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TW358981B - Method and apparatus for controlling flatness of polished semiconductor wafer - Google Patents

Method and apparatus for controlling flatness of polished semiconductor wafer

Info

Publication number
TW358981B
TW358981B TW086111433A TW86111433A TW358981B TW 358981 B TW358981 B TW 358981B TW 086111433 A TW086111433 A TW 086111433A TW 86111433 A TW86111433 A TW 86111433A TW 358981 B TW358981 B TW 358981B
Authority
TW
Taiwan
Prior art keywords
flatness
polishing
polishing wafer
wafer
semiconductor wafer
Prior art date
Application number
TW086111433A
Other languages
English (en)
Inventor
Ankur H Desai
Troy W Adcock
Michael S Wisnieski
Harlod E Hall Jr
Original Assignee
Memc Electronic Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memc Electronic Materials filed Critical Memc Electronic Materials
Application granted granted Critical
Publication of TW358981B publication Critical patent/TW358981B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G01B11/306—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces for measuring evenness
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Length Measuring Devices By Optical Means (AREA)
TW086111433A 1996-08-09 1997-08-09 Method and apparatus for controlling flatness of polished semiconductor wafer TW358981B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/689,432 US5787595A (en) 1996-08-09 1996-08-09 Method and apparatus for controlling flatness of polished semiconductor wafer

Publications (1)

Publication Number Publication Date
TW358981B true TW358981B (en) 1999-05-21

Family

ID=24768441

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086111433A TW358981B (en) 1996-08-09 1997-08-09 Method and apparatus for controlling flatness of polished semiconductor wafer

Country Status (9)

Country Link
US (1) US5787595A (zh)
EP (2) EP0823309B1 (zh)
JP (1) JPH10132538A (zh)
KR (1) KR19980018533A (zh)
CN (1) CN1190791A (zh)
DE (1) DE69711994T2 (zh)
MY (1) MY133768A (zh)
SG (1) SG88734A1 (zh)
TW (1) TW358981B (zh)

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JPH10329011A (ja) 1997-03-21 1998-12-15 Canon Inc 精密研磨装置及び方法
US5934974A (en) * 1997-11-05 1999-08-10 Aplex Group In-situ monitoring of polishing pad wear
TW466153B (en) * 1999-06-22 2001-12-01 Applied Materials Inc Method and apparatus for measuring a pad profile and closed loop control of a pad conditioning process
WO2001032360A1 (en) * 1999-11-01 2001-05-10 Speedfam-Ipec Corporation Closed-loop ultrasonic conditioning control for polishing pads
DE10009656B4 (de) * 2000-02-24 2005-12-08 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
US6616513B1 (en) 2000-04-07 2003-09-09 Applied Materials, Inc. Grid relief in CMP polishing pad to accurately measure pad wear, pad profile and pad wear profile
EP1270148A1 (en) 2001-06-22 2003-01-02 Infineon Technologies SC300 GmbH & Co. KG Arrangement and method for conditioning a polishing pad
JP4848770B2 (ja) * 2004-01-28 2011-12-28 株式会社ニコン 研磨パッド表面形状測定装置、研磨パッド表面形状測定装置の使用方法、研磨パッドの円錐頂角の測定方法、研磨パッドの溝深さ測定方法、ｃｍｐ研磨装置、及び半導体デバイスの製造方法
KR100671488B1 (ko) 2004-12-13 2007-01-19 주식회사 실트론 연마패드 드레싱 장치 및 그 방법
KR100721755B1 (ko) * 2006-06-08 2007-05-25 두산디앤디 주식회사 웨이퍼 표면연마장비의 웨이퍼 이탈 감지장치
TWI421933B (zh) * 2007-05-16 2014-01-01 Lam Res Corp 板狀物件之超音波濕式處理的裝置與方法
US20120270474A1 (en) * 2011-04-20 2012-10-25 Nanya Technology Corporation Polishing pad wear detecting apparatus
CN104457680B (zh) * 2014-12-17 2017-02-01 广州科升测控设备有限公司 平整度检测系统及方法
KR101759875B1 (ko) * 2015-06-24 2017-07-20 주식회사 엘지실트론 웨이퍼 연마장치의 스캔장치 및 스캔시스템
CN107826267B (zh) * 2017-10-27 2020-04-28 宝鸡欧亚化工设备制造厂 钛合金旋翼机驾驶舱支撑架的加工及检测方法
CN107588725B (zh) * 2017-10-27 2020-04-28 宝鸡欧亚化工设备制造厂 钛合金旋翼机机架龙骨的加工及检测方法
US11359906B2 (en) * 2020-05-29 2022-06-14 Ta Liang Technology Co., Ltd. Method, system and apparatus for uniformed surface measurement
CN114234860A (zh) * 2021-11-25 2022-03-25 江苏弘硕电力设备有限公司 一种高精度配电箱生产用表面平整度检测装置
CN113970750A (zh) * 2021-12-23 2022-01-25 华芯半导体研究院(北京)有限公司 一种测量装置及手套箱
CN114274003B (zh) * 2022-01-06 2022-11-25 海安县巨力磁材有限责任公司 一种磁环表面毛刺打磨装置及加工方法
CN115979145A (zh) * 2022-12-23 2023-04-18 富联科技(兰考)有限公司 测量玻璃工件表面移除量的方法及测量装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4422764A (en) * 1980-12-12 1983-12-27 The University Of Rochester Interferometer apparatus for microtopography
US4720938A (en) * 1986-07-31 1988-01-26 General Signal Corp. Dressing fixture
US5189806A (en) * 1988-12-19 1993-03-02 Renishaw Plc Method of and apparatus for scanning the surface of a workpiece
JPH03142305A (ja) * 1989-10-30 1991-06-18 Kawasaki Steel Corp 表面粗度測定装置
DE3936463A1 (de) * 1989-11-02 1991-05-08 Zeiss Carl Fa Koordinatenmessgeraet
US5081051A (en) * 1990-09-12 1992-01-14 Intel Corporation Method for conditioning the surface of a polishing pad
US5154021A (en) * 1991-06-26 1992-10-13 International Business Machines Corporation Pneumatic pad conditioner
US5231767A (en) * 1991-10-22 1993-08-03 Anthony Industries, Inc. Warp sensing apparatus
US5338932A (en) * 1993-01-04 1994-08-16 Motorola, Inc. Method and apparatus for measuring the topography of a semiconductor device
JP2622069B2 (ja) * 1993-06-30 1997-06-18 三菱マテリアル株式会社 研磨布のドレッシング装置
US5456627A (en) * 1993-12-20 1995-10-10 Westech Systems, Inc. Conditioner for a polishing pad and method therefor
JPH0861949A (ja) * 1994-08-24 1996-03-08 Speedfam Co Ltd 定盤及び研磨パッドの表面形状測定装置
US5483568A (en) * 1994-11-03 1996-01-09 Kabushiki Kaisha Toshiba Pad condition and polishing rate monitor using fluorescence
US5617645A (en) * 1995-05-02 1997-04-08 William R. W. Wick Non-contact precision measurement system
US5609718A (en) * 1995-09-29 1997-03-11 Micron Technology, Inc. Method and apparatus for measuring a change in the thickness of polishing pads used in chemical-mechanical planarization of semiconductor wafers
US5875559A (en) * 1995-10-27 1999-03-02 Applied Materials, Inc. Apparatus for measuring the profile of a polishing pad in a chemical mechanical polishing system
US5618447A (en) * 1996-02-13 1997-04-08 Micron Technology, Inc. Polishing pad counter meter and method for real-time control of the polishing rate in chemical-mechanical polishing of semiconductor wafers

Also Published As

Publication number Publication date
DE69711994T2 (de) 2003-01-23
EP1060835A3 (en) 2001-12-19
EP1060835A2 (en) 2000-12-20
KR19980018533A (ko) 1998-06-05
JPH10132538A (ja) 1998-05-22
CN1190791A (zh) 1998-08-19
US5787595A (en) 1998-08-04
EP0823309A1 (en) 1998-02-11
DE69711994D1 (de) 2002-05-23
MY133768A (en) 2007-11-30
SG88734A1 (en) 2002-05-21
EP0823309B1 (en) 2002-04-17

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