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Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW084101619ApriorityCriticalpatent/TW363269B/en
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Publication of TW363269BpublicationCriticalpatent/TW363269B/en
A kind of manufacturing method of capacitors used for memory cells of DRAM which includes the following steps: forming the first insulation layer, the first barrier, the second insulation layer and the second barrier; isotropically etching the contact; isotropically etching the said second insulation layer via the said contact and forms the trench between the said first and second barriers; forms the first conductive layer; anisotropically etching the lower conductive layer for the said capacitors; isotropically etching out the said first and second barrier; forms the dielectric layer on the surface of lower conductive layer; and form the second conductive layer on the said dielectric layer to be used as the upper conductive layer for the said capacitors.
TW084101619A1995-02-221995-02-22Manufacturing method of capacitors used for memory cells of DRAM
TW363269B
(en)