TW419837B - Fabrication method and structure of light emitting diode - Google Patents

Abstract

The invention is to enhance the illuminant effect of light emitting diode. The structure is to grow or form a contact layer and one reverse bias layer on the upper layer of the light emitting diode, and leave the reverse bias layer under the region reserved for the electrodes after microlithography and selective etching process to form the current blocking region (isolation region), then fabricate a transparent conduction layer on the contact layer and reverse bias layer to spread out the driving current so that the light emitting due to carrier recombination can be avoided. Also, the incident light to the region will be reflected by selecting suitable combination of materials for the contact layer and reverse bias layer so that it can be used again or emitted out of the light emitting diode.

Description

41 9 83 7A7 B7 __----------- ------------- '-' " " " 'V. Description of the invention (I) Detailed description of the invention Light-emitting diodes have important uses such as lighting, display, signal transmission, and sensing, and how to improve the light-emitting diode's luminous efficiency has become an important issue for this technology. HP US Patent No. 5,233,204 proposes a structure for improving the brightness of a light emitting diode (see Fig. 1), which includes an n-type electrode (10), an n-type Ga As substrate (12), and a dual heterostructure AlGaInP (14). P-type GaP window layer (Window 137 ^) (16) and 卩 -type electrode (18). By selecting a larger energy gap (^? (Energy gap greater than AIGalnP active layer) as the window 餍 · to enhance the light generated by the element At the same time, because GaP has a low resistivity, it can increase the effect of spreading current. On the other hand, by growing GaP thick enough, light can be easily emitted from the side of the element.

In Toshiba US Patent No. 5,04S, 035, a method for making a current blocking region is also proposed to improve the brightness (as shown in FIG. 2). It forms a current blocking layer between the heterostructure (14) and the window layer (16). (20), so that the electric current is separated to the surroundings only when it is close to the active layer, so as to avoid photons being generated thereunder to improve the luminous efficiency. The Institute of Industrial Technology (OES) US Patent No. 5,481,122 (see Figure 3) its I structure It is a contact layer < small Λ (40) which grows a high concentration carrier on the double heterostructure (14), and the contact layer is plated with a light-transmitting conductive layer (42) (such as ITO), from the structure f ;: Looking at it, the main function of the light-transmitting conductive layer (42) is to spread the & current by using better conductivity to reduce the concentration of the light-emitting area under the metal contact point.

The phenomenon that T d can see through. ^ I V Epistar Republic of China Patent Bulletin No. 344900 mentions four ______ — __y____ U'NS in this paper's dimensions / 丨] Λ4 specification (210 > < 2必 公 #) ~ '~' ~~~ — ^ nt— —JH Round—Order 11 i 111 line * < Read the notes on the back before filling in 3 pages) 4 1 y 83 ί. ¥ A7 B7 History K ί / i Ai in iv. 5. Description of the invention (7) Structures for improving brightness: One (as shown in FIG. 4A) uses an etching method to etch away the central area of the contact layer (53), and uses light transmission to conduct electricity. The layer (60) forms an ohmic contact to the contact layer, and forms a Schottky contact with the window layer in the area without the contact layer, thereby making it difficult for the current to flow through the area to achieve the purpose of dispersing the current. The second (as shown in the figure) (4) An insulating layer is made between the contact layer (59) and the light-transmitting conductive layer (60), so that the current does not easily flow through the area to achieve the purpose of dispersing the current. The effect is the same as the third one (see Figure 4C). ) Then use the ion implantation method> to form a high-impedance region under the region to be prepared as the electrode (62) in the future, making the current difficult In order to achieve the purpose of dispersing current through this area, the purpose is the same. The fourth (as shown in Figure 4D) uses the Zn (zinc) diffusion method to form a P / n under the area to be used as the electrode (62) in the future. The reverse layer (68), but the polarity of the component structure is opposite to that of the previous three figures, and its purpose is the same. However, there are different disadvantages in the above diode structure, as described below: HP Patent: The window layer must be The thicker the current spreading effect, the better the light emission. Therefore, it is often necessary to use secondary growth (such as vapor phase epitaxy VPS). Due to the need to use different epitaxy technologies, the process is more complicated. -------------- ΐτ ------ line < (read the precautions on the back before filling out this page) This paper is moderately sized ® National Standard ((' NS) Λ4¾¾ (21 OX} 5. Description of the invention ο) complex, reduce the yield rate, and increase the cost 'In addition, all photons under the electrode will be absorbed.

