TW460602B - Method and apparatus for ionized sputtering of materials - Google Patents

Abstract

An ionized physical vapor deposition apparatus (10, 10a, 10b) is provided with an RF element, preferably a helical coil (30), that surrounds space (11) within a vacuum chamber (12) between a target (16) and a substrate holder (14). RF energy, preferably at about 2 MHz or elsewhere in the 0.1 to 60 MHz range, is coupled into the space to form a secondary plasma (29) in a volume (26) of the space between the substrate holder and the main plasma that is adjacent the target. The secondary plasma ionizes sputtered material which is then attracted toward a substrate (15) on the support by a bias on the substrate and/or by an axial magnetic field to impart directionality to the moving ionized sputtered particles to render them perpendicular to the substrate at incidence, so as to coat the bottoms of narrow high aspect ratio features on the substrate. A window (60) of dielectric material such as quartz, either in the wall of the chamber or inside the chamber, or insulation (86) on the coil, protects the coil from adverse interaction with plasma. Shields (100, 200, 300) between the space and the dielectric material prevent sputtered particles coating the dielectric material. The shields are partitioned or slotted to prevent induced currents in the shields. The shields may be biased to control contamination and may be commonly or individually biased to optimize the uniformity of coating on the substrate and the directionality of the flux of ionized material at the substrate. The shield may be formed of a plurality of angled segments (302) that are spaced to facilitate communication of a secondary RF plasma from adjacent the window to the volume of the chamber where the sputtered material is ionized, with the sections angled and spaced to shadow at least most of the target from the window. Alternatively, electrically conductive shield (100) may be provided in close proximity to the window or insulation, preferably spaced therefrom less than the mean free path of gas atoms in the chamber, so that plasma will not form behind the shield. The shield (100) has at least one axial slit (103) therein to prevent azimuthal or circumferential currents from shorting the coupled energy.

Description

4 6ϋ 6 0 a Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs A7 B7 V. Description of the Invention (1) ~ ^ ^ The present invention relates to a low-level coating method, especially a method for carrying out rational vapor deposition of chemical compounds. (IPVD) There are no methods and devices for coating materials on a substrate. Background of the Invention = I-submicron mirror-hole ratio patterns such as through-holes, trenches, and contact holes cause various coating problems during the fabrication of semiconductors. When manufacturing large-scale and ultra-large-scale integrated (VLSI and ULSI) semiconductor devices, the contacts at the bottom of these patterns often need to be coated with smart materials, and these patterns often need to be filled with conductive metal. In many semiconductor device manufacturing processes where thin films need to be deposited, it may be necessary or at least preferred to apply a coating using a physical vapor deposition (PVD) method. When using a physical method to deposit a thin film at the bottom of a narrow, high mirror hole ratio pattern (gap hole), the movement of the material to be deposited on the substrate needs to be highly directional. Patterns with higher mirror holes require higher directivity. When coating a contact on the bottom of a substrate, such as a narrow high mirror hole ratio hole, the coating material particles need to move at an angle that is substantially not larger than the angular opening of the pattern relative to the normal. In the manufacturing process of semiconductor devices, for example, the contacts at the bottom of the high mirror hole ratio gap and the trench, which may be in the range of 0-25 to 0.3 5 micron, need to be metallized, and as the device continues to be miniaturized Trend has become increasingly narrow. It is desirable to metallize the contacts using a physical deposition method, such as a spray coating method, because the PVD method is technically and economically effective in terms of the film purity, flux ', and overall cost and ease of processing equipment obtained. Has the advantage of surpassing alternative methods. For example, 'Chemical Vapor Deposition (CVD) is sometimes used to deposit thin films in ice holes and trenches because of its ability to form thin films on the internal surfaces of gaps or trenches in substrates. However,' 1¾ CVD methods are often Requirement -4- This paper size applies to Chinese National Standard (CNS) A4 specification (210X297 mm) I II (Please read the note on the back before filling out this page),-° • IO. The consumer cooperation of the Central Standards Bureau of the Ministry of Economic Affairs Du printed * 460602 A7 --------- __B7_ V. Description of the invention (2) Ⅰ ~~ 1 " ~ The equipment is more complicated and expensive than PVD. Because of its chemical nature, the CVD method often involves environmental factors and uses a chemical precursor that can provide a source of device pollution. These systems generally require higher-frequency maintenance during non-productive times. For many types of films, the pVD method is faster than the cVD method, produces better throughput, and is therefore less costly. In addition, CVD methods may not exist or may not be practically applicable to many deposition materials, such as requiring complex precursors and delivery systems that may prevent CVD deposition. Titanium, titanium nitride, and tungsten have acceptable CVD manufacturing methods. However, CVD methods for aluminum, copper 'tantalum and tantalum nitride are not non-existent', that is, if they exist, they are not mature or industrially possible. In addition, in a certain method, CVD will cause the device formed on the substrate to be heated for a long period of time, and cause the material located at the material boundary to move and diffuse 'or cause the device to suffer other heat-induced damage or exceed the The thermal limit of the research method 3 Because the size of the pattern is reduced and the mirror aperture ratio is increased, in certain applications, the advantage of applying a coating by physical vapor deposition method has increased the application of the coating during the low shot process. The requirement for high directivity of the material moving to the substrate ^ Unless the path of the sputtered material particles incident on the substrate can be kept highly parallel and perpendicular to the plane of the substrate surface ', attempts to sputter coating with a high mirror hole ratio will result in The high side of the pattern or the sealed portion of the mouth of the pattern causes excessive deposition, and at this time, the physical deposition method cannot obtain satisfactory results. The sputtering coating method is generally performed by placing a target of a substrate and a high-purity coating material in an empty chamber filled with an inert gas such as argon and generating a plasma in the gas. Or intermittently maintain the negative f position, make the dry pole serve as a cathode to provide electrons, and excite the gas in the test. -5- This paper size is applicable to China National Cricket (CNS) A4 specification (210X297 mm)- -— (Please read the precautions on the back before filling out this page) ——Order A7 460602 _______ 87 V. Description of the invention (3) It is generated by the formation of plasma near the target surface. The generation of the electric mass is usually enhanced by using a magnetron cathode assembly, in which a magnet located behind the target traps these electrons on the surface of the target, where the atoms of the process gas are impacted 'from the gas atoms, the electrons are released' And transform it into positive ions. The gas ion is accelerated toward the negatively charged target, where it hits the surface, and the atoms and atomic groups or particles and secondary electrons of the target lining are ejected from the target surface. This secondary electron plays a major role in maintaining the plasma. The sprayed dry electrode material particles are electrically neutral and propagate to the empty space in all directions. Some of them strike the substrate and adhere to them to form a thin film. The narrower pattern on the substrate and the pattern with a ratio of the south mirror hole reduce the acceptable angle of the gap, mask the side of the pattern, increase the incident particles intercepted by the pattern side and the surrounding, and deposit on the bottom of the pattern. Fewer particles. Various processes have been used to move the propagated particles straight and vertically toward the substrate surface. One of the studies includes the use of a physical collimator plate between the target and the substrate so that the incident angle is normally distributed, and the directionality of the incident particles is improved by intercepting low-angle particles with the collimator, only Particles that pass vertically or near a vertical substrate are passed through the collimator. Another study, called long-range sputtering, increases the distance between the target and the substrate, so that only particles that are perpendicular to the substrate or close to a perpendicular angle strike the substrate through the length of the cabin, and the collimator provides particulate pollution The source is because the intercepted particles are deposited on the collimator, accumulate there, and finally peel off. Both the collimation deposition and the long-range process achieve directionality by eliminating the material moving to the substrate at a low angle. The percentage of sputtered material incident on the substrate is greatly reduced, so the deposition rate is substantially reduced, and the frequency of maintenance is also increased, reducing the availability of the target material, and -6- This paper uses the Chinese National Standard (CNS) Α4 Specifications (210x297 meals) (Please read the precautions on the back before filling out this page},-= s Consumer Cooperation Cooperation, Central Standards Bureau, Ministry of Economic Affairs, Du Duan 4606u2 87 丨 〇924〇 Long Patent Application Manuscript Specification Correction Page (December 88) A7 ---------- -R7 _ V. Description of the invention (4) \ 7 ~ ^ W ^ ~-ΐΛ.