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TW202202441A - Method for producing modifided boron nitride particle, modifided boron nitride particle, composition for forming thermal conductive material, thermal conductive material, thermal conductive sheet, device with thermal conductive layer - Google Patents

Method for producing modifided boron nitride particle, modifided boron nitride particle, composition for forming thermal conductive material, thermal conductive material, thermal conductive sheet, device with thermal conductive layer Download PDF

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TW202202441A
TW202202441A TW110117141A TW110117141A TW202202441A TW 202202441 A TW202202441 A TW 202202441A TW 110117141 A TW110117141 A TW 110117141A TW 110117141 A TW110117141 A TW 110117141A TW 202202441 A TW202202441 A TW 202202441A
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boron nitride
nitride particles
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modified boron
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林大介
人見誠一
新居輝樹
高橋慶太
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日商富士軟片股份有限公司
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    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00Nitrogen; Compounds thereof
    • C01B21/06Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/064Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
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    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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    • H01L23/00Details of semiconductor or other solid state devices
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    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon

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Abstract

The present invention provides a method for producing modified boron nitride particles that can be used for the production of a heat conductive material which has excellent heat conductivity and excellent peel strength. The present invention also provides: modified boron nitride particles; a composition for forming a heat conductive material; a heat conductive material; a heat conductive sheet; and a device with a heat conductive layer. A method for producing modified boron nitride particles according to the present invention comprises a modification step wherein boron nitride particles and an oxidant are brought into contact with each other in an aqueous solution that has a pH of 12 or more, thereby obtaining modified boron nitride particles.

Description

改質氮化硼粒子的製造方法、改質氮化硼粒子、導熱材料形成用組成物、導熱材料、導熱片、附導熱層的元件Method for producing modified boron nitride particles, modified boron nitride particles, composition for forming thermally conductive material, thermally conductive material, thermally conductive sheet, and element with thermally conductive layer

本發明係有關一種改質氮化硼粒子的製造方法、改質氮化硼粒子、導熱材料形成用組成物、導熱材料、導熱片及附導熱層的元件。The present invention relates to a method for producing modified boron nitride particles, modified boron nitride particles, a composition for forming a thermally conductive material, a thermally conductive material, a thermally conductive sheet, and an element with a thermally conductive layer.

近年來,在個人電腦、普通家用電器及汽車等各種各樣之電子設備中所使用之功率半導體元件的小型化發展迅速。伴隨小型化而難以控制從被高密度化之功率半導體元件產生之熱。 為了應對該種問題,可以使用促進從功率半導體元件的散熱之導熱材料。 又,有時為了提高該種導熱材料的導熱率而使用氮化硼粒子。 例如,在專利文獻1中,揭示有在預定的條件下將氮化硼加熱而成之填充劑。In recent years, the miniaturization of power semiconductor elements used in various electronic devices such as personal computers, general household appliances, and automobiles has progressed rapidly. With the miniaturization, it is difficult to control the heat generated from the densified power semiconductor element. In order to deal with such a problem, a thermally conductive material that promotes heat dissipation from the power semiconductor element can be used. In addition, boron nitride particles are sometimes used in order to improve the thermal conductivity of such a thermally conductive material. For example, Patent Document 1 discloses a filler obtained by heating boron nitride under predetermined conditions.

[專利文獻1]日本專利第3468615號公報[Patent Document 1] Japanese Patent No. 3468615

本發明人等對在專利文獻1中所記載之使用了填充劑之導熱材料進行了研究,其結果,了解到導熱性存在改善空間。 又,在使導熱材料與轉移熱量之對象物(黏附材料)接著時,還要求剝離(Peel)強度足夠高。在專利文獻1中所記載之使用了填充劑之導熱材料對於上述剝離強度亦存在改善空間。The inventors of the present invention have studied the thermally conductive material using the filler described in Patent Document 1, and as a result, have found that there is room for improvement in thermal conductivity. In addition, when the thermally conductive material is bonded to an object (adhesive material) that transfers heat, a sufficiently high peel strength is also required. The thermally conductive material using the filler described in Patent Document 1 also has room for improvement in the above-described peel strength.

因此,本發明的課題為提供一種能夠用於製作導熱性及剝離強度優異之導熱材料之改質氮化硼粒子的製造方法。又,本發明的課題亦為提供一種改質氮化硼粒子、導熱材料形成用組成物、導熱材料、導熱片及附導熱層的元件。Therefore, the subject of this invention is to provide the manufacturing method of the modified boron nitride particle which can be used for manufacture of the thermally conductive material excellent in thermal conductivity and peeling strength. Moreover, the subject of this invention is to provide the element with which the modified boron nitride particle, the composition for thermally conductive material formation, the thermally conductive material, the thermally conductive sheet, and the thermally conductive layer are provided.

本發明人等為了解決上述課題而進行了深入研究,其結果,發現了藉由以下結構能夠解決上述課題。The inventors of the present invention have conducted intensive studies in order to solve the above-mentioned problems, and as a result, have found that the above-mentioned problems can be solved by the following structures.

〔1〕 一種改質氮化硼粒子的製造方法,其係包括改質步驟,該改質步驟在pH12以上的水溶液中使氮化硼粒子與氧化劑接觸而獲得改質氮化硼粒子。 〔2〕 如〔1〕所述之改質氮化硼粒子的製造方法,其中,上述水溶液的pH超過13。 〔3〕 如〔1〕或〔2〕所述之改質氮化硼粒子的製造方法,其中,上述氧化劑的標準氧化還原電位為1.50V以上。 〔4〕 如〔1〕至〔3〕之任一項所述之改質氮化硼粒子的製造方法,其中,上述氧化劑為過硫酸鹽。 〔5〕 如〔1〕至〔4〕之任一項所述之改質氮化硼粒子的製造方法,其中,由下述式求出之中值徑的變化率小於10%。 式:中值徑的變化率(%)=〔1-(所製造之改質氮化硼粒子的中值徑)/(改質氮化硼粒子的製造中所使用之氮化硼粒子的中值徑)〕×100 〔6〕 如〔1〕至〔5〕之任一項所述之改質氮化硼粒子的製造方法,其係包括吸附步驟,該吸附步驟在水及有機溶劑中的至少一者的存在下,使在上述改質步驟中所獲得之上述改質氮化硼粒子與表面修飾劑接觸而獲得由上述表面修飾劑修飾之改質氮化硼粒子。 〔7〕 一種改質氮化硼粒子,其中,藉由X射線光電子能譜分析而檢測之表面上之氧原子濃度超過5.0atom%,與水的接觸角為90°以下,並且由下述式(1)求出之D值為0.010以下。 式(1):D值=B(OH)3 (002)/BN(002) B(OH)3 (002):來自於藉由X射線衍射而測量之具有三斜晶系空間群組之氫氧化硼的(002)面之峰值強度 BN(002):來自於藉由X射線衍射而測量之具有六方晶系空間群組之氮化硼的(002)面之峰值強度 〔8〕 如〔7〕所述之改質氮化硼粒子,其中,藉由X射線光電子能譜分析而檢測之表面上之碳原子濃度超過3.0atom%。 〔9〕 如〔8〕所述之改質氮化硼粒子,其中,上述碳原子濃度為6.0atom%以上。 〔10〕 如〔7〕至〔9〕之任一項所述之改質氮化硼粒子,其中,上述D值為0.007以下。 〔11〕 如〔7〕至〔10〕之任一項所述之改質氮化硼粒子,其為凝聚狀的粒子。 〔12〕 如〔11〕所述之改質氮化硼粒子,其中,壓縮破壞強度為5.0MPa以下。 〔13〕 如〔7〕至〔12〕之任一項所述之改質氮化硼粒子,其中,中值徑為10μm以上。 〔14〕 一種導熱材料形成用組成物,其係包含:藉由〔1〕至〔6〕之任一項所述之改質氮化硼粒子的製造方法所獲得之改質氮化硼粒子及作為〔7〕至〔13〕之任一項所述之改質氮化硼粒子中的任一種之改質氮化硼粒子;及 樹脂黏合劑或其前驅物。 〔15〕 如〔14〕所述之導熱材料形成用組成物,其中,上述樹脂黏合劑或其前驅物包含環氧化合物。 〔16〕 如〔14〕或〔15〕所述之導熱材料形成用組成物,其中,上述樹脂黏合劑或其前驅物包含環氧化合物及酚化合物。 〔17〕 如〔14〕至〔16〕之任一項所述之導熱材料形成用組成物,其還包含硬化促進劑。 〔18〕 如〔17〕所述之導熱材料形成用組成物,其中,上述硬化促進劑包括包含磷原子之化合物。 〔19〕 如〔17〕或〔18〕所述之導熱材料形成用組成物,其中,上述硬化促進劑包含鏻鹽。 〔20〕 一種導熱材料,其係使〔14〕至〔19〕之任一項所述之導熱材料形成用組成物硬化而獲得。 〔21〕 一種導熱片,其係由〔20〕所述之導熱材料形成。 〔22〕 一種附導熱層的元件,其係具有元件及配置於上述元件上且包含〔21〕所述之導熱片之導熱層。 [發明效果][1] A method for producing modified boron nitride particles, comprising a reforming step of contacting boron nitride particles with an oxidizing agent in an aqueous solution of pH 12 or higher to obtain modified boron nitride particles. [2] The method for producing modified boron nitride particles according to [1], wherein the pH of the aqueous solution exceeds 13. [3] The method for producing modified boron nitride particles according to [1] or [2], wherein the standard redox potential of the oxidizing agent is 1.50V or more. [4] The method for producing modified boron nitride particles according to any one of [1] to [3], wherein the oxidizing agent is a persulfate. [5] The method for producing modified boron nitride particles according to any one of [1] to [4], wherein the change rate of the median diameter obtained from the following formula is less than 10%. Formula: Change rate of median diameter (%)=[1-(median diameter of modified boron nitride particles produced)/(median of boron nitride particles used in the production of modified boron nitride particles) value diameter)] × 100 [6] The method for producing modified boron nitride particles according to any one of [1] to [5], which comprises an adsorption step in which the adsorption step is carried out in water and an organic solvent. In the presence of at least one, the modified boron nitride particles obtained in the modification step are brought into contact with a surface modifier to obtain modified boron nitride particles modified with the surface modifier. [7] A modified boron nitride particle, wherein the oxygen atomic concentration on the surface detected by X-ray photoelectron spectroscopy exceeds 5.0 atom%, and the contact angle with water is 90° or less, and is represented by the following formula: (1) The obtained D value is 0.010 or less. Formula (1): D value=B(OH) 3 (002)/BN(002) B(OH) 3 (002): derived from hydrogen with triclinic space group measured by X-ray diffraction Peak intensity of (002) plane of boron oxide BN(002): peak intensity from (002) plane of boron nitride with hexagonal space group measured by X-ray diffraction [8] as in [7 ] The modified boron nitride particles, wherein the carbon atom concentration on the surface detected by X-ray photoelectron spectroscopy analysis exceeds 3.0 atom%. [9] The modified boron nitride particles according to [8], wherein the carbon atom concentration is 6.0 atomic % or more. [10] The modified boron nitride particles according to any one of [7] to [9], wherein the D value is 0.007 or less. [11] The modified boron nitride particles according to any one of [7] to [10], which are aggregated particles. [12] The modified boron nitride particles according to [11], wherein the compressive fracture strength is 5.0 MPa or less. [13] The modified boron nitride particles according to any one of [7] to [12], wherein the median diameter is 10 μm or more. [14] A composition for forming a thermally conductive material, comprising: modified boron nitride particles obtained by the method for producing modified boron nitride particles according to any one of [1] to [6], and A modified boron nitride particle that is any one of the modified boron nitride particles described in any one of [7] to [13]; and a resin binder or a precursor thereof. [15] The composition for forming a thermally conductive material according to [14], wherein the resin binder or its precursor contains an epoxy compound. [16] The composition for forming a thermally conductive material according to [14] or [15], wherein the resin binder or its precursor contains an epoxy compound and a phenol compound. [17] The composition for forming a thermally conductive material according to any one of [14] to [16], further comprising a hardening accelerator. [18] The composition for forming a thermally conductive material according to [17], wherein the hardening accelerator includes a compound containing a phosphorus atom. [19] The composition for forming a thermally conductive material according to [17] or [18], wherein the hardening accelerator contains a phosphonium salt. [20] A thermally conductive material obtained by curing the thermally conductive material-forming composition according to any one of [14] to [19]. [21] A thermally conductive sheet formed of the thermally conductive material described in [20]. [22] An element with a thermally conductive layer, comprising an element and a thermally conductive layer disposed on the element and comprising the thermally conductive sheet described in [21]. [Inventive effect]

依據本發明,能夠提供一種能夠用於製作導熱性及剝離強度優異之導熱材料之改質氮化硼粒子的製造方法。又,能夠提供一種改質氮化硼粒子、導熱材料形成用組成物、導熱材料、導熱片及附導熱層的元件。According to the present invention, it is possible to provide a method for producing modified boron nitride particles that can be used to produce a thermally conductive material having excellent thermal conductivity and peel strength. Furthermore, it is possible to provide modified boron nitride particles, a composition for forming a thermally conductive material, a thermally conductive material, a thermally conductive sheet, and an element with a thermally conductive layer.

以下,對本發明的氮化硼粒子及導熱材料形成用組成物進行詳細說明。 以下所記載之構成要件的說明有時基於本發明的代表性實施態樣來進行,但是本發明並不限制於該種實施態樣。 再者,在本說明書中,使用“~”所表示之數值範圍是指將“~”前後所記載之數值作為下限值及上限值而包含之範圍。Hereinafter, the boron nitride particles and the composition for forming a thermally conductive material of the present invention will be described in detail. The description of the constituent requirements described below is sometimes based on a representative embodiment of the present invention, but the present invention is not limited to this embodiment. In addition, in this specification, the numerical range represented using "-" means the range which includes the numerical value described before and after "-" as a lower limit and an upper limit.

在本說明書中,在提及值可以隨著溫度而變化之事項(例如,標準氧化還原電位、pH等)的值之情況下,除非另有說明,則其值表示25℃下之值。例如,在敘述水的容量之情況下,除非另有說明,則其容量表示25℃下之容量。 在本說明書中,“pH”為使用公知的pH計並藉由基於JIS Z8802-1984之方法進行測量之pH。pH的測量溫度設為25℃。 在本說明書中,除非另有說明,則“室溫”為25℃。In this specification, in the case of referring to the value of a matter whose value may vary with temperature (eg, standard redox potential, pH, etc.), unless otherwise specified, the value represents the value at 25°C. For example, in the case of reciting the capacity of water, unless otherwise stated, the capacity means the capacity at 25°C. In this specification, "pH" is pH measured by a method based on JIS Z8802-1984 using a known pH meter. The measurement temperature of pH was set to 25 degreeC. In this specification, unless otherwise stated, "room temperature" is 25°C.

在本說明書中,“(甲基)丙烯醯基”的記載表示“丙烯醯基及甲基丙烯醯基中的任一者或兩者”。又,“(甲基)丙烯醯胺基”的記載表示“丙烯醯胺基及甲基丙烯醯胺基中的任一者或兩者”。In this specification, the description of a "(meth)acryloyl group" means "either or both of an acryl group and a methacryloyl group". In addition, the description of "(meth)acrylamido group" means "either or both of an acrylamino group and a methacrylamido group".

在本說明書中,酸酐基可以為一價的基團,亦可以為二價的基團。再者,在酸酐基表示一價的基團之情況下,可以舉出從順丁烯二酸酐、鄰苯二甲酸酐、焦蜜石酸二酐及1,2,4-苯三甲酸酐等酸酐去除任意的氫原子而獲得之取代基。又,在酸酐基表示二價的基團之情況下,表示*-CO-O-CO-*所表示之基團(*表示鍵結位置)。In this specification, the acid anhydride group may be a monovalent group or a divalent group. In addition, when the acid anhydride group represents a monovalent group, acid anhydrides such as maleic anhydride, phthalic anhydride, pyromic acid dianhydride, and trimellitic anhydride can be exemplified. Substituents obtained by removing arbitrary hydrogen atoms. Moreover, when an acid anhydride group represents a divalent group, it represents a group represented by *-CO-O-CO-* (* represents a bonding position).

再者,在本說明書中,關於未明確記載經取代或未經取代之取代基等,如果可能,則在不損害作為目標之效果之範圍內,該基團還可以具有取代基(例如,後述之取代基群組Y)。例如,在不損害作為目標之效果之範圍內,“烷基”之標註是指經取代或未經取代的烷基(可以具有取代基的烷基)。 又,在本說明書中,在“可以具有取代基”時的取代基的種類、取代基的位置及取代基的數量並無特別限制。作為取代基的數量,例如可以舉出1個或2個以上。作為取代基,例如可以舉出除了氫原子以外之一價的非金屬原子團,選自以下取代基群組Y中之基團為較佳。 在本說明書中,作為鹵素原子,例如可以舉出氯原子、氟原子、溴原子及碘原子。In addition, in this specification, regarding the substituent group which is not clearly described as substituted or unsubstituted, if possible, the group may have a substituent within the range that does not impair the intended effect (for example, described later). the substituent group Y). For example, the notation of "alkyl" refers to a substituted or unsubstituted alkyl group (an alkyl group that may have a substituent) within the scope of not impairing the intended effect. In addition, in this specification, when "it may have a substituent", the kind of a substituent, the position of a substituent, and the number of a substituent are not specifically limited. As the number of substituents, for example, one or two or more can be mentioned. Examples of the substituent include a non-metallic atomic group having a valence other than a hydrogen atom, and a group selected from the following substituent group Y is preferable. In this specification, as a halogen atom, a chlorine atom, a fluorine atom, a bromine atom, and an iodine atom are mentioned, for example.

取代基群組Y: 鹵素原子(-F、-Br、-Cl、-I等)、羥基、胺基、羧酸基及其共軛鹼基、羧酸酐基、氰酸酯基、不飽和聚合性基、環氧基、氧雜環丁基、氮丙啶基、硫醇基、異氰酸酯基、硫代異氰酸酯基、醛基、烷氧基、芳氧基、烷硫基、芳硫基、烷基二硫基、芳基二硫基、N-烷基胺基、N,N-二烷基胺基、N-芳基胺基、N,N-二芳基胺基、N-烷基-N-芳基胺基、醯氧基、胺甲醯氧基、N-烷基胺甲醯氧基、N-芳基胺甲醯氧基、N,N-二烷基胺甲醯氧基、N,N-二芳基胺甲醯氧基、N-烷基-N-芳基胺甲醯氧基、烷基硫氧基、芳基硫氧基、醯硫基、醯胺基、N-烷基醯胺基、N-芳基醯胺基、脲基、N’-烷基脲基、N’,N’-二烷基脲基、N’-芳基脲基、N’,N’-二芳基脲基、N’-烷基-N’-芳基脲基、N-烷基脲基、N-芳基脲基、N’-烷基-N-烷基脲基、N’-烷基-N-芳基脲基、N’,N’-二烷基-N-烷基脲基、N’,N’-二烷基-N-芳基脲基、N’-芳基-N-烷基脲基、N’-芳基-N-芳基脲基、N’,N’-二芳基-N-烷基脲基、N’,N’-二芳基-N-芳基脲基、N’-烷基-N’-芳基-N-烷基脲基、N’-烷基-N’-芳基-N-芳基脲基、烷氧基羰基胺基、芳氧基羰基胺基、N-烷基-N-烷氧基羰基胺基、N-烷基-N-芳氧基羰基胺基、N-芳基-N-烷氧基羰基胺基、N-芳基-N-芳氧基羰基胺基、甲醯基、醯基、烷氧基羰基、芳氧基羰基、胺甲醯基、N-烷基胺甲醯基、N,N-二烷基胺甲醯基、N-芳基胺甲醯基、N,N-二芳基胺甲醯基、N-烷基-N-芳基胺甲醯基、烷基亞磺醯基、芳基亞磺醯基、烷基磺醯基、芳基磺醯基、磺酸基(-SO3 H)及其共軛鹼基、烷氧基磺醯基、芳氧基磺醯基、胺亞磺醯基、N-烷基胺亞磺醯基、N,N-二烷基胺亞磺醯基、N-芳基胺亞磺醯基、N,N-二芳基胺亞磺醯基、N-烷基-N-芳基胺亞磺醯基、胺磺醯基、N-烷基胺磺醯基、N,N-二烷基胺磺醯基、N-芳基胺磺醯基、N,N-二芳基胺磺醯基、N-烷基-N-芳基胺磺醯基、N-醯基胺磺醯基及其共軛鹼基、N-烷基磺醯基胺磺醯基(-SO2 NHSO2 (烷基))及其共軛鹼基、N-芳基磺醯基胺磺醯基(-SO2 NHSO2 (芳基))及其共軛鹼基、N-烷基磺醯基胺甲醯基(-CONHSO2 (烷基))及其共軛鹼基、N-芳基磺醯基胺甲醯基(-CONHSO2 (芳基))及其共軛鹼基、烷氧基甲矽烷基(-Si(烷氧基)3 )、芳氧基甲矽烷基(-Si(芳氧基)3 )、羥基甲矽烷基(-Si(OH)3 )及其共軛鹼基、膦醯基(-PO3 H2 )及其共軛鹼基、二烷基膦醯基(-PO3 (烷基)2 )、二芳基膦醯基(-PO3 (芳基)2 )、烷基芳基膦醯基(-PO3 (烷基)(芳基))、單烷基膦醯基(-PO3 H(烷基))及其共軛鹼基、單芳基膦醯基(-PO3 H(芳基))及其共軛鹼基、膦醯氧基(-OPO3 H2 )及其共軛鹼基、二烷基膦醯氧基(-OPO3 (烷基)2 )、二芳基膦醯氧基(-OPO3 (芳基)2 )、烷基芳基膦醯氧基(-OPO3 (烷基)(芳基))、單烷基膦醯氧基(-OPO3 H(烷基))及其共軛鹼基、單芳基膦醯氧基(-OPO3 H(芳基))及其共軛鹼基、氰基、硝基、芳基、烯基、炔基及烷基。又,如果可能,則上述各基團還可以具有取代基(例如,上述各基團中的1個以上的基團)。例如,還包含可以具有取代基的芳基作為能夠選自取代基群組Y中的基團。 在選自取代基群組Y中之基團具有碳原子之情況下,作為上述基團所具有之碳數,例如為1~20。 作為選自取代基群組Y中之基團所具有之除了氫原子以外的原子的數量,例如為1~30。 又,如果可能,則該等取代基可以取代基彼此鍵結或與經取代之基團鍵結而形成環,亦可以不形成。例如,烷基(或,如烷氧基,包含烷基作為部分結構之基團中之烷基部分)可以為環狀的烷基(環烷基),亦可以為具有1個以上的環狀結構作為部分結構之烷基。Substituent group Y: halogen atom (-F, -Br, -Cl, -I, etc.), hydroxyl, amine group, carboxylic acid group and its conjugated base, carboxylic acid anhydride group, cyanate ester group, unsaturated polymer group, epoxy group, oxetanyl group, aziridine group, thiol group, isocyanate group, thioisocyanate group, aldehyde group, alkoxy group, aryloxy group, alkylthio group, arylthio group, alkane dithio, aryl dithio, N-alkylamine, N,N-dialkylamine, N-arylamine, N,N-diarylamine, N-alkyl- N-Arylamino, Ethyloxy, Aminocarboxy, N-Alkylaminecarboxy, N-Arylaminecarboxy, N,N-Dialkylaminecarboxy, N,N-Diarylamine carboxyloxy, N-alkyl-N-arylamine carboxyloxy, alkylthiooxy, arylthiooxy, thiothio, amide, N- Alkyl amide group, N-aryl amide group, urea group, N'-alkyl urea group, N',N'-dialkyl urea group, N'-aryl urea group, N',N' -Diarylureido, N'-Alkyl-N'-Arylureido, N-Alkylureido, N-Arylureido, N'-Alkyl-N-Alkylureido, N' -Alkyl-N-arylureido, N',N'-dialkyl-N-alkylureido, N',N'-dialkyl-N-arylureido, N'-aryl -N-alkylureido, N'-aryl-N-arylureido, N',N'-diaryl-N-alkylureido, N',N'-diaryl-N- Arylureido, N'-Alkyl-N'-Aryl-N-Alkylureido, N'-Alkyl-N'-Aryl-N-Arylureido, Alkoxycarbonylamine, Aryloxycarbonylamino, N-alkyl-N-alkoxycarbonylamino, N-alkyl-N-aryloxycarbonylamino, N-aryl-N-alkoxycarbonylamino, N -Aryl-N-aryloxycarbonylamino, carboxyl, carboxyl, alkoxycarbonyl, aryloxycarbonyl, carboxyl, N-alkylamine carboxyl, N,N-dioxane Aminocarbamoyl, N-Arylcarbamoyl, N,N-Diarylcarbamoyl, N-Alkyl-N-Arylcarbamoyl, Alkylsulfinyl, Aryl Sulfinyl group, alkylsulfonyl group, arylsulfonyl group, sulfonic acid group (-SO 3 H) and its conjugated base, alkoxysulfonyl group, aryloxysulfonyl group, amine sulfinyl group Sulfonyl, N-alkylaminesulfinyl, N,N-dialkylaminesulfinyl, N-arylaminesulfinyl, N,N-diarylaminesulfinyl, N -Alkyl-N-arylaminesulfinyl, sulfamoyl, N-alkylaminesulfinyl, N,N-dialkylaminesulfinyl, N-arylsulfamoyl, N , N-diaryl sulfamoyl, N-alkyl-N-aryl sulfamoyl, N- aryl sulfamoyl and its conjugated base, N-alkyl sulfamoyl sulfa bases (-SO 2 NHSO 2 (alkyl)) and their conjugated bases, N-arylsulfonamidosulfonamides (-SO 2 NHSO 2 (aryl)) and their conjugated bases, N- Alkylsulfonamidocarboxy (-CONHSO 2 (alkyl)) and its conjugated bases, N-arylsulfonamidocarboxy (-CONHSO 2 (aryl) )) and their conjugated bases, alkoxysilyl (-Si(alkoxy) 3 ), aryloxysilyl (-Si(aryloxy) 3 ), hydroxysilyl (-Si (OH) 3 ) and its conjugated bases, phosphine groups (-PO 3 H 2 ) and its conjugated bases, dialkylphosphoranyl groups (-PO 3 (alkyl) 2 ), diarylphosphines Acyl (-PO 3 (aryl) 2 ), alkylaryl phosphinoyl (-PO 3 (alkyl) (aryl)), monoalkyl phosphino (-PO 3 H (alkyl)) and its conjugated bases, monoaryl phosphinoids (-PO 3 H (aryl)) and their conjugated bases, phosphinoyloxy (-OPO 3 H 2 ) and their conjugated bases, dioxane phosphinodonoxy (-OPO 3 (alkyl) 2 ), diarylphosphinodonyloxy (-OPO 3 (aryl) 2 ), alkylaryl phosphinoyloxy (-OPO 3 (alkyl) (aryl)), monoalkyl phosphinoyloxy (-OPO 3 H(alkyl)) and its conjugated bases, monoaryl phosphinoyloxy (-OPO 3 H(aryl)) and its conjugates Conjugated base, cyano, nitro, aryl, alkenyl, alkynyl and alkyl. In addition, if possible, each of the above-mentioned groups may further have a substituent (for example, one or more of the above-mentioned groups). For example, an aryl group which may have a substituent is also included as a group that can be selected from the substituent group Y. When the group selected from the substituent group Y has a carbon atom, the number of carbon atoms which the above-mentioned group has is, for example, 1 to 20. The number of atoms other than hydrogen atoms contained in the group selected from the substituent group Y is, for example, 1 to 30. Also, if possible, these substituents may or may not be formed by bonding substituents to each other or to a substituted group to form a ring. For example, an alkyl group (or, such as an alkoxy group, an alkyl moiety in a group comprising an alkyl group as a partial structure) may be a cyclic alkyl group (cycloalkyl), or may have one or more cyclic The structure is an alkyl group as part of the structure.

[改質氮化硼粒子的製造方法] 本發明中之改質氮化硼粒子的製造方法(以下,亦稱為“本發明的方法”)包括改質步驟,該改質步驟在pH12以上的水溶液中使氮化硼粒子與氧化劑接觸而獲得改質氮化硼粒子。 藉由採用該種結構而可以解決本發明的課題之機制並不明確,但是本發明人等推測如下。 雖然氮化硼粒子的導熱性優異,但是通常與樹脂黏合劑的密接性不足。因此,在包含通常的氮化硼粒子和樹脂黏合劑之導熱材料中,由於樹脂黏合劑與氮化硼粒子之間的密接性不足而容易產生導熱材料本身的斷裂(凝聚破壞),難以實現所期望的剝離強度。 為了解決該種問題,曾嘗試對氮化硼粒子的表面進行導入官能基等的改質處理,但是氮化硼為穩定的物質,因此難以進行充分的改質。又,與此相反,發現了在為了進行充分的改質而在氧化氣氛下加熱了氮化硼粒子之情況等,在氮化硼粒子的表面上形成有氫氧化硼,該種氫氧化硼反而可能對以氮化硼粒子的導熱性為代表之各種性能造成不利影響。 另一方面,可知在本發明的方法中,在預定的高pH的水溶液中使氮化硼粒子與氧化劑接觸,依據該種方法,能夠防止在被改質之氮化硼粒子中包含氫氧化硼,並且能夠充分改質表面。認為這是因為,若在預定的高pH的水溶液中,則氮化硼的孤電子對難以被質子化,氧化劑可以效率良好地發揮作用。 其結果,認為藉由本發明的方法所製造之改質氮化硼粒子由於在表面上充分導入有官能基,因此與形成導熱材料之樹脂黏合劑的親和性良好,並且不易引起導熱材料的凝聚破壞,從而改善導熱材料的剝離強度。再者,推測上述官能基為羥基。 進而,認為藉由本發明的方法所製造之改質氮化硼粒子由於幾乎不包含氫氧化硼,因此導熱性不會劣化,並且如上所述由於與樹脂黏合劑的親和性良好,因此在導熱材料中的熱的轉移亦能夠變得順暢,從而使用了藉由本發明的方法所製造之改質氮化硼粒子之導熱材料的導熱性亦變得良好。 以下,將使用了改質氮化硼粒子之導熱材料的剝離強度和/或導熱性更加優異之情況亦稱為本發明的效果更加優異。[Method for producing modified boron nitride particles] The method for producing modified boron nitride particles in the present invention (hereinafter, also referred to as "the method of the present invention") includes a reforming step in which boron nitride particles are brought into contact with an oxidizing agent in an aqueous solution having a pH of 12 or higher. Modified boron nitride particles are obtained. The mechanism by which the problem of the present invention can be solved by adopting such a configuration is not clear, but the inventors of the present invention conjecture as follows. Although boron nitride particles are excellent in thermal conductivity, they generally have insufficient adhesiveness with resin binders. Therefore, in a thermally conductive material comprising ordinary boron nitride particles and a resin binder, due to insufficient adhesion between the resin binder and the boron nitride particles, the thermally conductive material itself is prone to fracture (agglomeration failure), and it is difficult to achieve the desired result. desired peel strength. In order to solve such a problem, an attempt has been made to modify the surface of boron nitride particles by introducing functional groups or the like, but boron nitride is a stable substance, so it is difficult to modify sufficiently. On the contrary, it has been found that when the boron nitride particles are heated in an oxidizing atmosphere for sufficient modification, boron hydroxide is formed on the surface of the boron nitride particles, and this boron hydroxide conversely Various properties such as thermal conductivity of boron nitride particles may be adversely affected. On the other hand, according to the method of the present invention, the boron nitride particles are brought into contact with the oxidizing agent in a predetermined high pH aqueous solution, and the boron hydroxide particles can be prevented from being included in the modified boron nitride particles. , and can fully modify the surface. This is considered to be because the lone electron pair of boron nitride is less likely to be protonated in a predetermined high pH aqueous solution, and the oxidizing agent can function efficiently. As a result, it is considered that since the modified boron nitride particles produced by the method of the present invention have sufficient functional groups introduced on the surface, they have good affinity with the resin binder forming the thermally conductive material, and are less likely to cause cohesion failure of the thermally conductive material. , thereby improving the peel strength of thermally conductive materials. In addition, the said functional group is presumed to be a hydroxyl group. Furthermore, since the modified boron nitride particles produced by the method of the present invention hardly contain boron hydroxide, the thermal conductivity is not deteriorated, and since the affinity with the resin binder is good as described above, it is considered that it is suitable for use in thermally conductive materials. The heat transfer in the medium can also be smoothed, and the thermal conductivity of the thermally conductive material using the modified boron nitride particles produced by the method of the present invention can also be improved. Hereinafter, the case where the thermally conductive material using the modified boron nitride particles is more excellent in peel strength and/or thermal conductivity is also referred to as more excellent effects of the present invention.

〔製造方法〕 本發明的製造方法至少包括改質步驟。 本發明的方法還包括吸附步驟亦為較佳。〔Production method〕 The production method of the present invention includes at least a reforming step. It is also preferred that the method of the present invention further comprises an adsorption step.

<改質步驟> 改質步驟為如下步驟:在pH12以上的水溶液中使氮化硼粒子與氧化劑接觸而獲得改質氮化硼粒子。 上述水溶液的pH為12以上是指在包含上述氮化硼和上述氧化劑之狀態下之上述水溶液的pH為12以上。亦即,上述水溶液至少包含水、氮化硼粒子及氧化劑。 上述水溶液的pH為12以上,超過12為較佳,13以上為更佳,超過13為進一步較佳。 上述水溶液的pH的上限並無限制,例如為14。<Modification step> The reforming step is a step of contacting boron nitride particles with an oxidizing agent in an aqueous solution of pH 12 or higher to obtain reformed boron nitride particles. The pH of the above-mentioned aqueous solution is 12 or more means that the pH of the above-mentioned aqueous solution in a state containing the above-mentioned boron nitride and the above-mentioned oxidizing agent is 12 or more. That is, the above-mentioned aqueous solution contains at least water, boron nitride particles, and an oxidizing agent. The pH of the above-mentioned aqueous solution is 12 or more, preferably more than 12, more preferably 13 or more, and even more preferably more than 13. The upper limit of the pH of the above-mentioned aqueous solution is not limited, and is, for example, 14.

在上述水溶液中使氮化硼粒子與氧化劑接觸之時間為0.1~24小時為較佳,0.5~10小時為更佳,1.5~6小時為進一步較佳。 又,使氮化硼粒子與氧化劑接觸時的上述水溶液的溫度為1~95℃為較佳,25~80℃為更佳,45~65℃為進一步較佳。The time for contacting the boron nitride particles with the oxidizing agent in the aqueous solution is preferably 0.1 to 24 hours, more preferably 0.5 to 10 hours, and even more preferably 1.5 to 6 hours. In addition, the temperature of the aqueous solution when the boron nitride particles are brought into contact with the oxidizing agent is preferably 1 to 95°C, more preferably 25 to 80°C, and even more preferably 45 to 65°C.

在上述水溶液中使氮化硼粒子與氧化劑接觸之方法並無限制,例如可以舉出在使用了振動研磨機、珠磨機、球磨機、亨舍爾混合機、噴磨機、星爆流或塗料調節器等粉碎機或破碎機之處理中進行混合而使其接觸之方法、使用三一馬達等機械攪拌器或磁攪拌器等一邊進行攪拌處理一邊使其接觸之方法及一邊用泵使包含氧化劑等之氧化劑水溶液在填充了氮化硼粒子之盒中循環一邊使其接觸之方法。 再者,在上述一邊循環一邊使其接觸之方法之中,即使上述氧化劑水溶液的一部分與上述填充於盒中之氮化硼粒子接觸,並且上述氧化劑水溶液的另一部分存在於泵中等而不與氮化硼粒子接觸,供給至改質步驟中之所有氮化硼粒子及氧化劑水溶液亦整體視為上述水溶液。 其中,在上述水溶液中盡可能不破壞氮化硼粒子或改質氮化硼粒子的方法為較佳。在此所言之破壞例如可以舉出凝聚狀的粒子的凝聚形態被破壞的情況。The method for bringing the boron nitride particles into contact with the oxidizing agent in the above-mentioned aqueous solution is not limited. A method of mixing and contacting during processing in a pulverizer or crusher such as a conditioner, a method of contacting with a mechanical stirrer such as a Sany motor or a magnetic stirrer, etc. while stirring treatment, and a pump containing oxidant A method in which an aqueous solution of an oxidant such as this is circulated in a box filled with boron nitride particles while being brought into contact. Furthermore, in the above-mentioned method of contacting while circulating, even if a part of the above-mentioned oxidant aqueous solution is in contact with the boron nitride particles filled in the above-mentioned box, and the other part of the above-mentioned oxidant aqueous solution exists in a pump or the like without contact with nitrogen. The boron nitride particles are in contact, and all the boron nitride particles and the oxidant aqueous solution supplied to the reforming step are also regarded as the above-mentioned aqueous solution as a whole. Among them, a method in which the boron nitride particles or the modified boron nitride particles are not destroyed as much as possible in the above-mentioned aqueous solution is preferable. The destruction referred to here includes, for example, the case where the aggregated form of the aggregated particles is destroyed.

在上述水溶液中使氮化硼粒子與氧化劑接觸之後,從上述水溶液中提取所獲得之改質氮化硼粒子為較佳。 從上述水溶液提取改質氮化硼粒子之方法並無限制,例如可以舉出將上述水溶液進行過濾而作為過濾物分取改質氮化硼粒子之方法。 用水和/或有機溶劑等清洗所提取之改質氮化硼粒子亦為較佳。After the boron nitride particles are brought into contact with the oxidizing agent in the aqueous solution, the obtained modified boron nitride particles are preferably extracted from the aqueous solution. The method of extracting the modified boron nitride particles from the above-mentioned aqueous solution is not limited, and, for example, a method of filtering the above-mentioned aqueous solution and extracting the modified boron nitride particles as a filtrate is exemplified. It is also preferable to wash the extracted modified boron nitride particles with water and/or an organic solvent.

(氮化硼粒子) 上述水溶液包含氮化硼粒子。 上述氮化硼粒子只要為實質上包括氮化硼(BN)之粒子即可。例如,氮化硼粒子中的氮化硼的含量相對於氮化硼粒子的總質量為90質量%以上為較佳,95質量%以上為更佳,99質量%以上為進一步較佳。上述含量的上限並無特別限制,但是例如為100質量%以下。(Boron Nitride Particles) The above-mentioned aqueous solution contains boron nitride particles. The boron nitride particles described above may be particles substantially including boron nitride (BN). For example, the content of boron nitride in the boron nitride particles is preferably 90% by mass or more, more preferably 95% by mass or more, and even more preferably 99% by mass or more, based on the total mass of the boron nitride particles. The upper limit of the content is not particularly limited, but is, for example, 100% by mass or less.

上述氮化硼粒子的結晶結構並無限制,例如能夠使用六方晶氮化硼或立方晶氮化硼。又,上述氮化硼粒子例如可以為氮化硼奈米片或氮化硼奈米管。上述氮化硼粒子的形狀並無特別限制,亦可以為鱗片狀、平板狀、米粒狀、球形狀、立方體狀、紡錘形狀及不規則形狀中的任一種。又,氮化硼粒子可以為該等形狀的微粒凝聚而形成之凝聚狀的粒子(二次粒子)。 整體上,凝聚狀的粒子例如可以為球形,亦可以為不規則形狀。 其中,從提高與樹脂複合時的導熱率的觀點考慮,上述氮化硼粒子為凝聚狀的粒子為較佳。The crystal structure of the boron nitride particles is not limited, and for example, hexagonal boron nitride or cubic boron nitride can be used. In addition, the boron nitride particles may be, for example, boron nitride nanosheets or boron nitride nanotubes. The shape of the boron nitride particles is not particularly limited, and may be any of a scale shape, a flat shape, a rice grain shape, a spherical shape, a cubic shape, a spindle shape, and an irregular shape. In addition, the boron nitride particles may be aggregated particles (secondary particles) formed by aggregating fine particles of these shapes. As a whole, the aggregated particles may be spherical or irregular, for example. Among them, from the viewpoint of improving the thermal conductivity at the time of compounding with the resin, the boron nitride particles are preferably aggregated particles.

上述氮化硼粒子的大小(在氮化硼粒子為二次粒子之情況下,作為二次粒子的大小)並無特別限制。其中,在上述氮化硼粒子的分散性更加優異之觀點而言,氮化硼粒子的中值徑為100μm以下為較佳,80μm以下為更佳,60μm以下為進一步較佳。上述中值徑的下限並無特別限制,但是在處理性和/或導熱性的觀點而言,500nm以上為較佳,10μm以上為更佳,15μm以上為進一步較佳。 在本說明書中,粒子(上述氮化硼粒子或改質氮化硼粒子等)的中值徑例如為能夠使用Malvern Panalytical Ltd製的Master sizer2000進行測量之中值徑。The size of the boron nitride particles (when the boron nitride particles are secondary particles, the size of the secondary particles) is not particularly limited. Among them, from the viewpoint of more excellent dispersibility of the boron nitride particles, the median diameter of the boron nitride particles is preferably 100 μm or less, more preferably 80 μm or less, and even more preferably 60 μm or less. The lower limit of the median diameter is not particularly limited, but from the viewpoint of handleability and/or thermal conductivity, 500 nm or more is preferable, 10 μm or more is more preferable, and 15 μm or more is further more preferable. In this specification, the median diameter of particles (the above-mentioned boron nitride particles, modified boron nitride particles, etc.) is, for example, a median diameter that can be measured using Master sizer 2000 manufactured by Malvern Panalytical Ltd.

上述氮化硼粒子(尤其為凝聚狀的粒子之上述氮化硼粒子)的壓縮破壞強度為10.0MPa以下為較佳,5.0MPa以下為更佳,4.0MPa以下為進一步較佳。又,上述壓縮破壞強度的下限並無限制,例如上述壓縮破壞強度為0.5MPa以上為較佳,1.0MPa以上為更佳,1.5MPa以上為進一步較佳。 在本說明書中,關於粒子的壓縮破壞強度,藉由使用Shimadzu Corporation製的微小壓縮試驗機MCT-510進行壓縮試驗,並將粒子作為試樣進行壓縮破壞強度的測量來求出。 壓縮試驗能夠如下實施:示出在用壓頭向試樣施加負載時試樣破壞時的試驗力(mN)-位移(μm)的圖,將位移成為恆定之試驗力(mN)設為破壞點P,並由以下式計算出破壞強度(MPa)。 壓縮破壞強度(MPa)=(2.48P)/(3.14d2 ) d:粒徑 測量條件設為如下:壓頭=FLAT120、試驗力=20(mN)、負載速度=0.4462(mN/sec)、負載保持時間=5(sec)。 選出10個任意的粒子(較佳為凝聚狀的粒子),測量壓縮破壞強度並求出其平均值,將其設為粒子整體的壓縮破壞強度。 再者,關於上述粒徑(d),從SEM觀察圖像測量粒子(較佳為凝聚狀的粒子)的長軸的長度來求出。The compressive fracture strength of the boron nitride particles (especially the boron nitride particles that are aggregated particles) is preferably 10.0 MPa or less, more preferably 5.0 MPa or less, and even more preferably 4.0 MPa or less. In addition, the lower limit of the compressive rupture strength is not limited. For example, the compressive rupture strength is preferably 0.5 MPa or more, more preferably 1.0 MPa or more, and even more preferably 1.5 MPa or more. In this specification, the compressive rupture strength of particles is determined by performing a compression test using a micro-compression tester MCT-510 manufactured by Shimadzu Corporation, and measuring the compressive rupture strength of particles as a sample. The compression test can be carried out as follows: a graph showing the test force (mN)-displacement (μm) at the time of failure of the sample when a load is applied to the sample with an indenter, and the test force (mN) at which the displacement becomes constant is set as the failure point P, and the breaking strength (MPa) was calculated from the following formula. Compressive breaking strength (MPa)=(2.48P)/(3.14d 2 ) d: The particle size measurement conditions are set as follows: indenter=FLAT120, test force=20(mN), load speed=0.4462(mN/sec), Load hold time = 5 (sec). Ten arbitrary particles (preferably aggregated particles) are selected, the compressive fracture strength is measured, the average value thereof is obtained, and this is set as the compressive fracture strength of the entire particle. In addition, the said particle diameter (d) is calculated|required by measuring the length of the long axis of a particle (preferably agglomerated particle) from a SEM observation image.

在上述水溶液中,氮化硼粒子的含量並無限制,例如相對於上述水溶液中之水100質量份為0.1~100質量份為較佳,1~30質量份為更佳,3~20質量份為進一步較佳。 氮化硼粒子可以單獨使用一種,亦可以使用兩種以上。In the above aqueous solution, the content of boron nitride particles is not limited. For example, relative to 100 parts by mass of water in the above aqueous solution, it is preferably 0.1 to 100 parts by mass, more preferably 1 to 30 parts by mass, and 3 to 20 parts by mass. for further better. One type of boron nitride particles may be used alone, or two or more types may be used.

(水) 上述水溶液包含水。 在上述水溶液中,水的含量相對於上述水溶液的總質量為20~99質量%為較佳,50~95質量%為更佳,65~90質量%為進一步較佳。(water) The above-mentioned aqueous solution contains water. In the above aqueous solution, the content of water is preferably 20 to 99% by mass, more preferably 50 to 95% by mass, and even more preferably 65 to 90% by mass relative to the total mass of the above aqueous solution.

(氧化劑) 上述水溶液包含氧化劑。 氧化劑並無限制,例如可以舉出如過硫酸鈉、過硫酸鉀及過硫酸銨的過硫酸鹽;如硝酸鈰銨、硝酸鈉及硝酸銨的硝酸鹽;如過氧化氫及第三丁基過氧化氫的過氧化物;如過錳酸鉀、二氧化錳的錳化合物;如鉻酸鉀、二鉻酸鉀的鉻化合物;如過碘酸鉀及過碘酸鈉的超原子價碘化合物;如苯醌、萘醌、蒽醌及氯醌的醌化合物;如N-甲基嗎福林N-氧化物的胺氧化物化合物、如次氯酸鈉及亞氯酸鈉的鹵素含氧酸的鹽以及包括過氧-硫酸鉀/硫酸氫鉀/硫酸鉀之複鹽(DuPont de Nemours,Inc.製OXONE)。 其中,氧化劑包含過硫酸鹽為較佳,過硫酸鹽為更佳。 又,為了輔助氧化劑的作用,可以與氧化劑分開使用觸媒。作為上述觸媒,例如可以舉出二價的鐵化合物(FeSO4 等)及三價的鐵化合物。 再者,氧化劑和/或觸媒亦可以為水合物。(Oxidant) The above-mentioned aqueous solution contains an oxidant. The oxidizing agent is not limited, for example, persulfate such as sodium persulfate, potassium persulfate and ammonium persulfate; nitrate such as cerium ammonium nitrate, sodium nitrate and ammonium nitrate; such as hydrogen peroxide and tertiary butyl peroxide Peroxides of hydrogen oxide; manganese compounds such as potassium permanganate and manganese dioxide; chromium compounds such as potassium chromate and potassium dichromate; superatomic iodine compounds such as potassium periodate and sodium periodate; Quinone compounds such as benzoquinone, naphthoquinone, anthraquinone, and chloranil; amine oxide compounds such as N-methylmorpholin N-oxide, salts of halogen oxyacids such as sodium hypochlorite and sodium chlorite, and salts including Double salt of potassium peroxy-sulfate/potassium hydrogen sulfate/potassium sulfate (OXONE by DuPont de Nemours, Inc.). Among them, it is preferable that the oxidizing agent contains persulfate, and it is more preferable that persulfate. Also, in order to assist the action of the oxidizing agent, a catalyst may be used separately from the oxidizing agent. As said catalyst, a divalent iron compound ( FeSO4 etc.) and a trivalent iron compound are mentioned, for example. Furthermore, the oxidizing agent and/or the catalyst may also be a hydrate.

又,氧化劑的標準氧化還原電位為0.30V以上為較佳,1.50V以上為更佳,1.70以上為進一步較佳。氧化劑的標準氧化還原電位的上限並無限制,例如4.00V以下為較佳,2.50V以下為更佳。 上述標準氧化還原電位以標準氫電極為基準。Further, the standard redox potential of the oxidizing agent is preferably 0.30 V or more, more preferably 1.50 V or more, and even more preferably 1.70 or more. The upper limit of the standard redox potential of the oxidizing agent is not limited, for example, it is preferably 4.00V or less, and more preferably 2.50V or less. The above standard redox potential is based on a standard hydrogen electrode.

在上述水溶液中,氧化劑的含量相對於上述水溶液中之水100質量份為0.05~20質量份為較佳,0.1~20質量份為更佳,1~20質量份為進一步較佳。 氧化劑可以單獨使用一種,亦可以使用兩種以上。 在上述水溶液包含觸媒之情況下,其氧化劑的含量相對於上述水溶液中之水100質量份為0.005~2質量份為較佳,0.01~2質量份為更佳,0.1~2質量份為進一步較佳。 觸媒可以單獨使用一種,亦可以使用兩種以上。In the above aqueous solution, the content of the oxidizing agent is preferably 0.05 to 20 parts by mass, more preferably 0.1 to 20 parts by mass, and even more preferably 1 to 20 parts by mass relative to 100 parts by mass of water in the above aqueous solution. An oxidizing agent may be used individually by 1 type, and may use 2 or more types. When the above aqueous solution contains a catalyst, the content of the oxidizing agent is preferably 0.005 to 2 parts by mass, more preferably 0.01 to 2 parts by mass, and more preferably 0.1 to 2 parts by mass relative to 100 parts by mass of water in the above aqueous solution better. A catalyst may be used individually by 1 type, and may use 2 or more types.

(鹼源) 為了調整上述水溶液的pH,上述水溶液除了上述成分以外還包含鹼源亦為較佳。 作為上述鹼源,例如可以舉出如鹼金屬氫氧化物(氫氧化鈉等)及鹼土類金屬氫氧化物的無機鹽基;以及有機鹽基。 在上述水溶液中,只要適當調整鹼源的含量以能夠將上述水溶液的pH調整成所期望的溫度即可,例如相對於上述水溶液中之水100質量份為0.1~10質量份。(Alkali source) In order to adjust the pH of the said aqueous solution, it is also preferable that the said aqueous solution contains an alkali source in addition to the said component. Examples of the above-mentioned alkali source include inorganic salt groups of alkali metal hydroxides (sodium hydroxide, etc.) and alkaline earth metal hydroxides; and organic salt groups. In the aqueous solution, the content of the alkali source may be appropriately adjusted so that the pH of the aqueous solution can be adjusted to a desired temperature, for example, 0.1 to 10 parts by mass relative to 100 parts by mass of water in the aqueous solution.

<吸附步驟> 吸附步驟為如下步驟:在水及有機溶劑中的至少一者的存在下,使在上述改質步驟中所獲得之上述改質氮化硼粒子與表面修飾劑接觸而獲得由表面修飾劑修飾之改質氮化硼粒子。 在此是指由表面修飾劑修飾之改質氮化硼粒子,尤其亦稱為表面修飾氮化硼粒子。 再者,表面修飾氮化硼粒子是指吸附表面修飾劑以進行表面修飾之狀態的改質氮化硼粒子,表面修飾氮化硼粒子亦包含於改質氮化硼粒子中。 又,是指未進行表面修飾的改質氮化硼粒子及表面修飾氮化硼粒子中之除了表面修飾劑以外的部分,亦稱為氧化氮化硼粒子。 亦即,表面修飾氮化硼粒子為包含氧化氮化硼粒子和吸附於氧化氮化硼粒子的表面上之表面修飾劑之材料。<Adsorption step> The adsorption step is the following step: in the presence of at least one of water and an organic solvent, the above-mentioned modified boron nitride particles obtained in the above-mentioned modification step are brought into contact with a surface modifier to obtain a modified boron nitride particle modified by the surface modifier. Modified boron nitride particles. Here, it refers to modified boron nitride particles modified with a surface modifier, especially also referred to as surface modified boron nitride particles. Furthermore, the surface-modified boron nitride particles refer to modified boron nitride particles in a state of adsorbing a surface modifier to perform surface modification, and the surface-modified boron nitride particles are also included in the modified boron nitride particles. In addition, it refers to the part other than the surface modifier among the modified boron nitride particles and the surface-modified boron nitride particles that have not been surface-modified, and is also referred to as a boron nitride oxide particle. That is, the surface-modified boron nitride particles are materials including boron nitride oxide particles and a surface modifier adsorbed on the surfaces of the boron nitride oxide particles.

