TW385552B - Semiconductor position detection apparatus - Google Patents

Abstract

The width of a plurality of resistance ranges constituting the basic conductive layer becomes wider and wider from one end to the other, and their resistivities are substantially the same, so, when the semi-conductor position detection is so disposed that the electric charge generating in accordance with the injecting light from the measured object at a long distance, the resistivity in the narrow resistance area is high even when the injecting light on the light receiving surface can only move slightly due to the change in the distance of the measured object, the output current from both ends of the basic conductive layer fluctuates greatly and the position detection accuracy is enhanced.

Description

A7 B7 V. Description of the invention ([) [Technical Field 丨 The present invention relates to a semiconductor detection device (PSD).

I

[Technology # 景] The semiconductor distance detection device (hereinafter referred to as PSD) is a device for measuring the distance of the object to be measured using the principle of so-called triangulation measurement, etc., and is well known. PSD is in the form of an active distance measuring device and is mounted on a camera such as a camera. In this camera, the focus of the camera lens is adjusted based on the distance of the object to be measured measured by the PSD. . [Revelation of the invention] In the above PSD, the position of the spot of the incident light on the PSD. Light receiving surface moves with the distance from the object to be measured. The resistance value of the PSD resistance layer will be divided according to the position of the incident light spot, and the output current of the PSD will change with the ratio of the 箸 resistance division. Therefore, the output current of the PSD can be measured according to the output current. Distancer. However, when the distance measurement is performed using the principle of triangulation, the position of the incident light spot on the light receiving surface will move greatly when the distance between the object and the object to be measured at a short distance changes. When the distance of the distant object to be measured changes, the position of the incident light spot does not move much. That is, in the past, the accuracy of distance measurement of a long-distance object is worse than the accuracy of measurement of a short distance. Therefore, the width of the resistance layer irradiated by the incident light spot is reduced by a linear function from the near side to the far side of the light receiving surface, so that the width of the incident light spot from the object to be measured at a long distance is reduced. Although the amount of movement is very small, it can also cause a large change in the resistance division ratio of the resistance layer, which is described in Japanese Patent Application Laid-Open No. 4-2 4 0 5 1 1. -3-This paper size is suitable for Chinese valve furniture ((: NS) Λ4 size (210X 297 male f) (¾Please read the precautions on the back before filling this page) ---------- ¾ lu.lr i JLrLiillLlmL: A7 B7 V. Description of the invention (>). However, the PSD described in Japanese Patent Application Publication No. 4-2 4 0 5 1 1 is to increase the width of the resistance layer from the far side to the near side. The distance side is enlarged by a linear function, and the width of the resistance layer is reduced by a linear function from the near side to the far side. This resistance layer is formed as a light receiving surface. The resistance layer can be considered to be connected by a small resistance Become a matrix-like small resistance assembly. The charge generated by the light incident on the resistance layer will be divided according to the resistance ratio of the incident light to the electrodes at both ends of the resistance layer, but if it is only arranged in the width direction of the resistance layer When a part of the small resistance group is irradiated with incident light in the shape of a light spot, the generated charges cannot pass uniformly along the length of the rubidium resistance layer. Therefore, the position and output of the incident light calculated from the shape of the resistance layer in theory The pseudo type of current, will There is a difference in the position and shape of each incident light. It is difficult to accurately calculate the position of the incident light from the output current in a single pseudo-formula. That is, when the correct position of the incident light is to be known from the output current. For each incident light position and shape of incident light, in other words, in other words, in the above PSD, only the entire small resistor group arranged in the width direction of the resistive layer is irradiated to the incident light, that is, narrow A single arithmetic circuit can be used to determine the position of the incident light only when the slit-shaped incident light is swept across the resistive layer. The object of the present invention is to solve the above-mentioned problem and provide a semiconductor position detection device, which can be more false than conventional ones. Those whose position detection accuracy is improved and there is no restriction on the shape of incident light. Special emblems of the semiconductor position detection device of the present invention: a conductive layer of a backbone formed by connecting most of the resistance regions in a predetermined direction; and from the backbone -4-(Please read the precautions on this page first? This page) ---- 、 tr # .i -UE-UEEE- This paper has four standards in Sichuan (('N S) Μ specifications (2 丨 0X 297 male f) A7 B7 Ministry of Economic Affairs " " ^ ',]' 工 "; 合 竹 " '^ ~ t 5. Description of the invention (3) 1 1 m The electrical layer extends along the light-receiving surface and follows the light-emitting position I of the person on the light-receiving surface of the Zhaoba W. Different meanings t can cause the current output from the two ends of the backbone conductive layer to be different. The resistive areas have essentially the same resistivity, please, and the width perpendicular to the predetermined direction is from the backbone conductive layer — the end to the other reading _. The end gradually widens 〇 and j Most of the resistive areas are in each resistance There are 1 areas in the area,. The surface has the branch conductive layer in between, and one side is more ideal. 1 1 matters 1 9 but each resistance area __. The surface is in contact with each other and the surface is connected. 0 items, 1; | incident Light The position will move with the distance of the object to be measured on the light receiving surface. The writing device I 0 will correspond to the charge generated by the / VS radiation of the incident light 畲 through the branch conductive page> 〆1 The I layer flows into the backbone conductive layer 0 The branched conductive layer is based on the position of the incident light | > The output current at both ends of the backbone conductive layer is differently extended on the light receiving 1 »I > Therefore 5 The position of the incident light can be measured by the output current 0! Order The width of most of the resistive regions constituting the backbone conductive layer is gradually widened from the end to the other end. The resistivity of each is substantially the same. Therefore, if the semiconductor position detection device is configured to be compatible with The charge generated by the incident light from the object to be measured that violates the distance 1 flows into the narrow resistance 1 ~ si line 1 area 1 is the change in the distance of the object to be measured 9 can only make the incident light level When there is a slight movement on the light-receiving surface, due to the narrow resistance 1 [the resistance value in the region is high> the current output from the two ends of the conductive layer of the backbone is also 1! Great change 0 I again> incident The light is generated by the light received by the branch conductive layer. The charge generated by the conductive layer will be divided by 1 | the resistance in the backbone conductive layer, so the width of # stem can be reduced by 1 1 9 The desired resistance value is 1 〇 when the impurity concentration is increased> It can be controlled Β1 Take a small impurity concentration for 1 1 I -5- 1 1 1 / 之… 漦) A7 B7 The Industrial Standards Bureau of the Ministry of Economic Affairs of the Standards Bureau of the People ’s Republic of China Eliminates the Seal of the Bamboo Industry ^ V. Description of the Invention (4) 1 1 The ratio of the overall impurity concentration will be reduced t can reduce the resistivity variation > and .1 1 1 can improve the position detection The degree of accuracy is 0 and the width of the electric field is M. From the end of the conductive layer of the backbone, the reading of the first-order function or the quadratic function of the position in the predetermined direction is preferred, and the incoming light will be projected to form There is a branched conductive layer on the light-receiving surface) Therefore, it is not necessary to limit the shape of the incident light. P. To use the degree of resistance of the resistance region is a bit of attention. The derived function is used to measure the distance and then calculate the distance from the current output from the two ends of the conductive layer of the backbone to the distance to be measured. Fill in the i 1 contents. Both ends of the layer 9 are provided with a 1 Ί 1 signal extraction electrode for taking out its output current, 9 as in the branch adjacent to the signal extraction electrode Guide 1; * 1 The electrical layer is radiated to incident light 9 and a part of the human light will be 眧 V ,, N will be incident on the letter 1, order 1 3m take out the position of the center of gravity of the incident light of the electrode. It will shift from the true position to the branch Conductive layer side> The accuracy of position detection will deteriorate. Therefore, another feature of the semiconductor position detection device of the present invention is that it is provided with a narrow resistance with Ef provided at one end of the conductive layer from the backbone. Zone 1, the branched m-layers of the line 1 domain extending adjacently are adjacent > a high-concentration semiconductor region with a lower resistivity than the backbone conductive layer) and are set to pass through the high-concentration in response to the incident light 1 Where the charge in the semiconductor region can flow through the backbone layer 1 1 The position where the electric layer can flow in and can take out the I signal of the above-mentioned output current. Take out the electrode 0 1 1 If no high-concentration semiconductor is set In domain 9, when the incident radiation hits the conductive layer 1 and the signal electrode extending from the backbone 1 1's electrical layer — the end portion with a narrow resistance area and the signal electrode, the human light will be blocked by the signal extraction electrode> 1 1 -C — 1 1 1 1 This paper is scaled in 1 state of Shizhou, and the national standard rate (('NS) Λ4 is present (2 丨 OX 29 * 7) 漦 A7 _________ B7_; ____ 5. Description of the invention (r) Signal extraction The output current of the electrode will decrease. However, the semiconductor position detection device of the present invention has a high-concentration semiconductor region and is irradiated to the high-concentration semiconductor; the charges generated by the incident light of the body layer will directly flow into the signal extraction electrode without going through the backbone conductive layer, so that The output current of the signal taking-out electrode increases, so that the position of the center of gravity of the incident light that can be calculated is close to the true position, and the accuracy of position detection is improved. When the backbone conductive layer is irradiated with light, the position of the incident light may deviate from the true position due to the shape of the light. Therefore, when higher accuracy is required, the semiconductor position detection device of the present invention further includes a light-shielding film formed on the backbone conductive layer. In this way, the accuracy of its position detection can be further improved. In addition, another feature of the semiconductor position detection device of the present invention is that: it has a pair of signal extraction electrodes that can respectively take out its output current from both ends of the backbone conductive layer; and the time when the backbone conductive layer is located at the signal extraction electrode is A light-shielding film of an insulating material covers the conductive layer on the backbone between the 取出 extraction electrodes. When the light-shielding film is made of an insulating material, although the entire area of the backbone conductive layer between the signal electrodes is covered, the signal extraction electrodes are not short-circuited. In addition, the light-shielding film is preferably formed by black photosensitivity. A common photoresist is used as a roll mold when forming elements such as metal wiring. In the present invention, the photoresist itself is black. A light-shielding film can be formed by irradiating light on the photoresist before hardening and developing it. [Best Mode for Implementing the Invention] The following describes the embodiment of the present invention, which has the same elements or the same functions. -7- This paper is a scale suitable for the Sichuan valve family standard date ((NS) M specifications (2 丨 0〆297 Public note) (Read the precautions on the back # /-, fill out this page)

、 1T ¼ After the whole part is clamped " bureau only -τ eliminates the combined bamboo. ^ 印? Table A7 B7 V. Description of the invention (6) The elements that can be used are the same symbols, and repeated descriptions are omitted. (First) embodiment

I No. 1 is a plan view of a semiconductor position detection device (hereinafter referred to as P S D) in the form of a first cell. FIG. 2 is a cross-sectional view of the arrow I-I of P S D shown in FIG. 1, and FIG. 3 is a cross-sectional view of the arrow I-I of the PSD shown in FIG. 1. It should be noted that the cross-sectional view of the PSD used in the description is one showing the sides. The PSD system of this embodiment includes a semiconductor substrate 2η formed of low-concentration η-type silicon (hereinafter referred to as Si), and a back surface side η formed of a high-concentration d-type S on the rear surface of the semiconductor substrate 2η. Type semiconductor layer In. The surface of the semiconductor substrate 2n is rectangular. In the description below K, the direction of the back side n-type semiconductor layer 1 η to the η-type semiconductor substrate 2 η is an upward direction, and the long side extension direction of the rectangular surface of the η-type semiconductor substrate 2 η is a length direction X and a short side extension. The direction is the width direction Υ, and the directions perpendicular to both the width direction X and the width direction 为 are the depth direction (thickness direction) Z. That is, directions X, ¥, and 2 are orthogonal to each other. This PSD is formed in the semiconductor substrate 2ri and has a backbone conductive layer Pn extending along the longitudinal direction X. The backbone conductive layer P is formed of a P-type Si, and the resistivity of the backbone conductive layer P N is lower than that of the semiconductor substrate 2η. The backbone conductive layer Pn is formed by connecting most of the P-type resistance regions Pi to P 20 along the length direction X of P S D, and is formed within the n-type semiconductor substrate 2 η. Each of the resistance regions P i to P 20 has substantially the same impurity concentration, and extends from the surface of the n-type semiconductor substrate 2 n in the width direction Z to a substantially same depth. Each of the resistance regions P i to P 20 has a resistivity P that is substantially the same. Each resistance area P 1 ~ P 2〇 -8- 氺 Paper size Shizhou Chinese national standard (('NS) Λ4 specification (2 丨 OX 297 male f) (Read the precautions on the back before you fill in this page ) • Assembling. The book is completed by the Ministry of Defence Standards Bureau-T eliminates the seal of the Bamboo Society A7 B7 V. Description of invention (7) The table becomes a trapezoid, and the top and bottom edges of the trapezoid surface are Parallel to the width direction Y, one of the remaining two sides, which lies on the outer edge of the PSD surface, is flat and runs in the length direction X, orthogonal to the top and bottom edges, and the other side forms the same angle as the length direction X. And the second sides are located on the same straight line respectively. Therefore, the contour of the PN surface of the backbone conductive layer is formed as a trapezoid as a whole. This PSD system is provided at the two ends of the PSD surface, and the conductive layers can be separated from the backbone. At both ends of the PN, one of the pair of signal extraction electrodes 1 e, 2 e is taken out. In the description below, the closest position of the signal layer le of the backbone conductive layer P n of M is used as the reference position of the length direction X (X = 0). In addition, among the sides constituting the surface of the backbone conductive layer PN, the sides parallel to the longitudinal direction X It is set as the reference position of the width direction Υ (Υ = 〇). The direction from the signal extraction electrode le to the signal extraction electrode 2e is the positive direction of X, and the direction from the backbone conductive layer Pn to the light receiving surface is the same as the square of Y. In the PSD of the present embodiment, the width Y of the backbone conductive layer Pn is gradually widened from the signal extraction electrode le toward 2e, and has a relationship of width Y = aX + b, but a and b are constants. This PSD system has Most branch conductive layers 4PN extending from the backbone conductive layer P n along the light-receiving surface. The branch conductive layer 4PN is formed of a high concentration of p-type Si. The impurity concentration of the branch conductive layer 4 PN is higher than the impurity concentration of the backbone conductive layer P n The resistivity of the branched conductive layer 4PN is lower than that of the backbone conductive layer P n. Most of the branched conductive layers 4 P i to 4 P ^ 9 constituting the branched conductive layer 4 PN are formed at η. Type semiconductor substrate 2 η, and from most of the resistance regions P i to P 2 ◦ which constitute the backbone conductive pn (please read the precautions on the back first # Fill this page). National Standard Soldier (CNS) 8 4 specifications (2 丨 0X 297 mm) A7 B7 V. Description of the invention (8 Extends along the width direction Y. The branch conductive layer 4 P i ~ 4 P 19 extends from the η-type semiconductor substrate 2 η surface along the width direction Z to a position deeper than the depth of the backbone conductive layer P n The length of the branched conductive layer 4P i ~ 4 P iS in the width direction Y is the same. In addition, the length of the branched conductive layer 4P N along the width direction Y is longer than the diameter of the incident light spot, so that The light spot does not irradiate the backbone conductive layer Pn. This PSD system has two ends of the backbone conductive layer Pn connected to the resistance regions Pi to P2 in the longitudinal direction X, and is formed in one of the semiconductor substrates 2n. The high-concentration signal extraction semiconductor layers Ip and 2p. The high-concentration signal extraction semiconductor layers 1 P and 2 p are formed of a high-concentration p-type Si. The high-concentration signal extraction semiconductor layers Ip and 2p extend from the surface of the semiconductor substrate 2 ri in the width direction Z to a position deeper than the depth of the resistance regions P i to P 20. The high-concentration signal extraction semiconductor calendars 1 P and 2 p each have a rectangular surface, and the long side is parallel to the width direction Y and the short side is parallel to the length direction X. Both ends of the backbone conductive layer PN are connected to the semiconductor layer Ip, 2p for high-concentration signal extraction by one edge of the rectangular surface of the semiconductor layer 1P, 2p for high-concentration signal extraction. In other words, one edge of the backbone conductive layer P n along the length direction X, that is, the resistance region P i with the narrowest width Y is one of the edges along the width direction γ connected to a semiconductor layer 1 p for high-concentration signal extraction. The other edge of the backbone conductive layer P n along the length direction X, that is, the resistance region P 20 with the widest width Y is one of the width direction Y connected to another semiconductor for high-concentration signal extraction 2 p. edge. -10 This paper size is applicable to Chinese jujube standard jujube ((, NS) 8 4 specifications (210X297) 漦 Please read the precautions before loading, J page 1T the Ministry of Economic Affairs Standards Bureau 1'iJ'J · Published in combination with the Bamboo Club '1,1 ^ Printed by the staff of the Central Standards Bureau of the Ministry of Economic Affairs, printed by the cooperative Λ 7 Β7 V. Description of the invention (9) This PSD is provided with a rectangular surface outside the semiconductor substrate 2 η The frame semiconductor layer 3 η. The outer frame semiconductor layer 3 η is formed of a high-concentration η-type Si. The outer semiconductor layer 3 η is formed in the outer edge region of the rectangular surface of the semiconductor substrate 2 η. The substrate surface area where the branch conductive layer 4PN, the backbone conductive layer Pν, and the high-concentration signal extraction semiconductor semiconductors 1ρ and 2ρ are taken out is surrounded by M, and the surface of the n-type semiconductor substrate 2 η extends along the width direction Z to a predetermined depth. The PSD system includes a branch conductive layer isolation semiconductor layer 4η formed in a semiconductor substrate 2n. The branch conductive layer isolation semiconductor layer 4η is formed of a high concentration of η-type Si. The branch conductive layer isolation semiconductor layer 4η is formed from mouth The inner side of one long side of the zigzag-shaped outer-frame semiconductor layer 3ri is formed by a plurality of n-type branch regions 4n ~ 4n20 extending in the direction of the backbone conductive layer PN along the width direction. Each branch region 4n ~ 4n20 is from the surface of the n-type semiconductor substrate 2n Extend to a predetermined depth along the width Z direction. The N-type branch regions 4N2 to 4N 19 have approximately the same depth as the P-type branch conductive layers 4P i to 4P 19, and are located between the branch conductive layers 4P i to 4P 19, Μ The branch conductive layers 4Pι ~ 4Ρ〜9 are electrically isolated. That is, the branch areas 4ηι ~ 4ηΐ3 are adjacent to each other of the branch conductive layers 4P i ~ 4 P19, preventing their current along the length direction X. Circulator. The outermost branched regions 4 ni and 4 η 2 (3 are located between the outermost branched conductive layers 4 P ： 1, 4 ρ 19 along the length direction X and the semiconductor layer 1 for high-concentration signal extraction 1 Between P and 2 p, K electrically separates the branched conductive layers 4 P i and 4 P is from the semiconductor layer 1 P and 2 ρ for high-concentration signal extraction. This PSI) is provided with a covering n-type semiconductor. -11- Rectangular surface of substrate 2 Applicable to China National Standard (CNS) Λ4 specification (210X297) 犮 ---------- install-(Please read the precautions on the back before ^ this page) Ordering Line | Staff of the Central Bureau of Standards, Ministry of Economic Affairs Printed by the consumer cooperative Λ7 B7 'V. Description of the invention (10) Purified 瞑 5'. In the experiment j form shown in Fig. 1 and K, the description of the passivation film 5 is omitted on the plane 鬪 of the PSD. The passivation film 5 has a pair of openings for signal extraction electrodes at both ends in the longitudinal direction, and has a mouth-shaped opening for a frame electrode on the outer periphery. The passivation film 5 is formed of silicon dioxide (S 0 2). The signal extraction electrodes 1 e and 2 e are respectively formed on the high-concentration signal extraction semiconductor layers Ip and 2p through the pair of signal-extraction electrode openings of the passivation film 5, and the high-concentration signal extraction semiconductor layers 1 p and 2 p respectively. M resistive contact. The surface shapes of the signal extraction electrodes le and 2e are the same as those of the semiconductor layers 1 P and 2 p for high-concentration signal extraction. This PS D image has an outer frame electrode 3 e formed on the n-type outer frame semiconductor layer 3 η through the opening for the outer frame electrode through the passivation film 5. The outer frame electrode 3 e can prevent light from entering the outer periphery of the semiconductor substrate 2 η. Alternatively, a predetermined voltage may be applied between the frame electrode 3e and the signal extraction electrodes le, 2e. This PSD system includes a lower surface electrode 4e formed on the lower surface of the n-type semiconductor layer In on the back surface side. The lower electrode 4e is in resistive contact with the n-type semiconductor layer 1nM on the back side. A voltage is applied between a pair of signal extraction electrodes le, 2e and the lower electrode 4e, and a reverse phase bias is applied to the pn junction diode composed of a P-type branch conductor 4Pn and an η-type semiconductor substrate 2η. Next, when the incident light spot M is focused on a light receiving surface defined by the n-type semiconductor substrate 2 n surface area formed by the branched conductive calendar 4PN, a positive hole electron pair is generated in the PSD in accordance with the incident light. (Charge), with the diffusion and the electric field inside the PSD, one of them will flow into the branch conductive layer 4 PN. This charge -12- This paper size is in accordance with Chinese National Standard (CNS). Λ4 is present (210X 297). Fn-nnt I-r tnn n tm ^ in ^ — US.-. (Please read the precautions on the back first · %: / Write this page) > Order-line W1 Central Ministry of Economics and Trademarks printed for Shellfish Consumer Cooperatives V. Description of the invention (11) 1 i 1? Conduction t in the branch conductive layer 4P N flows into the backbone conductive The predetermined area f of the layer Pν 'K is determined by the position of the backbone conductive layer Pκ of the predetermined resistance area in the direction of 1 degree in length > the amount of charge allocated > The electrodes 1 e and 2 e are taken out from both ends c. Read 1 In the PSD of this embodiment 9 has the branched conductive layer 4P N back i I 1 > the incident light will be / W \ The light-receiving surface 0 of the branch conductive layer 4P N is not affected by the shape of incident light due to i I 1, The correct detection of its position j can improve the accuracy of item 1's position detection than that of PSD towards M. 0 Script 1 1 In the description under M. 9 Corresponds to the incident on the light receiving surface, and page II The output currents from the signal extraction electrodes 1e and 2e are set to 11'1 and 12 ° 1, respectively. Figure 4 shows the distance measuring device 9 using PSD1 00 of Figure 1. The distance measuring device 1 is set to It can be installed on a photographic device such as a video camera. This measuring device can use either the PSD of the first figure as well as any of the PSD of 1 1 in each embodiment under K. 0 This ranging device is equipped with PSD 1 00 Light Emitting Diode 1 (LEE) 1 01 »Transmitting light m 102 J Condensing lens 103 > and 1K 1 circuit 104 0 and PSD 1 00 The above mentioned voltage is applied to PSD1 00 Configuration I is such that the length direction X is parallel to 1 distance (baseline length) between the optical axis of m 102 and 103 (line length specified by B) and its letter Brte extraction electrode 1 1 1 € is closer to the optical axis of lens 103 than signal extraction electrode II II In addition, the distance 1 1 f between the lens 102 103 and the light-receiving surface of PSD 1 0 0 is approximately the same as the distance between the points of m 102 and 103. 0 1 1 is close to EI. The letter 1 of the backbone conductive layer of the electrode 1 e is located at the edge 1 and the uniform light receiving surface is located on the optical axis of the condenser lens 103. 0 1 -1 3- 1 1 1 1 This paper size applies to the Chinese National Standard (CNS) / \ 4 Specifications (210X2W public view) Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs, A7, V. Description of the Invention (l2) The infrared rays emitted by the LED 1. 0 _] are illuminated by the projection lens 1 102. When the object OB 1 is measured at a short distance (L 1), the reflected light from the object O B 1 passes through the condenser lens 1 0 3, Close to the exit side of the light receiving surface P S D, i.e. close to the signal extraction electrode 2 e - side of the branch conductive layer 4 P N. In addition, the reflected light coming back from the measurement object Ο B 2 at a long distance (L 2) will be incident on the long distance of the PSD light receiving surface through the condenser 103. The side, that is, the branch near the signal extraction electrode 1 e-is conductive. Layer 4 P n. The light reflected by the measurement object 0B1 at a short distance lies at the incident position X 1 on the light receiving surface, and is located at a position away from the distance X 1 along the length of the PSD from the optical axis of the condenser lens 103. The light reflected by the distance measurement object 0B2 lies at the incident position X2 on the light receiving surface, and is located at a position separated from the optical axis of the condenser lens 103 by a distance X2 along the length of the PSD. The total length of the backbone conductive layer PN in the length direction X is set to C. The distance L (L1, L2) to the object to be measured and the spot position X (X1, X2) of the incident light have a relationship given by the following formula, and the relationship is as shown in FIG. 5. In the PSD of this embodiment, the base line length of M is B = 30 mm, and the focal distance f =. L = f X (B / X) -------- 〇) As shown in Figure 5, the longer the distance L, the greater the change in the distance L from the incident light spot position X will be The smaller. On the one hand, the width Y of the backbone conductive layer Pn and the position X in the length direction have a relationship of Y = aX + b, that is, the width Y of the resistance region P: 1 to P2 runs from the end of the backbone conductive layer PN to the length direction. The function of the first degree of position X. This situation -14- _ 2; _____-J ~ il! J .'-- i: 1--I 1-1 n--I- 衣衣-. I (Please read the note on the back first .V fill in this page)

'• IT 昙 The size of this paper is applicable to the Chinese National Standard Extraction (CNS) Λ4 specification (210X297 male stew) Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs ΗΊ 5. Invention Description (I3) In the shape of incident light position X and light The current relative output (%) has a relationship as shown in FIG. 6. Among them, suppose that the total length C of the backbone conductive layer P N is 100 wm, and the width Y and the position X are those that can satisfy Υ = 0.1 × + 10 (μπι). The relative output of the photocurrent refers to a ratio of the output current 11 and I 2 to the full output current 11 + I 2 at both ends of the backbone conductive layer PN. When the ratio R1 = I1MI1 + I2) and R2 = I2 / (I1 + I2) are calculated, the position of the incident light spot is 5 (can be obtained from the following formula. = 10 (1〇Ca / 〇 卜 叩 +10) Ca + Walx /? 2) — ——⑵ The arithmetic circuit 1 0 4 calculates its ratio R 1 and R 2 from the output currents 11 and I 2, and then calculates its position X, and then calculates its distance L from the storage in advance. In the memory of the table related to the position X, the distance L corresponding to the position X is retrieved, and the distance L is obtained. In addition, the incident light position X has a relationship of the following formula, so X can also be directly calculated by the following formula, and then> ; 乂 Calculate the distance L using the above formula. V 1 ㈣ 2) / (/ 1472), Jx — λ U — yj) j dj ---- (3> (Second Embodiment) Figure 7 is the second cell The PSD plan view of the form. The I-I arrow cross section and the I-I arrow cross section of the PSD in FIG. 7 are the same as those in FIG. 2 and FIG. 3, and the description is omitted. That is, the PSD in FIG. The PSD in Figure 1 is only the surface shape of the backbone conductive layer P n is different. The width Y of the backbone conductive layer PN and the position X in the length direction have a relationship of Y = a X 2 + b. That is, the resistance area P i ~ P The width Y of 20 is from the backbone conductive layer P One end of N plays a quadratic function of the position X along the length direction. In this case, the relative output of the incident light position X and the photocurrent (%) -15- (Please read the precautions on the back first. Ma 4 write Page) Order ---- line-=. »...... iiluErr; This paper size applies to Chinese National Standard (CNS) / \ 4 spot (210X297) Λ7, Central Bureau of Standards, Ministry of Economic Affairs Printed by the employee cooperative. V. The description of the invention (μ) has the relationship as shown in Section 8. Among them, it is assumed that the total length C of the backbone conductive layer P Νΐ is 1 0 0 0 um, and the width Υ and the position X are possible. If Y = 0. 0 0 0 1 X 2 + 1 0 (W m). When the ratio R 2 = I 2 / (I 1 + I 2) is calculated, the position X of the incident light spot can be obtained by the following formula X. «-\ lbja X tan {R2x tan ~ l (C / 4bja)) ---- ⑷ At this time, the arithmetic circuit 104 calculates from the output currents U and 12, and calculates its position after the ratio R 2 X, and then retrieve the distance L corresponding to the position X from the memory storing a table in which the relationship between the distance L and the position X is calculated in advance. Since the incident light position X has a relationship under K, it is also possible to directly calculate X from the following formula and then calculate the distance L · from the above formula. 12—xtarT (C / VWfl) | ", --- (5) and backbone conductive layer, it is set to backbone conduction X = 4b / a xtanl-xtan_1 (C / ^ / a)

