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TW289860B - Process for bottom plate of DRAM stacked capacitor - Google Patents

Process for bottom plate of DRAM stacked capacitor

Info

Publication number
TW289860B
TW289860B TW85100035A TW85100035A TW289860B TW 289860 B TW289860 B TW 289860B TW 85100035 A TW85100035 A TW 85100035A TW 85100035 A TW85100035 A TW 85100035A TW 289860 B TW289860 B TW 289860B
Authority
TW
Taiwan
Prior art keywords
polysilicon
bottom plate
stacked capacitor
doped
dram stacked
Prior art date
Application number
TW85100035A
Other languages
Chinese (zh)
Inventor
Huanq-Jong Jeng
Hwan-Pyng Su
Hann-Wenn Liou
Original Assignee
Nat Science Council
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Science Council filed Critical Nat Science Council
Priority to TW85100035A priority Critical patent/TW289860B/en
Application granted granted Critical
Publication of TW289860B publication Critical patent/TW289860B/en

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  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

A process for bottom plate of DRAM stacked capacitor, in which the stacked capacitor is formed on one silicon substrate and in sequence has one SiO2 layer, one bottom silicon plate consisting of polysilicon, one dielectric layer and one top plate, comprises the steps of: (1) depositing one first polysilicon on the SiO2 layer; (2) doping the first polysilicon; (3) activating the doped first polysilicon; (4) depositing one second polysilicon on the activated and doped first polysilicon; (5) doping the second polysilicon; (6) activating the doped second polysilicon; (7) with phosphoric acid etching the activated and doped second polysilicon, therefore forming one bottom plate consisting of polysilicon with rugged surface.
TW85100035A 1996-01-04 1996-01-04 Process for bottom plate of DRAM stacked capacitor TW289860B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW85100035A TW289860B (en) 1996-01-04 1996-01-04 Process for bottom plate of DRAM stacked capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW85100035A TW289860B (en) 1996-01-04 1996-01-04 Process for bottom plate of DRAM stacked capacitor

Publications (1)

Publication Number Publication Date
TW289860B true TW289860B (en) 1996-11-01

Family

ID=51398214

Family Applications (1)

Application Number Title Priority Date Filing Date
TW85100035A TW289860B (en) 1996-01-04 1996-01-04 Process for bottom plate of DRAM stacked capacitor

Country Status (1)

Country Link
TW (1) TW289860B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8136976B2 (en) 2009-02-06 2012-03-20 Au Optronics Corp. Light guiding structure of a light guide plate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8136976B2 (en) 2009-02-06 2012-03-20 Au Optronics Corp. Light guiding structure of a light guide plate

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