[go: up one dir, main page]

TW289828B - Programming switch for non-volatile memory integrated circuit - Google Patents

Programming switch for non-volatile memory integrated circuit

Info

Publication number
TW289828B
TW289828B TW85103391A TW85103391A TW289828B TW 289828 B TW289828 B TW 289828B TW 85103391 A TW85103391 A TW 85103391A TW 85103391 A TW85103391 A TW 85103391A TW 289828 B TW289828 B TW 289828B
Authority
TW
Taiwan
Prior art keywords
node
logical
voltage
drain
nmos transistor
Prior art date
Application number
TW85103391A
Other languages
Chinese (zh)
Inventor
Yih-Bin Lin
Deng-Tsair Lin
Original Assignee
Myson Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Myson Technology Inc filed Critical Myson Technology Inc
Priority to TW85103391A priority Critical patent/TW289828B/en
Application granted granted Critical
Publication of TW289828B publication Critical patent/TW289828B/en

Links

Landscapes

  • Read Only Memory (AREA)

Abstract

A programming switch for non-volatile memory integrated circuit mainly comprises of: (1) one programming voltage Vpp generated inside circuit by itself, and with typical value between 15 volt to 20 volt; (2) one supplied power Vcc which is external power; (3) one input end whose voltage Vin with two different values, logical "1" and logical "0"; (4) one output end with voltage Vout; (5) two mutually inverse clock signal CK and CKB, which functions only when input voltage is logical "1"; (6) one first node and one second node; (7) one first enhanced NMOS transistor whose gate is connected to the second node, drain and source connecting between the programming voltage Vpp and the first node; (8) one second enhanced NMOS transistor for connecting to diode, whose gate is connected to the first node, drain and source connecting between the first node and the second node; (9) one third enhanced NMOS transistor for connecting to diode, whose gate is connected to the second node, drain and source connecting between the second node and the output end; (10) one fourth enhanced NMOS transistor for connecting to diode, whose gate is connected to the supplied power Vcc, drain and source connecting between the input end and the output end; (11) one capacitor couples, in which one end of first capacitor is connected to the clock signal CK, the other end connected to the first node, one end of second capacitor is connected to the clock signal CKB, the other end connected to the second node; (12) making the relationship between the output end voltage Vout and the input end voltage Vin become that when Vin is logical "0", Vout is also logical "0", when Vin is logical "1", Vout is about Vpp or logical "1".
TW85103391A 1996-03-21 1996-03-21 Programming switch for non-volatile memory integrated circuit TW289828B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW85103391A TW289828B (en) 1996-03-21 1996-03-21 Programming switch for non-volatile memory integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW85103391A TW289828B (en) 1996-03-21 1996-03-21 Programming switch for non-volatile memory integrated circuit

Publications (1)

Publication Number Publication Date
TW289828B true TW289828B (en) 1996-11-01

Family

ID=51398200

Family Applications (1)

Application Number Title Priority Date Filing Date
TW85103391A TW289828B (en) 1996-03-21 1996-03-21 Programming switch for non-volatile memory integrated circuit

Country Status (1)

Country Link
TW (1) TW289828B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111192606A (en) * 2018-11-14 2020-05-22 爱思开海力士有限公司 Power supply door control system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111192606A (en) * 2018-11-14 2020-05-22 爱思开海力士有限公司 Power supply door control system
CN111192606B (en) * 2018-11-14 2023-08-25 爱思开海力士有限公司 Power Gating System

Similar Documents

Publication Publication Date Title
US4970409A (en) Voltage multiplier for nonvolatile semiconductor memory
US5872476A (en) Level converter circuit generating a plurality of positive/negative voltages
DE69232807D1 (en) Flash memory with better erasability and its switching
JPH08162915A (en) Semiconductor integrated circuit
JPS62203416A (en) Power-on resetting circuit for logic circuit of mos technology especially for peripheries of microprocessor
KR850008564A (en) Semiconductor integrated circuit device
US4638182A (en) High-level CMOS driver circuit
KR920017116A (en) Current sense amplifier circuit
KR900002558A (en) Output circuit
US6066973A (en) Semiconductor integrated circuit having input circuit
DE59206670D1 (en) CMOS buffer circuit
TW289828B (en) Programming switch for non-volatile memory integrated circuit
KR890004495A (en) Reset signal generation circuit
KR920010907A (en) Free charge circuit
KR930011274A (en) Input circuit
KR960019978A (en) Pulse generator
KR920001841A (en) Power-On Reset Circuit
KR960002331B1 (en) Inverter circuit for oscillator of dram
KR0179902B1 (en) Output driving circuit of CMOS transistor
KR100243263B1 (en) Schmitt trigger circuit for RC oscillator
JPS6025323A (en) semiconductor integrated circuit
KR970051095A (en) Charge Pump Circuit
JP2864559B2 (en) BiCMOS logic circuit
KR0152352B1 (en) Logic level shifter
KR950020695A (en) High potential transfer circuit

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent