A7 B7 五、發明説明（ 發明領域= 本發明係與一種半導體製程之設備有關，特別是有關 於一種應用於化學機械研磨設備之中、設置於化學機械研 磨頭上之浮動環，浮動環並具有供研磨材質流動之通道。 發明背景： 隨著半導體工業的發展，積體電路晶片上元件的積集 度在過去過數十年中急速提昇，目前在單一晶片上已能容 納數百萬個、甚至是數千萬個以上的元件，隨著積集度的 增加，半導體製程的各項技術也需同時提昇，以期在良好 的成本控制下，增加產品的良率。在半導體製程技術之中， 最為重要關鍵技術部分，例如微影、蝕刻、沈積、及熱處 理等，於近年來技術發展上皆有快速而積極的成長，以達 到高積集度的要求。 隨著製程精密度的日益提高，半導體基材上各項材質 的形成及表面平坦度皆需有極佳的控制，以使相配合的微 請 先 閲 % 背 I& 之. 注 意 事 項 再 本 頁 裝 訂 經濟部中央標準局員工消費合作社印掣 來，。磨式物 式程一研方有 方製之受學具 的磨術面化層 確研技表以磨 準械要材成研 而機重基達受 勻學的對，面 均化化用液表 以，坦利溶材 能中平係料基 皆之行要原對 程術進主的以 製技質，性辅 個程材理特時 各製同原姓同 的項不的侵並 等各種磨或 ； 積的各研應能 沈前面械反功 、 目表機學的 刻在材學化質 蝕。基化有材 、 行對 具除 影進是 層移 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（) 理去除特性的機械研磨方式，利用壓力的差異及粒子的運 動同時進行物理性的去除，藉由化學方式移除及物理性的 去除兩種方式的相互搭配及調整，達成表面平坦化處理的 目的，並增進製程的可控制性及效率。 參見第—圖所示’ 一般常見的化學機械研磨設備的設 計’是將晶圓1〇以待研磨面朝下的方式放置於一較大的 研磨塾12上；晶圓10並藉由化學機械研磨頭14加以轉動、 同時提供所需的下壓力；研磨墊12上具有研磨所需的粗糙 表面’並可加入研磨液（slurry)於其上，研磨液可為與被研 磨層具化學反應特性的溶液，亦可於其中加入研磨的顆 粒以促進研磨的效果及速率；在研磨製程進行時，除了 由化學機械研磨頭14帶動晶圓1〇的轉動之外大面積的 研磨墊12亦可沿著另一不同位置的轉轴（通常是研磨墊的 圓〜位置）進行轉動，以提供多個晶圓在不同的化學機械研 磨頭II動下同時進行研磨製程’並產生對於各個晶圓表面 的另一種相對運動。 在理想的狀況之下，化學機械研磨製程應可對被研磨 的表面，進行使其趨向於平坦化的材質去除，並於製程完 成之後於晶圓10上提供完全平坦的表面。然而，由於目前 所製造的晶圓尺寸日益增大，相配合的研磨墊12之面積亦 隨之增加，且由於研磨墊12表面的研磨材係為本身略具彈 性特性的材質，在晶圓10下壓後，很容易在晶圓週圍處因 壓力的不均勻分布而使研磨墊12表面的研磨墊呈現波浪狀 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -I - I -- I- I..... —I 1 - n ! , -II ! - / ... (請先聞讀背面之注意事項再填寫本貫) 五、發明説明（ 的變形 化，而 生高度 度。 因 即於化 二圖中 於晶圓 行晶圓 為平坦 但 製程之 在研磨 度變差 原來在 產生研 機械研 因 機械研 Α7 Β7 ，形成類似於第一圖中所示之研磨墊表面形狀的變 導致在接近晶圓邊緣區域處的表面、在研磨之後產 上的不均勻性，而無法提供良好的研磨特性及平坦 此，在目前的化學機械研磨應用之中， ,. °丨分的部· I 學機械研磨頭的外圍，加入浮動環16的設計 所示，以於研磨時藉由浮動環16的作用二1，如第 10外圍的研磨墊，使研磨墊的彈性變形產壓下位 研磨作用的外圍區域，而提供較佳的研生於不進 的表面。 特丨生及較 是’在使用上述的設計之後，在目前 ...... 11史用的研 雖然表面平坦度的問題得到改善 中 —一 w W 音，但是 〜 完畢的晶圓表面、發現刮痕或微小缺陷、P孑常會 的問題，其原因之一，即是因知A浚么_ 乂及均勻 磨 其原因之一，即是因加入浮動環夏6 研磨過程中研磨液交換及流動的特性 6 又主·] g欠樹 磨後晶圓表面缺陷及受損問題的增加， ’而 & 而开ί 士 磨在應用上新的挑戰。 ^战化學 此，目前需要一種改良的浮動環設計，以g 磨製程良好的研磨平坦度及均勻度。 挺供化學 之後， ----------裝------訂------，線-f (請先閲讀背面之注意事項再填寫本頁j 經濟部中央榡準局員工消費合作社印製 發明目的及概述： 本發明的目的為提供一種應用於化學機械 浮動環。 磨致 備之 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） A7 B7 五、發明説明（) 本發明的目的為提供一種設置於化學機械研磨頭處之 浮動環，以提供研磨時材質流動之通道。 本發明的另一目的為提供一種改良的浮動環設計，以 改善化學機械研磨製程時的研磨平坦度及均勻度。 本發明中化學機械研磨頭之浮動環可包含：承座、襯 環、以及設置於襯環表面的多數個流道；承座用以固定於 化學機械研磨頭之基座端；襯環則位於研磨中晶圓之外 側’用以壓向研磨墊，以提供受研磨晶圓處之一平坦的研 磨塾表面；而流道係設置於襯環與研磨墊相接之表面上， 以於研磨時提供材質流動之通道。以較佳實施例而言，浮 動環可進一步包含設置多個穿過襯環内外圍之流通孔，於 襯環接近研磨墊表面處。 圖式簡單說明： 第一圖 顯示傳統之化學機械研磨設備之構造的的侧視 不意圖。 第二圖 顯示傳統之化學機械研磨設備中加入浮動環設 計之截面示意圖。 第三圖 顯示化學機械研磨設備中加入本發明中之浮動 環設計之載面示意圖。 第四a圖 顯示本發明中襯環表面的正視圖。 第四b圖 顯示本發明中之襯環的側視圖。 第四c圖 顯示第四b圖中襯環22b,局部區域A的截面 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ---I--I---- 裝-- (請先閲讀背面之注意事項再填寫本頁) -訂 經濟部中央標準局員工消費合作社印製 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（） 圖。 第五圖 顯示本發明中流道設計的第一例及第二例的正 視示意圖。 第六圖 顯示本發明中流道設計的第三例及第四例的i 視示意圖。 發明詳細說明： 本發明中揭露提供一種應用於化學機械研磨設備之浮 動環，其表面具有流道的設計，以提供研磨時材質流動之 通道，使研磨製程中的顆粒及研磨產生的碎屑能順利的流 動交換，以消除傳統化學機械研磨製程中產生微小缺陷、 刮痕、及粒子污染的缺點，改善化學機械研磨製程時的研 磨平坦度及均勻度。 參見第三圖化學機械研磨系統的側視圖所示，即為本 發明中應用化學機械研磨頭20之浮動環22，浮動環22基 本上可包含：承座22a、襯環22b、以及第四圖中所顯示之 多數個流道22c。參見第三圖，承座22a係為整個浮動環結 構22的上方部分，用以固定於化學機械研磨頭20處的一 基座端 24，在研磨進行的過程之中，化學機械研磨頭 20 之外的基座端24通常係為固定的、而不會隨著化學機械研 磨頭20的旋轉而轉動。 襯環22b則為整個浮動環結構22的下方部分，其位於 研磨中晶圓2 6之外側，用以壓向研磨墊12 ’以研磨墊12 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X 297公釐） (請先閲讀背面之注意事項再填寫本頁) 裝· 、"τ A7 _B7 五、發明説明（） 受壓變形的位置產生晶圓26受研磨的區域之外，以提供晶 圓26研磨處一平坦之研磨墊表面。 流道22c，如第四a圖中對襯環22b的正視圖所示，係 設置於襯環22b與研磨墊12相接之表面上，流道22c即為 凹入於襯環22b表面内之凹槽，以於研磨時提供材質流動 於襯環22b内外區域之間的通道。 更進一步的，第四b圖中襯環22b的側視圖所示，為 了增加襯環22b内外區域之間材質流動的交換效果，本發 明中之浮動環22並可包含設置多個穿過襯環22b内外區域 間之流通孔22d、其可設置於襯環22b接近研磨墊12的表 面處。