決 光掃瞄（scanning)裝置微影的微細化和焦點深度變淺之問 題點。因其將微影的界限做到更超微細化，而具有良多的 貢獻。 半導體晶圓、半導體裝置及如上所述的半導體裝置製 程中的中間構體之表面及背面的硏磨方法，一般係廣泛採 用所§胃的化學機械硏磨（chemical mechanical polishing， CMP)。 化學機械硏磨(CMP)係，將硏磨砥粒及含有可和被硏 磨面起化學反應的軸刻（etching)劑的硏磨砥液（slurry)供給 到被硏磨面，並在硏磨墊(polishing pad)上硏磨被硏磨面， 故在被硏磨面上會起化學反應並同時硏磨，而達成鏡面硏 磨的技術。在硏磨砥液中所含的硏磨砥粒或是蝕刻劑係視 被硏磨面的材質或硏磨加工的加工速度而有不同的選擇。 在半導體裝置的製造中，CMP適用於一般在①作爲 4 本紙張尺度適用中國國家標準（CNS)A丨規恪（2丨0x297公t ) (請先閱讀背面之注意事項再填寫本頁) ¾ — — —— — — — ·11111111 I —III — — — — — — — — — —— — — ! — ! — — 490362 79^5pif.doc/008 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（1) 絕緣膜的矽之氧化膜之Si〇2的硏磨工程、②多晶矽的硏 磨工程及③金屬膜的硏磨工程。 ① Si02的硏磨工程大致可分爲層間絕緣膜的平坦化 工程和元件間分離的平坦化工程。 層間絕緣膜的平坦化工程係，如第圖所示，在第 1層間絕緣膜71上配設的配線或各元件72上，對建構si02 的絕緣膜73的中間構體，將表面的絕緣膜73以CMP( — 直到圖中虛線a爲止）進行平坦化的工程，並進行平坦化工 程，以順次構建此第1層上的次一個第2層、第3層、第 4層…的配線圖案(pattern)。層間絕緣膜的平坦化工程係， 達成配線多層化之LSI裝置最基本且最重要的工程。 而元件間分離的平坦化係，以Si02膜將相鄰裝置的 元件彼此之間絕緣分離。如第11圖所示，在矽晶圓的基 底上形成溝渠（trench)76，並在其上堆積Si〇2膜77的中 間構體上，將埋入溝渠76內的部分77a以外的Si02膜 77b(-直到圖中的虛線爲止)以CMP去除。此時，在溝渠 形成之後，先把對CMP加工速度非常慢的膜79(例如氮化 砂膜）形成在砂基板78的上面作爲終止層（stopper)，可防 止CMP侵蝕矽基板。 ② 多晶矽的CMP係，將所謂的STI(淺溝渠Shallow hench Isolation)製程之溝渠加深，並將堆積的材料作成多 晶矽的製程，僅在CMP的深溝渠內殘留多晶矽。爲形成 溝渠型電容（capacitor)，因在矽基板表面和溝渠的溝內， (請先閱讀背面之注意事項再填寫本頁) 線· 本紙狀度適用中關家標準（CNS)A.丨㈣⑵〇 x 297公餐^ ___ Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 490362 7975pif.doc / 008 ΑΊ __-______ Β7 Description of the Invention (() TECHNICAL FIELD The present invention relates to a flat honing device suitable for semiconductor wafers (Wafer) The intermediate structure obtained in the semiconductor device (device) process or the surface or back surface of the semiconductor device is flattened. Technical background In the trend of miniaturization of + conductor device structure and multilayer wiring, the trend is to achieve high density and high accumulation. High-performance, each wiring layer in its manufacturing process is to build a next wiring layer on its flattened surface. In the deviceization process, the planarization of the wafer surface solves the optical scanning The problem of miniaturization of scanning device lithography and shallower depth of focus. It has a lot of contributions because it makes the limits of lithography more ultra-fine. Semiconductor wafers, semiconductor devices and the above In the semiconductor device manufacturing process, the honing method of the surface and back of the intermediate structure is generally widely used in chemical mechanical honing (shing, CMP): Chemical mechanical honing (CMP) system, which supplies honing honing grains and honing slurries containing an etching agent that can chemically react with the honing surface. Surface, and honing the honing surface on the honing pad (polishing pad), so there will be a chemical reaction on the honing surface and honing at the same time, to achieve the technology of mirror honing. The honing grains or the etchant contained may vary depending on the material of the honing surface or the processing speed of the honing process. In the manufacture of semiconductor devices, CMP is generally applicable as ① as a 4-paper scale China National Standard (CNS) A 丨 Regulations (2 丨 0x297gt) (Please read the precautions on the back before filling out this page) ¾ — — — — — — 11111111 I —III — — — — — — — — — —— — — — — — — — — 490362 79 ^ 5pif.doc / 008 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (1) Insulating film of silicon oxide film of Si〇2 Honing process, ② Honing process of polycrystalline silicon, and ③ Honing process of metal film ① Si02 The honing process can be roughly divided into a planarization process of the interlayer insulating film and a planarization process of separating the elements. As shown in the figure, the planarization engineering system of the interlayer insulation film is a wiring provided on the first interlayer insulation film 71. Or, on each element 72, the intermediate structure of the insulating film 73 constituting the si02 is planarized by CMP (—until the dotted line a in the figure), and the planarization process is performed to sequentially construct The wiring patterns on the first layer next to the second layer, the third layer, the fourth layer ... The planarization process of the interlayer insulation film is the most basic and important process for achieving LSI devices with multilayer wiring. On the other hand, the planarization system that separates components uses an SiO2 film to isolate and separate components of adjacent devices from each other. As shown in FIG. 11, a trench 76 is formed on the substrate of the silicon wafer, and an Si02 film other than the portion 77 a buried in the trench 76 is deposited on the intermediate structure on which the Si02 film 77 is deposited. 77b (-until the dotted line in the figure) is removed by CMP. At this time, after the trench is formed, a film 79 (for example, a nitrided sand film) that is very slow in CMP processing is first formed on the sand substrate 78 as a stopper to prevent the CMP from eroding the silicon substrate. ② The CMP system of polycrystalline silicon deepens the trench of the so-called STI (Shallow hench Isolation) process, and uses the accumulated material to make the polycrystalline silicon process. Only the polycrystalline silicon remains in the deep trench of the CMP. In order to form a trench capacitor (capacitor), the surface of the silicon substrate and the trench in the trench, (please read the precautions on the back before filling this page). 〇x 297 meals