Zlx / 2 Figure 9 is the relationship between the length position (resistance length) XPN width (resistance width) Y and the total length C of the electrical layer PN is 1 0 0 0 w Hi, and the remote side of the backbone conductive layer PN ( Near X = 0) the minimum value of width Y is 10 wm, and the maximum value of width Y at the near side of the backbone conductive layer PN (away from X = 0) is 10 0 um. When the width Y is a linear function of position X (Y = aX + b), the width Y at X = 100 " Bi and 200 " 1 »is 19w m and 2δ ". m, respectively. When the width Y is a quadratic function of the position X (Y = a X 2 + b), the width Y at X = 100 w m and 200 w m is 10.9.U m and 13.6 w m, respectively. As in the PSDs of the first and second embodiments, the width Y and the length position X of the backbone conductive layer P n can satisfy the linear function 16- This paper size applies the Chinese National Standard (CNS) / \ 4 specifications (210X297) Waste) (Please read the notes on the back first and fill in this page) II

、 1T --- line— -1 .....-. I ί I _- ·· .1 · 1- · = 1-—ι- ~ I -UEUU'-ul Staff Consumer Cooperatives, Central Standards Bureau, Ministry of Economic Affairs When the relationship between the description of the invention (15) (Y = a X + b) or the quadratic function (Y = a X 2 + b) is printed, Y will be very large relative to the change in X on the far side. The change. Therefore, when X and Y are in this relationship, when K has a general manufacturing accuracy of the backbone conductive layer PN, the width Y of the width relative to the manufacturing accuracy is very large, and the backbone conductive layer having the necessary characteristics can still be manufactured. PN !. Moreover, the relationship between these width Y and position X is to satisfy the relationship of the cubic function (Y = aX3 + b), and the width Y at X = 100um and 200 / im is 1 〇. 〇9 w πι And 1 0.72 w in, satisfying the relationship of the quartic function (Y = a X 4 + b), whose width Y at X = 100ίζπι and 200 wm becomes 10.009ytn and 10.144 / u.m, respectively, also That is, the change in the width Y is significantly reduced with respect to the change in the length direction X. Therefore, if there is a cubic function M between the width Y and the position X in the length direction, the width Υ must be controlled to a very high accuracy. For example, when K is usually manufactured with precision, its position detection accuracy will deteriorate. In addition, if it is to satisfy the above-mentioned relations of cubic and quartic functions, and make the width 时 when X = 1 0 0 M m and the relation of the quadratic function the same, even if Y = 10.9, when setting a value, The width Y on the near side (away from the position of X = 0) becomes 9 1 0 μm and 9 0 1 0 wm, respectively, that is, very wide. That is, if the width Y and the position X in the longitudinal direction are in a relationship of the cubic function M, to make the backbone conductive layer PN with the same general manufacturing accuracy as the first-order and quadratic functions, P S D must be extremely large. In the PSD of the above embodiment, the relationship between the width Υ of the backbone conductive layer PN and the position X in the longitudinal direction satisfies a linear function or a quadratic function. Therefore, the PSD can be widened without increasing the size of the light-receiving area- 17- 'This paper size is in accordance with Chinese National Standard (CNS) Λ4 ^ grid (210X 297 cm) — 丨 丨; -----— I— (Please read the precautions on the back before writing this page)

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i iF- :. I .I: .1.: 1-.1:-1 ^-1 ^ lE-mEI ^ j1-6 ·, li;-lnu ,,-FJ 11 Central Bureau of Standards, Ministry of Economic Affairs Printed by Employee Consumer Cooperatives 5. Invention Description (16) will not reduce the accuracy of the width of the backbone conductive layer, so the accuracy of position detection of these PSDs can be improved. (Third Embodiment) Fig. 10 is a PSD plan view of the third embodiment, Fig. 11 is a sectional view of the arrow I-I of the PSD shown in Fig. 10, and Fig. 12 is a view of the PSD shown in Fig. 10 I-E arrow cross section. The PS D of this real cell form is one in which a light shielding film 6 is added to the PS D of the first embodiment. The light-shielding film 6 is formed on the backbone conductive layer 卩, and shields the light incident on the backbone conductive layer Pn. When light is irradiated onto the backbone conductive layer P of PS D in the first embodiment, the calculated incident light position may deviate from the true value due to the shape of the light. Therefore, the semiconductor position detection device is equipped with a light-shielding film 6 formed on the backbone conductive layer Pn, and the position detection accuracy is further improved. The light-shielding film 6 can also be applied to the PS backbone D of the second embodiment in which the width M of the M-bone conductive layer P n is a quadratic function of the position X. The light-shielding film δ is formed by a light-sensitive resin containing a black pigment or dye, that is, a black-colored photoresist. That is, the light-shielding film 6 is an insulator, so when the K-light-shielding film 6 covers the entire area of the surface of the backbone conductive layer Pv, no short circuit is generated electrically between the signal extraction electrode 1e and the signal extraction electrode 2e. In addition, the light-shielding film 6 itself is formed of an ochre-colored photoresist. Therefore, after coating on the entire surface of the PSD, the light-shielding film 6 can be formed as long as it is exposed to the exposure light and M is developed in a predetermined pattern. Light-shielding film 6.一 18- (Please read the precautions on the back before you fill out this page) • Installation ·, 1Τ—line ilJLrr 卜 Ε ^ Ε ^ ϋ ^ ωΕ, ΙΜΓ .-. × ΓΓ-MXX This paper standard applies to Chinese national standards ( CNS) Λ4 specification (210 X 297) and A7 printed by the Women's Bureau of the Intermediate Standards Bureau of the Ministry of Economic Affairs-T Consumption Co., Ltd. A7 ___________ 丨 _B7 _'____ 5. Explanation of the invention ('7) (Fourth embodiment) Picture 13 It is a PSD plan view of the fourth embodiment, and FIG. 14 is a sectional view of the arrow I-I shown in FIG. 13 1 PS 1). Fig. 15 is a sectional view of the arrow II-II of the PSD shown in Fig. 13; In the PSD of this embodiment, in the PSD of the first embodiment, the shape of the resistance region P 1 to Pm of the backbone conductive layer PN is changed, the shape of the outer frame semiconductor 3n and the outer frame electrode 3e, and the branched conductive layer PN. Length in the width direction Y. The resistance regions Pi to P20 of the backbone conductive layer PN of this PSD also have a trapezoidal surface, but the edges of the light-receiving surface sides of the trapezoidal surfaces of each of the resistance regions Pi to Pm are parallel to the length direction X of the PSD and are on the same straight line. In addition, each of the resistance regions P 1 to P 2Q lies on the outer edge of the rectangular surface of the PSD, and intersects the longitudinal direction X at a predetermined angle. The width Y of the backbone conductive layer Pn and the longitudinal position X are Y = -aX-b Off. In addition, the inside edge of the square-shaped outer-frame semiconductor layer 3n, and the edge adjacent to the backbone conductive layer PN is parallel to the backbone conductive layer Pn lying on the outer edge of the rectangular surface of the PSD, that is, parallel to the straight line Y =-a X- b. In the PSD of this embodiment, the distance from the edge of the light-receiving surface side of the backbone conductive layer PN to the end of the branch conductive layer 4Pn is constant. Therefore, the resistance value of each branch conductive layer 4 P n from the edge of the backbone conductive layer P n to the light-receiving surface side becomes substantially constant, so it is possible to suppress the variation caused by the resistance value of the branch conductive layer 4PN in the width direction Y. Reduced position detection accuracy. In addition, if the inner side of the outer frame electrode 3 e is consistent with and close to the shape of the backbone conductive layer P n, the outer frame electrode 3 e can block the interference light incident on the outer side of the backbone conductive layer P n, which can be further advanced. Suppression of the reduction in position detection accuracy caused by this kind of interference light β -1 9-(#Read the precautions on the back before filling in this page) (, NS) Λ4 specification (2 丨 〇297297) Λ? 1Γ Printed by the staff of the Central Standards Bureau of the Ministry of Economic Affairs and printed by the cooperative V. Invention description (18) 丨 (Fifth embodiment) / 1 The 16th figure is the 5th A plan view of the PSD of the embodiment 9 FIG. 17 is a sectional view of the arrow I -1 of the PSD shown in FIG. 16 | FIG. 18 is a sectional view of the arrow I of the PSD shown in FIG. In the PSD of this fourth embodiment, in the PSD of the fourth reading embodiment, the signal extraction electrodes 1 e and 2 β are separated from the signal taken from m. A predetermined area is set between the supporting conductive layers 4P 1 4P 19 > The semiconductor layer 1 ρ., 2 ρ for extracting the concentration signal is taken out from the letter 1 e > 2 e Matter 1 1 extends below the IE Within this area, the high-concentration semiconductor region 11 P, page '—- 1 I 12 P directly above the high-concentration semiconductor region where the J-script 1 for the high-concentration signal is taken out and the extended portion of the semiconductor layer 1 ρ and 2 ρ is installed. > The signal extraction electrode 1 e Λ 2 e 5 Μ is not provided so that the incoming light can be incident on the high-concentration semiconductor region 11 P, 1 2 ρ which is 0 high-concentration 1 I-degree semiconductor region 11 P. 1 2 ρ and Take the predetermined interval between the outer branch conductive layers 4P 1 Λ 4P 13 1 1 > and extend along the width direction parallel to it 1 extend 1 d 1 0 so > if the incident light is incident on the high-concentration semiconductor region 11 P, 1 2 When ρ is 1 y in the high-concentration semiconductor domain 11 P 1 2 ρ Medium »Will flow to each of the signal extraction poles 1 e Λ 2 e near the high-concentration semiconductor regions 11 P and 12p. The charge > can pass directly through the backbone conductive layer PN • Line I > · ≫ 0 1 taken out of 2e, that is, > In the PSD of the fourth embodiment »If the incident light M light spot is condensed 1 1 The light is incident on the outermost PSD branch conductive layer 4P 1 Λ 4P 19 near the 1 I At this time, a part of the light spot will be covered by the signal extraction electrode 1 e 2e 1 1. Therefore, the position of the center of gravity of the incident light will shift as the light spot is covered by the part 1 I > However, in the PSD of this embodiment, f In this case > The charge generated as a result of concentrating the light spot on the light spot 9 can also be used in the high-concentration semiconductor region 1 1 PI -20- 1 1 1 This paper size applies to China National Standards (CNS) Λ4 Specifications (210X2y7 Gong Yan) Consumer Co-operation of the Central Standards Bureau of the Ministry of Economic Affairs Printed by the company Λ 7 IP 5. Description of the invention (19), 1 2 P plus K collection, can further improve the accuracy of P S D position detection. (Sixth Embodiment) Fig. 19 is a PSD plan view of the sixth embodiment. Fig. 20_ is a cross-sectional view of the arrow I-I of the PSD shown in Fig. 19, and Fig. 21 is shown in Fig. 19 A cross-sectional view of the arrow I-I of the PSD is shown. In the PSD of this embodiment, in the PSD of the fourth embodiment, a part of the signal extraction electrodes 1 e and 2 e is removed, and the high-concentration signal extraction semiconductor layer directly below the signal extraction electrodes le and 2 e is removed. 1 P and 2 P are high-concentration semiconductor regions 1 1 P and 1 2 p, and M allows incident light to be incident on the high-concentration semiconductor regions 1 1 P and 12ρ. The high-concentration semiconductor regions lip, 12ρ and the outermost branched conductive layers 4P i, 4P 19 are separated by a predetermined interval, and extend along a width Y direction parallel to them. Therefore, when the incident light is incident on the high-concentration semiconductor regions IIP and 12P, the charges generated and collected by the high-concentration semiconductor regions IIP and 12P will flow into each of the high-concentration semiconductor regions lip and 12p. The charge of the signal taking-out electrodes le, 2e can be taken out directly by the signal taking-out electrodes le, 2e without going through the backbone conductive layer PN. That is, in the PSD of the fourth embodiment, if the spot light of the incident light M is condensed and incident on the outermost PSD branch conductive layer 4. P: 1, 4 P 13, a part of the light spot receives a signal. The electrodes 1 e and 2 e are taken out, so the position of the center of gravity of the light emitted by the person will shift as the light spot is covered. However, in the PSD of this embodiment, in this case, the The charges generated by the light spot condensing are collected in the high-concentration semiconductor regions 1 P and 12p plus M, which can further improve the position detection accuracy of the PSD. -2 1------------- install-(Please read the notes on the back first and fill in this page)