第四c圖所示即為第四b圖中襯環22b局部區域A 的側視圖，由圖中可看出流通孔22d係穿過襯環22b的内 外表面，以提供另一材質的通道；同時流通孔22d並可具 有向下延伸至襯環22b與研磨墊12相接表面之外的下伸孔 洞，以提供研磨時研磨墊及研磨屑另一交換流通的管道。 流通孔22d及下伸孔洞的數目可視不同的需求而定之’可 設置數個至數十個不等的孔洞，本例中係形成12個至24 個流通孔22d及相對應的下伸孔洞於櫬環22b上° 經濟部中央標準局員工消費合作社印聚 -----------β------tr (請先聞讀背面之注意事項再填寫本頁) 本例中之浮動環22，其中之承座22a及襯環22b可為 分離的組件，以使會因研磨而消耗的組件’也就是襯環2 2 b 成為可替換的元件，承座22a及襯環22b可視其對财磨性 或化學特性的需要，而以不銹鋼材或陶曼等的材質製造而 成；但承座22a及襯環22c亦可設計成單件成品’本例中 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 經濟部中央標準局貝工消費合作社印製 A7 B7 五、發明説明（） 係以高分子的材質’例如聚苯基硫化物（polyphenylene sulfide; PPS)等的高分子材質加以形成，並將流道22c及其 他所需的孔洞以加工的方式形成於襯環22b的表面上。 流道22c係設置於襯環22b之表面上，但其形狀及分 布可具有多種不同的設計，最簡單的一種設計，即是如第 五圖所示中之流道22c 1 ’各個流道係以由浮動環22由其圓 心向外幅射之幅線方向’散佈於概環22b的表面。 但由圖中亦可觀察出’由於化學機械研磨進行時，在 本例中襯環22b並不隨研磨頭20自轉的狀況下，研磨墊12 會沿其圓心轉動’因此以材質流動的角度而言，直線幅射 狀的流道並非較佳的設計。另一例中即可使每一個流道以 相對於浮動環22之圓心的幅線傾斜一固定角度之分佈方 式，散佈於襯環22b表面，如第五圊中之流道22c2，圖中 流道22c2相對於浮動環22幅線的角度即約為45度。 此外流道亦可使用係為拋物線形之流道，以提供較順 暢的材質流動通道。為了利於加工，同時提供順暢的材質 流動通道’流道設計的第三例可如第六圖中之流道22c3所 示，使每一個流道成為圓弧線形的流道，此例中之圓弧線 形流道’可具有相同的半徑’並以各自具有不同的圓心位 置的方式散佈於襯環22b的表面。 在本發明中流道最佳例的設計可如第六圖中之流道 22c4所示，採用完全配合研磨塾1 2沿其圓心轉動的方式’ 提供具材質流動方向配合性的流道設計’也就是使各個圓 本紙张尺度適用中國國家揉準（CNS ) A4^· € 210X297公楚） ----------4------1Tl~-----·ψ φ (請先閲讀背面之注意事項再填寫本頁) A7 B7 五、發明説明（） 弧線形流道具有以研磨墊1 2旋轉中心為準的相同的圓心位 置，由内而外以各自不同的半徑散佈於襯環22b的表面， 並可視需要採用等間隔或是不等間隔的設計。 在不限制本發明之精神及應用下，以下即以本發明應 用於八吋晶圓研磨時使用的浮動環為例，提供相關的參考 數據，並不限制本發明在不同應用時所產生的尺寸變化， 浮動環直徑大約可為22公分至26公分之間；流道22c之 寬度可為0.3至2公厘之間、其深度可視需要不同而定為1 公厘至數公厘不等；而流通孔2 2 d及下伸孔洞的直徑亦可 為1公厘至數公厘不等；而襯環2 2b的面寬可約為數公厘 至數十公厘之間。 此外，為了提供順暢的材質流動性，在流道於兩端出 口之兩侧、其與襯環2 2b内外圍相接處，可提供具有圓角 或導角的設計，如第六圖中區域B之局部放大圖中的虛線 區域所示，以增進流道的效能。 經濟部中央標準局員工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 因此，藉由本發明中所提出之浮動環的設計，可有效 增進化學機械研磨時研磨粒子及研磨屑的交換、流動、及 排除，以改善化學機械研磨製程時的研磨平坦度及均勻 度。本發明經實際應用的量測結果，亦証明可將原來晶圓 上經研磨後產生的微小刮痕的數目由數百條降低至數十條 以下，具有極佳的應用價值與成果。 本發明以一較佳實施例說明如上，僅用於藉以幫助了 解本發明之實施，非用以限定本發明之精神，而熟悉此領 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） A7 B7 五、發明説明（) 域技藝者於領悟本發明之精神後，在不脫離本發明之精神 範圍内，當可作些許更動潤飾及等同之變化替換，其專利 保護範圍當視後附之申請專利範圍及其等同領域而定。 -----------:冬------.^!-----Λ (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐）A7 B7 V. Description of the invention (Field of the Invention = The present invention relates to a semiconductor process equipment, in particular to a floating ring which is used in chemical mechanical polishing equipment and is arranged on a chemical mechanical polishing head. Channels for grinding material flow. BACKGROUND OF THE INVENTION: With the development of the semiconductor industry, the accumulation of components on integrated circuit wafers has increased rapidly in the past few decades. At present, it can accommodate millions or even on a single wafer. There are more than tens of millions of components. With the increase of the degree of integration, the various technologies of the semiconductor process must also be improved at the same time, in order to increase the yield of the product under good cost control. Among the semiconductor process technologies, the most Important key technologies, such as lithography, etching, deposition, and heat treatment, have experienced rapid and positive growth in recent years in technological development to meet the requirements of high accumulation. With the increasing precision of the process, semiconductors The formation of the various materials on the substrate and the surface flatness need to be well controlled, so that the matching micro please read the% back I & Note. This page is printed on the page of the Central Consumers ’Bureau of the Ministry of Economic Affairs, which