TW202229665A - Crystal growth apparatus - Google Patents
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- TW202229665A TW202229665A TW110111817A TW110111817A TW202229665A TW 202229665 A TW202229665 A TW 202229665A TW 110111817 A TW110111817 A TW 110111817A TW 110111817 A TW110111817 A TW 110111817A TW 202229665 A TW202229665 A TW 202229665A
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- 239000013078 crystal Substances 0.000 title claims abstract description 85
- 239000007787 solid Substances 0.000 claims abstract description 59
- 239000011810 insulating material Substances 0.000 claims abstract description 24
- 239000002657 fibrous material Substances 0.000 claims description 69
- 238000004804 winding Methods 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 37
- 229910052710 silicon Inorganic materials 0.000 abstract description 37
- 239000010703 silicon Substances 0.000 abstract description 37
- 239000000835 fiber Substances 0.000 abstract description 16
- 230000000694 effects Effects 0.000 abstract description 11
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 239000012774 insulation material Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
本發明涉及半導體製造技術領域,尤其涉及一種拉晶裝置。The present invention relates to the technical field of semiconductor manufacturing, in particular to a crystal pulling device.
直拉法(Czochralski,Cz)是製備半導體及太陽能用矽單晶的一種重要方法,通過碳素材料組成的熱場對放入坩鍋的高純矽材料進行加熱使之熔化,之後通過將晶種浸入熔體當中並經過一系列(溶料、穩溫、引晶、放肩、等徑、收尾、冷卻)工藝過程,最終獲得單晶棒。Czochralski (Cz) is an important method for preparing silicon single crystals for semiconductors and solar energy. The high-purity silicon material put into the crucible is heated and melted by a thermal field composed of carbon materials. The seeds are immersed in the melt and go through a series of processes (melting, temperature stabilization, seeding, shoulder placement, equal diameter, finishing, cooling) to finally obtain a single crystal rod.
使用CZ法的半導體單晶矽或太陽能單晶矽的晶棒生長中,晶棒和矽熔體的溫度分佈直接影響晶棒的品質和生長速度。在CZ晶棒的生長期間,導流筒(或稱反射屏)作為拉晶熱場中的重要部件,是阻止矽熔體液面和石英坩鍋的熱量輻射到晶棒,起到提高拉晶速度和控制晶體的缺陷的作用。In the ingot growth of semiconductor monocrystalline silicon or solar monocrystalline silicon using the CZ method, the temperature distribution of the ingot and silicon melt directly affects the quality and growth rate of the ingot. During the growth of the CZ crystal rod, the guide tube (or reflective screen), as an important component in the crystal pulling heat field, prevents the heat of the silicon melt liquid level and the quartz crucible from radiating to the crystal rod, thus improving the crystal pulling effect. The role of speed and defects in controlling crystals.
參看圖1,顯示一種拉晶裝置的結構示意圖。如圖1所示,拉晶裝置包括爐體1,爐體1內設置有坩鍋11,坩鍋11外側設置有對其進行加熱的加熱器12,坩鍋11內容納有矽熔體13。在爐體1頂部設置有提拉裝置14,在提拉裝置14的帶動下,晶種從矽熔體液面提拉拉出晶棒10,為了實現晶棒的穩定增長,在爐體1底部還設置有驅動坩鍋11旋轉和上下移動的驅動裝置15以及設置在爐體外側用以對坩鍋內的矽熔體施加磁場的磁場施加裝置17。同時,繼續參看圖1,拉晶裝置還包括環繞晶棒10四周設置熱屏裝置。熱屏裝置包括有導流筒16,導流筒16設置為桶型,其作為熱屏裝置一方面用以在晶棒生長過程中隔離石英坩鍋以及坩鍋內的矽熔體對晶棒表面產生的熱輻射,提升晶棒的冷卻速度和軸向溫度梯度,增加晶棒生長速度,另一方面,影響矽熔體表面的熱場分佈,而避免晶棒的中心和邊緣的軸向溫度梯度差異過大,保證晶棒與矽熔體液面之間的穩定生長;同時導流筒還用以對從晶棒生長爐上部導入的惰性氣體進行導流,使之以較大的流速通過矽熔體表面,達到控制晶棒內氧含量和雜質含量的效果。在半導體晶棒生長過程中,在提拉裝置14的帶動下,晶棒10垂直向上穿過導流筒16。Referring to FIG. 1 , a schematic structural diagram of a crystal pulling device is shown. As shown in FIG. 1 , the crystal pulling device includes a
參看圖2,顯示一種導流筒的截面結構示意圖。如圖2所示,導流筒設置為環狀的筒形結構,由外筒161、內筒162,以及內外筒之間的隔熱材料163組成。隔熱材料的作用是阻止進入外筒的熱量傳遞到內筒,避免內筒的溫度升高,同時使面向內筒的晶體的熱不容易傳遞出來,使得晶棒的溫度梯度小。由於導流筒16與坩鍋11以及坩鍋內的矽熔體13之間的相對面在拉晶過程中不斷變化,如圖2所示,在導流筒底部位置,坩鍋以及坩鍋內的矽熔體的熱量需要通過底部較厚的隔熱材料163向內筒162傳遞,在導流筒上部位置,坩鍋以及坩鍋內的矽熔體的熱量需要通過上部較薄的隔熱材料163向內筒162傳遞。Referring to FIG. 2 , a schematic cross-sectional structure diagram of a guide tube is shown. As shown in FIG. 2 , the guide tube is arranged in an annular cylindrical structure, and is composed of an
目前的隔熱材料有軟氈和固氈之分。固氈以形狀穩定,性能穩定,在半導體晶體生長的熱場中廣泛使用。隔熱材料根據所需形狀由石墨纖維纏繞成筒狀固氈,最後在表面包裹處理後製成,如專利申請CN102367588A所公開的,石墨氈廣泛用於拉晶裝置的隔熱保溫層,其中在導流筒中,石墨氈通過設置在外導流筒和內導流筒之間進行隔熱。固氈由於其由纖維纏繞形成,其熱傳導和熱膨脹性能根據其纖維方向呈各向異性。就熱傳導係數而言,沿著纖維的延伸方向的熱傳導係數是沿著垂直於纖維的延伸方向的法線方向的2-3倍。如圖2所示,隔熱材料163由纖維沿著一個方向纏繞形成一個整體(圖2中隔熱材料163的線條示出為纖維),其中,在導流筒底部區域,熱量沿著纖維的延伸方向通過隔熱材料163傳遞到內筒162,而在導流筒上部區域,熱量沿著垂直於纖維的延伸方向的法線方向通過隔熱材料163傳遞到內筒162。由於沿著纖維的延伸方向的熱傳導係數較沿著垂直於纖維的延伸方向的法線方向的熱傳導係數較大,使得內筒底部的溫度較高,平均溫度達到1050℃,限制了晶棒的溫度通過內筒傳遞出來,從而使晶體的溫度梯度較小,降低了拉晶速度,影響了拉晶品質。The current insulation materials are divided into soft felt and solid felt. Solid felt is widely used in the thermal field of semiconductor crystal growth due to its stable shape and stable performance. The heat insulating material is wound by graphite fibers into a cylindrical solid felt according to the required shape, and finally made after surface wrapping treatment. In the guide cylinder, the graphite felt is provided between the outer guide cylinder and the inner guide cylinder for thermal insulation. Since the solid felt is formed by entanglement of fibers, its thermal conductivity and thermal expansion properties are anisotropic according to its fiber direction. In terms of thermal conductivity, the thermal conductivity along the direction of extension of the fibers is 2-3 times higher than along the normal direction perpendicular to the direction of extension of the fibers. As shown in FIG. 2 , the
為了解決現有技術中的問題,本發明提供了一種拉晶裝置。In order to solve the problems in the prior art, the present invention provides a crystal pulling device.
在發明內容部分中引入了一系列簡化形式的概念,這將在具體實施方式部分中進一步詳細說明。本發明的發明內容部分並不意味著要試圖限定出所要求保護的技術方案的關鍵特徵和必要技術特徵,更不意味著試圖確定所要求保護的技術方案的保護範圍。A series of concepts in simplified form have been introduced in the Summary section, which are described in further detail in the Detailed Description section. The Summary of the Invention section of the present invention is not intended to attempt to limit the key features and essential technical features of the claimed technical solution, nor is it intended to attempt to determine the protection scope of the claimed technical solution.
為了解決現有技術中的問題,本發明提供了一種拉晶裝置,包括導流筒。所述導流筒包括內筒、外筒和設置在內筒和外筒之間的隔熱材料,所述隔熱材料包括採用纖維材料繞製形成的筒狀固氈,其中,所述纖維材料的繞製方向靠近垂直於所述內筒側壁的法線方向,以使所述纖維材料的延伸方向靠近與所述導流筒的內筒側壁平行的方向。In order to solve the problems in the prior art, the present invention provides a crystal pulling device, which includes a guide tube. The guide tube includes an inner tube, an outer tube, and a heat insulating material disposed between the inner tube and the outer tube. The heat insulating material includes a cylindrical solid felt formed by winding a fibrous material, wherein the fibrous material The winding direction is close to the normal direction perpendicular to the side wall of the inner cylinder, so that the extending direction of the fiber material is close to the direction parallel to the side wall of the inner cylinder of the guide cylinder.
