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Application filed by Taiwan Semiconductor Mfg Co LtdfiledCriticalTaiwan Semiconductor Mfg Co Ltd
Priority to TW086106233ApriorityCriticalpatent/TW335534B/en
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Publication of TW335534BpublicationCriticalpatent/TW335534B/en
Internal Circuitry In Semiconductor Integrated Circuit Devices
(AREA)
Insulated Gate Type Field-Effect Transistor
(AREA)
Abstract
To form a trench beside the first type well and form a gate dielectric around the trench. There is a gate dielectric exists between the shallow trench insulation and first type will. It will not etched in the following processes because of gate protection. Therefore, the short circuit of first type well is prevented even have the misalignment of gate-to-active and contact-to-active.
TW086106233A1997-05-101997-05-10The process method and structure of semiconductor butt-contact
TW335534B
(en)