is printed by the Consumer Cooperatives of the Ministry of Economic Affairs. The material is to be researched and the machine weight is based on homogenization. The surface is homogenized with a liquid surface. Tanley dissolves the material and can be used in the flat system. It is based on the quality of the process and supplemented by sex. Cheng Caili special in the same system with the original surname of the invasion and mergers and other various grinding or research; product research should be able to sink the mechanical reaction of the front, the surface of the machine engraved in the material science qualitative erosion. The material and the line are removed. The paper size is applied to the Chinese National Standard (CNS) A4 specification (210X297 mm). It is printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs. A7 B7. The mechanical grinding method uses the difference in pressure and the movement of particles to perform physical removal at the same time. The two methods of chemical removal and physical removal are combined and adjusted to achieve the purpose of surface planarization and improve the process. Controllability See Figure-'General Design of Chemical Mechanical Polishing Equipment' shown in Figure-Wafer 10 is placed on a larger grinding pad 12 with the surface to be polished down; The chemical mechanical polishing head 14 is rotated while providing the required downforce; the polishing pad 12 has a rough surface required for polishing, and a slurry can be added thereto. The polishing liquid can be chemically bonded to the layer to be polished. The reaction characteristic solution can also add abrasive particles to promote the effect and rate of polishing; when the polishing process is performed, in addition to the chemical mechanical polishing head 14 to drive the wafer 10 to rotate, a large area polishing pad 12 also It can be rotated along a different axis (usually the circle ~ position of the polishing pad) to provide multiple wafers with different chemical mechanical polishing heads II to perform the polishing process at the same time. Another relative movement of the surface. Under ideal conditions, the chemical mechanical polishing process should be able to remove the material that tends to flatten the surface being polished, and provide a completely flat surface on the wafer 10 after the process is completed. However, due to the increasing size of wafers currently manufactured, the area of the matching polishing pad 12 also increases, and because the polishing material on the surface of the polishing pad 12 is a material with slightly elastic characteristics, After pressing, it is easy to make the polishing pad on the surface of the polishing pad 12 wavy due to the uneven distribution of the pressure around the wafer. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -I-I -I- I ..... --I 1-n!, -II!-/ ... (Please read the precautions on the back before filling in this text) V. Description of the invention ( Because the wafer in the second figure is flat, but the polishing degree of the process is poor, the original machine is being produced. The mechanical pad A7 and B7 are formed, forming a polishing pad similar to the one shown in the first figure. The change in surface shape results in non-uniformity in the surface near the edge of the wafer and after polishing, which cannot provide good polishing characteristics and flatness. In current chemical mechanical polishing applications,. ° 丨Division · I