ν is added to reduce the flux. Another is new The method of thinking about direct gargle material is ionization Shot method, commonly known as ionized rational vapor deposition or IPVD. Use IPVD Temple coating materials using magnetrons; base shot or other conventional base shot or evaporation techniques from the target 'X shot. In the sputtering coating method The 'sputtering particles' are self-emissive PVD at a wide emission angle. The intention is to improve the μ direction by ionizing the particles, which can be electrostatically or electrically manipulated to a direction perpendicular to the substrate. & In IP VD, an extra plasma is generated in the gas in the space between the target and the substrate. The sputtered particles pass through to reach the substrate. In the previous technology, various methods were used. Methods to generate the additional electrical components in the space, such as valley coupling with RF in the remaining room located downstream of the main pole, or by using the% Resonance Accelerator Resonance (ECR) or other microwave plasma generation technology A plasma is formed away from the side space, and then flows into the space. The particles passing through the space impact the electrons or metastable neutrons of the ionized processing gas ^ The impact causes the electrons to escape from the original particles of the sputtered particles, and The particles are given a positive charge. The ions are electrically accelerated toward the substrate by, for example, applying a negative bias voltage to the substrate. Printed by the Consumers' Cooperative of the Central Samples Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling out this page) The IPVD method shows several shortcomings and problems that prevent its use in the actual manufacturing environment. These methods, for example, have low overall efficiency. In particular, the deposition rate of the method is generally low. In addition, the film contamination of this prior art method is high. Especially, the In the prior art IPVD method, when the sputtering power of the target is increased, it will damage the filling of the high mirror ratio pattern. This damage limits the extinction of the aluminum alloy to the use of the 12-inch magnetron target. Less than 3 仟 Watt paper size 帽 74 specifications ⑺D χ 297 4 6 0 6 0 A7 ________B7 V. Description of the invention (5) For 3 仟 W DC power, and this type of rake pole / magnetron is generally used The tube combinations can reach 12 to j 0 仟 W. This low sputtering capability results in a low deposition rate, resulting in low throughput and throughput, and increased pollution, such as 10 to 40 minutes of money per wafer, and a typical wafer time of about 45 seconds to 1 minute ^ In addition It has been found that ¥ is not due to operating the device in the sputtering chamber at a relatively high pressure such as 20 to 40 millitorr, otherwise the degree of ionization of the sputtered material is low. When using argon treatment gas, the pressure is higher than-generally lower than 5 mTorr or within a range of low mTorr, the desired sputtering pressure. Higher pressures tend to lower the quality of deposited film I and increase film fouling. In addition, a higher operating pressure reduction requires a larger flat field uniformity in the design of the 眞 it cabin, which further reduces the ionization efficiency. Other problems generated by the IPVD method of the prior art include plasma sputtering RF electrodes or components unnecessarily, peeling of sputtered material accumulated due to undesired deposition from the RF component, and RF components being deposited on the component by plasma. Material, and other interactions between the plasma and the material and the electrode or element used to couple the RF energy into the hair to ionize the radioactive material. Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economics For this reason, IPVD devices and methods have the need to overcome the shortcomings and problems of previous techniques. In particular, there is a need for an expensive and effective IP VD device with acceptable high overall efficiency, special deposition rate, high ionization efficiency of sputtering material, and low pollution of deposited film. In particular, there is a need for a device for manufacturing a thin film of high uniformity and southern quality, and a device capable of providing industrialized production capacity for the method.

The main purpose of the present invention is to provide a method and device, which are printed on a VLSI paper from cns ΑϋΤ7 ^ · 297 mm 460602 A7 B7-printed by the Ministry of Economic Affairs of the People's Republic of China. (6 and USI semiconductor wafers are deposited on the narrow pinhole ratio hole and the bottom of the trench and a certain degree of side. Another main purpose of the present invention is to provide a method for the rational vapor deposition of ions. The method and device have high overall efficiency. Yuliyi's interview + words Λ, '' ”, and the high ionization efficiency of the coating material, produces high Shanghai fine surplus in a large pressure range. Ϋ 踬Mistake rate. Another object of the present invention is to provide an effective IPVD method; 5 磬 笄, removing and device to keep the deposition film pollution low. Another object of the present invention is to provide a method and hardware with low maintenance requirements. The specific purpose of the present invention is to provide an IPVD device and method that can maintain the purely low-level radio energy at least to a suitable degree without the need to maintain the remaining high level of political pressure under the _ materials Provide high R] Another aspect of the present invention is to provide a method and device: wherein the galvanic ion in the gallbladder and the electrode used to reduce the RF & amount in the galvanic destruction to make the sputtered (ionized material or electrode) The negative interaction between them is kept extremely low, especially the sputtering of the electrode, the stripping of the sputtered material, or a possible short circuit. According to the principles of the present invention, an IPVD device and method are provided, in which the target is tightly corrected A main plasma is formed at the pole to sputter the material from the target, and at the same time, the RF element couples energy to the PVD processing chamber to generate a secondary electrical assembly in the volume between the main electrode and the substrate. The secondary electrode is used to supplement the main plasma which is generally limited to the sputtering target. The secondary electrode is full of space, but it mainly occupies the space between the electrode and the substrate. At least partly, the particles in flight that are removed from the target are electrically accelerated toward the substrate, and the sputtering material is deposited with the assistance of ions at -9- This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 Mm) I-! |-I i \ 1y ^ rf (Please read the precautions on the back before filling in this page) T,-° -1 46 (36 02 A7 B7 V. Description of the invention (7) The substrate = the ion emitting material to be applied to the substrate by Negative daylight is better to fly to the substrate, which can control the mobile ions to have the best f harm to the wafer surface. Or or in addition: the perimeter garden is surrounded by a permanent carcass: a magnet between the substrate and the stem An axial magnetic field is generated in the ship between the poles, and the secondary ionizing ionized base radiation particles are limited to the path parallel to the general axis and on the substrate surface. And the RG ionization energy consumption element can be RF t # to an inductive element Preferably, such as, for example, one or more solenoids around the capsule. As detailed below, the RF element may be located in the cabin, preferably isolated from the process gas of the cabin, or located outside. The Better Consumer Printing Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs also has a protective structure, including non-conductive and non-magnetic dielectric materials, which protects or isolates the RF component so that it does not create a negative relationship with the plasma in the cabin. Interactions, such as interactions with the primary plasma, and interactions with secondary plasmas generated by the RF element. The protective structure allows the sputtered material (if any) colliding with the other to adhere to the structure, so as not to be separated from the structure and become a source of pollution. The components of the protective structure are preferably structured to prevent full current in or in the sputtered material layer deposited thereon and to prevent electrostatic shielding of the RF element. Various RF element structures and protective structures can be used within the limits of the present inventiona. For example, in a specific example, an RF solenoid surrounds the cabin at the rear of the protective structure ', which forms the cabin airtightness around the processing space. The inner wall—Shao Fen, the RF solenoid is covered with an outer conductive cover. Or the stern tube is located in the stern of the processing chamber outside and downstream of the target pole, and the protective structure prevents -10. This paper size applies the Chinese National Standard (CNS) AA specification (2 丨 0X297 mm) Central Standard of the Ministry of Economy Printed by the Bureau's Consumer Cooperatives 460602 A7 B7 V. Invention Description (8) The RF solenoid interacts with the plasma. In another specific example, an RF solenoid is provided, which is covered with a protective insulating material or with a solid insulator that completely covers the solenoid conductor or with a slit having a narrow enough to prevent the formation of a plasma near the conductor. Slit or sector insulator. The RF solenoid and the protection structure are preferably round and surround the processing space. The preferred device further includes a shielding array to shield the protection structure, so that the function of the protection structure is affected by the deposition of the sputtering material on the upper layer. Specific examples of various protective structures and shielding arrays can be used, as described in the following examples. The first specific example is in the first specific example, the RF element includes a large cylindrical quartz window that is used as a protective structure to surround the rear The solenoid of the cabin. The roughly cylindrical quartz window may form part of the airtight interior wall of the cabin, or it may be in the form of an insulator surrounding a solenoid located inside the cabin, or some Other forms of solenoid conductor isolation from the process gas. A substantially cylindrical shield is provided that surrounds the cabin and the small window, which separates the solenoid from the PVD processing chamber. The