吸附步驟在混合液中實施,該混合液包含上述水及有機溶劑中的至少一者、在上述改質步驟中所獲得之上述改質氮化硼粒子及上述表面修飾劑。 在上述混合液中使在上述改質步驟中所獲得之改質氮化硼粒子(氧化氮化硼粒子等)與表面修飾劑接觸之時間為0.1~24小時為較佳,0.5~10小時為更佳,1.5~6小時為進一步較佳。 又,使在上述改質步驟中所獲得之改質氮化硼粒子(氧化氮化硼粒子等)與表面修飾劑接觸時的上述混合液的溫度還取決於表面修飾劑的種類,但是例如1~200℃為較佳,10~160℃為更佳,15~140℃為進一步較佳。The adsorption step is carried out in a mixed solution containing at least one of the water and the organic solvent, the modified boron nitride particles obtained in the modification step, and the surface modifier. In the above mixed solution, the modified boron nitride particles (boron oxide nitride particles, etc.) obtained in the above modification step are brought into contact with the surface modifier for a period of preferably 0.1 to 24 hours, preferably 0.5 to 10 hours. More preferably, 1.5-6 hours is more preferable. In addition, the temperature of the above-mentioned mixed solution when the modified boron nitride particles (boron oxide nitride particles, etc.) obtained in the above-mentioned modification step is brought into contact with the surface modifier also depends on the type of the surface modifier, but for example, 1 ∼200°C is preferable, 10∼160°C is more preferable, and 15∼140°C is further preferable.

在上述混合液中使在上述改質步驟中所獲得之改質氮化硼粒子(氧化氮化硼粒子等)與表面修飾劑接觸之方法並無限制,例如可以舉出使用三一馬達等機械攪拌器或磁攪拌器等一邊進行攪拌處理一邊使其接觸之方法及一邊用泵等使表面修飾劑的溶液在填充了改質氮化硼粒子之盒中循環一邊使其接觸之方法。再者,在上述一邊循環一邊使其接觸之方法之中,即使上述表面修飾劑的溶液的一部分與上述填充於盒中之改質氮化硼粒子接觸,並且上述表面修飾劑的溶液的另一部分存在於泵中等而不與改質氮化硼粒子接觸,亦將供給至吸附步驟中之所有改質氮化硼粒子及上述表面修飾劑的溶液整體視為上述混合液。 其中,在上述混合液中盡可能不破壞改質氮化硼粒子的方法為較佳。The method of contacting the modified boron nitride particles (boron oxide nitride particles, etc.) obtained in the above modification step with the surface modifier in the above-mentioned mixed solution is not limited. For example, the use of a machine such as a Sany motor can be used A method of contacting with a stirrer or a magnetic stirrer while performing stirring treatment, and a method of contacting with a pump or the like while circulating a solution of a surface modifier in a box filled with modified boron nitride particles. Furthermore, in the above-mentioned method of contacting while circulating, even if a part of the solution of the surface modifier is brought into contact with the modified boron nitride particles filled in the cell, the other part of the solution of the surface modifier is in contact with each other. The solution of all the modified boron nitride particles and the above-mentioned surface modifier supplied to the adsorption step is also regarded as the above-mentioned mixed liquid as a whole, which exists in the pump and the like and does not come into contact with the modified boron nitride particles. Among them, a method in which the modified boron nitride particles are not destroyed as much as possible in the above-mentioned mixed solution is preferable.

可以在上述混合液中使在上述改質步驟中所獲得之改質氮化硼粒子(氧化氮化硼粒子等)與表面修飾劑接觸之後,從上述混合液中提取所獲得之表面修飾氮化硼粒子。 從上述混合液提取表面修飾氮化硼粒子之方法並無限制,例如可以舉出將上述混合液進行過濾而作為過濾物分取表面修飾氮化硼粒子之方法。 用水和/或有機溶劑等清洗所提取之表面修飾氮化硼粒子亦為較佳。 使用烘箱等對清洗後之表面修飾氮化硼粒子進行乾燥處理亦為較佳。 再者,可以向上述混合液添加構成如後述的導熱材料形成用組成物之除了改質氮化硼粒子以外的固體成分(後述環氧化合物等),例如亦可以製造導熱材料形成用組成物的同時,在其中製作表面修飾氮化硼粒子。The modified boron nitride particles (boron oxide nitride particles, etc.) obtained in the above modification step can be brought into contact with a surface modifier in the above mixed solution, and then the obtained surface modified nitride can be extracted from the above mixed solution. boron particles. The method of extracting the surface-modified boron nitride particles from the above-mentioned mixed solution is not limited, and for example, a method of filtering the above-mentioned mixed solution to separate the surface-modified boron nitride particles as a filtrate is exemplified. It is also preferable to wash the extracted surface-modified boron nitride particles with water and/or organic solvents. It is also preferable to use an oven or the like to dry the surface-modified boron nitride particles after cleaning. In addition, solid components other than modified boron nitride particles (epoxy compounds, etc., described later) that constitute the composition for forming a thermally conductive material as described later may be added to the above-mentioned mixed solution, for example, a composition for forming a thermally conductive material may be produced. At the same time, surface-modified boron nitride particles were produced therein.

(有機溶劑) 作為在吸附步驟中所使用之有機溶劑,例如可以舉出甲醇、乙醇、2-丙醇、乙腈、環戊酮、環己酮、乙酸乙酯、甲基乙基酮、二氯甲烷及四氫呋喃等。 在吸附步驟中使用有機溶劑之情況下,上述有機溶劑的含量相對於使在上述改質步驟中所獲得之改質氮化硼粒子(氧化氮化硼粒子等)與表面修飾劑接觸時的上述混合液的總質量為5~99質量%為較佳,20~90質量%為更佳,30~80質量%為進一步較佳。 有機溶劑可以單獨使用一種,亦可以使用兩種以上。(Organic solvents) Examples of the organic solvent used in the adsorption step include methanol, ethanol, 2-propanol, acetonitrile, cyclopentanone, cyclohexanone, ethyl acetate, methyl ethyl ketone, dichloromethane, and tetrahydrofuran. . When an organic solvent is used in the adsorption step, the content of the organic solvent is relative to the above-mentioned content of the above-mentioned modified boron nitride particles (boron oxide nitride particles, etc.) obtained in the above-mentioned modification step when the surface modifier is brought into contact with each other. The total mass of the mixed solution is preferably 5 to 99 mass %, more preferably 20 to 90 mass %, and even more preferably 30 to 80 mass %. An organic solvent may be used individually by 1 type, and may use 2 or more types.

(水) 在吸附步驟中使用水之情況下,水的含量相對於使在上述改質步驟中所獲得之改質氮化硼粒子(氧化氮化硼粒子等)與表面修飾劑接觸時的上述混合液的總質量為5~99質量%為較佳,20~90質量%為更佳,30~80質量%為進一步較佳。(water) In the case where water is used in the adsorption step, the content of water relative to the above-mentioned mixed solution when the modified boron nitride particles (boron oxide nitride particles, etc.) obtained in the above-mentioned modification step is brought into contact with the surface modifier The total mass is preferably 5 to 99 mass %, more preferably 20 to 90 mass %, and even more preferably 30 to 80 mass %.

水與有機溶劑的合計含量相對於使在上述改質步驟中所獲得之改質氮化硼粒子(氧化氮化硼粒子等)與表面修飾劑接觸時的上述混合液的總質量為5~99質量%為較佳,20~90質量%為更佳,30~80質量%為進一步較佳。The total content of the water and the organic solvent is 5 to 99% of the total mass of the liquid mixture when the modified boron nitride particles (boron oxide nitride particles, etc.) obtained in the above modification step are brought into contact with the surface modifier. The mass % is preferable, 20 to 90 mass % is more preferable, and 30 to 80 mass % is further preferable.

(在改質步驟中所獲得之改質氮化硼粒子) 在吸附步驟中,使用在上述改質步驟中所獲得之改質氮化硼粒子。 在上述改質步驟中所獲得之改質氮化硼粒子通常為氧化氮化硼粒子。 例如,在上述改質步驟中所獲得之改質氮化硼粒子的使用量相對於上述有機溶劑的100質量份為1~100質量份為較佳,10~80質量份為更佳,30~70質量份為進一步較佳。(modified boron nitride particles obtained in the modification step) In the adsorption step, the modified boron nitride particles obtained in the above modification step are used. The modified boron nitride particles obtained in the above modification step are usually boron nitride oxide particles. For example, the use amount of the modified boron nitride particles obtained in the above modification step is preferably 1 to 100 parts by mass, more preferably 10 to 80 parts by mass, and 30 to 100 parts by mass of the organic solvent. 70 parts by mass is more preferable.

(表面修飾劑) 在吸附步驟中,使用表面修飾劑。 表面修飾劑為能夠對無機成分(尤其氧化氮化硼粒子)進行表面修飾之化合物。 再者,在本說明書中,“表面修飾”是指有機物吸附在無機成分(氧化氮化硼粒子等)的表面中的至少一部分上之狀態。吸附的形態並無特別限定,只要為鍵結狀態即可。亦即,表面修飾亦包含有機物的一部分脫離而獲得之有機基鍵結在無機成分(氧化氮化硼粒子等)的表面上之狀態。鍵結可以為共價鍵、配位鍵、離子鍵、氫鍵、範德華鍵(van der Waals bond)及金屬鍵等中的任一鍵。表面修飾可以在表面上的至少一部分上形成單分子膜。單分子膜為藉由有機分子的化學吸附所形成之單層膜,以Self-AssembledMonoLayer(自組裝單分子層)(SAM)而聞名。再者,在本說明書中,表面修飾可以僅為無機物(氧化氮化硼粒子等)的表面上的一部分,亦可以為整體。(surface modifier) In the adsorption step, surface modifiers are used. Surface modifiers are compounds capable of surface modification of inorganic components (especially boron oxide nitride particles). In addition, in this specification, "surface modification" means the state which an organic substance adsorb|sucks on at least a part of the surface of an inorganic component (boron oxide nitride particle etc.). The form of adsorption is not particularly limited, as long as it is in a bonded state. That is, the surface modification also includes a state in which an organic group obtained by detachment of a part of an organic substance is bonded to the surface of an inorganic component (boron oxide nitride particles, etc.). The bond may be any one of a covalent bond, a coordinate bond, an ionic bond, a hydrogen bond, a van der Waals bond, a metal bond, and the like. The surface modification can form a monolayer on at least a portion of the surface. Monolayers are monolayers formed by chemical adsorption of organic molecules, known as Self-Assembled MonoLayer (SAM). In addition, in this specification, the surface modification may be only a part on the surface of an inorganic substance (a boron nitride oxide particle etc.), and may be the whole.

作為表面修飾劑,例如能夠使用金屬偶合劑、樹脂、長鏈烷基脂肪酸等羧酸及有機膦酸、有機磷酸酯等先前公知的表面修飾劑。另外,例如可以使用日本特開2009-502529號公報、日本特開2001-192500號公報、日本專利4694929號、國際公開第2018/004660號的[0021]~[0093]段、國際公開第2019/013325號的[0020]~[0065]段、國際公開第2019/013261號的[0020]~[0067]段及國際公開第2019/013323號的[0020]~[0087]段中所記載的表面修飾劑。As the surface modifier, for example, metal coupling agents, resins, carboxylic acids such as long-chain alkyl fatty acids, and previously known surface modifiers such as organic phosphonic acids and organic phosphoric acid esters can be used. In addition, for example, Japanese Patent Laid-Open No. 2009-502529, Japanese Patent Laid-Open No. 2001-192500, Japanese Patent No. 4694929, Paragraphs [0021] to [0093] of International Publication No. 2018/004660, and International Publication No. 2019/ Surfaces described in paragraphs [0020] to [0065] of No. 013325, paragraphs [0020] to [0067] of International Publication No. 2019/013261, and paragraphs [0020] to [0087] of International Publication No. 2019/013323 modifier.

・金屬偶合劑 表面修飾劑為金屬偶合劑為較佳。 金屬偶合劑為具有與金屬原子直接鍵結之水解性基之化合物。 作為上述金屬原子,例如可以舉出Si、Ti、Zr及Al等。 作為上述水解性基,可以舉出烷氧基(較佳為碳數1~10)及氯原子等鹵素原子。 金屬偶合劑所具有之與金屬原子直接鍵結之水解性基的數量為1個以上為較佳,2個以上為更佳,3個以上為更進一步較佳。上述數量沒有上限,例如為10000個。・Metal coupling agent Preferably, the surface modifier is a metal coupling agent. The metal coupling agent is a compound having a hydrolyzable group directly bonded to a metal atom. As said metal atom, Si, Ti, Zr, Al, etc. are mentioned, for example. Examples of the hydrolyzable group include an alkoxy group (preferably having 1 to 10 carbon atoms) and a halogen atom such as a chlorine atom. The number of the hydrolyzable groups directly bonded to the metal atom in the metal coupling agent is preferably one or more, more preferably two or more, and still more preferably three or more. There is no upper limit to the above-mentioned number, for example, 10,000.

金屬偶合劑具有反應性基亦為較佳。 上述反應性基例如為能夠與如後述的樹脂黏合劑或其前驅物交聯的基團為較佳。 作為上述反應性基的具體例,可以舉出環氧基、氧雜環丁基、乙烯基、(甲基)丙烯基、苯乙烯基、胺基、異氰酸酯基、巰基及酸酐基。 金屬偶合劑所具有之反應性基的數量為1個以上為較佳,2個以上為更佳,3個以上為更進一步較佳。上述數量沒有上限,例如為10000個。It is also preferable that the metal coupling agent has a reactive group. It is preferable that the said reactive group is a group which can be crosslinked with the resin binder or its precursor as mentioned later, for example. Specific examples of the above reactive groups include epoxy groups, oxetanyl groups, vinyl groups, (meth)acryl groups, styryl groups, amine groups, isocyanate groups, mercapto groups, and acid anhydride groups. The number of reactive groups possessed by the metal coupling agent is preferably one or more, more preferably two or more, and still more preferably three or more. There is no upper limit to the above-mentioned number, for example, 10,000.

作為金屬偶合劑,例如可以舉出矽烷偶合劑、鈦偶合劑、二氧化鋯偶合劑、鋁偶合劑及鋁酸鋯偶合劑。 其中,金屬偶合劑為矽烷偶合劑為較佳。As a metal coupling agent, a silane coupling agent, a titanium coupling agent, a zirconium dioxide coupling agent, an aluminum coupling agent, and a zirconium aluminate coupling agent are mentioned, for example. Among them, the metal coupling agent is preferably a silane coupling agent.

作為矽烷偶合劑,例如可以舉出如γ-胺基丙基三乙氧基矽烷、N-β-(胺乙基)-γ-胺基丙基三甲氧基矽烷及三甲氧基[3-(苯基胺基)丙基]矽烷的胺基矽烷系矽烷偶合劑;如3-環氧丙氧基丙基三甲氧基矽烷及β-(3,4-環氧環己酯)乙基三甲氧基矽烷的環氧矽烷系矽烷偶合劑;如三乙氧基乙烯基矽烷及乙烯基-三(β-甲氧基乙氧基)矽烷的乙烯基矽烷系矽烷偶合劑;如N-β-(N-乙烯基苄基胺乙基)-γ-胺基丙基三甲氧基矽烷鹽酸鹽的陽離子矽烷系矽烷偶合劑;如苯基三甲氧基矽烷及苯基三乙氧基矽烷的苯基矽烷系矽烷偶合劑;如3-甲基丙烯醯氧基丙基三甲氧基矽烷的甲基丙烯矽烷系矽烷偶合劑;如3-丙烯醯氧基丙基三甲氧基矽烷的丙烯酸矽烷系矽烷偶合劑;如3-異氰酸酯丙基三乙氧基矽烷的異氰酸酯矽烷系矽烷偶合劑;如三-(三甲氧基甲矽烷基丙基)異氰脲酸酯的異氰脲酸酯矽烷系矽烷偶合劑;如3-巰基丙基甲基二甲氧基矽烷及3-巰基丙基三甲氧基矽烷的巰基矽烷系矽烷偶合劑;如3-脲丙基三烷氧基矽烷的脲矽烷系矽烷偶合劑;以及如對苯乙烯基三甲氧基矽烷的苯乙烯矽烷系矽烷偶合劑。Examples of the silane coupling agent include γ-aminopropyltriethoxysilane, N-β-(aminoethyl)-γ-aminopropyltrimethoxysilane, and trimethoxy[3-( Phenylamino)propyl]silane aminosilane-based silane coupling agent; such as 3-glycidoxypropyltrimethoxysilane and β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane Epoxysilane-based silane coupling agents for silanes; such as vinylsilane coupling agents for triethoxyvinylsilane and vinyl-tris(β-methoxyethoxy)silane; such as N-β-( Cationic silane-based silane coupling agent of N-vinylbenzylaminoethyl)-γ-aminopropyltrimethoxysilane hydrochloride; such as phenyltrimethoxysilane and phenyl triethoxysilane Silane-based silane coupling agent; methacrylosilane-based silane coupling agent such as 3-methacryloyloxypropyltrimethoxysilane; acrylic silane-based silane coupling agent such as 3-acryloyloxypropyltrimethoxysilane Isocyanurate silane series silane coupling agent such as 3-isocyanatopropyl triethoxysilane; isocyanurate silane series silane coupling agent such as tris-(trimethoxysilylpropyl) isocyanurate ; Mercaptosilane-based silane coupling agents such as 3-mercaptopropylmethyldimethoxysilane and 3-mercaptopropyltrimethoxysilane; ureasilane-based silane coupling agents such as 3-ureapropyltrialkoxysilane ; and styrylsilane-based silane coupling agents such as p-styryltrimethoxysilane.

