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TW440980B - Package with an innovation substrate having an embedding capacitor to reduce the signal noise - Google Patents

Package with an innovation substrate having an embedding capacitor to reduce the signal noise Download PDF

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Publication number
TW440980B
TW440980B TW89101512A TW89101512A TW440980B TW 440980 B TW440980 B TW 440980B TW 89101512 A TW89101512 A TW 89101512A TW 89101512 A TW89101512 A TW 89101512A TW 440980 B TW440980 B TW 440980B
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TW
Taiwan
Prior art keywords
substrate
capacitor
planted
chip
conductive connection
Prior art date
Application number
TW89101512A
Other languages
Chinese (zh)
Inventor
Chung-Ju Wu
Wei-Feng Lin
Chen-Wen Tsai
Original Assignee
Silicon Integrated Sys Corp
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Publication date
Application filed by Silicon Integrated Sys Corp filed Critical Silicon Integrated Sys Corp
Priority to TW89101512A priority Critical patent/TW440980B/en
Application granted granted Critical
Publication of TW440980B publication Critical patent/TW440980B/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

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  • Semiconductor Integrated Circuits (AREA)

Abstract

The package of the present invention comprises a substrate which has a grounding ring and a power ring formed on the upper surface of the substrate; a chip configured on the substrate; a golden wire used to connect the chip with the substrate; an encapsulation covering over the chip and the substrate for protecting the chip and the conductive wires; a conductor ball grid formed on the lower surface of the substrate for transmitting the signal; and, at least a capacitor to be formed on the substrate for eliminating the coupled noise. The inventive design is to only reserve the pad of de-coupled capacitor for connecting to the power ring and the grounding ring while making layout on the substrate surface.

Description

4 40 9 8 0 五、發明說明(l) 發明領域: ^本發明與一種半導體封裝有關,特別是一種具有電容 器植於基板之封裝用以降低雜訊對電性之影響。 發明背景: 最近’隨著半導體技術之快速演進,電子產品在輕薄 短小推動下,1C半導體的I/O數目不但越來越多密度亦越 來越高,使得封裝元件的引腳數亦隨之越來越多,速度的 要求亦越來越快。通常,半導體晶片需要一結構用以防止 水氣以及外力所造成之損害,此技術則與封裝之技術有 關。 封裝之引腳也越變越多,在製作小、高速度以極高密 度元件的重要考量因素之一為製作具有良好散熱效果之封 裝。—般種傳統之半導體封裝包含一基板以及一晶片,晶 片藉由銀膠或其他材質黏著於基板之上。晶片之電性訊號 則藉由金線傳遞至基板。球矩陣排列封裝技術(b a 1 1 g r i d arr ay ;以下簡稱bga封裝)例如錫球(so 1 der bump )安置於 基板之底侧表面之上。封膠(mol ding compound)覆遮蓋基 板上表面以及晶片防止晶片與金線受到外力撞擊或水氣之 影響。然而由於積集度及訊號傳遞速度不斷的提昇,快速 有效地將熱及訊號傳遞出去變成一重要之議題。而傳統導 線架之封裝在使用上已有其限制。4 40 9 8 0 V. Description of the invention (l) Field of the invention: The present invention relates to a semiconductor package, especially a package having a capacitor planted on a substrate to reduce the influence of noise on electrical properties. Background of the invention: Recently, with the rapid evolution of semiconductor technology, driven by the thinness and lightness of electronic products, the number of I / Os of 1C semiconductors is not only increasing, but also increasing in density, resulting in the number of pins of package components. More and more, the speed requirements are getting faster and faster. Generally, semiconductor wafers need a structure to prevent damage caused by moisture and external forces. This technology is related to packaging technology. There are more and more pins in the package. One of the important considerations in making small, high-speed and extremely high-density components is to make a package with good heat dissipation. —A conventional semiconductor package includes a substrate and a wafer, and the wafer is adhered to the substrate by silver glue or other materials. The electrical signals of the chip are transmitted to the substrate through gold wires. Ball matrix array packaging technology (b a 1 1 g r i d arr ay; hereinafter referred to as bga packaging) such as solder balls (so 1 der bump) is disposed on the bottom surface of the substrate. A molding compound covers the surface of the substrate and the wafer to prevent the wafer and gold wires from being impacted by external forces or the influence of moisture. However, due to the continuous increase in the accumulation level and the speed of signal transmission, the rapid and effective transmission of heat and signals has become an important issue. However, the use of traditional wireframe packaging has its limitations.

第4頁 五、發明說明(2) 目前有多樣之封裝結構被提出,其中一種可以參閱美 國專利號為 U. S, Patent No. 5629835,由 Mahulikar 等所 提出之結構’標題為”METAL BALL GRID ARRAY PACKAGE WITH IMPROVED THERMAL CONDUCTIVITY" ° IC半導體承載的封裝趨向於利用球矩陣排列封裝技術 (ball grid array;以下簡稱BGA封裝)。BGA構裴的特點 是,負責I/O的引腳為球狀較導線架構裝元件之細長引腳 距離紐,其封裝元件之電性的傳輸距離短速度快,可符合 未來速度的需求。可輕易增加引腳的數目同時又有夠大的 聊距使組農更容易,亦可符合未來高腳數的需求。 然而,目前之BGA使用金線連接日日日 方式卻往往因電壓不穩及雜4m 此種封衮 各中 :7夂雜讯干擾而影響電氣特性,因此 件之特性。 雅況干擾之+導體封襞,以提昇元 縱合前述的討論以及為解決上 出一種新的半導體封裝結構用 此本發明將提 偁用以解決上述所陳之問題。 發明目的及概述: 裝 本發明之主要目的為提出一種防止輛合雜訊干擾之封 五、發明說明(3) 本發明之封裝包含一基板’ s亥基板具有一接地環以及 一電源環形成於基板之上表面’一晶片裝置於該基板上, 金線用以連接晶片與基板,封膠覆蓋於晶片與基板之上用 以及一電源環形成於基板之上表面 上,金線用以連 上用以保護晶片 下表面上用以傳 域之外以及位於 本發明之再— 環以及一電源環 板上,金線用以 之上用以保護晶 之下表面上用以 以消除耦合之雜 以保濩晶片以及導電連線’導體球陣列形成於基板之下表 面上用以傳遞訊號及至少一電容形成於製作金線之區域内 以及位於該封膠之内,用以消除耦合之雜訊。 本發明之另一實施例包含一基板,基板具有一接地環 接晶片與基板,封膠 以及導電連線,導體 遞訊號及至少一電容 封膠之内,同以消除 -實施例包含一基板 形成於基板之上表面 連接晶片與基板,封 片以及導電連線,導 傳遞訊號及至少一電 訊。 一晶片裝置於該基板 覆蓋於晶片與基板之 球陣列形成於基板之 形成於製作金線之區 耦合之雜訊。 '該基板具有一接地 ’一晶片裝置於該基 膠覆蓋於晶片與基板 體球陣列形成於基板 容形成於封勝之外.用 圖式簡單說明:5. Description of the invention on page 4 (2) At present, a variety of packaging structures have been proposed. One of them can refer to U.S. Patent No. 5629835. The structure proposed by Mahulikar et al. Is entitled "METAL BALL GRID" ARRAY PACKAGE WITH IMPROVED THERMAL CONDUCTIVITY " ° IC semiconductor packages tend to use ball grid array packaging technology (hereinafter referred to as BGA packaging). The characteristics of BGA structure is that the pins responsible for I / O are spherical. The slender pin distance of the lead-frame components is short, and the electrical transmission distance of the packaged components is short and fast, which can meet the needs of future speeds. It can easily increase the number of pins and has a large enough distance to make the group farmers more Easy, can also meet the needs of high pin count in the future. However, the current BGA uses gold wires to connect day to day, but often due to unstable voltage and 4m such seals: 7 衮 Noise interference affects electrical characteristics The characteristics of this piece. Elegant condition + conductor seal to promote the integration of the previous discussion and use this book to solve a new semiconductor package structure. The invention will be used to solve the problems mentioned above. Purpose and summary of the invention: The main purpose of the invention is to propose a seal to prevent noise interference from vehicles. 5. Description of the invention (3) The package of the invention includes a substrate. The substrate has a grounding ring and a power supply ring formed on the upper surface of the substrate. A wafer device is formed on the substrate. Gold wires are used to connect the wafer and the substrate. The sealant covers the wafer and the substrate and a power ring is formed. On the upper surface of the substrate, a gold wire is used to connect to protect the lower surface of the wafer for transmission beyond the domain and is located on the ring and a power ring board of the present invention, and the gold wire is used to protect it. A conductive ball array is formed on the lower surface of the substrate to eliminate coupling impurities and to protect the chip and conductive connections. The conductive ball array is formed on the lower surface of the substrate to transmit signals and at least one capacitor is formed in the area where the gold wire is made and located in the area. The sealing compound is used to eliminate the coupling noise. Another embodiment of the present invention includes a substrate, the substrate has a ground loop to connect the chip and the substrate, the sealing compound and the conductive connection. The transmission signal and at least one capacitor sealant are also eliminated-the embodiment includes a substrate formed on the upper surface of the substrate to connect the wafer and the substrate, the sealing sheet and the conductive connection, and to conduct the signal and at least one telecommunication. The substrate covers the wafer and the ball array of the substrate is formed on the substrate and formed in the area where the gold wire is made. The substrate has a ground. A wafer device is formed by the base glue covering the wafer and the substrate body ball array. The substrate capacity is formed outside of Fengsheng. It is simply explained with the diagram:

