TW202449182A - Alloy materials and contact probes - Google Patents

Abstract

The contact probe according to the present invention is a contact probe that makes contact with a component and, when the weight ratio of silver (Ag) is taken as X wt%, the weight ratio of copper (Cu) is taken as Y wt%, and the weight ratio of platinum (Pt) is taken as Z wt%, X, Y, and Z of at least the part that makes contact with the component are within a composition range that includes values on line segments bounded by line segments connecting each point of the following compositions (X=75, Y=5, Z=20), (X=20, Y=5, Z=75), (X=5, Y=20, Z=75), (X=5, Y=60, Z=35), (X=75, Y=13, Z=12), and the remainder consists of unavoidable impurities.

Description

Alloy materials and contact probes

The present invention relates to an alloy material and a contact probe.

In the past, when conducting a continuity test or operating characteristic test on an inspection object such as a semiconductor integrated circuit or a liquid crystal panel, a conductive contact probe was used to attempt to electrically connect the inspection object to a signal processing device on a circuit board that outputs a test signal. In order to conduct an accurate continuity test or operating characteristic test, it is required to accurately input and output the test signal through the contact probe.

The contact probe is used to repeatedly contact the inspection object such as semiconductor integrated circuits or liquid crystal display devices. If the contact probe is degraded due to oxidation or wear due to repeated use, it will affect the inspection results. Therefore, the material used for the contact probe is required to have high electrical conductivity, corrosion resistance, and good oxidation resistance. It is known that in order to meet these characteristics, a material containing 20 to 50 mass% of palladium (Pd) is used to increase the hardness (for example, refer to patent documents 1 and 2).

Patent document 1: International Publication No. 2013/099682 Patent document 2: Japanese Patent Gazette No. 4878401

However, when the contact target of the contact probe is a product containing tin (Sn) (such as BGA (Ball Grid Array), etc.), if the inspection is performed at a high temperature of, for example, around 175°C, the chemical wear caused by the reaction between tin (Sn) and Pd in the solder will have a greater impact than mechanical wear.

The present invention is made in view of the above situation, and its purpose is to provide an alloy material and a contact probe that have high Sn reactivity resistance and can inhibit chemical wear.

In order to solve the above problems and achieve the purpose, in the alloy material of the present invention, when the weight ratio of silver (Ag) is set to X weight%, the weight ratio of copper (Cu) is set to Y weight%, and the weight ratio of platinum (Pt) is set to Z weight%, X, Y, and Z are in a composition range surrounded by a line segment connecting the points of the following compositions (X=75, Y=5, Z=20), (X=20, Y=5, Z=75), (X=5, Y=20, Z=75), (X=5, Y=60, Z=35), (X=75, Y=13, Z=12) and including the values on the line segment, and the rest is composed of inevitable impurities.

In addition, in the alloy material of the present invention in the above invention, X, Y, and Z are within a composition range enclosed by a line segment connecting the points of the following compositions: (X=75, Y=13, Z=12), (X=75, Y=5, Z=20), (X=60, Y=5, Z=35), (X=27, Y=13, Z=60), (X=5, Y=35, Z=60), (X=5, Y=40, Z=55), and (X=35, Y=40, Z=25), and including the values on the line segment.

In addition, in the alloy material of the present invention in the above invention, X, Y, and Z are within a composition range enclosed by a line segment connecting the points of the following compositions: (X=68, Y=11, Z=21), (X=35, Y=11, Z=54), (X=21, Y=25, Z=54), (X=21, Y=39, Z=40), (X=36, Y=39, Z=25), and (X=48, Y=31, Z=21), and including the values on the line segment.

In addition, the alloy material of the present invention further contains 0.01 wt % or more and 5.0 wt % or less of indium (In) in the above invention.

In addition, the alloy material of the present invention further contains 10 wt % or less of palladium (Pd) in the above invention.

Furthermore, the alloy material of the present invention in the above invention contains at least one of the trace elements group consisting of nickel (Ni), tungsten (W), titanium (Ti), cobalt (Co), aluminum (Al), tin (Sn) and iridium (Ir), and the total content is in the range of 0.01 wt% or more and 3.0 wt% or less.

Furthermore, the contact probe of the present invention is in contact with a component, and at least the portion in contact with the component is formed of the alloy material of the present invention.

According to the present invention, the Sn reaction resistance is high and the chemical wear can be suppressed.

The following is a detailed description of the method for implementing the present invention with reference to the drawings. Furthermore, the present invention is not limited to the following implementation method. In addition, the figures referred to in the following description are only used to roughly represent the shape, size and position relationship to the extent that the content of the present invention can be understood, so the present invention is not limited to the shape, size and position relationship illustrated in each figure.

Implementation method FIG. 1 is a three-dimensional diagram showing the structure of a probe unit of one implementation method of the present invention. The probe unit 1 shown in FIG. 1 is a device used when inspecting the electrical characteristics of a semiconductor integrated circuit 100 as an inspection object, and is a device for electrically connecting the semiconductor integrated circuit 100 and a circuit substrate 200 for outputting an inspection signal to the semiconductor integrated circuit 100.

The probe unit 1 comprises: a conductive contact probe 2 (hereinafter referred to as "probe 2"), which contacts the electrodes of two different contact objects, namely, the semiconductor integrated circuit 100 and the circuit substrate 200, at both ends in the length direction; a probe holder 3, which holds and retains a plurality of probes 2 according to a preset pattern; and a seat member 4, which is arranged around the probe holder 3 and is used to suppress the positional displacement of the semiconductor integrated circuit 100 contacted by the plurality of probes 2 during inspection. In this embodiment, the electrodes of the semiconductor integrated circuit 100 are BGA (Ball Grid Array) formed using solder.

FIG2 is a cross-sectional view showing the structure of the main part of the probe unit of one embodiment of the present invention. The probe 2 is formed using a conductive material and has: a first plunger 21, which contacts the electrode of the semiconductor integrated circuit 100 when the semiconductor integrated circuit 100 is inspected; a second plunger 22, which contacts the electrode of the circuit substrate 200 having the inspection circuit; and a coil spring 23, which is arranged between the first plunger 21 and the second plunger 22 and connects the first plunger 21 and the second plunger 22 in a manner that allows them to move forward and backward freely. In FIG2, the first plunger 21, the second plunger 22 and the coil spring 23 constituting the probe 2 have the same axis. That is, the center axes of the first plunger 21, the second plunger 22, and the coil spring 23 are located on the same straight line. Furthermore, "the same axis" includes deviations caused by strain of individual components or manufacturing errors. When the probe 2 contacts the semiconductor integrated circuit 100, the coil spring 23 expands and contracts in the axial direction, which can alleviate the impact on the electrode of the semiconductor integrated circuit 100 and apply a load to the semiconductor integrated circuit 100 and the circuit substrate 200.

The first plunger 21 has a front end 21a, which is in a pointed front end shape and contacts the electrode of the semiconductor integrated circuit 100. The first plunger 21 can move in the axial direction by the expansion and contraction of the coil spring 23, and is applied with a force in the direction of the semiconductor integrated circuit 100 by the elastic force of the coil spring 23, thereby contacting the electrode of the semiconductor integrated circuit 100. In this embodiment, the front end 21a is described as a crown having a plurality of claws, but the front end 21a may also be in other shapes such as a cone or a spherical shape.

The first plunger 21 is formed using an alloy material. In the alloy material, when the weight ratio of silver (Ag) is set to X weight %, the weight ratio of copper (Cu) is set to Y weight %, and the weight ratio of platinum (Pt) is set to Z weight %, X, Y, and Z are within a composition range (region R) surrounded by a line segment connecting points of the following compositions (X=75, Y=5, Z=20), (X=20, Y=5, Z=75), (X=5, Y=20, Z=75), (X=5, Y=60, Z=35), and (X=75, Y=13, Z=12) and including the values on the line segment, and the remainder is composed of inevitable impurities. Regarding the composition range, it is preferred that X, Y, and Z are within the range (region R') enclosed by the line segments connecting the points of the following compositions (X=75, Y=13, Z=12), (X=75, Y=5, Z=20), (X=60, Y=5, Z=35), (X=27, Y=13, Z=60), (X=5, Y=35, Z=60), (X=5, Y=40, Z=55), and (X=35, Y=40, Z=25). It is further preferred that X, Y, and Z are within a range (region R") enclosed by a line segment connecting the following points: (X=68, Y=11, Z=21), (X=35, Y=11, Z=54), (X=21, Y=25, Z=54), (X=21, Y=39, Z=40), (X=36, Y=39, Z=25), and (X=48, Y=31, Z=21). For example, regions R' and R" can obtain higher Sn reaction resistance and higher processability than region R.

Furthermore, the alloy material may also contain Pd within a range of 10 wt% or less. Furthermore, the alloy material may also contain indium (In) within a range of 0.01 wt% or more and 5.0 wt% or less. In this case, the alloy material may contain both Pd and In, or may contain either one of them. Furthermore, the alloy material may also contain at least one of the trace element group consisting of nickel (Ni), tungsten (W), titanium (Ti), cobalt (Co), aluminum (Al), tin (Sn) and iridium (Ir), and the total content is within a range of 0.01 wt% or more and 3.0 wt% or less. In this embodiment, the trace element refers to an element that has a higher resistance to Sn reactivity, increases hardness or refines grains.

Here, if the alloy material contains more than 75 wt% of Ag, the resistance to Sn reactivity decreases. On the other hand, if Ag does not reach 5 wt%, the resistance value increases. Also, if the alloy material contains more than 60 wt% of Cu, there is a risk of being easily oxidized at high temperatures (here, about 175°C) and causing poor appearance. On the other hand, if Cu does not reach 5 wt%, the precipitation phase becomes less and the hardness decreases. Also, if the alloy material contains more than 75 wt% of Pt, the resistance of Pt is higher than that of Ag and Cu, so the resistance value of the alloy material increases. On the other hand, if Pt does not reach 10 wt%, the precipitation phase becomes less and the hardness decreases. Also, the alloy material becomes harder by containing In within the above range, and the strength against mechanical wear is improved.

Fig. 3 is a diagram for explaining the content ratio of copper (Cu), silver (Ag) and platinum (Pt) in one embodiment of the present invention. As the alloy material forming the first plug 21, the composition of Ag-Cu-Pt is set to be a combination within the region R shown in Fig. 3.

The second plunger 22 has a pointed front end, which contacts the electrode of the circuit board 200. The second plunger 22 can move in the axial direction by the expansion and contraction of the coil spring 23, and is applied with a force toward the circuit board 200 by the elastic force of the coil spring 23, thereby contacting the electrode of the circuit board 200.

The coil spring 23 has a tightly wound portion 23a which is mounted on the base end side of the first plunger 21 and a sparsely wound portion 23b which is mounted on the base end side of the second plunger 22 and is wound at predetermined intervals. The coil spring 23 is formed by winding a conductive wire, for example.

The end of the tightly wound portion 23a is pressed, for example, into the base end side of the first plunger 21. On the other hand, the end of the sparsely wound portion 23b is pressed into the base end side of the second plunger 22. The first plunger 21 and the second plunger 22 are joined to the coil spring 23 by the winding force of the spring and/or welding. The probe 2 is extended and contracted in the axial direction by the extension and contraction of the sparsely wound portion 23b.

