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TW349132B - Surface cleaning method of II-VI Group compound semiconductor crystal - Google Patents

Surface cleaning method of II-VI Group compound semiconductor crystal

Info

Publication number
TW349132B
TW349132B TW086109603A TW86109603A TW349132B TW 349132 B TW349132 B TW 349132B TW 086109603 A TW086109603 A TW 086109603A TW 86109603 A TW86109603 A TW 86109603A TW 349132 B TW349132 B TW 349132B
Authority
TW
Taiwan
Prior art keywords
compound semiconductor
semiconductor crystal
group compound
cleaning method
surface cleaning
Prior art date
Application number
TW086109603A
Other languages
Chinese (zh)
Inventor
Hideyuki Doi
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Application granted granted Critical
Publication of TW349132B publication Critical patent/TW349132B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

A surface cleaning method of II-VI Group compound semiconductor crystal, which is characterized in using an etching agent prepared by saturating an aqueous solution consisting of sulfuric acid and water at a volume ratio of 1~10 to 1 with potassium dichromate, and etching a II-VI Group compound semiconductor crystal in a temperature range of 10~80 DEG C.
TW086109603A 1996-08-30 1997-07-08 Surface cleaning method of II-VI Group compound semiconductor crystal TW349132B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23030496 1996-08-30

Publications (1)

Publication Number Publication Date
TW349132B true TW349132B (en) 1999-01-01

Family

ID=49516050

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086109603A TW349132B (en) 1996-08-30 1997-07-08 Surface cleaning method of II-VI Group compound semiconductor crystal

Country Status (2)

Country Link
KR (1) KR100415366B1 (en)
TW (1) TW349132B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1727189A2 (en) 1999-12-27 2006-11-29 Matsushita Electric Industrial Co., Ltd. Method for producing a semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948799B2 (en) * 1982-07-17 1984-11-28 財団法人 半導体研究振興会 ZnSe crystal treatment method
JPH02137800A (en) * 1988-11-15 1990-05-28 Nippon Sheet Glass Co Ltd Etching solution of znse single crystal
JP3080721B2 (en) * 1991-10-14 2000-08-28 株式会社東芝 Semiconductor crystal processing method
US5818072A (en) * 1992-05-12 1998-10-06 North Carolina State University Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same
JPH07307528A (en) * 1994-05-12 1995-11-21 Sumitomo Electric Ind Ltd Method for manufacturing blue semiconductor light emitting device

Also Published As

Publication number Publication date
KR19980019152A (en) 1998-06-05
KR100415366B1 (en) 2004-04-21

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