又,金屬偶合劑可以為聚合物類型的金屬偶合劑。 分子量為1000以上為較佳,2000以上為更佳。上限為100000以下為較佳,10000以下為更佳。又,能夠與樹脂黏合劑或其前驅物交聯的反應性官能基當量為1000g/mol以下為較佳,500g/mol以下為更佳。Also, the metal coupling agent may be a polymer-type metal coupling agent. The molecular weight is preferably 1000 or more, more preferably 2000 or more. The upper limit is preferably 100,000 or less, and more preferably 10,000 or less. In addition, the equivalent weight of the reactive functional group capable of being crosslinked with the resin binder or its precursor is preferably 1000 g/mol or less, more preferably 500 g/mol or less.

在使金屬偶合劑與在上述改質步驟中所獲得之改質氮化硼粒子(氧化氮化硼粒子等)接觸時,可以在使金屬偶合劑中之水解性基預先進行水解之狀態下接觸。 此時,用藉由使金屬偶合劑中之水解性基預先進行水解而產生之羥基金屬基團(羥基與金屬原子直接鍵結之基團),使金屬偶合劑與在上述改質步驟中所獲得之改質氮化硼粒子(氧化氮化硼粒子等)進行交聯反應亦為較佳。When the metal coupling agent is brought into contact with the modified boron nitride particles (boron oxide nitride particles, etc.) obtained in the above modification step, the contact may be made in a state where the hydrolyzable group in the metal coupling agent is previously hydrolyzed . At this time, a metal hydroxy group (a group in which a hydroxy group and a metal atom are directly bonded) generated by preliminarily hydrolyzing the hydrolyzable group in the metal coupling agent is used to make the metal coupling agent and the above-mentioned modification step. It is also preferable that the obtained modified boron nitride particles (boron nitride oxide particles, etc.) be subjected to a crosslinking reaction.

・硬化性化合物 作為表面修飾劑,亦能夠使用硬化性化合物。 再者,在此所言之硬化性化合物表示與上述金屬偶合劑不同之成分。・Curable compound As the surface modifier, a curable compound can also be used. In addition, the curable compound mentioned here means the component different from the said metal coupling agent.

硬化性化合物為能夠溶解於上述有機溶劑中的化合物為較佳。 硬化性化合物可以為高分子化合物(樹脂),亦可以為低分子化合物。 硬化性化合物的分子量例如為300~1000000。The curable compound is preferably a compound that can be dissolved in the above-mentioned organic solvent. The curable compound may be a polymer compound (resin) or a low molecular weight compound. The molecular weight of the curable compound is, for example, 300 to 1,000,000.

作為樹脂之硬化性化合物可以具有熱塑性,亦可以不具有熱塑性。The curable compound as resin may or may not have thermoplasticity.

硬化性化合物具有交聯性基。 上述交聯性基為能夠與後述樹脂黏合劑或其前驅物(較佳為樹脂黏合劑的前驅物)進行交聯反應之基團亦為較佳。 上述交聯性基為能夠與羥基進行交聯反應之基團亦為較佳。 作為上述交聯性基,例如可以舉出環氧基、氧雜環丁基、氰酸基、異氰酸酯基、含乙烯性雙鍵的基團((甲基)丙烯醯基等)及羧基等。硬化性化合物所具有之上述交聯性基的數量為1個以上為較佳,2個以上為更佳。上述數量沒有上限,例如為10000個。The curable compound has a crosslinkable group. It is also preferable that the above-mentioned crosslinkable group is a group capable of performing a crosslinking reaction with the resin adhesive or its precursor (preferably a precursor of the resin adhesive) described later. It is also preferable that the above-mentioned crosslinkable group is a group capable of performing a crosslinking reaction with a hydroxyl group. As said crosslinkable group, an epoxy group, an oxetanyl group, a cyanate group, an isocyanate group, an ethylenic double bond-containing group ((meth)acryloyl group etc.), a carboxyl group, etc. are mentioned, for example. It is preferable that the number of the said crosslinkable group which a curable compound has is 1 or more, and it is more preferable that it is 2 or more. There is no upper limit to the above-mentioned number, for example, 10,000.

作為樹脂之硬化性化合物,例如可以舉出環氧樹脂、氰酸酯樹脂、酚樹脂、醯亞胺樹脂、異氰酸酯樹脂、苯并㗁𠯤樹脂、氧環丁烷樹脂、胺基樹脂、聚酯樹脂、烯丙基樹脂、二環戊二烯樹脂、聚矽氧樹脂、三𠯤樹脂及三聚氰胺樹脂。 其中,樹脂為環氧樹脂或氰酸酯樹脂為較佳,環氧樹脂為更佳。Examples of curable compounds of resins include epoxy resins, cyanate resins, phenol resins, imide resins, isocyanate resins, benzodiazepine resins, oxetane resins, amino resins, and polyester resins. , Allyl Resin, Dicyclopentadiene Resin, Polysiloxane Resin, Tris Resin and Melamine Resin. Among them, it is preferable that the resin is epoxy resin or cyanate resin, and epoxy resin is more preferable.

上述環氧樹脂為在1分子中具有1個以上(較佳為2個以上)的環氧基之環氧樹脂為較佳。 再者,在本說明書中,苯氧基樹脂亦包含於環氧樹脂中。 作為環氧樹脂,例如可以舉出雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、雙酚AF型環氧樹脂、聯二甲酚型環氧樹脂、苯酚酚醛清漆型環氧樹脂、第三丁基鄰苯二酚型環氧樹脂、萘酚型環氧樹脂、萘型環氧樹脂、萘型4官能環氧樹脂、伸萘基醚型環氧樹脂、縮水甘油胺型環氧樹脂、縮水甘油酯型環氧樹脂、甲酚酚醛清漆型環氧樹脂、聯苯型環氧樹脂、聯苯芳烷基型環氧樹脂、二環戊二烯型環氧樹脂、蒽型環氧樹脂、線狀脂肪族環氧樹脂、具有丁二烯結構之環氧樹脂、脂環式環氧樹脂、雜環式環氧樹脂、含有螺環的環氧樹脂、環己烷二甲醇型環氧樹脂、三羥甲基型環氧樹脂及鹵化環氧樹脂等。It is preferable that the said epoxy resin has 1 or more (preferably 2 or more) epoxy groups in 1 molecule. In addition, in this specification, a phenoxy resin is also contained in an epoxy resin. Examples of epoxy resins include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, bisphenol AF type epoxy resin, bixylenol type epoxy resin, Phenol novolac type epoxy resin, tertiary butylcatechol type epoxy resin, naphthol type epoxy resin, naphthalene type epoxy resin, naphthalene type 4-functional epoxy resin, naphthylene ether type epoxy resin , Glycidylamine type epoxy resin, Glycidyl ester type epoxy resin, Cresol novolac type epoxy resin, Biphenyl type epoxy resin, Biphenyl aralkyl type epoxy resin, Dicyclopentadiene type ring Oxygen resin, anthracene epoxy resin, linear aliphatic epoxy resin, epoxy resin with butadiene structure, alicyclic epoxy resin, heterocyclic epoxy resin, epoxy resin containing spiro ring, ring Hexanedimethanol type epoxy resin, trimethylol type epoxy resin and halogenated epoxy resin, etc.

作為氰酸酯樹脂,例如可以舉出酚醛清漆型氰酸酯樹脂、雙酚A型氰酸酯樹脂、雙酚E型氰酸酯樹脂及四甲基雙酚F型氰酸酯樹脂等雙酚型氰酸酯樹脂及使該等一部分三𠯤化之預聚物。Examples of cyanate resins include bisphenols such as novolak-type cyanate resins, bisphenol A-type cyanate resins, bisphenol E-type cyanate resins, and tetramethylbisphenol F-type cyanate resins. Type cyanate ester resins and prepolymers that have been partially teriminated.

又,作為表面修飾劑(例如,作為硬化性化合物之表面修飾劑),可以使用後述樹脂黏合劑或其前驅物(較佳為樹脂黏合劑的前驅物),亦可以使用除此以外的化合物。Further, as the surface modifier (for example, as a surface modifier of a curable compound), a resin binder or a precursor thereof (preferably a precursor of a resin binder) to be described later may be used, or compounds other than these may be used.

除此以外,關於表面修飾劑,作為與上述表面修飾劑不同之成分,可以使用下述通式(S)所表示之化合物。In addition to this, as a surface modifier, a compound represented by the following general formula (S) can be used as a component different from the above-mentioned surface modifier.

[化學式1]

Figure 02_image001
[Chemical formula 1]
Figure 02_image001

上述通式(1)中, E1 ~E3 分別獨立地表示單鍵、-NH-或-NR-。R表示取代基。 B1 ~B3 分別獨立地表示可以具有取代基的作為環員原子之碳原子的數量為6個以上之芳香環基。 l、m及n分別獨立地表示0以上的整數。 在l為2以上的情況下,存在l個之X1 可以分別相同,亦可以不同。 在m為2以上的情況下,存在m個之X2 可以分別相同,亦可以不同。 在n為2以上的情況下,存在n個之X3 可以分別相同,亦可以不同。 又,l、m及n的合計為2以上。 X1 ~X3 分別獨立地表示通式(S2)所表示之基團。In the above general formula (1), E 1 to E 3 each independently represent a single bond, -NH- or -NR-. R represents a substituent. B 1 to B 3 each independently represent an aromatic ring group in which the number of carbon atoms as ring member atoms which may have a substituent is 6 or more. l, m, and n each independently represent an integer of 0 or more. In the case where l is 2 or more, the X 1s in which there are one may be the same or different. In the case where m is 2 or more, there are m X 2s which may be the same or different. When n is 2 or more, the n X 3 's present may be the same or different. In addition, the sum of l, m and n is 2 or more. X 1 to X 3 each independently represent a group represented by the general formula (S2).

[化學式2]

Figure 02_image003
[Chemical formula 2]
Figure 02_image003

在上述通式(S2)中,*表示鍵結位置。 D1 表示單鍵或二價的連結基。 A1 表示可以具有取代基的作為環員原子之碳原子的數量為6個以上之芳香環基或可以具有取代基的作為環員原子之碳原子的數量為6個以上之環烷環基。 Q及Y1 分別獨立地表示選自包括具有醛基、硼酸基、羥基、環氧基之一價的基團、具有胺基、硫醇基、羧酸基、羧酸酐基之一價的基團、具有異氰酸酯基及氧雜環丁基之一價的基團之群組中的特定官能基。 p表示0以上的整數。 q表示0~2的整數。 在上述通式(S1)中,在D1 、A1 、Q、Y1 、p及q存在複數個之情況下,存在複數個之D1 、A1 、Q、Y1 、p及q可以分別相同,亦可以不同。 但是,在l為1以上且至少1個X1 為羥基之情況下,和作為上述羥基的X1 直接鍵結之B1 中的原子與和E1 直接鍵結之B1 中的原子彼此不相鄰為較佳。在m為1以上且至少1個X2 為羥基之情況下,和作為上述羥基的X2 直接鍵結之B2 中的原子與和E2 直接鍵結之B2 中的原子彼此不相鄰為較佳。在n為1以上且至少1個X3 為羥基之情況下,和作為上述羥基的X3 直接鍵結之B3 中的原子與和E3 直接鍵結之B3 中的原子彼此不相鄰為較佳。In the above general formula (S2), * represents a bonding position. D 1 represents a single bond or a divalent linking group. A 1 represents an aromatic ring group having 6 or more carbon atoms as ring member atoms which may have a substituent or a cycloalkyl ring group having 6 or more carbon atoms as ring member atoms which may have a substituent. Q and Y 1 each independently represent a group selected from the group consisting of a valence group including an aldehyde group, a boronic acid group, a hydroxyl group, and an epoxy group, and a group having a valence of an amine group, a thiol group, a carboxylic acid group, and a carboxylic acid anhydride group. group, a specific functional group in the group of groups having a valence of isocyanate group and oxetanyl group. p represents an integer of 0 or more. q represents an integer of 0-2. In the above general formula (S1), when there are plural D 1 , A 1 , Q, Y 1 , p and q, the plural D 1 , A 1 , Q, Y 1 , p and q may be present They are the same or different. However, in the case where l is 1 or more and at least one X 1 is a hydroxyl group, the atom in B 1 which is directly bonded to X 1 which is the aforementioned hydroxyl group and the atom in B 1 which is directly bonded to E 1 are not mutually exclusive. Adjacent is better. In the case where m is 1 or more and at least one X 2 is a hydroxyl group, the atom in B 2 directly bonded to X 2 as the hydroxyl group and the atom in B 2 directly bonded to E 2 are not adjacent to each other is better. In the case where n is 1 or more and at least one X 3 is a hydroxyl group, the atom in B 3 which is directly bonded to X 3 which is the aforementioned hydroxyl group and the atom in B 3 which is directly bonded to E 3 are not adjacent to each other. is better.

例如,上述表面修飾劑的使用量相對於上述有機溶劑的100質量份為0.0001~20質量份為較佳,0.01~15質量份為更佳,0.05~5質量份為進一步較佳。 表面修飾劑可以單獨使用一種,亦可以使用兩種以上。For example, the usage-amount of the said surface modifier is 0.0001-20 mass parts with respect to 100 mass parts of said organic solvents, Preferably it is 0.01-15 mass parts, More preferably, it is 0.05-5 mass parts. A surface modifier may be used individually by 1 type, and may use 2 or more types.

<中值徑的變化> 在本發明的方法中,在經過一系列的製造方法之前後,在製造方法中所使用之氮化硼粒子與所獲得之改質氮化硼粒子的中值徑的變化率小為較佳。尤其,在本發明中所使用之氮化硼粒子為凝聚狀的粒子之情況下,在經過一系列的製造方法時,維持粒子的凝聚狀態而不被破壞為較佳。 具體而言,由下述式求出之中值徑的變化率小於10%為較佳,小於5%為更佳。上述中值徑的變化率的下限並無特別限制,例如上述中值徑的變化率可以為-5%以上,0%以上亦為較佳。 式:中值徑的變化率(%)=〔1-(所製造之改質氮化硼粒子的中值徑)/(改質氮化硼粒子的製造中所使用之氮化硼粒子的中值徑)〕×100 作為調整中值徑的變化率之方法,例如可以舉出在本發明的方法中調整進行上述水溶液和/或混合液的混合和/或攪拌時的剪切力之方法。<Change in median diameter> In the method of the present invention, it is preferable that the change rate of the median diameter of the boron nitride particles used in the production method and the obtained modified boron nitride particles is small before and after a series of production methods. In particular, when the boron nitride particles used in the present invention are aggregated particles, it is preferable that the aggregated state of the particles is maintained without being destroyed when a series of production methods are passed. Specifically, the change rate of the median diameter obtained from the following formula is preferably less than 10%, and more preferably less than 5%. The lower limit of the change rate of the median diameter is not particularly limited. For example, the change rate of the median diameter may be -5% or more, preferably 0% or more. Formula: Change rate of median diameter (%)=[1-(median diameter of modified boron nitride particles produced)/(median of boron nitride particles used in the production of modified boron nitride particles) value diameter)]×100 As a method of adjusting the rate of change of the median diameter, for example, in the method of the present invention, a method of adjusting the shearing force at the time of mixing and/or stirring the above-mentioned aqueous solution and/or mixed liquid can be mentioned.

[改質氮化硼粒子] 本發明亦包含改質氮化硼粒子的發明。 關於作為本發明的改質氮化硼粒子,藉由X射線光電子能譜分析而檢測之表面上之氧原子濃度超過5.0atom%,與水的接觸角為90°以下,並且由後述式(1)求出之D值為0.010以下。 將滿足該種要件之改質氮化硼粒子在以下亦稱為“本發明的改質氮化硼粒子”。 藉由使用本發明的改質氮化硼粒子,導熱材料的導熱性及剝離強度變得良好。 作為其理由,認為如下。 亦即,認為本發明的改質氮化硼粒子在表面上之氧原子濃度超過5.0atom%,並且與水的接觸角為90°以下,因此本發明的改質氮化硼粒子與形成導熱材料之樹脂黏合劑的親和性良好,並且不易引起導熱材料的凝聚破壞,從而改善導熱材料的剝離強度。 進而,認為本發明的改質氮化硼粒子幾乎不包含氫氧化硼,因此沒有對由氫氧化硼引起之導熱性等的不利影響,並且如上所述與樹脂黏合劑的親和性良好,因此在導熱材料中的熱的轉移亦能夠變得順暢,從而導熱材料的導熱性亦能夠良好。[Modified Boron Nitride Particles] The present invention also includes the invention of modified boron nitride particles. Regarding the modified boron nitride particles of the present invention, the oxygen atomic concentration on the surface detected by X-ray photoelectron spectroscopy analysis exceeds 5.0 atom%, the contact angle with water is 90° or less, and the following formula (1 ) to obtain a D value of 0.010 or less. The modified boron nitride particles satisfying such requirements are also referred to as "modified boron nitride particles of the present invention" hereinafter. By using the modified boron nitride particles of the present invention, the thermal conductivity and peel strength of the thermally conductive material become favorable. The reason for this is considered as follows. That is, it is considered that the oxygen atomic concentration on the surface of the modified boron nitride particles of the present invention exceeds 5.0 atom%, and the contact angle with water is 90° or less. Therefore, the modified boron nitride particles of the present invention are considered to form a thermally conductive material. The resin adhesive has good affinity, and it is not easy to cause the cohesion and damage of the thermally conductive material, thereby improving the peel strength of the thermally conductive material. Furthermore, since the modified boron nitride particles of the present invention hardly contain boron hydroxide, it is considered that there is no adverse effect on thermal conductivity due to boron hydroxide, etc., and the affinity with resin binders is good as described above, so it is considered that The transfer of heat in the thermally conductive material can also be smoothed, so that the thermal conductivity of the thermally conductive material can also be good.

藉由上述本發明的方法所製造之改質氮化硼粒子通常為本發明的改質氮化硼粒子。亦即,本發明的方法為本發明的改質氮化硼粒子的製造方法為較佳。又,以下所說明之本發明的改質氮化硼粒子的較佳條件與藉由本發明的方法所製造之改質氮化硼粒子的較佳條件一致。 再者,本發明的改質氮化硼粒子亦可以為藉由除了上述本發明的方法以外的方法所製造之改質氮化硼粒子。The modified boron nitride particles produced by the above-described method of the present invention are usually modified boron nitride particles of the present invention. That is, it is preferable that the method of the present invention is a method for producing the modified boron nitride particles of the present invention. In addition, the preferable conditions of the modified boron nitride particles of the present invention described below are the same as the preferable conditions of the modified boron nitride particles produced by the method of the present invention. In addition, the modified boron nitride particles of the present invention may be modified boron nitride particles produced by methods other than the method of the present invention described above.

本發明的改質氮化硼粒子中的氮化硼的含量相對於氮化硼粒子的總質量為90質量%以上為較佳,95質量%以上為更佳,99質量%以上為進一步較佳。上述含量的上限並無特別限制,但是例如小於100質量%。The content of boron nitride in the modified boron nitride particles of the present invention is preferably 90% by mass or more, more preferably 95% by mass or more, and even more preferably 99% by mass or more with respect to the total mass of the boron nitride particles . The upper limit of the above-mentioned content is not particularly limited, but is, for example, less than 100% by mass.

本發明的改質氮化硼粒子的結晶結構並無限制,例如可以為六方晶氮化硼或立方晶氮化硼。又,改質氮化硼粒子例如可以為氮化硼奈米片或氮化硼奈米管。改質氮化硼粒子的形狀並無特別限制,亦可以為鱗片狀、平板狀、米粒狀、球形狀、立方體狀、紡錘形狀及不規則形狀中的任一種。又,改質氮化硼粒子可以為該等形狀的微粒凝聚而形成之凝聚狀的粒子(二次粒子)。 整體上,凝聚狀的粒子例如可以為球形,亦可以為不規則形狀。 其中,從提高與樹脂複合時的導熱率的觀點考慮,改質氮化硼粒子為凝聚狀的粒子為較佳。The crystal structure of the modified boron nitride particles of the present invention is not limited, and may be, for example, hexagonal boron nitride or cubic boron nitride. In addition, the modified boron nitride particles may be, for example, boron nitride nanosheets or boron nitride nanotubes. The shape of the modified boron nitride particles is not particularly limited, and may be any of a scale shape, a flat shape, a rice grain shape, a spherical shape, a cube shape, a spindle shape, and an irregular shape. In addition, the modified boron nitride particles may be aggregated particles (secondary particles) formed by agglomerating fine particles of these shapes. As a whole, the aggregated particles may be spherical or irregular, for example. Among them, it is preferable that the modified boron nitride particles are aggregated particles from the viewpoint of improving the thermal conductivity at the time of compounding with the resin.

本發明的改質氮化硼粒子的大小(在改質氮化硼粒子為二次粒子之情況下,作為二次粒子的大小)並無特別限制。其中,在上述粒子的分散性更加優異之觀點而言,本發明的改質氮化硼粒子的中值徑為100μm以下為較佳,80μm以下為更佳,60μm以下為進一步較佳。上述中值徑的下限並無特別限制,但是在處理性和/或導熱性的觀點而言,500nm以上為較佳,10μm以上為更佳,15μm以上為進一步較佳。The size of the modified boron nitride particles of the present invention (when the modified boron nitride particles are secondary particles, the size of the secondary particles) is not particularly limited. Among them, the modified boron nitride particles of the present invention preferably have a median diameter of 100 μm or less, more preferably 80 μm or less, and even more preferably 60 μm or less, from the viewpoint of more excellent dispersibility of the particles. The lower limit of the median diameter is not particularly limited, but from the viewpoint of handleability and/or thermal conductivity, 500 nm or more is preferable, 10 μm or more is more preferable, and 15 μm or more is further more preferable.

本發明的改質氮化硼粒子(尤其為凝聚狀的粒子之改質氮化硼粒子)的壓縮破壞強度為10.0MPa以下為較佳,5.0MPa以下為更佳,4.0MPa以下為進一步較佳。又,上述壓縮破壞強度的下限並無限制,例如上述壓縮破壞強度為0.5MPa以上為較佳,1.0MPa以上為更佳,1.5MPa以上為進一步較佳。 若本發明的改質氮化硼粒子的壓縮破壞硬度在上述範圍內,則改質氮化硼粒子適當堅固且適當脆,因此在形成導熱材料時,藉由一部分的改質氮化硼粒子損壞而改質氮化硼粒子容易填充於粒子彼此的間隙中,從而本發明的效果更加優異。The compressive fracture strength of the modified boron nitride particles of the present invention (especially the modified boron nitride particles of aggregated particles) is preferably 10.0 MPa or less, more preferably 5.0 MPa or less, and even more preferably 4.0 MPa or less . In addition, the lower limit of the compressive rupture strength is not limited. For example, the compressive rupture strength is preferably 0.5 MPa or more, more preferably 1.0 MPa or more, and even more preferably 1.5 MPa or more. When the compressive fracture hardness of the modified boron nitride particles of the present invention is within the above-mentioned range, the modified boron nitride particles are appropriately strong and brittle, and therefore, when forming a thermally conductive material, a part of the modified boron nitride particles are damaged by the modified boron nitride particles. On the other hand, the modified boron nitride particles are easily filled in the gaps between the particles, and the effect of the present invention is further excellent.

在本發明的改質氮化硼粒子中,藉由X射線光電子能譜分析而檢測之改質氮化硼粒子的表面上之氧原子濃度超過5.0atom%。上述氧原子濃度的上限並無特別限制,例如為20.0atom%以下。In the modified boron nitride particles of the present invention, the oxygen atomic concentration on the surface of the modified boron nitride particles detected by X-ray photoelectron spectroscopy analysis exceeds 5.0 atom%. Although the upper limit of the said oxygen atom concentration is not specifically limited, For example, it is 20.0 atom% or less.

在本發明的改質氮化硼粒子中,藉由X射線光電子能譜分析而檢測之改質氮化硼粒子的表面上之碳原子濃度超過3.0atom%為較佳,6.0atom%以上為更佳。上述碳原子濃度的上限並無特別限制,例如為30.0atom%以下。In the modified boron nitride particles of the present invention, the concentration of carbon atoms on the surface of the modified boron nitride particles detected by X-ray photoelectron spectroscopy analysis is preferably more than 3.0 atom%, more preferably 6.0 atom% or more good. The upper limit of the carbon atom concentration is not particularly limited, but is, for example, 30.0 atom% or less.

改質氮化硼粒子的表面上之上述原子濃度如下進行測量。 亦即,藉由X射線光電子分光裝置(XPS)(Ulvac-PHI公司製:Versa Probe II)測量改質氮化硼粒子。作為詳細的測量條件,使用單色Al(管電壓;15kV)作為X射線源,分析面積設為300μm×300μm。藉由每個元素的靈敏度係數來校正藉由測量而獲得之氧原子、氮原子、硼原子及碳原子的峰值面積值。藉由求出氧原子及碳原子與所校正之氧原子、氮原子、硼原子及碳原子的總量之比,能夠測量改質氮化硼粒子的表面上的氧原子濃度及碳原子濃度。The above-mentioned atomic concentration on the surface of the modified boron nitride particles was measured as follows. That is, the modified boron nitride particles were measured by an X-ray photoelectron spectroscopy (XPS) (manufactured by Ulvac-PHI: Versa Probe II). As detailed measurement conditions, monochromatic Al (tube voltage; 15 kV) was used as an X-ray source, and the analysis area was set to 300 μm×300 μm. The peak area values of oxygen atoms, nitrogen atoms, boron atoms, and carbon atoms obtained by the measurement are corrected by the sensitivity coefficient of each element. The oxygen atom concentration and carbon atom concentration on the surface of the modified boron nitride particles can be measured by obtaining the ratio of oxygen atoms and carbon atoms to the corrected total amount of oxygen atoms, nitrogen atoms, boron atoms, and carbon atoms.

關於藉由每個元素的靈敏度係數校正藉由測量而獲得之氧原子、氮原子、硼原子及碳原子的峰值面積值之方法,具體而言,對於氧原子,將528eV至538eV的峰值面積值除以相對於氧原子之靈敏度係數0.733,對於氮原子,將394eV至403eV的峰值面積值除以相對於氮原子之靈敏度係數0.499,對於硼原子,將187eV至196eV的峰值面積值除以相對於硼原子之靈敏度係數0.171,對於碳原子,將282eV至290eV的峰值面積值除以相對於碳原子之靈敏度係數0.314。Regarding the method of correcting the peak area values of oxygen atoms, nitrogen atoms, boron atoms, and carbon atoms obtained by measurement by the sensitivity coefficient of each element, specifically, for oxygen atoms, the peak area values of 528 eV to 538 eV were Divide by the sensitivity coefficient relative to oxygen atoms of 0.733, for nitrogen atoms, divide the peak area value from 394eV to 403eV by the sensitivity coefficient relative to nitrogen atom 0.499, for boron atoms, divide the peak area value from 187eV to 196eV by relative to The sensitivity coefficient for boron atoms is 0.171, and for carbon atoms, the peak area values from 282 eV to 290 eV are divided by the sensitivity coefficient for carbon atoms, 0.314.

關於本發明的改質氮化硼粒子,由下述式(1)求出之D值為0.010以下,0.007以下為較佳。上述D值的下限並無特別限制,例如為0以上。 式(1):D值=B(OH)3 (002)/BN(002) B(OH)3 (002):來自於藉由X射線衍射而測量之具有三斜晶系空間群組之氫氧化硼的(002)面之峰值強度(2θ=25°~30°) BN(002):來自於藉由X射線衍射而測量之具有六方晶系空間群組之氮化硼的(002)面之峰值強度(2θ=27.5°~28.5°)Regarding the modified boron nitride particles of the present invention, the D value calculated from the following formula (1) is 0.010 or less, preferably 0.007 or less. The lower limit of the above D value is not particularly limited, but is, for example, 0 or more. Formula (1): D value=B(OH) 3 (002)/BN(002) B(OH) 3 (002): derived from hydrogen with triclinic space group measured by X-ray diffraction Peak intensity of (002) plane of boron oxide (2θ=25°~30°) BN(002): derived from (002) plane of boron nitride with hexagonal space group measured by X-ray diffraction The peak intensity (2θ=27.5°~28.5°)

本發明的改質氮化硼粒子在表面上之與水的接觸角為90°以下,75°以下為較佳。上述接觸角的下限並無特別限制,例如超過0°。 改質氮化硼粒子與水的接觸角如下進行測量。 亦即,將改質氮化硼粒子放入手壓機用配接器30mmφ中,並以600kgf/cm2 (5880N/cm2 )的壓力加壓1分鐘,從而獲得壓粉體。藉由利用Kyowa Interface Science Co.,Ltd.製接觸角計(DM700)測量所獲得之上述壓粉體與水的接觸角來求出與水的接觸角。接觸角設為讀取在壓粉體上製作液滴之後200ms後的接觸角的值。The contact angle of the modified boron nitride particles of the present invention with water on the surface is 90° or less, preferably 75° or less. The lower limit of the above-mentioned contact angle is not particularly limited, and for example, it exceeds 0°. The contact angle of the modified boron nitride particles with water was measured as follows. That is, the modified boron nitride particles were placed in a 30 mmφ adapter for a hand press, and pressed at a pressure of 600 kgf/cm 2 (5880 N/cm 2 ) for 1 minute to obtain a powder compact. The contact angle with water was calculated|required by measuring the contact angle with water of the said compact obtained by Kyowa Interface Science Co., Ltd. product contact angle meter (DM700). The contact angle was a value obtained by reading the contact angle 200 ms after the formation of droplets on the compact.

本發明的改質氮化硼粒子亦可以為在表面上吸附有表面修飾劑之表面修飾氮化硼粒子。 亦即,本發明的改質氮化硼粒子亦可以為包含氧化氮化硼粒子和吸附於氧化氮化硼粒子的表面上之表面修飾劑之材料。 關於表面修飾劑及表面修飾劑進行表面修飾(吸附)之態樣等,如上所述。 在本發明的改質氮化硼粒子為表面修飾氮化硼粒子之情況下,表面修飾氮化硼粒子中之氧化氮化硼粒子的含量相對於表面修飾氮化硼粒子的總質量為90質量%以上為較佳,99質量%以上為更佳,99.5質量%以上為進一步較佳。上限小於100質量%,99.9999質量%以下為較佳。 表面修飾氮化硼粒子中之表面修飾劑的含量相對於表面修飾氮化硼粒子的總質量為10質量%以下為較佳,1質量%以下為更佳,0.5質量%以下為進一步較佳。下限超過0質量%,0.0001質量%以上為較佳,0.001質量%以上為進一步較佳,0.01質量%以上為特佳,0.1質量%以上為最佳。The modified boron nitride particles of the present invention may also be surface-modified boron nitride particles in which a surface modifier is adsorbed on the surface. That is, the modified boron nitride particles of the present invention may be a material containing boron oxide nitride particles and a surface modifier adsorbed on the surfaces of the boron oxide nitride particles. The surface modification agent and the aspect of surface modification (adsorption) of the surface modification agent are as described above. When the modified boron nitride particles of the present invention are surface-modified boron nitride particles, the content of the oxidized boron nitride particles in the surface-modified boron nitride particles is 90 mass relative to the total mass of the surface-modified boron nitride particles % or more is preferable, 99 mass % or more is more preferable, and 99.5 mass % or more is further preferable. The upper limit is less than 100 mass %, preferably 99.9999 mass % or less. The content of the surface modifier in the surface-modified boron nitride particles is preferably 10% by mass or less, more preferably 1% by mass or less, and even more preferably 0.5% by mass or less, relative to the total mass of the surface-modified boron nitride particles. The lower limit is more than 0 mass %, preferably 0.0001 mass % or more, more preferably 0.001 mass % or more, particularly preferably 0.01 mass % or more, and most preferably 0.1 mass % or more.

本發明的改質氮化硼粒子亦可以為氧化氮化硼粒子其本身。The modified boron nitride particles of the present invention may be boron nitride oxide particles themselves.

本發明的氮化硼粒子用於導熱材料的製造中為較佳,但是本發明的氮化硼粒子的用途並不限定於此。The boron nitride particles of the present invention are preferably used for the production of thermally conductive materials, but the application of the boron nitride particles of the present invention is not limited to this.

[導熱材料形成用組成物(組成物)] 本發明亦係有關一種導熱材料形成用組成物(以下,簡稱為“組成物”)。 本發明的組成物包含改質氮化硼粒子和樹脂黏合劑或其前驅物。 藉由使用本發明的組成物,能夠製作導熱性及剝離強度良好的導熱材料。[Composition for forming a thermally conductive material (composition)] The present invention also relates to a composition for forming a thermally conductive material (hereinafter, simply referred to as a "composition"). The composition of the present invention contains modified boron nitride particles and a resin binder or a precursor thereof. By using the composition of the present invention, a thermally conductive material having good thermal conductivity and peel strength can be produced.

