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TW366594B - Manufacturing method for DRAM capacitor - Google Patents

Manufacturing method for DRAM capacitor

Info

Publication number
TW366594B
TW366594B TW087100407A TW87100407A TW366594B TW 366594 B TW366594 B TW 366594B TW 087100407 A TW087100407 A TW 087100407A TW 87100407 A TW87100407 A TW 87100407A TW 366594 B TW366594 B TW 366594B
Authority
TW
Taiwan
Prior art keywords
forming
manufacturing
sacrifice layer
layer
dram capacitor
Prior art date
Application number
TW087100407A
Other languages
Chinese (zh)
Inventor
Szu-Min Lin
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW087100407A priority Critical patent/TW366594B/en
Priority to US09/055,685 priority patent/US5998260A/en
Application granted granted Critical
Publication of TW366594B publication Critical patent/TW366594B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

Manufacturing method for DRAM capacitor by using a sacrifice layer for forming model having gearing profile for the making of storage electrode on the highly-effective surface, being the forming of the sacrifice layer model by stacking two insulation layers one on the other on the dielectric layer and defining in a conventional manner for forming an opening before, by dealing with the different properties of the insulation layer in term of etching, select an etching solution, making the two insulation layers have different etching selection rate for stripping one of the two, forming a dent area, the sacrifice layer in the opening would become the gearing profile.
TW087100407A 1998-01-14 1998-01-14 Manufacturing method for DRAM capacitor TW366594B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW087100407A TW366594B (en) 1998-01-14 1998-01-14 Manufacturing method for DRAM capacitor
US09/055,685 US5998260A (en) 1998-01-14 1998-04-06 Method for manufacturing DRAM capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW087100407A TW366594B (en) 1998-01-14 1998-01-14 Manufacturing method for DRAM capacitor

Publications (1)

Publication Number Publication Date
TW366594B true TW366594B (en) 1999-08-11

Family

ID=21629338

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087100407A TW366594B (en) 1998-01-14 1998-01-14 Manufacturing method for DRAM capacitor

Country Status (2)

Country Link
US (1) US5998260A (en)
TW (1) TW366594B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113345896A (en) * 2020-03-03 2021-09-03 华邦电子股份有限公司 Dynamic random access memory device and manufacturing method thereof

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US6114201A (en) * 1998-06-01 2000-09-05 Texas Instruments-Acer Incorporated Method of manufacturing a multiple fin-shaped capacitor for high density DRAMs
US6130126A (en) * 1998-06-26 2000-10-10 Texas Instruments Incorporated Self-planarizing DRAM chip avoids edge flaking
US6063683A (en) * 1998-07-27 2000-05-16 Acer Semiconductor Manufacturing, Inc. Method of fabricating a self-aligned crown-shaped capacitor for high density DRAM cells
US6094335A (en) * 1998-10-09 2000-07-25 Advanced Micro Devices, Inc. Vertical parallel plate capacitor
US6344392B1 (en) * 1998-11-16 2002-02-05 Vanguard International Semiconductor Corporation Methods of manufacture of crown or stack capacitor with a monolithic fin structure made with a different oxide etching rate in hydrogen fluoride vapor
JP3298553B2 (en) * 1999-04-19 2002-07-02 日本電気株式会社 Method of forming storage capacitor section of semiconductor device
US6315834B1 (en) * 1999-10-25 2001-11-13 Utek Semiconductor Corp. Method for removing extraneous matter by using fluorine-containing solution
KR100338958B1 (en) * 2000-08-31 2002-06-01 박종섭 Method for forming a capacitor of a semiconductor device
US6624018B1 (en) 2001-04-23 2003-09-23 Taiwan Semiconductor Manufacturing Company Method of fabricating a DRAM device featuring alternate fin type capacitor structures
CA2702143C (en) 2001-06-05 2014-02-18 Mikro Systems, Inc. Methods for manufacturing three-dimensional devices and devices created thereby
US7785098B1 (en) 2001-06-05 2010-08-31 Mikro Systems, Inc. Systems for large area micro mechanical systems
US7141812B2 (en) 2002-06-05 2006-11-28 Mikro Systems, Inc. Devices, methods, and systems involving castings
US7518136B2 (en) 2001-12-17 2009-04-14 Tecomet, Inc. Devices, methods, and systems involving cast computed tomography collimators
US7462852B2 (en) * 2001-12-17 2008-12-09 Tecomet, Inc. Devices, methods, and systems involving cast collimators
WO2004052974A2 (en) * 2002-12-09 2004-06-24 Tecomet, Inc. Densified particulate/binder composites
US9315663B2 (en) 2008-09-26 2016-04-19 Mikro Systems, Inc. Systems, devices, and/or methods for manufacturing castings
US8813824B2 (en) 2011-12-06 2014-08-26 Mikro Systems, Inc. Systems, devices, and/or methods for producing holes
US11011523B2 (en) * 2019-01-28 2021-05-18 Micron Technology, Inc. Column formation using sacrificial material

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Publication number Priority date Publication date Assignee Title
US5164337A (en) * 1989-11-01 1992-11-17 Matsushita Electric Industrial Co., Ltd. Method of fabricating a semiconductor device having a capacitor in a stacked memory cell
US5170233A (en) * 1991-03-19 1992-12-08 Micron Technology, Inc. Method for increasing capacitive surface area of a conductive material in semiconductor processing and stacked memory cell capacitor
KR0155785B1 (en) * 1994-12-15 1998-10-15 김광호 Fin capacitor & its fabrication method
DE19546999C1 (en) * 1995-12-15 1997-04-30 Siemens Ag Capacitor mfg system for semiconductor device
US5656536A (en) * 1996-03-29 1997-08-12 Vanguard International Semiconductor Corporation Method of manufacturing a crown shaped capacitor with horizontal fins for high density DRAMs
US5789267A (en) * 1996-08-23 1998-08-04 Mosel Vitelic, Inc. Method of making corrugated cell contact
US5677222A (en) * 1996-10-11 1997-10-14 Vanguard International Semiconductor Corporation Method for forming a DRAM capacitor
US5843822A (en) * 1997-02-05 1998-12-01 Mosel Vitelic Inc. Double-side corrugated cylindrical capacitor structure of high density DRAMs
TW345714B (en) * 1997-03-22 1998-11-21 United Microelectronics Corp Capacitive structure of DRAM and process for producing the same
US5770499A (en) * 1997-05-29 1998-06-23 Texas Instruments Incorporated Planarized capacitor array structure for high density memory applications
US5879987A (en) * 1998-02-21 1999-03-09 Wang; Chuan-Fu Method of fabricating dynamic random access memory having a stacked capacitor
TW373323B (en) * 1998-03-18 1999-11-01 United Microelectronics Corporaiton Dynamic RAM production method
US5907782A (en) * 1998-08-15 1999-05-25 Acer Semiconductor Manufacturing Inc. Method of forming a multiple fin-pillar capacitor for a high density dram cell

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113345896A (en) * 2020-03-03 2021-09-03 华邦电子股份有限公司 Dynamic random access memory device and manufacturing method thereof
CN113345896B (en) * 2020-03-03 2023-09-22 华邦电子股份有限公司 Dynamic random access memory device and manufacturing method thereof

Also Published As

Publication number Publication date
US5998260A (en) 1999-12-07

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