The probe holder 3 is formed of insulating materials such as resin, machinable ceramics, and silicon, and is formed by laminating the first component 31 located on the upper side and the second component 32 located on the lower side in FIG. The first component 31 and the second component 32 are respectively formed with the same number of seat holes 33 and seat holes 34 for accommodating a plurality of probes 2, and the seat holes 33 and seat holes 34 for accommodating the probes 2 are formed in a manner that their axes are consistent with each other. The formation positions of the seat holes 33 and the seat holes 34 are determined according to the wiring pattern of the semiconductor integrated circuit 100.

The seat hole 33 and the seat hole 34 are both stepped holes with different diameters along the through direction. That is, the seat hole 33 includes a small diameter portion 33a and a large diameter portion 33b, the small diameter portion 33a has an opening on the upper end surface of the probe seat 3, and the diameter of the large diameter portion 33b is larger than the small diameter portion 33a. On the other hand, the seat hole 34 includes a small diameter portion 34a and a large diameter portion 34b, the small diameter portion 34a has an opening on the lower end surface of the probe seat 3, and the diameter of the large diameter portion 34b is larger than the small diameter portion 34a. The shapes of the seat holes 33 and the seat holes 34 are determined according to the structure of the probe 2 accommodated.

FIG4 is a diagram showing the state of inspecting the semiconductor integrated circuit 100 using the probe holder 3. When inspecting the semiconductor integrated circuit 100, the coil spring 23 is compressed in the length direction by the contact load from the semiconductor integrated circuit 100 and the circuit substrate 200. During the inspection, the inspection signal supplied from the circuit substrate 200 to the semiconductor integrated circuit 100 passes from the electrode 201 of the circuit substrate 200 through the second plunger 22 of the probe 2, the tightly wound portion 23a, and the first plunger 21 to reach the connection electrode 101 of the semiconductor integrated circuit 100.

Here, the wear of the front end of the first plunger 21 repeatedly contacting the BGA is described with reference to Figures 5 and 6. Figure 5 is a diagram for explaining the shape of the front end portion 300 of the contact probe before use and after repeated use. Figure 6 is a diagram for explaining the reaction between Pd and Sn.

If the plunger containing relatively more Pd is repeatedly in contact with the BGA during inspection at a high temperature of about 175°C, the tip will be worn and the shape will change. For example, the tip 300 shown in FIG5(a) is worn due to repeated use, and deformation occurs along with the wear (see FIG5(b)).

When the plunger contacts the BGA and causes the front end to wear, the chemical wear caused by the reaction between the tin (Sn) in the solder and the Pd in the plunger is more important than the mechanical wear. As shown in Figure 6, the chemical reaction at this time is the reaction between the Sn in the solder _LS and the Pd in the plunger _LP . Because the Sn-Pd layer _LR is formed between the solder and the plunger, the diffuse wear of the plunger occurs. This diffuse wear will cause the front end of the plunger to deform.

In this regard, in the present embodiment, a first plunger 21 made of the following alloy material is used in contact with an electrode made of solder. The alloy material is, when the weight ratio of silver (Ag) is set to X weight %, the weight ratio of copper (Cu) is set to Y weight %, and the weight ratio of platinum (Pt) is set to Z weight %, X, Y, and Z are in a composition range surrounded by a line segment connecting the points of the following compositions (X=75, Y=5, Z=20), (X=20, Y=5, Z=75), (X=5, Y=20, Z=75), (X=5, Y=60, Z=35), and (X=75, Y=13, Z=12) and including the values on the line segment, and the remainder is composed of inevitable impurities. By using this alloy material, it is possible to suppress the reaction with Sn in the solder. According to this embodiment, the Sn reactivity resistance is higher and chemical wear can be suppressed. Example

The following describes the embodiments of the present invention. However, the present invention is not limited to the embodiments.

Sn reactivity test First, the Sn reactivity test is performed to confirm the size of the Sn reaction layer formed by the reaction with Sn. In the Sn reactivity test, pure metal is brought into contact with sheet solder at 175°C, a specified load is applied and maintained, and whether a Sn reaction layer is formed or the thickness of the layer is measured. Here, the pure metals used in this test are platinum (Pt), silver (Ag), copper (Cu), and palladium (Pd).