learn the periphery of the mechanical grinding head The design of the floating ring 16 is added, so that during polishing, the floating ring 16 can act on the second one, such as the tenth peripheral polishing pad, so that the elastic deformation of the polishing pad produces the peripheral area of the lower polishing effect, and provides better The graduate student is not on the surface. Special students and more 'After using the above design, at present ... Although the problem of surface flatness has been improved in the 11 historical research-a w W sound However, one of the reasons for ~ the surface of the finished wafer, scratches or small defects, and P 孑 is often due to knowing A Jun _ 乂 and one of the reasons for uniform grinding is due to the addition of floating rings Xia 6 The characteristics of the exchange and flow of the polishing liquid during the polishing process 6] The main problem is the increase in wafer surface defects and damage after under-grinding. Combat chemistry, at present, an improved floating ring design is needed, with good grinding flatness and uniformity in the g grinding process. After being supplied for chemistry, ---------- installation ------ order- ----- ， line-f (Please read the notes on the back before filling out this page j Central Ministry of Economic Affairs 榡The purpose and summary of the invention printed by the Bureau's Consumer Cooperative: The purpose of the present invention is to provide a floating ring for chemical machinery. The paper size of the paper is applicable to China National Standard (CNS) A4 (210X297 mm) A7 B7 V. Description of the invention () The purpose of the present invention is to provide a floating ring provided at a chemical mechanical polishing head to provide a channel for material flow during grinding. Another object of the present invention is to provide an improved floating ring design to improve chemical machinery The flatness and uniformity of grinding during the grinding process. The floating ring of the chemical mechanical grinding head in the present invention may include: a seat, a lining ring, and a plurality of flow channels provided on the surface of the lining ring; the seat is used for fixing to the chemical machinery. The pedestal end of the polishing head; the backing ring is located on the outer side of the wafer during polishing 'to press against the polishing pad to provide a flat surface of the polishing pad at the wafer to be polished; and the runner is provided between the backing ring and the polishing The surfaces of the pads are in contact to provide a channel for material flow during grinding. In a preferred embodiment, the floating ring may further include a plurality of through holes passing through the inner and outer periphery of the backing ring, and the backing ring is close to the surface of the polishing pad. Brief description of the drawings: The first figure is a side view showing the structure of a conventional chemical mechanical polishing equipment. The second figure shows a schematic cross-sectional view of a floating ring design incorporated in a conventional chemical mechanical grinding equipment. The third figure is a schematic diagram showing the loading surface of the floating ring design incorporated in the present invention in the chemical mechanical polishing equipment. Figure 4a shows a front view of the surface of the backing ring in the present invention. Figure 4b shows a side view of the backing ring in the present invention. Figure 4c shows the cross-section of ring 22b in Figure 4b, and the cross-section of local area A. The dimensions of this paper are applicable to China National Standard (CNS) A4 (210X297 mm) --- I--I ---- equipment-- (Please read the precautions on the back before filling out this page)-Order printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs Printed A7 B7 printed by the Employees' Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5. Illustration of the invention (). Fig. 5 is a schematic front view showing the first and second examples of the flow channel design in the present invention. Fig. 6 is a schematic diagram showing the third and fourth examples of the flow channel design in the present invention. Detailed description of the invention: The present invention provides a floating ring applied to chemical mechanical grinding equipment. The surface has a flow channel design to provide a channel for material flow during grinding, so that particles in the grinding process and debris generated by grinding can be used. Smooth flow exchange to eliminate the defects of small defects, scratches, and particle contamination in the traditional chemical mechanical polishing process, and improve the polishing flatness and uniformity during the chemical mechanical polishing process. Referring to the third side view of the chemical mechanical polishing system shown in FIG. 3, which is the floating ring 22 of the chemical mechanical polishing head 20 applied in the present invention, the floating ring 22 may basically include: a seat 22a, a lining ring 22b, and a fourth figure Most of the runners 22c shown in the figure. Referring to the third figure, the socket 22a is the upper part of the entire floating ring structure 22, and is used to fix a base end 24 at the chemical mechanical polishing head 20. During the grinding process, the chemical mechanical polishing head 20 The outer base end 24 is generally fixed and does not rotate with the rotation of the CMP head 20. The backing ring 22b is the lower part of the entire floating ring structure 22, which is located on the outer side of the wafer 26 during polishing, and is used to press against the polishing pad 12 'to the polishing pad 12. This paper size applies the Chinese National Standard (CNS) A4 specification ( 210X 297 mm) (Please read the precautions on the back before filling out this page.) Installation, " τ A7 _B7 V. Description of the invention () Outside of the polished area of wafer 26 due to the position of compression deformation, to provide The wafer 26 has a flat polishing pad surface at the polishing position. The flow passage 22c, as shown in the front view of the backing ring 22b in the fourth figure a, is arranged on the surface where the backing ring 22b is in contact with the polishing pad 12, and the flow passage 22c is recessed in the surface of the backing ring 22b. The grooves provide a channel for the material to flow between the inner and outer regions of the backing ring 22b during grinding. Furthermore, as shown in the side view of the backing ring 22b in the fourth b figure, in order to increase the exchange effect of the material flow between the inner and outer areas of the backing ring 22b, the floating ring 22 in the present invention may include a plurality of through-backing rings. The circulation holes 22d between the inner and outer regions of 22b can be disposed on the surface of the backing ring 22b close to the polishing pad 12. Figure 4c shows a side view of the partial area A of the backing ring 22b in the fourth b. From the figure, it can be seen that the circulation hole 22d passes through the inner and outer surfaces of the backing ring 22b to provide a channel of another material; At the same time, the circulation hole 22d may have a downwardly extending hole that extends downwardly beyond the surface where the backing ring 22b is in contact with the polishing pad 12, so as to provide another channel for exchange and circulation of the polishing pad and the grinding debris during polishing. The number of through-holes 22d and downhole holes can be determined according to different needs. Several to dozens of holes can be set. In this example, 12 to 24 through-holes 22d and corresponding downhole holes are formed.榇 环 22b ° ° Industrial Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs ---------- β ------ tr (Please read the precautions on the back before filling this page) This example In the floating ring 22, the seat 22a and the backing ring 22b may be separate components, so that the components that will be consumed due to grinding are replaced by the backing ring 2 2b, and the seat 22a and the backing ring are replaceable components. 22b can be made of stainless steel or Taoman depending on its need for financial or chemical properties; however, the seat 22a and the lining ring 22c can also be designed as a single finished product. Applicable to Chinese National Standard (CNS) A4 (210X297 mm) Printed by A7 B7, Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention () Made of polymer materials such as polyphenylene sulfide (polyphenylene sulfide; Polymer materials such as PPS), and channel 22c and other required holes Processed in a manner formed on the surface of the backing ring 22b. The flow channel 22c is provided on the surface of the lining ring 22b, but its shape and distribution can have many different designs. The simplest design is the flow channel 22c 1 'shown in the fifth figure. Scattered on the surface of the approximate ring 22b in a direction of a radial line radiated outward from the center of the circle by the floating ring 22. However, it can also be observed from the figure that “because the chemical mechanical polishing is performed, in this case, the backing ring 22b does not rotate with the polishing head 20, the polishing pad 12 will rotate along its center of the circle”, so the angle at which the material flows In other words, a straight radial flow channel is not a better design. In another example, each flow channel can be distributed on the surface of the lining ring 22b in a distributed manner inclined at a fixed angle relative to the center line of the floating ring 22, such as the flow channel 22c2 in the fifth frame, and the flow channel 22c2 in the figure. The angle with respect to the 22 lines of the floating ring is about 45 degrees. In addition, the flow channel can also be a parabolic flow channel to provide a smoother material flow channel. In order to facilitate processing, while providing a smooth material flow channel, the third example of the flow channel design can be shown as the flow channel 22c3 in the sixth figure, so that each flow channel becomes an arc-shaped flow channel, the circle in this example The arc-shaped flow channels 'may have the same radius' and are scattered on the surface of the backing ring 22b in such a manner that they each have a different center position. In the present invention, the design of the best example of the flow channel can be shown as the flow channel 22c4 in the sixth figure, and the grinding wheel 12 is fully matched to rotate along its center. 