TW202422258A - Error factor analysis device and error factor analysis method - Google Patents
Error factor analysis device and error factor analysis method Download PDFInfo
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Abstract
Description
本發明關於一種對由檢查裝置等產生之錯誤之因素進行解析之錯誤因素解析裝置及錯誤因素解析方法。The present invention relates to an error factor analysis device and an error factor analysis method for analyzing factors of errors generated by an inspection device or the like.
半導體檢查裝置或半導體測量裝置依照被稱為配方之設定參數,按半導體晶圓之表面之每個檢查點實施檢查,或按每個測定點實施測量。但,於使用調整不充分之配方之情形、或裝置之特性因經時變化而變化之情形等時,可能於檢查或測量產生錯誤,成為使裝置之運轉率降低之一原因。於解析該種錯誤之因素之情形時,裝置之使用者大多必須實施確認各檢查值、各測定值、或掃描型電子顯微鏡之攝像圖像(以下稱為SEM(Scanning Electron Microscope:掃描電子顯微鏡)圖像)等之手動作業,錯誤因素之解析需要相當之時間。Semiconductor inspection equipment or semiconductor measurement equipment performs inspection at each inspection point on the surface of a semiconductor wafer or performs measurement at each measurement point according to setting parameters called recipes. However, when an insufficiently adjusted recipe is used or when the characteristics of the device change over time, errors may occur during inspection or measurement, which may reduce the operating rate of the device. When analyzing the factors of such errors, the user of the device must often perform manual operations such as confirming each inspection value, each measurement value, or a photographic image taken by a scanning electron microscope (hereinafter referred to as a SEM (Scanning Electron Microscope) image), and the analysis of the error factors requires considerable time.
作為錯誤因素解析中之課題之一,有時必須正確推定錯誤之原因步驟。半導體之檢查步驟或測量步驟可進而分解為對準、尋址、測長等之複數個小步驟,於各小步驟中算出預先登錄於配方之模板圖像與拍攝測定點之SEM圖像之匹配分數,若匹配分數為閾值以上,則判斷為圖案檢測成功,轉移至下一個小步驟。As one of the topics in error factor analysis, it is sometimes necessary to correctly infer the cause of the error. The inspection step or measurement step of semiconductors can be further decomposed into multiple small steps such as alignment, addressing, and length measurement. In each small step, the matching score between the template image pre-registered in the recipe and the SEM image of the measurement point is calculated. If the matching score is above the threshold, it is judged that the pattern detection is successful and transferred to the next small step.
然而,若該閾值之設定不適當,則儘管原本為應判定為圖案檢測失敗之小步驟,但有時跳過錯誤判定而轉移至下一個小步驟,實際上錯誤推定為於無錯誤之後段之小步驟有錯誤原因。因此,為了正確解析錯誤因素,重要的是正確推定產生錯誤之小步驟。However, if the threshold is not set properly, the error judgment may be skipped and the next step may be moved to the next step, even though the step should be judged as a pattern detection failure. In fact, the error is inferred that there is an error in the subsequent step without error. Therefore, in order to correctly analyze the error factor, it is important to correctly infer the error-causing step.
此處,作為推定產生錯誤或不佳情況之小步驟之先前技術,已知專利文獻1之基板檢查系統。例如,於該文獻之摘要記載有「即使非熟練者,亦可容易辨識不良之原因。」,於段落0056記載有「於分析用資訊記憶部202,設置分析用程式資料庫221、分析用程式選擇表222、原因-對策表223、原因-根據表224、顯示用圖像資料庫225等。」。又,於該文獻之圖12至圖14,例示有各表之構成,於圖15揭示有使用各表之不良原因之特定處理。Here, as a prior art for the small step of inferring the occurrence of an error or a bad situation, the substrate inspection system of Patent Document 1 is known. For example, in the abstract of the document, it is recorded that "even an unskilled person can easily identify the cause of the bad situation.", and in paragraph 0056, it is recorded that "in the analysis information storage unit 202, an analysis program database 221, an analysis program selection table 222, a cause-countermeasure table 223, a cause-basis table 224, a display image database 225, etc. are set." In addition, in Figures 12 to 14 of the document, examples of the composition of each table are shown, and in Figure 15, specific processing of the bad cause using each table is disclosed.
如此,於專利文獻1揭示有一種預先建構各步驟之測定值之特徵與原因步驟之表,並藉由參照該表而推定原因步驟之技術。 [先前技術文獻] [專利文獻] Thus, Patent Document 1 discloses a technology of pre-constructing a table of characteristics of the measured values of each step and the cause step, and inferring the cause step by referring to the table. [Prior Technical Document] [Patent Document]
專利文獻1:日本專利特開2006-339445號公報Patent document 1: Japanese Patent Publication No. 2006-339445
[發明所欲解決之問題][The problem the invention is trying to solve]
此處,若變更半導體檢查裝置或半導體測量裝置中使用之檢查、測量配方,則因錯誤產生之機制亦變化,故為了利用專利文獻1之不良原因特定處理,需要按每個配方建構各種表。若為製造多量少品種之半導體製品之生產步驟,則因可長期使用相同配方,故即使於每次配方切換時建構各種表,其勞力亦不太大。然而,若為製造少量多品種之半導體製品之生產步驟,則需要頻繁切換配方,故於每次配方切換時建構各種表不現實。Here, if the inspection and measurement recipes used in the semiconductor inspection device or the semiconductor measurement device are changed, the mechanism of error generation will also change. Therefore, in order to utilize the specific treatment of the defective cause of patent document 1, it is necessary to construct various tables according to each recipe. If it is a production step for manufacturing a large number of semiconductor products with a small variety, the same recipe can be used for a long time, so even if various tables are constructed each time the recipe is switched, the labor is not too great. However, if it is a production step for manufacturing a small number of semiconductor products with a large variety, it is necessary to switch the recipe frequently, so it is not practical to construct various tables each time the recipe is switched.
又,作為其他方法,可考慮應用異常檢測之方法,藉由自與預先收集之正常資料之落差度判定各步驟有無異常而推定原因步驟之方法。然而,於該情形時,因需要對頻繁切換之數十、數百個配方各者定義正常資料之作業,故需要辨別正常資料之知識或工數,較為困難。As another method, an abnormality detection method can be considered, which determines whether each step is abnormal by comparing the difference between the normal data collected in advance and the abnormal data, and infers the cause step. However, in this case, since it is necessary to define normal data for each of the dozens or hundreds of recipes that are frequently switched, the knowledge or man-hours required to identify normal data are relatively difficult.
