TW477731B - Closed-loop concentration control system for chemical mechanical polishing slurry - Google Patents
Closed-loop concentration control system for chemical mechanical polishing slurry Download PDFInfo
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477731 五、發明說明(l) 5 - 1發明領域: 本發明是有關於一種化學機械研磨漿(c h e m i c a 1 mechanical polishing slurry ; CMP slurry),且特別 是有關於一種化學機械研磨漿(CMP slurry)之閉環(close loop)濃度控制系統。 5-2發明背景: 積體電路(Integrated circuit; 1C)的發展日趨複 雜,用於製造方面的製程之規格要求更是越來越高。當一 個單獨的晶片上的活動元件之積集度的要求逐步提升時, 在晶圓的表面上之全長距與短距或是頂部與底部也發展至 需要較佳的平坦化之條件。因此,在積體電路(I c)的製 造方面,半導體基底表面的平坦性具有其相當的重要性。 此外’平坦度亦將改善填充介層洞與穿透介電層中孔洞的 能力。 平坦化已經用於各種製程當中。而現今在高度要求的 應用中最為人所熟知者為化學機械研磨法(chemica][ mechanical p〇lishing; CMp)。化學機械研磨法(CMp) 係為現今唯一能夠在超大型積體電路(ultra-large scale integration; ULSI)t程中提供一種全面性平坦化477731 V. Description of the invention (l) 5-1 Field of the invention: The present invention relates to a chemical mechanical polishing slurry (chemica 1 mechanical polishing slurry; CMP slurry), and particularly relates to a chemical mechanical polishing slurry (CMP slurry) Closed loop (close loop) concentration control system. 5-2 Background of the Invention: The development of integrated circuits (1C) is becoming more complex, and the specifications for manufacturing processes are becoming higher and higher. As the requirements for the accumulation of moving elements on a single wafer have gradually increased, the full-length and short-distances on the surface of the wafer, or the top and bottom, have also evolved to conditions that require better planarization. Therefore, in the manufacture of integrated circuits (I c), the flatness of the surface of the semiconductor substrate is of considerable importance. In addition, the 'flatness' will also improve the ability to fill and penetrate holes in the dielectric layer. Flattening has been used in various processes. The most well-known of today's highly demanding applications is the chemical mechanical polishing (chemica) [mechanical polinging; CMp). Chemical Mechanical Polishing (CMp) is the only comprehensive flattening method available today in ultra-large scale integration (ULSI) circuits.
第4頁 477731 五、發明說明(2) i IT1、PlanariZti〇n)的技術。此項技術係來自於國際 口二认械公司(I BM) ’經由國際商業機械公司的數十年的 研究f展’化學機械研磨法(CMp)已經成功地應用在諸多 ϋ〇口>^上’例如’摄處理器(Central Processing Unit; •等。化學機械研磨法(CMp)的原理為利用類似磨刀 I^n 1 fe grinder)的機械式研磨方式,再配合以適當的化 =f ( reagent),以便於能夠將晶片(wafer)表面之 问-已伏不一的輪廓一併加以磨平的平坦化技術。簡而言 ^ ^學機械研磨法(CMP)的製程牵涉到在化學、壓力與 二ί而控制條件之下,靠著一濕式研磨表面來支撐與旋轉 ,1與I坦化之半導體基底,一旦各製程的參數控制適當 “、械研磨法(CMP)將相當驚人地提供被研磨表面高 ^社i ^上的平坦度。這是因為在研磨的期間,材料的移 ί^工機械和化學的作用,此將導致研磨過的表面具有 度。因&,全世界的半導體薇商以及半導體設 Γ pMp\予助劑的供應商,皆相繼地投入化學機械研磨法 (LMP)的技術之開發中。 的f積體電路(IC)製造的期間,為了從晶圓(wafer) 镇^ η上移除材料與灰塵,就必須將半導體材料研磨成一 早Γ二。如習知的化學機械研磨法(CMP)製程,典型的例 研ί埶一濕式的化學磨蝕料或是研磨漿用在一馬達驅動之 十罐片上緊靠著-半導體晶圓。研磨平台 後者权性濕式的材料,例如聚氨酯。在研磨墊片Page 4 477731 V. Description of the invention (2) i IT1, PlanariZtin) technology. This technology comes from the International Confectionery Corporation (I BM) 'Through decades of research by the International Business Machines Corporation' The Chemical Mechanical Polishing Method (CMp) has been successfully applied in many ϋ〇 口 > ^ The above example is "Central Processing Unit; • etc. The principle of the chemical mechanical grinding method (CMp) is to use a mechanical grinding method similar to a sharpening knife (I ^ n 1 fe grinder), and then cooperate with the appropriate chemical = f (reagent), in order to be able to smooth the wafer (wafer) surface-converged contours together flattening technology. In short, the process of mechanical polishing (CMP) involves the