TW202501763A - Lead frame material and manufacturing method thereof, and semiconductor package - Google Patents
Lead frame material and manufacturing method thereof, and semiconductor package Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
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Abstract
本發明的提供一種導線架材料及其製造方法、以及使用了該導線架材料之半導體封裝體,該導線架材料即便在預測為極端的使用環境的熱循環的情況下,仍能夠改善封裝體的氣密性且不易發生落粉。 導線架材料1具有導電性的基體2、表面覆膜3及側面覆膜4,表面覆膜3形成於基體2的至少一部分的表面21及背面22中的一面或雙面,側面覆膜4與表面覆膜3相鄰且形成於基體2的至少一部分的側面23,表面覆膜3及側面覆膜4皆具有經粗糙化的上表面30、40,當將表面覆膜3的平均粗糙度高度設為h 1並將側面覆膜4的平均粗糙度高度設為h 2時,側面覆膜4的平均粗糙度高度h 2相對於表面覆膜3的平均粗糙度高度h 1之比h 2/h 1為1.35以上。 The present invention provides a lead frame material and a manufacturing method thereof, and a semiconductor package using the lead frame material. The lead frame material can improve the airtightness of the package and is less likely to cause powder shedding even in a thermal cycle predicted to be an extreme use environment. The lead frame material 1 has a conductive substrate 2, a surface coating 3 and a side coating 4. The surface coating 3 is formed on one or both of a surface 21 and a back surface 22 of at least a portion of the substrate 2. The side coating 4 is adjacent to the surface coating 3 and is formed on a side surface 23 of at least a portion of the substrate 2. The surface coating 3 and the side coating 4 both have roughened upper surfaces 30 and 40. When the average roughness height of the surface coating 3 is set to h1 and the average roughness height of the side coating 4 is set to h2 , the ratio of the average roughness height h2 of the side coating 4 to the average roughness height h1 of the surface coating 3 is h2 / h1 , which is greater than 1.35.
Description
本發明關於一種導線架材料及其製造方法、以及半導體封裝體。更具體而言,關於一種導線架材料及其製造方法、以及使用該導線架材料製成之半導體封裝體,該導線架材料在導電性的基體的表面及側面具有覆膜(例如電鍍覆層),該覆膜具有特定形狀,且在樹脂密封型半導體裝置中將半導體元件相互電性連接。The present invention relates to a lead frame material, a method for manufacturing the same, and a semiconductor package. More specifically, the present invention relates to a lead frame material, a method for manufacturing the same, and a semiconductor package made using the lead frame material. The lead frame material has a coating (e.g., electroplating coating) on the surface and side of a conductive substrate, the coating having a specific shape, and electrically connecting semiconductor elements to each other in a resin-sealed semiconductor device.
電子機器和電氣機器等裝配有許多樹脂密封型半導體裝置。該等樹脂密封型半導體裝置由將藉由導線等相互電性連接之半導體元件、與導線架材料利用壓模樹脂加以密封而成。在這種樹脂密封型半導體裝置中,為了對導線架材料賦予接合性、耐熱性、密封性等功能,大多會施行金(Au)、銀(Ag)、錫(Sn)等的外裝鍍覆。Many resin-sealed semiconductor devices are installed in electronic and electrical equipment. These resin-sealed semiconductor devices are made by sealing semiconductor elements and lead frame materials electrically connected to each other by wires with a die-cast resin. In these resin-sealed semiconductor devices, in order to give the lead frame materials functions such as bonding, heat resistance, and sealing, they are often coated with gold (Au), silver (Ag), tin (Sn), etc.
近年來,為了簡化組裝步驟及降低成本,使用一種導線架材料(預電鍍導線架,Pre-Plated Leadframe),其預先在導線框架材料的表面上施行用於提高在對印刷基板藉由焊接等實行安裝時的與焊料之潤濕性的作法之鍍覆(例如,鎳/鈀/金(Ni/Pd/Au))(例如,參照專利文獻1)。In recent years, in order to simplify the assembly process and reduce costs, a lead frame material (pre-plated lead frame) is used, in which a coating (for example, nickel/palladium/gold (Ni/Pd/Au)) is pre-applied on the surface of the lead frame material to improve the wettability with solder when mounting on a printed circuit board by soldering, etc. (for example, refer to patent document 1).
此外,為了提高樹脂密封型半導體裝置中的導線架材料與壓模樹脂之密接性,提出有在導線架材料的表面或側面形成由經粗糙化的鍍覆層所構成之覆膜的技術(例如,參照專利文獻2、專利文獻3)。Furthermore, in order to improve the adhesion between the lead frame material and the molding resin in the resin-sealed semiconductor device, a technique has been proposed for forming a coating composed of a roughened coating layer on the surface or side of the lead frame material (for example, see Patent Document 2 and Patent Document 3).
這些將鍍覆層進行粗糙化的技術,藉由將導線架材料的鍍覆層進行粗糙化,而期待(1)增加導線架材料與壓模樹脂之黏接面積的效果、(2)使壓模樹脂容易被粗糙化後之鍍膜表面的凹凸咬入之效果(也就是定錨效果)等。These technologies for roughening the coating layer are expected to achieve the following effects: (1) increasing the bonding area between the lead frame material and the die-casting resin, and (2) making it easier for the die-casting resin to bite into the roughened coating surface (i.e., anchoring effect).
藉由該等,會提升壓模樹脂對於導線架材料之密接性,而成為可防止導線架材料與壓模樹脂之間的剝離,於是樹脂密封型半導體裝置的可靠度有所提升。 (先前技術文獻) (專利文獻) By doing so, the adhesion of the mold resin to the lead frame material is improved, and the lead frame material and the mold resin are prevented from peeling off, thereby improving the reliability of the resin-sealed semiconductor device. (Prior technical literature) (Patent literature)
專利文獻1:日本專利第2543619號公報 專利文獻2:日本專利第6736719號公報 專利文獻3:日本專利第6479265號公報 Patent document 1: Japanese Patent No. 2543619 Patent document 2: Japanese Patent No. 6736719 Patent document 3: Japanese Patent No. 6479265
[發明所欲解決的問題] 藉由如上所述之鍍覆表面的粗糙化,導線架材料的樹脂密接性相較於以往確實已有所提升。 然而,伴隨近年來所要求的半導體封裝體的小型低高度化,可預測到封裝體的氣密性的合格等級會變得更嚴苛。 例如,已知有如下情況:預設為極端的使用環境的熱循環,例如當重複50次地實行將在-50℃中保持30分鐘後在105℃中保持30分鐘的循環這樣的熱循環試驗時,樹脂與導線架之間變得會產生間隙,封裝體的氣密性降低而成為造成不良的原因。這被認為是因為如下原因:以往尚未廣泛使用的更小型的QFN(Quad Flat Non-Leaded Package,四方無導線構裝)型及SOP(Small Outline Package,小輪廓包)型等的封裝體變得廣泛使用,除了壓模樹脂與導線架材料的黏接面積已有減少之外,在車載用途等的使用環境所造成的溫度負荷也已有增加。尤其是,在導線架材料的側面處,因導線架材料與壓模樹脂之間的間隙產生而造成的封裝體的氣密性降低變得顯著。如此可知,針對封裝體的氣密性仍有改善的空間。 [Problem to be solved by the invention] By roughening the coating surface as described above, the resin adhesion of the lead frame material has indeed improved compared to the past. However, with the recent demand for smaller and lower-profile semiconductor packages, it is expected that the pass level of the airtightness of the package will become more stringent. For example, it is known that when a thermal cycle test is performed with a preset extreme use environment, such as a cycle of keeping at -50°C for 30 minutes and then keeping at 105°C for 30 minutes, a gap is generated between the resin and the lead frame, and the airtightness of the package is reduced, which causes a defect. This is believed to be due to the following reasons: smaller QFN (Quad Flat Non-Leaded Package) and SOP (Small Outline Package) packages, which were not widely used before, have become widely used. In addition to the reduction in the bonding area between the mold resin and the lead frame material, the temperature load caused by the use environment in automotive applications has also increased. In particular, the reduction in the airtightness of the package due to the gap between the lead frame material and the mold resin on the side of the lead frame material has become significant. It can be seen that there is still room for improvement in the airtightness of the package.
尤其是,專利文獻1中,在導線架的形成有外導線之Pd或Pd合金覆膜上,形成厚度0.001 μm~0.1 μm的Au鍍覆覆膜,藉此來改善導線架的構裝特性,但是導線架材料的與壓模樹脂的密接性低,所以在與壓模樹脂的界面容易產生剝離。此外,專利文獻2中,控制導線架材料的至少上表面或側面中的晶向來形成針狀的突起群,藉此使導線架材料與壓模樹脂的密接性提升,但是在高溫環境和施加熱衝擊的環境下,與壓模樹脂的黏接面積容易發生自較小的側面的壓模樹脂的剝離。此外,專利文獻3中,針對粗糙化粒子的突起物,將在粗糙化覆膜的厚度方向截面進行測定時的最大寬度,設為相對於位於比最大寬度的測定位置更靠導電性基體側的下側部分測定時的最小寬度成為1倍~5倍的形狀,藉此改善與壓模樹脂的密接性,但是針對預測為更極端的使用環境時的封裝體的氣密性,仍謀求進一步的改善。In particular, in Patent Document 1, an Au plating film with a thickness of 0.001 μm to 0.1 μm is formed on a Pd or Pd alloy film on which an outer lead is formed on a lead frame, thereby improving the packaging characteristics of the lead frame. However, the lead frame material has low adhesion to the die-casting resin, so that peeling easily occurs at the interface with the die-casting resin. In addition, in Patent Document 2, the crystal orientation of at least the upper surface or the side surface of the lead frame material is controlled to form a needle-shaped protrusion group, thereby improving the adhesion between the lead frame material and the die-casting resin. However, in a high temperature environment or an environment where a thermal shock is applied, peeling of the die-casting resin from the smaller side surface of the bonding area with the die-casting resin easily occurs. Furthermore, in Patent Document 3, with respect to the protrusions of the roughened particles, the maximum width when measured in a cross section in the thickness direction of the roughened coating is set to a shape that is 1 to 5 times the minimum width when measured at a lower portion closer to the conductive substrate than the measurement position of the maximum width, thereby improving the adhesion to the molding resin. However, further improvement is still sought with respect to the airtightness of the package in an environment predicted to be used in a more extreme manner.
除此之外,若為了進一步改善與壓模樹脂的密接性而增加導線架材料的整面的粗糙度,在導線架材料的表面及背面處,會有變得容易發生部分的粗糙化層脫落、即所謂的落粉的傾向。若發生來自粗糙化層的落粉,將壓模樹脂注入於模具時的阻力會變大,還會由於壓模樹脂對於導線架材料的濕潤性降低等,而造成將導線架材料利用壓模樹脂進行密封時的生產性降低。因此,期望導線架材料的表面及背面處的落粉不易發生。In addition, if the roughness of the entire surface of the lead frame material is increased in order to further improve the adhesion with the die-casting resin, the roughened layer tends to partially fall off on the surface and back of the lead frame material, which is called powder falling. If powder falling from the roughened layer occurs, the resistance when the die-casting resin is injected into the mold will increase, and the wettability of the die-casting resin to the lead frame material will decrease, which will cause the productivity to decrease when the lead frame material is sealed with the die-casting resin. Therefore, it is desired that powder falling on the surface and back of the lead frame material is not easy to occur.
本發明的目的在於提供一種導線架材料及其製造方法、以及使用了該導線架材料之半導體封裝體,該導線架材料即便在預測為極端的使用環境的熱循環的情況下,仍能夠改善封裝體的氣密性且不易發生落粉。 [解決問題的技術手段] The purpose of the present invention is to provide a lead frame material and a method for manufacturing the same, as well as a semiconductor package using the lead frame material, wherein the lead frame material can improve the airtightness of the package and is less likely to cause powder shedding even in a thermal cycle predicted to be an extreme use environment. [Technical means for solving the problem]
針對上述以往的技術問題致力於研究,結果發明人確認到如下見解:著重於針對在具有表面覆膜與側面覆膜之導線架材料來控制表面覆膜及側面覆膜的平均粗糙度高度,而與處於熱循環後的樹脂的密接性變化,藉此封裝體的氣密性進行變化,該表面覆膜形成於基體的至少一部分的表面及背面中的一面或雙面,該側面覆膜與表面覆膜相鄰且形成於基體的至少一部分的側面,尤其是,當將表面覆膜的平均粗糙度高度設為h 1並將側面覆膜的平均粗糙度高度設為h 2時,將側面覆膜的平均粗糙度高度h 2相對於表面覆膜的平均粗糙度高度h 1之比h 2/h 1設為1.35以上,可藉此可獲得一種導線架材料,其不易發生落粉且即便在預測為極端的使用環境的熱循環中,對樹脂的密接性仍高而藉此改善封裝體的氣密性。本發明是基於該見解完成者。 As a result of the research on the above-mentioned conventional technical problems, the inventors have confirmed the following viewpoint: focusing on controlling the average roughness height of the surface coating and the side coating in a lead frame material having a surface coating and a side coating, the adhesion with the resin after the heat cycle is changed, thereby changing the airtightness of the package body. The surface coating is formed on one or both of the surface and the back surface of at least a part of the substrate, and the side coating is adjacent to the surface coating and formed on the side surface of at least a part of the substrate. In particular, when the average roughness height of the surface coating is set to h1 and the average roughness height of the side coating is set to h2 , the ratio of the average roughness height h2 of the side coating to the average roughness height h1 of the surface coating is set to h2 /h By setting 1 to 1.35 or more, a lead frame material can be obtained which is less likely to cause powder shedding and has high adhesion to the resin even in a thermal cycle that is expected to be an extreme use environment, thereby improving the airtightness of the package. The present invention was completed based on this finding.
為了達成上述目的,本發明的主要構成如下。 (1) 一種導線架材料,其具有:導電性的基體;表面覆膜,其形成於前述基體的至少一部分的表面及背面中的一面或雙面;及,側面覆膜,其與前述表面覆膜相鄰且形成於前述基體的至少一部分的側面;該導線架材料中,前述表面覆膜及側面覆膜皆具有經粗糙化的上表面,當將前述表面覆膜的平均粗糙度高度設為h 1並將前述側面覆膜的平均粗糙度高度設為h 2時,前述側面覆膜的平均粗糙度高度h 2相對於前述表面覆膜的平均粗糙度高度h 1之比h 2/h 1為1.35以上。 (2) 如上述(1)所述之導線架材料,其中,前述表面覆膜的平均粗糙度高度h 1在0.5 μm以上且3.5 μm以下的範圍,並且前述側面覆膜的平均粗糙度高度h 2在1.0 μm以上且6.5 μm以下的範圍。 (3) 如上述(1)或(2)所述之導線架材料,其中,在前述表面覆膜的截面觀察,將利用假想線l 1與假想線n 1劃分出的第一測定面積中所佔的第一空隙率設為V 1,該假想線l 1為以通過前述表面覆膜的上表面的最高點的位置且相對於前述基體的表面平行的方式畫出者,該假想線n 1為以通過前述表面覆膜的上表面的最低點的位置且相對於前述基體的表面平行的方式畫出者,並在前述側面覆膜的截面觀察,將利用假想線l 2與假想線n 2劃分出的第二測定面積中所佔的第二空隙率設為V 2,該假想線l 2為以通過前述側面覆膜的上表面的最高點的位置且相對於前述基體的側面平行的方式畫出者,該假想線n 2為以通過前述側面覆膜的上表面的最低點的位置且相對於前述基體的側面平行的方式畫出者,此時,前述第二空隙率V 2相對於前述第一空隙率V 1之比V 2/V 1在0.50以上且0.91以下的範圍。 (4) 如上述(3)所述之導線架材料,其中,前述第一空隙率V 1及前述第二空隙率V 2皆在32%以上且64%以下的範圍。 (5) 如上述(1)~(4)中任一項所述之導線架材料,其中,前述基體由銅、銅合金、鐵、鐵合金、鋁或鋁合金所構成。 (6) 如上述(1)~(5)中任一項所述之導線架材料,其中,將前述基體的厚度設為T時,前述基體的厚度T相對於前述側面覆膜的平均粗糙度高度h 2之比(T/h 2比)在15.0以上且200.0以下的範圍。 (7) 如上述(1)~(6)中任一項所述之導線架材料,其中,前述表面覆膜及前述側面覆膜皆具有粗糙化層。 (8) 如上述(7)所述之導線架材料,其中,前述粗糙化層由銅、銅合金、鎳或鎳合金所構成。 (9) 如上述(7)或(8)所述之導線架材料,其中,前述粗糙化層為電鍍覆層。 (10) 如上述(7)~(9)中任一項所述之導線架材料,其中,前述表面覆膜及前述側面覆膜進一步具有形成於前述粗糙化層的上表面的至少一層的表面包覆層。 (11) 如上述(10)所述之導線架材料,其中,前述表面包覆層由具有與前述粗糙化層不同組成之金屬或合金所構成,該金屬或合金為:銅、銅合金、鎳、鎳合金、鈷、鈷合金、鈀、鈀合金、銠、銠合金、釕、釕合金、鉑、鉑合金、銥、銥合金、金、金合金、銀、銀合金、錫、錫合金、銦或銦合金。 (12) 一種導線架材料的製造方法,其為上述(1)~(11)中任一項所述之導線架材料的製造方法,該製造方法包含覆膜形成步驟,其藉由電鍍覆,於前述基體形成具有經粗糙化的上表面之前述表面覆膜及前述側面覆膜。 (13) 一種半導體封裝體,其具備導線架,該導線架是使用上述(1)~(11)中任一項所述之導線架材料形成者。 [發明的效果] In order to achieve the above-mentioned object, the main structure of the present invention is as follows. (1) A lead frame material comprising: a conductive substrate; a surface coating formed on one or both of the surface and the back of at least a portion of the substrate; and a side coating adjacent to the surface coating and formed on the side of at least a portion of the substrate; in the lead frame material, the surface coating and the side coating both have a roughened upper surface, and when the average roughness height of the surface coating is set to h1 and the average roughness height of the side coating is set to h2 , the ratio of the average roughness height h2 of the side coating to the average roughness height h1 of the surface coating is h2 / h1 of 1.35 or more. (2) The lead frame material as described in (1) above, wherein the average roughness height h1 of the surface coating is in the range of 0.5 μm to 3.5 μm, and the average roughness height h2 of the side coating is in the range of 1.0 μm to 6.5 μm. (3) A lead frame material as described in (1) or (2) above, wherein, when observing the cross section of the surface coating, a first porosity in a first measurement area divided by an imaginary line l1 and an imaginary line n1 is set to V1 , the imaginary line l1 is drawn through the highest point of the upper surface of the surface coating and parallel to the surface of the substrate, and the imaginary line n1 is drawn through the lowest point of the upper surface of the surface coating and parallel to the surface of the substrate, and when observing the cross section of the side coating, a second porosity in a second measurement area divided by an imaginary line l2 and an imaginary line n2 is set to V2, the imaginary line l1 is drawn through the highest point of the upper surface of the surface coating and parallel to the surface of the substrate, and the imaginary line n1 is drawn through the lowest point of the upper surface of the surface coating and parallel to the surface of the substrate, and the imaginary line l2 is drawn through the lowest point of the upper surface of the surface coating and parallel to the surface of the substrate, and the imaginary line n2 ... 2 is drawn through the highest point of the upper surface of the side coating and in parallel with the side surface of the substrate, and the imaginary line n2 is drawn through the lowest point of the upper surface of the side coating and in parallel with the side surface of the substrate, and at this time, the ratio V2 / V1 of the second porosity V2 to the first porosity V1 is in the range of 0.50 to 0.91. (4) The lead frame material as described in (3) above, wherein the first porosity V1 and the second porosity V2 are both in the range of 32% to 64%. (5) The lead frame material as described in any one of (1) to (4) above, wherein the substrate is composed of copper, copper alloy, iron, iron alloy, aluminum or aluminum alloy. (6) A lead frame material as described in any one of (1) to (5) above, wherein, when the thickness of the substrate is set to T, the ratio of the thickness T of the substrate to the average roughness height h2 of the side coating (T/h2 ratio ) is in the range of greater than 15.0 and less than 200.0. (7) A lead frame material as described in any one of (1) to (6) above, wherein both the surface coating and the side coating have a roughening layer. (8) A lead frame material as described in (7) above, wherein the roughening layer is composed of copper, copper alloy, nickel or nickel alloy. (9) A lead frame material as described in (7) or (8) above, wherein the roughening layer is an electroplated coating. (10) A lead frame material as described in any one of (7) to (9) above, wherein the surface coating and the side coating further have at least one surface coating layer formed on the upper surface of the roughened layer. (11) A lead frame material as described in (10) above, wherein the surface coating layer is composed of a metal or alloy having a composition different from that of the roughened layer, and the metal or alloy is: copper, copper alloy, nickel, nickel alloy, cobalt, cobalt alloy, palladium, palladium alloy, rhodium, rhodium alloy, ruthenium, ruthenium alloy, platinum, platinum alloy, iridium, iridium alloy, gold, gold alloy, silver, silver alloy, tin, tin alloy, indium or indium alloy. (12) A method for manufacturing a lead frame material, which is a method for manufacturing a lead frame material as described in any one of (1) to (11) above, the method comprising a coating forming step, wherein the surface coating and the side coating are formed on the substrate by electroplating. (13) A semiconductor package having a lead frame, the lead frame being formed using the lead frame material as described in any one of (1) to (11) above. [Effect of the Invention]
根據本發明,能夠提供一種導線架材料及其製造方法、以及使用了該導線架材料之半導體封裝體,該導線架材料即便在處於預測為極端的使用環境的熱循環的情況下,仍能夠改善封裝體的氣密性且不易發生落粉。According to the present invention, a lead frame material and a method for manufacturing the same, as well as a semiconductor package using the lead frame material can be provided. The lead frame material can improve the airtightness of the package and is less likely to cause powder shedding even in a thermal cycle that is expected to be an extreme usage environment.
以下,詳細地說明本發明的導線架材料及其製造方法、以及半導體封裝體的較佳實施形態。The lead frame material and its manufacturing method, as well as the preferred embodiments of the semiconductor package of the present invention are described in detail below.
<針對導線架材料> 第1圖是顯示本發明的實施形態的導線架材料的概要的截面圖。如第1圖所示,本發明的導線架材料1具有導電性的基體2、表面覆膜3及側面覆膜4,表面覆膜3形成於基體2的至少一部分的表面21及背面22中的一面或雙面,側面覆膜4與表面覆膜3相鄰且形成於基體2的至少一部分的側面23,表面覆膜3及側面覆膜4皆具有經粗糙化的上表面30、40。該導線架材料1,當將表面覆膜3的平均粗糙度高度設為h 1並將側面覆膜4的平均粗糙度高度設為h 2時,側面覆膜4的平均粗糙度高度h 2相對於表面覆膜3的平均粗糙度高度h 1之比h 2/h 1為1.35以上。 <For lead frame material> FIG. 1 is a cross-sectional view showing an outline of a lead frame material of an embodiment of the present invention. As shown in FIG. 1, the lead frame material 1 of the present invention has a conductive substrate 2, a surface coating 3, and a side coating 4. The surface coating 3 is formed on one or both of the surface 21 and the back surface 22 of at least a portion of the substrate 2. The side coating 4 is adjacent to the surface coating 3 and formed on the side surface 23 of at least a portion of the substrate 2. The surface coating 3 and the side coating 4 both have roughened upper surfaces 30 and 40. In the lead frame material 1, when the average roughness height of the surface coating 3 is set to h1 and the average roughness height of the side coating 4 is set to h2 , the ratio of the average roughness height h2 of the side coating 4 to the average roughness height h1 of the surface coating 3 is h2 / h1, which is 1.35 or more.
如此,藉由控制表面覆膜3及側面覆膜4的平均粗糙度高度h 1、h 2,能夠使處於熱循環後的導線架材料1的與樹脂的密接性和封裝體的氣密性變化。尤其是,藉由將側面覆膜4的平均粗糙度高度h 2設為相對性地大於平均粗糙度高度h 1,能夠使以往的與壓模樹脂的接觸面積小因而造成密接性變低的側面覆膜4的與壓模樹脂的密接性,相對性地高於表面覆膜3的與壓模樹脂的密接性,因此能使封裝體的氣密性提高。此外,若表面覆膜3的平均粗糙度高度h 1變大,會變得容易發生來自表面覆膜3的落粉,因此藉由將側面覆膜4的平均粗糙度高度h 2設為相對性地大於表面覆膜3的平均粗糙度高度h 1,能夠不易發生落粉。 In this way, the adhesion between the lead frame material 1 and the resin and the airtightness of the package can be changed by controlling the average roughness heights h1 and h2 of the surface film 3 and the side film 4. In particular, by making the average roughness height h2 of the side film 4 relatively larger than the average roughness height h1 , the adhesion between the side film 4 and the mold resin, which has a small contact area with the mold resin and has low adhesion, can be relatively higher than the adhesion between the surface film 3 and the mold resin, thereby improving the airtightness of the package. If the average roughness height h1 of the surface film 3 increases, powder falling from the surface film 3 becomes more likely to occur. Therefore, by setting the average roughness height h2 of the side film 4 relatively larger than the average roughness height h1 of the surface film 3, powder falling can be less likely to occur.
從而,藉由將側面覆膜4的平均粗糙度高度h 2相對於表面覆膜3的平均粗糙度高度h 1之比h 2/h 1設為1.35以上,能獲得一種導線架材料,其即便在處於預測為極端的使用環境的熱循環的情況下,仍能夠改善封裝體的氣密性。此外,本發明的側面覆膜4的平均粗糙度高度h 2相對於表面覆膜3的平均粗糙度高度h 1之比h 2/h 1為1.35以上的導線架材料1,在不易發生落粉這點上也優異。 Therefore, by setting the ratio h 2 /h 1 of the average roughness height h 2 of the side coating 4 to the average roughness height h 1 of the surface coating 3 to 1.35 or more, a lead frame material can be obtained that can improve the airtightness of the package even in a thermal cycle that is expected to be an extreme use environment. In addition, the lead frame material 1 of the present invention in which the ratio h 2 /h 1 of the average roughness height h 2 of the side coating 4 to the average roughness height h 1 of the surface coating 3 is 1.35 or more is also excellent in that powder shedding is not likely to occur.
在此處,表面覆膜3及側面覆膜4的平均粗糙度高度h 1、h 2的控制,例如能夠藉由如下方式實行:藉由電鍍覆(粗糙化鍍覆)形成表面覆膜3及側面覆膜4的粗糙化層5的同時,在實行電鍍覆(粗糙化鍍覆)時將遮蔽板設置於基體2的表面21與反電極之間,在調整其遮蔽板的開口比的同時,將電流密度調整在5 A/dm 2以上且80 A/dm 2以下的範圍。 Here, the control of the average roughness heights h1 and h2 of the surface coating 3 and the side coating 4 can be implemented, for example, in the following manner: while forming the roughened layer 5 of the surface coating 3 and the side coating 4 by electroplating (roughening coating), a shielding plate is placed between the surface 21 of the substrate 2 and the counter electrode when the electroplating (roughening coating) is performed, and while adjusting the opening ratio of the shielding plate, the current density is adjusted to a range of more than 5 A/ dm2 and less than 80 A/dm2.
(針對導電性的基體(基材)) 本發明的導線架材料1,具有導電性的基體2、表面覆膜3及側面覆膜4,表面覆膜3形成於基體2的至少一部分的表面21及背面22中的一面或雙面,側面覆膜4與表面覆膜3相鄰且形成於基體2的至少一部分的側面23。 (For conductive substrates (substrates)) The lead frame material 1 of the present invention has a conductive substrate 2, a surface coating 3 and a side coating 4, wherein the surface coating 3 is formed on one or both of the surface 21 and the back surface 22 of at least a portion of the substrate 2, and the side coating 4 is adjacent to the surface coating 3 and formed on the side 23 of at least a portion of the substrate 2.
其中,基體2較佳是由包含銅(Cu)、鐵(Fe)或鋁(A1)之金屬或合金所構成。更具體而言,從提高導電性及散熱性的觀點來看,基體2較佳是由銅、銅合金、鐵、鐵合金、鋁或鋁合金所構成。The substrate 2 is preferably made of a metal or alloy including copper (Cu), iron (Fe) or aluminum (Al). More specifically, from the perspective of improving electrical conductivity and heat dissipation, the substrate 2 is preferably made of copper, copper alloy, iron, iron alloy, aluminum or aluminum alloy.
當基體2由合金所構成時,其合金組成並無特別限定,能夠依據導線架材料所要求的特性適當地選擇。在此處,作為構成基體2的銅合金的示例,除了純銅(無氧銅(OFC):C1020或韌銅(TPC):C1100等)以外,可列舉Copper Development Association(CDA)記載的合金即C18045(Cu-0.3Cr-0.25Sn-0.52Zn)、C19400(Cu-2.3Fe-0.03P-0.15Zn)。此外,作為構成基體2的鐵合金的示例,可列舉42合金(Fe-42Ni)。再者,各元素之前的數字表示合金中的質量%單位的含量。When the substrate 2 is composed of an alloy, the alloy composition is not particularly limited and can be appropriately selected according to the characteristics required of the lead frame material. Here, as examples of copper alloys constituting the substrate 2, in addition to pure copper (oxygen-free copper (OFC): C1020 or tantalum copper (TPC): C1100, etc.), alloys listed in the Copper Development Association (CDA), namely C18045 (Cu-0.3Cr-0.25Sn-0.52Zn) and C19400 (Cu-2.3Fe-0.03P-0.15Zn) can be listed. In addition, as an example of an iron alloy constituting the substrate 2, 42 alloy (Fe-42Ni) can be listed. Furthermore, the number before each element represents the content in the alloy in mass %.
基體2的形態,較佳是金屬箔或合金箔,作為如此的金屬箔或合金箔,可列舉例如:軋延箔、電解箔等。尤其是,從機械性質構成為具有異向性的觀點來看,可將藉由衝壓加工等所形成的軋延箔用於基體2。The substrate 2 is preferably in the form of a metal foil or an alloy foil, and examples of such metal foil or alloy foil include rolled foil and electrolytic foil. In particular, from the viewpoint of having anisotropic mechanical properties, a rolled foil formed by a stamping process or the like can be used as the substrate 2.
基體2的厚度並無特別限定,例如是1 μm以上且500 μm以下,較佳是5 μm以上且200 μm以下的範圍內。The thickness of the substrate 2 is not particularly limited, and is, for example, in the range of 1 μm to 500 μm, preferably in the range of 5 μm to 200 μm.
(針對表面覆膜及側面覆膜) 表面覆膜3是形成於基體2的至少一部分的表面21及背面22中的一面或雙面的覆膜。此外,側面覆膜4是與表面覆膜3相鄰且形成於基體2的至少一部分的側面23的覆膜。因此,本發明的導線架材料1為具有上述導電性的基體2、表面覆膜3及側面覆膜4者。 (For surface coating and side coating) The surface coating 3 is a coating formed on one or both of the surface 21 and the back surface 22 of at least a portion of the substrate 2. In addition, the side coating 4 is a coating adjacent to the surface coating 3 and formed on the side 23 of at least a portion of the substrate 2. Therefore, the lead frame material 1 of the present invention is a substrate 2, a surface coating 3, and a side coating 4 having the above-mentioned conductivity.
表面覆膜3及側面覆膜4皆具有經粗糙化的上表面30、40,當將表面覆膜3的上表面30的平均粗糙度高度設為h 1並將側面覆膜4的上表面40的平均粗糙度高度設為h 2時,側面覆膜4的平均粗糙度高度h 2相對於表面覆膜3的平均粗糙度高度h 1之比h 2/h 1為1.35以上。藉此,比起形成於基體2的表面21及背面22的表面覆膜3,形成於基體2的側面23的側面覆膜4的粗糙度變大,因此,在基體2的側面23處,會變得難以在側面覆膜4與樹脂(壓模樹脂)之間產生間隙。此外,藉由將側面覆膜4的平均粗糙度高度h 2相對於表面覆膜3的平均粗糙度高度h 1之比h 2/h 1設為1.35以上,能夠使表面覆膜3的部分的上表面30的脫落的落粉變得不易發生。另一方面,若側面覆膜4的平均粗糙度高度h 2相對於表面覆膜3的平均粗糙度高度h 1之比h 2/h 1小於1.35,相比於表面覆膜3的與樹脂的密接力,側面覆膜4的與樹脂的密接力會大幅地降低,因此處於熱循環時,在基體2的側面23與樹脂之間會變得容易發生間隙,而封裝體的氣密性降低。從而,從進一步提高封裝體的氣密性的觀點來看,側面覆膜4的平均粗糙度高度h 2相對於表面覆膜3的平均粗糙度高度h 1之比h 2/h 1較佳是在1.35以上且5.00以下的範圍,更佳是1.66以上且5.00以下的範圍。 The surface coating 3 and the side coating 4 both have roughened upper surfaces 30 and 40, and when the average roughness height of the upper surface 30 of the surface coating 3 is set to h1 and the average roughness height of the upper surface 40 of the side coating 4 is set to h2 , the ratio of the average roughness height h2 of the side coating 4 to the average roughness height h1 of the surface coating 3 is h2 / h1 or more, which is 1.35. Thus, the roughness of the side coating 4 formed on the side surface 23 of the substrate 2 is greater than that of the surface coating 3 formed on the surface 21 and the back surface 22 of the substrate 2, and therefore, it becomes difficult to generate a gap between the side coating 4 and the resin (molding resin) at the side surface 23 of the substrate 2. Furthermore, by setting the ratio h 2 /h 1 of the average roughness height h 2 of the side coating 4 to the average roughness height h 1 of the surface coating 3 to be 1.35 or more, it is possible to prevent powder from falling off the upper surface 30 of the surface coating 3. On the other hand, if the ratio h 2 /h 1 of the average roughness height h 2 of the side coating 4 to the average roughness height h 1 of the surface coating 3 is less than 1.35, the adhesion between the side coating 4 and the resin is greatly reduced compared to the adhesion between the surface coating 3 and the resin, so that a gap is easily generated between the side surface 23 of the substrate 2 and the resin during a thermal cycle, and the airtightness of the package is reduced. Therefore, from the viewpoint of further improving the airtightness of the package, the ratio h 2 /h 1 of the average roughness height h 2 of the side film 4 to the average roughness height h 1 of the surface film 3 is preferably in the range of 1.35 to 5.00, more preferably 1.66 to 5.00.
在此處,表面覆膜3的平均粗糙度高度h 1較佳是在0.5 μm以上且3.5 μm以下的範圍,更佳是在0.8 μm以上且2.5 μm以下的範圍。尤其是,從提高表面覆膜3的與樹脂的密接力而進一步提高封裝體的氣密性的觀點來看,表面覆膜3的平均粗糙度高度h 1較佳是0. 5μm以上,更佳是0.8 μm以上。此外,從提高表面覆膜3的與基體2的密接力而使導線架材料1的落粉變得不易發生的觀點來看,表面覆膜3的平均粗糙度高度h 1較佳是3.5 μm以下,更佳是2.5 μm以下。 Here, the average roughness height h1 of the surface coating 3 is preferably in the range of 0.5 μm or more and 3.5 μm or less, and more preferably in the range of 0.8 μm or more and 2.5 μm or less. In particular, from the viewpoint of improving the adhesion between the surface coating 3 and the resin and further improving the airtightness of the package, the average roughness height h1 of the surface coating 3 is preferably 0.5 μm or more, and more preferably 0.8 μm or more. In addition, from the viewpoint of improving the adhesion between the surface coating 3 and the substrate 2 and making it difficult for the powder of the lead frame material 1 to fall off, the average roughness height h1 of the surface coating 3 is preferably 3.5 μm or less, and more preferably 2.5 μm or less.
此外,側面覆膜4的平均粗糙度高度h 2較佳是在1.0 μm以上且6.5 μm以下的範圍,更佳是在1.2 μm以上且4.8 μm以下的範圍。尤其是,從提高側面覆膜4的與樹脂的密接力而進一步提高封裝體的氣密性的觀點來看,側面覆膜4的平均粗糙度高度h 2較佳是1.0 μm以上,更佳是1.2 μm以上,進一步較佳是1.5 μm以上。此外,從提高側面覆膜4的與基體2的密接力而使導線架材料1的落粉變得不易發生的觀點來看,側面覆膜4的平均粗糙度高度h 2較佳是6.5 μm以下,更佳是4.8 μm以下。 In addition, the average roughness height h2 of the side coating 4 is preferably in the range of 1.0 μm or more and 6.5 μm or less, and more preferably in the range of 1.2 μm or more and 4.8 μm or less. In particular, from the viewpoint of improving the adhesion between the side coating 4 and the resin and further improving the airtightness of the package, the average roughness height h2 of the side coating 4 is preferably 1.0 μm or more, more preferably 1.2 μm or more, and further preferably 1.5 μm or more. In addition, from the viewpoint of improving the adhesion between the side coating 4 and the substrate 2 and making it difficult for the lead frame material 1 to fall off, the average roughness height h2 of the side coating 4 is preferably 6.5 μm or less, and more preferably 4.8 μm or less.
表面覆膜3的平均粗糙度高度h 1與側面覆膜4的平均粗糙度高度h 2,能夠針對將包含表面覆膜3及側面覆膜4的厚度方向之截面進行顯微切片加工而成者,使用掃描式電子顯微鏡(SEM)觀察來求出。在此處,藉由SEM進行的觀察,針對形成於表面21的表面覆膜3、形成於背面22的表面覆膜3及形成於側面23的側面覆膜4,將覆膜上呈連續的共10個的凹凸當作1個視野,然後隨機選擇分別的共3個視野,針對共3個視野的SEM影像,分別利用在通過凹凸的最高點(表面覆膜的上表面的最高點)的基體2的表面(或背面、側面)平行地畫出的假想線、與在通過凹凸的最低點(表面覆膜的上表面的最低點)的基體2的表面(或背面、側面)平行地畫出的假想線,來劃分出評價區域(表面覆膜3的評價區域M1或側面覆膜4的評價區域M2),在該評價區域處,能夠算出表面覆膜3或側面覆膜4所佔的部分(表面覆膜3的存在區域P1、側面覆膜4的存在區域P2)的面積。表面覆膜3或側面覆膜4所佔的部分的面積的計算,能夠藉由二值化處理來實行,該二值化處理是使用影像處理軟體Image J,分別將下限閾值設為128、將上限閾值設為255,利用二值化的設定,一方面排除分離點,另一方面將表面覆膜3及側面覆膜4的存在區域的內部上色。能夠將此時所獲得的表面覆膜3或側面覆膜4所佔的部分的面積除以整條線的長度(10個凹凸的寬度)而得的數值,設為每一視野的覆膜(表面覆膜3或側面覆膜4)的平均粗糙度高度。 The average roughness height h1 of the surface coating 3 and the average roughness height h2 of the side coating 4 can be obtained by micro-slicing a cross section in the thickness direction including the surface coating 3 and the side coating 4 and observing using a scanning electron microscope (SEM). Here, in the observation by SEM, a total of 10 continuous concavities and convexities on the coating are regarded as one field of view, and then three fields of view are randomly selected. For the SEM images of the total of three fields of view, the plane of the surface (or back surface, side surface) of the substrate 2 passing through the highest point of the concavity and convexity (the highest point of the upper surface of the surface coating) is respectively used. An evaluation area (evaluation area M1 of the surface coating 3 or evaluation area M2 of the side coating 4) is divided by an imaginary line drawn in parallel with the surface (or back side, side) of the substrate 2 passing through the lowest point of the unevenness (the lowest point of the upper surface of the surface coating). In the evaluation area, the area occupied by the surface coating 3 or the side coating 4 (the existence area P1 of the surface coating 3, the existence area P2 of the side coating 4) can be calculated. The calculation of the area occupied by the surface coating 3 or the side coating 4 can be performed by binarization using the image processing software Image J, with the lower threshold set to 128 and the upper threshold set to 255. The separation points are excluded by the binarization settings, while the inside of the area where the surface coating 3 and the side coating 4 exist is colored. The value obtained by dividing the area occupied by the surface coating 3 or the side coating 4 obtained at this time by the length of the entire line (the width of 10 bumps) can be set as the average roughness height of the coating (surface coating 3 or side coating 4) in each field of view.
例如,如第2圖所示,當要計算形成於基體2的表面21的表面覆膜3的面積時,在每一視野下畫出:在通過表面覆膜3的上表面30的最高點A1的表面21上平行地畫出的假想線l 1、與在通過表面覆膜3的上表面30的最低點B1的表面21上平行地畫出的假想線n 1。此時,如第3圖所示,將藉由假想線l 1與假想線n 1區分出的區域設為評價區域M1,計算該等評價區域M1中表面覆膜3所佔的部分的面積,即能夠藉此計算表面21上的評價區域M1中佔據的表面覆膜3的存在區域P1的面積。當要計算形成於基體2的背面22的表面覆膜3的面積時,也同樣地操作,即能夠計算背面22上的評價區域M1中佔據的表面覆膜3的存在區域P1的面積。能夠將此時所獲得的表面覆膜3的存在區域P1的面積除以整條線的長度(10個凹凸的寬度)L1所得的數值,設為每一視野的表面覆膜3的平均粗糙度高度。在此處,當在基材2的表面21及背面22兩處形成有表面覆膜3時,能夠將表面21側的共3個視野及背面22側的共3個視野之合計共6個視野的表面覆膜3的平均粗糙度高度進行平均,來設為表面覆膜3的平均粗糙度高度h 1。此外,當在基材2的表面21或背面22的其中一處形成有表面覆膜3時,能夠將形成有表面覆膜3之側的共3個視野的表面覆膜3的平均粗糙度高度進行平均,來設為表面覆膜3的平均粗糙度高度h 1。 For example, as shown in FIG. 2, when the area of the surface film 3 formed on the surface 21 of the substrate 2 is to be calculated, an imaginary line l1 drawn parallel to the surface 21 passing through the highest point A1 of the upper surface 30 of the surface film 3 and an imaginary line n1 drawn parallel to the surface 21 passing through the lowest point B1 of the upper surface 30 of the surface film 3 are drawn in each field of view. At this time, as shown in FIG. 3, the area divided by the imaginary line l1 and the imaginary line n1 is set as the evaluation area M1, and the area of the portion of the evaluation area M1 occupied by the surface film 3 is calculated, that is, the area of the surface film 3 existing area P1 occupied in the evaluation area M1 on the surface 21 can be calculated. When the area of the surface film 3 formed on the back side 22 of the substrate 2 is to be calculated, the same operation is performed, that is, the area of the surface film 3 existing area P1 occupied in the evaluation area M1 on the back side 22 can be calculated. The value obtained by dividing the area of the surface film 3 existing area P1 obtained at this time by the length of the entire line (the width of 10 concavities) L1 can be set as the average roughness height of the surface film 3 in each field of view. Here, when the surface film 3 is formed on both the surface 21 and the back side 22 of the substrate 2, the average roughness height of the surface film 3 in a total of 6 fields of view, namely, 3 fields of view on the surface 21 side and 3 fields of view on the back side 22 side, can be averaged to set as the average roughness height h 1 of the surface film 3. When the surface film 3 is formed on one of the surface 21 or the back surface 22 of the substrate 2 , the average roughness heights of the surface film 3 in three viewing fields on the side where the surface film 3 is formed can be averaged to obtain the average roughness height h 1 of the surface film 3 .
此外,如第4圖所示,當要計算形成於基體2的側面23的側面覆膜4的面積時,在每一視野下畫出:在通過側面覆膜4的上表面40的最高點A2的側面23上平行地畫出的假想線l 2、與在通過側面覆膜4的上表面的最低點B2的側面23上平行地畫出的假想線n 2。此時,如第5圖所示,將藉由假想線l 2與假想線n 2區分出的區域設為評價區域M2,計算該等評價區域M2中佔據的側面覆膜4的存在區域P2面積,即能夠藉此計算側面23上的評價區域M2中佔據的側面覆膜4的存在區域P2的面積。能夠將此時所獲得的側面覆膜4的存在區域P2的面積除以整條線的長度(10個凹凸的寬度)L2所得的數值,設為每一視野的側面覆膜4的平均粗糙度高度。進一步,能夠藉由將形成有側面覆膜4的共3個視野的側面覆膜4的平均粗糙度高度進行平均,來設為側面覆膜4的平均粗糙度高度h 2。 Furthermore, as shown in FIG. 4, when the area of the side coating 4 formed on the side surface 23 of the substrate 2 is to be calculated, an imaginary line l2 drawn parallel to the side surface 23 passing through the highest point A2 of the upper surface 40 of the side coating 4 and an imaginary line n2 drawn parallel to the side surface 23 passing through the lowest point B2 of the upper surface of the side coating 4 are drawn in each field of view. At this time, as shown in FIG. 5, the area divided by the imaginary line l2 and the imaginary line n2 is set as the evaluation area M2, and the area of the existence area P2 of the side coating 4 occupied in the evaluation area M2 is calculated, that is, the area of the existence area P2 of the side coating 4 occupied in the evaluation area M2 on the side surface 23 can be calculated. The value obtained by dividing the area of the area P2 where the side coating 4 exists by the length of the entire line (the width of 10 concavities) L2 can be set as the average roughness height of the side coating 4 in each field of view. Furthermore, the average roughness height of the side coating 4 in a total of three fields of view where the side coating 4 is formed can be averaged to obtain the average roughness height h2 of the side coating 4.
