TW202501843A - Micro-sucker transfer micro-light-emitting diode (micro-led) method - Google Patents
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Abstract
Description
本發明涉及一種顯示影像技術領域法,特別指一種利用彈性微吸盤從載體基板上選擇性或全面性的吸附拾取微型發光二極體(Micro LED)轉移至目標基板的一種微吸盤轉移微型發光二極體(Micro LED)方法。 The present invention relates to a method in the field of display imaging technology, and in particular to a method for transferring micro LEDs by using a micro suction cup to selectively or comprehensively pick up micro LEDs from a carrier substrate and transfer them to a target substrate.
微型發光二極體(Micro LED)技術是指以高密度集成在基板上的小尺寸LED陣列。目前,微型發光二極體(Micro LED)技術正在開始發展,並且在業界中期望高質量的微型發光二極體(Micro LED)產品進入市場。高質量的微型發光二極體(Micro LED)將對已經投放市場的傳統顯示產品(如LCD/OLED)產生深遠的影響。 Micro LED technology refers to small-size LED arrays integrated on a substrate with high density. Currently, Micro LED technology is beginning to develop, and the industry expects high-quality Micro LED products to enter the market. High-quality Micro LED will have a far-reaching impact on traditional display products (such as LCD/OLED) that have already been launched on the market.
微型發光二極體(Micro LED)除可取代傳統的LCD與OLED作為面板顯示器外,因擁有超省電之優勢,故也適合應用於穿戴式裝置螢幕、電子看板、抬頭顯示器(HUD)、頭戴式顯示器(HMD)等,因此微型發光二極體(Micro LED)被視為提供更優質顯示影像的技術。 Micro LED can replace traditional LCD and OLED as panel displays. It is also suitable for wearable device screens, electronic billboards, head-up displays (HUD), head-mounted displays (HMD), etc. due to its ultra-power-saving advantages. Therefore, Micro LED is regarded as a technology that provides better display images.
微型發光二極體(Micro LED)量產解決的四大難題在於:(1)巨量轉移(Mass Transfer)、(2)接合(Bonding)、(3)維修(Repair)及(4)紅光Micro LED的發光效率;其中最重要的瓶頸技術就是巨量轉移的技術。 The four major challenges that need to be solved in the mass production of Micro LEDs are: (1) mass transfer, (2) bonding, (3) repair, and (4) the luminous efficiency of red Micro LEDs; the most important bottleneck technology is mass transfer technology.
在現有技術中,有通過靜電技術和黏附技術拾取來執行轉移。其中:靜電技術,例如LuxVue美國專利第8,333,860B1號(US2013/0127020A1)公開了一種轉移微型器件的方法,該方法揭露將電壓施加到轉移頭中的電極上,通過靜電產生吸力以拾取微型器件。由於微型化之微型發光二極體(Micro LED)享有體積縮小帶來之優勢,然而微型化的體積在製造上亦面臨新的困難與挑戰。在靜電轉移過程中,靜電轉移頭陣列平面需跟微型發光二極體(Micro LED)陣列平面對準,再進行拾取及轉移,因此,在製造上,每一微型發光二極體(Micro LED)的位置以及高度必須精確控制,任一微型發光二極體(Micro LED)位置的偏移、高度的差異或是汙染,都有可能導致整個微型發光二極體(Micro LED)陣列轉移的失敗,造成良率的降低以及成本的增加。此外,在微型發光二極體(Micro LED)製造過程中,需要額外的介電層,因此,研發具有穩健性(robust)的發明,使得靜電轉移具備強健的免疫力以抵禦製程的變異,是靜電轉移技術最大之困難與挑戰。黏附技術,例如X-Celeprint所開發的Micro-Transfer-Printing(μTP)技術,利用犧牲層濕蝕刻和PDMS轉貼技術。X-Celeprint μTP技術,該技術使用彈性印模(stamp)結合高精度運動控制列印頭,有選擇地拾取(pick-up)微型器件的大陣列,並將其列印(放置)到替換基板上。首先,在源晶圓上製作微型器件(晶片),然後通過移除微型器件(晶片)下面的犧牲層獲得「釋放」。再將彈性印模由源晶圓上拾取微型器件,並將微型器件列印(放置)在目標基板上。 In the prior art, there are electrostatic technology and adhesive technology to perform transfer. Among them: electrostatic technology, such as LuxVue US Patent No. 8,333,860B1 (US2013/0127020A1) discloses a method for transferring micro devices, which discloses applying voltage to the electrodes in the transfer head to generate suction through static electricity to pick up the micro devices. Due to the advantages brought by the miniaturization of micro light-emitting diodes (Micro LEDs), however, the miniaturization of the volume also faces new difficulties and challenges in manufacturing. During the electrostatic transfer process, the electrostatic transfer head array plane must be aligned with the Micro LED array plane before picking up and transferring. Therefore, in manufacturing, the position and height of each Micro LED must be precisely controlled. Any deviation in the position, height difference or contamination of any Micro LED may lead to the failure of the entire Micro LED array transfer, resulting in a reduction in yield and an increase in cost. In addition, in the micro-light-emitting diode (Micro LED) manufacturing process, an additional dielectric layer is required. Therefore, the development of robust inventions that make ESD have strong immunity to process variations is the biggest difficulty and challenge of ESD technology. Adhesion technology, such as Micro-Transfer-Printing (μTP) technology developed by X-Celeprint, uses sacrificial layer wet etching and PDMS transfer technology. X-Celeprint μTP technology, which uses a flexible stamp combined with a high-precision motion control print head to selectively pick up large arrays of micro devices and print (place) them on a replacement substrate. First, a micro device (chip) is made on a source wafer, and then "released" by removing the sacrificial layer underneath the micro device (chip). Then, an elastic stamp picks up the micro device from the source wafer and prints (places) the micro device on the target substrate.
另外,例如X-Celeprint US2017173852A1公開了一微結構與設 備,該方法能夠利用微轉移列印的方法將微元件轉印到基材上。微元件形成在來源基材上,通過壓模圖章的接觸將其從來源基材釋放,並將微元件粘附到圖章上,隨後將其壓在目標基材上以將微元件粘附到目標基材上。然後將圖章從目標基板上移開,將微元件留在目標基板上。然而,整個圖章的結構是『頂部平坦的柱狀結構』,圖章與微元件之間的粘附力主要取決於凡得瓦力,即圖章接近速度越快,粘附力越大,反之則粘附力越小。通過圖章接近速度的快慢來調節粘附力的大小將導致整個過程的精度控制困難、整個設備控制複雜化、對於轉移缺陷較為敏感以及缺陷修復的問題。 In addition, for example, X-Celeprint US2017173852A1 discloses a microstructure and device, which can transfer microcomponents to a substrate using a microtransfer printing method. The microcomponent is formed on a source substrate, released from the source substrate by contact with a stamp, and adhered to the stamp, which is then pressed onto a target substrate to adhere the microcomponent to the target substrate. The stamp is then removed from the target substrate, leaving the microcomponent on the target substrate. However, the structure of the entire stamp is a "columnar structure with a flat top", and the adhesion between the stamp and the microcomponent mainly depends on the van der Waals force, that is, the faster the stamp approaches, the greater the adhesion, and vice versa. Adjusting the adhesion by adjusting the speed of the stamp approach will lead to difficulties in precision control of the entire process, complexity of the entire equipment control, greater sensitivity to transfer defects, and problems with defect repair.
又,錼創107113115號公開了一種轉移載板與晶粒載板,利用轉移件下方的黏結層(塊)由第一基板黏附該驅動電路後,再轉移至第二基板。該專利在此全文引入作為參考。 In addition, Innolux patent No. 107113115 discloses a transfer carrier and a die carrier, which uses a bonding layer (block) under the transfer piece to adhere the driving circuit from the first substrate and then transfer it to the second substrate. The entire text of the patent is incorporated herein by reference.
另外,例如X-Celeprint的專利申請案TW201614860A中公開了一種的微轉印技術,包括:拾取/轉印之前的準備工作、拾取/轉印的技術以及目的基板組裝技術。 In addition, for example, X-Celeprint's patent application TW201614860A discloses a micro-transfer technology, including: preparation work before picking up/transferring, picking up/transferring technology, and target substrate assembly technology.
拾取/轉印之前的準備工作: Preparation before picking up/transferring:
(1)拾取/轉印之前的準備工作是指提供可大規模微轉印之微型發光二極體(Micro LED)之可釋放結構及方法,其有別於目前微型發光二極體(Micro LED)量產標準。X-Celeprint在其專利申請案TW 201614860A中提出的拾取/轉印之前的準備方法,其中一項態樣為一種自矽基板來準備可釋放結構之方法專利,該方法包括:在矽Si<111>晶格結構的基板上沉積GaN磊晶層;使用該磊晶層形成微型發光二極體(Micro LED);將該微型發光二極體(Micro LED)利用微影蝕刻技術劃界;並形成錨定結構及拴繫結構,藉由此錨定結構及拴 繫結構將微型發光二極體(Micro LED)裝置連結基板:然後再藉助另一蝕刻劑將此結構下方的矽材料移除,藉此形成包括該微型發光二極體(Micro LED)裝置之可印刷結構。 (1) Preparation work before picking up/transferring refers to providing a releasable structure and method for micro-LEDs that can be micro-transferred on a large scale, which is different from the current mass production standard of micro-LEDs. X-Celeprint proposed a preparation method before pick-up/transfer in its patent application TW 201614860A, one of which is a method patent for preparing a releasable structure from a silicon substrate, the method comprising: depositing a GaN epitaxial layer on a substrate with a Si<111> lattice structure; using the epitaxial layer to form a micro light-emitting diode (Micro LED); demarcating the micro light-emitting diode (Micro LED) using photolithography technology; and forming an anchoring structure and a tethering structure, and connecting the micro light-emitting diode (Micro LED) device to the substrate by means of the anchoring structure and the tethering structure; and then removing the silicon material under the structure by means of another etchant, thereby forming a printable structure including the micro light-emitting diode (Micro LED) device.
(2)由於矽基板與構成微型發光二極體(Micro LED)之GaN晶體的晶格結構之間,晶格不匹配度較高,降低微型發光二極體(Micro LED)的效能,因此,X-Celeprint在其專利申請案TW 201614860A中提出另一種在藍寶石原生基板上形成可釋放結構之方法,並使用具有一受控之膠黏性之中間基板來操作,其中該膠黏性可藉由交聯密度、表面化學、表面紋理、表面組合物、彈性體層厚度或表面形貌來控制,亦可藉由壓力或溫度來控制其接合或釋放。 (2) Since the lattice mismatch between the silicon substrate and the GaN crystal that constitutes the Micro LED is high, the performance of the Micro LED is reduced. Therefore, X-Celeprint proposed another method of forming a releasable structure on a sapphire native substrate in its patent application TW 201614860A, and used an intermediate substrate with a controlled adhesive property to operate, wherein the adhesive property can be controlled by cross-linking density, surface chemistry, surface texture, surface composition, elastic layer thickness or surface morphology, and its bonding or release can also be controlled by pressure or temperature.
(二)拾取/轉印: (ii) Pick up/transfer:
由於拾取/轉印前的準備工作之完成,形成具有可釋放結構的微型發光二極體(Micro LED),讓接下來的拾取/轉印技術更能順利執行。同時為了讓拾取/轉印的微型發光二極體(Micro LED)更牢固地移轉至目的基板,在拾取/轉印的過程中加入塗覆聚合物層及加熱盤控制溫度以調整該印模黏著性及促進釋放。 As the preparation work before pick-up/transfer is completed, a Micro LED with a releasable structure is formed, allowing the subsequent pick-up/transfer technology to be executed more smoothly. At the same time, in order to transfer the picked/transferred Micro LED to the target substrate more firmly, a coating polymer layer and a heating plate are added to control the temperature during the pick-up/transfer process to adjust the mold adhesion and promote release.
X-Celeprint台灣專利I659475號,公開了一種印模自原生基板拾取可印刷的微型發光二極體(Micro LED),印模將可印刷微型發光二極體(Micro LED)轉貼至目的基板,熱板與目的基板直接熱接觸,加熱至一平衡溫度,藉此減小印模與聚合物層之間的黏著力,移除聚合物層之後轉印在目的基板上之微型發光二極體(Micro LED)。 X-Celeprint Taiwan Patent No. I659475 discloses a stamp that picks up printable micro-light-emitting diodes (Micro LEDs) from a native substrate. The stamp transfers the printable micro-light-emitting diodes (Micro LEDs) to a target substrate. The hot plate is in direct thermal contact with the target substrate and heated to an equilibrium temperature to reduce the adhesion between the stamp and the polymer layer. After removing the polymer layer, the micro-light-emitting diodes (Micro LEDs) are transferred to the target substrate.
微轉印技術存在的困難與挑戰,例如在拾取前的準備方案中利用矽同質基板來準備可釋放結構之方法,雖然此方案存在著許多好處, 如可以在矽<111>晶格結構上直接形成犧牲層,簡易的KOH溶液做非等向性蝕刻即可將犧牲層除去,簡化了準備可釋放結構之方法,然而卻存在著矽基板磊晶的良率問題,因矽基板與構成LED之GaN晶體的晶格結構之間,晶格匹配度較低,降低LED之效能,故自矽基板準備可釋放結構之製程尚未成熟,並未達到可量產階段的製程。 Difficulties and challenges in micro-transfer printing technology, such as the method of using a silicon homogeneous substrate to prepare a releasable structure in the preparation scheme before picking up, although this scheme has many advantages, such as the ability to directly form a sacrificial layer on the silicon <111> lattice structure, and the sacrificial layer can be removed by simple KOH solution anisotropic etching, which simplifies the method of preparing a releasable structure. However, there is a yield problem of silicon substrate epitaxy, because the lattice matching between the silicon substrate and the lattice structure of the GaN crystal that constitutes the LED is low, which reduces the performance of the LED. Therefore, the process of preparing a releasable structure from a silicon substrate is not yet mature and has not reached the mass production stage.
此外,在以藍寶石為原生基板來準備可釋放結構之方法上,需要中間基板作暫時轉移地,其轉移程式還包含在藍寶石原生基板上製做犧牲層、做雷射剝離以移除藍寶石基板,以及在中間基板製做犧牲層等程式,增加了複雜度,且雷射剝離成本高,良率問題等都待改善。 In addition, in the method of preparing a releasable structure using sapphire as a native substrate, an intermediate substrate is required as a temporary transfer site. The transfer process also includes making a sacrificial layer on the sapphire native substrate, performing laser stripping to remove the sapphire substrate, and making a sacrificial layer on the intermediate substrate, which increases the complexity. The laser stripping cost is high, and the yield problem needs to be improved.
由於X-Celeprint專利申請案TW 201614860A並未提及如何從同質基板上選擇良好的微型發光二極體(Micro LED)晶粒,傳統的LED晶圓經測試後,按照主波長、發光強度、光通亮、色溫、工作電壓、反向擊穿電壓等關鍵參數進行分選,再經薄化、切割後,將LED一顆顆地分成各種不同分選區(binning),而微型發光二極體(Micro LED)比傳統LED更小更多,因此如何以印模大量的選擇拾取不同分選區微型發光二極體(Micro LED),並將其分類,是一大問題。 Since the X-Celeprint patent application TW 201614860A does not mention how to select good Micro LED chips from homogeneous substrates, traditional LED wafers are tested and sorted according to key parameters such as main wavelength, luminous intensity, luminous flux, color temperature, operating voltage, and reverse breakdown voltage. After thinning and cutting, the LEDs are divided into various bins one by one. Micro LEDs are smaller and more numerous than traditional LEDs, so how to use a large number of molds to pick up Micro LEDs from different bins and classify them is a big problem.
在以下本發明中,透過一彈性微吸盤的凹弧結構解決微結構圖章所遇到的問題,使得本發明只需在微吸盤印模中更改預加載壓力,並對載體基板(或原生基板)及目標基板上的結合層加熱改變與微型發光二極體(Micro LED)之間的粘附力,即可利用本發明彈性微吸盤選擇性或全面性的垂直吸附拾取轉移微型發光二極體(Micro LED),達成微型發光二極體(Micro LED)的巨量轉移目的。 In the following invention, the concave arc structure of an elastic micro suction cup is used to solve the problems encountered by the microstructure stamp, so that the invention only needs to change the preload pressure in the micro suction cup stamp, and heat the carrier substrate (or native substrate) and the bonding layer on the target substrate to change the adhesion between the micro light-emitting diode (Micro LED), and then the elastic micro suction cup of the invention can be used to selectively or comprehensively vertically absorb and pick up the transfer of micro light-emitting diodes (Micro LED), so as to achieve the purpose of mass transfer of micro light-emitting diodes (Micro LED).
本發明主要目的在於:提供一種利用印模中的彈性微吸盤凹弧結構設計,使該彈性微吸盤可以容易從載體基板上將微型發光二極體(Micro LED)吸附拾取轉移至目標基板上的一種微吸盤轉移微型發光二極體(Micro LED)方法。 The main purpose of the present invention is to provide a method for transferring micro LEDs by using a micro suction cup, which utilizes the concave arc structure design of the elastic micro suction cup in the stamp, so that the elastic micro suction cup can easily absorb and pick up the micro LEDs from the carrier substrate and transfer them to the target substrate.
本發明的利用彈性微吸盤的凹弧結構吸附拾取轉移的優點在於: The advantages of the present invention of using the concave arc structure of the elastic micro suction cup to absorb, pick up and transfer are:
(1)吸附拾取微型發光二極體(Micro LED),不須複雜機械設計。 (1) Adsorb and pick up micro LEDs without the need for complex mechanical design.
(2)彈性微吸盤與微型發光二極體(Micro LED)之間不須使用黏合劑層,即可吸附拾取微型發光二極體(Micro LED)。 (2) The elastic micro suction cup can absorb and pick up the micro LED without using an adhesive layer between the micro LED and the micro LED.
