TW202327404A - Focus ring temperature control component, base and plasma processing equipment capable of realizing more accurate and precise temperature control for focus ring and achieving more reliable safety - Google Patents
Focus ring temperature control component, base and plasma processing equipment capable of realizing more accurate and precise temperature control for focus ring and achieving more reliable safety Download PDFInfo
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- TW202327404A TW202327404A TW111135855A TW111135855A TW202327404A TW 202327404 A TW202327404 A TW 202327404A TW 111135855 A TW111135855 A TW 111135855A TW 111135855 A TW111135855 A TW 111135855A TW 202327404 A TW202327404 A TW 202327404A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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Abstract
Description
本發明涉及半導體設備技術領域,特別涉及一種聚焦環溫控組件、基座及電漿處理設備。The invention relates to the technical field of semiconductor equipment, in particular to a focus ring temperature control component, a base and plasma processing equipment.
電容耦合電漿處理設備(CCP),是借助於射頻耦合放電產生電漿,進而利用電漿進行沉積、蝕刻等加工製程。Capacitively coupled plasma processing equipment (CCP) generates plasma by means of radio frequency coupling discharge, and then uses plasma for deposition, etching and other processing processes.
然而在電容耦合電漿處理設備中的蝕刻腔體中,不同的工序製程對聚焦環有不同的溫度要求。如圖1所示,電容耦合電漿處理設備包括反應腔,其底部設有一基座10,基座上設有靜電吸盤,環繞所述基座10設置的聚焦環50,邊緣環40,絕緣環20和接地環30;所述聚焦環50和所述邊緣環40位於所述絕緣環20和所述接地環(ground ring)30上方,靜電吸盤內部設置一靜電電極,用於產生靜電吸力,以實現在製程過程中對待處理基片的支撐固定。靜電吸盤下方設置加熱裝置,用於對製程過程中的基片溫度進行控制。所述聚焦環50和邊緣環40用於調節基片周圍的電場或溫度分佈,提高基片處理的均勻性。However, in the etching chamber of the capacitively coupled plasma processing equipment, different processes have different temperature requirements for the focus ring. As shown in Figure 1, the capacitively coupled plasma processing equipment includes a reaction chamber, the bottom of which is provided with a base 10, the base is provided with an electrostatic chuck, a focus ring 50 arranged around the base 10, an edge ring 40, an insulating ring 20 and ground ring 30; the focus ring 50 and the edge ring 40 are located above the insulating ring 20 and the ground ring (ground ring) 30, and an electrostatic electrode is arranged inside the electrostatic chuck for generating electrostatic attraction to Realize the support and fixation of the substrate to be processed during the process. A heating device is arranged under the electrostatic chuck to control the temperature of the substrate during the process. The focus ring 50 and the edge ring 40 are used to adjust the electric field or temperature distribution around the substrate to improve the uniformity of substrate processing.
在聚焦環50下面的邊緣環(陶瓷隔絕環,ceramic isolation ring)40下面放置薄膜鍍層加熱器60,對邊緣環40進行加熱,邊緣環40和靜電吸盤10之間放置第一導熱膠70,作為冷卻;在邊緣環40和聚焦環50之間放置第二導熱膠71,邊緣環40上的熱量通過第二導熱膠71傳遞到聚焦環50上,對聚焦環50的溫度進行調節。A film coating heater 60 is placed under the edge ring (ceramic isolation ring, ceramic isolation ring) 40 under the focus ring 50 to heat the edge ring 40, and a first thermally conductive adhesive 70 is placed between the edge ring 40 and the electrostatic chuck 10, as Cooling: place the second heat conduction glue 71 between the edge ring 40 and the focus ring 50, the heat on the edge ring 40 is transferred to the focus ring 50 through the second heat conduction glue 71, and the temperature of the focus ring 50 is adjusted.
然而,現有的技術僅考慮到如何提高聚焦環50的傳熱性能或保持其溫度恒定,但缺乏有效的手段能對聚焦環50的溫度進行進一步調整控制。請繼續參考圖1所示,在現有技術中,有直接在基座10的台階處上增加一圈加熱器,但導致對聚焦環的加熱設備無法單獨維護;也有在把邊緣環40做大,在接地環30上做一個送電通道61,但是由於接地環30寬度有限,與邊緣環之間很難做到非常好的密封性。且由於所述送電通道61的設置,若是由於較差的密封性讓反應腔內的電漿洩露到送電通道61中,使其暴露在電漿環境中,電漿遇到強電流容易引起爆炸。However, the existing technology only considers how to improve the heat transfer performance of the focus ring 50 or keep its temperature constant, but lacks effective means to further adjust and control the temperature of the focus ring 50 . Please continue to refer to FIG. 1. In the prior art, a circle of heaters is directly added to the steps of the base 10, but the heating equipment for the focus ring cannot be maintained separately; A power transmission channel 61 is made on the ground ring 30 , but due to the limited width of the ground ring 30 , it is difficult to achieve a very good seal between the ground ring 30 and the edge ring. Moreover, due to the setting of the power transmission channel 61, if the plasma in the reaction chamber leaks into the power transmission channel 61 due to poor sealing and is exposed to the plasma environment, the plasma is likely to explode when encountering a strong current.
本發明的目的在於提供一種聚焦環溫控組件、基座及電漿處理設備,實現對聚焦環的更準確精細的溫度控制,使其在蝕刻等處理中可調節,從而滿足更高的製程需求的目的。The purpose of the present invention is to provide a focus ring temperature control component, base and plasma processing equipment, to achieve more accurate and fine temperature control of the focus ring, so that it can be adjusted in etching and other treatments, so as to meet higher process requirements the goal of.
為了實現以上目的,本發明通過以下技術方案實現: 一種聚焦環溫控組件,其應用於電漿處理設備中,所述電漿處理設備包括:基座,環繞所述基座設置的絕緣環和聚焦環,所述聚焦環位於所述絕緣環上方;所述聚焦環溫控組件包括:邊緣環,其環繞所述基座設置,位於所述聚焦環和所述絕緣環之間;加熱組件,其設置在所述邊緣環上。法蘭,其設置在所述絕緣環和所述基座之間,位於所述加熱組件下方,所述法蘭內部設有電源通道。控溫線纜,其通過所述電源通道與所述加熱組件電連接,以通過所述加熱組件對所述聚焦環進行溫控。 In order to achieve the above object, the present invention is achieved through the following technical solutions: A focus ring temperature control assembly, which is used in plasma processing equipment, the plasma processing equipment includes: a base, an insulating ring and a focus ring arranged around the base, the focus ring is located above the insulating ring ; The focus ring temperature control assembly includes: an edge ring, which is arranged around the base, and is located between the focus ring and the insulating ring; a heating assembly, which is arranged on the edge ring. A flange, which is arranged between the insulating ring and the base, is located under the heating assembly, and a power channel is arranged inside the flange. A temperature control cable, which is electrically connected to the heating component through the power channel, so as to control the temperature of the focus ring through the heating component.