再者,第2圖是顯示與第1圖相同構成的導線架材料1中的形成於基體2的表面21的表面覆膜3的截面圖,但是為了針對表面覆膜的存在區域P1進行說明,為求方便,針對表面覆膜3中的包含於評價區域M1中的部分(包含於表面覆膜的存在區域P1的部分)與不包含於評價區域M1中的部分(不包含於評價區域M1中佔據的表面覆膜的存在區域P1之部分)施加不同的影線(hatching)。同樣地,第4圖是顯示與第1圖相同構成的導線架材料1中的形成於基體2的側面23的側面覆膜4的截面圖,但是為了針對表面覆膜的存在區域P2進行說明,為求方便,針對側面覆膜4中的包含於評價區域M2中的部分與不包含於評價區域M2中的部分施加不同的影線。Furthermore, FIG. 2 is a cross-sectional view showing a surface coating 3 formed on a surface 21 of a substrate 2 in a lead frame material 1 having the same structure as FIG. 1, but in order to explain the area P1 where the surface coating exists, for the sake of convenience, different hatching is applied to a portion of the surface coating 3 included in the evaluation area M1 (a portion included in the area P1 where the surface coating exists) and a portion not included in the evaluation area M1 (a portion not included in the area P1 where the surface coating exists occupied by the evaluation area M1). Similarly, FIG. 4 is a cross-sectional view showing the side coating 4 formed on the side surface 23 of the substrate 2 in the lead frame material 1 having the same structure as FIG. 1, but in order to explain the area P2 where the surface coating exists, different hatching is applied to the portion of the side coating 4 included in the evaluation area M2 and the portion not included in the evaluation area M2 for the sake of convenience.
另一方面,較佳是:在表面覆膜3的截面觀察,將利用假想線l 1與假想線n 1劃分出的第一測定面積(例如上述的評價區域M1的面積)中所佔的第一空隙率設為V 1,該假想線l 1為以通過表面覆膜3的上表面30的最高點A1的位置且相對於基體2的表面21(或背面22)平行的方式畫出者,該假想線n 1為以通過表面覆膜3的上表面30的最低點B1的位置且相對於基體2的表面21平行的方式畫出者,並在側面覆膜4的截面觀察,將利用假想線l 2與假想線n 2劃分出的第二測定面積(例如上述評價區域M2的面積)中所佔的第二空隙率設為V 2,該假想線l 2為以通過側面覆膜4的上表面40的最高點A2的位置且相對於基體2的側面23平行的方式畫出者,該假想線n 2為以通過側面覆膜4的上表面40的最低點B2的位置且相對於基體2的側面23平行的方式畫出者,此時,第二空隙率V 2相對於空隙率V 1之比V 2/V 1在0.50以上且0.91以下的範圍。在此處,若V 2/V 1小於0.50,側面23的對於樹脂的密接性會變得弱於表面21及背面22,因而在處於預測為極端的使用環境的熱循環的情況下,比起V 2/V 1在0.50以上的情況,利用樹脂密封而成時的封裝體的氣密性會降低,因此耐熱循環性降低。另一方面,若V 2/V 1大於0.91,樹脂對於側面覆膜4的上表面40的凹凸的填入會變少,而變得難以獲得定錨效果,因而在處於預測為極端的使用環境的熱循環的情況下,比起V 2/V 1在0.91以下的情況,相對於導線架材料1的樹脂的密接性降低,而封裝體的氣密性降低,因此耐熱循環性會降低。從而,第二空隙率V 2相對於空隙率V 1之比V 2/V 1較佳是在0.50以上且0.91以下的範圍,更佳是在0.62以上且0.83以下的範圍。 On the other hand, it is preferred that: in cross-sectional observation of the surface coating 3, a first porosity in a first measurement area (e.g., the area of the evaluation area M1 described above) divided by an imaginary line l1 and an imaginary line n1 is set to V1 , wherein the imaginary line l1 is drawn through the highest point A1 of the upper surface 30 of the surface coating 3 and is parallel to the surface 21 (or the back surface 22) of the substrate 2, and the imaginary line n1 is drawn through the lowest point B1 of the upper surface 30 of the surface coating 3 and is parallel to the surface 21 of the substrate 2; and in cross-sectional observation of the side coating 4, a second porosity in a second measurement area (e.g., the area of the evaluation area M2 described above) divided by an imaginary line l2 and an imaginary line n2 is set to V2 , and the imaginary line l1 is drawn through the highest point A1 of the upper surface 30 of the surface coating 3 and is parallel to the surface 21 of the substrate 2. 2 is drawn in a manner passing through the highest point A2 of the upper surface 40 of the side coating 4 and being parallel to the side surface 23 of the substrate 2, and the imaginary line n2 is drawn in a manner passing through the lowest point B2 of the upper surface 40 of the side coating 4 and being parallel to the side surface 23 of the substrate 2. At this time, the ratio V2 / V1 of the second porosity V2 to the porosity V1 is in the range of not less than 0.50 and not more than 0.91. Here, if V 2 /V 1 is less than 0.50, the side surface 23 becomes less adhesive to the resin than the front surface 21 and the back surface 22. Therefore, in the case of a thermal cycle in an environment of use that is expected to be extreme, the airtightness of the package sealed with the resin is reduced compared to the case where V 2 /V 1 is greater than 0.50, and the heat cycle resistance is reduced. On the other hand, if V2 / V1 is greater than 0.91, the resin fills less into the unevenness of the upper surface 40 of the side cover 4, and it becomes difficult to obtain the anchoring effect. Therefore, in the case of a heat cycle in an environment of use that is expected to be extreme, the adhesion of the resin to the lead frame material 1 is reduced compared to the case where V2 / V1 is less than 0.91, and the airtightness of the package is reduced, so the heat cycle resistance is reduced. Therefore, the ratio V2 / V1 of the second void ratio V2 to the void ratio V1 is preferably in the range of 0.50 or more and 0.91 or less, and more preferably in the range of 0.62 or more and 0.83 or less.
在此處,樹脂與導線架材料1的熱膨脹係數不同,並且比起導線架材料1,樹脂因熱造成的體積變化較大。因此,較佳是將樹脂與導線架材料1會接觸的部分處的樹脂填入的空間的比例、即導線架材料1的表面覆膜3及側面覆膜4的空隙率分別控制在適當的範圍內。更具體而言,第一空隙率V 1及第二空隙率V 2較佳是皆在32%以上且64%以下的範圍。若第一空隙率V 1及第二空隙率V 2中的至少任一者的空隙率小於32%,樹脂會變得難以填入表面覆膜3或側面覆膜4的上表面30、40的凹凸,因此,比起該等的空隙率在32%以上的情況,會有在導線架材料1與樹脂之間產生間隙而密接性降低的疑慮。此外,若第一空隙率V 1及第二空隙率V 2中的至少任一者的空隙率小於32%,會有導線架材料1無法追隨樹脂的膨脹收縮的疑慮,因此在處於預測為極端的使用環境的熱循環的情況下,比起該等的空隙率在32%以上的情況,樹脂會容易自導線架材料1剝離,因而該等的密接性降低而封裝體的氣密性降低,因此耐熱循環性降低。另一方面,若第一空隙率V 1及第二空隙率V 2中的至少任一者的空隙率大於64%,在與樹脂之間會變得難以獲得定錨效果,因此,比起該等的空隙率在64%以下的情況,會有導線架材料1的對於樹脂的密接性降低的疑慮。此外,若第一空隙率V 1及第二空隙率V 2中的至少任一者的空隙率大於64%,在藉由加熱發生膨脹時,樹脂對表面覆膜3和側面覆膜4施加的壓力會增加,因而在藉由熱循環而重複進行該步驟時,表面覆膜3和側面覆膜4會破損而變得容易產生間隙。因此,比起該等的空隙率在64%以下的情況,對於樹脂的密接性會降低而封裝體的氣密性降低,因此耐熱循環性降低。從而,第一空隙率V 1較佳是在32%以上且64%以下的範圍,更佳是在45%以上且60%以下的範圍。此外,第二空隙率V 2較佳是在32%以上且64%以下的範圍,更佳是在32%以上且52%以下的範圍,進一步較佳是在35%以上且50%以下的範圍。 Here, the thermal expansion coefficients of the resin and the lead frame material 1 are different, and the volume change of the resin due to heat is larger than that of the lead frame material 1. Therefore, it is preferable to control the ratio of the space filled with the resin at the portion where the resin and the lead frame material 1 are in contact, that is, the porosity of the surface coating 3 and the side coating 4 of the lead frame material 1 within an appropriate range. More specifically, the first porosity V1 and the second porosity V2 are preferably both within a range of 32% or more and 64% or less. If at least one of the first porosity V1 and the second porosity V2 is less than 32%, it becomes difficult for the resin to fill the unevenness of the upper surface 30, 40 of the surface coating 3 or the side coating 4. Therefore, compared with the case where the porosity is greater than 32%, there is a concern that a gap will be generated between the lead frame material 1 and the resin, thereby reducing the adhesion. Furthermore, if at least one of the first porosity V1 and the second porosity V2 is less than 32%, there is a concern that the lead frame material 1 cannot follow the expansion and contraction of the resin. Therefore, in the case of a thermal cycle in an environment that is expected to be an extreme use environment, the resin is more likely to be peeled off from the lead frame material 1 than when the porosity is greater than 32%, thereby reducing the adhesion and the airtightness of the package, thereby reducing the heat cycle resistance. On the other hand, if at least one of the first porosity V1 and the second porosity V2 is greater than 64%, it becomes difficult to obtain an anchoring effect with the resin, and therefore, there is a concern that the adhesion of the lead frame material 1 to the resin is reduced compared to the case where the porosity is 64% or less. In addition, if at least one of the first porosity V1 and the second porosity V2 is greater than 64%, when the resin expands by heating, the pressure applied by the resin to the surface film 3 and the side film 4 increases, and therefore, when this step is repeated by heat cycle, the surface film 3 and the side film 4 are damaged and gaps are easily generated. Therefore, compared with the case where the porosity is below 64%, the adhesion to the resin is reduced and the airtightness of the package is reduced, so the heat cycle resistance is reduced. Therefore, the first porosity V1 is preferably in the range of 32% to 64%, more preferably in the range of 45% to 60%. In addition, the second porosity V2 is preferably in the range of 32% to 64%, more preferably in the range of 32% to 52%, and further preferably in the range of 35% to 50%.
第一空隙率V 1及第二空隙率V 2,能夠使用用於測定表面覆膜3的平均粗糙度高度h 1及側面覆膜4的平均粗糙度高度h 2的SEM影像,分別針對形成於表面21的表面覆膜3、形成於背面22的表面覆膜3與形成於側面23的側面覆膜4,計算由評價區域M1、M2的面積減去覆膜部分P的面積而得的空隙面積相對於評價區域M1、M2整體的面積之比例,藉此求出每一視野的空隙率。 The first porosity V1 and the second porosity V2 can be calculated using SEM images for measuring the average roughness height h1 of the surface film 3 and the average roughness height h2 of the side film 4. The ratio of the void area obtained by subtracting the area of the film portion P from the area of the evaluation areas M1 and M2 to the overall area of the evaluation areas M1 and M2 can be calculated for the surface film 3 formed on the surface 21, the surface film 3 formed on the back surface 22, and the side film 4 formed on the side surface 23, thereby determining the porosity of each field of view.
基於該等每一視野的空隙率,在基材2的表面21及背面22兩者上形成有表面覆膜3之示例中,將表面21側的共3個視野及背面22側的共3個視野之合計共6個視野的表面覆膜3的空隙率進行平均,即能夠設為第一空隙率V 1(%)。此外,在基材2的表面21或背面22的其中一面上形成有表面覆膜3之示例中,將形成有表面覆膜3之側的共3個視野的表面覆膜3的空隙率進行平均,即能夠設為第一空隙率V 1。此外,針對側面覆膜4,也能夠將共3個視野的空隙率進行平均,即能夠設為第二空隙率V 2(%)。 Based on the porosity of each field of view, in an example where the surface coating 3 is formed on both the surface 21 and the back surface 22 of the substrate 2, the porosity of the surface coating 3 in a total of 6 fields of view, which is a total of 3 fields of view on the surface 21 side and a total of 3 fields of view on the back surface 22 side, is averaged to be set as the first porosity V 1 (%). In addition, in an example where the surface coating 3 is formed on one of the surface 21 or the back surface 22 of the substrate 2, the porosity of the surface coating 3 in a total of 3 fields of view on the side where the surface coating 3 is formed is averaged to be set as the first porosity V 1. In addition, for the side coating 4, the porosity of a total of 3 fields of view can also be averaged to be set as the second porosity V 2 (%).
本發明的導線架材料1,當將基體2的厚度設為T時,基體2的厚度T相對於側面覆膜4的平均粗糙度高度h 2之比(T/h 2比),較佳是在15.0以上且200.0以下的範圍。尤其是,若T/h 2比小於15.0,相對於基體2的側面23的面積,側面覆膜4的粗糙度高度會變得過剩地大,因此比起T/h 2比為15.0以上的情況,變得容易引發落粉。若T/h 2比大於200.0,相對於側面23的面積,側面覆膜4的粗糙度高度會變低,因此比起T/h 2比為200.0以下的情況,變得難以獲得與樹脂的密接性。從而,基體2的厚度T相對於側面覆膜4的平均粗糙度高度h 2之比(T/h 2比),較佳是在15.0以上且200.0以下的範圍,更佳是20.0以上且125.0以下的範圍。 In the lead frame material 1 of the present invention, when the thickness of the substrate 2 is set to T, the ratio of the thickness T of the substrate 2 to the average roughness height h2 of the side coating 4 (T/ h2 ratio) is preferably in the range of 15.0 or more and 200.0 or less. In particular, if the T/h2 ratio is less than 15.0, the roughness height of the side coating 4 becomes excessively large relative to the area of the side surface 23 of the substrate 2, and thus powder shedding is more likely to occur than when the T/ h2 ratio is greater than 15.0. If the T/ h2 ratio is greater than 200.0, the roughness height of the side coating 4 becomes low relative to the area of the side surface 23, and thus it becomes difficult to obtain adhesion with the resin than when the T/h2 ratio is less than 200.0. Therefore, the ratio of the thickness T of the substrate 2 to the average roughness height h2 of the side coating 4 (T/ h2 ratio) is preferably in the range of 15.0 to 200.0, and more preferably in the range of 20.0 to 125.0.
本發明的導線架材料1,如第1圖所示,當不具有後述的表面包覆層6時,表面覆膜3及側面覆膜4可分別藉由粗糙化層5形成。另一方面,如第6圖的導線架材料1A所示,當導線架材料1A具有後述的表面包覆層6時,表面覆膜3A及側面覆膜4A之中具有表面包覆層6之覆膜,由粗糙化層5與表面包覆層6來形成。在此處,表面覆膜3(3A)及側面覆膜4(4A)較佳是皆具有粗糙化層5。When the lead frame material 1 of the present invention does not have a surface coating layer 6 described later, as shown in FIG. 1 , the surface coating 3 and the side coating 4 can be formed by the roughening layer 5, respectively. On the other hand, when the lead frame material 1A has a surface coating layer 6 described later, as shown in FIG. 6 , the coating having the surface coating layer 6 among the surface coating 3A and the side coating 4A is formed by the roughening layer 5 and the surface coating layer 6. Here, the surface coating 3 (3A) and the side coating 4 (4A) preferably both have the roughening layer 5.
粗糙化層5形成於基體2的表面的至少一部分。粗糙化層5藉由粗糙化粒子附著於基體2的表面21、背面22或側面23而形成。The rough layer 5 is formed on at least a portion of the surface of the substrate 2. The rough layer 5 is formed by attaching roughening particles to the surface 21, the back surface 22 or the side surface 23 of the substrate 2.
粗糙化層5較佳是由包含銅(Cu)及鎳(Ni)中的至少一種元素之金屬或合金所構成。更具體而言,從形成與樹脂的密接性優異的粗糙化形狀的觀點來看,粗糙化層5較佳是由銅、銅合金、鎳或鎳合金所構成。Roughened layer 5 is preferably made of a metal or alloy containing at least one element of copper (Cu) and nickel (Ni). More specifically, from the viewpoint of forming a roughened shape with excellent adhesion to the resin, roughened layer 5 is preferably made of copper, a copper alloy, nickel or a nickel alloy.