'Providing a flow channel design with material flow direction compatibility' also It is to make each round paper size applicable to the Chinese national standard (CNS) A4 ^ · € 210X297 Gongchu) ---------- 4 ------ 1Tl ~ ----- · ψ φ (Please read the precautions on the back before filling in this page) A7 B7 V. Description of the invention () The arc-shaped flow channel has the same circle center position based on the rotation center of the polishing pad 12 and has different radii from the inside to the outside Scattered on the surface of the backing ring 22b, and may be designed with an equal interval or an unequal interval as required. Without limiting the spirit and application of the present invention, the following is an example of the floating ring used when the present invention is applied to the polishing of an 8-inch wafer. The relevant reference data is provided, and does not limit the size of the present invention in different applications. The diameter of the floating ring can be approximately 22 cm to 26 cm. The width of the flow channel 22c can be 0.3 to 2 mm. The depth of the flow channel 22c can vary from 1 mm to several mm depending on the needs. The diameters of the flow holes 2 2 d and the downhole holes may also range from 1 mm to several millimeters; and the face width of the backing ring 2 2b may be between several millimeters to several tens of millimeters. In addition, in order to provide smooth material fluidity, on both sides of the outlet of the runner at both ends, where it meets the inner and outer periphery of the lining ring 2 2b, a design with rounded corners or lead angles can be provided, such as the area in the sixth figure Part B is shown enlarged in the dotted area in the figure to improve the efficiency of the flow channel. Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the precautions on the back before filling this page). Therefore, the design of the floating ring proposed in the present invention can effectively improve the abrasive particles and abrasive debris during chemical mechanical polishing. Exchange, flow, and exclude to improve the grinding flatness and uniformity in the chemical mechanical polishing process. The measurement results of the present invention through actual application also prove that the number of micro scratches generated on the original wafer after grinding can be reduced from hundreds to tens or less, and has excellent application value and results. The present invention is described above with a preferred embodiment, and is only used to help understand the implementation of the present invention, not to limit the spirit of the present invention. Familiar with this paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297) (%) A7 B7 V. Description of the invention () After understanding the spirit of the present invention, a domain artist can make minor modifications and equivalent changes without departing from the spirit of the present invention. The scope of the attached patent application and its equivalent fields depend. -----------: Winter ------. ^! ----- Λ (Please read the precautions on the back before filling out this page) Printed by the Staff Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs The paper size of the paper is applicable to China National Standard (CNS) Α4 (210X297 mm)