TW202312392A - A substrate processing apparatus - Google Patents

Abstract

The present invention provides a substrate processing apparatus. This substrate processing apparatus comprises: a processing chamber that provides a processing space for processing a substrate; a plasma-generating chamber for generating plasma from a process gas, the generated plasma being supplied to the processing space; a diffusion chamber for diffusing, to the processing space, the plasma generated in the plasma-generating chamber; a baffle which is installed on the upper end of the processing chamber and has a plurality of baffle holes; and an air current-guiding member which is provided inside the diffusion chamber and guides the flow direction of the plasma. The air current-guiding member includes a guide body by which the flow direction of the plasma partially changes. The guide body includes an upper guide body which combines with a side wall of the diffusion chamber to form a first passage, and a lower guide body which is disposed below the upper guide body and combines with the upper guide body to form a second passage.

Description

Substrate processing equipment

The present invention relates to substrate processing equipment, and more particularly, to a substrate processing equipment using plasma to process a substrate.

Plasma refers to a gaseous state composed of ions or free radicals and electrons and ionized. Plasma is generated by extremely high temperature or strong electric field or high frequency electromagnetic field (RF Electromagnetic Fields). Semiconductor device manufacturing processes include ashing or etching processes that use plasma to remove thin films on substrates. The ashing or etching process is performed by the collision or reaction of ions and radical particles contained in the plasma with the thin film on the substrate.

Typically, plasma is formed in the upper region of the chamber and flows into the space where the substrate W is processed. A baffle for uniform distribution of plasma is provided in the upper part of the processing space. Due to the structural features of the plasma chamber, the plasma is supplied centrally to the center of the processing space. Therefore, the plasma is concentrated to the central area of the baffle corresponding to the center of the processing space. The central area of the baffle is thermally deformed due to excessive plasma concentration. This shortens the baffle replacement cycle and increases maintenance costs.

In addition, particles are generated during the deformation of the baffle, and the generated particles are deposited on the upper part of the substrate located in the processing space by means of the gas flow containing plasma inside the chamber. The particles deposited on the upper portion of the substrate cause a problem of reducing the efficiency of an ashing or etching process on the substrate.

[Technical Issues]

It is an object of the present invention to provide a substrate processing apparatus capable of minimizing plasma concentration to an area of a baffle.

In addition, the object of the present invention is to provide a substrate processing apparatus which can minimize deformation of the baffle due to plasma.

In addition, it is an object of the present invention to provide a substrate processing apparatus that minimizes the occurrence of particles above the baffle.

In addition, it is an object of the present invention to provide a substrate processing apparatus capable of directing a gas flow containing particles to an edge region of a processing space.

The problems to be solved by the present invention are not limited to the above-mentioned problems, and those not mentioned can be clearly understood from the present specification and drawings by those skilled in the art to which the present invention pertains. [Technical solutions]

The invention provides an apparatus for processing a substrate. The apparatus for processing a substrate may include: a processing chamber that provides a processing space for processing a substrate; a plasma generation chamber that generates plasma supplied from a process gas to the processing space; a diffusion chamber that uses The aforementioned plasma generated by the aforementioned plasma generation chamber diffuses into the aforementioned processing space; the baffle plate, the aforementioned baffle plate is installed on the upper end of the aforementioned processing chamber, and is formed with a plurality of baffle plate holes; and the airflow guide member, the aforementioned airflow guide member is equipped in Inside the aforementioned diffusion chamber, guide the flow direction of the aforementioned plasma; and, the aforementioned airflow guiding member may include a guide body that partially changes the flow direction of the aforementioned plasma; the aforementioned guide body may include: an upper guide body, the aforementioned upper guide body and the aforementioned diffuser The side walls of the chamber are combined to form a first passage; and a lower guide body, which is located under the upper guide body, is combined with the upper guide body to form a second passage.

According to an embodiment, the lower guide body may include: a bottom, the bottom extending horizontally from the lower end of the side wall of the diffusion chamber toward the center of the diffusion chamber; and an inclined portion, the slope extending from the bottom toward the center of the diffusion chamber It is equipped with an upward slope.

According to an embodiment, a bottom hole penetrating the bottom in an up-down direction may be formed in the bottom.

According to an embodiment, the aforementioned upper guide body may be provided parallel to the side walls of the aforementioned diffusion chamber.

According to an embodiment, the aforementioned inclined portion may be provided parallel to the side walls of the aforementioned diffusion chamber.

According to an embodiment, the air flow guide member may further include a guide ring member configured in a ring shape to guide the plasma airflow flowing through the first passage and the second passage to the processing space, and The upper end of the guide ring member may be in line contact with the inner surface of the upper guide body, and the lower end of the guide ring member may be in line contact with the upper end of the inclined portion.

According to an embodiment, an inflow hole may be formed on a side surface of the guide ring member along a circumferential direction, and the inflow hole allows the plasma gas flow flowing in through the second passage to flow in.

According to an embodiment, the lower face of the aforementioned guide ring member may be open.

According to an embodiment, at least one outflow hole through which the plasma gas flow flowing in from the inflow hole flows out may be formed on the lower surface of the guide ring member.

According to an embodiment, the diameters of the aforementioned bottom hole and the aforementioned outflow hole may be smaller than the aforementioned baffle hole.

In addition, the present invention provides an apparatus for processing a substrate. The apparatus for processing a substrate may include: a processing chamber that provides a processing space for processing a substrate; a plasma generation chamber that generates plasma supplied from a process gas to the processing space; a diffusion chamber that uses The aforementioned plasma generated by the aforementioned plasma generation chamber diffuses into the aforementioned processing space; the baffle plate, the aforementioned baffle plate is installed on the upper end of the aforementioned processing chamber, and a plurality of baffle plate holes are formed; and the airflow guiding member is equipped on the aforementioned airflow guiding member The interior of the diffusion chamber is used to guide the flow direction of the aforementioned plasma; moreover, the aforementioned airflow guiding member may include a guide ring member, and the aforementioned guide ring member is provided in a ring shape and installed inside the aforementioned diffusion chamber.

According to an embodiment, an inflow hole through which the plasma gas flow flows may be formed on the side surface of the guide ring member along the circumferential direction of the side surface.

According to an embodiment, the lower face of the aforementioned guide ring member may be open.

According to an embodiment, at least one outflow hole may be formed on the lower surface of the guide ring member, and the outflow hole allows the plasma gas flow flowing in from the inflow hole to flow out.

According to an embodiment, the aforementioned airflow guide member may include a guide body, and the aforementioned guide body may include: an upper guide body, the aforementioned upper guide body is combined with the side wall of the aforementioned diffusion chamber to form a first passage, and guides the aforementioned electric current flowing in the aforementioned diffusion chamber. A part of the slurry; and a lower guide body, the lower guide body is located at the lower part of the upper guide body, and is combined with the upper guide body to form a second passage, and guides the plasma guided from the first passage to the second passage through the second passage. the aforementioned inflow hole.

According to an embodiment, the lower guide body may include: a bottom, the bottom extending horizontally from the lower end of the side wall of the diffusion chamber toward the center of the diffusion chamber; and an inclined portion, the slope extending from the bottom toward the center of the diffusion chamber It is equipped with an upward slope.

According to an embodiment, a bottom hole penetrating through the bottom in an up-down direction may be formed in the bottom.

According to one embodiment, the upper end of the guide ring member can be in line contact with the inner surface of the upper guide body, and the lower end of the guide ring member can be in line contact with the upper end of the inclined portion.

According to an embodiment, the aforementioned upper guide body and the aforementioned inclined portion may be provided parallel to the side walls of the aforementioned diffusion chamber.

According to an embodiment, the aforementioned diffusion chamber can be equipped in the shape of an inverted funnel. [Invention effect]

According to an embodiment of the present invention, the concentration of plasma in a region of the baffle can be minimized.

In addition, according to an embodiment of the present invention, deformation of the baffle due to plasma can be minimized.

In addition, according to an embodiment of the present invention, generation of particles above the baffle can be minimized.

Furthermore, according to an embodiment of the invention, the air flow containing particles may be directed to an edge region of the processing space.

The effects of the present invention are not limited to the above-mentioned effects, and the unmentioned effects can be clearly understood by those skilled in the art to which the present invention pertains from the specification and drawings.

Embodiments of the present invention are described in more detail below with reference to the accompanying drawings. The embodiments of the present invention can be modified into various forms, and it should not be interpreted that the scope of the present invention is limited to the embodiments described below. This embodiment is provided in order to more fully describe the present invention to those of ordinary skill in the art. Therefore, the shapes of the constituent elements in the drawings are exaggerated to emphasize clearer descriptions.

Embodiments of the present invention will be described in detail below with reference to FIG. 1 to FIG. 8 .

FIG. 1 is a diagram schematically showing a substrate processing apparatus of the present invention. Referring to FIG. 1 , the substrate processing equipment 1 has an equipment front end module (Equipment Front End Module; EFEM) 20 and a processing module 30 . The equipment front-end module 20 and the processing module 30 are arranged along one direction.

The device front-end module 20 has a load port 200 and a transfer frame 220 . The loading port 200 is disposed in front of the device front-end module 20 along the first direction 2 . The load port 200 has a plurality of support portions 202 . Each supporting part 202 is arranged in a row along the second direction 4 , and is placed with a carrier C (such as a slide cassette, FOUP, etc.) for accommodating the substrate W to be provided to the process and the substrate W that has been processed by the process. On the carrier C, the substrate W to be supplied to the process and the substrate W that has been processed by the process are accommodated. The transfer frame 220 is disposed between the loading port 200 and the processing module 30 . The transfer frame 220 includes a first transfer robot 222 disposed inside and transfers the substrate W between the loading port 200 and the processing module 30 . The first transfer robot 222 moves along the transfer track 224 provided in the second direction 4 to transfer the substrate W between the carrier C and the processing module 30 .

The processing module 30 includes a load lock chamber 300 , a transfer chamber 400 and a process chamber 500 .

The load lock chamber 300 is disposed adjacent to the transfer frame 220 . As an example, the load lock chamber 300 may be disposed between the transfer chamber 400 and the front-end module 20 of the equipment. The load lock chamber 300 provides a waiting space for the substrate W supplied to the process before being transferred to the process chamber 500 or the processed substrate W before being transferred to the front-end module 20 of the equipment.

The transfer chamber 400 is disposed adjacent to the load lock chamber 300 . The transfer chamber 400 has a polygonal body when viewed from above. For example, the transfer chamber 400 may have a pentagonal body when viewed from above. On the outside of the main body, a load lock chamber 300 and a plurality of process chambers 500 are arranged along the circumferential direction of the main body. A passage (not shown) for the substrate W to enter and exit is formed on each side wall of the main body, and the passage connects the transfer chamber 400 with the load lock chamber 300 or the process chamber 500 . Each passage is provided with a door (not shown) that opens and closes the passage to hermetically seal the interior. In the inner space of the transfer chamber 400 , a second transfer robot 420 for transferring the substrate W between the load lock chamber 300 and the process chamber 500 is arranged. The second transfer robot 420 transfers the unprocessed substrate W waiting in the load lock chamber 300 to the process chamber 500 , or transfers the processed substrate W to the load lock chamber 300 . Furthermore, in order to sequentially supply the substrate W to the plurality of process chambers 500 , the substrate W is transferred between the process chambers 500 . For example, as shown in FIG. 1 , when the transfer chamber 400 has a pentagonal body, load lock chambers 300 are arranged on the side walls adjacent to the front end module 20 of the equipment, and process chambers 500 are continuously arranged on the remaining side walls. . The shape of the transfer chamber 400 is not limited thereto, and can be provided in various shapes according to the required process modules.

The process chamber 500 is arranged along the circumference of the transfer chamber 400 . The process chamber 500 can be equipped with multiple. The processing of the substrate W is performed in each processing chamber 500 . The process chamber 500 receives the transferred substrate W from the second transfer robot 420 and performs process processing, and provides the processed substrate W to the second transfer robot 420 . The processing performed in each processing chamber 500 may be different from each other. The process chamber 500 for performing the plasma treatment process will be described in detail below.

FIG. 2 is a diagram schematically illustrating a process chamber for performing a plasma treatment process in the process chamber of the substrate processing equipment of FIG. 1 .

Referring to FIG. 2 , the process chamber 500 performs a predetermined process on the substrate W by using plasma. As an example, the thin film on the substrate W may be etched or ashed. The thin film can be various types of films such as polysilicon film, oxide film, and silicon nitride film. The thin film may be a natural oxide film or a chemically generated oxide film as appropriate.

The process chamber 500 may include a processing chamber 520 , a plasma generation chamber 540 , a diffusion chamber 560 and an exhaust chamber 580 .

The processing chamber 520 places the substrate W and provides a processing space 5200 for processing the substrate W. In the plasma generation chamber 540 described later, the process gas is discharged to generate plasma (Plasma), which is supplied to the processing space 5200 of the processing chamber 520 . Process gas remaining in the processing chamber 520 and/or reaction by-products and particles generated during the processing of the substrate W are exhausted to the outside through an exhaust chamber 580 described later. Therefore, the pressure inside the processing chamber 520 can be maintained at the set pressure.

The processing chamber 520 may include a housing 5220 , a support unit 5240 , an exhaust baffle 5260 , and a baffle 5280 . Inside the housing 5220, there may be a processing space 5200 in which a substrate processing process is performed. The outer walls of the housing 5220 may be equipped with conductors. As an example, the outer wall of the housing 5220 may be made of a metal material including aluminum. The housing 5220 may have an open top and an opening (not shown) formed on a side wall. The substrate W enters and exits the inside of the housing 5220 through the opening. The opening can be opened and closed by means of an opening and closing member such as a door (not shown). In addition, an exhaust hole 5222 is formed on the bottom surface of the casing 5220 . The process gas and/or byproducts in the processing space 5200 can be discharged to the outside of the processing space 5200 through the exhaust hole 5222 . The exhaust hole 5222 can be connected to a configuration including an exhaust chamber 580 described later.

The supporting unit 5240 supports the substrate W in the processing space 5200 . The support unit 5240 may include a support plate 5242 and a support shaft 5244 .

The support plate 5242 may support the substrate W in the processing space 5200 . The support plate 5242 may be supported by a support shaft 5244 . The support plate 5242 can be connected to an external power source, and static electricity can be generated by the applied power. The electrostatic attraction of the generated static electricity can fix the substrate W on the supporting unit 5240 .

The support shaft 5244 can move the object. For example, the support shaft 5244 can move the substrate W in an up and down direction. As an example, the support shaft 5244 may be combined with the support plate 5242 to lift the support plate 5242 to move the substrate W.

The exhaust baffle 5260 allows the plasma to be uniformly discharged from the processing space 5200 area by area. The exhaust baffle 5260 has a ring shape when viewed from above. The exhaust baffle 5260 may be located between the inner sidewall of the casing 5220 and the support unit 5240 in the processing space 5200 . A plurality of exhaust holes 5262 are formed on the exhaust baffle 5260 . The exhaust holes 5262 may be provided facing up and down. The exhaust holes 5262 may be equipped with holes extending from the upper end of the exhaust baffle 5260 to the lower end. The exhaust holes 5262 may be arranged at intervals along the circumferential direction of the exhaust baffle 5260 .

The baffle 5280 can be disposed between the processing chamber 520 and the plasma generation chamber 540 . The baffle 5280 can be disposed between the processing chamber 520 and the diffusion chamber 560 . The baffle 5280 can be disposed between the support unit 5240 and the diffusion chamber 560 . The baffle 5280 can be disposed on the upper part of the supporting unit 5240 . As an example, the baffle plate 5280 may be disposed on the upper end of the processing chamber 520 .

The baffle 5280 can uniformly transmit the plasma generated in the plasma generation chamber 540 to the processing space 5200 . A barrier hole 5282 may be formed on the barrier 5280 . A plurality of baffle holes 5282 can be provided. The baffle holes 5282 may be provided spaced apart from each other. The baffle hole 5282 can pass through the baffle 5280 in the up-down direction. The baffle hole 5282 can function as a channel for the plasma generated in the plasma generating chamber 540 to flow into the processing space 5200 .

The baffle 5280 may have a plate shape when viewed from above. The baffle 5280 may have a disc shape when viewed from above. When the baffle plate 5280 is viewed from the end face, its upper height can be higher and higher from the edge area to the central area. When the baffle plate 5280 is viewed from the end surface, its upper surface may have a shape that is more and more inclined upward from the edge area to the central area. Therefore, the plasma generated in the plasma generation chamber 540 can flow along the inclined end surface of the baffle plate 5280 toward the edge region of the processing space 5200 . Unlike the above example, the end surface of the baffle 5280 may not be inclined. As an example, the baffle 5280 may be provided in a disc shape with a predetermined thickness.

The plasma generation chamber 540 may excite process gas supplied from a gas supply unit 5440 described later to generate plasma, and supply the generated plasma to the processing space 5200 .

The plasma generation chamber 540 may be located at an upper portion of the processing chamber 520 . The plasma generation chamber 540 may be located above the casing 5220 and the diffusion chamber 560 described later. The processing chamber 520 , the diffusion chamber 560 and the plasma generation chamber 540 may be sequentially arranged from the ground along the third direction 6 perpendicular to the first direction 2 and the second direction 4 .

The plasma generation chamber 540 may include a plasma chamber 5420 , a gas supply unit 5440 and a power application unit 5460 .

The plasma chamber 5420 may have a shape with an open top and bottom. The plasma chamber 5420 may have a cylindrical shape with an open top and bottom. The plasma chamber 5420 may have a cylindrical shape with an open top and bottom. Upper and lower ends of the plasma chamber 5420 may be formed with openings. The plasma chamber 5420 may have a plasma generation space 5422 . The plasma chamber 5420 may be made of aluminum oxide Al2O3.

The top of the plasma chamber 5420 can be sealed by a gas supply port 5424 . The gas supply port 5424 can be connected to a gas supply unit 5440 described later. Process gas can be supplied to the plasma generation space 5422 through the gas supply port 5424 . The process gas supplied to the plasma generating space 5422 can be uniformly distributed to the processing space 5200 through the baffle holes 5282 .

The gas supply unit 5440 may supply process gas. The gas supply unit 5440 can be connected to the gas supply port 5424 . The process gas supplied by the gas supply unit 5440 may include Fluorine and/or Hydrogen.

The power application unit 5460 applies high-frequency power to the plasma generation space 5422 . The power applying unit 5460 may be a plasma source for exciting process gas in the plasma generating space 5422 to generate plasma. The power applying unit 5460 may include an antenna 5462 and a power source 5464 .

Antenna 5462 may be an inductively coupled plasmonic (ICP) antenna. The antenna 5462 may be provided in a coil shape. The antenna 5462 may wrap multiple turns around the plasma chamber 5420 on the outside of the plasma chamber 5420 . The antenna 5462 may be wound around the plasma chamber 5420 in a helical pattern on the outside of the plasma chamber 5420 for multiple turns.

The antenna 5462 may be wound around the plasma chamber 5420 at a region corresponding to the plasma generating space 5422 . One end of the antenna 5462 may be provided at a height corresponding to the upper area of the plasma chamber 5420 when viewed from the main cross section of the plasma chamber 5420 . The other end of the antenna 5462 may be arranged at a height corresponding to the lower area of the plasma chamber 5420 when viewed from the main section of the plasma chamber 5420 .

A power supply 5464 may apply power to the antenna 5462. The power supply 5464 can apply high frequency alternating current to the antenna 5462 . The high-frequency alternating current applied to the antenna 5462 can form an induced electric field in the plasma generating space 5422 . The process gas supplied into the plasma generating space 5422 can obtain the energy required for ionization from the induced electric field and transform into a plasma state.

The power supply 5464 can be connected to one end of the antenna 5462 . The power source 5464 may be connected to one end of the antenna 5462 provided at a height corresponding to the upper region of the plasma chamber 5420 . In addition, the other end of the antenna 5462 may be grounded. The other end of the antenna 5462 provided at a height corresponding to the lower region of the plasma chamber 5420 may be grounded. But not limited thereto, one end of the antenna 5462 can be grounded, and the power supply 5464 can be connected to the other end of the antenna 5462 .

The diffusion chamber 560 can diffuse the plasma generated in the plasma generation chamber 540 into the processing space 5200 . The diffusion chamber 560 may have a diffusion chamber 5620 and an air flow guiding member 6000 .

The diffusion chamber 5620 can diffuse the plasma generated in the plasma generation chamber 540 into the processing space 5200 . Diffusion chamber 5620 has an interior space. The internal space of the diffusion chamber 5620 may be equipped with an airflow guide member 6000 described later. Diffusion chamber 5620 is located in the lower portion of plasma chamber 5420 . Diffusion chamber 5620 may be located between housing 5220 and plasma chamber 5420 . The housing 5220, the diffusion chamber 5620, and the plasma chamber 5420 may be sequentially arranged along the third direction 6 from the ground.

The inner perimeter of the diffusion chamber 5620 may be non-conductive. As an example, the inner peripheral surface of the diffusion chamber 5620 may be made of quartz (Quartz). The diffusion chamber 5620 may include a diffusion portion 5624 and a connection portion 5626 .

The diffuser 5624 may extend downward from the plasma chamber 5420 . The diffusion part 5624 can extend downward from the plasma chamber 5420 to the connection part 5626 .

The diffusion part 5624 may have a shape in which upper and lower parts are opened. Openings may be formed at upper and lower ends of the diffusion part 5624 . The diffuser 5624 may have an inverted funnel shape. As an example, the diffuser 5624 may be configured in a conical shape. The upper end opening diameter of the diffusion part 5624 may be configured to be smaller than the lower end opening diameter of the diffusion part 5624 . The diffuser 5624 may be provided with an increasing diameter from the upper end to the lower end. The diameter of the opening provided at the upper end of the diffusion part 5624 may have a diameter corresponding to the diameter of the lower surface of the plasma chamber 5420 .

The connection part 5626 can connect the housing 5220 and the diffusion part 5624 . The connection part 5626 may be located at a lower part of the diffusion part 5624 . The connection part 5626 can be disposed between the shell 5220 and the diffusion part 5624 . The connection part 5626 may include an upper wall 5626a and a lower wall 5626b.

The upper wall 5626 a extends from the lower end of the diffuser 5624 . The upper wall 5626 a may extend toward a direction away from the center of the opening formed at the lower end of the diffusion part 5624 . The lower wall 5626b can extend downward from the side end of the upper wall 5626a. The lower wall 5626b may be connected to the upper end of the housing 5220 . The diffuser 5624 and the casing 5220 are connected by the connection part 5626, so that the processing space 5200 can be sealed from the outside.

FIG. 3 is a perspective view schematically showing the airflow guiding member of FIG. 2 . Hereinafter, referring to FIG. 2 and FIG. 3 , the air flow guide member according to the embodiment of the present invention will be described in detail.

The air flow guide member 6000 is located inside the diffusion chamber 560 . The air flow guide member 6000 may be provided inside the diffusion chamber 5620 . The air flow guide member 6000 may be located on an upper portion of the baffle 5280 . The airflow guide member 6000 may be disposed on the upper portion of the baffle 5820 to face the baffle 5820 . The gas flow guide member 6000 may guide a flow direction of plasma generated in the plasma generation chamber 540 . The airflow guide member 6000 may guide a flow direction of an airflow containing particles generated by plasma.

The airflow guide member 6000 may include a guide body 6200 and a guide ring member 6800 . The guide 6200 can change part of the flow direction of the plasma generated in the plasma generation chamber 540 . The guide 6200 can change part of the flow direction of the airflow containing the particles generated by the plasma.

The guide body 6200 may include an upper guide body 6400 and a lower guide body 6600 . The upper guide body 6400 is installed inside the diffusion chamber 5620 . The upper guide body 6400 may be roughly equipped in an inverted funnel shape. The upper guide body 6400 may be provided in a substantially circular shape when viewed from above. The upper guide body 6400 may have a top 6420 and a first slope 6440 .

The top 6420 may be provided substantially in the shape of a circular plate when viewed from above. The top 6420 may be located in a region including a central region of the diffusion chamber 5620 when viewed from above. As an example, the top 6420 may have the same diameter as the opening formed at the lower end of the diffusion chamber 5620 when viewed from above.

The first inclined part 6440 may generally have a disc shape in which a region including a center is open when viewed from above. The first inclined part 6440 may be formed extending from the top 6420 . An upper end of the first inclined part 6440 may be connected with a side end of the top 6420 . The upper end of the first inclined part 6440 may make surface contact along the circumferential direction of the top 6420 . The first inclined parts 6440 may be spaced along a direction from the sidewall of the diffusion chamber 5620 toward the center of the diffusion chamber 5620 .

The first inclined part 6440 may be obliquely formed. The first inclined part 6440 may be configured to have a larger diameter from the upper end to the lower end. As an example, the first slope 6440 may have the same slope as the diffusion chamber 5620 . Therefore, the first inclined part 6440 may be parallel to the sidewall of the diffusion chamber 5620 . But not limited thereto, the slope of the first inclined part 6440 and the slope of the diffusion chamber 5620 may be configured differently. The first inclined portion 6440 can be in line contact with a guide ring member 6800 described later. As one example, an inner surface of the first inclined portion 6440 may make line contact with an upper end portion of the guide ring member 6800 . A lower end of the first inclined part 6440 may be located above a lower end of the diffusion chamber 5620 . The top 6420 and the first inclined part 6440 may be integrally formed.

The upper guide body 6400 may be combined with the diffusion chamber 5620 to form the first passage P1. The upper guide body 6400 may be combined with the sidewall of the diffusion chamber 5620 to form the first passage P1. As an example, the first inclined part 6440 may be combined with the sidewall of the diffusion chamber 5620 to form the first passage P1. The first passage P1 functions as a passage for the plasma generated in the plasma generation chamber 540 to flow. The first passage P1 functions as a passage through which an air flow containing particles generated during plasma generation flows.

The lower guide body 6600 is installed inside the diffusion chamber 5620 . The lower guide body 6600 may be located under the upper guide body 6400 . The lower guide body 6600 may be provided in a substantially circular shape when viewed from above. The lower guide body 6600 may include a bottom 6620 and a second slope 6640 .

The bottom 6620 may extend from the sidewalls of the diffusion chamber 5620 toward the center of the diffusion chamber 5620 . The bottom 6620 may extend in a horizontal direction from the lower end of the sidewall of the diffusion chamber 5620 toward the center of the diffusion chamber 5620 . A bottomed hole 6622 may be formed in the bottom 6620 . Bottom hole 6622 can be equipped with multiple. The bottom hole 6622 can pass through the bottom 6620 along the up-down direction. The diameter of the bottom hole 6622 may be configured to be smaller than the diameter of the baffle hole 5282 .

The second inclined part 6640 may extend from the bottom 6620 . The second inclined part 6640 may be formed more and more inclined from the bottom 6620 toward the center of the diffusion chamber 5620 . As one example, the second inclined part 6640 may be formed to be more and more inclined upward from the bottom 6620 toward the center of the diffusion chamber 5620 . The second inclined part 6640 may be configured to have a larger diameter from the lower end to the upper end. As an example, the second slope 6640 may be provided with the same slope as the sidewall of the diffusion chamber 5620 . Therefore, the second inclined part 6640 may be parallel to the sidewall of the diffusion chamber 5620 . But not limited thereto, the slope of the second inclined part 6640 and the slope of the diffusion chamber 5620 may be configured differently.

The upper end of the second inclined portion 6640 may be in contact with a guide ring member 6800 described later. As one example, an upper end of the second inclined portion 6640 may make line contact with a lower end portion of the guide ring member 6800 . An upper end of the second inclined part 6640 may be located higher than a lower end of the first inclined part 6440 . The bottom 6620 and the second inclined part 6640 may be integrally formed.

The lower guide body 6600 may be combined with the upper guide body 6400 to form the second passage P2. The lower guide body 6600 may be combined with the first inclined part 6440 to form the second passage P2. As an example, the outer surface of the second inclined portion 6640 and the inner surface of the first inclined portion 6440 may be combined to form the second passage P2.

The second passage P2 functions as a passage for the flow of the gas flow including the plasma guided by the first passage P1 and/or the particles formed during the generation of the plasma. The second passage P2 functions as a passage for guiding the plasma flow flowing in through the first passage P1 to the inflow hole 6820 of the guide ring member 6800 described later. As an example, part of the plasma flow passing through the first passage P1 flows out to the bottom hole 6622 described later, and the other part flows into the second passage P2.

FIG. 4 is a diagram schematically showing a state in which the guide ring member of FIG. 2 is viewed from below. The guide ring member of the embodiment of the present invention will be described in detail below with reference to FIGS. 2 to 4 .

The guide ring member 6800 may guide the plasma gas flow flowing through the first passage P1 and the second passage P2 to the processing space 5200 . The guide ring member 6800 may guide the gas flow containing particles flowing through the first passage P1 and the second passage P2 to an edge region of the processing space 5200 . The guide ring member 6800 may be provided substantially in a ring shape. The guide ring member 6800 may be provided in a ring shape having a predetermined thickness. As one example, the guide ring member 6800 may be provided in a ring shape with upper and lower portions blocked. For example, the guide ring member 6800 may be provided in a ring shape having a space inside.

Guide ring member 6800 may be located inside diffusion chamber 5620 . The guide ring member 6800 may be located under the upper guide body 6400 . The guide ring member 6800 may be located above the lower guide body 6600 . As an example, the guide ring member 6800 may be disposed between the upper guide body 6400 and the lower guide body 6600 . The guide ring member 6800 may be in contact with the upper guide body 6400 . For example, the upper end portion of the guide ring member 6800 may make line contact with the inner surface of the first inclined portion 6440 . The guide ring member 6800 may be in contact with the lower guide body 6600 . For example, the lower end of the guide ring member 6800 may be in line contact with the upper end of the second inclined portion 6640 .

An inflow hole 6820 may be formed at a side of the guide ring member 6800 . The inflow hole 6820 may be formed in the second passage P2 formed by combining the upper guide body 6400 and the lower guide body 6600 with each other. A plurality of inflow holes 6820 may be provided. The inflow holes 6820 may be provided circumferentially spaced apart from each other along the side surface of the guide ring member 6800 . Through the second passage P2, the gas flow including plasma and/or particles formed during the generation of the plasma flows into the inflow hole 6820 .

An outflow hole 6840 may be formed under the guide ring member 6800 . The outflow hole 6840 may be provided in plural. The outflow holes 6840 may be provided on the lower surface of the guide ring member 6800 at predetermined intervals from each other. The plasma flow flowing into the inner space of the guide ring member 6800 through the inflow hole 6820 can flow into the processing space 5200 through the outflow hole 6840 . For example, the airflow flowing through the outlet hole 6840 can flow to the edge area of the processing space 5200 along the inclined surface provided in the second inclined portion 6640 . The diameter of the outflow hole 6840 may be configured to be smaller than the diameter of the baffle hole 5282 .

The above-mentioned guide ring member 6800 according to an embodiment of the present invention has been described by taking the case where the outflow hole 6840 is formed on the lower surface as an example, but it is not limited thereto. In addition, in the above-mentioned embodiments of the present invention, the case of the annular configuration in which the upper and lower sides of the guide ring member 6800 are blocked has been described as an example. But not limited thereto, the guide ring member 6800 may be configured in a ring shape with a closed top and an open bottom. Therefore, the plasma flow flowing into the inner space of the guide ring member 6800 through the inflow hole 6820 can flow into the processing space 5200 through the open bottom of the guide ring member 6800 .

Referring again to FIG. 2 , the exhaust chamber 580 may exhaust process gases and impurities inside the processing chamber 520 to the outside. The exhaust chamber 580 can discharge impurities and particles generated during the processing of the substrate W to the outside of the process chamber 500 . The exhaust chamber 580 may exhaust the process gas supplied into the processing space 5200 to the outside. Exhaust chamber 580 may include an exhaust line 5820 and a pressure relief member 5840 . The exhaust line 5820 may be connected to the exhaust hole 5222 formed at the bottom surface of the case 5220 . Exhaust line 5820 may be connected to pressure relief member 5840 that provides pressure relief.

The pressure relief member 5840 may provide pressure relief to the processing space 5200 . The pressure relief member 5840 can discharge plasma, impurities and particles remaining in the processing space 5200 to the outside of the casing 5220 . In addition, the pressure relief member 5840 may provide pressure relief so as to maintain the pressure of the processing space 5200 at a preset pressure. The pressure reducing member 5840 may be a pump. Without limitation, the pressure relief member 5840 may be equipped with known means of providing pressure relief.

FIG. 5 is a diagram schematically illustrating gas flow in the process chamber of FIG. 2 performing a plasma treatment process. Referring to FIG. 5 , the gas flow and/or plasma including impurities or particles formed during plasma generation flows to the first passage P1 formed by combining the diffusion chamber 5620 and the upper guide 6400 . For example, the airflow flows downward along the inclined surface formed in the first inclined portion 6440 . A portion of the airflow passing through the first passage P1 passes through the bottom hole 6622 . The airflow passing through the bottom hole 6622 flows along the inclined surface of the first passage P1, so as to flow to the edge area of the processing space 5200.

Another part of the airflow passing through the first passage P1 flows to the second passage P2 formed by combining the upper guide body 6400 and the lower guide body 6600 with each other. The airflow passing through the second passage P2 flows to the inflow hole 6820 formed in the guide ring member 6800 . The airflow passing through the inflow hole 6820 passes through the outflow hole 6840 via the inner space formed in the guide ring member 6800 . The flow direction of the airflow flowing through the second passage P2 changes while passing through the outflow hole 6840 , and the airflow flows to the edge area of the processing space 5200 by virtue of centrifugal force. In addition, the air flow passing through the outflow hole 6840 flows to the edge region of the processing space 5200 along the inclined surface formed at the second inclined portion 6640 .

According to the above-mentioned embodiment of the present invention, the plasma generated by the plasma generation chamber 540 flows to the first passage P1 formed by combining the diffusion chamber 5620 and the upper guide body 6400 . Part of the plasma passing through the first passage P1 flows to the edge region of the processing space 5200 through the bottom hole 6622 . In addition, another part of the plasma passing through the first passage P1 flows to the second passage P2 formed by combining the upper guide body 6400 and the lower guide body 6600 with each other. The plasma flowing in through the second passage P2 flows to the edge region of the processing space 5200 through the inflow hole 6820 and the outflow hole 6840 in sequence.

Therefore, it is possible to minimize the concentration of the plasma generated in the plasma generation chamber 540 to the area including the central area of the baffle plate 5280 . Concentration of plasma in the baffle 5280 located in the area overlapping with the plasma generation chamber 540 can be minimized when viewed from above. Therefore, thermal deformation of the baffle 5280 that may occur due to plasma concentration in the baffle 5280 can be minimized. By minimizing the thermal deformation of the baffle, the replacement cycle of the baffle is relatively extended, thereby saving maintenance costs. Additionally, by minimizing thermal deformation of the baffle, particles generated during baffle deformation are reduced.

In addition, the concentration of plasma in the central region including the center of the substrate W can be minimized, and the plasma can be uniformly distributed on the substrate W. Therefore, when the substrate W is treated with plasma, the uniformity of the plasma treatment applied to the substrate can be ensured.

In addition, according to an embodiment of the present invention described above, the gas flow containing impurities or particles formed during plasma generation flows to the first passage P1. Part of the airflow passing through the first passage P1 flows to the edge area of the processing space 5200 through the bottom hole 6622 . In addition, another part of the airflow passing through the first passage P1 flows to the second passage P2 formed by combining the upper guide body 6400 and the lower guide body 6600 with each other. The gas flow flowing in through the second passage P2 flows to the edge region of the processing space 5200 through the inflow hole 6820 and the outflow hole 6840 in sequence.

A gas flow containing particles and the like formed during plasma generation may be directed to an edge region of the processing space 5200 . Therefore, flow to the substrate W supported by the support unit 5240 located in the processing space 5200 can be minimized. Deposition of impurities or particles on the upper portion of the substrate W can be minimized. Therefore, the process defect rate caused by the particles deposited on the upper part of the substrate W during the plasma treatment process can be minimized.

FIG. 6 is a diagram schematically illustrating another embodiment of the processing chamber of FIG. 2 for performing a plasma treatment process. FIG. 7 is a perspective view schematically showing the airflow guiding member of FIG. 6 . The following description of the processing chamber according to an embodiment of the present invention is similar to the description of the processing chamber according to the previous embodiment except for the airflow guiding components. Therefore, in order to avoid repetition of content, repeated descriptions will not be repeated below.

Another embodiment of the process chamber will be described in detail below with reference to FIGS. 6 and 7 . The process chamber 500 according to an embodiment of the present invention includes a gas flow guiding member 6000 .

The air flow guide member 6000 is located inside the diffusion chamber 560 . The air flow guide member 6000 may be provided inside the diffusion chamber 5620 . The air flow guide member 6000 may be located on an upper portion of the baffle 5280 . The airflow guide member 6000 may be disposed on the upper portion of the baffle 5280 to face the baffle 5280 . The gas flow guide member 6000 may guide a flow direction of plasma generated in the plasma generation chamber 540 . The airflow guide member 6000 may guide a flow direction of an airflow containing particles generated by plasma.

The airflow guide member 6000 may include a guide body 6200 and a guide ring member 6800 . The guide 6200 can change a part of the flow direction of the plasma generated in the plasma generation chamber 540 . The guide 6200 can change part of the flow direction of the airflow containing the particles generated by the plasma.

The guide body 6200 may include an upper guide body 6400 and a lower guide body 6600 . The upper guide body 6400 is installed inside the diffusion chamber 5620 . The upper guide body 6400 may be provided substantially in a trapezoidal shape when viewed from the main section. The upper guide body 6400 may be provided in a substantially circular shape when viewed from above. The upper guide body 6400 may have a top 6420 , a first slope 6440 and an outer bottom surface 6460 .

The top 6420 may be provided substantially in the shape of a circular plate when viewed from above. The top 6420 may be located in a region including a central region of the diffusion chamber 5620 when viewed from above. As an example, the top 6420 may have the same diameter as the opening formed at the lower end of the diffusion chamber 5620 when viewed from above.

When viewed from above, the first inclined portion 6440 may have a substantially disc shape with an open region including the center. The first inclined part 6440 may be formed extending from the top 6420 . An upper end of the first inclined part 6440 may be connected with a side end of the top 6420 . The upper end of the first inclined portion 6440 may be in surface contact along the circumference of the top portion 6420 . The first inclined parts 6440 may be provided at intervals along a direction from the sidewall of the diffusion chamber 5620 toward the center of the diffusion chamber 5620 .

The first inclined part 6440 may be obliquely formed. The first inclined part 6440 may be configured to have a larger diameter from the upper end to the lower end. As an example, the first slope 6440 may have the same slope as the diffusion chamber 5620 . Therefore, the first inclined part 6440 may be parallel to the sidewall of the diffusion chamber 5620 . But not limited thereto, the slope of the first inclined part 6440 and the slope of the diffusion chamber 5620 may be configured differently. A lower end of the first inclined part 6440 may be located above a lower end of the diffusion chamber 5620 . A lower end of the first inclined part 6440 may be located above a lower end of the diffusion part 5624 . The lower end of the first inclined portion 6440 may be located above the upper end of the lower guide body 6600 described later.

The outer bottom surface portion 6460 may be provided in a substantially circular plate shape when viewed from above. The outer bottom surface 6460 may be located in a region including the central region of the diffusion chamber 5620 when viewed from above. Outer bottom surface 6460 may have a larger diameter than top 6420 . The outer bottom surface 6460 may have a larger area than the top 6420 when viewed from above. The outer bottom surface 6460 may extend from the first inclined portion 6440 . The outer bottom surface 6460 may extend horizontally along a direction from the lower end of the first inclined portion 6440 toward the center of the diffusion chamber 5620 . The outer bottom surface portion 6460 can be in line contact and/or surface contact with a guide ring member 6800 described later. As an example, the lower end of the outer bottom surface 6460 may be in line and/or surface contact with the upper end of the guide ring member 6800 . The top 6420, the first slope 6440, and the outer bottom surface 6460 provided on the upper guide body 6400 may be integrally formed.

The upper guide body 6400 may be combined with the diffusion chamber 5620 to form the first passage P1. The upper guide body 6400 may be combined with the sidewall of the diffusion chamber 5620 to form the first passage P1. As an example, the first inclined part 6440 may be combined with the sidewall of the diffusion chamber 5620 to form the first passage P1. The first passage P1 functions as a passage for the plasma generated in the plasma generation chamber 540 to flow. The first passage P1 functions as a passage for flowing an air flow including particles that may be generated during plasma generation.

The lower guide body 6600 is installed inside the diffusion chamber 5620 . The lower guide body 6600 may be located under the upper guide body 6400 . The lower guide body 6600 may be provided in a substantially circular shape when viewed from above. As an example, the lower guide body 6600 may be provided in an open ring shape including the center when viewed from above.

The lower guide body 6600 may extend from the sidewall of the diffusion chamber 5620 toward the center of the diffusion chamber 5620 . The lower guide body 6600 may extend in a horizontal direction from the lower end of the side wall of the diffusion chamber 5620 toward the center of the diffusion chamber 5620 . The upper end of the lower guide body 6600 may be located above the lower end of the diffusion part 5624 . The upper end of the lower guide body 6600 may be located above the lower end of the guide ring member 6800 described later. The upper end of the lower guide body 6600 may be located below the lower end of the outer bottom surface 6460 .

The lower end of the lower guide body 6600 may be adjacent to the lower end of the diffuser 5624 . As one example, the lower end of the lower guide body 6600 may be provided at the same height from the ground as the lower end of the diffuser 5624 . A lower end of the lower guide body 6600 may be provided adjacent to a lower end of the guide ring member 6800 . As one example, the lower end of the lower guide body 6600 may be located at the same height from the ground as the lower end of the guide ring member 6800 .

A hole 6660 may be formed on the lower guide body 6600 . Holes 6660 may be provided in multiples. The hole 6660 may pass through the lower guide body 6600 in the up-down direction. The diameter of the hole 6660 may be smaller than the diameter of the baffle hole 5282 .

The lower guide body 6600 may be combined with the upper guide body 6400 to form the second passage P2. The lower guide body 6600 may be combined with the outer bottom surface 6460 to form the second passage P2. As an example, the upper surface of the lower guide body 6600 and the lower surface of the outer bottom surface 6460 may be combined with each other to form the second passage P2.

The second passage P2 functions as a passage for a gas flow including plasma guided by the first passage P1 and/or particles formed during generation of the plasma to flow. The second passage P2 functions as a passage for guiding the plasma flow flowing in through the first passage P1 to the inflow hole 6820 of the guide ring member 6800 described later. As an example, part of the plasma gas flow flowing through the first passage P1 flows out to the bottom hole 6622 described later, and the other part flows into the second passage P2.

The guide ring member 6800 may guide the gas flow of the plasma flowing through the first passage P1 and the second passage P2 to the processing space 5200 . The guide ring member 6800 may guide the gas flow containing particles flowing through the first passage P1 and the second passage P2 to an edge region of the processing space 5200 . The guide ring member 6800 may be provided substantially in a ring shape. As an example, the guide ring member 6800 may be provided in a ring shape with upper and lower plugged. For example, the guide ring member 6800 may be provided in a ring shape having a space inside.

Guide ring member 6800 may be located inside diffusion chamber 5620 . The guide ring member 6800 may be located under the upper guide body 6400 . Guide ring member 6800 may interface with outer bottom surface 6460 . As an example, the upper end of the guide ring member 6800 may be in line and/or surface contact with the lower end of the outer bottom surface 6460 . The guide ring member 6800 may be in contact with the lower guide body 6600 . For example, a side surface of the guide ring member 6800 may make surface contact with an inner side surface of the lower guide body 6600 . The lower end of the guide ring member 6800 may be arranged adjacent to the lower end of the lower guide body 6600 . As one example, the lower end of the guide ring member 6800 may be located at the same height from the ground as the lower end of the lower guide body 6600 . An upper end of the guide ring member 6800 may be located higher than an upper end of the lower guide body 6600 .

An inflow hole 6820 may be formed at a side of the guide ring member 6800 . The inflow hole 6820 may be formed on the second passage P2 formed by combining the upper guide body 6400 and the lower guide body 6600 with each other. As an example, the inflow hole 6820 may be provided on the side of the guide ring member 6800 between the lower end of the outer bottom surface 6460 and the upper end of the lower guide body 6600 . A plurality of inflow holes 6820 may be provided. The inflow holes 6820 may be provided circumferentially spaced apart from each other along the side surface of the guide ring member 6800 . Through the second passage P2, the gas flow containing plasma and/or particles formed during plasma generation flows into the inflow hole 6820 .

An outflow hole 6840 may be formed under the guide ring member 6800 . The outflow hole 6840 may be provided in plural. The outflow holes 6840 may be provided on the lower surface of the guide ring member 6800 at predetermined intervals from each other. The plasma gas flow flowing into the inner space of the guide ring member 6800 through the inflow hole 6820 can flow into the processing space 5200 through the outflow hole 6840 . The diameter of the outflow hole 6840 may be smaller than the diameter of the baffle hole 5282 .

The above-mentioned guide ring member 6800 according to an embodiment of the present invention has been described by taking the case where the outflow hole 6840 is formed on the lower surface as an example, but it is not limited thereto. In addition, in the above-mentioned embodiments of the present invention, the case where the guide ring member 6800 is in the shape of a ring with its upper and lower sides blocked is taken as an example for description. But not limited thereto, the guide ring member 6800 may be configured in a ring shape with a closed top and an open bottom. Therefore, the plasma flow flowing into the inner space of the guide ring member 6800 through the inflow hole 6820 can flow into the processing space 5200 through the open bottom of the guide ring member 6800 .

FIG. 8 is a diagram schematically illustrating gas flow in the process chamber of FIG. 6 performing a plasma treatment process. Referring to FIG. 8 , the gas flow and/or plasma containing impurities or particles formed during plasma generation flows to the first passage P1 formed by the combination of the diffusion chamber 5620 and the upper guide 6400 . For example, the airflow flows downward along the inclined surface formed in the first inclined portion 6440 . A portion of the airflow passing through the first passage P1 passes through the hole 6660 . The air flow passing through the hole 6660 flows along the inclined surface of the first passage P1, so as to flow to the edge area of the processing space 5200.

Another part of the airflow passing through the first passage P1 flows to the second passage P2 formed by combining the upper guide body 6400 and the lower guide body 6600 with each other. The airflow passing through the second passage P2 flows to the inflow hole 6820 formed on the guide ring member 6800 . The airflow passing through the inflow hole 6820 passes through the outflow hole 6840 via the inner space formed in the guide ring member 6800 . The flow direction of the airflow flowing in the second passage P2 changes while passing through the outflow hole 6840, and the airflow flows to the edge region of the processing space 5200 due to centrifugal force.

According to the above-mentioned embodiment of the present invention, the plasma generated by the plasma generation chamber 540 flows to the first passage P1 formed by combining the diffusion chamber 5620 and the upper guide body 6400 . Part of the plasma passing through the first passage P1 flows to the edge region of the processing space 5200 through the hole 6660 . In addition, another part of the plasma passing through the first passage P1 flows to the second passage P2 formed by combining the upper guide body 6400 and the lower guide body 6600 with each other. The plasma flowing in through the second passage P2 flows to the edge region of the processing space 5200 through the inflow hole 6820 and the outflow hole 6840 in sequence.

Therefore, concentration of plasma generated in the plasma generation chamber 540 to an area including the central area of the baffle plate 5280 can be minimized. Concentration of plasma in the baffle 5280 located in an area overlapping with the plasma generation chamber 540 when viewed from above can be minimized. Thus, the thermal deformation of the baffle 5280 that may occur due to plasma concentration in the baffle 5280 can be minimized. By minimizing the thermal deformation of the baffle, the replacement cycle of the baffle is relatively extended, thereby saving maintenance costs. Additionally, by minimizing thermal deformation of the baffle, particles that occur during baffle deformation are reduced.

In addition, the concentration of plasma in the central region including the center of the substrate W can be minimized, and the plasma can be uniformly dispersed on the substrate W. Therefore, when the substrate W is treated with plasma, the uniformity of the plasma treatment applied to the substrate can be ensured.

In addition, according to an embodiment of the present invention described above, the gas flow containing impurities or particles formed during the plasma generation flows to the first passage P1. A part of the air flow passing through the first passage P1 flows to the edge area of the processing space 5200 through the hole 6660 . In addition, another part of the airflow passing through the first passage P1 flows to the second passage P2 formed by combining the upper guide body 6400 and the lower guide body 6600 with each other. The gas flow flowing in through the second passage P2 flows through the inflow hole 6820 and the outflow hole 6840 to the edge area of the processing space 5200 in sequence.

A gas flow containing particles and the like formed during plasma generation may be directed to an edge region of the processing space 5200 . Therefore, flow to the substrate W supported by the support unit 5240 located in the processing space 5200 can be minimized. Deposition of impurities or particles on the upper portion of the substrate W can be minimized. Therefore, the process defect rate that occurs during the plasma treatment process due to the deposition of particles onto the upper portion of the substrate W can be minimized.

The above detailed description is illustrative of the present invention. In addition, the foregoing content shows and describes preferred embodiments of the present invention, and the present invention can be used in various other combinations, changes and environments. That is, changes or revisions can be made within the scope of the concept of the invention disclosed in this specification, the scope equivalent to the foregoing disclosure, and/or the skill or knowledge of the industry. The foregoing embodiments describe the best state required for embodying the technical idea of the present invention, and various changes required by the specific application fields and uses of the present invention can also be made. Accordingly, the above summary of the invention is not intended to limit the invention to the disclosed embodiments. In addition, it should be construed that the attached claims also include other embodiments.

1: Substrate processing equipment 2: First direction 4: Second direction 20:Equipment front-end module 30: Processing modules 200: load port 202: support part 220: transfer frame 222: The first transfer robot 224: transfer track 300: Loading lock chamber 400: transfer chamber 420: The second transfer robot 500: process chamber 520: processing room 540: Plasma generation chamber 560: Diffusion chamber 580: exhaust chamber 5200: processing space 5220: shell 5222: exhaust hole 5240: support unit 5242: support plate 5244: support shaft 5260: exhaust baffle 5262: exhaust hole 5280: baffle 5282: Baffle hole 5420: Plasma chamber 5422: Plasma Generation Space 5424: gas supply port 5440: gas supply unit 5460: Power application unit 5462: Antenna 5464: power supply 5620: Diffusion chamber 5626: connection part 5820: exhaust line 5840: pressure relief member 6000: Airflow guide member 6200: guide body 6400: Upper guide body 6420: top 6440: the first slope 6460: outsole face 6600: Lower guide body 6620: bottom 6622: bottom hole 6640: the second inclined part 6660: hole 6800: guide ring member 6820: Inflow hole 6840: outflow hole C: Carrier P1: the first path P2: the second path W: Substrate

FIG. 1 is a diagram schematically showing a substrate processing apparatus of the present invention. FIG. 2 is a diagram schematically illustrating an embodiment of a processing chamber for performing a plasma processing process in the processing chamber of the substrate processing equipment of FIG. 1 . FIG. 3 is a perspective view schematically showing the airflow guiding member of FIG. 2 . FIG. 4 is a diagram schematically showing a state in which the guide ring member of FIG. 2 is viewed from below. FIG. 5 is a diagram schematically illustrating gas flow in the process chamber of FIG. 2 performing a plasma treatment process. FIG. 6 is a diagram schematically illustrating another embodiment of the processing chamber of FIG. 2 for performing a plasma treatment process. FIG. 7 is a perspective view schematically showing the airflow guiding member of FIG. 6 . FIG. 8 is a diagram schematically illustrating gas flow in the process chamber of FIG. 6 performing a plasma treatment process.

500: process chamber

520: processing room

540: Plasma generation chamber

560: Diffusion chamber

580: exhaust chamber

5200: processing space

5220: shell

5222: exhaust hole

5240: support unit

5242: support plate

5244: support shaft

5260: exhaust baffle

5262: exhaust hole

5280: baffle

5282: Baffle hole

5420: Plasma chamber

5422: Plasma Generation Space

5424: gas supply port

5440: gas supply unit

5460: Power application unit

5462: Antenna

5464: power supply

5620: Diffusion chamber

5626: connection part

5820: exhaust line

5840: pressure relief member

6200: guide body

6400: Upper guide body

6420: top

6440: the first slope

6600: Lower guide body

6620: bottom

6622: bottom hole

6640: the second inclined part

6800: guide ring member

6820: Inflow hole

W: Substrate

Claims (20)

A substrate processing device, the substrate processing device is used to process a substrate, the substrate processing device includes: A processing chamber, the aforementioned processing chamber provides a processing space for processing the substrate; a plasma generation chamber, wherein the plasma generation chamber generates plasma supplied from process gas to the aforementioned processing space; a diffusion chamber, the diffusion chamber diffuses the plasma generated in the plasma generation chamber into the processing space; a baffle plate, the aforementioned baffle plate is installed on the upper end of the aforementioned processing chamber, and is formed with a plurality of baffle plate holes; and an airflow guiding member, the aforementioned airflow guiding member is equipped inside the aforementioned diffusion chamber to guide the flow direction of the aforementioned plasma, The aforementioned airflow guiding member includes a guiding body that partially changes the flow direction of the aforementioned plasma; The aforementioned guides include: an upper guide body, the aforementioned upper guide body is combined with the side wall of the aforementioned diffusion chamber to form a first passage; and The lower guide body, the lower guide body located at the lower part of the upper guide body, is combined with the upper guide body to form the second passage. The substrate processing equipment according to claim 1, wherein the lower guide includes: a bottom, the bottom extending horizontally from the lower end of the side wall of the diffusion chamber toward the center of the diffusion chamber; and The inclined portion is provided to be inclined more and more upwardly from the aforementioned bottom toward the aforementioned center of the aforementioned diffusion chamber. The substrate processing equipment according to claim 2, wherein a bottom hole penetrating the bottom in an up-down direction is formed in the bottom. The substrate processing apparatus according to claim 1, wherein the upper guide body is provided parallel to the side wall of the diffusion chamber. The substrate processing apparatus according to claim 2, wherein the inclined portion is provided parallel to the side wall of the diffusion chamber. The substrate processing apparatus according to claim 3, wherein the gas flow guide member further includes a guide ring member, and the guide ring member is provided in a ring shape to guide the plasma gas flow flowing through the first passage and the second passage. lead to the aforementioned processing space, and An upper end portion of the guide ring member is in line contact with an inner surface of the upper guide body, and a lower end portion of the guide ring member is in line contact with an upper end of the inclined portion. The substrate processing apparatus according to claim 6, wherein an inflow hole is formed on a side surface of the guide ring member along a circumferential direction, and the inflow hole is for the plasma flow flowing in through the second passage to flow in. The substrate processing apparatus according to claim 7, wherein the lower surface of the guide ring member is open. The substrate processing apparatus according to claim 7, wherein at least one outflow hole through which the plasma gas flow flowing in from the inflow hole flows out is formed on the lower surface of the guide ring member. The substrate processing apparatus according to claim 9, wherein the diameters of the bottom hole and the outflow hole are smaller than the baffle hole. A substrate processing device, the substrate processing device is used to process a substrate, the substrate processing device includes: A processing chamber, the aforementioned processing chamber provides a processing space for processing the substrate; a plasma generation chamber, wherein the plasma generation chamber generates plasma supplied from process gas to the aforementioned processing space; a diffusion chamber, the diffusion chamber diffuses the plasma generated in the plasma generation chamber into the processing space; a baffle plate, the aforementioned baffle plate is installed on the upper end of the aforementioned processing chamber, and a plurality of baffle plate holes are formed; and an airflow guiding member, the aforementioned airflow guiding member is equipped inside the aforementioned diffusion chamber to guide the flow direction of the aforementioned plasma, The air flow guide member includes a guide ring member configured in a ring shape and installed inside the diffusion chamber. The substrate processing apparatus according to claim 11, wherein an inflow hole for the flow of the plasma flow is formed on a side surface of the guide ring member along the circumferential direction of the side surface. The substrate processing apparatus according to claim 12, wherein the lower surface of the guide ring member is open. The substrate processing apparatus according to claim 12, wherein at least one outflow hole is formed on the lower surface of the guide ring member, and the outflow hole allows the plasma gas flow flowing in from the inflow hole to flow out. The substrate processing equipment according to claim 14, wherein the airflow guiding member further includes a guiding body, The aforementioned guides include: an upper guide body, the aforementioned upper guide body is combined with the side wall of the aforementioned diffusion chamber to form a first passage, and guides a part of the aforementioned plasma flowing in the aforementioned diffusion chamber; and The lower guide body, the lower guide body being located under the upper guide body, is combined with the upper guide body to form a second passage, and guides the plasma guided from the first passage to the inflow hole through the second passage. The substrate processing equipment according to claim 15, wherein the lower guide includes: a bottom, the bottom extending horizontally from the lower end of the side wall of the diffusion chamber toward the center of the diffusion chamber; and The inclined portion is provided to be inclined more and more upwardly from the aforementioned bottom toward the aforementioned center of the aforementioned diffusion chamber. The substrate processing equipment according to claim 16, wherein a bottom hole penetrating through the bottom in an up-down direction is formed in the bottom. The substrate processing apparatus according to claim 17, wherein an upper end portion of the guide ring member is in line contact with an inner surface of the upper guide body, The lower end portion of the guide ring member is in line contact with the upper end of the inclined portion. The substrate processing apparatus according to claim 16, wherein the upper guide body and the inclined portion are arranged parallel to the side wall of the diffusion chamber. The substrate processing equipment according to any one of claims 11 to 19, wherein the diffusion chamber is configured in an inverted funnel shape.

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