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TW338106B - Semiconductor memory testing apparatus - Google Patents

Semiconductor memory testing apparatus

Info

Publication number
TW338106B
TW338106B TW086104214A TW86104214A TW338106B TW 338106 B TW338106 B TW 338106B TW 086104214 A TW086104214 A TW 086104214A TW 86104214 A TW86104214 A TW 86104214A TW 338106 B TW338106 B TW 338106B
Authority
TW
Taiwan
Prior art keywords
drams
association
buffer memories
semiconductor memory
failure
Prior art date
Application number
TW086104214A
Other languages
Chinese (zh)
Inventor
Shinya Sato
Original Assignee
Adoban Test Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8104384A external-priority patent/JPH09269358A/en
Priority claimed from JP8135206A external-priority patent/JPH09320294A/en
Priority claimed from JP13520596A external-priority patent/JP3631557B2/en
Application filed by Adoban Test Kk filed Critical Adoban Test Kk
Application granted granted Critical
Publication of TW338106B publication Critical patent/TW338106B/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/3181—Functional testing
    • G01R31/319—Tester hardware, i.e. output processing circuits
    • G01R31/3193—Tester hardware, i.e. output processing circuits with comparison between actual response and known fault free response
    • G01R31/31935—Storing data, e.g. failure memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/10—Test algorithms, e.g. memory scan [MScan] algorithms; Test patterns, e.g. checkerboard patterns 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44—Indication or identification of errors, e.g. for repair

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Dram (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

A semiconductor memory test unit for testing semiconductors comprising a plurality of interleaved DRAMs; buffer memories in association with the DRAMs respectively for temporary saving of the failure data and addresses; saving controllers in association with the DRAMs to save the failure addresses input corresponding to the failure address of the DRAMs into the buffer memories corresponding to the buffer memories in association with the DRAMs; and write controllers in association with the DRAMs respectively for reading the failure data from the buffer memories and writing the failure data into the DRAMs in a high-speed write mode.
TW086104214A 1996-03-29 1997-03-28 Semiconductor memory testing apparatus TW338106B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP8104384A JPH09269358A (en) 1996-03-29 1996-03-29 Testing apparatus for semiconductor memory
JP8135206A JPH09320294A (en) 1996-05-29 1996-05-29 Test device for semiconductor memory
JP13520596A JP3631557B2 (en) 1996-05-29 1996-05-29 Semiconductor memory test equipment

Publications (1)

Publication Number Publication Date
TW338106B true TW338106B (en) 1998-08-11

Family

ID=27310215

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086104214A TW338106B (en) 1996-03-29 1997-03-28 Semiconductor memory testing apparatus

Country Status (4)

Country Link
US (1) US5790559A (en)
KR (1) KR100246250B1 (en)
DE (1) DE19713421A1 (en)
TW (1) TW338106B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI682184B (en) * 2014-04-30 2020-01-11 美商是德科技股份有限公司 Multi-bank digital stimulus response in a single field programmable gate array

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JP3552184B2 (en) * 1996-10-18 2004-08-11 株式会社アドバンテスト Semiconductor memory test equipment
JP3871384B2 (en) * 1996-11-01 2007-01-24 株式会社アドバンテスト Defect analysis memory for semiconductor memory test equipment
GB9805054D0 (en) * 1998-03-11 1998-05-06 Process Intelligence Limited Memory test system with buffer memory
JP2000030491A (en) * 1998-07-15 2000-01-28 Advantest Corp Failure analysis memory
JP4121634B2 (en) * 1998-09-21 2008-07-23 株式会社アドバンテスト Memory test equipment
US6442724B1 (en) 1999-04-02 2002-08-27 Teradyne, Inc. Failure capture apparatus and method for automatic test equipment
DE19922786B4 (en) * 1999-05-18 2006-06-08 Infineon Technologies Ag Semiconductor memory with test device
US6671845B1 (en) * 1999-10-19 2003-12-30 Schlumberger Technologies, Inc. Packet-based device test system
US6536005B1 (en) * 1999-10-26 2003-03-18 Teradyne, Inc. High-speed failure capture apparatus and method for automatic test equipment
US6320812B1 (en) * 2000-09-20 2001-11-20 Agilent Technologies, Inc. Error catch RAM for memory tester has SDRAM memory sets configurable for size and speed
US6851076B1 (en) * 2000-09-28 2005-02-01 Agilent Technologies, Inc. Memory tester has memory sets configurable for use as error catch RAM, Tag RAM's, buffer memories and stimulus log RAM
JP3888631B2 (en) * 2000-11-02 2007-03-07 株式会社ルネサステクノロジ Semiconductor memory, semiconductor memory inspection method, and manufacturing method
US7076706B2 (en) * 2001-04-24 2006-07-11 International Business Machines Corporation Method and apparatus for ABIST diagnostics
US6961880B2 (en) * 2001-07-30 2005-11-01 Infineon Technologies Ag Recording test information to identify memory cell errors
KR100883735B1 (en) * 2002-11-15 2009-02-13 가부시키가이샤 어드밴티스트 Semiconductor memory test device and address generator for fault analysis
JP4130811B2 (en) * 2004-03-24 2008-08-06 株式会社アドバンテスト Test apparatus and test method
US7099221B2 (en) * 2004-05-06 2006-08-29 Micron Technology, Inc. Memory controller method and system compensating for memory cell data losses
US7219275B2 (en) * 2005-02-08 2007-05-15 International Business Machines Corporation Method and apparatus for providing flexible modular redundancy allocation for memory built in self test of SRAM with redundancy
US7380191B2 (en) * 2005-02-09 2008-05-27 International Business Machines Corporation ABIST data compression and serialization for memory built-in self test of SRAM with redundancy
US20080077835A1 (en) * 2006-09-27 2008-03-27 Khoche A Jay Automatic Test Equipment Receiving Diagnostic Information from Devices with Built-in Self Test
US20080077834A1 (en) * 2006-09-27 2008-03-27 Ajay Khoche Deterministic Diagnostic Information Capture from Memory Devices with Built-in Self Test
US7900120B2 (en) 2006-10-18 2011-03-01 Micron Technology, Inc. Memory system and method using ECC with flag bit to identify modified data
US8977912B2 (en) * 2007-05-07 2015-03-10 Macronix International Co., Ltd. Method and apparatus for repairing memory
KR100926149B1 (en) * 2008-01-23 2009-11-10 주식회사 아이티엔티 Fail Data Processing Method in Semiconductor Memory Test System
KR101203412B1 (en) * 2008-07-28 2012-11-21 가부시키가이샤 어드밴티스트 Testing device, and testing method
JP2013250690A (en) * 2012-05-31 2013-12-12 Renesas Electronics Corp Data processor, microcontroller, and self-diagnosis method of data processor
US10719477B1 (en) * 2019-06-20 2020-07-21 Semiconductor Components Industries, Llc Methods and system for an integrated circuit
KR20230030436A (en) * 2021-08-25 2023-03-06 삼성전자주식회사 Monitoring circuit, integrated circuit comprising the same, and method of operation of the monitoring circuit

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JPS61145799A (en) * 1984-12-20 1986-07-03 Fujitsu Ltd Semiconductor integrated circuit with built-in memory
KR920001079B1 (en) * 1989-06-10 1992-02-01 삼성전자 주식회사 Test method of memory device with built-in serial data path
JPH03162800A (en) * 1989-08-29 1991-07-12 Mitsubishi Electric Corp Semiconductor memory device
JPH0419899A (en) * 1990-05-11 1992-01-23 Mitsubishi Electric Corp Test device for semiconductor memory
DD297731A5 (en) * 1990-09-24 1992-01-16 Zentrum Mikroelektronik Dresden Gmbh,De METHOD AND CIRCUIT FOR TESTING SAVINGS WITH OPTIONAL ACCESS
DE4130572A1 (en) * 1990-09-25 1992-03-26 Mikroelektronik Und Technologi Testing read-write memories - using shift register test signal generator for cyclic inputs
JP2866750B2 (en) * 1991-01-28 1999-03-08 三菱電機株式会社 Semiconductor test apparatus and semiconductor device test method
US5446695A (en) * 1994-03-22 1995-08-29 International Business Machines Corporation Memory device with programmable self-refreshing and testing methods therefore

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI682184B (en) * 2014-04-30 2020-01-11 美商是德科技股份有限公司 Multi-bank digital stimulus response in a single field programmable gate array

Also Published As

Publication number Publication date
KR100246250B1 (en) 2000-03-15
KR970066574A (en) 1997-10-13
US5790559A (en) 1998-08-04
DE19713421A1 (en) 1997-10-30

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees