TW428325B - Method of forming metal oxide semiconductor field effect transistor - Google Patents

Abstract

This invention is about method of forming metal oxide semiconductor field effect transistor, in which the metal oxide semiconductor field effect transistor is formed by a specific procedure so as to effectively control thermal damage during the fabrication process. This invention at least includes the following procedures. At first, a substrate is provided, on which the isolation and well regions are formed. The first dielectric layer, conduction layer and antireflection layer are sequentially formed on the substrate. The photolithography and etching process are used to form a gate. After forming the source, drain and spacer, thermal process is performed onto source and drain such that the first metal silicide is formed on source and drain. The second dielectric layer is used to cover substrate and gate. The surface of the second dielectric layer is planarized such that the antireflection layer of gate is completely stripped and the conduction layer of gate is partly stripped off. After forming the second metal silicide on the conduction layer, the spacer is removed and, the lining pad and doped source/drain are formed. Finally, the third dielectric layer is formed on the second dielectric layer to cover gate. Apparently, the great characteristic of this invention is that the doped source/drain and lining pad are formed after a series of thermal process have been performed. Therefore, the influence of thermal process on doped source/drain and lining pad, such as deposition and so on, can be effectively avoided.