示例性地,所述導流筒包括從上到下的第一部分和第二部分,所述外筒包括外筒上部和外筒下部,所述內筒包括內筒上部和內筒下部,所述內筒上部與所述外筒上部以及位於所述內筒上部和所述外筒上部之間的第一固氈構成所述第一部分,所述內筒下部與所述外筒下部以及位於所述內筒下部和所述外筒下部之間的第二固氈構成所述第二部分Exemplarily, the guide tube includes a first part and a second part from top to bottom, the outer tube includes an upper part of the outer tube and a lower part of the outer tube, the inner tube includes an upper part of the inner tube and a lower part of the inner tube, the The upper part of the inner cylinder and the upper part of the outer cylinder and the first solid felt located between the upper part of the inner cylinder and the upper part of the outer cylinder constitute the first part, the lower part of the inner cylinder and the lower part of the outer cylinder and the The second solid felt between the lower part of the inner cylinder and the lower part of the outer cylinder constitutes the second part
示例性地,所述第二部分相對於所述第一部分向所述導流筒內側突出。Exemplarily, the second portion protrudes toward the inner side of the guide tube relative to the first portion.
示例性地,所述第一部分與所述第二部分的所述纖維材料的繞製方向不同。Exemplarily, the first portion and the second portion have different winding directions of the fibrous material.
示例性地,所述第一部分設置為圓柱形筒,所述第一部分中的所述第一固氈的纖維材料的繞製方向沿著靠近垂直於所述外筒上部的法線方向。Exemplarily, the first portion is provided as a cylindrical drum, and the winding direction of the fiber material of the first solid felt in the first portion is along a direction close to a normal line perpendicular to the upper portion of the outer drum.
示例性地,所述內筒下部包括水平設置的平面或者在半徑方向上向下傾斜的斜面,所述第二部分中的所述第二固氈的纖維材料的繞製方向沿著靠近垂直於所述內筒下部的法線方向。Exemplarily, the lower part of the inner cylinder comprises a horizontally arranged plane or an inclined plane inclined downward in the radial direction, and the winding direction of the fiber material of the second solid felt in the second part is along a direction close to the vertical direction. The normal direction of the lower part of the inner cylinder.
示例性地,所述第一部分中的所述第一固氈的纖維材料的延伸方向與垂直於所述內筒上部的側壁的法線的夾角的範圍為75-105°。Exemplarily, the range of the included angle between the extending direction of the fiber material of the first solid felt in the first part and the normal line perpendicular to the side wall of the upper part of the inner cylinder is 75-105°.
示例性地,所述第二部分中的所述第二固氈的纖維材料的延伸方向與垂直於所述內筒下部的法線之間的夾角的範圍為75-105°。Exemplarily, the range of the included angle between the extending direction of the fiber material of the second solid felt in the second part and the normal line perpendicular to the lower part of the inner cylinder is 75-105°.
示例性地,所述第一部分中的所述第一固氈的纖維材料的延伸方向與所述內筒上部的側壁平行。Exemplarily, the extending direction of the fiber material of the first solid felt in the first part is parallel to the side wall of the upper part of the inner cylinder.
示例性地,所述第二部分中的所述第二固氈的纖維材料的延伸方向與所述內筒下部平行。Exemplarily, the extending direction of the fiber material of the second solid felt in the second portion is parallel to the lower portion of the inner cylinder.
根據本發明的拉晶裝置,將用以形成隔熱材料的固氈的纖維材料繞製方向設置成靠近垂直於所述內筒側壁的法線方向,以使所述纖維材料的延伸方向靠近與所述導流筒的內筒側壁平行的方向,當熱量從坩鍋或坩鍋內的矽熔體通過導流筒側壁傳到內側時,由於熱量的傳導方向與纖維材料的延伸方向垂直從而減小了熱傳導的效率,使得隔熱材料的阻熱效果達到最大。According to the crystal pulling device of the present invention, the winding direction of the fiber material used to form the solid mat of the heat insulating material is set close to the normal direction perpendicular to the side wall of the inner cylinder, so that the extending direction of the fiber material is close to the In the direction parallel to the side wall of the inner cylinder of the guide tube, when the heat is transferred from the crucible or the silicon melt in the crucible to the inside through the side wall of the guide tube, the heat conduction direction is perpendicular to the extension direction of the fiber material, thereby reducing the heat. The efficiency of heat conduction is reduced, so that the heat resistance effect of the thermal insulation material is maximized.
在下文的描述中,給出了大量具體的細節以便提供對本發明更為徹底的理解。然而,對於本領域技術人員而言顯而易見的是,本發明可以無需一個或多個這些細節而得以實施。在其他的例子中,為了避免與本發明發生混淆,對於本領域周知的一些技術特徵未進行描述。In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other instances, some technical features known in the art have not been described in order to avoid obscuring the present invention.
為了徹底理解本發明,將在下列的描述中提出詳細的描述,以說明本發明的拉晶裝置。顯然,本發明的施行並不限於半導體技術領域技術人員所熟習的特殊細節。本發明的較佳實施例詳細描述如下,然而除了這些詳細描述外,本發明還可以具有其他實施方式。For a thorough understanding of the present invention, a detailed description will be set forth in the following description to illustrate the crystal pulling apparatus of the present invention. Obviously, the practice of the present invention is not limited to the specific details familiar to those skilled in the art of semiconductor technology. Preferred embodiments of the present invention are described in detail below, however, the present invention may have other embodiments in addition to these detailed descriptions.
應予以注意的是,這裡所使用的術語僅是為了描述具體實施例,而非意圖限制根據本發明的示例性實施例。如在這裡所使用的,除非上下文另外明確指出,否則單數形式也意圖包括複數形式。此外,還應當理解的是,當在本說明書中使用術語“包含”和/或“包括”時,其指明存在所述特徵、整體、步驟、操作、元件和/或組件,但不排除存在或附加一個或多個其他特徵、整體、步驟、操作、元件、組件和/或它們的組合。It should be noted that the terminology used herein is for the purpose of describing specific embodiments only, and is not intended to limit the exemplary embodiments in accordance with the present invention. As used herein, the singular forms are also intended to include the plural forms unless the context clearly dictates otherwise. Furthermore, it should also be understood that when the terms "comprising" and/or "comprising" are used in this specification, they indicate the presence of stated features, integers, steps, operations, elements and/or components, but do not exclude the presence or Addition of one or more other features, integers, steps, operations, elements, components and/or combinations thereof.
現在,將參照附圖更詳細地描述根據本發明的示例性實施例。然而,這些示例性實施例可以多種不同的形式來實施,並且不應當被解釋為只限於這裡所闡述的實施例。應當理解的是,提供這些實施例是為了使得本發明的公開徹底且完整,並且將這些示例性實施例的構思充分傳達給本領域普通技術人員。在附圖中,為了清楚起見,誇大了層和區域的厚度,並且使用相同的附圖標記表示相同的元件,因而將省略對它們的描述。Now, exemplary embodiments according to the present invention will be described in more detail with reference to the accompanying drawings. These exemplary embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. It should be understood that these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of these exemplary embodiments to those skilled in the art. In the drawings, the thicknesses of layers and regions are exaggerated for clarity, and the same reference numerals are used to denote the same elements, and thus their descriptions will be omitted.
為了解決現有技術中的問題,本發明提供了一種拉晶裝置,包括導流筒,所述導流筒包括內筒、外筒和設置在內筒和外筒之間的隔熱材料,所述隔熱材料包括採用纖維材料繞製形成的筒狀固氈,其中,所述纖維材料的繞製方向靠近垂直於所述內筒側壁的法線方向,以使所述纖維材料的延伸方向靠近與所述導流筒的內筒側壁平行的方向。In order to solve the problems in the prior art, the present invention provides a crystal pulling device, comprising a guide tube, the guide tube includes an inner tube, an outer tube, and a heat insulating material disposed between the inner tube and the outer tube, the The thermal insulation material includes a cylindrical solid felt formed by winding a fiber material, wherein the winding direction of the fiber material is close to the normal direction perpendicular to the side wall of the inner cylinder, so that the extending direction of the fiber material is close to the direction of the normal line. The direction in which the side walls of the inner cylinder of the guide cylinder are parallel.
下面參看圖3和圖4A-圖4C對根據本發明的一種拉晶裝置進行示例性介紹。圖3根據本發明的一個實施例的一種拉晶裝置的結構示意圖;圖4A為根據本發明的一個實施例的拉晶裝置中導流筒的結構示意圖;圖4B為根據本發明的另一個實施例的拉晶裝置中導流筒的結構示意圖;圖4C為根據本發明的另一個實施例的拉晶裝置中導流筒的結構示意圖。An exemplary description of a crystal pulling device according to the present invention will be given below with reference to FIG. 3 and FIGS. 4A-4C. 3 is a schematic structural diagram of a crystal pulling device according to an embodiment of the present invention; FIG. 4A is a structural schematic diagram of a guide tube in a crystal pulling device according to an embodiment of the present invention; FIG. 4B is another embodiment of the present invention FIG. 4C is a schematic structural diagram of the flow guide tube in the crystal pulling device according to another embodiment of the present invention.