FIG. 7 is a graph showing the results of the Sn reactivity test of platinum (Pt). FIG. 8 is a graph showing the results of the Sn reactivity test of silver (Ag). FIG. 9 is a graph showing the results of the Sn reactivity test of copper (Cu). FIG. 10 is a graph showing the results of the Sn reactivity test of palladium (Pd). The results of the Sn reactivity test showed that when Pt was used, a mixed layer (Sn reaction layer) was not generated between the Pt layer _MPt and the solder layer _MS . On the other hand, when Ag, Cu and Pd are used, mixed layers (Sn reaction layers) M _MIX are formed between the Ag layer M _Ag , Cu layer M _Cu , Pd layer M _Pd and solder layer _MS, respectively. When Ag is used, the thickness R _Ag is 4 μm, when Cu is used, the thickness R _Cu is 2 μm, and when Pd is used, the thickness R _Pd is 54 μm. Based on the test results of Figures 7 to 10, the following results were obtained: Pt has the highest resistance to Sn reactivity against Sn, followed by Cu and Ag in descending order of Sn reactivity resistance.

Examples 1 to 21, Comparative Examples 1 and 2 Test pieces made of alloys of the compositions shown in Table 1 were prepared. The test pieces were rod-shaped components with a pointed tip. The test pieces of Examples 1 to 21 were those with high Sn reactivity resistance and conductivity, with Ag and Cu as the main elements, or with Pt as the main element. In addition, each test piece was subjected to Vickers hardness measurement, wear resistance test, and resistance test. The Vickers hardness was measured by setting the load to 300 gf and the holding time to 15 seconds.

Wear resistance (tin resistance) test The above Sn reaction resistance test was performed on each embodiment. When the Sn reaction layer (diffusion layer) was thinner than the Sn reaction layer of the Pd alloy in Comparative Example 2, the tin resistance was set to good (○), and when the thickness of the Sn reaction layer (diffusion layer) was greater than the thickness of the Sn reaction layer of the Pd alloy, the tin resistance was set to poor (×).

Processability evaluation The test piece was processed into a four-prism shape using a roller calender. When the length of one side of the four-prism section after rolling can be processed to less than 6.1 mm, the processability is set to be particularly good (◎), when the length of one side of the four-prism section after rolling can be processed to more than 6.1 mm and less than 6.6 mm, the processability is set to be good (○), and when the length of one side of the four-prism section after rolling can be processed to more than 6.6 mm, the processability is set to be slightly good (△).

Table 1 shows the compositions and test results of Examples 1 to 24 and Comparative Examples 1 and 2. (Table 1) Ag Cu Pt Pd In Tin resistance Processability Vickers hardness Embodiment 1 40 30 30 - - ○ ◎ 103 Embodiment 2 50 20 30 - - ○ ◎ 106 Embodiment 3 30 20 50 - - ○ ◎ 231 Embodiment 4 40 20 40 - - ○ ◎ 177 Embodiment 5 30 35 35 - - ○ ◎ 162 Embodiment 6 60 15 25 - - ○ ◎ 105 Embodiment 7 40 15 45 - - ○ ○ 207 Embodiment 8 30 40 30 - - ○ ○ 148 Embodiment 9 60 10 30 - - ○ ○ 140 Embodiment 10 57 25 18 - - ○ ◎ 129 Embodiment 11 70 15 15 - - ○ ◎ 106 Embodiment 12 50 10 40 - - ○ ○ 169 Embodiment 13 10 35 55 - - ○ ○ 192 Embodiment 14 20 30 50 - - ○ ○ 188 Embodiment 15 20 25 55 - - ○ ○ 229 Embodiment 16 10 20 70 - - ○ △ 344 Embodiment 17 20 15 65 - - ○ △ 271 Embodiment 18 40 5 55 - - ○ △ 190 Embodiment 19 10 55 35 - - ○ ○ 158 Embodiment 20 20 50 30 - - ○ △ 161 Embodiment 21 50 20 20 10 - ○ ◎ 246 Embodiment 22 50 20 27 - 3 ○ ◎ 158 Embodiment 23 30 20 49 - 1 ○ ◎ 286 Embodiment 24 50 20 twenty two 5 3 ○ ◎ 172 Comparison Example 1 80 5 15 - - × ◎ 105 Comparison Example 2 30 30 - 40 - × ◎ 450

