TW202421843A - Plating method and plating apparatus - Google Patents

Abstract

[Topic] The purpose is to improve the particle removal performance after plating treatment. [Solution] A coating treatment method according to an embodiment of the present disclosure includes: a coating treatment process of supplying a coating liquid to a substrate to form a coating film on the surface of the substrate; an oxidation-promoting liquid supply process of supplying an oxidation-promoting liquid to the substrate to oxidize metal residues on the surface of the substrate generated during the coating treatment process; an intermediate drying process of drying the substrate after the oxidation-promoting liquid supply process to promote oxidation of the metal residues; an alkaline liquid supply process of supplying an alkaline liquid to the substrate after the intermediate drying process to remove the oxidized metal residues; a rinsing process of supplying a rinsing liquid to the substrate after the alkaline liquid supply process to remove the alkaline liquid from the substrate; and a final drying process of drying the substrate after the rinsing process.

Description

Plating treatment method and plating treatment device

The present disclosure relates to a plating treatment method and a plating treatment apparatus.

In the manufacturing process of semiconductor devices, wiring materials are buried in wiring recesses provided on the surface of a substrate such as a semiconductor wafer by electroless plating. When the electroless plating process is performed, metal residues are inevitably left. Patent document 1 states that in order to remove the metal residues, after the electroless plating process, a post-cleaning process of spraying a post-cleaning liquid onto the substrate in a mist form, a pure water rinsing process, and a spin drying process are performed. As the post-cleaning liquid, an alkaline liquid containing TMAH with a pH of about 7 to 12, an organic acid with a pH of 2 to 5 containing a surfactant, and pure water with a pH of 6 to 8 can be used. [Prior art literature] [Patent literature]

[Patent Document 1] Japanese Patent Application Publication No. 2007-250915

[The problem that the invention is trying to solve]

This disclosure provides a technology for improving the performance of particle removal after plating treatment. [Means for Solving the Problem]

The coating treatment method of one embodiment of the present disclosure includes: a coating treatment process of supplying a coating liquid to a substrate to form a coating film on the surface of the substrate; an oxidation-promoting liquid supply process of supplying an oxidation-promoting liquid to the substrate to oxidize the metal residue on the surface of the substrate generated in the coating treatment process; an intermediate drying process of drying the substrate after the oxidation-promoting liquid supply process to promote the oxidation of the metal residue; an alkaline liquid supply process of supplying an alkaline liquid to the substrate after the intermediate drying process to remove the oxidized metal residue; a rinsing process of supplying a rinsing liquid to the substrate after the alkaline liquid supply process to remove the alkaline liquid from the substrate; and a final drying process of drying the substrate after the rinsing process. [Effect of the invention]

According to the above-mentioned implementation method of the present disclosure, the particle removal performance after plating treatment can be improved.

The specific implementation of the present disclosure is explained with reference to the attached drawings. The following implementation is only an example of a substrate liquid processing method and a substrate liquid processing device that embodies the technical idea of the present disclosure, and does not limit the technical idea of the present disclosure. Each element shown in each figure is simplified. The size and shape of each element in each figure and the size ratio between the elements are not necessarily consistent with the corresponding elements of the actual device, and are not necessarily consistent between the figures.

Fig. 1 is a diagram showing a schematic configuration example of a multi-layer wiring forming system 1. In Fig. 1, the X-axis, Y-axis, and Z-axis are orthogonal to each other, the X-axis and the Y-axis extend horizontally, and the positive direction of the Z-axis is the vertical upward direction.

The multi-layer wiring forming system (substrate liquid processing system) 1 shown in FIG. 1 includes a loading/unloading station 2, a processing station 3, and a control device 4.

The loading/unloading station 2 includes a carrier loading unit 11 and a first conveying unit 12. The carrier loading unit 11 carries a plurality of carriers C, each of which supports one or more wafers W in a horizontal state. The first conveying unit 12 is disposed adjacent to the carrier loading unit 11 and includes a first substrate conveying device 13 and a transfer unit 14.

The first substrate transport device 13 transports the wafer W between each carrier C and the handover portion 14. The first substrate transport device 13 of this example can move the wafer W in the horizontal direction and the vertical direction while holding the wafer W, and can rotate (rotate) the wafer W around the vertical axis. The handover portion 14 temporarily supports the wafer W received from the first substrate transport device 13, or temporarily supports the wafer W that is pre-directed to be handed over to the first substrate transport device 13. The wafer W handed over from the handover portion 14 to the first substrate transport device 13 is returned from the first substrate transport device 13 to the corresponding carrier C.

The processing station 3 is provided at a position adjacent to the carry-in/carry-out station 2 (particularly, the first conveying unit 12 ) in the X direction, and includes a second conveying unit 15 and a plurality of processing units 16 .

The second conveying section 15 has a second substrate conveying device 20 that can move on a conveying path. The second substrate conveying device 20 can move the wafer W in the horizontal direction and the vertical direction, and can rotate (spin) the wafer W around the vertical axis. The second conveying section 15 conveys the wafer W received from the delivery section 14 to a desired processing unit 16, conveys the wafer W between the processing units 16, or conveys the wafer W from the processing unit 16 to the delivery section 14.

The processing stations 3 include a plurality of processing units 16 arranged on both sides of a transport path (a transport path extending in the X direction in the example shown in FIG. 1 ) of the second substrate transport device 20. The configuration and number of the processing units 16 are not limited to the example shown in FIG. 1 , and any number of processing units 16 may be configured in any configuration.

The processing performed in each processing unit 16 is basically not limited, but at least one processing unit 16 is provided as an electroless plating processing unit (substrate liquid processing device) 17. The electroless plating processing unit 17 performs electroless plating processing on the wafer W as described later. At least one processing unit 16 can also be provided as a back sputtering unit 18 used in the first modified example (FIGS. 4A to 4E) described later.

As an example, the multiple processing units 16 included in the processing station 3 may include multiple electroless plating processing units 17, multiple CMP processing units, multiple thermal processing units, and multiple cleaning processing units. The CMP (chemical mechanical polishing) processing unit performs CMP processing on the wafer W. The thermal processing unit performs a predetermined thermal treatment on the wafer W. The cleaning processing unit performs cleaning processing on the wafer W, for example, including a rotary cleaning type cleaning device.

The control device 4 is, for example, a computer, and has a control unit 21 and a memory unit 22. The control unit 21 includes a microcomputer or various circuits having a CPU (central processing unit), a ROM (read-only memory), a RAM (random access memory), an input/output port, etc. The CPU of the microcomputer reads and executes the program stored in the ROM to control the first conveying unit 12, the second conveying unit 15, and each processing unit 16 (including the electroless plating processing unit 17).

The program stored in the memory unit 22 of the control device 4 may be recorded in a computer-readable storage medium and installed from the storage medium into the memory unit 22. Examples of computer-readable storage media include hard disks (HD), floppy disks (FD), compact disks (CD), magneto-optical disks (MO), and memory cards. The memory unit 22 may be implemented by, for example, semiconductor memory elements such as RAM and flash memory, and storage devices such as hard disks and optical disks.

[Electroless plating treatment unit] Fig. 2 is a diagram showing a configuration example of the electroless plating treatment unit (plating treatment device) 17. Fig. 2 transparently shows the configuration of the inner side of the housing 30.

The electroless plating processing unit 17 shown in FIG. 2 is composed of a single-wafer processing unit 16 for processing wafers W one by one, and includes a housing 30 , a substrate rotation holding mechanism 31 at least partly disposed inside the housing 30 , a processing liquid supply mechanism 32 , and a cup 33 .

The housing 30 has an open/close type carry-in/carry-out section (not shown). The wafer W carried by the second substrate carrying device 20 (see FIG. 1 ) is carried into the inner side of the housing 30 through the carry-in/carry-out section in an open state, and is carried out from the inner side of the housing 30 through the carry-in/carry-out section in an open state. On the other hand, during the period when the wafer W is subjected to various processes (including electroless plating process) inside the housing 30 and during the period when no process is performed inside the housing 30, the carry-in/carry-out section is in a closed state, thereby restricting the inflow of external air into the inner side of the housing 30.

The substrate rotation holding mechanism 31 is configured to hold the wafer W and can rotate simultaneously with the wafer W. The substrate rotation holding mechanism 31 has a hollow cylindrical rotation shaft 31a, a turntable 31b, a wafer suction cup 31c, and a first rotation drive unit (not shown). The turntable 31b and the wafer suction cup 31c constitute a substrate holder. The rotation shaft 31a changes its length in the up-and-down direction on the inner side of the housing 30 by a second lifting mechanism (not shown) driven under the control of the control device 4 (refer to FIG. 1). The turntable 31b is mounted on the upper end portion of the rotation shaft 31a. The wafer suction cup 31c is arranged on the outer periphery of the upper surface of the turntable 31b to support the wafer W. By changing the vertical length of the rotating shaft 31a, the height position (vertical position) of the turntable 31b and the wafer chuck 31c can be changed integrally. The first rotating drive unit transmits the rotational force from a driving source such as a motor to the rotating shaft 31a, so that the rotating shaft 31a, the turntable 31b and the wafer chuck 31c rotate integrally.

The substrate rotation holding mechanism 31 is driven under the control of the control device 4 (see FIG. 1 ), and the rotation shaft 31a, the turntable 31b, and the wafer chuck 31c are rotated by the rotational force transmitted from the first rotation driving unit, thereby rotating the wafer W supported by the wafer chuck 31c.

The processing liquid supply mechanism 32 is driven under the control of the control device 4 (see FIG. 1 ) to supply the processing liquid (e.g., electroless plating liquid) to the surface of the wafer W held by the substrate rotation holding mechanism 31. The processing liquid supply mechanism 32 of this example includes a processing liquid supply portion 32a, a discharge head 32b, a discharge nozzle 32c, an arm 32d, a support shaft 32e, and a processing liquid supply path 32f.

The processing liquid supply portion 32a supplies the processing liquid to the discharge head 32b via the processing liquid supply path 32f. The processing liquid supplied to the discharge head 32b is discharged, for example, from the discharge nozzle 32c installed on the discharge head 32b, and applied to the processing surface (upper surface) of the wafer W. The discharge head 32b and the discharge nozzle 32c are installed at the front end of the arm 32d and move integrally with the arm 32d. The arm 32d is supported by the support shaft 32e so as to be able to move up and down, and is arranged so that the inner side of the housing 30 can move in the up and down direction. In addition, the arm 32d is arranged to rotate (rotate) integrally with the support shaft 32e and move in the horizontal direction. The support shaft 32e is rotated around a central axis extending in the vertical direction by a second rotation driving portion (not shown).

With the processing liquid supply mechanism 32 configured as described above, the processing liquid can be discharged to any position on the processing surface (upper surface) of the wafer W from the discharge nozzle 32 c located at a desired height.

The cup 33 has two discharge ports 33a and 33b arranged at different positions in the vertical direction, and receives the processing liquid scattered from the wafer W. The cup 33 is configured to be movable in the vertical direction by a second lifting mechanism (not shown) driven under the control of the control device 4 (see FIG. 1 ), and the height positions of the two discharge ports 33a and 33b are variable. The two discharge ports 33a and 33b are connected to liquid discharge mechanisms 34 and 35, respectively.

The liquid discharge mechanisms 34 and 35 discharge the processing liquid accumulated in the two discharge ports 33a and 33b to the outside of the housing 30.

The liquid discharge mechanism 34 has a recovery flow path 34b and a waste liquid flow path 34c connected to the discharge port 33a via a flow path switcher 34a. The flow path switcher 34a switches between the recovery flow path 34b and the waste flow path 34c so that the process liquid can flow in from one discharge port 33a. The recovery flow path 34b is a flow path for reusing the process liquid recovered from one discharge port 33a, and a cooling buffer 34d is provided for cooling the process liquid. The waste flow path 34c is a flow path for discarding the process liquid recovered from one discharge port 33a.

The liquid discharge mechanism 35 has a waste liquid flow path 35a connected to the other discharge port 33b. The waste flow path 35a is a flow path for disposing of the processing liquid recovered from the other discharge port 33b.

The processing liquid supply unit 32a is configured to supply the electroless plating liquid and other processing liquids (e.g., alkaline liquid, oxidizing liquid, rinsing liquid, etc., described later) as processing liquids to the discharge head 32b and the discharge nozzle 32c. Thus, the processing liquid supply mechanism 32 can perform a cleaning process using a cleaning liquid, a rinsing process using a rinsing liquid, or other liquid treatments on the wafer W before or after the electroless plating liquid is applied to the wafer W.

2, the processing liquid supply mechanism 32 is simply shown, showing one processing liquid supply portion 32a, one processing liquid supply path 32f, one discharge head 32b and one discharge nozzle 32c. However, the number and structure of the processing liquid supply portion 32a, the processing liquid supply path 32f, the discharge head 32b and the discharge nozzle 32c are not limited.

For example, a plurality of processing liquid supply parts 32a, processing liquid supply paths 32f, discharging heads 32b and/or discharging nozzles 32c may be provided. In this case, for example, a dedicated processing liquid supply part 32a, processing liquid supply path 32f, discharging head 32b and/or discharging nozzle 32c may be provided for each of the plurality of processing liquids supplied from the processing liquid supply mechanism 32 to the wafer W. Alternatively, a dedicated processing liquid supply part 32a, processing liquid supply path 32f, discharging head 32b and/or discharging nozzle 32c may be provided only for one or more specific types of processing liquids. In this case, for other kinds of processing liquids, the processing liquid supply portion 32a, the processing liquid supply path 32f, the discharge head 32b and/or the discharge nozzle 32c are shared.

Next, the processing of the wafer W in the electroless plating processing unit is described. If necessary, appropriate pre-processing is performed on the wafer W with the recessed portion formed therein. The pre-processing mentioned here can be a process that can be performed before the plating process, and can be any known process such as silane coupling process and seed layer formation process that is performed as needed.

[Plating process] After that, while the wafer W held by the substrate rotation holding mechanism 31 is rotated around the vertical axis, a plating liquid of, for example, about 80°C is ejected from the ejection nozzle 32c for ejecting the plating liquid toward the center of the wafer W. The plating liquid flows while diffusing on the surface of the wafer W toward the periphery in a manner covering the entire surface of the wafer W. Thus, a plating layer is formed on the surface of the wafer W (for example, from the bottom to the top from the bottom of the concave portion of the pattern) by electroless plating. The location where the plating layer is formed depends on the surface state of the wafer W after the previous treatment.

[Alkaline solution supply process] Next, while the wafer W continues to rotate, the supply of the plating liquid is stopped, and the alkaline solution (ALK) is supplied to the center of the wafer W from the discharge nozzle 32c for discharging the alkaline solution. As the alkaline solution, for example, DIW can be mixed with TMAH (tetramethylammonium hydroxide) as a pH adjuster to adjust the pH to about 8 to 14. As a result, the plating liquid and reaction products remaining on the surface of the wafer W are removed. At this time, as shown in FIG. 3(A), for example, granular metal residue M is attached to the surface of the wafer W or the surface of the plating layer.

[Oxidizing liquid supply process] Next, while the wafer W continues to rotate, the supply of the alkaline solution is stopped, and the oxidizing liquid is supplied to the center of the wafer W from the discharge nozzle 32c for discharging the oxidizing liquid. As the oxidizing agent, DIW (pure water) or a mixture of TMAH (tetramethylammonium hydroxide) as a pH adjuster and hydrogen peroxide to adjust the pH to about 6 to 7 can be used. The surface of the metal residue M remaining on the surface of the wafer W is oxidized by the oxidizing liquid (to form MO _x : (refer to FIG. 3 (B))), and the alkaline solution remaining on the surface of the wafer W is removed.

[Intermediate drying process] Next, while continuing to rotate the wafer W (preferably increasing the rotation speed of the wafer W), the supply of the oxidation-promoting liquid is stopped. That is, the wafer W is subjected to rotation drying (shake-off drying). Thereby, the oxidation-promoting liquid remaining on the surface of the wafer W is scattered toward the outside of the wafer W due to the centrifugal force and is removed from the surface, and the surface of the wafer W is exposed to the air surrounding the wafer W as an oxidizing atmosphere. As a result, the oxidation of the metal residue remaining on the surface of the wafer W further proceeds (growth of MO _x : (refer to FIG. 3C )).

[Alkaline solution supply process] Next, while the wafer W continues to rotate (the rotation speed of the wafer W returns to the original speed), alkaline solution is supplied to the center of the wafer W from the discharge nozzle 32c for discharging the alkaline solution. As the alkaline solution, the same alkaline solution as that used in the first alkaline solution supply process can be used. As a result, the oxidized portion (MO _x ) in the metal residue, especially near the surface, is dissolved in the alkaline solution, and the metal residue is peeled off from the surface of the wafer W (refer to FIG. 3 (D)). The separated metal residue is washed off from the surface of the wafer W by the alkaline solution.

[Rinsing process] Next, while the wafer W continues to rotate, the supply of the alkaline solution is stopped, and DIW as a rinse liquid is supplied to the center of the wafer W from the discharge nozzle 32c for discharging the oxidation-promoting liquid. That is, the wafer W is subjected to a DIW rinse process. As a result, the alkaline solution remaining on the surface of the wafer W is removed.

[Final drying process] Next, the supply of the rinsing liquid is stopped while the wafer W continues to rotate (preferably at an increased rotation speed). That is, the wafer W is subjected to rotation drying (shake-off drying). As a result, the rinsing liquid remaining on the surface of the wafer W is scattered toward the outside of the wafer W by centrifugal force and removed from the surface, and the surface of the wafer W is dried. Through the above process, the plating process of a wafer W is completed.

The above implementation can be modified as follows.

In the plating process consisting of the above series of processes, the initial alkaline solution supply process may not be performed, and the oxidation-promoting solution supply process may be performed after the plating process. This is because after the surface of the metal residue is oxidized to a certain extent, the alkaline solution becomes more effective in removing the metal residue. However, due to the adjustment of the zeta potential in the initial alkaline solution supply process, it is sometimes possible to prevent particulate matter floating in the plating solution (which still exists in the early stage of the alkaline solution supply process) from adhering to the wafer W at the end of the plating process. Therefore, whether to perform the initial alkaline solution supply process can be determined based on how much of an expected effect the adjustment of the zeta potential can produce.

After the initial alkaline solution supply process (after the plating process if the initial alkaline solution supply process is skipped), the oxidation-promoting solution supply process, intermediate drying process, and alkaline solution supply process can be repeated several times, and then the rinsing process and the final drying process can be performed. Metal residues that are difficult to remove can also be removed by repeating oxidation and alkali treatment.

In one embodiment, all processes except the plating process are room temperature processes, but not limited to this.

The intermediate drying process can be performed while blowing air toward the surface of the rotating wafer W.

Instead of the shake-off drying, an intermediate drying process may be performed by scanning the surface of the wafer W using a discharge nozzle such as an air knife that discharges air in a belt shape. The final drying process may also be performed in the same manner as the intermediate drying process.

[Experiment 1] The following describes the experimental results used to confirm the effect of the implementation method. Four processing conditions were set, and two wafers W were processed under each processing condition. Processing condition 1: Electroless Cu plating process → DIW rinsing process → Rotary drying process Processing condition 2: Electroless Cu plating process → Alkaline solution supply process (15 seconds) → DIW rinsing process (15 seconds) → Rotary drying process Processing condition 3: Electroless Cu plating process → Alkaline solution supply process (90 seconds) → DIW rinsing process (15 seconds) → Rotary drying process Processing condition 4: Electroless Cu plating process → Alkaline solution supply process (15 seconds) → "DIW rinsing process (15 seconds) → Rotary drying process (intermediate drying process) → Alkaline solution supply process (15 seconds)" × 6 times → DIW rinsing (15 seconds) → Rotary drying process (final drying process)

The number of particles with a size of 60 nm or more remaining on the surface of the wafer W after treatment (average of N=2) is as follows. Treatment condition 1: 922 Treatment condition 2: 622 Treatment condition 3: 331 Treatment condition 4: 153

As can be seen from the above, the number of particles can be significantly reduced by repeating DIW rinsing (15 seconds) → spin drying → alkaline solution treatment (15 seconds).

[Experiment 2] Four treatment conditions were set for the test piece on which a Cu film was formed on the surface by PVD treatment, and the experiment was conducted to investigate the amount of reduction in the thickness of the Cu film after treatment under each treatment condition. Processing condition 1: DIW rinsing process → spin drying process Processing condition 2: Alkaline liquid supply process (15 seconds) → DIW rinsing process (15 seconds) → spin drying process Processing condition 3: Alkaline liquid supply process (90 seconds) → DIW rinsing process (15 seconds) → spin drying process Processing condition 4: Alkaline liquid supply process (15 seconds) → "DIW rinsing process (15 seconds) → spin drying process (intermediate drying process) → alkaline liquid supply process (15 seconds)" × 6 times → DIW rinsing process (15 seconds) → spin drying process (final drying process)

The experimental results are as follows. Processing condition 1: ±0 (baseline value) Processing condition 2: -0.31nm Processing condition 3: -1.04nm Processing condition 4: -1.86nm

From the above, it can be seen that the surface of the Cu film is oxidized by DIW rinsing and spin drying, and most of the surface of the Cu film can be scraped off by treating with an alkaline solution. In other words, it can be seen that after DIW rinsing and spin drying, the metal residue from Cu plating can be effectively removed by treating with an alkaline solution.