shield's slits are located at The direction parallel to the axis of the cabin is better. "Near by" means that the distance from the small window is short enough to prevent the plasma from forming between the shield and the small window. The slit screen The shield follows the shape of a small dielectric window that separates the solenoid from the plutonium and the processing gas. The shield prevents coating material from depositing on the small window. When the material is conductive, the solenoid can be short-circuited to prevent RF energy is transmitted to the cabin. The shield slit is better to prevent the shield itself from providing a surrounding channel that may surround the cabin and may induce surrounding current, which will consume energy from the RF solenoid, -11-(please first Read the notes on the reverse side and fill in this page) This paper size uses the Chinese National Standard (CNS) A4 specification U10X297 mm) Central Bureau of Standards of the Ministry of Economics 〖Only for consumer cooperatives 460602 A7 _________B7 V. Description of the invention (9) Reducing the efficiency of the energy cake in the supplementary plasma. The shield can further extend in the axial direction to the short-axis electric field at both ends of the RF solenoid, so as to optimize the efficiency of the energy induction cake in the plasma And reduce the induced M component of the coupling energy. In addition, 'the shield is kept close to the small window to prevent the screen from generating plasma' behind the shield and to be more efficient in the space traversed by the sputtering particles A plasma is generated. The distance between the shield and the small window is not greater than the average free path of the atom of the processing gas or the minimum diffusion length of the plasma in the space. The slit in the shield is wide enough to form a plasma in it. In order to continuously remove the plasma by re-sputtering any coating material deposited on the small window from the source through the slit, the position and structure of the shield relative to the solenoid protective coating Plasma can be efficiently generated in the cabin space, avoiding losses due to the formation of plasma between the shield and the solenoid. As a result, high ionization efficiency of the sputtering material is provided. This specific example is prevented in the cabin Ineffective areas, such as the area between the shield structure and the solenoid insulator or small window, create a heart ring to prevent the loss of ionization efficiency. Second Specific Example f In this specific example, a dielectric window or section insulation is used alone or in combination to protect the RF element from the plasma and the sputtering material at the same time. The screen = the array is preferably in the form of multiple shielded sections' which can be biased to control its plasma-induced sputtering. The shielded array has a plurality of blocks to block the thick shielded section with a small number of mains to prevent the induced over-current consumption energy, which can be 4 months, and the fork can dream about the coupling of the plasma. In addition, the individual Shielded sections are electrically isolated? & II 12- This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page) Dsa 4 4606 02 A7 B7 V. Description of the invention (10) The chirp can be applied individually to optimize the syntactic nature of the coating on the substrate and the directionality of the ionized material that hits the substrate. The gap between the shielded sections is conducive to the expansion of the plasma into the processing space from behind the shield. The third specific event is that in this specific example, the 'tube' surrounds the cabin behind the protective structure. In the configuration, the 忒 solenoid is protected from contact with the plasma formed in the cabin & a shielded array of arrays is provided in the cabin, and it also surrounds the space between the target and the substrate to apply It is better to control the bias voltage from the electricity. The shielding array has a plurality of gaps, which at least partially insulates the shielding section, and prevents the induction eddy current from consuming energy and counteracts the coupling of the energy and the plasma. The shielding section is formed and oriented, and the gap is defined so that the The shielding section shields the protection structure from the target, so that the coupling of energy is minimized by the formation and position of the solenoid and the secondary plasma. 4 The alien shielding array is positioned relative to the remote protection structure, so that it does not accumulate coatings, and supports eddy currents or static shielding of the RF solenoid in it. Since any structure of the protection structure does not see any target, it is good. If the target is visible in any part of the protective structure and the coating of conductive sputtering material is accumulated, the shape of the coating area does not support eddy currents. Or cause obvious solenoid shielding. Printed by the Employees' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs In the third specific example, the protective structure includes a small dielectric window. The shielding array is formed by angular sections, which block all the channels between the stem electrode and the small window as a whole. The section is also at an angle, and the volume of space between the main plasma and the substrate can be seen from the solenoid. In this way, the small window can isolate the trans-emission deposition from the target and provide the most effective energy coupling to form the second ionizing material used to ionize the sputtering material. 13--i ο—, (please first Read the notes on the back and fill in this page again.] The paper size of the table is applicable to the Chinese National Standard (CNS) A4 specification (210X297 public change). Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. 460602 A7 ________B7 V. Description of the invention (11) The shielding section is preferably spaced from the small window. Between the Zhengzheng section and the section, there is a volume that allows some parts of the solenoid to see the compartment to form a secondary plasma. Therefore, it can be next to the small window. Plasma is formed everywhere and extends into the volume where the sputtered material is ionized. According to this third specific example—the illustrative example, the shielding array is composed of multiple located on the inside of the window. The path of the small window is perpendicular to the axially spaced frustoconical section. The shield section can be inclined at the same angle relative to the cabin axis' or the section is inclined at different angles, such as the section farther away from the target and The angle made by this axis is small. It is better to not block adjacent sections at each point on the pole, but the smallest overlap is easy to reduce the impact of the blasting particles. The surrounding area of the shielded section is preferably further divided into sections, so as to Blocks the potential-induced current path. According to another illustrative example of this third specific example, the shielding array is composed of a plurality of flat or slightly curved axially extending rectangular blades surrounding the inner periphery of the window These sections are spaced from the window, the total target area of each target and the radius of the cabin are inclined at an angle that can obscure the window as a whole, or at least the window is substantially within the area of the solenoid, but makes the cabin Part of the solenoid can be seen in the volume to form a secondary electrocathode. In this way, a secondary plasma can be formed immediately adjacent to the window, and it can easily extend into the volume through which the sputtered particles pass. The concealment of this specific example It is better that the sections are inclined at the same angle with the radius of the cabin. Although the minimum overlap can further reduce the coating of the window, it is better that each point of the section from the target does not cover the adjacent section. The shielding Sections with each other in Zhou Yuan It is better that the distance from the target and the substrate is equal to at least the average free path of the gas molecules in the empty capsule. -14-The paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) ( Please read the notes on the back before filling this page) Order 460602 A7 B7 V. Description of the invention (12) {Please read the notes on the back before filling this page) When the second invention material _ coating line, you can keep high The ability to hide, while maintaining a high deposition rate and high ionization rate of the sputtering material. These results can be achieved without causing too much problems, such as shorting the RF screw f or increasing the pollution and damaging the deposited film. As a result, the human projection material is highly oriented in a direction perpendicular to the surface of the substrate, and a high mirror hole ratio pattern can be efficiently filled by sputtering. Eliminates the need for prior art techniques to reduce sputtering capabilities, as short circuiting of dense plasmas or negative effects on RF plasma coupling elements that generate plasmas that ionize sputtering materials are prevented. Prevent short circuit caused by the plasma generated by the RF component itself. The pressure of the sputtering gas can be kept low, or the normal sputtering degree can be prevented, and the directivity due to scattering can be prevented. 3 Avoid the negative influence caused by the sputtering of 111: coupling element. These advantages can be achieved in a processing time equivalent to the conventional sputtering method which does not provide the high-quality, high-hole-ratio pattern coating provided by the present invention. Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. In addition to improving PVD methods, especially the off-coated coating method used to deposit coatings on high-mirror-hole-ratio patterns, the present invention also uses evaporation sources or other evaporation materials. Sources provide advantages in PVD methods that are essentially deposited by physical techniques. Reactive methods and physical methods by or including chemical deposition of materials can also be improved in the present invention. The invention is particularly useful for depositing metal films and also provides advantages in the deposition of other materials, especially oxides and nitrides. These and other objects and advantages of the present invention will be more easily understood from the following detailed description of the preferred embodiments of the present invention. Explanation · Brief description: Figure 1 is a front view of an IPVD sputtering device according to a specific example of the present invention. -15- This paper size applies to the Chinese National Standards (CNS) person 4 ^ grid (2i0x297 mm) A7 V. Description of the invention (13 Magnification of the circle. Circle 2 is a perspective view of the shield of the country 1. Circle 3 It is a diagram of an IPVD sputtering device according to a specific example of the present invention. The circle 4A-4D is a diagram illustrating the alternative solenoid structure of the device of FIG. 3. Schematic diagram of the IP VD sputtering device with the alternative and protective structure of the plasma rf coupling element. Figure 6 is another alternative structure and protection with a secondary plasma RF coupling element as shown in Figs. 3 and 5. Schematic diagram of the PVD sputtering device. Figures 7A-7D are diagrams illustrating the form of the solenoid insulation protective structure shown in the specific example instead of Figure 6. Figure 8 is the present invention-a specific example Diagram of an IPvd sputtering device. Fig. 9 is a diagram illustrating a part of the alternative structure of the shielding array of Fig. 8. Fig. 10 is a sectional view of the specific example of the shielding array of Fig. 9 taken along line 3-3 of Fig. 9. Left part Explanation of symbols _: ί --- IIII ^^^ 1 ^ JJ (Please read the precautions on the back before filling in this )

