TW202442944A - Methods of reducing or eliminating deposits in an electroplating system - Google Patents
Methods of reducing or eliminating deposits in an electroplating system Download PDFInfo
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- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
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- C25D21/00—Processes for servicing or operating cells for electrolytic coating
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- C25D21/14—Controlled addition of electrolyte components
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- C25D21/00—Processes for servicing or operating cells for electrolytic coating
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Abstract
Description
本技術係有關於減少或消除電化學電鍍之前、電化學電鍍期間與電化學電鍍之後的沉澱物或沉積物。更具體地,本技術係有關於使用具有預設pH值的補充劑以減少電鍍系統的各種表面上或電鍍浴中的不溶性(insoluble)沉積物,例如向上電鍍(plate-up)或沉澱物,的方法。The present technology relates to reducing or eliminating deposits or precipitates before, during and after electrochemical plating. More specifically, the present technology relates to methods of using a supplement having a preset pH value to reduce insoluble deposits, such as plate-up or precipitates, on various surfaces of a plating system or in a plating bath.
在多個基板表面上產生多個複雜圖案化材料層之製程使積體電路成為可能。在形成、蝕刻與基板上的其他製程之後,通常會沉積或形成金屬或其他導電材料以提供多個元件之間的電性連接。因為此金屬化可能進行於許多製造操作步驟之後,所以在金屬化期間發生的問題可能產生昂貴的廢棄基板或晶圓。Integrated circuits are made possible by processes that create multiple layers of complex patterned materials on multiple substrate surfaces. After formation, etching, and other processing on the substrate, metal or other conductive material is typically deposited or formed to provide electrical connections between the multiple components. Because this metallization may occur after many manufacturing operations, problems during metallization can result in expensive scrap substrates or wafers.
通常藉由在鍍覆腔室中,例如電鍍腔室中,進行電化學電鍍以將金屬層施加於晶圓上。典型的鍍覆腔室包含用以固持電解質或電鍍液的容器、在容器中且接觸電鍍液的一或更多的陽極、以及具有接觸環(contact ring)的頭部,接觸環具有接觸基板的多個電接觸指狀物(electrical contact fingers)。工件的導電表面浸入電鍍液(例如液態電解質浴)中,且電接觸使電鍍液中的金屬離子鍍在基板上,形成金屬層或膜。通常在外殼內提供多個電鍍處理器以及其他類型的處理器以形成鍍覆系統,例如電鍍系統。The metal layer is typically applied to the wafer by electrochemical plating in a plating chamber, such as an electroplating chamber. A typical plating chamber includes a container for holding an electrolyte or plating solution, one or more anodes in the container and in contact with the plating solution, and a head with a contact ring having a plurality of electrical contact fingers that contact the substrate. The conductive surface of the workpiece is immersed in the plating solution (such as a liquid electrolyte bath), and the electrical contact causes the metal ions in the plating solution to plate on the substrate to form a metal layer or film. Multiple plating processors and other types of processors are typically provided within a housing to form a plating system, such as an electroplating system.
在電鍍浴元件及/或接觸環上的電接點上形成向上電鍍的不溶性沉積物需要經常清潔及/或除鍍維護。此外,在電鍍浴內或電鍍浴元件上的堆積通常會達到不溶性沉積物非常可觀的程度以至於必須更換電鍍浴本身。The formation of insoluble deposits that plate upward on the electrical contacts on the plating bath components and/or contact rings requires frequent cleaning and/or deplating maintenance. In addition, the buildup of insoluble deposits in the plating bath or on the plating bath components often reaches such an extent that the plating bath itself must be replaced.
從而,有需要避免電鍍浴中或電鍍浴表面與元件上的不溶性沉積物之方法。本技術可滿足這些需求與其他需求。Thus, there is a need for methods of avoiding insoluble deposits in the plating bath or on the surface of the plating bath and on components. The present technology can meet these needs and other needs.
本技術的多個實施例包含減少沉澱物形成於電鍍浴中、或不溶性沉積物形成於電鍍系統中或其表面上的方法。方法的多個實施例包含將電鍍浴中具有第一pH值的電鍍液的體積從第一體積減少為第二體積。多個實施例包含在電鍍液中添加補充劑(replenishment agent)以使電鍍液的體積從第二體積增加為第一體積,其中該補充劑具有一第二pH值,該第二pH值與該第一pH值相差小於5或約5。Various embodiments of the present technology include methods of reducing deposit formation in a plating bath, or insoluble deposit formation in or on a surface of a plating system. Various embodiments of the methods include reducing the volume of a plating solution having a first pH value in a plating bath from the first volume to a second volume. Various embodiments include adding a replenishment agent to the plating solution to increase the volume of the plating solution from the second volume to the first volume, wherein the replenishment agent has a second pH value that differs from the first pH value by less than or about 5.
在多個實施例中,添加補充劑之後電鍍液的第一pH值變化小於3或約3。在另外的實施例中,電鍍液更包含金屬離子、有機金屬粒子、有機粒子、或其組合。在更多的實施例中,添加補充劑之後少於約10 wt.%的金屬離子、有機金屬粒子、有機粒子、或其組合的從電鍍液中沉澱出來。在另外的實施例中,減少體積包含蒸發一部分的電鍍液。多個實施例包含電鍍液具有第一電解質濃度與添加補充劑之後的第二電解質濃度,其中第一電解質濃度與第二電解質濃度相差10 wt.%或小於10 wt.%。In various embodiments, the first pH of the plating solution changes by less than or about 3 after the addition of the supplement. In other embodiments, the plating solution further comprises metal ions, organometallic particles, organic particles, or a combination thereof. In more embodiments, less than about 10 wt.% of the metal ions, organometallic particles, organic particles, or a combination thereof precipitates from the plating solution after the addition of the supplement. In other embodiments, reducing the volume comprises evaporating a portion of the plating solution. Various embodiments comprise the plating solution having a first electrolyte concentration and a second electrolyte concentration after the addition of the supplement, wherein the first electrolyte concentration differs from the second electrolyte concentration by 10 wt.% or less.
附加地或替代地,多個實施例包含第一pH值為約0至約5,且第二pH值為約0至約5。另外的實施例包含第一pH值為約8至約12,且第二pH值為約8至約12。在多個實施例中,第二pH值與第一pH值相差小於1.5或約1.5。在更多的實施例中,第二pH值與第一pH值相差小於3或約3。Additionally or alternatively, various embodiments include a first pH value of about 0 to about 5, and a second pH value of about 0 to about 5. Further embodiments include a first pH value of about 8 to about 12, and a second pH value of about 8 to about 12. In various embodiments, the second pH value differs from the first pH value by less than or about 1.5. In more embodiments, the second pH value differs from the first pH value by less than or about 3.
在多個實施例中,補充劑係為無機酸、碳酸、陰極水(cathode water)、陽極水(anode water)、或其組合。多個實施例包含補充劑的pH值小於3。In various embodiments, the supplement is an inorganic acid, carbonic acid, cathode water, anode water, or a combination thereof. Various embodiments include a pH value of the supplement less than 3.
本技術的多個實施例包含減少不溶性沉積物形成於電鍍系統中或其表面上的方法。多個實施例包含減少電鍍浴中具有第一pH值的電鍍液的體積。多個實施例包含將補充劑調節為具有第二pH值,其中第二pH值與第一pH值相差小於3或約3。在多個實施例中,補充劑包含碳酸、電解水(electrolyzed water)、或其組合。在多個實施例中,補充劑大致上不含無機酸。Various embodiments of the present technology include methods of reducing the formation of insoluble deposits in or on a surface of an electroplating system. Various embodiments include reducing the volume of a plating solution having a first pH in a plating bath. Various embodiments include adjusting a supplement to have a second pH, wherein the second pH differs from the first pH by less than 3 or about 3. In various embodiments, the supplement includes carbonic acid, electrolyzed water, or a combination thereof. In various embodiments, the supplement is substantially free of an inorganic acid.
本技術的多個實施例包含減少不溶性沉積物形成於電鍍系統中或其表面上的方法。多個實施例包含電鍍系統,電鍍系統包含含有電鍍液的電鍍浴、包含密封件的頭部、耦接密封件的基板、及電鍍浴供應器。多個實施例包含將頭部從第一位置移至第二位置,其中在第二位置時密封件與基板配置於電鍍液中。多個實施例包含使基板接觸一或更多的不溶性離子。多個實施例包含在電鍍液中添加補充劑。在多個實施例中,補充劑具有第二pH值,其中第二pH值與第一pH值相差小於5或約5。Various embodiments of the present technology include methods for reducing the formation of insoluble deposits in or on a surface of a plating system. Various embodiments include a plating system, the plating system including a plating bath containing a plating solution, a head including a seal, a substrate coupled to the seal, and a plating bath supply. Various embodiments include moving the head from a first position to a second position, wherein the seal and the substrate are disposed in the plating solution in the second position. Various embodiments include exposing the substrate to one or more insoluble ions. Various embodiments include adding a supplemental agent to the plating solution. In various embodiments, the supplemental agent has a second pH value, wherein the second pH value differs from the first pH value by less than or about 5.
在多個實施例中,電鍍系統亦包含電鍍液調節系統。在更多的實施例中,方法包含將補充劑調節為具有第二pH值。在另外的實施例中,調節包含選擇酸、調整酸濃度、添加酸化劑(acidifying agent)、添加鹼化劑(alkalization agent)、或其組合。In various embodiments, the electroplating system also includes an electroplating solution conditioning system. In more embodiments, the method includes adjusting the supplement to have a second pH value. In other embodiments, the conditioning includes selecting an acid, adjusting the acid concentration, adding an acidifying agent, adding an alkalization agent, or a combination thereof.
此技術可提供優於傳統技術的許多益處。例如,本技術的多個實施例減少或甚至消除在電鍍系統表面上或其中的元件上之向上電鍍。此外,本技術可使用不改變現有的電鍍浴溶質濃度之補充劑。因此本技術可提供減少或消除不溶性堆積的方法,以大幅延長電鍍系統的壽命。結合以下敘述與附圖以更詳細描述這些與其他實施例,以及其許多益處與特徵。This technology can provide many benefits over conventional techniques. For example, various embodiments of the technology reduce or even eliminate up-plating on surfaces of or components in a plating system. In addition, the technology can use supplements that do not change the existing plating bath solute concentration. Thus, the technology can provide a method to reduce or eliminate insoluble buildup to significantly extend the life of the plating system. These and other embodiments, as well as their many benefits and features, are described in more detail in conjunction with the following description and accompanying drawings.
現有的電鍍系統顯示出電鍍液液體體積損耗,例如由於蒸發、溢出等。傳統的系統使用去離子水來維持電鍍液體積。然而,去離子水有問題地導致不溶性汙染物形成於電鍍浴中,例如有機金屬、金屬等,汙染物在電鍍浴內或在電鍍浴表面和元件上沉澱、向上電鍍、或形成汙垢,元件包含密封件,密封件用以使元件和輸入與輸出管線及基板支撐頭部分開且用以維持電鍍液遠離電接點。沉澱包含不溶性固體及/或其前驅物,其可作為汙垢沉積於處理設備上。例如,向上電鍍可由電鍍液中的各種金屬與有機前驅物所形成。系統元件上的向上電鍍亦有問題地導致元件與接點之間形成導電路徑,從而導致接點電鍍多於所需基板電鍍,並導致密封件和接點故障。Existing electroplating systems show loss of plating liquid volume, for example due to evaporation, overflow, etc. Conventional systems use deionized water to maintain the plating liquid volume. However, deionized water problematically causes insoluble contaminants to form in the plating bath, such as organometallics, metals, etc., which deposit, plate upward, or form scale in the plating bath or on the bath surfaces and components, including seals that separate the components from input and output lines and substrate support heads and that maintain the plating liquid away from electrical contacts. The deposits contain insoluble solids and/or their precursors, which can be deposited as scale on processing equipment. For example, up-plating can be caused by various metals and organic precursors in the plating solution. Up-plating on system components can also problematically result in the formation of a conductive path between the component and the contact, which can cause more contact plating than the required substrate plating and lead to seal and contact failure.
移除不溶性沉積物(例如向上電鍍)的傳統方法著重於旨在移除形成於電鍍系統表面及其上之元件上的不溶性沉積物的移除化學品或物理機制。例如,物理機制可包含使用刷子、聚合物墊或相似裝置以物理性地接觸系統或其元件以移除一些汙染物。或者,移除化學品可包含清潔劑,例如硝酸、其他酸、氫氧化鈉、氫氧化鉀或其他強鹼。不幸地,此種物理的與化學的傳統機制需要移除或拆卸電鍍浴,或者移除電鍍液,且通常不能移除所有存在的向上電鍍。此種低效率移除導致頻繁更換,因為任意殘留的不溶性沉積物在重新使用時都會提升未來沉積物的發生速度與量。Traditional methods of removing insoluble deposits, such as plating-up, focus on removal chemicals or physical mechanisms designed to remove insoluble deposits formed on the surfaces of the plating system and components thereon. For example, a physical mechanism may include the use of a brush, polymer pad, or similar device to physically contact the system or its components to remove some of the contaminants. Alternatively, the removal chemical may include a cleaning agent such as nitric acid, other acids, sodium hydroxide, potassium hydroxide, or other strong bases. Unfortunately, such physical and chemical traditional mechanisms require the removal or disassembly of the plating bath, or the removal of the plating solution, and generally fail to remove all of the plating-up present. Such inefficient removal results in frequent replacement, as any remaining insoluble deposits increase the rate and amount of future deposits when reused.
本技術發現,使用具有預設pH值的補充劑可減少不溶性沉積物或甚至可避免不溶性沉積物形成,從而消除大量清潔處理之必要性。本技術發現,電鍍浴pH值與補充劑pH值之巨大差異會增加電鍍系統元件或其表面上的不溶性材料之沉積。也就是說,由於加入補充劑造成pH值改變,在稀釋之前溶解於電鍍液之pH值的有機粒子、金屬粒子與離子、及有機金屬粒子會被迫從溶液中沉澱出來,並附著於任何可用的表面。當發生單次時,不溶性沉積物幾乎可忽略。但是,在以低電鍍浴體積接著使用具有較高或較低pH值的補充劑之順序重複循環的表面上,每一循環可產生不溶性沉積物,這些沉積物會隨著循環進行而累積。最終沉積物可形成作為向上電鍍的前驅物之導電或半導電膜。一旦導電路徑形成於電子源(例如電力供應)與前驅物膜之間,就會發生向上電鍍。從而,本技術發現,即便在沒有清潔的實施例中,小心控制補充劑的pH值可避免最初的不溶性材料沉澱與沉積而可減少或消除向上電鍍。The present technology has found that the use of a supplement with a preset pH value can reduce or even avoid the formation of insoluble deposits, thereby eliminating the need for extensive cleaning treatments. The present technology has found that a large difference between the pH of the plating bath and the pH of the supplement can increase the deposition of insoluble materials on the components of the plating system or on its surface. That is, due to the pH change caused by the addition of the supplement, organic particles, metal particles and ions, and organometallic particles that were dissolved in the pH of the plating solution before dilution are forced to precipitate out of solution and attach to any available surface. When it occurs a single time, the insoluble deposits are almost negligible. However, on surfaces that are repeatedly cycled with a low plating bath volume followed by a supplement with a higher or lower pH, each cycle can produce an insoluble deposit that accumulates as the cycles proceed. The final deposit can form a conductive or semiconductive film that serves as a precursor for upward plating. Once a conductive path is formed between the electron source (e.g., power supply) and the precursor film, upward plating occurs. Thus, the present technology has discovered that even in embodiments without cleaning, careful control of the pH of the supplement can reduce or eliminate upward plating by avoiding initial precipitation and deposition of insoluble materials.
本揭露注意到避免沉積物或向上電鍍可有益地維持電鍍設備包含接點或密封環的壽命同時排除用以清潔之預訂停機時間。例如,提供具有預設pH值的補充劑可省略密封環及/或接觸環上的電接點上的清潔及/或除鍍維護,補充劑的pH值與電鍍液的pH值相差小於5或約5。藉由避免形成沉積來避免或減少移除不溶性沉積物之需求,電鍍系統的產量或使用效率得以提升,因為電鍍系統不需要在清潔步驟期間閒置。本揭露注意到,提供pH值相似於電鍍液或電解質的pH值的補充劑,可避免或減少累積在電鍍系統內的表面上或者促進不溶性沉積物形成在電鍍系統內的表面上的汙染物或有問題物質之沉澱,因為汙染物或有問題物質仍然可溶而不是從溶液中沉澱出來。例如,由於不溶性材料仍然是溶液中的溶質或可溶性材料,所以可藉由過濾或分離處理輕易地將不溶性材料從設備或處理系統中移除。The present disclosure notes that avoiding deposits or up-plating can beneficially maintain the life of the plating equipment including contacts or sealing rings while eliminating scheduled downtime for cleaning. For example, providing a supplement having a preset pH value that differs from the pH of the plating solution by less than 5 or about 5 can eliminate the need for cleaning and/or deplating maintenance on the sealing rings and/or electrical contacts on the contact rings. By avoiding or reducing the need to remove insoluble deposits by avoiding the formation of deposits, the throughput or efficiency of use of the plating system is increased because the plating system does not need to be idle during the cleaning step. The present disclosure notes that providing a supplement having a pH similar to the pH of the plating solution or electrolyte can avoid or reduce the deposition of contaminants or problematic materials that accumulate on surfaces within the plating system or promote the formation of insoluble deposits on surfaces within the plating system because the contaminants or problematic materials remain soluble rather than precipitating out of solution. For example, since the insoluble material remains a solute or soluble material in solution, the insoluble material can be easily removed from the equipment or processing system by filtration or separation.
例如,在多個實施例中,每次沖洗/補充循環或在電鍍浴之壽命期間,基於在添加補充劑之前電鍍液中存在的金屬離子、金屬粒子、有機金屬粒子、有機粒子、或其組合的重量,在添加此處討論的補充劑之後少於20 wt.%或約20 wt.%的金屬離子、金屬粒子、有機金屬粒子、有機粒子、或其組合從電鍍液中沉澱出來,例如少於15 wt.%或約15 wt.%,例如少於10 wt.%或約10 wt.%,例如少於7.5 wt.%或約7.5 wt.%,例如少於5 wt.%或約5 wt.%,例如少於2.5 wt.%或約2.5 wt.%,例如少於1 wt.%或約1 wt.%,或其間的任意範圍或數值。For example, in various embodiments, less than 20 wt.% or about 20 wt.% of the metal ions, metal particles, organometallic particles, organic particles, or combinations thereof are precipitated from the plating solution after adding the supplements discussed herein, based on the weight of the metal ions, metal particles, organometallic particles, organic particles, or combinations thereof present in the plating solution before the supplements are added, such as less than 15 wt.% or about 15 wt.%, such as less than 10 wt.% or about 10 wt.%, such as less than 7.5 wt.% or about 7.5 wt.%, such as less than 5 wt.% or about 5 wt.%, such as less than 2.5 wt.% or about 2.5 wt.%, based on the weight of the metal ions, metal particles, organometallic particles, organic particles, or combinations thereof present in the plating solution before the supplements are added, during each rinse/replenishment cycle or during the life of the plating bath. wt.%, such as less than 1 wt.% or about 1 wt.%, or any range or value therebetween.
然而,第1圖係繪示根據本技術之多個實施例之可進行多種電鍍方法的電鍍系統100的示意透視圖。可操作電鍍系統100以進行電鍍操作與化學鍍(electroless plating)操作。在電鍍操作中,電鍍系統100將電流傳送至基板,以使接觸基板的電鍍浴中的離子可被還原且鍍在基板上。在化學鍍操作中,電鍍系統100不會將電流傳送至基板。作為替代,電鍍仰賴電鍍浴中的離子接觸基板表面時離子之自發性還原,基板表面包含標準電極電位(standard electrode potential; )低於電鍍浴中的離子之材料。電鍍系統100係繪示示例性電鍍系統,其包含系統頭部110與碗槽(bowl) 115。在電鍍操作期間,基板可被夾持於系統頭部110、倒置、及延伸至碗槽115中以進行電鍍操作。電鍍系統100可包含頭部升降件120,其可裝配以升起與旋轉系統頭部110,或者以其他方式使頭部定位於系統中,包含傾斜操作。頭部與碗槽可附接於平台板125或其他結構,其他結構可為包含多個電鍍系統100的更大系統的一部分,多個電鍍系統100可共用電解質與其他材料。轉子(rotor)可在不同操作中使夾持於頭部的基板在碗槽內旋轉或在碗槽外旋轉。轉子可包含接觸環,其可提供與基板的導電接觸。以下進一步討論的密封件130可連接頭部。密封件130可包含被待處理的固持(chucked)晶圓。 However, FIG. 1 is a schematic perspective view of a plating system 100 that can perform a variety of plating methods according to various embodiments of the present technology. The plating system 100 can be operated to perform both plating operations and electroless plating operations. In a plating operation, the plating system 100 delivers an electric current to a substrate so that ions in a plating bath that contact the substrate can be reduced and plated on the substrate. In a electroless plating operation, the plating system 100 does not deliver an electric current to the substrate. Instead, plating relies on the spontaneous reduction of ions in a plating bath when they contact a substrate surface, which comprises a standard electrode potential (standard electrode potential; ) is lower than the ions in the plating bath. Plating system 100 illustrates an exemplary plating system that includes a system head 110 and a bowl 115. During a plating operation, a substrate can be clamped to the system head 110, inverted, and extended into the bowl 115 for plating operations. The plating system 100 can include a head lift 120 that can be configured to raise and rotate the system head 110, or otherwise position the head in the system, including tilting operations. The head and bowl can be attached to a platform plate 125 or other structure that can be part of a larger system that includes multiple plating systems 100 that can share electrolytes and other materials. The rotor may rotate the substrate held in the head within the bowl or outside the bowl in different operations. The rotor may include a contact ring that provides conductive contact with the substrate. A seal 130, discussed further below, may be connected to the head. The seal 130 may include a chucked wafer to be processed.
第1圖繪示電鍍系統100,其可包含要直接在平台上清潔的多個元件。在多個實施例中,電鍍系統100更包含用於元件清潔的原位( in situ)沖洗系統135。在另外的實施例(未繪示)中,電鍍系統可裝配為具有一平台,在此平台上,頭部可移動至進行密封件或其他元件清潔的附加模組。 FIG. 1 shows a plating system 100 that may include multiple components to be cleaned directly on the platform. In various embodiments, the plating system 100 further includes an in situ flushing system 135 for component cleaning. In other embodiments (not shown), the plating system may be configured to have a platform on which the head may be moved to an additional module for cleaning seals or other components.
第2圖係繪示根據本技術之一些實施例之包含電鍍設備200的電鍍腔室的局部剖面圖。電鍍設備200可和電鍍系統合併,包含前述的電鍍系統100。第2圖示出電鍍系統之電鍍浴205以及頭部210,電鍍浴205含有電鍍液207(例如液態電解質浴),基板215耦接於頭部。入口供應(inlet supply) 212(更清楚繪示於第3圖,312)可提供電介質與將要沉積在基板表面上的金屬離子源,還可提供如此處討論的補充劑。將要鍍在基板上的金屬以將要沉積在基板上的金屬離子的形式存在於電鍍液中。在一些實施例中,金屬離子沉積於金屬離子相較於周圍場域表面優先沉積於凹陷特徵內之製程條件下。在一些實施例中,頭部210可移動至晶圓基板215接觸電鍍浴205中的電鍍液207(例如液態電解質浴)之位置。電鍍設備亦可包含電鍍浴回流管214。FIG. 2 is a partial cross-sectional view of a plating chamber including a plating apparatus 200 according to some embodiments of the present technology. The plating apparatus 200 can be incorporated into a plating system, including the plating system 100 described above. FIG. 2 shows a plating bath 205 and a head 210 of the plating system, the plating bath 205 containing a plating solution 207 (e.g., a liquid electrolyte bath), and a substrate 215 coupled to the head. An inlet supply 212 (more clearly shown in FIG. 3, 312) can provide a dielectric and a source of metal ions to be deposited on the surface of the substrate, and can also provide a supplementary agent as discussed herein. The metal to be plated on the substrate is present in the plating solution in the form of metal ions to be deposited on the substrate. In some embodiments, metal ions are deposited under process conditions where the metal ions are preferentially deposited in the recessed features relative to the surrounding field surface. In some embodiments, the head 210 can be moved to a position where the wafer substrate 215 contacts the plating solution 207 (e.g., a liquid electrolyte bath) in the plating bath 205. The plating apparatus can also include a plating bath return line 214.
在所繪示的實施例中,基板耦接密封件216,密封件216結合於頭部210上。沖洗框(rinsing frame) 220可耦接於電鍍浴205上方且可裝配以在電鍍期間將頭部210接收至容器中。沖洗框220可包含環狀地延伸於電鍍浴205之上表面的邊緣225。沖洗通道(rinsing channel) 227可被定義於邊緣225與電鍍浴205之上表面之間。例如,邊緣225可包含在內部且具有傾斜輪廓的側壁230。如上所述,從基板甩出的沖洗流體可接觸側壁230且可被氣室(plenum) 235接收,氣室235繞著邊緣延伸以收集來自電鍍設備200的沖洗流體。In the illustrated embodiment, the substrate is coupled to a seal 216 that is bonded to the header 210. A rinsing frame 220 may be coupled above the plating bath 205 and may be configured to receive the header 210 into a container during plating. The rinsing frame 220 may include a rim 225 that extends annularly over the upper surface of the plating bath 205. A rinsing channel 227 may be defined between the rim 225 and the upper surface of the plating bath 205. For example, the rim 225 may include a sidewall 230 having an inclined profile on the inside. As described above, rinsing fluid ejected from the substrate may contact the sidewall 230 and may be received by a plenum 235 that extends around the edge to collect rinsing fluid from the electroplating apparatus 200.
在一些實施例中,電鍍設備200可額外包含一或更多的清潔元件。清潔元件可包含一或更多的噴嘴,用以將流體傳送到基板215或頭部210,或用以朝著基板215或頭部210傳送流體。第2圖繪示出多種實施例中的一者,在此實施例中,改良的沖洗組件(rinse assemblies)可用以在沖洗操作期間保護電鍍浴與基板。在另外的實施例中,側面清潔噴嘴250可以延伸穿過沖洗框220的邊緣225且被引導至沖洗密封件216以及基板215的多個方面。In some embodiments, the plating apparatus 200 may additionally include one or more cleaning elements. The cleaning elements may include one or more nozzles for delivering fluid to or toward the substrate 215 or the head 210. FIG. 2 illustrates one of a variety of embodiments in which improved rinse assemblies may be used to protect the plating bath and substrate during the rinse operation. In other embodiments, the side cleaning nozzles 250 may extend through the edge 225 of the rinse frame 220 and be directed to rinse the seal 216 and various aspects of the substrate 215.
第3圖係繪示電鍍液調節系統300的示意圖。電鍍液調節系統300將電解質與電鍍處理期間產生的成分(constituent),此處被稱為成分,還有補充劑,提供給用於電鍍處理的電鍍系統。電鍍液調節系統300通常包含供應槽302、調節模組303、過濾模組305、化學分析儀模組316、以及電鍍浴廢棄物處理系統322,電鍍浴廢棄物處理系統322藉由出口管321連接化學分析儀模組316。一或更多的控制器310、311和319控制供應槽302中的電解質的組成與成分,並且控制電鍍液調節系統300之操作。優選地,多個控制器可獨立操作,但整合於電鍍系統100的控制系統318。FIG. 3 is a schematic diagram of a plating solution conditioning system 300. The plating solution conditioning system 300 provides electrolyte and components (constituents) generated during the plating process, referred to herein as components, and supplementary agents to the plating system for the plating process. The plating solution conditioning system 300 generally includes a supply tank 302, a conditioning module 303, a filter module 305, a chemical analyzer module 316, and a plating bath waste treatment system 322, and the plating bath waste treatment system 322 is connected to the chemical analyzer module 316 via an outlet pipe 321. One or more controllers 310, 311 and 319 control the composition and ingredients of the electrolyte in the supply tank 302 and control the operation of the plating solution conditioning system 300. Preferably, the multiple controllers can operate independently but are integrated into the control system 318 of the plating system 100.
供應槽302提供用於電解質與成分的儲存槽,其包含供應管312,供應管312通過一或更多的流體幫浦308與閥門307連接至多個電鍍處理槽的每一者。配置為熱連接供應槽302的熱交換器324或加熱器/冷卻器控制儲存於供應槽302中的電解質與成分的溫度。熱交換器324連接控制器310且由控制器310操作。The supply tank 302 provides a storage tank for electrolyte and components and includes a supply pipe 312 connected to each of a plurality of electroplating process tanks through one or more fluid pumps 308 and valves 307. A heat exchanger 324 or heater/cooler configured to be thermally connected to the supply tank 302 controls the temperature of the electrolyte and components stored in the supply tank 302. The heat exchanger 324 is connected to the controller 310 and is operated by the controller 310.
