TW366581B - Metallization method of forming tungsten plug in making ICs - Google Patents
Metallization method of forming tungsten plug in making ICsInfo
- Publication number
- TW366581B TW366581B TW087104951A TW87104951A TW366581B TW 366581 B TW366581 B TW 366581B TW 087104951 A TW087104951 A TW 087104951A TW 87104951 A TW87104951 A TW 87104951A TW 366581 B TW366581 B TW 366581B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- contact
- tungsten
- tungsten plug
- semiconductor
- Prior art date
Links
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title abstract 8
- 229910052721 tungsten Inorganic materials 0.000 title abstract 8
- 239000010937 tungsten Substances 0.000 title abstract 8
- 238000001465 metallisation Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000010410 layer Substances 0.000 abstract 10
- 239000004065 semiconductor Substances 0.000 abstract 5
- 229910021332 silicide Inorganic materials 0.000 abstract 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 4
- 238000009413 insulation Methods 0.000 abstract 3
- 239000012790 adhesive layer Substances 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The present invention discloses a new method for forming metal tungsten plug in making ICs using chemical adhesive layers being the semiconductor formed on the inside and the surface of the semiconductor substrate and the insulation layer covering the semiconductor structure, having one contact opening through the insulation layer to reach one of the semiconductor structures. The silicide substance is deposited on the surface of the insulation layer and inside the contact opening, in contact with the bonded Ohm in contact and adhesive layer. In the first embodiment, the tungsten layer is deposited on the silicide layer and the tungsten layer not inside the opening of the contact is removed, forming the metallization of the tungsten plug. In the second embodiment, the silicide layer not inside the contact is selectively removed and the tungsten layer selectively removed, the tungsten layer is selectively deposited on the silicide layer inside the contact, accomplishing the forming of metallized tungsten plug in the making of semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW087104951A TW366581B (en) | 1998-03-31 | 1998-03-31 | Metallization method of forming tungsten plug in making ICs |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW087104951A TW366581B (en) | 1998-03-31 | 1998-03-31 | Metallization method of forming tungsten plug in making ICs |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW366581B true TW366581B (en) | 1999-08-11 |
Family
ID=57941155
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW087104951A TW366581B (en) | 1998-03-31 | 1998-03-31 | Metallization method of forming tungsten plug in making ICs |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW366581B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8431485B2 (en) | 2010-07-14 | 2013-04-30 | Taiwan Memory Company | Manufacturing method for a buried circuit structure |
-
1998
- 1998-03-31 TW TW087104951A patent/TW366581B/en active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8431485B2 (en) | 2010-07-14 | 2013-04-30 | Taiwan Memory Company | Manufacturing method for a buried circuit structure |
| TWI403235B (en) * | 2010-07-14 | 2013-07-21 | Taiwan Memory Company | Manufacturing method for a buried circuit structure |
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