TW202431493A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

The present invention provides a substrate processing apparatus and a substrate processing method. A substrate processing apparatus (100) includes a substrate processing unit (10), an electrolysis section (310), an ozone water tank (320), and a hydrogen water tank (330). The substrate processing unit (10) includes nozzles (44, 54) that supply cleaning liquids to a substrate (W). The electrolysis section (310) electrolyzes pure water to generate, as the cleaning liquids, ozone water and hydrogen water. The ozone water tank (320) accommodates the ozone water. The hydrogen water tank (330) accommodates the hydrogen water. The nozzles (44, 54) supply the ozone water from the ozone tank (320) and the hydrogen water from the hydrogen water tank (330) to the substrate (W).

Description

Substrate processing device and substrate processing method

The present invention relates to a substrate processing device and a substrate processing method.

Previously, there is a known substrate processing device for processing a substrate. The substrate processing device can be preferably used to manufacture a semiconductor substrate. The substrate processing device uses a processing liquid such as a chemical solution to process the substrate. As such a substrate processing device, there is a known substrate processing device that uses pure water to rinse (clean) the substrate after processing the substrate using a processing liquid such as a chemical solution (for example, refer to Patent Document 1). [Prior Technical Document] [Patent Document]

[Patent Document 1] Japanese Patent Publication No. 2022-171462

[The problem the invention is trying to solve]

Furthermore, when a metal film is formed on the surface of a substrate, the metal film may be corroded if it is rinsed with pure water as in Patent Document 1. Therefore, for a substrate with a metal film formed on the surface, after the substrate is treated with a treatment liquid such as a chemical solution, it is sometimes rinsed with ammonia water.

However, if ammonia is used as a rinse liquid, when the substrate is rotated at high speed in the subsequent drying process, ammonia may remain on the inner surface of the shield (the surface that receives ammonia), or ammonia discharged from the substrate may splash on the shield and adhere to the substrate. Therefore, there is a problem that ammonia becomes particles.

The present invention is made in view of the above-mentioned problem, and its purpose is to provide a substrate processing device and a substrate processing method that can suppress the cleaning liquid from turning into particles. [Technical means for solving the problem]

According to one aspect of the present invention, a substrate processing device includes a substrate processing unit, an electrolysis unit, an ozone water tank, and a hydrogen water tank. The substrate processing unit has a nozzle for supplying a cleaning liquid to a substrate. The electrolysis unit electrolyzes pure water to generate ozone water and hydrogen water as the cleaning liquid. The ozone water tank contains the ozone water. The hydrogen water tank contains the hydrogen water. The nozzle supplies the ozone water from the ozone water tank and the hydrogen water from the hydrogen water tank to the substrate.

In one embodiment, the nozzle includes a first nozzle and a second nozzle. The first nozzle supplies at least one of the ozone water and the hydrogen water to the upper surface of the substrate. The second nozzle supplies at least the other of the ozone water and the hydrogen water to the lower surface of the substrate.

In one embodiment, the first nozzle and the second nozzle supply the cleaning liquid to the substrate at the same time.

In a certain embodiment, the substrate processing apparatus is provided with an ozone water pipe, a hydrogen water pipe and a switching valve. The ozone water pipe supplies the ozone water in the ozone water tank to at least one of the first nozzle and the second nozzle. The hydrogen water pipe supplies the hydrogen water in the hydrogen water tank to at least one of the first nozzle and the second nozzle. The switching valve switches the cleaning liquid supplied to at least one of the first nozzle and the second nozzle. At least one of the first nozzle and the second nozzle supplies the ozone water and the hydrogen water to the substrate.

In a certain embodiment, one of the first nozzle and the second nozzle is the second nozzle. The first nozzle supplies one of the ozone water and the hydrogen water to the upper surface of the substrate, and at the same time, the second nozzle supplies the other of the ozone water and the hydrogen water to the lower surface of the substrate, and then the switching valve switches the cleaning liquid supplied to the second nozzle, whereby the first nozzle and the second nozzle simultaneously supply one of the ozone water and the hydrogen water to the substrate.

In a certain embodiment, the first nozzle supplies the hydrogen water to the upper surface of the substrate, and at the same time, the second nozzle supplies the ozone water to the lower surface of the substrate. Then, the switching valve switches the cleaning liquid supplied to the second nozzle from the ozone water to the hydrogen water, whereby the first nozzle and the second nozzle supply the hydrogen water to the substrate at the same time.

In one embodiment, the first nozzle supplies the hydrogen water to the upper surface of the substrate, and the second nozzle supplies the ozone water to the lower surface of the substrate.

In one embodiment, the substrate processing device is provided with a bubble generating device for generating bubbles in the hydrogen water.

According to another aspect of the present invention, a substrate processing method includes: a generation process of electrolyzing pure water to generate ozone water and hydrogen water as cleaning liquids; and a cleaning process of cleaning the substrate with the ozone water and hydrogen water. In the generation process, the generated ozone water is stored in an ozone water tank, and the generated hydrogen water is stored in a hydrogen water tank. In the cleaning process, the ozone water in the ozone water tank is supplied to the substrate, and the hydrogen water in the hydrogen water tank is supplied to the substrate.

In one embodiment, in the cleaning step, at least one of the ozone water and the hydrogen water is supplied to the upper surface of the substrate, and at least the other of the ozone water and the hydrogen water is supplied to the lower surface of the substrate.

In one embodiment, in the cleaning step, the cleaning liquid is supplied to the upper surface and the lower surface of the substrate at the same time.

In one embodiment, in the cleaning step, the cleaning liquid supplied to at least one of the upper surface and the lower surface of the substrate is switched.

In a certain embodiment, in the above-mentioned cleaning process, one of the above-mentioned ozone water and the above-mentioned hydrogen water is supplied to the above-mentioned upper surface of the above-mentioned substrate, and at the same time, the other of the above-mentioned ozone water and the above-mentioned hydrogen water is supplied to the above-mentioned lower surface of the above-mentioned substrate, and then the above-mentioned cleaning liquid supplied to the above-mentioned lower surface of the above-mentioned substrate is switched, thereby supplying one of the above-mentioned ozone water and the above-mentioned hydrogen water to the above-mentioned substrate at the same time.

In a certain embodiment, in the above-mentioned cleaning process, the above-mentioned hydrogen water is supplied to the above-mentioned upper surface of the above-mentioned substrate, and at the same time, the above-mentioned ozone water is supplied to the above-mentioned lower surface of the above-mentioned substrate, and then, the above-mentioned cleaning liquid supplied to the above-mentioned lower surface of the above-mentioned substrate is switched from the above-mentioned ozone water to the above-mentioned hydrogen water, thereby supplying the above-mentioned hydrogen water to the above-mentioned upper surface and the above-mentioned lower surface of the above-mentioned substrate at the same time.

In one embodiment, in the cleaning step, the hydrogen water is supplied to the upper surface of the substrate, and the ozone water is supplied to the lower surface of the substrate.

In a certain embodiment, bubbles are generated in the hydrogen water before the hydrogen water is supplied to the substrate. [Effect of the invention]

According to the present invention, a substrate processing apparatus and a substrate processing method capable of suppressing a cleaning liquid from becoming particles can be provided.

Hereinafter, the implementation of the substrate processing device of the present invention will be described with reference to the drawings. In addition, the same reference symbols are used for the same or equivalent parts in the drawings, and the description is not repeated. In the specification of this case, in order to facilitate the understanding of the invention, mutually orthogonal X-axis, Y-axis and Z-axis are sometimes described. In this implementation, the X-axis and Y-axis are parallel to the horizontal direction, and the Z-axis is parallel to the vertical direction.

(First embodiment) Referring to FIGS. 1 to 5 , the substrate processing apparatus 100 of the first embodiment of the present invention will be described. FIG. 1 is a schematic top view of the substrate processing apparatus 100 of the first embodiment.

1 , the substrate processing apparatus 100 processes a substrate W. The substrate processing apparatus 100 processes the substrate W by performing at least one of etching, surface treatment, property imparting, process film formation, removal of at least a portion of a film, and cleaning.

The substrate W is used as a semiconductor substrate. The substrate W includes a semiconductor wafer. For example, the substrate W is substantially in the shape of a circular plate. Here, the substrate processing device 100 processes the substrate W piece by piece.

The substrate processing apparatus 100 includes a plurality of substrate processing units 10, a processing liquid tank 110, a processing liquid box 120, a plurality of loading ports LP, a carrier robot IR, a central robot CR, and a control device 101. The control device 101 controls the loading ports LP, the carrier robot IR, and the central robot CR. The control device 101 includes a control unit 102 and a memory unit 104.

Each loading port LP stacks and stores a plurality of substrates W. The carrier robot IR transports the substrates W between the loading port LP and the central robot CR. The central robot CR transports the substrates W between the carrier robot IR and the substrate processing unit 10. Each substrate processing unit 10 sprays a processing liquid onto the substrate W to process the substrate W. The processing liquid includes, for example, a chemical solution, a rinse liquid (cleaning liquid), a removal liquid and/or a water repellent. The processing liquid tank 110 stores the processing liquid. Furthermore, the processing liquid tank 110 can also store gas.

Specifically, the plurality of substrate processing units 10 form a plurality of towers TW (four towers TW in FIG. 1 ) arranged in a manner to surround the central robot CR in a top view. Each tower TW includes a plurality of substrate processing units 10 stacked up and down (three substrate processing units 10 in FIG. 1 ). The processing liquid tanks 120 correspond to the plurality of towers TW, respectively. The liquid in the processing liquid tank 110 is supplied to all substrate processing units 10 included in the tower TW corresponding to the processing liquid tank 120 via any processing liquid tank 120. In addition, the gas in the processing liquid tank 110 is supplied to all substrate processing units 10 included in the tower TW corresponding to the processing liquid tank 120 via any processing liquid tank 120.

Typically, the processing liquid tank 110 has a preparation tank (tank) for preparing the processing liquid. The processing liquid tank 110 may have a preparation tank for one processing liquid or a plurality of processing liquids. In addition, the processing liquid tank 110 has a pump, a nozzle and/or a filter for circulating the processing liquid.

The control device 101 controls various operations of the substrate processing apparatus 100. The substrate processing unit 10 processes the substrate W through the control device 101.

The control device 101 includes a control unit 102 and a memory unit 104. The control unit 102 has a processor. The control unit 102 has, for example, a central processing unit (CPU). Alternatively, the control unit 102 may also have a general-purpose computer.

The memory unit 104 stores data and computer programs. The data includes process recipe data. The process recipe data includes information indicating a plurality of process recipes. Each of the plurality of process recipes specifies the processing content and processing sequence of the substrate W.

The memory unit 104 includes a main memory device and an auxiliary memory device. The main memory device is, for example, a semiconductor memory. The auxiliary memory device is, for example, a semiconductor memory and/or a hard disk. The memory unit 104 may also include a removable medium. The control unit 102 executes the computer program stored in the memory unit 104 to perform substrate processing operations.

Next, the substrate processing unit 10 in the substrate processing apparatus 100 according to the first embodiment will be described with reference to Fig. 2. Fig. 2 is a schematic diagram of the substrate processing unit 10 in the substrate processing apparatus 100 according to the first embodiment.

2 , the substrate processing unit 10 includes a chamber 12 , a substrate holding unit 20 , a processing liquid supply unit 30 , a first cleaning liquid supply unit 40 , and a second cleaning liquid supply unit 50 . The chamber 12 accommodates a substrate W. The substrate holding unit 20 holds the substrate W.

The chamber 12 is a substantially box-shaped chamber having an inner space. The chamber 12 accommodates the substrate W. Here, the substrate processing apparatus 100 is a single-wafer type that processes the substrates W one by one, and accommodates the substrates W one by one in the chamber 12. The substrates W are accommodated in the chamber 12 and processed in the chamber 12. The chamber 12 accommodates at least a portion of each of the substrate holding portion 20 and the processing liquid supply portion 30 described below.

The substrate holding part 20 holds the substrate W. The substrate holding part 20 holds the substrate W horizontally in a manner such that the upper surface (front surface) Wa of the substrate W faces upward and the lower surface (back surface) Wb of the substrate W faces directly downward. In addition, the substrate holding part 20 rotates the substrate W while holding the substrate W. The substrate holding part 20 rotates the substrate W while holding the substrate W.

For example, the substrate holding part 20 may be a clamping type that clamps the end of the substrate W. Alternatively, the substrate holding part 20 may have any mechanism that holds the substrate W from the lower surface Wb. For example, the substrate holding part 20 may be a vacuum type. In this case, the substrate holding part 20 holds the substrate W horizontally by adsorbing the central part of the lower surface Wb of the substrate W, which is the non-device forming surface, to the upper surface. Alternatively, the substrate holding part 20 may combine a clamping type that makes a plurality of clamp pins contact the peripheral end surface of the substrate W with a vacuum type.

For example, the substrate holding portion 20 includes a rotating base 21 , a chuck member 22 , a shaft 23 , an electric motor 24 , and a housing 25 . The chuck member 22 is disposed on the rotating base 21 . The chuck member 22 chucks the substrate W. Typically, a plurality of chuck members 22 are disposed on the rotating base 21 .

The shaft 23 is a hollow shaft. The shaft 23 extends in the vertical direction along the rotation axis Ax. The rotation base 21 is coupled to the upper end of the shaft 23. The substrate W is placed on the rotation base 21.

The rotating base 21 is in the shape of a disk and supports the substrate W horizontally. The shaft 23 extends downward from the center of the rotating base 21. The electric motor 24 applies a rotational force to the shaft 23. The electric motor 24 rotates the substrate W and the rotating base 21 around the rotation axis Ax by rotating the shaft 23 in the rotation direction. The housing 25 surrounds the shaft 23 and the electric motor 24.

The processing liquid supply unit 30 supplies the processing liquid to the substrate W. Typically, the processing liquid supply unit 30 supplies the processing liquid to the upper surface Wa of the substrate W. At least a portion of the processing liquid supply unit 30 is accommodated in the chamber 12 .

The treatment liquid may also include a so-called chemical solution. The chemical solution may include hydrofluoric acid, for example. For example, the hydrofluoric acid may be heated to a temperature of 40°C or higher and 70°C or lower, or may be heated to a temperature of 50°C or higher and 60°C or lower. However, the hydrofluoric acid may not be heated. Furthermore, the chemical solution may include water or phosphoric acid.

Furthermore, the chemical solution may also include hydrogen peroxide. In addition, the chemical solution may also include SC1 (ammonia-hydrogen peroxide mixture), SC2 (hydrochloric acid-hydrogen peroxide mixture) or aqua regia (a mixture of concentrated hydrochloric acid and concentrated nitric acid). In the first embodiment, the processing liquid supply unit 30 supplies SC1 to the substrate W.

The processing liquid supply unit 30 includes a pipe 32, a nozzle 34 and a valve 36. The nozzle 34 sprays the processing liquid onto the upper surface Wa of the substrate W. The nozzle 34 can spray the processing liquid onto the central part of the substrate W, or spray the processing liquid onto the area between the central part and the peripheral part of the substrate W. The nozzle 34 has a nozzle and sprays the processing liquid from the nozzle. The nozzle 34 is connected to the pipe 32. The processing liquid is supplied to the pipe 32 from the supply source. The valve 36 opens and closes the flow path in the pipe 32. The nozzle 34 is preferably configured to be movable relative to the substrate W. The nozzle 34 can move in the horizontal direction and/or the vertical direction following the moving mechanism controlled by the control unit 102. Furthermore, in this specification, it should be noted that the moving mechanism is omitted to avoid making the diagram too complicated.

The valve 36 adjusts the opening of the pipe 32 to adjust the flow rate of the treatment liquid supplied to the pipe 32. Specifically, the valve 36 includes: a valve body (not shown) having a valve seat disposed therein; a valve body that opens and closes the valve seat; and an actuator (not shown) that moves the valve body between an open position and a closed position.

The first cleaning liquid supply unit 40 supplies the cleaning liquid to the upper surface Wa of the substrate W. At least a portion of the first cleaning liquid supply unit 40 is accommodated in the chamber 12. The cleaning liquid includes, for example, ozone water and hydrogen water.

The first cleaning liquid supply unit 40 includes a pipe 42, a nozzle 44 and a valve 46. The nozzle 44 sprays cleaning liquid onto the upper surface Wa of the substrate W. The nozzle 44 can spray the cleaning liquid onto the central portion of the substrate W, or spray the cleaning liquid onto the area between the central portion and the peripheral portion of the substrate W. The nozzle 44 has a nozzle and sprays the cleaning liquid from the nozzle. The nozzle 44 is connected to the pipe 42. Cleaning liquid is supplied to the pipe 42 from a supply source. The valve 46 opens and closes the flow path in the pipe 42. The nozzle 44 is preferably configured to be movable relative to the substrate W. The nozzle 44 can move in the horizontal direction and/or the vertical direction following a moving mechanism controlled by the control unit 102. The nozzle 44 is an example of the "first nozzle" of the present invention. The valve 46 is an example of the "switching valve" of the present invention.

The nozzle 44 supplies at least one of ozone water and hydrogen water to the upper surface Wa of the substrate W. In the first embodiment, the nozzle 44 can supply ozone water and hydrogen water to the upper surface Wa of the substrate W.

The valve 46 adjusts the opening of the pipe 42 to adjust the flow rate of the cleaning fluid supplied to the pipe 42. Specifically, the valve 46 includes: a valve body (not shown) having a valve seat disposed therein; a valve body that opens and closes the valve seat; and an actuator (not shown) that moves the valve body between an open position and a closed position.

The second cleaning liquid supply unit 50 supplies the cleaning liquid to the lower surface Wb of the substrate W. At least a portion of the second cleaning liquid supply unit 50 is accommodated in the chamber 12 .

The second cleaning liquid supply unit 50 includes a pipe 52, a nozzle 54, and a valve 56. The nozzle 54 sprays the cleaning liquid toward the lower surface Wb of the substrate W. The nozzle 54 sprays the cleaning liquid, for example, toward the center of the substrate W. The nozzle 54 has a nozzle, and sprays the cleaning liquid from the nozzle. The nozzle 54 sprays the cleaning liquid, for example, toward the upward direction. The nozzle 54 is connected to the pipe 52. The cleaning liquid is supplied to the pipe 52 from the supply source. The valve 56 opens and closes the flow path in the pipe 52. Furthermore, the nozzle 54 can also spray gases such as inert gas in addition to spraying the cleaning liquid. In this case, a gas outlet may be provided on the outer peripheral surface of the nozzle 54, and the nozzle 54 may eject gas radially outward. The nozzle 54 is an example of the "second nozzle" of the present invention. The valve 56 is an example of the "switching valve" of the present invention.

The nozzle 54 supplies at least one of ozone water and hydrogen water to the lower surface Wb of the substrate W. In the first embodiment, the nozzle 54 can supply ozone water and hydrogen water to the lower surface Wb of the substrate W.