From the processing condition 4 of the above experiment 2, it can be seen that the thickness of the surface oxide layer formed after one rinsing process (DIW rinsing process) and one intermediate drying process is about 0.3nm. As for the oxidizing properties of the processing fluid exposed on the surface of the wafer W in the rinsing process (here, pure water that has dissolved oxygen in the air after being spit out) and the processing fluid exposed on the surface of the wafer W in the intermediate drying process (here, air), it is sufficient as long as it can form a surface oxide layer of approximately this thickness. This is because using a processing fluid with too high oxidizing properties will cause excessive damage to the coating layer.

The coating layer formed by the coating process is, for example, a Cu coating layer. However, the material of the coating layer is not limited to Cu, and can be any metal as long as it can be oxidized by a relatively weakly oxidizing fluid such as DIW and air to form an oxide, and the oxide can be easily dissolved by an alkaline solution. Examples of such metals include Co, Ru, Mo, and Ni.

The embodiments disclosed this time should be considered as illustrative and not restrictive in all aspects. Without departing from the scope of the attached patent application and its gist, the above embodiments can be omitted, replaced or changed in various forms.

The substrate is not limited to a semiconductor wafer, but may be other types of substrates used in the manufacture of semiconductor devices such as a glass substrate or a ceramic substrate.

1: Multi-layer wiring formation system (substrate liquid processing system) 2: Loading/unloading station 3: Processing station 4: Control device 11: Carrier loading unit 12: First conveying unit 13: First substrate conveying device 14: Handover unit 15: Second conveying unit 16: Processing unit 17: Electroless plating processing unit 18: Back sputtering unit 20: Second substrate conveying device 21: Control unit 22: Memory unit C: Carrier W: Wafer

[FIG. 1] is a schematic cross-sectional view of a substrate processing system in one embodiment of a substrate processing device. [FIG. 2] is a schematic longitudinal cross-sectional view showing a configuration example of an electroless plating processing unit. [FIG. 3] is a schematic diagram illustrating a metal slag removal mechanism.

W: Wafer

M:Metal slag

DIW: pure water

ALK: Alkaline solution

AIR: Air

MO _x : Oxidation part

Claims (8)

A plating treatment method includes: a plating treatment process of supplying a plating liquid to a substrate to form a plating film on the surface of the substrate; an oxidation-promoting liquid supply process of supplying an oxidation-promoting liquid to the substrate to oxidize the metal residue on the surface of the substrate generated in the plating treatment process; an intermediate drying process of drying the substrate after the oxidation-promoting liquid supply process to promote the oxidation of the metal residue; an alkaline liquid supply process of supplying an alkaline solution to the substrate after the intermediate drying process to remove the oxidized metal residue; a rinsing process of supplying a rinsing liquid to the substrate after the alkaline liquid supply process to remove the alkaline liquid from the substrate; and a final drying process of drying the substrate after the rinsing process. The coating treatment method of claim 1, wherein between the coating treatment process and the rinsing process, the oxidation promoting liquid supply process, the intermediate drying process, and the alkaline liquid supply process are repeated at least twice in this order. The coating treatment method of claim 1, wherein the oxidation-promoting liquid is pure water. The coating treatment method of claim 1, wherein the oxidation-promoting liquid is a mixture of hydrogen peroxide and an alkaline pH adjuster. The coating treatment method of claim 1, wherein the intermediate drying process is performed by rotary drying. A coating treatment method as claimed in claim 1, wherein during the intermediate drying process, air is blown onto the surface of the substrate. The plating treatment method of claim 1, wherein it also includes: after the plating treatment process and before the oxidation-promoting liquid supply process, the process of supplying an alkaline solution to the substrate. A plating treatment device comprises: a substrate holding portion for holding a substrate; a treatment liquid supply mechanism for supplying treatment liquid necessary for plating treatment to the substrate held by the substrate holding portion; and a control portion for controlling the operation of the plating treatment device so as to perform a plating treatment method as described in any one of claims 1 to 7.

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