TW202422644A - Substrate bonding device, substrate bonding system and substrate bonding method - Google Patents

Abstract

The invention discloses a substrate bonding device, a substrate bonding system, and a substrate bonding method to provide a substrate bonding technology capable of improving bonding precision between substrates. The substrate bonding device according to an embodiment of the invention includes: a first chuck configured to support a first substrate; and a second chuck disposed above and opposite to the first chuck and configured to support a second substrate. The first chuck includes: a first base, a first deformation plate configured to support the first substate and installed on the first base in a manner that the distance from the first base can be changed, and a plurality of expansion elements disposed in a space between the first base and the first deformation plate in contact with an upper surface of the first base and a bottom surface of the first deformation plate and configured to expand to deform the first deformation plate.

Description

Substrate bonding device, substrate bonding system and substrate bonding method

The present invention relates to a substrate bonding system including a substrate bonding device and a substrate bonding method.

In the manufacturing process of semiconductor devices, a substrate bonding process for bonding two or more substrates to each other can be performed. Such a substrate bonding process can be performed in order to increase the mounting density of semiconductor chips in semiconductor devices. For example, a semiconductor module having a structure of stacked semiconductor chips improves the mounting density of semiconductor chips, and is also beneficial for shortening the wiring length between semiconductor chips and high-speed signal processing. When manufacturing a semiconductor module having a stacked semiconductor chip structure, the process of bonding in wafer units and then cutting in stacked semiconductor chip units can improve productivity compared to bonding in semiconductor chip units.

The substrate bonding process can be performed by a wafer-to-wafer method in which two wafers are directly bonded without a separate medium. Generally, the wafer-to-wafer method is performed using a bonding device including a chuck for supporting the wafer and components for pressurizing the wafer.

FIG. 1 and FIG. 2 are diagrams showing an example of a conventional substrate bonding method in sequence. The substrate bonding process of the first substrate S1 and the second substrate S2 can be performed by a first chuck 100 supporting the first substrate S1 and a second chuck 200 supporting the second substrate S2. At this time, the substrate bonding process of the first substrate S1 and the second substrate S2 starts in a state where the first substrate S1 is supported by the first chuck 100 and the second substrate S2 is supported by the second chuck 200.

1 , the first chuck 100 may be configured as a lower chuck, and the second chuck 200 may be configured as an upper chuck. For precise bonding between the first substrate S1 and the second substrate S2, the first chuck 100 may further include a deforming plate for deforming the first substrate S1.

Referring to FIG. 2 , the substrate bonding process can be completed by deforming the substrate (wafer), releasing the vacuum used for substrate adsorption, and bonding process. The substrate deformation process is a process of deforming the substrate in order to bond the substrate. The first substrate S1 and the second substrate S2 can be deformed by the pressurizing structures provided on the first chuck 100 and the second chuck 200, respectively. Specifically, in a state where the vacuum adsorption of the central area of the second substrate S2 is released, as the pressurizing structure presses the centers of the first substrate S1 and the second substrate S2, the center of the first substrate S1 and the center of the second substrate S2 are in contact. Thereafter, the vacuum adsorption of the second substrate S2 can be gradually released in the direction from the center of the second substrate S2 toward the peripheral area, thereby, the bonding area between the first substrate S1 and the second substrate S2 can be gradually diffused. At this time, not only the second substrate S2, but also a part of the vacuum adsorption of the first substrate S1 can be released. When the diffusion of the bonding area is completed, the pressure on the substrate used for deformation can be released. As the adsorption used to support the substrate is completely released, the bonding surfaces of the first substrate S1 and the second substrate S2 are bonded to each other, completing the bonding process.

According to such conventional substrate bonding methods, local deformation is concentrated in the center of the substrates S1 and S2, which may cause a problem that deformation does not occur in the outer periphery of the substrates S1 and S2. In other words, there is a problem that local control of substrate deformation is very disadvantageous in order to improve bonding accuracy.

The present invention is used to solve the above-mentioned problems and aims to provide a substrate bonding technology capable of controlling the local deformation of the substrate through a chuck.

In addition, the present invention aims to provide a substrate bonding technology capable of finely adjusting deformation of a substrate by controlling deformation of the substrate by a chuck in each area.

The problems to be solved by the present invention are not limited to the problems mentioned above, and those skilled in the art can clearly understand other problems not mentioned from the following description.

According to an embodiment of the present invention, a substrate bonding device is provided, comprising: a first chuck configured to support a first substrate; and a second chuck disposed above the first chuck and opposite to the first chuck and configured to support the second substrate so that the first substrate and the second substrate are bonded to each other. The first chuck may include: a first base; a first deformable disk supporting the first substrate and mounted on the first base in a manner capable of changing the distance from the first base; and a plurality of expansion components, which are arranged in a space between the first base and the first deformable disk so as to contact the upper surface of the first base and the lower surface of the first deformable disk, and expand to deform the first deformable disk.

In one embodiment, the substrate engaging device may further include: a controller that individually controls the deformation of each of the plurality of expansion components.

In one embodiment, the controller may control a supply flow rate of the gas supplied to each of the plurality of expansion elements.

In one embodiment, the controller may control at least one of a supply timing, a supply speed, and a supply time of the gas supplied to each of the plurality of expansion components.

In one embodiment, the plurality of expansion components may include: one or more first expansion components disposed below a central region of the first deformable disk; and a plurality of second expansion components disposed below a peripheral region surrounding the central region of the first deformable disk.

In one embodiment, the second expansion member may be arranged to surround the first expansion member and may be provided to have the same size as that of the first expansion member.

In one embodiment, the second expansion member may be arranged to surround the first expansion member and may be smaller in size than the first expansion member.

In one embodiment, the second expandable member may be provided to have two or more sizes, including a first size smaller than the first expandable member and a second size smaller than the first size, and the second expandable member of the first size and the second expandable member of the second size are alternately arranged one by one along the circumference of the first expandable member.

In one embodiment, the first deformable disk may adsorb the substrate to fix the position of the substrate, and the plurality of expansion components may expand when the substrate is adsorbed on the first deformable disk.

In one embodiment, when viewed from above, the multiple expansion parts in the expanded state may be in the shape of a circle, a polygon, a polygon with rounded corners, a circle with a circle or polygon running through the central area, a polygon with a circle or polygon running through the central area, or a polygon with rounded corners running through the central area.

In one embodiment, the controller may control an expansion sequence of each of the plurality of expansion components.

According to an embodiment of the present invention, a substrate bonding method is provided, comprising: an alignment step of aligning a second chuck having a second substrate on a first chuck having a first deformable plate supporting a first substrate; a first substrate deforming step of deforming the first deformable plate to deform the first substrate; and a bonding step of bonding the deformed first substrate and the second substrate. The first substrate deforming step may include a process of deforming the first deformable plate by inflating a plurality of expansion components disposed below the first deformable plate.

In one embodiment, the first base plate deformation step may control the deformation of each of the plurality of expansion components individually and control the deformation of the first deformation disk by region.

In one embodiment, the first substrate deformation step may control at least one of a supply flow rate, a supply time point, a supply speed, and a supply time of the gas supplied to each of the plurality of expansion components.

In one embodiment, the first substrate deformation step may further include a process of controlling an expansion sequence of each of the plurality of expansion components.

According to an embodiment of the present invention, a substrate bonding system is provided for bonding a substrate and a substrate. The substrate bonding system includes: a plasma processing device for performing plasma processing on a substrate; an alignment device for aligning the position of the substrate subjected to plasma processing by the plasma processing device; and a substrate bonding device for bonding the substrates whose positions are aligned by the alignment device. It may be that the substrate joining device includes: a first chuck, configured to support a first substrate; and a second chuck, arranged above the first chuck and opposite to the first chuck, and configured to support the second substrate, the first chuck includes: a first base; a first deformable disk, supporting the first substrate and mounted on the first base in a manner capable of changing the distance from the first base; a plurality of expansion components, arranged in a space between the first base and the first deformable disk, and expanding in a state of contacting the bottom of the first deformable disk to deform the first deformable disk; and a controller, individually controlling the deformation of each of the plurality of expansion components.

According to the embodiment of the present invention, the deformation of the first deformation disk is controlled by using a plurality of expansion components, and the deformation of the first deformation disk is controlled by region by controlling the expansion of each expansion component individually, so that the deformation of the first deformation disk and the deformation of the first substrate deformed by the first deformation disk can be uniformly and precisely managed. The bonding process between the two substrates is performed in a state where the first substrate is precisely deformed, so that the reliability of the substrate bonding process can be improved.

The effects of the present invention are not limited to the above-mentioned effects, and those skilled in the art can clearly understand other effects not mentioned from the following description.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings, but the present invention is not limited to or restricted to the embodiments.

In order to illustrate the present invention and the advantages of the present invention and the objectives achieved by the implementation of the present invention, the following examples illustrate preferred embodiments of the present invention and are observed with reference to them.

First, the terms used in this application are only used to illustrate specific embodiments and are not intended to limit the present invention. As long as the context does not clearly indicate otherwise, a singular expression may include a plural expression. In addition, in this application, it should be understood that the terms "including" or "having" are intended to specify the features, numbers, steps, tasks, constituent elements, parts, or combinations thereof described in the specification, and do not preclude the existence or additional possibility of one or more other features or numbers, steps, tasks, constituent elements, parts, or combinations thereof.

When describing the present invention, if it is determined that a specific description of a related known structure or function may obscure the gist of the present invention, the detailed description will be omitted.

FIG. 3 shows an embodiment of a substrate bonding system according to the present invention.

3 , the substrate bonding system 10 may include a pre-processing device such as a plasma processing device 40 and a cleaning device 50 disposed in a cleaning chamber 20 , an alignment device 60 , and a substrate bonding device 70 . In addition, the substrate bonding system 10 may further include a cassette stage 30 disposed at one side of the cleaning chamber 20 .

In an exemplary embodiment, the cleaning chamber 20 may be formed in a space in the form of a regular hexahedron having an inner space, and forms a space to block dust and foreign matter while maintaining a cleanliness within a preset range.

The cassette stage 30 can provide a space for storing substrates. A carrier (FOUP; front-opening wafer transfer box) C capable of storing multiple substrates can be supported on a support plate 32 of the cassette stage 30. The substrates stored in the carrier C can be moved to the inside of the clean room 20 by the transfer robot 22. For example, three carriers C can be arranged on the cassette stage 30. It can be that the first and second carriers C store the first and second wafers bonded to each other, and the third carrier C stores the wafer that has completed the bonding process.

The plasma treatment device 40 can perform plasma treatment on the surface of the substrate. The plasma treatment device 40 can be a device for irradiating plasma to the surface of the substrate arranged in an inductively coupled plasma (ICP) chamber to form a suspended key (or mixed key) on the surface of the substrate. However, the plasma generated by the plasma treatment device is not limited to inductively coupled plasma, for example, it can be capacitively coupled plasma or microwave plasma.

The cleaning device 50 can clean the surface of the substrate after the plasma treatment by the plasma treatment device 40. The cleaning device 50 can coat DIW (Deionized Water) on the surface of the substrate using a spin coater. DIW can not only clean the surface of the substrate but also make the hydroxyl group (-OH) on the surface of the substrate well bonded, thereby more easily forming a dangling bond on the surface of the substrate.

The alignment device 60 can sense the flat portion (or cutout) of the substrate to align the substrate. The substrate aligned by the alignment device 60 can be transferred to the substrate bonding device 70 by the transfer robot 22.

Next, the substrate bonding apparatus 70 of FIG. 3 will be described.

FIG. 4 is a cross-sectional view showing a substrate bonding device 70 according to an exemplary embodiment.

The substrate bonding device 70 may include a lower chuck structure and an upper chuck structure. The upper chuck structure may fix the first substrate, and the lower chuck structure may fix the second substrate.

Any one or all of the upper chuck structure and the lower chuck structure can be raised and lowered to pressurize and join the first substrate and the second substrate. For example, a push rod can be arranged on the upper chuck structure and the lower chuck structure, and the first substrate and the second substrate are joined from the center of the substrate to the periphery by raising and lowering the push rod. Alternatively, a pressurizing member that is blown up by injecting air or gas can be arranged on the upper chuck structure and the lower chuck structure, and the first substrate and the second substrate are joined from the center of the substrate to the periphery by blowing up the pressurizing member.

Furthermore, the substrate bonding system 10 may further include an annealing device (not shown) for thermally treating the bonded substrates. In addition, the substrate bonding system 10 may further include a polishing device (not shown) for polishing the surface of any one of the bonded substrates.

4 , the substrate bonding apparatus 70 may include a first chuck 100 , a second chuck 200 , a controller 300 , and a chamber 71 accommodating the first chuck 100 and the second chuck 200 .

The first chuck 100 can support the first substrate S1. The first chuck 100 can be configured to fix the first substrate S1 using vacuum pressure. As an example, the first chuck 100 can include a first vacuum pump 190 capable of applying vacuum pressure to a first vacuum groove 130 provided in a portion where the first substrate S1 is placed. If vacuum pressure is formed in the first vacuum groove 130 by the first vacuum pump 190, the first substrate S1 can be vacuum-adsorbed to the first chuck 100. Alternatively, the first chuck 100 can also be configured to support the first substrate S1 using electrostatic force. When the first chuck 100 is configured to fix the first substrate S1 using electrostatic force, the first chuck 100 can include an electrode that receives a power source and generates an electrostatic force for fixing the first substrate S1.

The second chuck 200 may be arranged opposite to the first chuck 100 and support the second substrate S2. The second chuck 200 may be configured to fix the second substrate S2 using vacuum pressure. As an example, the second chuck 200 may include a second vacuum pump 290 capable of applying vacuum pressure to a second vacuum tank 230 provided in a portion where the second substrate S2 is placed. If vacuum pressure is formed in the second vacuum tank 230 by the second vacuum pump 290, the second substrate S2 may be vacuum-adsorbed to the second chuck 200. Alternatively, the second chuck 200 may also be configured to support the second substrate S2 using electrostatic force.

The first chuck 100 may be a lower chuck, and the second chuck 200 may be an upper chuck disposed above the first chuck 100. However, the present invention is not limited thereto, and the second chuck 200 may be a lower chuck, and the first chuck 100 may be an upper chuck disposed above the second chuck 200.

The first chuck 100 may include a first base 110 , a first deformable plate 120 mounted above the first base 110 , a first vacuum pump 190 , a plurality of expansion components 140 , and a gas supply portion 150 .

The first deformation plate 120 may include a first vacuum groove 130 capable of forming a vacuum pressure. The first vacuum pump 190 may apply vacuum pressure to the first vacuum groove 130 to vacuum-adsorb the first substrate S1 onto one surface of the first deformation plate 120, or may release the vacuum pressure of the first vacuum groove 130 to release the vacuum adsorption of the first substrate S1. The first vacuum groove 130 may include a plurality of vacuum grooves arranged between the center and the periphery of the first deformation plate 120, and the first vacuum pump 190 may be configured to independently adjust the pressure formed in the plurality of vacuum grooves.

The first deformable disk 120 can be installed above the first base 110 in a manner that the distance from the first base 110 can be changed. As an example, the outer periphery of the first deformable disk 120 can be fixed to the first base 110, and the inner side portion of the fixed outer periphery of the first deformable disk 120 can be deformed into a bulge by an external force. The first deformable disk 120 can be deformed in a state of adsorbing and supporting the first substrate S1, so that the first substrate S1 is deformed. At this time, the curvature of the deformed first substrate S1 can be adjusted by the curvature of the first deformable disk 120.

The first deformable plate 120 may include metal, ceramic, rubber, or a combination thereof. For example, the first deformable plate 120 may include aluminum or silicon carbide (SiC).

A plurality of expansion components 140 are provided in the space 121 between the first base 110 and the first deformable disk 120. The expansion components 140 are provided in a state of contacting the lower surface of the first deformable disk 120 and the upper surface of the first base 110. The expansion components 140 can be expanded by the gas injected into the expansion components 140, thereby deforming the first deformable disk 120. As an example, the gas injected into the expansion components 140 can be air. The expansion components 140 can be expanded in a state where the first substrate S1 is adsorbed on the first deformable disk 120, thereby deforming the first deformable disk 120, thereby deforming the first substrate S1.

The expansion member 140 can expand by receiving gas from the gas supply part 150. When the expansion member 140 is observed from above in a state of expanding by receiving gas from the gas supply part 150, one of the shapes of a circle, a polygon, a polygon with rounded corners, a circle with a circle or polygon running through the center, a polygon with a circle or polygon running through the center, and a polygon with rounded corners running through the center can be observed. For example, the shape of the expansion member 140 that expands by injecting gas into the internal space may include a sphere, a column, a polygonal column, a ring, a tube, etc.

The expansion member 140 may include one or more first expansion members 141 disposed below the central region of the first deformable disk 120 and a plurality of second expansion members 142 disposed below the peripheral region surrounding the central region of the first deformable disk 120. That is, the plurality of second expansion members 142 may be disposed in a form surrounding the first expansion member 141. As an example, as shown in FIG6 , the expansion member 140 may include one first expansion member 141 disposed below the central portion of the first deformable disk 120 and a plurality of second expansion members 142 surrounding the first expansion member 141. The number of the first expansion members 141, the number of the second expansion members 142, and the size, type, and number of the expansion members 140 may be changed according to the required bonding precision, and the arrangement structure thereof may also be changed. This is described in detail later.

The supply flow rate of the gas supplied to each expansion part 140, that is, the gas supply amount to each expansion part 140 can be controlled individually according to each expansion part 140 and controlled differently according to the area. In this way, the curvature of the first deformable disk 120 can be controlled. For example, the flow rate of the gas supplied to the first expansion part 141 can be controlled to be greater than the flow rate of the gas supplied to the second expansion part 142. That is, the expansion degree of the first expansion part 141 can be controlled to be greater than the expansion degree of the second expansion part 142. At this time, if the difference between the gas supply amount to the first expansion part 141 and the gas supply amount to the second expansion part 142 increases, the first deformable disk 120 is deformed to increase the curvature, and the first substrate S1 supported by the first deformable disk 120 can also be deformed to increase the curvature. In addition, if the difference between the gas supply amount to the first expansion member 141 and the gas supply amount to the second expansion member 142 decreases, the curvature of the first deformable disk 120 decreases, and the first substrate S1 supported by the first deformable disk 120 may also be deformed to have a smaller curvature.

The gas supply part 150 may include a gas supply source 151 for supplying gas to the expansion part 140 and a supply line 152 for connecting the expansion part 140. The gas supply source 151 may supply gas to the inside of the expansion part 140 through the supply line 152. Each expansion part 140 may be connected to a gas supply part 150 provided separately for each expansion part 140. That is, the gas supply source 151 and the supply line 152 may be provided in a number equal to the number of the expansion parts 140, and connected to the expansion parts 140 in a one-to-one correspondence manner. A valve 153 for controlling the supply flow rate of the gas supplied to each expansion part 140 may be provided on each supply line 152. As an example, valve 153 can be a flow control valve.

Each gas supply unit 150 can be controlled individually by the controller 300. The supply flow rate of the gas supplied to the inside of each expansion component 140 can be controlled by controlling the gas supply unit 150 by the controller 300. As an example, the supply flow rate of the gas supplied to the expansion component 140 can be controlled by controlling the valve 153 provided on each supply line 152 by the controller 300. On the other hand, different from the above description, the gas supply unit 150 can also include an integrated gas supply source, and the supply lines 152 connected to each expansion component 140 can be connected to the integrated gas supply source.

The second base 210 may include a second vacuum tank 230 capable of forming a vacuum pressure. The second vacuum pump 290 may apply vacuum pressure to the second vacuum tank 230 to vacuum-adsorb the second substrate S2 onto one surface of the second base 210, or may release the vacuum pressure of the second vacuum tank 230 to release the vacuum adsorption of the second substrate S2. The second vacuum tank 230 may include a plurality of vacuum tanks arranged between the center and the periphery of the second base 210, and the second vacuum pump 290 may be configured to individually adjust the pressure formed in the plurality of vacuum tanks.

The press pin 215 may be provided at the center portion of the second base 210 so as to be movable in a vertical direction. The press pin 215 may be configured to be reciprocating in a substantially vertical direction (e.g., Z direction) relative to the second substrate S2. The press pin 215 may include an actuator for realizing the reciprocating movement. For example, the actuator of the press pin 215 may include a multilayer piezoelectric actuator, a voice coil motor, a rack and pinion engaged with the motor, and the like.

The controller 300 may be configured to comprehensively control the bonding process between the first substrate S1 and the second substrate S2 using the substrate bonding device 70. For example, the controller 300 may control the operation of the first chuck 100 and the operation of the second chuck 200, and may be configured to control a chuck actuator (not shown) that bears the movement of the first chuck 100 and the movement of the second chuck 200. In addition, the controller 300 according to the embodiment of the present invention may be configured to control the bonding process between the first substrate S1 and the second substrate S2 by individually controlling the plurality of expansion members 140.

The controller 300 can individually control the plurality of expansion components 140. For example, the controller 300 can control the valve 153 corresponding to each of the plurality of expansion components 140 to control the supply flow rate of the gas supplied to each expansion component 140, the supply timing of the gas, the supply speed of the gas, the supply time of the gas, etc.

Optionally, the controller 300 may also control the expansion sequence of each of the plurality of expansion components 140. For example, the controller may control the expansion start sequence and expansion completion sequence of each of the plurality of expansion components 140 by controlling the gas supply timing, gas supply speed, gas supply time, etc. to each expansion component 140 based on the size of each expansion component 140.

As an example, the controller 300 can control the expansion of the plurality of expansion components 140 to be the same. When the first expansion component 141 and the second expansion component 142 are formed to be the same size, the gas supply speed to the first expansion component 141 can be controlled to be greater than the gas supply speed to the second expansion component 142, and the gas supply time point and the gas supply time can be controlled to be the same. When the first expansion component 141 and the second expansion component 142 are different in size, the gas supply time point, the gas supply speed, and the gas supply time can be controlled separately based on their sizes.

As an example, the controller 300 can control the expansion of the plurality of expansion components 140 to be different in time. When the first expansion component 141 and the second expansion component 142 are formed in the same size, the gas supply time and gas supply speed to each expansion component can be controlled to be the same, and the gas supply time to the first expansion component 141 is controlled to be longer than the gas supply time to the second expansion component 142. When the first expansion component 141 and the second expansion component 142 are different in size, the gas supply time, gas supply speed and gas supply time can be controlled separately based on their sizes.

The controller 300 may be implemented by hardware, firmware, software, or any combination thereof. For example, the controller 300 may be a computing device such as a workstation computer, a desktop computer, a laptop computer, a tablet computer, etc. The controller 300 may also be a simple controller, a microprocessor, a complex processor such as a CPU, a GPU, etc., a processor constituted by software, dedicated hardware, or firmware. The controller 300 may be implemented, for example, by an ordinary computer or application-specific hardware such as a DSP (Digital Signal Process), an FPGA (Field Programmable Gate Array), and an ASIC (Application Specific Integrated Circuit).

In some exemplary embodiments, the operation of the controller 300 may be implemented by instructions stored in a mechanically readable medium that can be read and executed by one or more processors. Here, the mechanically readable medium may include any mechanical device for storing and/or transmitting information in a form that can be read by a machine (e.g., a computing device). For example, the mechanically readable medium may include ROM (Read Only Memory), RAM (Random Access Memory), magnetic disk storage media, optical storage media, flash memory devices, electrical, optical, acoustic or other forms of radio wave signals (e.g., carrier waves, infrared signals, digital signals, etc.) and other arbitrary signals.

The controller 300 can be implemented by firmware, software, computer programs, and instructions for executing the bonding process. For example, the controller 300 can receive data for feedback, generate signals for executing the bonding process, and be implemented by software that executes predetermined operations.

The chamber 71 may surround the first chuck 100 and the second chuck 200. The chamber 71 may provide an inner space for performing a bonding process between the first substrate S1 and the second substrate S2. In an exemplary embodiment, a vacuum pressure or an atmospheric pressure may be formed in the inner space of the chamber 71.

The chamber 71 may include an opening 72. The first substrate S1 and the second substrate S2 may be moved into or out of the inner space of the chamber 71 through the opening 72 of the chamber 71. In order to protect the inner space of the chamber 71 from the external environment, the opening 72 may be closed or sealed as needed.

Fig. 5 is a flow chart showing a substrate bonding method according to an embodiment of the present invention. Fig. 6 to Fig. 11 are cross-sectional views showing the substrate bonding method according to an embodiment of the present invention in sequence. Hereinafter, the substrate bonding method using the substrate bonding apparatus according to an embodiment of the present invention will be described in detail with reference to Fig. 5 and Fig. 6 to Fig. 11.

5 and 6 , the second chuck 200 on which the second substrate S2 is disposed is aligned on the first chuck 100 on which the first substrate S1 is disposed ( S100 ).

In the substrate alignment step (S100), the first substrate S1 may be loaded onto the first chuck 100 in such a manner that the inactive surface of the first substrate S1 contacts the first chuck 100, and the second substrate S2 may be loaded onto the second chuck 200 in such a manner that the inactive surface of the second substrate S2 contacts the second chuck 200. The bonding surface of the second substrate S2 loaded onto the second chuck 200 may face the bonding surface of the first substrate S1 loaded onto the first chuck 100.

The first chuck 100 may form a vacuum pressure in each of the first central vacuum groove 131 for vacuum-absorbing the central area of the first substrate S1, the first middle vacuum groove 133 for vacuum-absorbing the middle area between the central area and the peripheral area of the first substrate S1, and the first peripheral vacuum groove 135 for vacuum-absorbing the peripheral area of the first substrate S1 in order to support the first substrate S1. In addition, the second chuck 200 may form a vacuum pressure in each of the second central vacuum groove 231 for vacuum-absorbing the central area of the second substrate S2, the second middle vacuum groove 233 for vacuum-absorbing the middle area between the central area and the peripheral area of the second substrate S2, and the second peripheral vacuum groove 235 for vacuum-absorbing the peripheral area of the second substrate S2 in order to support the second substrate S2.

In the substrate alignment step (S100), the first chuck 100 and the second chuck 200 may be aligned in a vertical direction (e.g., Z direction). To align the first chuck 100 and the second chuck 200, at least one of the first chuck 100 and the second chuck 200 may be moved in a horizontal direction (e.g., X direction and/or Y direction), and may also be rotated about a vertical direction (e.g., Z direction).

5 and 7 , after the first chuck 100 and the second chuck 200 are aligned, the first substrate S1 of the first chuck 100 is deformed ( S200 ).

In the first substrate deformation step (S200), the first deformation plate 120 may be deformed while supporting the first substrate S1, so that the first substrate S1 supported on one side of the first deformation plate 120 is deformed. For example, the first deformation plate 120 may be deformed to bulge upward while vacuum adsorbing the first substrate S1, and the first substrate S1 may be deformed to bulge upward corresponding to the deformation of the first deformation plate 120. At this time, the first substrate S1 is deformed in a state of being closely attached to the first deformation plate 120, so the deformed first substrate S1 may have a curvature corresponding to the curvature of one side of the first deformation plate 120.

According to an embodiment of the present invention, the first substrate deformation step (S200) may include a process of causing a plurality of expansion parts 140 disposed below the first deformation plate 120 to expand so as to deform the first deformation plate 120. The plurality of expansion parts 140 may individually control their own deformation, thereby controlling the deformation of the first deformation plate 120 by region.

Specifically, the supply flow rate of the gas supplied to each expansion component 140, that is, the gas supply amount to each expansion component 140 can be controlled individually according to each expansion component 140 and differently controlled according to the region. In this way, the curvature of the first deformable disk 120 can be controlled. For example, the flow rate of the gas supplied to the first expansion component 141 can be controlled to be greater than the flow rate of the gas supplied to the second expansion component 142. That is, the expansion degree of the first expansion component 141 can be controlled to be greater than the expansion degree of the second expansion component 142. At this time, if the difference between the gas supply amount to the first expansion part 141 and the gas supply amount to the second expansion part 142 increases, the first deformation disk 120 is deformed to increase the curvature, and the first substrate S1 supported by the first deformation disk 120 may also increase the curvature. In addition, if the difference between the gas supply amount to the first expansion part 141 and the gas supply amount to the second expansion part 142 decreases, the first deformation disk 120 is deformed to decrease the curvature, and the first substrate S1 supported by the first deformation disk 120 may also be deformed to decrease the curvature.

On the other hand, the first substrate deformation step (S200) may further include a process of controlling the expansion sequence of each expansion component 140. For example, the expansion start sequence and expansion completion sequence of each of the plurality of expansion components 140 may be controlled by controlling the gas supply timing, gas supply speed, gas supply time, etc. to each expansion component 140 based on the size of each expansion component 140.

As an example, the first substrate deformation step (S200) can be controlled so that the time points at which the multiple expansion parts 140 complete expansion are the same. When the first expansion part 141 and the second expansion part 142 are formed to be the same size, the gas supply speed to the first expansion part 141 can be controlled to be greater than the gas supply speed to the second expansion part 142, and the gas supply time point and the gas supply time can be controlled to be the same. When the first expansion part 141 and the second expansion part 142 are different in size, the gas supply time point, gas supply speed and gas supply time can be controlled separately based on their sizes.

As an example, the first substrate deformation step (S200) can be controlled so that the time points at which the multiple expansion parts 140 complete expansion are different. When the first expansion part 141 and the second expansion part 142 are formed in the same size, the gas supply time point and the gas supply speed to each expansion part can be controlled to be the same, and the gas supply time to the first expansion part 141 is controlled to be longer than the gas supply time to the second expansion part 142. When the first expansion part 141 and the second expansion part 142 are different in size, the gas supply time point, the gas supply speed and the gas supply time can be controlled separately based on their sizes.

If the deformation of the first substrate S1 by the first deformation plate 120 is completed, the first substrate S1 and the second substrate S2 are bonded (S300). According to one embodiment of the present invention, the bonding between the first substrate S1 and the second substrate S2 can make the first substrate S1 and the second substrate S2 contact at a contact point, and then the bonding area between the first substrate S1 and the second substrate S2 is expanded to bond the outer peripheral area of the first substrate S1 and the outer peripheral area of the second substrate S2.

5 and 8 , in order to make the first substrate S1 and the second substrate S2 contact at a contact point, the second chuck 200 releases the vacuum pressure on the second central vacuum groove 231 and maintains the vacuum pressure on the second intermediate vacuum groove 233 and the second peripheral vacuum groove 235. In the state of releasing the vacuum adsorption on the central area of the second substrate S2, the pressurizing pin 215 can pressurize the center of the second substrate S2. As the central area of the second substrate S2 pressurized by the pressurizing pin 215 is deformed to bulge toward the first substrate S1, the first substrate S1 and the second substrate S2 can contact at a contact point. A contact point can be defined as a bonding initiation point where the bonding of the first substrate S1 and the second substrate S2 begins. For example, the bonding initiation point can be a point where the center of the bonding surface of the first substrate S1 and the center of the bonding surface of the second substrate S2 meet.

Referring to FIG. 5 and FIG. 9 , thereafter, the vacuum adsorption of the second substrate S2 can be gradually released from the center of the second substrate S2 toward the outer peripheral area of the second substrate S2, so that the bonding area between the first substrate S1 and the second substrate S2 is expanded. If the second chuck 200 releases the vacuum pressure on the second middle vacuum groove 233, the bonding between the first substrate S1 and the second substrate S2 can be automatically formed without the application of other external forces. Through the expansion of the automatic bonding between the first substrate S1 and the second substrate S2, the central area and the middle area of the first substrate S1 can be bonded to the central area and the middle area of the second substrate S2.

In an exemplary embodiment, the bonding surface of the first substrate S1 and the bonding surface of the second substrate S2 may have a surface that has been plasma treated or wet treated, respectively. For example, each of the bonding surface of the first substrate S1 and the bonding surface of the second substrate S2 is formed with -OH functional groups brought by surface treatment, and when the first substrate S1 and the second substrate S2 are bonded, the -OH functional groups present on the bonding surface of the first substrate S1 and the -OH functional groups present on the bonding surface of the second substrate S2 may be automatically bonded by hydrogen bonds.

