TW202510160A - Joining device, joining system, and joining method - Google Patents

Abstract

An object of the invention is to provide technology that improves the joining efficiency of dies to a substrate. A joining device of the invention joins a plurality of dies to a substrate. The substrate comprises a plurality of first devices on the joining surface with the dies, and the dies each have a second device on the joining surface with the substrate that connects electrically to the first device. The joining device comprises a carrier holding section which holds a carrier on which the plurality of dies are mounted, a substrate holding section which holds the substrate, a first transport section which receives and transports the dies from the carrier held by the carrier holding section, a second transport section, separate from the first transport section, which receives and transports the dies from the carrier, and a mounting section which receives the dies from the first transport section and the second transport section in a desired sequence and mounts the received dies to the substrate held by the substrate holding section.

Description

Bonding device, bonding system and bonding method

The present invention relates to a bonding device, a bonding system and a bonding method.

The chip mounting system described in Patent Document 1 includes: a chip supply device, a bonding device, a surface treatment device, a loading and unloading unit, and a transport unit (Patent Document 1, paragraph [0225]). The chip supply device supplies a plurality of chips individually. The chips are bonded by a tape covering the opening of the frame, and are pushed upward one by one and turned upside down one by one (Patent Document 1, paragraph [0251]). The bonding device mounts the chips supplied from the chip supply device on the substrate. [Prior Technical Document] [Patent Document]

[Patent Document 1] Japanese Patent No. 6337400

[The problem the invention is trying to solve]

One aspect of the present invention is to provide a technology for improving the bonding efficiency of a bare die to a substrate. [Technical means for solving the problem]

According to one aspect of the present invention, a bonding device is used to bond a plurality of bare crystals to a substrate. The substrate has a plurality of first components on the bonding surface with the bare crystals, and the bare crystal has a second component electrically connected to the first components on the bonding surface with the substrate. The bonding device includes: a carrier holding portion that holds a carrier on which a plurality of the bare crystals are mounted; a substrate holding portion that holds the substrate; a first transport portion that receives and transports the bare crystals from the carrier held by the carrier holding portion; a second transport portion that is different from the first transport portion and receives and transports the bare crystals from the carrier; and an assembly portion that receives the bare crystals from the first transport portion and the second transport portion in a desired order and mounts the received bare crystals on the substrate held by the substrate holding portion. [Effect of the invention]

According to one aspect of the present invention, the bonding efficiency of a bare die to a substrate can be improved.

Hereinafter, the implementation of the present invention will be described with reference to the drawings. In addition, in each drawing, the same symbols are sometimes given to the same or corresponding structures and the description is omitted. In this specification, the X-axis direction, the Y-axis direction, and the Z-axis direction are directions perpendicular to each other. The X-axis direction and the Y-axis direction are horizontal directions, and the Z-axis direction is a vertical direction. The X-axis direction includes: the positive direction of the X-axis; and the negative direction of the X-axis in the opposite direction to the positive direction of the X-axis. The Y-axis direction includes: the positive direction of the Y-axis; and the negative direction of the Y-axis in the opposite direction to the positive direction of the Y-axis. The Z-axis direction includes: the positive direction of the Z-axis; and the negative direction of the Z-axis in the opposite direction to the positive direction of the Z-axis.

In the following, a bonding system 1 according to an embodiment of the present invention is mainly described with reference to FIG. 1 to FIG. 5 . As shown in FIG. 5 , the bonding system 1 bonds a plurality of bare chips D to a substrate W, thereby manufacturing a substrate DW with bare chips attached. The substrate DW with bare chips attached includes: a substrate W; and a plurality of bare chips D bonded to the substrate W.

The substrate W includes: a first base substrate W1; and a plurality of first components W2 formed on the first base substrate W1. The first base substrate W1 is, for example, a silicon wafer, a compound semiconductor wafer or a glass substrate. The first components W2 include: semiconductor components, circuits or terminals, etc. The substrate W has a plurality of first components W2 on the bonding surface Wa with the bare die D.

The bare crystal D includes: a second base substrate D1; and a second component D2 formed on the second base substrate D1. The second base substrate D1 is, for example, a silicon wafer, a compound semiconductor wafer or a glass substrate. The second component D2 includes: a semiconductor component, a circuit or a terminal, etc. The bare crystal D has: a second component D2 electrically connected to the first component W2 of the substrate W at the bonding surface Da with the substrate W.

Although not shown, a second bare die different from the bare die D may be prepared. The second bare die has a third element electrically connected to the first element W2 of the substrate W on the bonding surface with the substrate W. The third element has different functions from the second element D2, that is, has different electronic circuits. The second element D2 and the third element may also be electrically connected to one first element W2.

As shown in FIG1 , the bonding system 1 includes: a loading and unloading station 2, a first processing station 3, a second processing station 5, and a control device 9. The loading and unloading station 2, the first processing station 3, and the second processing station 5 are arranged in this order from the negative direction of the X-axis to the positive direction of the X-axis. In addition, although not shown, a plurality of second processing stations 5 may be provided, and the plurality of second processing stations 5 may also be arranged from the negative direction of the X-axis to the positive direction of the X-axis.

The loading and unloading station 2 includes a loading platform 20. Wafer cassettes C1 to C4 are loaded on the loading platform 20. Wafer cassette C1 stores carrier A with bare die D mounted thereon. Wafer cassette C2 stores carrier A after bare die D is peeled off. Wafer cassette C3 stores substrate W before bonding with bare die D. Wafer cassette C4 stores substrate DW with bare die attached thereto.

As shown in FIG. 3 , the carrier A holds a plurality of bare chips D. The carrier A is, for example, an electrostatic carrier. The electrostatic carrier electrostatically absorbs a plurality of bare chips D. The electrostatic carrier can also electrostatically absorb and vacuum absorb the plurality of bare chips D. Even after the electrostatic absorption force disappears, the vacuum absorption force can continue to hold the plurality of bare chips D.

The carrier A is prepared for each substrate W. In the present embodiment, the carrier A only holds a plurality of bare dies D having the same function, but may also hold the aforementioned plurality of second bare dies in addition to the plurality of bare dies D. One carrier A only needs to hold all bare dies bonded to one substrate W.

The carrier A includes, for example, a conductive substrate A1 and an insulating film A2, and the bare die D is adsorbed on the side opposite to the conductive substrate A1 based on the insulating film A2. The charge supply unit (not shown) applies a voltage to the conductive substrate A1, thereby supplying a charge of a first polarity (e.g., positive) to the conductive substrate A1. In addition, the charge neutralization unit (not shown) removes the charge of the first polarity from the bare die D, thereby leaving a charge of a second polarity (e.g., negative) opposite to the first polarity in the bare die D.

While the charge of the first polarity is stored in the conductive substrate A1, the charge of the second polarity is stored in the bare die D. As a result, a potential difference is generated between the conductive substrate A1 and the bare die D through the insulating film A2, and an electrostatic attraction force is generated. The generated electrostatic attraction force is maintained even after the voltage is applied to the conductive substrate A1 and the electrical neutralization of the bare die D is released.

The conductive substrate A1 is made of, for example, silicon, aluminum, aluminum alloy, stainless steel, or titanium. One or more through holes A3 may be formed on the conductive substrate A1 for each bare die D. By supplying gas to the through holes A3 or inserting a pin (not shown) into the through holes A3, the bare die D can be peeled off from the carrier A. The number and arrangement of the through holes A3 are not particularly limited.

The insulating film A2 limits the charge transfer between the second base substrate D1 of the bare die D and the conductive substrate A1, thereby maintaining the electrostatic adsorption force. The insulating film A2 preferably has a breakdown voltage of more than 30 kV, and more preferably more than 40 kV.

The insulating film A2 is a flexible material, and is preferably made of a material with an elastic coefficient of less than 2 GPa, and more preferably less than 0.5 GPa. When the bare die D is pressed against the insulating film A2 by electrostatic adsorption, a vacuum adsorption force is generated between the bare die D and the insulating film A2.

Even if the electrostatic adsorption force disappears due to the leakage of charges from the conductive substrate A1 or the die D, the plurality of die D can be held continuously by the vacuum adsorption force. The charge leakage may be caused by, for example, the removal of the protective film PF or the supply of a processing liquid to the die D during the modification of the bonding surface Da.

From the viewpoint of durability when the bonding surface Da is improved, the insulating film A2 is made of, for example, polyimide or EVA (ethylene-vinyl acetate copolymer). The thickness of the insulating film A2 is, for example, 10 μm.

The insulating film A2 may also be provided with a through hole A4 connected to the through hole A3 of the conductive substrate A1. The diameter of the through hole A4 of the insulating film A2 is preferably smaller than the diameter of the through hole A3 of the conductive substrate A1. Furthermore, the through hole A4 may not be provided. Even if the through hole A4 is not provided, the insulating film A2 may be partially deformed by supplying gas to the through hole A3 or by inserting a pin into the through hole A3, so that the bare die D may be peeled off from the carrier A.

The carrier A preferably has the same diameter as the substrate W. In this case, the transfer arm for transferring the carrier A and the transfer arm for transferring the substrate W can be of the same model (i.e., the same size and the same shape), which can reduce costs. The first activation device 37 and the second activation device 39, or the first hydrophilization device 38 and the second hydrophilization device 40, can also be of the same model, which can reduce costs. It can also suppress the enlargement of the device.

As shown in FIG1 , the loading and unloading station 2 includes: a third transporting area 21, a third carrier transporting arm 22, and a third substrate transporting arm 23. The third transporting area 21 is adjacent to the mounting table 20. The third transporting area 21 extends in the Y-axis direction. The third carrier transporting arm 22 holds and transports the carrier A in the third transporting area 21. The third substrate transporting arm 23 holds and transports the substrate W in the third transporting area 21.

The loading and unloading station 2 includes a driving unit (not shown) for moving or rotating the third carrier transport arm 22 and the third substrate transport arm 23. The third carrier transport arm 22 and the third substrate transport arm 23 can move in the horizontal direction (both the X-axis direction and the Y-axis direction) and the vertical direction, and can rotate around the vertical axis.

As shown in FIG1 , the third carrier transport arm 22 and the third substrate transport arm 23 can be mounted on the same Y-axis slide and move in the Y-axis direction simultaneously, or mounted on different Y-axis slides and move in the Y-axis direction independently. The third carrier transport arm 22 and the third substrate transport arm 23 are arranged at different heights.

The first processing station 3 includes a first transporting area 31, a first carrier transporting arm 32 and a first substrate transporting arm 33. The first transporting area 31 extends in the X-axis direction. The first carrier transporting arm 32 holds and transports the carrier A in the first transporting area 31. The first substrate transporting arm 33 holds and transports the substrate W in the first transporting area 31.

The first processing station 3 includes a driving unit (not shown) for moving or rotating the first carrier transfer arm 32 and the first substrate transfer arm 33. The first carrier transfer arm 32 and the first substrate transfer arm 33 can move in the horizontal direction (both the X-axis direction and the Y-axis direction) and the vertical direction, and can rotate around the vertical axis.

As shown in FIG1 , the first carrier transport arm 32 and the first substrate transport arm 33 can be mounted on the same X-axis slide and move in the X-axis direction simultaneously, or can be mounted on different X-axis slides and move in the X-axis direction independently. The first carrier transport arm 32 and the first substrate transport arm 33 are arranged at different heights.

The first processing station 3 includes a third transfer device 34, a fourth transfer device 35, a cleaning device 36, a first activation device 37, a first hydrophilization device 38, a second activation device 39, a second hydrophilization device 40, an inspection device 41, a stripping device 42, and an annealing device 43. The third transfer device 34, the fourth transfer device 35, the cleaning device 36, the first activation device 37, the first hydrophilization device 38, the second activation device 39, the second hydrophilization device 40, the inspection device 41, the stripping device 42, and the annealing device 43 are adjacent to the first transport area 31.

The third transfer device 34 is disposed between the third transfer area 21 and the first transfer area 31 and temporarily stores the carrier A. The third transfer device 34 relays the carrier A between the third carrier transfer arm 22 and the first carrier transfer arm 32. The relayed carrier A may be loaded with a bare die D or may be stripped of the bare die D.

The fourth transfer device 35 is disposed between the third transfer area 21 and the first transfer area 31, and temporarily stores the substrate W. The fourth transfer device 35 relays the substrate W between the third substrate transfer arm 23 and the first substrate transfer arm 33. The relayed substrate W may be before or after the bare die D is bonded (i.e., the substrate DW with the bare die attached).

The cleaning device 36 removes the protective film PF from the bare crystal D while the bare crystal D is held by the carrier A. The protective film PF protects the bonding surface Da of the bare crystal D during cutting, for example. When the protective film PF is water-soluble, the cleaning device 36 supplies pure water to the protective film PF. The cleaning device 36 can also further clean the bonding surface Da of the bare crystal D after removing the protective film PF from the bare crystal D. The quality of the subsequent processing of the bonding surface Da of the bare crystal D can be improved.

The first activation device 37 activates the bonding surface Da of the bare crystal D while the bare crystal D is held by the carrier A. The first activation device 37 is, for example, a plasma processing device. In the first activation device 37, oxygen as a processing gas is excited under reduced pressure, for example, to be plasmatized and ionized. The bonding surface Da of the bare crystal D is activated by irradiating oxygen ions to the bonding surface Da of the bare crystal D. The processing gas is not limited to oxygen, and may also be nitrogen, for example.

The first hydrophilization device 38 hydrophilizes the bonding surface Da of the bare die D while the bare die D is held by the carrier A. For example, the first hydrophilization device 38 supplies pure water (e.g., deionized water) onto the bare die D while rotating the carrier A held by the rotating chuck. The pure water imparts OH groups to the bonding surface Da of the pre-activated bare die D. The bare die D and the substrate W can be bonded by hydrogen bonds between the OH groups.

The second activation device 39 activates the bonding surface Wa of the substrate W. The second activation device 39 is, for example, a plasma processing device. In the second activation device 39, for example, oxygen as a processing gas is excited under reduced pressure to be plasmatized and ionized. By irradiating the bonding surface Wa of the substrate W with oxygen ions, the bonding surface Wa of the substrate W is activated. The processing gas is not limited to oxygen, and may be, for example, nitrogen.

The second hydrophilization device 40 hydrophilizes the bonding surface Wa of the substrate W. For example, the second hydrophilization device 40 rotates the substrate W held by the rotary chuck while supplying pure water (e.g., deionized water) onto the substrate W. The pure water imparts OH groups to the bonding surface Wa of the pre-activated substrate W. The bare die D and the substrate W can be bonded by hydrogen bonds between the OH groups.

The inspection device 41 inspects whether the bonding state between the substrate W and the bare die D is good or bad in the substrate DW with the bare die attached. The inspection is performed on each bare die D. The inspection items include at least one of the presence of foreign matter such as bubbles and the presence of positional deviation.

The peeling device 42 peels the bare die D whose bonding state is defective during the inspection by the inspection device 41 from the substrate W. The peeling of the bare die D by the peeling device 42 is performed before the heat treatment of the substrate DW with the bare die by the annealing device 43.

The annealing device 43 heats the substrate DW with the bare die attached. Before the heat treatment, the bare die D and the substrate W are bonded by the hydrogen bonds of the OH groups. The heat treatment generates a dehydration condensation reaction, generates a covalent bond, and improves the bonding strength between the bare die D and the substrate W.

The second processing station 5 includes a second transport area 51, a second carrier transport arm 52 and a second substrate transport arm 53. The second transport area 51 extends in the X-axis direction. The second carrier transport arm 52 holds and transports the carrier A in the second transport area 51. The second substrate transport arm 53 holds and transports the substrate W in the second transport area 51.

The second processing station 5 includes a driving unit (not shown) for moving or rotating the second carrier transfer arm 52 and the second substrate transfer arm 53. The second carrier transfer arm 52 and the second substrate transfer arm 53 can move in the horizontal direction (both the X-axis direction and the Y-axis direction) and the vertical direction, and can rotate around the vertical axis.

As shown in FIG1 , the second carrier transport arm 52 and the second substrate transport arm 53 can be mounted on the same X-axis slide and move in the X-axis direction simultaneously, or can be mounted on different X-axis slides and move in the X-axis direction independently. The second carrier transport arm 52 and the second substrate transport arm 53 are arranged at different heights.

The second processing station 5 includes a first transfer device 54, a second transfer device 55 and a bonding device 56. The first transfer device 54, the second transfer device 55 and the bonding device 56 are adjacent to the second transport area 51.

The first transfer device 54 is disposed between the first transfer area 31 and the second transfer area 51 and temporarily stores the carrier A. The first transfer device 54 relays the carrier A between the first carrier transfer arm 32 and the second carrier transfer arm 52. The relayed carrier A may be loaded with a bare die D or may be stripped of the bare die D.

The second transfer device 55 is disposed between the first transfer area 31 and the second transfer area 51 and temporarily stores the substrate W. The second transfer device 55 relays the substrate W between the first substrate transfer arm 33 and the second substrate transfer arm 53. The relayed substrate W may be before or after the bare die D is bonded (i.e., the substrate DW with the bare die attached).

As shown in FIG6 and FIG7, the bonding device 56 removes the bare die D from the carrier A, and faces the bonding surface Da of the removed bare die D toward the bonding surface Wa of the substrate W, thereby bonding the bare die D to the substrate W. A substrate DW with a bare die attached can be obtained. The second element D2 of the bare die D and the first element W2 of the substrate W are electrically connected. The details of the bonding device 56 are described later.

The control device 9 is, for example, a computer, and includes: a computing unit 91 such as a CPU (Central Processing Unit) and a storage unit 92 such as a memory. The storage unit 92 stores programs for controlling various processes executed in the joining system 1. The control device 9 controls the operation of the joining system 1 by causing the computing unit 91 to execute the program stored in the storage unit 92. It is also possible to provide a device control unit for controlling the operation of each device constituting the joining system 1, and to provide a system control unit for integrally controlling a plurality of device control units. The control device 9 may also be constituted by a device control unit and a system control unit.

Next, a bonding method according to an embodiment of the present invention will be described with reference to Fig. 2. The process of Fig. 2 is implemented under the control of the control device 9.

First, the third carrier transfer arm 22 takes out the plurality of bare dies D together with the carrier A from the wafer cassette C1 and transfers them to the third transfer device 34 . Then, the first carrier transfer arm 32 takes out the plurality of bare dies D together with the carrier A from the third transfer device 34 and transfers them to the cleaning device 36 .

Next, the cleaning device 36 removes the protective film PF from the bare die D while the carrier A holds the bare die D (step S101 ). Thereafter, the first carrier transfer arm 32 takes out the plurality of bare die D together with the carrier A from the cleaning device 36 and transfers them to the first activation device 37 .

Next, the first activation device 37 activates the bonding surface Da of the bare die D while the carrier A holds the bare die D (step S102 ). Thereafter, the first carrier transfer arm 32 takes out the plurality of bare die D together with the carrier A from the first activation device 37 and transfers them to the first hydrophilization device 38 .

Next, the first hydrophilization device 38 hydrophilizes the bonding surface Da of the die D while the carrier A holds the die D (step S103). Thereafter, the first carrier transfer arm 32 takes out the plurality of die D together with the carrier A from the first hydrophilization device 38 and transfers them to the first transfer device 54. Next, the second carrier transfer arm 52 takes out the plurality of die D together with the carrier A from the first transfer device 54 and transfers them to the bonding device 56.

The following steps S104-S105 are performed in parallel with the above steps S101-S103. First, the third substrate transfer arm 23 takes out the substrate W from the wafer cassette C3 and transfers it to the fourth transfer device 35. Then, the first substrate transfer arm 33 takes out the substrate W from the fourth transfer device 35 and transfers it to the second activation device 39.

Next, the second activation device 39 activates the bonding surface Wa of the substrate W (step S104 ). Thereafter, the first substrate transfer arm 33 takes out the substrate W from the second activation device 39 and transfers it to the second hydrophilization device 40 .

Next, the second hydrophilization device 40 hydrophilizes the bonding surface Wa of the substrate W (step S105). Thereafter, the first substrate transfer arm 33 takes out the substrate W from the second hydrophilization device 40 and transfers it to the second transfer device 55. Next, the second substrate transfer arm 53 takes out the substrate W from the second transfer device 55 and transfers it to the bonding device 56.

Next, the bonding device 56 removes the bare die D from the carrier A, and faces the bonding surface Da of the removed bare die D toward the bonding surface Wa of the substrate W, thereby bonding the bare die D to the substrate W (step S106). In this way, a substrate DW with a bare die attached can be obtained. Thereafter, the second substrate transport arm 53 takes out the substrate DW with a bare die attached from the bonding device 56, and transports it to the second transfer device 55. Next, the first substrate transport arm 33 takes out the substrate DW with a bare die attached from the second transfer device 55, and transports it to the inspection device 41.

Next, the inspection device 41 inspects whether the bonding state between the substrate W and the bare crystal D is good or bad (step S107). The inspection device 41 transmits the inspection result to the control device 9. The control device 9 confirms whether there is a defect (step S108). The control device 9 performs the following operations based on the inspection result of the inspection device 41: screening the transport destination of the substrate DW with the bare crystal as the annealing device 43 or the stripping device 42. The inspection does not have to be performed every time. For example, the inspection can also be performed for each batch, each predetermined number of wafers, and each predetermined time. The batch is composed of a plurality of wafers (for example, 25 wafers) of wafers W stored in a wafer cassette C3. It is sufficient to inspect only the first wafer W in the batch.

When the bonding state of the bare crystal D is defective (step S108, no), the transport destination of the substrate DW with the bare crystal attached becomes the peeling device 42. The first substrate transport arm 33 takes out the substrate DW with the bare crystal attached from the inspection device 41 and transports it to the peeling device 42. Then, the peeling device 42 peels the bare crystal D with the defective bonding state from the substrate W (step S109). Thereafter, the first substrate transport arm 33 takes out the substrate DW with the bare crystal attached from the peeling device 42 and transports it to the annealing device 43. Thereafter, the processing after step S110 is performed.

Furthermore, other actions may be performed after step S109. First, the first substrate transport arm 33 takes out the substrate W from the stripping device 42 and transports it to the second transfer device 55. Then, the second substrate transport arm 53 takes out the substrate W from the second transfer device 55 and transports it to the bonding device 56. The bonding device 56 rebonds the bare die D at the position where the bare die D was stripped. Afterwards, the processing after step S107 may be performed again.

On the other hand, when the bonding state of all the bare die D is good (step S108, yes), the transfer destination of the substrate DW with bare die attached becomes the annealing device 43. The first substrate transfer arm 33 takes out the substrate DW with bare die attached from the inspection device 41 and transfers it to the annealing device 43. Then, the annealing device 43 heats the substrate DW with bare die attached (step S110). The bonding strength between the bare die D and the substrate W is improved by the heat treatment.

Thereafter, the first substrate transfer arm 33 takes out the substrate DW with the bare die from the annealing device 43 and transfers it to the fourth transfer device 35. Finally, the third substrate transfer arm 23 takes out the substrate DW with the bare die from the fourth transfer device 35 and stores it in the wafer cassette C4. The substrate DW with the bare die is transferred out of the bonding system 1 while being stored in the wafer cassette C4.

Furthermore, after the above step S106, the second carrier transfer arm 52 takes out the carrier A from the bonding device 56 and transfers it to the first transfer device 54. Then, the first carrier transfer arm 32 takes out the carrier A from the first transfer device 54 and transfers it to the third transfer device 34. Finally, the third carrier transfer arm 22 takes out the carrier A from the third transfer device 34 and stores it in the wafer cassette C2.

Next, the details of the bonding device 56 are mainly described with reference to FIG. 6 and FIG. 7. The bonding device 56 removes the bare die D from the carrier A, and makes the bonding surface Da of the removed bare die D face the bonding surface Wa of the substrate W, thereby bonding the bare die D to the substrate W. A substrate DW with a bare die attached can be obtained. The second element D2 of the bare die D and the first element W2 of the substrate W are electrically connected.

The bonding device 56 includes, for example, a carrier holding portion 61, a substrate holding portion 62, a first transporting portion 63, and an assembling portion 65. The carrier holding portion 61 holds the carrier A. The substrate holding portion 62 holds the substrate W. The first transporting portion 63 receives and transports the bare die D from the carrier A held by the carrier holding portion 61. The assembling portion 65 receives and mounts the received bare die D on the substrate W held by the substrate holding portion 62.

The carrier holding part 61 holds the carrier A horizontally from below with the bonding surface Da of the bare crystal D facing upward. The substrate holding part 62 holds the substrate W horizontally from below with the bonding surface Wa of the substrate W facing upward. The first transporting part 63 turns the bare crystal D upside down during the transport of the bare crystal D so that the bonding surface Da of the bare crystal D faces downward. The mounting part 65 receives the bare crystal D from the first transporting part 63 and mounts the received bare crystal D on the substrate W held by the substrate holding part 62.

In addition, the carrier holding portion 61 of the present embodiment holds the carrier A horizontally from below with the bonding surface Da of the bare crystal D facing upward, but the technology of the present invention is not limited to this. For example, the carrier holding portion 61 may also hold the carrier A horizontally from above with the bonding surface Da of the bare crystal D facing downward. In this case, the first transporting portion 63 does not need to turn the bare crystal D upside down during the transport of the bare crystal D. The mechanism for turning the bare crystal D upside down individually can be removed, and dust generated by the mechanism can be suppressed.

The first transport unit 63 includes, for example, a first suction head 63a and a first moving mechanism 63b. The first suction head 63a suctions the bare crystal D. The first suction head 63a suctions the bare crystal D while facing the bonding surface Da of the bare crystal D. In order to prevent contamination of the bonding surface Da of the bare crystal D, the first suction head 63a preferably suctions the bare crystal D in a non-contact manner. The first moving mechanism 63b moves the first suction head 63a.

The details of the first moving mechanism 63b will be described later, but as shown in Figures 8 to 11, the first suction head 63a moves between the first receiving position P1 and the first transfer position P2. The first receiving position P1 is the position where the first suction head 63a receives the bare crystal D from the carrier A. The first transfer position P2 is the position where the first suction head 63a transfers the bare crystal D to the assembly part 65. The first moving mechanism 63b can also flip the first suction head 63a up and down during the transportation of the bare crystal D, thereby turning the bare crystal D up and down.

The bonding device 56 may also include a pushing portion 66. The pushing portion 66 pushes the bare crystal D upward in order to separate the bare crystal D from the carrier A held by the carrier holding portion 61. The pushing portion 66 pushes the bare crystal D upward, for example, by supplying gas to the through hole A3 of the conductive substrate A1, or by inserting a pin (not shown) into the through hole A3. Furthermore, when the carrier A is turned upside down, the pushing portion 66 pushes the bare crystal D downward. The pushing portion 66 only needs to push the bare crystal D in the direction to separate the bare crystal D from the carrier A. The first transport portion 63 receives the bare crystal D pushed out by the pushing portion 66 from the carrier A at the first receiving position P1.

In the case where the pushing portion 66 is provided, the carrier holding portion 61 may also only adsorb a portion of the bottom surface of the carrier A. In the remaining portion of the bottom surface of the carrier A, the pushing portion 66 may push the bare crystal D upward. The carrier holding portion 61 is formed, for example, in a ring shape, and adsorbs the outer peripheral portion of the bottom surface of the carrier A. In the central portion of the bottom surface of the carrier A, the pushing portion 66 may push the bare crystal D upward. Furthermore, in the case where the bare crystal D can be separated from the carrier A only by raising the bare crystal D together with the first adsorption head 63a, the pushing portion 66 may not be required.

The bonding device 56 may also include a carrier moving unit 67. The carrier moving unit 67 moves the carrier A together with the carrier holding unit 61. The carrier moving unit 67, for example, moves the carrier A in the X-axis direction and the Y-axis direction. In this way, even if the pushing unit 66 cannot move in the X-axis direction and the Y-axis direction, the pushing unit 66 can push a plurality of bare crystals D in a desired order. The first conveying unit 63 can receive the bare crystal D at the same first receiving position P1 each time. In this way, the movement of the first conveying unit 63 can be simplified. The carrier moving unit 67 can also rotate the carrier A around the lead straight axis instead of moving it in the X-axis direction. In addition, the carrier moving unit 67 can also move the carrier A in the Z-axis direction.

The bonding device 56 may also include a substrate moving part 68. The substrate moving part 68 moves the substrate W together with the substrate holding part 62. The substrate moving part 68 moves the substrate W in the X-axis direction and the Y-axis direction, for example. Thereby, the bonding position of the bare crystal D with respect to the substrate W can be changed. As a result, the first conveying part 63 can transfer the bare crystal D to the assembly part 65 at the same first transfer position P2 each time. Thereby, the movement of the first conveying part 63 can be simplified. The substrate moving part 68 can also rotate the substrate W around the lead straight axis instead of moving it in the X-axis direction. Furthermore, the substrate moving part 68 can also move the substrate W in the Z-axis direction.

The assembly part 65 includes, for example, a third suction head 65a and a third moving mechanism 65b. The third suction head 65a suctions the bare crystal D from the side opposite to the first suction head 63a and the second suction head 64a described later. The bare crystal D has a bonding surface Da and a back surface Db in the opposite direction to the bonding surface Da. Since there will be no problem even if the back surface Db is contaminated, the third suction head 65a can contact the back surface Db of the bare crystal D.

The third moving mechanism 65b moves the third suction head 65a in the Z-axis direction, thereby bonding the bare crystal D to the substrate W. In order to improve the accuracy of the bonding position of the bare crystal D to the substrate W, the third moving mechanism 65b can also move the third suction head 65a in the X-axis direction and the Y-axis direction, and can also rotate the third suction head 65a around the lead axis. The amount of movement or rotation required to improve the accuracy of the bonding position is very small, and the third suction head 65a may be almost not moved when observed from above.

In order to improve the accuracy of the bonding position of the bare die D to the substrate W, the bonding device 56 may also include at least one of a first photographing unit 71, a second photographing unit 72, and a third photographing unit 73. In addition, the first photographing unit 71, the second photographing unit 72, and the third photographing unit 73 do not need to capture images every time the bare die D is bonded to the substrate W, but may capture images periodically.

As shown in FIG6 , the first photographing unit 71 photographs the alignment marks of the bonding surface Da of the bare die D held by the third suction head 65a. The number of the photographed alignment marks is, for example, two, but is not particularly limited. The alignment mark may also be a dedicated mark or may be a part of the electronic circuit constituting the second element D2.

The first photographing unit 71 is, for example, disposed below the third suction head 65a. The first photographing unit 71 transmits the photographed image to the control device 9. The control device 9 processes the image photographed by the first photographing unit 71 to detect the position of the bare die D in the first coordinate system set in the third suction head 65a.

As shown in FIG7 , the second photographing unit 72 photographs the alignment marks of the bonding surface Wa of the substrate W held by the substrate holding unit 62. The number of the photographed alignment marks is, for example, two, but is not particularly limited. The alignment mark may be a dedicated mark or may be a part of the electronic circuit constituting the first element W2.

The second camera 72 is, for example, disposed above the substrate holding portion 62, for example, disposed on the third suction head 65a. The second camera 72 transmits the captured image to the control device 9. The control device 9 processes the image captured by the second camera 72 to detect the position of the first element W2 in the second coordinate system set in the substrate holding portion 62.

The control device 9 uses the images captured by at least one of the first imaging unit 71 and the second imaging unit 72 to align the position of the bare die D held by the third suction head 65a with the substrate W held by the substrate holding unit 62. The position alignment is performed by controlling at least one of the third moving mechanism 65b and the substrate moving unit 68. Before the bare die D and the substrate W are bonded, the position of the bare die D or the substrate W can be corrected, and the accuracy of the bonding position can be improved.

After the bare crystal D is bonded to the substrate W, the third imaging unit 73 simultaneously photographs both the alignment mark on the bonding surface Da of the bare crystal D and the alignment mark on the bonding surface Wa of the substrate W. The third imaging unit 73 photographs the alignment marks of the bare crystal D and the substrate W through the bare crystal D, for example. The third imaging unit 73 is composed of an infrared camera, for example.

The third photographing unit 73 is disposed, for example, above the substrate holding unit 62, for example, on the third suction head 65a, when photographing the alignment marks of the bare die D and the substrate W through the bare die D. The third photographing unit 73 transmits the photographed image to the control device 9. The control device 9 processes the image photographed by the third photographing unit 73 to detect the deviation between the actual bonding position and the target bonding position.

The control device 9 uses the image captured by the third imaging unit 73 to align the position of the die D held by the third suction head 65a and the substrate W held by the substrate holding unit 62 in the next subsequent bonding of the die D and the substrate W. The position of the die D or the substrate W can be corrected by taking the properties of the bonding device 56 into consideration, thereby improving the accuracy of the bonding position.

Next, the second transporting part 64 is described with reference to FIGS. 8 to 11 . The bonding device 56 includes the second transporting part 64. The second transporting part 64 is different from the first transporting part 63, and receives the bare crystal D from the carrier A for transport. The assembling part 65 receives the bare crystal D from the first transporting part 63 and the second transporting part 64 in the desired order, and mounts the received bare crystal D on the substrate W held by the substrate holding part 62. After the assembling part 65 mounts the nth bare crystal D on the substrate W, and before the first transporting part 63 transfers the (n+2)th bare crystal D to the assembling part 65, the second transporting part 64 transfers the (n+1)th bare crystal D to the assembling part 65, and the assembling part 65 mounts the (n+1)th bare crystal D on the substrate W. Thus, the standby time of the assembly unit 65 can be shortened, the availability of the assembly unit 65 can be improved, and the bonding efficiency of the bare die D to the substrate W can be improved. Even if the bare die D is thin and the transfer of the bare die D takes time, the bare die D can be efficiently bonded to the substrate W. In addition, the nth bare die D refers to the nth bare die D bonded to one substrate W.

The second transport unit 64 includes, for example, a second suction head 64a and a second moving mechanism 64b. The second suction head 64a suctions the bare crystal D. The second suction head 64a suctions the bare crystal D while facing the bonding surface Da of the bare crystal D. In order to prevent contamination of the bonding surface Da of the bare crystal D, the second suction head 64a preferably suctions the bare crystal D in a non-contact manner. The second moving mechanism 64b moves the second suction head 64a.

The second moving mechanism 64b moves the second suction head 64a between the second receiving position P3 and the second transfer position P4. The second receiving position P3 is the position where the second suction head 64a receives the bare crystal D from the carrier A. The second transfer position P4 is the position where the second suction head 64a transfers the bare crystal D to the assembly part 65. The second moving mechanism 64b can also flip the second suction head 64a upside down during the transportation of the bare crystal D, thereby flipping the bare crystal D upside down.

When viewed from above, the outward stroke B1 of the first suction head 63a from the first receiving position P1 to the first transfer position P2 and the outward stroke B3 of the second suction head 64a from the second receiving position P3 to the second transfer position P4 may also overlap. In the present embodiment, the outward stroke B1 of the first suction head 63a and the outward stroke B3 of the second suction head 64a completely overlap, but at least a portion of them may overlap. The installation area of the bonding device 56 can be reduced.

When viewed from above, the first receiving position P1 and the second receiving position P3 will overlap, and the first transfer position P2 and the second transfer position P4 will overlap. In this case, the outward stroke B1 of the first suction head 63a and the outward stroke B3 of the second suction head 64a will completely overlap. Not only can the installation area of the bonding device 56 be simply reduced, but also multiple (preferably all) bare crystals D can be transported from the carrier A to the assembly part 65 with the same path. Therefore, multiple bare crystals D can be bonded to the substrate W with the same quality.

When viewed from above, the return path B2 of the first suction head 63a except the outward path B1 and the return path B4 of the second suction head 64a except the outward path B3 do not overlap. While one of the first suction head 63a and the second suction head 64a is moving in the outward path, the other can move in the return path. Compared with the case where the movement of one is stopped and the movement of the other is carried out, the movement efficiency is better.

When viewed from above, the return stroke B2 of the first suction head 63a and the return stroke B4 of the second suction head 64a can be arranged to be linearly symmetrical across the outward strokes B1 and B3. When viewed from above, the return stroke B2 of the first suction head 63a is formed into a U shape, for example, and the return stroke B4 of the second suction head 64a is formed into an inverse U shape, for example.

As shown in FIG8 , while the first suction head 63a receives the bare die D from the carrier A at the first receiving position P1, the second suction head 64a transfers the bare die D to the assembly portion 65 at the second transfer position P4. Thereafter, as shown in FIG9 , while the first suction head 63a moves from the first receiving position P1 to the first transfer position P2, the second suction head 64a moves from the second transfer position P4 to the second receiving position P3.

Next, as shown in FIG10 , while the first suction head 63a transfers the bare die D to the assembly portion 65 at the first transfer position P2, the second suction head 64a receives the bare die D from the carrier A at the second receiving position P3. Thereafter, as shown in FIG11 , while the first suction head 63a moves from the first transfer position P2 to the first receiving position P1, the second suction head 64a moves from the second receiving position P3 to the second transfer position P4.

The actions shown in Figures 8 to 11 are repeated. When viewed from above, the first receiving position P1 and the second receiving position P3 are at the same position each time. Also, when viewed from above, the first transfer position P2 and the second transfer position P4 are at the same position each time.

The first transporting part 63 and the second transporting part 64 can transport the dies D alternately. For example, the first transporting part 63 transports the odd-numbered dies D, and the second transporting part 64 transports the even-numbered dies D. The first transporting part 63 can also transport the even-numbered dies D, and the second transporting part 64 can also transport the odd-numbered dies D.

As shown in FIG. 9 , when viewed from above, after the first suction head 63a receives the bare wafer D from the carrier A and before the second suction head 64a receives the bare wafer D from the carrier A, the carrier moving unit 67 can move the carrier A in the Y-axis direction so that the first receiving position P1 overlaps with the second receiving position P3. Furthermore, the carrier moving unit 67 only needs to move the carrier A in at least one of the X-axis direction and the Y-axis direction. Furthermore, the carrier moving unit 67 can also rotate the carrier A around the lead axis instead of moving it in the X-axis direction.

Furthermore, as shown in FIG. 11 , when viewed from above, after the second suction head 64a receives the bare wafer D from the carrier A and before the first suction head 63a receives the bare wafer D from the carrier A, the carrier moving unit 67 can move the carrier A in the Y-axis direction so that the first receiving position P1 overlaps with the second receiving position P3. Furthermore, the carrier moving unit 67 only needs to move the carrier A in at least one of the X-axis direction and the Y-axis direction. Furthermore, the carrier moving unit 67 can also rotate the carrier A around the lead axis instead of moving it in the X-axis direction.

The carrier A is moved in the X-axis direction and the Y-axis direction by the carrier moving part 67. Even if the pushing part 66 does not move in the X-axis direction and the Y-axis direction, the pushing part 66 can push the plurality of bare die D in a desired order. When viewed from above, the pushing part 66 is at a position where the first receiving position and the second receiving position overlap, and pushes the bare die D upward to separate the bare die D from the carrier A. In addition, when the carrier A is turned upside down, the pushing part 66 pushes the bare die D downward. The pushing part 66 only needs to push the bare die D in the direction to separate the bare die D from the carrier A.

The above describes the embodiments of the bonding device, bonding system and bonding method according to the present invention, but the present invention is not limited to the above embodiments. Various changes, modifications, replacements, additions, removals and combinations can be made within the scope of the patent application. Of course, they also belong to the technical scope of the present invention.

1: Bonding system 2: Loading and unloading station 3: First processing station 5: Second processing station 9: Control device 20: Loading table 21: Third transport area 22: Third carrier transport arm 23: Third substrate transport arm 31: First transport area 32: First carrier transport arm 33: First substrate transport arm 34: Third transfer device 35: Fourth transfer device 36: Cleaning device 37: First activation device 38: First hydrophilization device 39: Second activation device 40: Second hydrophilization device 41: Inspection device 42: Stripping device 43: Annealing device 51: Second transport area 52: Second carrier transport arm 53: Second substrate transport arm 54: First transfer device 55: Second transfer device 56: Joining device 61: Carrier holding part 62: Substrate holding part 63: First transport part 63a: First suction head 63b: First moving mechanism 64: Second transport part 64a: Second suction head 64b: Second moving mechanism 65: Assembly part 65a: Third suction head 65b: Third moving mechanism 66: Pushing part 67: Carrier moving part 68: Substrate moving part 71: First shooting part 72: Second shooting part 73: Third shooting part 91: Calculation part 92: Storage part A: Carrier A1: Conductive substrate A2: Insulation film A3: Through hole A4: Through hole B1, B3: Outward B2, B4: Return C1~C4: Wafer cassette D: Bare wafer D1: Second base substrate D2: Second component Da: Bonding surface Db: Back surface DW: Substrate P1: First receiving position P2: First transfer position P3: Second receiving position P4: Second transfer position PF: Protective film S101~S110: Steps W: Substrate W1: First base substrate W2: First component Wa: Bonding surface

FIG. 1 is a top view showing a bonding system according to an embodiment. FIG. 2 is a flow chart showing a bonding method according to an embodiment. FIG. 3 is a cross-sectional view showing an example of a carrier equipped with a bare crystal. FIG. 4 is a cross-sectional view showing an example of a substrate. FIG. 5 is a cross-sectional view showing an example of a substrate with a bare crystal attached. FIG. 6 is a cross-sectional view showing an example of an action of a bonding device. FIG. 7 is a cross-sectional view showing an example of an action subsequent to FIG. 6. FIG. 8 is a top view showing an example of movement of a first suction head and a second suction head observed from above. FIG. 9 is a top view showing an example of movement of a first suction head and a second suction head subsequent to FIG. 8. FIG. 10 is a top view showing an example of movement of a first suction head and a second suction head subsequent to FIG. 9. FIG11 is a top view showing an example of the movement of the first suction head and the second suction head following FIG10 .

63: First Transportation Department

63a: First suction head

63b: First moving mechanism

64: Second Transportation Department

64a: Second suction head

64b: Second moving mechanism

65: Assembly Department

66: Pushing part

A: Vehicles

B1, B3: Outbound

B2, B4: Return trip

P1: The first receiving position

P2: First transfer position

P3: Second receiving position

P4: Second transfer position

Claims (11)

A bonding device is provided for bonding a plurality of bare crystals to a substrate; The substrate has a plurality of first components on a bonding surface with the bare crystals, and the bare crystal has a second component electrically connected to the first components on a bonding surface with the substrate; The bonding device comprises: A carrier holding portion for holding a carrier on which the plurality of bare crystals are mounted; A substrate holding portion for holding the substrate; A first transporting portion for receiving and transporting the bare crystals from the carrier held by the carrier holding portion; A second transporting portion, different from the first transporting portion, for receiving and transporting the bare crystals from the carrier; and An assembling portion for receiving the bare crystals from the first transporting portion and the second transporting portion in a desired order, and mounting the received bare crystals on the substrate held by the substrate holding portion. The bonding device as described in claim 1, wherein, the first transport section comprises: a first adsorption head for adsorbing the bare crystal; and a first moving mechanism for moving the first adsorption head; the first moving mechanism moves the first adsorption head between a first receiving position where the first adsorption head receives the bare crystal from the carrier and a first transfer position where the first adsorption head transfers the bare crystal to the assembly section; the second transport section comprises: a second adsorption head for adsorbing the bare crystal; and a second moving mechanism for moving the second adsorption head; the second moving mechanism moves the second adsorption head between a second receiving position where the second adsorption head receives the bare crystal from the carrier and a second transfer position where the second adsorption head transfers the bare crystal to the assembly section. A joining device as described in claim 2, wherein, when viewed from above, the outward movement of the first suction head from the first receiving position to the first transfer position overlaps the outward movement of the second suction head from the second receiving position to the second transfer position. A joining device as described in claim 3, wherein, when viewed from above, the first receiving position overlaps with the second receiving position, and the first transfer position overlaps with the second transfer position. A joining device as described in claim 4, wherein, when viewed from above, the return path of the first suction head other than the outward path does not overlap with the return path of the second suction head other than the outward path. The joining device as described in claim 4 or 5 further comprises: A carrier moving portion that moves the carrier holding portion when viewed from above. The bonding device as described in claim 6, wherein, the carrier moving part moves the carrier holding part after the first suction head receives the bare die from the carrier and before the second suction head receives the bare die from the carrier. The bonding device as described in claim 4 or 5 further comprises: A pushing portion, when viewed from above, at a position where the first receiving position overlaps with the second receiving position, to push the bare die upward or downward in order to separate the bare die from the carrier held by the carrier holding portion. A bonding system, comprising: A bonding device as described in any one of claims 1 to 5; A first activation device, which activates the bonding surface of the bare die when the bare die is mounted on the carrier; A first hydrophilization device, which hydrophilizes the bonding surface of the bare die when the bare die is mounted on the carrier; A first transfer device, which temporarily stores the carrier; A first transport area, which is adjacent to the first activation device, the first hydrophilization device and the first transfer device; A first carrier transport arm, which transports the carrier in the first transport area; A second transport area, which is arranged on the opposite side of the first transport area based on the first transfer device and is adjacent to the first transfer device and the bonding device; and A second carrier transport arm, which transports the carrier in the second transport area. A bonding system, comprising: A bonding device as described in any one of claims 1 to 5; A second activation device for activating the bonding surface of the substrate; A second hydrophilization device for hydrophilizing the bonding surface of the substrate; A second transfer device for temporarily storing the substrate; A first transport area, adjacent to the second activation device, the second hydrophilization device and the second transfer device; A first substrate transport arm for transporting the substrate in the first transport area; A second transport area, arranged on the opposite side of the first transport area based on the second transfer device, and adjacent to the second transfer device and the bonding device; and A second substrate transport arm for transporting the substrate in the second transport area. A bonding method comprises the following steps: Using a bonding device as described in any one of claims 1 to 5, the bare die is bonded to the substrate.

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