440980 五、發明說明¢4) 圖一 A與圖一 B為本發明之實施例俯視圖。 圖二為本發明之第二實施例之戴面圖。 圖三為本發明之第三實施例之戴面圖。 符號元件對照表: ’ 封裝1 0 基板1 2 晶片1 4 金線1 6 導體球1 8 接地環2 0 電源環2 2 接腳24 電容26 絕緣封裝體2 8 發明詳細說明: 第一實施例: 本發明揭露一種增進電性特性之半導體封裝,本發明 之封裝具有一電容器用以消除耦合之雜訊。本發明之實施 例見於圖一至第圖三。首先,參閱圖一,其為本發明之第 一實施例截面圖,此一封裝1 0包含有一基板1 2,半導體晶 片1 4組裝於基板1 2之上,晶片1 4與基板1 2之間以晶片黏合 物質(例如銀膠)固定。基板1 2中包含許多之導電性通道用440980 V. Description of the invention ¢ 4) Figures A and B are top views of the embodiment of the present invention. FIG. 2 is a wearing view of a second embodiment of the present invention. FIG. 3 is a wearing view of a third embodiment of the present invention. Symbol component comparison table: 'Package 1 0 substrate 1 2 chip 1 4 gold wire 1 6 conductor ball 1 8 ground ring 2 0 power ring 2 2 pin 24 capacitor 26 insulation package 2 8 Detailed description of the invention: First embodiment: The present invention discloses a semiconductor package with improved electrical characteristics. The package of the present invention has a capacitor for eliminating coupling noise. Examples of the present invention are shown in Figs. First, refer to FIG. 1, which is a cross-sectional view of a first embodiment of the present invention. This package 10 includes a substrate 12, a semiconductor wafer 14 is assembled on the substrate 12, and the wafer 14 is between the substrate 14 and the substrate 12. Fix with wafer bonding material (such as silver glue). The substrates 1 and 2 include many conductive channels.

440980 五、發明說明(5) 以傳遞訊號,基板12之材質可以選用p〇lyimide, phenolic resin 、FR4、FR5或βΤ。導電性通道之材質可 以為金、鋼或合金。晶片14與基板丨2之間之電性連結主要 利用複數根導電線,如金線丨6銲著於晶片丨4之上,導體球 1 8做為訊號之傳遞,以一實施例而言可以利用錫球 (solder ball)。導體球陣列利用習知之植球技術將導體 球形成於基板12之下表面上。440980 V. Description of the invention (5) In order to transmit signals, the material of the substrate 12 can be selected from polyimide, phenolic resin, FR4, FR5 or βΤ. The material of the conductive channel can be gold, steel or alloy. The electrical connection between the chip 14 and the substrate 丨 2 mainly uses a plurality of conductive wires, such as a gold wire 丨 6 is soldered on the chip 丨 4, and the conductor ball 18 is used for signal transmission. According to an embodiment, it can be Use a solder ball. The conductive ball array forms conductive balls on the lower surface of the substrate 12 using a conventional ball-planting technique.