support and rotation of a wet polishing surface under the control of chemistry, pressure, and two, 1 and 1 semiconductor substrates, Once the parameters of each process are properly controlled, the mechanical polishing method (CMP) will provide a surprisingly high level of flatness on the surface being polished. This is because during the grinding process, the materials are moved mechanically and chemically. This will cause the polished surface to have a degree. Because of this, semiconductor semiconductor suppliers worldwide and suppliers of semiconductor equipment Γ pMp \ preparatives have successively invested in the technology of chemical mechanical polishing (LMP). During the development of f integrated circuit (IC) manufacturing, in order to remove materials and dust from wafers, it is necessary to grind semiconductor materials as early as possible. Such as conventional chemical mechanical polishing (CMP) process, a typical example of a wet-type chemical abrasive or polishing slurry is used on a motor-driven ten cans close to the-semiconductor wafer. The polishing platform is a weight-wet material. For example polyurethane. On abrasive pads
477731 五、發明說明(3) ―綠卜^ ί面的同時,晶圓(Waf er)與墊片兩者在不同的 、曰^ ,轉動使得包含研磨漿在内的磨蝕料易於傳送 堂S二與墊片之間。因此,研磨墊片與研磨漿的 ^ — 9 料的研磨與研磨表面之平坦度的要求來加以 決疋。 磨法(CMP)同g g二=,==擊晶圓表面時,化學機械研 短距上的表面材料” 2,損來加強移除覆蓋於長距與 用一鐘151 P Μ 枓。有鉍於此,化學機械研磨法(CMP)應 學研磨漿:二有磨蝕作用與化學活性成分之研磨漿。-化 是二氧化石/(二?化f研磨劑’例如氧化銘)或 化學研磨漿亦勺丄1ca) ’以便於當成一磨蝕原肖。此外’ 期fl,# Μ π I 3 了一種選擇性的化學品,其可於製程的 因i化與盥嫌问的基底表面。因此,晶圓上的研磨效果導 口方;化干人钱械的雙重作用。 化學機械研磨法(CMP)製程上的再現性( reproducibility)與一致性(unif〇rmity)需要對研磨漿 進饤週期性的測量與嚴謹的控制。傳統典型的研磨漿之配 :,由氧化劑(例如硝’酸鐵;f e r r i c n i t r a t e)與一分 ,:粒(例如氧化鋁;a丨um i na)而來。其他的實例中則是 ,,一種預混(pre —mixing)研磨漿。在製程上對整體研 f毅維持精確地控制相當地重要,因為研磨漿的穩定性可 p牛低整體的時間。部分研磨漿不穩定的成因可歸因於氧化477731 V. Description of the invention (3) ―At the same time as the green surface, the wafer (wafer) and the pad are in different positions, and the rotation makes the abrasive material including the abrasive slurry easy to transfer. Between the gasket. Therefore, the requirements for the flatness of the grinding and polishing surfaces of the abrasive pads and slurry are determined. Grinding method (CMP) is the same as gg ===== When hitting the wafer surface, CMP researches the surface material on the short distance "2. It is used to strengthen the removal of the long distance and use 151 P Μ 枓. There is bismuth Here, the chemical mechanical polishing method (CMP) should learn the polishing slurry: two abrasive slurry with abrasive effect and chemically active ingredients.-Chemical is a stone dioxide / (dioxide f abrasives such as oxide Ming) or chemical polishing slurry Also spoon 1ca) 'In order to be used as an abrasion primitive. In addition, the period fl, # Μ π I 3 is a selective chemical that can be used in the manufacturing process and the suspected substrate surface. Therefore, The polishing effect guide on the wafer; the dual role of drying human money. The reproducibility and uniformity of the chemical mechanical polishing (CMP) process require periodic polishing of the polishing slurry. Measurement and rigorous control. The traditional typical grinding slurry is matched by: an oxidant (such as ferricnitrate; ferricnitrate) and a particle: (such as alumina; a 丨 um i na). Other examples In the middle, it is a kind of pre-mixing grinding slurry. It is important to maintain precise control of the overall research, because the stability of the slurry can be lower than the overall time. The cause of the instability of some slurry can be attributed to oxidation.