-_Ministry Central Economic and Trade Bureau staff consumer cooperation, I 10: Sputter coating device 21 Surface 10a: Sputter coating device 22 RF filter 10b: Sputter coating device 23 Plasma 11 Vacuum airtight processing space 24 RF generator 12 Cabin 25 Matching grid 14 Substrate bracket 26 Space 15 Wafer 27 Bias circuit 16 Dry pole 28 Matching grid 17 Cathode assembly 29 Secondary plasma 18 Dry pole bracket-30 Solenoid assembly 19 Magnet structure 32 RF generator 20 Power supply 33 horsepower S16. 16 Paper and paper scales Applicable to Chinese national standard (0 ^) Six 4 specifications (2! 〇 \ 297 mm) Α7 1.Β7 4 win βι island application, please soap Revised Margins (March 88) V. Description of Invention (Gamma) Year s

Li_____ 一一 〆— 39 vacuum pump 200 shielding array 40 processing gas 202 shielding section 41 flow control device 204 gap 50 controller 206 generator 60 window 207 filter matching network 61 metal cover 208 resistor 60a: window 300 shielding array 6 1 a: metal cover 300a: shield array 62 die holes 302 shield section 66 insulation section 302a: shield section 80 magnet 303 top surface 86 shielding insulation layer 304 gap 86a: solid insulator 305 gap 86b: segment insulator 306 Generator 86c: insulator 307, filter matching network 86d: insulator 308, resistor 87, gap 311, axial plane 100: shield 3, 12 axis, 103: slot — ^ n — ^^ 1 I-· τ--^^^ 1 ^^^ 1 n ^ — 1 ^ 11 l ^ i I *.-. I V3r 、-* (Please read the precautions on the back before filling out this page) Employees of the Central Government Procurement Bureau of the Ministry of Economic Affairs, consumer cooperation, Du printed inventions DETAILED DESCRIPTION FIG. 1 illustrates a sputtering coating apparatus 10 according to the principle of the present invention. The device i 〇 includes a vacuum airtight processing space enclosed in the cabin 12. In the cabin 11 1-the end device is provided with a substrate holder or bracket 14 to support the semiconductor wafer 15 placed above it. When the wafer 15 is mounted on the substrate holder 14, it is parallel to the target 16 and faces the target. The target electrode 6 is formed by a thin film coating material deposited on the wafer 15. The processing space 11 is usually a cylindrical space. 'Ultra-high vacuum pressure is maintained during processing, and the processing gas is filled with -16a.-This standard applies the Chinese standard {CNS —) _ A4 specifications (210 X 297 public love) ~ — 'A7 B7 Printed by the Central Consumer Bureau of the Ministry of Economic Affairs, Consumer Cooperatives V. Invention Description (14) Such as nitrogen. The far space 1 1 is located between the inspection room 12 and the living room 12 between the substrate holder 14 and the target 16. The target 16 is a part of the cathode assembly 17 installed in the cabin 2, and its one end is opposite to the substrate support 14. The cathode assembly 7 includes a target holder 18 with a fixed target. The magnet structure 19 is generally located on the opposite side of the target holder 18 from the substrate holder 14. It also shields the dark space 13 around the edge of the dry pole 16. The magnet structure 19 The magnet including a closed magnetic tunnel above the surface of the target 16 is known to those skilled in the art. When it is energized to a negative potential, it uses the cathode assembly 17 to capture the electrons injected into the cabin 2. The magnet structure 19 may include a magnet that is fixed or rotated or otherwise moved by any of several magnetron sputtering assemblies known to those skilled in the art, and may be a permanent or electromagnet. The power supply or power source 20 is usually a direct current The power supply, which can be connected to keep fixed or can be pulsed, is connected between the cathode assembly 17 and the wall of the cabin 12 'the wall is usually grounded as the system anode. The cathode assembly 7 is connected to the wall of the remaining room 12, away from The power supply 20 is preferably connected to the cathode assembly 17 through a rf filter 22. An auxiliary energy source such as an RF generator 24 may also be selectively connected to the cathode assembly via a matching network 25. Also provided The voltage circuit 27 is connected to the substrate holder 14 via the matching network 28. The bias circuit 27 applies a bias voltage to the wafer 15 mounted on the substrate holder μ. At this time, bipolar DC current can be thrown Power source or RF power source> The energy from the stable or pulsed DC power source 20 and / or the RF generator 24 generates a negative potential on the surface 21, causing electrons to be emitted from the surface 21 of the target 16. The emitted electrons are formed by the magnet structure 1 The magnetic field generated by 9 is captured on the surface 2 1 until it hits -17 {Please read the precautions on the back before filling this page) ο. *-The size of the paper is applicable to the Chinese National Standard (CNS) A4 specification (21 〇χ297mm) 4 606 A7 B7 printed by the Consumer Cooperatives of the Central Vehicle Administration Bureau of the Ministry of Economic Affairs 5. Description of the Invention (15) Ionize the processing gas atoms in the immediate vicinity of the surface 21 of the dry pole 16 and place it on the surface of the target 21 极A main plasma 23 is formed near this. The main plasma 23 becomes a source of gas positive ions, which accelerates toward the negatively charged surface 21, where the coating material particles are emitted from the dry electrode 16. Between the electrode surface 2 I and The space between the substrate holders 14 can be regarded as two parts -Qiu Fen is mainly occupied by plasma 23, whose shape is on the base shot surface 21 of target 16 to produce the required erosion pattern, while the second Shao Fen of space ii is between electric There are two reserved spaces 26 between the slurry 23 and the substrate 15 on the substrate holder 14. The particles of the sputtering material from the target 16 are usually derived from electrically neutral particles' which can only pass through the space 1 1 by the impulse, Some _ but not all-penetrated the plasma 23 and the volume 26 and crashed on the substrate 15. In the conventional radiography device, the neutral sputtered particles passing through the plasma 23 were not ionized largely because of the plasma 23 Occupying close to the target surface 21, j, part of the volume, under the operating pressure of the study, there is very little collision 3 between the neutral sputtered particles and the plasma 23 particles. Therefore, in the conventional sputtering method, the The neutral sputtered particles emit too much of the plasma 23, which remains neutral until it is deposited on the substrate 15 to become a thin film. For high-mirror-hole ratio holes and other patterned bottom coating contacts, and for the metallization of the hole by filling with a sputtered conductive material, particles are extremely desired in Vlsi and ULSI semiconductor device manufacturing Strike the substrate surface under a narrow angular distribution of the substrate normal so that it runs directly towards the pattern and reaches the lower part of the pattern without hitting or being obscured by the side of the pattern. S device 1 〇 By sputtering particles Ionization through the volume 26 causes the particles to have a charge, which facilitates the particles to strike the substrate vertically. Once the particles are charged -18- This paper size is applicable to China National Standards (CNS) A4 specifications (21 × 297 mm) (please read the notes on the back first and then fill out this page) 〇 Employees of the Central Standards Bureau of the Ministry of Economic Affairs Co-printed 4 606 A7 -------- V. Description of the Invention (16) ^ " " ~-Electricity, that is, electrostatic or electrical or magnetic acceleration orientation parallel to the axis of the cabin A path perpendicular to the surface of the substrate 15. This process is known in the art as Ionized Rational Deposition (IP VD) or Ion Assisted Sputtering. According to a preferred embodiment of the present invention, the in-flight ionization of the sputtered particles in space 26 is performed by & for an rf element that surrounds volume 2 6 without occupying space 1 I, so that the RF energy is reactive and better. It is inductively coupled within vol%. Although a solenoid structure other than a spiral can be used, the RF component is preferably in the form of a screw official component 30. The possible structure of the solenoid component 30a_30d is illustrated in Figs. 4A-4D = In addition, it can be different from The RF energy is fed into the solenoid in the foregoing manner. For example, a central RF plug is added to the center of the solenoid, and the other two wires are grounded or opposite. The solenoid assembly 30 inductively transfers energy into the processing gas in the volume 26 to form a secondary electrical device 29, which usually fills the volume 26 and is different from the main electrical violet 23. RF generates cry 32 ', which operates in a preferred but not limited to 0.1 or 0_2 Hz to or 80 Hz, and is connected to the solenoid assembly 30 via the matching network 3 3, so that the solenoid assembly 