圖一A以及圖一B為本發明基板之上視圖,基板12具有 一邮片放置區域14a,一接地環2〇以及電源環22環繞於其 週邊。電源環22供應元件操作所需之電源,接電環如習知 將用以接地。周圍佈有許多導電接腳24,纟晶川、基板 1 2間則以絕緣封裝體2 8加以覆蓋, 杜兀件操作之過程中,可 之分佈配置或材 而降低其品質D 定或信號線之耦 述之問題,至少 連接於電源環2 2 地環2 0間的去耦 特性。為製作上 之地方。本發明 接電源環與接地 源環、訊號線 件之電性,因 應電壓之不穩 為解决上 表面,此電容 電源環22與接 用以提昇元件 基板表面所需 時需預留可連 此四两%避、 料特性所影 例如,_元件 合而受到影 —電容26植 舆接地環2 0 合電容可以 述電容26, 之設計只要 環之去耦合 供應裝響,而 之特性 響。 入於基 之間。 降低耦 需要接 在基板 電容之 置例如電 干擾到元 可以因供 板1 2之上 此形成於 合訊號, 觸墊置於 表面走線 墊即可。Fig. 1A and Fig. 1B are top views of the substrate of the present invention. The substrate 12 has a postal placement area 14a, a ground ring 20 and a power ring 22 surrounding it. The power ring 22 supplies the power required for the operation of the components. There are a lot of conductive pins 24 around it, and Jing Jingchuan and the substrate 12 are covered with insulating packages 28. During the operation of the components, they can be distributed and arranged to reduce their quality. D or signal cables The problem of coupling is at least connected to the decoupling characteristics between the power ring 2 2 and the ground ring 20. For the place of production. According to the electrical properties of the power supply ring, the ground source ring, and the signal wire piece of the present invention, the upper surface is resolved due to the instability of the voltage. The capacitor power ring 22 needs to be reserved when connected to the surface of the component substrate. The characteristics of two percent avoidance and material characteristics, for example, are affected by the combination of _ components-capacitor 26 is connected to the ground ring 2 0. Capacitor 26 can be described as capacitor 26, and the design is only required to decouple the supply and install the ring, and the characteristic ring. Into the base. Decoupling needs to be connected to the capacitors of the substrate, such as electrical interference. It can be formed on the board due to the supply board 12 and the contact pads can be placed on the surface wiring pads.

440980 五、發明說明(6) 、 接地環20之間,且與其電性連接。所述之去搞合電今26在 導電連線(金線)2 6之下,位於製作導電連線之區域内。由、 於幾何結構之限制、或打線線弧層過多之情形下’為考慮 放置電容器於電源環22與接地環20間造成線弧過高’則可^ 以將電源環22與接地環20利用線路佈局或使用多層基板接 至基板之週邊或角落如圖一 B或其他實施例所示。 第二實施例: 圖二顯示本發明第二實施例之截面圖,本結構也包含 一基板12、一晶片14、導電連線(金線)丨6,導電連線16經 由導電結構連接於位於基板底面之球矩陣排列之導體球 18。當然此封裝包含至少一電容26,其電容與電源端及接 地連接乃藉由線路佈局或使用多層基板來達成,使放 置電容之墊,形成於金線形成區域之外’且在封膠體之 第三實施例: 其他變換之實施例 — _ 例子相同,故採用相同之尸、Ί要之元件均與上述 26置放於封膠體之外。私號。此例中主要將去耦合電容 目前’本發明形成封梦 先將電焊至基板之上,再:序,、傳統技術相仿’值將 驟。 再作金線之接合以及封膠等之步· 本發明以較佳實施例說明如上 而熟悉此領域技藝440980 V. Description of the invention (6) The ground ring 20 is electrically connected to it. The above-mentioned electric circuit 26 is located under the conductive connection (gold wire) 26 in the area where the conductive connection is made. Because of the limitation of the geometric structure or too many arc layers of the wire, 'to consider that placing a capacitor between the power ring 22 and the ground ring 20 causes the line arc to be too high', the power ring 22 and the ground ring 20 can be used. The circuit layout or using a multi-layer substrate to connect to the periphery or corner of the substrate is shown in FIG. 1B or other embodiments. Second Embodiment: FIG. 2 shows a cross-sectional view of a second embodiment of the present invention. The structure also includes a substrate 12, a wafer 14, and a conductive connection (gold wire). The conductive connection 16 is connected to the conductive structure via a conductive structure. Conductor balls 18 arranged in a matrix of balls on the bottom surface of the substrate. Of course, this package contains at least one capacitor 26. The connection between the capacitor and the power supply terminal and the ground is achieved by wiring layout or using a multilayer substrate, so that the capacitor placement pad is formed outside the gold wire formation area. Three embodiments: The embodiments of other transformations are the same as the examples, so the same corpse and essential components are placed outside the sealing gel with the above 26. Private number. In this example, the decoupling capacitor is mainly used. At present, the present invention forms a sealed dream. Welding is performed on the substrate first, and then: the sequence is the same as the traditional technology. Steps for joining gold wires and sealing glue. The present invention is described above with reference to the preferred embodiments, and is familiar with the art in this field.

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Claims (1)