較佳地,所述加熱組件為厚膜電路加熱器,其設置在所述邊緣環和所述法蘭之間,與所述控溫電纜電連接。所述厚膜電路加熱器用於給所述邊緣環加熱,所述基座的冷卻通道用於給邊緣環降溫,以對邊緣環的溫度控制,所述邊緣環與所述聚焦環之間接觸進行熱傳導。Preferably, the heating component is a thick film circuit heater, which is arranged between the edge ring and the flange, and is electrically connected to the temperature control cable. The thick film circuit heater is used to heat the edge ring, the cooling channel of the base is used to cool the edge ring to control the temperature of the edge ring, and the contact between the edge ring and the focus ring is performed Heat Conduction.
較佳地,所述厚膜電路加熱器與所述法蘭之間密封設置。Preferably, the thick-film circuit heater is sealed with the flange.
較佳地,所述厚膜電路加熱器與所述法蘭之間的接觸面為密封面,其表面粗糙度Ra<0.4。Preferably, the contact surface between the thick film circuit heater and the flange is a sealing surface, and its surface roughness is Ra<0.4.
較佳地,還包括第一密封部件,其設置在所述厚膜電路加熱器與所述法蘭之間。Preferably, it further includes a first sealing member disposed between the thick film circuit heater and the flange.
較佳地,所述法蘭靠近所述厚膜電路加熱器的一端設有第一密封溝槽,所述第一密封部件位於所述第一密封溝槽內部。Preferably, one end of the flange close to the thick film circuit heater is provided with a first sealing groove, and the first sealing member is located inside the first sealing groove.
較佳地,所述邊緣環包括上下相對設置的第一邊緣環片和第二邊緣環片; 所述加熱組件為厚膜電路加熱器,其設置在所述第一邊緣環片和所述第二邊緣環片之間,與所述控溫電纜連線。所述厚膜電路加熱器用於給所述邊緣環加熱,所述基座的冷卻通道用於給邊緣環降溫,以對邊緣環進行溫度控制,所述邊緣環與所述聚焦環之間接觸進行熱傳導。 Preferably, the edge ring includes a first edge ring piece and a second edge ring piece arranged up and down oppositely; The heating component is a thick film circuit heater, which is arranged between the first edge ring piece and the second edge ring piece, and is connected with the temperature control cable. The thick film circuit heater is used to heat the edge ring, the cooling channel of the base is used to cool the edge ring to control the temperature of the edge ring, and the contact between the edge ring and the focus ring is performed Heat Conduction.
較佳地,所述第一邊緣環片和所述第二邊緣環片之間的拼接縫隙採用密封材料密封。Preferably, the splicing gap between the first edge ring piece and the second edge ring piece is sealed with a sealing material.
較佳地,所述第二邊緣環片與所述法蘭之間密封設置。Preferably, there is a sealing arrangement between the second edge ring piece and the flange.
較佳地,所述第二邊緣環片與所述法蘭之間的接觸面為密封面,其表面粗糙度Ra<0.4。Preferably, the contact surface between the second edge ring piece and the flange is a sealing surface, and its surface roughness is Ra<0.4.
較佳地,還包括第二密封部件,其設置在所述第二邊緣環片與所述法蘭之間。Preferably, it also includes a second sealing component, which is arranged between the second edge ring piece and the flange.
較佳地,所述法蘭靠近所述第二邊緣環片的一端設有第二密封溝槽,所述第二密封部件位於所述第二密封溝槽內部。Preferably, the end of the flange close to the second edge ring is provided with a second sealing groove, and the second sealing component is located inside the second sealing groove.
較佳地,所述法蘭分為多個相互密封連接的法蘭段。Preferably, the flange is divided into a plurality of flange segments that are sealed and connected to each other.
較佳地,所述法蘭段為兩個,記為第一法蘭段和第二法蘭段,所述第一法蘭段靠近所述加熱組件設置;所述第二法蘭段遠離所述加熱組件設置; 所述第一法蘭段內設有第一通道,所述第二法蘭段內設有第二通道,所述第一通道和所述第二通道相互貫通。 Preferably, there are two flange segments, denoted as a first flange segment and a second flange segment, the first flange segment is set close to the heating assembly; the second flange segment is far away from all The above heating element settings; A first passage is provided in the first flange section, a second passage is provided in the second flange section, and the first passage and the second passage communicate with each other.
所述第二通道向所述基座彎曲設置,且與所述基座底部中心的出口連通; 所述控溫線纜的一端貫穿所述第二通道和所述第一通道與所述加熱組件電連接,其另一端經所述基座底部中心的出口與外部控溫系統連通。 The second channel is bent toward the base and communicates with the outlet at the bottom center of the base; One end of the temperature control cable runs through the second channel and the first channel and is electrically connected to the heating assembly, and the other end communicates with an external temperature control system through an outlet at the bottom center of the base.
較佳地,還包括:第三密封部件,其設置在所述第一法蘭段和第二法蘭段之間。Preferably, it further includes: a third sealing component arranged between the first flange segment and the second flange segment.
較佳地,所述第一法蘭段和所述第二法蘭段之間的接觸面設有第三密封溝槽,所述第三密封部件設置在所述第三密封溝槽內部。Preferably, a third sealing groove is provided on the contact surface between the first flange segment and the second flange segment, and the third sealing component is arranged inside the third sealing groove.
較佳地,還包括:第四密封部件,其設置在所述第二法蘭段和所述基座側壁之間。Preferably, it further includes: a fourth sealing component, which is arranged between the second flange segment and the side wall of the base.
較佳地,所述第二法蘭段的側壁上設有環繞所述第二通道的第四密封溝槽,所述第四密封部件設置所述第四密封溝槽內。Preferably, a fourth sealing groove surrounding the second channel is provided on the side wall of the second flange section, and the fourth sealing member is disposed in the fourth sealing groove.
較佳地,所述法蘭為非金屬法蘭。Preferably, the flange is a non-metallic flange.
較佳地,所述法蘭的數量為多個,且沿所述基座的周向間隔設置。Preferably, the number of the flanges is multiple and arranged at intervals along the circumference of the base.
較佳地,所述絕緣環的周向間隔設置有多個安裝槽,每一所述安裝槽位於所述絕緣環和所述基座的側壁之間,所述法蘭一一對應設置在所述安裝槽內部,每一所述法蘭側壁與所述基座側壁接觸。Preferably, a plurality of mounting grooves are arranged at intervals in the circumferential direction of the insulating ring, and each of the mounting grooves is located between the insulating ring and the side wall of the base, and the flanges are arranged one by one on each of the mounting grooves. Inside the installation groove, each side wall of the flange is in contact with the side wall of the base.
較佳地,還包括:多個溫度感測器,每一所述溫度感測器通過對應的所述電源通道設置在所述加熱組件處,用於探測所述聚焦環的溫度。Preferably, it further includes: a plurality of temperature sensors, each of the temperature sensors is arranged at the heating assembly through the corresponding power supply channel, and is used for detecting the temperature of the focus ring.
較佳地,所述基座的邊緣上具有台階,所述邊緣環一部分搭在所述台階上,另一部分搭在所述法蘭上,所述台階的上表面上設置有第一導熱墊; 所述聚焦環和所述邊緣環之間設置有第二導熱墊。 Preferably, there is a step on the edge of the base, a part of the edge ring rests on the step, and another part rests on the flange, and a first thermal pad is provided on the upper surface of the step; A second heat conduction pad is arranged between the focus ring and the edge ring.
另一方面,本發明還提供一種基座,包括:如上文所述的聚焦環溫控組件。In another aspect, the present invention also provides a base, including: the focus ring temperature control assembly as described above.
再一方面,本發明還提供一種電漿處理設備,包括:反應腔,所述反應腔內設置一氣體噴淋頭和一與所述氣體噴淋頭相對設置的基座,所述基座為如上文所述的基座。In yet another aspect, the present invention also provides a plasma treatment device, comprising: a reaction chamber, a gas shower head and a base opposite to the gas shower head are arranged in the reaction chamber, and the base is base as above.
本發明至少具有以下優點之一: 本發明所提供的聚焦環溫控組件,通過設置在絕緣環和基座之間的法蘭,所述法蘭內部設有電源通道。控溫線纜,其通過所述電源通道與所述加熱組件電連接,以通過所述加熱組件對所述聚焦環進行溫控。由此可知,所述法蘭的設置電源通道的空間充足,解決了由於現有技術中的接地環空間有限,很難做到非常好的密封性,若是由此導致送電通道暴露在電漿環境中,電漿遇到強電流容易引起爆炸,導致的安全隱患問題。 The present invention has at least one of the following advantages: The temperature control assembly of the focus ring provided by the present invention uses a flange arranged between the insulating ring and the base, and a power channel is provided inside the flange. A temperature control cable, which is electrically connected to the heating component through the power channel, so as to control the temperature of the focus ring through the heating component. It can be seen that the flange has sufficient space for setting the power supply channel, which solves the problem that due to the limited space of the grounding ring in the prior art, it is difficult to achieve very good sealing. If this causes the power transmission channel to be exposed to the plasma environment , The plasma is prone to explosion when it encounters a strong current, resulting in potential safety hazards.
本發明所提供的所述加熱組件為厚膜電路加熱器,所述厚膜電路加熱器可以預先通過燒結製程燒結在所述邊緣環的下表面對應的位置上,以實現通過對所述邊緣環加熱進而實現對所述聚焦環加熱的目的,另外此由於製程成熟,可以降低製備成本。The heating assembly provided by the present invention is a thick-film circuit heater, and the thick-film circuit heater can be pre-sintered on the corresponding position of the lower surface of the edge ring through a sintering process, so as to achieve Heating further achieves the purpose of heating the focus ring, and because the manufacturing process is mature, the manufacturing cost can be reduced.
厚膜電路加熱器與所述法蘭之間密封設置,且其表面粗糙度Ra<0.4,由此進一步保證了將電源通道與真空環境隔開,提高了設備的安全性能。The thick-film circuit heater is sealed with the flange, and its surface roughness is Ra<0.4, thereby further ensuring that the power channel is separated from the vacuum environment and improving the safety performance of the equipment.
本發明通過設置在所述厚膜電路加熱器與所述法蘭之間的第一密封部件進而實現將電源通道與真空環境隔開的目的,進一步提高設備的安全性能。In the present invention, the purpose of isolating the power channel from the vacuum environment is realized through the first sealing component arranged between the thick-film circuit heater and the flange, and the safety performance of the equipment is further improved.
所述第一密封溝槽的設置保證了所述第一密封部件的設置穩定性,進一步實現提高設備的安全性能的目的。The setting of the first sealing groove ensures the setting stability of the first sealing component, and further achieves the purpose of improving the safety performance of the equipment.
本發明通過將所述厚膜電路加熱器設置在所述第一邊緣環片和所述第二邊緣環片之間,由此可知,所述厚膜電路加熱器距離所述聚焦環近,由此更有效的對所述聚焦環進行溫控。In the present invention, the thick film circuit heater is arranged between the first edge ring piece and the second edge ring piece, so it can be seen that the thick film circuit heater is close to the focus ring, and thus This more effectively controls the temperature of the focus ring.
本發明通過將所述法蘭分為多個相互密封連接的法蘭段,由此可以實現便於維護,降低製備成本的目的。In the present invention, the flange is divided into a plurality of flange sections that are hermetically connected to each other, thereby facilitating maintenance and reducing manufacturing costs.
由於所述法蘭的設置,且所述法蘭為非金屬法蘭,則所述法蘭的內部可以設置具有任意彎曲角度的第二通道,由此實現所述控溫線纜從所述基座底部中心的出口伸出與外部控溫系統連接的目的,解決了現有技術由於接地環的空間限制,在其內部難以佈置接近90度彎曲的送電通道的問題。Due to the setting of the flange, and the flange is a non-metallic flange, the inside of the flange can be provided with a second channel with any bending angle, thereby realizing the temperature control cable from the base The outlet at the center of the bottom of the seat extends out to connect with the external temperature control system, which solves the problem in the prior art that due to the space limitation of the grounding ring, it is difficult to arrange a nearly 90-degree curved power transmission channel inside it.
本發明通過設置多個所述法蘭的,由此所述厚膜電路加熱器也可以為多個,且沿所述基座的周向間隔設置,由此實現對所述聚焦環進行更好的溫度控制,由於所述厚膜電路加熱器設置在所述邊緣環上,可以通過更換邊緣環以及所述法蘭實現更換所述聚焦環溫控系統,節約成本,解決了現有的聚焦環由於直接整合在所述基座上,通過基座上的溫控系統實現對聚焦環的溫控,此聚焦環只能整體維護,維護時需要整體更換所述基座和聚焦環的問題。In the present invention, by setting a plurality of flanges, the thick-film circuit heaters can also be multiple, and arranged at intervals along the circumference of the base, so as to achieve better control of the focus ring. temperature control, since the thick film circuit heater is set on the edge ring, the focus ring temperature control system can be replaced by replacing the edge ring and the flange, which saves costs and solves the problem of the existing focus ring It is directly integrated on the base, and the temperature control of the focus ring is realized through the temperature control system on the base. The focus ring can only be maintained as a whole, and the base and the focus ring need to be replaced as a whole during maintenance.
本發明通過設置的溫度感測器,實現對聚焦環更加準確的溫控,便於使得聚焦環的溫度滿足不同製程的需求的目的。The present invention realizes more accurate temperature control on the focus ring through the provided temperature sensor, so as to facilitate the purpose of making the temperature of the focus ring meet the requirements of different manufacturing processes.
以下結合附圖和具體實施方式對本發明提出的一種聚焦環溫控組件、基座及電漿處理設備作進一步詳細說明。根據下面說明,本發明的優點和特徵將更清楚。需要說明的是,附圖採用非常簡化的形式且均使用非精準的比例,僅用以方便、明晰地輔助說明本發明實施方式的目的。為了使本發明的目的、特徵和優點能夠更加明顯易懂,請參閱附圖。須知,本說明書所附圖式所繪示的結構、比例、大小等,均僅用以配合說明書所揭示的內容,以供熟悉此技術的人士瞭解與閱讀,並非用以限定本發明實施的限定條件,故不具技術上的實質意義,任何結構的修飾、比例關係的改變或大小的調整,在不影響本發明所能產生的功效及所能達成的目的下,均應仍落在本發明所揭示的技術內容能涵蓋的範圍內。A focus ring temperature control assembly, base and plasma processing equipment proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that the drawings are in a very simplified form and all use imprecise scales, which are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention. In order to make the objects, features and advantages of the present invention more comprehensible, please refer to the accompanying drawings. It should be noted that the structures, proportions, sizes, etc. shown in the drawings attached to this specification are only used to match the content disclosed in the specification, for those who are familiar with this technology to understand and read, and are not used to limit the implementation of the present invention. condition, so it has no technical substantive meaning, and any modification of structure, change of proportional relationship or adjustment of size shall still fall within the scope of the present invention without affecting the effect and purpose of the present invention. within the scope covered by the disclosed technical content.
實施例一Embodiment one
如圖2所示,本實施例提供一種聚焦環溫控組件,其應用於電漿處理設備中,所述電漿處理設備包括:基座100,環繞所述基座100設置的絕緣環200、接地環300和聚焦環500,所述接地環300環繞所述絕緣環200外圓周設置,所述聚焦環500位於所述絕緣環200上方;所述聚焦環溫控組件包括:邊緣環400,其環繞所述基座100設置,位於所述聚焦環500和所述絕緣環200之間;加熱組件,其設置在所述邊緣環400上。法蘭,其設置在所述絕緣環200和所述基座100之間,位於所述加熱組件下方,所述法蘭內部設有電源通道。控溫線纜810,其通過所述電源通道與所述加熱組件電連接,以通過所述加熱組件對所述聚焦環500進行溫控。As shown in Figure 2, this embodiment provides a focus ring temperature control assembly, which is applied in plasma processing equipment, and the plasma processing equipment includes: a base 100, an insulating ring 200 arranged around the base 100, Grounding ring 300 and focusing ring 500, the grounding ring 300 is arranged around the outer circumference of the insulating ring 200, the focusing ring 500 is located above the insulating ring 200; the focusing ring temperature control assembly includes: an edge ring 400, which It is arranged around the base 100 and is located between the focus ring 500 and the insulation ring 200 ; a heating component is arranged on the edge ring 400 . A flange, which is arranged between the insulating ring 200 and the base 100, is located below the heating assembly, and a power channel is arranged inside the flange. A temperature control cable 810 is electrically connected to the heating assembly through the power channel, so as to control the temperature of the focus ring 500 through the heating assembly.
由此可知,本實施例所提供的聚焦環溫控組件,通過設置在絕緣環200和基座之間的法蘭,所述法蘭內可以設置電源通道的空間充足,解決了由於現有技術中的接地環空間有限,很難做到非常好的密封性,若是由此導致送電通道暴露在電漿環境中,電漿遇到強電流容易引起爆炸,導致的安全隱患問題,並且因為法蘭設置在絕緣環200與基座100之間,使加熱組件和控溫通道更靠近基座,相應的上方邊緣環400不需要做向外延長結構,節省了空間。It can be seen that, in the focus ring temperature control assembly provided in this embodiment, through the flange provided between the insulating ring 200 and the base, there is sufficient space for the power supply channel in the flange, which solves the problems caused by the prior art. The space of the grounding ring is limited, and it is difficult to achieve very good sealing. If the power transmission channel is exposed to the plasma environment, the plasma will easily explode when encountering a strong current, resulting in potential safety hazards, and because the flange setting Between the insulating ring 200 and the base 100, the heating assembly and the temperature control channel are brought closer to the base, and the corresponding upper edge ring 400 does not need to be extended outward, which saves space.
請繼續參考圖2所示,所述加熱組件為第一厚膜電路加熱器600,其設置在所述邊緣環400和所述法蘭之間,與所述控溫電纜810電連接。所述第一厚膜電路加熱器600用於給所述邊緣環400加熱,所述基座100內設置有冷卻通道用於給邊緣環400降溫,以對邊緣環400的溫度控制,所述邊緣環400與所述聚焦環500之間接觸進行熱傳導。可以理解的是,所述第一厚膜電路加熱器600可以預先通過燒結製程燒結在所述邊緣環400的下表面對應的位置上,以實現通過對所述邊緣環400加熱,由於邊緣環400與所述聚焦環500接觸實現對所述聚焦環500進行熱傳導的目的,另外此由於此燒結製程成熟,可以降低聚焦環溫控系統的製備成本。Please continue to refer to FIG. 2 , the heating component is a first thick film circuit heater 600 , which is disposed between the edge ring 400 and the flange, and is electrically connected to the temperature control cable 810 . The first thick film circuit heater 600 is used to heat the edge ring 400, and a cooling channel is provided in the base 100 for cooling the edge ring 400, so as to control the temperature of the edge ring 400. The contact between the ring 400 and the focus ring 500 conducts heat conduction. It can be understood that the first thick film circuit heater 600 can be pre-sintered on the corresponding position on the lower surface of the edge ring 400 through a sintering process, so as to realize heating of the edge ring 400, because the edge ring 400 The purpose of heat conduction to the focus ring 500 is realized by being in contact with the focus ring 500 , and because the sintering process is mature, the manufacturing cost of the focus ring temperature control system can be reduced.
請繼續參考圖2所示,在本實施例中,所述第一厚膜電路加熱器600與所述法蘭之間密封設置。具體的,為了實現上述密封,本實施例一方面可以通過設置一第一密封部件802,其設置在所述第一厚膜電路加熱器600與所述法蘭之間。所述法蘭靠近所述第一厚膜電路加熱器600的一端設有第一密封溝槽,所述第一密封部件802位於所述第一密封溝槽內部。所述第一密封部件802可以為O型密封圈,所述第一密封溝槽可以為環形環繞所述電源通道的出口和/或進口設置,但本發明不以此為限。因在此處設置的法蘭寬度足夠,所以可以在其上放設置所述第一密封部件,所述第一密封溝槽的設置實現將電源通道與真空環境隔開,防止電漿洩漏到電源通道中,提高了設備的安全性能。Please continue to refer to FIG. 2 . In this embodiment, the first thick film circuit heater 600 is sealed between the flange. Specifically, in order to achieve the above-mentioned sealing, on the one hand, this embodiment can arrange a first sealing member 802, which is arranged between the first thick-film circuit heater 600 and the flange. One end of the flange close to the first thick film circuit heater 600 is provided with a first sealing groove, and the first sealing member 802 is located inside the first sealing groove. The first sealing member 802 may be an O-ring, and the first sealing groove may be annularly arranged around the outlet and/or inlet of the power channel, but the present invention is not limited thereto. Because the width of the flange provided here is sufficient, the first sealing part can be placed on it, and the setting of the first sealing groove can separate the power channel from the vacuum environment and prevent the plasma from leaking to the power supply. In the channel, the security performance of the equipment is improved.
另一方面,所述第一厚膜電路加熱器600與所述法蘭之間的接觸面為密封面,其表面粗糙度Ra<0.4。所述密封面的表面粗糙度Ra<0.4,進一步提高了所述密封面處的密封性能,進一步提高了設備的安全性能。On the other hand, the contact surface between the first thick film circuit heater 600 and the flange is a sealing surface, and its surface roughness is Ra<0.4. The surface roughness of the sealing surface is Ra<0.4, which further improves the sealing performance at the sealing surface and further improves the safety performance of the equipment.
在一些其他的實施例中,為了便於安裝和製備,所述法蘭可以分為多個相互密封連接的法蘭段。In some other embodiments, for the convenience of installation and preparation, the flange can be divided into a plurality of flange segments that are sealed and connected with each other.
請繼續參考圖2所示,在本實施例中,所述法蘭段為兩個,記為第一法蘭段800和第二法蘭段801,所述第一法蘭段800靠近所述加熱組件設置;所述第二法蘭段801遠離所述加熱組件設置。Please continue to refer to FIG. 2, in this embodiment, there are two flange segments, denoted as a first flange segment 800 and a second flange segment 801, and the first flange segment 800 is close to the The heating assembly is arranged; the second flange section 801 is arranged away from the heating assembly.
所述第一法蘭段800內設有第一通道,所述第二法蘭段801內設有第二通道,所述第一通道和所述第二通道相互貫通。所述第二通道向所述基座100彎曲設置,且與所述基座100底部中心的出口連通;所述控溫線纜810的一端貫穿所述第二通道和所述第一通道與所述加熱組件電連接,其另一端經所述基座100底部中心的出口與外部控溫系統連通。在一些實施例中,基座100包括位於基座底部的安裝板,基座底部中心的出口設置在安裝板上。A first passage is provided in the first flange section 800 , a second passage is provided in the second flange section 801 , and the first passage and the second passage communicate with each other. The second channel is bent toward the base 100 and communicates with the outlet at the center of the bottom of the base 100; one end of the temperature control cable 810 runs through the second channel and the first channel to connect with the The heating element is electrically connected, and the other end communicates with an external temperature control system through an outlet at the bottom center of the base 100 . In some embodiments, the base 100 includes a mounting plate at the bottom of the base, and the outlet at the center of the bottom of the base is disposed on the mounting plate.
可以理解的是,由於控溫線纜810貫穿所述第一通道和所述第二通道,由此所述第一通道和所述第二通道的位置也可參考圖2中的所述控溫線纜810所在的位置。It can be understood that since the temperature control cable 810 runs through the first channel and the second channel, the positions of the first channel and the second channel can also refer to the temperature control in FIG. 2 Where the cable 810 is located.
請繼續參考圖2所示,在本實施例中,還包括:第三密封部件803,其設置在所述第一法蘭段800和第二法蘭段801之間。具體的,所述第一法蘭段800和所述第二法蘭段810之間的接觸面設有第三密封溝槽,所述第三密封部件803設置在所述第三密封溝槽內部。Please continue to refer to FIG. 2 , in this embodiment, it further includes: a third sealing member 803 disposed between the first flange segment 800 and the second flange segment 801 . Specifically, the contact surface between the first flange segment 800 and the second flange segment 810 is provided with a third sealing groove, and the third sealing member 803 is arranged inside the third sealing groove .
在本實施例中,還包括:第四密封部件804,其設置在所述第二法蘭段801和所述基座100側壁之間。所述第二法蘭段801的側壁上設有環繞所述第二通道的第四密封溝槽,所述第四密封部件804設置所述第四密封溝槽內。In this embodiment, it further includes: a fourth sealing member 804 disposed between the second flange segment 801 and the side wall of the base 100 . A fourth sealing groove surrounding the second passage is provided on the side wall of the second flange section 801 , and the fourth sealing member 804 is disposed in the fourth sealing groove.
由此可知,所述第三密封部件803和所述第四密封部件804的設置進一步保證了所述控溫線纜810與大氣環境和/或真空環境隔絕,使得所述控溫線纜810與電漿不接觸,進一步提高了設備的安全性能。It can be seen from this that the arrangement of the third sealing member 803 and the fourth sealing member 804 further ensures that the temperature control cable 810 is isolated from the atmospheric environment and/or vacuum environment, so that the temperature control cable 810 and the The plasma does not touch, which further improves the safety performance of the equipment.
如圖4所示,在本實施例中所述法蘭為非金屬法蘭。例如可以採用硬塑膠材質進行製備,但本發明不以此為限。As shown in Fig. 4, the flange described in this embodiment is a non-metallic flange. For example, hard plastic materials can be used for preparation, but the present invention is not limited thereto.
所述法蘭的數量為多個,即所述第一法蘭段800可以為多個,且沿所述基座100的周向間隔設置。所述絕緣環200的周向間隔設置有多個安裝槽,每一所述安裝槽位於所述絕緣環200和所述基座100的側壁之間,所述法蘭(第一法蘭段800和第二法蘭段801)一一對應設置在所述安裝槽內部,每一所述法蘭側壁與所述基座100的側壁接觸。There are multiple flanges, that is, there may be multiple first flange segments 800 , and they are arranged at intervals along the circumference of the base 100 . The circumferential interval of the insulating ring 200 is provided with a plurality of installation grooves, each of which is located between the insulating ring 200 and the side wall of the base 100, and the flange (the first flange section 800 and the second flange segment 801 ) are disposed inside the installation groove one by one, and each flange side wall is in contact with the side wall of the base 100 .
由於所述非金屬法蘭的設置,則所述法蘭的內部可以設置具有任意彎曲角度的第二通道,由此實現所述控溫線纜810從所述基座100底部中心的出口伸出與外部控溫系統連接的目的,解決了現有技術由於接地環的空間限制,如果將其內部的送電通道也彎向基座中心底部,則在其內部難以佈置接近90度彎曲的送電通道的問題。Due to the arrangement of the non-metallic flange, a second passage with any bending angle can be provided inside the flange, thereby enabling the temperature control cable 810 to protrude from the outlet at the bottom center of the base 100 The purpose of connecting with the external temperature control system is to solve the problem in the prior art that due to the space limitation of the grounding ring, if the internal power transmission channel is also bent to the bottom of the center of the base, it is difficult to arrange a power transmission channel close to 90 degrees inside. .
本實施例通過設置多個所述法蘭的,由此所述第一厚膜電路加熱器600也可以為多個,且沿所述基座100的周向間隔設置,由此實現對所述聚焦環500進行更好的溫度控制,由於所述第一厚膜電路加熱器600設置在所述邊緣環400上,可以通過更換邊緣環400以及所述法蘭實現更換所述聚焦環溫控系統,節約成本,解決了現有的聚焦環由於直接整合在所述基座上,通過基座上的溫控系統實現對聚焦環的溫控,此聚焦環只能整體維護,維護時需要整體更換所述基座和聚焦環的問題。In this embodiment, a plurality of flanges are provided, so that the first thick film circuit heater 600 can also be multiple, and arranged at intervals along the circumference of the base 100, thus achieving the realization of the The focus ring 500 performs better temperature control. Since the first thick film circuit heater 600 is arranged on the edge ring 400, the focus ring temperature control system can be replaced by replacing the edge ring 400 and the flange. , save cost, and solve the problem that the existing focus ring is directly integrated on the base, and the temperature control of the focus ring is realized through the temperature control system on the base. This focus ring can only be maintained as a whole, and it needs to be replaced as a whole during maintenance. problems with the base and focus ring described above.
請繼續參考圖2所示,所述基座100的邊緣上具有台階,所述邊緣環400一部分搭在所述台階上,另一部分搭在所述法蘭(圖1中的第一法蘭段800)上,所述台階的上表面上設置有第一導熱墊700;即所述邊緣環400的下表面既和所述台階接觸又和所述法蘭接觸。所述聚焦環500和所述邊緣環400之間設置有第二導熱墊710。通過第一導熱墊700和第二導熱墊710提高不同部件之間的熱傳導效率。Please continue to refer to FIG. 2, the edge of the base 100 has a step, a part of the edge ring 400 rides on the step, and another part rides on the flange (the first flange segment in FIG. 1 800), the upper surface of the step is provided with a first thermal pad 700; that is, the lower surface of the edge ring 400 is in contact with both the step and the flange. A second heat conduction pad 710 is disposed between the focus ring 500 and the edge ring 400 . The heat conduction efficiency between different components is improved by the first heat conduction pad 700 and the second heat conduction pad 710 .
由此可知,本實施例利用所述第一厚膜電路加熱器600給所述邊緣環400加熱,所述邊緣環400的熱量通過所述第二導熱墊710傳遞給所述聚焦環500;以及通過所述聚焦環500和所述邊緣環400的接觸面上,通過接觸傳熱。It can be seen that, in this embodiment, the first thick film circuit heater 600 is used to heat the edge ring 400 , and the heat of the edge ring 400 is transferred to the focus ring 500 through the second thermal pad 710 ; and Through the contact surfaces of the focus ring 500 and the edge ring 400 , heat is transferred by contact.
本實施例由於所述邊緣環400的下表面和所述台階接觸,由此,本實施例可利用所述基座100中的冷卻通道給所述邊緣環400降溫,實現對邊緣環400的溫度控制。所述第一導熱墊700的設置使得所述邊緣環400和所述基座100之間具有良好的熱傳導,最終實現對聚焦環500的溫度控制。通過對聚焦環500的更準確精細的溫度控制,使其在蝕刻等處理中可調節,從而滿足更高的製程需求。In this embodiment, since the lower surface of the edge ring 400 is in contact with the step, the cooling channel in the base 100 can be used in this embodiment to cool down the edge ring 400 to realize the temperature control of the edge ring 400. control. The arrangement of the first heat conduction pad 700 enables good heat conduction between the edge ring 400 and the base 100 , and finally realizes the temperature control of the focus ring 500 . Through more accurate and fine temperature control of the focus ring 500 , it can be adjusted in etching and other processes, so as to meet higher process requirements.
在本實施例中,還包括:多個溫度感測器,每一所述溫度感測器通過對應的所述電源通道設置在所述加熱組件處,用於探測所述聚焦環500的溫度。可以理解的是,每一所述溫度感測器可以採用光纖測溫感測器,也可以是其他形式的測溫元元件。In this embodiment, it further includes: a plurality of temperature sensors, each of the temperature sensors is arranged at the heating assembly through the corresponding power channel, and is used for detecting the temperature of the focus ring 500 . It can be understood that each of the temperature sensors can be an optical fiber temperature sensor, or can be other forms of temperature measurement elements.
實施例二Embodiment two
如圖3所示,本實施例與實施例一的區別在於,所述邊緣環400包括上下相對設置的第一邊緣環片401和第二邊緣環片402;As shown in FIG. 3 , the difference between this embodiment and Embodiment 1 is that the edge ring 400 includes a first edge ring piece 401 and a second edge ring piece 402 arranged up and down oppositely;
所述加熱組件為第二厚膜電路加熱器610,其設置在所述第一邊緣環片401和所述第二邊緣環片402之間,與所述控溫電纜810連接。所述第二厚膜電路加熱器610用於給所述邊緣環(第一邊緣環片401和第二邊緣環片402)加熱,所述基座100的冷卻通道用於給邊緣環400(第一邊緣環片401和第二邊緣環片402)降溫,以對邊緣環400進行溫度控制,所述邊緣環400與所述聚焦環500之間接觸進行熱傳導。The heating component is a second thick film circuit heater 610 , which is arranged between the first edge ring piece 401 and the second edge ring piece 402 and connected to the temperature control cable 810 . The second thick film circuit heater 610 is used to heat the edge ring (the first edge ring piece 401 and the second edge ring piece 402 ), and the cooling channel of the base 100 is used to heat the edge ring 400 (the first edge ring piece 402 ). The temperature of the first edge ring piece 401 and the second edge ring piece 402 ) is lowered to control the temperature of the edge ring 400 , and the contact between the edge ring 400 and the focus ring 500 conducts heat.
在本實施例中,所述第二厚膜電路加熱器610的內圓周或外圓周處的所述第一邊緣環401和所述第二邊緣環402之間均存在拼接縫隙,所有的拼接縫隙採用密封材料密封。In this embodiment, there are splicing gaps between the first edge ring 401 and the second edge ring 402 at the inner or outer circumference of the second thick film circuit heater 610, and all the splicing gaps Sealed with sealing material.
即本實施例可以將所述第二厚膜電路加熱器610設置在所述邊緣環的內部。將所述第二厚膜電路加熱器610預先燒結到第一邊緣環片401或第二邊緣環片402上,之後兩片邊緣環片上下蓋合後,產生的拼接縫隙可以用非金屬材料粘接,也可以用填充金屬材料熔融後將兩片陶瓷環焊接在一起,做到真空密封所述第二厚膜電路加熱器610。That is, in this embodiment, the second thick film circuit heater 610 may be disposed inside the edge ring. The second thick film circuit heater 610 is pre-sintered on the first edge ring piece 401 or the second edge ring piece 402, and then after the two edge ring pieces are covered up and down, the resulting splicing gap can be glued with non-metallic materials. Next, two pieces of ceramic rings can also be welded together after melting the filler metal material, so as to achieve vacuum sealing of the second thick film circuit heater 610.