Toshiba patent: In order to form this current blocking area, it must be grown at one time. Its process control is not easy, it is easy to reduce the yield, increase the risk and cost. In addition, the photons under the input electrode will be absorbed. OES Patent: Although there is current Dispersion effect, but it is unavoidable that the current flows below the gold electrode, and this part of the current is wasted. In addition, the photons incident under the electrode will be absorbed.

Epi star patent, · If an insulating layer, ion implantation, diffusion method, etc. are used, secondary processing is required, which increases the tedious process of the process and increases the cost. In addition, the photons under the incident electrode are also absorbed. Therefore, the purpose of the present invention In order to overcome the shortcomings of conventional techniques, a light-emitting diode structure with high brightness is proposed. The feature of the present invention is that when the element is epitaxially grown on the contact layer—the layer and the contact layer are of opposite polarity. Due to their opposite electrical properties, a current barrier will be formed when the component is used, so that current will flow from other There is no obstacle flowing in the area. On the one hand, it avoids the current recombination under the electrode, and it can also force the current to be more dispersed. By properly selecting the reverse layer and the contact layer, the refractive index has a large difference. , The light that enters this area will be-part of the stomach & will leave this area after reflection, and it will be huge to shoot the military parts again, thus increasing the luminous efficiency of the element. In this case, it can be #components completed together during the epitaxy ’without the need for secondary growth or processing, and has the dual effect of reducing or increasing the yield. ____ ^ _ This paper is X degrees away; national standard 4,-((, dip) 8-4 specifications (210 乂 2 six public 茇) ~~~ 一 ~ 一 ~-4 1 ^ 837 A7 屮 ί; ίΐ ί_. Α ΐί 卬 Β7 — ... ——-». 1-, ---- 1 V. Description of the Invention (middle) In order to enable the purpose, shape, structure, features and effects of the present invention to be furthered It is understood that the following examples are used in conjunction with the drawings to explain in detail as follows: The first picture is a cross-sectional view of a conventional art light-emitting diode. The second picture is a cross-sectional view of another known art light-emitting diode. The third figure is a cross-sectional view of another conventional light-emitting diode 5 The fourth A-four D are the cross-sectional views of another conventional light-emitting diode ^ The fifth figure is the structure of the light-emitting diode of the present invention— Cross-sectional view of the intermediate process structure of the preferred embodiment. The sixth diagram is a cross-sectional view of the preferred embodiment of the light-emitting diode structure of the present invention. The seventh diagram is another comparative example of the light-emitting diode structure of the present invention. Section 囵 of the intermediate process structure. Figure 8 is a sectional view of another preferred embodiment of the light emitting diode structure of the present invention. Details of the invention The purpose of the present invention is to provide a light-emitting diode structure and a method for producing the light-emitting diode having the effect of improving the luminous intensity. The first method of the method of the present invention includes the following steps: Setting up the electrode: 2. On the η-type electrode An n-type substrate is set up on the substrate; 3. An n-type Bragg reflection layer is set up on the n-type substrate: 4. 'An AlGalnP double heterostructure is set up on the n-type Bragg reflection layer: _This paper size () Λ4 specification (210X2 ^ 7 gonglu) (阅读 Read the notes on the back before filling in the book I) Thread; Γ?