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Ilf I 线 _ μ ^ ρρρΕΙΕ ^. ΊΕ ″ Γ'Ε1 * This paper size applies to Chinese National Standard (CNS) A4 «L grid (210X 297 and) ΙΓ. 5. Description of the invention (20) In addition, the signal extraction electrode 1 e, 2 e are the extension lines arranged on both ends of the backbone conductive layer ρ ν in the length direction X, but are not arranged on the extension lines of both ends of the light receiving surface forming the branch conductive layer 4 PN in the length direction X. When the signal extraction electrodes 1e and 2e are arranged as described above, compared with the PSD of the fifth embodiment, the length of the PSD in the longitudinal direction X can be shortened, and the PSD can be miniaturized. (Seventh embodiment) Fig. 22 is a plan view of the PSD in the seventh solid pickled form, Fig. 23 is a sectional view of the arrow I-I of the PSD shown in Fig. 22, and Figs. I-E arrow sectional view of PSD. The PSD of this embodiment is a light shielding film 6 formed on the backbone conductive layer Pn of the PSD of the sixth embodiment. The light-shielding film 6 is a light-sensitive resin containing a black pigment or dye, that is, a black photoresist. (Embodiment 8) Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs ----- 1 ^! (Read the precautions on the back and write this page) 、-= a 丨 The 25th picture is the 8th The PSD plan view of the embodiment, FIG. 26 is a cross-sectional view taken along the arrow I-I of the PSD shown in the 25th circle, and FIG. 27 is a cross-sectional view taken along the arrow I-I of the PSD shown in the 25th diagram. In the PSD of this embodiment, in the PSD of the sixth embodiment, the signal extraction electrodes 1 e and 2 e are arranged so as to straddle the resistance regions P t and P 2 located at both ends in the longitudinal direction X of the backbone conductive layer P ν. 〇 and the high concentration signal extraction semiconductor layer 1 ρ, 2 ρ. The resistance regions P i and P 20 at both ends are directly connected to the signal extraction electrodes 1 e and 2 e, respectively, and the high-concentration semiconductor regions 1 1 p and 1 2 ρ are also directly connected to the signal extraction electrodes 1 e and 2 e. In this PSD, the electric charge from the backbone conductive layer P ν and the electric charge collected in the high-concentration semiconductor region 1 1 P, 1 2 ρ-2 2-This paper standard is applicable to China National Standard (CNS) 210 × 29 "; public and ) A7 B7 V. Description of the invention (-) It can be directly taken out by the signal · removal electrodes le and 2e. (Ninth Embodiment) Fig. ^ Is a PSD plan view of the ninth embodiment, Fig. 29 is an I-I arrow section 圔 of the PSD shown in the 28th circle, and Fig. 30 is a II of the PSD shown in Fig. 28- II arrow cross section. In the first embodiment, the PSD is formed such that the backbone conductive layer Pn, the branch conductive layer 4PN, and the high-concentration signal extraction semiconductor layers IP and 2p have substantially the same impurity concentration. In this PSD, a p-type impurity is added to the semiconductor substrate 2n, and the backbone conductive layer Pn, the branch conductive layer 4Pn, and the high-concentration signal extraction semiconductor layers lp and 2p are simultaneously produced. When the impurity concentration of the high-concentration signal extraction semiconductor layers 1 P and 2 p is increased so as to be in resistive contact with the 佶 extraction electrodes le and 2e, the resistivity of the backbone conductive layer of the resistance layer decreases. Therefore, by reducing the depth Z of the backbone conductive layer PN and increasing the resistivity, a desired resistance value can be obtained. In the PSD of this embodiment, the backbone conductive layer, the branch conductive layer 4PN, and the high-concentration signal extraction semiconductor layer IP and 2 p have high impurity concentrations, and the depth Z in the width direction of the surface is the same, but The depth Z is very deep. Therefore, the semiconductor layers lp and 2P for high-concentration signal extraction are resistively contacting the signal extraction electrodes 1 e and 2 e, and the backbone conductive layer PN has a sufficient resistance value for position detection. In addition, the n-type branch region 4 η 2 to 4 n 19 has a deeper depth than the P-type branch conductive layer 4 P i to 4 P 20, and therefore may be located between the branch conductive layers 4 P 1 to 4 P. Furthermore, the branch conductive layers 4P1 ~ 4P? _〇 are electrically isolated. The branch areas 4η.ι and 4 n so are respectively located between the outermost branch conductive layers 4 P 1 and 4 P ® along the length direction X and the semiconductor layers 1 p and 2 ρ for high-concentration signal extraction. -2 3-This paper uses the Chinese standard. Sf (ΓΝ5 >) Λ4 size (210X297 male f) _ Γ. — Li ______I _ 士 k__ (Please read the notes on the back to complete this page first) Order 丨昙 Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A ΙΓ 5. Description of the invention (22), the branch conductive layers 4 P i, 4 P 20 and the semiconductor layer 1 P, 2 p for high-concentration signal extraction are respectively in electrical Isolated on M. According to the PSD of this embodiment, the backbone conductive layer Pv, the branch conductive calendar 4PN, and the high-concentration signal can be manufactured in the same process to take out the semiconductor layer 1P, 2P. Therefore, compared with the PSD of the above embodiment, It is easier to manufacture. (10th embodiment) Fig. 31 is a PSD plane 圏 of the tenth embodiment, Fig. 32 is a cross-sectional view of the arrow I-I of the PSD shown in Fig. 31, and Fig. 3 is a drawing shown in Fig. 31 H-1I arrow cross section of PSD. The PSD of this embodiment is such that the width Y of each of the resistance regions P1 to P20 constituting the backbone conductive calendar PN is formed to be one-half of the width of the resistance regions P1 to P20 of the PSD of the first embodiment, and K Set along the center line of the width direction Y of the PSD length direction X, and the resistance area? 3_ ~? 2◦Resistant resistance areas P 21 ~ 40 on the line, and connect the K-branch conductive layer 4 P n between the resistance areas with symmetrical relationship, and take out the signal M resistance area P between the electrodes 1 e and 2 e. 1 ~ P 20 and resistance area P 21 ~ P 40 are connected in parallel. (Eleventh embodiment) Fig. 34 is a PSD plan view of the eleventh embodiment, Fig. 35 is an I-I arrow sectional view of the PSD shown in Fig. 34 (), and Fig. 36 is a PSI shown in picture 34) E-I arrow sectional view. In the PSD of this embodiment, in the PSD of the first embodiment, the resistive regions P i to P constituting the backbone conductive layer P n are: the even-numbered resistive region P 2n (where η is an integer of 1 to 10) ), K follows the center line of the width direction Υ of the PSD length direction X, and moves symmetrically on the line, and applies the even-numbered resistance area P2n. This paper size applies the Chinese National Standard (CNS) Λ4 specification (210X 297 male) (Garbage) ΙΓΓ .-------- Installation || (谙 Please read the precautions on the back to write this page), 1T 1st-line Ministry of Economic Affairs, the Consumers 'Cooperatives of the Bureau of Labor Insurance, a! This A7 B7' V. Invention Explanation (W) is connected to the adjacent. The odd-numbered resistance regions Ph-i, P2n + 1 (2 Π + 1 < 2 1) are connected by the branch conductive layer 4 ρ ν, and the signal extraction electrodes 1 e, 2 e Those are connected in series with Pi 1 area Pi ~ P20. (12th embodiment) Fig. 37 is a plan view of the PSD of the second embodiment. Fig. 38 is a sectional view of the arrow I-I of the PSD shown in Fig. 37, and Fig. 39 is a PSD shown in Fig. 37. II-II arrow cross section swollen U The PSD of this embodiment is the PSD of the first embodiment in which the conductive layer constituting the backbone conductive layer [(^ ~ P 2 of each resistance region Pi ~ P 2〇 is in the center line of the direction Y , And the PSD rectangular surface is consistent with the center line of the width direction Y along the length direction X. As explained above, the semiconductor position detection device of the present invention is a charge generated by the photoelectric effect collected by the branch conductive layer, It is taken out from both ends of the backbone conductive layer with variable width. Therefore, it is not restricted by the shape of the incident light such as dots or slender shapes, and it is possible to take out a high-accuracy output current corresponding to distance from the semiconductor position detection device. Utilization possibilities] The semiconductor position detection device (PSI) of the present invention is a device for measuring the distance of an object to be measured using the principle of triangulation, etc., as an active distance measuring device mounted on a camera, etc. Photography machine. [Brief Description of the Drawings] FIG. 1 is a PSD plane 圔 related to the first embodiment. Fig. 2 is a sectional view of the arrow I-I of the PSD shown in Fig. 1. Fig. 3 is a cross-sectional view taken along the line II-II of the PSD shown in Fig. 1. -25- (Read the notes on the back first and then write this page) 31— mu n _ 0¾ Order