477731 五、發明說明(4) 劑被,表面積的微粒子吸收而導致氧化劑的濃度降低。此 外’氧化劑的濃度由於混合誤差與用於調製研磨漿之原氧 化劑中不確定的變因而造成變化。在化學機械研磨法(CMP )製程中,由於氧化劑的濃度係為控制金屬移除速率( removal rate ; R· R)的關鍵參數之一,所以氧化劑濃度的 變異極可能在化學機械研磨法(CMP)的製程期間導致移除 速率達到顯著的變化。 因此,在化學機械研磨法(CMP)的製程期間,對於氧 化劑的濃度需加以監控與量測。傳統方法之一係為預混法 (p r e 1 i X i n g),其先將研磨漿(例如s s w 2 0 0 〇)與氧化劑 (例如過氧化氫;Η 20 2)預先混合之後,再將預混溶液以過 錳酸鉀(KMnOO進行滴定(titrati〇n),以便於測得混 合後的化學濃度。滴定方程式如第一圖所示,液位濃度係 依照當時的電位差計算而得到,方程式的計算如下:方程 式(1) X 2+方程式(2) X 方程式(3)。但是在大 氣中,過猛酸钟(Κ Μ η 0 4)與預滿溶液皆會有衰退(d e c a y )的現象,因此容易造成化學機械研磨法(CMP)中移除速 率(R · R )的變異。另一種傳統的方法係為一種埠端混合法 (port to port mixing),亦即將研磨漿與氧化劑在機台 端點混合,由於氧化劑的濃度較高但是量卻較少,造成果 (pump)不易控制。再者,傳統的方式並無法即刻補償氧 化劑的不足量。477731 V. Description of the invention (4) The agent is absorbed by the particles on the surface area, which causes the concentration of the oxidant to decrease. In addition, the concentration of the oxidant varies due to mixing errors and uncertain changes in the original oxidant used to prepare the slurry. In the chemical mechanical polishing (CMP) process, since the concentration of the oxidant is one of the key parameters to control the metal removal rate (R · R), the variation of the oxidant concentration is most likely to occur during the chemical mechanical polishing (CMP) A significant change in removal rate was caused during the process of). Therefore, during the CMP process, the concentration of the oxidant needs to be monitored and measured. One of the traditional methods is a pre-mixing method (pre 1 i X ing), which first mixes a grinding slurry (for example, ssw 2 0 0 〇) with an oxidant (for example, hydrogen peroxide; Η 20 2) before pre-mixing The solution was titrated with potassium permanganate (KMnOO) in order to determine the chemical concentration after mixing. The titration equation is shown in the first figure, and the liquid level concentration was calculated according to the potential difference at that time. The calculation of the equation It is as follows: Equation (1) X 2+ Equation (2) X Equation (3). However, in the atmosphere, both the excessively acidic clock (KM η 0 4) and the pre-filled solution will have a phenomenon of decay, so It is easy to cause variation in the removal rate (R · R) in chemical mechanical polishing (CMP). Another traditional method is a port-to-port mixing method, that is, the polishing slurry and the oxidant are at the end of the machine. Mixing, because the concentration of the oxidant is high but the amount is small, it is difficult to control the pump. Moreover, the traditional method cannot immediately compensate for the insufficient amount of the oxidant.
第7頁 477731 五、發明說明(5) 鑒於上述之種種原因,我們更需要一種新改良的化學 機械研磨漿之濃度控制的方法。以便於提昇後續製程的產 率以及良率。 5 - 3發明目的及概述: i 鑒於上述之發明背景中,傳統的雙重金屬鑲嵌製程, 其所產生的諸多缺點,本發明提供一方法可用以克服傳統 製程上的問題。 本發明的目的是在提供一種化學機械研磨漿之濃度控 制法,本發明係藉由閉環控制來達到連續監控濃度的要求 ,以改善使用滴定法時無法即刻補償氧化劑的不足量的問 題,如此就能夠解決上述之問題。 本發明的另一目的是在提供一種化學機械研磨漿之閉 環濃度控制法,由於氧化劑與研磨漿在超音波液體濃度檢 測器(ultrasonic liquid concentration analyzer)之 中並不會衰退(decay),因此,不會影響濃度的穩定度。 所以,本發明可藉由超音波液..體jUj倉測器來測定容積内 之氧化劑的濃度,並且得到一固定濃度。因此本發明可有 效地提高製程上的良率。Page 7 477731 V. Description of the invention (5) In view of the above-mentioned reasons, we need a new and improved chemical mechanical polishing slurry concentration control method. In order to improve the yield and yield of subsequent processes. 5-3 Purpose and Summary of the Invention: i In view of the above-mentioned background of the invention, the traditional double metal damascene process has many disadvantages. The present invention provides a method to overcome the problems of the traditional process. The purpose of the present invention is to provide a chemical mechanical polishing slurry concentration control method. The present invention achieves the requirement of continuous monitoring of the concentration by closed-loop control, in order to improve the problem that the insufficient amount of oxidant cannot be immediately compensated when using the titration method. Can solve the above problems. Another object of the present invention is to provide a closed-loop concentration control method of a chemical mechanical polishing slurry. Since the oxidant and the polishing slurry do not decay in an ultrasonic liquid concentration analyzer, therefore, Does not affect the stability of the concentration. Therefore, in the present invention, the concentration of the oxidizing agent in the volume can be measured by the ultrasonic fluid .. body jUj chamber detector, and a fixed concentration can be obtained. Therefore, the present invention can effectively improve the yield in the process.