調節模組303藉由供應管連接供應槽302且包含複數個源槽(source tank) 306、330或進料瓶(feed bottle)、複數個閥門309、307、以及控制器311。源槽306含有組成電解質與成分所需的化學物質,且典型地包含去離子水源槽與硫酸銅(CuSO 4)源槽以組成電解質。源槽330含有補充劑且可因此被稱為補充劑槽330。調節模組303之補充劑槽330優選地透過閥門331來調節且被控制器311控制。其他源槽306可含有硫酸(H 2SO 4)、氯化氫(HCl)與各種添加劑,例如乙二醇或二氧化碳。 The regulating module 303 is connected to the supply tank 302 by a supply pipe and includes a plurality of source tanks 306, 330 or feed bottles, a plurality of valves 309, 307, and a controller 311. The source tank 306 contains the chemicals required to form the electrolyte and components, and typically includes a deionized water source tank and a copper sulfate ( CuSO4 ) source tank to form the electrolyte. The source tank 330 contains a supplementary agent and can therefore be referred to as a supplementary agent tank 330. The supplementary agent tank 330 of the regulating module 303 is preferably regulated by a valve 331 and controlled by the controller 311. Other source tanks 306 may contain sulfuric acid ( H2SO4 ) , hydrogen chloride (HCl) and various additives, such as ethylene glycol or carbon dioxide.
和每一源槽306、330有關的閥門309與331調節流向供應槽302的化學物質,且可為多種市售閥門中的任一種,例如蝶形閥(butterfly valve)、節流閥(throttle valve)等。藉由控制器311來達成閥門309與331之啟用,控制器311優選地連接至控制系統318以接收來自控制系統318的訊號。過濾模組305包含複數個過濾槽304。回流管314連接於每一處理槽與一或更多的過濾槽304之間。在電鍍液回送至供應槽302以供再使用之前,過濾槽304去除用過的電鍍液中不需要的內容物。Valves 309 and 331 associated with each source tank 306, 330 regulate the flow of chemicals to the supply tank 302 and can be any of a variety of commercially available valves, such as butterfly valves, throttle valves, etc. Activation of valves 309 and 331 is achieved by controller 311, which is preferably connected to control system 318 to receive signals from control system 318. Filter module 305 includes a plurality of filter tanks 304. Return pipes 314 are connected between each processing tank and one or more filter tanks 304. The filter tanks 304 remove unwanted contents from the used plating solution before the plating solution is returned to the supply tank 302 for reuse.
供應槽302亦連接過濾槽304以促進供應槽302中的電介質與成分之再循環與過濾。藉由使來自供應槽302的電鍍液再循環通過過濾槽304,電鍍液中不需要的內容物被過濾層304連續地去除以維持一致的純度。此外,電鍍液在供應層302與過濾模組305之間再循環使電鍍液中的各種化學物質得以徹底混合。The supply tank 302 is also connected to the filter tank 304 to facilitate the recirculation and filtering of the dielectric and components in the supply tank 302. By recirculating the plating solution from the supply tank 302 through the filter tank 304, the unwanted contents of the plating solution are continuously removed by the filter layer 304 to maintain a consistent purity. In addition, the recirculation of the plating solution between the supply layer 302 and the filter module 305 allows the various chemical substances in the plating solution to be thoroughly mixed.
電鍍液調節系統300亦包含化學分析儀模組316,其提供電解質與成分之化學組成的即時(real-time)化學分析。分析儀模組316透過樣品管313流體耦接(fluidly coupled)供應槽302且透過出口管321流體耦接電鍍浴廢棄物處理系統322。分析儀模組316通常包含至少一分析儀與操作分析儀的控制器。The plating solution conditioning system 300 also includes a chemical analyzer module 316 that provides real-time chemical analysis of the chemical composition of the electrolyte and components. The analyzer module 316 is fluidly coupled to the supply tank 302 through a sample tube 313 and is fluidly coupled to the plating bath waste disposal system 322 through an outlet tube 321. The analyzer module 316 typically includes at least one analyzer and a controller for operating the analyzer.
特定處理工具需要的分析儀的數量取決於電鍍液的組成。例如,雖然第一分析儀可用於監控有機物質的濃度,但需要第二分析儀以測定電鍍液及/或補充劑的pH值。可使用額外的分析儀來監控將要被加入電鍍液中的特定成分,優選為其濃度可影響補充劑的pH值的成分。The number of analyzers required for a particular process tool depends on the composition of the plating solution. For example, while a first analyzer may be used to monitor the concentration of organic species, a second analyzer may be required to determine the pH of the plating solution and/or the supplement. Additional analyzers may be used to monitor specific components to be added to the plating solution, preferably components whose concentrations may affect the pH of the supplement.
在第3圖所示的特定實施例中,化學分析儀模組316包含自動滴定分析儀315與pH值測定系統317。兩種分析儀均可從各種供應商購買。自動滴定分析儀315測定無機物質的濃度,無機物質例如氯化銅與用於銅沉積的酸。pH值測定系統317測定從處理槽回到供應槽302的電鍍液207與補充劑的pH值。第3圖所示的分析儀模組僅是示例性的。在另一實施例中,每一分析儀可藉由單獨的供應管耦接供應槽,且可由單獨的控制器操作。控制器319發出指令訊號以操作自動滴定分析儀315與pH值測定系統317,以產生數據。In the specific embodiment shown in FIG. 3 , the chemical analyzer module 316 includes an automatic titration analyzer 315 and a pH measurement system 317. Both analyzers can be purchased from various suppliers. The automatic titration analyzer 315 measures the concentration of inorganic substances, such as cupric chloride and acids used for copper deposition. The pH measurement system 317 measures the pH of the plating solution 207 and the supplementary agent returned from the treatment tank to the supply tank 302. The analyzer module shown in FIG. 3 is exemplary only. In another embodiment, each analyzer can be coupled to the supply tank by a separate supply tube and can be operated by a separate controller. The controller 319 sends a command signal to operate the automatic titration analyzer 315 and the pH value measurement system 317 to generate data.
來自自動滴定分析儀315與pH值測定系統317的資訊接著被傳送至控制系統318。控制系統318處理資訊並將包含使用者定義的化學劑量參數的訊號傳送至調節控制器311。收到的資訊用於操作一或更多的閥門309與331以提供對源頭化學調節比例之即時調整,從而在整個電鍍處理過程中使電解質與成分維持所需的且優選的恆定化學組成。來自分析儀模組的廢棄物接著經由出口管321流向電鍍浴廢棄物處理系統322。Information from the automatic titration analyzer 315 and the pH determination system 317 is then transmitted to the control system 318. The control system 318 processes the information and transmits a signal containing user-defined chemical dosage parameters to the regulation controller 311. The received information is used to operate one or more valves 309 and 331 to provide real-time adjustment of the source chemical regulation ratio, thereby maintaining the desired and preferably constant chemical composition of the electrolyte and components throughout the electroplating process. The waste from the analyzer module then flows through the outlet pipe 321 to the electroplating bath waste treatment system 322.
然而,如前所述,亦可由控制系統318通過控制器311來啟動在沉積處理期間連續地或週期性地添加補充劑。一旦進入供應槽302,補充劑的pH值被分析。pH值接著被調整為與電鍍液的pH值相差小於5或約5,例如小於4.5或約4.5,例如小於4.25或約4.25,例如小於4或約4,例如小於3.75或約3.75,例如小於3.5或約3.5,例如小於3.25或約3.25,例如小於3或約3,例如小於2.75或約2.75,例如小於2.5或約2.5,例如小於2.25或約2.25,例如小於2或約2,例如小於1.75或約1.75,例如小於1.5或約1.5,例如小於1.25或約1.25,例如小於1或約1,例如小於0.75或約0.75,例如小於0.5或約0.5,例如小於0.25或約0.25,或其間的任意範圍或數值。從而,在多個實施例中,電鍍液的pH值與補充劑的pH值可實質上(substantially)相同。However, as previously described, the addition of the supplemental agent may also be initiated by the control system 318 via the controller 311 during the deposition process, either continuously or periodically. Once in the supply tank 302, the pH of the supplemental agent is analyzed. The pH is then adjusted to be less than 5 or about 5 different from the pH of the plating solution, such as less than 4.5 or about 4.5, such as less than 4.25 or about 4.25, such as less than 4 or about 4, such as less than 3.75 or about 3.75, such as less than 3.5 or about 3.5, such as less than 3.25 or about 3.25, such as less than 3 or about 3, such as less than 2.75 or about 2.75, such as less than 2.5 or about 2.5, such as less than 2.25 or about 2.25, such as less than 2 or about 2, such as less than 1.75 or about 1.75, such as less than 1.5 or about 1.5, such as less than 1.25 or about 1.25, such as less than 1 or about 1, such as less than 0.75 or about 0.75, such as less than 0.5 or about 0.5, such as less than 0.25 or about 0.25, or any range or value therebetween. Thus, in various embodiments, the pH of the plating solution and the pH of the supplement may be substantially the same.
