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TW253993B - - Google Patents

Info

Publication number
TW253993B
TW253993B TW083109689A TW83109689A TW253993B TW 253993 B TW253993 B TW 253993B TW 083109689 A TW083109689 A TW 083109689A TW 83109689 A TW83109689 A TW 83109689A TW 253993 B TW253993 B TW 253993B
Authority
TW
Taiwan
Application number
TW083109689A
Original Assignee
Vlsi Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vlsi Technology Inc filed Critical Vlsi Technology Inc
Application granted granted Critical
Publication of TW253993B publication Critical patent/TW253993B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
TW083109689A 1993-09-24 1994-10-19 TW253993B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/126,624 US5391518A (en) 1993-09-24 1993-09-24 Method of making a field programmable read only memory (ROM) cell using an amorphous silicon fuse with buried contact polysilicon and metal electrodes

Publications (1)

Publication Number Publication Date
TW253993B true TW253993B (zh) 1995-08-11

Family

ID=22425859

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083109689A TW253993B (zh) 1993-09-24 1994-10-19

Country Status (4)

Country Link
US (1) US5391518A (zh)
IL (1) IL111038A0 (zh)
TW (1) TW253993B (zh)
WO (1) WO1995008845A1 (zh)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
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US5272101A (en) * 1990-04-12 1993-12-21 Actel Corporation Electrically programmable antifuse and fabrication processes
US5552627A (en) * 1990-04-12 1996-09-03 Actel Corporation Electrically programmable antifuse incorporating dielectric and amorphous silicon interlayers
EP0558176A1 (en) * 1992-02-26 1993-09-01 Actel Corporation Metal-to-metal antifuse with improved diffusion barrier layer
US5308795A (en) * 1992-11-04 1994-05-03 Actel Corporation Above via metal-to-metal antifuse
US5369054A (en) * 1993-07-07 1994-11-29 Actel Corporation Circuits for ESD protection of metal-to-metal antifuses during processing
US5581111A (en) * 1993-07-07 1996-12-03 Actel Corporation Dielectric-polysilicon-dielectric antifuse for field programmable logic applications
US5485031A (en) 1993-11-22 1996-01-16 Actel Corporation Antifuse structure suitable for VLSI application
US5670394A (en) * 1994-10-03 1997-09-23 United Technologies Corporation Method of making bipolar transistor having amorphous silicon contact as emitter diffusion source
EP0774164A1 (en) * 1995-06-02 1997-05-21 Actel Corporation Raised tungsten plug antifuse and fabrication process
US5986322A (en) * 1995-06-06 1999-11-16 Mccollum; John L. Reduced leakage antifuse structure
US5741720A (en) * 1995-10-04 1998-04-21 Actel Corporation Method of programming an improved metal-to-metal via-type antifuse
US5909049A (en) 1997-02-11 1999-06-01 Actel Corporation Antifuse programmed PROM cell
US6021079A (en) * 1998-05-13 2000-02-01 Richard Mann Fast, low cost method of developing code for contact programmable ROMs
US6034882A (en) 1998-11-16 2000-03-07 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US6385074B1 (en) 1998-11-16 2002-05-07 Matrix Semiconductor, Inc. Integrated circuit structure including three-dimensional memory array
US6351406B1 (en) 1998-11-16 2002-02-26 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US6483736B2 (en) 1998-11-16 2002-11-19 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
CN1278645A (zh) * 1999-06-22 2001-01-03 张世熹 高密度集成电路之存储器
US6888750B2 (en) * 2000-04-28 2005-05-03 Matrix Semiconductor, Inc. Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication
US6631085B2 (en) * 2000-04-28 2003-10-07 Matrix Semiconductor, Inc. Three-dimensional memory array incorporating serial chain diode stack
US8575719B2 (en) 2000-04-28 2013-11-05 Sandisk 3D Llc Silicon nitride antifuse for use in diode-antifuse memory arrays