Quan I This paper is standard in Shizhou, and the standard is _siM) 8 specifications (210X 297 gong) Λ 7 Member of the Central Standards Bureau of the Ministry of Economic Affairs H; printed by the cooperative ___ V. Description of the invention (24) No. 4 The figure shows the structure of a ranging device using PSD. Fig. 5 is a graph showing the relationship between the measurement distance L (m) and the incident light position X («m). Fig. 6 is a graph showing the relationship between the position X (um) of the human light spot and the photocurrent relative output U). FIG. 7 is a plan view of the PSD of the second embodiment. Fig. 8 is a graph showing the relationship between the spot position X (u π) of the incident light and the relative output (%) of the photocurrent. Fig. 9 is the relationship curve 长度 of resistance length (xzm) and resistance width (ΜΠ!). Fig. 10 is a PSD plan view of the third embodiment. Fig. 11 is a sectional view of the arrow I-I of the PSD shown in Fig. 10. FIG. 12 is a cross-sectional view of the arrow S-1 of the PSD shown in FIG. 10. Fig. 13 is a plan view of a PSD according to a fourth embodiment. Fig. 14 is a sectional view of the arrow I-I of the PSD shown in Fig. 13. Fig. 15 is a sectional view of the arrow H-I of the PSD shown in Fig. 13; Fig. 16 is a plan view of a PSD according to a fifth embodiment. Fig. 17 is a cross-sectional view of the arrow I-I of the PSD shown in Fig. 16. Fig. 18 is an I-I arrow section _ of the PSD shown in Fig. 16. Fig. 19 is a plan view of PS D according to the sixth embodiment. Fig. 20 is a sectional view of the arrow I-I of the PSD shown in Fig. 19. Figure 21 is a sectional view of the arrow E-I of PS D shown in Figure 19. Fig. 22 is a plan view of a PSD according to a seventh embodiment. Fig. 23 is a sectional view of the arrow I-I of the PSD shown in Fig. 22; 1 2 6-This paper size is applicable to China National Standard (CNS) / \ 4 specifications (210Χ 297 ~ ^ Γ7 (please read the precautions on the back first to break this page) --- I n ^ i --- Order -线 --Γ. 馨

IP V. Description of the Invention (25) Figure 24 is an E-Η arrow sectional view of the PSD shown in Figure 22. Fig. 25 is a plan view of a PSD relating to a δ embodiment. Fig. 26 is an I-I arrow sectional view of P S D shown in Fig. 25. Fig. 27 is an I-E arrow sectional view of P S D shown in Fig. 25. Fig. 28 is a plan view of a PSD according to a ninth embodiment. Fig. 29 is an I-I arrow sectional view of the PSD shown in Fig. 2δ. Fig. 30 shows the] I-I [arrow section 圔 of the PSD shown in Fig. 2δ. Fig. 31 is a PSD plan view of the tenth embodiment. Fig. 32 is a sectional view of the arrow I-I of the PSD shown in Fig. 31. Fig. 33 is a sectional view of arrow I-E of the PSD shown in Fig. 31. Fig. 34 is a PSD plan view showing the eleventh embodiment. Fig. 35 is a sectional view of arrow I-I of the PSD shown in Fig. 34. Fig. 36 is a sectional view of arrow 2-E of the PSD shown in Fig. 34. Fig. 37 is a plan view of the PSD according to the twelfth embodiment. Figure 38 is the I-I arrow section of the PSD shown in Figure 37. Figure 39 is the I-I arrow section of the PSD shown in Figure 37. Please read the note on the back first and fill in this page.) · Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs 27- This paper size applies to Chinese National Standards (CNS) Λ4 specifications (2 丨 0X29? Public waste) V. Description of the invention (26 (Reference symbol description) Signal extraction electrode 3 e 4 e In 2 π 3 η 4 π 4η wide 4η20 r μ P 1 to P 20, P 21 4P μ 4 P 1 to 4 P 11 5 n-type semiconductor calendar under the outer-frame electrode on the back side of the semiconductor substrate outer-layer semiconductor layer branch conductive Semiconductor layer branch area for layer isolation Backbone conductive layer Resistive area Branch conductive layer Branch conductive layer High-concentration signal extraction Semiconductor layer High-concentration semiconductor area passivation film (Please read the precautions on the back / ^ write this page)-Installation, 1T Economy Printed by the Consumer Standards Cooperative of the Central Bureau of Standards.

6 100 10 1 1 0 2 103 104 B OBI 0B2 II, 12 Light-shielding film PSD (semiconductor position detection device) V:-Light-emitting diode (LED) Lens for projection lens Condensing lens arithmetic circuit Optical axis distance (baseline Length) The output current of the object to be measured. The paper size is applicable to the Chinese National Standard (CNS) / \ 4 specifications (210X297 * ^).

Claims (1)

The printed layer of the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs directs the light guide to Φ »Fang Diangui, one of which is fixed at the vertical end, and the upper layer of bone is pre-dried and placed along the other side. The end resistance makes the resistance check .. And, the dry electricity placement of the layer containing the connected bone layers encloses the electricity from the same body, to the light, and the phase guide is different; Presence of osseous electricity measured on the phase layer is measured. The electrical conductivity is 1 and the degree of solidity of the localization plane is the highest. The light output is divided into the pseudo-wide perimeter body and the input field is blocked. Fan Kuan ’s electrical conductivity is inferior to the resistance of the many areas to c. The special area of the resistance is more than two because of the two extensions. The area can be extended by the pre-expansion. 1. The electrical surface is gradually becoming electric. A8 B8 C8 D8 Those who apply for patents range from linear functions or quadratic functions to positions. 3. The semiconductor position picking and testing device according to item 1 of the patent application scope, further comprising: a predetermined branch conductive layer extending from the end of the backbone conductive layer and having the narrowest resistance area, adjacent to each other, having a specific ratio The high-concentration semiconductor region with low resistivity of the backbone conductive layer and the charge that passes through the high-concentration semiconductor region in response to incident light are provided at positions where the conductive layer of the backbone can flow in without taking out a signal that outputs an electric current. By. 4. The semiconductor position detection device according to item 2 of the patent application scope, the image further includes: a light-shielding film formed on the conductive layer of the backbone. .If you apply for the semiconductor position detection device in the scope of patent application No. 4, it is more equipped with ... 2 9 This paper size is applicable to Chinese national standards (CNS> A4 specification (210X297 mm) (Please read the notes on the back first to write this Page Γ 8 8 8 8 ABCD 6. The scope of the patent application can be used to 'take out one pair of signal extraction electrodes from the output current at both ends of the conductive layer of the backbone; The conductive layer of the backbone is located between the signal extraction electrodes, and the light-shielding film is formed of an insulating material. The signal was taken out of the conductive layer of the backbone between the electrodes to the M cover. 6. The semiconductor position detecting device according to item 5 of the scope of patent application, wherein the light-shielding film is formed of a black-colored photosensitive adhesive. (Please read the precautions on the back before writing this page), 1T line · Printed by EEbEfeFrE ^ E 'from the Consumer Cooperatives of the Central Directorate of the Ministry of Economic Affairs. "ΊΓ"-; li;-; lK »This paper size applies China National Standard (CNS) Α4 specification (210 × 297 mm)