-Α7 Β7 ά] 9 83 *? ^ Five 'invention description (f) 5. In Set up on AlGalnP double heterostructure-P-type window layer: 6. Set up a contact layer on the P-type window layer: 7. Set up an n-type reverse layer on the contact layer; 8. Lithography the n-type reverse layer And etching, leaving only the middle part: 9. forming a light-transmitting conductive layer on the obtained structure; and 10. establishing a P-type electrode on the light-transmitting conductive layer. In the above steps, if the polarity of the entire structure is opposite , It is also applicable. Furthermore, in the fourth step, the AlGalnP double heterostructure can also be applied. It is replaced by an AlGalnP multiple quantum parallel structure. Furthermore, the area of the P-type electrode is preferably smaller than the area of the middle portion of the n-type inversion layer, but it may also be equal to or larger than the area of the middle portion of the n-type inversion layer. See the fifth and sixth figures * The structure of the first embodiment of the present invention is as follows: The bottom layer (10) is an n-type electrode, and the n-electrode (10) is an n-type substrate (20) (such as GaAs), an n-type substrate The upper part is an n-type Bragg Reflector (30). For example, for example, GaAs, AlGaAs are alternately stacked with a thickness of one quarter of a specific wavelength to improve the reflectance of light having the specific wavelength. On the Bragg reflection layer (30) is an AiGalnP double heterostructure (40), where the double heterostructure is, for example, η-type (AluGhJ ^ In ^ P (bottom) / undoped (Alo.iGa. ")." "In." (Middle layer) / p-type (AluGaD. Mountain "In <). 5P (top layer). In this AlGaltiP double heterostructure or AlGalnP multiple quantum union structure (40) is a p-type window layer (50), The material can be AlGaAs, GaP, (ALGarJylfty.nPe guest x Yun 1,0.45 Yun yS 0.55) and other semiconductor materials with large energy gaps and good conductivity. The scale of the material is moderate. 1 ¾ U 榡 芈 NS. Λ4 specification ( 2! 0Χ2 ?? Public 犮 I --------------, 玎 ------ hand {诮 first read the note on the back ^ a ^ and then fill out this one ^) B7 five 'Explanation of the invention (h) The carrier concentration of the material is generally greater than 5X1017 / cm3, and the thickness of the contact layer (60) on the p-type window layer (50) is about 0.04 // m or more, and the carrier concentration is Usually larger than 8X1017 / cm3, the material can be GaAs, AlGaAs, GalnP, AllnP or a combination thereof, and n-type AiiC > ai. On the p-type contact layer, 8 (0 ^ < 1) reverse layer (70) , Its thickness is usually greater than 0.01 # m, and its concentration is usually greater than 1X10 17cin_3 The shadowing and etching operation only leaves the n-type reverse layer region (75) in the central portion (as shown in Figure 6). After the n-type reverse layer region (? 5) in the middle region is formed, it is plated thereon. A light-transmitting conductive layer (80) is formed on, for example, ITO or a metal thin film, and finally a p-type electrode (90) is formed. The area of the P-type electrode (90) is smaller than that of the n-type reverse layer, and is separated by The light-transmitting conductive layer (80) is located directly above the n-type reverse layer region (75). The light-transmitting conductive layer (80) will form a good ohmic contact with the contact, and the reverse layer and the light-transmitting conductive layer (80) will form a Schottky contact. In the contact layer (60) ) And the reverse layer (75) area form a reverse pn junction to prevent current from flowing through this area. This entire structure is also applicable if the polarities are all reversed. The second specific example of the manufacturing method of the present invention can also be described with reference to the fifth and sixth drawings. The second specific example of the present invention has the same manufacturing and structure as the first specific example, but the reverse layer (70) and The reverse layer area (75) is different. In the second specific example, the inversion layer (70) on the p-type contact layer may be an η-type (AhGabdylno.nPfO guest X Yun 1, 0.45 Yun 7 奚 0.55) reverse layer (7G), and its thickness It is usually greater than o.oigm, and the concentration is usually greater than 1X10 l7cnT3. After lithography and etching operations, only the n-type anti-paper size of the central part is suitable. "丨 Valve Family Standard (CA'S) Λ4 Specification (2! OxM7) Li} —------------- 1T ------ Travel ·-(诮 Read the precautions on the back before filling this page)