〔改質氮化硼粒子〕 包含組成物之改質氮化硼粒子為藉由本發明的方法所製造之改質氮化硼粒子及作為本發明的改質氮化硼粒子進行了說明之改質氮化硼粒子中的至少任一種,藉由本發明的方法所製造之本發明的改質氮化硼粒子為較佳。 本發明的改質氮化硼粒子的含量相對於組成物的總固體成分為10質量%以上為較佳,20質量%以上為更佳,35質量%以上為進一步較佳。上限小於100質量%,85質量%以下為較佳。 改質氮化硼粒子可以僅使用一種,亦可以使用兩種以上。 在使用兩種以上的改質氮化硼粒子之情況下,例如可以使用中值徑為10μm以上之改質氮化硼粒子和中值徑小於10μm之改質氮化硼粒子這兩者,亦可以使用凝聚狀的改質氮化硼粒子和非凝聚狀的改質氮化硼粒子這兩者。 再者,總固體成分表示形成導熱材料之成分,且不包含溶劑。在此所言之形成導熱材料之成分可以為在形成導熱材料時進行反應(聚合)而化學結構發生變化之成分。又,只要為形成導熱材料之成分,則其性狀可以為液體狀,亦視為固體成分。[Modified boron nitride particles] The modified boron nitride particles containing the composition are at least any of the modified boron nitride particles produced by the method of the present invention and the modified boron nitride particles described as the modified boron nitride particles of the present invention. One, the modified boron nitride particles of the present invention produced by the method of the present invention are preferred. The content of the modified boron nitride particles of the present invention is preferably 10% by mass or more, more preferably 20% by mass or more, and even more preferably 35% by mass or more, based on the total solid content of the composition. The upper limit is less than 100 mass %, preferably 85 mass % or less. Only one type of modified boron nitride particles may be used, or two or more types may be used. In the case of using two or more types of modified boron nitride particles, for example, both modified boron nitride particles having a median diameter of 10 μm or more and modified boron nitride particles having a median diameter of less than 10 μm can be used. Both aggregated modified boron nitride particles and non-aggregated modified boron nitride particles can be used. Furthermore, the total solid content represents the components that form the thermally conductive material, and does not contain a solvent. The components forming the thermally conductive material mentioned herein may be components that undergo a reaction (polymerization) to change the chemical structure when the thermally conductive material is formed. Moreover, as long as it is a component forming a thermally conductive material, its properties may be in a liquid state, and it may be regarded as a solid component.

〔樹脂黏合劑或其前驅物(黏合劑成分)〕 組成物包含樹脂黏合劑或其前驅物。 以下,將樹脂黏合劑或其前驅物亦統稱為黏合劑成分。 黏合劑成分可以為樹脂黏合劑其本身,亦可以為樹脂黏合劑的前驅物。[Resin binder or its precursor (binder component)] The composition includes a resin binder or a precursor thereof. Hereinafter, the resin binder or its precursor is also collectively referred to as a binder component. The adhesive component may be the resin adhesive itself or a precursor of the resin adhesive.

用作樹脂黏合劑其本身之組成物,例如可以舉出包含溶劑和作為溶解於上述溶劑中之聚合物(樹脂)之樹脂黏合劑之組成物。藉由該組成物的溶劑蒸發而上述樹脂黏合劑析出,從而可以獲得上述樹脂黏合劑作為黏合劑(鍵結劑)而發揮功能之導熱材料。 又,在組成物包含熱塑性樹脂作為樹脂黏合劑之情況下,組成物例如可以為包含作為熱塑性樹脂之樹脂黏合劑而不包含溶劑的組成物。亦可以使該組成物加熱熔融之後以所期望的形態冷卻固化,從而獲得上述熱塑性樹脂之樹脂黏合劑作為黏合劑(鍵結劑)而發揮功能之導熱材料。The composition used as the resin binder itself includes, for example, a composition containing a solvent and a resin binder as a polymer (resin) dissolved in the solvent. By evaporating the solvent of the composition and depositing the resin binder, a thermally conductive material in which the resin binder functions as a binder (bonding agent) can be obtained. Moreover, when a composition contains a thermoplastic resin as a resin binder, the composition may be a composition which contains a resin binder as a thermoplastic resin and does not contain a solvent, for example. After heating and melting the composition, it can be cooled and solidified in a desired form to obtain a thermally conductive material in which the resin adhesive of the thermoplastic resin described above functions as a binder (bonding agent).

樹脂黏合劑的前驅物為如下成分:例如在由組成物形成導熱材料之過程中,在預定的條件下進行聚合和/或交聯而成為樹脂黏合劑(聚合物和/或交聯體)。如此形成之樹脂黏合劑在導熱材料中作為黏合劑(鍵結劑)而發揮功能。 作為樹脂黏合劑的前驅物,例如可以舉出硬化性化合物。 作為硬化性化合物,可以舉出藉由熱或光(紫外光等)等進行聚合和/或交聯而硬化之化合物。亦即,可以舉出熱硬化性化合物及光硬化性化合物。該等化合物可以為聚合物,亦可以為單體。硬化性化合物亦可以為兩種以上的化合物(例如主劑和硬化劑)的混合物。再者,樹脂黏合劑的前驅物可以與後述表面修飾劑進行化學反應。The precursor of the resin binder is the following components: for example, in the process of forming the thermally conductive material from the composition, it is polymerized and/or cross-linked under predetermined conditions to become the resin binder (polymer and/or cross-linked body). The resin binder thus formed functions as a binder (bonding agent) in the thermally conductive material. As a precursor of a resin binder, a curable compound is mentioned, for example. As a curable compound, the compound which polymerizes and/or crosslinks and hardens by heat, light (ultraviolet light, etc.) etc. is mentioned. That is, a thermosetting compound and a photocurable compound are mentioned. These compounds may be polymers or monomers. The hardening compound may be a mixture of two or more compounds (eg, a main agent and a hardening agent). Furthermore, the precursor of the resin binder can be chemically reacted with the surface modifier described later.

作為樹脂黏合劑(包含由樹脂黏合劑的前驅物形成之樹脂黏合劑),可以舉出環氧樹脂、聚矽氧樹脂、酚樹脂、聚醯亞胺樹脂、聚酯樹脂、雙馬來醯亞胺樹脂、三聚氰胺樹脂、異氰酸酯系樹脂(聚胺酯樹脂、聚脲樹脂、聚胺酯脲樹脂等)及如自由基聚合物((甲基)丙烯酸樹脂等)具有聚合性雙鍵之2個以上的單體鏈鎖聚合而成之樹脂。Examples of resin binders (including resin binders formed from precursors of resin binders) include epoxy resins, polysiloxane resins, phenol resins, polyimide resins, polyester resins, and bismaleimide resins. Amine resins, melamine resins, isocyanate-based resins (polyurethane resins, polyurea resins, polyurethaneurea resins, etc.) and monomer chains with two or more polymerizable double bonds such as radical polymers ((meth)acrylic resins, etc.) Lock polymerized resin.

又,樹脂黏合劑(包含由樹脂黏合劑的前驅物形成之樹脂黏合劑)例如可以為不同之單體之間之下述(官能基1/官能基2)的一種以上的組合進行反應而形成之樹脂。 (官能基1/官能基2)=(聚合性雙鍵/聚合性雙鍵)、(聚合性雙鍵/硫醇基)、(羧酸鹵化物基團(羧酸氯化物基團等)/第一胺基或第二胺基)、(羧基/第一胺基或第二胺基)(羧酸酐基/第一胺基或第二胺基)、(羧基/氮丙啶基)、(羧基/異氰酸酯基)、(羧基/環氧基)、(羧基/鹵化苄基)、(第一胺基或第二胺基/異氰酸酯基)、(第一胺基、第二胺基或第三胺基/鹵化苄基)、(第一胺基/醛類)、(異氰酸酯基/異氰酸酯基)、(異氰酸酯基/羥基)、(異氰酸酯基/環氧基)、(羥基/鹵化苄基)、(羥基/羧酸酐基)、(羥基/烷氧基甲矽烷基)、(環氧基/第一胺基或第二胺基)、(環氧基/羧酸酐基)、(環氧基/羥基)、(環氧基/環氧基)、(氧雜環丁基/環氧基)、(烷氧基甲矽烷基/烷氧基甲矽烷基)等。 再者,聚合性雙鍵表示自由基聚合等能夠聚合的碳彼此的雙鍵,例如可以舉出(甲基)丙烯醯基及乙烯基中之碳彼此的雙鍵。In addition, the resin binder (including the resin binder formed from the precursor of the resin binder) can be formed by reacting, for example, one or more combinations of the following (functional group 1/functional group 2) between different monomers of resin. (functional group 1/functional group 2) = (polymerizable double bond/polymerizable double bond), (polymerizable double bond/thiol group), (carboxylic acid halide group (carboxylic acid chloride group, etc.)/ first amine group or second amine group), (carboxyl group/first amine group or second amine group) (carboxylic acid anhydride group/first amine group or second amine group), (carboxyl group/aziridine group), ( Carboxyl/Isocyanate), (Carboxy/Epoxy), (Carboxyl/Benzyl Halogen), (First Amino or Second Amino/Isocyanate), (First Amino, Second Amino, or Third Amino) Amine/halogenated benzyl), (first amine/aldehyde), (isocyanato/isocyanato), (isocyanato/hydroxy), (isocyanato/epoxy), (hydroxy/halogenated benzyl), (hydroxyl/carboxylic acid anhydride group), (hydroxyl/alkoxysilyl group), (epoxy group/first amine group or second amine group), (epoxy group/carboxylic acid anhydride group), (epoxy group/ hydroxyl), (epoxy/epoxy), (oxetanyl/epoxy), (alkoxysilyl/alkoxysilyl), etc. In addition, a polymerizable double bond shows the double bond between carbons which can be polymerized by radical polymerization etc., for example, the double bond between carbons in a (meth)acryloyl group and a vinyl group is mentioned.

其中,組成物包含樹脂黏合劑的前驅物作為黏合劑成分為較佳,包含能夠形成環氧樹脂的樹脂黏合劑的前驅物為更佳。 樹脂黏合劑可以單獨使用一種,亦可以使用兩種以上。Among them, the composition preferably contains a precursor of a resin adhesive as the adhesive component, and more preferably contains a precursor of a resin adhesive capable of forming an epoxy resin. One type of resin binder may be used alone, or two or more types may be used.

<環氧樹脂> 樹脂黏合劑(尤其,由樹脂黏合劑的前驅物形成之樹脂黏合劑)為環氧樹脂為較佳。 亦即,組成物包含能夠形成環氧樹脂的黏合劑成分(亦即,環氧化合物等)為較佳。 環氧樹脂能夠由環氧化合物單獨形成或使環氧化合物與其他化合物(酚化合物及胺化合物等含活性氫基的化合物和/或酸酐等)進行聚合而形成。 其中,環氧樹脂使環氧化合物與其他化合物(較佳為酚化合物)進行反應而形成為較佳。<Epoxy resin> The resin adhesive (especially, the resin adhesive formed from the precursor of the resin adhesive) is preferably an epoxy resin. That is, it is preferable that the composition contains a binder component capable of forming an epoxy resin (ie, an epoxy compound, etc.). The epoxy resin can be formed from an epoxy compound alone or by polymerizing an epoxy compound and other compounds (active hydrogen group-containing compounds such as phenol compounds and amine compounds, and/or acid anhydrides, etc.). Among them, the epoxy resin is preferably formed by reacting an epoxy compound with another compound (preferably a phenol compound).

(環氧化合物) 環氧化合物為在1分子中具有至少1個環氧基(環氧乙烷基)之化合物。 上述環氧基為從環氧乙烷環去除1個以上的氫原子(較佳為1個氫原子)而成之基團。如果可能,則上述環氧基還可以具有取代基(直鏈狀或支鏈狀的碳數1~5的烷基等)。(epoxy compound) An epoxy compound is a compound which has at least 1 epoxy group (oxirane group) in 1 molecule. The above-mentioned epoxy group is a group obtained by removing one or more hydrogen atoms (preferably one hydrogen atom) from an ethylene oxide ring. If possible, the above-mentioned epoxy group may further have a substituent (linear or branched alkyl group having 1 to 5 carbon atoms, etc.).

在1分子中,環氧化合物所具有之環氧基的數量為2個以上為較佳,2~40個為更佳,2~10個為進一步較佳,2個為特佳。 環氧化合物的分子量為150~10000為較佳,150~1000為更佳,200~290為進一步較佳。The number of epoxy groups contained in the epoxy compound in one molecule is preferably 2 or more, more preferably 2 to 40, further preferably 2 to 10, and particularly preferably 2. The molecular weight of the epoxy compound is preferably 150-10,000, more preferably 150-1,000, and even more preferably 200-290.

環氧化合物的環氧基含量為2.0~20.0mmol/g為較佳,5.0~15.0mmol/g為更佳,5.5~14.0mmol/g為進一步較佳。 再者,上述環氧基含量表示環氧化合物1g所具有之環氧基的數量。 環氧化合物具有芳香環基(較佳為芳香族烴環基)亦為較佳。The epoxy group content of the epoxy compound is preferably 2.0 to 20.0 mmol/g, more preferably 5.0 to 15.0 mmol/g, and even more preferably 5.5 to 14.0 mmol/g. In addition, the said epoxy group content shows the number of the epoxy group which 1 g of an epoxy compound has. It is also preferable that the epoxy compound has an aromatic ring group (preferably an aromatic hydrocarbon ring group).

環氧化合物可以顯示液晶性,亦可以不顯示液晶性。 亦即,環氧化合物亦可以為液晶化合物。換言之,亦可以為具有環氧基之液晶化合物。The epoxy compound may or may not exhibit liquid crystallinity. That is, the epoxy compound may also be a liquid crystal compound. In other words, it may be a liquid crystal compound having an epoxy group.

其中,環氧化合物為聚羥基芳香環型的環氧丙基醚(聚羥基芳香環型環氧化合物)為較佳。 上述聚羥基芳香環型的環氧丙基醚為如下化合物:使具有2個以上(較佳為2~6個、更佳為2~3個、進一步較佳為2個)的羥基作為取代基之芳香環中之上述2個以上的羥基環氧丙基醚化而成之結構。 上述芳香環可以為芳香族烴環,亦可以為芳香族雜環,芳香族烴環為較佳。上述芳香環可以為多環,亦可以為單環。上述芳香環的環員數為5~15為較佳,6~12為更佳,6為進一步較佳。 上述芳香環可以具有除了羥基以外的取代基,亦可以不具有取代基。 作為上述聚羥基芳香環型的環氧丙基醚,例如可以舉出1,3-伸苯基雙(環氧丙基醚)。Among them, the epoxy compound is preferably a polyhydroxy aromatic ring type glycidyl ether (polyhydroxy aromatic ring type epoxy compound). The glycidyl ether of the above-mentioned polyhydroxyaromatic ring type is a compound having 2 or more (preferably 2 to 6, more preferably 2 to 3, further preferably 2) hydroxyl groups as a substituent A structure in which two or more hydroxy glycidyl groups in the aromatic ring are etherified. The above-mentioned aromatic ring may be an aromatic hydrocarbon ring or an aromatic heterocyclic ring, and an aromatic hydrocarbon ring is preferable. The above-mentioned aromatic ring may be polycyclic or monocyclic. The number of ring members of the aromatic ring is preferably 5 to 15, more preferably 6 to 12, and even more preferably 6. The said aromatic ring may have a substituent other than a hydroxyl group, and may not have a substituent. As said polyhydroxy aromatic ring type glycidyl ether, 1, 3- phenylene bis (glycidyl ether) is mentioned, for example.

除此以外,作為環氧化合物,例如可以舉出至少局部包含棒狀結構之化合物(棒狀化合物)及至少局部包含圓盤狀結構之化合物(圓盤狀化合物)。 以下,對棒狀化合物及圓盤狀化合物進行詳細敘述。In addition, as an epoxy compound, the compound (rod-shaped compound) which contains a rod-shaped structure at least partially, and the compound (disc-shaped compound) which contains a disc-shaped structure at least partially are mentioned, for example. Hereinafter, the rod-shaped compound and the disc-shaped compound will be described in detail.

・棒狀化合物 作為棒狀化合物的環氧化合物,可以舉出偶氮次甲基類、氧化偶氮類、氰基聯苯類、氰基苯基酯類、苯甲酸酯類、環己烷羧酸苯酯類、氰基苯基環己烷類、氰基取代苯基嘧啶類、烷氧基取代苯基嘧啶類、苯基二㗁烷類、二苯乙炔類及烯基環己基芐腈類。不僅能夠使用如上所述之低分子化合物,亦能夠使用高分子化合物。上述高分子化合物為具有低分子的反應性基之棒狀化合物聚合而成之高分子化合物。 作為較佳棒狀化合物,可以舉出下述通式(XXI)所表示之棒狀化合物。 通式(XXI):Q1 -L111 -A111 -L113 -M-L114 -A112 -L112 -Q2 ・Rod-shaped compounds Examples of epoxy compounds of rod-shaped compounds include azomethines, azo oxides, cyanobiphenyls, cyanophenyl esters, benzoates, and cyclohexanecarboxylates Acid phenyl esters, cyanophenylcyclohexanes, cyano-substituted phenylpyrimidines, alkoxy-substituted phenylpyrimidines, phenyldiethanes, diphenylacetylenes and alkenylcyclohexylbenzonitrile . Not only the low-molecular compound as described above, but also the high-molecular compound can be used. The above-mentioned polymer compound is a polymer compound obtained by polymerizing a rod-shaped compound having a low molecular reactive group. Preferred rod-shaped compounds include rod-shaped compounds represented by the following general formula (XXI). General formula (XXI): Q 1 -L 111 -A 111 -L 113 -ML 114 -A 112 -L 112 -Q 2

在通式(XXI)中,Q1 及Q2 分別獨立地為環氧基,L111 、L112 、L113 及L114 分別獨立地表示單鍵或二價的連結基。A111 及A112 分別獨立地表示碳數1~20的二價的連結基(間隔基)。M表示液晶基。 Q1 及Q2 的環氧基可以具有取代基,亦可以不具有取代基。In general formula (XXI), Q 1 and Q 2 are each independently an epoxy group, and L 111 , L 112 , L 113 and L 114 are each independently a single bond or a divalent linking group. A 111 and A 112 each independently represent a divalent linking group (spacer) having 1 to 20 carbon atoms. M represents a liquid crystal group. The epoxy groups of Q 1 and Q 2 may or may not have a substituent.