請繼續參考圖3所示,所述第二邊緣環片402與所述法蘭(具體的是第一法蘭段800)之間密封設置。所述第二邊緣環片402與所述法蘭之間的接觸面為密封面,其表面粗糙度Ra<0.4。Please continue to refer to FIG. 3 , the seal between the second edge ring piece 402 and the flange (specifically, the first flange segment 800 ) is arranged. The contact surface between the second edge ring piece 402 and the flange is a sealing surface, and its surface roughness is Ra<0.4.
本實施例還包括第二密封部件805,其設置在所述第二邊緣環片402與所述法蘭(具體的是第一法蘭段800)之間。所述法蘭(具體的是第一法蘭段800)靠近所述第二邊緣環片402的一端設有第二密封溝槽,所述第二密封部件805位於所述第二密封溝槽內部。This embodiment further includes a second sealing member 805 disposed between the second edge ring piece 402 and the flange (specifically, the first flange segment 800 ). The flange (specifically, the first flange section 800 ) is provided with a second sealing groove at one end close to the second edge ring piece 402 , and the second sealing member 805 is located inside the second sealing groove .
另一方面,本實施例還提供一種基座,包括:如上文實施例所述的聚焦環溫控組件。On the other hand, this embodiment also provides a base, including: the focus ring temperature control assembly as described in the above embodiments.
再一方面,如圖5所示,本實施例還提供一種電漿處理設備,包括:反應腔900,位於所述反應腔900內上方設置一氣體噴淋頭901和一與所述氣體噴淋頭901相對設置的基座,所述基座為如上文所述的基座,包括靜電夾盤910,用於承載基片,聚焦環911用於調控基片的邊緣電漿分佈,覆蓋環913用於保護聚焦環911的外邊緣,邊緣環912位於聚焦環911下方,其內設置有加熱組件,絕緣環914設置在邊緣環912下方,其內設置有帶有電源通道的法蘭,通過電源通道將直流電源與所述加熱組件電連接,用於利用邊緣環912控制聚焦環911的溫度變化,以實現基片的蝕刻均勻性。因電源通道間接設置在絕緣環914中,絕緣環914更靠近基座,其具有更大的環寬度,利於在絕緣環914的上下邊緣設置密封件防止電漿進入電源通道發生電弧放電危險,此外,因為半導體處理設備的空間設置需要,電源線需要從基座下方排布出反應腔900再與電源連接,所以更靠近基座的絕緣環914可以減小電線的彎折程度,不需要折成直角,有利於電源線維持強度。On the other hand, as shown in FIG. 5 , this embodiment also provides a plasma processing equipment, including: a reaction chamber 900, a gas shower head 901 and a gas shower head 901 are arranged above the reaction chamber 900 The pedestal opposite to the head 901, the pedestal is as described above, including an electrostatic chuck 910 for carrying the substrate, a focus ring 911 for regulating the edge plasma distribution of the substrate, and a cover ring 913 Used to protect the outer edge of the focus ring 911, the edge ring 912 is located under the focus ring 911, and a heating assembly is arranged inside it, and the insulating ring 914 is arranged under the edge ring 912, and a flange with a power channel is arranged inside, through which the power supply The channel electrically connects the DC power supply to the heating assembly, and is used to control the temperature change of the focus ring 911 by using the edge ring 912 to achieve etching uniformity of the substrate. Because the power channel is indirectly arranged in the insulating ring 914, the insulating ring 914 is closer to the base, which has a larger ring width, which is beneficial to provide seals on the upper and lower edges of the insulating ring 914 to prevent the plasma from entering the power channel and causing arc discharge. , because of the space requirements of the semiconductor processing equipment, the power line needs to be arranged out of the reaction chamber 900 from the bottom of the base and then connected to the power supply, so the insulating ring 914 closer to the base can reduce the bending degree of the wire and does not need to be folded into The right angle is good for the power cord to maintain its strength.
綜上所述,本發明所提供的聚焦環溫控組件,通過設置在絕緣環和基座之間的法蘭,所述法蘭內部設有電源通道。控溫線纜,其通過所述電源通道與所述加熱組件電連接,以通過所述加熱組件對所述聚焦環進行溫控。由此可知,所述法蘭的設置電源通道的空間充足,解決了由於現有技術中的接地環空間有限,很難做到非常好的密封性,若是由此導致送電通道暴露在電漿環境中,電漿遇到強電流容易引起爆炸,導致的安全隱患問題。To sum up, the focus ring temperature control assembly provided by the present invention uses a flange arranged between the insulating ring and the base, and a power channel is provided inside the flange. A temperature control cable, which is electrically connected to the heating component through the power channel, so as to control the temperature of the focus ring through the heating component. It can be seen that the flange has sufficient space for setting the power supply channel, which solves the problem that due to the limited space of the grounding ring in the prior art, it is difficult to achieve very good sealing. If this causes the power transmission channel to be exposed to the plasma environment , The plasma is prone to explosion when it encounters a strong current, resulting in potential safety hazards.
本實施例利用所述膜電路加熱器給所述邊緣環加熱,所述邊緣環與所述聚焦環之間接觸傳熱。利用所述基座中的冷卻通道給所述邊緣環降溫,實現對邊緣環的溫度控制,最終實現對聚焦環的溫度控制。本實施例通過對聚焦環的更準確精細的溫度獨立控制,使其在蝕刻等處理中可調節,從而滿足更高的製程需求。In this embodiment, the film circuit heater is used to heat the edge ring, and heat is transferred through contact between the edge ring and the focus ring. The temperature of the edge ring is cooled by using the cooling channel in the base, so as to realize the temperature control of the edge ring and finally realize the temperature control of the focus ring. In this embodiment, the focus ring can be adjusted in etching and other processes through more accurate and fine temperature independent control, so as to meet higher process requirements.
需要說明的是,在本文中,諸如第一和第二等之類的關係術語僅僅用來將一個實體或者操作與另一個實體或操作區分開來,而不一定要求或者暗示這些實體或操作之間存在任何這種實際的關係或者順序。而且,術語“包括”、“包含”或者其任何其他變體意在涵蓋非排他性的包含,從而使得包括一系列要素的過程、方法、物品或者設備不僅包括那些要素,而且還包括沒有明確列出的其他要素,或者是還包括為這種過程、方法、物品或者設備所固有的要素。在沒有更多限制的情況下,由語句“包括一個……”限定的要素,並不排除在包括所述要素的過程、方法、物品或者設備中還存在另外的相同要素。It should be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is a relationship between these entities or operations. There is no such actual relationship or order between them. Furthermore, the term "comprises", "comprises" or any other variation thereof is intended to cover a non-exclusive inclusion such that a process, method, article, or apparatus comprising a set of elements includes not only those elements, but also includes elements not expressly listed. other elements of or also include elements inherent in such a process, method, article, or device. Without further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of additional identical elements in the process, method, article or apparatus comprising said element.
在本發明的描述中,需要理解的是,術語“ 中心”、“ 高度”、“ 厚度”、“ 上”、“ 下”、“ 垂直”、“ 水平”、“ 頂”、“ 底”、“ 內”、“ 外”、“ 軸向”、“ 徑向”、“ 周向”等指示的方位或位置關係為基於附圖所示的方位或位置關係,僅是為了便於描述本發明和簡化描述,而不是指示或暗示所指的裝置或元件必須具有特定的方位、以特定的方位構造和操作,因此不能理解為對本發明的限制。在本發明的描述中,除非另有說明,“ 多個”的含義是兩個或兩個以上。In describing the present invention, it is to be understood that the terms "center", "height", "thickness", "upper", "lower", "vertical", "horizontal", "top", "bottom", " The orientation or positional relationship indicated by "inner", "outer", "axial", "radial" and "circumferential" are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description , rather than indicating or implying that the device or element referred to must have a particular orientation, be constructed and operate in a particular orientation, and thus should not be construed as limiting the invention. In the description of the present invention, unless otherwise specified, "plurality" means two or more.
在本發明的描述中,除非另有明確的規定和限定,術語“ 安裝”、“ 相連”、“ 連接”、“ 固定”應做廣義理解,例如,可以是固定連接,也可以是可拆卸連接,或成一體;可以是機械連接,也可以是電連接;可以是直接相連,也可以通過中間媒介間接相連,可以是兩個元件內部的連通或兩個元件的相互作用關係。對於本發明所屬技術領域的通常知識者而言,可以具體情況理解上述術語在本發明中的具體含義。In the description of the present invention, unless otherwise specified and limited, the terms "installation", "connection", "connection" and "fixation" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection , or integrated; it can be mechanically connected or electrically connected; it can be directly connected or indirectly connected through an intermediary, and it can be the internal communication of two components or the interaction relationship between two components. For those skilled in the technical field to which the present invention belongs, specific meanings of the above terms in the present invention can be understood in specific situations.
在本發明中,除非另有明確的規定和限定,第一特徵在第二特徵之“ 上”或之“ 下”可以包括第一和第二特徵直接接觸,也可以包括第一和第二特徵不是直接接觸而是通過它們之間的另外的特徵接觸。而且,第一特徵在第二特徵“ 之上”、“ 上方”和“ 上面”包括第一特徵在第二特徵正上方和斜上方,或僅僅表示第一特徵水平高度高於第二特徵。第一特徵在第二特徵“ 之下”、“ 下方”和“ 下面”包括第一特徵在第二特徵正下方和斜下方,或僅僅表示第一特徵水平高度小於第二特徵。In the present invention, unless otherwise clearly specified and limited, a first feature being "on" or "under" a second feature may include direct contact between the first and second features, and may also include the first and second features Not in direct contact but through another characteristic contact between them. Moreover, "on", "above" and "above" the first feature on the second feature include that the first feature is directly above and obliquely above the second feature, or simply means that the level of the first feature is higher than that of the second feature. "Below", "under" and "under" the first feature on the second feature include that the first feature is directly below and obliquely below the second feature, or simply means that the level of the first feature is smaller than that of the second feature.
儘管本發明的內容已經通過上述優選實施例作了詳細介紹,但應當認識到上述的描述不應被認為是對本發明的限制。在本發明所屬技術領域的通常知識者閱讀了上述內容後,對於本發明的多種修改和替代都將是顯而易見的。因此,本發明的保護範圍應由所附的申請專利範圍來限定。Although the content of the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as limiting the present invention. Various modifications and substitutions of the present invention will be apparent to those skilled in the art to which the present invention pertains after reading the foregoing. Therefore, the protection scope of the present invention should be defined by the appended patent application scope.
100:基座 200,914:絕緣環 300:接地環 400,912:邊緣環 401:第一邊緣環片 402:第二邊緣環片 500,911:聚焦環 600:第一厚膜電路加熱器 610:第二厚膜電路加熱器 700:第一導熱墊 710:第二導熱墊 800:第一法蘭段 801:第二法蘭段 802:第一密封部件 803:第三密封部件 804:第四密封部件 805:第二密封部件 810:控溫線纜 900:反應腔 901:氣體噴淋頭 910:靜電夾盤 913:覆蓋環 100: base 200,914: insulation ring 300: Grounding ring 400,912: edge ring 401: first edge ring piece 402: second edge ring piece 500,911: focus ring 600: First Thick Film Circuit Heater 610: Second thick film circuit heater 700: The first thermal pad 710: Second thermal pad 800: The first flange section 801: Second flange segment 802: the first sealing part 803: The third sealing part 804: The fourth sealing part 805: Second sealing part 810: temperature control cable 900: reaction chamber 901: Gas sprinkler head 910: Electrostatic Chuck 913: cover ring
圖1為現有技術中的聚焦環溫控組件的結構示意圖; 圖2為本發明一實施例提供的聚焦環溫控組件的結構示意圖; 圖3為本發明另一實施例提供的聚焦環溫控組件的結構示意圖; 圖4為本發明另一實施例提供的聚焦環溫控組件中的法蘭分佈俯視示意圖;以及 圖5為本發明一實施例提供的電漿處理設備的主要結構示意圖。 FIG. 1 is a schematic structural diagram of a focus ring temperature control assembly in the prior art; Fig. 2 is a schematic structural diagram of a focus ring temperature control assembly provided by an embodiment of the present invention; Fig. 3 is a schematic structural diagram of a focus ring temperature control assembly provided by another embodiment of the present invention; Fig. 4 is a top view schematic diagram of flange distribution in the focus ring temperature control assembly provided by another embodiment of the present invention; and Fig. 5 is a schematic diagram of the main structure of the plasma treatment equipment provided by an embodiment of the present invention.
100:基座 100: base
200:絕緣環 200: insulating ring
300:接地環 300: Grounding ring
400:邊緣環 400: edge ring
500:聚焦環 500: focus ring
600:第一厚膜電路加熱器 600: First Thick Film Circuit Heater
700:第一導熱墊 700: The first thermal pad
710:第二導熱墊 710: Second thermal pad
800:第一法蘭段 800: The first flange section
801:第二法蘭段 801: Second flange segment
802:第一密封部件 802: the first sealing part
803:第三密封部件 803: The third sealing part
804:第四密封部件 804: The fourth sealing part
810:控溫線纜 810: temperature control cable
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CN202111650575.4 | 2021-12-30 | ||
CN202111650575.4A CN116417320A (en) | 2021-12-30 | 2021-12-30 | Focusing ring temperature control assembly, base and plasma processing equipment |
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TW202327404A true TW202327404A (en) | 2023-07-01 |
TWI878724B TWI878724B (en) | 2025-04-01 |
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