此外,粗糙化層5例如能夠藉由電鍍覆、Focus Ion Beam(FIB,聚焦離子束系統)或機械研磨來形成。其中,尤其是粗糙化層5較佳是藉由電鍍覆作為電鍍覆層來形成。In addition, the roughened layer 5 can be formed by, for example, electroplating, Focus Ion Beam (FIB) or mechanical polishing. Among them, the roughened layer 5 is preferably formed by electroplating as an electroplated coating.
(針對表面包覆層) 如第6圖的導線架材料1A所示,表面覆膜3A及側面覆膜4A較佳是進一步具有形成於粗糙化層5的上表面50且至少一層的表面包覆層6。此時,設為表面覆膜3的平均粗糙度高度h 1、側面覆膜4的平均粗糙度高度h 2等的測定對象的表面覆膜3A及側面覆膜4A,具有粗糙化層5與形成於粗糙化層的至少表面的表面包覆層6。藉由具有如此的表面包覆層6,藉由粗糙化層5的表面性狀而提高與樹脂的密接性的同時,導線架材料1A的表面組成也會改變,因此能夠在使與基體2的密接性提升的狀態下,提高與焊料的濕潤性及與樹脂的密接性兩者。 (Surface coating layer) As shown in the lead frame material 1A of FIG. 6 , the surface coating 3A and the side coating 4A preferably further have at least one surface coating layer 6 formed on the upper surface 50 of the roughened layer 5. At this time, the surface coating 3A and the side coating 4A to be measured for the average roughness height h 1 of the surface coating 3 and the average roughness height h 2 of the side coating 4 have the roughened layer 5 and the surface coating layer 6 formed on at least the surface of the roughened layer. By providing such a surface coating layer 6, the surface properties of the roughened layer 5 improve the adhesion to the resin and the surface composition of the lead frame material 1A is changed. Therefore, the wettability to the solder and the adhesion to the resin can be improved while the adhesion to the base 2 is improved.
表面包覆層6的有無及表面包覆層6的數量,可依據導線架材料的用途適當地選擇。The presence or absence of the surface coating layer 6 and the number of the surface coating layers 6 can be appropriately selected according to the application of the lead frame material.
在此處,較佳是:表面包覆層6中的至少一層由具有與粗糙化層5不同組成之金屬或合金所構成。更具體而言,較佳是:表面包覆層6中的至少一層由包含選自由銅(Cu)、鎳(Ni)、鈷(Co)、鈀(Pd)、銠(Rh)、釕(Ru)、鉑(Pt)、銥(Ir)、金(Au)、銀(Ag)、錫(Sn)及銦(In)所組成之群組中的1種以上之金屬或合金所構成。更具體而言,較佳是:表面包覆層6中的至少一層由銅、銅合金、鎳、鎳合金、鈷、鈷合金、鈀、鈀合金、銠、銠合金、釕、釕合金、鉑、鉑合金、銥、銥合金、金、金合金、銀、銀合金、錫、錫合金、銦或銦合金所構成。Here, it is preferred that at least one layer of the surface coating layer 6 is composed of a metal or alloy having a composition different from that of the roughened layer 5. More specifically, it is preferred that at least one layer of the surface coating layer 6 is composed of one or more metals or alloys selected from the group consisting of copper (Cu), nickel (Ni), cobalt (Co), palladium (Pd), rhodium (Rh), ruthenium (Ru), platinum (Pt), iridium (Ir), gold (Au), silver (Ag), tin (Sn) and indium (In). More specifically, it is preferred that at least one layer of the surface coating layer 6 is composed of copper, copper alloy, nickel, nickel alloy, cobalt, cobalt alloy, palladium, palladium alloy, rhodium, rhodium alloy, ruthenium, ruthenium alloy, platinum, platinum alloy, iridium, iridium alloy, gold, gold alloy, silver, silver alloy, tin, tin alloy, indium or indium alloy.
尤其是,表面包覆層6是與導線架材料1A的外部接觸的面,較佳是與焊料等的濕潤性優異。因此,表面包覆層6較佳是包含選自由金(Au)、銀(Ag)、銅(Cu)及錫(Sn)所組成之群組中的1種以上的元素之金屬或合金所構成。尤其是,從提高與焊料的濕潤性的觀點來看,表面包覆層6較佳是由金鈷合金、金、銀、銅或錫所構成。In particular, the surface coating layer 6 is the surface in contact with the outside of the lead frame material 1A, and preferably has excellent wettability with solder or the like. Therefore, the surface coating layer 6 is preferably composed of a metal or alloy containing one or more elements selected from the group consisting of gold (Au), silver (Ag), copper (Cu) and tin (Sn). In particular, from the viewpoint of improving wettability with solder, the surface coating layer 6 is preferably composed of a gold-cobalt alloy, gold, silver, copper or tin.
表面包覆層6的厚度並無特別限定,若厚度過大,會掩蓋掉形成於粗糙化層5的凹凸,而可能會因此損害至少一部分的樹脂密接性的提升效果。因此,表面包覆層6的厚度較佳是3.00 μm以下。此外,當表面包覆層6由包含金或銀等的貴金屬之金屬或合金所構成時,從不要將材料成本提高至必要程度以上的觀點來看,表面包覆層6的厚度更佳是2.00 μm以下。再者,表面包覆層6的厚度能夠藉由螢光X射線膜厚計等的膜厚計來測定。The thickness of the surface coating layer 6 is not particularly limited. If the thickness is too large, the unevenness formed in the roughening layer 5 will be covered, and the effect of improving the adhesion of the resin may be damaged. Therefore, the thickness of the surface coating layer 6 is preferably 3.00 μm or less. In addition, when the surface coating layer 6 is composed of a metal or alloy containing a precious metal such as gold or silver, the thickness of the surface coating layer 6 is preferably 2.00 μm or less from the perspective of not increasing the material cost to a higher level than necessary. Furthermore, the thickness of the surface coating layer 6 can be measured by a film thickness meter such as a fluorescent X-ray film thickness meter.
<針對導線架材料的製造方法> 上述導線架材料的製造方法,並無特別限定,從提高生產性的同時,還變得容易控制側面覆膜4的平均粗糙度高度h 2相對於表面覆膜3的平均粗糙度高度h 1之比h 2/h 1的觀點來看,較佳是:包含覆膜形成步驟之方法,該覆膜形成步驟是藉由電鍍覆,於基體2形成具有經粗糙化的上表面30、40之表面覆膜3及側面覆膜4。作為其一例,較佳是藉由電鍍覆將粗糙化層5形成於基體2之方法。 <Manufacturing method for lead frame material> The manufacturing method for the lead frame material is not particularly limited, but from the viewpoint of improving productivity and making it easier to control the ratio h2 / h1 of the average roughness height h2 of the side coating 4 to the average roughness height h1 of the surface coating 3, preferably, a method including a coating forming step is to form the surface coating 3 and the side coating 4 having the roughened upper surfaces 30 and 40 on the substrate 2 by electroplating. As an example, a method of forming the roughened layer 5 on the substrate 2 by electroplating is preferred.
作為導線架材料的製造方法的一例,能夠實行如下方法:準備導電性的基體2,基體2為已預先藉由衝壓加工調整了尺寸及厚度者,施行陰極電解脫脂及酸洗淨作為前處理後,形成粗糙化層5。在此處,作為形成粗糙化層的方法,可列舉電鍍覆、Focus Ion Beam(FIB,聚焦離子束系統)或機械研磨。該等之中,尤其是,粗糙化層5較佳是藉由電鍍覆來形成電鍍覆層。以下顯示將銅鍍覆層形成來作為粗糙化層5時的電鍍覆層的形成條件的示例。As an example of a method for manufacturing a lead frame material, the following method can be implemented: prepare a conductive substrate 2, the substrate 2 is one whose size and thickness have been adjusted in advance by stamping, perform cathode electrolytic degreasing and pickling as pretreatment, and then form a roughening layer 5. Here, as a method for forming the roughening layer, electroplating, Focus Ion Beam (FIB, focused ion beam system) or mechanical polishing can be listed. Among them, the roughening layer 5 is preferably formed by electroplating. An example of the formation conditions of the electroplating layer when a copper plating layer is formed as the roughening layer 5 is shown below.
[電鍍覆層的形成條件] 鍍覆浴:10 g/L~35 g/L(銅(原子)換算)的硫酸銅 60 g/L~180 g/L的硫酸 鉬濃度0.1 g/L~5.0 g/L的鉬酸銨 鍍覆條件:浴溫20℃~60℃,電流密度30 A/dm 2~80 A/dm 2 [Electroplating coating formation conditions] Plating bath: 10 g/L to 35 g/L (copper (atom) conversion) copper sulfate 60 g/L to 180 g/L molybdenum sulfate concentration 0.1 g/L to 5.0 g/L ammonium molybdate Plating conditions: bath temperature 20℃ to 60℃, current density 30 A/dm2 to 80 A/ dm2
在此處,作為控制導線架材料1的側面覆膜4的平均粗糙度高度h 2相對於表面覆膜3的平均粗糙度高度h 1之比h 2/h 1的方法,可列舉例如:在藉由電鍍覆(粗糙化鍍覆)形成粗糙化層5時,在基體2的表面21與反電極之間設置遮蔽板的同時,將要遮蔽的面積調整至相對於基體2的表面21及背面22的合計鍍覆面積在10%以上且30%以下的範圍,且將電流密度調整至5 A/dm 2以上80 A/dm 2以下的範圍。如此,在調整相對於基體2的表面21及背面22的合計鍍覆面積的以遮蔽板遮蔽起來的面積的比例(遮蔽板的開口比)的同時,還將電流密度調整至5 A/dm 2以上80 A/dm 2以下的範圍,藉此能夠獲得一種導線架材料1,其側面覆膜4的平均粗糙度高度h 2相對於表面覆膜3的平均粗糙度高度h 1之比h 2/h 1為1.35以上。 Here, as a method for controlling the ratio h 2 /h 1 of the average roughness height h 2 of the side coating 4 of the lead frame material 1 to the average roughness height h 1 of the surface coating 3, for example, when the roughening layer 5 is formed by electroplating (roughening coating), a shielding plate is provided between the surface 21 of the substrate 2 and the counter electrode, and the area to be shielded is adjusted to a range of not less than 10% and not more than 30% relative to the total coating area of the surface 21 and the back surface 22 of the substrate 2, and the current density is adjusted to a range of not less than 5 A/dm 2 and not more than 80 A/dm 2 . In this way, while adjusting the ratio of the area shielded by the shielding plate relative to the total coated area of the surface 21 and the back side 22 of the substrate 2 (the opening ratio of the shielding plate), the current density is also adjusted to a range of 5 A/ dm2 to 80 A/dm2, thereby obtaining a lead frame material 1 in which the ratio h2 / h1 of the average roughness height h2 of the side coating 4 to the average roughness height h1 of the surface coating 3 is greater than 1.35.
<針對導線架材料的用途> 導線架材料被用作連接端子,其支持並固定半導體元件,並藉由電線和印刷基板等來用以與外部實行電和訊號等的交換,例如較佳能夠用於半導體封裝體,其具備使用導線架材料所形成的導線架。在此處,作為可構裝於半導體封裝體的半導體元件,能夠列舉電晶體和電容器、LED等,但是不限於此。 <Application of lead frame materials> Lead frame materials are used as connection terminals, which support and fix semiconductor components and are used to exchange electricity and signals with the outside through wires and printed circuit boards. For example, they can be used in semiconductor packages that have lead frames formed using lead frame materials. Here, as semiconductor components that can be installed in semiconductor packages, transistors, capacitors, LEDs, etc. can be listed, but they are not limited to these.
本發明的導線架材料,即便處於預測為極端的使用環境的熱循環的情況下,仍能夠維持相對於導線架材料呈良好的樹脂密接性而大致不使其劣化,且不易發生來自粗糙化層的落粉所造成的故障和不良,因此尤其在車載用途等的半導體封裝體中,仍能夠實現高可靠性。The lead frame material of the present invention can maintain good resin adhesion with respect to the lead frame material without substantially deteriorating the lead frame material even when subjected to a thermal cycle that is expected to be an extreme usage environment, and is less likely to cause failures and defects due to powder falling from the roughened layer. Therefore, high reliability can be achieved, particularly in semiconductor packages for automotive applications and the like.
以上,說明了本發明的實施形態,但是本發明不限於上述實施形態,還包含含有本發明的概念及發明申請專利範圍內的全部態樣,並且能夠在本發明的範圍內進行各種變化。 [實施例] The above describes the implementation form of the present invention, but the present invention is not limited to the above implementation form, but also includes all aspects within the scope of the concept of the present invention and the scope of the invention application, and can be variously modified within the scope of the present invention. [Example]
繼而,為了進一步使本發明的效果明確,針對本發明例及比較例進行說明,但是本發明不限於該等本發明例。Next, in order to further clarify the effects of the present invention, examples of the present invention and comparative examples are described, but the present invention is not limited to these examples of the present invention.
(本發明例1~19、比較例1~7) 準備表1記載的厚度的導電性的基體即基材2,施行陰極電解脫脂及酸洗淨作為前處理,該基材2由表1所示的種類的金屬或合金所構成,並且已預先藉由衝壓加工而作成縱30 mm×橫10 mm的尺寸。 (Examples 1 to 19 of the present invention, comparative examples 1 to 7) A conductive substrate 2 having a thickness as shown in Table 1 was prepared, and cathodic electrolytic degreasing and pickling were performed as pretreatment. The substrate 2 was made of the metal or alloy of the type shown in Table 1 and was previously made into a size of 30 mm in length and 10 mm in width by stamping.
在此處,陰極電解脫脂藉由如下方式實行處理:將60 g/L濃度的氫氧化鈉水溶液作為脫脂液倒入電解槽中進行加熱,將基材2浸漬於加熱為60℃的脫脂液中並與電解槽的陽極連接,以2.5 A/dm 2的電流密度歷時60秒進行通電。 Here, cathodic electrolytic degreasing is carried out in the following manner: a 60 g/L sodium hydroxide aqueous solution is poured into an electrolytic cell as a degreasing solution and heated, the substrate 2 is immersed in the degreasing solution heated to 60°C and connected to the anode of the electrolytic cell, and power is applied at a current density of 2.5 A/ dm2 for 60 seconds.
此外,酸洗淨是藉由將實行陰極電解脫脂後的基材2歷時30秒地浸漬於室溫的10質量%的硫酸中來實行。In addition, the acid cleaning was performed by immersing the substrate 2 after the cathodic electrolytic degreasing in 10 mass % sulfuric acid at room temperature for 30 seconds.
之後,針對本發明例1~19、比較例3~7,利用以下所示的條件的電鍍覆,將粗糙化層5(或Cu層)形成於基材2的全部的面(表面、背面及側面)上。此時,針對本發明例14,使用膠帶在基材1的表面21實行覆蓋,藉此將Cu的粗糙化層5形成於基材2的表面21以外的面(背面22及側面23)上。此外,針對比較例3,使用膠帶在基材2的表面21及側面23實行覆蓋,藉此將Cu層僅形成於基材2的背面22後,藉由使Cu層接觸蝕刻溶液的液面,將形成於基材2的背面22的Cu層進行粗糙化。另一方面,針對比較例1、2,並未在基材2上形成表面覆膜3及側面覆膜4。Thereafter, for Examples 1 to 19 of the present invention and Comparative Examples 3 to 7, a roughened layer 5 (or a Cu layer) was formed on all surfaces (the front surface, the back surface, and the side surface) of the substrate 2 by electroplating under the conditions shown below. At this time, for Example 14 of the present invention, the surface 21 of the substrate 1 was covered with an adhesive tape, thereby forming a roughened layer 5 of Cu on surfaces other than the surface 21 of the substrate 2 (the back surface 22 and the side surface 23). Furthermore, for Comparative Example 3, the surface 21 and the side surface 23 of the substrate 2 were covered with an adhesive tape, thereby forming a Cu layer only on the back surface 22 of the substrate 2, and then the Cu layer formed on the back surface 22 of the substrate 2 was roughened by bringing the Cu layer into contact with the liquid surface of the etching solution. On the other hand, in Comparative Examples 1 and 2, the surface coating 3 and the side coating 4 are not formed on the substrate 2.