因此,本發明之目的在於提供一種不建構測定值與錯誤原因步驟之關係表、或不進行正常資料之收集或定義,即可推定檢測到之錯誤之原因步驟,並藉由解析該錯誤原因步驟之資料,推定錯誤因素之技術。 [解決問題之技術手段] Therefore, the purpose of the present invention is to provide a technology that can infer the cause step of the detected error without constructing a relationship table between the measured value and the error cause step, or without collecting or defining normal data, and infer the error factor by analyzing the data of the error cause step. [Technical means for solving the problem]
為了解決上述課題,本發明之錯誤因素解析裝置係於由檢查裝置測量之資料集包含錯誤之情形時,基於上述資料集,自構成檢查步驟之複數個小步驟推定錯誤原因之小步驟者;且具備:錯誤標籤賦予部,其自與包含檢測到錯誤之測定點之小步驟不同之小步驟之測定點,推定與檢測到錯誤之測定點關聯之錯誤關聯測定點,且對檢測到上述錯誤之測定點及上述錯誤關聯測定點賦予錯誤標籤;錯誤相關計算部,其自賦予了上述錯誤標籤之測定點與未賦予之測定點之資料之不同,按每個小步驟推定與錯誤產生高度相關之特徵量;異常度計算部,其對上述高度相關之特徵量,根據賦予了錯誤標籤之測定點與未賦予之測定點之資料之統計性落差之程度,按每個小步驟計算特徵量基礎之異常度;及異常步驟推定部,其基於每個小步驟之異常度推定錯誤原因之小步驟。 [發明之效果] In order to solve the above-mentioned problem, the error factor analysis device of the present invention is a device that, when a data set measured by an inspection device includes an error, infers the sub-step of the error cause from a plurality of sub-steps constituting the inspection step based on the above-mentioned data set; and is provided with: an error label assignment unit, which infers an error-related measurement point associated with the measurement point where the error is detected from a measurement point of a sub-step different from the sub-step including the measurement point where the error is detected, and assigns an error label to the measurement point where the error is detected and the error-related measurement point. label; an error correlation calculation unit, which estimates the characteristic quantity highly correlated with the error generation according to the difference between the data of the measurement point assigned with the error label and the measurement point not assigned with the error label for each small step; an anomaly calculation unit, which calculates the anomaly based on the characteristic quantity for each small step according to the degree of statistical difference between the data of the measurement point assigned with the error label and the measurement point not assigned with the error label for the highly correlated characteristic quantity; and an abnormal step estimation unit, which estimates the small step of the error cause based on the anomaly of each small step. [Effect of the invention]
根據本發明之錯誤因素解析裝置及錯誤因素解析方法,即使於製品或測量、檢查裝置之配方變更之情形時,亦可不按每個配方建構各種表、或不進行正常資料之收集或定義,而推定檢測到之錯誤之原因步驟。According to the error factor analysis device and error factor analysis method of the present invention, even when the recipe of a product or a measuring or inspection device is changed, the cause of the detected error can be inferred without constructing various tables according to each recipe or collecting or defining normal data.
上述以外之課題、構成及效果藉由以下實施形態之說明而明確。The topics, structures and effects other than those mentioned above will be clarified by the following description of the implementation forms.
以下,使用圖式,說明本發明之錯誤因素解析裝置及錯誤因素解析方法之實施例。另,於以下,「半導體檢查裝置」不僅意指測量形成於半導體晶圓表面之圖案之尺寸之裝置,亦包含檢查形成於半導體晶圓表面之圖案有無缺陷之裝置、檢查未形成圖案之裸晶圓有無缺陷之裝置、及組合了該等裝置之複合裝置。又,「檢查」意指亦用於測量之意義,「檢查動作」意指亦用於測量動作之意義。此外,「檢查對象」不僅意指成為測量對象或檢查對象之晶圓,亦指該晶圓中之測量對象區域或檢查對象區域。又,於以下,「錯誤」除測定不佳情況或裝置故障外,亦包含警報或警告訊息等錯誤之預兆。 實施例1 The following uses drawings to illustrate embodiments of the error factor analysis device and the error factor analysis method of the present invention. In addition, in the following, "semiconductor inspection device" not only means a device for measuring the size of a pattern formed on the surface of a semiconductor wafer, but also includes a device for inspecting whether the pattern formed on the surface of a semiconductor wafer has defects, a device for inspecting whether a bare wafer without a pattern formed has defects, and a composite device combining these devices. Furthermore, "inspection" means also used for measurement, and "inspection action" means also used for measurement action. In addition, "inspection object" not only means a wafer that becomes a measurement object or an inspection object, but also refers to a measurement object area or an inspection object area in the wafer. In addition, in the following, "error" includes not only poor measurement conditions or device failures, but also warnings or warning messages that are precursors to errors. Example 1
首先,使用圖1至圖7說明本發明之實施例1之錯誤因素解析裝置。First, the error factor analysis device of the first embodiment of the present invention is described using FIG. 1 to FIG. 7 .
(資訊處理系統之概要) 圖1係顯示本實施例之資訊處理系統100之構成例之概略圖。如本圖所示,資訊處理系統100具有半導體檢查裝置1、資料庫2、錯誤因素解析裝置3、終端4及網路N。以下,依次說明各者。 (Overview of information processing system) Figure 1 is a schematic diagram showing an example of the configuration of the information processing system 100 of this embodiment. As shown in this figure, the information processing system 100 has a semiconductor inspection device 1, a database 2, an error factor analysis device 3, a terminal 4, and a network N. Each of them will be described in turn below.
半導體檢查裝置1係檢查形成於半導體晶圓表面之圖案之尺寸之裝置等,經由網路N與資料庫2或錯誤因素解析裝置3連接。The semiconductor inspection device 1 is a device for inspecting the size of a pattern formed on the surface of a semiconductor wafer, and is connected to a database 2 or an error factor analysis device 3 via a network N.
資料庫2係記錄自半導體檢查裝置1發送之裝置資料、配方、測量結果、錯誤結果等之資料之記錄裝置。The database 2 is a recording device that records device data, recipes, measurement results, error results, etc. sent from the semiconductor inspection device 1.
錯誤因素解析裝置3係於半導體檢查裝置1實施之檢查步驟有錯誤之情形時用於解析該錯誤因素之裝置,具體而言,係具備CPU(Central Processing Unit:中央處理單元)等之運算裝置、半導體記憶體等之記憶裝置、及通信裝置等之硬體之電腦。該錯誤因素解析裝置3可為於半導體檢查裝置1之使用者管理之設施內運用之本地部署,亦可為於該設施外運用之雲端。又,亦可於半導體檢查裝置1組入錯誤因素解析裝置3之功能。The error factor analysis device 3 is a device used to analyze the error factor when an error occurs in the inspection step implemented by the semiconductor inspection device 1. Specifically, it is a computer having hardware such as a CPU (Central Processing Unit), a semiconductor memory, and a communication device. The error factor analysis device 3 can be a local deployment used in the facility managed by the user of the semiconductor inspection device 1, or it can be a cloud used outside the facility. In addition, the function of the error factor analysis device 3 can also be incorporated into the semiconductor inspection device 1.