如圖3所示,拉晶裝置包括爐體2,爐體2內設置有坩鍋21,坩鍋21外側設置有對其進行加熱的加熱器22,坩鍋21內容納有矽熔體23。在爐體2頂部設置有提拉裝置24,在提拉裝置24的帶動下,晶種從矽熔體液面提拉拉出晶棒20,為了實現晶棒的穩定增長,在爐體2底部還設置有驅動坩鍋21旋轉和上下移動的驅動裝置25以及設置在爐體外側用以對坩鍋內的矽熔體施加磁場的磁場施加裝置27。同時,繼續參看圖3,拉晶裝置還包括環繞晶棒20四周設置熱屏裝置。熱屏裝置包括有導流筒26,導流筒26設置為桶型,其作為熱屏裝置一方面用以在晶棒20生長過程中隔離石英坩鍋21以及坩鍋21內的矽熔體23對晶棒20表面產生的熱輻射,提升晶棒20的冷卻速度和軸向溫度梯度,增加晶棒20生長速度材料,另一方面,影響矽熔體23表面的熱場分佈,而避免晶棒20的中心和邊緣的軸向溫度梯度差異過大,保證晶棒20與矽熔體23液面之間的穩定生長;同時導流筒26還用以對從晶棒生長爐上部導入的惰性氣體進行導流,使之以較大的流速通過矽熔體23表面,達到控制晶棒20內氧含量和雜質含量的效果。在半導體晶棒20生長過程中,在提拉裝置24的帶動下,晶棒20垂直向上穿過導流筒26。As shown in FIG. 3 , the crystal pulling device includes a
參看圖4A,顯示根據本發明的一種拉晶裝置中的導流筒26的結構示意圖。導流筒26圍繞矽晶棒20設置為上下開口的筒狀結構,其關於中心軸對稱。其中,圖4A示出為導流筒26在矽晶棒20一側的截面結構示意圖。Referring to FIG. 4A , there is shown a schematic structural diagram of the
示例性的,筒形包括但不限於圓柱形筒狀結構,圓錐形筒狀結構等。Exemplarily, cylindrical shapes include, but are not limited to, cylindrical cylindrical structures, conical cylindrical structures, and the like.
如圖4A所示,導流筒26設置為圓柱形筒狀結構。As shown in FIG. 4A , the
導流筒26包括第一部分(虛線框26a中的部分)和第二部分(虛線框26b中的部分),導流筒26的外筒包括外筒上部261a和外筒下部261b,導流筒26的內筒包括內筒上部262a和內筒下部262b,隔熱材料包括由纖維材料繞製形成的固氈,其中包括第一固氈263a和第二固氈263b。The
如圖4A所示,外筒上部261a、內筒上部262a和位於外筒上部261a與內筒上部262a之間的第一固氈263a構成導流筒26的第一部分(虛線框26a中的部分),外筒下部261b、內筒下部262b和位於外筒下部261b與內筒下部262b之間的第二固氈263b構成導流筒26的第二部分(虛線框26b中的部分)。As shown in FIG. 4A , the
示例性的,內筒162和外筒161的材料設置為石墨。Exemplarily, the material of the
在本發明中,隔熱材料163設置為採用纖維材料繞製形成的筒狀固氈。In the present invention, the
示例性的,繞製隔熱材料的纖維材料包括玻璃纖維、石墨纖維等。Exemplary, fibrous materials of which the insulating material is wound include glass fibers, graphite fibers, and the like.
在本實施例中,採用石墨纖維繞製形成筒狀固氈作為隔熱材料。In this embodiment, a cylindrical solid felt is formed by winding graphite fibers as the heat insulating material.