A AT B7 ^ 83 7 Touch V. Description of the invention () Directional zone (75) (as shown in Figure 6). A third specific example of the manufacturing method of the present invention includes the following steps: a. Setting up a single crystal substrate; b. Setting up a GaN or AIN buffer layer on the single crystal substrate: c. Setting up an n-type GaN single crystal layer on the buffer layer d. Setting up an inGaN / AlGaN double heterostructure on the single crystal layer; e. Setting up an n-type AlGaN reverse layer on the InGaN / AlGaN double heterostructure; f. Etching a region of the top layer of the device by lithography and etching To the η-type single crystal layer, and vapor-deposit it to form an η-type electrode; g. Use lithography and etching to remove most of the η-type inversion layer in the other parts of the top layer, leaving only the central portion: A light-transmitting conductive layer is formed on the central region of the inversion layer and its double heterostructure; i. A _?-Type electrode is formed on the light-transmitting conductive layer corresponding to the center region of the η-type inversion layer, and the area of this ρ-type electrode is small. In the center region of the η-type inversion layer "In the above steps, 'if the entire structure has opposite polarities, it is also applicable. In addition, in the fourth and fifth steps, the InGsN / AlGaN double heterostructure can also be -InGaN / AlGaN multiple quantum well structure replaced. Furthermore, the area of the p-type electrode may be equal to or larger than the central area of the n-type inversion layer. Refer to the seventh and eighth figures. The structure of the third embodiment of the present invention is as follows: a. The bottom layer is a substrate (20), which can be SapptUre or other single crystals. This paper ruler is far away.]]] Soap (CNS) Λ4 specification (2! 0X2 must be millimeter {诮 Read the precautions on the back before filling this page)