換言之,在多個實施例中,可選擇補充劑的pH值以使在隨後的補充中的電鍍液之pH值變化小於20%或約20%,例如小於15%或約15%,例如小於12.5%或約12.5%,例如小於10%或約10%,例如小於7.5%或約7.5%,例如小於5%或約5%,例如小於2.5%或約2.5%,例如小於1%或約1%,或其間的任意範圍或數值。例如,在多個實施例中,在隨後的補充中,電鍍液的pH值變化小於4或約4,例如小於3.5或約3.5,例如小於3或約3,例如小於2.75或約2.75,例如小於2.5或約2.5,例如小於2.25或約2.25,例如小於2或約2,例如小於1.75或約1.75,例如小於1.5或約1.5,例如小於1.25或約1.25,例如小於1或約1,例如小於0.75或約0.75,例如小於0.5或約0.5,例如小於0.25或約0.25,或其間的任意範圍或數值。In other words, in many embodiments, the pH of the supplement can be selected so that the pH of the plating solution in a subsequent supplement varies by less than 20% or about 20%, such as less than 15% or about 15%, such as less than 12.5% or about 12.5%, such as less than 10% or about 10%, such as less than 7.5% or about 7.5%, such as less than 5% or about 5%, such as less than 2.5% or about 2.5%, such as less than 1% or about 1%, or any range or value therebetween. For example, in many embodiments, in subsequent replenishments, the pH of the plating solution changes by less than 4 or about 4, such as less than 3.5 or about 3.5, such as less than 3 or about 3, such as less than 2.75 or about 2.75, such as less than 2.5 or about 2.5, such as less than 2.25 or about 2.25, such as less than 2 or about 2, such as less than 1.75 or about 1.75, such as less than 1.5 or about 1.5, such as less than 1.25 or about 1.25, such as less than 1 or about 1, such as less than 0.75 or about 0.75, such as less than 0.5 or about 0.5, such as less than 0.25 or about 0.25, or any range or value therebetween.
在多個實施例中,電鍍液的pH值可和補充劑的pH值相差約2或更小,例如約1.5或更小,例如約1或更小,例如約0.5或更小,例如約0.2或更小,或其間的任意範圍或數值。例如,在多個實施例中,當電鍍液的pH值為約0至約5,例如約0.5至約4.5,例如約1至約4,或其間的任意範圍或數值時,補充劑的pH值亦為約0至約5,例如約0.5至約4.5,例如約1至約4,或其間的任意範圍或數值。附加地或替代地,當第一pH值為約8至約12,例如約8至約11,例如約8.5至約10,或其間的任意範圍或數值時,第二pH值為約8至約12,例如約8至約11,例如約8.5至約10,或其間的任意範圍或數值。In various embodiments, the pH of the plating solution may differ from the pH of the supplement by about 2 or less, such as about 1.5 or less, such as about 1 or less, such as about 0.5 or less, such as about 0.2 or less, or any range or value therebetween. For example, in various embodiments, when the pH of the plating solution is about 0 to about 5, such as about 0.5 to about 4.5, such as about 1 to about 4, or any range or value therebetween, the pH of the supplement is also about 0 to about 5, such as about 0.5 to about 4.5, such as about 1 to about 4, or any range or value therebetween. Additionally or alternatively, when the first pH value is about 8 to about 12, such as about 8 to about 11, such as about 8.5 to about 10, or any range or value therebetween, the second pH value is about 8 to about 12, such as about 8 to about 11, such as about 8.5 to about 10, or any range or value therebetween.
也就是說,如前所述,藉由使用具有預選的pH值的補充劑,可避免電鍍液的pH值快速改變,且不溶性材料保持在溶液中。可根據已知技術測量電鍍液的pH值,例如在攝氏20度的溶液中使用酸鹼度計(pH meter),以得到電鍍液pH值(第一pH值),並且可如同所述根據上述數值預先決定或校正補充劑的pH值,以得到第二pH值,第二pH值可相同或不同於第一pH值。在多個實施例中,以本技術領域中已知的方法校正酸鹼度計。在一些實施例中,電鍍液及/或補充劑的pH值可小於6或約為6,例如小於5或約為5,例如小於4.5或約為4.5,例如小於4或約為4,例如小於3.5或約為3.5,例如小於3或約為3,例如小於2.5或約為2.5,例如小於2或約為2,例如小於1.5或約為1.5,例如小於1或約為1,或其間的任意範圍或數值。附加地或替代地,在多個實施例中,電鍍液及/或補充劑的pH值可大於7或約為7,例如大於8或約為8,例如大於8.5或約為8.5,例如大於9或約為9,例如大於9.5或約為9.5,例如大於10或約為10,例如大於10.5或約為10.5,或其間的任意範圍或數值。That is, as previously described, by using a supplement with a preselected pH value, rapid changes in the pH of the plating solution can be avoided and insoluble materials can be kept in solution. The pH of the plating solution can be measured according to known techniques, such as using a pH meter in a solution at 20 degrees Celsius to obtain the pH of the plating solution (a first pH value), and the pH of the supplement can be predetermined or calibrated based on the above values as described to obtain a second pH value, which can be the same or different from the first pH value. In many embodiments, the pH meter is calibrated by methods known in the art. In some embodiments, the pH value of the plating solution and/or the supplement may be less than 6 or approximately 6, for example, less than 5 or approximately 5, for example, less than 4.5 or approximately 4.5, for example, less than 4 or approximately 4, for example, less than 3.5 or approximately 3.5, for example, less than 3 or approximately 3, for example, less than 2.5 or approximately 2.5, for example, less than 2 or approximately 2, for example, less than 1.5 or approximately 1.5, for example, less than 1 or approximately 1, or any range or value therebetween. Additionally or alternatively, in various embodiments, the pH of the plating solution and/or supplement may be greater than 7 or approximately 7, for example greater than 8 or approximately 8, for example greater than 8.5 or approximately 8.5, for example greater than 9 or approximately 9, for example greater than 9.5 or approximately 9.5, for example greater than 10 or approximately 10, for example greater than 10.5 or approximately 10.5, or any range or value therebetween.
在多個實施例中,可基於溶液中的前驅物粒子來挑選電鍍液、補充劑、或其組合的pH值。也就是說,如同本技術領域中已知的,一些電鍍材料,例如錫銀(SnAg),發生不溶性粒子之向上電鍍的可能性增加,且可能因此需要電鍍液、或補充劑、或兩者的pH值非常低(例如小於或約為3)以增加溶解度並避免不溶性沉積物。然而,本技術領域中具有通常知識者可以理解到,電鍍液中可能包含的非限定金屬(或其離子)包含銅、錫、金、鎳、銀、鈀、鉑和銠、以及合金例如貴金屬合金、錫銅合金、錫銀合金、錫銀銅合金、錫鉍合金、高導磁合金(permalloy)與其他鎳合金、鉛錫合金與其他無鉛合金,且可用於具有上述pH值或範圍中的任意一者或更多者的電鍍系統中。In various embodiments, the pH of the plating solution, the supplement, or a combination thereof may be selected based on the precursor particles in the solution. That is, as is known in the art, some plating materials, such as tin-silver (SnAg), have an increased likelihood of up-plating of insoluble particles and may therefore require a very low pH (e.g., less than or about 3) in the plating solution, or the supplement, or both to increase solubility and avoid insoluble deposits. However, it will be appreciated by those skilled in the art that non-limiting metals (or their ions) that may be included in the plating solution include copper, tin, gold, nickel, silver, palladium, platinum and rhodium, and alloys such as precious metal alloys, tin-copper alloys, tin-silver alloys, tin-silver-copper alloys, tin-bismuth alloys, permalloy and other nickel alloys, lead-tin alloys and other lead-free alloys, and may be used in a plating system having any one or more of the above-mentioned pH values or ranges.
此外,在多個實施例中,補充劑可含有在溶劑中的補充劑。在多個實施例中,溶劑可以和電鍍液電解質含有的溶劑相同,例如在一些實施例中可為水(去離子水)。選擇補充劑的pH值可包含選擇補充劑的種類。在多個實施例中,補充劑是無機酸,例如衍生自無機化合物的酸。適合的無機酸之非限定示例包含溴化氫(BrH)、碘化氫(HI)、氫氯酸(HCl)、硝酸(HNO 3)、亞硝酸(HNO 2)、磷酸(H 3PO 4)、硫酸(H 2SO 4)、硼酸(H 3BO 3)、氫氟酸(HF)、氫溴酸(HBr)、過氯酸(HClO 4)、氫碘酸(HI)及其組合。在多個實施例中,有機酸例如磺酸,例如甲基磺酸(MSA),是根據本揭露的合適補充劑。在多個實施例中,有機酸提供如此處所述的pH值控制,但亦可作為足以和溶液中的物質鍵結的螯合劑,此物質若沒有被螯合的話可能促進向上電鍍膜形成。在一些實施例中,甲基磺酸可包含1 M的甲基磺酸,且可以50:1的比例以水稀釋。在一些實施例中,適合此處使用的甲基磺酸包含具有0.02 M至約1 M的莫耳濃度的甲基磺酸,例如約0.03 M至約0.75 M的莫耳濃度的甲基磺酸,例如約0.4 M至約0.5 M的莫耳濃度的甲基磺酸,或其間的任意範圍或數值的莫耳濃度的甲基磺酸,並且其pH值介於1至6,例如介於2至5,例如介於2.5至4.5。 In addition, in various embodiments, the supplement may contain a supplement in a solvent. In various embodiments, the solvent may be the same as the solvent contained in the plating solution electrolyte, for example, in some embodiments, it may be water (deionized water). Selecting the pH value of the supplement may include selecting the type of supplement. In various embodiments, the supplement is an inorganic acid, such as an acid derived from an inorganic compound. Non-limiting examples of suitable inorganic acids include hydrogen bromide (BrH), hydrogen iodide (HI), hydrochloric acid (HCl), nitric acid (HNO 3 ), nitrous acid (HNO 2 ), phosphoric acid (H 3 PO 4 ), sulfuric acid (H 2 SO 4 ), boric acid (H 3 BO 3 ), hydrofluoric acid (HF), hydrobromic acid (HBr), perchloric acid (HClO 4 ), hydroiodic acid (HI), and combinations thereof. In various embodiments, organic acids such as sulfonic acids, such as methanesulfonic acid (MSA), are suitable supplemental agents according to the present disclosure. In various embodiments, the organic acid provides pH control as described herein, but can also act as a chelating agent sufficient to bond with species in solution that, if not chelated, might promote upward electroplating film formation. In some embodiments, the methanesulfonic acid may comprise 1 M methanesulfonic acid and may be diluted with water in a ratio of 50: 1. In some embodiments, methanesulfonic acid suitable for use herein comprises methanesulfonic acid having a molar concentration of 0.02 M to about 1 M, such as about 0.03 M to about 0.75 M, such as about 0.4 M to about 0.5 M, or any range or value therebetween, and having a pH between 1 and 6, such as between 2 and 5, such as between 2.5 and 4.5.
在多個實施例中,補充劑僅包含甲基磺酸,或者包含甲基磺酸與一或更多的pH值調整劑之組合。例如,甲基磺酸(pH值約為2且在水中的甲基磺酸濃度約20 g/L)可為補充劑提供足以避免或消除前驅物層及/或後續向上電鍍形成的pH值。在一實施例中,甲基磺酸是適用於本揭露之沖洗劑,其中甲基磺酸具有至少3.6 g/L的濃度且其溶液的pH值約為3。In various embodiments, the supplement comprises only methanesulfonic acid, or a combination of methanesulfonic acid and one or more pH adjusters. For example, methanesulfonic acid (pH of about 2 and a concentration of about 20 g/L of methanesulfonic acid in water) can provide a pH sufficient to avoid or eliminate the formation of a precursor layer and/or subsequent upward electroplating. In one embodiment, methanesulfonic acid is a suitable rinse agent for use in the present disclosure, wherein the methanesulfonic acid has a concentration of at least 3.6 g/L and the pH of its solution is about 3.
然而,在多個實施例中,本揭露發現在補充劑中使用無機酸,電鍍浴中的無機酸總濃度可能隨著時間增加而增加。從而,在多個實施例中,補充劑是包含碳酸(H 2CO 3)的酸性溶液。在多個實施例中,碳酸補充劑是藉由使二氧化碳溶於水中且在壓力下達到所需pH值。在多個實施例中,二氧化碳亦可直接注入水中以形成碳酸,或者可在滲透膜的一側對二氧化碳加壓而水在膜的另一側。此種系統可在市面上買到且通常被稱為氣體接觸器(gas contactor)。氣體擴散通過屏障且溶解於水中,從而形成碳酸。在多個實施例中,以足夠的量且在適合避免不溶性沉積物形成的條件下提供碳酸。 However, in various embodiments, the present disclosure has found that by using a mineral acid in the extender, the total concentration of the mineral acid in the electroplating bath may increase with time. Thus, in various embodiments, the extender is an acidic solution comprising carbonic acid (H 2 CO 3 ). In various embodiments, the carbonic acid extender is provided by dissolving carbon dioxide in water and bringing it to a desired pH under pressure. In various embodiments, the carbon dioxide may also be injected directly into the water to form carbonic acid, or the carbon dioxide may be pressurized on one side of a permeable membrane and the water on the other side of the membrane. Such systems are commercially available and are generally referred to as gas contactors. The gas diffuses through the barrier and dissolves in the water, thereby forming carbonic acid. In various embodiments, carbonic acid is provided in sufficient amounts and under conditions suitable to avoid the formation of insoluble precipitates.
附加地或替代地,在多個實施例中,補充劑是電解水,例如具有根據前述之一或更多的範圍的pH值的陰極水。藉由使用陰極水作為補充劑,電鍍液及/或電鍍浴的成分繼續存在溶液中且不會形成電鍍浴中的沉澱物或表面上的沉積物,這些沉澱物或沉積物會形成向上電鍍前驅物膜與最終的向上電鍍。在多個實施例中,例如可以類似方式使用鹼性電鍍液或浴、陽極水。Additionally or alternatively, in various embodiments, the supplement is electrolyzed water, such as cathodic water having a pH value according to one or more of the aforementioned ranges. By using cathodic water as a supplement, the components of the plating solution and/or plating bath remain in solution and do not form deposits in the plating bath or deposits on the surface, which would form the upward plating precursor film and the final upward plating. In various embodiments, for example, alkaline plating solutions or baths, anodic water can be used in a similar manner.
從而,在多個實施例中,補充劑可為無機酸、碳酸、電解水(包含陰極及/或陽極水)、或其組合。在更多的實施例中,補充劑可為甲基磺酸、碳酸、電解水、或其組合。Thus, in many embodiments, the supplement can be an inorganic acid, carbonic acid, electrolyzed water (including cathodic and/or anodic water), or a combination thereof. In more embodiments, the supplement can be methanesulfonic acid, carbonic acid, electrolyzed water, or a combination thereof.
此外,在多個實施例中,電鍍液在添加補充劑之前含有第一電解質濃度,電鍍液在添加之後含有第二電解質濃度。在多個實施例中,基於電鍍液中的電解質的重量,第一電解質濃度與第二電解質濃度相差小於10 wt.%或約10 wt.%,例如小於9 wt.%或約9 wt.%,例如小於8 wt.%或約8 wt.%,例如小於7 wt.%或約7 wt.%,例如小於6 wt.%或約6 wt.%,例如小於5 wt.%或約5 wt.%,例如小於4 wt.%或約4 wt.%,例如小於3 wt.%或約3 wt.%,例如小於2 wt.%或約2 wt.%,例如小於1 wt.%或約1 wt.%,或其間的任意範圍或數值。在一些實施例中,補充劑可因此大致上不含無機酸,以避免電解質濃度增加。Furthermore, in various embodiments, the plating solution contains a first electrolyte concentration before the addition of the supplemental agent, and the plating solution contains a second electrolyte concentration after the addition. In various embodiments, the first electrolyte concentration differs from the second electrolyte concentration by less than or about 10 wt.%, such as less than or about 9 wt.%, such as less than or about 8 wt.%, such as less than or about 7 wt.%, such as less than or about 6 wt.%, such as less than or about 5 wt.%, such as less than or about 4 wt.%, such as less than or about 3 wt.%, such as less than or about 2 wt.%, such as less than or about 1 wt.%, or any range or value therebetween, based on the weight of the electrolyte in the plating solution. In some embodiments, the supplement may therefore be substantially free of inorganic acid to avoid an increase in electrolyte concentration.
然而,在多個實施例中,亦可包含pH值調整劑以使補充劑具有預選的pH值。在多個實施例中,可以在補充劑的最終組成中得到所需pH值所必須的任意量提供pH值調整劑。酸性pH值調整劑可以是有機酸(包含胺基酸)與無機酸。酸性pH值調整劑的非限定示例包含醋酸、檸檬酸、延胡索酸(fumaric acid)、麩胺酸(glutamic acid)、羥乙酸(glycolic acid)、氫氯酸、乳酸、硝酸、磷酸、硫酸氫鈉、硫酸等、及其組合。在多個實施例中,所有有機酸均可用作pH值調整劑。鹼性pH值調整劑的非限定示例包含鹼金屬氫氧化物(例如氫氧化鈉與氫氧化鉀)、氫氧化銨、有機鹼、以及無機酸的鹼金屬鹽類(例如硼酸鈉(硼砂)、磷酸鈉、焦磷酸鈉等、及其混合)。However, in many embodiments, a pH adjuster may also be included to give the supplement a preselected pH value. In many embodiments, the pH adjuster may be provided in any amount necessary to obtain the desired pH value in the final composition of the supplement. Acidic pH adjusters may be organic acids (including amino acids) and inorganic acids. Non-limiting examples of acidic pH adjusters include acetic acid, citric acid, fumaric acid, glutamic acid, glycolic acid, hydrochloric acid, lactic acid, nitric acid, phosphoric acid, sodium bisulfate, sulfuric acid, etc., and combinations thereof. In many embodiments, all organic acids may be used as pH adjusters. Non-limiting examples of alkaline pH adjusters include alkaline metal hydroxides (such as sodium hydroxide and potassium hydroxide), ammonium hydroxide, organic bases, and alkaline metal salts of inorganic acids (such as sodium borate (borax), sodium phosphate, sodium pyrophosphate, etc., and mixtures thereof).
從上文可以看出,調節補充劑可包含一或更多的操作步驟410,將參照第4圖更詳細說明操作步驟410。例如,在多個實施例中,調節補充劑包含將補充劑原生的pH值改變為第二pH值。在多個實施例中,如上所述,調解可包含選擇具有所需pH值的補充劑。在此實施例中,原生的pH值可能大致上等於第二pH值。附加地或替代地,調節可包含改變補充劑之溶液中的酸濃度、添加pH值調整劑(例如酸化劑或鹼化劑)、或其組合。As can be seen from the above, adjusting the supplement may include one or more operation steps 410, which will be described in more detail with reference to FIG. 4. For example, in various embodiments, adjusting the supplement includes changing the native pH of the supplement to a second pH. In various embodiments, as described above, the adjustment may include selecting a supplement with a desired pH. In this embodiment, the native pH may be substantially equal to the second pH. Additionally or alternatively, the adjustment may include changing the acid concentration in the solution of the supplement, adding a pH adjuster (e.g., an acidulant or an alkalizer), or a combination thereof.
然而,在補充劑已被調節為所需pH值之後,補充劑可被送到電鍍浴205以取代任意損失的電鍍液體積。在多個實施例中,可連續地供應補充劑,或可在一或更多的電鍍循環後添加補充劑。附加地或替代地,基於電鍍浴溶液的體積,可在電鍍浴205顯示電鍍液的體積減少量大於1 vol%或約1 vol%時將補充劑加入電鍍浴205中,例如體積減少量大於2.5 vol%或約2.5 vol%,例如體積減少量大於5 vol%或約5 vol%,例如體積減少量大於7.5 vol%或約7.5 vol%,例如體積減少量大於10 vol%或約10 vol%,或其間的任意範圍或數值。例如,在多個實施例中,電鍍浴可具有操作體積,當流體低於操作水平以下時就將補充劑加入電鍍浴中直到再度達到操作水平。However, after the supplement has been adjusted to the desired pH, the supplement may be delivered to the plating bath 205 to replace any lost plating liquid volume. In various embodiments, the supplement may be supplied continuously, or the supplement may be added after one or more plating cycles. Additionally or alternatively, based on the volume of the plating bath solution, the supplemental agent can be added to the plating bath 205 when the plating bath 205 shows a decrease in the volume of the plating solution by greater than or about 1 vol%, such as a decrease in volume by greater than or about 2.5 vol%, such as a decrease in volume by greater than or about 5 vol%, such as a decrease in volume by greater than or about 7.5 vol%, such as a decrease in volume by greater than or about 10 vol%, or any range or value therebetween. For example, in various embodiments, the plating bath can have an operating volume, and the supplemental agent is added to the plating bath when the fluid drops below the operating level until the operating level is reached again.