示例性的,如圖4A所示,所述第二部分(虛線框26b中的部分)相對於所述第一部分虛線框26a中的部分,向所述導流筒26內側突出。Exemplarily, as shown in FIG. 4A , the second part (the part in the dashed
導流筒26一方面作為熱屏蔽裝置用以屏蔽坩鍋21和矽熔體23向矽晶棒20輻射的熱量,通過將導流筒26設置為所述第二部分26b相對於所述第一部分26a向所述導流筒26內側突出,可以將由導流筒26底部的矽熔體23和坩鍋21向矽晶棒20輻射的熱量進一步屏蔽,提高屏蔽效果。導流筒26第二方面作為氬氣導流裝置,在拉晶過程中,對通入拉晶腔室內部的氬氣進行導流,將所述第二部分26b相對於所述第一部分26a向所述導流筒26內側突出設置,有效減小氬氣通過導流筒26流向矽熔體23液面的通道,從而使從爐體2頂部通入的通過導流筒26倒流到矽熔體23液面位置處的氬氣流速增加,矽熔體23液面的剪切力增加,據此,對矽熔體23的流動結構進行進一步調整,使矽熔體23的流動狀態沿著圓周方向更加均勻,這進一步改善了晶體生長的速度均勻性,改善了拉晶品質。On the one hand, the
示例性的,所述第一部分26a與所述第二部分26b的所述纖維材料的繞製方向不同。Exemplarily, the
由於固氈由纖維材料纏繞形成,固氈的熱傳導和熱膨脹性能根據其纖維材料方向呈各向異性。就熱傳導係數而言,沿著纖維材料的延伸方向的熱傳導係數是沿著垂直於纖維材料的延伸方向的法線方向的2-3倍。Since the solid mat is formed by winding the fiber material, the thermal conductivity and thermal expansion properties of the solid mat are anisotropic according to the direction of the fiber material. In terms of thermal conductivity, the thermal conductivity along the extension direction of the fiber material is 2-3 times higher than along the normal direction perpendicular to the extension direction of the fiber material.
在本實施例中,將用以形成隔熱材料的固氈的纖維材料繞製方向設置成靠近垂直於所述內筒162側壁的法線方向,以使所述纖維材料的延伸方向靠近與所述導流筒26的內筒162側壁平行的方向,當熱量從坩鍋21或坩鍋21內的矽熔體23通過導流筒26側壁傳到內側時,由於熱量的傳導方向與纖維材料的延伸方向垂直從而減小了熱傳導的效率,使得隔熱材料163的阻熱效果達到最大。In this embodiment, the winding direction of the fiber material used to form the solid felt of the heat insulating material is set to be close to the normal direction perpendicular to the side wall of the
示例性的,所述第一部分26a設置為圓柱形筒,所述第一部分26a中的所述第一固氈263a的纖維材料的繞製方向沿著靠近垂直於所述外筒上部261a的法線方向。Exemplarily, the
如圖4A所示,導流筒26的第一部分設置為圓柱形筒,其中,圖4A中示出為導流筒26的第一部分26a的截面為矩形。進一步,繼續參看圖4A,形成導流筒26的第一部分26a的第一固氈263a的纖維材料沿著垂直於第一部分26a的內筒162側壁(即內筒上部262a)的法線方向進行繞製,使得纖維材料的延伸方向平行於第一部分26a的內筒162的側壁(即內筒上部262a)。As shown in FIG. 4A , the first part of the
示例性的,所述內筒下部262b包括水平設置的平面或者向下傾斜的斜面,所述第二部分26b中的所述第二固氈263b的纖維材料的繞製方向沿著靠近垂直於所述內筒下部262b的法線方向。Exemplarily, the
如圖4A所示,導流筒26的第二部分26b較第一部分26a向內側突出,同時,內筒下部262b為水平設置的平面,使得導流筒26的第二部分26b設置內徑較第一部分26a小的為圓柱形桶。As shown in FIG. 4A , the
參看圖4B,顯示根據本發明另一個實施例的一種拉晶裝置中的導流筒26的結構示意圖。其中,圖4B中的導流筒26與圖4A結構相似,所不同之處在於,圖4B中導流筒26的第二部分26b較第一部分26a向內側突出,同時,內筒下部262b為在半徑方向上向下傾斜的斜面,使得導流筒26的第二部分26b設置內徑較第一部分26a小的、頂部為在半徑方向上向下傾斜的為圓柱形桶。Referring to FIG. 4B , there is shown a schematic structural diagram of the
參看圖4C,顯示根據本發明另一個實施例的一種拉晶裝置中的導流筒26的結構示意圖。其中,圖4C中的導流筒26與圖4A和圖4B結構相似,所不同之處在於,圖4C中導流筒26的第二部分26b較第一部分26a向內側突出,同時,內筒下部262b為在半徑方向上向下傾斜的斜面,使得導流筒26的第二部分26b設置向下延伸的錐形桶。Referring to FIG. 4C , a schematic structural diagram of a
繼續參看圖4A,形成導流筒26的第二部分26b的第二固氈263b的纖維材料沿著垂直於第二部分26b的內筒162側壁(即內筒下部262b)的法線方向繞製,使得纖維材料的延伸方向平行於第二部分26b的內筒162側壁(即內筒下部262b)。Continuing to refer to FIG. 4A , the fibrous material of the second
由於第一部分的第一固氈263a的纖維材料延伸方向平行於內筒上部262a,當坩鍋21或者矽熔體23的熱量通過導流筒26的第一部分26a向導流筒26的內側傳遞時,熱量沿著垂直於纖維材料的延伸方向傳遞,由於在垂直於纖維材料的延伸方向上熱傳導係數小,使得阻熱效果好。Since the extending direction of the fiber material of the first
同樣,由於第二部分的第二固氈263b的纖維材料延伸方向平行於內筒下部262b,當坩鍋21或者矽熔體23的熱量通過導流筒26的第二部分26b向導流筒26的內側傳遞時,熱量沿著垂直於纖維材料的延伸方向傳遞,由於在垂直於纖維材料的延伸方向上熱傳導係數小,使得阻熱效果好。Likewise, since the extending direction of the fiber material of the second
需要理解的是,上述將第一部分26a的第一固氈263a的纖維材料沿著垂直於第一部分26a的內筒162側壁(即內筒上部262a)的法線方向進行繞製,將第二部分26b的第二固氈263b的纖維材料沿著垂直於第二部分26b的內筒162側壁(即內筒下部262b)的法線方向繞製,僅僅是示例性的,在實際繞製過程中,將第一部分26a和第二部分26b的纖維材料繞製方向設置為不同,並且能夠分別儘量沿著靠近垂直與第一部分26a的內筒162側壁或者第二部分26b的內筒162側壁進行繞製,只要使纖維材料的延伸方向儘量沿著與導流筒26內壁的平面平行的方向,實現在熱量的傳播方向上,沿著垂直於纖維材料的延伸方向,就可以實現本發明降低隔熱材料熱傳導效果,增強隔熱的技術效果。It should be understood that the above-mentioned fiber material of the first
在根據本發明的一個實施例中,所述第一部分26a中的所述第一固氈263a的纖維材料的繞製方向沿著靠近垂直於所述內筒上部262a的法線方向,所述第一部分26a中的所述第一固氈263a的纖維材料的延伸方向與垂直於所述內筒上部262a的側壁的法線的夾角的範圍為75-105°。In an embodiment according to the present invention, the winding direction of the fiber material of the first
在根據本發明的一個實施例中,所述第二部分26b中的所述第二固氈263b的纖維材料的繞製方向沿著靠近垂直於所述內筒下部262b的法線方向,所述第二部分26b中的所述第二固氈263b的纖維材料的延伸方向與垂直於所述內筒下部262b的法線之間的夾角的範圍為75-105°。In an embodiment according to the present invention, the winding direction of the fiber material of the second
在根據一個實施例中,採用如圖2所示的導流筒26,其中導流筒26底部的固氈與導流筒26上部的固氈採用纖維材料沿著同一方向繞製,使得導流筒26內筒162底部的溫度較高,平均溫度達到1050℃,最終使得拉晶工藝的平均拉速為1.0mm/min。In one embodiment, the
而根據本發明的一個實施例中,採用如圖4A所示的導流筒26,其中,導流筒26底部的固氈與導流筒26上部的固氈採用纖維材料沿著不同的方向繞製,其中,導流筒26上部的固氈採用纖維材料沿著垂直於導流筒26側壁的法線方向繞製,從而導流筒26上部的固氈的纖維材料的延伸方向平行於導流筒26側壁,而導流筒26底部的固氈採用纖維材料沿著垂直於導流筒26底部的法線方向繞製,從而導流筒26底部的固氈的纖維材料的延伸方向平行於導流筒26底部,最終實現在拉晶過程中圖4A中導流筒26內筒162底部的溫度較圖2中實施例的導流筒26內筒162底部溫度下降,具體下降到1000℃,使拉晶工藝的平均拉速達到1.2mm/min,拉晶速度提高20%。According to an embodiment of the present invention, the
以上是對根據本發明的一種拉晶裝置的示例性介紹,根據本發明的拉晶裝置,將用以形成隔熱材料的固氈的纖維材料繞製方向設置成靠近垂直於所述內筒側壁的法線方向,以使所述纖維材料的延伸方向靠近與所述導流筒的內筒側壁平行的方向,當熱量從坩鍋或坩鍋內的矽熔體通過導流筒側壁傳到內側時,由於熱量的傳導方向與纖維材料的延伸方向垂直從而減小了熱傳導的效率,使得隔熱材料的阻熱效果達到最大。The above is an exemplary introduction to a crystal pulling device according to the present invention. According to the crystal pulling device of the present invention, the winding direction of the fiber material used to form the solid mat of the insulating material is set close to perpendicular to the side wall of the inner cylinder. so that the extension direction of the fiber material is close to the direction parallel to the side wall of the inner cylinder of the guide cylinder, when the heat is transferred from the crucible or the silicon melt in the crucible to the inside through the side wall of the guide cylinder When the heat conduction direction is perpendicular to the extension direction of the fiber material, the efficiency of heat conduction is reduced, and the heat resistance effect of the thermal insulation material is maximized.
本發明已經通過上述實施例進行了說明,但應當理解的是,上述實施例只是用於舉例和說明的目的,而非意在將本發明限制於所描述的實施例範圍內。此外本領域技術人員可以理解的是,本發明並不侷限於上述實施例,根據本發明的教導還可以做出更多種的變型和修改,這些變型和修改均落在本發明所要求保護的範圍以內。本發明的保護範圍由附屬的請求項及其等效範圍所界定。The present invention has been described by the above-mentioned embodiments, but it should be understood that the above-mentioned embodiments are only for the purpose of illustration and description, and are not intended to limit the present invention to the scope of the described embodiments. In addition, those skilled in the art can understand that the present invention is not limited to the above-mentioned embodiments, and more variations and modifications can also be made according to the teachings of the present invention, and these variations and modifications all fall within the protection claimed in the present invention. within the range. The protection scope of the present invention is defined by the appended claims and their equivalents.
1, 2:爐體
10, 20:晶棒
11, 21:坩鍋
12, 22:加熱器
13, 23:矽熔體
14, 24:提拉裝置
15, 25:驅動裝置
16, 26:導流筒
17, 27:磁場施加裝置
26a:第一部分
26b:第二部分
161:外筒
162:內筒
163:隔熱材料
261a:外筒上部
261b:外筒下部
262a:內筒上部
262b:內筒下部
263a:第一固氈
263b:第二固氈
1, 2:
本發明的下列附圖在此作為本發明的一部分用於理解本發明。附圖中顯示本發明的實施例及其描述,用來解釋本發明的原理。附圖中:The following drawings of the present invention are incorporated herein as a part of the present invention for understanding of the present invention. The accompanying drawings illustrate the embodiments of the invention and their description, which serve to explain the principles of the invention. In the attached picture:
圖1根據一個實施例的一種拉晶裝置的結構示意圖;1 is a schematic structural diagram of a crystal pulling device according to an embodiment;
圖2為根據一個實施例的一種拉晶裝置中導流筒的結構示意圖;2 is a schematic structural diagram of a guide tube in a crystal pulling device according to an embodiment;
圖3根據本發明的一個實施例的一種拉晶裝置的結構示意圖;3 is a schematic structural diagram of a crystal pulling device according to an embodiment of the present invention;
圖4A為根據本發明的一個實施例的拉晶裝置中導流筒的結構示意圖;4A is a schematic structural diagram of a guide tube in a crystal pulling device according to an embodiment of the present invention;
圖4B為根據本發明的另一個實施例的拉晶裝置中導流筒的結構示意圖;4B is a schematic structural diagram of a flow guide tube in a crystal pulling device according to another embodiment of the present invention;
圖4C為根據本發明的另一個實施例的拉晶裝置中導流筒的結構示意圖。FIG. 4C is a schematic structural diagram of a guide tube in a crystal pulling device according to another embodiment of the present invention.
無none
161:外筒 161: outer cylinder
162:內筒 162: inner cylinder
163:隔熱材料 163: Thermal Insulation
Claims (10)
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CN116427012A (en) * | 2023-04-13 | 2023-07-14 | 上海骐杰碳素材料有限公司 | Insulation structure of guide cylinder, processing tool and processing method |
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JP2004107132A (en) * | 2002-09-18 | 2004-04-08 | Sumitomo Mitsubishi Silicon Corp | Heat shielding member for silicon single crystal pulling apparatus |
JP4760729B2 (en) * | 2006-02-21 | 2011-08-31 | 株式会社Sumco | Silicon single crystal wafer for IGBT and manufacturing method of silicon single crystal wafer for IGBT |
CN103204665A (en) * | 2012-01-11 | 2013-07-17 | 周介明 | Fiber and particle hybrid inorganic composite material felt and making method thereof |
CN104328485B (en) * | 2014-11-17 | 2017-01-04 | 天津市环欧半导体材料技术有限公司 | Guide cylinder for improving growth speed of czochralski silicon single crystal |
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