1'發明說明ο ) 形成酸化膜，故在CMP的時候，可將Si〇2膜作爲終止層。 ③金屬膜的CMP，作爲配線用的金屬膜，有鋁、鎢 及銅。其中，銅具有低阻抗且高電致遷移耐性的優點，故 期待能成爲次世代的配線材料。對於這些配線金屬，因才 剛開始應用於CMP，故蝕刻加工要比用CMP之配線良率 佳。 如第12A圖〜第12C圖所示，形成接觸孔“(contact h〇le)(參照第12A圖），以和絕緣膜81之上層配線和下層 配線82相連結，在其上部對由配線材料構成的金屬膜μ 成膜的中間構體，將溝83以外的部分之金屬以CMP去除 (參照弟12C圖）。此方法稱爲「錶嵌法」（damascene)。使 用此鑲嵌法的場合，和前述的Si〇2膜的CMP不同，由絕 緣膜（Si02膜）作爲終止層。 然而，爲使接觸硏磨墊的荷重（壓力）可由圖案的凸部 所分擔，配線圖案的密度及大小之加工的進行是不能停止 的。結果，如第13A圖所示，因配線圖案密度和尺寸，而 產生配線部過量（over)加工的地方。因爲這樣的原因而產 %生的配線金屬厚度縮小稱之爲「薄形化」（thinning)。此外， 配線部的過量加工主要是起因於硏磨墊的彈性和硏磨砥液 的化學效果，如第13B圖所示，配線部的中央部因加工快 速而產生凹陷。此凹陷狀加工的現象，因類似碟子的凹陷， 而稱爲「碟狀」（dishing)。 在鑲嵌法中，大致會經過①接觸孔開口（Si02膜）、② 6 度適用中國國家標準（CNS)A丨规烙（210 X 297公t ~ ~· (請先閱讀背面之注意事項再填寫本頁) — — — — — II 11111111 · 經濟部智慧財產局員工消費合作社印利 Η 經濟部智慧財產局員工消費合作社印製 490362 7975pif.d〇c/0〇8 發明說明（k) 金屬成膜（Si02膜）、③金屬膜的CMP、④絕緣（Si02)膜的 成膜、⑤配線溝開口（Si02膜）、⑥金屬膜成膜、⑦金屬膜的 CMP等7個工程。在鑲嵌法中，①接觸孔開口（Si02膜）、 ⑤的Si02膜上配線溝之開口係，以一次CMP完成的方法， 即雙重錶嵌法（dual damascene)。 雙重鑲嵌法係，如第14A圖〜第14C圖所示，①在形 成配線或元件91的絕緣膜92(Si02膜）上，將接觸孔93· 配線溝94開口（第14A圖），②對在其上將金屬95成膜的 中間構體，③進行金屬膜95的CMP(第14C圖），一般可 以鑲嵌法之一半以下的製程步驟數完成。此雙重鑲嵌法， 相較於一般進行2次CMP的鑲嵌法，其特點爲1次CMP 之加工傷害等的發生率較低。 當進行金屬膜的CMP時，含有Si02膜，，一定要在 沒有刮傷（scratch)等的加工傷害及污染·異物殘留的條件下 進行。在Si02膜上，在殘留加工傷害的加工條件下進行 CMP，有可能在加工傷害內部跑入微量的配線用金屬的加 工屑，而加工屑橫跨在配線之間便會產生大問題。也就是 說，爲了得到良好的裝置特性，而以鑲嵌法埋入配線，極 爲重要的前提就是，不可因CMP而在絕緣膜（Si02)或是金 屬膜的表面，有刮傷或是硏磨砥液等的異物殘留。 在半導體裝置製程中，以化學機械硏磨（CMP)而達成 平坦化有以下的問題點。1 'Description of the invention ο) An acidified film is formed, so a Si02 film can be used as a termination layer during CMP. (3) The CMP of the metal film includes aluminum, tungsten, and copper as metal films for wiring. Among them, copper has the advantages of low resistance and high electromigration resistance, and is expected to be a next-generation wiring material. Since these wiring metals are just beginning to be applied to CMP, the etching yield is better than that of wiring using CMP. As shown in FIGS. 12A to 12C, a contact hole “(contact hole) (refer to FIG. 12A) is formed, and is connected to the upper wiring and the lower wiring 82 of the insulating film 81, and a wiring material is formed on the upper portion thereof. The formed metal film μ forms an intermediate structure that removes metal in portions other than the groove 83 by CMP (refer to FIG. 12C). This method is called "damascene". When this damascene method is used, unlike the CMP of the Si02 film described above, an insulating film (SiO2 film) is used as the stop layer. However, in order that the load (pressure) that comes into contact with the honing pad can be shared by the convex portions of the pattern, the processing of the density and size of the wiring pattern cannot be stopped. As a result, as shown in FIG. 13A, a place where the wiring portion is over-processed due to the density and size of the wiring pattern. The reduction in thickness of wiring metal produced for this reason is called "thinning." In addition, the excessive processing of the wiring portion is mainly due to the elasticity of the honing pad and the chemical effect of the honing honing liquid. As shown in FIG. 13B, the central portion of the wiring portion is dented due to rapid processing. This phenomenon of dish-like processing is called dishing because of dish-like depressions. In the inlay method, it will pass through ① contact hole opening (Si02 film), ② 6 degrees. Applicable to China National Standard (CNS) A 丨 regulation (210 X 297mm t ~ ~ · (Please read the precautions on the back before filling (This page) — — — — — II 11111111 · Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by the Consumer Cooperative 490362 7975pif.d〇c / 0〇8 Description of the Invention (k) Metal film formation (Si02 film), ③ metal film CMP, ④ insulation (Si02) film formation, ⑤ wiring trench opening (Si02 film), ⑥ metal film formation, ⑦ metal film CMP, etc. 7 projects. In the mosaic method ① The contact hole opening (Si02 film), ⑤ The opening of the wiring trench on the Si02 film is completed by one CMP, namely the dual damascene method. The dual damascene method system is shown in Figures 14A to 14C. As shown in the figure, ① the contact hole 93 and the wiring groove 94 are opened on the insulating film 92 (Si02 film) forming the wiring or element 91 (FIG. 14A), and ② the intermediate structure on which the metal 95 is formed ③ CMP of the metal film 95 (Fig. 14C), generally can be performed by the damascene method The number of process steps is less than half. This double damascene method is characterized by a lower incidence of processing damage and so on than one CMP compared to the general damascene method with two CMPs. When the CMP of a metal film is performed, it contains For the Si02 film, be sure to perform it under conditions where there are no processing injuries such as scratches, and contamination and foreign matter residues. On the Si02 film, performing CMP on the processing conditions with residual processing injuries may run inside the processing injuries. If a small amount of processing metal of wiring metal is inserted into the wiring, it will cause a big problem. In other words, in order to obtain good device characteristics, it is extremely important to embed the wiring by the inlay method. CMP must not cause foreign matter such as scratches or honing baths on the surface of the insulating film (Si02) or the metal film. In the semiconductor device manufacturing process, chemical mechanical honing (CMP) can be used to achieve planarization. The following problem points.
1.在Si02膜的CMP、多晶矽的CMP、金屬膜的CMP 7 本纸張尺度適用中國國家標準（CNS)A4規格（d〇x297公坌） (請先閱讀背面之注音？事項再填寫本頁) 訂· --線· 490362 7975pif.doc/008 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（k ) 中，其各自的被硏磨面材質不同，需要變換硏磨砥液。舉 例而㈡’在夕日日砂的CMP等z中使用強鹼性的膠 質矽（colloidal silica)硏磨液的硏磨中，矽以外的添加物， 如Si02、Si；3N4、Cu及W等的金屬膜，有無法以高效率 硏磨的問題點，又因硏磨液爲強鹼性，不利的是被硏磨材 及其以外部份的材料因化學作用而有被侵蝕的問題點。因 此’隨著半導體裝置之高層化及複雜化，更換硏磨砥液的 次數會增加，而增加CMP工程的作業負擔。 此外，在半導體裝置的製程中，將絕緣膜（如si〇2)、 多晶砂、配線用金屬等的不同材料露出的中間構體硏磨 時，會變成在同一條件下硏磨不同的材料，且有難以在伴 隨著化學反應的CMP中設定加工條件的問題點。 2·配線金屬膜的CMP係以，高純度，高加工率（rate)(金 屬膜及阻障金屬barrier metal)、基礎氧化膜之高選擇性、 表面狀態的改善、安定性、循環使用硏磨砥液及其系統開 發爲課題。例如，在習知的CMP中，強鹼性的膠質矽硏 磨液之硏磨中，不僅無法除去前加工所造成之加工偏差， 尙有因硏磨壓力而有殘留硏磨偏差的問題點。而且，伴隨 著化學作用會發生薄形化和碟狀，而無法達成無偏差平坦 化。 3.尤其是，在Cu配線金屬膜的CMP中，雖Cu是理 想的配線材料，然而，Cu專用的新硏磨砥液之開發尙未 有所進展。而且，在CMP中，有必要在今後變更材料時， 8 本紙張尺度適用中國國家標準（CNS)A·丨規恪（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) - ·. --線· 490362 7975pif.d〇c/0〇8 A7 B7 五 經濟部智慧財產局員工消費合作社印製 發明說明（c ) 開發對應的硏磨砥液。 4. 此外，因爲在CMP中使用的硏磨砥液爲PH10的強 鹼液，搬運困難，且硏磨液的廢液處理也有困難，膠質矽 硏磨材一旦乾燥便會固著，會有無法洗淨的問題點。 5. 很難在被硏磨面維持均一的化學作用，容易產生硏 磨面偏差的問題。 如上所述，化學機械硏磨（CMP) ’雖爲可達成高度鏡 面硏磨的加工方法，然而，由不同材質聚合所組成的半導 體裝置等的硏磨，會伴隨著化學作用而產生問題。 於此，本發明的目的係，提供一種平面硏磨裝置，以 謀求半導體裝置等無偏差平坦化加工之精密硏磨，其係改 變化學機械硏磨（CMP)，而利用一種全新的硏磨手法。 發明之揭露 申請專利範圍第1項所記載之平面硏磨裝置，其特徵 在於，包括：一支持裝置，支持一被加工物、一硏磨具’ 和被加工物之欲硏磨的平面呈相對運動、以及一硏磨砥液 供給裝置，將一硏磨砥液供給到平面和硏磨具之間，利用 形成於平面和硏磨具之間的硏磨砥液之流，在非接觸的狀 態下硏磨平面。 本發明之平面硏磨裝置係，在硏磨過程中，在被加工 物欲硏磨表面和硏磨具之間會形成微小間隙。在硏磨砥液 供給到此微小間隙的同時，使被加工物之被硏磨面和硏磨 墊相對移動，將硏磨砥液中的硏磨砥粒以高速且銳角的方 9 (請先閱讀背面之注意事項再填寫本頁) . 線· 本紙張尺度適用中國國家標準（CNS)A丨規格（21〇χ 297公釐） ^0362 ^0362 經濟部智慧財產局員工消費合作社印製 7975pif.doc/008 --------- B7 ____ 五、發明說明（Ί ) 式衝突到被硏磨面上。此衝突會在被硏磨面上產生極微小 量破壞的現象，而以非接觸硏磨的方式進行硏磨。利用此 極微小量破壞現象之硏磨手法，因在機械硏磨中無伴隨化 學作用，故與被加工物的化學性質無關，可達均一的機械 硏磨，而可實現偏差極小的鏡面硏磨。因此特適用於無偏 差平坦化要求的精密硏磨。 申請專利範圍第2項所記載之平面硏磨裝置，其特徵 在於，上述硏磨胝液係和上述平面不起化學反應者。 申請專利範圍第3項所記載之平面硏磨裝置，其特徵 在於，上述被加工物包括一半導體晶圓。 