4 40 9 8 0 六、申請專利範圍 袈 1,一種具有電容器植於基板之半導體封裝,該半導 包含: 一基板,該基板具有一接地環以及一電源環形成於該基板 之上表面; —晶片,裝置於該基板上; : 導電連線’用以連接該晶片與該基板; ^修’覆蓋於該晶片與該基板之上用以保護該晶片以及該 導電連線; 1,球陣列,形成於該基板之下表面上用以傳遞訊號;及 < —電容,形成於製作該導電連線之區域内以及位於該 '十膠之内,用以消除耦合之雜訊。 2 封如申請專利範圍第1項之具有電容器植於基板之半導體 、裝,其中上述之導電連線為金線。 3 :α申請專利範圍第1項之具有電容器植於基板之半導體 封 t , ’、中上述之電容形成於該接地環與電源環之間。 :°申請專利範圍第1項之具有電容器植於基板之半導體 封 f , ^ ’具中上述基板具有接觸墊用以接合該電容。 私η!申5青專利範圍第1項之具有電容器植於基板之半導體 i'j ,、中上述導體球陣列為錫球。4 40 9 8 0 6. Patent application scope 袈 1, a semiconductor package with a capacitor planted on a substrate, the semiconductor includes: a substrate having a ground ring and a power ring formed on the upper surface of the substrate; A chip is mounted on the substrate; a conductive connection is used to connect the chip and the substrate; a repair is covered on the wafer and the substrate to protect the chip and the conductive connection; a ball array, Formed on the lower surface of the substrate for transmitting signals; and < -capacitors, formed in the region where the conductive connection is made and within the 'ten glue, for eliminating coupling noise. 2 Seal the semiconductor with a capacitor planted on the substrate as described in item 1 of the scope of patent application, where the above-mentioned conductive connection is a gold wire. 3: The semiconductor package t, which has a capacitor planted on the substrate in the first item of the scope of the α patent application, the above-mentioned capacitor is formed between the ground ring and the power supply ring. : ° The semiconductor package f, ^ 'with a capacitor planted on a substrate in the first patent application range has a contact pad for bonding the capacitor. In the first item of the patent application No. 5, the semiconductor i'j having a capacitor planted on a substrate, wherein the above-mentioned conductor ball array is a solder ball. 第11頁 六、申請專利範圍 6. —種具有電容器植於基板之半導體封裝,該半導體封裝 包含: 一基板’該基板具有一接地環以及—電源環形成於該基板 之上表面; 一晶片,裴置於該基板上; 導電連線’用以連接該晶片與該基板; 封勝’覆蓋於該晶片與該基板之上用以保護該晶片以及該 導電連線; 導體球陣,,形成於該基板之下表面上用以傳遞訊號;及 至少一電容,形成於製作該導電連線之區域外以及位於該 封膠之内’用以消除耦合之雜訊。 7 申咕專利範圍第6項之具有電容器植於基板之半導體 封裝其中上述之導電連線為金線。 利範圍第6項之具有電容器植於基板之半導體 '八上述之電容分別與該接地環與電源環連接。 9射m利範圍第6項之具有電容器植於基板之半導體 "'、上述基板具有接觸墊用叫接合該電容。Page 11 VI. Application Patent Scope 6. —A semiconductor package having a capacitor planted on a substrate, the semiconductor package includes: a substrate 'the substrate has a ground ring and a power ring is formed on the upper surface of the substrate; a wafer, Pei is placed on the substrate; a conductive connection is used to connect the chip and the substrate; Feng Sheng is covered on the wafer and the substrate to protect the chip and the conductive connection; a conductive ball array is formed on The lower surface of the substrate is used to transmit signals; and at least one capacitor is formed outside the area where the conductive connection is made and inside the sealant 'to eliminate coupling noise. 7 The semiconductor package with a capacitor planted on a substrate according to item 6 of the Shengu patent scope, wherein the above-mentioned conductive connection is a gold wire. The semiconductor having a capacitor planted on a substrate according to the sixth item of the scope of interest, the eight capacitors are respectively connected to the ground ring and the power ring. A semiconductor having a capacitor planted on a substrate in the sixth item of the 9-millimeter range " ', the above substrate has a contact pad is called bonding the capacitor. 第12頁 六、申請專利範圍 ' 11. 一種具有電容器植於基板之半導體封敦,該體封 裝包含: °Λ 電源環形成於讓基板 一基板,該基板具有一接地環以及 之上表面; 一晶片,裝置於該基板上; , 導電連線,用以連接該晶片與該基板; 封踢’覆蓋於該晶片與該基板之上用以保護該晶片以及哼 導電連線; 導體球障列,形成於該基板之下表面上 至少…,形成於該封膠之外,用以消除;;訊及 1 2 _如申請專利範圍第丨丨項之具有電容器植於基板之半導 體封裳,其中上述之導電連線為金線。 1 3.如申請專利範圍第1 1項之具有電容器植於基板之半導 體封裂’其中上述之電容分別與該接地環與電源環連接。 14.如申請專利範圍第11項之具有電容器植於基板之半導 體封裝’其中上述基板具有接觸墊用以接合該電容。 1 5.如申.請專利範圍第11項之具有電容器植於基板之半導 體封裝,其中上述導體球陣列為錫球。Scope of patent application on page 12 '11. A semiconductor package having a capacitor planted on a substrate, the body package comprising: a power source ring formed on a substrate, the substrate having a ground ring and an upper surface; A chip is mounted on the substrate; a conductive connection is used to connect the chip to the substrate; a sealing kick is covered on the chip and the substrate to protect the chip and the conductive connection; a conductor ball barrier column, Formed on the lower surface of the substrate at least…, formed outside the sealant to eliminate; news and 1 2 _ If a semiconductor package with a capacitor planted on the substrate as described in the patent application item 丨 丨, wherein the above The conductive connection is gold. 1 3. If the semiconductor with a capacitor planted on the substrate is cracked according to item 11 of the scope of the patent application, wherein the above capacitors are respectively connected to the ground ring and the power supply ring. 14. A semiconductor package having a capacitor planted on a substrate according to item 11 of the scope of patent application, wherein said substrate has contact pads for bonding the capacitor. 1 5. If applied, please apply for semiconductor package with capacitor planted on the substrate according to item 11 of the patent, where the above-mentioned array of conductor balls are solder balls. 第13頁Page 13
TW89101512A 2000-01-28 2000-01-28 Package with an innovation substrate having an embedding capacitor to reduce the signal noise TW440980B (en)

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