, 1T line-tv. And >/; f- / · '9 83 ^ w A7 ~ B7 _ ^ J ~ ~',---- «· — * — — ___________ _ I · I · and, description of the invention u), the substrate is made of GaNj ^ GaH ^ AlyGabyN and other materials (o guest X Yun 1, 0 Yun ySl) or a buffer layer (25) composed of a combination thereof, on which is n-type GaN, Ir ^ GahN, AlyGalyN and other materials (0 Yun X guest 1, 0 ^ y guest 1) or a single crystal layer (27) composed of a combination of GaN, In, Gai. IKAlyGa ^ yN and other materials (0 guest xgi, 0 Yun Yike 1) or a double heterostructure or multiple quantum well structure (40) formed by a combination thereof. The electrical property of the top layer of this structure should be 卩 -type. Then, an n-type inversion layer (7S) composed of n-type GaN, IhGahN, AlyGawN (0 xgl, 0 $$) or a combination thereof can be formed, and the inversion can also be appropriately controlled. The composition of the layer material makes its refractive index lower than the refractive index of the top material of the double heterostructure or multiple quantum parallel structure (40) below. Its thickness is usually greater than 0.01 / zm, and the n-type carrier concentration is usually greater than 1X10 I7Cm · 3. After the epitaxy is completed, after lithography and etching, a part of the area is etched to the η-type single crystal layer (27) and evaporated to form an N-type electrode (10) (see Figure 8). After the etching operation, only the n-type reverse layer region (75) in the central region is left. After the n-type reverse layer region (75) in the middle region is formed, a light-transmitting conductive layer (80) is plated thereon. For example, a nickel-gold metal film, and finally a p-type electrode (90) is formed. The surface of the p-type electrode (90) is smaller than the n-type reverse layer region (75), and is located through the light-transmitting conductive layer (80). Directly above the n-type reverse layer region (75), a light-transmitting conductive layer (80) will be formed in the top region of the double heterostructure or multiple quantum well structure (40). A good ohmic contact (Ohmic contact) and the light-transmitting conductive layer (80) will form a Schottkyeoftiact with the n-type inverted layer region (75), and the n-type inverted layer region (75) will Double Heterostructure or Multiple Quantum Parallel Structure Paper Standard Chase State Mining Standard (CNS) Λ4 Specification I 210X2 mm) I --------------, Order --- --- year {Please read the notes on the back before filling this page) A7 B7; λ w1 in part f; in A ί \ 卬 5. The top material of the invention description (4〇) forms a reverse ρ-η connection Pn junction to prevent current from flowing through this area. This entire structure is also applicable if the polarities are all reversed. Because the light-emitting diode of this structure can avoid a part of the electron hole pair that would have been used as a light emitting junction under the electrode to reconcile in this area, so that light can be generated in the unshielded area, and the other pair is incident on this. The light in the reverse layer area will also return due to the phenomenon of total reflection due to the small sealing rate in the reverse layer area, so that the light may be emitted from the element again or an electron hole pair may be generated and circulated again. This design principle can be suitable for light-emitting diodes in various wavelength bands. For example, the light-emitting diode with a wavelength of 62 5nm designed in this structure can increase the brightness by about 15% on average compared with the original components. There are considerable effects in improving component performance and saving energy consumption. All in all, this structure invention has the effect of significantly improving the brightness of the light-emitting diode. Its structure is to grow or form on the top of the light-emitting diode-a P-type contact layer and a η-type reverse bias layer. Or one: η-type contact layer and p-type reverse layer, due to the completion of the epitaxial process one-time, through the lithography and selective etching process, leaving only the reverse layer that will be used as the area under the electrode in the future to form a current barrier area (Blocking area), so it can obviously prevent the current from flowing through this area, and then make a transparent conductive layer on the contact layer and the reverse layer area. Because this transparent conductive layer and the contact layer can effectively form an ohmic contact, so that Current easily flows through this area and the light-transmitting conductive layer and the reverse layer are colored diodes with Schottky contact and reverse bias, so that the current cannot pass through this area. In other words, the design of this reverse layer can effectively make Drive the paper to follow the standard; i 丨 中 围 因 家 # 兵 (CNS) Λ4 size (210X2 collapse mm) I -------------- π ------ hand 1 (Please read the notes on the back before filling in this buttercup) A7 B7 V. Description of the invention (β) The current is diffused to avoid the combination of light emission under the electrode. At the same time, due to the selection of the appropriate contact layer and the refractive index of the reverse layer, the light entering the local area can be reflected and reused and emitted again. The possibility of light-emitting diodes has improved the light-emitting efficiency of the light-emitting diodes, so it has a practical value in the industry. It is a rare invention patent. • It is filed in accordance with the law. Please check and approve the patent in this case to ensure protection. The rights of the inventor, if there is any suspicion of the review committee of the Bureau, please do not hesitate to send a letter to instruct β. The above description * is only specific embodiments of the present invention, but the structure of the present invention is not limited to this. Those skilled in the art in the field of the present invention, all the changes or modifications implemented are covered by the patent scope of this case. (Please read the precautions on the back before going to this page) Order-Line • λ iV · HI f Bamboo