申請專利範圍第4項所記載之平面硏磨裝置，其特徵 在於，上述被加工物包括由一半導體裝置製程所得的一中 間構體。此處所謂的「中間構體」是指，在半導體裝置製 程中所得的中間體，舉例而言，如習知所述的第10圖、 第11圖、第12A圖、第13A圖、第13B圖及第14B圖所 示的狀態者皆含有中間構體。 申請專利範圍第5項所記載之平面硏磨裝置，其特徵 在於，上述被加工物包括一半導體裝置。 申請專利範圍第6項所記載之平面硏磨方法，其特徵 在於，包括：在一被加工物之欲硏磨的平面和一硏磨具之 間提一相對運動、供給一硏磨砥液到平面及硏磨具之間、 利用形成於平面和硏磨具之間的硏磨砥液之流，以非接觸 狀態硏磨平面。 (請先閱讀背面之注意事項再填寫本頁) •t· -I I I I I I 訂·----I I I I · 本纸張尺度適用中國國家標準（CNS)Al規格（210 x 297公釐） 490362 7975pif.doc/〇〇8 A7 五 經 濟 部 智 慧 財 產 局 員 工 消 費 合 社 印 製 發明說明（飞） 申請專利範圍第7項所記載之平面硏磨方法，其特徵 在於’上述硏磨砥液係和上述平面不起化學反應者。 爲讓本發明之上述和其他目的、特徵、和優點能更 明顯易懂’下文特舉一較佳實施例，並配合所附圖式，作 詳細說明如下： 圖式之簡笔I兌明 第1圖繪示本發明之平面硏磨裝置A之斜視圖； 第2圖繪示本發明之平面硏磨裝置a之側視剖視圖； 第3圖繪示硏磨半導體晶圓之平面硏磨裝置b之斜 視圖； . 第4圖繪示硏磨精密光學零件的平面硏磨裝置c之 斜視圖； 第5圖繪不本發明之平面硏磨裝置〇之側視剖視圖； 第6圖繪示本發明之平面硏磨裝置〇之平面圖； 第7A圖及第7B圖繪示本發明之平面硏磨裝置之硏 磨墊之其他實施例之示意圖； 第8圖繪示本發明之平面硏磨裝置E之斜視圖； 第9圖繪示平硏磨裝置工程之手順流程示意圖； 第10圖繪示層間絕緣膜之平坦化工程的CMP之中 間構體之剖視圖； 第11圖繪示元件間分離之平坦化工程的CMP之中 間構體之剖視圖； 第12A圖〜第12C圖繪示鑲嵌法之加工手順之中 間 (請先閱讀背面之注意事項再填寫本頁) --------訂-------線 _· 本紙張尺度國國家標準（CNSM.4規 11 經濟部智慧財產局員工消費合作社印製 490362 7 9 7 5pif · d〇c/008 _B7_ 五、發明說明（Θ ) 構體之剖視圖； 第13A圖繪示薄形化之中間構體剖視圖； 第13B圖繪示碟狀之中間構體剖視圖； 第14A圖〜第14C圖繪7^雙重金屬鑲嵌法之加工手 順之中間構體剖視圖。 圖式標號之簡單說明 1、51、65:硏磨液槽 2:中間構體 2a、31a、41a:被硏磨面 3、54、70:回轉台（turn table) 4:第1驅動部 5、57:硏磨圓筒 60是硏磨圓筒 6:第2驅動部 11: 基台咅B 12、32、42:載置部 14、52:導軌 16:機械手臂 1 7:第1驅動機構 21、58:回轉軸 22:中間軸部 23、59、68:硏磨墊 24:軸承 本紙張尺度適用中國國家標準（CNS)A.丨規格（21〇χ 297公釐） (請先閱讀背面之注意事項再填寫本頁) - ---I---訂-----— II ·線- 490362 7975pif.doc/008 __B7_ 五、發明說明) 26:第2驅動機構 27:馬達 28:皮帶 (請先閱讀背面之注意事項再填寫本頁) 29:第3驅動機構 31:半導體晶圓 41:精密光學零件 43:固定治具 53:基台 55、63、69:被加工物 56:被加工物固定部 61、62:突起 64:支持裝置。 66、67:滑輪(pulley) 71:層間絕緣膜 72、91:元件 73:絕緣膜 76:溝渠(trench) 77: Si02 膜 經濟部智慧財產局員工消費合作社印製 77a:埋入溝渠76內的部分 77b:埋入溝渠76內以外的Si02膜 78:矽基板 79:終止層（stopper) 81、92:絕緣膜 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公堃） 五 發明說明（ν' ) 82:下層配線 A7 B7 經濟部智慧財產局員Η消費合作社印製 83:溝 84:金屬膜 93:接觸孔 94:配線溝 95:金屬 A、B、C、D、E:平面硏磨裝置 較佳實施例_ 以下，將按照本發明實施例之平面硏磨裝置說明之。 本發明之平面硏磨裝置係，採用上述微小量破壞現 象之非接觸硏磨手法。 本發明之第1實施例之平面硏磨裝置A係，硏磨半 導體裝置製程中所得的中間構體2，如第1圖及第2圖所 示，其具有:充滿硏磨抵液的硏磨液槽1、在硏磨液槽i中 搭載中間構體2且回轉的回轉台（turn table)3、使回轉台3 在（如圖中箭頭X所示)X方向上往復運動的第1驅動部4、 在回轉台3之上作爲對中間構體回轉之硏磨具的硏磨圓筒 5、使硏磨圓筒5回轉並相對於回轉台3在（如圖中箭頭γ 所示）Y方向往復運動的第2驅動部6。 投入硏磨液槽之硏磨砥液係，採用中性的硏磨砥液， 以抑制化學反應，例如使用黏度l〇〇cp〜200cp，粒徑 m〜10// m的砥粒，砥粒以外可使用含有膠質黏土的中性硏 磨砥液。作爲硏磨砥粒者，可使用例如Sic、A1203、Si02、 本紙張尺度適用中國國家標準（CNS)A.l規烙（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) · 線· 975pif.doc/008 A7 B7 五、發明說明（r^)1. CMP on Si02 film, CMP on polycrystalline silicon, CMP on metal film 7 This paper size applies to Chinese National Standard (CNS) A4 specification (d〇x297 cm) (Please read the note on the back? Matters before filling out this page ) Order --- line 490362 7975pif.doc / 008 A7 B7 Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. In the description of the invention (k), the materials of their respective honing surfaces are different, and the honing honing liquid needs to be changed . As an example, in the honing of CMP, etc., which uses strong alkaline colloidal silica honing fluid, additives other than silicon, such as SiO2, Si; 3N4, Cu, and W, etc. The metal film has the problem that it cannot be honed with high efficiency, and because the honing liquid is strongly alkaline, it is disadvantageous that the material to be honed and other parts have the problem of erosion due to chemical action. Therefore, as the semiconductor device becomes high-level and complicated, the number of times for replacing the honing liquid is increased, which increases the workload of the CMP process. In addition, in the manufacturing process of semiconductor devices, when honing an intermediate structure that exposes different materials such as insulating films (such as SiO2), polycrystalline sand, and wiring metal, it will become a different material under the same conditions. In addition, there is a problem that it is difficult to set processing conditions in a CMP accompanied by a chemical reaction. 2 · The CMP of the wiring metal film is based on high purity, high processing rate (metal film and barrier metal), high selectivity of the basic oxide film, improvement of surface state, stability, and cyclic honing. The development of mash and its system is a topic. For example, in the conventional CMP, in the honing of the strongly alkaline colloidal silicon halide polishing liquid, not only the processing deviation caused by the pre-processing cannot be removed, but also the problem of residual honing deviation due to the honing pressure. In addition, thinning and dishing occur due to chemical action, and flatness without deviation cannot be achieved. 3. In particular, in the CMP of a Cu wiring metal film, although Cu is an ideal wiring material, the development of a new honing fluid for Cu has not progressed. Moreover, in the CMP, when it is necessary to change the material in the future, 8 paper sizes are applicable to the Chinese National Standard (CNS) A · 丨 Regulations (210 X 297 mm) (Please read the precautions on the back before filling out this page) -·. --Line · 490362 7975pif.d〇c / 0〇8 A7 B7 Five employees of the Intellectual Property Bureau of the Ministry of Economic Affairs printed a description of the invention (c) Development of the corresponding honing solution. 4. In addition, because the honing honing liquid used in CMP is a strong alkaline solution of PH10, it is difficult to handle, and the waste liquid of the honing liquid is also difficult to handle. Once the colloidal silicon honing material is dried, it will be fixed and there will be no Wash the problem points. 5. It is difficult to maintain uniform chemical action on the honing surface, and it is easy to cause the problem of honing surface deviation. As mentioned above, although chemical mechanical honing (CMP) 'is a processing method capable of achieving a high degree of mirror honing, honing of semiconductor devices and the like composed of different materials may cause problems due to chemical action. Here, the object of the present invention is to provide a flat honing device for precise honing of unbiased flattening processing such as semiconductor devices, which changes the chemical mechanical honing (CMP) and uses a new honing method . The flat honing device according to the first patent application scope disclosed in the disclosure of the invention is characterized in that it includes: a support device supporting a workpiece, a honing tool, and the plane of the workpiece to be honed. Movement and a honing honing liquid supply device, which supplies a honing honing liquid between the flat surface and the honing tool, and uses the flow of the honing honing liquid formed between the flat surface and the honing tool in a non-contact state. Lower honing plane. In the flat honing device of the present invention, during the honing process, a small gap is formed between the surface to be honed of the workpiece and the honing tool. While the honing honing liquid is supplied to this small gap, the honing surface of the workpiece and the honing pad are relatively moved, and the honing honing particles in the honing honing liquid are at a high speed and an acute angle. 