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TW357454B - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
TW357454B
TW357454B TW083110449A TW83110449A TW357454B TW 357454 B TW357454 B TW 357454B TW 083110449 A TW083110449 A TW 083110449A TW 83110449 A TW83110449 A TW 83110449A TW 357454 B TW357454 B TW 357454B
Authority
TW
Taiwan
Prior art keywords
conductor layer
memory cells
main face
parallel
wordlines
Prior art date
Application number
TW083110449A
Other languages
English (en)
Inventor
Takahisa Eimori
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW357454B publication Critical patent/TW357454B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/482—Bit lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/488—Word lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
TW083110449A 1994-09-20 1994-11-11 Semiconductor memory device TW357454B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6224996A JPH0888335A (ja) 1994-09-20 1994-09-20 半導体記憶装置

Publications (1)

Publication Number Publication Date
TW357454B true TW357454B (en) 1999-05-01

Family

ID=16822459

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083110449A TW357454B (en) 1994-09-20 1994-11-11 Semiconductor memory device

Country Status (4)

Country Link
US (1) US5610418A (zh)
JP (1) JPH0888335A (zh)
KR (1) KR100193222B1 (zh)
TW (1) TW357454B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5917211A (en) * 1988-09-19 1999-06-29 Hitachi, Ltd. Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same
JP3241106B2 (ja) * 1992-07-17 2001-12-25 株式会社東芝 ダイナミック型半導体記憶装置及びその製造方法
JPH0936325A (ja) * 1995-07-25 1997-02-07 Hitachi Ltd 半導体集積回路装置
US6967369B1 (en) 1995-09-20 2005-11-22 Micron Technology, Inc. Semiconductor memory circuitry
US7705383B2 (en) * 1995-09-20 2010-04-27 Micron Technology, Inc. Integrated circuitry for semiconductor memory
KR100576466B1 (ko) * 1998-12-30 2006-08-10 주식회사 하이닉스반도체 반도체소자
JP5057616B2 (ja) * 2001-06-29 2012-10-24 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9343467B2 (en) * 2014-08-28 2016-05-17 Kabushiki Kaisha Toshiba Semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5235199A (en) * 1988-03-25 1993-08-10 Kabushiki Kaisha Toshiba Semiconductor memory with pad electrode and bit line under stacked capacitor
JPH0294471A (ja) * 1988-09-30 1990-04-05 Toshiba Corp 半導体記憶装置およびその製造方法
JP3511267B2 (ja) * 1991-07-22 2004-03-29 シャープ株式会社 半導体ｄｒａｍ素子
JPH05218349A (ja) * 1992-02-04 1993-08-27 Sony Corp 半導体記憶装置
JP2908146B2 (ja) * 1992-10-01 1999-06-21 広島日本電気株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
US5610418A (en) 1997-03-11
JPH0888335A (ja) 1996-04-02
KR960012507A (ko) 1996-04-20
KR100193222B1 (ko) 1999-06-15

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees