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TW202444806A - Thermoplastic liquid crystal polymer film, laminate, and production method thereof - Google Patents

Thermoplastic liquid crystal polymer film, laminate, and production method thereof Download PDF

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Publication number
TW202444806A
TW202444806A TW113111992A TW113111992A TW202444806A TW 202444806 A TW202444806 A TW 202444806A TW 113111992 A TW113111992 A TW 113111992A TW 113111992 A TW113111992 A TW 113111992A TW 202444806 A TW202444806 A TW 202444806A
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liquid crystal
crystal polymer
thermoplastic liquid
polymer film
film
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TW113111992A
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Chinese (zh)
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中島崇裕
毛戶章博
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日商可樂麗股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/22Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of indefinite length
    • B29C43/28Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of indefinite length incorporating preformed parts or layers, e.g. compression moulding around inserts or for coating articles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/32Component parts, details or accessories; Auxiliary operations
    • B29C43/44Compression means for making articles of indefinite length
    • B29C43/46Rollers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Laminated Bodies (AREA)
  • Polarising Elements (AREA)

Abstract

A liquid crystal polymer film including a polymer capable of forming optically anisotropic melt phase, wherein at least one surface of the film has a skewness Ssk of -5 or more and 0 or less and an arithmetic mean roughness of 0.15 μm or more.

Description

熱塑性液晶聚合物薄膜、積層體、以及彼等之製造方法Thermoplastic liquid crystal polymer film, laminate, and method for manufacturing the same

本案主張2023年3月29日申請之日本特願2023-053939號之優先權,並且藉由參照其全體而引用作為構成本申請案之一部分者。This application claims priority to Japanese Patent Application No. 2023-053939, filed on March 29, 2023, and is incorporated herein by reference in its entirety as a part of this application.

本發明係關於包含可形成光學上各向異性的熔融相之聚合物(以下稱為熱塑性液晶聚合物)之熱塑性液晶聚合物薄膜、及包含熱塑性液晶聚合物薄膜之積層體、以及該熱塑性液晶聚合物薄膜與積層體之製造方法。The present invention relates to a thermoplastic liquid crystal polymer film containing a polymer capable of forming an optically anisotropic melt phase (hereinafter referred to as a thermoplastic liquid crystal polymer), a laminate containing the thermoplastic liquid crystal polymer film, and a method for manufacturing the thermoplastic liquid crystal polymer film and the laminate.

近年來,就電子材料之領域而言,由樹脂層與金屬層之積層體構成之可撓性電路基板之利用有所進展。熱塑性液晶聚合物薄膜係作為高耐熱性、低吸溼性、高頻特性等優異的材料而為人所知,近年來係作為高速傳輸用的可撓性電路基板材料而受到注目。In recent years, in the field of electronic materials, the use of flexible circuit substrates composed of a laminate of resin layers and metal layers has made progress. Thermoplastic liquid crystal polymer films are known as materials with excellent properties such as high heat resistance, low moisture absorption, and high frequency characteristics. In recent years, they have attracted attention as flexible circuit substrate materials for high-speed transmission.

基於小型、高密度化之要求,可撓性電路基板之電路成形,正朝向電路之精細圖案化進展,正在探討半加成法(SAP法)作為可進行細微電路加工的技術。例如,專利文獻1(WO2020/105289)記載了:在利用SAP法對形成於為基材的樹脂薄膜之表面之無電解銅鍍敷層進行蝕刻之步驟中,為了抑制在鍍敷層造成之嵌入(差し込み)之發生,而將表面處理銅箔與樹脂薄膜進行熱壓接以將表面處理銅箔之表面形狀轉印至樹脂薄膜之表面,並利用蝕刻而去除了表面處理銅箔之情形下,將殘留之樹脂薄膜之表面根據ISO25178所測定之偏斜度Ssk設為-0.6以下之技術。 [先前技術文獻] [專利文獻] Based on the requirements of miniaturization and high density, the circuit formation of flexible circuit substrates is progressing towards fine circuit patterning, and the semi-additive process (SAP process) is being explored as a technology that can perform fine circuit processing. For example, Patent Document 1 (WO2020/105289) describes: In the step of etching an electroless copper coating formed on the surface of a resin film as a substrate by the SAP method, in order to suppress the occurrence of embedding (difference) caused by the coating, a surface-treated copper foil and a resin film are heat-pressed to transfer the surface shape of the surface-treated copper foil to the surface of the resin film, and when the surface-treated copper foil is removed by etching, the skewness Ssk of the surface of the remaining resin film is set to less than -0.6 as measured in accordance with ISO25178. [Prior Technical Document] [Patent Document]

[專利文獻1] 國際公開第2020/105289號[Patent Document 1] International Publication No. 2020/105289

[發明所欲解決之課題][The problem that the invention wants to solve]

可撓性電路基板,會對於樹脂層與金屬層(導體層)要求良好的密合性。惟另一方面,為了使熱塑性液晶聚合物薄膜之高頻特性得以發揮,又以在樹脂層與金屬層之界面存在平滑的界面為較佳。Flexible circuit boards require good adhesion between the resin layer and the metal layer (conductor layer). On the other hand, in order to bring out the high-frequency characteristics of the thermoplastic liquid crystal polymer film, it is better to have a smooth interface between the resin layer and the metal layer.

專利文獻1之技術中,雖將樹脂薄膜熱壓接於表面處理銅箔之處理表面以將處理表面之表面形狀轉印至樹脂薄膜之表面,並利用蝕刻而去除表面處理銅箔,藉此將樹脂薄膜之表面之偏斜度Ssk設為-0.6以下,但該方法難以在樹脂薄膜之表面設置平坦面。又,專利文獻1中,雖使用由熱硬化性樹脂構成之薄膜,但就吸溼性低的熱塑性液晶聚合物薄膜而言,難以完全地蝕刻取出深入薄膜表面之谷部之銅。又,當銅部分地殘留於熱塑性液晶聚合物薄膜表面時,由於此等會成為結晶成長之核,因此難以在後步驟之鍍敷處理中形成均勻的金屬層。In the technology of Patent Document 1, although a resin film is hot-pressed onto the treated surface of a surface-treated copper foil to transfer the surface shape of the treated surface to the surface of the resin film, and the surface-treated copper foil is removed by etching to set the surface skewness Ssk of the resin film to less than -0.6, it is difficult to provide a flat surface on the surface of the resin film by this method. In addition, in Patent Document 1, although a film made of a thermosetting resin is used, it is difficult to completely etch out copper that has penetrated deep into the valleys of the film surface for a thermoplastic liquid crystal polymer film with low hygroscopicity. Furthermore, when copper partially remains on the surface of the TLCP film, it becomes difficult to form a uniform metal layer in the subsequent plating process because it becomes a nucleus for crystal growth.

本發明之目的係提供一種在作成與金屬層之積層體之情形下可將傳輸損耗抑制為低的同時與金屬層之密合性亦良好的熱塑性液晶聚合物薄膜、包含這樣的熱塑性液晶聚合物薄膜之積層體、及彼等之製造方法。 [用來解決課題之手段] The purpose of the present invention is to provide a thermoplastic liquid crystal polymer film that can suppress transmission loss to a low level when forming a laminate with a metal layer and has good adhesion with the metal layer, a laminate containing such a thermoplastic liquid crystal polymer film, and a method for manufacturing the same. [Means for solving the problem]

本發明之發明人等為了達成上述目的而潛心探討,結果理解到在藉由調整將熱塑性液晶聚合物薄膜之表面用輥處理時的條件,來對於薄膜賦予偏斜度成為規定範圍的表面粗糙度之情形下,可兼顧對於導體層之密合性、與高頻特性之維持之二種課題,從而完成本發明。The inventors of the present invention have made intensive studies to achieve the above-mentioned purpose, and have realized that by adjusting the conditions for roller-treating the surface of a thermoplastic liquid crystal polymer film, the film can be given a surface roughness with a deflection within a specified range, thereby achieving both adhesion to the conductive layer and maintenance of high-frequency characteristics, thereby completing the present invention.

亦即,本發明可由以下的態樣構成。 [態樣1] 一種熱塑性液晶聚合物薄膜,其係包含可形成光學上各向異性的熔融相之聚合物(以下稱為熱塑性液晶聚合物)之熱塑性液晶聚合物薄膜,其在至少一表面中,偏斜度(偏度)Ssk為-5以上0以下(較佳為小於0,更佳為-0.2以下),且該表面之算術平均粗糙度Sa為0.15μm以上。 [態樣2] 如態樣1所記載之熱塑性液晶聚合物薄膜,其中前述表面為無金屬。 That is, the present invention can be constituted by the following aspects. [Aspect 1] A thermoplastic liquid crystal polymer film, which is a thermoplastic liquid crystal polymer film comprising a polymer that can form an optically anisotropic melt phase (hereinafter referred to as a thermoplastic liquid crystal polymer), wherein in at least one surface, the skewness (skewness) Ssk is greater than -5 and less than 0 (preferably less than 0, more preferably less than -0.2), and the arithmetic mean roughness Sa of the surface is greater than 0.15μm. [Aspect 2] The thermoplastic liquid crystal polymer film as described in aspect 1, wherein the aforementioned surface is metal-free.

[態樣3] 如態樣1或2所記載之熱塑性液晶聚合物薄膜,其中前述表面之算術平均粗糙度Sa為0.50μm以下(較佳為0.15μm以上0.50μm以下,例如0.15μm以上0.30μm以下、或0.20μm以上0.50μm以下)。 [態樣4] 如態樣1至3中任一態樣所記載之熱塑性液晶聚合物薄膜,其中前述表面之最大峰高Sp為0.15μm以上(較佳為0.5μm以上)3.00μm以下。 [Aspect 3] A thermoplastic liquid crystal polymer film as described in Aspect 1 or 2, wherein the arithmetic mean roughness Sa of the aforementioned surface is 0.50 μm or less (preferably 0.15 μm or more and 0.50 μm or less, for example 0.15 μm or more and 0.30 μm or more and 0.20 μm or less). [Aspect 4] A thermoplastic liquid crystal polymer film as described in any of Aspects 1 to 3, wherein the maximum peak height Sp of the aforementioned surface is 0.15 μm or more (preferably 0.5 μm or more) and 3.00 μm or less.

[態樣5] 如態樣1至4中任一態樣所記載之熱塑性液晶聚合物薄膜,其中前述表面之最大谷深Sv為0.2μm以上3.5μm以下(較佳為1.0μm以上3.0μm以下)。 [態樣6] 如態樣1至5中任一態樣所記載之熱塑性液晶聚合物薄膜,其中前述表面之最大高度Sz為1.5μm以上5.0μm以下。 [態樣7] 如態樣1至6中任一態樣所記載之熱塑性液晶聚合物薄膜,其中熔點為315℃以上。 [Aspect 5] A thermoplastic liquid crystal polymer film as described in any of aspects 1 to 4, wherein the maximum valley depth Sv of the aforementioned surface is greater than 0.2μm and less than 3.5μm (preferably greater than 1.0μm and less than 3.0μm). [Aspect 6] A thermoplastic liquid crystal polymer film as described in any of aspects 1 to 5, wherein the maximum height Sz of the aforementioned surface is greater than 1.5μm and less than 5.0μm. [Aspect 7] A thermoplastic liquid crystal polymer film as described in any of aspects 1 to 6, wherein the melting point is greater than 315°C.

[態樣8] 一種積層體,其包含如態樣1至7中任一態樣所記載之熱塑性液晶聚合物薄膜、與積層於前述熱塑性液晶聚合物薄膜上之導電層。 [態樣9] 如態樣8所記載之積層體,其中於前述熱塑性液晶聚合物薄膜之前述表面上,形成了以選自由導電性印墨、金屬皮膜、及由此等所形成之電路組成之群組的至少一種所構成之層作為導電層。 [態樣10] 如態樣8或9所記載之積層體,其中於與前述熱塑性液晶聚合物薄膜之前述表面相反側的表面上,形成了金屬箔層作為導電層。 [Aspect 8] A laminate comprising a thermoplastic liquid crystal polymer film as described in any one of aspects 1 to 7, and a conductive layer laminated on the thermoplastic liquid crystal polymer film. [Aspect 9] A laminate as described in aspect 8, wherein a layer composed of at least one selected from the group consisting of a conductive ink, a metal film, and a circuit formed thereby is formed on the aforementioned surface of the thermoplastic liquid crystal polymer film as a conductive layer. [Aspect 10] A laminate as described in aspect 8 or 9, wherein a metal foil layer is formed as a conductive layer on the surface opposite to the aforementioned surface of the thermoplastic liquid crystal polymer film.

[態樣11] 如態樣8至10中任一態樣所記載之積層體,其為電路基板。 [態樣12] 一種如態樣1至7中任一態樣所記載之熱塑性液晶聚合物薄膜之製造方法,其至少具備:使粗化表面輥接觸熱塑性液晶聚合物薄膜之至少一表面之步驟。 [Aspect 11] The laminate described in any of aspects 8 to 10 is a circuit substrate. [Aspect 12] A method for manufacturing a thermoplastic liquid crystal polymer film described in any of aspects 1 to 7, which comprises at least: a step of bringing a roughened surface roller into contact with at least one surface of the thermoplastic liquid crystal polymer film.

[態樣13] 一種如態樣8至11中任一態樣所記載之積層體之製造方法,其至少具備:使粗化表面輥接觸熱塑性液晶聚合物薄膜與支撐體之積層體之熱塑性液晶聚合物薄膜表面之步驟。 [態樣14] 如態樣13所記載之積層體之製造方法,其中支撐體為金屬箔。 [Aspect 13] A method for manufacturing a laminate as described in any of aspects 8 to 11, which comprises at least: a step of bringing a roughened surface roller into contact with a surface of a thermoplastic liquid crystal polymer film of a laminate of a thermoplastic liquid crystal polymer film and a support. [Aspect 14] A method for manufacturing a laminate as described in aspect 13, wherein the support is a metal foil.

此外,申請專利範圍及/或說明書所揭示之至少2個構成要素之任何組合亦包含於本發明中。尤其申請專利範圍所記載之請求項2項以上的任何組合亦包含於本發明中。 [發明之效果] In addition, any combination of at least two constituent elements disclosed in the patent application scope and/or the specification is also included in the present invention. In particular, any combination of two or more claim items recorded in the patent application scope is also included in the present invention. [Effect of the invention]

根據本發明之熱塑性液晶聚合物薄膜,可得到一種在與導體層積層之情形下可將傳輸損耗抑制為低的同時與導體層之密合性亦良好的熱塑性液晶聚合物薄膜,且包含這樣的熱塑性液晶聚合物薄膜之積層體的電路加工性優異。According to the thermoplastic liquid crystal polymer film of the present invention, a thermoplastic liquid crystal polymer film can be obtained which can suppress transmission loss to a low level when laminated with a conductor layer and has good adhesion with the conductor layer, and a laminate including such a thermoplastic liquid crystal polymer film has excellent circuit processability.

(熱塑性液晶聚合物薄膜) 熱塑性液晶聚合物薄膜包含熱塑性液晶聚合物。熱塑性液晶聚合物係以可熔融成形的液晶性聚合物(或可形成光學上各向異性的熔融相之聚合物)構成,只要是可熔融成形的液晶性聚合物,則未針對其化學構成進行特別限定,但例如可列舉:熱塑性液晶聚酯、或於其中導入醯胺鍵而成之熱塑性液晶聚酯醯胺等。 (Thermoplastic liquid crystal polymer film) Thermoplastic liquid crystal polymer film includes thermoplastic liquid crystal polymer. Thermoplastic liquid crystal polymer is composed of a melt-formable liquid crystal polymer (or a polymer that can form an optically anisotropic melt phase). As long as it is a melt-formable liquid crystal polymer, its chemical composition is not particularly limited, but examples thereof include: thermoplastic liquid crystal polyester, or thermoplastic liquid crystal polyesteramide formed by introducing amide bonds therein, etc.

又,熱塑性液晶聚合物亦可為於芳香族聚酯或芳香族聚酯醯胺中進一步導入醯亞胺鍵、碳酸酯鍵、碳二亞胺鍵、三聚異氰酸酯鍵等源自異氰酸酯的鍵等而成之聚合物。Furthermore, the thermoplastic liquid crystal polymer may also be a polymer obtained by further introducing an imide bond, a carbonate bond, a carbodiimide bond, a triisocyanate bond or the like, which is derived from isocyanate, into an aromatic polyester or an aromatic polyester amide.

作為使用於本發明之熱塑性液晶聚合物之具體例,可列舉:由分類為以下所例示之(1)至(4)之化合物及其衍生物所導出之周知的熱塑性液晶聚酯及熱塑性液晶聚酯醯胺。但是,為了形成可形成光學上各向異性的熔融相之聚合物,各種原料化合物之組合具有適當的範圍自不待言。As specific examples of the thermoplastic liquid crystal polymer used in the present invention, there can be cited: well-known thermoplastic liquid crystal polyesters and thermoplastic liquid crystal polyesteramides derived from the compounds classified into (1) to (4) and their derivatives as exemplified below. However, it goes without saying that the combination of various raw material compounds has an appropriate range in order to form a polymer that can form an optically anisotropic melt phase.

(1)芳香族或脂肪族二醇(代表例係參照表1) [表1] (1) Aromatic or aliphatic diols (see Table 1 for representative examples) [Table 1]

(2)芳香族或脂肪族二羧酸(代表例係參照表2) [表2] (2) Aromatic or aliphatic dicarboxylic acids (see Table 2 for representative examples) [Table 2]

(3)芳香族羥基羧酸(代表例係參照表3) [表3] (3) Aromatic hydroxycarboxylic acid (see Table 3 for representative examples) [Table 3]

(4)芳香族二胺、芳香族羥基胺或芳香族胺基羧酸(代表例係參照表4) [表4] (4) Aromatic diamine, aromatic hydroxylamine or aromatic aminocarboxylic acid (see Table 4 for representative examples) [Table 4]

作為由此等原料化合物所得之熱塑性液晶聚合物之代表例,可列舉:具有表5及6所示之重複單元之共聚物。As representative examples of thermoplastic liquid crystal polymers obtained from these raw material compounds, copolymers having the repeating units shown in Tables 5 and 6 can be cited.

[表5] [表6] [Table 5] [Table 6]

此等共聚物之中,至少包含對羥基苯甲酸及/或6-羥基-2-萘甲酸作為重複單元之共聚物為較佳,尤其(i)包含對羥基苯甲酸與6-羥基-2-萘甲酸之重複單元之共聚物、或(ii)包含選自由對羥基苯甲酸及6-羥基-2-萘甲酸組成之群組的至少一種芳香族羥基羧酸、至少一種芳香族二醇及/或芳香族羥基胺、與至少一種芳香族二羧酸之重複單元之共聚物為較佳。Among these copolymers, copolymers containing at least p-hydroxybenzoic acid and/or 6-hydroxy-2-naphthoic acid as repeating units are preferred, and in particular (i) copolymers containing repeating units of p-hydroxybenzoic acid and 6-hydroxy-2-naphthoic acid, or (ii) copolymers containing repeating units of at least one aromatic hydroxycarboxylic acid selected from the group consisting of p-hydroxybenzoic acid and 6-hydroxy-2-naphthoic acid, at least one aromatic diol and/or aromatic hydroxyamine, and at least one aromatic dicarboxylic acid are preferred.

例如就(i)之共聚物而言,當熱塑性液晶聚合物至少包含對羥基苯甲酸與6-羥基-2-萘甲酸之重複單元時,重複單元(A)之對羥基苯甲酸與重複單元(B)之6-羥基-2-萘甲酸之莫耳比(A)/(B),以於熱塑性液晶聚合物中(A)/(B)=10/90~90/10左右為理想,更佳亦可為(A)/(B)=15/85~85/15左右,進一步較佳亦可為(A)/(B)=20/80~80/20左右。For example, in the case of the copolymer of (i), when the thermoplastic liquid crystal polymer contains at least repeating units of p-hydroxybenzoic acid and 6-hydroxy-2-naphthoic acid, the molar ratio (A)/(B) of the repeating units of p-hydroxybenzoic acid (A) to the repeating units of 6-hydroxy-2-naphthoic acid (B) in the thermoplastic liquid crystal polymer is preferably (A)/(B)=10/90 to 90/10, more preferably (A)/(B)=15/85 to 85/15, and even more preferably (A)/(B)=20/80 to 80/20.

此外,當(i)之共聚物之情形,從調整分子量等的觀點來看,除了包含對羥基苯甲酸及6-羥基-2-萘甲酸之重複單元以外,亦可包含由芳香族二醇、芳香族二羧酸(例如對苯二甲酸)構成之重複單元。In the case of the copolymer of (i), from the viewpoint of adjusting the molecular weight, in addition to the repeating units of p-hydroxybenzoic acid and 6-hydroxy-2-naphthoic acid, repeating units composed of an aromatic diol or an aromatic dicarboxylic acid (e.g., terephthalic acid) may be contained.

又,當(ii)之共聚物之情形,選自由對羥基苯甲酸及6-羥基-2-萘甲酸組成之群組的至少一種芳香族羥基羧酸(C)、選自由4,4’-二羥基聯苯、氫醌、苯基氫醌、及4,4’-二羥基二苯醚組成之群組的至少一種芳香族二醇(D)、與選自由對苯二甲酸、間苯二甲酸及2,6-萘二甲酸組成之群組的至少一種芳香族二羧酸(E)之熱塑性液晶聚合物中的各重複單元之莫耳比,可為前述芳香族羥基羧酸(C):前述芳香族二醇(D):前述芳香族二羧酸(E)=(30~80):(35~10):(35~10)左右,更佳亦可為(C):(D):(E)=(35~75):(32.5~12.5):(32.5~12.5)左右,進一步較佳亦可為(C):(D):(E)=(40~70):(30~15):(30~15)左右。In the case of the copolymer of (ii), the thermoplastic liquid crystal polymer of at least one aromatic hydroxycarboxylic acid (C) selected from the group consisting of p-hydroxybenzoic acid and 6-hydroxy-2-naphthoic acid, at least one aromatic diol (D) selected from the group consisting of 4,4'-dihydroxybiphenyl, hydroquinone, phenylhydroquinone, and 4,4'-dihydroxydiphenyl ether, and at least one aromatic dicarboxylic acid (E) selected from the group consisting of terephthalic acid, isophthalic acid, and 2,6-naphthalene dicarboxylic acid is preferably a copolymer of at least one aromatic dicarboxylic acid (E) selected from the group consisting of terephthalic acid, isophthalic acid, and 2,6-naphthalene dicarboxylic acid. The molar ratio of the aromatic hydroxycarboxylic acid (C): the aromatic diol (D): the aromatic dicarboxylic acid (E) can be about (30-80): (35-10): (35-10), more preferably (C): (D): (E) = (35-75): (32.5-12.5): (32.5-12.5), and further preferably (C): (D): (E) = (40-70): (30-15): (30-15).

又,芳香族羥基羧酸(C)之中源自6-羥基-2-萘甲酸的重複單元之莫耳比率例如可為85莫耳%以上,較佳亦可為90莫耳%以上,更佳亦可為95莫耳%以上。芳香族二羧酸(E)之中源自2,6-萘二甲酸的重複單元之莫耳比率例如可為85莫耳%以上,較佳亦可為90莫耳%以上,更佳亦可為95莫耳%以上。In addition, the molar ratio of the repeating unit derived from 6-hydroxy-2-naphthoic acid in the aromatic hydroxycarboxylic acid (C) may be, for example, 85 mol% or more, preferably 90 mol% or more, and more preferably 95 mol% or more. The molar ratio of the repeating unit derived from 2,6-naphthalenedicarboxylic acid in the aromatic dicarboxylic acid (E) may be, for example, 85 mol% or more, preferably 90 mol% or more, and more preferably 95 mol% or more.

又,芳香族二醇(D)亦可為源自選自由氫醌、4,4’-二羥基聯苯、苯基氫醌、及4,4’-二羥基二苯醚組成之群組的互為相異的二種芳香族二醇的重複單元(D1)與(D2),此時,二種芳香族二醇之莫耳比可為(D1)/(D2)=23/77~77/23,更佳亦可為25/75~75/25,進一步較佳亦可為30/70~70/30。Furthermore, the aromatic diol (D) may be repeating units (D1) and (D2) derived from two different aromatic diols selected from the group consisting of hydroquinone, 4,4'-dihydroxybiphenyl, phenylhydroquinone, and 4,4'-dihydroxydiphenyl ether. In this case, the molar ratio of the two aromatic diols may be (D1)/(D2)=23/77 to 77/23, more preferably 25/75 to 75/25, and even more preferably 30/70 to 70/30.

又,源自芳香族二醇的重複結構單元與源自芳香族二羧酸的重複結構單元之莫耳比,以(D)/(E)=95/100~100/95為較佳。若偏離該範圍,則有聚合度無法提升而機械強度降低之傾向。The molar ratio of the repeating structural unit derived from the aromatic diol to the repeating structural unit derived from the aromatic dicarboxylic acid is preferably (D)/(E) = 95/100 to 100/95. If it deviates from this range, the degree of polymerization cannot be increased and the mechanical strength tends to decrease.

此外,本發明所說的可形成光學上各向異性的熔融相,例如可將試料置於高溫載台,在氮氣環境下升溫加熱,觀察試料之穿透光而藉此進行認定。Furthermore, the optically anisotropic molten phase of the present invention can be identified by placing a sample on a high temperature stage, heating it in a nitrogen environment, and observing the transmitted light of the sample.

熱塑性液晶聚合物之熔點(Tm 0)例如為300~380℃之範圍為較佳,更佳亦可為305~360℃之範圍,進一步較佳亦可為310~350℃之範圍。此外,熱塑性液晶聚合物之熔點,可使用示差掃描熱量計,觀察熱塑性液晶聚合物樣品之熱行為而得。亦即,將熱塑性液晶聚合物樣品以10℃/min的速度升溫而使其完全地熔融後,將熔融物以10℃/min的速度冷卻至50℃,再度以10℃/min的速度升溫後,出現之吸熱波峰之位置,作為熱塑性液晶聚合物樣品之熔點來記錄即可。 The melting point (Tm 0 ) of the thermoplastic liquid crystal polymer is preferably in the range of 300 to 380°C, more preferably in the range of 305 to 360°C, and even more preferably in the range of 310 to 350°C. In addition, the melting point of the thermoplastic liquid crystal polymer can be obtained by observing the thermal behavior of the thermoplastic liquid crystal polymer sample using a differential scanning calorimeter. That is, after the thermoplastic liquid crystal polymer sample is heated at a rate of 10°C/min to completely melt, the melt is cooled to 50°C at a rate of 10°C/min, and the temperature is again raised at a rate of 10°C/min. The position of the endothermic peak that appears can be recorded as the melting point of the thermoplastic liquid crystal polymer sample.

又,從熔融成形性的觀點來看,熱塑性液晶聚合物例如可具有於(Tm 0+20)℃的剪切速度1000/s之熔融黏度30~120Pa・s,較佳亦可具有熔融黏度50~100Pa・s。 From the viewpoint of melt moldability, the thermoplastic liquid crystal polymer may have a melt viscosity of, for example, 30 to 120 Pa·s at a shear rate of 1000/s at (Tm 0 +20)°C, and preferably 50 to 100 Pa·s.

熱塑性液晶聚合物薄膜可在未損及本發明之效果的範圍內包含:聚對苯二甲酸乙二酯、改性聚對苯二甲酸乙二酯、聚烯烴、聚碳酸酯、聚芳酯、聚醯胺、聚苯硫醚、聚醚醚酮、氟樹脂等熱塑性聚合物、各種添加劑。又,亦可因應需要而包含:有機填料、無機填料等填充劑。因此,本發明之熱塑性液晶聚合物薄膜亦包含:由包含熱塑性液晶聚合物作為主成分且包含此等異種聚合物、添加劑、填充劑等之任一種以上之熱塑性液晶聚合物組成物構成之薄膜。The thermoplastic liquid crystal polymer film may include thermoplastic polymers such as polyethylene terephthalate, modified polyethylene terephthalate, polyolefin, polycarbonate, polyarylate, polyamide, polyphenylene sulfide, polyetheretherketone, fluororesin, and various additives within the scope that does not impair the effect of the present invention. In addition, fillers such as organic fillers and inorganic fillers may also be included as needed. Therefore, the thermoplastic liquid crystal polymer film of the present invention also includes a film composed of a thermoplastic liquid crystal polymer composition containing a thermoplastic liquid crystal polymer as a main component and containing any one or more of these heterogeneous polymers, additives, fillers, etc.

熱塑性液晶聚合物薄膜可包含50重量%以上的熱塑性液晶聚合物,較佳亦可包含80重量%以上,更佳亦可包含90重量%以上,進一步較佳亦可包含95重量%以上,進一步更佳亦可包含98重量%以上。The thermoplastic liquid crystal polymer film may contain 50 wt % or more of the thermoplastic liquid crystal polymer, preferably 80 wt % or more, more preferably 90 wt % or more, further preferably 95 wt % or more, further more preferably 98 wt % or more.

熱塑性液晶聚合物薄膜可為將上述的熱塑性液晶聚合物或熱塑性液晶聚合物薄膜組成物擠出成形之擠出成形薄膜。此時,可使用任意的擠出成形法,但周知的T模製膜延伸法、疊層體延伸法、充氣法等在工業上為有利。尤其就充氣法而言,不僅對於熱塑性液晶聚合物薄膜之機械軸方向(以下簡稱MD方向)施加應力,對於與其垂直之方向(以下簡稱TD方向)亦施加應力,可朝MD方向、TD方向均勻地延伸,因此可得到控制了MD方向與TD方向之分子配向性、介電特性等之熱塑性液晶聚合物薄膜。The thermoplastic liquid crystal polymer film can be an extrusion-molded film formed by extruding the above-mentioned thermoplastic liquid crystal polymer or the thermoplastic liquid crystal polymer film composition. At this time, any extrusion molding method can be used, but the well-known T-molded film stretching method, the laminate stretching method, the inflation method, etc. are industrially advantageous. In particular, as for the inflation method, stress is applied not only to the mechanical axis direction (hereinafter referred to as the MD direction) of the thermoplastic liquid crystal polymer film, but also to the direction perpendicular to it (hereinafter referred to as the TD direction), and it can be uniformly extended in the MD direction and the TD direction, so that a thermoplastic liquid crystal polymer film with controlled molecular orientation, dielectric properties, etc. in the MD direction and the TD direction can be obtained.

又,熱塑性液晶聚合物薄膜可在擠出成形後,因應需要而進行延伸。延伸方法本身為周知,可採用雙軸延伸、單軸延伸之任一者,從更易於控制分子配向度來看,雙軸延伸為較佳。又,延伸可使用周知的單軸延伸機、同時雙軸延伸機、逐次雙軸延伸機等。Furthermore, the thermoplastic liquid crystal polymer film can be stretched as needed after extrusion molding. The stretching method itself is well known, and either biaxial stretching or uniaxial stretching can be adopted. Biaxial stretching is preferred because it is easier to control the molecular orientation. Moreover, the stretching can be performed using a well-known uniaxial stretching machine, a simultaneous biaxial stretching machine, a sequential biaxial stretching machine, etc.

就擠出成形而言,亦可伴隨延伸處理以控制配向而,例如,就藉由T模法所為之擠出成形而言,可將從T模擠出之熔融體薄片,不是僅對於熱塑性液晶聚合物薄膜之MD方向延伸,而是對於其與TD方向兩者同時延伸而製膜,或可將從T模擠出之熔融體薄片,暫且朝MD方向延伸,其次朝TD方向延伸而製膜。Extrusion molding may be accompanied by a stretching treatment to control the orientation. For example, in extrusion molding by a T-die method, the molten sheet extruded from the T-die may be stretched not only in the MD direction of the thermoplastic liquid crystal polymer film, but also in both the MD direction and the TD direction to form a film. Alternatively, the molten sheet extruded from the T-die may be temporarily stretched in the MD direction and then stretched in the TD direction to form a film.

又,就藉由充氣法所為之擠出成形而言,可對於從環模熔融擠出之圓筒狀薄片,以規定的延伸比(相當於MD方向之延伸倍率)及吹脹比(相當於TD方向之延伸倍率)延伸而製膜。In addition, in the case of extrusion molding by the inflation method, a cylindrical sheet melt-extruded from a ring die can be stretched at a specified stretch ratio (equivalent to the stretching ratio in the MD direction) and inflation ratio (equivalent to the stretching ratio in the TD direction) to form a film.

又,亦可因應需要而進行周知或慣用的熱處理,調整熱塑性液晶聚合物薄膜之熔點及/或熱膨脹係數。熱處理條件可因應目的而適當設定,例如可藉由以相對於熱塑性液晶聚合物之熔點(Tm 0)而言為(Tm 0-10)℃以上(例如(Tm 0-10)℃~(Tm 0+30)℃左右,較佳為(Tm 0)℃~(Tm 0+20)℃左右)加熱數小時,使熱塑性液晶聚合物薄膜之熔點(Tm)上升。此外,依據熱塑性液晶聚合物薄膜之組成,亦可用更短時間,例如1小時以下的加熱時間,使熔點上升。又,例如亦可藉由以相對於熱塑性液晶聚合物之熔點(Tm 0)而言為(Tm 0-15)℃以上小於(Tm 0)℃的溫度加熱5~60秒鐘(例如10~30秒鐘)而提高熱膨脹係數。 Furthermore, the melting point and/or thermal expansion coefficient of the thermoplastic liquid crystal polymer film may be adjusted by a known or conventional heat treatment as required. The heat treatment conditions may be appropriately set according to the purpose. For example, the melting point ( Tm ) of the thermoplastic liquid crystal polymer film may be increased by heating for several hours at a temperature of (Tm 0 -10)°C or higher (e.g., (Tm 0 -10 )°C to (Tm 0 +30)°C, preferably (Tm 0 )°C to (Tm 0 +20)°C) relative to the melting point (Tm 0 ) of the thermoplastic liquid crystal polymer. In addition, depending on the composition of the thermoplastic liquid crystal polymer film, the melting point may be increased by heating for a shorter time, for example, less than 1 hour. Furthermore, for example, the thermal expansion coefficient may be increased by heating at a temperature of (Tm 0 -15)°C or higher and less than (Tm 0 )°C relative to the melting point (Tm 0 ) of the thermoplastic liquid crystal polymer for 5 to 60 seconds (eg, 10 to 30 seconds).

熱塑性液晶聚合物薄膜之熔點(Tm)例如亦可為315℃以上,較佳亦可為315~380℃,更佳亦可為318~370℃,進一步較佳亦可為320~360℃。此外,熱塑性液晶聚合物薄膜之熔點(Tm)可使用示差掃描熱量計,觀察熱塑性液晶聚合物薄膜樣品之熱行為而得。亦即,可將熱塑性液晶聚合物薄膜樣品從室溫(例如25℃)以10℃/min的速度升溫而在400℃使其完全地熔融後,將熔融物以10℃/min的速度冷卻至50℃,再度以10℃/min的速度升溫時出現之吸熱波峰之位置,作為熱塑性液晶聚合物薄膜之熔點(Tm)求出。The melting point (Tm) of the thermoplastic liquid crystal polymer film may be, for example, above 315°C, preferably 315-380°C, more preferably 318-370°C, and even more preferably 320-360°C. In addition, the melting point (Tm) of the thermoplastic liquid crystal polymer film can be obtained by observing the thermal behavior of the thermoplastic liquid crystal polymer film sample using a differential scanning calorimeter. That is, the thermoplastic liquid crystal polymer film sample can be heated from room temperature (e.g., 25°C) at a rate of 10°C/min and completely melted at 400°C, then the melt is cooled to 50°C at a rate of 10°C/min, and the position of the endothermic peak that appears when the temperature is again heated at a rate of 10°C/min is obtained as the melting point (Tm) of the thermoplastic liquid crystal polymer film.

熱塑性液晶聚合物薄膜之厚度可因應用途而適當設定,例如若考慮使用於電路基板之絕緣層之材料,則可為10~500μm,較佳亦可為15~250μm,更佳亦可為20~200μm,進一步較佳亦可為25~150μm。The thickness of the thermoplastic liquid crystal polymer film can be appropriately set according to the application. For example, if the material is used as an insulating layer of a circuit substrate, the thickness can be 10 to 500 μm, preferably 15 to 250 μm, more preferably 20 to 200 μm, and even more preferably 25 to 150 μm.

(熱塑性液晶聚合物薄膜之表面粗糙度) 就本發明而言,為了提高與金屬層之密合性而利用以下的參數來調整熱塑性液晶聚合物薄膜表面之粗糙度。此等皆為ISO25178所規定之參數,可藉由後述的實施例所記載之方法而測定。 (Surface roughness of thermoplastic liquid crystal polymer film) In the present invention, the following parameters are used to adjust the surface roughness of the thermoplastic liquid crystal polymer film in order to improve the adhesion with the metal layer. These are all parameters specified in ISO25178 and can be measured by the method described in the following embodiment.

偏斜度(偏度)Ssk 本發明之熱塑性液晶聚合物薄膜係至少一表面成為偏斜度Ssk為-5以上0以下的表面。偏斜度係一表示高度相對於基準面之分布的對稱性之參數,當Ssk小於0時,谷較多。偏斜度Ssk係以小於0為較佳,-0.2以下為進一步較佳。偏斜度Ssk可為-0.5以上0以下,亦可為-5以上-2以下。 Skewness (skewness) Ssk The thermoplastic liquid crystal polymer film of the present invention has at least one surface with a skewness Ssk of -5 or more and 0 or less. Skewness is a parameter indicating the symmetry of the distribution of height relative to the reference surface. When Ssk is less than 0, there are more valleys. The skewness Ssk is preferably less than 0, and is further preferably less than -0.2. The skewness Ssk can be greater than -0.5 and less than 0, or greater than -5 and less than -2.

算術平均粗糙度Sa 又,本發明之熱塑性液晶聚合物薄膜,其上述Ssk為-5以上0以下的表面之算術平均粗糙度Sa為0.15μm以上。當Sa小於0.15μm時,有無法以鍍敷、蒸鍍顯現良好的剝離強度之情形。再者,算術平均粗糙度Sa係以0.50μm以下為較佳。算術平均粗糙度Sa可為0.15μm以上0.30μm以下,亦可為0.20μm以上0.50μm以下。若熱塑性液晶聚合物薄膜之至少一表面之Ssk為-5以上0以下且Sa為0.15μm以上,則能兼顧剝離強度與傳輸特性。 Arithmetic mean roughness Sa In addition, the thermoplastic liquid crystal polymer film of the present invention has an arithmetic mean roughness Sa of 0.15μm or more on the surface where the Ssk is -5 or more and 0 or less. When Sa is less than 0.15μm, it may be impossible to show good peeling strength by coating or evaporation. Furthermore, the arithmetic mean roughness Sa is preferably 0.50μm or less. The arithmetic mean roughness Sa may be 0.15μm or more and 0.30μm or more and 0.20μm or more and 0.50μm or less. If the Ssk of at least one surface of the thermoplastic liquid crystal polymer film is -5 or more and 0 or less and Sa is 0.15μm or more, peeling strength and transmission characteristics can be taken into account.

除了偏斜度與算術平均粗糙度以外,亦調整下述的表面粗糙度參數為較佳。 最大峰高Sp 上述表面之最大峰高Sp係以0.15μm以上3.0μm以下為較佳。最大峰高Sp係以0.5μm以上為更佳。最大峰高Sp可為0.5μm以上1.0μm以下,亦可為2.0μm以上3.0μm以下。 In addition to the skewness and arithmetic mean roughness, the following surface roughness parameters are also adjusted for better results. Maximum peak height Sp The maximum peak height Sp of the above surface is preferably 0.15μm or more and 3.0μm or less. The maximum peak height Sp is more preferably 0.5μm or more. The maximum peak height Sp can be 0.5μm or more and 1.0μm or less, or 2.0μm or more and 3.0μm or less.

最大谷深Sv 上述表面之最大谷深Sv係以0.2μm以上3.5μm以下為較佳。最大谷深Sv係以1.0μm以上3.0μm以下為進一步較佳,1.5μm以上2.0μm以下為更佳。 Maximum valley depth Sv The maximum valley depth Sv of the above surface is preferably 0.2μm to 3.5μm. The maximum valley depth Sv is further preferably 1.0μm to 3.0μm, and even more preferably 1.5μm to 2.0μm.

最大高度Sz 上述表面之最大高度Sz係以1.5μm以上5.0μm以下為較佳。最大高度Sz係以2.0μm以上為更佳。最大高度Sz可為2.0μm以上3.0μm以下,亦可為3.5μm以上5.0μm以下。 Maximum height Sz The maximum height Sz of the above surface is preferably 1.5μm or more and 5.0μm or less. The maximum height Sz is more preferably 2.0μm or more. The maximum height Sz may be 2.0μm or more and 3.0μm or less, or 3.5μm or more and 5.0μm or less.

峰態Sku 峰態Sku亦可為1.0以上40.0以下,較佳為1.5以上30.0以下,更佳為亦可為2.5以上20.0以下。 Peak Sku The peak Sku can be 1.0 to 40.0, preferably 1.5 to 30.0, and more preferably 2.5 to 20.0.

(熱塑性液晶聚合物薄膜之表面粗糙度之調整方法) 熱塑性液晶聚合物薄膜之表面粗糙度,可藉由以下的方法之任一者、或此等之併用而調整。 (1)相對於薄膜之搬運速度而言之加熱輥之周速度之調整 沿著加熱輥(例如金屬輥)而搬運薄膜時,藉由改變相對於薄膜之搬運速度而言之加熱輥之周速度,可使薄膜表面發生扭曲(歪み),調整表面粗糙度。加熱輥之周速度相對於薄膜之搬運速度之比,以(薄膜之搬運速度/加熱輥之周速度)而言,較佳為0.95以上0.99以下。 (2)在加熱輥上的薄膜之收縮 若沿著凸面加熱輥(クラウン加熱ロール)而搬運薄膜,則薄膜會有張力從兩端朝中心部產生,因此可在薄膜形成皺紋。此時,薄膜面上的山部會被輥按壓而被壓扁,因此可形成谷部經突顯之表面。此外,若使用TD方向之熱膨脹率為負的熱塑性液晶聚合物薄膜,則可有效率地使皺紋產生。此過程可一邊以相對於熱塑性液晶聚合物薄膜之熔點Tm而言為Tm-110℃~Tm-5℃左右的溫度加熱薄膜一邊進行。 (Method for adjusting the surface roughness of thermoplastic liquid crystal polymer film) The surface roughness of the thermoplastic liquid crystal polymer film can be adjusted by any of the following methods or by a combination of these methods. (1) Adjustment of the peripheral speed of the heating roller relative to the film conveying speed When the film is conveyed along a heating roller (e.g., a metal roller), the peripheral speed of the heating roller relative to the film conveying speed can be changed to cause the film surface to be distorted and the surface roughness can be adjusted. The ratio of the peripheral speed of the heating roller to the film conveying speed is preferably 0.95 or more and 0.99 or less in terms of (film conveying speed/peripheral speed of the heating roller). (2) Shrinkage of the film on the heating roller If the film is transported along the convex heating roller, tension will be generated from both ends to the center of the film, so wrinkles can be formed in the film. At this time, the mountain parts on the film surface are pressed and flattened by the roller, so a surface with prominent valleys can be formed. In addition, if a thermoplastic liquid crystal polymer film with a negative thermal expansion coefficient in the TD direction is used, wrinkles can be generated efficiently. This process can be carried out while heating the film at a temperature of about Tm-110℃ to Tm-5℃ relative to the melting point Tm of the thermoplastic liquid crystal polymer film.

(3)表面粗化輥之粗糙面之轉印 若沿著經表面粗化之加熱輥而搬運薄膜,則加熱輥粗糙面會轉印至熱塑性液晶聚合物薄膜之表面。此時,若使用例如經壓花加工有線狀圖案之金屬輥作為加熱輥,則可對於熱塑性液晶聚合物薄膜賦予由平坦面與谷部構成之表面。此時,金屬輥之表面粗糙度之較佳的範圍係根據JIS B 0601:2001所測定之算術平均粗糙度Ra為0.2~3.0μm、最大高度粗糙度Rz為0.4~20.0μm、十點平均粗糙度Rzjis為0.3~20.0μm。加熱輥之溫度係設為相對於熱塑性液晶聚合物薄膜之熔點Tm而言為Tm-110℃~Tm-5℃左右的溫度即可。 (3) Transfer of the rough surface of the surface roughening roller If the film is transported along the surface roughened heating roller, the rough surface of the heating roller will be transferred to the surface of the thermoplastic liquid crystal polymer film. In this case, if a metal roller with a linear pattern embossed is used as the heating roller, a surface consisting of a flat surface and valleys can be given to the thermoplastic liquid crystal polymer film. In this case, the preferred range of the surface roughness of the metal roller is an arithmetic mean roughness Ra of 0.2 to 3.0 μm, a maximum height roughness Rz of 0.4 to 20.0 μm, and a ten-point average roughness Rzjis of 0.3 to 20.0 μm as measured in accordance with JIS B 0601:2001. The temperature of the heating roller can be set to a temperature of about Tm-110℃ to Tm-5℃ relative to the melting point Tm of the thermoplastic liquid crystal polymer film.

(4)藉由表面粗化輥所為之按壓 當將薄膜夾在二個輥間一邊按壓一邊搬運時,藉由將表面經粗化者使用於至少一個輥,可將輥之粗糙面轉印至薄膜面,作成所欲之粗化面。就該方法而言,例如可使用:施加了壓花加工等表面加工之橡膠輥、藉由噴砂等而進行了表面粗化之金屬輥。此過程可一邊以相對於熱塑性液晶聚合物薄膜之熔點Tm而言為Tm-80℃~Tm-5℃左右的溫度加熱薄膜一邊進行。例如可一邊利用金屬加熱輥來加熱薄膜,一邊利用經表面粗化之橡膠輥來按壓。 (4) Pressing by a surface roughening roller When the film is sandwiched between two rollers and pressed while being transported, the rough surface of the roller can be transferred to the film surface by using a roughened surface on at least one roller to make the desired roughened surface. For this method, for example, a rubber roller with a surface treatment such as embossing or a metal roller with a surface roughened by sandblasting can be used. This process can be performed while heating the film at a temperature of about Tm-80℃ to Tm-5℃ relative to the melting point Tm of the thermoplastic liquid crystal polymer film. For example, the film can be heated by a metal heating roller while being pressed by a surface roughened rubber roller.

作為調整熱塑性液晶聚合物薄膜之表面粗糙度之方法,將具有規定的表面粗糙度之金屬箔與熱塑性液晶聚合物薄膜積層壓接後利用蝕刻而去除金屬箔之方法亦為人所知,但此時有金屬之殘渣會殘留於熱塑性液晶聚合物薄膜表面之情形。相對於此,上述的方法,金屬殘渣不會殘留於熱塑性液晶聚合物薄膜表面,可作成無金屬的表面。As a method for adjusting the surface roughness of a thermoplastic liquid crystal polymer film, a method is also known in which a metal foil having a predetermined surface roughness is laminated and pressed onto the thermoplastic liquid crystal polymer film and then the metal foil is removed by etching. However, in this case, metal residues may remain on the surface of the thermoplastic liquid crystal polymer film. In contrast, in the above method, metal residues will not remain on the surface of the thermoplastic liquid crystal polymer film, and a metal-free surface can be produced.

熱塑性液晶聚合物薄膜之表面粗糙度之調整,可在熱塑性液晶聚合物薄膜單獨體(単体)的狀態進行,但亦可在將支撐體積層於熱塑性液晶聚合物薄膜之單面的狀態,調整另一面之表面粗糙度。例如,可製作將金屬箔積層於熱塑性液晶聚合物薄膜單面之單面覆金屬積層板,之後,進行熱塑性液晶聚合物薄膜側表面之粗化。或者,可在金屬箔與熱塑性液晶聚合物薄膜之熱壓接步驟中,將經表面粗化之輥使用於熱塑性液晶聚合物薄膜側的輥,而同時進行單面覆金屬積層板之製作、與熱塑性液晶聚合物薄膜面之表面粗化。The surface roughness of the thermoplastic liquid crystal polymer film can be adjusted in the state of the thermoplastic liquid crystal polymer film alone (monomer), but it is also possible to adjust the surface roughness of the other side in the state where the support volume is laminated on one side of the thermoplastic liquid crystal polymer film. For example, a single-sided metal-coated laminate in which a metal foil is laminated on one side of the thermoplastic liquid crystal polymer film can be produced, and then the surface of the thermoplastic liquid crystal polymer film side can be roughened. Alternatively, in the step of hot pressing the metal foil and the thermoplastic liquid crystal polymer film, a roller with a roughened surface can be used as a roller on the side of the thermoplastic liquid crystal polymer film, and the single-sided metal-coated laminate and the surface roughening of the thermoplastic liquid crystal polymer film surface can be simultaneously performed.

當在本發明中調整熱塑性液晶聚合物薄膜之表面粗糙度之際使用金屬箔作為支撐體之情形,可藉由周知的方法而形成單面覆金屬積層板。作為金屬箔,並無特別限制,可使用:鋁或鋁合金箔、不鏽鋼箔、壓延銅箔、電解銅箔等。When a metal foil is used as a support when adjusting the surface roughness of the thermoplastic liquid crystal polymer film in the present invention, a single-sided metal-clad laminate can be formed by a known method. The metal foil is not particularly limited, and aluminum or aluminum alloy foil, stainless steel foil, rolled copper foil, electrolytic copper foil, etc. can be used.

金屬箔之厚度例如可為1~100μm,亦可使用經施加表面粗化處理者。熱塑性液晶聚合物薄膜與金屬箔,可使用一對金屬輥、或金屬輥與橡膠輥等,例如一邊以相對於熱塑性液晶聚合物薄膜之熔點(Tm)而言為(Tm-80)℃~(Tm)℃之範圍的加熱溫度加熱,一邊以卷對卷法施加1~15kg/mm左右的壓力而進行熱壓接。The thickness of the metal foil can be, for example, 1 to 100 μm, and a surface roughening treatment can also be used. The thermoplastic liquid crystal polymer film and the metal foil can be heat-pressed by using a pair of metal rolls, or a metal roll and a rubber roll, for example, while heating at a heating temperature in the range of (Tm-80)°C to (Tm)°C relative to the melting point (Tm) of the thermoplastic liquid crystal polymer film, and applying a pressure of about 1 to 15 kg/mm by a roll-to-roll method.

可在熱壓接時,以使聚醯亞胺薄膜等保護材接觸經疊合之熱塑性液晶聚合物薄膜及金屬箔之外側的方式進行疊合,導入一對加壓輥並進行熱壓接,之後,在熱處理步驟前從單面覆金屬積層板分離。但是,當同時進行熱塑性液晶聚合物薄膜之表面粗糙度之調整與熱壓接時,不在熱塑性液晶聚合物薄膜側設置保護材。During the heat pressing, the laminated thermoplastic liquid crystal polymer film and the metal foil may be laminated in such a manner that a protective material such as a polyimide film contacts the outer side of the laminated thermoplastic liquid crystal polymer film and the metal foil, and then introduced into a pair of pressure rollers and heat pressed, and then separated from the single-sided metal-clad laminate before the heat treatment step. However, when the surface roughness of the thermoplastic liquid crystal polymer film is adjusted and heat pressed at the same time, the protective material is not provided on the thermoplastic liquid crystal polymer film side.

(積層體) 本發明之積層體(以下有時稱為積層體)係包含熱塑性液晶聚合物薄膜之積層體,該熱塑性液晶聚合物薄膜係在至少一表面中,偏斜度Ssk為-5以上0以下,且算術平均粗糙度Sa為0.15μm以上。 (Laminate) The laminate of the present invention (hereinafter sometimes referred to as a laminate) is a laminate comprising a thermoplastic liquid crystal polymer film, wherein the thermoplastic liquid crystal polymer film has a skewness Ssk of -5 to 0 on at least one surface and an arithmetic mean roughness Sa of 0.15 μm or more.

在此,若將熱塑性液晶聚合物薄膜之單面設為第1面,其相反面設為第2面,且第1面設為顯示上述的Ssk值及Sa值之面,則積層體可為利用蒸鍍、濺鍍、化學鍍敷(無電解鍍敷、電解鍍敷)等方法將金屬層(金屬皮膜)形成於第1面上者。或者,亦可為於此等金屬層施加電路加工者。Here, if one side of the thermoplastic liquid crystal polymer film is set as the first side, the opposite side thereof is set as the second side, and the first side is set as the side showing the above-mentioned Ssk value and Sa value, the laminate may be formed by forming a metal layer (metal film) on the first side by evaporation, sputtering, chemical plating (electroless plating, electrolytic plating), etc. Alternatively, the laminate may be formed by applying circuit processing to such metal layers.

濺鍍法或蒸鍍法中,進行:藉由濺鍍或蒸鍍金屬而使金屬部分進行接觸而將兩者接著之步驟。濺鍍法或蒸鍍法,在電子基板製造之領域為周知的方法。作為濺鍍用或蒸鍍用的金屬,例如可列舉:銅、鋁、金、錫、鉻等。In the sputtering method or the evaporation method, a step is performed to bring metal parts into contact and connect the two parts by sputtering or evaporating metal. The sputtering method or the evaporation method is a well-known method in the field of electronic substrate manufacturing. Examples of metals used for sputtering or evaporation include copper, aluminum, gold, tin, chromium, etc.

無電解鍍敷法中,進行:藉由使金屬從包含金屬離子之溶液析出至薄膜上而將兩者接著之步驟。無電解鍍敷法,在非導電性材料(塑膠、陶瓷等)鍍敷製品之製造領域為周知的方法,作為金屬,可列舉:銅、鎳、鈷、金、錫、鉻等。In the electroless plating method, a step is performed in which a metal is deposited from a solution containing metal ions onto a thin film and then the two are connected. The electroless plating method is a well-known method in the field of manufacturing non-conductive materials (plastics, ceramics, etc.) plated products. Examples of metals include copper, nickel, cobalt, gold, tin, chromium, etc.

由濺鍍、蒸鍍、無電解鍍敷等方法所形成之金屬層亦可進一步藉由使用了同種或異種金屬之電解鍍敷而厚膜化。The metal layer formed by sputtering, evaporation, electroless plating and the like can be further thickened by electrolytic plating using the same or different metals.

金屬層之厚度,可因應覆金屬積層板之用途等而適當設定,例如可選自10nm~100μm之廣範圍,當使用金屬箔作為金屬層時,金屬層之厚度可為1~100μm,較佳亦可為5~50μm,更佳亦可為8~35μm。又,當利用濺鍍、蒸鍍、無電解鍍敷等、或利用此等與電解鍍敷之組合來形成金屬層時,金屬層之厚度可為10nm~35μm,較佳亦可為50nm~12μm,更佳亦可為100nm~9μm。The thickness of the metal layer can be appropriately set according to the purpose of the metal-clad laminate, for example, it can be selected from a wide range of 10nm to 100μm. When a metal foil is used as the metal layer, the thickness of the metal layer can be 1 to 100μm, preferably 5 to 50μm, and more preferably 8 to 35μm. In addition, when the metal layer is formed by sputtering, evaporation, electroless plating, or a combination of these and electrolytic plating, the thickness of the metal layer can be 10nm to 35μm, preferably 50nm to 12μm, and more preferably 100nm to 9μm.

本發明之熱塑性液晶聚合物薄膜適合進行藉由半加成法所為之細微電路加工者,但藉由其它方法所為之電路形成並不構成妨礙,例如亦可為使用導電性印墨描繪電路而成者。尤其,當第1面之最大谷深Sv為0.2μm以上2.0μm以下時,導電性印墨之附著性亦優異。The thermoplastic liquid crystal polymer film of the present invention is suitable for fine circuit processing by semi-additive method, but circuit formation by other methods does not constitute an obstacle, for example, it can also be formed by drawing the circuit using conductive ink. In particular, when the maximum valley depth Sv of the first surface is not less than 0.2μm and not more than 2.0μm, the adhesion of the conductive ink is also excellent.