(3)利用預先設計的彈性微吸盤可選擇性或全面性將微型發光二極體(Micro LED)順序轉移到目標基板,從而克服了分選問題。 (3) Using a pre-designed elastic micro suction cup, the Micro LEDs can be selectively or comprehensively transferred to the target substrate in sequence, thus overcoming the sorting problem.
(4)彈性微吸盤與微型發光二極體(Micro LED)陣列之間的平行度不需嚴格控制。 (4) The parallelism between the elastic micro suction cup and the Micro LED array does not need to be strictly controlled.
(5)彈性微吸盤與微型發光二極體(Micro LED)高度和位置不需像靜電吸附系統那樣嚴格。 (5) The height and position of the elastic micro suction cup and the Micro LED do not need to be as strict as the electrostatic adsorption system.
(6)彈性微吸盤與微型發光二極體(Micro LED)陣列之間不須使用介電層。 (6) No dielectric layer is required between the elastic micro suction cup and the micro LED array.
為了達到上述目的,本發明使用的技術手段為:提供一種微吸盤轉移微型發光二極體(Micro LED)方法,包含以下步驟: In order to achieve the above purpose, the technical means used in the present invention are: providing a method for transferring micro light-emitting diodes (Micro LEDs) using a micro suction cup, comprising the following steps:
(l)提供一載體基板,該載體基板上有至少一個微型發光二極體(Micro LED),每個微型發光二極體(Micro LED)下方透過一第一結合層固定在載體基板上,該第一結合層允許被加熱由固態轉為半固態或液態,使該第一結合層在 固態與液態時,各微型發光二極體(Micro LED)與載體基板之間形成一不同的黏合力F2,舉例來說,當該第一結合層為固態時,各微型發光二極體(Micro LED)與載體基板之間的黏合力為F2,而該第一結合層轉為液態時,各微型發光二極體(Micro LED)與載體基板之間的黏合力會下降至F2'(F2>F2'); (l) providing a carrier substrate, on which there is at least one micro light emitting diode (Micro LED), each micro light emitting diode (Micro LED) being fixed to the carrier substrate via a first bonding layer below, the first bonding layer being allowed to be heated to change from a solid state to a semi-solid state or a liquid state, so that when the first bonding layer is in a solid state and a liquid state, a different bonding force F2 is formed between each micro light emitting diode (Micro LED) and the carrier substrate. For example, when the first bonding layer is in a solid state, the bonding force between each micro light emitting diode (Micro LED) and the carrier substrate is F2, and when the first bonding layer is changed to a liquid state, the bonding force between each micro light emitting diode (Micro LED) and the carrier substrate will drop to F2' (F2>F2');
(2)提供一印模,用以提供吸附拾取載體基板上的微型發光二極體(Micro LED),該印模上有至少一個彈性微吸盤,該每個彈性微吸盤下端呈凹弧形狀結構,當該印模被施加預定壓力時,每個彈性微吸盤會垂直觸壓載體基板上的微型發光二極體(Micro LED)頂面,當該每個彈性微吸盤下端凹弧形狀結構受壓力而被撐開而增加與微型發光二極體(Micro LED)頂面接觸面積,使該每個彈性微吸盤與每個微型發光二極體(Micro LED)產生一垂直吸力F1,此時,該垂直吸力F1小於微型發光二極體(Micro LED)與載體基板之間的黏合力F2,舉例來說,當該每個彈性微吸盤下端受壓力而被撐開而吸附在微型發光二極體(Micro LED)頂面時,該每個彈性微吸盤與每個微型發光二極體(Micro LED)產生一垂直吸力F1,此時,該垂直吸力F1小於微型發光二極體(Micro LED)與載體基板之間的黏合力F2; (2) A stamp is provided for adsorbing and picking up a micro-light-emitting diode (Micro LED) on a carrier substrate. The stamp has at least one elastic micro-suction cup, and the lower end of each elastic micro-suction cup is in a concave arc-shaped structure. When a predetermined pressure is applied to the stamp, each elastic micro-suction cup will vertically contact the top surface of the micro-light-emitting diode (Micro LED) on the carrier substrate. When the concave arc-shaped structure at the lower end of each elastic micro-suction cup is pressed and spread open, the contact area with the top surface of the micro-light-emitting diode (Micro LED) is increased, so that each elastic micro-suction cup and each micro-light-emitting diode (Micro LED) generate a vertical suction force F1. At this time, the vertical suction force F1 is less than the micro-light-emitting diode (Micro LED). The adhesive force F2 between the micro LED and the carrier substrate. For example, when the lower end of each elastic micro suction cup is pushed open by pressure and adsorbed on the top surface of the micro LED, each elastic micro suction cup and each micro LED generate a vertical suction force F1. At this time, the vertical suction force F1 is smaller than the adhesive force F2 between the micro LED and the carrier substrate;
(3)提供一第一熱源,可用預定溫度透過載體基板對第一結合層提供點、局部或全面性的加熱,使該被選擇加熱的第一結合層由固態轉為液態,此時,步驟(1)該每個微型發光二極體(Micro LED)與載體基板之間黏合力會下降F2,且該下降後的黏合力F'下降至小於步驟(2)該每個彈性微吸盤與每個微型發光二極體(Micro LED)產生的垂直吸力F1時,該每個微型發光二極體(Micro LED)即可被該每個彈性微吸盤吸附而脫離載體基板,使該被選擇的微型發光二極體(Micro LED)可以容易從載體基板上被拾取,舉例來說,當載體基板 上第一結合層加熱使其轉為液態時,該微型發光二極體(Micro LED)與載體基板之間的黏合力會由F2下降至F2',當黏合力F2'小於該彈性微吸盤與微型發光二極體(Micro LED)之間垂直吸力F1時,該微型發光二極體(Micro LED)即可被該彈性微吸盤吸附而脫離載體基板,使該被選擇的微型發光二極體(Micro LED)可以容易從載體基板上被拾取; (3) providing a first heat source, which can provide point, local or overall heating to the first bonding layer through the carrier substrate at a predetermined temperature, so that the first bonding layer selected to be heated changes from a solid state to a liquid state. At this time, the adhesive force between each micro light-emitting diode (Micro LED) and the carrier substrate in step (1) decreases by F2, and when the adhesive force F' after the decrease decreases to less than the vertical suction force F1 generated by each elastic micro suction cup and each micro light-emitting diode (Micro LED) in step (2), each micro light-emitting diode (Micro LED) can be adsorbed by each elastic micro suction cup and detached from the carrier substrate, so that the selected micro light-emitting diode (Micro LED) The micro LED can be easily picked up from the carrier substrate. For example, when the first bonding layer on the carrier substrate is heated to turn into a liquid state, the adhesive force between the micro LED and the carrier substrate will decrease from F2 to F2'. When the adhesive force F2' is less than the vertical suction force F1 between the elastic micro suction cup and the micro LED, the micro LED can be adsorbed by the elastic micro suction cup and detached from the carrier substrate, so that the selected micro LED can be easily picked up from the carrier substrate;
(4)提供一目標基板,用以接收來自載體基板上的微型發光二極體(Micro LED),該目標基板上有固態的第二結合層,該固態的第二結合層與目標基板有一黏合力,該第二結合層允許被加熱由固態轉為半固態或液態,不加熱時可以返回固態; (4) Providing a target substrate for receiving the micro light-emitting diode (Micro LED) from the carrier substrate, the target substrate having a solid second bonding layer, the solid second bonding layer having an adhesive force with the target substrate, the second bonding layer being allowed to be heated to change from a solid state to a semi-solid state or a liquid state, and returning to a solid state when not heated;
(5)提供一第二熱源,可用預定溫度透過目標基板對第二結合層提供點、局部或全面性的加熱,將該被選擇加熱的第二結合層可以由固態轉為液態,舉例來說,當該目標基板上第二結合層未加熱為固態時,第二結合層與目標基板有一黏合力F3,此時,該黏合力F3大於步驟(2)該垂直吸力F1,而該第二結合層被加熱時轉為液態,該第二結合層與目標基板之間形的黏合力由F3下降至F3',此時,該黏合力F3'小於步驟(2)該垂直吸力F1,又當該第二結合層降溫至室溫,返回至固態時,該第二結合層與目標基板的黏合力可以由F3'回升至F3,此時,該黏合力F3大於(2)該垂直吸力F1; (5) providing a second heat source, which can provide point, local or overall heating to the second bonding layer through the target substrate at a predetermined temperature, so that the second bonding layer that is selectively heated can be converted from a solid state to a liquid state. For example, when the second bonding layer on the target substrate is not heated to a solid state, the second bonding layer and the target substrate have an adhesion force F3. At this time, the adhesion force F3 is greater than the vertical suction force F1 in step (2), and the second bonding layer is preferably heated to a liquid state. When the second bonding layer is heated, it turns into liquid state, and the bonding force between the second bonding layer and the target substrate decreases from F3 to F3'. At this time, the bonding force F3' is less than the vertical suction force F1 in step (2). When the second bonding layer is cooled to room temperature and returns to a solid state, the bonding force between the second bonding layer and the target substrate can rise from F3' to F3. At this time, the bonding force F3 is greater than (2) the vertical suction force F1;
(6)將步驟(3)該被每個彈性微吸盤吸附拾取的每個微型發光二極體(Micro LED)轉印結合至目標基板上呈液態的第二結合層上,再停止第二熱源加熱,使該目標基板上的第二結合層返回至固態,此時,該第二結合層與目標基板之間的黏合力返回至步驟(4)黏合力F3,且該黏合力F3當大於步驟(2)該每個彈性微吸盤與每個微型發光二極體(Micro LED)產生垂直吸力F1時,該每個 微型發光二極體(Micro LED)即可從每個彈性微吸盤脫離,使該每個微型發光二極體(Micro LED)透過第二結合層被固定在目標基板上,完成微型發光二極體(Micro LED)的轉移。 (6) Each micro-LED adsorbed and picked up by each elastic micro-suction cup in step (3) is transferred and bonded to the second bonding layer in liquid state on the target substrate, and then the second heat source is stopped to heat, so that the second bonding layer on the target substrate returns to a solid state. At this time, the bonding force between the second bonding layer and the target substrate returns to the bonding force F3 in step (4), and when the bonding force F3 is greater than the vertical suction force F1 generated by each elastic micro-suction cup and each micro-LED in step (2), each micro-LED can be detached from each elastic micro-suction cup, so that each micro-LED can be LED) is fixed on the target substrate through the second bonding layer to complete the transfer of micro LED.
在本發明一實施例中,其中,該載體基板為矽基板或藍寶石基板。另外,適用本發明載體基板上的第一結合層,例如LuxVue專利案US 2013/0127020A1一種靜電轉移方法中所公開的結合層,其公開說明一種微型發光二極體(Micro LED)以結合層(或稱為穩定層)與載體基板接合結構。另外,也可以使用X-Celeprint台灣專利I659475號的聚合物層作為本發明一實施例的第一結合層。 In one embodiment of the present invention, the carrier substrate is a silicon substrate or a sapphire substrate. In addition, the first bonding layer on the carrier substrate of the present invention is applicable, such as the bonding layer disclosed in LuxVue patent US 2013/0127020A1, which discloses a micro light-emitting diode (Micro LED) bonding structure with a bonding layer (or stabilizing layer) and a carrier substrate. In addition, the polymer layer of X-Celeprint Taiwan Patent No. I659475 can also be used as the first bonding layer of an embodiment of the present invention.
在本發明一實施例中,該載體基板上第一結合層為溫度敏感型結晶聚合物或無機銲錫,該第一結合層的固態溫度為 40℃,液態溫度 70℃。 In one embodiment of the present invention, the first bonding layer on the carrier substrate is a temperature-sensitive crystalline polymer or an inorganic solder, and the solid state temperature of the first bonding layer is 40℃ , liquid temperature 70℃ .
為了提供微型發光二極體(Micro LED)容易從載體基板上釋放,在本發明一實施例中,該第一熱源的加熱方式為熱板加熱或照射加熱,加熱溫度介於50~150℃。較佳第一熱源為熱板加熱。 In order to facilitate the release of the micro LED from the carrier substrate, in one embodiment of the present invention, the first heat source is heated by a hot plate or irradiated, and the heating temperature is between 50 and 150°C. The preferred first heat source is hot plate heating.
在本發明一實施例中,其中,該目標基板為驅動電路基板或其他顯示器基板。 In one embodiment of the present invention, the target substrate is a drive circuit substrate or other display substrate.
為了提供微型發光二極體(Micro LED)結合固定在目標基板上,在本發明一實施例中,該目標基板上第二結合層為為具導電特性之溫度敏感型結晶聚合物或無機銲錫,該第二結合層包括一導電粒子、一溫度敏感型結晶聚合物及一添加物組成。 In order to provide a micro light-emitting diode (Micro LED) to be bonded and fixed on a target substrate, in one embodiment of the present invention, the second bonding layer on the target substrate is a temperature-sensitive crystalline polymer or inorganic solder with conductive properties, and the second bonding layer includes a conductive particle, a temperature-sensitive crystalline polymer and an additive.
在本發明一實施例中,前述該導電粒子選自於金屬、金屬合 金、各向異性導電顆粒或上述至少一種的組合。較佳為導電粒子為錫、銅、金。 In one embodiment of the present invention, the conductive particles are selected from metals, metal alloys, anisotropic conductive particles or a combination of at least one of the above. Preferably, the conductive particles are tin, copper or gold.
在本發明一實施例中,前述該溫度敏感型結晶聚合物,由主鏈、多個可結晶的側鏈和連接到聚合物上的多個雜原子構成,其中,所述溫度敏感型結晶聚合物包含下式的重複單元(I) In one embodiment of the present invention, the aforementioned temperature-sensitive crystalline polymer is composed of a main chain, a plurality of crystallizable side chains, and a plurality of heteroatoms connected to the polymer, wherein the temperature-sensitive crystalline polymer comprises repeating units of the following formula (I)
在本發明一實施例中,該添加物選自於聚合的催化劑、光聚合引發劑抗氧化劑或上述至少一種的組合。較佳添加物為聚合催化劑。 In one embodiment of the present invention, the additive is selected from a polymerization catalyst, a photopolymerization initiator, an antioxidant, or a combination of at least one of the above. The preferred additive is a polymerization catalyst.
為了提供微型發光二極體(Micro LED)容易結合固定在目標基板上,在本發明一實施例中,其中,該第二熱源的加熱方式為熱板加熱或照射加熱,加熱溫度介於50~150℃。較佳第二熱源為熱板加熱。 In order to facilitate the bonding and fixing of the micro LED on the target substrate, in one embodiment of the present invention, the second heat source is heated by a hot plate or irradiated, and the heating temperature is between 50 and 150° C. The preferred second heat source is hot plate heating.
為了提供增加彈性微吸盤與微型發光二極體(Micro LED)之間的吸附力,在本發明一實施例中,其中,該彈性微吸盤下端的凹弧形狀結構為圓形凹弧或橢圓形凹弧。較佳為圓形凹弧。藉由此凹弧形狀結構設計,可以大幅增加與微型發光二極體(Micro LED)之間的吸附力,達到吸附拾取 微型發光二極體(Micro LED)的目的。 In order to increase the adsorption force between the elastic micro suction cup and the micro LED, in one embodiment of the present invention, the concave arc structure at the lower end of the elastic micro suction cup is a circular concave arc or an elliptical concave arc. A circular concave arc is preferred. With this concave arc structure design, the adsorption force between the micro LED and the micro LED can be greatly increased, so as to achieve the purpose of adsorbing and picking up the micro LED.
為了提供較佳拾取微型發光二極體(Micro LED)的吸附力,在本發明一實施例中,其中,該彈性微吸盤的下端的凹弧形狀結構受壓力撐開時的寬度不大於(小於或等於)微型發光二極體(Micro LED)的頂面寬度。 In order to provide better adsorption force for picking up micro light-emitting diodes (Micro LEDs), in one embodiment of the present invention, the width of the concave arc-shaped structure at the lower end of the elastic micro suction cup when stretched open by pressure is not greater than (less than or equal to) the top width of the micro light-emitting diode (Micro LED).
10:載體基板 10: Carrier substrate
11:微型發光二極體 11: Micro LEDs
12:電極 12: Electrode
13:第一結合層 13: First bonding layer
20:印模 20: Impression
21:彈性微吸盤 21: Elastic micro suction cup
22:凹弧形狀結構 22: Concave arc structure
30:第一熱源 30: The first heat source
40:目標基板 40: Target substrate
41:第二結合層 41: Second bonding layer
50:第二熱源 50: Second heat source
60:冷卻 60: Cool down
圖1-A為本發明轉移流程示意圖,用以說明第一結合層13與載體基板10之黏合力F2示意。
Figure 1-A is a schematic diagram of the transfer process of the present invention, used to illustrate the bonding force F2 between the
圖1-B為本發明彈性微吸盤下壓的轉移流程示意圖,用以說明第一結合層13與載體基板10之黏合力F2及彈性微吸盤21與每個微型發光二極體(Micro LED11)接觸產生一垂直吸力F1,此時F2>F1。
FIG1-B is a schematic diagram of the transfer process of the elastic micro suction cup of the present invention, which is used to illustrate the adhesion force F2 between the
圖1-C為本發明第一熱源透過載體基板對第一結合層加熱的轉移流程示意圖,用以說明利用第一熱源30透過載體基板10對第一結合層13加熱使第一結合層13由固態轉化為液態的示意。
FIG1-C is a schematic diagram of the transfer process of the first heat source of the present invention heating the first bonding layer through the carrier substrate, which is used to illustrate the schematic diagram of using the
圖1-D為本發明載體基板上第一結合層加熱轉化為液態的轉移流程示意圖,用以說明第一結合層13轉化為液態後與載體基板10之黏合力F2下降至F2',此時F1>F2',微型發光二極體11被彈性微吸盤21吸取示意。
FIG1-D is a schematic diagram of the transfer process of the first bonding layer on the carrier substrate of the present invention being heated and converted into a liquid state, which is used to illustrate that after the
圖1-E為本發明印模20至目標基板40的轉移流程示意圖,用以說明固態第二結合層41與目標基板40之黏合力F3示意。
FIG. 1-E is a schematic diagram of the transfer process of the
圖1-F為本發明印模20下壓及對目標基板的第二結合層加熱的轉移流程示意圖,用以說明對第二結合層41加熱使其轉化為液態後,再下壓印模20使微型發光二極體11與第二結合層41接觸,此時第二結合層41與目標基板40之黏合力F3下降至F3'示意。
FIG1-F is a schematic diagram of the transfer process of pressing down the
圖1-G為本發明第二結合層41不加溫冷的轉移流程示意圖,
用以說明停止第二熱源50加熱,讓溫度下降至常溫,使該目標基板40上的第二結合層41返回至固態,此時,該第二結合層41與目標基板40之間的黏合力由F3'返回至F3(F3>F3')示意。
FIG1-G is a schematic diagram of the transfer process of the
圖1-H為本發明第二結合層41返回至固態的轉移流程示意圖,用以說明第二結合層41返回至固態時,該第二結合層41與目標基板40之間的黏合力由F3'返回至F3(F3>F3'),且該黏合力F3大於該彈性微吸盤21與微型發光二極體(Micro LED)11之間的垂直吸力F1(F3>F1),使該每個微型發光二極體(Micro LED)11透過電極12與第二結合層41結合而被固定在目標基板40上示意。
FIG1-H is a schematic diagram of the transfer process of the
圖2-A為本發明彈性微吸盤21下壓距離示意圖,用以說明彈性微吸盤21下端與微型發光二極體11頂面高度的設計距離h1示意。
Figure 2-A is a schematic diagram of the downward pressing distance of the elastic
圖2-B為本發明彈性微吸盤21下壓吸附示意圖,用以說明而彈性微吸盤21觸摸微型發光二極體11頂面後,再下壓的設計距離h2示意。
Figure 2-B is a schematic diagram of the elastic
圖3-A為本發明彈性微吸盤下端凹弧形狀結構示意圖,用以說明彈性微吸盤21下端凹弧形狀結構22與微型發光二極體11頂面寬度及位置示意。
Figure 3-A is a schematic diagram of the concave arc-shaped structure at the lower end of the elastic micro suction cup of the present invention, which is used to illustrate the width and position of the concave arc-shaped
圖3-B為本發明彈性微吸盤下壓吸附結構示意圖,用以說明彈性微吸盤21下端凹弧形狀結構22接觸後被施壓撐開時與微型發光二極體頂面寬度及位置示意。
Figure 3-B is a schematic diagram of the elastic micro suction cup downward pressure adsorption structure of the present invention, which is used to illustrate the width and position of the top surface of the micro light-emitting diode when the concave arc-shaped
為了清楚說明本發明能夠達到的目的,以下舉一較較佳實施例對本發明微吸盤轉移微型發光二極體(Micro LED)方法進一步說明功效及特徵。 In order to clearly illustrate the purpose that the present invention can achieve, a better embodiment is given below to further illustrate the efficacy and features of the micro-suction cup transfer micro-light-emitting diode (Micro LED) method of the present invention.
請參閱圖1-A至圖1-H所示,首先敘明,在本實施例中所使用
的各種設備、材料及轉移操作設定如下,其中:載體基板10為矽基板微型發光二極體11為Micro LED第一結合層13為無機銲錫第一熱源30為熱板,第一熱源30的加溫度介於50~150℃目標基板40為顯示基板第二結合層41為具導電性之無機銲錫第二熱源50為熱板,第二熱源50的加溫度介於50~150℃ Micro-sucke傳輸系統:
Please refer to Figures 1-A to 1-H. First, the various equipment, materials and transfer operation settings used in this embodiment are as follows, where: the
F1:Micro-sucker和Micro-LED之間的吸力 F1: Suction between Micro-sucker and Micro-LED
F2:不加熱,Micro-LED與Bonding Layer-1之間的粘合力 F2: Adhesion between Micro-LED and Bonding Layer-1 without heating
F2':加熱時,Micro-LED與Bonding Layer-1之間的粘合力 F2': Adhesion between Micro-LED and Bonding Layer-1 when heated
F3:不加熱,Micro-LED與Bonding Layer-2之間的粘合力 F3: Adhesion between Micro-LED and Bonding Layer-2 without heating
