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TW202427026A - Backlights including a patterned diffuser - Google Patents

Backlights including a patterned diffuser Download PDF

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Publication number
TW202427026A
TW202427026A TW112142618A TW112142618A TW202427026A TW 202427026 A TW202427026 A TW 202427026A TW 112142618 A TW112142618 A TW 112142618A TW 112142618 A TW112142618 A TW 112142618A TW 202427026 A TW202427026 A TW 202427026A
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Taiwan
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patterned
light source
backlight
reflector
center
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TW112142618A
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Chinese (zh)
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堵光磊
韓松峰
向東 米
牛慈伶
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美商康寧公司
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Publication of TW202427026A publication Critical patent/TW202427026A/en

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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133602Direct backlight
    • G02F1/133605Direct backlight including specially adapted reflectors
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133602Direct backlight
    • G02F1/133606Direct backlight including a specially adapted diffusing, scattering or light controlling members

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Planar Illumination Modules (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)

Abstract

A backlight includes a substrate, a plurality of light sources, a reflective layer, a plurality of elements, and a patterned diffuser. The plurality of light sources are proximate the substrate. The reflective layer is on the substrate and includes a first reflectance. The plurality of elements are proximate the substrate and each element includes a second reflectance different from the first reflectance. The patterned diffuser includes a plurality of patterned reflectors and a plurality of compensation features over the plurality of light sources and the plurality of elements. Each patterned reflector is over a corresponding light source and includes a varying transmittance, and each compensation feature is over a corresponding element.

Description

包括圖案化漫射器的背光Backlight including patterned diffuser

相關申請的交叉引用Cross-references to related applications

本專利申請案請求於2022年11月8日提出申請的美國臨時申請第63/423604號的優先權,其內容藉由引用整體併入本文。This patent application claims priority to U.S. Provisional Application No. 63/423604, filed on November 8, 2022, the contents of which are incorporated herein by reference in their entirety.

本發明主要涉及顯示器的背光。更具體地,本發明涉及包括圖案化漫射器的背光。The present invention generally relates to backlights for displays. More particularly, the present invention relates to backlights including patterned diffusers.

液晶顯示器(LCD)通常用於各種電子設備,例如蜂巢式電話、膝上型電腦、電子平板電腦、電視和電腦監視器。LCD是基於光閥的顯示器,其中顯示面板包括可單獨定址的光閥陣列。LCD包括用於產生光的背光,產生的光被執行波長轉換、濾波及/或偏振以產生LCD的圖像。背光可以是側光式或直光式。側光式背光可包括邊緣耦合到導光板的發光二極體(LED)陣列,從導光板的表面發射光。直光式背光可以包括直接位於LCD面板後方的二維(2D)LED陣列。Liquid crystal displays (LCDs) are commonly used in a variety of electronic devices, such as cellular phones, laptops, electronic tablets, televisions, and computer monitors. LCDs are shutter-based displays in which the display panel includes an array of individually addressable shutters. The LCD includes a backlight for generating light that is wavelength converted, filtered, and/or polarized to produce the image of the LCD. The backlight can be edge-lit or direct-lit. A side-lit backlight may include an array of light emitting diodes (LEDs) edge-coupled to a light guide that emits light from the surface of the light guide. A direct-lit backlight may include a two-dimensional (2D) LED array located directly behind the LCD panel.

與側光式背光相比,直光式背光可具有改善動態對比度的優點。例如,具有直光式背光的顯示器可以獨立地調整每個LED的亮度以設置整個圖像的動態亮度範圍。這通常被稱為局部調光。然而,為了實現期望的光均勻性及/或避免直光式背光中的熱點,可以將漫射板或膜定位在距LED一定距離處,因而與側光式背光相比,整個顯示器的厚度較大。位於LED上方的透鏡已用於直光式背光中以改善光的橫向擴散。然而,在此類配置中LED與漫射板或膜之間的光學距離(OD)(例如,從至少10毫米到通常約20-30毫米)仍然導致整個顯示器的厚度非期望的大,及/或此類配置可能隨著背光厚度減小而產生不期望的光學損失。雖然側光式背光可以更薄,但是來自每個LED的光散佈在導光板的大區域上,使得關閉單獨的LED或LED組對動態對比度僅有非常小的影響。Direct-lit backlights may have the advantage of improved dynamic contrast compared to edge-lit backlights. For example, a display with a direct-lit backlight may independently adjust the brightness of each LED to set the dynamic brightness range of the entire image. This is often referred to as local dimming. However, to achieve the desired light uniformity and/or avoid hot spots in a direct-lit backlight, a diffuser plate or film may be positioned at a distance from the LEDs, resulting in a greater thickness of the overall display compared to an edge-lit backlight. Lenses located above the LEDs have been used in direct-lit backlights to improve lateral diffusion of light. However, the optical distance (OD) between the LEDs and the diffuser plate or film in such configurations (e.g., from at least 10 mm to typically about 20-30 mm) still results in an undesirably large thickness for the overall display, and/or such configurations may produce undesirable optical loss as the backlight thickness decreases. While edge-lit backlights can be thinner, the light from each LED is spread over a large area of the light guide, so that turning off individual LEDs or groups of LEDs has only a very small effect on dynamic contrast.

本發明的一些實施例涉及背光。背光包括基板、複數個光源、反射層、複數個元件和圖案化漫射器。複數個光源鄰近基板。反射層在基板上並且具有第一反射率。複數個元件鄰近基板,並且每個元件具有不同於第一反射率的第二反射率。圖案化漫射器包括位於複數個光源和複數個元件上方的複數個圖案化反射器和複數個補償特徵結構。每個圖案化反射器位於對應光源上方並且具有變化的透射率,並且每個補償特徵結構位於對應元件上方。Some embodiments of the present invention relate to backlights. The backlight includes a substrate, a plurality of light sources, a reflective layer, a plurality of elements, and a patterned diffuser. The plurality of light sources are adjacent to the substrate. The reflective layer is on the substrate and has a first reflectivity. The plurality of elements are adjacent to the substrate, and each element has a second reflectivity different from the first reflectivity. The patterned diffuser includes a plurality of patterned reflectors and a plurality of compensating feature structures located above the plurality of light sources and the plurality of elements. Each patterned reflector is located above a corresponding light source and has a varying transmittance, and each compensating feature structure is located above a corresponding element.

本發明的其他實施例涉及背光。背光包括基板、複數個光源、反射層、複數個元件和圖案化漫射器。複數個光源鄰近基板。反射層在基板上並且具有第一反射率。複數個元件鄰近基板,並且每個元件具有不同於第一反射率的第二反射率。圖案化漫射器包括位於複數個光源和複數個元件上方的複數個圖案化反射器。複數個圖案化反射器包括位於與對應元件相鄰佈置的對應光源上方的非對稱反射器和位於不與對應元件相鄰佈置的對應光源上方的對稱反射器。Other embodiments of the present invention relate to a backlight. The backlight includes a substrate, a plurality of light sources, a reflective layer, a plurality of elements, and a patterned diffuser. The plurality of light sources are adjacent to the substrate. The reflective layer is on the substrate and has a first reflectivity. The plurality of elements are adjacent to the substrate, and each element has a second reflectivity different from the first reflectivity. The patterned diffuser includes a plurality of patterned reflectors located above the plurality of light sources and the plurality of elements. The plurality of patterned reflectors include an asymmetric reflector located above a corresponding light source disposed adjacent to the corresponding element and a symmetric reflector located above a corresponding light source disposed not adjacent to the corresponding element.

本發明的其他實施例涉及背光。背光包括基板、複數個光源、反射層和圖案化漫射器。複數個光源鄰近基板。反射層在基板上。圖案化漫射器包括位於複數個光源上方的複數個圖案化反射器。每個圖案化反射器與對應光源對準。每個圖案化反射器具有反射率,該反射率從第一位置處的第一值變化為小於第一值的第二位置處的第二值,並且從第二位置處的第二值變化為大於第二值的第三位置處的第三值,第一位置位於每個圖案化反射器的中心,第二位置距第一位置第一距離,第三位置距第一位置第二距離,第二距離大於第一距離。Other embodiments of the present invention relate to backlights. The backlight includes a substrate, a plurality of light sources, a reflective layer, and a patterned diffuser. The plurality of light sources are adjacent to the substrate. The reflective layer is on the substrate. The patterned diffuser includes a plurality of patterned reflectors located above the plurality of light sources. Each patterned reflector is aligned with a corresponding light source. Each patterned reflector has a reflectivity that changes from a first value at a first position to a second value at a second position that is less than the first value, and changes from the second value at the second position to a third value at a third position that is greater than the second value, the first position being located at the center of each patterned reflector, the second position being a first distance from the first position, the third position being a second distance from the first position, and the second distance being greater than the first distance.

本發明的其他實施例涉及背光。背光包括基板、複數個光源、反射層和複數個元件。複數個光源鄰近基板。反射層在基板上並且具有第一反射率。複數個元件鄰近基板,並且每個元件鄰近複數個光源中對應的第一、第二、第三和第四最近光源。對應的第一、第二、第三和第四光源中的每一個的對應中心作為頂點形成對應的四邊形。每個元件具有不同於第一反射率的第二反射率。每個元件的中心與對應的第一最近光源之間的距離是對應的四邊形的中心與對應的第一最近光源之間的距離的至少約80%。Other embodiments of the present invention relate to backlight. The backlight includes a substrate, a plurality of light sources, a reflective layer and a plurality of elements. The plurality of light sources are adjacent to the substrate. The reflective layer is on the substrate and has a first reflectivity. The plurality of elements are adjacent to the substrate, and each element is adjacent to the corresponding first, second, third and fourth nearest light sources among the plurality of light sources. The corresponding center of each of the corresponding first, second, third and fourth light sources is used as a vertex to form a corresponding quadrilateral. Each element has a second reflectivity different from the first reflectivity. The distance between the center of each element and the corresponding first nearest light source is at least about 80% of the distance between the center of the corresponding quadrilateral and the corresponding first nearest light source.

本發明的其他實施例涉及背光。背光包括基板、複數個調光區、反射層和在每個調光區內鄰近基板的元件。每個調光區包括鄰近基板的複數個光源,並且具有複數個光源之間的第一間距 Px和第二間距 Py。反射層在基板上並且具有第一反射率。元件具有不同於第一反射率的第二反射率,並且元件的中心與複數個光源中的最近光源之間的距離 d1由下式提供: Other embodiments of the present invention relate to a backlight. The backlight includes a substrate, a plurality of dimming zones, a reflective layer, and an element adjacent to the substrate in each dimming zone. Each dimming zone includes a plurality of light sources adjacent to the substrate, and has a first spacing Px and a second spacing Py between the plurality of light sources. The reflective layer is on the substrate and has a first reflectivity. The element has a second reflectivity different from the first reflectivity, and a distance d1 between the center of the element and the nearest light source among the plurality of light sources is provided by the following formula: .

本文公開的背光是薄的直光式背光,可以改善光效率和均勻性。背光改良了隱藏光源並減輕因吸收元件及/或兩個或多個光源區域之間的相交引起的局部亮度差異的能力,從而形成更薄的背光。隱藏光源和減輕局部亮度差異的改良能力允許去除背光的光源正上方的所謂「熱點」和吸收元件正上方及/或兩個或多個光源區域之間的相交處的所謂「暗點」,從而在整個顯示器上形成均勻亮度。The backlight disclosed herein is a thin direct-lit backlight that can improve light efficiency and uniformity. The backlight has an improved ability to hide the light source and reduce local brightness differences caused by an absorption element and/or the intersection between two or more light source areas, thereby forming a thinner backlight. The improved ability to hide the light source and reduce local brightness differences allows the removal of so-called "hot spots" directly above the light source of the backlight and so-called "dark spots" directly above the absorption element and/or the intersection between two or more light source areas, thereby forming uniform brightness across the entire display.

其他特徵和優點將在下面的詳細描述中闡述,並且對於本領域技藝人士而言,藉由該描述在一定程度上是顯而易見的,或者藉由實踐本文所述的實施例(包括下面的詳細描述、申請專利範圍以及附圖)可獲知。Other features and advantages will be set forth in the following detailed description and will be apparent to those skilled in the art from the description to a certain extent, or may be learned by practicing the embodiments described herein, including the following detailed description, the claims, and the accompanying drawings.

應當理解,前面的一般性描述和下面的詳細描述都僅僅是示例性的,旨在提供概述或框架以理解請求項的性質和特性。附圖用於提供進一步的理解,並且附圖併入本說明書中並構成本說明書的一部分。附圖圖示一或多個實施例,並且與說明書一起解釋了各個實施例的原理和操作。It should be understood that the foregoing general description and the following detailed description are merely exemplary and are intended to provide an overview or framework for understanding the nature and characteristics of the claimed subject matter. The accompanying drawings are used to provide a further understanding and are incorporated into and constitute a part of this specification. The accompanying drawings illustrate one or more embodiments and together with the specification explain the principles and operation of the various embodiments.

現在將詳細參考本發明的實施例,其示例在附圖中示出。在可能的情況下,在整個附圖中將使用相同的元件符號來表示相同或相似的部分。然而,本發明可以以許多不同的形式體現,不應被解釋為限於本文闡述的實施例。Reference will now be made in detail to embodiments of the present invention, examples of which are shown in the accompanying drawings. Wherever possible, the same reference numerals will be used throughout the drawings to represent the same or similar parts. However, the present invention may be embodied in many different forms and should not be construed as limited to the embodiments described herein.

在本文中可以將範圍表示為從「約」一個特定值及/或到「約」另一個特定值。當表達此類範圍時,另一個實施例包括從一個特定值及/或到另一個特定值。類似地,當使用先行詞「約」將值表示為近似值時,應當理解,該特定值形成另一個實施例。應進一步理解的是,在與另一個端點相關和與另一個端點無關的情況下,每個範圍中的端點都是有意義的。Ranges may be expressed herein as from "about" one particular value and/or to "about" another particular value. When such a range is expressed, another embodiment includes from the one particular value and/or to the other particular value. Similarly, when values are expressed as approximations using the antecedent "about," it will be understood that the particular value forms another embodiment. It will be further understood that the endpoints in each range are significant both in relation to the other endpoint and independently of the other endpoint.

本文使用的方向術語,例如上、下、右、左、前、後、頂、底、垂直、水平等,僅參考繪製的附圖,並不旨在暗示絕對取向。Directional terms used herein, such as up, down, right, left, front, back, top, bottom, vertical, horizontal, etc., refer only to the drawings and are not intended to imply an absolute orientation.

除非另有明確說明,否則決不旨在將本文所述的任何方法解釋為需要以特定循序執行其步驟,也不旨在將任何裝置解釋為需要特定取向。因此,在方法請求項實際上沒有敘述其步驟所遵照的順序,或者裝置請求項實際上沒有敘述各個元件的順序或取向,或者在請求項或說明書中沒有另行具體說明步驟限於特定順序、或者沒有敘述裝置的元件的特定順序或取向的情況下,決不旨在推斷任何方面的順序或取向。這適用於任何可能的非明示解釋基礎,包括與步驟安排、操作流程、元件順序或元件取向相關的邏輯問題、源自語法結構或標點符號的普通含義、以及本說明書中描述的實施例的數量或類型。Unless expressly stated otherwise, it is not intended that any method described herein be construed as requiring that its steps be performed in a particular order, nor that any device be construed as requiring a particular orientation. Thus, in the event that a method claim does not actually describe an order in which its steps are to be performed, or an apparatus claim does not actually describe an order or orientation of individual elements, or in the event that the claim or specification does not otherwise specifically state that the steps are limited to a particular order, or does not describe a particular order or orientation of elements of an apparatus, no order or orientation of any aspect is intended to be inferred. This applies to any possible non-explicit basis of explanation, including logical matters related to arrangement of steps, operational flow, sequence of components or orientation of components, ordinary meanings derived from grammatical structure or punctuation, and the number or type of embodiments described in this specification.

本文中使用的單數形式「一」、「所述」和「該」包括複數代表,除非上下文另有明確規定。因此,例如,提及「一」元件包括具有兩個或更多個此類元件的實施例,除非上下文另有明確說明。As used herein, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. Thus, for example, reference to "an" element includes embodiments having two or more such elements unless the context clearly dictates otherwise.

現在參考圖1A-1F,其圖示了示例性背光的多個視圖。圖1A是示例性背光100a的簡化截面圖。背光100a可包括基板102、反射層104、複數個光源106、複數個元件107和圖案化漫射器108a。圖案化漫射器108a包括載體110(例如,導光板)、複數個圖案化反射器112和112a、以及複數個補償特徵結構118a。複數個光源106鄰近基板102(例如,佈置在基板102上)並且與基板102電學連通。複數個元件107鄰近基板102(例如,佈置在基板102上)並且與基板102電學連通。複數個光源106及/或複數個元件107可以藉由穿過基板102延伸的通孔(未示出)電連接到基板102背側的背板電子裝置。Reference is now made to Figures 1A-1F, which illustrate multiple views of an exemplary backlight. Figure 1A is a simplified cross-sectional view of an exemplary backlight 100a. Backlight 100a may include a substrate 102, a reflective layer 104, a plurality of light sources 106, a plurality of elements 107, and a patterned diffuser 108a. Patterned diffuser 108a includes a carrier 110 (e.g., a light guide plate), a plurality of patterned reflectors 112 and 112a, and a plurality of compensating feature structures 118a. A plurality of light sources 106 are adjacent to substrate 102 (e.g., disposed on substrate 102) and are electrically connected to substrate 102. A plurality of elements 107 are adjacent to substrate 102 (e.g., disposed on substrate 102) and are electrically connected to substrate 102. The plurality of light sources 106 and/or the plurality of elements 107 may be electrically connected to backplane electronics on the back side of the substrate 102 via vias (not shown) extending through the substrate 102 .

反射層104位於基板102上並且圍繞每個光源106和每個元件107。在某些示例性實施例中,基板102是反光的,因此可以不包括反射層104。圖案化漫射器108a位於複數個光源106和複數個元件107上方,並且光學耦合到每個光源106。在某些示例性實施例中,可以用光學黏合劑(未示出)將複數個光源106耦合到圖案化漫射器108a。光學黏合劑(例如,苯基矽酮)的折射率大於或等於載體110的折射率。複數個圖案化反射器112和112a以及補償特徵結構118a佈置在載體110的上表面。在其他實施例中,圖案化反射器112和112a以及補償特徵結構118a可以佈置在載體110的下表面。每個圖案化反射器112和112a位於對應光源106上方。每個補償特徵結構118a位於對應元件107上方。A reflective layer 104 is located on the substrate 102 and surrounds each light source 106 and each element 107. In some exemplary embodiments, the substrate 102 is reflective and therefore the reflective layer 104 may not be included. A patterned diffuser 108a is located above the plurality of light sources 106 and the plurality of elements 107 and is optically coupled to each light source 106. In some exemplary embodiments, the plurality of light sources 106 may be coupled to the patterned diffuser 108a using an optical adhesive (not shown). The refractive index of the optical adhesive (e.g., phenyl silicone) is greater than or equal to the refractive index of the carrier 110. A plurality of patterned reflectors 112 and 112a and a compensating feature structure 118a are disposed on the upper surface of the carrier 110. In other embodiments, the patterned reflectors 112 and 112a and the compensation feature structure 118a may be disposed on the lower surface of the carrier 110. Each patterned reflector 112 and 112a is located above a corresponding light source 106. Each compensation feature structure 118a is located above a corresponding element 107.

每個元件107可以鄰近調光區內的光源106。調光區是可以同時打開和關閉的一組光源106。調光區可以包括任意合適數量的光源106,例如以兩行和兩列佈置的4個光源、以三行和三列佈置的9個光源、以四行和四列佈置的16個光源等。每個元件107可以是電子元件,例如用於每個調光區的控制晶片,或其他合適的元件。每個元件107可以在每個元件所在的區域周圍局部地降低亮度,這可能產生影響亮度均勻性的不均勻現象(mura)。因此,在對應於元件107的圖案化漫射器108a上的位置處形成具有較高透射率(較低反射率)的補償特徵結構118a,從而減輕元件107的影響。Each element 107 may be adjacent to a light source 106 within a dimming zone. A dimming zone is a group of light sources 106 that can be turned on and off simultaneously. A dimming zone may include any suitable number of light sources 106, such as 4 light sources arranged in two rows and two columns, 9 light sources arranged in three rows and three columns, 16 light sources arranged in four rows and four columns, etc. Each element 107 may be an electronic component, such as a control chip for each dimming zone, or other suitable component. Each element 107 may locally reduce the brightness around the area where each element is located, which may produce mura that affects brightness uniformity. Therefore, a compensating feature 118 a having a higher transmittance (lower reflectance) is formed at a position on the patterned diffuser 108 a corresponding to the element 107 , thereby reducing the influence of the element 107 .

反射層104具有第一反射率,並且每個元件107具有不同於第一反射率的第二反射率。本文中,反射層104的第一反射率和每個元件107的第二反射率是基於雙向反射率分佈函數(BRDF)的值。在某些示例性實施例中,第二反射率小於第一反射率。在圖1A的實施例中,每個補償特徵結構118a包括穿過圖案化反射器112a延伸的開口,使得載體110的表面在每個補償特徵結構118a處暴露。除了每個圖案化反射器112a內的補償特徵結構118a以外,每個圖案化反射器112a類似於每個圖案化反射器112。圖案化反射器112a內的每個補償特徵結構118a的透射率與不對應於元件107的每個圖案化反射器112的對應位置處的透射率不同。因此,與沒有補償特徵結構118a的圖案化反射器112相比,補償特徵結構118a改變了佈置有補償特徵結構的圖案化反射器112a的透射率。在該實施例中,由於每個補償特徵結構118a包括開口,因此每個補償特徵結構包括恆定的透射率。在該實施例中,如130所示,每個圖案化反射器112和112a的中心與對應光源106(例如,對應光源的中心)對準。另外,如132所示,每個補償特徵結構118a的中心與對應元件107(例如,對應元件的中心)對準。The reflective layer 104 has a first reflectivity, and each element 107 has a second reflectivity different from the first reflectivity. Herein, the first reflectivity of the reflective layer 104 and the second reflectivity of each element 107 are values based on a bidirectional reflectivity distribution function (BRDF). In certain exemplary embodiments, the second reflectivity is less than the first reflectivity. In the embodiment of FIG. 1A , each compensation feature structure 118 a includes an opening extending through the patterned reflector 112 a so that the surface of the carrier 110 is exposed at each compensation feature structure 118 a. Each patterned reflector 112 a is similar to each patterned reflector 112 except for the compensation feature structure 118 a within each patterned reflector 112 a. The transmittance of each compensating feature structure 118a within the patterned reflector 112a is different from the transmittance at the corresponding position of each patterned reflector 112 that does not correspond to the element 107. Therefore, the compensating feature structure 118a changes the transmittance of the patterned reflector 112a arranged with the compensating feature structure compared to the patterned reflector 112 without the compensating feature structure 118a. In this embodiment, since each compensating feature structure 118a includes an opening, each compensating feature structure includes a constant transmittance. In this embodiment, as shown at 130, the center of each patterned reflector 112 and 112a is aligned with the corresponding light source 106 (e.g., the center of the corresponding light source). Additionally, as shown at 132, the center of each compensation feature 118a is aligned with the corresponding element 107 (eg, the center of the corresponding element).

每個圖案化反射器112和112a具有變化的透射率,並且可以具有沿圖案化反射器的寬度或直徑的厚度剖面,該厚度剖面包括如113所示的基本平坦部分和如114所示的從基本平坦部分113延伸並圍繞基本平坦部分113的曲面部分。基本平坦部分113可具有粗糙的表面輪廓(例如,整個基本平坦部分的厚度略有變化)。在某些示例性實施例中,基本平坦部分113的厚度變化不超過基本平坦部分的平均厚度的正負20%。在該實施例中,在垂直於載體110的方向上測量的平均厚度被定義為基本平坦部分的最大厚度(T max)加上基本平坦部分的最小厚度(T min)除以2(即,(T max+T min)/2)。例如,對於約100微米的基本平坦部分113的平均厚度,基本平坦部分的最大厚度可等於或小於約120微米,並且基本平坦部分的最小厚度可等於或大於約80微米。在其他實施例中,基本平坦部分113的厚度變化不超過基本平坦部分的平均厚度的正負15%。例如,對於約80微米的基本平坦部分113的平均厚度,基本平坦部分的最大厚度可等於或小於約92微米,並且基本平坦部分的最小厚度可等於或大於約68微米。 Each patterned reflector 112 and 112a has a varying transmittance and may have a thickness profile along the width or diameter of the patterned reflector, the thickness profile including a substantially flat portion as shown at 113 and a curved portion extending from and surrounding the substantially flat portion 113 as shown at 114. The substantially flat portion 113 may have a rough surface profile (e.g., the thickness of the entire substantially flat portion varies slightly). In certain exemplary embodiments, the thickness of the substantially flat portion 113 varies by no more than plus or minus 20% of the average thickness of the substantially flat portion. In this embodiment, the average thickness measured in a direction perpendicular to the carrier 110 is defined as the maximum thickness of the substantially flat portion (T max ) plus the minimum thickness of the substantially flat portion (T min ) divided by 2 (i.e., (T max +T min )/2). For example, for an average thickness of the substantially flat portion 113 of about 100 microns, the maximum thickness of the substantially flat portion may be equal to or less than about 120 microns, and the minimum thickness of the substantially flat portion may be equal to or greater than about 80 microns. In other embodiments, the thickness of the substantially flat portion 113 varies by no more than plus or minus 15% of the average thickness of the substantially flat portion. For example, for an average thickness of the substantially flat portion 113 of about 80 microns, the maximum thickness of the substantially flat portion may be equal to or less than about 92 microns, and the minimum thickness of the substantially flat portion may be equal to or greater than about 68 microns.

在其他實施例中,基本平坦部分113的厚度變化不超過基本平坦部分的平均厚度的正負10%。例如,對於約50微米的基本平坦部分113的平均厚度,基本平坦部分的最大厚度可等於或小於約55微米,並且基本平坦部分的最小厚度可等於或大於約45微米。在其他實施例中,基本平坦部分113的厚度變化不超過基本平坦部分的平均厚度的正負5%。可以用厚度變化與距圖案化反射器112的中心的距離變化的絕對比率來定義曲面部分114。曲面部分114的斜率可以隨著距圖案化反射器112的中心的距離而減小。在某些示例性實施例中,斜率在基本平坦部分113附近最大,隨著遠離圖案化反射器112的中心而快速減小,然後隨著進一步遠離圖案化反射器的中心而緩慢減小。In other embodiments, the thickness of the substantially flat portion 113 varies by no more than plus or minus 10% of the average thickness of the substantially flat portion. For example, for an average thickness of the substantially flat portion 113 of about 50 microns, the maximum thickness of the substantially flat portion may be equal to or less than about 55 microns, and the minimum thickness of the substantially flat portion may be equal to or greater than about 45 microns. In other embodiments, the thickness of the substantially flat portion 113 varies by no more than plus or minus 5% of the average thickness of the substantially flat portion. The curved portion 114 may be defined by an absolute ratio of the thickness variation to the distance variation from the center of the patterned reflector 112. The slope of the curved portion 114 may decrease with the distance from the center of the patterned reflector 112. In certain exemplary embodiments, the slope is greatest near the substantially flat portion 113, decreases rapidly as one moves away from the center of the patterned reflector 112, and then decreases slowly as one moves further away from the center of the patterned reflector.

如120所示(在平行於基板102的平面中)的每個基本平坦部分113的尺寸L0(即,寬度或直徑)可以大於如124所示(在平行於基板102的平面中)的每個對應光源106的尺寸(即,寬度或直徑)。每個基本平坦部分113的尺寸120可以小於每個對應光源106的尺寸124乘以預定值。在某些示例性實施例中,當每個光源106的尺寸124大於或等於約0.5毫米時,預定值可以是約2或約3,使得每個基本平坦部分113的尺寸小於每個光源106的尺寸的三倍。當每個光源106的尺寸124小於0.5毫米時,可以根據光源106與圖案化反射器112和112a之間的對準能力決定該預定值,使得每個圖案化反射器112和112a的每個基本平坦部分113的尺寸在比每個光源106的尺寸大約100微米至約300微米的範圍內。每個基本平坦部分113足夠大以使每個圖案化反射器112和112a可以與對應光源106對準,並且足夠小以實現合適的亮度均勻性和顏色均勻性。The dimension L0 (i.e., width or diameter) of each substantially flat portion 113 as indicated at 120 (in a plane parallel to the substrate 102) may be greater than the dimension (i.e., width or diameter) of each corresponding light source 106 as indicated at 124 (in a plane parallel to the substrate 102). The dimension 120 of each substantially flat portion 113 may be less than the dimension 124 of each corresponding light source 106 multiplied by a predetermined value. In certain exemplary embodiments, when the dimension 124 of each light source 106 is greater than or equal to about 0.5 mm, the predetermined value may be about 2 or about 3, such that the dimension of each substantially flat portion 113 is less than three times the dimension of each light source 106. When the size 124 of each light source 106 is less than 0.5 mm, the predetermined value may be determined based on the alignment capability between the light source 106 and the patterned reflectors 112 and 112 a, so that the size of each substantially flat portion 113 of each patterned reflector 112 and 112 a is in the range of about 100 microns to about 300 microns larger than the size of each light source 106. Each substantially flat portion 113 is large enough to allow each patterned reflector 112 and 112 a to be aligned with the corresponding light source 106, and small enough to achieve appropriate brightness uniformity and color uniformity.

122表示(在平行於基板102的平面中)每個圖案化反射器112的尺寸L1(即,寬度或直徑),並且126表示相鄰光源106之間的間距P。雖然在圖1A中沿一個方向圖示間距,但是在與所示方向正交的方向上間距可以不同。例如,間距可以是約90、45、30、10、5、2、1或0.5毫米,大於約90毫米,或小於約0.5毫米。在某些示例性實施例中,每個圖案化反射器112和112a的尺寸122與間距126的比率L1/P在約0.45至1.0的範圍內。該比率可以隨著光源106的間距126以及每個光源的發射表面與對應的圖案化反射器112和112a之間的距離而變化。例如,對於約5毫米的間距126以及每個光源的發射表面與對應的圖案化反射器之間約0.2毫米的距離,該比率可以等於約0.50、0.60、0.70、0.80、0.90或1.0。122 represents the dimension L1 (i.e., width or diameter) of each patterned reflector 112 (in a plane parallel to the substrate 102), and 126 represents the spacing P between adjacent light sources 106. Although the spacing is illustrated along one direction in FIG. 1A, the spacing may be different in directions orthogonal to the illustrated direction. For example, the spacing may be about 90, 45, 30, 10, 5, 2, 1, or 0.5 millimeters, greater than about 90 millimeters, or less than about 0.5 millimeters. In certain exemplary embodiments, the ratio L1/P of the dimension 122 of each patterned reflector 112 and 112a to the spacing 126 is in the range of about 0.45 to 1.0. The ratio can vary with the spacing 126 of the light sources 106 and the distance between the emitting surface of each light source and the corresponding patterned reflector 112 and 112a. For example, for a spacing 126 of about 5 mm and a distance between the emitting surface of each light source and the corresponding patterned reflector of about 0.2 mm, the ratio can be equal to about 0.50, 0.60, 0.70, 0.80, 0.90 or 1.0.

每個圖案化反射器112和112a將對應光源106發射的至少一部分光反射到載體110中。每個圖案化反射器112和112a具有鏡面反射和漫反射。鏡面反射光從載體110的底表面射出。雖然鏡面反射光由於反射層104和載體110之間的反射,或者由於反射層104和顏色轉換層、漫射片或漫射板(下面的圖2中示出)之間的反射而主要橫向行進,但是由於反射層104的不完全反射,可能發生一些光損失。漫反射光具有相對於載體110的法線測量的0度至90度的角分佈。約50%的漫反射光具有大於全內反射臨界角( )的角度。因此,漫反射光由於全內反射可以橫向行進而沒有任何損失,直到隨後利用圖案化反射器112和112a將光從載體110中引出。 Each patterned reflector 112 and 112a reflects at least a portion of the light emitted by the corresponding light source 106 into the carrier 110. Each patterned reflector 112 and 112a has specular reflection and diffuse reflection. The specular reflected light is emitted from the bottom surface of the carrier 110. Although the specular reflected light mainly travels laterally due to reflection between the reflective layer 104 and the carrier 110, or due to reflection between the reflective layer 104 and the color conversion layer, diffuser or diffuser plate (shown in Figure 2 below), some light loss may occur due to incomplete reflection of the reflective layer 104. The diffusely reflected light has an angular distribution of 0 degrees to 90 degrees measured relative to the normal of the carrier 110. About 50% of the diffusely reflected light has an angle greater than the critical angle of total internal reflection ( ). Therefore, the diffusely reflected light can travel laterally without any loss due to total internal reflection until the light is subsequently guided out of the carrier 110 using the patterned reflectors 112 and 112a.

圖1B是示例性背光100b的簡化截面圖。除了在背光100b中用圖案化漫射器108b代替圖案化漫射器108a以外,背光100b類似於先前參考圖1A描述和示出的背光100a。圖案化漫射器108b包括載體110(例如,導光板)、複數個圖案化反射器112和112b、以及複數個補償特徵結構118b。複數個圖案化反射器112和112b以及補償特徵結構118b佈置在載體110的上表面。在其他實施例中,複數個圖案化反射器112和112b以及補償特徵結構118b可佈置在載體110的下表面。每個圖案化反射器112和112b位於對應光源106上方。每個補償特徵結構118b位於對應元件107上方。FIG. 1B is a simplified cross-sectional view of an exemplary backlight 100 b. The backlight 100 b is similar to the backlight 100 a previously described and illustrated with reference to FIG. 1A except that a patterned diffuser 108 b is used in place of the patterned diffuser 108 a in the backlight 100 b. The patterned diffuser 108 b includes a carrier 110 (e.g., a light guide plate), a plurality of patterned reflectors 112 and 112 b, and a plurality of compensating feature structures 118 b. The plurality of patterned reflectors 112 and 112 b and the compensating feature structures 118 b are disposed on the upper surface of the carrier 110. In other embodiments, the plurality of patterned reflectors 112 and 112 b and the compensating feature structures 118 b may be disposed on the lower surface of the carrier 110. Each patterned reflector 112 and 112b is located above the corresponding light source 106. Each compensation feature structure 118b is located above the corresponding element 107.

在該實施例中,每個補償特徵結構118b具有從更靠近圖案化反射器112b的中心的較低值變化為更遠離圖案化反射器112b的中心的較高值的透射率。除了每個圖案化反射器112b內的補償特徵結構118b之外,每個圖案化反射器112b類似於每個圖案化反射器112。圖案化反射器112b內的每個補償特徵結構118b的透射率與不對應於元件107的每個圖案化反射器112的對應位置處的透射率不同。因此,與沒有補償特徵結構118b的圖案化反射器112相比,補償特徵結構118b改變了佈置有補償特徵結構的圖案化反射器112b的透射率。在該實施例中,如130所示,每個圖案化反射器112和112b的中心與對應光源106(例如,對應光源的中心)對準。另外,如132所示,每個補償特徵結構118b的中心與對應元件107(例如,對應元件的中心)對準。In this embodiment, each compensating feature structure 118b has a transmittance that changes from a lower value closer to the center of the patterned reflector 112b to a higher value farther from the center of the patterned reflector 112b. Each patterned reflector 112b is similar to each patterned reflector 112 except for the compensating feature structure 118b within each patterned reflector 112b. The transmittance of each compensating feature structure 118b within the patterned reflector 112b is different from the transmittance at the corresponding position of each patterned reflector 112 that does not correspond to the element 107. Therefore, the compensating feature structure 118b changes the transmittance of the patterned reflector 112b provided with the compensating feature structure, compared to the patterned reflector 112 without the compensating feature structure 118b. In this embodiment, as shown at 130, the center of each patterned reflector 112 and 112b is aligned with the corresponding light source 106 (e.g., the center of the corresponding light source). In addition, as shown at 132, the center of each compensating feature structure 118b is aligned with the corresponding element 107 (e.g., the center of the corresponding element).

圖1C是示例性背光100c的簡化截面圖。除了在背光100c中使用圖案化漫射器108c代替圖案化漫射器108a以外,背光100c類似於先前參考圖1A描述和示出的背光100a。圖案化漫射器108c包括載體110(例如,導光板)、複數個圖案化反射器112和112c、以及複數個補償特徵結構118c。複數個圖案化反射器112和112c以及補償特徵結構118c佈置在載體110的上表面。在其他實施例中,複數個圖案化反射器112和112c以及補償特徵結構118c可以佈置在載體110的下表面。每個圖案化反射器112和112c位於對應光源106上方。每個補償特徵結構118c位於對應元件107上方。FIG. 1C is a simplified cross-sectional view of an exemplary backlight 100c. Backlight 100c is similar to backlight 100a previously described and illustrated with reference to FIG. 1A, except that patterned diffuser 108c is used in backlight 100c instead of patterned diffuser 108a. Patterned diffuser 108c includes a carrier 110 (e.g., a light guide plate), a plurality of patterned reflectors 112 and 112c, and a plurality of compensating feature structures 118c. The plurality of patterned reflectors 112 and 112c and the compensating feature structures 118c are disposed on the upper surface of carrier 110. In other embodiments, the plurality of patterned reflectors 112 and 112c and the compensating feature structures 118c may be disposed on the lower surface of carrier 110. Each patterned reflector 112 and 112c is located above the corresponding light source 106. Each compensation feature structure 118c is located above the corresponding element 107.

在該實施例中,每個補償特徵結構118c包括具有恆定厚度的層。除了每個圖案化反射器112c內的補償特徵結構118c之外,每個圖案化反射器112c類似於每個圖案化反射器112。圖案化反射器112c內的每個補償特徵結構118c的透射率與不對應於元件107的每個圖案化反射器112的對應位置處的透射率不同。在一些實施例中,圖案化反射器112c內的每個補償特徵結構118c的透射率比不對應於元件107的每個圖案化反射器112的對應位置處的透射率更高。在其他實施例中,圖案化反射器112c內的每個補償特徵結構118c的透射率比不對應於元件107的每個圖案化反射器112的對應位置處的透射率更低。因此,與沒有補償特徵結構118c的圖案化反射器112相比,補償特徵結構118c改變了佈置有補償特徵結構的圖案化反射器112c的透射率。在該實施例中,由於每個補償特徵結構118c具有恆定的厚度,因此每個補償特徵結構具有恆定的透射率。在該實施例中,如130所示,每個圖案化反射器112和112c的中心與對應光源106(例如,對應光源的中心)對準。另外,如132所示,每個補償特徵結構118c的中心與對應元件107(例如,對應元件的中心)對準。In this embodiment, each compensating feature structure 118c includes a layer having a constant thickness. Each patterned reflector 112c is similar to each patterned reflector 112 except for the compensating feature structure 118c within each patterned reflector 112c. The transmittance of each compensating feature structure 118c within the patterned reflector 112c is different from the transmittance at the corresponding position of each patterned reflector 112 that does not correspond to the element 107. In some embodiments, the transmittance of each compensating feature structure 118c within the patterned reflector 112c is higher than the transmittance at the corresponding position of each patterned reflector 112 that does not correspond to the element 107. In other embodiments, the transmittance of each compensating feature structure 118c within the patterned reflector 112c is lower than the transmittance at the corresponding position of each patterned reflector 112 that does not correspond to the element 107. Therefore, the compensating feature structure 118c changes the transmittance of the patterned reflector 112c arranged with the compensating feature structure compared to the patterned reflector 112 without the compensating feature structure 118c. In this embodiment, since each compensating feature structure 118c has a constant thickness, each compensating feature structure has a constant transmittance. In this embodiment, as shown at 130, the center of each patterned reflector 112 and 112c is aligned with the corresponding light source 106 (e.g., the center of the corresponding light source). Additionally, as shown at 132, the center of each compensation feature 118c is aligned with the corresponding element 107 (eg, the center of the corresponding element).

圖1D是示例性背光100d的簡化截面圖。除了在背光100d中,每個圖案化反射器112和112a的中心相對於對應光源106(例如,對應光源的中心)偏移(如134所示),並且每個補償特徵結構118a的中心相對於對應元件107(例如,對應元件的中心)偏移(如136所示)以外,背光100d類似於先前參考圖1A描述和示出的背光100a。雖然在圖1D中圖示圖案化漫射器108a包括圖案化反射器112和112a以及補償特徵結構118a以闡釋偏移134和136,但是在圖1B的圖案化漫射器108b或圖1C的圖案化漫射器108c中也可應用偏移134和136。1D is a simplified cross-sectional view of an exemplary backlight 100d. Backlight 100d is similar to backlight 100a previously described and illustrated with reference to FIG. 1A, except that in backlight 100d, the center of each patterned reflector 112 and 112a is offset relative to the corresponding light source 106 (e.g., the center of the corresponding light source) as shown at 134, and the center of each compensation feature structure 118a is offset relative to the corresponding element 107 (e.g., the center of the corresponding element) as shown at 136. Although the patterned diffuser 108a is illustrated in FIG. 1D as including the patterned reflectors 112 and 112a and the compensating feature 118a to illustrate the offsets 134 and 136, the offsets 134 and 136 may also be applied in the patterned diffuser 108b of FIG. 1B or the patterned diffuser 108c of FIG. 1C.

由於補償特徵結構118a引起的不對稱性,圖案化漫射器108a向補償特徵結構118a方向的失準容差可能變差。不均勻現象(mura)可見度變得不對稱並向元件107方向增大。利用不對稱的失準容差,每個圖案化反射器112和112a的中心可以向與對應元件107相反的方向偏離對應光源106的中心,從而改善向元件107方向的失準靈敏度。圖案化反射器112與112a之間的刻意失準可在約100微米至約200微米的範圍內。然而,這種刻意失準可能降低正交方向上的失準靈敏度。Due to the asymmetry caused by the compensating feature 118a, the misalignment tolerance of the patterned diffuser 108a in the direction of the compensating feature 118a may become worse. The visibility of the mura becomes asymmetric and increases in the direction of the element 107. With the asymmetric misalignment tolerance, the center of each patterned reflector 112 and 112a can be offset from the center of the corresponding light source 106 in the opposite direction of the corresponding element 107, thereby improving the misalignment sensitivity in the direction of the element 107. The intentional misalignment between the patterned reflectors 112 and 112a can be in the range of about 100 microns to about 200 microns. However, this intentional misalignment may reduce the misalignment sensitivity in the orthogonal direction.

圖1E是背光100(例如先前分別參考圖1A-1C描述和示出的背光100a、100b或100c)的基板102上的複數個光源106、反射層104和複數個元件107的俯視圖。光源106被佈置在包括多行和多列的2D陣列中。雖然圖1E中以六行和六列圖示36個光源106,但是在其他實施例中,背光100可包括以任意合適數量的行和任意合適數量的列佈置的任意合適數量的光源106。光源106也可以佈置成其他週期性圖案,例如六邊形或三角形晶格,或者佈置成準週期性或非嚴格週期性圖案。例如,在背光100的邊緣及/或拐角處的光源106之間的間隔可以較小。FIG. 1E is a top view of a plurality of light sources 106, a reflective layer 104, and a plurality of elements 107 on a substrate 102 of a backlight 100 (e.g., backlights 100a, 100b, or 100c described and shown previously with reference to FIGS. 1A-1C, respectively). The light sources 106 are arranged in a 2D array comprising a plurality of rows and a plurality of columns. Although 36 light sources 106 are illustrated in FIG. 1E in six rows and six columns, in other embodiments, the backlight 100 may include any suitable number of light sources 106 arranged in any suitable number of rows and any suitable number of columns. The light sources 106 may also be arranged in other periodic patterns, such as a hexagonal or triangular lattice, or in a quasi-periodic or non-strict periodic pattern. For example, the spacing between light sources 106 at the edges and/or corners of the backlight 100 may be smaller.

在如圖1E所示的某些示例性實施例中,每個光源106可以呈矩形,使得每個光源106的長度不同於每個光源106的寬度。在其他實施例中,每個光源106可以具有其他合適的形狀,例如正方形或圓形。在該實施例中,140所示的每個調光區包括對應每個元件107的以2×2佈置的四個光源106。一行中的光源106具有如142所示的第一間距(例如,中心到中心),並且一列中的光源106具有如144所示的第二間距(例如,中心到中心)。146表示每個調光區140內的元件107與相鄰光源106之間的距離(例如,中心到中心)。在某些示例性實施例中,第一間距142不同於第二間距144。在其他實施例中,第一間距142等於第二間距144。在圖1E所示的實施例中,第一間距142小於第二間距144。In certain exemplary embodiments as shown in FIG. 1E , each light source 106 may be rectangular such that the length of each light source 106 is different from the width of each light source 106 . In other embodiments, each light source 106 may have other suitable shapes, such as a square or a circle. In this embodiment, each dimming zone shown at 140 includes four light sources 106 arranged in a 2×2 pattern for each element 107 . The light sources 106 in a row have a first spacing (e.g., center to center) as shown at 142 , and the light sources 106 in a column have a second spacing (e.g., center to center) as shown at 144 . 146 represents the distance between the element 107 and the adjacent light source 106 within each dimming zone 140 (e.g., center to center). In certain exemplary embodiments, the first spacing 142 is different from the second spacing 144 . In other embodiments, the first spacing 142 is equal to the second spacing 144. In the embodiment shown in FIG. 1E, the first spacing 142 is smaller than the second spacing 144.

由於對應光源106附近的光較多,因此距離146越小,被每個元件107吸收的光越多。由於該吸收,在元件107的位置周圍的亮度較低。因此,為了減輕由元件107引起的較低亮度的影響,在圖案化漫射器(例如,108a、108b及/或108c)上形成本文公開的補償特徵結構(例如,118a、118b及/或118c)。Since there is more light near the corresponding light source 106, the smaller the distance 146, the more light is absorbed by each element 107. Due to this absorption, the brightness is lower around the location of the element 107. Therefore, in order to mitigate the effect of the lower brightness caused by the element 107, the compensating features (e.g., 118a, 118b, and/or 118c) disclosed herein are formed on the patterned diffuser (e.g., 108a, 108b, and/or 108c).

返回參考圖1A-1D,基板102可以是印刷電路板(PCB)、玻璃或塑膠基板或用於將電訊號傳遞到每個光源106和每個元件107以單獨控制每個光源和每個元件的其他合適的基板。基板102可以是剛性基板或撓性基板。例如,基板102可包括平板玻璃或曲面玻璃。例如,曲面玻璃可以具有小於約2000毫米的曲率半徑,例如約1500、1000、500、200或100毫米的曲率半徑。例如,反射層104可以包括諸如銀、鉑、金、銅等金屬箔;介電材料(例如,聚四氟乙烯(PTFE)等聚合物);諸如聚對苯二甲酸乙二醇酯(PET)、聚甲基丙烯酸甲酯(PMMA)、聚萘二甲酸乙二醇酯(PEN)、聚醚碸(PES)等多孔聚合物材料;多層介電干涉塗層或反射油墨,其包括諸如二氧化鈦、硫酸鋇等的白色無機顆粒或適於反射光並調節反射光和透射光的顏色的其他材料,例如彩色顏料。Referring back to FIGS. 1A-1D , substrate 102 may be a printed circuit board (PCB), a glass or plastic substrate, or other suitable substrate for transmitting electrical signals to each light source 106 and each element 107 to individually control each light source and each element. Substrate 102 may be a rigid substrate or a flexible substrate. For example, substrate 102 may include flat glass or curved glass. For example, the curved glass may have a radius of curvature of less than about 2000 mm, such as a radius of curvature of about 1500, 1000, 500, 200, or 100 mm. For example, the reflective layer 104 may include metal foils such as silver, platinum, gold, copper, etc.; dielectric materials (for example, polymers such as polytetrafluoroethylene (PTFE)); porous polymer materials such as polyethylene terephthalate (PET), polymethyl methacrylate (PMMA), polyethylene naphthalate (PEN), polyether sulfone (PES), etc.; multi-layer dielectric interference coatings or reflective inks, which include white inorganic particles such as titanium dioxide, barium sulfate, etc. or other materials suitable for reflecting light and adjusting the color of reflected light and transmitted light, such as color pigments.

例如,複數個光源106中的每一者可以是LED(例如,尺寸大於約0.5毫米)、mini-LED(例如,尺寸為約0.1毫米至約0.5毫米)、微型LED(例如,尺寸小於約0.1毫米)、有機LED(OLED)或具有約400奈米至約750奈米範圍內的波長的其他合適光源。在其他實施例中,複數個光源106中的每一者可以具有短於400奈米及/或長於750奈米的波長。來自每個光源106的光被光學耦合到載體110。本文中使用的術語「光學耦合」旨在表示光源位於載體110的表面,並且直接或藉由光學透明黏合劑與載體110光學連通,以便將光引入載體中,因全內反射而至少部分傳播。來自每個光源106的光被光學耦合到載體110,使得第一部分光由於全內反射而在載體110中橫向行進並且被圖案化反射器112和112a、112b或112c以及補償特徵結構118a、118b或118c從載體中引出,並且第二部分光由於在反射層104與圖案化反射器112和112a、112b或112c以及補償特徵結構118a、118b或118c的反射表面處的多次反射而在反射層104與圖案化反射器112和112a、112b或112c以及補償特徵結構118a、118b或118c之間橫向行進或在光學膜疊堆(圖2中示出)與反射層104之間橫向行進。For example, each of the plurality of light sources 106 may be an LED (e.g., having a size greater than about 0.5 mm), a mini-LED (e.g., having a size of about 0.1 mm to about 0.5 mm), a micro-LED (e.g., having a size less than about 0.1 mm), an organic LED (OLED), or other suitable light source having a wavelength in the range of about 400 nm to about 750 nm. In other embodiments, each of the plurality of light sources 106 may have a wavelength shorter than 400 nm and/or longer than 750 nm. Light from each light source 106 is optically coupled to the carrier 110. The term "optically coupled" as used herein is intended to mean that the light source is located on a surface of the carrier 110 and is in optical communication with the carrier 110, either directly or through an optically transparent adhesive, so that the light is introduced into the carrier for at least partial propagation due to total internal reflection. Light from each light source 106 is optically coupled to the carrier 110, so that a first portion of the light travels laterally in the carrier 110 due to total internal reflection and is extracted from the carrier by the patterned reflectors 112 and 112a, 112b or 112c and the compensating features 118a, 118b or 118c, and a second portion of the light travels laterally in the carrier 110 due to total internal reflection and is extracted from the carrier by the patterned reflectors 112 and 112a, 112b or 112c and the compensating features 118a, 118b or 118c. 2a, 112b or 112c and compensating features 118a, 118b or 118c and travel laterally between the reflective layer 104 and the patterned reflectors 112 and 112a, 112b or 112c and the compensating features 118a, 118b or 118c or travel laterally between the optical film stack (shown in FIG. 2 ) and the reflective layer 104 due to multiple reflections at the reflective surfaces of the patterned reflectors 112 and 112a, 112b or 112c and the compensating features 118a, 118b or 118c.

根據各種實施例,載體110可以包括用於照明和顯示應用的任意合適的透明材料。本文使用的術語「透明」旨在表示長度500毫米的載體在光譜可見區域(約420-750奈米)中具有大於約70%的光學透射率。在某些實施例中,長度500毫米的示例性透明材料可以在紫外(UV)區域(約100-400奈米)中具有大於約50%的光學透射率。根據各種實施例,對於約450奈米至約650奈米範圍內的波長,路徑長度為50毫米的載體可具有至少95%的光學透射率。According to various embodiments, the carrier 110 may include any suitable transparent material for lighting and display applications. The term "transparent" as used herein is intended to mean that a carrier having a length of 500 mm has an optical transmittance greater than about 70% in the visible region of the optical spectrum (about 420-750 nm). In certain embodiments, an exemplary transparent material having a length of 500 mm may have an optical transmittance greater than about 50% in the ultraviolet (UV) region (about 100-400 nm). According to various embodiments, a carrier having a path length of 50 mm may have an optical transmittance of at least 95% for wavelengths ranging from about 450 nm to about 650 nm.

載體的光學性質可能受到透明材料的折射率的影響。根據多個實施例,載體110可以具有約1.3至約1.8範圍內的折射率。在其他實施例中,載體110可以具有較低的光衰位凖(例如,由於吸收及/或散射)。例如,對於約420-750奈米範圍內的波長,載體110的光衰(α)可以小於約5分貝/米。載體110可包括聚合物材料,例如塑膠(如聚甲基丙烯酸甲酯(PMMA)、甲基丙烯酸甲酯苯乙烯(MS)、聚二甲基矽氧烷(PDMS)),聚碳酸酯(PC)或其他類似材料。載體110還可以包括玻璃材料,例如鋁矽酸鹽、鹼性鋁矽酸鹽、硼矽酸鹽、鹼性硼矽酸鹽、鋁硼矽酸鹽、鹼性鋁硼矽酸鹽、鈉鈣玻璃或其他合適的玻璃。適合用作玻璃載體110的市售玻璃的非限制性示例包括來自康寧公司的Eagle XG®、Lotus TM、Willow®、Iris TM和Gorilla®玻璃。在基板102包括曲面玻璃的示例中,載體110也可以包括曲面玻璃以形成曲面背光。在其他實施例中,載體110可以具有較高的光衰位凖。例如,對於約420-750奈米範圍內的波長,載體110的光衰(α)可以大於約5分貝/米。 The optical properties of the carrier may be affected by the refractive index of the transparent material. According to various embodiments, the carrier 110 may have a refractive index in the range of about 1.3 to about 1.8. In other embodiments, the carrier 110 may have a lower optical attenuation level (e.g., due to absorption and/or scattering). For example, for a wavelength in the range of about 420-750 nanometers, the optical attenuation (α) of the carrier 110 may be less than about 5 dB/m. The carrier 110 may include a polymer material, such as a plastic (e.g., polymethyl methacrylate (PMMA), methyl methacrylate styrene (MS), polydimethylsiloxane (PDMS)), polycarbonate (PC), or other similar materials. The carrier 110 may also include a glass material, such as an aluminosilicate, an alkaline aluminosilicate, a borosilicate, an alkaline borosilicate, an aluminum borosilicate, an alkaline aluminum borosilicate, sodium calcium glass, or other suitable glass. Non-limiting examples of commercially available glasses suitable for use as the glass carrier 110 include Eagle XG®, Lotus , Willow®, Iris , and Gorilla® glass from Corning. In examples where the substrate 102 includes curved glass, the carrier 110 may also include curved glass to form a curved backlight. In other embodiments, the carrier 110 may have a higher light decay threshold. For example, for wavelengths in the range of approximately 420-750 nm, the optical attenuation (α) of the carrier 110 may be greater than approximately 5 dB/m.

圖1F是先前參考圖1A描述和說明的圖案化漫射器108a的載體110上的複數個圖案化反射器112和112a以及複數個補償特徵結構118a的俯視圖。雖然在圖1F中圖示圖案化漫射器108a包括圖案化反射器112和112a以及補償特徵結構118a,但是在圖1B的圖案化漫射器108b或圖1C的圖案化漫射器108c中也可應用參考圖1F描述的圖案化漫射器108a的特徵。FIG1F is a top view of a plurality of patterned reflectors 112 and 112a and a plurality of compensating feature structures 118a on a carrier 110 of the patterned diffuser 108a previously described and illustrated with reference to FIG1A. Although FIG1F illustrates that the patterned diffuser 108a includes the patterned reflectors 112 and 112a and the compensating feature structures 118a, the features of the patterned diffuser 108a described with reference to FIG1F may also be applied in the patterned diffuser 108b of FIG1B or the patterned diffuser 108c of FIG1C.

每個補償特徵結構118a、118b或118c可以呈圓形(如圖1F所示)或橢圓形。如前述,每個補償特徵結構118a、118b或118c具有比佈置有每個補償特徵結構118a、118b或118c的圖案化反射器112a、112b或112c更高的透射率。每個補償特徵結構118a、118b或118c的尺寸(例如,寬度或直徑)應當足夠大,從而可以傳輸足夠量的光以補償對應元件107。然而,每個補償特徵結構118a、118b或118c的尺寸不應過大使得補償特徵結構被辨識為背光中的不均勻現象(Mura)。每個補償特徵結構118a、118b或118c的最佳尺寸可取決於光源106和用於在背光內重複循環光的光學膜的發光特性。例如,對於具有朗伯發光曲線的典型光源,每個補償特徵結構可以具有小於約1毫米的尺寸。然而,對於具有廣角發光曲線的光源106,每個補償特徵結構可以具有高達約2毫米的尺寸。Each compensating feature structure 118a, 118b or 118c can be circular (as shown in FIG. 1F) or elliptical. As mentioned above, each compensating feature structure 118a, 118b or 118c has a higher transmittance than the patterned reflector 112a, 112b or 112c on which each compensating feature structure 118a, 118b or 118c is disposed. The size (e.g., width or diameter) of each compensating feature structure 118a, 118b or 118c should be large enough so that a sufficient amount of light can be transmitted to compensate the corresponding element 107. However, the size of each compensating feature structure 118a, 118b, or 118c should not be so large that the compensating feature structure is recognized as a non-uniform phenomenon (Mura) in the backlight. The optimal size of each compensating feature structure 118a, 118b, or 118c may depend on the luminous properties of the light source 106 and the optical film used to recirculate the light within the backlight. For example, for a typical light source with a Lambertian luminous curve, each compensating feature structure may have a size of less than about 1 mm. However, for a light source 106 with a wide-angle luminous curve, each compensating feature structure may have a size of up to about 2 mm.

如前述,每個圖案化反射器112和112a、112b或112c可以包括基本平坦部分113和曲面部分114。基本平坦部分113可以比曲面部分114更具反射性,並且曲面部分114可以比基本平坦部分113更具透射性。每個曲面部分114具有隨著距基本平坦部分113的距離以連續且平滑的方式變化的特性。雖然在圖1F所示的實施例中,每個圖案化反射器112和112a的形狀是圓形,但是在其他實施例中,每個圖案化反射器112和112a、112b或112c可以具有其他合適的形狀(例如,橢圓形、矩形、六邊形等)。在載體110的上表面上直接製造圖案化反射器112和112a、112b或112c的情況下,圖案化反射器112和112a、112b或112c增加了隱藏光源106的能力。在載體110的上表面上直接製造圖案化反射器112和112a、112b或112c也節省了空間。As described above, each patterned reflector 112 and 112a, 112b or 112c may include a substantially flat portion 113 and a curved portion 114. The substantially flat portion 113 may be more reflective than the curved portion 114, and the curved portion 114 may be more transmissive than the substantially flat portion 113. Each curved portion 114 has a characteristic that changes in a continuous and smooth manner with the distance from the substantially flat portion 113. Although in the embodiment shown in FIG. 1F, the shape of each patterned reflector 112 and 112a is circular, in other embodiments, each patterned reflector 112 and 112a, 112b or 112c may have other suitable shapes (e.g., elliptical, rectangular, hexagonal, etc.). In the case where the patterned reflectors 112 and 112a, 112b or 112c are directly manufactured on the upper surface of the carrier 110, the patterned reflectors 112 and 112a, 112b or 112c increase the ability to hide the light source 106. Manufacturing the patterned reflectors 112 and 112a, 112b or 112c directly on the upper surface of the carrier 110 also saves space.

在某些示例性實施例中,每個圖案化反射器112和112a、112b或112c是漫反射器,使得每個圖案化反射器112和112a、112b或112c以足夠高的角度散射部分光線,從而光線能夠在載體110中以全內反射的方式傳播,由此進一步增強背光的效能。這種光線之後將不會在圖案化反射器112和112a、112b或112c與反射層104之間或在光學膜疊堆與反射層104之間經歷多次反射,因此避免了光功率的損失,從而提高了背光效率。在某些示例性實施例中,每個圖案化反射器112和112a、112b或112c是鏡面反射器。在其他實施例中,每個圖案化反射器112和112a、112b或112c的一些區域更具漫反射特性,另一些區域更具鏡面反射特性。In some exemplary embodiments, each patterned reflector 112 and 112a, 112b or 112c is a diffuse reflector, so that each patterned reflector 112 and 112a, 112b or 112c scatters part of the light at a sufficiently high angle, so that the light can propagate in the carrier 110 by total internal reflection, thereby further enhancing the efficiency of the backlight. Such light will not then experience multiple reflections between the patterned reflector 112 and 112a, 112b or 112c and the reflective layer 104 or between the optical film stack and the reflective layer 104, thereby avoiding the loss of optical power, thereby improving the backlight efficiency. In some exemplary embodiments, each patterned reflector 112 and 112a, 112b or 112c is a specular reflector. In other embodiments, some areas of each patterned reflector 112 and 112a, 112b or 112c have more diffuse reflective properties and other areas have more specular reflective properties.

例如,藉由用白色油墨、黑色油墨、金屬油墨或其他合適的油墨印刷(例如,噴墨印刷、絲網印刷、微印刷等)圖案,可以形成每個圖案化反射器112和112a、112b或112c。可以改變印刷密度、油墨厚度及/或空間覆蓋,以形成每個圖案化反射器112和112a、112b或112c的基本平坦部分113和曲面部分114以及每個圖案化反射器112b或112c的補償特徵結構118b或118c。在某些示例性實施例中,每個補償特徵結構118a的油墨覆蓋率可以是0%,並且每個補償特徵結構118b或118c的油墨覆蓋率可以小於50%(即,在補償特徵結構118b或118c處,載體110表面積的50%被油墨覆蓋)。也可以例如藉由物理氣相沉積(PVD)或任意數量的塗覆技術(例如槽模或噴塗)首先沉積白色或金屬材料的連續層,然後藉由光刻或其他已知的區域選擇性材料去除方法對該層進行圖案化,來形成每個圖案化反射器112和112a、112b或112c。也可以藉由從載體本身選擇性地去除材料的其他已知方法形成每個圖案化反射器112和112a、112b或112c,例如藉由對載體進行鐳射燒蝕或化學蝕刻。For example, each patterned reflector 112 and 112a, 112b or 112c can be formed by printing a pattern with white ink, black ink, metallic ink or other suitable ink (e.g., inkjet printing, screen printing, micro-printing, etc.). The printing density, ink thickness and/or spatial coverage can be varied to form the substantially flat portion 113 and the curved portion 114 of each patterned reflector 112 and 112a, 112b or 112c and the compensating feature structure 118b or 118c of each patterned reflector 112b or 112c. In certain exemplary embodiments, the ink coverage of each compensation feature 118a may be 0%, and the ink coverage of each compensation feature 118b or 118c may be less than 50% (i.e., 50% of the surface area of the carrier 110 is covered by ink at the compensation feature 118b or 118c). Each patterned reflector 112 and 112a, 112b or 112c may also be formed, for example, by first depositing a continuous layer of white or metallic material by physical vapor deposition (PVD) or any number of coating techniques (e.g., slot die or inkjet), and then patterning the layer by photolithography or other known area selective material removal methods. Each patterned reflector 112 and 112a, 112b or 112c may also be formed by other known methods of selectively removing material from the carrier itself, such as by laser ablation or chemical etching of the carrier.

在某些示例性實施例中,在使用白色光源106的情況下,在圖案化反射器112和112a、112b或112c中存在密度可變的不同反射性和吸收性材料有利於最小化背光的各個調光區中的色移。光線在圖案化反射器和反射層104(圖1A-1D)之間的多次反射可能導致光譜的紅色部分中的光損失比藍色部分中的光失損更多,反之亦然。在這種情況下,例如,利用略微著色的反射/吸收材料或具有相反色散符號的材料(在這種情況下,色散意味著反射及/或吸收的光譜依賴性),將反射設計為中性色,可以使色移最小化。當使用白色光源106時,最好使圖案化反射器112和112a、112b或112c反射和透射與綠光和紅光類似的藍光量。圖案化反射器112和112a、112b或112c可以包含大於閾值尺寸的微尺寸顆粒。例如,對於二氧化鈦,閾值尺寸可以是約140奈米,對於氧化鋁,閾值尺寸可以是約560奈米,或者對於氟化鈉,閾值尺寸可以是約750奈米。在其他示例中,閾值尺寸可以是1、2、5、10或20微米。在使用藍色光源106的某些示例性實施例中,最好使圖案化反射器112和112a、112b或112c反射比綠光和紅光更多的藍光,並且透射比綠光和紅光更少的藍光。圖案化反射器112和112a、112b或112c可以包含小於閾值尺寸的奈米尺寸顆粒。例如,對於二氧化鈦,閾值尺寸可以是約140奈米,對於氧化鋁,閾值尺寸可以是約560奈米,或者對於氟化鈉,閾值尺寸可以是約750奈米。In certain exemplary embodiments, where a white light source 106 is used, the presence of varying densities of different reflective and absorptive materials in the patterned reflector 112 and 112a, 112b, or 112c is advantageous in minimizing color shifts in various dimming zones of the backlight. Multiple reflections of light between the patterned reflector and the reflective layer 104 (FIGS. 1A-1D) may result in more light loss in the red portion of the spectrum than in the blue portion, or vice versa. In such cases, the color shift may be minimized by designing the reflection to be a neutral color, for example, using slightly tinted reflective/absorptive materials or materials with opposite signs of dispersion (in this case, dispersion means the spectral dependence of the reflection and/or absorption). When using a white light source 106, it is preferred that the patterned reflector 112 and 112a, 112b, or 112c reflect and transmit an amount of blue light similar to green and red light. The patterned reflector 112 and 112a, 112b, or 112c may contain micro-sized particles that are larger than a threshold size. For example, for titanium dioxide, the threshold size may be about 140 nanometers, for aluminum oxide, the threshold size may be about 560 nanometers, or for sodium fluoride, the threshold size may be about 750 nanometers. In other examples, the threshold size may be 1, 2, 5, 10, or 20 micrometers. In certain exemplary embodiments using a blue light source 106, it is preferred that the patterned reflector 112 and 112a, 112b, or 112c reflect more blue light than green and red light, and transmit less blue light than green and red light. The patterned reflector 112 and 112a, 112b or 112c may include nano-sized particles that are smaller than a threshold size. For example, for titanium dioxide, the threshold size may be about 140 nanometers, for aluminum oxide, the threshold size may be about 560 nanometers, or for sodium fluoride, the threshold size may be about 750 nanometers.

圖案化漫射器108a、108b或108c具有空間變化的透射率或空間變化的色移。由於圖案化漫射器108a、108b或108c的空間反射率和空間透射率相互關聯,因此圖案化漫射器也具有空間變化的反射率。例如,在圖案化漫射器108a、108b或108c的相同位置處,較小(或較大)的反射率與較大(或較小)的透射率相關聯。The patterned diffuser 108a, 108b, or 108c has a spatially varying transmittance or a spatially varying color shift. Since the spatial reflectance and spatial transmittance of the patterned diffuser 108a, 108b, or 108c are correlated, the patterned diffuser also has a spatially varying reflectance. For example, at the same position of the patterned diffuser 108a, 108b, or 108c, a smaller (or larger) reflectance is associated with a larger (or smaller) transmittance.

圖2是示例性液晶顯示器(LCD)150的截面圖。LCD 150包括背光100a,背光100a包括如先前參考圖1A所述和所示的圖案化漫射器108a。雖然圖2中圖示背光100a包括圖案化漫射器108a,但是在圖1B的背光100b或圖1C的背光100c中也可以應用參考圖2描述的LCD 150的特徵。此外,LCD 150的背光可選地包括位於背光100a上方的漫射板152、位於漫射板152上方的顏色轉換層154(例如,量子點膜或磷光膜)、位於顏色轉換層154上方的稜鏡膜156、以及位於稜鏡膜156上方的反射偏振器158。LCD 150還包括位於背光的反射偏振器158上方的顯示面板160。在某些示例性實施例中,反射偏振器158可黏結到顯示面板160。FIG. 2 is a cross-sectional view of an exemplary liquid crystal display (LCD) 150. The LCD 150 includes a backlight 100a, which includes a patterned diffuser 108a as previously described and shown with reference to FIG. 1A. Although FIG. 2 illustrates that the backlight 100a includes the patterned diffuser 108a, the features of the LCD 150 described with reference to FIG. 2 can also be applied in the backlight 100b of FIG. 1B or the backlight 100c of FIG. 1C. In addition, the backlight of the LCD 150 optionally includes a diffuser plate 152 located above the backlight 100a, a color conversion layer 154 (e.g., a quantum dot film or a phosphor film) located above the diffuser plate 152, a prismatic film 156 located above the color conversion layer 154, and a reflective polarizer 158 located above the prismatic film 156. The LCD 150 also includes a display panel 160 positioned above a reflective polarizer 158 of the backlight. In certain exemplary embodiments, the reflective polarizer 158 may be bonded to the display panel 160.

為了保持光源106與載體110上的圖案化反射器112和112a之間的對準以使背光100a正常工作,如果載體110和基板102由相同或相似類型的材料製成,則最好使載體110上的圖案化反射器112和112a以及基板102上的光源106在較大的操作溫度範圍內彼此良好地配準。在某些示例性實施例中,載體110和基板102由相同的塑膠材料製成。在其他實施方式中,載體110和基板102由相同或相似類型的玻璃製成。In order to maintain the alignment between the light source 106 and the patterned reflectors 112 and 112a on the carrier 110 so that the backlight 100a works properly, it is best to keep the patterned reflectors 112 and 112a on the carrier 110 and the light source 106 on the substrate 102 well aligned with each other over a wide range of operating temperatures if the carrier 110 and the substrate 102 are made of the same or similar types of materials. In some exemplary embodiments, the carrier 110 and the substrate 102 are made of the same plastic material. In other embodiments, the carrier 110 and the substrate 102 are made of the same or similar types of glass.

保持基板102上的光源106和載體110對準的替代解決方案是使用高撓性基板。高撓性基板可以由聚醯亞胺或允許部件焊接的其他耐高溫聚合物膜製成。高撓性基板也可以由諸如FR4或玻璃纖維等材料製成,但是比一般厚度小得多。在某些示例性實施例中,0.4毫米厚度的FR4材料可以用於基板102,其撓性足以承受由變化的操作溫度引起的尺寸變化。An alternative solution to maintain alignment of the light source 106 and the carrier 110 on the substrate 102 is to use a highly flexible substrate. The highly flexible substrate can be made of polyimide or other high temperature resistant polymer films that allow components to be soldered. The highly flexible substrate can also be made of materials such as FR4 or fiberglass, but with much less thickness than typical. In certain exemplary embodiments, a 0.4 mm thick FR4 material can be used for the substrate 102, which is flexible enough to withstand dimensional changes caused by varying operating temperatures.

圖3A-3E是包括圖案化漫射器的其他示例性背光的多個視圖。圖3A是示例性背光100e的簡化截面圖,圖3B是示例性背光100e的俯視圖。除了在背光100e中用圖案化漫射器108e代替圖案化漫射器108a以外,背光100e類似於先前參考圖1A描述和示出的背光100a。圖案化漫射器108e包括載體110(例如,導光板)和複數個圖案化反射器112、112d和112e。複數個圖案化反射器112、112d和112e佈置在載體110的上表面。在其他實施例中,複數個圖案化反射器112、112d和112e可以佈置在載體110的下表面。複數個圖案化反射器112、112d和112e包括位於與對應元件107相鄰佈置的對應光源106上方的非對稱反射器112d和112e以及位於不與對應元件107相鄰佈置的對應光源106上方的對稱反射器112。非對稱反射器112d和112e可以呈橢圓形,而對稱反射器112可以呈圓形或具有與非對稱反射器不同的面積的橢圓形。在該實施例中,形成非對稱反射器112d和112e以減輕元件107的吸收效應。3A-3E are multiple views of other exemplary backlights including patterned diffusers. FIG. 3A is a simplified cross-sectional view of an exemplary backlight 100e, and FIG. 3B is a top view of an exemplary backlight 100e. The backlight 100e is similar to the backlight 100a previously described and shown with reference to FIG. 1A, except that a patterned diffuser 108e is used to replace the patterned diffuser 108a in the backlight 100e. The patterned diffuser 108e includes a carrier 110 (e.g., a light guide plate) and a plurality of patterned reflectors 112, 112d, and 112e. The plurality of patterned reflectors 112, 112d, and 112e are disposed on the upper surface of the carrier 110. In other embodiments, the plurality of patterned reflectors 112, 112d, and 112e may be disposed on the lower surface of the carrier 110. The plurality of patterned reflectors 112, 112d and 112e include asymmetric reflectors 112d and 112e located above the corresponding light source 106 disposed adjacent to the corresponding element 107 and a symmetric reflector 112 located above the corresponding light source 106 not disposed adjacent to the corresponding element 107. The asymmetric reflectors 112d and 112e may be elliptical, while the symmetric reflector 112 may be circular or have an elliptical shape with a different area from the asymmetric reflector. In this embodiment, the asymmetric reflectors 112d and 112e are formed to reduce the absorption effect of the element 107.

在某些示例性實施例中,位於對應的第一光源106上方的第一非對稱反射器112d鄰近對應元件107的第一側並且具有第一面積,並且位於對應的第二光源106上方的第二非對稱反射器112e鄰近對應元件107的第二側並且具有不同於第一面積的第二面積。第一光源106(例如,第一光源的中心170)可以佈置在距對應元件107(例如,對應元件的中心172)第一距離處(如174所示)。第二光源106(例如,第二光源的中心170)可以佈置在距對應元件107(例如,對應元件的中心172)第二距離處(如176所示)。在某些示例性實施例中,第一光源106可以比第二光源106更靠近對應元件107,使得距離174小於距離176。在該實施例中,每個第一圖案化反射器112d的第一面積小於每個第二圖案化反射器112e的第二面積。每個圖案化反射器112的中心可以與對應光源106(例如,對應光源的中心170)對準,或者每個圖案化反射器112的中心可以相對於對應光源(例如,對應光源的中心170)偏移。鄰近對應元件107的非對稱圖案化反射器112d和112e減輕由於吸收性元件107引起的影響來改善背光100e的亮度均勻性。In some exemplary embodiments, a first asymmetric reflector 112d located above a corresponding first light source 106 is adjacent to a first side of the corresponding element 107 and has a first area, and a second asymmetric reflector 112e located above a corresponding second light source 106 is adjacent to a second side of the corresponding element 107 and has a second area different from the first area. The first light source 106 (e.g., a center 170 of the first light source) can be arranged at a first distance from the corresponding element 107 (e.g., a center 172 of the corresponding element) as shown at 174. The second light source 106 (e.g., a center 170 of the second light source) can be arranged at a second distance from the corresponding element 107 (e.g., a center 172 of the corresponding element) as shown at 176. In some exemplary embodiments, the first light source 106 can be closer to the corresponding element 107 than the second light source 106, so that the distance 174 is less than the distance 176. In this embodiment, the first area of each first patterned reflector 112d is less than the second area of each second patterned reflector 112e. The center of each patterned reflector 112 can be aligned with the corresponding light source 106 (e.g., the center 170 of the corresponding light source), or the center of each patterned reflector 112 can be offset relative to the corresponding light source (e.g., the center 170 of the corresponding light source). The asymmetric patterned reflectors 112d and 112e adjacent to the corresponding element 107 reduce the impact caused by the absorptive element 107 to improve the brightness uniformity of the backlight 100e.

圖3C是示例性背光100f的簡化截面圖,圖3D是示例性背光100f的俯視圖。除了在背光100f中元件107佈置在不同的位置並用圖案化漫射器108f代替圖案化漫射器108e以外,背光100f類似於先前參考圖3A和圖3B描述和示出的背光100e。圖案化漫射器108f包括載體110(例如,導光板)和複數個圖案化反射器112和112f。複數個圖案化反射器112和112f佈置在載體110的上表面。在其他實施例中,複數個圖案化反射器112和112f可以佈置在載體110的下表面。複數個圖案化反射器112和112f包括位於與對應元件107相鄰佈置的對應光源106上方的非對稱反射器112f和位於不與對應元件107相鄰佈置的對應光源106上方的對稱反射器112。非對稱反射器112f可以呈橢圓形,而對稱反射器112可以呈圓形。在該實施例中,形成非對稱反射器112f以減輕元件107的吸收效應。FIG. 3C is a simplified cross-sectional view of an exemplary backlight 100f, and FIG. 3D is a top view of an exemplary backlight 100f. The backlight 100f is similar to the backlight 100e described and shown previously with reference to FIG. 3A and FIG. 3B, except that element 107 is arranged at a different position in the backlight 100f and patterned diffuser 108f is used instead of patterned diffuser 108e. The patterned diffuser 108f includes a carrier 110 (e.g., a light guide plate) and a plurality of patterned reflectors 112 and 112f. The plurality of patterned reflectors 112 and 112f are arranged on the upper surface of the carrier 110. In other embodiments, the plurality of patterned reflectors 112 and 112f can be arranged on the lower surface of the carrier 110. The plurality of patterned reflectors 112 and 112f include an asymmetric reflector 112f located above the corresponding light source 106 disposed adjacent to the corresponding element 107 and a symmetric reflector 112 located above the corresponding light source 106 not disposed adjacent to the corresponding element 107. The asymmetric reflector 112f may be elliptical, while the symmetric reflector 112 may be circular. In this embodiment, the asymmetric reflector 112f is formed to reduce the absorption effect of the element 107.

在某些示例性實施例中,位於對應的第一光源106上方的第一非對稱反射器112f鄰近對應元件107的第一側,位於對應的第二光源106上方的第二非對稱反射器112f(具有相反的取向)鄰近對應元件107的第二側。非對稱反射器112f都具有相同的面積。第一光源106(例如,第一光源的中心170)可以佈置在距對應元件107(例如,對應元件的中心172)第一距離處(如174所示)。第二光源106(例如,第二光源的中心170)可以佈置在距對應元件107(例如,對應元件的中心172)第二距離處(如176所示)。在該實施例中,第一距離174等於第二距離176。每個圖案化反射器112的中心可以與對應光源106(例如,對應光源的中心170)對準,或者每個圖案化反射器112的中心可以相對於對應光源(例如,對應光源的中心170)偏移。鄰近對應元件107的非對稱圖案化反射器112f減輕由於吸收性元件107引起的影響來改善背光100f的亮度均勻性。In some exemplary embodiments, a first asymmetric reflector 112f located above a corresponding first light source 106 is adjacent to a first side of a corresponding element 107, and a second asymmetric reflector 112f (having an opposite orientation) located above a corresponding second light source 106 is adjacent to a second side of the corresponding element 107. The asymmetric reflectors 112f all have the same area. The first light source 106 (e.g., the center 170 of the first light source) can be arranged at a first distance (as shown by 174) from the corresponding element 107 (e.g., the center 172 of the corresponding element). The second light source 106 (e.g., the center 170 of the second light source) can be arranged at a second distance (as shown by 176) from the corresponding element 107 (e.g., the center 172 of the corresponding element). In this embodiment, the first distance 174 is equal to the second distance 176. The center of each patterned reflector 112 can be aligned with the corresponding light source 106 (e.g., the center 170 of the corresponding light source), or the center of each patterned reflector 112 can be offset relative to the corresponding light source (e.g., the center 170 of the corresponding light source). The asymmetric patterned reflector 112f adjacent to the corresponding element 107 reduces the effect caused by the absorptive element 107 to improve the brightness uniformity of the backlight 100f.

圖3E是示例性背光100g的俯視圖。除了在背光100g中元件107佈置在不同的位置並且用圖案化漫射器108g代替圖案化漫射器108e以外,背光100g類似於先前參考圖3A和圖3B描述和示出的背光100e。圖案化漫射器108g包括位於複數個光源106和複數個元件107上方的複數個圖案化反射器112和112g。複數個圖案化反射器112和112g包括位於與對應元件107相鄰佈置的對應光源106上方的非對稱反射器112g,以及位於不與對應元件107相鄰佈置的對應光源106上方的對稱反射器112。Fig. 3E is a top view of an exemplary backlight 100g. The backlight 100g is similar to the backlight 100e previously described and shown with reference to Fig. 3A and Fig. 3B, except that the elements 107 are arranged at different positions in the backlight 100g and the patterned diffuser 108g is used instead of the patterned diffuser 108e. The patterned diffuser 108g includes a plurality of patterned reflectors 112 and 112g located above the plurality of light sources 106 and the plurality of elements 107. The plurality of patterned reflectors 112 and 112g include an asymmetric reflector 112g located above the corresponding light sources 106 arranged adjacent to the corresponding elements 107, and a symmetric reflector 112 located above the corresponding light sources 106 not arranged adjacent to the corresponding elements 107.

在此實施例中,四個圖案化反射器112g鄰近每一元件107,使得元件107與四個圖案化反射器112g中的每一者的距離相等。每個圖案化反射器112g呈減去面向元件107的缺失部分的圓形,使得每一元件107正上方的載體110的圓形部分不包括圖案化反射器的材料。鄰近對應元件107的非對稱圖案化反射器112g減輕由於吸收性元件107引起的影響來改善背光100g的亮度均勻性。In this embodiment, four patterned reflectors 112g are adjacent to each element 107, such that the element 107 is equidistant from each of the four patterned reflectors 112g. Each patterned reflector 112g is circular minus a missing portion facing the element 107, such that the circular portion of the carrier 110 directly above each element 107 does not include material of the patterned reflector. The asymmetric patterned reflectors 112g adjacent to the corresponding element 107 mitigate the effects caused by the absorptive element 107 to improve the brightness uniformity of the backlight 100g.

圖4A-4D是包括圖案化漫射器的又一示例性背光的多個視圖。圖4A是示例性背光200a的簡化截面圖,圖4B是示例性背光200a的俯視圖。背光200a可包括基板102、反射層104、複數個光源106和圖案化漫射器208a。圖案化漫射器208a包括載體110(例如,導光板)和複數個圖案化反射器212a。複數個光源106鄰近基板102(例如,佈置在基板102上)並且與基板102電學連通。反射層104在基板102上並圍繞每個光源106。在某些示例性實施例中,基板102可以是反光的,從而可以不包括反射層104。圖案化漫射器208a位於複數個光源106上方並且光學耦合到每個光源106。在某些示例性實施例中,可以使用光學黏合劑(未示出)將複數個光源106耦合到圖案化漫射器208a。光學黏合劑(例如,苯基矽酮)的折射率可大於或等於載體110的折射率。複數個圖案化反射器212a佈置在載體110的上表面。在其他實施例中,複數個圖案化反射器212a可以佈置在載體110的下表面。每個圖案化反射器212a位於對應光源106上方。在該實施例中,如230所示,每個圖案化反射器212a的中心與對應光源106(例如,對應光源的中心)對準。4A-4D are multiple views of yet another exemplary backlight including a patterned diffuser. FIG. 4A is a simplified cross-sectional view of an exemplary backlight 200a, and FIG. 4B is a top view of an exemplary backlight 200a. Backlight 200a may include a substrate 102, a reflective layer 104, a plurality of light sources 106, and a patterned diffuser 208a. Patterned diffuser 208a includes a carrier 110 (e.g., a light guide plate) and a plurality of patterned reflectors 212a. A plurality of light sources 106 are adjacent to substrate 102 (e.g., disposed on substrate 102) and are electrically connected to substrate 102. Reflective layer 104 is on substrate 102 and surrounds each light source 106. In some exemplary embodiments, substrate 102 may be reflective, so that reflective layer 104 may not be included. The patterned diffuser 208a is located above the plurality of light sources 106 and optically coupled to each of the light sources 106. In certain exemplary embodiments, the plurality of light sources 106 may be coupled to the patterned diffuser 208a using an optical adhesive (not shown). The refractive index of the optical adhesive (e.g., phenyl silicone) may be greater than or equal to the refractive index of the carrier 110. A plurality of patterned reflectors 212a are disposed on the upper surface of the carrier 110. In other embodiments, the plurality of patterned reflectors 212a may be disposed on the lower surface of the carrier 110. Each patterned reflector 212a is located above a corresponding light source 106. In this embodiment, as shown at 230, the center of each patterned reflector 212a is aligned with the corresponding light source 106 (e.g., the center of the corresponding light source).

每個圖案化反射器212a具有變化的透射率,並且可以具有沿圖案化反射器的寬度或直徑的厚度剖面,該厚度剖面包括如213所示的基本平坦部分、如214所示的從基本平坦部分213延伸並圍繞基本平坦部分213的曲面部分、以及位於相鄰的圖案化反射器212a的每個分界處的拐角部分215。基本平坦部分213可具有粗糙的表面輪廓(例如,整個基本平坦部分的厚度略有變化)。在某些示例性實施例中,基本平坦部分213的厚度變化不超過基本平坦部分的平均厚度的正負20%。在該實施例中,在垂直於載體110的方向上測量的平均厚度被定義為基本平坦部分的最大厚度(T max)加上基本平坦部分的最小厚度(T min)除以2(即,(T max+T min)/2)。例如,對於約100微米的基本平坦部分213的平均厚度,基本平坦部分的最大厚度可等於或小於約120微米,並且基本平坦部分的最小厚度可等於或大於約80微米。在其他實施例中,基本平坦部分213的厚度變化不超過基本平坦部分的平均厚度的正負15%。例如,對於約80微米的基本平坦部分213的平均厚度,基本平坦部分的最大厚度可等於或小於約92微米,並且基本平坦部分的最小厚度可等於或大於約68微米。 Each patterned reflector 212a has a varying transmittance and may have a thickness profile along the width or diameter of the patterned reflector, the thickness profile including a substantially flat portion as shown in 213, a curved portion extending from and surrounding the substantially flat portion 213 as shown in 214, and a corner portion 215 located at each boundary of adjacent patterned reflectors 212a. The substantially flat portion 213 may have a rough surface profile (e.g., the thickness of the entire substantially flat portion varies slightly). In certain exemplary embodiments, the thickness of the substantially flat portion 213 varies by no more than plus or minus 20% of the average thickness of the substantially flat portion. In this embodiment, the average thickness measured in a direction perpendicular to the carrier 110 is defined as the maximum thickness (T max ) of the substantially flat portion plus the minimum thickness (T min ) of the substantially flat portion divided by 2 (i.e., (T max +T min )/2). For example, for an average thickness of the substantially flat portion 213 of about 100 microns, the maximum thickness of the substantially flat portion may be equal to or less than about 120 microns, and the minimum thickness of the substantially flat portion may be equal to or greater than about 80 microns. In other embodiments, the thickness of the substantially flat portion 213 varies by no more than plus or minus 15% of the average thickness of the substantially flat portion. For example, for an average thickness of the substantially flat portion 213 of about 80 microns, the maximum thickness of the substantially flat portion may be equal to or less than about 92 microns, and the minimum thickness of the substantially flat portion may be equal to or greater than about 68 microns.

在其他實施例中,基本平坦部分213的厚度變化不超過基本平坦部分的平均厚度的正負10%。例如,對於約50微米的基本平坦部分213的平均厚度,基本平坦部分的最大厚度可等於或小於約55微米,並且基本平坦部分的最小厚度可等於或大於約45微米。在其他實施例中,基本平坦部分213的厚度變化不超過基本平坦部分的平均厚度的正負5%。可以用厚度變化與距圖案化反射器212a的中心的距離變化的絕對比率來定義曲面部分214。曲面部分214的斜率可以隨著距圖案化反射器212a的中心的距離而減小。在某些示例性實施例中,斜率在基本平坦部分213附近最高,隨著遠離圖案化反射器212a的中心而快速減小,然後隨著進一步遠離圖案化反射器的中心而緩慢減小。拐角部分215可包括曲面部分,該曲面部分具有隨著距圖案化反射器212a的中心的距離而增大的斜率,然後在相鄰的圖案化反射器212a的分界處到達基本平坦部分。拐角部分215的基本平坦部分可以具有與基本平坦部分213基本上相同的厚度或區域覆蓋率,或者拐角部分215的基本平坦部分的厚度或區域覆蓋率小於基本平坦部分213的厚度或區域覆蓋率。In other embodiments, the thickness of the substantially flat portion 213 varies by no more than plus or minus 10% of the average thickness of the substantially flat portion. For example, for an average thickness of the substantially flat portion 213 of about 50 microns, the maximum thickness of the substantially flat portion may be equal to or less than about 55 microns, and the minimum thickness of the substantially flat portion may be equal to or greater than about 45 microns. In other embodiments, the thickness of the substantially flat portion 213 varies by no more than plus or minus 5% of the average thickness of the substantially flat portion. The curved portion 214 may be defined by an absolute ratio of the thickness variation to the distance variation from the center of the patterned reflector 212a. The slope of the curved portion 214 may decrease with the distance from the center of the patterned reflector 212a. In certain exemplary embodiments, the slope is highest near the substantially flat portion 213, decreases rapidly as it moves away from the center of the patterned reflector 212a, and then decreases slowly as it moves further away from the center of the patterned reflector. The corner portion 215 may include a curved portion having a slope that increases with distance from the center of the patterned reflector 212a and then reaches a substantially flat portion at a boundary of adjacent patterned reflectors 212a. The substantially flat portion of the corner portion 215 may have substantially the same thickness or area coverage as the substantially flat portion 213, or the thickness or area coverage of the substantially flat portion of the corner portion 215 may be less than the thickness or area coverage of the substantially flat portion 213.

如220所示(在平行於基板102的平面中)的每個基本平坦部分213的尺寸L0(即,寬度或直徑)可以大於如124所示(在平行於基板102的平面中)的每個對應光源106的尺寸(即,寬度或直徑)。每個基本平坦部分213的尺寸220可以小於每個對應光源106的尺寸124乘以預定值。在某些示例性實施例中,當每個光源106的尺寸124大於或等於約0.5毫米時,該預定值可以是約2或3,使得每個基本平坦部分213的尺寸小於每個光源106的尺寸的三倍。當每個光源106的尺寸124小於0.5毫米時,可以根據光源106和圖案化反射器212a之間的對準能力決定該預定值,使得每個圖案化反射器212a的每個基本平坦部分213的尺寸在比每個光源106的尺寸大約100微米至約300微米的範圍內。每個基本平坦部分213足夠大以使每個圖案化反射器212a可以與對應光源106對準,並且足夠小以實現合適的亮度均勻性和顏色均勻性。The dimension L0 (i.e., width or diameter) of each substantially flat portion 213 as indicated at 220 (in a plane parallel to the substrate 102) may be greater than the dimension (i.e., width or diameter) of each corresponding light source 106 as indicated at 124 (in a plane parallel to the substrate 102). The dimension 220 of each substantially flat portion 213 may be less than the dimension 124 of each corresponding light source 106 multiplied by a predetermined value. In certain exemplary embodiments, when the dimension 124 of each light source 106 is greater than or equal to about 0.5 mm, the predetermined value may be about 2 or 3, such that the dimension of each substantially flat portion 213 is less than three times the dimension of each light source 106. When the size 124 of each light source 106 is less than 0.5 mm, the predetermined value may be determined based on the alignment capability between the light source 106 and the patterned reflector 212 a, so that the size of each substantially flat portion 213 of each patterned reflector 212 a is in the range of about 100 μm to about 300 μm larger than the size of each light source 106. Each substantially flat portion 213 is large enough to allow each patterned reflector 212 a to be aligned with the corresponding light source 106, and small enough to achieve appropriate brightness uniformity and color uniformity.

222表示(在平行於基板102的平面中)每個圖案化反射器212a的曲面部分214與基本平坦部分組合的尺寸L1(即,寬度或直徑)。223表示(在平行於基板102的平面中)每個圖案化反射器212a的尺寸L2(即,寬度或直徑)。126表示相鄰光源106之間的間距P。雖然在圖4A中沿一個方向圖示間距,但是間距在與所示方向正交的方向上可以不同。間距可以例如是約90、45、30、10、5、2、1或0.5毫米,大於約90毫米,或小於約0.5毫米。在某些示例性實施例中,每個圖案化反射器212a的尺寸222與間距126的比率L1/P在約0.45至0.9的範圍內。該比率可以隨著光源106的間距126以及每個光源的發射表面與對應的圖案化反射器212a之間的距離而變化。例如,對於約5毫米的間距126以及每個光源的發射表面與對應的圖案化反射器之間的約0.2毫米的距離,該比率可以等於約0.50、0.60、0.70、0.80或0.90。每個圖案化反射器212a的尺寸223與間距126的比率L2/P是1.0。222 represents the dimension L1 (i.e., width or diameter) of the combined curved portion 214 and substantially flat portion of each patterned reflector 212a (in a plane parallel to the substrate 102). 223 represents the dimension L2 (i.e., width or diameter) of each patterned reflector 212a (in a plane parallel to the substrate 102). 126 represents the spacing P between adjacent light sources 106. Although the spacing is illustrated along one direction in FIG. 4A, the spacing may be different in a direction orthogonal to the illustrated direction. The spacing may be, for example, about 90, 45, 30, 10, 5, 2, 1, or 0.5 mm, greater than about 90 mm, or less than about 0.5 mm. In certain exemplary embodiments, the ratio L1/P of the size 222 of each patterned reflector 212a to the spacing 126 is in the range of about 0.45 to 0.9. The ratio can vary with the spacing 126 of the light sources 106 and the distance between the emitting surface of each light source and the corresponding patterned reflector 212a. For example, for a spacing 126 of about 5 mm and a distance of about 0.2 mm between the emitting surface of each light source and the corresponding patterned reflector, the ratio can be equal to about 0.50, 0.60, 0.70, 0.80 or 0.90. The ratio L2/P of the size 223 of each patterned reflector 212a to the spacing 126 is 1.0.

因此,如圖4B中226所示,每個圖案化反射器212a的反射率從第一位置處的第一值變化為小於第一值的第二位置(例如,231)處的第二值,並且從第二位置處的第二值變化為大於第二值的第三位置(例如,232)處的第三值,該第一位置位於每個圖案化反射器212a的中心(例如,230),該第二位置距第一位置第一距離,該第三位置距第一位置第二距離,第二距離大於第一距離。在某些示例性實施例中,第三值等於第一值。每個圖案化反射器212a的第三位置鄰近圖案化反射器212a與至少兩個(例如,三個)相鄰圖案化反射器212a的相交處。Therefore, as shown in 226 in FIG. 4B , the reflectivity of each patterned reflector 212 a changes from a first value at a first position to a second value at a second position (e.g., 231) less than the first value, and changes from the second value at the second position to a third value at a third position (e.g., 232) greater than the second value, the first position being located at the center (e.g., 230) of each patterned reflector 212 a, the second position being a first distance from the first position, and the third position being a second distance from the first position, the second distance being greater than the first distance. In some exemplary embodiments, the third value is equal to the first value. The third position of each patterned reflector 212 a is adjacent to the intersection of the patterned reflector 212 a and at least two (e.g., three) adjacent patterned reflectors 212 a.

每個圖案化反射器212a將對應光源106發射的至少一部分光反射到載體110中。每個圖案化反射器212a具有鏡面反射和漫反射。鏡面反射光從載體110的底表面射出。雖然鏡面反射光由於反射層104和載體110之間的反射,或者由於反射層104和顏色轉換層、漫射片或漫射板(如圖2所示)之間的反射而主要橫向行進,但是由於反射層104的不完全反射,可能發生一些光損失。漫反射光具有相對於載體110的法線測量的0度至90度的角分佈。約50%的漫反射光具有大於全內反射臨界角( )的角度。因此,漫反射光因全內反射而橫向行進而沒有任何損失,直到隨後利用圖案化反射器212a將光從載體110中引出。 Each patterned reflector 212a reflects at least a portion of the light emitted by the corresponding light source 106 into the carrier 110. Each patterned reflector 212a has specular reflection and diffuse reflection. The specular reflected light is emitted from the bottom surface of the carrier 110. Although the specular reflected light mainly travels laterally due to reflection between the reflective layer 104 and the carrier 110, or due to reflection between the reflective layer 104 and the color conversion layer, diffuser or diffuser plate (as shown in Figure 2), some light loss may occur due to incomplete reflection of the reflective layer 104. The diffusely reflected light has an angular distribution of 0 degrees to 90 degrees measured relative to the normal of the carrier 110. About 50% of the diffusely reflected light has an angle greater than the critical angle of total internal reflection ( ). Therefore, the diffusely reflected light travels laterally due to total internal reflection without any loss until the light is subsequently guided out of the carrier 110 using the patterned reflector 212a.

與圖案化反射器不包括拐角部分215的背光相比,每個圖案化反射器212a的拐角部分215可以改善背光200a的亮度均勻性。拐角部分215局部地增強光的引出並增加背光200a的亮度。在每個光源區域的中心處,圖案化玻璃漫射器208a將直接來自光源106的大部分光反射回來,並產生全內反射光。全內反射光在載體110中橫向行進,並在光源區域的拐角處被引出。然而,隨著距光源106的距離增加,全內反射光強度減小。為了減輕這種影響,利用拐角特徵結構215在光源區域的拐角處提高光的引出效率。距光源106中心的距離(L D)(拐角特徵結構215最好超出該距離)取決於多個因素,包括每個光源106的尺寸124、光源106之間的間距126、以及光源106與圖案化玻璃漫射器208a之間的光學距離(OD)。對於小光源106(例如,小於約0.5毫米)和可忽略的OD(例如,小於約1毫米),L D可以大於約3毫米。如果OD不可忽略(例如,大於約1毫米),則L D可以等於約3+OD/2毫米。如果間距126小於L D的兩倍,則可能不需要拐角部分215。另外,如果OD足夠大,則可能不需要拐角部分215,因為較大的OD改善了亮度均勻性。在某些示例性實施例中,當光源間距與OD之比至少為2時,拐角部分215是有益的。可以用與每個圖案化反射器212a的中心圖案相同的油墨來印刷拐角部分215,或者可以用不同的油墨來單獨印刷拐角部分215。拐角部分215的油墨可以是白色油墨或透明油墨。拐角部分215的區域覆蓋率可以是約50%或更大以增強光的引出。可以使用任意合適的製程形成拐角部分215,例如噴墨印刷、絲網印刷、微印刷等。 Compared with the backlight in which the patterned reflector does not include the corner portion 215, the corner portion 215 of each patterned reflector 212a can improve the brightness uniformity of the backlight 200a. The corner portion 215 locally enhances the extraction of light and increases the brightness of the backlight 200a. At the center of each light source area, the patterned glass diffuser 208a reflects back most of the light directly from the light source 106 and generates total internal reflection light. The total internal reflection light travels horizontally in the carrier 110 and is extracted at the corner of the light source area. However, as the distance from the light source 106 increases, the total internal reflection light intensity decreases. In order to reduce this effect, the corner feature structure 215 is used to improve the extraction efficiency of light at the corner of the light source area. The distance ( LD ) from the center of the light source 106, beyond which the corner feature 215 is preferably located, depends on a number of factors, including the size 124 of each light source 106, the spacing 126 between the light sources 106, and the optical distance (OD) between the light sources 106 and the patterned glass diffuser 208a. For small light sources 106 (e.g., less than about 0.5 mm) and negligible OD (e.g., less than about 1 mm), the LD can be greater than about 3 mm. If the OD is not negligible (e.g., greater than about 1 mm), the LD can be equal to about 3+OD/2 mm. If the spacing 126 is less than twice the LD , the corner portion 215 may not be needed. In addition, if the OD is large enough, the corner portion 215 may not be needed because a larger OD improves brightness uniformity. In certain exemplary embodiments, the corner portion 215 is beneficial when the ratio of the light source spacing to the OD is at least 2. The corner portion 215 can be printed with the same ink as the central pattern of each patterned reflector 212a, or the corner portion 215 can be printed separately with a different ink. The ink of the corner portion 215 can be a white ink or a transparent ink. The area coverage of the corner portion 215 can be about 50% or more to enhance the extraction of light. The corner portion 215 can be formed using any suitable process, such as inkjet printing, screen printing, micro-printing, etc.