藉由導電性印墨所為之圖案之描繪,可利用藉由馬克筆所為之描線、藉由噴墨所為之描線、藉由網版印刷所為之印刷等而進行,並未特別限定。作為導電性印墨,可使用:包含Au、Pt、Ag、Cu、Ni、Cr、Rh、Pd、Zn、Co、Mo、Ru、W、Os、Ir、Fe、Mn、Ge、Sn、Ga、In等金屬微粒之水性或油性的印墨。進行藉由導電性印墨所為之描繪後,較佳為了將金屬微粒燒結而進行熱處理。燒結可在180~450℃左右的溫度進行,但熱處理溫度係以設為比為基材的熱塑性液晶聚合物薄膜之熔點更低的溫度為較佳。The drawing of the pattern by the conductive ink can be performed by drawing with a marker, drawing with an inkjet, printing by screen printing, etc., and is not particularly limited. As the conductive ink, water-based or oil-based ink containing metal particles such as Au, Pt, Ag, Cu, Ni, Cr, Rh, Pd, Zn, Co, Mo, Ru, W, Os, Ir, Fe, Mn, Ge, Sn, Ga, In, etc. can be used. After drawing with the conductive ink, it is preferred to perform heat treatment in order to sinter the metal particles. Sintering can be performed at a temperature of about 180 to 450°C, but the heat treatment temperature is preferably set to a temperature lower than the melting point of the thermoplastic liquid crystal polymer film serving as the substrate.

又,本發明之積層體亦可為藉由上述的方法而於第2面壓接了金屬箔者。又,亦可為藉由濺鍍、蒸鍍、化學鍍敷等而於第2面上形成了金屬層者。此時,第2面之表面粗糙度亦可藉由上述的方法而調整為偏斜度Ssk為-5以上0以下。Furthermore, the laminate of the present invention may be one in which a metal foil is pressed and bonded to the second surface by the above method. Alternatively, a metal layer may be formed on the second surface by sputtering, evaporation, chemical plating, etc. In this case, the surface roughness of the second surface may be adjusted to a skewness Ssk of not less than -5 and not more than 0 by the above method.

本發明之積層體可有效地使用作為在電氣・電子領域、事務機器・精密儀器領域、功率半導體領域等中使用之零件,例如可有效地使用作為電路基板材料。The multilayer body of the present invention can be effectively used as a component used in the electrical and electronic fields, office machinery and precision instrument fields, power semiconductor fields, etc., and can be effectively used as a circuit board material, for example.

使用本發明之積層體之電路基板係在高頻用電路基板、車用感測器、行動用電路基板、天線等用途中為理想。 [實施例] The circuit substrate using the multilayer body of the present invention is ideal for use in high-frequency circuit substrates, automotive sensors, mobile circuit substrates, antennas, etc. [Example]

以下藉由實施例而更詳細說明本發明,但本發明並未因本實施例而受到任何限定。此外,在以下的實施例及比較例中,係藉由下述的方法而測定各種物性。The present invention is described in more detail below by way of examples, but the present invention is not limited by the examples. In addition, in the following examples and comparative examples, various physical properties are measured by the following methods.

[厚度] 各種材料之厚度係使用數位型指示器(デジマチックインジケータ)(Mitutoyo股份有限公司製)而測定。測定係在寬度方向以1cm間隔來測定對象之材料,將從中心部及端部任意地選擇之10點的平均值設為厚度。 [Thickness] The thickness of various materials is measured using a digital indicator (made by Mitutoyo Co., Ltd.). The material to be measured is measured at intervals of 1 cm in the width direction, and the average value of 10 points randomly selected from the center and the ends is set as the thickness.

[熔點] 使用示差掃描熱量計(島津製作所股份有限公司製),從熱塑性液晶聚合物薄膜,採樣規定的大小並投入試料容器,從室溫以10℃/min的速度升溫而在400℃使其完全地熔融後,將熔融物以10℃/min的速度冷卻至50℃,再度以10℃/min的速度升溫時,出現之吸熱波峰之位置,作為熱塑性液晶聚合物薄膜之熔點(Tm)求出。 [Melting point] Using a differential scanning calorimeter (manufactured by Shimadzu Corporation), samples of a specified size were taken from the thermoplastic liquid crystal polymer film and placed in a sample container. The temperature was raised from room temperature at a rate of 10°C/min to completely melt at 400°C. The melt was then cooled to 50°C at a rate of 10°C/min. When the temperature was raised again at a rate of 10°C/min, the position of the endothermic peak that appeared was determined as the melting point (Tm) of the thermoplastic liquid crystal polymer film.

[表面粗糙度之測定] 熱塑性液晶聚合物薄膜的薄膜表面之表面粗糙度,其係根據ISO25178,利用Lasertec股份有限公司製白色共軛焦顯微鏡(OPTELICS HYBRID(L)),分別測定算術平均粗糙度Sa、最大峰高Sp、最大高度Sz、偏度Ssk、峰度Sku。使用雷射顯微鏡之物鏡50倍,以光學解析度0.05μm、測定範圍74.24μm×74.24μm之面積(5512μm 2),針對30cm寬的樣品之中央、兩側三處進行,將該三處之Sa、Sz、Ssk、Sku之值之算術平均值設為Sa、Sz、Ssk、Sku之值。此外,在白色共軛焦顯微鏡測定中,當測定結果之測定面不是平面而是成為曲面時,則在進行平面校正後,算出上述各表面性狀。此外,藉由白色共軛焦顯微鏡所為之測定環境係設為溫度23±2℃、溼度50%±5%。 [Measurement of surface roughness] The surface roughness of the thermoplastic liquid crystal polymer film was measured according to ISO25178 using a white conjugate microscope (OPTELICS HYBRID(L)) manufactured by Lasertec Co., Ltd. to measure the arithmetic mean roughness Sa, maximum peak height Sp, maximum height Sz, skewness Ssk, and kurtosis Sku. The laser microscope was magnified 50 times, with an optical resolution of 0.05μm and a measurement range of 74.24μm×74.24μm (5512μm 2 ). The measurement was performed at three locations, the center and both sides of a 30cm wide sample. The arithmetic mean of the values of Sa, Sz, Ssk, and Sku at the three locations was set as the value of Sa, Sz, Ssk, and Sku. In addition, in the white confocal microscope measurement, when the measurement surface of the measurement result is not a flat surface but a curved surface, the above surface properties are calculated after plane correction. In addition, the measurement environment for the white confocal microscope is set to a temperature of 23±2℃ and a humidity of 50%±5%.

<銅層/LCP薄膜界面之剝離強度之測定> 從積層體之銅蒸鍍層製作5mm寬的電路,利用雙面接著膠帶將熱塑性液晶聚合物薄膜固定於平板,根據JIS C 5016,藉由90°法,測定以50mm/分的速度剝離銅箔時的強度。表之結果係從樣品寬度進行單位換算。 <Determination of peel strength of copper layer/LCP film interface> A 5mm wide circuit was made from the copper vapor-deposited layer of the laminate, and the thermoplastic liquid crystal polymer film was fixed to a flat plate using double-sided adhesive tape. The strength when the copper foil was peeled off at a speed of 50mm/min was measured using the 90° method according to JIS C 5016. The results in the table are converted from the sample width.

<傳輸損耗・阻抗之測定> 將銅蒸鍍於樣品後,利用鍍敷浴將銅箔層鍍敷至12μm。之後,形成微帶線結構。此時,以特性阻抗成為50Ω的方式製作電路。針對該電路,使用微波網路分析儀(Agilent Technologies公司製「8722ES」),利用Cascade Microtech製探針(ACP40-250)以50GHz測定傳輸損耗與阻抗。此外,傳輸損耗係將電路基板在溫度23℃、溼度60%RH環境下放置96小時後緊接著進行測定。 <Measurement of transmission loss and impedance> After copper was evaporated on the sample, a copper foil layer was deposited to 12μm using a plating bath. Then, a microstrip line structure was formed. At this time, the circuit was made so that the characteristic impedance became 50Ω. For this circuit, the transmission loss and impedance were measured at 50GHz using a microwave network analyzer ("8722ES" made by Agilent Technologies) and a probe (ACP40-250) made by Cascade Microtech. In addition, the transmission loss was measured immediately after the circuit substrate was placed in an environment with a temperature of 23℃ and a humidity of 60%RH for 96 hours.

實施例1 將對羥基苯甲酸與6-羥基-2-萘甲酸之共聚物(莫耳比:80/20)使用單螺桿擠出機以280~340℃加熱混練後,由直徑40mm、縫間隔0.6mm的充氣模擠出,得到厚度50μm、熔點320℃的熱塑性液晶聚合物薄膜。 其次,將壓花加工成表面粗糙度為Ra0.9μm、Rz6.7μm、Rzjis4.9μm之金屬輥之加熱溫度設為250℃,將金屬輥周速度相對於薄膜搬運速度之速度比設為0.98,以環抱時間(抱き時間)成為30秒的方式搬運熱塑性液晶聚合物薄膜,使薄膜收縮,得到表面形狀(表面粗糙度)經控制之薄膜。此外,在經壓花加工之金屬輥之表面粗糙度中,Ra為算術平均粗糙度,Rz為最大高度粗糙度,Rzjis為十點平均粗糙度,分別為根據JIS B 0601:2001所測定之值。又,上述的「環抱時間」係意指在使熱塑性液晶聚合物薄膜接觸金屬輥表面而搬運之步驟中,薄膜接觸金屬輥表面之時間。 Example 1 The copolymer of p-hydroxybenzoic acid and 6-hydroxy-2-naphthoic acid (molar ratio: 80/20) was heated and kneaded at 280-340°C using a single screw extruder, and then extruded through an inflation mold with a diameter of 40 mm and a slit spacing of 0.6 mm to obtain a thermoplastic liquid crystal polymer film with a thickness of 50 μm and a melting point of 320°C. Next, the heating temperature of the metal roller embossed to a surface roughness of Ra0.9μm, Rz6.7μm, and Rzjis4.9μm was set to 250°C, the speed ratio of the metal roller circumferential speed to the film transport speed was set to 0.98, and the thermoplastic liquid crystal polymer film was transported in a manner of embracing time (embracing time) of 30 seconds to shrink the film, thereby obtaining a film with controlled surface shape (surface roughness). In addition, in the surface roughness of the metal roller embossed, Ra is the arithmetic average roughness, Rz is the maximum height roughness, and Rzjis is the ten-point average roughness, which are values measured according to JIS B 0601:2001. In addition, the above-mentioned "embracing time" means the time that the thermoplastic liquid crystal polymer film contacts the surface of the metal roller during the step of transporting the film by contacting the surface of the metal roller.

實施例2 除了將金屬輥周速度相對於薄膜之搬運速度之速度比設為0.99,將環抱時間設為10秒以外,與實施例1同樣地得到表面形狀經控制之熱塑性液晶聚合物薄膜。 Example 2 Except that the speed ratio of the metal roller circumferential speed to the film transport speed is set to 0.99 and the wrapping time is set to 10 seconds, a thermoplastic liquid crystal polymer film with controlled surface shape is obtained in the same manner as in Example 1.