FIG. 11 is a diagram showing the results of the wear resistance test of the contact probe of Example 1. FIG. 12 is a diagram showing the results of the wear resistance test of the contact probe of Example 2. FIG. 13 is a diagram showing the results of the wear resistance test of the contact probe of Example 21. FIG. 14 is a diagram showing the results of the wear resistance test of the contact probe of Comparative Example 2. FIG. 11 to FIG. 14 show an image of the upper surface obtained by photographing the front end of the test piece (a) and an image obtained by photographing the side surface of the test piece (b). In the wear resistance test, the contraction width of the front end surface of the test piece is measured as the wear width, and the smaller the wear width is, the smaller the wear can be evaluated.

Compared with Comparative Example 2, Examples 1, 2, and 21 have lower Vickers hardness. On the other hand, as shown in FIGS. 11 to 14 , the wear widths H ₁ to H ₃ of Examples 1, 2, and 21 are smaller than the wear width H ₄ of Comparative Example 2. Therefore, it can be considered that the compositions of Examples 1, 2, and 21 have better wear resistance (tin resistance) than the composition of Comparative Example 2. As for the reason why Examples 1, 2, and 21 have better wear resistance than Comparative Example 2, the amount of added Pd is smaller. It is further considered that the ratio of Ag in the composition of Comparative Example 1 is higher, resulting in a decrease in wear resistance (tin resistance). Based on these results, it can be considered that Examples 1 to 21 have wear resistance (tin resistance) compared with the compositions of Comparative Examples 1 and 2. In addition, it can be considered that Examples 22 and 24 to which In is added have higher hardness than the composition of Example 2 in which the ratio of Ag to Cu is the same, and have higher hardness while maintaining wear resistance (tin resistance) and processability. In addition, it can be considered that in Example 23 to which In is added, the hardness is also higher than the composition of Example 3 in which the ratio of Ag to Cu is the same, and have higher hardness while maintaining wear resistance (tin resistance) and processability.

The above is a description of the method for implementing the present invention, but the present invention should not be limited to the above-mentioned embodiment. In the embodiment, the contact probe is used as an example for description, but for example, as long as it is a component for electrical or electronic equipment that contacts a part containing Sn, the alloy material of the present invention can be applied. In this case, the component only needs to be formed of the alloy material of the present invention at least in the part that contacts the part.

Furthermore, the structure of the probe 2 described in the embodiment is only an example, and the above alloy material can be applied to various known probes. For example, it is not limited to the probe composed of the plunger and the coil spring as described above, but can also be a probe with a tube member, a spring needle, or a linear probe that obtains a load by bending a metal wire into a bow shape, or a connection terminal (connector) that connects electrical contacts to each other.

Thus, the present invention may include various implementation methods not described herein, and various design changes may be implemented within the scope of the technical concept specified by the patent application scope.

As described above, the alloy material and contact probe of the present invention have high resistance to Sn reaction and are suitable for inhibiting chemical wear.