第8頁 477731 五、發明說明Page 8 477731 V. Description of the invention
根據以上所述之目的,本發明揭示了一種化學機械研 磨漿之閉環濃度控制法。在本發明的實施例中,首先將氧 化劑(例如過氧化氫;hoe 、原料漿(例如ssw2〇〇〇)與去 離子水(deionize water; D.I water)經由各個管路輸送 入混合槽(bl end tank)中攪拌混合以形成一研磨漿。然 後將此研磨裝經由管路輸送至分配槽(distributi〇n tank )中。再彳之分配槽將研磨漿經由管路送入一閉環控制系統 中’此系統包含超音波濃度檢測器、類比控制閥(ana丨〇gAccording to the above-mentioned purpose, the present invention discloses a closed-loop concentration control method for a chemical mechanical polishing slurry. In the embodiment of the present invention, first, an oxidant (for example, hydrogen peroxide; hoe), a raw material slurry (for example, ssw2000), and deionized water (DIion water) are sent to a mixing tank (bl end) through each pipeline. tank) and mixing to form a grinding slurry. This grinding device is then transferred to a distribution tank (distribution tank) via a pipeline. The distribution tank then sends the grinding slurry through a pipeline to a closed-loop control system ' This system includes an ultrasonic concentration detector, an analog control valve (ana 丨 〇g
valve)、可程式控制器(pr〇gram L〇gic controller; PLCvalve), programmable controller (pr〇gram L〇gic controller; PLC
)與官路控制Is °研磨漿會先進入超音波濃度檢測器之中 ’以便於進行濃度測定。然後,管路控制器控制研磨漿經 由回流官路回到分配槽中。此外,超音波濃度檢測器所測 定的貧料係為一當時的;^體速麁,此測定值可經由記憶資 料表(memory data table)來換算成當時的重量百分比濃) And the official control Is ° slurry will first enter the ultrasonic concentration detector ’to facilitate concentration measurement. Then, the pipeline controller controls the slurry to return to the distribution tank through the return flow path. In addition, the lean material measured by the ultrasonic concentration detector is at that time; ^ body speed 麁, this measurement value can be converted into the weight percentage concentration at that time by the memory data table
其換异的方式可藉由電腦或是人工運算。所換算的重 =百分比濃度倉料會傳輸到可程式控制器(PLC)中,此 % ’分配槽内的液位體積實料也會傳輸到可程式控制器( iLC)^中,可程/控制器(PLC)可藉此判斷氧化劑是否足 ϊ。氧化劑若是不足,可程式控制器(pLC)將會控制類比 控制閥,並將氧化劑的補充量經由類比控制閥送入分配槽 中。分配槽中的一部分研磨液經由回流管送回混合槽中, 亚重複上述步驟,直到取得一固定濃度值並且持續地進行 上述步驟以維持此固定的濃度值。The way of changing can be computer or manual calculation. The converted weight = percentage concentration of the bin material will be transmitted to the programmable controller (PLC), and the% 'volumetric volume material in the distribution tank will also be transmitted to the programmable controller (iLC) ^. The controller (PLC) can determine whether the oxidant is sufficient. If the oxidant is inadequate, the programmable controller (pLC) will control the analog control valve and send the replenishment of the oxidant to the distribution tank via the analog control valve. A part of the polishing liquid in the distribution tank is returned to the mixing tank through the return pipe, and the above steps are repeated until a fixed concentration value is obtained and the above steps are continuously performed to maintain the fixed concentration value.