終端4係具備作為向使用者提示錯誤因素解析裝置3之解析結果時之GUI(Graphical User Interface:圖形使用者介面)發揮功能之顯示器之裝置,經由有線或無線之通信線路,與錯誤因素解析裝置3可通信地連接。The terminal 4 is a device having a display functioning as a GUI (Graphical User Interface) for presenting the analysis result of the error factor analysis device 3 to the user, and is communicatively connected to the error factor analysis device 3 via a wired or wireless communication line.
(資料庫2所記錄之資料) 自半導體檢查裝置1發送並記錄於資料庫2,進而,由錯誤因素解析裝置3解析之資料中,例如包含裝置資料、配方、測量結果、錯誤結果。以下依次說明各資料。 (Data recorded in database 2) The data sent from semiconductor inspection device 1 and recorded in database 2, and then analyzed by error factor analysis device 3, for example, includes device data, recipes, measurement results, and error results. The following describes each data in turn.
裝置資料包含裝置固有參數、裝置機差校正資料及觀察條件參數。裝置固有參數係用於使半導體檢查裝置1按照規定規格動作之校正參數。裝置機差校正資料係用於校正半導體檢查裝置間之機差之參數。觀察條件參數例如係規定電子光學系統之加速電壓等之掃描型電子顯微鏡(SEM)之觀察條件之參數。The device data includes device-specific parameters, device error correction data, and observation condition parameters. The device-specific parameters are correction parameters used to make the semiconductor inspection device 1 operate according to the specified specifications. The device error correction data are parameters used to correct the error between semiconductor inspection devices. The observation condition parameters are parameters that specify the observation conditions of a scanning electron microscope (SEM), such as the acceleration voltage of the electron optical system.
配方包含晶圓映射、各種參數(對準參數、尋址參數、測長參數)、模板圖像等。晶圓映射係半導體晶圓表面之座標映射(例如圖案之座標)。對準參數例如係用於校正半導體晶圓表面之座標系與半導體檢查裝置1內部之座標系之間之偏移之參數。尋址參數例如係對形成於半導體晶圓表面之圖案中、存在於檢查對象區域內之特徵圖案進行特定之資訊。測長參數係記述測定長度之條件之參數,例如為指定對圖案中之何部位之長度進行測定之參數。模板圖像係用於以圖案匹配檢測測定點之基準圖像。The recipe includes wafer mapping, various parameters (alignment parameters, addressing parameters, length measurement parameters), template images, etc. Wafer mapping is the coordinate mapping of the surface of the semiconductor wafer (for example, the coordinates of the pattern). Alignment parameters are, for example, parameters used to correct the offset between the coordinate system of the surface of the semiconductor wafer and the coordinate system inside the semiconductor inspection device 1. Addressing parameters are, for example, information that specifies the characteristic pattern formed on the surface of the semiconductor wafer and existing in the inspection object area. Length measurement parameters are parameters that describe the conditions for measuring the length, for example, parameters that specify which part of the pattern is to be measured for length. Template images are reference images used to match the pattern to detect measurement points.
另,配方中可包含測定點數、測定點(Evaluation Point:EP)之座標資訊、拍攝圖像時之攝像條件等。又,配方中亦可與測定點一起而包含在用於測量測定點之準備階段取得之圖像之座標或攝像條件等。In addition, the recipe may include the number of evaluation points, coordinate information of the evaluation points (EP), imaging conditions when taking images, etc. In addition, the recipe may also include the coordinates of images obtained in the preparation stage for measuring the evaluation points or imaging conditions, etc.
測量結果包含測長結果、圖像資料及動作日誌。測長結果記述對半導體晶圓表面之圖案之長度進行測定之結果。圖像資料係半導體晶圓之觀察圖像。動作日誌係記述對準、尋址及測長之各動作步驟中半導體檢查裝置1之內部狀態之資料。例如,可舉出各零件之動作電壓、觀察視野之座標等。The measurement results include length measurement results, image data, and action logs. The length measurement results record the results of measuring the length of the pattern on the surface of the semiconductor wafer. The image data is the observed image of the semiconductor wafer. The action log is the data that records the internal state of the semiconductor inspection device 1 in each action step of alignment, addressing, and length measurement. For example, the action voltage of each component, the coordinates of the observation field, etc. can be cited.
錯誤結果係於產生錯誤之情形時,顯示於對準、尋址及測長之各動作步驟之何者產生之錯誤之參數。The error result is a parameter that shows which of the alignment, addressing and length measurement steps caused the error when an error occurs.
(檢查步驟之概要) 圖2顯示半導體檢查裝置1之檢查步驟之一例。將此處例示之檢查步驟分解為步驟P1至步驟P5之5個動作步驟(小步驟)。即,於步驟P1中,藉由光學(OM:Optical Microscope,光學顯微鏡)模式之對準,校正測定晶圓與半導體檢查裝置之載台之位置偏移。接著,於步驟P2中,藉由電子束(SEM)模式之對準,校正測定晶圓與載台之位置偏移。隨後,於步驟P3、P4中,藉由尋址向測長座標移動視野。最後,於步驟P5中,對形成於測定晶圓表面之圖案之尺寸進行測長。藉由以上之檢查步驟,半導體檢查裝置1檢查半導體晶圓。 (Overview of inspection steps) Figure 2 shows an example of inspection steps of the semiconductor inspection device 1. The inspection steps illustrated here are decomposed into five action steps (sub-steps) from step P1 to step P5. That is, in step P1, the position offset between the wafer and the stage of the semiconductor inspection device is corrected by alignment in the optical (OM: Optical Microscope) mode. Then, in step P2, the position offset between the wafer and the stage is corrected by alignment in the electron beam (SEM) mode. Subsequently, in steps P3 and P4, the field of view is moved to the length measurement coordinate by addressing. Finally, in step P5, the size of the pattern formed on the surface of the wafer is measured. Through the above inspection steps, the semiconductor inspection device 1 inspects the semiconductor wafer.