F3':加熱時,Micro-LED與Bonding Layer-2之間的粘合力 F3': Adhesion between Micro-LED and Bonding Layer-2 when heated
如圖2-A所示,所述彈性微吸盤21下端與微型發光二極體11頂面高度的設計距離為h1,而彈性微吸盤21觸摸微型發光二極體11頂面後,再下壓的距離h2=1~5mm,如圖2-B所示,因此,彈性微吸盤21吸附拾取的下移距離為h1+h2(1~5mm);例如設定距離h1=1000mm時,設計吸附移動(向下移動)距離為1000mm+1~5mm,本實施例用3mm×3mm的微型發光二極體時,可設計吸附移動(向下移動)距離為1001~1005mm之間,在本發明的另一實施例中,彈性微吸盤21與微型發光二極體11的吸附力F1,取決於微型發光二極體11的大小而定,本發明彈性微吸盤的吸附距離為1~5mm,而在本發明較佳實施例中,設定距離為2mm,因此,彈性微吸盤21向下移動的設計距離為1002mm。
As shown in FIG2-A, the designed distance between the lower end of the elastic
如圖3-A所示,所述彈性微吸盤21下端的凹弧形狀結構22的
最大寬度L2,未加壓時L2是微型發光二極體的頂面寬度L1的5/10~6/10之間,被撐開的最大寬度L2',如圖3-B所示,L2'是微型發光二極體的頂面寬度L1的80/100~95/100之間,例如微型發光二極體(Micro LED)為3mm×3mm;彈性微吸盤下端的凹弧形狀結構未加壓時的最大寬度1.5~1.8mm,被撐開的最大寬度為2.4~2.85mm。
As shown in FIG3-A , the maximum width L2 of the concave arc-shaped
本發明一種微吸盤轉移微型發光二極體(Micro LED)方法,該方法的步驟,如圖1-A~圖1-H的流程示意圖所示,步驟包含: The present invention discloses a method for transferring a micro light-emitting diode (Micro LED) by using a micro suction cup. The steps of the method are shown in the process diagrams of FIG. 1-A to FIG. 1-H. The steps include:
(1)提供一載體基板10,如圖1-A所示,該載體基板10上預先形成有至少一個微型發光二極體(Micro LED)11,每個微型發光二極體(Micro LED)11下方有電極12,電極12以一固態第一結合層13固定在載體基板10上,各微型發光二極體11與載體基板10之間形成一預定的黏合力F2。
(1) Provide a
(2)提供一印模20,如圖1-A所示,該印模20上有至少一個彈性微吸盤21,每個彈性微吸盤21下端呈凹弧形狀結構22,對印模20施加預定的一壓力,如圖1-B所示,該每個彈性微吸盤21垂直觸壓到載體基板10上的微型發光二極體11頂面,使該每個彈性微吸盤21下端受壓力而被撐開至與微型發光二極體11頂面相同大小,而該彈性微吸盤21的凹弧形狀結構22會被撐開增加接觸面積,此時,該每個彈性微吸盤21與每個微型發光二極體(Micro LED)產生一垂直吸力F1,該垂直吸力F1小於微型發光二極體(Micro LED)11與載體基板10之間的黏合力F2;對該印模20中的彈性微吸盤21所施加的壓力大小,取決於該彈性微吸盤21向下移動距離,而該移動距離也可以因微型發光二極體(Micro LED)大小重量決定,在實施本發明時,只要該彈性微吸盤21向下移動距離,不讓彈性微吸盤21下端呈凹弧形狀結構22撐開時的寬度大於微發光二極體11的頂面寬度即可,如圖1-B所示。
(2) A
(3)提供一第一熱源30,如圖1-C所示,利用第一熱源30透過載體基板10對第
一結合層13加熱,在實施時,可以依照預定要被轉移的微型發光二極體(Micro LED)的數量選擇加熱方式,例如選擇單顆或一單元數量轉移時可以選擇照射方式加熱,全部轉移或一區塊數量轉移時可以選擇時熱板加熱,利用第一熱源30以70~150℃的溫度對該被選擇加熱的第一結合層13由固態轉為液態,此時,該每個微型發光二極體(Micro LED)11與載體基板10之間黏合力會由F2下降至F2’(F2>F2’),當該黏合力F2’下降至小於每個黏彈性微吸盤21與每個微型發光二極體(Micro LED)11產生的垂直吸力F1時(F1>F2’),如圖1-D所示,該每個微型發光二極體(Micro LED)11即可被該每個彈性微吸盤21吸附而脫離載體基板10,使該被選擇的微型發光二極體(Micro LED)11可以容易從載體基板10上被拾取。
(3) A
(4)提供一目標基板40,如圖1-E所示,該目標基板40上有固態的第二結合層41,該呈固態的第二結合層41與目標基板40有一黏合力F3。
(4) Provide a
(5)提供一第二熱源50,如圖1-F所示,利用第二熱源50以70~150℃的溫度對該被選擇加熱的第二結合層41可以由固態轉為液態,此時,該第二結合層41與目標基板40之間的黏合力F3會下降至F3’(F3>F3’)。
(5) Provide a
(6)如圖1-G所示,將該被每個彈性微吸盤21吸附拾取的每個微型發光二極體(Micro LED)11轉印結合至目標基板40上呈液態的第二結合層41上,再停止第二熱源50加熱,讓溫度下降至常溫,使該目標基板40上的第二結合層41返回至固態,此時,該第二結合層41與目標基板40之間的黏合力由F3’返回至F3(F3>F3’),且該黏合力F3大於該彈性微吸盤21與微型發光二極體(Micro LED)11之間的垂直吸力F1(F3>F1),使該每個微型發光二極體(Micro LED)11透過電極12與第二結合層41結合而被固定在目標基板40上,而脫離該每個彈性微吸盤21,完成微型發光二極體(Micro LED)11的轉移,如圖1-H所示。
(6) As shown in FIG. 1-G , each micro light-emitting diode (Micro LED) 11 adsorbed and picked up by each elastic
在前述較佳實施例的一種微吸盤轉移微型發光二極體 (Micro LED)方法中,透過印模上的彈性微吸盤的特殊凹弧形狀結構設計,確實可以大幅增加與微型發光二極體(Micro LED)之間的吸附力,達到吸附拾取轉移微型發光二極體(Micro LED)的目的。 In the aforementioned preferred embodiment of a micro suction cup transfer method of micro LED, the special concave arc-shaped structure design of the elastic micro suction cup on the stamp can greatly increase the adsorption force between the micro LED and the micro LED, thereby achieving the purpose of adsorption, picking up and transferring the micro LED.
以上所述的實施例為本發明的優選實施方式進行描述,並非對本發明的範圍進行限定,在不脫離本發明設計精神的前提下,本領域普通技術人員對本發明的技術方案做出的各種變形和改進,均應落入本發明權利要求書確定的保護範圍內。 The above-mentioned embodiments are descriptions of the preferred implementation methods of the present invention and do not limit the scope of the present invention. Under the premise of not departing from the design spirit of the present invention, various modifications and improvements made by ordinary technicians in this field to the technical solution of the present invention should fall within the scope of protection determined by the claims of the present invention.
10:載體基板 10: Carrier substrate
11:微型發光二極體 11: Micro LEDs
12:電極 12: Electrode
13:第一結合層 13: First bonding layer
20:印模 20: Impression
21:彈性微吸盤 21: Elastic micro suction cup
22:凹弧形狀結構 22: Concave arc structure
30:第一熱源 30: The first heat source
Claims (8)
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