第9頁 477731Page 9 477731
5 - 4發明的詳細說明: 本發明的較佳實施例會 洋細描述之外,本發明還可 中’且本發明的範圍不受限 詳細描述如下,然而除了這些 以廣泛地施行在其他的實施例 定’其以之後的專利範圍為準5-4 Detailed description of the invention: In addition to the detailed description of the preferred embodiments of the present invention, the present invention can also be described, and the scope of the present invention is not limited. The detailed description is as follows. Decide 'which shall be subject to the scope of the subsequent patents
斤參考第二圖所示,首先將去離子水(D. I water)經由 弟斤進料官路2 1 0、氧化劑(例如過氧化氫3 〇% ; η 2〇 J經 由第二進料管路(feed Pi Ping) 220與原料漿(例如SSW2 〇〇〇 )、t由第二進料管路23 0—起送入一第一輸送管路31〇内。 然後將此混合進料經由第一輸送管路3 1 〇輸送至混合槽( blend tank) 2 5 0中攪拌混合以形成一研磨漿。然後將此研 磨漿經由第二輸送管路32 0送入分配槽(distribution tank) 260中。 從分配槽2 6 0之中將研磨漿經由第三輸送管路3 3 0送入 一閉環濃度控制系統4 0 0中,此閉環濃度控制系統4 0 〇至少 包含一超音波濃度檢測器2 7 0、一管路控制器2 8 0、可程式 控制器(P L C) 2 9 0與一控制閥3 0 0,該控制閥3 0 0可為一類 比控制閥(a na 1 〇g va 1 v e)。研磨漿會先進入超音波濃度 檢測器 2 7 0之中,以便於進行濃度測定。然後,經由管路 控制器 2 8 0控制研磨漿從第四輸送管路3 4 0回到分配槽2 6 0As shown in the second figure, firstly, deionized water (D. I water) is fed through the official feed channel 2 10, oxidant (such as hydrogen peroxide 30%; η 2〇J through the second feed pipe). Feed Pi Ping 220 and raw material pulp (for example, SSW2000), t are fed from a second feed line 230 to a first conveyance line 31. This mixed feed is then passed through the first A conveying pipe 3 1 0 is conveyed to a blend tank 2 50 to be stirred and mixed to form a grinding slurry. The grinding slurry is then sent to a distribution tank 260 through a second conveying line 32 0. The grinding slurry is sent from the distribution tank 2 60 to a closed-loop concentration control system 4 0 through the third conveying pipe 3 3 0. The closed-loop concentration control system 4 0 0 includes at least an ultrasonic concentration detector 2 7 0, a pipeline controller 2 8 0, a programmable controller (PLC) 2 9 0 and a control valve 3 0 0, the control valve 3 0 0 can be an analog control valve (a na 1 〇g va 1 ve). The slurry will first enter the ultrasonic concentration detector 270 to facilitate the concentration determination. Then, it will pass through the pipeline controller 280 Control the refining slurry from the fourth conveying pipe 3 4 0 back to the distribution tank 2 6 0
第10頁 477731Page 10 477731
中 ο 此外,超音波濃度檢測器2 70所、 料係為一當時的流體速度,此測h 2 ^义的研磨漿原始資 memory data table)來換算成當5的= 5 = 1憶資料表( 換算的方式可藉由電腦或是人工運管。二比濃度,其 比濃度資料將會經由一第一資料=斤換异的重量百分 〜lssl〇n 1ιη“ =路"ata 士 ,. 寻輸到可程式控制哭(pt η 9 q η 中,此時,分配槽2 6 0内的液位體 」二—(PL〇 “Ο 料傳輸線(data transmissi〇n u、)38 ^經由第二貢 制器(29〇中L可^1^38 0傳輪到可程式控 此判斷氧化劑是否足量。氧化劑( PLC) 29〇可藉 (PLC) 2 9 0將會經由第三資料傳輸^疋/ jn4,可程式控制器 3。〇,且經由類比控制閥3。〇將氧化劑的 從 管路240經由第六輸送管路36G送人分配槽26q中。弟四進枓 分配槽260中的,一部分研磨液經由第五輸送管路35〇送 ::匕合槽2 5 0中’亚重複上述步驟,直到取得—固定濃度 ,並且持續地進行上述步驟以維持此固定的濃度值。來考 弟二圖所不’盲先將含有一氧化齊"例如HA 3〇% )之原 枓漿(例如SSW2 0 0 0)經由一第—進料管路51〇送入混合栌 yo中’以形成一研磨漿。從混合才曹5〇〇之中將研磨裂經由 弟一輸送管路520送入一閉環控制系統65〇中,此閉環控制 糸統6 5 0包含超音波濃度檢測器53 0、管路控制器54〇、可Ο In addition, the ultrasonic concentration detector 2 70, the material system is a fluid velocity at the time, this measured h 2 ^ meaning of the original grinder pulp data (memory data table) to convert to 5 = 5 = 1 memory data table (The conversion method can be carried out by computer or manual operation. Two specific concentration, its specific concentration data will be passed through a first data = weight percent of different weight ~ lssl0n 1ιη "= road " ata person, Search for the programmable control cry (pt η 9 q η, at this time, the liquid level in the distribution tank 2 60 ""-(PL〇 "〇 data transmission line (data transmissionu,) 38 ^ The Nigong controller (29 ° L can be ^ 1 ^ 38 0. It is programmable to determine whether the oxidant is sufficient. The oxidant (PLC) 29 ° can be borrowed (PLC) 2 9 0 will be transmitted via the third data ^疋 / jn4, programmable controller 3. 