此處,於各動作步驟中,算出登錄於配方之模板圖像與拍攝測定點之SEM圖像之匹配分數,若匹配分數為閾值以上,則為圖案檢測成功而轉移至下一動作步驟。但,若該閾值不適當,則儘管檢測出與原本不同之位置等因而圖案檢測失敗,但有時會跳過錯誤判定而轉移至下一個動作步驟。於該情形時,與實際檢測到錯誤之動作步驟不同之、有跳過情形之動作步驟便成為錯誤原因。Here, in each action step, the matching score between the template image registered in the recipe and the SEM image of the photographed measurement point is calculated. If the matching score is above the threshold, the pattern detection is successful and the next action step is transferred. However, if the threshold is inappropriate, although the pattern detection fails due to the detection of a different position from the original, the error judgment may be skipped and the next action step may be transferred. In this case, the action step that is different from the action step where the error is actually detected and the skipped action step becomes the cause of the error.
因此,於本實施例中,即使於後續之動作步驟中檢測到錯誤之情形時,亦推定成為錯誤原因之前之動作步驟,以可基於此前之動作步驟中取得之資料正確解析錯誤因素之方式,設置如下之錯誤因素解析裝置3。Therefore, in this embodiment, even when an error is detected in a subsequent action step, the action step before the error is presumed to be the cause, and the following error factor analysis device 3 is set up in such a way that the error factor can be correctly analyzed based on the data obtained in the previous action step.
(錯誤因素解析裝置之構成及處理內容) 圖3顯示本實施例之錯誤因素解析裝置3之詳細構成。如此處所示,錯誤因素解析裝置3具備步驟別資料選取部31、錯誤標籤賦予部32、錯誤相關計算部33、異常度計算部34、異常度記憶部35、異常步驟推定部36,使用該等輸出異常步驟推定結果D1。又,錯誤相關計算部33具備特徵量產生部33a、錯誤分類模型學習部33b、及模型解析部33c,異常度計算部34具備特徵量選取部34a、與特徵量基礎計算部34b。另,各功能部係藉由一般之電腦即錯誤因素解析裝置3之運算裝置執行讀入記憶裝置之預定程式而實現者。 (Structure and processing contents of the error factor analysis device) Figure 3 shows the detailed structure of the error factor analysis device 3 of this embodiment. As shown here, the error factor analysis device 3 has a step data selection unit 31, an error label assignment unit 32, an error correlation calculation unit 33, an abnormality calculation unit 34, an abnormality storage unit 35, and an abnormal step estimation unit 36, which outputs an abnormal step estimation result D1. Furthermore, the error correlation calculation unit 33 includes a characteristic quantity generation unit 33a, an error classification model learning unit 33b, and a model analysis unit 33c, and the abnormality calculation unit 34 includes a characteristic quantity selection unit 34a and a characteristic quantity basic calculation unit 34b. In addition, each functional unit is realized by executing a predetermined program read into a memory device by a general computer, i.e., an operation device of the error factor analysis device 3.
圖4係錯誤因素解析裝置3之處理流程圖。於以下,一面適當參照圖3與圖4,一面說明錯誤因素解析裝置3之錯誤因素解析處理之細節。Fig. 4 is a process flow chart of the error factor analysis device 3. In the following, the details of the error factor analysis process of the error factor analysis device 3 are described while referring to Fig. 3 and Fig. 4 as appropriate.
((步驟S1)) 首先,於步驟S1中,步驟別資料選取部31使用欲解析錯誤因素之配方,自資料庫2取得半導體檢查裝置1測量之資料集,並按各動作步驟別分割資料。一般而言,因對收集至資料庫2之資料集賦予用於區分其為於何動作步驟測量者之識別編號,故可使用該識別編號將資料集分割為各動作步驟別之測量資料。 ((Step S1)) First, in step S1, the step data selection unit 31 uses the formula for analyzing the error factor to obtain the data set measured by the semiconductor inspection device 1 from the database 2, and divides the data according to each action step. Generally speaking, since the data set collected in the database 2 is given an identification number for distinguishing the action step at which it is measured, the identification number can be used to divide the data set into the measurement data of each action step.
且,自該分割之測量資料選取可能與檢測出之錯誤有關之動作步驟之測量資料。可能與該錯誤有關之動作步驟例如可設為檢測到錯誤之動作步驟與其上游之動作步驟、尋址-測長之重複動作之一系列動作步驟、或測量時序接近之動作步驟等之資料。Furthermore, the measurement data of the action step that may be related to the detected error is selected from the segmented measurement data. The action step that may be related to the error may be, for example, the action step that detected the error and its upstream action step, a series of action steps of repeated actions of addressing-length measurement, or action steps with close measurement timing.
((步驟S2)) 接著,於步驟S2中,錯誤標籤賦予部32對於步驟S1中選取之步驟資料,向檢測到錯誤之測定點賦予錯誤標籤,且亦向推定為對該測定點之檢查性能造成影響之關聯測定點(錯誤關聯測定點)賦予錯誤標籤。 ((Step S2)) Then, in step S2, the error label assigning unit 32 assigns an error label to the measurement point where an error is detected for the step data selected in step S1, and also assigns an error label to the related measurement point (error-related measurement point) that is estimated to have an impact on the inspection performance of the measurement point.
於圖5顯示如此賦予錯誤標籤之步驟別資料之一例。圖5係構成半導體檢查裝置1測量之資料集之、摘錄顯示步驟P1資料與步驟P5資料之圖。於各個步驟別資料中,自左起第1行之「晶圓INDEX」係用於區分半導體晶圓之識別編號。又,自左起第2行之「測定No」係顯示為相同半導體晶圓中之第幾個測定點之連續編號。例如若為於步驟P5資料內之「晶圓INDEX」為「XXX001」之半導體晶圓之「測定No」為「12」之測定項目檢測到錯誤之情形,則本步驟中之錯誤關聯測定點之推定方法將與該半導體晶圓相同之「晶圓INDEX」且更小之「測定No」之測定點(例如步驟P1資料內之「晶圓INDEX」為「XXX001」、「測定No」為「0」或「1」之測定點)推定為錯誤關聯測定點。隨後,如圖示般,錯誤標籤賦予部32對如此推定之錯誤關聯測定點、與成為其起點之錯誤檢測測定點賦予錯誤標籤「1」。FIG5 shows an example of step-specific data with error labels. FIG5 is a diagram showing an extract of step P1 data and step P5 data constituting a data set measured by semiconductor inspection device 1. In each step-specific data, the "wafer INDEX" in the first row from the left is an identification number for distinguishing semiconductor wafers. In addition, the "measurement No" in the second row from the left is a continuous number indicating the number of measurement points in the same semiconductor wafer. For example, if an error is detected in the measurement item with "Measurement No." of "12" for the semiconductor wafer whose "Wafer INDEX" is "XXX001" in the step P5 data, the method for estimating the error-related measurement point in this step will be to infer the measurement point with the same "Wafer INDEX" as the semiconductor wafer and a smaller "Measurement No." (for example, the measurement point with "Wafer INDEX" of "XXX001" and "Measurement No." of "0" or "1" in the step P1 data) as the error-related measurement point. Then, as shown in the figure, the error label assigning unit 32 assigns an error label "1" to the error-related measurement point estimated in this way and the error detection measurement point that serves as the starting point thereof.
((步驟S3)) 於步驟S3中,錯誤相關計算部33自步驟S1中選取之步驟別資料中,將異常度計算未完成之1個(圖5之例中之步驟P1資料或步驟P5資料)選定為步驟S4以後之處理對象。 ((Step S3)) In step S3, the error-related calculation unit 33 selects one of the step-specific data selected in step S1 for which the abnormality calculation is not completed (the step P1 data or the step P5 data in the example of FIG. 5 ) as the processing object after step S4.
((步驟S4)) 於步驟S4中,錯誤相關計算部33自步驟S3中選定之資料(例如圖5之步驟P1資料)產生適於機械學習模型之輸入之特徵量。因此,具體而言執行以下處理。 ((Step S4)) In step S4, the error correlation calculation unit 33 generates a feature quantity suitable for input of the machine learning model from the data selected in step S3 (e.g., the step P1 data in FIG5 ). Therefore, specifically, the following processing is performed.
首先,特徵量產生部33a自有步驟S2中賦予之錯誤標籤之測定點與無錯誤標籤之測定點之資料之不同,計算各特徵量相對於錯誤產生之相關度。接著,特徵量產生部33a使用處理對象之步驟別資料,產生適於辨別有錯誤標籤之資料與無錯誤標籤之資料之機械學習模型之輸入的特徵量。此處,特徵量之產生例如可使用測定資料之定標或統計處理、類別變數之編碼、使交替作用特徵量等之複數個資料組合之複合特徵量製作等。First, the feature quantity generating unit 33a calculates the correlation of each feature quantity with respect to the error generation based on the difference in data between the measurement points with error labels and the measurement points without error labels assigned in step S2. Next, the feature quantity generating unit 33a generates a feature quantity suitable for inputting a machine learning model that distinguishes between data with error labels and data without error labels, using the step identification data of the processing object. Here, the generation of the feature quantity can be performed by, for example, calibration or statistical processing of the measurement data, encoding of the category variables, and production of a composite feature quantity by combining a plurality of data such as alternating feature quantities.
接著,錯誤分類模型學習部33b學習錯誤分類模型,該錯誤分類模型將由特徵量產生部33a產生之特徵量、或步驟S2中賦予之錯誤標籤作為輸入,基於有錯誤標籤之測定點之資料、與無錯誤標籤之測定點之資料之傾向之不同,對該等進行分類。該錯誤分類模型可使用以Random Forest(隨機森林)或XGBoost(極端梯度提升)等之決策樹為基礎之演算法、或Neural Network(神經網路)等任何機械學習演算法而產生。Next, the error classification model learning unit 33b learns an error classification model, which takes the feature quantity generated by the feature quantity generating unit 33a or the error label assigned in step S2 as input, and classifies the data of the measurement points with error labels and the data of the measurement points without error labels based on the difference in tendency. The error classification model can be generated using an algorithm based on a decision tree such as Random Forest or XGBoost (Extreme Gradient Boosting), or any machine learning algorithm such as Neural Network.
再者,模型解析部33c對由錯誤分類模型學習部33b學習之錯誤分類模型,計算輸入之各特徵量對模型輸出即錯誤預測結果造成何種程度之影響之相關度。該相關度例如於由以決策樹為基礎之演算法建構錯誤檢測模型之情形時,可藉由基於各特徵量於模型內之分支出現之個數或目的函數之改善值等計算之變數重要度(Feature Importance)、或計算各特徵量之值對模型輸出之相關度之SHAP(Shapley Additive exPlanations:沙普利可加性模型解釋方法)值而進行評估。Furthermore, the model analysis unit 33c calculates the correlation of each input feature quantity on the model output, i.e., the error prediction result, for the error classification model learned by the error classification model learning unit 33b. This correlation can be evaluated, for example, by calculating the variable importance (Feature Importance) based on the number of branches of each feature quantity in the model or the improvement value of the objective function, or by calculating the SHAP (Shapley Additive exPlanations) value of the correlation between the value of each feature quantity and the model output when constructing an error detection model by an algorithm based on a decision tree.
((步驟S5)) 於步驟S5中,特徵量選取部34a選取步驟S4中計算之相關度較高之特徵量。作為該選取方法,例如可使用自相關度高之順序選取上階N個特徵量之方法、或選取具有預先設定之閾值以上之相關度之特徵量之方法。 ((Step S5)) In step S5, the feature quantity selection unit 34a selects the feature quantity with a higher correlation calculated in step S4. As the selection method, for example, a method of selecting the upper-order N feature quantities in order of high correlation, or a method of selecting feature quantities with a correlation greater than a preset threshold value can be used.
((步驟S6)) 於步驟S6中,特徵量基礎計算部34b計算對步驟S5中選取之錯誤賦予相關較高之特徵量之錯誤標籤之測定點、與無錯誤標籤之測定點之資料之落差度,作為該動作步驟之異常度。該落差度例如可使用歐幾里得距離或馬氏距離。 ((Step S6)) In step S6, the feature value-based calculation unit 34b calculates the difference between the data of the measurement point with an error label and the measurement point without an error label for the error selected in step S5 as the abnormality of the action step. The difference can be, for example, the Euclidean distance or the Mahalanobis distance.
((步驟S7)) 於步驟S7中,異常度記憶部35記憶步驟S6中計算之每個動作步驟之異常度。 ((Step S7)) In step S7, the abnormality memory unit 35 stores the abnormality of each action step calculated in step S6.
((步驟S8)) 於步驟S8中,判定是否對步驟S1中選取之全部動作步驟資料實施了自步驟S3至步驟S7之處理。且,於滿足要件之情形時,進入步驟S9,於不滿足要件之情形時,重複自步驟S3至步驟S7之處理,直至對全部動作步驟資料計算完異常度為止。 ((Step S8)) In step S8, it is determined whether the processing from step S3 to step S7 has been performed on all the action step data selected in step S1. And, if the requirements are met, it proceeds to step S9. If the requirements are not met, it repeats the processing from step S3 to step S7 until the abnormality of all the action step data is calculated.
((步驟S9)) 於步驟S9中,異常步驟推定部36使用步驟S7中記憶之各動作步驟別之異常度,推定成為錯誤原因之動作步驟。作為此處之錯誤原因步驟之推定方法,例如可設為異常度最高之動作步驟、或異常度為預先設定之閾值以上之最上游之動作步驟、或使用學習了與錯誤相關之相關較高之特徵量、步驟別之異常度及原因步驟之關係之機械學習模型進行推定之動作步驟等。 ((Step S9)) In step S9, the abnormal step estimation unit 36 uses the abnormality of each action step type stored in step S7 to estimate the action step that is the cause of the error. As the method of estimating the error cause step here, for example, it can be set to the action step with the highest abnormality, or the most upstream action step with an abnormality above a preset threshold, or the action step estimated using a machine learning model that has learned the relationship between the characteristic quantity with a high correlation with the error, the abnormality of the step type, and the cause step, etc.
本步驟中之錯誤原因步驟之推定結果作為異常步驟推定結果D1輸出。異常步驟推定結果D1係包含異常度記憶部35所記憶之每個動作步驟之異常度、或由異常步驟推定部36推定之錯誤原因步驟等之錯誤解析結果。經由GUI即終端4向使用者提示該等錯誤解析結果。The estimation result of the error cause step in this step is output as the abnormal step estimation result D1. The abnormal step estimation result D1 is an error analysis result including the abnormality degree of each action step stored in the abnormality degree storage unit 35 or the error cause step estimated by the abnormal step estimation unit 36. The error analysis results are presented to the user via the GUI, i.e., the terminal 4.
於圖6顯示向使用者提示錯誤解析結果之方法之一例。於該例中,以條之長度顯示每個動作步驟之異常度之大小,且以與其他步驟不同之顏色(深色)顯示藉由圖4之流程圖之處理推定為錯誤原因之步驟P2。如此,即使於假定於步驟P5檢測到錯誤之情形時,亦可向使用者報知該錯誤之原因於未檢測到錯誤之步驟P2產生。FIG6 shows an example of a method for notifying the user of the error analysis result. In this example, the size of the abnormality of each action step is displayed by the length of a bar, and the step P2 estimated as the cause of the error by the processing of the flowchart of FIG4 is displayed in a different color (dark color) from other steps. In this way, even if an error is detected in step P5, the user can be informed that the cause of the error occurs in step P2 where no error is detected.
(實施例1之效果) 於以上說明之本實施例中,與必須按每個配方準備表或定義之先前之異常檢測方法不同,直接使用產生之錯誤資訊,推定先前之各動作步驟之資料所含之錯誤關聯測定點。且,將該錯誤關聯測定點視為錯誤資料,計算錯誤資料與除此以外之資料之落差度作為各步驟之異常度。 (Effect of Example 1) In the above-described example, unlike the previous abnormality detection method that must be prepared according to each recipe table or definition, the error information generated is directly used to infer the error-related measurement points contained in the data of each previous action step. In addition, the error-related measurement points are regarded as error data, and the difference between the error data and other data is calculated as the abnormality of each step.
藉此,不使用事先準備之測定值與錯誤原因步驟之關係表、或正常資料之收集、定義,即可進行錯誤原因步驟之推定。因此,根據本實施例,即使於為了製造少量多品種之半導體製品而頻繁更新配方之情形時,亦可容易進行與各配方對應之錯誤原因推定。 實施例2 Thus, the error cause step can be estimated without using a pre-prepared relationship table between the measured value and the error cause step, or the collection and definition of normal data. Therefore, according to this embodiment, even when the recipe is frequently updated in order to manufacture a small amount of a variety of semiconductor products, the error cause corresponding to each recipe can be easily estimated. Example 2
接著,參照圖7及圖8,說明實施例2之錯誤因素解析裝置3。另,與實施例1之共通點省略重複說明。Next, the error factor analysis device 3 of the second embodiment will be described with reference to Fig. 7 and Fig. 8. In addition, the common points with the first embodiment will be omitted from repeated description.
自圖3與圖7之比較可明瞭,實施例2之錯誤因素解析裝置3係對實施例1之錯誤因素解析裝置3附加匹配分數基礎之異常度計算部37、與綜合異常度計算部38者。以下,依次說明該等之細節。As is clear from the comparison between FIG3 and FIG7, the error factor analysis device 3 of the second embodiment is the error factor analysis device 3 of the first embodiment with the addition of a matching score-based abnormality calculation unit 37 and a comprehensive abnormality calculation unit 38. The details thereof will be described in turn below.
(匹配分數基礎之異常度計算部37) 一般而言,於資料庫2記錄預先登錄於配方之模板圖像、與拍攝了測定點之SEM圖像之匹配分數。於匹配分數基礎之異常度計算部37中,對可能為由步驟別資料選取部31選取之錯誤原因之步驟別之資料,計算賦予了該匹配分數之錯誤標籤之測定點與無錯誤標籤之測定點之資料之落差度作為異常度。該落差度可使用基於原始資料之平均值或標準偏差之Z分數等。將該匹配分數基礎之步驟別之異常度記憶於異常度記憶部35。 (Matching score-based anomaly calculation unit 37) Generally speaking, the matching scores of the template image pre-registered in the recipe and the SEM image of the measurement point are recorded in the database 2. In the matching score-based anomaly calculation unit 37, for the step-specific data that may be the cause of the error selected by the step-specific data selection unit 31, the difference between the measurement point with the error label assigned to the matching score and the measurement point without the error label is calculated as the anomaly. The difference can be calculated using the Z score based on the mean value or standard deviation of the original data. The step-specific anomaly based on the matching score is stored in the anomaly storage unit 35.
(綜合異常度計算部38) 於綜合異常度計算部38中,自異常度記憶部35所記憶之各異常度計算綜合性之異常度。於圖8顯示該綜合異常度計算之模式圖。自特徵量基礎之異常度及匹配分數基礎之異常度,計算步驟別之綜合異常度。作為該計算方法,例如可設為簡單將兩者之異常度按步驟別相加之方法、取得兩者之最大值之方法、或於分別乘以預先設定之權重後相加之方法等。 (Comprehensive abnormality calculation unit 38) In the comprehensive abnormality calculation unit 38, the comprehensive abnormality is calculated from each abnormality stored in the abnormality storage unit 35. FIG8 shows a schematic diagram of the comprehensive abnormality calculation. The comprehensive abnormality of each step is calculated from the abnormality based on the feature quantity and the abnormality based on the matching score. As the calculation method, for example, a method of simply adding the abnormalities of the two steps, a method of obtaining the maximum value of the two, or a method of adding them after multiplying them by a preset weight, etc. can be used.
(異常步驟推定部36) 於異常步驟推定部36中,使用由綜合異常度計算部38計算之步驟別之綜合異常度,與實施例1同樣基於異常度之高度或閾值而推定成為錯誤原因之步驟。 (Abnormal step estimation unit 36) In the abnormal step estimation unit 36, the comprehensive abnormality of each step calculated by the comprehensive abnormality calculation unit 38 is used to estimate the step that is the cause of the error based on the height or threshold of the abnormality, similarly to the first embodiment.