1: Probe unit 2: Contact probe (probe) 3: Probe seat 4: Seat member 21: First plunger 21a: Front end 22: Second plunger 23: Coil spring 23a: Closely wound portion 23b: Sparsely wound portion 31: First member 32: Second member 33, 34: Seat hole 33a: Small diameter portion 33b: Large diameter portion 34a: Small diameter portion 34b: Large diameter portion 100: Semiconductor integrated circuit 101: Connection electrode 200: Circuit board 201: Electrode 300: Front end _H1 : Wear width _H2 : Wear width _H3 : Wear width _H4 : Wear width _LR : Sn-Pd layer _LS : Solder _LP : Plug M _Ag : Ag layer M _Cu : Cu layer M _MIX : Mixed layer (Sn reaction layer) M _S : Solder layer M _Pd : Pd layer M _Pt : Pt layer R : Region R': Region R": Region R _Ag : Thickness R _Cu : Thickness R _Pd : Thickness

FIG. 1 is a perspective view showing the structure of a probe unit in one embodiment of the present invention. FIG. 2 is a cross-sectional view showing the structure of the main part of the probe unit in one embodiment of the present invention. FIG. 3 is a view for explaining the content ratio of copper (Cu), silver (Ag) and platinum (Pt) in one embodiment of the present invention. FIG. 4 is a partial cross-sectional view showing the structure of the main part of the probe unit when inspecting a semiconductor integrated circuit. FIG. 5 is a view for explaining the shape of the front end of the contact probe before use and after repeated use. FIG. 6 is a view for explaining the reaction between Pd and Sn. FIG. 7 is a view showing the results of the Sn reactivity test of platinum (Pt). FIG8 is a graph showing the results of the Sn reactivity test of silver (Ag). FIG9 is a graph showing the results of the Sn reactivity test of copper (Cu). FIG10 is a graph showing the results of the Sn reactivity test of palladium (Pd). FIG11 is a graph showing the results of the wear resistance test of the contact probe of Example 1. FIG12 is a graph showing the results of the wear resistance test of the contact probe of Example 2. FIG13 is a graph showing the results of the wear resistance test of the contact probe of Example 21. FIG14 is a graph showing the results of the wear resistance test of the contact probe of Comparative Example 2.

Claims (7)

An alloy material characterized in that, when the weight ratio of silver (Ag) is set to X weight %, the weight ratio of copper (Cu) is set to Y weight %, and the weight ratio of platinum (Pt) is set to Z weight %, X, Y, and Z are within a composition range enclosed by a line segment connecting the points of the following compositions (X=75, Y=5, Z=20), (X=20, Y=5, Z=75), (X=5, Y=20, Z=75), (X=5, Y=60, Z=35), and (X=75, Y=13, Z=12) and including the values on the line segment, and the remainder is composed of inevitable impurities. For example, the alloy material of claim 1, wherein, X, Y, and Z are within the range of values enclosed by the line segment connecting the points of the following compositions (X=75, Y=13, Z=12), (X=75, Y=5, Z=20), (X=60, Y=5, Z=35), (X=27, Y=13, Z=60), (X=5, Y=35, Z=60), (X=5, Y=40, Z=55), and (X=35, Y=40, Z=25) and including the values on the line segment. For example, the alloy material of claim 2, wherein, X, Y, and Z are within the composition range enclosed by the line segment connecting the points of the following compositions (X=68, Y=11, Z=21), (X=35, Y=11, Z=54), (X=21, Y=25, Z=54), (X=21, Y=39, Z=40), (X=36, Y=39, Z=25), and (X=48, Y=31, Z=21) and including the values on the line segment. The alloy material of claim 1, wherein, further comprises indium (In) in an amount of not less than 0.01 wt% and not more than 5.0 wt%. The alloy material of claim 1, wherein, further comprises less than 10% by weight of palladium (Pd). The alloy material of claim 1, wherein, it contains at least one of the trace elements group consisting of nickel (Ni), tungsten (W), titanium (Ti), cobalt (Co), aluminum (Al), tin (Sn) and iridium (Ir), and the total content is within the range of 0.01 wt% or more and 3.0 wt% or less. A contact probe, characterized in that it is in contact with a part, and at least the part in contact with the aforementioned part is formed of an alloy material such as any one of claims 1 to 6.