0, and sends the oxidant from the pipeline 240 to the distribution tank 26q via the sixth conveying pipeline 36G via the analog control valve 3. 〇 The fourth into the distribution tank 260 , A part of the grinding liquid is sent through the fifth conveying pipe 35o :: 合 合 槽 2 5 0 '亚 Repeat the above steps until a fixed concentration is obtained And continue to carry out the above steps to maintain this fixed concentration value. Let ’s test the original picture (such as SSW2 0 0 0) containing oxidized oxidants " such as HA 30% > The first-feeding line 51 is fed into the mixing tank yo to form a grinding slurry. The grinding crack is sent from the mixing tank 500 to a closed-loop control system 65 through the first feeding line 520. This closed-loop control system 6 50 includes an ultrasonic concentration detector 53 0, a pipeline controller 54 0, and
477731 五、發明說明(9) '程式控制器(PLC) 57〇與控制間 — 丨控制閥(analog。 ,控制閥600可為—類 1檢測器530之中,以便於進二會先進人超音波濃度 控制器540控制研磨漿從 辰上測$。然後,藉著管路 中。 、吕路550回到混合槽500 i 此外,超音波濃度檢測器 料係為一當時的流體速度,此測所測定的研磨漿原始資 memory data table)來換算成者=可經由記憶資料表( 換算的方式可藉由電腦或是人工重1百分比濃度,其 比濃度資料會經由第一資料傳輪線:。所換算的重量百分 transmission line) 5 6 0傳輸到可 j^ata的 中,此時,混合槽5 0 0内的液位體=:控制器(pLC) 570 料傳輪線(data transmission u 、貧料也會經由第二資 制器(PLC) 5 7 0中,然後,可程式二5j〇傳輪到可程式控 此判斷氧化劑是否足量。氧化劑若3制” (pLC) 570可藉 (PLC) 5 7 0將會經由第三資料傳輪線<路^妒=呈式控制器 6 0 〇,且經由類比控制閥6 0 〇將氧化 …工,類比控制閥 管路610經由第三輸送管路62 〇送補充量從第二進料 上述步驟,直到取得一氧化劑的固:^上00中。並重複 |行上述步驟以維持此固定的濃度值。/辰又值益且持續地進 + 在本發明的實施例之中,提供了一 之閉環濃度控制系統。第四圖揭示Ύ + 予機械研磨漿 ^ 了本發明的方法流程步 477731 五、發明說明(ίο) 驟,超音波濃度檢測器 11 0所檢測的氧化劑濃度資料將會 傳送至可程式控制器(PLC) 1 20中,再由可程式控制器(PLC )1 2 0控制氧化劑控制閥1 3 0,將補充氧化劑送入混合製程 1 4 0中,接著重複上述流程。超音波濃度檢測器的操作理 論如下:Lv係為流體的超音波速率(ultrasonic velocity ),且流體的超音波速率與流體的液位體積模數(1 i qu i d bulk modulus; B)以及流體的密度(density; D)相關, 因此,L v= F ( B,D)。L%係為流體的重量百分比濃度,且 流體的重量百分比濃度與流體的超音波速率以及流體的溫 度(temperature; T)相關,因此,L% 二 F( Lv,T)。所 以,只要測量流體當時的速度與溫度,就能夠藉由儲存在 記憶體中的資料庫來計算出濃度,如第五圖所示。 根據本發明,研磨漿也可在研磨漿製程的線上作業( on- 1 i ne )中進行自動控制。因此,本發明係藉由閉環控制 來達到連續監控濃度的要求,以改善滴定時無法即刻補償 氧化劑不足量的問題。由於氧化劑與研磨漿在超音波液體 濃度檢測器之中並不會衰退(decay),因此,不會影響濃 度的穩定度。所以,本發明可藉由超音波液體濃度檢測器 來測定容積内之氧化劑的濃度,並且得到一固定濃度。因 此本發明可有效地提高製程上的良率。 顯然地,依照上面實施例中的描述,本發明可能有許 多的修正與差異。因此需要在其附加的權利要求項之範圍477731 V. Description of the invention (9) 'Program controller (PLC) 57〇 and control room — control valve (analog., Control valve 600 may be-class 1 detector 530, in order to facilitate the advanced human superintendent The sonic concentration controller 540 controls the grinding slurry to be measured from Chen. Then, through the pipeline. Lu Lu 550 returns to the mixing tank 500 i. In addition, the ultrasonic concentration detector is based on a current fluid velocity. The measured raw material data of the grinding slurry is converted into a person = can be converted to a memory data table (the conversion method can be weighted by computer or manually by 1% concentration, and the specific concentration data will be passed through the first data transmission line: The converted weight percentage transmission line) 5 6 0 is transmitted to J ^ ata, at this time, the liquid level in the mixing tank 5 0 0 =: controller (pLC) 570 data transmission wheel line (data transmission u, the lean material will also pass through the second asset controller (PLC) 570, and then, the program can be programmed to determine whether the oxidant is