於如本實施例般計算綜合異常度之情形時,於GUI即終端4,可僅顯示最終之綜合異常度,亦可將成為計算綜合異常度之根據之、特徵量基礎之異常度與匹配分數基礎之異常度之兩者同綜合異常度一起顯示。另,於圖8中,亦與圖6同樣,以與其他步驟不同之顏色(深色)顯示由異常步驟推定部36推定為錯誤原因之步驟,但若為由異常步驟推定部36採用之錯誤步驟之推定方法例如將異常度之大小超過閾值之最上游之步驟推定為錯誤原因之步驟之情形,則如圖8之例般,有時亦將異常度超過閾值之最上游之步驟P1推定為錯誤原因而非異常度最大之步驟P2。When the comprehensive anomaly is calculated as in the present embodiment, the GUI, i.e., the terminal 4, may display only the final comprehensive anomaly, or may display both the feature-based anomaly and the matching score-based anomaly, which are the basis for calculating the comprehensive anomaly, together with the comprehensive anomaly. In addition, in FIG8, as in FIG6, the step estimated as the cause of the error by the abnormal step estimation unit 36 is displayed in a color different from that of other steps (dark color). However, if the error step estimation method adopted by the abnormal step estimation unit 36 is, for example, a situation in which the most upstream step whose abnormality exceeds the threshold is estimated as the cause of the error, then as in the example of FIG8, the most upstream step P1 whose abnormality exceeds the threshold is sometimes estimated as the cause of the error instead of the step P2 with the largest abnormality.
(實施例2之效果) 於實施例2中,具有複數個算出步驟別之異常度之機構,計算將其等複合後之異常度。藉此,可於錯誤原因步驟之推定使用多角度之資訊,可藉由減少錯誤之特徵之遺漏而提高推定精度。 實施例3 (Effect of Example 2) In Example 2, there are multiple mechanisms for calculating the abnormality of each step, and the abnormality after the combination of them is calculated. In this way, information from multiple angles can be used in the estimation of the error cause step, and the estimation accuracy can be improved by reducing the omission of error characteristics. Example 3
接著,參照圖9及圖10,說明實施例3之錯誤因素解析裝置3。另,與實施例1之共通點省略重複說明。Next, the error factor analysis device 3 of the third embodiment will be described with reference to Fig. 9 and Fig. 10. In addition, the common points with the first embodiment will be omitted from repeated description.
自圖3與圖9之比較可知,實施例3之錯誤因素解析裝置3與實施例1不同,具備步驟別錯誤因素推定部39、錯誤辭典3A、錯誤因素概率修正部3B。以下,依次說明該等之細節。As can be seen from the comparison between Fig. 3 and Fig. 9, the error factor analysis device 3 of the third embodiment is different from the first embodiment and includes a step error factor estimation unit 39, an error dictionary 3A, and an error factor probability correction unit 3B. The details of these are described in turn below.
(步驟別錯誤因素推定部39) 步驟別錯誤因素推定部39使用與錯誤相關計算部33所計算之錯誤相關度較高之特徵量或其值、相關度等,自錯誤辭典3A檢索類似度較高之項目,將檢索到之錯誤因素或該類似度作為錯誤因素概率D2,按步驟別取得1個以上。作為該類似度之計算方法,例如可使用協調過濾或排序學習之推定法。 (Step-by-step error factor estimation unit 39) The step-by-step error factor estimation unit 39 uses the feature quantity or its value, correlation, etc. with a high error correlation calculated by the error correlation calculation unit 33 to retrieve items with a high similarity from the error dictionary 3A, and uses the retrieved error factor or the similarity as the error factor probability D2, and obtains one or more of them according to the step. As a calculation method for the similarity, for example, a coordinated filtering or ranking learning estimation method can be used.
(錯誤資訊累積部3A) 錯誤辭典3A將特徵量或其值、相關度之組合、與該錯誤因素建立關聯而累積。作為該累積方法,可基於過去之技術訣竅將錯誤之特徵與其因素以表格形式等加以體系化,亦可預先儲存過去之錯誤資料與其錯誤因素。 (Error information accumulation section 3A) Error dictionary 3A accumulates the error information by associating the feature quantity or its value, the combination of correlation, and the error factor. As the accumulation method, the error features and their factors can be systematized in a table form based on past technical know-how, or past error data and their error factors can be stored in advance.
(錯誤因素概率修正部3B) 於錯誤因素概率修正部3B中,使用異常度記憶部35中記憶之步驟別之異常度,校正由步驟別錯誤因素推定部39計算出之步驟別之錯誤因素概率D2。於圖10顯示該校正方法之模式圖。 (Error factor probability correction unit 3B) In the error factor probability correction unit 3B, the step-specific abnormality stored in the abnormality storage unit 35 is used to correct the step-specific error factor probability D2 calculated by the step-specific error factor estimation unit 39. A schematic diagram of the correction method is shown in FIG10.
於圖10中,由步驟別錯誤因素推定部39計算出之錯誤因素與其錯誤概率按步驟別取得上階前3個。以異常度記憶部35中記憶之步驟別之異常度校正該錯誤概率,將校正後之錯誤概率為上階者與步驟編號一起作為錯誤因素推定結果D3而取得。作為該校正方法,例如可以[0.0-1.0]將異常度之值正規化並乘以錯誤概率,亦可算出使異常度為閾值以上之步驟變高、閾值以上之步驟變低之係數並乘以錯誤概率等。經由終端4向使用者提示如此獲得之錯誤因素推定結果D3。In FIG10 , the error factors and their error probabilities calculated by the step-by-step error factor estimation unit 39 are obtained as the top three of the step-by-step. The error probability is corrected by the abnormality of the step-by-step stored in the abnormality storage unit 35, and the error probability of the upper level after correction is obtained together with the step number as the error factor estimation result D3. As a correction method, for example, the value of the abnormality can be normalized to [0.0-1.0] and multiplied by the error probability, or a coefficient that makes the step with an abnormality above the threshold higher and the step with an abnormality above the threshold lower can be calculated and multiplied by the error probability, etc. The error factor estimation result D3 thus obtained is prompted to the user via the terminal 4.
(實施例3之效果) 於實施例3中,可藉由以每個步驟之異常度校正按每個步驟求出之錯誤因素之推定概率,推定與每個步驟之異常度對應之錯誤因素。藉此,即使於因複數個步驟之相互作用而產生錯誤之實例中,亦可選取各個步驟中之錯誤因素並向使用者提示。 (Effect of Example 3) In Example 3, the error factor corresponding to the abnormality of each step can be estimated by correcting the estimated probability of the error factor obtained for each step with the abnormality of each step. In this way, even in an example where an error occurs due to the interaction of multiple steps, the error factor in each step can be selected and prompted to the user.