9 (Please first Read the notes on the reverse side and fill in this page). Thread · This paper size applies Chinese National Standard (CNS) A 丨 specifications (21〇χ 297 mm) ^ 0362 ^ 0362 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 7975pif. doc / 008 --------- B7 ____ 5. The description of the invention (Ί) conflicts with the honing surface. This conflict will cause a very small amount of damage on the honing surface, and the honing will be performed in a non-contact honing manner. The honing method using this extremely small amount of destruction phenomenon has no accompanying chemical action in mechanical honing, so it has nothing to do with the chemical properties of the processed object. It can achieve uniform mechanical honing, and can realize mirror honing with minimal deviation. . Therefore, it is especially suitable for precision honing which requires flatness without deviation. The flat honing device described in the second patent application range is characterized in that the honing honing liquid system and the flat surface do not react chemically. The planar honing device described in item 3 of the scope of patent application, wherein the object to be processed includes a semiconductor wafer. The planar honing device described in item 4 of the scope of the patent application is characterized in that the object to be processed includes an intermediate structure obtained by a semiconductor device manufacturing process. The “intermediate structure” here refers to an intermediate obtained in the process of manufacturing a semiconductor device. For example, as shown in FIG. 10, FIG. 11, FIG. 12A, FIG. 13A, and 13B Each of the states shown in FIG. 14B includes an intermediate structure. The planar honing apparatus described in the scope of the patent application No. 5 is characterized in that the object to be processed includes a semiconductor device. The flat honing method according to item 6 of the scope of the patent application, which is characterized in that it includes: providing a relative movement between a plane to be honed and a honing tool, and supplying a honing honing liquid to The plane is honed in a non-contact state by the flow of the honing honing fluid formed between the plane and the honing tool. (Please read the notes on the back before filling in this page) • t · -IIIIII order · ---- IIII · This paper size is applicable to China National Standard (CNS) Al specification (210 x 297 mm) 490362 7975pif.doc / 〇〇8 A7 Five planes honing method described in the patent application scope of the Intellectual Property Bureau of the Ministry of Economic Affairs's Consumers' Cooperatives, which is characterized by the above-mentioned honing honing liquid system and the above-mentioned planes. Chemical reaction. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is exemplified below, and in conjunction with the accompanying drawings, the detailed description is as follows: Fig. 1 shows a perspective view of a plane honing device A of the present invention; Fig. 2 shows a side cross-sectional view of a plane honing device a of the present invention; Fig. 3 shows a plane honing device b of a honing semiconductor wafer b Fig. 4 is a perspective view of a plane honing device c for honing precision optical parts. Fig. 5 is a side sectional view of the plane honing device 0 of the present invention. Fig. 6 is a view showing the present invention. Plan view of the flat honing device 0; Figures 7A and 7B are schematic views showing other embodiments of the honing pad of the flat honing device of the present invention; Figure 8 shows the flat honing device E of the present invention Oblique view; Figure 9 shows a schematic diagram of the smooth flow of the flat honing device project; Figure 10 shows a cross-sectional view of the CMP intermediate structure of the planarization process of the interlayer insulation film; Figure 11 shows the planarization of the separation between the components Sectional view of the intermediate structure of the CMP project; Figure 12A Figure 12C shows the middle of the processing method of the mosaic method (please read the precautions on the back before filling this page) -------- Order ------- Line _ · National Standards of This Paper Size (Regulation of CNSM.4 11 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 490362 7 9 7 5pif · doc / 008 _B7_ V. Sectional view of the structure of the invention description (Θ); Figure 13A shows the middle of the thinning Sectional view of the structure; FIG. 13B is a cross-sectional view of the intermediate structure in the shape of a dish; FIGS. 14A to 14C are cross-sectional views of the intermediate structure of the processing method of the double metal inlay method. 65: Honing liquid tank 2: Intermediate structure 2a, 31a, 41a: Honed surface 3, 54, 70: Turn table 4: First driving part 5, 57: Honing cylinder 60 is honing Grinding cylinder 6: Second drive section 11: Abutment 咅 B 12, 32, 42: Mounting section 14, 52: Guide rail 16: Robot arm 1 7: First drive mechanism 21, 58: Rotary shaft 22: Intermediate shaft Parts 23, 59, 68: Honing pads 24: Bearings The paper size applies to Chinese National Standard (CNS) A. 丨 specifications (21〇χ 297 mm) (Please read the precautions on the back before filling this page)-- --I- --Order ------- II · Line-490362 7975pif.doc / 008 __B7_ V. Description of the invention 26: 2nd drive mechanism 27: Motor 28: Belt (Please read the precautions on the back before filling this page) 29: 3rd drive mechanism 31: Semiconductor wafer 41: Precision optical component 43: Fixture 53: Abutment 55, 63, 69: Workpiece 56: Workpiece fixing part 61, 62: Protrusion 64: Support device . 