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TW376465B - Method for automatically generating assist phase shifting mask (PSM) - Google Patents

Method for automatically generating assist phase shifting mask (PSM)

Info

Publication number
TW376465B
TW376465B TW087114624A TW87114624A TW376465B TW 376465 B TW376465 B TW 376465B TW 087114624 A TW087114624 A TW 087114624A TW 87114624 A TW87114624 A TW 87114624A TW 376465 B TW376465 B TW 376465B
Authority
TW
Taiwan
Prior art keywords
phase shifting
psm
automatically generating
pattern
shield layer
Prior art date
Application number
TW087114624A
Other languages
Chinese (zh)
Inventor
Jin-Long Lin
yao-jin Gu
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW087114624A priority Critical patent/TW376465B/en
Application granted granted Critical
Publication of TW376465B publication Critical patent/TW376465B/en

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

A method for automatically generating an assist PSM, which comprises adding an assist feature on the periphery of an original circuit pattern, removing the Cr-film on the mask that is not covered by the photoresist by etching and leaving the original circuit pattern and the assist feature as the shield layer, defining the formed phase shifting layer wherein the pattern thereof covering one half of the original circuit pattern in the shield layer and the assist feature, defining by using a negative photoresist to selectively removing the quartz substrate below the Cr-film, i.e. the defined portion of the pattern will be etched off. Therefore, the exposed quartz substrate between the shield layer will be etched of thereby forming a 180 degrees phase shifting angle during exposure.
TW087114624A 1998-09-03 1998-09-03 Method for automatically generating assist phase shifting mask (PSM) TW376465B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW087114624A TW376465B (en) 1998-09-03 1998-09-03 Method for automatically generating assist phase shifting mask (PSM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW087114624A TW376465B (en) 1998-09-03 1998-09-03 Method for automatically generating assist phase shifting mask (PSM)

Publications (1)

Publication Number Publication Date
TW376465B true TW376465B (en) 1999-12-11

Family

ID=57941994

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087114624A TW376465B (en) 1998-09-03 1998-09-03 Method for automatically generating assist phase shifting mask (PSM)

Country Status (1)

Country Link
TW (1) TW376465B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6493865B2 (en) 2000-04-10 2002-12-10 Infineon Technologies Ag Method of producing masks for fabricating semiconductor structures

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6493865B2 (en) 2000-04-10 2002-12-10 Infineon Technologies Ag Method of producing masks for fabricating semiconductor structures

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Legal Events

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