(變化例) 本揭示並非限定於上述實施形態者,包含各種變化例。例如,上述實施形態係為了容易理解地說明本揭示而詳細說明者,未必具備說明之全部構成。又,可將某實施形態之一部分置換為其他實施形態之構成。又,亦可對某實施形態之構成添加其他實施形態之構成。又,對各實施形態之構成之一部分,亦可追加、刪除或置換其他實施形態之構成之一部分。 (Variations) This disclosure is not limited to the above-mentioned embodiments, and includes various variations. For example, the above-mentioned embodiments are described in detail to explain this disclosure in an easy-to-understand manner, and may not have all the structures described. In addition, a part of a certain embodiment may be replaced with the structure of another embodiment. In addition, the structure of another embodiment may be added to the structure of a certain embodiment. In addition, for a part of the structure of each embodiment, a part of the structure of another embodiment may be added, deleted, or replaced.
例如,於上述實施例1~3中,雖對推定半導體檢查裝置1之錯誤因素之例進行了說明,但亦可推定於半導體檢查裝置1以外之機器產生之錯誤之錯誤因素。For example, in the above-mentioned embodiments 1 to 3, although the example of estimating the error factor of the semiconductor inspection apparatus 1 is described, the error factor of an error generated in a device other than the semiconductor inspection apparatus 1 may also be estimated.
又,於上述實施例2中,雖作為步驟別之異常度之計算機構使用特徵量基礎之異常度與匹配分數基礎之異常度之2個,但亦可使用該2個以外之3個以上之異常度之計算機構。Furthermore, in the above-mentioned embodiment 2, although two abnormalities, namely, the abnormality based on the feature quantity and the abnormality based on the matching score, are used as the abnormality calculation mechanism for each step, a calculation mechanism for three or more abnormalities other than the two abnormalities may also be used.
又,於上述實施例3中,構成為於實施例1之形態附加步驟別錯誤因素推定部39、錯誤辭典3A、錯誤因素概率修正部3B,但亦可構成為於實施例2之形態附加該等。Furthermore, in the above-mentioned embodiment 3, the error factor estimation unit 39, the error dictionary 3A, and the error factor probability correction unit 3B are added to the form of embodiment 1, but it can also be configured to add these to the form of embodiment 2.
又,於上述實施例3中,亦可於錯誤辭典3A所累積之資訊包含配方修正案,作為以錯誤因素推定結果D3向使用者提示之資訊,合併錯誤因素與配方修正案而進行提示。Furthermore, in the above-mentioned embodiment 3, the information accumulated in the error dictionary 3A may include a recipe correction as information to be presented to the user with the error factor estimation result D3, and the error factor and the recipe correction may be presented together.
1:半導體檢查裝置 2:資料庫 3:錯誤因素解析裝置 3A:錯誤辭典 3B:錯誤因素概率修正部 4:終端 31:步驟別資料選取部 32:錯誤標籤賦予部 33:錯誤相關計算部 33a:特徵量產生部 33b:錯誤分類模型學習部 33c:模型解析部 34:異常度計算部 34a:特徵量選取部 34b:異常度計算部 35:異常度記憶部 36:異常步驟推定部 37:匹配分數基礎之異常度計算部 38:綜合異常度計算部 39:步驟別錯誤因素推定部 100:資訊處理系統 D1:異常步驟推定結果 D2:錯誤因素概率 D3:錯誤因素推定結果 N:網路 P1~P5:步驟 S1~S9:步驟 1: Semiconductor inspection device 2: Database 3: Error factor analysis device 3A: Error dictionary 3B: Error factor probability correction unit 4: Terminal 31: Step data selection unit 32: Error label assignment unit 33: Error correlation calculation unit 33a: Feature generation unit 33b: Error classification model learning unit 33c: Model analysis unit 34: Abnormality calculation unit 34a: Feature selection unit 34b: Abnormality calculation unit 35: Abnormality storage unit 36: Abnormal step estimation unit 37: Abnormality calculation unit based on matching score 38: Comprehensive abnormality calculation unit 39: Step-by-step error factor estimation unit 100: Information processing system D1: Abnormal step estimation result D2: Error factor probability D3: Error factor estimation result N: Network P1~P5: Step S1~S9: Step
圖1係顯示實施例1之資訊處理系統之構成例之概略圖。 圖2係半導體檢查裝置之檢查步驟之一例。 圖3係實施例1之錯誤因素解析裝置之功能方塊圖。 圖4係實施例1之錯誤因素解析裝置之處理流程圖。 圖5係賦予錯誤標籤之步驟別資料之一例。 圖6係顯示於終端之解析結果之一例。 圖7係實施例2之錯誤因素解析裝置之功能方塊圖。 圖8係用於說明實施例2之綜合異常度之計算方法之模式圖。 圖9係實施例3之錯誤因素解析裝置之功能方塊圖。 圖10係用於說明實施例3之錯誤因素推定結果之計算方法之模式圖。 FIG. 1 is a schematic diagram showing an example of the configuration of an information processing system of Embodiment 1. FIG. 2 is an example of an inspection step of a semiconductor inspection device. FIG. 3 is a functional block diagram of an error factor analysis device of Embodiment 1. FIG. 4 is a processing flow chart of an error factor analysis device of Embodiment 1. FIG. 5 is an example of step-specific data assigned an error label. FIG. 6 is an example of an analysis result displayed at a terminal. FIG. 7 is a functional block diagram of an error factor analysis device of Embodiment 2. FIG. 8 is a schematic diagram for explaining a method for calculating a comprehensive abnormality of Embodiment 2. FIG. 9 is a functional block diagram of an error factor analysis device of Embodiment 3. FIG10 is a schematic diagram for explaining the calculation method of the error factor estimation result of Example 3.
2:資料庫 2: Database
3:錯誤因素解析裝置 3: Error factor analysis device
31:步驟別資料選取部 31: Step data selection section
32:錯誤標籤賦予部 32: Error labeling department
33:錯誤相關計算部 33: Error related calculation department
33a:特徵量產生部 33a: Feature mass production department
33b:錯誤分類模型學習部 33b: Error classification model learning department
33c:模型解析部 33c: Model analysis department
34:異常度計算部 34: Abnormality calculation department
34a:特徵量選取部 34a: Feature selection section
34b:特徵量基礎計算部 34b: Feature quantity basic calculation unit
35:異常度記憶部 35: Abnormal Memory Department
36:異常步驟推定部 36: Abnormal step estimation department
D1:異常步驟推定結果 D1: Abnormal step inference results
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