66, 67: Pulley 71: Interlayer insulating film 72, 91: Element 73: Insulating film 76: Trench 77: Si02 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 77a: Buried in the trench 76 Part 77b: Si02 film buried inside trench 76, 78: Silicon substrate 79: Stopper 81, 92: Insulating film This paper applies the Chinese National Standard (CNS) A4 specification (210 x 297 cm). Five inventions Explanation (ν ') 82: Lower wiring A7 B7 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 83: trench 84: metal film 93: contact hole 94: wiring trench 95: metal A, B, C, D, E: flat The preferred embodiment of the honing device_ Hereinafter, the flat honing device according to the embodiment of the present invention will be described. The flat honing apparatus of the present invention employs the non-contact honing method of the above-mentioned small amount of destruction phenomenon. The plane honing device A of the first embodiment of the present invention, the intermediate structure 2 obtained in the process of honing a semiconductor device, as shown in FIGS. 1 and 2, has a honing filled with a honing resistance liquid. Liquid tank 1, turn table 3 with intermediate structure 2 mounted in honing liquid tank i, and rotary table 3, first drive for reciprocating the rotary table 3 in the X direction (shown by arrow X in the figure) Part 4. The honing cylinder 5 as a honing tool for rotating the intermediate structure on the rotary table 3, and the honing cylinder 5 is rotated and is opposite to the rotary table 3 (as shown by the arrow γ in the figure) Y The second driving unit 6 that reciprocates in the direction. The honing honing liquid system that is put into the honing liquid tank uses a neutral honing honing liquid to suppress chemical reactions. For example, the use of a particle with a viscosity of 100 cp to 200 cp and a particle size of m to 10 // m, Other than this, a neutral honing solution containing colloidal clay can be used. As a honing grain, you can use, for example, Sic, A1203, Si02, this paper size is applicable to Chinese National Standard (CNS) Al gauge (210 X 297 mm) (Please read the precautions on the back before filling this page) · Line · 975pif.doc / 008 A7 B7 V. Description of the invention (r ^)
Se〇2的砥粒。更佳的是，硏磨砥液爲，和中間構體欲硏 磨之平面不起化學反應之化學性質安定者。 回轉台3係，裝設於內藏回轉機構的基台部1 1上， 其具有載置部12，在回轉台3的中央上夾住中間構體的周 端部並可將之水平搭載，其可使中間構體2在周方向上回 轉或搖動。 載置部12，舉例而言，在對應中間構體2的周形狀 和厚度而形成的窪部中，因其周面具有橡皮等止滑或夾頭 (chuck)機構，故將要硏磨的面(被硏磨面2a)朝上，將中間 構體嵌入即可。基台部11內藏的回轉機構爲，舉例而言， 以內藏在基台部11內的馬達動力，將回轉台3以比硏磨 圓筒5之回轉速度慢的方式回轉或搖動。 回轉台3係搭載於舖設在硏磨液槽1之底部的導軌 14上，且沿著導軌14可移動地配設。 第1驅動部4係，具有機械手臂16及第1驅動機構 17。其中，機構手臂16係，一端安裝在回轉台3的基台 部11上，通過設在硏磨液槽1側面且具有密封（seal)的孔（圖 示省略），另一端延伸到硏磨槽1之外。第1驅動機構17 係，使位於硏磨液槽1外部的機械手臂16在軸方向上直 線往復運動。第1驅動機構17係，舉例而言，由內藏的 馬達動力，將回轉台3以比硏磨圓筒5的回轉速度慢的方 式，使之直線往復運動。 硏磨圓筒5係將硏磨墊23捲在硏磨液槽1內呈水平 (請先閱讀背面之注意事項再填寫本頁) Ϊ線- 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)Al規格（210 x 297公釐） 490362 A7 B7 7 9 7 5pi f · / 〇〇 8 五、發明說明（p) 軸支持的回轉軸21之中間軸部上。回轉軸21係，一 端以配設在硏磨液槽1之側面的軸承24(參照第2圖）軸支 持著，透過在硏磨液槽1之側面上具密封及軸承器（bearing) 的軸承，將另一端連接到第2驅動部6。硏磨塾23爲由具 備所需剛性之彈性材料所構成的硏磨墊。此硏磨墊，舉例 而言，可以是由聚氨基甲酸乙酯等的樹脂材料形成者，亦 可採用多孔的軟質硏磨墊材等。 硏磨圓筒5係，在回轉台3的載置部12上搭載的中 間構體2上，將硏磨墊23的外周面設置成要連接的高度。 此高度的調整係，舉例而言，可交換回轉台3的載置部12 的零件、並將搭載的中間構體2連接到硏磨圓筒5的硏磨 墊23，對應於中間構體2的厚度和硏磨圓筒5的硏磨墊23 之間隙，爲可交換載置部12者。此外，亦可以對應搭載 於回轉台3的載置部12的中間構體2之被硏磨面2a的高 度，將硏磨圓筒5的高度做成可調整者。而且，亦可以將 搭載於載置部12的中間構體2之被硏磨面2a的高度做成 可調整成合於回轉台3之周面的高度。 第2驅動部6係，如第2圖所示，具有第2驅動機 構26及第3驅動機構29。第2驅動機構係，透過馬達’ 將位於硏磨液槽1之外部的回轉軸2 1，在軸方向上直線往 復運動。第3驅動機構29係利用馬達27及皮帶28，使回 轉軸21回轉。 以下，將說明本平面硏磨裝置A之作用。 本紙張尺度適用中國國家標準（CNS)Al規格（21〇χ 297公t ) (請先閱讀背面之注意事項再填寫本頁) 訂---------線一 經濟部智慧財產局員工消費合作社印製 490362 A7 B7 經濟部智慧財產局員工消費合作社印製 9^5pif.doc/〇〇8 五、發明說明（β ) 利用本平面硏磨裝置A硏磨中間構體2的場合係， 將要硏磨的面朝上，把中間構體2嵌入回轉台3的載置部 12內，將硏磨圓筒5的硏磨墊23輕押到中間構體2上， 在此狀態下，將硏磨砥液投入硏磨液槽內充分侵泡到中間 構體2的高度爲止。 在此狀態下，使回轉台3在周方向上回轉或搖動， 同時利用第1驅動機構17，使回轉台3在導軌14上沿著 X方向直線往復運動，並且利用第3驅動機構29使硏磨 圓筒5回轉。又，因回轉台3的回轉或搖動、回轉台3的 直線往復運動、及硏磨圓筒5的軸方向往復運動爲’緩慢 改變硏磨位置的動作，所以其作動的速度要比硏磨圓筒5 的回轉速度爲慢。 此時，伴隨著硏磨圓筒5的回轉，硏磨砥液會被引 入到硏磨圓筒5的硏磨墊23和中間構體2之被硏磨面2a 之間。此時，受到引入的硏磨砥液的壓力，硏磨墊23會 彈性變形，而在硏磨墊23和中間構體2的被硏磨面2a之 間會形成微小間隙。 此微小間隙，因引入的硏磨砥液的流路狹小’故硏 磨砥液的流速增加，硏磨砥液內含有的硏磨砥粒會以高速 且銳角的方式衝突到中間構體2的被硏磨面2a，由於此衝 突的能量（energy)，中間構體2在被硏磨面2a上會產生極 微小量的破壞現象，因而可進行高精度的硏磨加工。此平 面硏磨裝置A，和硏磨墊23爲非接觸的方式，且因流過 本紙張尺度適用中國國家標準（CNS)yV1規格（21〇 x四7公t ) 03^ 言 (請先閱讀背面之注意事項再填寫本頁)SeO2 particles. More preferably, the honing fluid is a chemically stable one that does not react chemically with the plane of the intermediate structure to be honing. The turntable 3 series is installed on the base portion 11 of the built-in turning mechanism, and has a mounting portion 12 that clamps the peripheral end portion of the intermediate structure on the center of the turntable 3 and can be mounted horizontally. It can rotate or shake the intermediate structure 2 in the circumferential direction. The mounting portion 12 is, for example, a recessed portion formed in accordance with the circumferential shape and thickness of the intermediate structure 2, and a peripheral surface has a surface such as a rubber or a chuck mechanism. (Honing surface 2a) faces upward, and the intermediate structure can be inserted. The turning mechanism incorporated in the base portion 11 is, for example, a motor rotating in the base portion 11 to rotate or swing the turntable 3 at a slower speed than the turning speed of the honing cylinder 5. The turntable 3 is mounted on a guide rail 14 laid on the bottom of the honing bath 1, and is movably arranged along the guide rail 14. The first drive unit 4 includes a robot arm 16 and a first drive mechanism 17. Among them, the mechanism arm 16 is one end mounted on the base part 11 of the turntable 3, and the other end extends to the honing tank through a hole (not shown) provided on the side of the honing liquid tank 1 and having a seal. 1 other. The first driving mechanism 17 is configured to reciprocate the robot arm 16 outside the honing bath 1 linearly in the axial direction. The first drive mechanism 17 is, for example, powered by a built-in motor to rotate the turntable 3 linearly and reciprocally at a slower speed than the rotation speed of the honing cylinder 5. The honing cylinder 5 is a roll of the honing pad 23 in the honing fluid tank 1 (please read the precautions on the back before filling this page). Honing Line-Printed by paper Applicable to China National Standard (CNS) Al specification (210 x 297 mm) 490362 A7 B7 7 9 7 5pi f · / 〇008 V. Description of the invention (p) The intermediate shaft of the rotary shaft 21 supported by the shaft. The rotating shaft 21 is supported by a bearing 24 (refer to FIG. 2) disposed on the side of the honing liquid tank 1 at one end, and a bearing having a seal and a bearing on the side of the honing liquid tank 1 is supported. , Connect the other end to the second drive section 6. Honing paddle 23 is a honing pad made of an elastic material having a desired rigidity. For example, the honing pad may be formed of a resin material such as polyurethane, or a porous soft honing pad may be used. The honing cylinder 5 is a system in which the outer peripheral surface of the honing pad 23 is set to a height to be connected to the intermediate structure 2 mounted on the mounting portion 12 of the turntable 3. This height adjustment system, for example, can exchange parts of the mounting portion 12 of the turntable 3 and connect the mounted intermediate structure 2 to the honing pad 23 of the honing cylinder 5 to correspond to the intermediate structure 2 The thickness and the clearance between the honing pads 23 of the honing cylinder 5 are interchangeable with the mounting portion 12. In addition, the height of the honing cylinder 5 may be adjusted in accordance with the height of the honing surface 2a of the intermediate structure 2 mounted on the mounting portion 12 of the turntable 3. In addition, the height of the honing surface 2a of the intermediate structure 2 mounted on the mounting portion 12 may be adjusted to fit the height of the peripheral surface of the turntable 3. The second drive unit 6 includes a second drive mechanism 26 and a third drive mechanism 29, as shown in Fig. 2. The second drive mechanism is a motor that moves the rotary shaft 21 located outside the honing bath 1 linearly in the axial direction. The third drive mechanism 29 rotates the rotary shaft 21 using a motor 27 and a belt 28. Hereinafter, the function of the flat honing apparatus A will be described. This paper size applies the Chinese National Standard (CNS) Al specification (21〇χ 297 metric t) (Please read the notes on the back before filling this page) Order --------- Line 1 Intellectual Property Bureau of the Ministry of Economic Affairs Printed by an employee consumer cooperative 490362 A7 B7 Printed by an employee consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 9 ^ 5pif.doc / 〇〇8 V. Description of the invention (β) The use of this plane honing device A honing intermediate structure 2 With the side to be honed facing up, insert the intermediate structure 2 into the mounting portion 12 of the turntable 3, and press the honing pad 23 of the honing cylinder 5 onto the intermediate structure 2 lightly. In this state, The honing honing liquid is poured into the honing liquid tank to sufficiently infuse to the height of the intermediate structure 2. In this state, the turntable 3 is rotated or shaken in the circumferential direction, and the first drive mechanism 17 is used to cause the turntable 3 to reciprocate linearly on the guide rail 14 in the X direction. The grinding cylinder 5 rotates. In addition, since the turning or shaking of the rotary table 3, the linear reciprocating motion of the rotary table 3, and the axial reciprocating motion of the honing cylinder 5 are the actions of slowly changing the honing position, the operating speed is faster than the honing circle. The rotation speed of the barrel 5 is slow. At this time, as the honing cylinder 5 rotates, the honing honing liquid is introduced between the honing pad 23 of the honing cylinder 5 and the honing surface 2a of the intermediate structure 2. At this time, the honing pad 23 is elastically deformed by the pressure of the honing honing liquid introduced, and a small gap is formed between the honing pad 23 and the honing surface 2a of the intermediate structure 2. In this small gap, the flow rate of the honing honing liquid increases due to the narrow flow path of the honing honing liquid. The honing grit contained in the honing honing liquid will collide with the intermediate structure 2 at a high speed and at an acute angle. Honed surface 2a. Due to the conflicting energy, the intermediate structure 2 will cause a very small amount of damage on the honed surface 2a, so that it can perform high-precision honing processing. The plane honing device A and the honing pad 23 are non-contact, and because of the size of the paper flowing through the paper, the Chinese National Standard (CNS) yV1 specification (21〇x4 7mm t) is used. (Notes on the back then fill out this page)
490362 A7 B7 7975pif.doc/008 五、發明說明（θ) 中間構體2的被硏磨面2a表面的硏磨抵液流係使硏磨砥 粒衝突而進行硏磨，故可將中間構體2的被硏磨面2a均 一地硏磨。 因回轉台3係，將載置部丨2慢慢地搖動，且因回轉 台3係慢慢地直線往復運動，故在中間構體2的被硏磨面 2a上，硏磨圓筒5的位置會慢慢的變化，而可進行被硏磨 面2a之全面硏磨。 此平面硏磨裝置係，無伴隨著化學作用，而爲機械 硏磨，即使在中間構體2上，對於不同的材料露出被硏磨 面2a的場合，可達機械均一的硏磨，而與不同材料的化 學性質無關，故皆可利用非接觸方式的微小量破壞現象進 行硏磨，而達成偏差極少的鏡面硏磨。亦即，此平面硏磨 裝置係，特別適用於在加工面上露出不同材料的半導體裝 置及半導體裝置製程中所得的中間構體之無偏差平坦化的 精密硏磨。 此平面硏磨裝置並不限於半導體裝置，對於半導體 晶圓表面或是背面的無偏差平坦化亦適用。如第3圖所示 的平面硏磨裝置B，亦可以將上述的平面硏磨裝置a的回 轉台3的載置部12，替換成可搭載圓板狀半導體晶圓31 的載置部32，把要硏磨的面（被硏磨面31a)朝上，將半導 體晶圓31設置在載置部32上，和上述的平面硏磨裝置a 之中間構體2的硏磨一樣，以將半導體晶圓31浸入到硏 磨砥液的狀態進行非接觸硏磨。 本中闕家標準（CNS)A.l 297公f ) (請先閱讀背面之注意事項再填寫本頁) 丨t·^-------訂---------線· 經濟部智慧財產局員工消費合作社印製 490362 7 97 5pi f . doc/〇〇8 經濟部智慧財產局員工消費合作社印製 B7 五、發明說明（4) 此外，在精密光學的分野中，欲進行比現今更高精 度的光學處理時，需要比精密光學零件更高精度的鏡面加 上。此平面硏磨裝置係，因可達成高精度的無偏差平坦化， 故可適用於精密光學零件的鏡面硏磨。 如第4圖所示的平面硏磨裝置C，因將上述的平面 硏磨裝置A的回轉台3之載置部12，替換成以複數個四 角柱狀的精密光學零件41並排固定的載置部42,如圖示， 將要硏磨的端面（被硏磨面41a)朝上，利用固定治具43， 將並排的精密光學零件41以固定的狀態固定在載置部42 上，和上述的平面硏磨裝置A的中間構體2之硏磨一樣， 在精密光學零件41浸入硏磨砥液的狀態下進行非接觸硏 磨。 其次，說明本發明之平面硏磨裝置的其他實施例。 此平面硏磨裝置D係，如第5圖及第6圖所示’具 有鋪設於硏磨液槽51底部的導軌52、在立設於導軌52上 的狀態下搭載的平板上的基台53、配設於基台53兩面的 回轉台54、固定回轉台54表面的被加工物55的被加工物 固定部56、分別配設在兩側的被加工物固定部56上呈對 向的硏磨圓筒57。如第6圖所示，硏磨圓筒57的外周係 將硏磨墊59捲在回轉軸58上。 