圖4C是示例性背光200B的俯視圖。背光200b類似於先前參考圖4A和圖4B描述和示出的背光200a,不同之處在於背光200b包括圖案化漫射器208b代替圖案化漫射器208a。圖案化漫射器208b包括載體110(例如,導光板)和複數個圖案化反射器212b。複數個圖案化反射器212b佈置在載體110的上表面。在其他實施例中,複數個圖案化反射器212b可佈置在載體110的下表面。每個圖案化反射器212b位於對應光源106上方。在該實施例中,每個圖案化反射器212b的中心與對應光源106(例如,對應光源的中心)對準。FIG. 4C is a top view of an exemplary backlight 200B. Backlight 200b is similar to the backlight 200a previously described and shown with reference to FIG. 4A and FIG. 4B, except that backlight 200b includes a patterned diffuser 208b instead of patterned diffuser 208a. Patterned diffuser 208b includes a carrier 110 (e.g., a light guide plate) and a plurality of patterned reflectors 212b. A plurality of patterned reflectors 212b are arranged on the upper surface of carrier 110. In other embodiments, a plurality of patterned reflectors 212b may be arranged on the lower surface of carrier 110. Each patterned reflector 212b is located above a corresponding light source 106. In this embodiment, the center of each patterned reflector 212b is aligned with a corresponding light source 106 (e.g., the center of the corresponding light source).

在該實施例中,每個圖案化反射器212b類似於每個圖案化反射器212a,不同之處在於圖案化反射器212b包括矩形特徵結構240而不是拐角特徵結構215。每個矩形特徵結構240鄰近(例如,直接相鄰)圖案化反射器212b與相鄰圖案化反射器212b的相交處。每個圖案化反射器212b可包括位於每個圖案化反射器的圓形中心圖案的相對側的兩個矩形特徵結構240。如圖4C中242所示,每個圖案化反射器212b的反射率從第一位置處的第一值變化為小於第一值的第二位置(例如,243)處的第二值,並且從第二位置處的第二值變化為大於第二值的第三位置(例如,244)處的第三值,該第一位置位於每個圖案化反射器212b的中心(例如,230),該第二位置距第一位置第一距離,該第三位置距第一位置第二距離,第二距離大於第一距離。在某些示例性實施例中,第三值等於第一值。在其他實施例中,第三值小於第一值。每個圖案化反射器212b的第三位置鄰近圖案化反射器212b與至少一個相鄰圖案化反射器212b的相交處。矩形特徵結構240局部地增強光的引出並增加背光200b的亮度。In this embodiment, each patterned reflector 212b is similar to each patterned reflector 212a, except that the patterned reflector 212b includes a rectangular feature structure 240 instead of a corner feature structure 215. Each rectangular feature structure 240 is adjacent to (e.g., directly adjacent to) the intersection of the patterned reflector 212b with the adjacent patterned reflector 212b. Each patterned reflector 212b may include two rectangular feature structures 240 located on opposite sides of the circular center pattern of each patterned reflector. As shown in 242 in FIG. 4C , the reflectivity of each patterned reflector 212 b changes from a first value at a first position to a second value at a second position (e.g., 243) that is less than the first value, and changes from the second value at the second position to a third value at a third position (e.g., 244) that is greater than the second value, the first position being located at the center (e.g., 230) of each patterned reflector 212 b, the second position being a first distance from the first position, and the third position being a second distance from the first position, the second distance being greater than the first distance. In some exemplary embodiments, the third value is equal to the first value. In other embodiments, the third value is less than the first value. The third position of each patterned reflector 212 b is adjacent to the intersection of the patterned reflector 212 b and at least one adjacent patterned reflector 212 b. The rectangular features 240 locally enhance light extraction and increase the brightness of the backlight 200b.

圖4D是示例性背光200c的俯視圖。背光200c類似於先前參考圖4A和圖4B描述和示出的背光200a,不同之處在於背光200c包括圖案化漫射器208c代替圖案化漫射器208a。圖案化漫射器208c包括載體110(例如,導光板)和複數個圖案化反射器212c。複數個圖案化反射器212c佈置在載體110的上表面。在其他實施例中,複數個圖案化反射器212c可以佈置在載體110的下表面。每個圖案化反射器212c位於對應光源106上方。在該實施例中,每個圖案化反射器212c的中心與對應光源106(例如,對應光源的中心)對準。FIG. 4D is a top view of an exemplary backlight 200c. Backlight 200c is similar to the backlight 200a previously described and shown with reference to FIG. 4A and FIG. 4B, except that backlight 200c includes a patterned diffuser 208c instead of patterned diffuser 208a. Patterned diffuser 208c includes a carrier 110 (e.g., a light guide plate) and a plurality of patterned reflectors 212c. A plurality of patterned reflectors 212c are arranged on the upper surface of carrier 110. In other embodiments, a plurality of patterned reflectors 212c may be arranged on the lower surface of carrier 110. Each patterned reflector 212c is located above a corresponding light source 106. In this embodiment, the center of each patterned reflector 212c is aligned with a corresponding light source 106 (e.g., the center of the corresponding light source).

在該實施例中,每個圖案化反射器212c類似於每個圖案化反射器212a,不同之處在於圖案化反射器212c除了拐角特徵結構215之外還包括矩形特徵結構240和250。每個矩形特徵結構240和250鄰近(例如,直接相鄰)圖案化反射器212c與相鄰圖案化反射器212c的相交處。每個圖案化反射器212c可以包括位於每個圖案化反射器的圓形中心圖案的第一相對側的兩個矩形特徵結構240和位於每個圖案化反射器的圓形中心圖案的第二相對側的兩個矩形特徵結構250。在某些示例性實施例中,矩形特徵結構240、矩形特徵結構250及/或拐角特徵結構215可以具有相同的透射率。在其他實施例中,矩形特徵結構240、矩形特徵結構250及/或拐角特徵結構215可以具有不同的透射率。如圖4D中的242所示,每個圖案化反射器212c的反射率從第一位置處的第一值變化為小於第一值的第二位置(例如,243)處的第二值,並且從第二位置處的第二值變化為大於第二值的第三位置(例如,244)處的第三值,該第一位置位於每個圖案化反射器212c的中心(例如,230),該第二位置距第一位置第一距離,該第三位置距第一位置第二距離,第二距離大於第一距離。在某些示例性實施例中,第三值等於第一值。在其他實施例中,第三值小於第一值。每個圖案化反射器212c的第三位置鄰近圖案化反射器212c與至少一個相鄰圖案化反射器212c的相交處。In this embodiment, each patterned reflector 212c is similar to each patterned reflector 212a, except that patterned reflector 212c includes rectangular feature structures 240 and 250 in addition to corner feature structure 215. Each rectangular feature structure 240 and 250 is adjacent to (e.g., directly adjacent to) the intersection of patterned reflector 212c with adjacent patterned reflector 212c. Each patterned reflector 212c may include two rectangular feature structures 240 located on first opposite sides of the circular center pattern of each patterned reflector and two rectangular feature structures 250 located on second opposite sides of the circular center pattern of each patterned reflector. In some exemplary embodiments, the rectangular feature structures 240, the rectangular feature structures 250, and/or the corner feature structures 215 may have the same transmittance. In other embodiments, the rectangular feature structures 240, the rectangular feature structures 250, and/or the corner feature structures 215 may have different transmittances. As shown by 242 in FIG. 4D, the reflectivity of each patterned reflector 212c changes from a first value at a first position to a second value at a second position (e.g., 243) that is less than the first value, and changes from the second value at the second position to a third value at a third position (e.g., 244) that is greater than the second value, the first position being located at the center (e.g., 230) of each patterned reflector 212c, the second position being a first distance from the first position, and the third position being a second distance from the first position, the second distance being greater than the first distance. In some exemplary embodiments, the third value is equal to the first value. In other embodiments, the third value is less than the first value. The third position of each patterned reflector 212c is adjacent to an intersection of the patterned reflector 212c and at least one adjacent patterned reflector 212c.

如252所示,每個圖案化反射器的反射率進一步從第一位置(例如,230)處的第一值變化為第四位置(例如,253)處的第二值,並且從第四位置處的第二值變化為第五位置(例如,254)處的第四值,該第四位置距第一位置第一距離,該第五位置距第一位置第三距離,第三距離大於第二距離,第四值大於第二值且小於第三值。每個圖案化反射器212c的第三位置包括第一矩形特徵結構240,第一矩形特徵結構240包括鄰近圖案化反射器212c與相鄰圖案化反射器212c的相交處的第一矩形區域,並且每個圖案化反射器212c的第五位置包括第二矩形特徵結構250,第二矩形特徵結構250包括垂直於第一矩形區域並且鄰近圖案化反射器212c與另一相鄰圖案化反射器212c的相交處的第二矩形區域。矩形特徵結構240和250以及拐角特徵結構215局部地增強光的引出並增加背光200c的亮度。As shown in 252, the reflectivity of each patterned reflector further changes from a first value at a first position (e.g., 230) to a second value at a fourth position (e.g., 253), and from the second value at the fourth position to a fourth value at a fifth position (e.g., 254), wherein the fourth position is a first distance from the first position, the fifth position is a third distance from the first position, the third distance is greater than the second distance, and the fourth value is greater than the second value and less than the third value. The third position of each patterned reflector 212c includes a first rectangular feature structure 240, which includes a first rectangular area adjacent to the intersection of the patterned reflector 212c and the adjacent patterned reflector 212c, and the fifth position of each patterned reflector 212c includes a second rectangular feature structure 250, which includes a second rectangular area perpendicular to the first rectangular area and adjacent to the intersection of the patterned reflector 212c and another adjacent patterned reflector 212c. The rectangular feature structures 240 and 250 and the corner feature structure 215 locally enhance the extraction of light and increase the brightness of the backlight 200c.

圖5是示出圖案化漫射器的圖案化反射器(例如圖4A至圖4D的圖案化反射器212a、212b或212c)的厚度/區域覆蓋率相對於徑向位置的示例性關係的圖表300。在一個實施例中,如曲線302所示,隨著距圖案化反射器的中心的距離增加,厚度/區域覆蓋率基本上保持最大值,然後厚度/區域覆蓋率減小到最小值,基本上保持最小值,然後增大回最大值,並且基本上保持最大值。在另一個實施例中,如曲線304所示,隨著距圖案化反射器的中心的距離增加,厚度/區域覆蓋率基本上保持最大值,然後厚度/區域覆蓋率減小到最小值,基本上保持最小值,然後增大回最小值和最大值之間的值,並且基本上保持在最小值和最大值之間的值。5 is a graph 300 showing an exemplary relationship of thickness/area coverage versus radial position for a patterned reflector (e.g., patterned reflector 212a, 212b, or 212c of FIGS. 4A to 4D) of a patterned diffuser. In one embodiment, as shown by curve 302, as the distance from the center of the patterned reflector increases, the thickness/area coverage substantially maintains a maximum value, then the thickness/area coverage decreases to a minimum value, substantially maintains the minimum value, then increases back to a maximum value, and substantially maintains the maximum value. In another embodiment, as shown by curve 304, as the distance from the center of the patterned reflector increases, the thickness/area coverage ratio substantially maintains a maximum value, then the thickness/area coverage ratio decreases to a minimum value, substantially maintains the minimum value, then increases back to a value between the minimum value and the maximum value, and substantially maintains a value between the minimum value and the maximum value.

對於圖4B的圖案化反射器212a,圖表300的徑向位置可以對應於從圖案化反射器212a的中心到圖案化反射器212a的拐角(226)。對於圖4C的圖案化反射器212b,圖表300的徑向位置可以對應於從圖案化反射器212b的中心到圖案化反射器212b的一側(242)。對於圖4D的圖案化反射器212c,圖表300的徑向位置可以對應於從圖案化反射器212c的中心到圖案化反射器212c的第一側(242),可以對應於從圖案化反射器212c的中心到圖案化反射器212c的垂直於第一側的第二側(252),及/或可以對應於從圖案化反射器212c的中心到圖案化反射器212c的拐角(226)。For the patterned reflector 212a of Figure 4B, the radial position of the graph 300 may correspond to from the center of the patterned reflector 212a to the corner (226) of the patterned reflector 212a. For the patterned reflector 212b of Figure 4C, the radial position of the graph 300 may correspond to from the center of the patterned reflector 212b to a side (242) of the patterned reflector 212b. For the patterned reflector 212c of Figure 4D, the radial position of the graph 300 may correspond to from the center of the patterned reflector 212c to a first side (242) of the patterned reflector 212c, may correspond to from the center of the patterned reflector 212c to a second side (252) of the patterned reflector 212c that is perpendicular to the first side, and/or may correspond to from the center of the patterned reflector 212c to a corner (226) of the patterned reflector 212c.

圖6A和6B分別是示例性背光600的簡化截面圖和俯視圖。雖然未在圖6A和6B中示出,但背光600還可包括如先前參考至少圖1A-1C和3A-3E所述的圖案化漫射器108a、108b、108c、108e、108f或108g。另外,背光600可以代替背光100a用於圖2的LCD 150中。背光600可以包括基板102、反射層104、複數個光源106、複數個元件607和背板602。複數個光源106鄰近基板102(例如,佈置在基板102上)並且與基板102電學連通。複數個元件607鄰近基板102(例如,佈置在基板102上及/或穿過基板102)並且可以與基板102電學連通。在某些示例性實施例中,每個元件607是穿過基板102延伸的電觸點(例如,銅、銀)以將基板102的第一側上的複數個光源106電耦合到與第一側相對的基板102的第二側上的背板602。例如,每個元件607可以將一個調光區140電耦合到背板602。背板602可以包括用於單獨控制每個調光區140(例如,開、關和亮度控制)的電路。在其他實施例中,每個元件607可以是控制對應的調光區140中的光源106的控制晶片。6A and 6B are simplified cross-sectional and top views of an exemplary backlight 600, respectively. Although not shown in FIGS. 6A and 6B, the backlight 600 may also include a patterned diffuser 108a, 108b, 108c, 108e, 108f, or 108g as previously described with reference to at least FIGS. 1A-1C and 3A-3E. In addition, the backlight 600 may be used in the LCD 150 of FIG. 2 instead of the backlight 100a. The backlight 600 may include a substrate 102, a reflective layer 104, a plurality of light sources 106, a plurality of elements 607, and a backplane 602. The plurality of light sources 106 are adjacent to the substrate 102 (e.g., disposed on the substrate 102) and are electrically connected to the substrate 102. A plurality of elements 607 are adjacent to the substrate 102 (e.g., arranged on and/or through the substrate 102) and can be electrically connected to the substrate 102. In some exemplary embodiments, each element 607 is an electrical contact (e.g., copper, silver) extending through the substrate 102 to electrically couple a plurality of light sources 106 on a first side of the substrate 102 to a backplane 602 on a second side of the substrate 102 opposite to the first side. For example, each element 607 can electrically couple one dimming zone 140 to the backplane 602. The backplane 602 can include circuitry for individually controlling each dimming zone 140 (e.g., on, off, and brightness control). In other embodiments, each element 607 can be a control chip that controls the light source 106 in the corresponding dimming zone 140.

反射層104位於基板102上並且圍繞每個光源106和每個元件607。在某些示例性實施例中,基板102是反光的,因此可以不包括反射層104。反射層104具有第一反射率,並且每個元件607具有不同於第一反射率的第二反射率。在某些示例性實施例中,第二反射率小於第一反射率。The reflective layer 104 is located on the substrate 102 and surrounds each light source 106 and each element 607. In some exemplary embodiments, the substrate 102 is reflective and thus may not include the reflective layer 104. The reflective layer 104 has a first reflectivity, and each element 607 has a second reflectivity different from the first reflectivity. In some exemplary embodiments, the second reflectivity is less than the first reflectivity.

參考圖6B的俯視圖,光源106佈置在包括複數行和複數列的2D陣列中。雖然圖6B中以六行和六列圖示36個光源106,但是在其他實施例中,背光600可包括以任意合適數量的行和任意合適數量的列佈置的任意合適數量的光源106。光源106也可以佈置成其他週期性圖案,例如六邊形或三角形晶格,或者佈置成準週期性或非嚴格週期性圖案。例如,在背光600的邊緣及/或拐角處,光源106之間的間隔可以較小。Referring to the top view of FIG. 6B , the light sources 106 are arranged in a 2D array including a plurality of rows and a plurality of columns. Although FIG. 6B illustrates 36 light sources 106 in six rows and six columns, in other embodiments, the backlight 600 may include any suitable number of light sources 106 arranged in any suitable number of rows and any suitable number of columns. The light sources 106 may also be arranged in other periodic patterns, such as hexagonal or triangular lattices, or in quasi-periodic or non-strict periodic patterns. For example, the spacing between the light sources 106 may be smaller at the edges and/or corners of the backlight 600.

在該實施例中,每個調光區140包括以2×2佈置的四個光源106用於每個元件607。一行中的光源106具有如142所示的第一間距 Px(例如,中心到中心),並且一列中的光源106具有如144所示的第二間距 Py(例如,中心到中心)。在某些示例性實施例中,第一間距 Px142可以不同於第二間距 Py144。在其他實施例中,第一間距 Px142可以等於第二間距 Py144。在圖6B所示的實施例中,第一間距 Px142小於第二間距 Py144。 In this embodiment, each dimming zone 140 includes four light sources 106 arranged in a 2×2 arrangement for each element 607. The light sources 106 in a row have a first spacing Px (e.g., center to center) as shown at 142, and the light sources 106 in a column have a second spacing Py (e.g., center to center) as shown at 144. In some exemplary embodiments, the first spacing Px 142 may be different from the second spacing Py 144. In other embodiments, the first spacing Px 142 may be equal to the second spacing Py 144. In the embodiment shown in FIG. 6B, the first spacing Px 142 is less than the second spacing Py 144.

在每個調光區140內,元件607可以鄰近對應的第一最近光源106 1、第二最近光源106 2、第三最近光源106 3和第四最近光源106 4。第一、第二、第三和第四最近光源到元件607的距離可以相等。在某些示例性實施例中,如612所示,每個元件607的中心與對應的第一最近光源106 1(例如,第一最近光源106 1的中心)之間的距離 d1大於或等於第一間距 Px142或大於或等於第二間距 Py144。對應的第一最近光源106 1、第二最近光源106 2、第三最近光源106 3和第四最近光源106 4中的每一者的對應中心作為頂點形成對應的四邊形610。在某些示例性實施例中,每個元件607的中心與對應的第一最近光源106 1(例如,第一最近光源106 1的中心)之間的距離 d1612至少是對應四邊形610的中心與對應的第一最近光源106 1之間的距離的約80%。在其他實施例中,每個元件607的中心與對應的第一最近光源106 1(例如,第一最近光源106 1的中心)之間的距離 d1612至少是對應四邊形610的中心與對應的第一最近光源106 1之間的距離的約98%。 In each dimming zone 140, the element 607 may be adjacent to the corresponding first nearest light source 106 1 , the second nearest light source 106 2 , the third nearest light source 106 3 and the fourth nearest light source 106 4 . The distances from the first, second, third and fourth nearest light sources to the element 607 may be equal. In certain exemplary embodiments, as shown in 612, the distance d1 between the center of each element 607 and the corresponding first nearest light source 106 1 (e.g., the center of the first nearest light source 106 1 ) is greater than or equal to the first spacing Px 142 or greater than or equal to the second spacing Py 144. The corresponding center of each of the corresponding first nearest light source 106 1 , the second nearest light source 106 2 , the third nearest light source 106 3 and the fourth nearest light source 106 4 is used as a vertex to form a corresponding quadrilateral 610. In some exemplary embodiments, the distance d1 612 between the center of each element 607 and the corresponding first closest light source 106 1 (e.g., the center of the first closest light source 106 1 ) is at least about 80% of the distance between the center of the corresponding quadrilateral 610 and the corresponding first closest light source 106 1. In other embodiments, the distance d1 612 between the center of each element 607 and the corresponding first closest light source 106 1 (e.g., the center of the first closest light source 106 1 ) is at least about 98% of the distance between the center of the corresponding quadrilateral 610 and the corresponding first closest light source 106 1 .

在其他實施例中,元件607的中心與最近光源106 1之間的距離 d1612由下式提供: 在其他實施例中,元件607的中心與最近光源106 1之間的距離 d1612由下式提供: 在其他實施例中,元件607的中心與最近光源106 1之間的距離 d1612由下式提供: 在其他實施例中,元件607的中心與最近光源106 1之間的距離 d1612由下式提供: In other embodiments, the distance d1 612 between the center of the element 607 and the nearest light source 1061 is provided by: In other embodiments, the distance d1 612 between the center of the element 607 and the nearest light source 1061 is provided by: In other embodiments, the distance d1 612 between the center of the element 607 and the nearest light source 1061 is provided by: In other embodiments, the distance d1 612 between the center of the element 607 and the nearest light source 1061 is provided by:

包括複數個圖案化反射器和複數個補償特徵結構的圖案化漫射器可位於每個調光區140內的複數個光源106和元件607上方。每個圖案化反射器可位於對應光源106上方並且可具有變化的透射率。每個補償特徵結構可位於對應元件607上方。每個元件607可以在每個元件所在的區域周圍局部地降低亮度,這可能導致影響亮度均勻性的不均勻現象(mura)。然而,元件607被佈置得離最近光源越遠,元件607吸收的光越少。藉由將每個元件607佈置成更遠離每個調光區140內的光源106 1、106 2、106 3和106 4(例如,在距最近光源的最大可能距離處),背光600可具有更高的亮度並改善與圖案化漫射器的對準容差。 A patterned diffuser including a plurality of patterned reflectors and a plurality of compensating features may be located above a plurality of light sources 106 and elements 607 within each dimming zone 140. Each patterned reflector may be located above a corresponding light source 106 and may have a varying transmittance. Each compensating feature may be located above a corresponding element 607. Each element 607 may locally reduce brightness around the area where each element is located, which may result in mura that affects brightness uniformity. However, the farther the element 607 is positioned from the nearest light source, the less light the element 607 absorbs. By placing each element 607 farther from the light sources 106 1 , 106 2 , 106 3 , and 106 4 within each dimming zone 140 (eg, at the maximum possible distance from the nearest light source), the backlight 600 can have higher brightness and improved alignment tolerance with the patterned diffuser.

圖7A是背光(例如圖6A和圖6B的背光600)的示例性調光區140a的俯視圖。背光600可包括以行和列佈置的複數個調光區140a。調光區140a包括元件607和四個光源106,該等四個光源106包括以兩行和兩列佈置的第一最近光源106 1、第二最近光源106 2、第三最近光源106 3和第四最近光源106 4。一行中的光源106(例如,106 3和106 4)具有如142a所示的第一間距 Px(例如,中心到中心),並且一列中的光源106(例如,106 1和106 3)具有如144a所示的第二間距 Py(例如,中心到中心)。在某些示例性實施例中,第一間距 Px142a可以不同於第二間距 Py144a。在其他實施例中,第一間距 Px142a可以等於第二間距 Py144a。在圖7A所示的實施例中,第一間距 Px142a小於第二間距 Py144a。 FIG. 7A is a top view of an exemplary dimming zone 140a of a backlight (e.g., backlight 600 of FIG. 6A and FIG. 6B ). Backlight 600 may include a plurality of dimming zones 140a arranged in rows and columns. Dimming zone 140a includes element 607 and four light sources 106, including a first nearest light source 106 1 , a second nearest light source 106 2 , a third nearest light source 106 3 , and a fourth nearest light source 106 4 arranged in two rows and two columns. Light sources 106 in a row (e.g., 106 3 and 106 4 ) have a first spacing Px (e.g., center to center) as shown in 142a, and light sources 106 in a column (e.g., 106 1 and 106 3 ) have a second spacing Py (e.g., center to center) as shown in 144a. In some exemplary embodiments, the first pitch Px 142a may be different from the second pitch Py 144a. In other embodiments, the first pitch Px 142a may be equal to the second pitch Py 144a. In the embodiment shown in FIG. 7A, the first pitch Px 142a is smaller than the second pitch Py 144a.

第一最近光源106 1、第二最近光源106 2、第三最近光源106 3和第四最近光源106 4中的每一者的中心706 1、706 2、706 3和706 4分別作為頂點形成四邊形610a。在該實施例中,調光區140a內的元件607的中心707被佈置在四邊形610a的中心710a處,使得元件607的中心707與第一最近光源106 1(例如,第一最近光源106 1的中心706 1)之間的距離612a是四邊形610a的中心710a與第一最近光源106 1之間的距離的約100%。因此,元件607被佈置在距最近光源最大可能距離處。在該實施例中,每個調光區140a內的複數個光源106 1、106 2、106 3和106 4相對於矩形網格對準,使得四邊形610a是矩形。 The centers 706 1 , 706 2 , 706 3 and 706 4 of each of the first closest light source 106 1 , the second closest light source 106 2 , the third closest light source 106 3 and the fourth closest light source 106 4 are respectively used as vertices to form a quadrilateral 610 a. In this embodiment, the center 707 of the element 607 within the dimming zone 140 a is arranged at the center 710 a of the quadrilateral 610 a, so that the distance 612 a between the center 707 of the element 607 and the first closest light source 106 1 (e.g., the center 706 1 of the first closest light source 106 1 ) is about 100% of the distance between the center 710 a of the quadrilateral 610 a and the first closest light source 106 1. Therefore, the element 607 is arranged at the maximum possible distance from the closest light source. In this embodiment, the plurality of light sources 106 1 , 106 2 , 106 3 , and 106 4 within each dimming zone 140 a are aligned with respect to a rectangular grid such that the quadrilateral 610 a is a rectangle.

圖7B是背光(例如圖6A和6B的背光600)的示例性調光區140b的俯視圖。背光600可包括以行和列佈置的複數個調光區140b。調光區140b包括元件607和四個光源106,該等四個光源106包括以兩行和兩列佈置的第一光源106 1、第二光源106 2、第三光源106 3和第四光源106 4。一行中的光源106(例如,106 3和106 4)具有如142b所示的第一間距 Px(例如,中心到中心),並且一列中的光源106(例如,106 1和106 3)具有如144b所示的第二間距 Py(例如,中心到中心)。在某些示例性實施例中,第一間距 Px142b可以不同於第二間距 Py144b。在其他實施例中,第一間距 Px142b可以等於第二間距 Py144b。在圖7B所示的實施例中,第一間距 Px142b小於第二間距 Py144b。 FIG. 7B is a top view of an exemplary dimming zone 140 b of a backlight (e.g., backlight 600 of FIGS. 6A and 6B ). Backlight 600 may include a plurality of dimming zones 140 b arranged in rows and columns. Dimming zone 140 b includes element 607 and four light sources 106, including a first light source 106 1 , a second light source 106 2 , a third light source 106 3 , and a fourth light source 106 4 arranged in two rows and two columns. The light sources 106 in a row (e.g., 106 3 and 106 4 ) have a first spacing Px (e.g., center to center) as shown in 142 b, and the light sources 106 in a column (e.g., 106 1 and 106 3 ) have a second spacing Py (e.g., center to center) as shown in 144 b. In some exemplary embodiments, the first pitch Px 142b may be different from the second pitch Py 144b. In other embodiments, the first pitch Px 142b may be equal to the second pitch Py 144b. In the embodiment shown in FIG. 7B, the first pitch Px 142b is smaller than the second pitch Py 144b.

第一光源106 1、第二光源106 2、第三光源106 3和第四光源106 4中的每一者的中心706 1、706 2、706 3和706 4分別作為頂點形成四邊形610b。在該實施例中,調光區140b內的元件607的中心707被佈置在調光區140b的拐角處,使得元件607的中心707與第一最近光源106 1(例如,第一最近光源106 1的中心706 1)之間的距離612b是元件607的中心707與最近光源(在該實施例中為光源106 1)之間的最大可能距離。例如,距離612b可以大於四邊形610b的中心710b與第一光源106 1的中心706 1之間的距離。在該實施例中,每個調光區140b內的複數個光源106 1、106 2、106 3和106 4相對於矩形網格對準,使得四邊形610b是矩形。 The centers 706 1 , 706 2 , 706 3 and 706 4 of each of the first light source 106 1 , the second light source 106 2 , the third light source 106 3 and the fourth light source 106 4 are respectively used as vertices to form a quadrilateral 610 b. In this embodiment, the center 707 of the element 607 within the dimming zone 140 b is arranged at a corner of the dimming zone 140 b, so that the distance 612 b between the center 707 of the element 607 and the first nearest light source 106 1 (e.g., the center 706 1 of the first nearest light source 106 1 ) is the maximum possible distance between the center 707 of the element 607 and the nearest light source (the light source 106 1 in this embodiment). For example, the distance 612b may be greater than the distance between the center 710b of the quadrilateral 610b and the center 7061 of the first light source 1061. In this embodiment, the plurality of light sources 1061 , 1062 , 1063 and 1064 within each dimming zone 140b are aligned relative to a rectangular grid such that the quadrilateral 610b is rectangular.

圖7C是背光(例如圖6A和圖6B的背光600)的示例性調光區140c的俯視圖。背光600可包括以行和列佈置的複數個調光區140c。調光區140c包括元件607和四個光源106,該等四個光源106包括以2×2陣列佈置的第一最近光源106 1、第二最近光源106 2、第三最近光源106 3和第四最近光源106 4。一行中的光源106(例如,106 3和106 4)具有如142c所示的第一間距 Px(例如,中心到中心),並且一列中的光源106(例如,106 1和106 3)具有如144c所示的第二間距 Py(例如,中心到中心)。在某些示例性實施例中,第一間距 Px142c可以不同於第二間距 Py144c。在其他實施例中,第一間距 Px142c可以等於第二間距 Py144c。在圖7C所示的實施例中,第一間距 Px142c小於第二間距 Py144c。 FIG. 7C is a top view of an exemplary dimming zone 140 c of a backlight (e.g., backlight 600 of FIGS. 6A and 6B ). Backlight 600 may include a plurality of dimming zones 140 c arranged in rows and columns. Dimming zone 140 c includes element 607 and four light sources 106, including a first nearest light source 106 1 , a second nearest light source 106 2 , a third nearest light source 106 3 , and a fourth nearest light source 106 4 arranged in a 2×2 array. Light sources 106 in a row (e.g., 106 3 and 106 4 ) have a first spacing Px (e.g., center to center) as shown in 142 c, and light sources 106 in a column (e.g., 106 1 and 106 3 ) have a second spacing Py (e.g., center to center) as shown in 144 c. In some exemplary embodiments, the first pitch Px 142c may be different from the second pitch Py 144c. In other embodiments, the first pitch Px 142c may be equal to the second pitch Py 144c. In the embodiment shown in FIG. 7C, the first pitch Px 142c is smaller than the second pitch Py 144c.

第一最近光源106 1、第二最近光源106 2、第三最近光源106 3和第四最近光源106 4中的每一者的中心706 1、706 2、706 3和706 4分別作為頂點形成四邊形610c。在該實施例中,調光區140c內的元件607的中心707被佈置在四邊形610c的中心710c處,使得元件607的中心707與第一最近光源106 1(例如,第一最近光源106 1的中心706 1)之間的距離612c是四邊形610c的中心710c與第一最近光源106 1之間的距離的約100%。因此,元件607被佈置在距最近光源最大可能距離處。在該實施例中,每個調光區140c內的複數個光源106 1、106 2、106 3和106 4相對於矩形網格偏移,使得四邊形610c不是矩形。 The centers 706 1 , 706 2 , 706 3 and 706 4 of each of the first closest light source 106 1 , the second closest light source 106 2 , the third closest light source 106 3 and the fourth closest light source 106 4 are respectively used as vertices to form a quadrilateral 610 c. In this embodiment, the center 707 of the element 607 within the dimming zone 140 c is arranged at the center 710 c of the quadrilateral 610 c, so that the distance 612 c between the center 707 of the element 607 and the first closest light source 106 1 (e.g., the center 706 1 of the first closest light source 106 1 ) is about 100% of the distance between the center 710 c of the quadrilateral 610 c and the first closest light source 106 1. Therefore, the element 607 is arranged at the maximum possible distance from the closest light source. In this embodiment, the plurality of light sources 106 1 , 106 2 , 106 3 , and 106 4 within each dimming zone 140 c are offset relative to the rectangular grid such that the quadrilateral 610 c is not a rectangle.

圖7D是背光(例如圖6A和圖6B的背光600)的示例性調光區140d的俯視圖。背光600可包括以行和列佈置的複數個調光區140d。調光區140d包括元件607和六個光源106,該等六個光源包括以兩行和三列佈置的第一最近光源106 1、第二最近光源106 2、第三最近光源106 3、第四最近光源106 4、第五光源106 5和第六光源106 6。一行中的光源106(例如,106 3和106 4)具有如142d所示的第一間距 Px(例如,中心到中心),並且一列中的光源106(例如,106 1和106 3)具有如144d所示的第二間距 Py(例如,中心到中心)。在某些示例性實施例中,第一間距 Px142d可以不同於第二間距 Py144d。在其他實施例中,第一間距 Px142d可以等於第二間距 Py144d。在圖7D所示的實施例中,第一間距 Px142d小於第二間距 Py144d。 FIG. 7D is a top view of an exemplary dimming zone 140d of a backlight (e.g., backlight 600 of FIGS. 6A and 6B ). Backlight 600 may include a plurality of dimming zones 140d arranged in rows and columns. Dimming zone 140d includes element 607 and six light sources 106, including a first nearest light source 106 1 , a second nearest light source 106 2 , a third nearest light source 106 3 , a fourth nearest light source 106 4 , a fifth light source 106 5 , and a sixth light source 106 6 arranged in two rows and three columns. The light sources 106 in a row (e.g., 106 3 and 106 4 ) have a first spacing Px (e.g., center to center) as shown in 142d, and the light sources 106 in a column (e.g., 106 1 and 106 3 ) have a second spacing Py (e.g., center to center) as shown in 144d. In some exemplary embodiments, the first pitch Px 142d may be different from the second pitch Py 144d. In other embodiments, the first pitch Px 142d may be equal to the second pitch Py 144d. In the embodiment shown in FIG. 7D, the first pitch Px 142d is smaller than the second pitch Py 144d.

最鄰近元件607的第一最近光源106 1、第二最近光源106 2、第三最近光源106 3和第四最近光源106 4中的每一者的中心706 1、706 2、706 3和706 4分別作為頂點形成四邊形610d。在該實施例中,調光區140d內的元件607的中心707被佈置在四邊形610d的中心710d處,使得元件607的中心707與第一最近光源106 1(例如,第一最近光源106 1的中心706 1)之間的距離612d是四邊形610d的中心710d與第一最近光源106 1之間的距離的約100%。因此,元件607被佈置在距最近光源最大可能距離處。在該實施例中,每個調光區140d內的複數個光源106 1、106 2、106 3、106 4、106 5和106 6相對於矩形網格對準,使得四邊形610d是矩形。 The centers 706 1 , 706 2 , 706 3 and 706 4 of each of the first closest light source 106 1 , the second closest light source 106 2 , the third closest light source 106 3 and the fourth closest light source 106 4 of the nearest element 607 are respectively used as vertices to form a quadrilateral 610 d. In this embodiment, the center 707 of the element 607 within the dimming zone 140 d is arranged at the center 710 d of the quadrilateral 610 d, so that the distance 612 d between the center 707 of the element 607 and the first closest light source 106 1 (e.g., the center 706 1 of the first closest light source 106 1 ) is about 100% of the distance between the center 710 d of the quadrilateral 610 d and the first closest light source 106 1. Therefore, the element 607 is arranged at the maximum possible distance from the nearest light source. In this embodiment, the plurality of light sources 106 1 , 106 2 , 106 3 , 106 4 , 106 5 , and 106 6 within each dimming zone 140 d are aligned with respect to a rectangular grid such that the quadrilateral 610 d is a rectangle.

圖7E是背光(例如圖6A和圖6B的背光600)的示例性調光區140e的俯視圖。背光600可包括以行和列佈置的複數個調光區140e。調光區140e包括元件607和九個光源106,該等九個光源包括以三行和三列佈置的第一最近光源106 1、第二最近光源106 2、第三最近光源106 3、第四最近光源106 4、第五光源106 5、第六光源106 6、第七光源106 7、第八光源106 8和第九光源106 9。一行中的光源106(例如,106 3和106 4)具有如142e所示的第一間距 Px(例如,中心到中心),並且一列中的光源106(例如,106 1和106 3)具有如144e所示的第二間距 Py(例如,中心到中心)。在某些示例性實施例中,第一間距 Px142e可以不同於第二間距 Py144e。在其他實施例中,第一間距 Px142e可以等於第二間距 Py144e。在圖7E所示的實施例中,第一間距 Px142e小於第二間距 Py144e。 FIG7E is a top view of an exemplary dimming zone 140e of a backlight (e.g., backlight 600 of FIG6A and FIG6B). Backlight 600 may include a plurality of dimming zones 140e arranged in rows and columns. Dimming zone 140e includes element 607 and nine light sources 106, which include a first nearest light source 1061 , a second nearest light source 1062 , a third nearest light source 1063 , a fourth nearest light source 1064, a fifth light source 1065 , a sixth light source 1066 , a seventh light source 1067 , an eighth light source 1068 , and a ninth light source 1069 arranged in three rows and three columns . The light sources 106 in a row (e.g., 106 3 and 106 4 ) have a first spacing Px (e.g., center to center) as shown in 142e, and the light sources 106 in a column (e.g., 106 1 and 106 3 ) have a second spacing Py (e.g., center to center) as shown in 144e. In some exemplary embodiments, the first spacing Px 142e may be different from the second spacing Py 144e. In other embodiments, the first spacing Px 142e may be equal to the second spacing Py 144e. In the embodiment shown in FIG. 7E , the first spacing Px 142e is less than the second spacing Py 144e.

最鄰近元件607的第一最近光源106 1、第二最近光源106 2、第三最近光源106 3和第四最近光源106 4中的每一者的中心706 1、706 2、706 3和706 4分別作為頂點形成四邊形610e。在該實施例中,調光區140e內的元件607的中心707被佈置在四邊形610e的中心710e處,使得元件607的中心707與第一最近光源106 1(例如,第一最近光源106 1的中心706 1)之間的距離612e是四邊形610e的中心710e與第一最近光源106 1之間的距離的約100%。因此,元件607被佈置在距最近光源最大可能距離處。在該實施例中,每個調光區140e內的複數個光源106 1、106 2、106 3、106 4、106 5、106 6、106 7、106 8和106 9相對於矩形網格對準,使得四邊形610e是矩形。 The centers 706 1 , 706 2 , 706 3 and 706 4 of each of the first closest light source 106 1 , the second closest light source 106 2 , the third closest light source 106 3 and the fourth closest light source 106 4 of the nearest element 607 are respectively used as vertices to form a quadrilateral 610e. In this embodiment, the center 707 of the element 607 within the dimming zone 140e is arranged at the center 710e of the quadrilateral 610e, so that the distance 612e between the center 707 of the element 607 and the first closest light source 106 1 (e.g., the center 706 1 of the first closest light source 106 1 ) is about 100% of the distance between the center 710e of the quadrilateral 610e and the first closest light source 106 1. Therefore, the element 607 is arranged at the maximum possible distance from the nearest light source. In this embodiment, the plurality of light sources 106 1 , 106 2 , 106 3 , 106 4 , 106 5 , 106 6 , 106 7 , 106 8 , and 106 9 within each dimming zone 140 e are aligned with respect to a rectangular grid such that the quadrilateral 610 e is a rectangle.

對於本領域技藝人士顯而易見的是,在不脫離本發明的精神和範圍的情況下,可以對本發明的實施例進行各種修改和變化。因此,本發明旨在覆蓋這些修改和變化,只要它們落入所附請求項及其均等物的範圍內。It is obvious to those skilled in the art that various modifications and variations can be made to the embodiments of the present invention without departing from the spirit and scope of the present invention. Therefore, the present invention is intended to cover these modifications and variations as long as they fall within the scope of the attached claims and their equivalents.

102:基板 104:反射層 106:光源 107:元件 110:載體 112:圖案化反射器 113:基本平坦部分 114:曲面部分 120:尺寸 122:尺寸 124:尺寸 126:間距 130:對準 132:對準 134:偏移 136:偏移 140:調光區 142:第一間距 144:第二間距 146:距離 150:液晶顯示器 152:漫射板 154:顏色轉換層 156:稜鏡膜 158:反射偏振器 160:顯示面板 170:第一光源的中心 172:對應元件的中心 174:距離 176:距離 213:基本平坦部分 214:曲面部分 215:拐角部分 220:尺寸 222:尺寸 223:尺寸 240:矩形特徵結構 250:矩形特徵結構 300:圖表 302:曲線 304:曲線 600:背光 602:背板 607:元件 610:四邊形 612:距離 707:中心 100a:背光 100b:背光 100c:背光 100d:背光 100e:背光 100f:背光 100g:背光 106 1:第一最近光源 106 2:第二最近光源 106 3:第三最近光源 106 4:第四最近光源 106 5:第五光源 106 6:第六光源 106 7:第七光源 106 8:第八光源 106 9:第九光源 108a:圖案化漫射器 108b:圖案化漫射器 108c:圖案化漫射器 108e:圖案化漫射器 108f:圖案化漫射器 108g:圖案化漫射器 112a:圖案化反射器 112b:圖案化反射器 112c:圖案化反射器 112d:圖案化反射器 112e:圖案化反射器 112f:圖案化反射器 112g:圖案化反射器 118a:補償特徵結構 118b:補償特徵結構 118c:補償特徵結構 140:調光區 140a:調光區 140b:調光區 140c:調光區 140d:調光區 140e:調光區 142a:第一間距 Px142b:第一間距 Px142c:第一間距 Px142d:第一間距 Px142e:第一間距 Px144a:第二間距 Py144b:第二間距 Py144c:第二間距 Py144d:第二間距 Py200a:背光 200c:背光 208a:圖案化漫射器 208b:圖案化漫射器 208c:圖案化漫射器 212a:圖案化反射器 212b:圖案化反射器 212c:圖案化反射器 610a:四邊形 610b:四邊形 610c:四邊形 610d:四邊形 610e:四邊形 612a:距離 612b:距離 612d:距離 612e:距離 706 1-706 4:中心 710a:中心 710b:中心 710c:中心 710d:中心 710e:中心 102: substrate 104: reflective layer 106: light source 107: element 110: carrier 112: patterned reflector 113: substantially flat portion 114: curved portion 120: size 122: size 124: size 126: spacing 130: alignment 132: alignment 134: offset 136: offset 140: dimming zone 142: first spacing 144: second spacing 146: distance 150: liquid crystal display 152: diffuser 154: color conversion layer 156: prism film 158: reflective polarizer 160: display panel 170: center of the first light source Center 172: Center of corresponding element 174: Distance 176: Distance 213: Basic flat portion 214: Curved portion 215: Corner portion 220: Dimension 222: Dimension 223: Dimension 240: Rectangular feature structure 250: Rectangular feature structure 300: Graph 302: Curve 304: Curve 600: Backlight 602: Backplane 607: Element 610: Quad 612: Distance 707: Center 100a: Backlight 100b: Backlight 100c: Backlight 100d: Backlight 100e: Backlight 100f: Backlight 100g: Backlight 106 1 : first closest light source 106 2 : second closest light source 106 3 : third closest light source 106 4 : fourth closest light source 106 5 : fifth light source 106 6 : sixth light source 106 7 : seventh light source 106 8 : eighth light source 106 9 : : Ninth light source 108a: Patterned diffuser 108b: Patterned diffuser 108c: Patterned diffuser 108e: Patterned diffuser 108f: Patterned diffuser 108g: Patterned diffuser 112a: Patterned reflector 112b: Patterned reflector 112c: Patterned reflector 112d: Patterned reflector 112e: Patterned reflector 112f: Patterned reflector 112g: Patterned reflector 118a: Compensation feature structure 118b: Compensation feature structure 118c: Compensation feature structure 140: Dimming zone 140a: Dimming zone 140b: Dimming zone 140c: Dimming zone 140d: Dimming zone 140e: Dimming zone 142a: First spacing Px 142b: first distance Px 142c: first distance Px 142d: first distance Px 142e: first distance Px 144a: second distance Py 144b: second distance Py 144c: second distance Py 144d: second distance Py 200a: backlight 200c: backlight 208a: patterned diffuser 208b: patterned diffuser 208c: patterned diffuser 212a: patterned reflector 212b: patterned reflector 212c: patterned reflector 610a: quadrilateral 610b: quadrilateral 610c: quadrilateral 610d: quadrilateral 610e: quadrilateral 612a: distance 612b: distance 612d: distance 612e: distance 706 1 -706 4 : Center 710a : Center 710b : Center 710c : Center 710d : Center 710e : Center

圖1A-1F是包括圖案化漫射器的示例性背光的多個視圖;1A-1F are various views of an exemplary backlight including a patterned diffuser;

圖2是包括圖1A的示例性背光的示例性液晶顯示器(LCD)的簡化截面圖;FIG. 2 is a simplified cross-sectional view of an exemplary liquid crystal display (LCD) including the exemplary backlight of FIG. 1A ;

圖3A-3E是包括圖案化漫射器的其他示例性背光的多個視圖;3A-3E are various views of other exemplary backlights including patterned diffusers;

圖4A-4D是包括圖案化漫射器的又一示例性背光的多個視圖;4A-4D are various views of yet another exemplary backlight including a patterned diffuser;

圖5是圖示圖案化漫射器的圖案化反射器的厚度/區域覆蓋率相對於徑向位置的示例性關係的圖表;FIG5 is a graph illustrating an exemplary relationship of thickness/area coverage of a patterned reflector versus radial position for a patterned diffuser;

圖6A和6B分別是另一示例性背光的簡化截面圖和俯視圖;6A and 6B are simplified cross-sectional and top views, respectively, of another exemplary backlight;

圖7A-7E是背光的示例性調光區的俯視圖。7A-7E are top views of exemplary dimming zones of a backlight.

國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic storage information (please note in the order of storage institution, date, and number) None Foreign storage information (please note in the order of storage country, institution, date, and number) None

102:基板 102: Substrate

104:反射層 104: Reflective layer

106:光源 106: Light source

107:元件 107: Components

110:載體 110: Carrier

112:圖案化反射器 112: Patterned reflector

113:基本平坦部分 113: basically flat part

114:曲面部分 114: Surface part

120:尺寸 120: Size

122:尺寸 122:Size

124:尺寸 124:Size

126:間距 126: Spacing

130:對準 130: Alignment

132:對準 132: Alignment

100a:背光 100a: Backlight

108a:圖案化漫射器 108a: Patterned diffuser

112a:圖案化反射器 112a: Patterned reflector

118a:補償特徵結構 118a: Compensation feature structure

Claims (25)

一種背光,該背光包括: 一基板; 複數個光源,該等複數個光源鄰近該基板; 一反射層,該反射層位於該基板上,該反射層具有一第一反射率; 複數個元件,該等複數個元件鄰近該基板,每個元件具有不同於該第一反射率的一第二反射率;及 一圖案化漫射器,該圖案化漫射器包括位於該等複數個光源和該等複數個元件上方的複數個圖案化反射器和複數個補償特徵結構,每個圖案化反射器位於一對應光源上方並且具有一變化的透射率,並且每個補償特徵結構位於一對應元件上方。 A backlight, the backlight comprising: a substrate; a plurality of light sources, the plurality of light sources being adjacent to the substrate; a reflective layer, the reflective layer being located on the substrate, the reflective layer having a first reflectivity; a plurality of elements, the plurality of elements being adjacent to the substrate, each element having a second reflectivity different from the first reflectivity; and a patterned diffuser, the patterned diffuser comprising a plurality of patterned reflectors and a plurality of compensating feature structures located above the plurality of light sources and the plurality of elements, each patterned reflector being located above a corresponding light source and having a varying transmittance, and each compensating feature structure being located above a corresponding element. 如請求項1之背光,其中該第二反射率小於該第一反射率。A backlight as claimed in claim 1, wherein the second reflectivity is less than the first reflectivity. 如請求項1之背光,其中每個補償特徵結構包括穿過一圖案化反射器的一開口。The backlight of claim 1, wherein each compensating feature structure comprises an opening through a patterned reflector. 如請求項1之背光,其中每個補償特徵結構的一透射率與不對應於一元件的每個圖案化反射器的對應位置處的一透射率不同。A backlight as claimed in claim 1, wherein a transmittance of each compensation feature structure is different from a transmittance at a corresponding position of each patterned reflector that does not correspond to an element. 如請求項1之背光,其中每個補償特徵結構具有一恆定的透射率。A backlight as claimed in claim 1, wherein each compensation feature structure has a constant transmittance. 如請求項1之背光,其中每個補償特徵結構的一透射率從更靠近一圖案化反射器的一中心的一較低值變化為更遠離該圖案化反射器的該中心的一較高值。A backlight as in claim 1, wherein a transmittance of each compensating feature structure varies from a lower value closer to a center of a patterned reflector to a higher value farther from the center of the patterned reflector. 如請求項1之背光,其中每個圖案化反射器的一中心與一對應光源對準,並且每個補償特徵結構的一中心與一對應元件對準。A backlight as in claim 1, wherein a center of each patterned reflector is aligned with a corresponding light source, and a center of each compensation feature structure is aligned with a corresponding element. 如請求項1之背光,其中每個圖案化反射器的一中心相對於一對應光源偏移,並且每個補償特徵結構的一中心相對於一對應元件偏移。A backlight as in claim 1, wherein a center of each patterned reflector is offset relative to a corresponding light source, and a center of each compensation feature structure is offset relative to a corresponding element. 一種背光,包括: 一基板; 複數個光源,該等複數個光源鄰近該基板; 一反射層,該反射層位於該基板上,該反射層具有一第一反射率; 複數個元件,該等複數個元件鄰近該基板,每個元件具有不同於該第一反射率的一第二反射率;及 一圖案化漫射器,該圖案化漫射器包括位於該等複數個光源和該等複數個元件上方的複數個圖案化反射器, 其中該等複數個圖案化反射器包括位於與一對應元件相鄰佈置的對應光源上方的非對稱反射器和位於不與一對應元件相鄰佈置的對應光源上方的對稱反射器。 A backlight comprises: a substrate; a plurality of light sources, the plurality of light sources being adjacent to the substrate; a reflective layer, the reflective layer being located on the substrate and having a first reflectivity; a plurality of elements, the plurality of elements being adjacent to the substrate, each element having a second reflectivity different from the first reflectivity; and a patterned diffuser, the patterned diffuser comprising a plurality of patterned reflectors located above the plurality of light sources and the plurality of elements, wherein the plurality of patterned reflectors comprise an asymmetric reflector located above a corresponding light source arranged adjacent to a corresponding element and a symmetric reflector located above a corresponding light source not arranged adjacent to a corresponding element. 如請求項9之背光,其中該第二反射率小於該第一反射率。A backlight as in claim 9, wherein the second reflectivity is less than the first reflectivity. 如請求項9之背光,其中位於一對應第一光源上方的鄰近一對應元件的一第一側的一第一非對稱反射器具有一第一面積,並且位於一對應第二光源上方的鄰近該對應元件的一第二側的一第二非對稱反射器具有一第二面積。A backlight as in claim 9, wherein a first asymmetric reflector located on a first side of a corresponding element adjacent to a corresponding first light source has a first area, and a second asymmetric reflector located on a second side of the corresponding element adjacent to a corresponding second light source has a second area. 如請求項9之背光,其中每個對稱反射器的一中心與一對應光源對準。A backlight as in claim 9, wherein a center of each symmetrical reflector is aligned with a corresponding light source. 如請求項9之背光,其中每個對稱反射器的一中心相對於一對應光源偏移。A backlight as in claim 9, wherein a center of each symmetrical reflector is offset relative to a corresponding light source. 一種背光,包括: 一基板; 複數個光源,該等複數個光源鄰近該基板; 一反射層,該反射層位於該基板上;及 一圖案化漫射器,該圖案化漫射器包括位於該等複數個光源上方的複數個圖案化反射器,每個圖案化反射器與一對應光源對準,並且每個圖案化反射器的一反射率從一第一位置處的一第一值變化為小於該第一值的一第二位置處的一第二值,以及從該第二位置處的該第二值變化為大於該第二值的一第三位置處的一第三值,該第一位置位於每個圖案化反射器的一中心,該第二位置距該第一位置一第一距離,該第三位置距該第一位置一第二距離,該第二距離大於該第一距離。 A backlight comprises: a substrate; a plurality of light sources, the plurality of light sources being adjacent to the substrate; a reflective layer, the reflective layer being located on the substrate; and a patterned diffuser, the patterned diffuser comprising a plurality of patterned reflectors located above the plurality of light sources, each patterned reflector being aligned with a corresponding light source, and a reflectivity of each patterned reflector varying from a first value at a first position to a second value at a second position less than the first value, and varying from the second value at the second position to a third value at a third position greater than the second value, the first position being located at a center of each patterned reflector, the second position being a first distance from the first position, and the third position being a second distance from the first position, the second distance being greater than the first distance. 如請求項14之背光,其中每個圖案化反射器的該第三位置鄰近該圖案化反射器與至少兩個相鄰圖案化反射器的一相交處。The backlight of claim 14, wherein the third position of each patterned reflector is adjacent to an intersection of the patterned reflector and at least two adjacent patterned reflectors. 如請求項14之背光,其中每個圖案化反射器的該第三位置包括一矩形區域,該矩形區域鄰近該圖案化反射器與一相鄰圖案化反射器的一相交處。The backlight of claim 14, wherein the third position of each patterned reflector comprises a rectangular area proximate an intersection of the patterned reflector and an adjacent patterned reflector. 如請求項14之背光,其中每個圖案化反射器的反射率還從該第一位置處的該第一值變化為一第四位置處的該第二值,以及從該第四位置處的該第二值變化為一第五位置處的一第四值,該第四位置距該第一位置該第一距離,該第五位置距該第一位置一第三距離,該第三距離大於該第二距離,該第四值大於該第二值且小於該第三值。A backlight as in claim 14, wherein the reflectivity of each patterned reflector also changes from the first value at the first position to the second value at a fourth position, and from the second value at the fourth position to a fourth value at a fifth position, the fourth position being the first distance from the first position, the fifth position being a third distance from the first position, the third distance being greater than the second distance, and the fourth value being greater than the second value and less than the third value. 一種背光,包括: 一基板; 複數個光源,該等複數個光源鄰近該基板; 一反射層,該反射層位於該基板上,該反射層具有一第一反射率;及 複數個元件,該等複數個元件鄰近該基板,每個元件鄰近該等複數個光源中的一對應的第一最近光源、第二最近光源、第三最近光源和第四最近光源,該對應的第一光源、第二光源、第三光源和第四光源中的每一者的一對應中心作為頂點形成一對應的四邊形,每個元件具有不同於該第一反射率的一第二反射率,並且每個元件的一中心與該對應的第一最近光源之間的一距離是該對應的四邊形的一中心與該對應的第一最近光源之間的一距離的至少約80%。 A backlight comprises: a substrate; a plurality of light sources, the plurality of light sources being adjacent to the substrate; a reflective layer, the reflective layer being located on the substrate and having a first reflectivity; and a plurality of elements, the plurality of elements being adjacent to the substrate, each element being adjacent to a corresponding first nearest light source, a second nearest light source, a third nearest light source and a fourth nearest light source among the plurality of light sources, a corresponding quadrilateral being formed with a corresponding center of each of the corresponding first light source, second light source, third light source and fourth light source as a vertex, each element having a second reflectivity different from the first reflectivity, and a distance between a center of each element and the corresponding first nearest light source being at least about 80% of a distance between a center of the corresponding quadrilateral and the corresponding first nearest light source. 如請求項18之背光,其中每個元件的中心與該對應的第一最近光源之間的距離是該對應的四邊形的一中心與該對應的第一最近光源之間的距離的至少約98%。A backlight as in claim 18, wherein the distance between the center of each element and the corresponding first nearest light source is at least about 98% of the distance between a center of the corresponding quadrilateral and the corresponding first nearest light source. 如請求項18之背光,其中該第二反射率小於該第一反射率。A backlight as in claim 18, wherein the second reflectivity is less than the first reflectivity. 如請求項18之背光,還包括: 一圖案化漫射器,該圖案化漫射器包括位於該等複數個光源和該等複數個元件上方的複數個圖案化反射器和複數個補償特徵結構,每個圖案化反射器位於一對應光源上方並且具有一變化的透射率,並且每個補償特徵結構位於一對應元件上方。 The backlight of claim 18 further comprises: A patterned diffuser, the patterned diffuser comprising a plurality of patterned reflectors and a plurality of compensating feature structures located above the plurality of light sources and the plurality of elements, each patterned reflector being located above a corresponding light source and having a varying transmittance, and each compensating feature structure being located above a corresponding element. 一種背光,包括: 一基板; 複數個調光區,每個調光區包括鄰近該基板的複數個光源,並且包括該等複數個光源之間的一第一間距 Px和一第二間距 Py; 一反射層,該反射層位於該基板上,該反射層具有一第一反射率;及 一元件,該元件位於每個調光區內鄰近該基板,該元件具有不同於該第一反射率的一第二反射率,並且該元件的一中心與該等複數個光源中的一最近光源之間的一距離 d1由下式提供: A backlight comprises: a substrate; a plurality of dimming zones, each of which comprises a plurality of light sources adjacent to the substrate and comprises a first spacing Px and a second spacing Py between the plurality of light sources; a reflective layer located on the substrate, the reflective layer having a first reflectivity; and an element located in each dimming zone adjacent to the substrate, the element having a second reflectivity different from the first reflectivity, and a distance d1 between a center of the element and a nearest light source among the plurality of light sources is provided by the following formula: . 如請求項22之背光,其中該元件的中心與該最近光源之間的距離 d1由下式提供: The backlight of claim 22, wherein the distance d1 between the center of the element and the nearest light source is provided by: . 如請求項22之背光,其中該第二反射率小於該第一反射率。A backlight as in claim 22, wherein the second reflectivity is less than the first reflectivity. 如請求項22之背光,還包括: 一圖案化漫射器,該圖案化漫射器包括位於每個調光區內的該等複數個光源和該元件上方的複數個圖案化反射器和複數個補償特徵結構,每個圖案化反射器位於一對應光源上方並且具有一變化的透射率,並且每個補償特徵結構位於一對應元件上方。 The backlight of claim 22 further comprises: A patterned diffuser, the patterned diffuser comprising the plurality of light sources in each dimming zone and a plurality of patterned reflectors and a plurality of compensating feature structures above the element, each patterned reflector being located above a corresponding light source and having a varying transmittance, and each compensating feature structure being located above a corresponding element.
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