sufficient. The oxidant is 3 system (pLC) 570 can Borrow (PLC) 5 7 0 will go through the third data transfer line < 路 ^ 妒 = 呈 式 控The controller 6 〇, and the oxidation through the analog control valve 600, the analog control valve line 610 sends a supplementary amount from the second feed through the above-mentioned steps through the third delivery line 62, until a solid state of an oxidant is obtained. : ^ 上 00 中. And repeat the above steps to maintain this fixed concentration value. / Chen value and continue to advance + In the embodiment of the present invention, a closed-loop concentration control system is provided. Fourth The figure reveals that Ύ + 机械 mechanical grinding slurry ^ The method flow step 477731 of the present invention 5. In the description of the invention (ίο) step, the oxidant concentration data detected by the ultrasonic concentration detector 110 will be transmitted to a programmable controller (PLC) In 120, the programmable controller (PLC) 1 2 0 controls the oxidant control valve 1 3 0, sends the supplementary oxidant into the mixing process 1 4 0, and then repeats the above process. The operating theory of the ultrasonic concentration detector is as follows : Lv is the ultrasonic velocity of the fluid, and the ultrasonic velocity of the fluid is related to the fluid's volumetric modulus (1 i qu id bulk modulus; B) and the density of the fluid (density; D), so , L v = F (B, D). L% is the weight percent concentration of the fluid, and the weight percent concentration of the fluid is related to the ultrasonic velocity of the fluid and the temperature (temperature; T) of the fluid. Therefore, L% two F (Lv, T) Therefore, as long as the current velocity and temperature of the fluid are measured, the concentration can be calculated from the database stored in the memory, as shown in the fifth figure. According to the present invention, the polishing slurry can also be automatically controlled during the on-line operation (on-1 in) of the polishing slurry process. Therefore, the present invention achieves the requirement of continuously monitoring the concentration through closed-loop control to improve the problem that the titration timing cannot immediately compensate for the lack of oxidant. Since the oxidant and the slurry are not decayed in the ultrasonic liquid concentration detector, the stability of the concentration is not affected. Therefore, in the present invention, the concentration of the oxidant in the volume can be measured by the ultrasonic liquid concentration detector, and a fixed concentration can be obtained. Therefore, the present invention can effectively improve the yield in the process. Obviously, according to the description in the above embodiments, the present invention may have many modifications and differences. It is therefore within the scope of the appended claims
第13頁 477731Page 13 477731
五、發明說明(11) 内加以理解,除了上述詳細的描述外,本發明還可以廣泛 地在其他的實施例中施行。 上述僅為本發明之較佳實施例而已,並非用以限定本 發明之申請專利範圍;凡其它未脫離本發明所揭示之精神 下所完成的等效改變或修飾,均應包含在下述申請專利範 圍内。V. Description of the invention It is understood in (11) that, in addition to the above detailed description, the present invention can be widely implemented in other embodiments. The above are merely preferred embodiments of the present invention, and are not intended to limit the scope of patent application for the present invention; all other equivalent changes or modifications made without departing from the spirit disclosed by the present invention should be included in the following application patents Within range.