此平面硏磨裝置D係，將硏磨圓筒57設定（set)成輕 輕接觸到固定於被加物固定部56的被加工物55的狀態’ 將硏磨砥液投入硏磨液槽51，完全浸到將被加工物55的 19 本紙張尺度適用中國國家標準（CNS)A丨規格（210x297公t ) --- (請先閱讀背面之注意事項再填寫本頁) 言—'490362 A7 B7 7975pif.doc / 008 V. Description of the invention (θ) The honing of the surface of the honing surface 2a of the intermediate structure 2 against the liquid flow system causes the honing grains to conflict and perform honing, so the intermediate structure can be honed. The honing surface 2a of 2 is honed uniformly. Since the rotary table 3 series slowly shakes the mounting part 2 and the rotary table 3 series slowly reciprocates linearly, the honing surface 2a of the intermediate structure 2 hones the cylinder 5 The position will change slowly, and full honing of the honing surface 2a can be performed. This plane honing device system is mechanical honing without accompanying chemical action. Even on the intermediate structure 2, for different materials exposing the honing surface 2a, it can achieve mechanical uniform honing, and The chemical properties of different materials are irrelevant, so they can be honed by using a small amount of non-contact destruction phenomenon to achieve mirror honing with minimal deviation. That is, this plane honing device is particularly suitable for precision honing of semiconductor devices with different materials exposed on the processing surface and intermediate structures obtained during semiconductor device manufacturing without deviation and flattening. This planar honing device is not limited to a semiconductor device, and is also suitable for unbiased flattening of the surface or back surface of a semiconductor wafer. As in the planar honing apparatus B shown in FIG. 3, the mounting section 12 of the turntable 3 of the planar honing apparatus a described above may be replaced with a mounting section 32 capable of mounting a disc-shaped semiconductor wafer 31. With the honing surface (the honing surface 31a) facing upward, the semiconductor wafer 31 is set on the mounting portion 32, as in the honing of the intermediate structure 2 of the flat honing device a described above, so that the semiconductor is polished. The wafer 31 is immersed in the honing honing liquid to perform non-contact honing. Chinese Standard (CNS) Al 297 male f) (Please read the precautions on the back before filling this page) 丨 t-^ ------- order --------- line · economic Printed by the Consumers' Cooperative of the Ministry of Intellectual Property Bureau 490362 7 97 5pi f.doc / 〇〇8 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs B7 V. Invention Description (4) In addition, in the field of precision optics, Today's higher-precision optical processing requires mirrors with higher precision than precision optical parts. This flat honing device is suitable for mirror honing of precision optical parts because it can achieve high-precision, flatness-free flattening. As shown in FIG. 4, the flat honing device C is replaced with the mounting part 12 of the rotary table 3 of the flat honing device A described above, and is mounted side by side with a plurality of rectangular prism-shaped precision optical parts 41. As shown in the figure, the end surface to be honed (the honing surface 41a) faces upward, and the side-by-side precision optical parts 41 are fixed to the mounting portion 42 in a fixed state by using a fixing jig 43, and the above-mentioned In the same manner as the honing of the intermediate structure 2 of the flat honing device A, the non-contact honing is performed while the precision optical component 41 is immersed in the honing honing liquid. Next, another embodiment of the flat honing apparatus according to the present invention will be described. As shown in FIGS. 5 and 6, the plane honing device D has a guide rail 52 laid on the bottom of the honing liquid tank 51 and a base 53 on a flat plate mounted in a state of standing on the guide rail 52. The turntable 54 disposed on both sides of the base 53, the workpiece fixing portion 56 fixing the workpiece 55 on the surface of the rotary table 54, the workpiece fixing portions 56 disposed on both sides of the workpiece facing each other. Grinding cylinder 57. As shown in Fig. 6, the outer periphery of the honing cylinder 57 winds the honing pad 59 around the rotary shaft 58. This plane honing device D is a state where the honing cylinder 57 is set to lightly contact the workpiece 55 fixed to the to-be-fixed part 56. The honing honing liquid is put into the honing liquid tank 51. 19 paper sizes fully immersed in the object 55 to be processed. Applicable to China National Standard (CNS) A 丨 specifications (210x297mm t) --- (Please read the precautions on the back before filling this page)
490362 7975pif.doc/〇〇8 A7 五 聲曰月說明（0 ) 高度爲止，使硏磨圓筒57回轉同時上下慢慢地直線往復 運動，使基台53沿著導軌52慢慢地直線往復運動。在硏 磨圓筒57回轉的狀態下，其和被加工物55之間的硏磨墊 59會受液壓而彈性變形，因而形成其和被加工物55之間 | 的微小間隙。 | 背 以此方式，和上述的平面硏磨裝置A的中間構體2定 注 之硏磨一樣，在被加工物55浸入到硏磨砥液內的狀態下 _ 進f了非接觸硏磨。 以上，雖說明了本發明之平面硏磨裝置的實施例， 但本發明並非僅限定如上述。 舉例而言，亦可以使捲在硏磨圓筒上的硏磨墊之外 表面上具有凹凸狀，使得硏磨圓筒和被硏磨面之間的硏磨 砥液的動壓作用發生得更有效率，而將硏磨砥液引到硏磨 圓筒和被硏磨面之間◦以此方式，硏磨砥液會受到硏磨圓 筒周圍的拘束而可望提昇硏磨效率。又，在硏磨圓筒上形 成的凹凸狀係’如第7A、7B圖所示，剖面爲四角形的突 起61，亦可考慮具有剖面爲梯形或是楔狀的突起62者。 且’在第7A圖、7B圖中，60是硏磨圓筒，63是被加工 項 再 填 寫 本 頁 訂490362 7975pif.doc / 〇〇8 A7 Five-month description (0) To the height, the honing cylinder 57 is rotated while reciprocating slowly and linearly up and down, and the abutment 53 is slowly reciprocating linearly along the guide rail 52 . When the honing cylinder 57 is rotated, the honing pad 59 between the honing cylinder 57 and the workpiece 55 is elastically deformed by hydraulic pressure, thereby forming a small gap between the honing cylinder 57 and the workpiece 55. In this way, as in the case of the intermediate structure 2 of the flat honing apparatus A described above, the non-contact honing is performed while the workpiece 55 is immersed in the honing honing liquid. Although the embodiment of the flat honing apparatus of the present invention has been described above, the present invention is not limited to the above. For example, the outer surface of the honing pad rolled on the honing cylinder can also have irregularities, so that the dynamic pressure effect of the honing honing liquid between the honing cylinder and the honing surface occurs It is effective to introduce the honing honing liquid between the honing cylinder and the honing surface. In this way, the honing honing liquid will be restrained around the honing cylinder and the honing efficiency is expected to be improved. In addition, as shown in Figs. 7A and 7B, the uneven-shaped system formed on the honing cylinder is a projection 61 having a quadrangular cross section, and a projection 62 having a trapezoidal or wedge-shaped cross section may be considered. Moreover, in Figs. 7A and 7B, 60 is a honing cylinder, and 63 is a processed item.
濟 部 智 慧 財 產 局 員 工 消 費 合 社 印 物，64是表示支持被加工物的支持裝置。 如第8圖所示的平面硏磨裝置Ε，硏磨墊是在硏磨 液槽65上配設的2個滑輪（pulley)66、67之間呈張力（tension) 狀態鋪設回轉之皮帶狀（belt)的硏磨墊68,回轉驅動滑輪 66、67，使得硏磨墊68被回轉。即，在此場合，被加工 20 本紙張尺度適用中國國家標準（CNS)A.丨規格0^0、297公釐） ^0362 975pif.doc/008 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（νϊ ) 物69係，搭載於引導搭乘且直線往復運動的回轉台70上， 可望同時回轉或搖動。 而且，上述的平面硏磨裝置係，如第9圖之流程圖 所示，搬入欲硏磨的被加工物之第1工程si、在平面硏磨 裝置的設置部之被加工面上，將欲硏磨的平面朝上以設定 被加工物之第2工程s2、利用平面硏磨裝置，硏磨被加工 物之第3工程S3、將平面硏磨裝置硏磨的被加工物沖水 (shower)洗淨之第4工程、將被加工物以刷洗機（brush scrubber)洗淨之第5工程s5、將被加工物以甩（spin)乾機 乾燥之第6工程s6、將乾燥後的被加工物運送到搬出部之 第7工程s7，順次地構成以機械人(robot)進行的系統，因 此可達硏磨作業的自動化並可縮短硏磨時間。 且，上述第5工程s5中，利用刷洗機之洗淨工程希 望能分成粗洗淨及最後洗淨2次。 本發明之平面硏磨裝置係，如上所述，在硏磨砥液 中以非接觸硏磨的方式，利用極微小量破壞現象進行硏 磨，因此可達成偏差極少的鏡面硏磨，半導體晶圓、半導 體裝置及半導體裝置製程中所得的中間構體之表面或背面 的硏磨、精密光學零件之一定端面之硏磨、要求高精度無 偏差平坦化的平面硏磨皆可適用。 本發明的平面硏磨裝置係具有：支持被加工物的支持 裝置、對前述被加工物欲硏磨之平面相對運動之硏磨具、 將硏磨砥液供給到前述平面和硏磨具之間的硏磨砥液供給 (請先閱讀背面之注意事項再填寫本頁) •裝 · 丨線· 本紙張尺度適用中國國家標準（CNS)A·丨規格（210 x 297公t ) ^02 7 975pif .doc/ 00 8 A/ _SZ___ 五、發明說明（A) 裝置，在硏磨過程中，在引入前述被硏磨面和硏磨墊之聞 的硏磨砥液中，將形成於硏磨墊和被硏磨面之間的微小間 隙，利用將硏磨砥粒以高速且銳角的方式衝突到被加X面 以產生極微小量破壞現象的硏磨手法，因此，與被加:!：物 的化學性質無關，可達均一的機械硏磨，因而可達成偏姜 極小的平坦化。 因此，本發明適用於半導體晶圓、半導體裝置製程 所得的中間構體、半導體裝置之無偏差平化處理等的用 途。 本發明之平面硏磨方法係，給予被加工物欲硏磨的 平面和硏磨具之間相對運動，將硏磨砥液供給到前述平面 和硏磨具之間，利用在前述平面和硏磨具之間形成的硏磨 砥液流，將前述平面在非接觸狀態上進行硏磨’利用極微 小量破壞現象’可達成偏差極小的平坦化。 在本發明中，因前述硏磨砥液係使用不會和前述平 面起化學反應者’可達成完全不影響被加工物欲硏磨平面 的化學性質之硏磨。 經濟部智慧財產局員工消費合作社印製 Γ%先閱讀背面之注意事項再填寫本頁)Printed by the Intellectual Property Office of the Ministry of Economic Affairs and Consumer Affairs, 64 is a support device that indicates support for the processed object. As shown in FIG. 8, the honing pad E is equipped with a honing pad in the state of tension between two pulleys 66 and 67 provided on the honing liquid tank 65. (Belt) the honing pad 68 and the rotation driving pulleys 66 and 67, so that the honing pad 68 is rotated. That is, in this case, 20 paper sizes are processed to comply with Chinese National Standards (CNS) A. 丨 Specifications 0 ^ 0, 297 mm) ^ 0362 975pif.doc / 008 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the Invention (νϊ) Object 69 is mounted on a turntable 70 that guides the ride and linearly reciprocates. It is expected to rotate or shake at the same time. In addition, as shown in the flowchart of FIG. 9, the above-mentioned plane honing device is a first process si for carrying in a workpiece to be honed, and on the processed surface of the installation part of the plane honing device, The second process s2 of the honing plane is set up with the honing plane facing up. The third process S3 of honing the workpiece by the plane honing device is used to shower the workpiece honing the plane honing device (shower). The fourth process of washing, the fifth process of washing the processed object with a brush scrubber, s5, the sixth process of drying the processed object with a spin dryer, s6, and processing after drying The seventh process s7 of the conveyance of the material to the unloading unit sequentially constitutes a system performed by a robot, so that the honing operation can be automated and the honing time can be shortened. Moreover, in the fifth process s5, the cleaning process using the brush washing machine is expected to be divided into rough cleaning and final cleaning twice. The planar honing apparatus of the present invention, as described above, uses a non-contact honing method in the honing honing liquid to perform honing by using a very small amount of destruction. Therefore, it is possible to achieve mirror honing with minimal deviation, and semiconductor wafers. 2. The honing of the surface or the back of the intermediate structure obtained in the semiconductor device and the semiconductor device manufacturing process, the honing of a certain end face of a precision optical part, and the flat honing that requires high-precision, non-deviation flattening. The plane honing device of the present invention includes a supporting device for supporting a workpiece, a honing tool for relatively moving a plane to be honed on the workpiece, and supplying a honing honing liquid between the plane and the honing tool. Honing solution supply (please read the precautions on the back before filling out this page) • Loading · 丨 Line · This paper size applies to China National Standard (CNS) A · 丨 specifications (210 x 297 g t) ^ 02 7 975pif. doc / 00 8 A / _SZ___ 5. Description of the Invention (A) During the honing process, the device introduces the honing honing liquid of the honing surface and the honing pad, which will be formed on the honing pad and the honing pad. The small gap between the honing surfaces uses a honing technique that conflicts the honing honing particles at a high speed and an acute angle to the X surface to be added to produce a very small amount of damage. Therefore, it is related to the chemistry of the added:!: 物It has nothing to do with nature, and can achieve uniform mechanical honing, so that it can achieve minimal flattening of ginger. Therefore, the present invention is suitable for applications such as semiconductor wafers, intermediate structures obtained from semiconductor device manufacturing processes, and unbiased planarization of semiconductor devices. The flat honing method of the present invention is to provide relative movement between a flat surface to be honed and a honing tool, and supply honing honing liquid between the flat surface and the honing tool. The honing honing liquid flow formed between the surfaces can be honed in a non-contact state 'using a very small amount of destruction phenomenon' to achieve flattening with extremely small deviations. In the present invention, since the honing honing liquid is used, a person who does not chemically react with the surface can achieve honing that does not affect the chemical properties of the object to be honed at all. Printed by the Intellectual Property Bureau's Consumer Cooperatives of the Ministry of Economic Affairs Γ% Please read the notes on the back before filling in this page)
ΐ紙張尺度適用中國國家標準(CNS)A4規格（210 X 297公釐）ΐPaper size applies to China National Standard (CNS) A4 (210 X 297 mm)