U The size of this paper is suitable for the central and western countries of Sichuan (C'NS> Λ4 size (210X29 also)) ffi

Claims (1)

Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs < yy 3 / & C8 D8 VI. Patent application scope i. A light-emitting diode system method, including the following steps: a. Set up a first conductive electrode (10); b. setting up a first conductive type substrate (20) on the first conductive type electrode; c. setting up a first conductive type Bragg reflection layer (30) on the first conductive type substrate; d. An AlGalnP double heterostructure is set up on the reflective layer (40); e. A second conductive window layer is set up on the AlGalnP double heterostructure (50); f. A second conductive type contact is set on the second conductive window layer Layer (60): g- set up a first conductive type reverse layer (70) on the contact layer; h. Lithography and etch this first conductive type reverse layer, leaving only the middle part (75) : i. forming a light-transmitting conductive layer (g0) on the obtained structure; J. forming a second conductive type electrode (90) on the light-transmitting conductive layer corresponding to a portion of the reverse layer. 2. According to the manufacturing method of the scope of the patent application, the first conductivity type is η type, and the second conductivity type is {5 type. . 3 According to the manufacturing method of the first patent application range, wherein the first conductivity type is P type, and the second conductivity type is η type. 4. The manufacturing method according to item .i of the scope of patent application, wherein the A | GaInP double heterostructure can also be replaced by ~ AlGalnP multiple quantum well structure. 12 This paper size is applicable to China National Standards (CNS) M specifications (210X297 mm) --------— install ί-^ ----- ΐτ ------ 0 (Please read the back first Please pay attention to this page, please fill in this page) 6. Application for patent scope 5 · A kind of light emitting diode system method, including the following steps: a. Set up a single crystal substrate (20): b. Set up a buffer layer on the single crystal substrate ( 25): c. Establishing a first-conductivity single crystal 餍 on the buffer layer (27): d. Establishing an InGaN / AlGaN dual heterostructure on the single crystal layer (40); e. InInGaN / AlGaN dual heterostructure A first conductive type reverse layer (70) is set up on the structure: f. Lithography and etching are used to erode one side area of each of the layers to the first conductive type single crystal layer (27), so that its exposed portion is exposed Area, and a first conductivity type electrode (10) is set up on the exposed area of the first conductivity type single crystal layer (27): 2. Use lithography and etching to etch the rest of the reverse layer (70) Leaving only the central area (75): h. Forming a light-transmissive conductive layer (80) on the double-heterostructure in the center area of the reverse layer and its surroundings: i. Formed at a central region corresponding to the second conductivity type electrode (90). 6. If the method of applying for the scope of patent application No. 5, wherein the first conductivity type is η-type, the second conductivity type is p-type. 7. If the method of applying for the scope of patent application item 5, the first conductivity type is P type, and the second conductivity type is! 1 type. 8 According to the manufacturing method of the scope of application for patent No. 5, wherein the InGaN / AlGaN dual heterostructure can also be an InGaN / AiGaN multiple stool. 13 This paper uses the Chinese National Standard (CNS) A4 specification (2! OX297 mm). --------- Installed (Please read the precautions on the back before filling out this page) iT Printed by the Intellectual Property Bureau Employee Consumer Cooperatives of the Ministry of Economy 4 i M3 7 4 B8 C8 D8 Employee Consumption of Intellectual Property Bureau of the Ministry of Economic Affairs Cooperative printed 6. The patent application scope is replaced by the sub-well structure. 9. A light-emitting diode structure comprising the following structures from bottom to top: a bottom electrode having a first conductivity type: a substrate of a first conductivity type: a Bragg reflective layer of a first conductivity type; an active layer: a window of a second conductivity type Layer · _ The second conductive type contact layer; The first conductive type reverse layer leaves only the central area after lithography and etching operations to form a first conductive type reverse area; a light-transmitting conductive layer covers the reverse layer Orientation area: — The second conductive type electrode, this second conductive type electrode is approximately aligned with the first conductive type reverse layer: wherein the conductive light transmitting layer and the second conductive type contact layer form a good ohmic contact, and the contact layer A reverse p-η junction is formed with the reverse layer area. On the other hand, the reverse layer and the conductive light-transmitting layer will also form a Schottky contact. 10. For example, the light-emitting diode structure of the ninth scope of the patent application, wherein the first conductivity type is η-type, and the second conductivity type is the ρ-type. The first conductive substrate material may be GaAs, AlGaAs, GaP. 12. The light-emitting diode structure according to item 9 of the patent application scope, wherein the active layer can be an AlGalnP double heterostructure or an AiGalnP multiple quantum well designation. 14 The size of this paper is applicable to the Chinese National Standard (CNS) Α4 wash grid (210X297 mm) --------- ^ ^ ----- 1T ------ ^ (Please read the Note: Please fill in this page again.) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 1 9 8 3 ^ C8 D8 VI. Application for patent scope 13. For the light-emitting diode structure of the patent application scope item 9, the second conductive The window layer can be a semiconductor material with high energy gap and good conductivity, such as AlGaAs, GaP, (AhGau + IiiimPCOS x S M.45 S y S 0.55). Its doping concentration is generally greater than 5X1 Oi7 / cm3; the second conductivity type The thickness of the contact layer is about 0.04 / im or more, and the miscellaneous concentration is usually greater than SXiOt7 / cm3. The material can be GaAs, AlGaAs, GalnP, AllnP, or a combination thereof: and the first conductive type reverse layer material is AhGa ^ AsiiKwl), which The thickness is usually greater than 0.01 / im, and the doping concentration is usually greater than 1 × 10 × cm′3. 