第14頁 477731 圖式簡單說明 第一圖為過氧化氫(H2〇2)與過錳酸鉀(ΚΜη04)的滴定 方程式之示意圖; 第二圖為說明本發明之一較佳實施例中,化學機械研 磨漿之閉環濃度控制系統的剖面圖; 第三圖為說明本發明之另一較佳實施例中,化學機械 研磨漿之閉環濃度控制系統的剖面圖; 第四圖為說明本發明之一較佳實施例中,化學機械研 磨漿之閉環濃度控制系統的流程圖;與 第五圖為儲存在記憶體中的資料庫之速率對重量百分 比丨辰度圖表。 主要部分之代表符號: 110 超 音 波 濃 度 檢 測 器 〇 120 可 程 式 控 制 器 ( PLC) 130 氧 化 劑 控 制 閥 〇 140 混 合 製 程 〇 210 第 二 圖 之 第 一 進 料 管 路 220 第 —· 圖 之 第 二 進 料 管 路 230 第 ~~~- 圖 之 第 三 進 料 管 路Page 477731 Brief description of the diagram The first diagram is a schematic diagram of the titration equation of hydrogen peroxide (H2O2) and potassium permanganate (KMη04); the second diagram is to illustrate a preferred embodiment of the present invention, the chemical A cross-sectional view of a closed-loop concentration control system of a mechanical polishing slurry; a third view is a cross-sectional view illustrating a closed-loop concentration control system of a chemical mechanical polishing slurry in another preferred embodiment of the present invention; a fourth view is one of the descriptions of the present invention In a preferred embodiment, a flowchart of a closed-loop concentration control system of a chemical mechanical polishing slurry; and the fifth figure are a graph of a rate versus weight percentage of a database stored in a memory. Representative symbols of the main parts: 110 Ultrasonic concentration detector 〇120 Programmable controller (PLC) 130 Oxidation control valve 〇140 Mixing process 〇210 The first feed line of the second picture 220 The second feed of the second picture Feed line 230 # ~~~-The third feed line of the picture
第15頁 477731 圖式簡單說明 240 250 260 270 280 290 300 310 320 330 340 350 360 370 380 390 400 500 510 520 530 540 550 560 第二圖 第二圖 第二圖 第二圖 第二圖 第二圖 第二圖 第二圖 第二圖 第二圖 第二圖 第二圖 弟二圖 第二圖 第二圖 第二圖 第二圖 第三圖 第三圖 第三圖 第三圖 第三圖 第三圖 第三圖 之第 之混 之分 之超 之管 之可 之類 之第 之第 之第 之第 之第 之第 之第 之第 之第 之閉 之分 之第 之第 之超 之管 之第 之第 四進料 合槽。 配槽。 音波濃 路控制 程式控 比控制 一輸送 二輸送 三輸送 四輸送 五輸送 六輸送 一資料 二資料 三資料 環濃度 配槽。 管路 度檢測器。 器。 制器(PLC) 閥。 管路。 管路。 管路。 管路。 管路。 管路。 傳輸線。 傳輸線。 傳輸線。 控制糸統。 一進料管路。 一輸送管路。 音波濃度檢測器 路控制器。 二輸送管路。 一資料傳輸線。Page 15 477731 Brief description of drawings 240 250 260 270 280 290 300 310 320 330 340 350 360 370 380 390 400 500 510 520 530 540 550 560 Second picture Second picture Second picture Second picture Second picture Second picture Second picture Second figure Second figure Second figure Second figure Second figure Second figure Second figure Second figure Second figure Second figure Second figure Third figure Third figure Third figure Third figure Third figure Third figure third Figure 3 of the chart of the first chapter of the first chapter of the first chapter of the first chapter of the first chapter of the first chapter of the first chapter of the first chapter The fourth feeding tank. With slot. Sonic concentration road control Program control Ratio control One conveyance Two conveyance Three conveyance Four conveyance Five conveyance Six conveyance One data Two data Three data Ring concentration Distributing tank. Piping degree detector. Device. Controller (PLC) valve. Pipeline. Pipeline. Pipeline. Pipeline. Pipeline. Pipeline. Transmission line. Transmission line. Transmission line. Control system. A feed line. A delivery pipeline. Sonic concentration detector circuit controller. Two delivery pipelines. A data transmission line.
第16頁 477731 圖式簡單說明 570 第 二 圖 之 可 程 式 控 制 器 ( PLC)。 580 第 三 圖 之 第 二 資 料 傳 輸 線 0 590 第 三 圖 之 第 三 資 料 傳 線 〇 600 第 圖 之 控 制 閥 〇 610 第 三 圖 之 第 二 進 料 管 路 〇 620 第 三 圖 之 第 三 送 管 路 〇 630 第 圖 之 閉 環 濃 度 控 制 系 統。Page 16 477731 Illustration of the diagram 570 Programmable controller (PLC) of the second diagram. 580 The second data transmission line of the third picture 0 590 The third data transmission line of the third picture 0 600 The control valve of the third picture 610 The second feed pipeline of the third picture 0620 The third feed pipeline of the third picture 〇630 Closed-loop concentration control system in the figure.
Ο 第17頁〇 Page 17
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