[粗糙化Cu鍍覆(表1記載的粗糙化層的「種類」為Cu時)] 針對本發明例1、2、4~17、19及比較例4~7,調製包含如下成分的水溶液作為電鍍覆液,將1L的電鍍覆液倒入內徑80 mm的筒狀的鍍覆電解槽,該等成分為:作為銅(Cu)金屬的濃度為表1所記載的10 g/L~50 g/L的範圍的金屬濃度的硫酸銅、60 g/L~180 g/L的硫酸、作為鉬(Mo)金屬的濃度為0.1 g/L~5.0 g/L的金屬濃度的鉬酸銨。繼而,針對本發明例1、2、4~17、19,藉由遮蔽板以相對於基材2的表面21及背面22的合計鍍覆面積遮蔽為表1記載的比例的面積的方式,在與反電極之間設置遮蔽板。另一方面,針對比較例4,以相對於基材2的表面21及背面22的合計鍍覆面積遮蔽40%的面積的方式,在與反電極之間設置遮蔽板。針對比較例5~7,以相對於基材2的表面21及背面22的合計鍍覆面積遮蔽5%的面積的方式,在與反電極之間設置遮蔽板。在此處,藉由在20℃~60℃的溫度中以20 A/dm 2~80 A/dm 2的電流密度進行通電來實行覆膜形成步驟,並藉由電鍍覆使表面覆膜3及側面覆膜4形成。 [Roughening Cu coating (when the "type" of the roughening layer recorded in Table 1 is Cu)] For Examples 1, 2, 4 to 17, 19 of the present invention and Comparative Examples 4 to 7, an aqueous solution containing the following components was prepared as an electroplating solution, and 1 L of the electroplating solution was poured into a cylindrical electrolytic cell with an inner diameter of 80 mm. The components were: copper sulfate having a metal concentration in the range of 10 g/L to 50 g/L as copper (Cu) metal, sulfuric acid having a metal concentration of 60 g/L to 180 g/L, and ammonium molybdate having a metal concentration of 0.1 g/L to 5.0 g/L as molybdenum (Mo) metal. Next, for Examples 1, 2, 4 to 17, and 19 of the present invention, a shielding plate was provided between the counter electrode in such a manner that the shielding plate shielded an area of the ratio described in Table 1 relative to the total coating area of the surface 21 and the back surface 22 of the substrate 2. On the other hand, for Comparative Example 4, a shielding plate was provided between the counter electrode in such a manner that 40% of the total coating area of the surface 21 and the back surface 22 of the substrate 2 was shielded. For Comparative Examples 5 to 7, a shielding plate was provided between the counter electrode in such a manner that 5% of the total coating area of the surface 21 and the back surface 22 of the substrate 2 was shielded. Here, the film forming step is performed by passing electricity at a temperature of 20°C to 60°C and a current density of 20 A/dm 2 to 80 A/dm 2 , and the surface film 3 and the side film 4 are formed by electroplating.
另一方面,針對比較例3,調製包含如下成分的水溶液作為電鍍覆液,將1L的電鍍覆液倒入內徑80 mm的筒狀的鍍覆電解槽,該等成分為:作為銅(Cu)金屬的濃度為250 g/L的金屬濃度的硫酸銅、50 g/L的硫酸、0.1 g/L的氯化鈉。此時,在與反電極之間並未設置遮蔽板。繼而,藉由在40℃的溫度中以60 A/dm 2的電流密度進行通電並藉由電鍍覆將Cu層形成為10 μm後,使形成於基材2的背面22的Cu層在40℃的溫度中接觸包含60 g/L的硫酸與40 mL/L的過氧化氫之蝕刻溶液的液面30秒,藉此使Cu層的表面進行粗糙化。 On the other hand, for Comparative Example 3, an aqueous solution containing the following components was prepared as an electroplating solution, and 1 L of the electroplating solution was poured into a cylindrical electrolytic cell with an inner diameter of 80 mm. The components were: copper sulfate with a metal concentration of 250 g/L as copper (Cu) metal, 50 g/L sulfuric acid, and 0.1 g/L sodium chloride. At this time, no shielding plate was set between the counter electrode and the electrode. Next, after a Cu layer is formed to 10 μm by electroplating while passing an electric current at a current density of 60 A/ dm2 at a temperature of 40°C, the Cu layer formed on the back side 22 of the substrate 2 is brought into contact with a liquid surface of an etching solution containing 60 g/L of sulfuric acid and 40 mL/L of hydrogen peroxide at a temperature of 40°C for 30 seconds, thereby roughening the surface of the Cu layer.
[粗糙化Ni鍍覆(表1記載的粗糙化層的「種類」為Ni時)] 調製包含如下成分的水溶液作為電鍍覆液:作為鎳(Ni)金屬的濃度為表1所記載的10 g/L~50 g/L的範圍的金屬濃度的硫酸鎳、10 g/L~30 g/L的硼酸、30 g/L~100 g/L的氯化鈉、10 mL/L~30 mL/L的25質量%氨水。繼而,將1L的電鍍覆液倒入內徑80 mm的筒狀的鍍覆電解槽,藉由遮蔽板以相對於基材2的表面21及背面22的合計鍍覆面積遮蔽為表1記載的比例的面積的方式,在與反電極之間設置遮蔽板。在此處,藉由在50℃~70℃的溫度中以5 A/dm 2~30 A/dm 2的電流密度進行通電來實行覆膜形成步驟,並藉由電鍍覆使表面覆膜3及側面覆膜4形成。 [Roughening Ni coating (when the "type" of the roughening layer listed in Table 1 is Ni)] An aqueous solution containing the following components is prepared as a plating solution: nickel sulfate having a metal concentration of 10 g/L to 50 g/L as nickel (Ni) metal listed in Table 1, 10 g/L to 30 g/L of boric acid, 30 g/L to 100 g/L of sodium chloride, and 10 mL/L to 30 mL/L of 25 mass % ammonia water. Then, 1 L of the plating solution is poured into a cylindrical plating electrolytic cell having an inner diameter of 80 mm, and a shielding plate is provided between the substrate 2 and the counter electrode in such a manner that the total plating area of the surface 21 and the back surface 22 of the substrate 2 is shielded by a shielding plate in a ratio listed in Table 1. Here, the film forming step is performed by passing electricity at a temperature of 50°C to 70°C at a current density of 5 A/dm 2 to 30 A/dm 2 , and the surface film 3 and the side film 4 are formed by electroplating.
繼而,針對本發明例15~19及比較例2、6、7,形成最表層即表面包覆層6。此時,利用以下所示的條件的電鍍覆,以成為表1所示的厚度的方式,將表面包覆層6形成於粗糙化層5的上表面50(針對比較例2為基材2的表面21、背面22及側面23)整面。如此操作,獲得本發明例及比較例的導線架材料。Next, for the present invention examples 15 to 19 and comparative examples 2, 6, and 7, the surface coating layer 6, which is the outermost layer, was formed. At this time, the surface coating layer 6 was formed on the entire upper surface 50 of the roughened layer 5 (the surface 21, the back surface 22, and the side surface 23 of the substrate 2 for comparative example 2) by electroplating under the conditions shown below so as to have the thickness shown in Table 1. In this way, the lead frame materials of the present invention examples and comparative examples were obtained.
[Ni鍍覆(表1記載的表面包覆層6的「種類」為Ni時)] 調製包含如下成分的水溶液作為電鍍覆液:作為鎳(Ni)金屬的濃度為500 g/L的範圍的金屬濃度的磺醯胺酸鎳、30 g/L的氯化鎳、30 g/L的硼酸。藉由將1L的電鍍覆液倒入內徑80 mm的筒狀的鍍覆電解槽,在50℃的溫度中以10 A/dm 2的電流密度進行通電,並藉由電鍍覆使表面包覆層6形成。 [Ni plating (when the "type" of the surface coating layer 6 listed in Table 1 is Ni)] An aqueous solution containing the following components was prepared as a plating solution: nickel sulfonamide with a metal concentration in the range of 500 g/L as the nickel (Ni) metal concentration, 30 g/L of nickel chloride, and 30 g/L of boric acid. 1 L of the plating solution was poured into a cylindrical plating electrolytic cell with an inner diameter of 80 mm, and current was passed at a temperature of 50°C with a current density of 10 A/ dm2 to form the surface coating layer 6 by electroplating.
[Pd鍍覆(表1記載的表面包覆層6的「種類」為Pd時)] 調製包含如下成分的水溶液作為電鍍覆液:作為鈀(Pd)金屬的濃度為45 g/L的範圍的金屬濃度的二氯化四胺鈀(Pd(NH 3) 4Cl 2) 、90 mL/L的25質量%氨水、50 g/L的硫酸氨、10 g/L的Parasigma LN光澤劑(商品名,松田產業股份有限公司製造)。藉由將1L的電鍍覆液倒入內徑80 mm的筒狀的鍍覆電解槽,在60℃的溫度中以5 A/dm 2的電流密度進行通電,並藉由電鍍覆使表面包覆層6形成。 [Pd coating (when the "type" of the surface coating layer 6 listed in Table 1 is Pd)] An aqueous solution containing the following components was prepared as a plating solution: tetraammonium dichloride palladium (Pd(NH 3 ) 4 Cl 2 ) having a metal concentration in the range of 45 g/L as the palladium (Pd) metal concentration, 90 mL/L of 25 mass % ammonia water, 50 g/L of ammonium sulfate, and 10 g/L of Parasigma LN glossing agent (trade name, manufactured by Matsuda Industrial Co., Ltd.). 1 L of the plating solution was poured into a cylindrical plating electrolytic cell having an inner diameter of 80 mm, and current was passed at a temperature of 60°C and a current density of 5 A/dm 2 to form the surface coating layer 6 by electroplating.
[Au鍍覆(表1記載的表面包覆層6的「種類」為Au時)] 調製包含如下成分的水溶液作為電鍍覆液:作為金(Au)金屬的濃度為14.6 g/L的範圍的金屬濃度的氰化金鉀、150 g/L的檸檬酸、180 g/L的檸檬酸鉀。藉由將1L的電鍍覆液倒入內徑80 mm的筒狀的鍍覆電解槽,在40℃的溫度中以1 A/dm 2的電流密度進行通電,並藉由電鍍覆使表面包覆層6形成。 [Au plating (when the "type" of the surface coating layer 6 listed in Table 1 is Au)] An aqueous solution containing the following components was prepared as a plating solution: potassium gold cyanide with a metal concentration in the range of 14.6 g/L as the gold (Au) metal concentration, 150 g/L of citric acid, and 180 g/L of potassium citrate. 1L of the plating solution was poured into a cylindrical plating electrolytic cell with an inner diameter of 80 mm, and current was passed at a temperature of 40°C with a current density of 1 A/ dm2 to form the surface coating layer 6 by electroplating.
[AuCo鍍覆(表1記載的表面包覆層6的「種類」為AuCo時)] 調製包含如下成分的水溶液作為電鍍覆液:作為金(Au)金屬的濃度為10 g/L的範圍的金屬濃度的氰化金鉀、作為鈷(Co)金屬的濃度為0.1 g/L的範圍的金屬濃度的碳酸鈷、作為100 g/L的檸檬酸、20 g/L的磷酸氫二鉀。藉由將1L的電鍍覆液倒入內徑80 mm的筒狀的鍍覆電解槽,在40℃的溫度中以1 A/dm 2的電流密度進行通電,並藉由電鍍覆使表面包覆層6形成。 [AuCo plating (when the "type" of the surface coating layer 6 listed in Table 1 is AuCo)] An aqueous solution containing the following components was prepared as a plating solution: potassium gold cyanide with a metal concentration in the range of 10 g/L as the gold (Au) metal concentration, cobalt carbonate with a metal concentration in the range of 0.1 g/L as the cobalt (Co) metal concentration, 100 g/L of citric acid, and 20 g/L of potassium dihydrogen phosphate. 1L of the plating solution was poured into a cylindrical plating electrolytic cell with an inner diameter of 80 mm, and current was passed at a temperature of 40°C with a current density of 1 A/ dm2 to form the surface coating layer 6 by electroplating.
[Ag鍍覆(表1記載的表面包覆層6的「種類」為Ag時)] 調製包含如下成分的水溶液作為電鍍覆液:作為銀(Ag)金屬的濃度為93 g/L的範圍的金屬濃度的氰化銀、132 g/L的氰化鉀。藉由將1L的電鍍覆液倒入內徑80 mm的筒狀的鍍覆電解槽,在20℃的溫度中以1 A/dm 2的電流密度進行通電,並藉由電鍍覆使表面包覆層6形成。 [Ag plating (when the "type" of the surface coating layer 6 listed in Table 1 is Ag)] An aqueous solution containing the following components was prepared as a plating solution: silver cyanide with a metal concentration in the range of 93 g/L as the concentration of silver (Ag) metal, and 132 g/L of potassium cyanide. 1L of the plating solution was poured into a cylindrical plating electrolytic cell with an inner diameter of 80 mm, and current was passed at a temperature of 20°C with a current density of 1 A/ dm2 to form the surface coating layer 6 by electroplating.
[Sn鍍覆(表1記載的表面包覆層6的「種類」為Sn時)] 調製包含如下成分的水溶液作為電鍍覆液:作為錫(Sn)金屬的濃度為80 g/L的範圍的金屬濃度的硫酸錫、50 mL/L的硫酸、5 mL/L的UTB513Y。藉由將1L的電鍍覆液倒入內徑80 mm的筒狀的鍍覆電解槽,在20℃的溫度中以5 A/dm 2的電流密度進行通電,並藉由電鍍覆使表面包覆層6形成。 [Sn plating (when the "type" of the surface coating layer 6 listed in Table 1 is Sn)] An aqueous solution containing the following components was prepared as an electroplating solution: tin sulfate having a metal concentration in the range of 80 g/L as the concentration of tin (Sn) metal, 50 mL/L of sulfuric acid, and 5 mL/L of UTB513Y. 1L of the electroplating solution was poured into a cylindrical electrolytic cell with an inner diameter of 80 mm, and current was passed at a temperature of 20°C with a current density of 5 A/ dm2 to form the surface coating layer 6 by electroplating.
<各種測定及評價方法> 繼而,如以下操作來將所獲得的各層及導線架材料1的特性進行測定及評價。再者,針對所獲得的各層的特性,在製作導線架材料1的過程中進行隨時測定。 <Various measurement and evaluation methods> Then, the characteristics of each layer and the lead frame material 1 obtained are measured and evaluated as follows. Furthermore, the characteristics of each layer obtained are measured at any time during the process of manufacturing the lead frame material 1.
[1]表面覆膜的平均粗糙度高度h 1與側面覆膜的平均粗糙度高度h 2的測定 表面覆膜3的平均粗糙度高度h 1,是針對將包含表面覆膜3的厚度方向之截面進行顯微切片加工而成者,使用掃描式電子顯微鏡(SEM)觀察來求出。在此處,藉由SEM進行的觀察,針對形成於基材2的表面21的表面覆膜3與形成於背面22的表面覆膜3,將覆膜上呈連續的共10個的凹凸當作1個視野,然後隨機選擇分別的共3個視野的SEM影像,針對共3個視野的SEM影像,分別利用在通過凹凸的最高點(覆膜的上表面的最高點)的基材2的表面(或背面)平行地畫出的假想線、與在通過凹凸的最低點(覆膜的上表面的最低點)的基材2的表面(或背面)平行地畫出的假想線來劃分出評價區域M1,在該評價區域M1處,計算表面覆膜3所佔的部分(表面覆膜3的存在區域P1)的面積。覆膜部分P的面積的計算,能夠藉由二值化處理來實行,該二值化處理是使用影像處理軟體Image J,分別將下限閾值設為128、將上限閾值設為255,利用二值化的設定,一方面排除分離點,另一方面將覆膜部分P的內部上色。將此時所獲得的覆膜部分P1的面積除以整條線的長度(10個凹凸的寬度)L1而得的數值求出來作為每一視野的表面覆膜3的平均粗糙度高度。在此處,在基材2的表面21及背面22兩處形成有表面覆膜3的示例中,將表面21側的共3個視野及背面22側的共3個視野之合計共6個視野的表面覆膜3的平均粗糙度高度進行平均,來設為表面覆膜3的平均粗糙度高度h 1。此外,在基材2的表面21或背面22的其中一處形成有表面覆膜3的示例中,將形成有表面覆膜3之側的共3個視野的表面覆膜3的平均粗糙度高度進行平均,來設為表面覆膜3的平均粗糙度高度h 1。將結果顯示於表1。 [1] Measurement of Average Roughness Height h1 of Surface Film and Average Roughness Height h2 of Side Film The average roughness height h1 of the surface film 3 is determined by microtome-processing a cross section including the thickness direction of the surface film 3 and observing it using a scanning electron microscope (SEM). Here, observations are made by SEM, and for the surface coating 3 formed on the surface 21 of the substrate 2 and the surface coating 3 formed on the back side 22, a total of 10 continuous bumps on the coating are regarded as one field of view, and then SEM images of a total of 3 fields of view are randomly selected. For the SEM images of a total of 3 fields of view, an evaluation area M1 is demarcated using an imaginary line drawn parallel to the surface (or back side) of the substrate 2 passing through the highest point of the bumps (the highest point of the upper surface of the coating) and an imaginary line drawn parallel to the surface (or back side) of the substrate 2 passing through the lowest point of the bumps (the lowest point of the upper surface of the coating). In the evaluation area M1, the area occupied by the surface coating 3 (the area P1 where the surface coating 3 exists) is calculated. The area of the coating part P can be calculated by binarization using the image processing software Image J. The lower threshold is set to 128 and the upper threshold is set to 255. The separation points are excluded by the binarization settings, and the inside of the coating part P is colored. The area of the coating part P1 obtained at this time is divided by the length of the entire line (the width of 10 concavities) L1 to obtain the value obtained as the average roughness height of the surface coating 3 in each field of view. Here, in the example where the surface film 3 is formed at both the surface 21 and the back surface 22 of the substrate 2, the average roughness heights of the surface film 3 in a total of 6 fields of view, which are 3 fields of view on the surface 21 side and 3 fields of view on the back surface 22 side, are averaged to be the average roughness height h 1 of the surface film 3. In addition, in the example where the surface film 3 is formed at one of the surface 21 or the back surface 22 of the substrate 2, the average roughness heights of the surface film 3 in a total of 3 fields of view on the side where the surface film 3 is formed are averaged to be the average roughness height h 1 of the surface film 3. The results are shown in Table 1.
此外,側面覆膜4的平均粗糙度高度h 2,是針對形成於側面23的側面覆膜4,將覆膜上呈連續的共10個的凹凸當作1個視野,然後隨機選擇分別的共3個視野,分別針對共3個視野,以與表面覆膜3的平均粗糙度高度h 1的測定同樣地操作,計算在評價區域M2中側面覆膜4所佔的部分的面積。將此時所獲得的覆膜部分P2的面積除以整條線的長度(10個凹凸的寬度)L2而得的數值求出來作為每一視野的側面覆膜4的平均粗糙度高度,將共3個視野的側面覆膜4的平均粗糙度高度進行平均,來設為側面覆膜4的平均粗糙度高度h 2。 In addition, the average roughness height h 2 of the side film 4 is obtained by taking a total of 10 continuous concavities and convexities on the side film 4 formed on the side surface 23 as one field of view, and then randomly selecting a total of 3 fields of view. For the total of 3 fields of view, the area of the portion occupied by the side film 4 in the evaluation area M2 is calculated in the same manner as the measurement of the average roughness height h 1 of the surface film 3. The value obtained by dividing the area of the coating portion P2 obtained at this time by the length of the entire line (the width of 10 concavities) L2 is obtained as the average roughness height of the side coating 4 in each field of view, and the average roughness heights of the side coating 4 in three fields of view are averaged to be set as the average roughness height h2 of the side coating 4.
進一步,基於表面覆膜3的平均粗糙度高度h 1與側面覆膜4的平均粗糙度高度h 2的結果,求出側面覆膜4的平均粗糙度高度h 2相對於表面覆膜3的平均粗糙度高度h 1之比h 2/h 1、與基材2的厚度T相對於側面覆膜4的平均粗糙度高度h 2之比(T/h 2比)。將結果顯示於表1。 Furthermore, based on the results of the average roughness height h1 of the surface coating 3 and the average roughness height h2 of the side coating 4, the ratio h2 / h1 of the average roughness height h2 of the side coating 4 to the average roughness height h1 of the surface coating 3 and the ratio of the thickness T of the substrate 2 to the average roughness height h2 of the side coating 4 (T/ h2 ratio) were calculated. The results are shown in Table 1.
[2]第一空隙率V 1及第二空隙率V 2的測定 第一空隙率V 1使用用於上述的「[1]表面覆膜的平均粗糙度高度h 1與側面覆膜的平均粗糙度高度h 2的測定」的SEM影像,分別針對形成於表面21的表面覆膜3與形成於背面22的表面覆膜3,計算自評價區域M1的面積減去表面覆膜3的存在區域P1的面積後所得的空隙部分(表面覆膜3的不存在區域S1)的面積相對於整個評價區域M1的面積之比例,來求出每一視野的空隙率。亦即,每一視野的表面覆膜3的空隙率藉由以下的公式(1)算出。 表面覆膜3的空隙率(%)=100×{(評價區域M1的面積)-(表面覆膜3的存在區域P1的面積)}/(評價區域M1的面積)・・・(1) 基於該等的每一視野的空隙率,在基材2的表面21及背面22兩處形成有表面覆膜3之示例中,將表面21側的共3個視野及背面22側的共3個視野之合計共6個視野的表面覆膜3的平均粗糙度高度進行平均,來設為第一空隙率V 1(%)。此外,在基材2的表面21或背面22其中一處形成有表面覆膜3之示例中,將形成有表面覆膜3之側的共3個視野的表面覆膜3的空隙率進行平均,來設為第一空隙率V 1(%)。 [2] Determination of the first porosity V1 and the second porosity V2 The first porosity V1 is determined by using the SEM image used in the above-mentioned "[1] Determination of the average roughness height h1 of the surface film and the average roughness height h2 of the side film". For the surface film 3 formed on the surface 21 and the surface film 3 formed on the back surface 22, the ratio of the area of the void portion (the area S1 where the surface film 3 does not exist) obtained by subtracting the area of the area P1 where the surface film 3 exists from the area of the evaluation area M1 to the area of the entire evaluation area M1 is calculated to obtain the porosity of each field of view. That is, the porosity of the surface film 3 in each field of view is calculated by the following formula (1). Porosity of surface film 3 (%) = 100 × {(area of evaluation region M1) - (area of region P1 where surface film 3 exists)} / (area of evaluation region M1) ・・・(1) Based on the porosity of each field of view, in an example where surface film 3 is formed on both surface 21 and back surface 22 of substrate 2, the average roughness height of surface film 3 in 3 fields on surface 21 side and 3 fields on back surface 22 side, a total of 6 fields, is averaged to be the first porosity V 1 (%). In addition, in an example where surface film 3 is formed on either surface 21 or back surface 22 of substrate 2, the porosity of surface film 3 in 3 fields on the side where surface film 3 is formed is averaged to be the first porosity V 1 (%).
此外,第二空隙率V 2使用用於上述的「[1]表面覆膜的平均粗糙度高度h 1與側面覆膜的平均粗糙度高度h 2的測定」的SEM影像,針對形成於側面23的側面覆膜4,計算自評價區域M2的面積減去側面覆膜4的存在區域P2的面積後所得的空隙部分(側面覆膜4的不存在區域S2)的面積相對於整個評價區域M2的面積之比例,來求出每一視野的空隙率。亦即,每一視野的側面覆膜4的空隙率藉由以下的公式(2)算出。 側面覆膜4的空隙率(%)=100×{(評價區域M2的面積)-(側面覆膜4的存在區域P2的面積)}/(評價區域M2的面積)・・・(2) 基於該等的每一視野的空隙率,將共3個視野的側面覆膜4的空隙率進行平均,來設為第二空隙率V 2(%)。 In addition, the second porosity V2 is calculated by using the SEM image used in the above-mentioned "[1] Measurement of the average roughness height h1 of the surface film and the average roughness height h2 of the side film" to calculate the ratio of the area of the void portion (the area S2 where the side film 4 does not exist) to the area of the entire evaluation area M2, which is obtained by subtracting the area of the area P2 where the side film 4 exists from the area of the evaluation area M2, to obtain the porosity for each field of view. That is, the porosity of the side film 4 for each field of view is calculated by the following formula (2). Porosity of side coating 4 (%) = 100 × {(area of evaluation region M2) - (area of region P2 where side coating 4 exists)} / (area of evaluation region M2) ... (2) Based on the porosity of each field of view, the porosity of side coating 4 in three fields of view is averaged to obtain a second porosity V2 (%).
進一步,基於所獲得的第一空隙率V 1與第二空隙率V 2的結果,求出第二空隙率V 2相對於第一空隙率V 1之比V 2/V 1。將結果顯示於表1。 Furthermore, based on the obtained results of the first porosity V1 and the second porosity V2 , the ratio V2 / V1 of the second porosity V2 to the first porosity V1 was calculated. The results are shown in Table 1.
[3]表面包覆層的厚度的測定 表面包覆層6的厚度,藉由依據日本工業規格JIS H8501:1999的螢光X射線式試驗方法來測定。具體而言,使用螢光X射線膜厚計(SFT9400,SII Technologies Ltd.製造),將準直器直徑設為0.5 mm,測定各層的任意10處,計算出該等的測定值的平均值,藉此獲得表面包覆層6的厚度。將結果顯示於表1。 [3] Measurement of the thickness of the surface coating layer The thickness of the surface coating layer 6 was measured by a fluorescent X-ray test method in accordance with Japanese industrial standard JIS H8501:1999. Specifically, a fluorescent X-ray film thickness meter (SFT9400, manufactured by SII Technologies Ltd.) was used, and the collimator diameter was set to 0.5 mm. Ten random locations of each layer were measured, and the average of the measured values was calculated to obtain the thickness of the surface coating layer 6. The results are shown in Table 1.
[4]氣密性的評價 第7圖顯示針對本發明例的導線架材料實行的與樹脂的密接性的測定時的導線架材料1與樹脂的位置關係的示意圖。針對由本發明例及比較例所獲得的導線架材料1,如第7圖所示,針對以覆蓋導線架材料1的方式利用樹脂7進行壓模成形的結構體實行總洩漏試驗。在此處,總洩漏試驗是將上述結構體浸漬於已加熱為120℃±10℃的高沸點溶劑即Fluorinert FC-40(註冊商標)中30秒或120秒,藉由在浸漬時是否產生氣泡,來判定有無來自導線架材料1的空氣的洩漏,基於其判定結果來評價導線架材料1的氣密性。 [4] Evaluation of airtightness FIG. 7 is a schematic diagram showing the positional relationship between the lead frame material 1 and the resin when measuring the adhesion between the lead frame material of the present invention and the resin. As shown in FIG. 7, a total leakage test was performed on the lead frame material 1 obtained by the present invention and the comparative example, and the structure formed by die-casting with the resin 7 in a manner covering the lead frame material 1. Here, the total leakage test is to immerse the above structure in a high boiling point solvent, Fluorinert FC-40 (registered trademark), heated to 120℃±10℃ for 30 seconds or 120 seconds, and determine whether there is air leakage from the lead frame material 1 by whether bubbles are generated during immersion. The airtightness of the lead frame material 1 is evaluated based on the determination result.
在此處,將針對利用樹脂進行將導線架材料1進行壓模成形的結構體實行總洩漏試驗所獲得的氣密性的評價結果,設為初期的結構體的氣密性。繼而,針對利用樹脂7將導線架材料1進行壓模成形的結構體,實行熱循環試驗,該熱循環試驗是重複50次循環,該循環為保持於-50℃的溫度中保持30分鐘後立刻在105℃的溫度中保持30分鐘,然後將針對實行熱循環試驗後的結構體實行總洩漏試驗所獲得的氣密性的評價結果,設為熱循環試驗後的結構體的氣密性。Here, the evaluation result of the airtightness obtained by the total leakage test on the structure formed by the lead frame material 1 by the resin is set as the airtightness of the initial structure. Then, the heat cycle test is performed on the structure formed by the lead frame material 1 by the resin 7. The heat cycle test is repeated 50 times. The cycle is kept at a temperature of -50°C for 30 minutes and then kept at a temperature of 105°C for 30 minutes. The evaluation result of the airtightness obtained by the total leakage test on the structure after the heat cycle test is set as the airtightness of the structure after the heat cycle test.
有關初期的結構體的氣密性與熱循環試驗後的結構體的氣密性,分別進行如下評價:將開始浸漬於高沸點溶劑起的120秒沒有產生氣泡的情況,在氣密性方面視為特別優異而評價為「A」,將開始浸漬於高沸點溶劑起的30秒沒有產生氣泡但是在開始浸漬起的120秒以內產生氣泡的情況,在氣密性方面視為優異而評價為「B」,將開始浸漬於高沸點溶劑起30秒以內產生氣泡的情況,在氣密性較低這點視為不期望而評價為「C」。將結果顯示於表2。The airtightness of the initial structure and the airtightness of the structure after the thermal cycle test were evaluated as follows: if no bubbles were generated within 120 seconds from the start of immersion in the high boiling point solvent, the airtightness was considered to be particularly excellent and evaluated as "A", if no bubbles were generated within 30 seconds from the start of immersion in the high boiling point solvent but bubbles were generated within 120 seconds from the start of immersion, the airtightness was considered to be excellent and evaluated as "B", and if bubbles were generated within 30 seconds from the start of immersion in the high boiling point solvent, the airtightness was considered to be low and undesirable and evaluated as "C". The results are shown in Table 2.