The valve 56 adjusts the opening of the pipe 52 to adjust the flow rate of the cleaning fluid supplied to the pipe 52. Specifically, the valve 56 includes: a valve body (not shown) having a valve seat disposed therein; a valve body that opens and closes the valve seat; and an actuator (not shown) that moves the valve body between an open position and a closed position.

The detailed structures of the first cleaning liquid supply unit 40 and the second cleaning liquid supply unit 50 will be described below.

The substrate processing device 100 further includes a shield 80. The shield 80 recovers the processing liquid scattered from the substrate W. The shield 80 is raised and lowered. For example, the shield 80 rises directly above the substrate W until it reaches the side of the substrate W while the processing liquid supply unit 30 supplies the processing liquid to the substrate W. In this case, the shield 80 recovers the processing liquid scattered from the substrate W due to the rotation of the substrate W. In addition, when the processing liquid supply unit 30, the first cleaning liquid supply unit 40 and the second cleaning liquid supply unit 50 supply the processing liquid to the substrate W, the shield 80 descends from the side of the substrate W to the side directly below. Specifically, the substrate processing device 100 includes a lifting mechanism (not shown) for lifting and lowering the shield 80. The lifting mechanism includes, for example, an actuator (not shown) and/or a motor for lifting and lowering the shield 80.

In the first embodiment, the shield 80 includes a first shield 81 and a second shield 82 disposed radially outwardly of the first shield 81. The first shield 81 and the second shield 82 can be individually moved in the up-down direction by a moving mechanism (not shown).

As described above, the control device 101 includes the control unit 102 and the memory unit 104. The control unit 102 controls the substrate holding unit 20, the processing liquid supply unit 30, the first cleaning liquid supply unit 40, the second cleaning liquid supply unit 50 and/or the shield 80. In one example, the control unit 102 controls the electric motor 24 and the valve 36.

The substrate processing device 100 of the present embodiment can be preferably used to manufacture semiconductor devices provided with semiconductors. Typically, in a semiconductor device, a conductive layer and an insulating layer are stacked on a substrate. When manufacturing semiconductor devices, the substrate processing device 100 can be preferably used to clean and/or process (e.g., etching, property change, etc.) the conductive layer and/or the insulating layer. In addition, the substrate processing device 100 can be preferably used to remove the insulating layer (e.g., anti-etching layer).

2 , the processing liquid supply unit 30 can supply one processing liquid to the substrate W, but the processing liquid supply unit 30 may also supply a plurality of processing liquids to the substrate W. For example, the processing liquid supply unit 30 may also include a plurality of pipes 32 , a plurality of nozzles 34 , and a plurality of valves 36 .

Next, the piping structure of the substrate processing device 100 will be described with reference to FIG3. FIG3 is a schematic diagram for describing the piping structure of the substrate processing device 100. Furthermore, in FIG3, the processing liquid supply unit 30 is omitted for the sake of simplification. It can be understood from FIG1 and FIG2 that it is preferable that the substrate processing device 100 has a plurality of substrate processing units 10 and can process the substrate W using a plurality of processing liquids. However, here, in order to avoid an overly complicated description, a form of supplying one processing liquid to one substrate processing unit 10 is described.

As shown in FIG3 , the substrate processing device 100 includes an electrolysis unit 310, an ozone water tank 320, and a hydrogen water tank 330. The electrolysis unit 310 electrolyzes pure water to generate ozone water and hydrogen water. Ozone water and hydrogen water are cleaning liquids for cleaning substrate W. Ozone water, for example, removes particles including metals and particles including organic matter. Hydrogen water, for example, has a reducing effect on the metal film of substrate W. In other words, hydrogen water, for example, has an anti-corrosion effect on the surface of substrate W. In addition, hydrogen water, for example, removes microparticles. Hydrogen water, for example, can remove microparticles smaller than metal impurities and organic matter.

The electrolysis unit 310 has an anode, a cathode, and a diaphragm such as an ion exchange membrane. By applying a voltage between the anode and the cathode, ozone water is generated on the anode side and hydrogen water is generated on the cathode side. As the electrolysis unit 310, a known electrolysis device can be used.

The ozone water tank 320 contains ozone water generated by the electrolysis unit 310. The hydrogen water tank 330 contains hydrogen water generated by the electrolysis unit 310. In the first embodiment, the ozone water in the ozone water tank 320 is composed of pure water dissolved with ozone gas, for example, without containing hydrochloric acid, etc. In addition, in the first embodiment, the hydrogen water in the hydrogen water tank 330 is composed of pure water dissolved with hydrogen gas, for example, without containing ammonia, etc.

The substrate processing apparatus 100 includes a pipe 311 and a valve 312. The pipe 311 is connected to the electrolysis unit 310. Pure water is supplied from a supply source to the pipe 311. The pipe 311 supplies pure water to the electrolysis unit 310.

The valve 312 is disposed in the pipe 311. The valve 312 opens and closes the flow path in the pipe 311. The valve 312 adjusts the opening of the pipe 311 to adjust the flow rate of pure water supplied to the pipe 311. Specifically, the valve 312 includes: a valve body (not shown) having a valve seat disposed therein; a valve body that opens and closes the valve seat; and an actuator (not shown) that moves the valve body between an open position and a closed position.

The substrate processing apparatus 100 includes a flow meter 328, a pipe 329, a flow meter 338, and a pipe 339. The pipe 329 connects the electrolysis section 310 and the ozone water tank 320. The pipe 329 supplies the ozone water generated by the electrolysis section 310 to the ozone water tank 320. The flow meter 328 is disposed on the pipe 329. The flow meter 328 measures the flow rate of the ozone water passing through the pipe 329. The pipe 339 connects the electrolysis section 310 and the hydrogen water tank 330. The pipe 339 supplies the hydrogen water generated by the electrolysis section 310 to the hydrogen water tank 330. The flow meter 338 is disposed on the pipe 339. The flow meter 338 measures the flow rate of the hydrogen water passing through the pipe 339.

The substrate processing apparatus 100 includes a pipe 321 and a valve 322. The pipe 321 is connected to an ozone water tank 320. Pure water is supplied from a supply source to the pipe 321. The pipe 321 supplies pure water to the ozone water tank 320.

The valve 322 is disposed in the pipe 321. The valve 322 opens and closes the flow path in the pipe 321. The valve 322 adjusts the opening of the pipe 321 to adjust the flow rate of pure water supplied to the pipe 321. The valve 322 has the same structure as the valve 312, for example.

The substrate processing apparatus 100 includes a pipe 331 and a valve 332. The pipe 331 is connected to a hydrogen water tank 330. Pure water is supplied from a supply source to the pipe 331. The pipe 331 supplies pure water to the hydrogen water tank 330.

The valve 332 is disposed in the pipe 331. The valve 332 opens and closes the flow path in the pipe 331. The valve 332 adjusts the opening of the pipe 331 to adjust the flow rate of pure water supplied to the pipe 331. The valve 332 has the same structure as the valve 312, for example.

The substrate processing apparatus 100 includes a first concentration meter 325. The first concentration meter 325 is disposed in the ozone water tank 320. The first concentration meter 325 measures the concentration of the ozone water in the ozone water tank 320. The first concentration meter 325 is not particularly limited, and may include, for example, a pH meter for measuring the pH of the ozone water, an oxygen meter for measuring the oxygen concentration of the ozone water, or an ORP (Oxidation-reduction potential) meter.

The concentration of the ozone water in the ozone water tank 320 is adjusted to a specified concentration. The concentration of the ozone water in the ozone water tank 320 is lower than the concentration of the ozone water supplied from the electrolysis unit 310 to the pipe 329. Furthermore, the substrate processing apparatus 100 supplies pure water to the ozone water tank 320 based on the measurement result of the first concentration meter 325.

The substrate processing apparatus 100 includes a second concentration meter 335 and a bubble generating device 336. The second concentration meter 335 is disposed in the hydrogen water tank 330. The second concentration meter 335 measures the concentration of hydrogen water in the hydrogen water tank 330. The second concentration meter 335 is not particularly limited, and may include, for example, a pH meter for measuring the pH of hydrogen water, a hydrogen meter for measuring the hydrogen concentration of hydrogen water, or an ORP (oxidation reduction potential) meter.

The concentration of hydrogen water in the hydrogen water tank 330 is adjusted to a specified concentration. The concentration of hydrogen water in the hydrogen water tank 330 is lower than the concentration of hydrogen water supplied from the electrolysis unit 310 to the pipe 339. Furthermore, the substrate processing apparatus 100 supplies pure water to the hydrogen water tank 330 based on the measurement result of the second concentration meter 335.

For example, when the metal film formed on the substrate W includes cobalt, the hydrogen water in the hydrogen water tank 330 is adjusted to a pH greater than 7, and may be adjusted to a pH greater than 10. Furthermore, when the metal film formed on the substrate W includes cobalt, the hydrogen water in the hydrogen water tank 330 is adjusted to a redox potential of -0.5 V or less, and may be adjusted to a redox potential of -0.75 V or less. Furthermore, for example, when the metal film formed on the substrate W includes copper, the hydrogen water in the hydrogen water tank 330 is adjusted to a pH greater than 7. Furthermore, when the metal film formed on the substrate W includes copper, the hydrogen water in the hydrogen water tank 330 is adjusted to a redox potential of -0.4 V or less. With the above configuration, corrosion of the metal film formed on the substrate W can be effectively suppressed by hydrogen water.