實施例3 與實施例1同樣地藉由充氣成膜法而得到厚度50μm的熱塑性液晶聚合物薄膜。 另一方面,使用1200號的旋轉式砂紙而研磨耐熱橡膠輥之表面,準備經表面粗化之耐熱橡膠輥。在將上述熱塑性液晶聚合物薄膜與銅箔(JX金屬股份有限公司:JXEFL-BHM箔,厚度12μm)疊合之狀態,使熱塑性液晶聚合物薄膜側接觸上述耐熱橡膠輥而一邊沿著耐熱橡膠輥一邊以速度3mm/min搬運,並在導入耐熱橡膠輥與加熱金屬輥之間以使其積層壓接的同時,將耐熱橡膠輥之粗化面轉印至熱塑性液晶聚合物薄膜面,得到單面覆銅積層板。加熱金屬輥之溫度係設定為240℃,又,將在積層壓接時施加於熱塑性液晶聚合物薄膜及銅箔之壓力以面壓換算設定為40kg/cm 2Example 3 A thermoplastic liquid crystal polymer film having a thickness of 50 μm was obtained by the air-filled film forming method in the same manner as in Example 1. Meanwhile, the surface of a heat-resistant rubber roller was ground using 1200-grit rotary sandpaper to prepare a heat-resistant rubber roller having a roughened surface. The TLCP film and copper foil (JX Metal Co., Ltd.: JXEFL-BHM foil, thickness 12μm) were stacked, and the TLCP film was moved along the heat-resistant rubber roller at a speed of 3mm/min while being brought into contact with the heat-resistant rubber roller. The roughened surface of the heat-resistant rubber roller was transferred to the TLCP film surface while being introduced between the heat-resistant rubber roller and the heated metal roller for lamination and pressure bonding, thereby obtaining a single-sided copper-clad laminate. The temperature of the heated metal roller was set to 240°C, and the pressure applied to the TLCP film and the copper foil during lamination and pressure bonding was set to 40kg/ cm2 in terms of surface pressure.

實施例4 除了將熱塑性液晶聚合物薄膜與金屬箔之積層體沿著耐熱橡膠輥以速度1mm/min移動以外,與實施例3同樣地得到單面覆銅積層板。 Example 4 Except that the laminate of the thermoplastic liquid crystal polymer film and the metal foil is moved along the heat-resistant rubber roller at a speed of 1 mm/min, a single-sided copper-clad laminate is obtained in the same manner as in Example 3.

比較例1 將對羥基苯甲酸與6-羥基-2-萘甲酸之共聚物(莫耳比:80/20),一邊排氣一邊從擠出機擠出,利用T模進行製膜而得到厚度50μm、熔點320℃的熱塑性液晶聚合物薄膜。 將上述的熱塑性液晶聚合物薄膜與銅箔(JX金屬股份有限公司製,JXEFL-BHM箔,12μm)積層,進一步將聚醯亞胺薄膜(Kaneka股份有限公司製,「Apical」50μm)配置於上下作為保護材,移動至設定為表面溫度280℃線壓4.2kg/mm之1對加熱金屬輥之間,之後將積層體一邊搬運一邊冷卻,在冷卻後剝離聚醯亞胺薄膜,得到由銅箔與平滑的液晶聚合物薄膜構成之單面覆銅積層板。 Comparative Example 1 The copolymer of p-hydroxybenzoic acid and 6-hydroxy-2-naphthoic acid (molar ratio: 80/20) was extruded from an extruder while exhausting air, and a film was formed using a T-die to obtain a thermoplastic liquid crystal polymer film with a thickness of 50 μm and a melting point of 320°C. The above-mentioned thermoplastic liquid crystal polymer film and copper foil (JX Metal Co., Ltd., JXEFL-BHM foil, 12μm) are laminated, and polyimide films (Kaneka Co., Ltd., "Apical" 50μm) are further arranged on the top and bottom as protective materials, and moved between a pair of heated metal rollers set at a surface temperature of 280℃ and a linear pressure of 4.2kg/mm. The laminate is then transported while being cooled, and the polyimide film is peeled off after cooling to obtain a single-sided copper-clad laminate composed of copper foil and a smooth liquid crystal polymer film.

比較例2 與實施例1同樣地藉由充氣成膜法而得到厚度50μm的熱塑性液晶聚合物薄膜。 之後,準備具有光澤的耐熱橡膠輥、與溫度設為240℃之加熱金屬輥,在將上述熱塑性液晶聚合物薄膜與銅箔(JX金屬股份有限公司:JXEFL-BHM箔,厚度12μm)疊合之狀態,使熱塑性液晶聚合物薄膜側接觸上述耐熱橡膠輥而一邊沿著耐熱橡膠輥一邊以速度2mm/min搬運,並在導入耐熱橡膠輥與加熱金屬輥之間以使其積層壓接的同時,將耐熱橡膠輥之光澤面轉印至熱塑性液晶聚合物薄膜面,得到單面覆銅積層板。將在積層壓接時施加於熱塑性液晶聚合物薄膜及銅箔之壓力以面壓換算設定為40kg/cm 2Comparative Example 2 A thermoplastic liquid crystal polymer film with a thickness of 50 μm was obtained by the air inflation film forming method in the same manner as in Example 1. Afterwards, a glossy heat-resistant rubber roller and a heated metal roller set at a temperature of 240°C were prepared. The thermoplastic liquid crystal polymer film and a copper foil (JX Metal Co., Ltd.: JXEFL-BHM foil, thickness 12 μm) were overlapped, and the thermoplastic liquid crystal polymer film was brought into contact with the heat-resistant rubber roller and conveyed along the heat-resistant rubber roller at a speed of 2 mm/min. The glossy surface of the heat-resistant rubber roller was transferred to the surface of the thermoplastic liquid crystal polymer film while being introduced between the heat-resistant rubber roller and the heated metal roller for lamination and pressure bonding, thereby obtaining a single-sided copper-clad laminate. The pressure applied to the TLCP film and the copper foil during lamination was set to 40 kg/cm 2 in terms of surface pressure.

比較例3 與比較例1同樣地,由來自T模而來之經擠出成膜之熱塑性液晶聚合物薄膜、與銅箔,製作單面覆銅積層板。 之後,準備將氫氧化鉀30wt%、單乙醇胺40wt%、水30wt%的溶液製成90℃而得之溶液,以浸漬時間成為90秒的方式搬運,對於熱塑性液晶聚合物薄膜表面進行化學蝕刻。 Comparative Example 3 Similarly to Comparative Example 1, a single-sided copper-clad laminate was made from a thermoplastic liquid crystal polymer film extruded from a T-die and a copper foil. Afterwards, a solution of 30wt% potassium hydroxide, 40wt% monoethanolamine, and 30wt% water was prepared to a temperature of 90°C, and the solution was transported with an immersion time of 90 seconds to chemically etch the surface of the thermoplastic liquid crystal polymer film.

比較例4 藉由與實施例1相同的充氣成膜法,得到厚度50μm的熱塑性液晶聚合物薄膜。其次,與比較例1同樣地,將該熱塑性液晶聚合物薄膜與銅箔積層壓接,製作單面覆銅積層板。 之後,一邊以搬運速度1m/min搬運該單面覆銅積層板,一邊使用使碳化矽之研磨材附著於耐綸纖維之1000網目的拋光輥,對於熱塑性液晶聚合物薄膜側表面,以轉速2000rpm的高速旋轉進行拋光研磨。 Comparative Example 4 A thermoplastic liquid crystal polymer film with a thickness of 50 μm was obtained by the same inflation film forming method as in Example 1. Next, the thermoplastic liquid crystal polymer film was pressed and bonded to a copper foil laminate in the same manner as in Comparative Example 1 to produce a single-sided copper-clad laminate. Thereafter, while the single-sided copper-clad laminate was transported at a transport speed of 1 m/min, a 1000 mesh polishing roller with a silicon carbide abrasive attached to resistant polyester was used to polish the side surface of the thermoplastic liquid crystal polymer film at a high speed of 2000 rpm.

比較例5 藉由與實施例1相同的充氣成膜法,得到厚度50μm的熱塑性液晶聚合物薄膜。其次,與比較例1同樣地,將經充氣成膜之熱塑性液晶聚合物薄膜與銅箔積層壓接,製作單面覆銅積層板。 之後,使用溼式噴砂裝置而進行熱塑性液晶聚合物薄膜面之噴砂處理。使用平均粒徑14μm的多角形氧化鋁作為研磨材,以研磨材之濃度15質量%作成與水之混合物,利用寬幅噴砂槍進行噴射。噴射壓力係設為0.25MPa。一邊以上述的條件進行噴砂,一邊以搬運速度50mm/s搬運貼在平板之單面覆銅積層板,進行熱塑性液晶聚合物薄膜面之噴砂處理。 Comparative Example 5 A thermoplastic liquid crystal polymer film with a thickness of 50 μm was obtained by the same inflation film forming method as in Example 1. Next, the inflation film-forming thermoplastic liquid crystal polymer film was pressed and bonded to a copper foil laminate in the same manner as in Comparative Example 1 to produce a single-sided copper-clad laminate. Afterwards, the surface of the thermoplastic liquid crystal polymer film was sandblasted using a wet sandblasting device. Polygonal alumina with an average particle size of 14 μm was used as an abrasive, and a mixture with water was prepared at a concentration of 15% by mass of the abrasive, and sprayed using a wide-width sandblasting gun. The spraying pressure was set to 0.25 MPa. While sandblasting is being performed under the above conditions, the single-sided copper-clad laminate attached to the flat plate is transported at a transport speed of 50mm/s to perform sandblasting on the thermoplastic liquid crystal polymer film surface.

針對如上述般製作之實施例及比較例之熱塑性液晶聚合物薄膜、或單面覆銅積層板之熱塑性液晶聚合物薄膜側表面,藉由上述的方法而測定表面粗糙度。將此等之結果示於表7。其次,藉由下述的方法而將銅蒸鍍層形成於表面粗糙度經調整之熱塑性液晶聚合物薄膜面。The surface roughness of the thermoplastic liquid crystal polymer film of the embodiment and comparative example or the thermoplastic liquid crystal polymer film side surface of the single-sided copper-clad laminate prepared as described above was measured by the above method. The results are shown in Table 7. Next, a copper vapor-deposited layer was formed on the thermoplastic liquid crystal polymer film surface with adjusted surface roughness by the following method.

<銅蒸鍍層之形成> 其次,採用使用了真空蒸鍍裝置(Rock Giken Kogyo股份有限公司製,商品名:RVC-W-300)之卷對卷方式,將銅蒸鍍層(厚度:0.3μm)形成於熱塑性液晶聚合物薄膜、或單面覆銅積層板之熱塑性液晶聚合物薄膜側面。 <Formation of copper vapor-deposited layer> Next, a copper vapor-deposited layer (thickness: 0.3 μm) was formed on the thermoplastic liquid crystal polymer film or the thermoplastic liquid crystal polymer film side of the single-sided copper-clad laminate by a roll-to-roll method using a vacuum vapor deposition device (Rock Giken Kogyo Co., Ltd., trade name: RVC-W-300).

更具體而言,將熱塑性液晶聚合物薄膜、或單面覆銅積層板設置於裝載機側,將開放窗完全地關閉後,進行抽真空,與此同時將加熱輥(對於熱塑性液晶聚合物薄膜進行金屬之蒸鍍之輥)之溫度設為100℃。More specifically, a TLCP film or a single-sided copper-clad laminate is placed on the side of a loader, and after the opening window is completely closed, a vacuum is applied, and at the same time, the temperature of the heating roller (the roller for metal evaporation of the TLCP film) is set to 100°C.

其次,取出銅錠,以銅之總重量成為450g的方式添加銅粒。此外,其使用了對於銅粒進行藉由過硫酸鈉水所為之洗淨作為前處理之後以蒸餾水進行了洗淨而得者。Next, the copper ingot was taken out and copper particles were added so that the total weight of copper was 450 g. The copper particles were washed with sodium persulfate water as a pretreatment and then washed with distilled water.

其次,確認蒸鍍用腔室內的真空度成為7×10 -3Pa後,將加熱輥之設定溫度設為280℃。之後,使EMI(電子槍之發射電流值)之輸出上升,使銅熔融。另外,此時,以蒸鍍速度成為2.7nm/s的方式調整EMI輸出值。 Next, after confirming that the vacuum degree in the evaporation chamber has reached 7×10 -3 Pa, the set temperature of the heating roller is set to 280°C. After that, the output of EMI (emission current value of the electron gun) is increased to melt the copper. In addition, at this time, the EMI output value is adjusted so that the evaporation speed becomes 2.7nm/s.

其次,確認到加熱輥之溫度到達設定溫度(280℃),且蒸鍍用腔室內的真空度成為5×10 -3Pa以下後,在將單面覆銅積層板之搬運速度設定為0.5m/min之狀態,進行銅之蒸鍍處理,形成具有0.3μm的厚度之銅蒸鍍層。之後,將銅之厚度鍍敷至12μm。鍍敷液之成分為硫酸銅100g/L、硫酸50g/L、氯離子濃度30mg/L、及少量的添加劑。將鍍敷之電流密度設定為1A/dm 2,將溫度設定為10℃,進行電解鍍敷直到成為規定的厚度。 Next, after confirming that the temperature of the heating roller has reached the set temperature (280°C) and the vacuum in the evaporation chamber has become less than 5×10 -3 Pa, the copper evaporation treatment is carried out while the transport speed of the single-sided copper-clad laminate is set to 0.5m/min, forming a copper evaporation layer with a thickness of 0.3μm. After that, the copper is plated to a thickness of 12μm. The composition of the plating solution is 100g/L copper sulfate, 50g/L sulfuric acid, 30mg/L chlorine ion concentration, and a small amount of additives. The current density of the plating is set to 1A/dm 2 , and the temperature is set to 10°C, and electrolytic plating is carried out until the specified thickness is reached.

使用實施例、比較例所形成之銅蒸鍍層,利用上述的方法,評價剝離強度與傳輸特性。剝離強度係將0.7kN/m以上之情形評價為良好,傳輸特性在50GHz之情形係將-8dB/100mm以下之情形評價為「良好」,將-8dB/100mm以上之情形評價為「不良」。將此等之結果示於表7。The copper vapor-deposited layers formed by the embodiments and comparative examples were evaluated for peel strength and transmission characteristics using the above method. For peel strength, 0.7 kN/m or more was evaluated as good, and for transmission characteristics at 50 GHz, -8 dB/100 mm or less was evaluated as "good", and -8 dB/100 mm or more was evaluated as "poor". These results are shown in Table 7.

[表7] 表面粗糙度 蒸鍍鍍敷層之評價 Ssk (μm) Sa (μm) Sp (μm) Sz (μm) Sv (μm) Sku 剝離強度 傳輸特性 50GHz 特性之 兼顧 實施例1 -1.36 0.23 0.62 2.50 1.88 2.68 0.7 良好 實施例2 -0.48 0.30 0.86 2.02 1.16 2.69 0.9 良好 實施例3 -0.22 0.47 2.35 4.60 2.25 3.06 0.8 良好 實施例4 -4.45 0.18 0.58 3.78 3.20 38.37 0.9 良好 比較例1 0.27 0.09 1.04 1.50 0.46 4.53 0.4 良好 × 比較例2 0.32 0.28 1.77 3.21 1.44 3.37 0.4 良好 × 比較例3 1.20 0.10 1.66 2.10 0.44 10.02 0.8 不良 × 比較例4 0.42 0.12 1.45 1.92 0.47 5.04 1.2 不良 × 比較例5 0.45 0.63 3.43 4.54 1.02 4.69 1.6 不良 × [Table 7] Surface roughness Evaluation of Evaporation Coating Ssk (μm) Sa (μm) Sp (μm) Sz (μm) Sv (μm) Sku Peel strength Transmission characteristics 50GHz Characteristics Embodiment 1 -1.36 0.23 0.62 2.50 1.88 2.68 0.7 good Embodiment 2 -0.48 0.30 0.86 2.02 1.16 2.69 0.9 good Embodiment 3 -0.22 0.47 2.35 4.60 2.25 3.06 0.8 good Embodiment 4 -4.45 0.18 0.58 3.78 3.20 38.37 0.9 good Comparison Example 1 0.27 0.09 1.04 1.50 0.46 4.53 0.4 good × Comparison Example 2 0.32 0.28 1.77 3.21 1.44 3.37 0.4 good × Comparison Example 3 1.20 0.10 1.66 2.10 0.44 10.02 0.8 bad × Comparison Example 4 0.42 0.12 1.45 1.92 0.47 5.04 1.2 bad × Comparison Example 5 0.45 0.63 3.43 4.54 1.02 4.69 1.6 bad ×

如表所示,偏斜度Ssk及算術平均粗糙度Sa在本發明之範圍的實施例1~4,其剝離強度、傳輸特性皆顯示良好的結果。相對於此,比較例1、2,則由於熱塑性液晶聚合物薄膜與金屬層之界面為平坦,因此雖然傳輸特性良好,但剝離強度低;而施加了與本發明之範圍不同的表面粗化之比較例3、4、5,則雖然剝離強度高,但傳輸特性降低。 [產業上之可利用性] As shown in the table, the peeling strength and transmission characteristics of Examples 1 to 4, where the skewness Ssk and the arithmetic mean roughness Sa are within the scope of the present invention, show good results. In contrast, in Comparative Examples 1 and 2, since the interface between the thermoplastic liquid crystal polymer film and the metal layer is flat, although the transmission characteristics are good, the peeling strength is low; and in Comparative Examples 3, 4, and 5, which are subjected to surface roughening different from the scope of the present invention, although the peeling strength is high, the transmission characteristics are reduced. [Industrial Applicability]

本發明之熱塑性液晶聚合物薄膜適合藉由半加成法來形成細微的電路,可兼顧剝離強度與傳輸特性。因此,在可撓性電路基板等用途之利用性高。The thermoplastic liquid crystal polymer film of the present invention is suitable for forming fine circuits by semi-additive method, and can take into account both peel strength and transmission characteristics. Therefore, it is highly applicable in applications such as flexible circuit substrates.

如上述般說明了本發明之理想的實施例,但只要是本發明所屬技術領域中具有通常知識者,則應可在看過本說明書後,在顯而易知的範圍內輕易地思及各種變更及修正。 因此,這樣的變更及修正係被解釋為由申請專利範圍所定之發明的範圍內。 As described above, the ideal embodiment of the present invention is described. However, anyone with ordinary knowledge in the technical field to which the present invention belongs should be able to easily think of various changes and modifications within the obvious scope after reading this specification. Therefore, such changes and modifications are interpreted as being within the scope of the invention defined by the scope of the patent application.

without

without

無。without.

Claims (14)

一種熱塑性液晶聚合物薄膜,其係包含可形成光學上各向異性的熔融相之聚合物(以下稱為熱塑性液晶聚合物)之熱塑性液晶聚合物薄膜,其在至少一表面中,偏斜度(偏度)Ssk為-5以上0以下,且該表面之算術平均粗糙度Sa為0.15μm以上。A thermoplastic liquid crystal polymer film, which is a thermoplastic liquid crystal polymer film comprising a polymer that can form an optically anisotropic melt phase (hereinafter referred to as a thermoplastic liquid crystal polymer), wherein in at least one surface, the skewness (skewness) Ssk is greater than -5 and less than 0, and the arithmetic average roughness Sa of the surface is greater than 0.15μm. 如請求項1之熱塑性液晶聚合物薄膜,其中該表面為無金屬。A thermoplastic liquid crystal polymer film as claimed in claim 1, wherein the surface is metal-free. 如請求項1或2之熱塑性液晶聚合物薄膜,其中該表面之算術平均粗糙度Sa為0.5μm以下。A thermoplastic liquid crystal polymer film as claimed in claim 1 or 2, wherein the arithmetic mean roughness Sa of the surface is less than 0.5 μm. 如請求項1或2之熱塑性液晶聚合物薄膜,其中該表面之最大峰高Sp為0.15μm以上3.00μm以下。A thermoplastic liquid crystal polymer film as claimed in claim 1 or 2, wherein the maximum peak height Sp of the surface is greater than 0.15 μm and less than 3.00 μm. 如請求項1或2之熱塑性液晶聚合物薄膜,其中該表面之最大谷深Sv為0.2μm以上3.5μm以下。A thermoplastic liquid crystal polymer film as claimed in claim 1 or 2, wherein the maximum valley depth Sv of the surface is greater than 0.2 μm and less than 3.5 μm. 如請求項1或2之熱塑性液晶聚合物薄膜,其中該表面之最大高度Sz為1.5μm以上5.0μm以下。A thermoplastic liquid crystal polymer film as claimed in claim 1 or 2, wherein the maximum height Sz of the surface is greater than 1.5 μm and less than 5.0 μm. 如請求項1或2之熱塑性液晶聚合物薄膜,其中熔點為315℃以上。The thermoplastic liquid crystal polymer film of claim 1 or 2, wherein the melting point is above 315°C. 一種積層體,其包含如請求項1或2之熱塑性液晶聚合物薄膜、與積層於該熱塑性液晶聚合物薄膜之導電層。A laminate comprising the thermoplastic liquid crystal polymer film of claim 1 or 2, and a conductive layer laminated on the thermoplastic liquid crystal polymer film. 如請求項8之積層體,其中於該熱塑性液晶聚合物薄膜之該表面上,形成了以選自由導電性印墨、金屬皮膜、及由此等所形成之電路組成之群組的至少一種所構成之層作為導電層。A laminate as claimed in claim 8, wherein a conductive layer is formed on the surface of the thermoplastic liquid crystal polymer film and a layer consisting of at least one selected from the group consisting of conductive ink, metal film, and circuits formed thereby. 如請求項9之積層體,其中於與該熱塑性液晶聚合物薄膜之該表面相反側的表面上,形成了金屬箔層作為導電層。A laminate as claimed in claim 9, wherein a metal foil layer is formed as a conductive layer on the surface opposite to the surface of the thermoplastic liquid crystal polymer film. 如請求項8之積層體,其為電路基板。The multilayer structure of claim 8 is a circuit substrate. 一種如請求項1或2之熱塑性液晶聚合物薄膜之製造方法,其至少具備:使粗化表面輥接觸熱塑性液晶聚合物薄膜之至少一表面之步驟。A method for manufacturing a thermoplastic liquid crystal polymer film as claimed in claim 1 or 2, which comprises at least the step of bringing a roughened surface roller into contact with at least one surface of the thermoplastic liquid crystal polymer film. 一種如請求項8之積層體之製造方法,其至少具備:使粗化表面輥接觸熱塑性液晶聚合物薄膜與支撐體之積層體之熱塑性液晶聚合物薄膜表面之步驟。A method for manufacturing a laminate as claimed in claim 8, which comprises at least the step of bringing a roughened surface roller into contact with a surface of a thermoplastic liquid crystal polymer film of a laminate of a thermoplastic liquid crystal polymer film and a support. 如請求項13之積層體之製造方法,其中支撐體為金屬箔。A method for manufacturing a laminate as claimed in claim 13, wherein the support is a metal foil.
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