雖然上述實施例使用補充劑之即時監控與調整,但是根據此處描述的技術可採用各種替代方案。例如,可由觀察化學分析儀模組316提供的輸出值之操作員手動控制調節模組303。例如,系統軟體可允許自動即時調整模式與操作員(手動)模式。此外,雖然第3圖示出多個控制器,但可使用單一控制器操作系統的各種組成部分,例如化學分析儀模組316、調節模組303與熱交換器324。其他實施例對本技術領域中具有通常知識者將是顯而易見的。Although the above-described embodiments use real-time monitoring and adjustment of supplements, various alternatives may be employed in accordance with the techniques described herein. For example, the adjustment module 303 may be manually controlled by an operator observing the output values provided by the chemical analyzer module 316. For example, the system software may allow for an automatic real-time adjustment mode and an operator (manual) mode. In addition, although FIG. 3 shows multiple controllers, a single controller may be used to operate various components of the system, such as the chemical analyzer module 316, the adjustment module 303, and the heat exchanger 324. Other embodiments will be apparent to those of ordinary skill in the art.
然而,應理解的是,在多個實施例中,根據本揭露之方法包含有指令儲存於其上的非暫態(non-transitory)電腦可讀取媒體,當其執行時可引起用以減少或消除導電性沉積物形成於電鍍系統中的表面上的方法。例如,在多個實施例中,非暫態電腦可讀取媒體可執行方法中的任意一或更多操作步驟,例如執行pH值測量、比較pH值、調節補充劑的pH值、及/或補充電鍍浴。However, it should be understood that in various embodiments, methods according to the present disclosure include a non-transitory computer readable medium having instructions stored thereon that, when executed, may result in a method for reducing or eliminating the formation of conductive deposits on a surface in an electroplating system. For example, in various embodiments, the non-transitory computer readable medium may perform any one or more of the steps of the method, such as performing a pH measurement, comparing pH values, adjusting the pH of a supplement, and/or replenishing a plating bath.
電鍍液調節系統300亦包含廢棄物排水管320,廢棄物排水管320連接電鍍浴廢棄物處理系統322以安全處理用過的電解質、成分、化學物質與電鍍系統中使用的其他流體。優選地,電鍍槽包含到廢棄物排水管320或電鍍浴廢棄物處理系統322的直接管路連接,以對電鍍槽進行排放而不透過電鍍液調節系統300回送電鍍液。電鍍液調節系統300優選地亦包含排放連接(bleed off connection),以將過量電解質與成分排放至廢棄物排水管320。The plating solution conditioning system 300 also includes a waste drain 320 that connects to a plating bath waste disposal system 322 for safe disposal of spent electrolytes, components, chemicals, and other fluids used in the plating system. Preferably, the plating cell includes a direct piping connection to the waste drain 320 or the plating bath waste disposal system 322 to drain the plating cell without returning the plating solution through the plating solution conditioning system 300. The plating solution conditioning system 300 also preferably includes a bleed off connection to discharge excess electrolyte and components to the waste drain 320.
雖然第3圖未繪示,但電鍍液調節系統300可包含許多其他成分。例如,電鍍液調節系統300優選地亦包含一或更多附加槽體以儲存用於基板清潔系統的化學物質。還可以採用用於危險性材料連接的雙層管(double-contained piping),以在整個系統中安全輸送化學物質。可選地,電鍍液調節系統300包含到附加或外部處理系統的連接以對電鍍系統提供附加供給(additional supplies)。Although not shown in FIG. 3 , the plating solution conditioning system 300 may include many other components. For example, the plating solution conditioning system 300 preferably also includes one or more additional tanks to store chemicals for the substrate cleaning system. Double-contained piping for hazardous material connections may also be used to safely transport chemicals throughout the system. Optionally, the plating solution conditioning system 300 includes connections to additional or external processing systems to provide additional supplies to the plating system.
上述系統的多個實施例與腔室可存在於電鍍腔室中,電鍍腔室表現出如此處所討論的減少的或消除的沉澱物或向上電鍍。第4圖係繪示根據本技術的多個實施例之補充電鍍浴之方法400中的多個示例性操作步驟。方法400亦可包含在方法開始之前的一或更多的操作步驟,包含填充、電鍍、溶質調整、或可進行於所述操作步驟之前的任意其他操作步驟。方法可進一步包含許多可選的操作步驟,其可能和根據本技術之方法之一些實施例具體相關,也可能不具體相關。例如,描述許多操作步驟以使進行的方法具有更寬廣的範圍,但這些操作步驟對本技術並非至關重要的或可能以替代的方法來進行,如同以下將更詳細討論的。Embodiments of the above-described systems and chambers may be present in a plating chamber that exhibits reduced or eliminated deposits or up-plating as discussed herein. FIG. 4 illustrates exemplary operating steps in a method 400 for replenishing a plating bath according to embodiments of the present technology. The method 400 may also include one or more operating steps prior to the start of the method, including filling, plating, solute adjustment, or any other operating steps that may be performed prior to the operating steps. The method may further include a number of optional operating steps that may or may not be specifically related to some embodiments of the method according to the present technology. For example, many operating steps are described to enable the method to be performed to have a broader scope, but these operating steps are not essential to the present technology or may be performed in alternative methods, as will be discussed in more detail below.
方法400可包含如前述關於第1圖至第3圖示例性描述的多個操作步驟,以減少不溶性沉積物在電鍍期間形成於半導體電鍍系統中或其表面。例如,方法400包含操作步驟402,其包含提供電鍍系統100。在可選的操作步驟404中,如上所述,電鍍系統100可包含可移動頭部,可移動頭部能夠從第一位置移動至第二位置以將基板215及/或密封件130配置為接觸電鍍液207。在將基板215及/或密封件130配置為接觸電鍍液207之後,方法可包含基板215之可選的操作步驟406,如上所述。Method 400 may include a plurality of operating steps as described above with respect to FIGS. 1 to 3 to reduce the formation of insoluble deposits in or on a semiconductor plating system during plating. For example, method 400 includes operating step 402, which includes providing a plating system 100. In optional operating step 404, as described above, the plating system 100 may include a movable head that can be moved from a first position to a second position to configure the substrate 215 and/or the seal 130 to contact the plating solution 207. After the substrate 215 and/or the seal 130 are configured to contact the plating solution 207, the method may include optional operating step 406 of the substrate 215, as described above.
在操作步驟408,電鍍液體積可能減少。在多個實施例中,體積減少可能是因為蒸發、溢出、轉移等。然而,在多個實施例中,電鍍液體積從第一體積減少至第二體積。At operation 408, the volume of the plating solution may decrease. In various embodiments, the volume decrease may be due to evaporation, overflow, transfer, etc. However, in various embodiments, the volume of the plating solution decreases from a first volume to a second volume.
操作步驟410包含可選地調節補充劑之步驟。如上所述,在一些實施例中,補充劑可能已經具有合適的pH值且不需要調節。然而,可能於操作步驟410提供補充劑,其pH值和電鍍液的pH值相差小於40%或約40%。如上所述,補充劑可原生地具有所需的pH值,或者可在操作步驟410被調節以包含一或更多的附加pH值調整劑。Operation 410 includes the step of optionally adjusting the supplement. As described above, in some embodiments, the supplement may already have a suitable pH and may not require adjustment. However, a supplement may be provided at operation 410 whose pH differs from the pH of the plating solution by less than or about 40%. As described above, the supplement may have a desired pH natively, or may be adjusted at operation 410 to include one or more additional pH adjusters.
然而,在多個實施例中,方法包含,如操作步驟412所示,以補充劑補充具有第一pH值(測得的pH值)的電鍍浴溶液使其體積大於第二體積,在多個實施例中第二體積可等於第一體積。此外,如上所述,應理解的是方法400不需要從電鍍浴中移除任何元件或拆卸電鍍浴自身。反而,透過小心地調整補充劑的組成,導致電鍍浴沉澱物或向上電鍍的不溶性材料可維持於溶液中且可使用在第3圖之相關討論中的任意過濾處理來移除。從而,本技術可避免向上電鍍發生而不需要電鍍浴之停機時間,可消除破壞性清潔處理之需求。此外,本技術發現,使用如此處討論的補充劑可以避免由於加入具有完全不同的pH值之稀釋劑時pH值快速變化而導致的不溶性粒子或離子之最初沉澱。從而,可大幅減少或完全避免電鍍浴沉澱物或不溶性材料之最初層的形成、以及其引起的向上電鍍。此效果特別表現在電鍍浴205相鄰於入口供應212之部分,例如任意密封件、閥門或相鄰於入口供應212的元件(未繪示),以及任意密封件或特別容易有不溶性沉積物的位置。However, in various embodiments, the method includes, as shown in operation 412, supplementing a plating bath solution having a first pH value (measured pH value) with a supplementer to a volume greater than a second volume, which in various embodiments may be equal to the first volume. In addition, as described above, it should be understood that method 400 does not require the removal of any components from the plating bath or the disassembly of the plating bath itself. Instead, by carefully adjusting the composition of the supplementer, the plating bath precipitate or insoluble material that is plated upward can be maintained in solution and can be removed using any of the filtration processes discussed in connection with FIG. 3. Thus, the present technology can avoid the occurrence of upward plating without requiring downtime of the plating bath, and can eliminate the need for disruptive cleaning processes. In addition, the present technique has discovered that the use of a supplement as discussed herein can avoid the initial precipitation of insoluble particles or ions caused by rapid pH changes when adding a diluent having a completely different pH. Thus, the formation of an initial layer of plating bath deposits or insoluble materials, and the resulting upward plating, can be greatly reduced or completely avoided. This effect is particularly evident in the portion of the plating bath 205 adjacent to the inlet supply 212, such as any seals, valves, or components adjacent to the inlet supply 212 (not shown), and any seals or locations that are particularly susceptible to insoluble deposits.