The bubble generating device 336 generates bubbles in the hydrogen water in the hydrogen water tank 330. The bubble generating device 336 is not particularly limited, and for example includes an ultrasonic generating device. The ultrasonic generating device, for example, has an ultrasonic vibrator. When the bubble generating device 336 is driven, micron-sized bubbles are generated in the hydrogen water.

The substrate processing apparatus 100 includes ozone water pipes 910a and 910b, hydrogen water pipes 920a and 920b, and valves 46 and 56 described below. The ozone water pipes 910a and 910b supply the ozone water in the ozone water tank 320 to at least one of the nozzles 44 and 54. The hydrogen water pipes 920a and 920b supply the hydrogen water in the hydrogen water tank 330 to at least one of the nozzles 44 and 54. The valves 46 and 56 switch the cleaning liquid supplied to at least one of the nozzles 44 and 54.

In the first embodiment, the ozone water pipe 910a supplies the ozone water of the ozone water tank 320 to the nozzle 44. The ozone water pipe 910b supplies the ozone water of the ozone water tank 320 to the nozzle 54. The hydrogen water pipe 920a supplies the hydrogen water of the hydrogen water tank 330 to the nozzle 44. The hydrogen water pipe 920b supplies the hydrogen water of the hydrogen water tank 330 to the nozzle 54. The valve 46 switches the cleaning liquid supplied to the nozzle 44. The valve 56 switches the cleaning liquid supplied to the nozzle 54. The configuration of the ozone water pipes 910a, 910b, and the hydrogen water pipes 920a and 920b will be described below.

The substrate processing apparatus 100 includes a pipe 341, a heater 342, a pump 343, a filter 344, a flow meter 345, and a valve 346. The pipe 341 is connected to the ozone water tank 320. The pipe 341 forms a flow path for supplying ozone water from the ozone water tank 320 to the substrate processing unit 10. In the first embodiment, the pipe 341 connects the ozone water tank 320 and the processing liquid tank 120. In the first embodiment, the pipe 341 connects the ozone water tank 320 and the first cleaning liquid supply part 40. In addition, the pipe 341 connects the ozone water tank 320 and the second cleaning liquid supply part 50. The heater 342, the pump 343, the filter 344, the flow meter 345, and the valve 346 are installed in the pipe 341.

The heater 342 heats the liquid passing through the pipe 341. In the first embodiment, the heater 342 heats the ozone water passing through the pipe 341 to a specified temperature.

The pump 343 transports the ozone water in the ozone water tank 320 toward the substrate processing unit 10 .

The filter 344 is mounted on the pipe 341. The filter 344 can be attached to and detached from the pipe 341. When the filter 344 is mounted on the pipe 341, the ozone water passes through the filter 344. On the other hand, the filter 344 can be removed from the pipe 341. Therefore, if the filter 344 is deteriorated, the filter 344 can be replaced.

The filter 344 filters the cleaning liquid passing through the pipe 341. The filter 344 has, for example, a porous shape. The filter 344 allows the liquid component of the cleaning liquid to pass through. On the other hand, the filter 344 captures particles contained in the cleaning liquid. Furthermore, the particles are, for example, solid. The particles are not particularly limited, and include, for example, resin or metal.

The flow meter 345 measures the flow rate of the ozone water passing through the pipe 341.

The valve 346 opens and closes the flow path in the pipe 341. The valve 346 adjusts the opening of the pipe 341 to adjust the flow rate of the ozone water passing through the pipe 341. The valve 346 has the same structure as the valve 312, for example.

The substrate processing apparatus 100 includes a pipe 351, a heater 352, a pump 353, a filter 354, a flow meter 355, and a valve 356. The pipe 351 is connected to the hydrogen water tank 330. The pipe 351 forms a flow path for supplying hydrogen water from the hydrogen water tank 330 to the substrate processing unit 10. In the first embodiment, the pipe 351 connects the hydrogen water tank 330 and the processing liquid tank 120. In the first embodiment, the pipe 351 connects the hydrogen water tank 330 and the first cleaning liquid supply unit 40. In addition, the pipe 351 connects the hydrogen water tank 330 and the second cleaning liquid supply unit 50. A heater 352 , a pump 353 , a filter 354 , a flow meter 355 , and a valve 356 are installed in the pipe 351 .

The heater 352 heats the liquid passing through the pipe 351. In the first embodiment, the heater 352 heats the hydrogen water passing through the pipe 351 to a specified temperature.

The pump 353 transports the hydrogen water in the hydrogen water tank 330 toward the substrate processing unit 10 .

The filter 354 is mounted on the pipe 351. The filter 354 can be attached to and detached from the pipe 351. When the filter 354 is mounted on the pipe 351, hydrogen water passes through the filter 354. On the other hand, the filter 354 can be removed from the pipe 351. Therefore, if the filter 354 is deteriorated, the filter 354 is replaced. The filter 354 is configured similarly to the filter 344, for example.

The flow meter 355 measures the flow rate of hydrogen water passing through the pipe 351.

The valve 356 opens and closes the flow path in the pipe 351. The valve 356 adjusts the opening of the pipe 351 to adjust the flow rate of hydrogen water passing through the pipe 351. The valve 356 has the same structure as the valve 312, for example.

The substrate processing apparatus 100 includes a waste liquid tank 360 , a pipe 361 a , a pipe 361 b , a valve 362 a , and a valve 362 b . The waste liquid tank 360 receives liquid discharged from the ozone water tank 320 and the hydrogen water tank 330 .

The pipe 361a connects the ozone water tank 320 and the waste liquid tank 360. The pipe 361a discharges the liquid in the ozone water tank 320 to the waste liquid tank 360.

The valve 362a is disposed in the pipe 361a. The valve 362a opens and closes the flow path in the pipe 361a. The valve 362a adjusts the opening of the pipe 361a to adjust the flow rate of the liquid passing through the pipe 361a. The valve 362a has the same structure as the valve 312, for example.

The pipe 361 b connects the hydrogen water tank 330 and the waste liquid tank 360 . The pipe 361 b discharges the liquid in the hydrogen water tank 330 to the waste liquid tank 360 .

The valve 362b is disposed in the pipe 361b. The valve 362b opens and closes the flow path in the pipe 361b. The valve 362b adjusts the opening of the pipe 361b to adjust the flow rate of the liquid passing through the pipe 361b. The valve 362b has the same structure as the valve 312, for example.

In the first embodiment, the substrate processing apparatus 100 further includes a reflux pipe 61 , a reflux pipe 62 , a valve 63 , and a valve 64 .

The return pipe 61 connects the pipe 341 and the ozone water tank 320. The return pipe 61 returns the ozone water from the pipe 341 to the ozone water tank 320.

The valve 63 is disposed in the return pipe 61. The valve 63 opens and closes the flow path in the return pipe 61. The valve 63 adjusts the opening of the return pipe 61 to adjust the flow rate of the ozone water passing through the return pipe 61. The valve 63 has the same structure as the valve 312, for example.

The return pipe 62 connects the pipe 351 and the hydrogen water tank 330. The return pipe 62 returns the hydrogen water from the pipe 351 to the hydrogen water tank 330.

The valve 64 is disposed in the return pipe 62. The valve 64 opens and closes the flow path in the return pipe 62. The valve 64 adjusts the opening of the return pipe 62 to adjust the flow rate of hydrogen water passing through the return pipe 62. The valve 64 has the same structure as the valve 312, for example.

Next, the first cleaning liquid supply unit 40 and the second cleaning liquid supply unit 50 will be further described.

The piping 42 of the first cleaning liquid supply unit 40 includes a first piping 42a, a second piping 42b, and a common piping 42c. The first piping 42a connects the piping 341 and the valve 46. The first piping 42a supplies ozone water from the piping 341 to the valve 46. The second piping 42b connects the piping 351 and the valve 46. The second piping 42b supplies hydrogen water from the piping 351 to the valve 46.

The common pipe 42c supplies ozone water and hydrogen water from the valve 46 to the nozzle 44. In the first embodiment, the common pipe 42c supplies ozone water and hydrogen water to the nozzle 44 separately. That is, the common pipe 42c does not supply ozone water and hydrogen water to the nozzle 44 at the same time. The common pipe 42c supplies only one of ozone water and hydrogen water to the nozzle 44, or supplies only the other of ozone water and hydrogen water to the nozzle 44.

The valve 46 supplies ozone water and hydrogen water to the common pipe 42c. In the first embodiment, the valve 46 supplies ozone water and hydrogen water to the common pipe 42c separately. That is, the valve 46 does not supply ozone water and hydrogen water to the common pipe 42c at the same time. The valve 46 supplies only one of ozone water and hydrogen water to the common pipe 42c, or only the other of ozone water and hydrogen water to the common pipe 42c.

Specifically, the valve 46 includes, for example, a multi-valve. The multi-valve includes, for example, a plurality of valves connected to a plurality of pipes, respectively. The valve 46 can set at least one flow path in the first pipe 42a and the second pipe 42b to an open state. In the first embodiment, the valve 46 can set one flow path in the first pipe 42a and the second pipe 42b to an open state. That is, in the first embodiment, the valve 46 can set the first pipe 42a and the second pipe 42b to an open state and a closed state, to a closed state and an open state, or to a closed state and a closed state.

The piping 52 of the second cleaning liquid supply unit 50 includes a first piping 52a, a second piping 52b, and a common piping 52c. The first piping 52a connects the piping 341 and the valve 56. The first piping 52a supplies ozone water from the piping 341 to the valve 56. The second piping 52b connects the piping 351 and the valve 56. The second piping 52b supplies hydrogen water from the piping 351 to the valve 56.

The common pipe 52c supplies ozone water and hydrogen water from the valve 56 to the nozzle 54. In the first embodiment, the common pipe 52c supplies ozone water and hydrogen water to the nozzle 54 separately. That is, the common pipe 52c does not supply ozone water and hydrogen water to the nozzle 54 at the same time. The common pipe 52c supplies only one of ozone water and hydrogen water to the nozzle 54, or supplies only the other of ozone water and hydrogen water to the nozzle 54.

The valve 56 supplies ozone water and hydrogen water to the common pipe 52c. In the first embodiment, the valve 56 supplies ozone water and hydrogen water to the common pipe 52c separately. That is, the valve 56 does not supply ozone water and hydrogen water to the common pipe 52c at the same time. The valve 56 supplies only one of ozone water and hydrogen water to the common pipe 52c, or only the other of ozone water and hydrogen water to the common pipe 52c.

Specifically, the valve 56 includes, for example, a multi-valve. The multi-valve includes, for example, a plurality of valves connected to a plurality of pipes, respectively. The valve 56 can set at least one flow path in the first pipe 52a and the second pipe 52b to an open state. In the first embodiment, the valve 56 can set one flow path in the first pipe 52a and the second pipe 52b to an open state. That is, in the first embodiment, the valve 56 can set the first pipe 52a and the second pipe 52b to an open state and a closed state, to a closed state and an open state, or to a closed state and a closed state.

In the first embodiment, the nozzle 44 and the nozzle 54 simultaneously supply the cleaning liquid to the substrate W. Specifically, the control unit 102 simultaneously sets the valve 46 and the valve 56 to the open state to supply the cleaning liquid to the nozzle 44 and the nozzle 54. Furthermore, in this embodiment, the simultaneous supply of liquid to the substrate W means that the time of supplying liquid to the substrate W overlaps. That is, the simultaneous supply of liquid to the substrate W does not mean that the liquid is started to be supplied to the substrate W at the same time. Moreover, the simultaneous supply of liquid to the substrate W does not mean that the liquid is stopped to be supplied to the substrate W at the same time.

Furthermore, at least one of the nozzles 44 and 54 supplies ozone water and hydrogen water to the substrate W. Specifically, the control unit 102 controls at least one of the valves 46 and 56 to supply both ozone water and hydrogen water to the substrate W.

Furthermore, in the first embodiment, the nozzle 44 supplies one of ozone water and hydrogen water to the upper surface Wa of the substrate W, and at the same time, the nozzle 54 supplies the other of ozone water and hydrogen water to the lower surface Wb of the substrate W. Specifically, in the first embodiment, the nozzle 44 supplies hydrogen water to the upper surface Wa of the substrate W, and at the same time, the nozzle 54 supplies ozone water to the lower surface Wb of the substrate W.

In the first embodiment, the pipe 341, the first pipe 42a and the common pipe 42c constitute the ozone water pipe 910a for supplying the ozone water in the ozone water tank 320 to the nozzle 44. Also, the pipe 341, the first pipe 52a and the common pipe 52c constitute the ozone water pipe 910b for supplying the ozone water in the ozone water tank 320 to the nozzle 54.

The pipe 351, the second pipe 42b and the common pipe 42c form a hydrogen water pipe 920a for supplying hydrogen water from the hydrogen water tank 330 to the nozzle 44. The pipe 351, the second pipe 52b and the common pipe 52c form a hydrogen water pipe 920b for supplying hydrogen water from the hydrogen water tank 330 to the nozzle 54.

In the first embodiment, as described above, the nozzles 44 and 54 supply the ozone water from the ozone water tank 320 and the hydrogen water from the hydrogen water tank 330 to the substrate W. Here, the ozone water and the hydrogen water are water-based liquids, and therefore, unlike the case where ammonia water or the like is used as the cleaning liquid, it is possible to suppress the cleaning liquid from becoming particles in the subsequent drying process. Therefore, it is possible to suppress the substrate W from being contaminated by particles.

Furthermore, by using ozone water and hydrogen water as cleaning liquid, the amount of liquid used can be reduced compared to the case where ammonia water or other liquid is used as cleaning liquid. In the first embodiment, the amount of liquid used when cleaning the substrate W can be reduced to zero.

Furthermore, as described above, the substrate processing apparatus 100 includes: the nozzle 44 for supplying at least one of ozone water and hydrogen water to the upper surface Wa of the substrate W; and the nozzle 54 for supplying at least the other of ozone water and hydrogen water to the lower surface Wb of the substrate W. Therefore, for example, corrosion of the upper surface Wa or the lower surface Wb of the substrate W can be suppressed by hydrogen water, and particles on the lower surface Wb of the substrate W can be removed by ozone water.

As described above, the nozzles 44 and 54 simultaneously supply the cleaning liquid to the substrate W. Therefore, it is possible to suppress one of the ozone water and the hydrogen water from circling around the lower surface Wb of the substrate W or the other of the ozone water and the hydrogen water from circling around the upper surface Wa of the substrate W.

Furthermore, as described above, at least one of the nozzles 44 and 54 supplies ozone water and hydrogen water to the substrate W. Therefore, at least one of the upper surface Wa and the lower surface Wb of the substrate W can be cleaned by both ozone water and hydrogen water. Furthermore, since the cleaning liquid is switched by the valve 46 (or the valve 56), for example, it is not necessary to separately provide a nozzle for supplying ozone water to the upper surface Wa of the substrate W and a nozzle for supplying hydrogen water. Therefore, it is possible to suppress an increase in the number of parts and to suppress the complexity of the device structure.

Furthermore, as described above, the nozzle 44 supplies hydrogen water to the upper surface Wa of the substrate W, and the nozzle 54 supplies ozone water to the lower surface Wb of the substrate W. Therefore, it is possible to suppress corrosion of the upper surface Wa of the substrate W and remove particles from the lower surface Wb of the substrate W. This configuration is particularly effective when cleaning a substrate W having a metal film formed on the upper surface Wa.

Furthermore, as described above, the bubble generating device 336 for generating bubbles in hydrogen water is provided in the substrate processing apparatus 100. Therefore, cleaning can be performed by the chemical action generated by hydrogen water and the physical action of bubble generation, thereby improving the cleaning power.

Next, a substrate processing apparatus 100 according to a first embodiment will be described with reference to Figures 1 to 4. Figure 4 is a block diagram of the substrate processing apparatus 100 according to the first embodiment.

As shown in Fig. 4, the control device 101 controls various operations of the substrate processing apparatus 100. The control device 101 controls the carrier robot IR, the center robot CR, the substrate holding unit 20, the processing liquid supply unit 30, the first cleaning liquid supply unit 40, the second cleaning liquid supply unit 50, the heaters 342, 352, the pumps 343, 353, and various valves. Specifically, the control device 101 controls the carrier robot IR, the central robot CR, the substrate holding part 20, the processing liquid supply part 30, the first cleaning liquid supply part 40, the second cleaning liquid supply part 50, the heaters 342, 352, the pumps 343, 353 and the various valves by sending control signals to the carrier robot IR, the central robot CR, the substrate holding part 20, the processing liquid supply part 30, the first cleaning liquid supply part 40, the second cleaning liquid supply part 50, the heaters 342, 352, the pumps 343, 353 and the various valves.

More specifically, the control unit 102 controls the carrier robot IR to transfer the substrate W via the carrier robot IR.

The control unit 102 controls the central robot CR to transfer substrates W. For example, the central robot CR receives unprocessed substrates W and carries the substrates W into any one of the plurality of substrate processing units 10. Also, the central robot CR receives processed substrates W from the substrate processing unit 10 and carries the substrates W out.

The control unit 102 controls the substrate holding unit 20 to control the start of rotation of the substrate W, change of the rotation speed, and stop of the rotation of the substrate W. For example, the control unit 102 can control the substrate holding unit 20 to change the rotation speed of the substrate holding unit 20. Specifically, the control unit 102 can change the rotation speed of the substrate W by changing the rotation speed of the electric motor 24 of the substrate holding unit 20.

The control unit 102 can control valves 36, 46, 56, 63, 64, 312, 322, 332, 346, 356, 362a, and 362b to switch the states of valves 36, 46, 56, 63, 64, 312, 322, 332, 346, 356, 362a, and 362b to an open state or a closed state. Specifically, the control unit 102 can allow or block the liquid in the pipe 32 by setting the valve 36 to an open state or a closed state. Similarly, the control unit 102 can allow or block the liquid in the pipes 42, 52, the return pipes 61, 62, the pipes 311, 321, 331, 341, 351, 361a and 361b by setting the valves 46, 56, 63, 64, 312, 322, 332, 346, 356, 362a and 362b to an open state or a closed state.

The control unit 102 controls the heaters 342 and 352 to heat the liquid passing through the pipes 341 and 351.

The control unit 102 controls the pumps 343 and 353 to send the liquid in the ozone water tank 320 and the hydrogen water tank 330 to the downstream side. Specifically, the control unit 102 drives the pump 343 to send the ozone water in the ozone water tank 320 toward the nozzles 44 and 54. In addition, the control unit 102 drives the pump 353 to send the hydrogen water in the hydrogen water tank 330 toward the nozzles 44 and 54.

In the first embodiment, as described above, the control device 101 controls various operations of the substrate processing apparatus 100. The control device 101 controls the electrolysis unit 310 and the bubble generating device 336. Specifically, the control device 101 controls the electrolysis unit 310 and the bubble generating device 336 by sending control signals to the electrolysis unit 310 and the bubble generating device 336.

More specifically, the control unit 102 controls the electrolysis unit 310 to electrolyze pure water to generate ozone water and hydrogen water. The generated ozone water and hydrogen water are supplied to the ozone water tank 320 and the hydrogen water tank 330, respectively.