US6624011B1 (en) * 2000-08-14 2003-09-23 Matrix Semiconductor, Inc. Thermal processing for three dimensional circuits
CN101179079B (zh) 2000-08-14 2010-11-03 矩阵半导体公司 密集阵列和电荷存储器件及其制造方法
US6580124B1 (en) 2000-08-14 2003-06-17 Matrix Semiconductor Inc. Multigate semiconductor device with vertical channel current and method of fabrication
US6838367B1 (en) 2000-08-24 2005-01-04 Micron Technology, Inc. Method for simultaneous formation of fuse and capacitor plate and resulting structure
US6661730B1 (en) 2000-12-22 2003-12-09 Matrix Semiconductor, Inc. Partial selection of passive element memory cell sub-arrays for write operation
US6627530B2 (en) 2000-12-22 2003-09-30 Matrix Semiconductor, Inc. Patterning three dimensional structures
US6545898B1 (en) 2001-03-21 2003-04-08 Silicon Valley Bank Method and apparatus for writing memory arrays using external source of high programming voltage
US6897514B2 (en) * 2001-03-28 2005-05-24 Matrix Semiconductor, Inc. Two mask floating gate EEPROM and method of making
US6542397B2 (en) 2001-06-25 2003-04-01 Lucent Technologies Inc. Read only memory structure
US6458676B1 (en) 2001-06-25 2002-10-01 Lucent Technologies Inc. Method of varying the resistance along a conductive layer
US6841813B2 (en) * 2001-08-13 2005-01-11 Matrix Semiconductor, Inc. TFT mask ROM and method for making same
US6593624B2 (en) 2001-09-25 2003-07-15 Matrix Semiconductor, Inc. Thin film transistors with vertically offset drain regions
US6525953B1 (en) 2001-08-13 2003-02-25 Matrix Semiconductor, Inc. Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication
US6624485B2 (en) 2001-11-05 2003-09-23 Matrix Semiconductor, Inc. Three-dimensional, mask-programmed read only memory
US6853049B2 (en) 2002-03-13 2005-02-08 Matrix Semiconductor, Inc. Silicide-silicon oxide-semiconductor antifuse device and method of making
US6737675B2 (en) 2002-06-27 2004-05-18 Matrix Semiconductor, Inc. High density 3D rail stack arrays
US20060249753A1 (en) * 2005-05-09 2006-11-09 Matrix Semiconductor, Inc. High-density nonvolatile memory array fabricated at low temperature comprising semiconductor diodes
US7177183B2 (en) 2003-09-30 2007-02-13 Sandisk 3D Llc Multiple twin cell non-volatile memory array and logic block structure and method therefor
KR100621773B1 (ko) * 2005-02-07 2006-09-14 삼성전자주식회사 전기적 퓨즈 회로 및 레이아웃 방법
US20100283053A1 (en) * 2009-05-11 2010-11-11 Sandisk 3D Llc Nonvolatile memory array comprising silicon-based diodes fabricated at low temperature
US9627395B2 (en) 2015-02-11 2017-04-18 Sandisk Technologies Llc Enhanced channel mobility three-dimensional memory structure and method of making thereof
US9478495B1 (en) 2015-10-26 2016-10-25 Sandisk Technologies Llc Three dimensional memory device containing aluminum source contact via structure and method of making thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4569121A (en) * 1983-03-07 1986-02-11 Signetics Corporation Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing deposition of amorphous semiconductor layer
US5989943A (en) * 1989-09-07 1999-11-23 Quicklogic Corporation Method for fabrication of programmable interconnect structure
US5070384A (en) * 1990-04-12 1991-12-03 Actel Corporation Electrically programmable antifuse element incorporating a dielectric and amorphous silicon interlayer
US5106773A (en) * 1990-10-09 1992-04-21 Texas Instruments Incorporated Programmable gate array and methods for its fabrication
US5095362A (en) * 1990-10-23 1992-03-10 Instant Circuit Corporation Method for reducing resistance for programmed antifuse
US5166556A (en) * 1991-01-22 1992-11-24 Myson Technology, Inc. Programmable antifuse structure, process, logic cell and architecture for programmable integrated circuits

Also Published As

Publication number Publication date
IL111038A0 (en) 1994-11-28
US5391518A (en) 1995-02-21
WO1995008845A1 (en) 1995-03-30

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