TW202314877A - Substrate holder, bonding system, and bonding method capable of stably bonding semiconductor chips to individual substrates - Google Patents

Abstract

A bonding system (90) of the present invention is provided with a bonding device (80) for bonding semiconductor chips (45) to individual substrates (41); and a substrate holder (10) for holding the individual substrates (41). The bonding device (80) is provided with a stage (31) for fixing, by suction, the substrate holder (10) on a placement surface (13a). The substrate holder (10) is provided with a plate-shaped base (11) having an upper surface (11a) on which the individual substrates (41) are placed and a lower surface (11b) that is fixed by suction onto the placement surface (31a); and a positioning member (21) provided on the base (11) for defining the position of the individual substrates (41).

Description

Substrate holder, bonding system, and bonding method

The present invention relates to a substrate holder holding a single substrate, a bonding system including the substrate holder and a bonding device, and a bonding method in the bonding system.

In the bonding of semiconductor wafers, in many cases, semiconductor wafers are sequentially bonded on each bonding region of a multi-chamfered substrate in which a plurality of bonding regions for bonding semiconductor wafers are arranged. However, when the substrate cannot be diced after bonding, or when the structure is complex and the yield is poor such as a multi-layer printed substrate, the following method can be used, that is, a single substrate is cut out from a multi-chamfered substrate, Arrange and place on the pallet (palette), transport to the platform of the bonding device, absorb and fix each single substrate on the convex part provided on the platform, and sequentially bond semiconductor wafers thereon (for example, refer to Patent Document 1) .

On the other hand, in recent years, the following gold solder fusion bonding has been used, that is, gold bumps are formed on a plurality of electrodes of electronic components, a thin solder film is provided on the surface of a plurality of copper electrodes of a substrate, and a plurality of gold bumps are bonded together. The gold and the solder on the surface of a plurality of copper electrodes are thermally melted and bonded simultaneously (for example, refer to Patent Document 2). [Prior Art Literature] [Patent Document]

Patent Document 1: Japanese Patent Laid-Open No. 2000-21932 Patent Document 2: Japanese Patent Laid-Open No. 2011-254032

[Problem to be Solved by the Invention]

Furthermore, when gold solder fusion bonding as described in Patent Document 2 is used for bonding a semiconductor wafer to a substrate, it is necessary to simultaneously apply heat and a pressing load to the semiconductor wafer and the substrate. However, the convex portion of the stage of the bonding device described in Patent Document 1 is smaller in size than the monolithic substrate in order to avoid interference with the tray, and the monolithic substrate is supported with the peripheral portion protruding outward from the convex portion. In this case, as described in FIG. 9 of Patent Document 1, there is no problem when the size of the semiconductor wafer is smaller than the size of the convex portion. However, in recent years, there have been increasing demands for bonding semiconductor wafers having approximately the same size as the individual substrates to the individual substrates.

At this time, in the bonding apparatus described in Patent Document 1, since the individual substrates at the peripheral edge are not supported by the protrusions, heat and pressing load may not be sufficiently applied to the semiconductor wafer at the peripheral edge and the individual substrates, and the semiconductor wafer may not be bonded together. Stably bonded to a single substrate.

Therefore, an object of the present invention is to stably bond a semiconductor wafer to a single substrate. [Means to solve the problem]

The substrate holder of the present invention holds a single-piece substrate for bonding semiconductor wafers, and is characterized in that it includes: a plate-shaped base, on which the single-piece substrate is placed on the upper surface, and the lower surface is adsorbed and fixed to the loading surface of the platform of the bonding device. ; and a positioning member provided on the base to define the position of the single substrate placed on the upper surface of the base.

Thereby, since the entire surface of the single substrate is held by the upper surface of the susceptor, a semiconductor wafer having substantially the same size as that of the single substrate can be stably bonded to the single substrate.

In the substrate holder of the present invention, the base may also be provided with a through hole penetrating in the thickness direction in the area where the single substrate is placed. It communicates with the adsorption hole of the platform of the bonding device.

Thereby, the single substrate can be sucked and fixed on the upper surface of the base which is sucked and fixed on the loading surface of the platform.

In the substrate holder of the present invention, the base may also place a plurality of single-piece substrates on the upper surface, and a plurality of through holes penetrating in the thickness direction are respectively provided in each area where each single-piece substrate is placed. When the lower surface is suction-fixed to the mounting surface of the platform of the bonding device, it communicates with at least one suction hole provided on the platform of the bonding device.

Thereby, a plurality of single substrates can be adsorbed and fixed at the same time on the upper surface of the base which is adsorbed and fixed on the loading surface of the platform.

In the board|substrate holder of this invention, the base may provide the groove which connects some through-holes in the lower surface.

Thereby, a plurality of through-holes can be vacuumed by using one adsorption hole provided on the platform, and a plurality of individual substrates can be simultaneously adsorbed and fixed on the upper surface of the susceptor.

In the substrate holder according to the present invention, the base may have an upper flatness value of the upper surface and a lower flatness value of the lower surface not more than a reference flatness value, and a variation in thickness may be not more than a reference variation.

In this way, when the base is adsorbed and fixed on the loading surface of the platform, the flatness value of the upper surface is equal to the flatness value of the loading surface of the platform, and can be directly adsorbed and fixed to the loading surface of the platform. The same levelness as in the case of the substrate holds the monolithic substrate above the susceptor.

In the substrate holder of the present invention, the positioning member may be a plate-like member formed with at least one opening for inserting the single-piece substrate, and is superimposed on the base in such a manner that the opening constitutes a recess for specifying the mounting position of the single-piece substrate. superior.

By adopting the structure in which the positioning member and the base are separate members and superimposed on the base, it is unnecessary to process the concave portion of the base to define the position of the individual substrates. Thereby, the processing of the base is simplified, and the flatness value of the base can be reduced.

In the substrate holder of the present invention, the base may be a ceramic member whose upper surface and lower surface are ground, and the positioning member may be made of metal.

Thereby, the flatness value of the upper surface and the lower surface of the base can be reduced and the variation in thickness can be reduced. In addition, by making the positioning member whose flatness value is not limited to an inexpensive metal, processing is facilitated and cost reduction can be achieved.

The bonding system of the present invention includes: a bonding device for bonding a semiconductor wafer to a single substrate; and a substrate holder for holding a single substrate, and the bonding system is characterized in that the bonding device includes: a platform on a mounting surface Adsorption fixed substrate holder, the substrate holder includes: a plate-shaped base, a single substrate is placed on the upper surface, and the lower surface is adsorbed and fixed on the loading surface of the platform; The location of the monolithic substrate placed on the upper surface of the susceptor.

In this way, since the entire surface of the monolithic substrate is held by the upper surface of the susceptor, a semiconductor wafer having substantially the same size as that of the monolithic substrate can be stably bonded to the monolithic substrate.

In the bonding system of the present invention, the platform may also include an adsorption hole, and the base is provided with a through hole penetrating in the thickness direction in the area where the single substrate is placed. The adsorption holes arranged on the platform are connected to each other, and the single substrate is adsorbed and fixed on the upper surface of the base.

In this way, the single substrate can be suction-fixed on the upper surface of the susceptor, which is suction-fixed to the mounting surface of the table, so that a semiconductor wafer having substantially the same size as the single substrate can be stably bonded to the single substrate.

In the bonding system of the present invention, the substrate holder can also place a plurality of single-piece substrates on the upper surface, and the positioning members respectively define the positions of the plurality of single-piece substrates placed on the upper surface of the base. The platform includes at least One adsorption hole, the base is respectively provided with through holes penetrating through the thickness direction in each area where a plurality of single substrates are placed, each through hole communicates with at least one adsorption hole when the lower surface is adsorbed and fixed on the loading surface, and the Each monolithic substrate is adsorbed and fixed on the upper surface of the base respectively.

Thereby, the upper surface of the susceptor which is suction-fixed on the mounting surface of the platform can simultaneously suction-fix a plurality of single-piece substrates, and bond them efficiently.

In the coupling system of the present invention, the base may also be provided with grooves on the lower surface for connecting the plurality of through holes.

Thereby, a plurality of through-holes can be vacuumed by using one adsorption hole provided on the platform, and a plurality of individual substrates can be simultaneously adsorbed and fixed on the upper surface of the susceptor.

In the joining system of the present invention, the base may have an upper flatness value of the upper surface and a lower flatness value of the lower surface not more than a reference flatness value, and a deviation in thickness may be not more than a reference deviation.

Thereby, the single substrate can be held on the susceptor at the same level as the case where the single substrate is directly suction-fixed to the mounting surface of the stage, and stable bonding can be performed.

In the bonding system of the present invention, the positioning member may be a plate-like member formed with at least one opening for inserting the single-piece substrate, and superimposed on the base in such a manner that the opening constitutes a recess for specifying the placement position of the single-piece substrate. .

In the bonding system of the present invention, the base can also be a ceramic member whose upper surface and lower surface are ground, and the positioning member is made of metal.

The bonding method of the present invention bonds a semiconductor wafer to a monolithic substrate, and is characterized by comprising: a preparation step of preparing a substrate holder and a bonding device, the substrate holder including a base on which a plurality of monolithic substrates are placed on an upper surface , and a positioning member provided on the base and specifying the positions of the plurality of single-piece substrates placed on the upper surface of the base, each area where the plurality of single-piece substrates are placed is respectively provided with a The through hole, the bonding device includes a platform having at least one adsorption hole, and presses the semiconductor wafer on the single substrate and bonds it; the loading step is to place a plurality of single substrates on the loading surface of the substrate holder, so that each through The hole communicates with at least one adsorption hole, and the substrate holder is placed on the loading surface of the platform; in the adsorption and fixing step, at least one adsorption hole of the bonding device is set to vacuum, and the substrate holder is adsorbed and fixed on the loading surface of the platform, And the single-chip substrates are sucked and fixed on the upper surface of the base respectively; and the bonding step is sequentially bonding the semiconductor chip on the multiple single-chip substrates.

Thereby, a semiconductor wafer having substantially the same size as that of the single substrate can be stably bonded to the single substrate.

In the bonding method of the present invention, the bonding device may include: a mounting table for mounting a plurality of individual substrates on the mounting surface of the substrate holder, In the loading step, after placing a plurality of individual substrates on the mounting surface of the substrate holder using the stage, the substrate holder loaded with the plurality of individual substrates is transported to the platform, and the transported substrate holder is placed on the platform. Place it on the loading surface of the platform.

Since the substrate holder is used to transport the individual substrates, bonding can be performed with a simple method. [Effect of the invention]

The invention can stably bond the semiconductor chip on the single substrate.

Hereinafter, a joining system 90 according to an embodiment will be described with reference to the drawings. As shown in FIG. 1 , the bonding system 90 includes: a bonding device 80 for bonding the semiconductor wafer 45 to the single substrate 41 ; and a substrate holder 10 for holding the single substrate 41 . In addition, in the following description, it demonstrates assuming that a horizontal direction is an XY direction, and an up-down direction is a Z direction.

The bonding device 80 includes: a stage 31 , and the substrate holder 10 is adsorbed and fixed. The upper surface of the platform 31 is a flat loading surface 31 a, and a plurality of first adsorption holes 32 and a plurality of second adsorption holes 33 are provided on the placement surface 31 a. The first suction hole 32 and the second suction hole 33 are connected to a vacuum device (not shown), and the substrate holder 10 is suction-fixed on the mounting surface 31 a by vacuum.

As shown in FIGS. 2 and 3 , the substrate holder 10 includes a base 11 and a positioning member 21 . The base 11 is a plate-shaped ceramic member whose upper surface 11 a and lower surface 11 b have been ground. 2 shows a state in which the substrate holder 10 is set on the mounting table 50 arranged in the vicinity of the bonding device 80 .

The positioning member 21 is a metal plate-shaped member formed with at least one opening 22 into which the individual substrate 41 is fitted. As shown in FIG. 3 , the positioning member 21 is provided with a pin 23 extending toward the base 11 at the end, and the pin 23 is inserted into the hole 14 provided in the base 11 to overlap on the upper surface 11 a of the base 11 . When the positioning member 21 is superimposed on the upper surface 11 a of the base 11 , the opening 22 constitutes the concave portion 13 that defines the mounting position of the individual substrate 41 as shown in FIG. 2 . The concave portion 13 defines a region where the individual substrate 41 is placed. Furthermore, the size of the hole 14 of the base 11 is larger than that of the pin 23 of the positioning member 21 to absorb the thermal expansion difference between the base 11 and the positioning member 21 .

In the area of the concave portion 13 of the base 11 , a through hole 12 penetrating the base 11 in the thickness direction is provided. The through hole 12 communicates with the second suction hole 33 provided on the mounting surface 31 a when the substrate holder 10 is mounted on the mounting surface 31 a of the table 31 as shown in FIG. 4 .

The upper flatness value of the upper surface 11a of the susceptor 11 and the lower flatness value of the lower surface 11b of the susceptor 11 are respectively equal to or less than the reference flatness value, and the variation in the thickness of the susceptor 11 is equal to or less than the standard deviation. Here, the so-called flatness value refers to the numerical value of the interval between the two planes when the interval between the two parallel planes reaches the minimum when the plane body is clamped by the geometrically parallel two planes of a given length, and the interval value between the two planes ( μm)/established distance (mm) expressed in units. The reference flatness value can be set freely, for example, it can be set between 1 (μm)/100 (mm) and 10 (μm)/100 (mm). In addition, the variation in thickness is a degree of change in thickness within a predetermined range, and can be set between 1 (μm)/100 (mm) and 10 (μm)/100 (mm), for example.

By specifying the upper flatness value of the upper surface 11a of the susceptor 11, the lower flatness value of the lower surface 11b, and the thickness deviation, when the substrate holder 10 is suction-fixed to the mounting surface 31a of the platform 31, the upper The flatness value of the surface 11 a is equivalent to the placement flatness value of the placement surface 31 a of the stage 31 . Therefore, the single-piece substrate 41 can be held on the susceptor 11 at the same level as when the single-piece substrate 41 is directly suction-fixed to the mounting surface 31 a of the stage 31 .

A method of bonding a semiconductor wafer 45 having approximately the same size as the individual substrate 41 to the individual substrate 41 using the bonding system 90 configured as described above will be described. First, the bonding apparatus 80 and the substrate holder 10 are prepared (preparation step).

First, as shown in FIG. 2 , the substrate holder 10 is set on the mounting table 50 . Next, the single-piece substrate 41 is gradually placed in the concave portion 13 of the substrate holder 10 by a collet not shown. On the electrodes 42 arranged on the upper surfaces of the individual substrates 41 , a solder layer 43 is formed as shown in FIG. 4 .

After the single-piece substrate 41 is placed on all the recesses 13, the underfill agent 44 is applied to the upper surface of the single-piece substrate 41, and the substrate holder 10 is placed on the stage 31 of the bonding device 80 as shown in FIG. on the surface 31a. At this time, the lower surface 11b of the base 11 of the substrate holder 10 covers the first suction hole 32 provided on the mounting surface 31a, and the through hole 12 of the base 11 communicates with the second suction hole 33 provided on the mounting surface 31a. (loading step).

Next, when the first suction hole 32 and the second suction hole 33 are vacuumed by a vacuum device (not shown) of the bonding device 80 , the lower surface 11 b of the susceptor 11 is sucked and held on the mounting surface 31 a. In addition, when the second suction hole 33 becomes vacuum, the through-hole 12 of the susceptor 11 communicating with the second suction hole 33 also becomes vacuum. Thus, the entire surface of the single-piece substrate 41 placed on the concave portion 13 of the susceptor 11 is suction-held on the upper surface 11 a of the susceptor 11 in the region of the concave portion 13 (suction and fixing step).

The bonding apparatus 80 heats the stage 31 with a heater built in the stage 31, and raises the temperature of the individual substrate 41 to the bonding start temperature T1 as shown in FIG. 5 . Here, the solid line a in FIG. 5 represents the temperature change of the monolithic substrate 41 when the susceptor 11 is made of ceramics with low thermal conductivity, and the chain line b in FIG. 5 represents the case where the thermal conductivity is higher than that of the solid line a. The temperature change of the monolithic substrate 41 in the case where the base 11 is made of ceramics. The solid line a and the dot chain line b in FIG. 5 will be described later.

On the other hand, the bonding device 80 adsorbs and holds the semiconductor wafer 45 at the tip of the bonding tool 36 attached to the tip of the bonding head 35 , and moves to directly above the individual substrate 41 . Gold bumps 46 are formed on the electrodes of the semiconductor wafer 45 . The bonding head 35 incorporates a heater for heating the semiconductor wafer 45 .

After the temperature of the single substrate 41 rises to the bonding start temperature T1, the bonding device 80 raises the temperature of the semiconductor wafer 45 by using the heater built in the bonding head 35, and lowers the bonding head 35 to bond the gold bump 46 of the semiconductor wafer 45 The solder layer 43 is pressed on the electrode 42 of the monolithic substrate 41 . Next, as shown in FIG. 5 , the bonding device 80 raises the temperature of the semiconductor wafer 45 and the monolithic substrate 41 to the bonding temperature T2 above the melting temperature of the solder, and thermally fuses the gold of the gold bump 46 and the solder layer 43 simultaneously, Gold solder fusion bonding is performed. In addition, molten underfill 44 is filled between the upper surface of the individual substrate 41 and the lower surface of the semiconductor wafer 45 .

Then, the bonding device 80 sends air into the cooling passage built in the bonding head 35 to lower the temperature of the semiconductor wafer 45 and the individual substrate 41 to solidify the molten metal. At this time, the underfill 44 between the upper surface of the single-piece substrate 41 and the lower surface of the semiconductor wafer 45 is cured. Thereby, joining ends (joining step).

As described above, in the bonding system 90 of the embodiment, the entire surface of the individual substrate 41 is held by the upper surface 11a in the region of the recess 13 of the susceptor 11 , and is adsorbed and fixed to the upper surface 11a through the through hole 12 . Therefore, even if the size of the semiconductor chip 45 is substantially the same as that of the monolithic substrate 41 , sufficient heat and pressing load can be applied to the monolithic substrate 41 and the semiconductor chip 45 , and the semiconductor chip 45 can be stably bonded to the monolithic substrate 41 .

In addition, for the base 11, the upper flatness value of the upper surface 11a, the lower flatness value of the lower surface 11b, and the deviation of the thickness are specified, so it can be fixed directly with the mounting surface 31a of the platform 31. The same levelness as in the case of the sheet substrate 41 holds the single sheet substrate 41 above the susceptor 11 . Thereby, the plurality of gold bumps 46 of the semiconductor wafer 45 can be evenly pressed on the plurality of solder layers 43, and good gold solder fusion bonding can be performed. In particular, when the thickness of the solder layer 43 is as thin as about 10 μm, good gold solder fusion bonding can be performed.

In addition, since the substrate holder 10 has a structure in which the metal positioning member 21 is superimposed on the base 11, which is a plate-shaped ceramic member whose upper surface 11a and lower surface 11b have been ground, it is possible to reduce the The variation in the flatness value and thickness of the base 11 is small, and by making the positioning member 21 whose flatness value is not limited by an inexpensive metal, the processing becomes easy and the cost can be reduced.

Next, the solid line a and the dot chain line b in FIG. 5 will be described. Among the ceramic materials, there are ceramic materials having low thermal conductivity and ceramic materials having higher thermal conductivity. As explained above, the solid line a in FIG. 5 represents the temperature change of the monolithic substrate 41 when the susceptor 11 is made of ceramics with low thermal conductivity, and the chain line b in FIG. The temperature change of the monolithic substrate 41 in the case where the susceptor 11 is made of ceramics is higher.

As shown by the solid line a in FIG. 5 , in the case of a ceramic material with low thermal conductivity, even if the single substrate 41 is heated by the heater of the platform 31, the speed of heat transfer from the platform 31 to the single substrate 41 is also slow. However, it takes time for the temperature of the individual substrate 41 to reach the joining start temperature T1. However, when the semiconductor wafer 45 is heated by the heater built in the bonding head 35, when the heat from the semiconductor wafer 45 enters the individual substrate 41, the heat will not dissipate from the individual substrate 41 to the platform 31, so the temperature from the bonding start temperature T1 to The temperature rise time of the joining temperature T2 is shortened.

Conversely, if the base 11 is made of ceramics with a higher thermal conductivity than the above, the heat transfer speed from the platform 31 to the monolithic substrate 41 is fast, as shown by the dot chain line b, compared with that of the solid line a The time to reach the joining start temperature T1 is shortened. On the other hand, of the heat flowing from the semiconductor wafer 45 into the single substrate 41, more heat is dissipated from the susceptor 11 to the platform 31, so the time for the temperature to rise from the bonding start temperature T1 to the bonding temperature T2 is shorter than that shown by the solid line a. The case is slower.

Therefore, by preparing a plurality of substrate holders 10 in which the thermal conductivity of the ceramic material constituting the susceptor 11 is appropriately selected, only the substrate holder 10 is replaced to perform bonding matching the characteristics of the single substrate 41 or semiconductor wafer 45 .

Next, a structure of a substrate holder 100 according to another embodiment will be described with reference to FIG. 6 . The substrate holder 100 includes a base 111 and a positioning member 121 . The positioning member 121 is a metal plate-shaped member formed with a plurality of openings 122 into which the single substrate 41 is inserted, and is superimposed on the base 111 . Pins 124 protruding downward are provided at both ends of the positioning member 121 . The pin 124 is engaged with the outer surface of the base 11 to define the position of the positioning member 121 relative to the base 111 .

Through-holes 112 penetrating through the upper surface 111 a and the lower surface 111 b are respectively provided in a plurality of regions of the susceptor 111 on which the single substrate 41 is placed. Grooves 115 connecting the plurality of through holes 112 in the lateral direction are provided on the lower surface 111b.

As shown in FIG. 6, if the substrate holder 100 is placed on the stage 31 in such a manner that the groove 115 of the substrate holder 100 covers the common suction hole 34 provided on the mounting surface 31a of the stage 31, and When the common suction hole 34 is vacuumed, each through hole 112 is vacuumed, and the single substrate 41 can be sucked and fixed on the upper surface 111 a of the base 111 , and the base 111 can be sucked and held on the loading surface 31 a of the platform 31 at the same time.

With this configuration, even when the number of common suction holes 34 provided on the mounting surface 31a of the platform 31 is small, or the positions of the through holes 12 and the second suction holes 33 of the susceptor 11 as shown in FIG. In the case of misalignment, the base 111 and the single substrate 41 can also be sucked and fixed at the same time. Here, as long as at least one common adsorption hole 34 is provided on the mounting surface 31 a of the table 31 , there may be one or a plurality of them.

10, 100: Substrate holder 11, 111: base 11a, 111a: upper surface 11b, 111b: lower surface 12, 112: through hole 13: Concave 14: hole 21, 121: positioning components 22, 122: opening 23, 124: pin 31: Platform 31a: loading surface 32: The first adsorption hole 33: The second adsorption hole 34: common adsorption hole 35:Joint head 36: Joining tool 41: Monolithic substrate 42: electrode 43: Solder layer 44: Underfill 45: Semiconductor wafer 46: Gold bump 50: Carrying table 80: Engagement device 90: Engagement system 115: slot T1: Joining start temperature T2: junction temperature a: solid line b: a little chain line

FIG. 1 is a perspective view showing a bonding system according to an embodiment. FIG. 2 is a perspective view showing a substrate holder of the bonding system shown in FIG. 1 . Fig. 3 is an exploded sectional view of the substrate holder shown in Fig. 2 . 4 is an elevational view showing a state in which a semiconductor wafer is bonded to a single substrate held in a concave portion of a substrate holder using the bonding system according to the embodiment. 5 is a graph showing temporal changes in the temperature of the single substrate when the semiconductor wafer is bonded to the single substrate by the bonding system shown in FIG. 1 . Fig. 6 is an exploded sectional view of another substrate holder.

10: Substrate holder

11: base

11b: lower surface

13: Concave

21: Positioning components

31: Platform

31a: loading surface

32: The first adsorption hole

33: The second adsorption hole

41: Monolithic substrate

45: Semiconductor wafer

80: Engagement device

90: Engagement system

Claims (16)

A substrate holder that holds a single-piece substrate for bonding a semiconductor wafer, and is characterized by comprising: a plate-shaped base, the single substrate is placed on the upper surface, and the lower surface is adsorbed and fixed on the loading surface of the platform of the bonding device; and The positioning member is provided on the susceptor, and regulates the position of the single-piece substrate placed on the upper surface of the susceptor. The substrate holder as claimed in claim 1, wherein The base is provided with a through hole passing through the thickness direction in the area where the single substrate is placed, The through hole communicates with an adsorption hole provided on the stage of the bonding device when the lower surface is adsorbed and fixed to the mounting surface of the stage of the bonding device. The substrate holder as claimed in claim 1, wherein The base mounts a plurality of the monolithic substrates on the upper surface, and a plurality of through holes penetrating in the thickness direction are respectively provided in each area where each of the monolithic substrates is placed, Each of the through holes communicates with at least one suction hole provided on the stage of the bonding device when the lower surface is adsorbed and fixed to the mounting surface of the stage of the bonding device. The substrate holder as claimed in claim 3, wherein The bottom surface of the base is provided with grooves connecting the plurality of through holes. The substrate holder according to any one of claim 1 to claim 4, wherein For the base, the upper flatness value of the upper surface and the lower flatness value of the lower surface are less than or equal to a reference flatness value, and the deviation of the thickness is less than or equal to a reference deviation. The substrate holder according to any one of claim 1 to claim 5, wherein The positioning member is a plate-shaped member formed with at least one opening into which the single-piece substrate is inserted, and is superimposed on the base so that the opening forms a recess defining a mounting position of the single-piece substrate. superior. The substrate holder according to any one of claim 1 to claim 6, wherein The base is a ceramic member with the upper surface and the lower surface ground, The positioning member is made of metal. A bonding system includes: a bonding device for bonding a semiconductor wafer to a single substrate; and a substrate holder for holding the single substrate, and the bonding system is characterized in that, The bonding device includes: a platform for absorbing and fixing the substrate holder on the loading surface, The substrate holder includes: a plate-shaped base, on which the single substrate is placed on the upper surface, and the lower surface is adsorbed and fixed on the loading surface of the platform; and The positioning member is provided on the susceptor, and regulates the position of the single-piece substrate placed on the upper surface of the susceptor. The joining system of claim 8, wherein The platform includes adsorption holes, The base is provided with a through hole passing through the thickness direction in the area where the single substrate is placed, When the lower surface is adsorbed and fixed on the loading surface, the through hole communicates with the adsorption hole provided on the platform, and the single substrate is adsorbed and fixed on the base. upper surface. The joining system of claim 8, wherein The substrate holder mounts a plurality of the single substrates on the upper surface, The positioning member defines each position of the plurality of individual substrates placed on the upper surface of the susceptor, The platform includes at least one adsorption hole, The base is respectively provided with through holes penetrating through the thickness direction in each area where the plurality of single substrates are placed, Each of the through holes communicates with at least one of the adsorption holes when the lower surface is adsorbed and fixed on the mounting surface, and each of the single-piece substrates is respectively adsorbed and fixed on the upper surface of the base. The joining system of claim 10, wherein The bottom surface of the base is provided with grooves connecting the plurality of through holes. The joining system according to any one of claim 8 to claim 11, wherein For the base, the upper flatness value of the upper surface and the lower flatness value of the lower surface are less than or equal to a reference flatness value, and the deviation of the thickness is less than or equal to a reference deviation. The joining system according to any one of claim 8 to claim 12, wherein The positioning member is a plate-shaped member formed with at least one opening into which the single-piece substrate is inserted, and is superimposed on the base so that the opening forms a recess defining a mounting position of the single-piece substrate. superior. The substrate holder according to any one of claim 8 to claim 13, wherein The base is a ceramic member with the upper surface and the lower surface ground, The positioning member is made of metal. A bonding method for bonding a semiconductor wafer to a single substrate, characterized by comprising: The preparation step is to prepare a substrate holder and a bonding device. The substrate holder includes: a base on which a plurality of the single substrates are placed on the upper surface; and a positioning member arranged on the base and prescribed to place Each position of the plurality of single-piece substrates on the upper surface of the base, and the substrate holder is respectively provided with a hole penetrating in the thickness direction in each area where the plurality of single-piece substrates are placed. through holes, the bonding device includes a platform having at least one adsorption hole, and the semiconductor wafer is pressed against the single substrate and bonded; In the placing step, placing a plurality of the individual substrates on the placing surface of the substrate holder so that each of the through holes communicates with at least one of the adsorption holes, and placing the substrate holder on the the loading surface of the platform; In the suction-fixing step, vacuuming at least one of the suction holes of the bonding device, suction-fixing the substrate holder on the mounting surface of the platform, and suction-fixing each of the individual substrates on the upper surface of the base; and In the bonding step, sequentially bonding the semiconductor wafer on a plurality of the single substrates. The bonding method according to claim 15, wherein the bonding device includes: a mounting table for mounting a plurality of individual substrates on the mounting surface of the substrate holder, In the placing step, after placing a plurality of individual substrates on the placement surface of the substrate holder using the stage, the substrate holder on which the plurality of individual substrates are placed is transported to On the stage, the conveyed substrate holder is placed on the mounting surface of the stage.

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