The control unit 102 controls the bubble generating device 336 to generate bubbles in the hydrogen water tank 330 .

In addition, the measurement results of the flow meters 328 , 338 , 345 , 355 , the first concentration meter 325 , and the second concentration meter 335 are sent to the control unit 102 .

Next, the substrate processing method of the substrate processing apparatus 100 of the first embodiment is described with reference to FIG. 5 . FIG. 5 is a flow chart showing the substrate processing method of the substrate processing apparatus 100 of the first embodiment. The substrate processing method of the substrate processing apparatus 100 includes steps S1 to S7. Steps S1 to S7 are executed by the control unit 102. Furthermore, step S1 is an example of the "generation process" of the present invention. Step S6 is an example of the "cleaning process" of the present invention.

As shown in FIG5 , in step S1, the control unit 102 electrolyzes pure water to generate ozone water and hydrogen water as cleaning liquid. Specifically, the control unit 102 supplies pure water to the electrolysis unit 310 by switching the valve 312 from the closed state to the open state. Under the control of the control unit 102, the electrolysis unit 310 electrolyzes pure water to generate ozone water and hydrogen water. The generated ozone water is stored in the ozone water tank 320 through the piping 329. Similarly, the generated hydrogen water is stored in the hydrogen water tank 330 through the piping 339.

Next, in step S2, the control unit 102 supplies pure water to the ozone water tank 320. Specifically, the control unit 102 controls the valve 322 based on the concentration of the ozone water in the ozone water tank 320 and supplies pure water to the ozone water tank 320. At this time, the ozone water in the ozone water tank 320 is adjusted to a concentration lower than the concentration of the ozone water supplied from the electrolysis unit 310 to the pipe 329.

Next, in step S3, the control unit 102 supplies pure water to the hydrogen water tank 330. Specifically, the control unit 102 controls the valve 332 based on the concentration of the hydrogen water in the hydrogen water tank 330 and supplies pure water to the hydrogen water tank 330. At this time, the hydrogen water in the hydrogen water tank 330 is adjusted to a concentration lower than the concentration of the hydrogen water supplied from the electrolysis unit 310 to the pipe 339.

Next, in step S4, the control unit 102 generates bubbles in the hydrogen water in the hydrogen water tank 330. Specifically, under the control of the control unit 102, the bubble generating device 336 generates bubbles in the hydrogen water in the hydrogen water tank 330.

Next, in step S5, the control unit 102 processes the substrate W. Specifically, the control unit 102 rotates the substrate W via the substrate holding unit 20. Thus, the substrate W starts to rotate. The rotation speed of the substrate W is not particularly limited, and is, for example, 300 rpm or more and 800 rpm or less.

Next, the control unit 102 supplies the processing liquid from the nozzle 34 to the upper surface Wa of the substrate W, which is rotated by the substrate holding unit 20. At this time, the control unit 102 supplies ozone water from the nozzle 54 to the lower surface Wb of the substrate W. That is, the processing liquid and the ozone water are supplied to the substrate W at the same time. Furthermore, in the first embodiment, the control unit 102 supplies SC1 from the nozzle 34 to the upper surface Wa of the substrate W.

When a specified time has passed since the processing liquid was supplied to the substrate W, the control unit 102 stops supplying the processing liquid and ozone water. In the first embodiment, ozone water is also supplied to the lower surface Wb of the substrate W in the next step S6, so the supply of ozone water may not be stopped.

Next, in step S6, the control unit 102 supplies at least one of ozone water and hydrogen water to the upper surface Wa of the substrate W, and supplies at least the other of ozone water and hydrogen water to the lower surface Wb of the substrate W. In the first embodiment, the control unit 102 supplies hydrogen water to the upper surface Wa of the substrate W, and supplies ozone water to the lower surface Wb of the substrate W. Specifically, the control unit 102 supplies hydrogen water from the nozzle 44 to the upper surface Wa of the substrate W rotated by the substrate holding unit 20. At this time, the control unit 102 supplies ozone water from the nozzle 54 to the lower surface Wb of the substrate W. That is, hydrogen water and ozone water are supplied to the substrate W at the same time. Furthermore, the rotation speed of the substrate W in step S6 is not particularly limited, for example, it is greater than 300 rpm and less than 1200 rpm.

Furthermore, when a designated time has passed after the start of supplying hydrogen water to the substrate W, the control unit 102 stops supplying hydrogen water and ozone water.

Next, in step S7, the control unit 102 dries the substrate W. Specifically, the control unit 102 makes the substrate W rotate at a higher speed than the rotation speed in step S6 by the substrate holding unit 20. Thus, hydrogen water and ozone water are discharged from the substrate W. The discharged hydrogen water and ozone water are received by the first shield 81, for example. In addition, the rotation speed of the substrate W in step S7 is not particularly limited, and is, for example, 1500 rpm or more and 2500 rpm or less.

Furthermore, the control unit 102 stops the rotation of the substrate W when a specified time has passed after the rotation speed of the substrate W has been increased.

The processing of the substrate W is completed in the above manner. Furthermore, in the first embodiment, an example is shown in which the second pure water supply process (step S3) is performed after the first pure water supply process (step S2), but the present invention is not limited to this. For example, the first pure water supply process may be performed after the second pure water supply process, and the first pure water supply process and the second pure water supply process may be performed in parallel.

(Second embodiment) The substrate processing method of the substrate processing apparatus 100 of the second embodiment of the present invention is described with reference to FIG. 6. FIG. 6 is a flow chart showing the substrate processing method of the substrate processing apparatus 100 of the second embodiment. In the second embodiment, unlike the first embodiment, an example of switching the cleaning liquid supplied to the lower surface Wb of the substrate W in the cleaning process (step S6) is described. In the second embodiment, step S6 includes step S61 and step S62. In addition, the structure of the substrate processing apparatus 100 of the second embodiment is the same as that of the first embodiment.

As shown in FIG6 , steps S1 to S5 are the same as those in the first embodiment.

Next, in step S6, step S61 (first cleaning process) and step S62 (second cleaning process) are performed.

In step S61, the nozzle 44 supplies one of ozone water and hydrogen water to the upper surface Wa of the substrate W, and at the same time, the nozzle 54 supplies the other of ozone water and hydrogen water to the lower surface Wb of the substrate W. In the second embodiment, the nozzle 44 supplies hydrogen water to the upper surface Wa of the substrate W, and at the same time, the nozzle 54 supplies ozone water to the lower surface Wb of the substrate W. Specifically, the control unit 102 controls the valve 46 and the valve 56 to supply hydrogen water from the nozzle 44 to the upper surface Wa of the substrate W, and at the same time, to supply ozone water from the nozzle 54 to the lower surface Wb of the substrate W.

Furthermore, when a designated time has passed after the start of supplying hydrogen water to the substrate W, the control unit 102 proceeds to step S62.

Next, in step S62, the valve 56 switches the cleaning liquid supplied to the nozzle 54, whereby the nozzle 44 and the nozzle 54 simultaneously supply one of ozone water and hydrogen water to the substrate W. In the second embodiment, the valve 56 switches the cleaning liquid supplied to the nozzle 54 from ozone water to hydrogen water, whereby the nozzle 44 and the nozzle 54 simultaneously supply hydrogen water to the substrate W. Specifically, the control unit 102 controls the valve 56 to switch the cleaning liquid supplied to the nozzle 54 from ozone water to hydrogen water.

Furthermore, when a designated time has passed after the cleaning liquid supplied to the substrate W is switched, the control unit 102 stops supplying hydrogen water to the substrate W from the nozzle 44 and the nozzle 54 .

Then, step S7 is performed in the same manner as the first embodiment.

The processing of the substrate W is completed in the above manner.

The other substrate processing methods of the second embodiment are the same as those of the first embodiment.

In the second embodiment, as described above, the nozzle 44 supplies one of ozone water and hydrogen water to the upper surface Wa of the substrate W, and at the same time, the nozzle 54 supplies the other of ozone water and hydrogen water to the lower surface Wb of the substrate W. Thereafter, one of the valves 46 and 56 switches the cleaning liquid supplied to one of the nozzles 44 and 54, whereby the nozzles 44 and 55 simultaneously supply one of ozone water and hydrogen water to the substrate W. Therefore, the upper surface Wa and the lower surface Wb of the substrate W can be cleaned using the same cleaning liquid. Therefore, even in the case where the cleaning liquid circulates from the upper surface Wa to the lower surface Wb or circulates from the lower surface Wb to the upper surface Wa, it is possible to suppress adverse effects on the substrate W.

Specifically, in the second embodiment, the nozzle 44 supplies hydrogen water to the upper surface Wa of the substrate W, and at the same time, the nozzle 54 supplies ozone water to the lower surface Wb of the substrate W. Thereafter, the valve 56 switches the cleaning liquid supplied to the nozzle 54 from ozone water to hydrogen water, whereby the nozzle 44 and the nozzle 55 simultaneously supply hydrogen water to the substrate W. Therefore, the corrosion of the upper surface Wa and the lower surface Wb of the substrate W can be suppressed, and the adverse effect on the substrate W caused by the circling of the cleaning liquid can be suppressed.

The other effects of the second implementation method are the same as those of the first implementation method.