3 0 is supplied with energy, and a secondary plasma 29 is formed in the volume 26. The source of the process gas 40 is connected to the cabin j j via the flow control device 41. In the case of the political firing method, the feed gas 40 is generally an inert gas such as argon. For reactive methods, other gases such as nitrogen and oxygen can be introduced via the auxiliary flow controller. The Nanxuan space system 39 was also connected to cabin i 2 to pump the inspection room 12 to a degree of air in the range of millitorr or sub-mtorr. The pressure in 5 to 50 pen holders is better. Pump 39 maintains a super high vacuum using a process gas flow rate in the range of 5 to 300 standard cubic centimeters (msec). The device also includes the main controller 50 'programmable control based on a microprocessor ___-19- This paper size is applicable to China National Standard (CMS) A4 specification (2 丨 OX 297 mm) (Please read first Note on the back, please fill out this page again} Ό Order Λ. 460602 A7 Printed by the Central Standards Bureau of the Ministry of Economy—Industrial and Consumer Cooperatives V. Invention Description (17) It is better to sequence and control the operation of the aforementioned components. The controller 50 has an RF generator for starting the k φ cathode energy sources 20 and 24, a substrate bias energy source M /, and an RF generator 3, ^ d 4 for moving the plasma generating element solenoid assembly. The output of 1 pump J 9 and other controllable components of device .10. To achieve the directivity of ionized sputtering particles, a bias energy 27 connected to the substrate holder 14 via a matching network 28 can be used to make the substrate Η It is negatively biased relative to one person's table king, and the potential gradient is maintained in the plasma sheath in front of the substrate support · 14, which provides the force to accelerate the positively ionized base shot particles to hit the substrate surface and deposit on the upper layer. Use bipolar DC power or rf power. Magnet 80 can be separately Or instead, surround the cabin 12 'to generate a magnetic field in the axial direction of the cabin 12. The magnet 80 may be an electromagnet or formed by one or more permanent magnets fe. The electric field from the magnet 80 causes the charged particles to vortex along the line. Rotate to increase its radial orientation. When an axial electric field is present, charged particles can move towards the substrate in the axial direction to minimize radial losses. Provide protection between the solenoid assembly 30 and the space 11 The structure prevents the plasma 23 and 29 from contacting with the solenoid assembly and electrically interacting with each other. The structure is a non-conductive material and does not prevent the magnetic field surrounding the solenoid assembly 30 from reaching volume two. One of the protective structures The preferred form is a small window 60 located inside the 12 wall of the cabin, made of a hollow compatible dielectric material such as quartz, and the remaining wall device is used to form a airtight seal. The window 60 may be single insulated or magnetic A transparent material may be formed in its connecting section to form a generally cylindrical protective structure. The solenoid assembly 30 is described in the foregoing specific example, and is wound around the remaining room 12 to be located in the small window 60 Outside is better. Covered with solenoid Item 20- The national paper size (2 丨 centimeter) for this paper size is used. ^ ------ --I.-I. =-I (I—---I-1-·-I Ding [ 1, 卩 (please read the note on the back before filling out this page) 460602 A7, the description of the invention (18) is the horse conductive metal cover 61, which forms the dense solenoid assembly 3 〇 spacer ′ 、 ] Fork hole 62 is separated from 19 rih ^ ^, and also prevents electromagnetic energy from being lightly emitted from the solenoid assembly 30 and from the cabin 12 to the outside of the cabin 12. The mold hole 62 can be connected with the remaining room n from the outside atmosphere Connected or can be filled with atmospheric pressure or lower: start solenoid assembly 3. At this time, the gas of the mold does not support SL: The small window 60 itself is not conductive, but it is easy to accumulate from the coating of conductive material. The conductivity in or on the small window 60 supports the induced current around the cabin, reducing the efficiency of 'eliminating or destroying the energy from the solenoid assembly 30 RF coupling to the secondary plasma 29 in the volume 26. The conductivity of the coating on the small window 60, especially the azimuth (peripheral) direction, which extends in the 12 perimeter and direction of the cabin, and the inductive coupling short circuit can eliminate all or many of the energy inductively coupled into the volume 26. Nominally preventing conductive base material from accumulating on the small window 60, the preferred device additionally includes a shielding array, various specific examples described below. I A specific example Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs -------------- ^ __ rj 1- 彡 (Please read the note on the back before filling out this page) Figure 1 indicates a slot-shaped cylindrical shield 100 between the space 11 and the small window 60, which is close to the inner surface of the small window 60. The shield 100 shields the small window 60 to prevent the pole 16 from being shot, and to block all direct line of sight paths between any point 21 on the surface of the dry pole 16 and the small window 60. According to this specific example, the shield 100 has a longitudinal slit 103 parallel to the axis of the cabin 12. It is also possible to use single or multiple slits to block the surrounding current. The slit 103 of the preferred embodiment substantially interferes with the path surrounding the cabin 12 in the shield 100. Prevent this shield from inducing ambient or azimuth currents. -21-This paper size is applicable to Chinese National Standard (CNS) A4 (210X297 mm printed by the Central Standards Bureau of the Ministry of Economic Affairs and Consumer Cooperatives) 4 6 〇 6.2 2 Α7 ~-~~ ________ B7 V. Description of the invention (19) ^ ^ Shield 100 has an axis range that exceeds the 30 axis range of the solenoid button, and reaches the full effective range of the electric field from the solenoid assembly 30. Second, the conductive shield 100 effectively suppresses the secondary The electric field 7 in the plasma 29 is parallel to the axis, preventing the capacitor assembly from shielding the solenoid assembly 3 with the volume J: and reducing the coupling efficiency of the energy of the solenoid assembly 30 to the body # 2. Shield 100 preferably extends axially beyond the small window 60 and the solenoid assembly 30 from the surface of the target 16 surface 21 plane. Using this structure, the shield can effectively short-circuit the axial electric field in the under-plasma 29 And promote the energy induction of the components in the secondary plasma 29. The preferred embodiment of the present invention is also because the distance between the alienation 100 and the small window 60 is close, and the energy of the solenoid assembly 30 is under high efficiency. Coupling in volume%. Here it is preferably not more than the level of atoms or molecules in the gas. The distance of the free path or the minimum diffusion length of the secondary plasma 29 in the cabin 12. The distance between this close to the shielding and the small window is contrary to other specific examples described below, which are in the + window or solenoid protective non- | Plasma is formed behind any shielding structure provided by the electrical structure adjacent to #. Avoid formation of plasma behind the small window has a percentage increase in the volume of energy passed by the sputtering electrode from the solenoid or other plasma generated electrode , And increase the effective plasma and the ionization efficiency of the sputtered material. In the device 10, the pressure of the processing gas in the range of about 5 to 50 millitorr is used. Argon under this pressure The free paths each have a diameter of no less than 1.0 mm. As a result, the preferred distance between the shield! And the small window 60 is about 1.0 to 15 mm. On the other hand, the width of the slit 103 is more than about 1 5 mm is better. The width of the slit 103 is sufficient to allow the formation of a secondary electrical component 29 in the slit 丨 03 to remove the -22- paper size applicable to China National Standards (CNS) AWm (210 X 297 mm) _______ -____ ^^^^ 1 th ^ — ^^^^ 1 ΛΛ ^^^^ 1 n (Please read first Please note this page before filling in this page) Order 460b A7 B7_ V. Description of the invention (2〇) I ο— (Please read the notes on the back before filling this page) It may be deposited when the spray material passes through the slit 103 Shield 100 sputtering material on the edge adjacent to the slit 103 or the small window 60. Plasma 29 formed in the slit 103 is deposited on the slit by secondary sputtering! 〇3 The material on the middle small window 60 extends adjacent to the slit 103 toward the #small window 60 and continuously moves. Instead of the small window 60, the solenoid assembly 30 can be embedded in the cabin 12 instead. In the insulating section 66 shown in FIG. IA, the insulating section 66 functions like a small window 60 to isolate the solenoid assembly 30 from the slurry and sputtering material in the remaining room 11. The structure of the shield 100 with respect to the insulator 66 is the same as that with respect to the small window 60, as shown in FIG. Many details of this first specific example can be used in the following specific examples, but the description is omitted for pain, so only the differences are stated in the specific examples. Second Specific Example FIG. 3 illustrates a shielding array 200, which is a substitute for the shielding ιOO in FIG. 1, but is located between the space 丨 and the small window 60, which is less close to the inner surface of the small window 60. The shielding array 200 at least partially shields the small window 60 from the material radiated by the dry pole i6, but the gap or gap 204 therebetween is sufficient to couple the energy from the solenoid assembly 30 into the volume 26. The shielding array 200 is preferably a plurality of individual shielding or shielding sections 002. The printed work of the Shenyang Bureau of Standards of the Ministry of Economic Affairs and the Consumer Cooperative Co., Ltd. prints less soil to cover the small window 604 axis, so as not to cause hidden shots. The material coating forms a surrounding conductive path. The structure of the gap 204 substantially blocks the surrounding current path in the shielding array 2000, and extends to fully or partially traverse the drawing direction of the array 2000. The shield 202 should be made of metal or other materials, and the coating of the projection material should be selected to keep the upper layer of the shield section 202 when forming a coating. Otherwise, the deposit will peel off and cause the cabin 12 and the wafer to be processed 15 __ -23- This paper size is applicable to the Chinese National Standard (CNS) A4 specification (2IOX 297 mm) 4 6 Ο υ 2 A7 __________ Β7 5. Description of the invention (21) Pollution. In order to control the accumulation of deposited material on the shield section 202 to reduce the risk of contamination, the shield section 202 may be electrically biased. Section 202 can also be individually biased, and its bias can be individually controlled to optimize the distribution of the thin film deposited on the substrate, such as to optimize the uniformity of the coating on the substrate 15 and the directionality of the ionized material. Into. In this structure, the gap 204 isolates and shields the individual shield sections 202 that are biased. The bias voltage is provided by a generator 206 connected via the beneficial matching network 207, and each shield is individually connected via a current limiting resistor 208. The resistor 208 may be varied or other means may be provided to individually control the bias of the shield section 202 according to the controller 50. Fig. 5 illustrates an alternative specific example 10a of the device 10, in which the solenoid assembly 30 is located in the empty cabin 12, inside the wall of the cabin 12, and outside the space. The protective structure is a window 60a type, which extends inwardly from the inside of the 12th wall of the cabin and encloses the solenoid assembly 30. The cover 6 i A includes a port 62 for shallow air inside the cover, wherein the solenoid assembly 30 is located in the air space of the room 12. The position of the array 200 is the same as that of the previous specific embodiment, so as to shield the small window from the target 16. Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs --- ί--1 ----j---- (--- n T (please read the precautions on the back before filling this page) instead of the small window 60 or At 60a, the alternative specific example of FIG. 6 is a protective structure in the form of an insulating coating 86 to cover the conductor of the solenoid assembly 30. In this specific example, the solenoid assembly 30 is located at the The outer space of the space 11 in the cabin 12 surrounds the volume 26. The shielding array 200 is in the same position as the previous specific example, and the shielding insulating layer 86 is isolated from the target electrode 6. The insulator 86 may be in any of several forms Such as a solid insulator 86a that completely covers the conductor surface of the solenoid assembly 30, as shown in Fig. 7A, or may be in the form of a plurality of discontinuous sections 86b, as shown in the figure. Using Segmented-24- This Paper Size Applicable to China National Standard (CNS) A4 specification (210X297 mm) 46〇i Α7 Β7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (22) Insulator 86b, gap 87 between sections helps the solenoid Module 3, and the narrowness of the gap 87 to maintain no less than the gas content in the cabin 12 The average free path does not cause the plasma to communicate with the solenoid assembly 30, < / is good. Instead of the insulating coating ground on the solenoid assembly 30, it must be sealed + '. Think of any lining can be individually packaged The solenoid assembly 30, such as the insulator 86 {and 86d of Fig. 7 and 7D. This temple figure and several types are used to isolate the solenoid assembly. 30 斑 雷雷 + 甘 一 、 儿 水 ~ with alternative shielding And the protective structure can be used in other specific examples. The third specific example _ FIG. 8 illustrates the shielding array 300 between the space 60 and the small window 60 and adjacent to the inner surface of the small window 60. The shielding array 300 It is better to shield the small window from the material sputtered from the target 16 to block all direct sight paths between any point on the surface of the target 16 and the window 60. In addition, according to the example of the present invention, the shielding array 300 To provide a space or gap 30 in order to substantially block the to-be-coupled plasma μ between the solenoid assembly 30 and the volume% located behind the small window 60.

This area allows the energy from the solenoid assembly 30 and the extended plasma to be coupled into the volume 26. P The shield array 300 is preferably in the form of a plurality of shields or shield sections 30 that completely shield the small window 60 from each point on the target electrode 6. This masking eliminates most of the possibility of a sputter film being accumulated on the substrate 60. Therefore, neither conductive path is generated and static shielding is not easily generated. In a specific example of the present invention, the shielding section 302 has a head-shaped cone shape, and an inner side thereof forms an angle with a plane parallel to the surface 21 of the target 16 and the base plate 15 on the bracket 4. The angle θ of each shield section 302 can be the same, but the efficiency of the shield section 302 can be increased by adding section 302 and target 16 25- (please read the precautions on the back of the page before filling this page)

， 1T .I n ^ i ·-I ^ —ϋ. Employee Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs 袈 Α7 Β7 Ⅰ .-------------------- 5 、 Explanation of invention (23) The distance is reduced by the angle Θ to promote or optimize, so that the top surface 303 of the segment 302 directly faces the target 16 and provides a target 16 and a small window for a specific segment area. 60 0 maximum shielding. The sheltered section 3 02 is located outside of the space U and around the space 11 ', which is axially spaced by the peripheral space or space 305. The maximum width of the gap 3 0 5 is the widest gap S that completely shields the surface of the electrodeless 16 to isolate it from the small window 60, as shown by line 79. Therefore, the band around the small window 60 is not exposed to the target 16 to An angular conductive strip is deposited around the small window 60. Therefore, the maximum width s of the gap 305 may be larger at a larger distance from the target. The gap 305 may be narrower, but it should not be less than the average free path of the processing gas atoms at the cabin temperature and pressure, and it should be optimally spaced to allow the RF plasma to diffuse most efficiently into the volume under processing conditions. 26 in. For the same reason, each segment 302 has a 鬲 degree, and each segment 302 may be the same or changed to optimize the shielding and the spacing of segments 302. The ideal number of shielding segments 302 is based on the cabin Depending on the geometry. Although a single shielded segment 302 'may be used, generally two to six segments 302 should be used. The number of segments 302 should be limited, and the accumulated shielded segment area should be minimized to minimize RF plasma losses. In addition, in order to prevent the RF solenoid assembly 30 from inductively forming a closed peripheral path of eddy current or other current, the section 302 should have at least one gap 304 that blocks each other. The gaps 304 of adjacent sections 302 may be linear, as shown, or preferably staggered to prevent continuous film lines from being deposited axially across the small window 60. The gap 304 should be wide enough to prevent arcing, which, depending on the processing conditions, requires a width of about 1/4 to a British inch. The structure of the gap 3 0 4 substantially blocks the current in the shielding array 3 0 0. 26- This paper uses the Chinese National Standard (CNS) 8 4 specifications (2ιχχ297 mm) --- I- --1 --- I--j I— II _ X 〆1 --5 [Please read the notes on the back before filling this page) A7 --------- B7 V. Description of the invention (24 ), And extend completely or partially across the axis of the array 300. The shielding section 302 may be selected from metals, hollow compatible dielectric materials such as ceramic or quartz, or some other lithography to be selected to retain the upper layer of the sputtering layer when the coating is formed on the shielded section 302. Made of compatible materials for material coating. Otherwise, the deposition peels off to contaminate the disk compartment 12 and the wafer 15 to be processed. In order to control the accumulation of deposited material on the shielding array 300 to reduce the risk of contamination, the shielding section 300 may be biased and made of the metal used in this case. The shielding section 302 is also individually biased to individually control its bias to optimize the distribution of the film to be deposited on the substrate, such as to uniformize the coating on the substrate and the directionality of the ionizing material. optimize. In this structure, the gap 304 completely isolates and insulates the respective shield sections to which a bias voltage is applied. The bias voltage is provided by a generator 306 connected through a filter or matching network 307. Each shield section 3 02 is individually connected 3 through a current limiting resistor 308. The resistor 3 08 can be variable or other can be used for individual control The device 50 controls the biasing means of the shielding section 302. Printed by the Consumer Affairs Cooperative of the China Standards Bureau of the Ministry of Economic Affairs I _ ------ 1 (Please read the notes on the back before filling this page) The advantages of the aforementioned shielding array 300 can be provided by the shielding shown in Figures 9 and 10. Alternative examples of the array 300a are realized. The array 300a is formed by a plurality of flat or slightly curved rectangular sections 302a arranged in an array of paddles or blades around the inner space 11 of the small window 60. The edges of the section 3 02a are axially spaced or slits 304a from each other, which provides space between the sections 302a, so that the plasma is coupled in the volume 26 and blocks the possible circumference around the array 3 0 0a. Park current path. The orientation of the segments 3 02a is such that each of them defines an angle φ that penetrates the axis 312 of the mortal house 12 and forms with the axial plane 311. The gap between the adjacent degraded section 302a and between the obscured section 302a and the small window 60-27- This paper size applies the Chinese National Standard (CNS) Λ4 specification (210X297 mm) 46060 ^ A7 B7 V. Description of the invention (25) W should not be less than the average free path of the grabbing breast so that the plasma can effectively extend from the vicinity of the small window 60 to the volume 26 in the gap 304a between the sections 302a. This section 302a is axially long enough to prevent the small window 60 from forming any coating perimeter at the section 302a. The angle φ and the gap w are set relative to each other to shield all targets on the small window 60. 〖6 is better. Instead of the small window 60, the aforementioned shielding array may use a dielectric window located inside the cabin or a solenoid located inside the cabin to insulate the plasma. It is known to those skilled in the art that the present invention can be modified, and the present invention is described with reference to preferred specific examples. That's why 'additions and improvements can be made, and the details of each specific example can be exchanged with each other without departing from the principles and intentions of the present invention. Note on the back and re-fill this book I) Printed by the Bayer Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economics -28 This paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm)

Claims (1)

The original profit scope of X application in the AMM 2 u application (December 88) 1. A method for the rational vapor deposition of ionized materials, including Buhler: providing a vacuum chamber in which a processing gas is enclosed, the chamber has a source of evaporated coating material, and the remainder is opposite to the source-end A substrate support is provided, the support faces the source to support the substrate; the coating material vapor is generated by the source in the processing space; RF energy is inductively coupled into the cabin using a solenoid, and the solenoid is an electrical material surrounding the cabin. The dielectric material isolates the solenoid from the processing gas in the air space and ionizes the printed material of the buried coating material evaporating from the source with RF energy. The printed materials of the Central Standards Bureau of the Ministry of Economic Affairs and Consumer Cooperatives ionize the printed material. It is isolated from the dielectric material, and is located between .. 忒 艺 间 and the dielectric material, physically shielding the dielectric material from the coating / material particles without isolating the volume from the RF energy There is an electrical shielding lining between them. 2. As in the method of claim 1, it further includes the step of: applying a bias voltage to the shielding to control the substrate generated when a thin film is formed on the shielding array. Pollution. 3. The method of claim 1 in the patent scope further includes the step of: applying a bias voltage to the shield to control the distribution of the thin film to be deposited on the substrate. 4. The method according to item 3 of the scope of patent application, wherein: the step of biasing against privacy includes applying a bias voltage individually and selectively on a plurality of electrically non-continuous sections of the shield to control the substrate to be deposited on the substrate Steps for the distribution of thin films above "5. If the method of the scope of patent application No. 1-, where: the coupling step is performed through a dielectric window located in the vacuum chamber wall ° This paper size applies Chinese National Standard (CNS) A4 Specification (2 丨 0 × 29) 4 · centimeters (please read the notice on the back side and fill in this ear j. Order. 4 6〇 ^ ο ο, the scope of patent application Αδ Β $ C8 D8 6 ' 1 method, of which: (Please read the precautions on the reverse side and fill out this page first> Read Hebu Township uses the dielectric window in the spiral empty wall on the outside of the gift house. 7 · If the scope of patent application The method of item 丨 wherein: The coupling step is performed by using a solenoid located inside the cabin through a dielectric window located inside the cabin. The procedure is to use a solenoid located outside the cabin And the public electrical material coats the solenoid. 19 'The method according to item 1 of the scope of patent application, wherein: the step of ionizing and pre-electrically guiding includes applying a bias voltage on the substrate to apply the coating from the volume of the child. The step of attracting the ionized particles of the coating material to the substrate. 〇—A kind of ionized vapor deposition device, which includes: a vacuum chamber with a processing gas space enclosed in the vacuum sputtering bet, kept at a low level Pressure; a source of vapor deposition material is at the end of the cabin; printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economics-the substrate support is located at the end of the cabin opposite to the source of vapor deposition materials, facing the source of vapor deposition materials to support A substrate on the substrate support is' parallel to the source of the vapor deposition material; · At least one spiral tube surrounds the processing gas space;-an RF energy source is connected to the spiral tube, which excites the spiral tube and inductively couples rf energy to the space; To form a secondary plasma and ionize the sputtered material that is in flight through the volume; a device that directs the ionization of the sputtered material to The vertical dimension of the substrate is compliant with the Chinese National Standard (CNS) A4 standard (2 丨 0; Γ2! ^ Publication) 4 6 0 6 u A8 B8 C8 D8 Printed by the Consumers ’Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 'The direction of the scope of patent application; a non-conductive protective structure' is interposed between the solenoid and the space to isolate the solenoid located in the space from the plasma; and a shield 'surrounds the periphery of the space And the outer side, which is located inside the vacuum chamber, the inner chamber is spaced from the non-conductive retaining structure interposed between the processing gas space and the non-conductive protecting structure, so as to physically shield the non-conductive protecting structure from sputtering Material isolation, at least one axially extending gap of the shield at least partially insulates the shield sufficiently to reduce the surrounding current in the shield. 11. The device in the scope of patent application item 10, wherein: the shield comprises an array of a plurality of discontinuous shield sections, which are separated by a gap so that the sections are electrically separated. 12. For the device in the scope of patent application No. 10, wherein: the non-conductive protective structure includes a dielectric window located in the cabin, and the solenoid is located behind a small window outside the cabin. 13. The device of claim 10 in the scope of patent application, wherein: the solenoid is located outside the cabin; and the non-conductive protective structure includes an inner side of the cabin between the solenoid and the space Dielectric window. 14. The device according to item 10 of the scope of patent application, wherein: the solenoid is located inside the robbed house; and the non-conductive protective structure includes an insulation layer on the solenoid. 15. The device as claimed in claim 14 wherein: the insulation layer completely covers the solenoid. -3 ---- The iron scale of this paper is applicable to the Chinese National Standard (CNS) A4 (2 丨 0X297 mm) ------- (Please read the notes on the back first and fill out this-come. Order A8 Β8 C8 D8 The scope of patent application 16- The device of the scope of patent application No. 14 in which: the far insulation layer includes a plurality of discontinuous insulation sections separated by a gap, and the width of the shoulder gap is not enough to support the electrical penetration of the gap And reach the solenoid. 17. If the device of the scope of patent application No. 10, wherein: the RF energy can excite the solenoid at a frequency between 0.1 million Hz and 60 million Hz. 18. Such as The device of the scope of patent application No. 10 'further includes: a device for applying a bias voltage to the shield. 19' The device of the scope of patent application No. 丨 0, wherein: the far shield includes a plurality of discontinuous shield areas The array of segments is separated by a gap that electrically isolates the segment; and the device further includes a device that applies a bias voltage to the shielded segment of the array. 20. The device according to item 10 of the patent application scope, wherein: Used to orient the sputtered material The device includes a bias energy generator connected to the bracket to apply a bias voltage on the substrate on the bracket and accelerate the ions of the sputtered material in a direction perpendicular to the substrate. 3 21 ' The method, wherein: the dielectric material is a dielectric window in one of the walls between the solenoid and the space; the physical shielding of the dielectric window is configured, and if the shielding is coated with conductive The coating material allows RF energy from the solenoid to pass into the volume. 22 · If the method of claim 21 of the patent scope is applied, of which: The paper size is applicable to the Chinese National Standard (CNS) Α4 specification (2 ] 0X29f mm (please read the note ^^ on the back before filling out this page) ΐτ Printed by the Central Standards Bureau of the Ministry of Economic Affairs, printed by the Consumer Cooperatives of the Ministry of Economic Affairs Printed by the Central Consumers' Bureau of the Ministry of Economics, printed by the Consumer Cooperatives 4606 ^ A8 B8 C8 ---- --- D8 申请, patent application scope The ionization step $ a + orientation step includes applying a bias voltage on the substrate to shield the coating material from impurities $ + ant < ionized particles to electrostatic attraction The steps of the substrate. The method of 21J, in which: the shielding step is performed using a shield that does not provide a surrounding current path around the space. ≫ ^ 24. If the device of the scope of patent application No. 丨 0, where: There is an opposite terminal and a side surrounding the cabin between the terminals. 'The side wall has a dielectric cabin surrounding the cabin. The source of the vapor deposition material is a sputtering target, the center of which is located at one end of the cabin shaft and There is a sputtering surface above it; 菘 The device includes a cathode energy source that can be operated separately from RF energy source to excite the main plasma used to ionize the gas in the cabin to generate gas foot ions and splash from the target. The target surface is sputtered with the target sputtering material 'the cathode energy source, which is connected to the target to excite the target to generate a main plasma in the immediate vicinity of the sputtering surface; the substrate support is parallel to the target; the solenoid' A dielectric window located on the outside of the cabin and opposite the volume of the cabin between the main electrical equipment and the substrate holder; RF energy is connected to the solenoid to excite the solenoid to pass RF through the window Energy inductive coupling A secondary plasma located in the volume to ionize the sputtered material as it passes through the space; and the shield 'out of the space surrounding the volume of the space, separated from each other by at least one located inside the window The oblique screen Γ shields the sections, each section has a surface facing the target electrode, the sputtering surface of the target electrode, and the axis of the target electrode. The paper dimensions are forced to use the Chinese National Standard (CNS) A4 specification (210X29 ^ (Mm)-& ------ ΐτ ------ # (Please read the precautions on the back before filling this page) d606 02 A8 BS C8 D8 at an angle to substantially cover all the windows located on the window The point is to isolate it from the extinguishing surface of the pole. The shield has at least one gap to block the current path around the cabin. The structure of the shield is beneficial to the plasma. Proximity to the window extends into the volume "25. For the device in the scope of application for patent No. 24, wherein: the shield includes a plurality of discontinuous shield sections. 26. For example, the device of the patent application Fanyuan No. 24, further includes: a bias generator connected to the bracket, and applying a bias voltage to a substrate on the bracket to accelerate the sputtering material in the vertical direction of the substrate ion. 27_ The device of claim 24, wherein: the shield includes a plurality of axially spaced frustoconical shield sections. 28. The device as claimed in claim 24, wherein: the shield includes a plurality of spaced apart paddle-shaped shield sections with an axially extending space therebetween. 29. The device as claimed in claim 24, wherein: the solenoid is a spiral coil located around the cabin. 30. The device of claim 24, wherein: a bias voltage is applied to the shielding array. 31. The device according to item 24 of the patent application, wherein: the far shield is formed by a plurality of frustoconical sections, inclined to substantially face the torsion poles, spaced apart from each other and substantially covering all points on the window Each section in the section has at least one axial gap to block the current path around the cabin. The section is separated from the axial space to define a space from the window to the volume, which is beneficial to the two The secondary plasma is again applicable to the Chinese National Standards (CNS) A4 specification (2 丨 0 X 29? Mm) via this space method. (Please read the $ on the back and fill in this page) Printed by Shelley Consumer Cooperative of Central Government Bureau of the Ministry of Economic Affairs 4 60 6 02 H C8 _______ 08. The scope of patent application extends from this window to this volume. 32. If the device of the scope of patent application is No. 24, among which: f Please read the precautions on the back before filling in the clothing page} The shield The shield is extended from multiple directions and surrounded by it. Firewood pieces separated from each other As a result, each glory sheet is inclined to an angle relative to the radial plane passing through the medicine and the central axis of the ship to an angle 'the beams are oriented to be spaced from each other' substantially covering all points on the window to make it Isolate from target 'The paddles are spaced from each other to define a space from the window to the volume that facilitates the secondary plasma to extend into the volume. 33. The device according to item 32 of the scope of patent application, further comprising: a bias generator connected to the bracket to apply a bias voltage to the substrate on the bracket, and accelerate the sputtered material ions in the vertical direction of the substrate . 34. The device according to item 31 of the scope of patent application, further comprising: a bias generator connected to the bracket to apply a bias voltage to the substrate on the bracket, and accelerate the sputtering material in the vertical direction of the substrate ion. 35. The device in the scope of patent application item 10, wherein: the non-conductive material includes a small window interposed between the solenoid and the space to isolate the solenoid from the processing gas located in the space; and economically This shield is a metal shield that surrounds the cabin inside the window and is in close proximity to it. The shield extends axially enough to cover the window to isolate the source of the material and make the plasma Substantially all of the axial electric fields are short-circuited, and the shield has at least one axial slit extending in its axial length to block the conductive path around the cabin in the shield. 36. For example, the installation of item 35 in the scope of patent application, where: At least one solenoid has a center plug, and the RF energy source is connected to the center. The standard of the paper is applicable to China National Standard (CNS) A4 specifications (2 丨 OX A8 B8 C8 D8 4 606 02 Apply for a patent scope plug. 37. For example, please apply for the device in the patent scope item 35, which further includes:-'connecting the bracket, ^ on the substrate on the bracket 38: =, so that the deposition material is separated Accelerate in the vertical direction of the substrate. 38. If the device of the scope of application for patent No. 35, further includes: the magnetic field magnet 'ring burn the capsule' has an axial orientation in the space of 39. Such as the scope of application for patent 35 Item of the device, further comprising: a device that generates a magnetic field for IT, the device is a device in the space of the cabin, and the device of item 3S of the scope of patent application by Xiangrui, wherein: the width of at least one slit in the shield Larger than the original gas in the tank, the average free road control is 1 to form a plasma in the slit. 41. The device according to item 35 of the patent application scope, wherein: the height of the shield is at least the axial length of the solenoid 42 ' Apparatus No. 35 in the scope of Shen Tingqing's patent, among which: the solenoid is a spiral coil surrounding the cabin β 43. Such apparatus in the scope of No. 35 of the patent, in which: The far window is generally cylindrical and small The window is formed of a non-conductive material used to form the inner blade of the urn, and it is in contact with its internal processing .. Hole body connection 44. The device as claimed in item 35 of the patent application, of which: Edge 1¾ It is a non-conductive material form that encloses the solenoid tube with one side less and processing gas ▲. This paper size is applicable to China National Standard (CNS) A4 specification (210 >; 297mm) t 锖 先 ®Read back For the matters needing attention, please fill out this page again} Order the device printed by ABCD 4 6 υ 〇q ^ ---- for the Consumer Cooperatives of the Central Procurement Bureau of the Ministry of Economic Affairs, and apply for the scope of patents 5 Among them: Λ is a shield that surrounds the cabin inside the window and should be next to it. 46. For example, the device in the 45th scope of the patent, in which: the space between the shield and the window is not greater than the Mean free path of gas atoms in space volume in the cabin 47. If the device in the 45th scope of the patent application, it additionally includes: > Bias generating benefits, connected to the bracket 'on the substrate on the bracket M plus bias' to enable continuous emission of material Accelerate in the vertical direction of the substrate. 48 'The device according to item 45 of the patent application scope, further comprising: a magnet surrounding the capsule' having a magnetic field oriented axially in the space of the capsule. 49. If the patent scope is claimed The device of item 45, further comprising: a device for generating a magnetic field, the magnetic field being oriented axially in the space of the capsule. For example, the device in the scope of patent application No. 45, wherein: the width of the slit in the shield is larger than the average free path of gas atoms in the capsule 'to form a plasma in the slit. 5]. The device according to item 45 of the scope of patent application, wherein: the height of the shield is at least the axial length of the solenoid. _ 52. The device according to item 45 of the scope of patent application, wherein: The solenoid is a spiral coil surrounding the cabin. For example, the device under the scope of patent application No. 45, in which: the window is generally a small cylindrical window factory made of non-conductive material used to form a part of the interior wall of the cabin, and the processing gas inside it should be connected first After reading the notes on the back, please fill out this page] 4606u ^ A8 BS C8 D8 applied for patent scope 54. For the device of scope 4S of the patent scope, where:, = is to enclose the solenoid and at least one side is in contact with the processing gas Of non-conductive material. 55. If the method of claiming item 1 of the patent scope is' where: The step of generating coating material vapor includes: using the main energy source to generate electricity in the direct cabin to be destroyed by electricity, and using the other to shoot the target electrode, so that Coating material particles are generated in a space between the target and the substrate to be coated; and the method includes directing the ionized coating material particles from the volume onto the substrate. _ 56. The method of item 55 of the Ruoshenqing patent scope, wherein: the source is a coating material; and the method includes a step of exciting the target and sputtering the coating material therefrom. 57. For example, the method of claim 55 in the patent scope, wherein: the source is a PVD source of the evaporation material; and the method includes a step of evaporating the evaporation material in the ship. (Please read the notes on the back of the book before filling in this page) -Φ --- I-printed on the shoulder of the Central Standards Bureau of the Ministry of Economic Affairs, Consumer Cooperatives-Paper A4 u / s N c / n- T9 2 X • I-i? I-· .- I /