TW202239897A - Sheet for workpiece processing including a base material and an adhesive layer - Google Patents
Sheet for workpiece processing including a base material and an adhesive layer Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/29—Laminated material
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/08—Macromolecular additives
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
- C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
- C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
- C09J2301/122—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present only on one side of the carrier, e.g. single-sided adhesive tape
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
- C09J2301/416—Additional features of adhesives in the form of films or foils characterized by the presence of essential components use of irradiation
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2423/00—Presence of polyolefin
- C09J2423/006—Presence of polyolefin in the substrate
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2423/00—Presence of polyolefin
- C09J2423/10—Presence of homo or copolymers of propene
- C09J2423/106—Presence of homo or copolymers of propene in the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- Chemical & Material Sciences (AREA)
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
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- Adhesive Tapes (AREA)
- Dicing (AREA)
Abstract
Description
本發明是關於一種使用在半導體晶圓等的工件的加工的工件加工用片。The present invention relates to a workpiece processing sheet used for processing workpieces such as semiconductor wafers.
矽、砷化鎵等的半導體晶圓、各種封裝類,以大直徑的狀態製造,將晶片經切斷(切割,dicing)、經剝離(撿晶,pick up)後,移往作為接續步驟的安裝步驟。此時,半導體晶圓等的工件,以積層在具備基材以及黏著劑層的黏著片(以下,有時為「工件加工用片」)上的狀態,進行背面研磨(back grinding)、切割、洗淨、乾燥、延展(expanding)、撿晶、安裝(mounting)等的加工。Semiconductor wafers such as silicon and gallium arsenide, and various packages are manufactured in a large-diameter state. After the wafer is cut (dicing, dicing) and peeled (picking up), it is moved to the next step. installation steps. At this time, a workpiece such as a semiconductor wafer is laminated on an adhesive sheet (hereinafter, sometimes referred to as a "workpiece processing sheet") provided with a base material and an adhesive layer, and undergoes back grinding, dicing, Processing such as washing, drying, expanding, picking up crystals, and mounting.
作為上述切割的具體手法,以一般的全切斷(full cut dicing)而言,為藉由旋轉的圓刀(切割刃)進行工件的切斷。此時,為了確實將積層於工件加工用片的工件切斷,通常,不僅工件,連黏著劑層亦被切斷,進一步連基材的一部分也被切斷。此時,從構成黏著劑層以及基材的材料而來的切削片,從工件加工用片產生,藉由工件的切斷所獲得的晶片會有受到切削片汙染的情況。作為該切削片的典型的形態之一,在切割線上,或是附著在藉由切割而被分離的晶片的剖面附近會有細絲狀的切削片。As a specific method of the above-mentioned dicing, in terms of general full cut dicing, a workpiece is cut by a rotating circular knife (cutting edge). At this time, in order to reliably cut the workpiece laminated on the workpiece processing sheet, not only the workpiece but also the adhesive layer are usually cut, and a part of the base material is also cut. At this time, chips from the materials constituting the adhesive layer and the base material are generated from chips for workpiece processing, and wafers obtained by cutting the workpiece may be contaminated by the chip chips. As one of the typical forms of the chip, there is a filament-shaped chip on the dicing line or near the cross section of the wafer separated by dicing.
一旦上述細絲狀的切削片晶片大量附著時,打線(wire bonding)受到阻礙,再者,若就這樣進行晶片的封裝,附著在晶片上的細絲狀的切削片因封裝的熱而分解,此熱分解物將破壞封裝,在所得的裝置中成為故障的原因。由於此細絲狀的切削片難以藉由洗淨而去除,因細絲狀的切削片的發生導致切割步驟的產率顯著降低。因此,在使用工件加工用片進行切割時,要求防止細絲狀的切削片的發生。Once the above-mentioned filament-shaped chip chips are attached in a large amount, wire bonding is hindered. Furthermore, if the chip is packaged in this way, the filament-shaped chip chips attached to the chip are decomposed by the heat of the package. This thermally decomposed product destroys the package and becomes a cause of failure in the obtained device. Since the filamentous cutting pieces are difficult to remove by washing, the yield of the cutting step is significantly reduced due to the occurrence of the filamentous cutting pieces. Therefore, when dicing is performed using a workpiece processing sheet, it is required to prevent the occurrence of filamentous cutting chips.
此外,工件加工用片在特定的處理步驟完成時,從被附著物進行剝離,此時,在工件加工用片與被附著物之間,會產生被稱為剝離靜電的靜電力。此類靜電力成為在工件、裝置附著塵埃等的原因,同時成為工件等的破壞原因。因此,以工件加工用片而言,亦要求抗靜電性。In addition, the sheet for workpiece processing is peeled from the adherend when a specific processing step is completed. At this time, an electrostatic force called peeling static electricity is generated between the sheet for workpiece processing and the adherend. Such electrostatic force causes dust and the like to adhere to workpieces and devices, and at the same time causes damage to workpieces and the like. Therefore, antistatic properties are also required for workpiece processing sheets.
於專利文獻1中,以提供優良的切削片抑制效果以及具有抗靜電性的工件加工用片為目的,揭示一種將特定的抗靜電劑,特定的聚烯烴系樹脂以及特定的橡膠彈性體(elastomer),以特定的調配比例調配而成的基材。 [先前技術文獻] [專利文獻] In Patent Document 1, a specific antistatic agent, a specific polyolefin-based resin, and a specific rubber elastomer (elastomer) are disclosed for the purpose of providing a workpiece processing sheet with an excellent cutting chip suppression effect and antistatic properties. ), a base material prepared in a specific blending ratio. [Prior Art Literature] [Patent Document]
專利文獻1:日本特許5056112號公報Patent Document 1: Japanese Patent No. 5056112
[發明所欲解決的問題][Problem to be solved by the invention]
順帶一提,在半導體晶圓的切割步驟後,一般而言,會進行所得的晶片的洗淨。具體而言,將載置有複數個晶片的工件加工用片,吸附在清洗盤(spinner table)上進行固定,於工件加工用片上,以超純水進行晶片的洗淨,以及之後的乾燥(風乾)。在此等處理結束後,將載置有複數個晶片的工件加工用片從清洗盤拉離,發明者等確認在此拉離的時刻,也會有剝離靜電產生。Incidentally, after the dicing step of the semiconductor wafer, cleaning of the resulting wafer is generally performed. Specifically, a workpiece processing sheet on which a plurality of wafers are placed is adsorbed and fixed on a spinner table, and the wafer is cleaned with ultrapure water on the workpiece processing sheet, and then dried ( air dry). The inventors have confirmed that peeling static electricity is also generated when the workpiece processing sheet on which a plurality of wafers are placed is pulled off the cleaning tray after such processing is completed.
若亦考慮到上述剝離靜電時,如專利文獻1之類的以往的工件加工用片,並沒有以高水準實現切削片抑制效果及抗靜電性。In consideration of the above-mentioned stripping of static electricity, conventional workpiece processing sheets such as Patent Document 1 do not achieve a cutting chip suppression effect and antistatic properties at a high level.
本發明為鑑於此等情況而完成者,其目的為提供一種發揮優良的抗靜電性,同時可良好地抑制切削片的發生的工件加工用片。 [用以解決問題的手段] The present invention has been made in view of these circumstances, and an object of the present invention is to provide a sheet for workpiece processing that can suppress the generation of chips well while exhibiting excellent antistatic properties. [means used to solve a problem]
為了達成上述目的,首先,本發明提供一種工件加工用片,具備:基材,以及積層在上述基材中的單面側的黏著劑層,其特徵在於上述基材具備:位在相對靠近於上述黏著劑層的表面層,位在相對遠離於上述黏著劑層的背面層,以及位在上述表面層與上述背面層之間的中間層,上述表面層以及上述背面層各別含有抗靜電劑,上述表面層的厚度為10μm以下(發明1)。In order to achieve the above object, firstly, the present invention provides a sheet for workpiece processing, comprising: a base material, and an adhesive layer laminated on one side of the base material, wherein the base material is characterized in that the base material has: The surface layer of the above-mentioned adhesive layer is located on the back layer relatively far away from the above-mentioned adhesive layer, and the intermediate layer is located between the above-mentioned surface layer and the above-mentioned back layer, and the above-mentioned surface layer and the above-mentioned back layer respectively contain antistatic agents , the thickness of the surface layer is 10 μm or less (Invention 1).
上述發明(發明1)相關的工件加工用片,藉由基材為具備上述3層者,同時當中的表面層以及背面層各別含有抗靜電劑,再者,表面層的厚度於上述範圍,發揮優良的抗靜電性,同時可良好地抑制切削片的發生。In the workpiece processing sheet related to the above-mentioned invention (Invention 1), the substrate is provided with the above-mentioned three layers, and the surface layer and the back layer contain antistatic agents respectively, and the thickness of the surface layer is within the above-mentioned range. Exhibits excellent antistatic properties and suppresses chips well.
在上述發明(發明1)中,以黏著劑層中與基材相反側的面的表面電阻率,為1.0×10 13Ω/□以下為佳(發明2)。 In the above invention (Invention 1), the surface resistivity of the surface of the adhesive layer opposite to the substrate is preferably 1.0×10 13 Ω/□ or less (Invention 2).
在上述發明(發明1、2)中,以上述中間層不含有上述抗靜電劑,或是,上述中間層以相較於上述表面層以及上述背面層各別更少的含量(單位:質量%),含有上述抗靜電劑為佳(發明3)。In the above-mentioned inventions (Inventions 1 and 2), the above-mentioned intermediate layer does not contain the above-mentioned antistatic agent, or the above-mentioned intermediate layer has a lower content (unit: mass %) than that of the above-mentioned surface layer and the above-mentioned back layer. ), it is better to contain the above-mentioned antistatic agent (invention 3).
在上述發明(發明1~3)中,上述抗靜電劑以高分子型抗靜電劑為佳(發明4)。In the above inventions (Inventions 1 to 3), the antistatic agent is preferably a polymer antistatic agent (Invention 4).
在上述發明(發明1~4)中,上述中間層的厚度以40μm以上,75μm以下為佳(發明5)。In the above inventions (Inventions 1 to 4), the thickness of the intermediate layer is preferably not less than 40 μm and not more than 75 μm (Invention 5).
在上述發明(發明1)中,上述背面層的厚度以2μm以上,40μm以下為佳(發明6)。In the above invention (Invention 1), the thickness of the back layer is preferably not less than 2 μm and not more than 40 μm (Invention 6).
在上述發明(發明1~6)中,以切割片為佳(發明7)。 [發明功效] Among the above inventions (Inventions 1 to 6), a cut sheet is preferable (Invention 7). [Efficacy of the invention]
本發明相關的工件加工用片,發揮優良的抗靜電性,同時可良好地抑制切削片的發生。The workpiece processing sheet according to the present invention exhibits excellent antistatic properties and can suppress the occurrence of chipping well.
[用以實施發明的形態][Mode for Carrying Out the Invention]
以下,針對本發明的實施形態加以說明。
圖1中,表示一實施形態相關的工件加工用片的剖面圖。圖1中所示的工件加工用片1,具備:基材11,以及積層於基材11中單面側的黏著劑層12。
Embodiments of the present invention will be described below.
FIG. 1 shows a cross-sectional view of a workpiece processing sheet according to an embodiment. The workpiece processing sheet 1 shown in FIG. 1 includes a
如圖1所示,上述基材11具備:位在相對靠近於黏著劑層12的表面層111,位在相對遠離於黏著劑層12的背面層113,以及位在表面層111與背面層113之間的中間層112。As shown in Figure 1, the above-mentioned
然後,表面層111以及背面層113各別含有抗靜電劑。如此一來,本實施形態相關的工件加工用片1為具有優良的抗靜電性者。因此,可良好地抑制從工件加工用片1將剝離片、工件進行分離時的剝離靜電。進一步,進行工件加工用片1上的工件的洗淨以及乾燥後,也良好地防止從清洗盤將工件加工用片1拉離時的剝離靜電。Then, the
再者,本實施形態中的表面層111的厚度為10μm以下。如此一來,藉由位在相對靠近於黏著劑層12的表面層111的厚度為10μm以下,當使用本實施形態相關的工件加工用片進行切割時,可良好地抑制切削片的發生。發明者等發現含有抗靜電劑的層,相較於不含有抗靜電劑的層,更容易有切削片產生。本實施形態相關的工件加工用片1,藉由含有抗靜電劑的表面層111成為10μm以下的薄度,即便發揮期望的抗靜電性,仍同時可良好地抑制切削片的發生。In addition, the thickness of the
從易於更有效地抑制切削片的發生的觀點而言,表面層111的厚度以8μm以下為佳,特別是以4μm以下為佳。此外,從易於具有更良好的抗靜電性的觀點而言,表面層111的厚度以1μm以上為佳,特別是以2μm以上為佳。The thickness of the
1.工件加工用片的構成
(1)基材
本實施形態中的基材11,如上述,具備:表面層111、中間層112以及背面層113。關於此等層的組成,只要滿足表面層111以及背面層113分別含有抗靜電劑,則無特別限定。
1. Composition of sheet for workpiece processing
(1) Substrate
The
在此,雖然中間層112也可以含有抗靜電劑,但從易於抑制切削片的發生的觀點而言,以中間層112不含有抗靜電劑,或是,中間層112以相較於表面層111以及背面層113各別更少的含量(單位:質量%)含有抗靜電劑為佳。如此一來,藉由不含有抗靜電劑,或是其含量較少的中間層112存在於表面層111與背面層113之間,在切割的時刻,切割刃到達中間層112時,可良好地抑制來自中間層112的切削片的發生。Here, although the
作為構成基材11的各層中的抗靜電劑以外的材料,只要是能夠形成此等層者,則無特別限定,例如,可使用樹脂。從易於抑制切削片的發生的觀點而言,以使用聚烯烴系樹脂以及熱可塑性彈性體的至少一種為佳。Materials other than the antistatic agent in each layer constituting the
且,表面層與背面層可以為相異的組成,也可以是全部相同的組成。In addition, the composition of the surface layer and the back layer may be different, or all may be the same composition.
(1-1)抗靜電劑
本實施形態中的抗靜電劑並無特別限定,可使用習知者。作為抗靜電劑的例子,雖然可列舉,低分子型抗靜電劑、高分子型抗靜電劑等,從易於抑制切削片的發生,或是,從來自表面層111、背面層113的滲出(bleed out)難以發生的觀點而言,以高分子型抗靜電劑為佳。
(1-1) Antistatic agent
The antistatic agent in this embodiment is not particularly limited, and known ones can be used. As examples of antistatic agents, although low molecular type antistatic agents, high molecular type antistatic agents, etc. can be cited, it is easy to suppress the generation of chipping, or from the bleed (bleed) from the
作為高分子型抗靜電劑,可列舉,聚醚酯醯胺、聚醚聚烯烴嵌段共聚物等、具有聚醚單元的共聚物,於此等共聚物中亦可含有鹼金屬鹽、鹼土類金屬鹽等的金屬鹽、離子液體。Examples of high-molecular antistatic agents include polyether ester amide, polyether polyolefin block copolymers, and copolymers having polyether units. Alkali metal salts and alkaline earth compounds may also be contained in these copolymers. Metal salts such as metal salts, and ionic liquids.
表面層111中的抗靜電劑的含量,以3質量%以上為佳,特別是以5質量%以上為佳,進一步以10質量%以上為佳。藉由抗靜電劑的含量為3質量%以上,變得易於發揮良好的抗靜電性。此外,表面層111中的抗靜電劑的含量,以40質量%以下為佳,特別是以35質量%以下為佳,進一步以30質量%以下為佳。藉由抗靜電劑的含量為40質量%以下,變得易於抑制切削片的發生。The content of the antistatic agent in the
背面層113中的抗靜電劑的含量,以10質量%以上為佳,特別是以20質量%以上為佳,進一步以30質量%以上為佳。藉由抗靜電劑的含量為10質量%以上,變得易於發揮良好的抗靜電性。此外,背面層113中的抗靜電劑的含量,以50質量%以下為佳,特別是以45質量%以下為佳,進一步以40質量%以下為佳。藉由抗靜電劑的含量為50質量%以下,變得易於控制切削片的發生。The content of the antistatic agent in the
且,如上述,以中間層112不含有抗靜電劑,或是,中間層112以相較於表面層111以及背面層113各別更少的含量(單位:質量%)含有抗靜電劑為佳。中間層112含有抗靜電劑時,中間層112中的其含量,以10質量%以下為佳,特別是以5質量%以下為佳,進一步以3質量%以下為佳。藉由中間層112中的抗靜電劑的含量為5質量%以下,變得易於抑制切削片的發生。且,作為上述含量的下限值,例如,可以是0.01質量%以上。And, as mentioned above, it is better that the
(1-2)聚烯烴系樹脂 上述聚烯烴系樹脂的具體例,並無特別限定。且,在本說明書中,所謂聚烯烴系樹脂,是指以烯烴當作單體的聚合物或是共聚物,或是烯烴與烯烴以外的分子當作單體的共聚物,聚合後的樹脂中以烯烴單元為基礎的部分的質量比率為1.0質量%以上的樹脂。 (1-2) Polyolefin resin Specific examples of the polyolefin-based resin are not particularly limited. In addition, in this specification, the so-called polyolefin-based resin refers to a polymer or copolymer using olefin as a monomer, or a copolymer of olefin and a molecule other than olefin as a monomer. A resin having a mass ratio of 1.0% by mass or more based on olefin units.
構成上述聚烯烴系樹脂的高分子可以是直鏈狀,也可以具有側鏈。此外,該高分子也可具有芳香環、脂肪族環。The polymer constituting the polyolefin-based resin may be linear or may have a side chain. In addition, the polymer may have an aromatic ring or an aliphatic ring.
作為構成聚烯烴系樹脂的烯烴單體,可列舉,碳數2~8的烯烴單體、碳數3~18的α-烯烴單體、具有環狀構造的烯烴單體等。作為碳數2~8的烯烴單體,可列舉,乙烯、丙烯、2-丁烯、辛烯等。作為碳數3~18的α-烯烴單體,可列舉,丙烯、1-丁烯、4-甲基-1-戊烯、1-己烯、1-辛烯、1-癸烯、1-十二烯、1-十四烯、1-十八烯等。作為具有環狀構造的烯烴單體,可列舉,降莰烯、環戊二烯、環己二烯、二環戊二烯以及四環十二烯還有該等的衍生物等。Examples of the olefin monomer constituting the polyolefin resin include olefin monomers having 2 to 8 carbon atoms, α-olefin monomers having 3 to 18 carbon atoms, and olefin monomers having a cyclic structure. Examples of the olefin monomer having 2 to 8 carbon atoms include ethylene, propylene, 2-butene, octene and the like. Examples of α-olefin monomers having 3 to 18 carbon atoms include propylene, 1-butene, 4-methyl-1-pentene, 1-hexene, 1-octene, 1-decene, 1- Dodecene, 1-tetradecene, 1-octadecene, etc. Examples of the olefin monomer having a cyclic structure include norcamphene, cyclopentadiene, cyclohexadiene, dicyclopentadiene, tetracyclododecene, and derivatives thereof.
聚烯烴系樹脂可單獨1種或混合2種以上使用。The polyolefin-based resins may be used alone or in combination of two or more.
上述聚烯烴系樹脂的具體例當中,以使用含有乙烯作為主要聚合單元的聚乙烯以及以含有丙烯作為主要聚合單元的聚丙烯的至少一者為佳。Among the specific examples of the above-mentioned polyolefin-based resin, it is preferable to use at least one of polyethylene containing ethylene as a main polymerized unit and polypropylene containing propylene as a main polymerized unit.
作為上述聚丙烯,例如,以使用均聚聚丙烯(homo polypropylene)、隨機聚丙烯(random polypropylene)以及嵌段聚丙烯(block polypropylene)為佳。此等可單獨1種或混合2種以上使用。特別是,以使用混合均聚聚丙烯與隨機聚丙烯為佳。As the aforementioned polypropylene, for example, homo polypropylene, random polypropylene, and block polypropylene are preferably used. These can be used individually by 1 type or in mixture of 2 or more types. In particular, it is preferable to use mixed homopolypropylene and random polypropylene.
作為上述均聚聚丙烯、隨機聚丙烯以及嵌段聚丙烯,分別可以使用有在販售的市售品。作為均聚聚丙烯的市售品的例子,可列舉,皆為Prime Polymer Co., Ltd.製的商品名「Prime Polypro E111G」、商品名「Prime Polypro E-100GV」、商品名「Prime Polypro E-100GPL」、商品名「Prime Polypro E-200GP」等。作為隨機聚丙烯的市售品的例子,可列舉,皆為Prime Polymer Co., Ltd.製的商品名「Prime Polypro B221WA」、商品名「Prime Polypro B241」、商品名「Prime Polypro E222」、商品名「Prime Polypro E-333GV」等。作為嵌段聚丙烯的市售品的例子,可列舉,皆為Prime Polymer Co., Ltd.製的商品名「Prime Polypro E701G」、商品名「Prime Polypro E702G」、商品名「Prime Polypro E702MG」等。As the above-mentioned homopolypropylene, random polypropylene, and block polypropylene, commercially available items can be used, respectively. As examples of commercially available products of homopolymer polypropylene, all of them are manufactured by Prime Polymer Co., Ltd. under the trade name "Prime Polypro E111G", the trade name "Prime Polypro E-100GV", the trade name "Prime Polypro E-100GV", the trade name "Prime Polypro E- -100GPL", trade name "Prime Polypro E-200GP", etc. Examples of commercially available products of random polypropylene include trade names "Prime Polypro B221WA", trade names "Prime Polypro B241", trade names "Prime Polypro E222", trade names "Prime Polypro E222" and Name "Prime Polypro E-333GV" and so on. Examples of commercially available block polypropylene products include "Prime Polypro E701G", "Prime Polypro E702G", and "Prime Polypro E702MG", all manufactured by Prime Polymer Co., Ltd. .
作為上述聚乙烯,可以是高密度聚乙烯、中密度聚乙烯、低密度聚乙烯、超低密度聚乙烯以及直鏈狀低密度聚乙烯的任一者,也可以是此等2種以上的混合物。The above-mentioned polyethylene may be any one of high-density polyethylene, medium-density polyethylene, low-density polyethylene, ultra-low-density polyethylene, and linear low-density polyethylene, or a mixture of two or more thereof. .
特別是,作為上述聚乙烯,以使用低密度聚乙烯為佳,作為其市售品的例子,可列舉,Mitsubishi Chemical Corporation製的商品名「Novatec LL」、Prime Polymer Co., Ltd.製的NEO-ZEX系列、ULTZEX系列等。In particular, it is preferable to use low-density polyethylene as the above-mentioned polyethylene, and examples of commercially available products include "Novatec LL" manufactured by Mitsubishi Chemical Corporation, and NEO manufactured by Prime Polymer Co., Ltd. -ZEX series, ULTZEX series, etc.
構成基材11的層的任一者含有聚烯烴系樹脂時,該層中的聚烯烴系樹脂的含量,以10質量%以上為佳,特別是以15質量%以上為佳,進一步以20質量%以上為佳。此外,上述含量以100質量%以下為佳,特別是以95質量%以下為佳,進一步以90質量%以下為佳。藉由聚烯烴系樹脂的含量於上述範圍,本實施形態相關的工件加工用片1變得易於獲得更良好的切削片抑制效果。When any one of the layers constituting the
(1-3)熱可塑性彈性體
作為上述熱可塑性彈性體,可以是上述聚烯烴系樹脂以外者,只要可形成基材11者,則無特別限定。作為熱可塑性彈性體的例子,可列舉,例如,烯烴系彈性體、橡膠彈性體、氨酯系彈性體、苯乙烯系彈性體、丙烯酸系彈性體、氯乙烯系彈性體等。此等可單獨使用,亦可組合2種以上使用。
(1-3) Thermoplastic elastomer
The above-mentioned thermoplastic elastomer may be any other than the above-mentioned polyolefin-based resin, and it is not particularly limited as long as it can form the
上述彈性體當中,從易於獲得良好的切削片抑制效果的觀點而言,以烯烴系彈性體為佳。且,在本說明書中,所謂「烯烴系彈性體」,是指含有來自烯烴或其衍生物(烯烴系化合物)的構造單元的共聚物,在包含常溫在內的溫度區域具有橡膠狀的彈性,同時具有熱可塑性的材料。Among the above-mentioned elastomers, olefin-based elastomers are preferable from the viewpoint of being easy to obtain a good chipping suppressing effect. In addition, in this specification, the term "olefin-based elastomer" refers to a copolymer containing structural units derived from olefins or derivatives thereof (olefin-based compounds), and has rubber-like elasticity in a temperature range including normal temperature, Also thermoplastic material.
作為烯烴系彈性體的例子,可列舉,包含至少1種選自由乙烯.丙烯共聚物、乙烯.α-烯烴共聚物、丙烯.α-烯烴共聚物、丁烯.α-烯烴共聚物、乙烯.丙烯.α-烯烴共聚物、乙烯.丁烯.α-烯烴共聚物、丙烯.丁烯.α-烯烴共聚物以及乙烯.丙烯.丁烯.α-烯烴共聚物所成群組的樹脂。此等當中,以乙烯.丙烯共聚物為佳。As an example of olefinic elastomers, can be cited, including at least one selected from ethylene. Propylene copolymer, ethylene. α-olefin copolymer, propylene. α-olefin copolymer, butene. α-olefin copolymer, ethylene. Propylene. α-olefin copolymer, ethylene. Butene. α-olefin copolymer, propylene. Butene. α-olefin copolymers and ethylene. Propylene. Butene. A group of resins consisting of α-olefin copolymers. Among these, ethylene. Propylene copolymers are preferred.
構成基材11的層的任一者含有熱可塑性彈性體時,該層中的熱可塑性彈性體的含量,以1質量%以上為佳,特別是以10質量%以上為佳,進一步以15質量%以上為佳。此外,上述含量以90質量%以下為佳,特別是以80質量%以下為佳,進一步以70質量%以下為佳。藉由熱可塑性彈性體的含量於上述範圍,本實施形態相關的工件加工用片1變得易於獲得更良好的切削片抑制效果。When any one of the layers constituting the
且,構成基材11的層,雖然可含有苯乙烯系彈性體作為熱可塑性彈性體,但從易於獲得更良好的切削片抑制效果的觀點而言,以其含量越少越好,特別是構成基材11的層,以實質上不含有苯乙烯系彈性體為佳。且,在本說明書中,所謂「苯乙烯系彈性體」,是指含有來自苯乙烯或其衍生物(苯乙烯系化合物)的構造單元的共聚物,在包括常溫在內的區域,具有橡膠狀的彈性,並且具有熱可塑性的材料。Moreover, although the layer constituting the
構成基材11的層含有苯乙烯系彈性體時,其含量以未達10質量%為佳,特別是以5質量%以下為佳,進一步以1質量%以下為佳。且,上述所謂實質上不含有苯乙烯系彈性體的情況,具體而言,是指構成基材11的層中的苯乙烯系彈性體的含量為0.2質量%以下。When the layer constituting the
(1-4)其他成分
構成基材11的層,亦可含有除了上述抗靜電劑、聚烯烴系樹脂以及熱可塑性彈性體以外的其他成分。特別是,該樹脂組合物中,亦可含有一般工件加工用片的基材中可使用的成分。
(1-4) Other ingredients
The layer constituting the
作為此類成分的例子,可列舉,阻燃劑、塑化劑、潤滑劑、抗氧化劑、著色劑、紅外線吸收劑、紫外線吸收劑、離子捕捉劑等的各種添加劑。作為此等添加劑的含量,雖然無特別限定,但以基材能發揮期望的機能的範圍為佳。Examples of such components include various additives such as flame retardants, plasticizers, lubricants, antioxidants, colorants, infrared absorbers, ultraviolet absorbers, and ion scavengers. The content of these additives is not particularly limited, but is preferably within a range in which the base material can exhibit desired functions.
(1-5)基材的表面處理
在基材11中積層有黏著劑層12的面上,為了提高與該黏著劑層12的密著性,亦可實施底塗處理、電暈處理、電漿處理、粗糙化處理(鈍面處理)等的表面處理。作為粗糙化處理,可列舉,例如,壓紋加工法、噴砂加工法等。此等當中,以實施電暈處理為佳。
(1-5) Surface treatment of substrate
On the surface of the
(1-6)基材的製法
本實施形態中的基材11的製造方法並無特別限定,例如,可使用T模法、圓模法等的熔融擠出法;壓延法;乾式法、濕式法等的溶液法等。此等當中,從效率良好地製造基材的觀點而言,以採用熔融擠出法為佳,特別是以採用T模法為佳。
(1-6) Manufacturing method of base material
The manufacturing method of the
此外,基材11藉由熔融擠出法製造時,將構成各層的成分各別混練,由所得的混練物直接,或是製造成暫時的錠粒,使用習知的擠出機,同時擠出複數層進行製膜。In addition, when the
(1-7)基材的物性等
基材11中的表面層111側的面的表面電阻率,以1.0×10
13Ω/□以下為佳,特別是以1.0×10
12Ω/□以下為佳,進一步以1.0×10
11Ω/□以下為佳。藉由上述表面電阻率為1.0×10
13Ω/□以下,本實施形態相關的工件加工用片1變得易於具有良好的抗靜電性。且,上述表面電阻率的下限值並無特別限定,例如,可以是1.0×10
8Ω/□以上,特別可以是1.0×10
9Ω/□以上。上述表面電阻率的測定方法的詳細情況,如下述試驗例中所記載。
(1-7) Physical properties of the base material, etc. The surface resistivity of the
本實施形態中的中間層112的厚度,以40μm以上為佳,特別是以50μm以上為佳,進一步以60μm以上為佳。藉由中間層112的厚度為40μm以上,變得易於抑制切削片的發生。此外,工件加工用片1變得易於具有適度的強度,變得易於良好地支撐被固定於工件加工用片1上的工件。中間層112的厚度以100μm以下為佳,特別是以90μm以下為佳,進一步以80μm以下為佳。藉由中間層112的厚度為100μm以下,工件加工用片1的厚度變得具有良好的柔軟性,例如,變得易於良好地進行延展。The thickness of the
本實施形態中的背面層113的厚度,以2μm以上為佳,特別是以4μm以上為佳,進一步以8μm以上為佳。藉由背面層113的厚度為2μm以上,工件加工用片1變得易於具有良好的抗靜電性。此外,背面層113的厚度以40μm以下為佳,特別是以30μm以下為佳,進一步以25μm以下為佳。藉由背面層112的厚度為40μm以下,工件加工用片1的厚度變得具有良好的柔軟性,例如,變得易於良好地進行延展。The thickness of the
(2)黏著劑層
作為構成本實施形態中的黏著劑層12的黏著劑,只要能夠發揮對於被附著物充分的黏著力(特別是,成為如同足夠用於進行工件的加工般的對工件黏著力),則無特別限定。作為構成黏著劑層12的黏著劑的例子,可列舉,丙烯酸系黏著劑、橡膠系黏著劑、矽酮系黏著劑、氨酯系黏著劑、聚酯系黏著劑、聚乙烯醚系黏著劑等。此等當中,從易於發揮期望的黏著力的觀點而言,以使用丙烯酸系黏著劑為佳。
(2) Adhesive layer
As the adhesive constituting the
構成本實施形態中的黏著劑層12的黏著劑,雖然是可以不具有活性能量線硬化性的黏著劑,但以具有活性能量線硬化性的黏著劑(以下,有時稱為「活性能量線硬化性黏著劑」)為佳。藉由黏著劑層12為由活性能量線硬化性黏著劑所構成,藉由活性能量線的照射,使黏著劑層12硬化,可易於降低工件加工用片1對於被附著物的黏著力。特別是,藉由活性能量線的照射,變得能夠容易地將加工後的工件從該工件加工用片1進行分離。The adhesive constituting the
作為構成黏著劑層12的活性能量線硬化性黏著劑,可以是以具有活性能量線硬化性的聚合物當作主成分者,也可以是以活性能量線非硬化性聚合物(不具有活性能量線硬化性的聚合物)與具有至少1個以上的活性能量線硬化性基的單體及/或寡聚物的混合物當作主成分者。此外,活性能量線硬化性黏著劑也可以是具有活性能量線硬化性的聚合物,與具有至少1個以上的活性能量線硬化性基的單體及/或寡聚物的混合物。The active energy ray-curable adhesive constituting the
上述具有活性能量線硬化性的聚合物,以在側鏈導入有具有活性能量線硬化性的官能基(活性能量線硬化性基)的(甲基)丙烯酸酯聚合物(以下,有時稱為「活性能量線硬化性聚合物」)為佳。此活性能量線硬化性聚合物,以具有含官能基的單體單元的丙烯酸系聚合物,與具有鍵結在該官能基的官能基的含不飽和基化合物進行而反應所獲得者為佳。且,在本說明書中,(甲基)丙烯酸是指丙烯酸以及甲基丙烯酸兩者的意思。其他類似用語亦相同。再者,「聚合物」為亦包括「共聚物」的概念者。The aforementioned active energy ray curable polymer is a (meth)acrylate polymer (hereinafter, sometimes referred to as "Active energy ray-curable polymer") is preferable. The active energy ray curable polymer is preferably obtained by reacting an acrylic polymer having a functional group-containing monomer unit with an unsaturated group-containing compound having a functional group bonded to the functional group. In addition, in this specification, (meth)acrylic acid means both acrylic acid and methacrylic acid. The same applies to other similar terms. In addition, "polymer" is a concept which also includes a "copolymer".
上述具有含官能基的單體單元的丙烯酸系聚合物,也可以是含官能基的單體,使其與其他單體聚合而成者。作為此類含官能基的單體以及其他單體,還有上述含不飽和基化合物,可使用習知者,例如,可使用國際公開第2018/084021號中所揭示者。The above-mentioned acrylic polymer having a functional group-containing monomer unit may be a functional group-containing monomer polymerized with another monomer. As such functional group-containing monomers and other monomers, as well as the above-mentioned unsaturated group-containing compounds, known ones can be used, for example, those disclosed in International Publication No. 2018/084021 can be used.
上述活性能量線硬化性聚合物的重量平均分子量,以1萬以上為佳,特別是以15萬以上為佳,進一步以20萬以上為佳。此外,該重量平均分子量以150萬以下為佳,特別是以100萬以下為佳。且,本說明書中的重量平均分子量(Mw)為藉由凝膠滲透層析法(GPC法)所測定的換算標準聚苯乙烯的值。The weight average molecular weight of the active energy ray-curable polymer is preferably at least 10,000, particularly preferably at least 150,000, and further preferably at least 200,000. In addition, the weight average molecular weight is preferably at most 1,500,000, especially preferably at most 1,000,000. In addition, the weight average molecular weight (Mw) in this specification is the value of conversion standard polystyrene measured by the gel permeation chromatography (GPC method).
作為上述活性能量線非硬化性聚合物成分,例如,可使用含不飽和基化合物在被反應之前的上述丙烯酸系聚合物。As the above-mentioned active energy ray non-hardening polymer component, for example, the above-mentioned acrylic polymer before the unsaturated group-containing compound is reacted can be used.
作為上述活性能量線非硬化性聚合物成分的丙烯酸系聚合物的重量平均分子量,以1萬以上為佳,特別是以15萬以上為佳,進一步以20萬以上為佳。此外,該重量平均分子量以150萬以下為佳,特別是以100萬以下為佳。The weight average molecular weight of the acrylic polymer as the active energy ray non-curable polymer component is preferably at least 10,000, particularly preferably at least 150,000, and further preferably at least 200,000. In addition, the weight average molecular weight is preferably at most 1,500,000, especially preferably at most 1,000,000.
此外,作為上述具有至少1個以上的活性能量線硬化性基的單體及/或寡聚物,例如,可使用多元醇與(甲基)丙烯酸的酯等。In addition, as the above-mentioned monomer and/or oligomer having at least one active energy ray-curable group, for example, an ester of a polyhydric alcohol and (meth)acrylic acid or the like can be used.
且,使用紫外線,作為用以使活性能量線硬化性黏著劑硬化的活性能量線時,對於該黏著劑,以添加光聚合起始劑為佳。此外,該黏著劑中亦可添加活性能量線非硬化性聚合物成分或寡聚物成分、交聯劑等。Furthermore, when ultraviolet rays are used as the active energy rays for curing the active energy ray-curable adhesive, it is preferable to add a photopolymerization initiator to the adhesive. In addition, an active energy ray non-hardening polymer component or oligomer component, a crosslinking agent, and the like may be added to the adhesive.
本實施形態中的黏著劑層12的厚度,以1μm以上為佳,特別是以3μm以上為佳,進一步以5μm以上為佳。此外,黏著劑層12的厚度以70μm以下為佳,特別是以30μm以下為佳,進一步以15μm以下為佳。藉由黏著劑層12的厚度於上述範圍,本實施形態相關的工件加工用片1變得易於發揮期望的黏著性。The thickness of the
(3)剝離片
本實施形態相關的工件加工用片1,亦可在黏著劑層12中與基材11相反側的面(以下,有時稱為「黏著面」)貼附至工件為止的期間,以保護該面為目的,在該面積層剝離片。
(3) Peeling sheet
The sheet 1 for workpiece processing according to this embodiment may protect the surface of the
上述剝離片的構成為任意,舉例將塑膠膜藉由剝離劑等進行剝離處理者。作為該塑膠膜的具體例,可列舉,聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯、聚萘二甲酸乙二酯等的聚酯膜,以及聚丙烯、聚乙烯等的聚烯烴膜。作為上述剝離劑,可使用矽酮系、氟系、長鏈烷基系等,此等當中,以便宜且可獲得穩定性能的矽酮系為佳。The structure of the above-mentioned release sheet is optional, and an example is one in which a plastic film is peeled with a release agent or the like. Specific examples of the plastic film include polyester films such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate, and polyester films such as polypropylene and polyethylene. Polyolefin film. As the above-mentioned release agent, silicone-based, fluorine-based, long-chain alkyl-based, etc. can be used, and among them, silicone-based, which is inexpensive and can obtain stable performance, is preferable.
關於上述剝離片的厚度並無特別限制,例如,可以是16μm以上,250μm以下。The thickness of the release sheet is not particularly limited, and may be, for example, not less than 16 μm and not more than 250 μm.
(4)其他
本實施形態相關的工件加工用片1,亦可在黏著劑層12中與基材11相反側的面積層接著劑層。此時,本實施形態相關的工件加工用片1,可作為切割.晶粒黏合片使用。該片藉由在接著劑層中與黏著劑層12相反側的面貼附工件,切割該工件連同接著劑層,可獲得經個片化的積層有接著劑層的晶片。該晶片藉由此經個片化的接著劑層,變得易於固定在搭載有該晶片的對象上。作為構成上述接著劑層的材料,以使用含有熱可塑性樹脂與低分子量的熱硬化性接著成分者,含有B階段(半硬化狀)的熱硬化型接著成分者等為佳。
(4) Others
In the workpiece processing sheet 1 according to this embodiment, an adhesive layer may be formed on the surface of the
此外,本實施形態相關的工件加工用片1,亦可在黏著劑層12中的黏著面積層保護膜形成層。此時,本實施形態相關的工件加工用片1,可作為保護膜形成兼切割用片使用。此類的片藉由在保護膜形成層中與黏著劑層12相反側的面上貼附工件,切割該工件連同保護膜形成層,可獲得經個片化的積層有保護膜形成層的晶片。作為該工件,以使用在單面形成有迴路者為佳,此時,通常,在與形成有該迴路的面相反側的面上積層保護膜形成層。經個片化的保護膜形成層,藉由在特定的時機使其硬化,可將具有充分耐久性的保護膜形成於晶片上。保護膜形成層以由未硬化的硬化性接著劑所形成為佳。In addition, in the workpiece processing sheet 1 according to this embodiment, a protective film forming layer may be formed on the adhesive surface of the
2.工件加工用片的物性
本實施形態相關的工件加工用片1,紫外線照射前的黏著劑層12中與基材11相反側的面(黏著面)的表面電阻率,以1.0×10
13Ω/□以下為佳,特別是以1.0×10
12Ω/□以下為佳,進一步以1.0×10
11Ω/□以下為佳。藉由上述表面電阻率為1.0×10
13Ω/□以下,本實施形態相關的工件加工用片1變得易於具有良好的抗靜電性。且,上述表面電阻率的下限值並無特別限定,例如,可以是1.0×10
8Ω/□以上,特別可以是1.0×10
9Ω/□以上。上述表面電阻率的測定方法的詳細情形如下述試驗例中所記載。
2. Physical properties of workpiece processing sheet In the workpiece processing sheet 1 according to this embodiment, the surface resistivity of the surface (adhesive surface) of the
3.工件加工用片的製造方法
本實施形態相關的工件加工用片1的製造方法並無特別限定。例如,以藉由在剝離片上形成黏著劑層12後,該黏著劑層12中與剝離片相反側的面積層基材11的單面,可獲得工件加工用片1為佳。
3. Manufacturing method of sheet for workpiece processing
The method of manufacturing the workpiece processing sheet 1 according to this embodiment is not particularly limited. For example, after forming the
上述黏著劑層12的形成,可藉由已知的方法進行。例如,調製用以形成黏著劑層12的黏著性組合物,以及依照需要進一步含有溶媒或分散媒的塗佈液。然後,在剝離片具有剝離性的面(以下,有時稱為「剝離面」)塗佈上述塗佈液。接著,藉由使所得的塗膜乾燥,可形成黏著劑層12。Formation of the above-mentioned
上述塗佈液的塗佈可藉由已知的方法進行,例如,可藉由桿塗佈法、刀式塗佈法、輥塗佈法、翼片塗佈法、模具塗佈法、凹版塗佈法等進行。且,塗佈液只要是可進行塗佈的話,其特性並無特別限定,用以形成黏著劑層12的成分,有時作為溶質含有,有時也作為分散質含有。此外,剝離片亦可作為製程材料進行剝離,亦可在貼附至被附著物為止的期間,保護黏著劑層12。Coating of the above-mentioned coating liquid can be carried out by a known method, for example, by rod coating method, knife coating method, roll coating method, blade coating method, die coating method, gravure coating method, etc. Buffalo and so on. Furthermore, the properties of the coating liquid are not particularly limited as long as it can be applied, and the components for forming the
當用以形成黏著劑層12的黏著性組合物含有上述交聯劑時,以藉由變更上述乾燥的條件(溫度、時間等),或藉由額外設置加熱處理,使塗膜內的聚合物成分與交聯劑進行交聯反應,於黏著劑層12內以期望的存在密度形成交聯構造為佳。再者,為了使上述交聯反應充分進行,於黏著劑層12與基材11貼合後,例如,亦可在23℃,相對溼度50%的環境中靜置數日期間,進行所謂的熟成。When the adhesive composition used to form the
4.工件加工用片的使用方法 本實施形態相關的工件加工用片1,可使用在用於半導體晶圓等的工件的加工。換言之,本實施形態相關的工件加工用片1的黏著面貼附在工件後,可於工件加工用片1上,進行工件的加工。對應該加工,本實施形態相關的工件加工用片1,作為背面研磨片、切割片、延展片、撿晶片等使用。在此,作為工件的例子,可列舉,半導體晶圓、半導體封裝等的半導體構件、玻璃板等的玻璃構件。 4. How to use the sheet for workpiece processing The workpiece processing sheet 1 according to this embodiment can be used for processing workpieces such as semiconductor wafers. In other words, after the adhesive surface of the workpiece processing sheet 1 according to this embodiment is attached to the workpiece, the workpiece can be processed on the workpiece processing sheet 1 . For this processing, the workpiece processing sheet 1 according to this embodiment is used as a back grinding sheet, a dicing sheet, a stretching sheet, a wafer pickup, and the like. Here, examples of the workpiece include semiconductor members such as semiconductor wafers and semiconductor packages, and glass members such as glass plates.
本實施形態相關的工件加工用片1,如上述,在使用旋轉的丸刃的切割中使用時,可良好地抑制切削片,特別是細絲狀的切削片的發生。因此,本實施形態相關的工件加工用片1,於上述工件加工用片當中,特別適合做為切割片使用。The workpiece machining sheet 1 according to the present embodiment can satisfactorily suppress the occurrence of cutting chips, particularly filamentous cutting chips, when used for cutting using a rotating shot blade as described above. Therefore, the workpiece processing sheet 1 according to the present embodiment is particularly suitable for use as a dicing sheet among the above-mentioned workpiece processing sheets.
再者,本實施形態相關的工件加工用片1,如上述,具有優良的抗靜電性。本實施形態相關的工件加工用片1,可抑制將剝離片進行分離時,將工件進行分離時的剝離靜電。再者,本實施形態相關的工件加工用片1,於清洗盤將工件加工用片以固定的狀態,進行晶片的洗淨以及乾燥後,從清洗盤將工件加工用片拉離時的剝離靜電亦可有效地抑制。因此,本實施形態相關的工件加工用片1,也適合使用於此類的洗淨.乾燥。Furthermore, the workpiece processing sheet 1 according to this embodiment has excellent antistatic properties as described above. The workpiece processing sheet 1 according to this embodiment can suppress the peeling static electricity when separating the peeling sheet and separating the workpiece. Furthermore, in the workpiece processing sheet 1 related to this embodiment, the peeling static electricity when the workpiece processing sheet is pulled away from the cleaning tray after washing and drying the wafer with the workpiece processing sheet in a fixed state on the cleaning tray can also be effectively suppressed. Therefore, the workpiece processing sheet 1 related to this embodiment is also suitable for this type of cleaning. dry.
且,本實施形態相關的工件加工用片1具備上述接著劑層時,該工件加工用片1可作為切割.晶粒黏合片使用。再者,本實施形態相關的工件加工用片1具備上述保護膜形成層時,該工件加工用片1可作為保護膜形成兼切割用片使用。And, when the sheet 1 for workpiece processing related to this embodiment is equipped with the above-mentioned adhesive layer, the sheet 1 for workpiece processing can be used as a cutter. Die-bonding sheets are used. Furthermore, when the workpiece processing sheet 1 according to this embodiment is provided with the above-mentioned protective film forming layer, the workpiece processing sheet 1 can be used as a protective film forming and dicing sheet.
此外,本實施形態相關的工件加工用片1中的黏著劑層12,為由上述活性能量線硬化性黏著劑所構成時,在使用的時刻,以如後續的活性能量線的照射為佳。換言之,於工件加工用片1上完成工件的加工,將加工後的工件從工件加工用片1進行分離時,以在該分離之前,對黏著劑層12照射活性能量線為佳。如此一來,黏著劑層12硬化,對加工後的工件的黏著片的黏著力良好地降低,加工後的工件的分離變得容易。In addition, when the
以上說明的實施形態,為用於本發明的理解所記載者,並非用以限定本發明。因此,上述實施形態中所揭示的各要素,其主旨為包括在本發明所屬技術範圍的全部設計變更、均等物。The embodiments described above are described for the understanding of the present invention, and are not intended to limit the present invention. Therefore, each element disclosed in the above embodiment is intended to include all design changes and equivalents within the technical scope of the present invention.
例如,在本實施形態相關的工件加工用片1中的基材11與黏著劑層12之間,或是基材11中與黏著劑層12相反側的面,亦可積層其他的層。此外,在表面層111中與中間層112相反側的面,表面層111與中間層112之間,中間層112與背面層113之間,以及背面層113中與中間層112相反側的面,亦可分別積層其他的層。
[實施例]
For example, another layer may be laminated between the
以下,雖然藉由實施例等進一步具體說明本發明,但本發明的範圍並不限定於此等實施例等。Hereinafter, although an Example etc. demonstrate this invention more concretely, the scope of the present invention is not limited to these Examples etc.
[實施例1] (1)基材的製作 將隨機聚丙烯樹脂(Japan Polypropylene Corporation製,商品名「Novatec FX3B」)36質量份,烯烴系熱可塑性彈性體(Japan Polypropylene Corporation製,商品名「WELNEX RFX4V」)59質量份,以及抗靜電劑(三洋化成公司製,商品名「PELECTRON PVL」)5質量份,使其各別乾燥後,藉由於雙軸混鍊機進行混鍊,獲得表面層用以及背面層用的錠粒。 [Example 1] (1) Preparation of base material 36 parts by mass of random polypropylene resin (manufactured by Japan Polypropylene Corporation, trade name "Novatec FX3B"), 59 parts by mass of olefin-based thermoplastic elastomer (manufactured by Japan Polypropylene Corporation, trade name "WELNEX RFX4V"), and antistatic agent ( Sanyo Chemical Co., Ltd., trade name "PELECTRON PVL") 5 parts by mass were dried separately, and mixed by a biaxial mixer to obtain pellets for the surface layer and the back layer.
此外,將隨機聚丙烯樹脂(Japan Polypropylene Corporation製,商品名「Novatec FX3B」)38質量份,以及烯烴系熱可塑性彈性體(Japan Polypropylene Corporation製,商品名「WELNEX RFX4V」)62質量份,使其各別乾燥後,藉由於雙軸混鍊機進行混鍊,獲得中間層用錠粒。In addition, 38 parts by mass of a random polypropylene resin (manufactured by Japan Polypropylene Corporation, trade name "Novatec FX3B") and 62 parts by mass of an olefin-based thermoplastic elastomer (manufactured by Japan Polypropylene Corporation, trade name "WELNEX RFX4V") were mixed to make After each drying, the pellets for the intermediate layer were obtained by mixing with a twin-shaft mixer.
使用如上述所獲得的2種錠粒,藉由小型T模擠出機(東洋精機製作所公司製,商品名「LABO PLASTOMILL」)進行共擠出成形(coextrusion molding),獲得依序積層厚度4μm的表面層與厚度72μm的中間層與厚度4μm的背面層而成的3層構造的基材。Using the two types of ingots obtained above, coextrusion molding was carried out with a small T-die extruder (manufactured by Toyo Seiki Seisakusho Co., Ltd., trade name "LABO PLASTOMILL") to obtain a sequentially laminated layer with a thickness of 4 μm. A base material with a three-layer structure consisting of a surface layer, an intermediate layer with a thickness of 72 μm, and a back layer with a thickness of 4 μm.
(2)黏著性組合物的調製 將丙烯酸正丁酯62質量份,甲基丙烯酸甲酯10質量份,丙烯酸2-羥乙酯28質量份,藉由溶液聚合法使其聚合,獲得(甲基)丙烯酸酯聚合物。接著,添加相當於相對構成上述(甲基)丙烯酸酯聚合物的丙烯酸2-羥乙酯80莫耳%的量的2-異氰酸甲基丙烯醯氧乙基酯(methacryloyloxyethyl isocyanate,MOI)的同時,將作為含錫觸媒的二月桂酸二丁基錫(dibutyltin dilaurate,DBTDL),相對於上述(甲基)丙烯酸酯聚合物100質量份,以0.13質量份的量添加。隨後,藉由在50℃使其反應24小時,獲得在側鏈導入有活性能量線硬化性基的(甲基)丙烯酸酯聚合物。該活性能量線硬化型聚合物的重量平均分子量,藉由下述方法進行測定,為50萬。 (2) Preparation of adhesive composition 62 parts by mass of n-butyl acrylate, 10 parts by mass of methyl methacrylate, and 28 parts by mass of 2-hydroxyethyl acrylate were polymerized by a solution polymerization method to obtain a (meth)acrylate polymer. Next, 2-methacryloyloxyethyl isocyanate (MOI) was added in an amount corresponding to 80 mole % of 2-hydroxyethyl acrylate constituting the (meth)acrylate polymer. At the same time, dibutyltin dilaurate (DBTDL), which is a tin-containing catalyst, was added in an amount of 0.13 parts by mass relative to 100 parts by mass of the (meth)acrylate polymer. Then, by making it react at 50 degreeC for 24 hours, the (meth)acrylate polymer which introduced the active energy ray curable group into a side chain was obtained. The weight average molecular weight of this active energy ray curable polymer was measured by the following method, and it was 500,000.
將上述所得的於側鏈導入有活性能量線硬化性基的(甲基)丙烯酸酯聚合物100質量份(換算固形份,以下相同),作為光聚合起始劑的2-羥基-1-{4-[4-(2-羥基-2-甲基-丙醯基)-苯甲基]苯基}-2-甲基-丙烷-1-酮(BASF公司製,商品名「Omnirad 127」)2質量份,作為交聯劑的三羥甲基丙烷改質甲伸苯基二異氰酸酯(東曹股份有限公司製,商品名「Coronate L」)1質量份於溶媒中進行混合,獲得黏著性組合物的塗佈液。100 parts by mass of the (meth)acrylate polymer obtained above having an active energy ray-curable group introduced into the side chain (in terms of solid content, the same applies hereinafter), 2-hydroxyl-1-{ 4-[4-(2-Hydroxy-2-methyl-propionyl)-benzyl]phenyl}-2-methyl-propan-1-one (manufactured by BASF, trade name "Omnirad 127") 2 parts by mass and 1 part by mass of trimethylolpropane-modified toluene diisocyanate (manufactured by Tosoh Co., Ltd., trade name "Coronate L") as a crosslinking agent were mixed in a solvent to obtain an adhesive composition Coating solution for objects.
(3)黏著劑層的形成 對於在厚度38μm的聚對苯二甲酸乙二酯膜的單面上由矽酮系的剝離劑層形成而成的剝離片(LINTEC Corporation製,商品名「SP-PET381031」)的剝離面,塗佈在上述步驟(2)所得的黏著性組合物的塗佈液,藉由加熱使其乾燥,獲得由在剝離片上形成厚度5μm的黏著劑層而成的積層體。 (3) Formation of adhesive layer On the release surface of a release sheet (manufactured by LINTEC Corporation, trade name "SP-PET381031") formed by a silicone-based release agent layer on one side of a polyethylene terephthalate film with a thickness of 38 μm, coat The coating solution of the adhesive composition obtained in the above step (2) was spread and dried by heating to obtain a laminate in which an adhesive layer with a thickness of 5 μm was formed on the release sheet.
(4)黏著片的製作 藉由在上述步驟(1)所得的基材中的表面層側的面實施電暈處理後,將該電暈處理面,與上述步驟(3)所得的積層體中的黏著劑層側的面貼合,獲得工件加工用片。 (4) Production of adhesive sheets After performing corona treatment on the surface layer side surface of the base material obtained in the above step (1), the corona treated surface and the adhesive layer side surface of the laminate obtained in the above step (3) Bonded to obtain a sheet for workpiece processing.
在此,上述重量平均分子量(Mw)為使用凝膠滲透層析儀(GPC)在以下條件所測定(GPC測定)的換算標準聚苯乙烯的重量平均分子量。 <測定條件> .測定裝置:東曹股份有限公司製,HLC-8320 .GPC管柱(依以下的順序通過):東曹股份有限公司製 TSK gel super H-H TSK gel super HM-H TSK gel super H2000 .測定溶媒:四氫呋喃 .測定溫度:40℃ Here, the said weight average molecular weight (Mw) is the weight average molecular weight of the conversion standard polystyrene measured (GPC measurement) using the gel permeation chromatography (GPC) under the following conditions. <Measurement conditions> . Measuring device: Tosoh Co., Ltd., HLC-8320 . GPC column (pass through in the following order): manufactured by Tosoh Co., Ltd. TSK gel super H-H TSK gel super HM-H TSK gel super H2000 . Determination of solvent: tetrahydrofuran . Measuring temperature: 40°C
[實施例2~6,比較例1~2] 除了將用以形成基材的各層的錠粒的組成以及各層的厚度,變更如表1中所記載以外,其餘與實施例1同樣地獲得工件加工用片。 [Examples 2-6, Comparative Examples 1-2] Sheets for workpiece processing were obtained in the same manner as in Example 1, except that the composition of the ingot forming each layer of the base material and the thickness of each layer were changed as described in Table 1.
[試驗例1](表面電阻率的測定) 實施例以及比較例所製造的基材,在23℃,50%相對溼度下,濕度調控24小時後,表面層側的面的表面電阻率,使用DIGITAL ELECTROMETER (ADVANTEST公司製),在施加電壓100V進行測定。結果如表2所示。 [Test Example 1] (Measurement of Surface Resistivity) For the substrates produced in Examples and Comparative Examples, after humidity control for 24 hours at 23°C and 50% relative humidity, the surface resistivity of the surface on the surface layer side was measured using a DIGITAL ELECTROMETER (manufactured by ADVANTEST) at an applied voltage of 100V. To measure. The results are shown in Table 2.
此外,在實施例以及比較例所製造的工件加工用片裁斷成100mm×100mm,將此當作表面電阻率測定用樣品。該表面電阻率測定用樣品,在23℃,50%相對溼度下,濕度調控24小時後,將剝離片剝離,露出的黏著劑層側的面(黏著面)的表面電阻率,與上述同樣地進行測定。此結果亦表示於表2中。In addition, the pieces for workpiece processing manufactured in the examples and comparative examples were cut into 100 mm×100 mm, and this was used as a sample for surface resistivity measurement. The surface resistivity of the sample for measuring the surface resistivity was controlled at 23°C and 50% relative humidity for 24 hours, and then the peeling sheet was peeled off, and the surface resistivity of the exposed side of the adhesive layer (adhesive surface) was the same as above. To measure. The results are also shown in Table 2.
[試驗例2](切削片抑制效果的評價) 從實施例以及比較例所製造的工件加工用片將剝離片剝離後,使用貼膜機(LINTEC Corporation製,商品名「RAD2500m/12」),將露出的黏著劑層的露出面,貼附在6英吋的矽晶圓的單面。接著,在工件加工用片中的上述露出面的周圍部(與矽晶圓未重疊的位置),附著在切割用環形框架。再者,配合環形框架的外徑,裁斷工件加工用片。 [Test Example 2] (Evaluation of Chip Suppression Effect) After the release sheet was peeled off from the workpiece processing sheets manufactured in Examples and Comparative Examples, the exposed surface of the exposed adhesive layer was attached to a 6 inch silicon wafer. Next, a ring frame for dicing is attached to the periphery of the above-mentioned exposed surface of the workpiece processing sheet (position not overlapping the silicon wafer). Furthermore, the workpiece processing sheet is cut in accordance with the outer diameter of the ring frame.
隨後,藉由使用切割裝置(Disco Corporation製,商品名「DFD6362」),在以下的切割條件進行切割,將矽晶圓進行個片化成為具有5mm×5mm尺寸的晶片。 切割條件 晶圓的厚度:150μm 刀刃:以下的Z1以及Z2,皆Disco Corporation製 Z1:商品名「ZH05-SD3000-50DD」 Z2:商品名「NBC-SD3000-50BB」 刀刃轉速 Z1:55000rpm Z2:45000rpm 切削速度:20mm/sec 刀刃高度 Z1:0.135mm Z2:0.065mm 切削水量:1.0L/min 切削水溫度:25℃ Subsequently, by using a dicing device (manufactured by Disco Corporation, trade name "DFD6362"), dicing was performed under the following dicing conditions, and the silicon wafer was singulated into wafers having a size of 5 mm×5 mm. cutting conditions Wafer thickness: 150μm Blades: Z1 and Z2 below are made by Disco Corporation Z1: Product name "ZH05-SD3000-50DD" Z2: Product name "NBC-SD3000-50BB" Blade speed Z1: 55000rpm Z2: 45000rpm Cutting speed: 20mm/sec blade height Z1: 0.135mm Z2: 0.065mm Cutting water volume: 1.0L/min Cutting water temperature: 25°C
切割後,藉由將所得的晶片的表面,使用電子顯微鏡(KEYENCE公司製,商品名「VHZ-100」,倍率:300倍)進行觀察,計算切削片的數目。具體而言,計數存在於每1片晶圓的該切割線上的切削片的數目。然後,根據以下的基準,評價切削片抑制效果。切削片數以及評價結果表示於表2中。 ◎:切削片數為3個以下。 ○:切削片數超過3個,10個以下。 ×:切削片數超過10個。 After dicing, the surface of the obtained wafer was observed with an electron microscope (manufactured by KEYENCE, trade name "VHZ-100", magnification: 300 times), and the number of diced pieces was counted. Specifically, the number of chips present on the dicing line per one wafer is counted. Then, the chips suppressing effect was evaluated according to the following criteria. Table 2 shows the number of chips and evaluation results. ⊚: The number of chips is 3 or less. ◯: The number of chips is more than 3 and 10 or less. ×: The number of chips exceeds 10.
[試驗例3](抗靜電性的評價) 使用研磨機(Disco Corporation製,商品名「DFG8540」),研磨6英吋矽晶圓的單面,至厚度成為350μm為止。對於該研磨面,使用貼合機,貼附從實施例以及比較例所製造的工件加工用片將剝離片剝離後所露出的黏著劑層的露出面。 [Test Example 3] (Evaluation of Antistatic Property) Using a grinder (manufactured by Disco Corporation, trade name "DFG8540"), one side of a 6-inch silicon wafer was ground to a thickness of 350 μm. The exposed surface of the adhesive layer which peeled off the peeling sheet from the sheet|seat for workpiece processing manufactured in the Example and the comparative example was affixed to this polished surface using a bonding machine.
自貼附起20分鐘後,使用切割裝置(Disco Corporation製,商品名「DFD6362」),藉由在以下的切割條件進行切割,將矽晶圓進行個片化成為晶片。 切割條件 晶片尺寸:10mm×10mm 切割高度:60μm 刀刃:商品名「ZH05-SD2000-Z1-90 CC」 刀刃轉速:35000rpm 切削速度:60mm/sec 切削水量:1.0L/min 切削水溫度:20℃ After 20 minutes from the attachment, the silicon wafer was singulated into chips by dicing under the following dicing conditions using a dicing device (manufactured by Disco Corporation, trade name "DFD6362"). cutting conditions Chip size: 10mm×10mm Cutting height: 60μm Blade: Product name "ZH05-SD2000-Z1-90 CC" Blade speed: 35000rpm Cutting speed: 60mm/sec Cutting water volume: 1.0L/min Cutting water temperature: 20°C
切割後,將工件加工用片藉由吸附在清洗盤上以固定的狀態,進行如上述所得的晶片的洗淨以及乾燥。然後,從清洗盤將工件加工用片提起即刻的工件加工用片的靜電壓(V),使用測定器(Prostat公司製,商品名「PFK-100」),進行測定。然後,根據以下的基準,評價抗靜電性。靜電壓以及評價結果表示於表2中。 ◎:靜電壓為100V以下。 ○:靜電壓超過100V超,為500V以下。 ×:靜電壓超過500V。 After dicing, the workpiece processing sheet is held in a fixed state by being adsorbed on the cleaning plate, and the wafer obtained as described above is cleaned and dried. Then, the electrostatic voltage (V) of the workpiece processing sheet immediately after the workpiece processing sheet was lifted from the cleaning tray was measured using a measuring device (manufactured by Prostat, trade name "PFK-100"). Then, antistatic property was evaluated according to the following criteria. Table 2 shows the static voltage and evaluation results. ⊚: Static voltage is 100 V or less. ○: The static voltage exceeds 100V and is 500V or less. ×: Static voltage exceeds 500V.
[表1]
[表2]
由表2可清楚得知,實施例所製造的工件加工用片,良好地抑制切削片,同時顯示優良的抗靜電性。 [產業利用性] As can be clearly seen from Table 2, the workpiece processing sheets produced in the examples exhibit excellent antistatic properties while suppressing chipping well. [Industrial Utilization]
本發明的工件加工用片能夠適用於半導體晶圓等的工件的加工。The workpiece processing sheet of the present invention can be suitably used for processing workpieces such as semiconductor wafers.
1:工件加工用片 11:基材 111:表面層 112:中間層 113:背面層 12:黏著劑層 1: Sheet for workpiece processing 11: Substrate 111: surface layer 112: middle layer 113: back layer 12: Adhesive layer
[圖1] 為本發明一實施形態相關的工件加工用片的剖面圖。[ Fig. 1 ] is a cross-sectional view of a workpiece processing sheet according to an embodiment of the present invention.
1:工件加工用片 1: Sheet for workpiece processing
11:基材 11: Substrate
111:表面層 111: surface layer
112:中間層 112: middle layer
113:背面層 113: back layer
12:黏著劑層 12: Adhesive layer
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