(Third embodiment) Referring to FIG. 7 , the substrate processing method of the substrate processing apparatus 100 of the third embodiment of the present invention is described. FIG. 7 is a flow chart showing the substrate processing method of the substrate processing apparatus 100 of the third embodiment. In the third embodiment, unlike the first and second embodiments, an example of switching the shield 80 that receives the cleaning liquid in the drying process (step S7) is described. In the third embodiment, step S7 includes step S71 and step S72. Furthermore, in the third embodiment, a part of the substrate processing method of the first embodiment shown in FIG. 5 is changed for description, but a part of the substrate processing method of the second embodiment shown in FIG. 6 may also be changed. The structure of the substrate processing apparatus 100 of the third embodiment is the same as that of the first embodiment.

As shown in FIG7 , steps S1 to S6 are the same as those of the first embodiment. Furthermore, in steps S5 and S6 , the chemical solution and the cleaning solution discharged from the substrate W are received by the first shield 81 .

Then, in step S7, step S71 (shield switching process) and step S72 (drying process) are performed.

In step S71, the control unit 102 switches the shield 80 that receives the cleaning liquid discharged from the substrate W. Specifically, the control unit 102 makes the rotation speed of the substrate W lower than the rotation speed of the substrate W in step S6. The rotation speed of the substrate W in step S71 is not particularly limited, for example, it is greater than 10 rpm and less than 100 rpm.

Next, the control unit 102 lowers the first shield 81 directly downward. At this time, the rotation speed of the substrate W is relatively low, so it is possible to prevent the cleaning liquid discharged from the substrate W from splashing on the first shield 81 and adhering to the substrate W or scattering around. Specifically, if the first shield 81 is lowered directly downward, the distance between the inner edge of the first shield 81 and the substrate W becomes narrower when the inner edge passes the side of the substrate W, so the cleaning liquid discharged from the substrate W hits the inner edge violently. Therefore, when the first shield 81 is lowered directly downward, the cleaning liquid discharged from the substrate W becomes easy to splash on the first shield 81 and adhering to the substrate W or scattering around. However, in the third embodiment, as described above, the rotation speed of the substrate W is relatively low, so it is possible to prevent the cleaning liquid discharged from the substrate W from splashing on the first shield 81 and adhering to the substrate W or scattering around.

Next, in step S72, the control unit 102 makes the rotation speed of the substrate W higher than the rotation speed of the substrate W in step S71. Thereby, the cleaning liquid discharged from the substrate W is received by the second shield 82. The rotation speed of the substrate W in step S72 is not particularly limited, but is preferably higher than the rotation speed of the substrate W in step S6. In the third embodiment, the rotation speed of the substrate W in step S72 is, for example, 1500 rpm or more and 2500 rpm or less.

Furthermore, when a designated time has passed after the rotation speed of the substrate W has been increased, the control unit 102 stops the rotation of the substrate W.

The processing of the substrate W is completed in the above manner.

The other substrate processing methods of the third embodiment are the same as those of the first embodiment.

In the third embodiment, as described above, the shield 80 that receives the cleaning liquid discharged from the substrate W is switched. Therefore, the second shield 82 in a dry state that is not used in step S5 and step S6 can be used. Therefore, compared with the case where the first shield 81 is used, the periphery of the substrate W becomes dry, so the substrate W can be dried efficiently. In addition, the cleaning liquid and the processing liquid (for example, SC1) can be recovered separately.

The other effects of the third implementation method are the same as those of the first and second implementation methods.

(Fourth embodiment) Referring to FIG. 8 , the substrate processing method of the substrate processing apparatus 100 of the fourth embodiment of the present invention is described. FIG. 8 is a flow chart showing the substrate processing method of the substrate processing apparatus 100 of the fourth embodiment. In the fourth embodiment, unlike the first to third embodiments, an example of setting a pre-cleaning process (step S11) is described. In the fourth embodiment, the substrate processing method of the substrate processing apparatus 100 includes steps S1 to S5, step S11, step S6, and step S7. Steps S1 to S5, step S11, step S6, and step S7 are executed by the control unit 102. Furthermore, in the fourth embodiment, a part of the substrate processing method of the first embodiment shown in FIG. 5 is changed for explanation, but a part of the substrate processing method of the second embodiment shown in FIG. 6 may be changed, and a part of the substrate processing method of the third embodiment shown in FIG. 7 may also be changed. The structure of the substrate processing apparatus 100 of the fourth embodiment is the same as that of the first embodiment.

As shown in FIG8 , steps S1 to S5 are the same as those in the first embodiment.

Next, in step S11, the control unit 102 cleans the substrate W. Specifically, the control unit 102 supplies ammonia water to the upper surface Wa of the substrate W. The ammonia water can be supplied from a nozzle (not shown) that is separately provided from the nozzle 34 and the nozzle 44, or can be supplied from the nozzle 34. In addition, the control unit 102 supplies ozone water to the lower surface Wb of the substrate W. At this time, the control unit 102 supplies ammonia water and ozone water to the substrate W at the same time. Furthermore, the rotation speed of the substrate W in step S11 is not particularly limited, for example, it is greater than 300 rpm and less than 1200 rpm.

When a specified time has passed since the start of supplying ammonia water to the substrate W, the control unit 102 stops supplying ammonia water and ozone water. Furthermore, in the fourth embodiment, ozone water is also supplied to the lower surface Wb of the substrate W in the next step S6, so the supply of ozone water may not be stopped.

Then, step S6 and step S7 are performed in the same manner as the first embodiment.

The processing of the substrate W is completed in the above manner.

The other substrate processing methods and effects of the fourth embodiment are the same as those of the first to third embodiments.

The embodiments of the present invention are described above with reference to the drawings. However, the present invention is not limited to the embodiments described above, and can be implemented in various ways without departing from the scope of the present invention. In addition, various inventions can be formed by appropriately combining the plurality of constituent elements disclosed in the embodiments described above. For example, some constituent elements can be deleted from all the constituent elements shown in the embodiments. Furthermore, constituent elements of different embodiments can also be appropriately combined. For ease of understanding, the drawings mainly schematically show the constituent elements, and the thickness, length, number, spacing, etc. of the constituent elements shown may also be different from the actual ones for the convenience of making the drawings. Furthermore, the materials, shapes, dimensions, etc. of the components shown in the above-mentioned embodiments are merely examples and are not particularly limited, and various changes may be made within the scope of the effects of the present invention.

For example, in the first embodiment, an example is shown in which hydrogen water is supplied to the upper surface Wa of the substrate W and ozone water is supplied to the lower surface Wb of the substrate W, but the present invention is not limited thereto. For example, ozone water may be supplied to the upper surface Wa of the substrate W and hydrogen water may be supplied to the lower surface Wb of the substrate W.

Moreover, for example, in the second embodiment, the following example is shown, that is, hydrogen water is supplied to the upper surface Wa of the substrate W, and at the same time, ozone water is supplied to the lower surface Wb of the substrate W, and then hydrogen water is supplied to both the upper surface Wa and the lower surface Wb of the substrate W, but the present invention is not limited to this. For example, one of ozone water and hydrogen water may be supplied to the upper surface Wa of the substrate W, and at the same time, the other of ozone water and hydrogen water may be supplied to the lower surface Wb of the substrate W, and then ozone water may be supplied to both the upper surface Wa and the lower surface Wb of the substrate W.

In the first to fourth embodiments, the nozzles 44 and 54 are configured to supply ozone water and hydrogen water to the substrate W, but the present invention is not limited thereto. The nozzle 44 may be configured to supply only one of the ozone water and hydrogen water to the substrate W. In addition, the nozzle 54 may be configured to supply only the other of the ozone water and hydrogen water to the substrate W.

Furthermore, in the first to fourth embodiments, the nozzle 44 for supplying the cleaning liquid to the upper surface Wa of the substrate W and the nozzle 54 for supplying the cleaning liquid to the lower surface Wb of the substrate W are provided, but the present invention is not limited thereto. For example, only the nozzle 44 for supplying the cleaning liquid to the upper surface Wa of the substrate W may be provided. In this case, the nozzle 44 may be configured to supply both ozone water and hydrogen water to the substrate W.

In the first to fourth embodiments, the reflux pipes 61 and 62 are provided to return the cleaning liquid from the treatment liquid tank 120 to the ozone water tank 320 and the hydrogen water tank 330, but the present invention is not limited thereto. For example, the cleaning liquid may not be returned from the treatment liquid tank 120 to the ozone water tank 320 and the hydrogen water tank 330.

In the first to fourth embodiments, the example in which the reflux pipe for returning the cleaning liquid used for cleaning from the substrate processing unit 10 to the ozone water tank 320 and the hydrogen water tank 330 is not provided is shown, but the present invention is not limited thereto. For example, a reflux pipe for returning the cleaning liquid used for cleaning from the substrate processing unit 10 to the ozone water tank 320 and the hydrogen water tank 330 may be provided.

In the first to fourth embodiments, for example, ozone water is supplied to the lower surface Wb of the substrate W in steps S5 and S6, but the present invention is not limited thereto. For example, pure water may be supplied to the lower surface Wb of the substrate W in steps S5 and S6.

In the first to fourth embodiments, the cleaning liquid in the treatment liquid tank 120 is not circulated, but the present invention is not limited thereto, and the cleaning liquid may be circulated in the treatment liquid tank 120. For example, a pipe branching from the pipe 341 may be provided to return the ozone water to the ozone water tank 320. In addition, a pipe branching from the pipe 351 may be provided to return the hydrogen water to the hydrogen water tank 330.

Furthermore, in the first to fourth embodiments, the bubble generating device 336 is provided, but the present invention is not limited thereto. For example, the bubble generating device 336 may not be provided.

In the first to fourth embodiments, the bubble generating device 336 generates bubbles in the hydrogen water in the hydrogen water tank 330, but the present invention is not limited thereto. The bubble generating device 336 may generate bubbles in the hydrogen water in the pipe, for example.