On the other hand, when the bonding between the first substrate S1 and the second substrate S2 is expanded, the chuck actuator (not shown) that moves the first chuck 100 and the second chuck 200 can reduce the distance between the first chuck 100 and the second chuck 200 to flatten the center area of the first deformable disk 120 located inside the first center vacuum groove 131, and flatten the middle area of the first deformable disk 120 between the first center vacuum groove 131 and the first middle vacuum groove 133. At this time, in order to help the center area and the middle area of the first deformable disk 120 to be flattened, the expansion degree of each expansion part 140 can be controlled. As an example, as shown in FIG. 9, the expansion degree of the expansion part 140 located in the area corresponding to the first middle vacuum groove 133 can be increased. Alternatively, the expansion degree of the expansion member 140 located in the area corresponding to the first central vacuum groove 131 may be reduced. As the central area and the middle area of the first deformation plate 120 are flattened, the bonding surface of the first substrate S1 and the bonding surface of the second substrate S2 can be bonded flatly.

When the bonding between the first substrate S1 and the second substrate S2 expands, the controller 300 may control the expansion degree of each expansion member 140 based on the process flow. In addition, the distance between the first chuck 100 and the second chuck 200 may be adjusted.

5 and 10, the second chuck 200 then releases the vacuum pressure on the second peripheral vacuum groove 235, and the first chuck 100 releases the vacuum pressure on the first peripheral vacuum groove 135, so that the bonding between the peripheral area of the first substrate S1 and the peripheral area of the second substrate S2 can be automatically formed without the application of other external forces. If the bonding between the peripheral area of the first substrate S1 and the peripheral area of the second substrate S2 is completed, a bonded substrate can be formed in which the bonding surface of the first substrate S1 and the bonding surface of the second substrate S2 are bonded to each other.

As shown in Fig. 11, once the bonding between the first substrate S1 and the second substrate S2 is completed, the step of unloading the bonded substrate can be performed. To unload the bonded substrate, the second chuck 200 can be moved away from the first chuck 100, and the first chuck 100 can completely release the adsorption of the bonded substrate.

On the other hand, FIG. 12 and FIG. 13 show various examples of configuring a plurality of expansion parts 140. As shown in FIG. 12, a plurality of expansion parts 140 configured between the first base 110 and the first deformation disk 120 may be provided to have the same size. It may be that a first expansion part 141 is provided at the center of the first deformation disk 120, and the second expansion part 142 is configured in a form surrounding the first expansion part 141. As shown in FIG. 12 (a), FIG. 12 (b), and FIG. 12 (c), the number of second expansion parts 142 may be increased according to the deformation accuracy of the first substrate S1 to be obtained.

Different from that shown in Fig. 12, the plurality of expansion members 140 disposed between the first base 110 and the first deformable disc 120 may be provided so that each expansion member 140 has a different size as shown in Fig. 13. For example, as shown in Fig. 13 (a) and Fig. 13 (b), the second expansion member 142 may be provided to have a smaller size than the first expansion member 141.

In addition, the second expansion member 142 may be provided in two or more sizes. As shown in FIG. 13( c ), the second expansion member 142 may include an expansion member 142 of a first size smaller than the first expansion member 141 and an expansion member 143 of a second size smaller than the first size. When the second expansion member 142 is formed in two or more sizes, as shown in FIG. 13( c ), the second expansion members 142 may be alternately arranged one by one along the circumference of the first expansion member 141 in different sizes.

The more the number of expansion parts 140 increases and the more the sizes of the expansion parts 140 are set to various, the more precisely the deformation of the first deformation disk 120 can be controlled. As a result, the curvature of the first substrate S1 can also be controlled more precisely. That is, the local deformation of the first substrate S1 can be precisely controlled by adjusting the number of expansion parts 140 and the size of the expansion parts 140, thereby increasing the bonding precision between the substrates and improving the reliability of the substrate bonding process.

On the other hand, FIG. 12 and FIG. 13 show an example in which all the expansion parts 140 are circular when viewed from above, but as described above, when viewed from above, the expansion parts 140 in the expanded state may be in one of the following shapes: a circle, a polygon, a polygon with rounded corners, a circle with a circle or polygon running through the center, a polygon with a circle or polygon running through the center, and a polygon with rounded corners running through the center. For example, the shape of the expansion parts 140 that expand by injecting gas into the internal space may include a sphere, a column, a polygonal column, a ring, a tube, etc. In addition, the number of the first expansion parts 141 may also be set to plural.

The present invention is described above, and the present invention is not limited to the disclosed embodiments and the attached drawings, and ordinary technical personnel can make various modifications within the scope of the technical concept of the present invention. In addition, the technical concept described in the embodiments of the present invention can be implemented independently or in combination with two or more.

10: substrate bonding system 20: cleaning chamber 22: transfer robot 30: cassette table 32: support plate 40: plasma processing device 50: cleaning device 60: alignment device 70: substrate bonding device 71: chamber 72: opening 100: first chuck 110: first base 120: first deformable plate 121: space 130: first vacuum tank 131: first central vacuum tank 133: first intermediate vacuum tank 135: first peripheral vacuum tank 140: expansion member 141: first expansion member 142: second expansion member 143: second size expansion member 150: gas supply unit 151: Gas supply source 152: Supply line 153: Valve 190: First vacuum pump 200: Second chuck 210: Second base 215: Pressurization pin 230: Second vacuum tank 231: Second center vacuum tank 233: Second middle vacuum tank 235: Second peripheral vacuum tank 290: Second vacuum pump 300: Controller C: Carrier S1: First substrate S2: Second substrate S100, S200, S300: Steps

FIG. 1 and FIG. 2 are diagrams sequentially showing an example of a conventional substrate bonding method.

FIG3 is a structural diagram showing the structure of a substrate bonding system according to an embodiment of the present invention.

FIG. 4 is a cross-sectional view schematically showing the substrate bonding device of FIG. 3 .

FIG5 is a flow chart showing a substrate bonding method according to an embodiment of the present invention.

6 to 11 are cross-sectional views sequentially illustrating a substrate bonding method according to an embodiment of the present invention.

12 and 13 are top views showing the configuration of an expansion member according to an exemplary embodiment of the present invention.

71: Chamber

72: Opening

100: First Chuck

110: First base

120: First deformation plate

121: Space

130: First vacuum tank

140: Expansion parts

150: Gas supply department

190: First vacuum pump

200: Second chuck

210: Second base

215:Pressure pin

230: Second vacuum tank

290: Second vacuum pump

300: Controller

S1: First substrate

S2: Second substrate

Claims (20)

A substrate bonding device includes: a first chuck configured to support a first substrate; and a second chuck configured to support the second substrate above the first chuck and opposite to the first chuck, and configured to support the second substrate, the first chuck includes: a first base; a first deformable disk supporting the first substrate and mounted on the first base in a manner capable of changing the distance from the first base; and a plurality of expansion components, which are arranged in a space between the first base and the first deformable disk to contact the upper surface of the first base and the lower surface of the first deformable disk, and expand to deform the first deformable disk. The substrate bonding device as described in claim 1, wherein, the substrate bonding device further comprises: a controller that individually controls the deformation of each of the plurality of expansion components. A substrate bonding device as described in claim 2, wherein the controller controls the supply flow rate of the gas supplied to each of the plurality of expansion components. The substrate bonding device as described in claim 3, wherein, the controller controls at least one of the supply timing, supply speed, and supply time of the gas supplied to each of the plurality of expansion components. The substrate bonding device as described in claim 1, wherein, the plurality of expansion components include: one or more first expansion components, arranged below the central region of the first deformable disk; and a plurality of second expansion components, arranged below the peripheral region surrounding the central region of the first deformable disk. The substrate bonding device as described in claim 5, wherein the second expansion member is configured to surround the first expansion member and is provided to be the same size as the first expansion member. The substrate bonding device as described in claim 5, wherein the second expansion member is arranged to surround the first expansion member and is provided in a smaller size than the first expansion member. The substrate bonding device as described in claim 7, wherein, the second expansion member includes an expansion member of a first size smaller than the first expansion member and an expansion member of a second size smaller than the first size, the expansion member of the first size and the expansion member of the second size are alternately arranged one by one along the circumference of the first expansion member. A substrate bonding device as described in claim 1, wherein, the first deformable disk absorbs the substrate to fix the position of the substrate, and the plurality of expansion components expand when the substrate is absorbed by the first deformable disk. The substrate bonding device as described in claim 1, wherein, when viewed from above, the plurality of expansion parts in the expanded state are in the shape of a circle, a polygon, a polygon with rounded corners, a circle with a circle or polygon running through the center, a polygon with a circle or polygon running through the center, or a polygon with rounded corners running through the center. A substrate bonding device as described in claim 3, wherein the controller controls the expansion sequence of each of the plurality of expansion components. A substrate bonding method includes: an alignment step of aligning a second chuck having a second substrate on a first chuck including a first deformable disk supporting a first substrate; a first substrate deformation step of deforming the first deformable disk to deform the first substrate; and a bonding step of bonding the deformed first substrate and the second substrate, the first substrate deformation step including a process of deforming the first deformable disk by inflating a plurality of expansion components disposed below the first deformable disk. A substrate bonding method as described in claim 12, wherein, the first substrate deformation step controls the deformation of each of the plurality of expansion components individually and controls the deformation of the first deformation disk by region. The substrate bonding method as described in claim 13, wherein, the first substrate deformation step controls at least one of the supply flow rate, supply timing, supply speed, and supply time of the gas supplied to each of the plurality of expansion components. The substrate bonding method as described in claim 14, wherein, the first substrate deformation step further includes a process of controlling the expansion sequence of each of the plurality of expansion components. A substrate bonding system for bonding a substrate and a substrate, the substrate bonding system comprising: a plasma processing device for performing plasma processing on a substrate; an alignment device for aligning the position of the substrate subjected to plasma processing by the plasma processing device; and a substrate bonding device for bonding the substrates aligned by the alignment device, the substrate bonding device comprising: a first chuck configured to support a first substrate; and a second chuck configured above the first chuck and opposite to the first chuck and configured to support a second substrate, the first chuck comprising: a first base; a first deformable plate for supporting the first substrate and mounted on the first base in a manner capable of changing the distance from the first base; A plurality of expansion components are disposed in the space between the first base and the first deformation disk, and expand in a state of contacting the bottom of the first deformation disk to deform the first deformation disk; and a controller that individually controls the deformation of each of the plurality of expansion components. A substrate bonding system as described in claim 16, wherein the controller controls at least one of the supply flow rate, supply timing, supply speed, and supply time of the gas supplied to each of the plurality of expansion components. A substrate bonding system as described in claim 16, wherein, the plurality of expansion components include: one or more first expansion components, arranged in the central portion of the first deformation disk; and one or more second expansion components, arranged in a form surrounding the first expansion component. A substrate bonding system as described in claim 16, wherein, the first deformable disk absorbs the substrate to fix the position of the substrate, and the plurality of expansion components expand when the substrate is absorbed by the first deformable disk. A substrate bonding system as described in claim 17, wherein the controller controls the expansion sequence of each of the plurality of expansion components.