14. For example, the light-emitting diode structure of item 9 of the scope of the patent application ^ wherein the second conductive window layer may be 厶 103,5,03? '(Into 403 Bushan 111 (1. "? : (0 SXS i, 0.45 S y S 0.55) or a combination thereof, such as semiconductor materials with large energy gaps and good conductivity, whose doping concentration is generally greater than 5X1 017 / cm3 ·, and the thickness of the second conductive contact layer is about 0.04ρηι Above, the doping concentration is usually greater than 8X1017 / cm ', and its material may be GaAs, AIGaAs, GalnP, AllnP or a combination thereof: and the material of the first conductive type reverse layer is (AhGat.OvIiuuPOS x $ Μ · 45 Syg〇.55) , Its thickness is usually greater than 0.01 / m, and the doping concentration is usually greater than 1X10 i7cm. 3. 15. For example, the light-emitting diode structure of item 9 of the scope of patent application, wherein the conductive light-transmitting layer is indium tin oxide. The light-emitting diode structure of the 9th item 'where the first conductivity type is P-type and the second conductivity type is η-type. 17.—A kind of light-emitting diode structure, including the following structure from bottom to top'-a single crystal material Substrate: 15 This paper size applies Chinese National Standard (CNS) Λ4 grid (210X297 mm) --------- I-^ ----- Order ------ line (please read the note $ on the back before filling out this page) Printed by the Intellectual Property Bureau Employee Consumer Cooperatives of the Ministry of Economic Affairs α iy «3 / ·, ll D8 6. Scope of patent application A conductive single crystal layer; an active layer: a first conductive type reverse layer, which leaves only a central area after lithography and etching to form a first conductive type reverse area; a conductive light-transmitting layer, covering This reverse region and the active layer around it;-a second conductive type electrode, which is approximately aligned with the first conductive type reverse layer; wherein the conductive light transmitting layer and the second conductive type contact layer are formed Good ohmic contact, and a reverse pn junction is formed in the contact layer and the reverse layer area. On the other hand, a Schottky contact will also be formed between the reverse layer and the conductive light-transmitting layer, and there is another first conductive electrode (10) Located on the single crystal layer (27) exposed by etching "18. For example, the light emitting diode structure of the 17th scope of the patent application, wherein the first conductivity type is η type, and the second conductivity type is P type. 19. Such as The light-emitting diode structure of the scope of application for item 17, wherein the substrate may be Sapphire or other single crystal, substance ° 20- The light-emitting diode structure of item 17 in the scope of patent application, wherein the buffer layer is made of materials such as OaNJnxGa ^ xN ^ AlyGai.yN (〇gx forget or other 21. The light-emitting diode structure according to item 17 of the scope of patent application, wherein the single crystal layer is the first conductive type GaN, IhGauN, AlyGa, .yN, etc. 1, or OgySI) or a combination thereof Constitute a 2 2. If the light-emitting diode structure of item 17 in the scope of patent application, its --------- ^ ------- order ------ line (please first W Read the notes on the reverse side and fill in this page again) This paper size is applicable to Chinese national standard (CNS> Α4 size (210 × 297 mm) 4 1 9 83 7, B8 C8 ii-- · " --- '', patent application The active layer described in the scope is a double heterostructure composed of GaN, isomaterial (OSygl), or a combination thereof, and the top structure is a second conductivity type. 23. The light-emitting diode structure according to item 17 of the application, wherein the active layer is a multiple quantum composed of GaN, Ii ^ Ga ^ slAlyGauN (0-based X Si, o ^ ysi) or a combination thereof Well structure, and the top structure is the second conductivity type β 24. For example, the light emitting diode structure of item 17 in the scope of the patent application 'where the inversion layer is the first conductivity type GaN, InxGauN, AlyGa ^ yN and other materials ( 〇S xS 1, Ogyg 1), etc. or a combination thereof, the thickness is usually greater than 0.014m, and the n-type carrier concentration is usually greater than iX10〇17cm3 ° 25. For example, the light emitting diode structure of the 17th scope of the patent application 'Where the conductive light-transmitting layer is a nickel-gold film. 26. For example, the light emitting diode structure of item 17 of the scope of application, wherein the first conductivity type is a p-type and the second conductivity type is an n-type. 27. For example, the light-emitting diode method of the scope of patent application, wherein the reverse layer may be a material whose lattice constant matches the contact layer 'and the refractive index is smaller than the material of the contact layer. In the light emitting diode method, the inversion layer may be AiGaAs, AIGalnP, or a combination thereof. 29. For example, the light emitting diode method of the scope of application for patent No. 5, wherein the reverse layer may be a material whose lattice constant matches the underlying structure and the refractive index is smaller than the underlying structure. The size of this paper is in Chinese National Standard (CNS) A4 (2! 〇 × 297 mm) --------- € --------- Order ------ ^ (Please read the precautions on the back before filling out this page.) Consumer cooperation of the Intellectual Property Bureau of the Ministry of Economic Affairs. Print 6. Application scope of patents B8 C8 D8 30. If you apply for the light-emitting diode system law of scope 29 of the patent application, where The inversion layer may be AIGaN, GaN, or a combination thereof. — ^ -------- ^ --------- Order ------. Ii (Please read the notes on the back before filling out this page) Ministry of Economic Affairs «-Property Bureau staff Consumption papers printed by consumer cooperatives are applicable to the Chinese national standard i CNS), M see grid (2i0X297 mm)