[5]有關落粉量的測定及評價 針對由本發明例及比較例所獲得的導線架材料1,將導線架材料切割為寬度60 mm,實行日本工業規格JIS H 8504所規定的膠帶剝離試驗,將試驗前後的質量的減少量作為脫離量(落粉量)來進行測定及評價。針對測定出的脫離量,將小於3 mg/dm 2的情況,在不易發生落粉這點上視為特別優異而評價為「A」。此外,將脫離量為3 mg/dm 2以上且小於12 mg/dm 2的範圍,在不易發生落粉這點上視為優異而評價為「B」。另一方面,將脫離量為12 mg/dm 2以上的範圍,在容易引發落粉這點上視為不期望而評價為「C」。將結果顯示於表2。 [5] Measurement and evaluation of the amount of powder falling The lead frame material 1 obtained from the present invention example and the comparative example was cut into pieces with a width of 60 mm and subjected to the tape peeling test specified in Japanese Industrial Standard JIS H 8504. The amount of weight reduction before and after the test was measured and evaluated as the amount of powder falling. For the measured amount of powder falling, a value of less than 3 mg/ dm2 was considered to be particularly excellent in that powder falling was not likely to occur and was evaluated as "A". In addition, a value of powder falling within the range of 3 mg/ dm2 or more and less than 12 mg/ dm2 was considered to be excellent in that powder falling was not likely to occur and was evaluated as "B". On the other hand, the range of the shedding amount of 12 mg/dm 2 or more was considered undesirable because it was likely to cause powder falling and was evaluated as "C". The results are shown in Table 2.
[6] 綜合評價 該等評價結果之中,針對初期的結構體的氣密性、熱循環試驗後的結構體的氣密性、有關落粉量的3個評價結果,將3者皆評價為「A」的情況,在熱循環試驗的前後任何時候皆為氣密性高且不易發生落粉這點上視為特別優異而評價為「A」。此外,針對該等3個評價結果,將3者皆評價為「A」或「B」的情況(但是,不包括3者皆評價為「A」的情況),在熱循環試驗的前後任何時候皆為氣密性高且不易發生落粉這點上視為優異而評價為「B」。另一方面,針對該等3個評價結果,將至少任一評價結果被評價為「C」的情況,視為在耐熱循環試驗的前後中的至少任一者的氣密性不合格或容易引發落粉這點上不合格而評價為「C」。將結果顯示於表2。 [6] Comprehensive evaluation Among the evaluation results, for the three evaluation results of the initial structural airtightness, the structural airtightness after the thermal cycle test, and the amount of powder falling, if all three were evaluated as "A", it was considered to be particularly excellent in that the airtightness was high and powder falling was not likely to occur at any time before and after the thermal cycle test, and was evaluated as "A". In addition, for the three evaluation results, if all three were evaluated as "A" or "B" (but excluding the case where all three were evaluated as "A"), it was considered to be excellent in that the airtightness was high and powder falling was not likely to occur at any time before and after the thermal cycle test, and was evaluated as "B". On the other hand, for the three evaluation results, if at least one of the evaluation results is evaluated as "C", it is considered that the airtightness of at least one of the before and after heat cycle tests is unqualified or it is easy to cause powder falling and is evaluated as "C". The results are shown in Table 2.
[7]有關耐熱循環性的評價 進一步,針對初期的結構體的氣密性、熱循環試驗後的結構體的氣密性的評價結果,將初期的氣密性評價為「A」或「B」且熱循環試驗後的氣密性評價為「A」的情況、與初期的氣密性評價為「B」且熱循環試驗後的氣密性評價為「B」的情況,視為結構體在耐熱循環性方面特別優異而評價為「A」。此外,將初期的氣密性評價為「A」且熱循環試驗的氣密性評價為「B」的情況,視為結構體在耐熱循環性方面優異而評價為「B」。另一方面,將初期與熱循環試驗後的氣密性中的至少任一評價結果被評價為「C」的情況,在耐熱循環性較低這點視為不期望而評價為「C」。將結果顯示於表2。 [7] Evaluation of heat cycle resistance Furthermore, with respect to the evaluation results of the airtightness of the initial structure and the airtightness of the structure after the heat cycle test, the case where the initial airtightness is evaluated as "A" or "B" and the airtightness after the heat cycle test is evaluated as "A", and the case where the initial airtightness is evaluated as "B" and the airtightness after the heat cycle test is evaluated as "B", the structure is regarded as being particularly excellent in heat cycle resistance and is evaluated as "A". In addition, the case where the initial airtightness is evaluated as "A" and the airtightness after the heat cycle test is evaluated as "B", the structure is regarded as being excellent in heat cycle resistance and is evaluated as "B". On the other hand, when at least one of the evaluation results of the initial airtightness and the airtightness after the heat cycle test is evaluated as "C", the heat cycle resistance is considered to be low and is evaluated as "C". The results are shown in Table 2.
[表1] [Table 1]
[表2] [Table 2]
基於表1及表2的結果,本發明例1~19的導線架材料1,表面覆膜3及側面覆膜4皆具有經粗糙化的上表面的同時,側面覆膜4的平均粗糙度高度h 2相對於表面覆膜3的平均粗糙度高度h 1之比h 2/h 1在本發明的適當範圍內。此時,本發明例1~19的導線架材料1,在初期的結構體的氣密性、熱循環試驗後的結構體的氣密性、有關落粉量的3個評價結果皆被評價為「A」或「B」,在綜合評價中也被評價為「A」或「B」。 Based on the results of Table 1 and Table 2, the lead frame materials 1 of Examples 1 to 19 of the present invention have both the surface coating 3 and the side coating 4 with roughened upper surfaces, and the ratio of the average roughness height h2 of the side coating 4 to the average roughness height h1 of the surface coating 3 is within the appropriate range of the present invention. At this time, the lead frame materials 1 of Examples 1 to 19 of the present invention were evaluated as " A " or "B" in the three evaluation results of the airtightness of the initial structure, the airtightness of the structure after the heat cycle test, and the amount of powder falling, and were also evaluated as "A" or "B" in the comprehensive evaluation.
第8圖中顯示本發明例1的導線架材料的截面的藉由SEM觀察到的二次電子影像。根據第8圖的二次電子影像也可知:本發明例1的導線架材料在表面覆膜3及側面覆膜4皆具有經粗糙化的上表面,此外,比起形成於基材2的表面21的表面覆膜3的平均粗糙度高度,形成於基材2的側面23的側面覆膜4的平均粗糙度高度明顯較大。FIG8 shows a secondary electron image of a cross section of the lead frame material of Example 1 of the present invention observed by SEM. It can also be seen from the secondary electron image of FIG8 that the lead frame material of Example 1 of the present invention has a roughened upper surface in both the surface coating 3 and the side coating 4, and that the average roughness height of the side coating 4 formed on the side surface 23 of the substrate 2 is significantly greater than the average roughness height of the surface coating 3 formed on the surface 21 of the substrate 2.
從而,本發明例1~19的導線架材料1皆為在綜合評價中被評價為「A」或「B」者,因此至少在預設為極端的使用環境的熱循環的情況下,仍能夠改善封裝體的氣密性且不易發生落粉。Therefore, the lead frame materials 1 of Examples 1 to 19 of the present invention are all rated "A" or "B" in the comprehensive evaluation, and therefore, at least under the condition of thermal cycle, which is a preset extreme use environment, they can still improve the airtightness of the package and are less likely to cause powder falling.
尤其是,本發明例1~5、7、12~19的導線架材料1,第一空隙率V 1及第二空隙率V 2皆在32%以上且64%以下的範圍,且第二空隙率V 2相對於第一空隙率V 1之比V 2/V 1在0.50以上且0.91以下的範圍,此時,在結構體的耐熱循環性的評價中被評價為「A」,因此在更進一步不易發生因耐熱循環試驗所造成的氣密性的降低這點上特別優異。 In particular, the lead frame materials 1 of Examples 1 to 5, 7, and 12 to 19 of the present invention have a first porosity V1 and a second porosity V2 both in the range of 32% or more and 64% or less, and a ratio V2 / V1 of the second porosity V2 to the first porosity V1 in the range of 0.50 or more and 0.91 or less. In this case, they are rated "A" in the evaluation of the heat cycle resistance of the structure, and are particularly excellent in that the airtightness is less likely to be reduced due to the heat cycle test.
另一方面,比較例1及比較例2的導線架材料,皆不具有表面覆膜3及側面覆膜4中任一者,此外,比較例3~7的側面覆膜4的平均粗糙度高度h 2相對於表面覆膜3的平均粗糙度高度h 1之比h 2/h 1皆在本發明的適當範圍外。因此,比較例1~7的導線架材料,在初期的結構體的氣密性、熱循環試驗後的結構體的氣密性、有關落粉量的3個評價結果中,至少任一者的評價結果為「C」,在綜合評價中也被評價為「C」。 On the other hand, the lead frame materials of Comparative Examples 1 and 2 do not have any of the surface coating 3 and the side coating 4. In addition, the ratio h 2 /h 1 of the average roughness height h 2 of the side coating 4 to the average roughness height h 1 of the surface coating 3 of Comparative Examples 3 to 7 is outside the appropriate range of the present invention. Therefore, the lead frame materials of Comparative Examples 1 to 7 have at least one of the three evaluation results of "C" in the initial structure airtightness, the structure airtightness after the heat cycle test, and the amount of powder falling, and are also evaluated as "C" in the comprehensive evaluation.
1,1A:導線架材料 2:基體(或基材) 21:基體的表面 22:基體的背面 23:基體的側面 3,3A:表面覆膜 30:表面覆膜的上表面 4:側面覆膜 40:側面覆膜的上表面 5:粗糙化層 50:粗糙化層的上表面 6:表面包覆層 7:樹脂 h 1:表面覆膜的平均粗糙度高度 h 2:側面覆膜的平均粗糙度高度 A1:表面覆膜的上表面的最高點 B1:表面覆膜的上表面的最低點 P1:在評價區域中佔據的表面覆膜的存在區域 S1:在評價區域中佔據的表面覆膜的不存在區域 A2:側面覆膜的上表面的最高點 B2:側面覆膜的上表面的最低點 P2:在評價區域中佔據的側面覆膜的存在區域 S1:在評價區域中佔據的側面覆膜的不存在區域 L1,L2:整條線的長度(10個凹凸的寬度) l 1,l 2,n 1,n 2,m 2:假想線 M1,M2:評價區域 T:厚度 1,1A: lead frame material 2: substrate (or base material) 21: substrate surface 22: substrate back 23: substrate side 3,3A: surface coating 30: upper surface of surface coating 4: side coating 40: upper surface of side coating 5: roughening layer 50: upper surface of roughening layer 6: surface coating layer 7: resin h1 : average roughness height of surface coating h2 : Average roughness height of the side coating A1: Highest point of the upper surface of the surface coating B1: Lowest point of the upper surface of the surface coating P1: Area of the surface coating present in the evaluation area S1: Area of the surface coating not present in the evaluation area A2: Highest point of the upper surface of the side coating B2: Lowest point of the upper surface of the side coating P2: Area of the side coating present in the evaluation area S1: Area of the side coating not present in the evaluation area L1, L2: Length of the entire line (width of 10 concavities) l 1 , l 2 , n 1 , n 2, m 2 : Imaginary lines M1, M2: Evaluation area T: Thickness
第1圖是顯示本發明的實施形態的導線架材料的部分的概要截面圖。 第2圖是顯示與第1圖相同構成的導線架材料中的形成於基體的表面的表面覆膜的截面圖,並且是用以說明表面覆膜的上表面與假想線l 1、n 1之關係及假想線m 1與表面覆膜的平均粗糙度高度h 1之關係的圖。 第3圖是顯示形成於基體的表面且與第2圖相同構成的表面覆膜中的評價區域M1的截面圖,並且是用以說明假想線l 1、n 1與評價區域M1之關係以及評價區域M1與表面覆膜的存在區域P1及表面覆膜的不存在區域S1之關係的圖。 第4圖是顯示與第1圖相同構成的導線架材料中的形成於基體的側面的側面覆膜的截面圖,並且是用以說明表面覆膜的上表面與假想線l 2、n 2之關係及假想線m 2與表面覆膜的平均粗糙度高度h 2之關係的圖。 第5圖是顯示形成於基體的側面且與第4圖相同構成的側面覆膜中的評價區域M2的截面圖,並且是用以說明假想線l 2、n 2與評價區域M2之關係以及評價區域M2與表面覆膜的存在區域P2及表面覆膜的不存在區域S2之關係的圖。 第6圖是顯示本發明的其他實施形態的導線架材料的概要的截面圖。 第7圖是顯示針對本發明例的導線架材料實行的與樹脂的密接性的測定時的導線架材料與樹脂的位置關係的示意圖。 第8圖是本發明例1的導線架材料的截面的藉由SEM(掃描式電子顯微鏡)觀察到的二次電子影像。 FIG. 1 is a schematic cross-sectional view of a portion of a lead frame material according to an embodiment of the present invention. FIG. 2 is a cross-sectional view showing a surface coating formed on a surface of a substrate in a lead frame material having the same structure as FIG. 1, and is a view for explaining the relationship between the upper surface of the surface coating and imaginary lines l 1 and n 1, and the relationship between the imaginary line m 1 and the average roughness height h 1 of the surface coating. FIG. 3 is a cross-sectional view showing an evaluation region M1 in a surface coating having the same structure as FIG. 2, and is a view for explaining the relationship between the imaginary lines l 1 and n 1 and the evaluation region M1, and the relationship between the evaluation region M1 and a region P1 where the surface coating exists and a region S1 where the surface coating does not exist. FIG. 4 is a cross-sectional view showing a side coating formed on the side surface of a substrate in a lead frame material having the same structure as FIG. 1, and is a view for explaining the relationship between the upper surface of the surface coating and the imaginary lines l 2 and n 2, and the relationship between the imaginary line m 2 and the average roughness height h 2 of the surface coating. FIG. 5 is a cross-sectional view showing an evaluation area M2 in a side coating formed on the side surface of a substrate and having the same structure as FIG. 4, and is a view for explaining the relationship between the imaginary lines l 2 and n 2 and the evaluation area M2, and the relationship between the evaluation area M2 and the surface coating presence area P2 and the surface coating absence area S2. FIG. 6 is a cross-sectional view showing an outline of a lead frame material according to another embodiment of the present invention. Fig. 7 is a schematic diagram showing the positional relationship between the lead frame material and the resin when the adhesion between the lead frame material and the resin is measured. Fig. 8 is a secondary electron image of the cross section of the lead frame material of Example 1 of the present invention observed by SEM (scanning electron microscope).
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic storage information (please note in the order of storage institution, date, and number) None Foreign storage information (please note in the order of storage country, institution, date, and number) None
1:導線架材料 1: Lead frame material
2:基體(或基材) 2: Matrix (or base material)
21:基體的表面 21: Surface of substrate
22:基體的背面 22: The back of the substrate
23:基體的側面 23: Side of the substrate
3:表面覆膜 3: Surface coating
30:表面覆膜的上表面 30: Upper surface of the surface coating
4:側面覆膜 4: Side coating
40:側面覆膜的上表面 40: Upper surface of the side coating
5:粗糙化層 5: Roughening layer
T:厚度 T:Thickness
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TW113122037A TW202501763A (en) | 2023-06-16 | 2024-06-14 | Lead frame material and manufacturing method thereof, and semiconductor package |
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WO (1) | WO2024257796A1 (en) |
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DE102014211298A1 (en) * | 2014-06-13 | 2015-12-17 | Robert Bosch Gmbh | Substrate with a surface coating and method for coating a surface of a substrate |
JP6685112B2 (en) * | 2015-11-18 | 2020-04-22 | 株式会社三井ハイテック | Lead frame, lead frame package, and manufacturing method thereof |
JP6736719B1 (en) * | 2019-03-28 | 2020-08-05 | 大口マテリアル株式会社 | Semiconductor element mounting parts, lead frame and semiconductor element mounting substrate |
WO2023033126A1 (en) * | 2021-09-03 | 2023-03-09 | 大日本印刷株式会社 | Lead frame and manufacturing method therefor |
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2024
- 2024-06-12 WO PCT/JP2024/021338 patent/WO2024257796A1/en unknown
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