In the first embodiment, an example is shown in which no tank is provided downstream of the ozone water tank 320 and the hydrogen water tank 330, but the present invention is not limited thereto. For example, a tank for storing ozone water may be provided downstream of the ozone water tank 320. In addition, a tank for storing hydrogen water may be provided downstream of the hydrogen water tank 330.

Furthermore, in the above description, for example, the expression "Above A and below B" means "Above A and below B". The expression "greater than A and less than B" means "greater than A and less than B". The expression "higher than A and lower than B" means "higher than A and lower than B". Similarly, other expressions such as "concentration higher than A and lower than B" also mean "concentration higher than A and lower than B". [Industrial Applicability]

The present invention can be preferably used in a substrate processing apparatus and a substrate processing method.

10: Substrate processing unit 12: Chamber 20: Substrate holding unit 21: Rotating base 22: Chuck assembly 23: Shaft 24: Electric motor 25: Housing 30: Processing liquid supply unit 32: Piping 34: Nozzle 36: Valve 40: First cleaning liquid supply unit 42: Piping 42a: First piping 42b: Second piping 42c: Common piping 44: Nozzle (first nozzle) 46: Valve (switching valve) 50: Second cleaning liquid supply unit 52: Piping 52a: First piping 52b: Second piping 52c: Common piping 54: Nozzle (No. 2 Nozzle) 55: Nozzle 56: Valve (Switch Valve) 61: Reflux Pipe 62: Reflux Pipe 63: Valve 64: Valve 80: Shield 81: No. 1 Shield 82: No. 2 Shield 100: Substrate Processing Device 101: Control Device 102: Control Unit 104: Memory Unit 110: Processing Liquid Tank 120: Processing Liquid Tank 310: Electrolysis Unit 311: Pipe 312: Valve 320: Ozone Water Tank 321: Pipe 322: Valve 325: No. 1 Concentrator 328: Flow Meter 329: Pipe 330: Hydrogen water tank 331: Piping 332: Valve 335: Second concentration meter 336: Bubble generator 338: Flow meter 339: Piping 341: Piping 342: Heater 343: Pump 344: Filter 345: Flow meter 346: Valve 351: Piping 352: Heater 353: Pump 354: Filter 355: Flow meter 356: Valve 360: Waste liquid tank 361a: Piping 361b: Piping 362a: Valve 362b: Valve 910a: Ozone water piping 910b: Ozone water piping 920a: Hydrogen water piping 920b: Hydrogen water piping Ax: Rotating axis CR: Center robot IR: Carrier robot LP: Loading port S1: Step (generation process) S2: Step S3: Step S4: Step S5: Step S6: Step (cleaning process) S7: Step S11: Step S61: Step S62: Step S71: Step S72: Step TW: Tower W: Substrate Wa: Upper surface Wb: Lower surface X: Axis Y: Axis Z: Axis

FIG. 1 is a schematic top view of a substrate processing apparatus of the first embodiment. FIG. 2 is a schematic diagram of a substrate processing unit in the substrate processing apparatus of the first embodiment. FIG. 3 is a schematic diagram for illustrating the piping structure of the substrate processing apparatus. FIG. 4 is a block diagram of the substrate processing apparatus of the first embodiment. FIG. 5 is a flow chart showing a substrate processing method of the substrate processing apparatus of the first embodiment. FIG. 6 is a flow chart showing a substrate processing method of the substrate processing apparatus of the second embodiment. FIG. 7 is a flow chart showing a substrate processing method of the substrate processing apparatus of the third embodiment. FIG. 8 is a flow chart showing a substrate processing method of the substrate processing apparatus of the fourth embodiment.

10: Substrate processing unit

40: 1st cleaning liquid supply unit

42: Piping

42a: 1st piping

42b: Second pipe

42c: Shared piping

44: Nozzle (No. 1)

46: Valve (Switch Valve)

50: Second cleaning liquid supply unit

52: Piping

52a: 1st piping

52b: Second pipe

52c: Shared piping

54: Nozzle (No. 2)

56: Valve (Switch Valve)

61: Return pipe

62: Return pipe

63: Valve

64: Valve

80: Shield

100: Substrate processing device

110: Treatment fluid cabinet

120: Treatment tank

310: Electrolysis Department

311: Piping

312: Valve

320: Ozone water tank

321: Piping

322: Valve

325: No. 1 concentration meter

328:Flow meter

329: Piping

330: Hydrogen tank

331: Piping

332: Valve

335: 2nd concentration meter

336: Bubble generating device

338:Flow meter

339: Piping

341: Piping

342: Heater

343: Pump

344:Filter

345:Flow meter

346: Valve

351: Piping

352: Heater

353: Pump

354:Filter

355: Flow meter

356: Valve

360: Waste liquid tank

361a: Piping

361b: Piping

362a: Valve

362b: Valve

910a: Ozone water piping

910b: Ozone water piping

920a: Hydrogen water piping

920b: Hydrogen water piping

W: Substrate

Claims (16)

A substrate processing device, comprising: a substrate processing unit having a nozzle for supplying a cleaning liquid to a substrate; an electrolysis section for electrolyzing pure water to generate ozone water and hydrogen water as the cleaning liquid; an ozone water tank for storing the ozone water; and a hydrogen water tank for storing the hydrogen water; and the nozzle supplies the ozone water from the ozone water tank and the hydrogen water from the hydrogen water tank to the substrate. A substrate processing device as claimed in claim 1, wherein the nozzle comprises: a first nozzle that supplies at least one of the ozone water and the hydrogen water to the upper surface of the substrate; and a second nozzle that supplies at least the other of the ozone water and the hydrogen water to the lower surface of the substrate. A substrate processing device as claimed in claim 2, wherein the first nozzle and the second nozzle supply the cleaning liquid to the substrate at the same time. The substrate processing device of claim 2 is provided with: an ozone water piping for supplying the ozone water in the ozone water tank to at least one of the first nozzle and the second nozzle; a hydrogen water piping for supplying the hydrogen water in the hydrogen water tank to at least one of the first nozzle and the second nozzle; and a switching valve for switching the cleaning liquid supplied to at least one of the first nozzle and the second nozzle; and at least one of the first nozzle and the second nozzle supplies the ozone water and the hydrogen water to the substrate. The substrate processing device of claim 4, wherein one of the first nozzle and the second nozzle is the second nozzle, the first nozzle supplies one of the ozone water and the hydrogen water to the upper surface of the substrate, and at the same time, the second nozzle supplies the other of the ozone water and the hydrogen water to the lower surface of the substrate, and then, the switching valve switches the cleaning liquid supplied to the second nozzle, whereby the first nozzle and the second nozzle simultaneously supply the ozone water and the hydrogen water to the substrate. The substrate processing device of claim 5, wherein the first nozzle supplies the hydrogen water to the upper surface of the substrate, and at the same time, the second nozzle supplies the ozone water to the lower surface of the substrate, and then, the switching valve switches the cleaning liquid supplied to the second nozzle from the ozone water to the hydrogen water, whereby the first nozzle and the second nozzle simultaneously supply the hydrogen water to the substrate. A substrate processing device as claimed in claim 2, wherein the first nozzle supplies the hydrogen water to the upper surface of the substrate, and the second nozzle supplies the ozone water to the lower surface of the substrate. A substrate processing apparatus as claimed in any one of claims 1 to 7, comprising a bubble generating device for generating bubbles in the above-mentioned hydrogen water. A substrate processing method, comprising: a generation process, which is to electrolyze pure water to generate ozone water and hydrogen water as cleaning liquid; and a cleaning process, which is to clean the substrate by the ozone water and the hydrogen water; and in the generation process, the generated ozone water is stored in an ozone water tank, and the generated hydrogen water is stored in a hydrogen water tank, in the cleaning process, the ozone water in the ozone water tank is supplied to the substrate, and the hydrogen water in the hydrogen water tank is supplied to the substrate. A substrate processing method as claimed in claim 9, wherein in the cleaning step, at least one of the ozone water and the hydrogen water is supplied to the upper surface of the substrate, and at least the other of the ozone water and the hydrogen water is supplied to the lower surface of the substrate. A substrate processing method as claimed in claim 10, wherein in the cleaning step, the cleaning liquid is supplied to the upper surface and the lower surface of the substrate at the same time. A substrate processing method as claimed in claim 10, wherein in the cleaning step, the cleaning liquid supplied to at least one of the upper surface and the lower surface of the substrate is switched. The substrate processing method of claim 12, wherein in the cleaning process, one of the ozone water and the hydrogen water is supplied to the upper surface of the substrate, and at the same time, the other of the ozone water and the hydrogen water is supplied to the lower surface of the substrate, and then, the cleaning liquid supplied to the lower surface of the substrate is switched, thereby supplying the ozone water and the hydrogen water to the upper surface and the lower surface of the substrate at the same time. The substrate processing method of claim 13, wherein in the cleaning process, the hydrogen water is supplied to the upper surface of the substrate, and at the same time, the ozone water is supplied to the lower surface of the substrate, and then, the cleaning liquid supplied to the lower surface of the substrate is switched from the ozone water to the hydrogen water, thereby supplying the hydrogen water to the upper surface and the lower surface of the substrate at the same time. A substrate processing method as claimed in claim 10, wherein in the cleaning process, the hydrogen water is supplied to the upper surface of the substrate, and the ozone water is supplied to the lower surface of the substrate. A substrate processing method as claimed in any one of claims 9 to 15, wherein bubbles are generated in the hydrogen water before the hydrogen water is supplied to the substrate.