此外,應理解的是,原始體積亦可理解為第一體積。從而,在一些方面中,當電鍍系統100中偵測到小於第一體積的第二體積時可發生操作步驟412。電鍍液體積減少可根據以上討論的數值或範圍之任意一或更多者。Additionally, it should be understood that the initial volume may also be understood as the first volume. Thus, in some aspects, operation step 412 may occur when a second volume less than the first volume is detected in the electroplating system 100. The reduction in the volume of the plating solution may be based on any one or more of the values or ranges discussed above.
在前面的說明中,為了說明之目的,已經提出許多細節以提供對本技術之各種實施例的理解。然而,對本技術領域中具有通常知識者而言顯而易見的是,某些實施例可以在缺乏這些細節中的某些細節或在具有附加細節的情況下實現。例如,受益於所述避免向上電鍍或避免殘留物之技術的其他電鍍浴或電鍍設備亦可和本技術一起使用。In the foregoing description, for purposes of illustration, many details have been set forth to provide an understanding of various embodiments of the present technology. However, it will be apparent to one of ordinary skill in the art that certain embodiments may be practiced without some of these details or with additional details. For example, other plating baths or plating apparatus that benefit from the techniques of avoiding upward plating or avoiding residues may also be used with the present technology.
在已揭露數種實施例的情況下,本技術領域中具有通常知識者將理解,在不背離實施例之精神的情況下可使用各種變化、替代構造、及同等物。此外,為了避免不必要地混淆本技術,本文未說明一些已知的製程與元件。因此,上述說明不應被當作對本技術之範圍的限制。While several embodiments have been disclosed, those skilled in the art will appreciate that various variations, alternative configurations, and equivalents may be used without departing from the spirit of the embodiments. In addition, some known processes and components are not described herein to avoid unnecessary confusion of the present technology. Therefore, the above description should not be regarded as limiting the scope of the present technology.
當提供數值範圍時,應理解的是,除非本文另有清楚指明,否則介於此範圍的上限值與下限值之間的每一中間的數值,至下限值單位的最小分數亦明確地揭露。在所述數值之間的任意較窄的範圍或所述範圍中的任意未陳述的中間數值、以及在所述範圍中的任何其他陳述數值或中間數值係包含在內。這些較小範圍的上限值與下限值可獨立地包含在範圍中或從範圍中排除,且任一極限值包含在較小範圍中、兩個極限值均不包含在較小範圍中、或兩個極限值皆包含在較小範圍中的每一範圍均包含於本技術中,但仍受限於所述範圍中的任何明確排除的限制。當所述範圍包含一或兩個極限值時,排除任一個或兩個該些極限值之範圍亦包含在內。當列表提供多個數值時,包含或基於該些數值中的任意者的任意範圍係類似地明確揭露。When providing a numerical range, it should be understood that, unless otherwise clearly indicated herein, every intermediate value between the upper and lower limits of the range is also explicitly disclosed to the smallest fraction of the lower limit unit. Any narrower range between the values or any unstated intermediate values in the range, as well as any other stated or intermediate values in the range, are included. The upper and lower limits of these smaller ranges may be independently included in the range or excluded from the range, and any range in which either limit is included in the smaller range, both limits are not included in the smaller range, or both limits are included in the smaller range is included in the present technology, but is still subject to any explicitly excluded limits in the range. When the stated range includes one or both of the limits, ranges excluding either or both of those limits are also included. When a list provides multiple values, any ranges including or based on any of those values are similarly explicitly disclosed.
除非內文明確規定,否則此處與附加的申請專利範圍中使用的單數形式「一」與「該」包含複數形式。因此,舉例而言,提及「一補充劑」包含複數個此補充劑、提及「該體積」包含一或更多的體積及本技術領域中具有通常知識者已知的同等物等等。As used herein and in the appended claims, the singular forms "a," "an," and "the" include the plural forms unless the context clearly dictates otherwise. Thus, for example, reference to "a supplement" includes a plurality of such supplements and reference to "the volume" includes one or more volumes and equivalents thereof known to those skilled in the art, and so forth.
而且,本說明書與以下申請專利範圍中之用語「包含」、「含有」與「包括」旨在明確說明所述之特徵、整數、元件或操作,但其不排除存在或增加一或更多的其他特徵、整數、元件、操作、動作或群組。Furthermore, the terms "comprise", "include" and "include" in this specification and the following patent application are intended to clearly describe the described features, integers, components or operations, but do not exclude the existence or addition of one or more other features, integers, components, operations, actions or groups.
100:電鍍系統 110:系統頭部 115:碗槽 120:頭部升降件 125:平台板 130:密封件 135:沖洗系統 200:電鍍設備 205:電鍍浴 207:電鍍液 210:頭部 212:入口供應 214:電鍍浴回流管 215:基板 216:密封件 220:沖洗框 225:邊緣 227:沖洗通道 230:側壁 235:氣室 250:側面清潔噴嘴 300:電鍍液調節系統 302:供應槽 303:調節模組 304:過濾槽 305:過濾模組 306,330:源槽 307,309,331:閥門 308:流體幫浦 312:供應管 313:樣品管 314:回流管 315:自動滴定分析儀 316:化學分析儀模組 317:pH值測定系統 318:控制系統 310,311,319:控制器 320:廢棄物排水管 321:出口管 322:電鍍浴廢棄物處理系統 324:熱交換器 400:方法 402,404,406,408,410,412:操作步驟 100: Plating system 110: System head 115: Bowl 120: Head lift 125: Platform plate 130: Seal 135: Flushing system 200: Plating equipment 205: Plating bath 207: Plating solution 210: Head 212: Inlet supply 214: Plating bath return pipe 215: Substrate 216: Seal 220: Flushing frame 225: Edge 227: Flushing channel 230: Side wall 235: Air chamber 250: Side cleaning nozzle 300: Plating solution regulation system 302: Supply tank 303: Regulating module 304: Filter tank 305: Filter module 306,330: Source tank 307,309,331: Valve 308: Fluid pump 312: Supply pipe 313: Sample pipe 314: Reflux pipe 315: Automatic titration analyzer 316: Chemical analyzer module 317: pH value determination system 318: Control system 310,311,319: Controller 320: Waste drain pipe 321: Outlet pipe 322: Electroplating bath waste treatment system 324: Heat exchanger 400: Method 402,404,406,408,410,412: Operation steps
藉由參考說明書的剩餘部分與圖式,可進一步理解所揭技術的本質與益處。 第1圖係繪示根據本技術之多個實施例之電鍍系統的示意透視圖; 第2圖係繪示根據本技術之多個實施例之電鍍系統的局部剖面圖; 第3圖係繪示根據本技術之多個實施例之電鍍液調節系統的示意圖;及 第4圖係繪示減少不溶性沉積物形成於電鍍系統中的方法中的多個示例性操作步驟。 提供多張圖式作為示意圖。應理解的是,圖式是用於說明,除非具體指明圖式是按比例繪製的,否則不應將圖式視為按比例繪製。此外,作為示意圖,提供圖式是為了幫助理解,相較於實際情況,圖式可能不包含所有方面或資訊,而且為了說明之目的,圖式可能包含誇大的部分。 在附圖中,相似的元件及/或特徵可能具有相同的元件符號。而且,可藉由在元件符號後面增加區分相似元件之字母來區別相同類型的各種元件。如果僅有在先的元件符號用於說明書中,敘述亦適用於具有相同在先元件符號而不論字母之相似元件。 The nature and benefits of the disclosed technology can be further understood by referring to the remainder of the specification and the drawings. FIG. 1 is a schematic perspective view of a plating system according to various embodiments of the present technology; FIG. 2 is a partial cross-sectional view of a plating system according to various embodiments of the present technology; FIG. 3 is a schematic view of a plating solution conditioning system according to various embodiments of the present technology; and FIG. 4 is a diagram of a plurality of exemplary operating steps in a method for reducing the formation of insoluble deposits in a plating system. Multiple drawings are provided as schematic drawings. It should be understood that the drawings are used for illustration and should not be considered to be drawn to scale unless it is specifically indicated that the drawings are drawn to scale. In addition, as schematic diagrams, the drawings are provided to aid understanding and may not include all aspects or information compared to the actual situation, and may contain exaggerated parts for the purpose of explanation. In the accompanying drawings, similar components and/or features may have the same component symbols. Moreover, various components of the same type can be distinguished by adding letters that distinguish similar components after the component symbols. If only the previous component symbol is used in the specification, the description also applies to similar components with the same previous component symbol regardless of the letter.
400:方法 400:Method
402,404,406,408,410,412:操作步驟 402,404,406,408,410,412: Operation steps
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US18/173,683 US20240287702A1 (en) | 2023-02-23 | 2023-02-23 | Methods of reducing or eliminating deposits in an electroplating system |
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US4781806A (en) * | 1985-10-11 | 1988-11-01 | Dominic Tenace | Electroplating system |
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US10190232B2 (en) * | 2013-08-06 | 2019-01-29 | Lam Research Corporation | Apparatuses and methods for maintaining pH in nickel electroplating baths |
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US11371159B2 (en) * | 2019-06-22 | 2022-06-28 | Applied Materials, Inc. | Methods of reducing or eliminating deposits after electrochemical plating in an electroplating processor |
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