在通式(XXI)中,L111 、L112 、L113 及L114 分別獨立地表示單鍵或二價的連結基。 作為L111 、L112 、L113 及L114 所表示之二價的連結基,分別獨立地為選自包括-O-、-S-、-CO-、-NR112 -、-CO-O-、-O-CO-O-、-CO-NR112 -、-NR112 -CO-、-O-CO-、-CH2 -O-、-O-CH2 -、-O-CO-NR112 -、-NR112 -CO-O-及-NR112 -CO-NR112 -之群組中的二價的連結基為較佳。上述R112 為碳數1~7的烷基或氫原子。 其中,L113 及L114 分別獨立地為-O-為較佳。 L111 及L112 分別獨立地為單鍵為較佳。In general formula (XXI), L 111 , L 112 , L 113 and L 114 each independently represent a single bond or a divalent linking group. The divalent linking group represented by L 111 , L 112 , L 113 and L 114 is independently selected from the group consisting of -O-, -S-, -CO-, -NR 112 -, -CO-O- , -O-CO-O-, -CO-NR 112 -, -NR 112 -CO-, -O-CO-, -CH 2 -O-, -O-CH 2 -, -O-CO-NR 112 Bivalent linking groups in the group of -, -NR 112 -CO-O- and -NR 112 -CO-NR 112 - are preferred. The above-mentioned R 112 is an alkyl group having 1 to 7 carbon atoms or a hydrogen atom. Among them, it is preferable that L 113 and L 114 are each independently -O-. Preferably, L 111 and L 112 are each independently a single bond.

在通式(XXI)中,A111 及A112 分別獨立地表示碳數1~20的二價的連結基。 二價的連結基可以包含未相鄰之氧原子及硫原子等雜原子。其中,碳數1~12的伸烷基、伸烯基或伸炔基為較佳。上述伸烷基、伸烯基或伸炔基可以具有酯基,亦可以不具有酯基。 二價的連結基為直鏈狀為較佳,並且上述二價的連結基可以具有取代基,亦可以不具有取代基。作為取代基,例如可以舉出鹵素原子(氟原子、氯原子及溴原子)、氰基、甲基及乙基。 其中,A111 及A112 分別獨立地為碳數1~12的伸烷基為較佳,亞甲基為更佳。In the general formula (XXI), A 111 and A 112 each independently represent a divalent linking group having 1 to 20 carbon atoms. The divalent linking group may contain heteroatoms such as non-adjacent oxygen atoms and sulfur atoms. Among them, an alkylene group, an alkenylene group or an alkynylene group having 1 to 12 carbon atoms is preferable. The above-mentioned alkylene group, alkenylene group or alkynylene group may or may not have an ester group. The divalent linking group is preferably linear, and the divalent linking group may or may not have a substituent. As a substituent, a halogen atom (a fluorine atom, a chlorine atom, and a bromine atom), a cyano group, a methyl group, and an ethyl group are mentioned, for example. Among them, A 111 and A 112 are each independently preferably an alkylene group having 1 to 12 carbon atoms, and more preferably a methylene group.

在通式(XXI)中,M表示液晶基,作為上述液晶基,可以舉出公知的液晶基。其中,下述通式(XXII)所表示之基團為較佳。 通式(XXII):-(W1 -L115n -W2 -In the general formula (XXI), M represents a liquid crystal group, and examples of the liquid crystal group include known liquid crystal groups. Among them, the group represented by the following general formula (XXII) is preferable. General formula (XXII): -(W 1 -L 115 ) n -W 2 -

在通式(XXII)中,W1 及W2 分別獨立地表示二價的環狀伸烷基、二價的環狀伸烯基、伸芳基或二價的雜環基。L115 表示單鍵或二價的連結基。n表示1~4的整數。In the general formula (XXII), W 1 and W 2 each independently represent a divalent cyclic alkylene group, a divalent cyclic alkenylene group, an aryl group, or a divalent heterocyclic group. L 115 represents a single bond or a divalent linking group. n represents an integer of 1-4.

作為W1 及W2 ,例如可以舉出1,4-環己二烯基、1,4-環己烷二基、1,4-伸苯基、嘧啶-2,5-二基、吡啶-2,5-二基、1,3,4-噻二唑-2,5-二基、1,3,4-㗁二唑-2,5-二基、萘-2,6-二基、萘-1,5-二基、噻吩-2,5-二基及嗒𠯤-3,6-二基。在為1,4-環己烷二基的情況下,可以為反式及順式的結構異構物中的任一異構物,亦可以為任意比例的混合物。其中,反式為較佳。 W1 及W2 可以分別具有取代基。作為取代基,例如可以舉出上述取代基群組Y中所例示之基團,更具體而言,可以舉出鹵素原子(氟原子、氯原子、溴原子及碘原子)、氰基、碳數1~10的烷基(例如,甲基、乙基及丙基等)、碳數1~10的烷氧基(例如,甲氧基及乙氧基等)、碳數1~10的醯基(例如,甲醯基及乙醯基等)、碳數1~10的烷氧基羰基(例如,甲氧基羰基及乙氧基羰基等)、碳數1~10的醯氧基(例如,乙醯氧基及丙醯氧基等)、硝基、三氟甲基及二氟甲基等。 在W1 存在複數個之情況下,存在複數個之W1 可以分別相同亦可以不同。Examples of W 1 and W 2 include 1,4-cyclohexadienyl, 1,4-cyclohexanediyl, 1,4-phenylene, pyrimidine-2,5-diyl, pyridine- 2,5-diyl, 1,3,4-thiadiazole-2,5-diyl, 1,3,4-oxadiazole-2,5-diyl, naphthalene-2,6-diyl, Naphthalene-1,5-diyl, thiophene-2,5-diyl, and d 𠯤-3,6-diyl. In the case of a 1,4-cyclohexanediyl group, it may be any isomer of trans and cis structural isomers, or may be a mixture in an arbitrary ratio. Among them, trans is preferred. W 1 and W 2 may each have a substituent. Examples of the substituent include the groups exemplified in the above-mentioned substituent group Y, and more specifically, halogen atoms (fluorine atom, chlorine atom, bromine atom and iodine atom), cyano group, carbon atoms 1-10 alkyl groups (for example, methyl, ethyl, and propyl groups, etc.), alkoxy groups with 1-10 carbon atoms (for example, methoxy and ethoxy groups, etc.), and acyl groups with 1-10 carbon atoms (for example, methyl group, acetyl group, etc.), alkoxycarbonyl group with 1 to 10 carbon atoms (for example, methoxycarbonyl group, ethoxycarbonyl group, etc.), aryloxy group with 1 to 10 carbon atoms (for example, Acetyloxy and propionyloxy, etc.), nitro, trifluoromethyl and difluoromethyl, etc. When there are plural W 1s , the plural W 1s may be the same or different from each other.

在通式(XXII)中,L115 表示單鍵或二價的連結基。作為L115 所表示之二價的連結基,可以舉出上述L111 ~L114 所表示之二價的連結基的具體例,例如可以舉出-CO-O-、-O-CO-、-CH2 -O-及-O-CH2 -。 在L115 存在複數個之情況下,存在複數個之L115 可以分別相同亦可以不同。In the general formula (XXII), L 115 represents a single bond or a divalent linking group. Specific examples of the divalent linking group represented by L 111 to L 114 mentioned above include, for example, -CO-O-, -O-CO-, -CO-O-, -O-CO-, - CH 2 -O- and -O-CH 2 -. When there are plural L 115s , the plural L 115s may be the same or different.

將在上述通式(XXII)所表示之液晶基的基本骨架中較佳之骨架例示於以下中。在上述液晶基中,可以由取代基取代該等骨架。Preferred skeletons among the basic skeletons of the liquid crystal groups represented by the general formula (XXII) are shown below. In the above-mentioned liquid crystal groups, the skeletons may be substituted by substituents.

[化學式3]

Figure 02_image005
[Chemical formula 3]
Figure 02_image005

[化學式4]

Figure 02_image007
[Chemical formula 4]
Figure 02_image007

在上述骨架中,在所獲得之導熱材料的導熱性更加優異之觀點而言,聯苯骨架為較佳。 再者,通式(XXI)所表示之化合物能夠參閱日本特表平11-513019號公報(WO97/00600)中所記載的方法來合成。 棒狀化合物可以為具有日本特開平11-323162號公報及日本專利4118691號中所記載的液晶基之單體。Among the above-mentioned skeletons, the biphenyl skeleton is preferable from the viewpoint that the thermal conductivity of the obtained thermally conductive material is more excellent. In addition, the compound represented by the general formula (XXI) can be synthesized by referring to the method described in JP-A No. 11-513019 (WO97/00600). The rod-shaped compound may be a monomer having a liquid crystal group described in Japanese Patent Application Laid-Open No. 11-323162 and Japanese Patent No. 4118691.

其中,棒狀化合物為通式(E1)所表示之化合物為較佳。Among them, the rod-shaped compound is preferably a compound represented by the general formula (E1).

[化學式5]

Figure 02_image009
[Chemical formula 5]
Figure 02_image009

在通式(E1)中,LE1 分別獨立地表示單鍵或二價的連結基。 其中,LE1 為二價的連結基為較佳。 二價的連結基為-O-、-S-、-CO-、-NH-、-CH=CH-、-C≡C-、-CH=N-、-N=CH-、-N=N-、可以具有取代基的伸烷基或包括2個以上的該等組合之基團為較佳,-O-伸烷基-或者-伸烷基-O-為更佳。 再者,上述伸烷基可以為直鏈狀、支鏈狀及環狀中的任一種,但是碳數1~2的直鏈狀伸烷基為較佳。 存在複數個之LE1 可以分別相同亦可以不同。In general formula (E1), L E1 each independently represents a single bond or a divalent linking group. Among them, L E1 is preferably a divalent linking group. Divalent linking groups are -O-, -S-, -CO-, -NH-, -CH=CH-, -C≡C-, -CH=N-, -N=CH-, -N=N - The alkylene group which may have a substituent or a group including two or more of these combinations is preferred, -O-alkylene group- or -alkylene group-O- is more preferred. In addition, the above-mentioned alkylene group may be any of linear, branched and cyclic, but a linear alkylene group having 1 to 2 carbon atoms is preferred. A plurality of L E1s may be the same or different.

在通式(E1)中,LE2 分別獨立地表示單鍵、-CH=CH-、-CO-O-、-O-CO-、-C(-CH3 )=CH-、-CH=C(-CH3 )-、-CH=N-、-N=CH-、-N=N-、-C≡C-、-N=N+ (-O- )-、-N+ (-O- )=N-、-CH=N+ (-O- )-、-N+ (-O- )=CH-、-CH=CH-CO-、-CO-CH=CH-、-CH=C(-CN)-或-C(-CN)=CH-。 其中,LE2 分別獨立地為單鍵、-CO-O-或-O-CO-為較佳。 在LE2 存在複數個之情況下,存在複數個之LE2 可以分別相同亦可以不同。In the general formula (E1), L E2 independently represents a single bond, -CH=CH-, -CO-O-, -O-CO-, -C(-CH 3 )=CH-, -CH=C (-CH 3 )-, -CH=N-, -N=CH-, -N=N-, -C≡C-, -N=N + (-O - )-, -N + (-O - )=N-, -CH=N + (-O - )-, -N + (-O - )=CH-, -CH=CH-CO-, -CO-CH=CH-, -CH=C ( -CN)- or -C(-CN)=CH-. Among them, L E2 is preferably a single bond, -CO-O- or -O-CO- independently. When there are plural L E2s , the plural L E2s may be the same or different.

在通式(E1)中,LE3 分別獨立地表示單鍵、可以具有取代基的5員環或6員環的芳香族環基或者5員環或6員環的非芳香族環基、包括該等環之多環基。 作為LE3 所表示之芳香族環基及非芳香族環基的例子,可以舉出可以具有取代基的1,4-環己烷二基、1,4-環己二烯基、1,4-伸苯基、嘧啶-2,5-二基、吡啶-2,5-二基、1,3,4-噻二唑-2,5-二基、1,3,4-㗁二唑-2,5-二基、萘-2,6-二基、萘-1,5-二基、噻吩-2,5-二基及嗒𠯤-3,6-二基。在1,4-環己烷二基的情況下,可以為反式及順式的結構異構物中的任一異構物,亦可以為任意比例的混合物。其中,反式為較佳。 其中,LE3 為單鍵、1,4-伸苯基或1,4-環己二烯基為較佳。 LE3 所表示之基團所具有之取代基分別獨立地為烷基、烷氧基、鹵素原子、氰基、硝基或乙醯基為較佳,烷基(較佳為碳數1)為更佳。 再者,在取代基存在複數個之情況下,取代基可以分別相同亦可以不同。 在LE3 存在複數個之情況下,存在複數個之LE3 可以分別相同亦可以不同。In the general formula (E1), L E3 each independently represents a single bond, a 5- or 6-membered aromatic ring group that may have a substituent, or a 5- or 6-membered non-aromatic ring group, including Polycyclic groups of such rings. Examples of the aromatic ring group and non-aromatic ring group represented by L E3 include optionally substituted 1,4-cyclohexanediyl, 1,4-cyclohexadienyl, 1,4-cyclohexanediyl, -phenylene, pyrimidine-2,5-diyl, pyridine-2,5-diyl, 1,3,4-thiadiazole-2,5-diyl, 1,3,4-oxadiazole- 2,5-diyl, naphthalene-2,6-diyl, naphthalene-1,5-diyl, thiophene-2,5-diyl and pyridine-3,6-diyl. In the case of a 1,4-cyclohexanediyl group, it may be any isomer of trans and cis structural isomers, or may be a mixture of any ratio. Among them, trans is preferred. Among them, L E3 is preferably a single bond, 1,4-phenylene group or 1,4-cyclohexadienyl group. Preferably, the substituents of the group represented by L E3 are independently an alkyl group, an alkoxy group, a halogen atom, a cyano group, a nitro group or an acetyl group, and the alkyl group (preferably having 1 carbon atoms) is better. In addition, when a plurality of substituents are present, the substituents may be the same or different, respectively. When there are plural L E3s , the plural L E3s may be the same or different.

在通式(E1)中,pe表示0以上的整數。 在pe為2以上的整數之情況下,存在複數個之(-LE3 -LE2 -)可以分別相同亦可以不同。 其中,pe為0~2為較佳,0或1為更佳,0為進一步較佳。In general formula (E1), pe represents an integer of 0 or more. When pe is an integer of 2 or more, there may be a plurality of (-L E3 -L E2 -) which may be the same or different. Among them, pe is preferably 0-2, more preferably 0 or 1, and even more preferably 0.

在通式(E1)中,LE4 分別獨立地表示取代基。 取代基分別獨立地為烷基、烷氧基、鹵素原子、氰基、硝基或乙醯基為較佳,烷基(較佳為碳數1)為更佳。 存在複數個之LE4 可以分別相同亦可以不同。又,在接著進行說明之le為2以上的整數之情況下,在相同的(LE4le 中存在複數個之LE4 亦可以分別相同亦可以不同。In the general formula (E1), L E4 each independently represents a substituent. The substituents are preferably an alkyl group, an alkoxy group, a halogen atom, a cyano group, a nitro group, or an acetyl group, each independently, and an alkyl group (preferably having 1 carbon atoms) is more preferable. A plurality of L E4s may be the same or different, respectively. In addition, when le to be described next is an integer of 2 or more, a plurality of L E4s in the same (L E4 ) le may be the same or different.

在通式(E1)中,le分別獨立地表示0~4的整數。 其中,le分別獨立地為0~2為較佳。 存在複數個之le可以分別相同亦可以不同。In the general formula (E1), le each independently represents an integer of 0 to 4. Among them, le is preferably 0 to 2 independently of each other. A plurality of le may be the same or different, respectively.

在所獲得之導熱材料的導熱性更加優異之觀點而言,棒狀化合物具有聯苯骨架為較佳。 換言之,環氧化合物具有聯苯骨架為較佳,此時的環氧化合物為棒狀化合物為更佳。It is preferable that the rod-shaped compound has a biphenyl skeleton from the viewpoint of more excellent thermal conductivity of the obtained thermally conductive material. In other words, it is preferable that the epoxy compound has a biphenyl skeleton, and it is more preferable that the epoxy compound in this case is a rod-shaped compound.

・圓盤狀化合物 作為圓盤狀化合物之環氧化合物至少局部具有圓盤狀結構。 圓盤狀結構至少具有脂環或芳香族環。尤其,在圓盤狀結構具有芳香族環之情況下,圓盤狀化合物能夠藉由基於分子之間的π-π相互作用形成堆疊結構來形成柱狀結構。 作為圓盤狀結構,具體而言,可以舉出Angew.Chem.Int.Ed.2012,51,7990-7993或日本特開平7-306317號公報中所記載的聯三伸苯結構以及日本特開2007-2220號公報及日本特開2010-244038號公報中所記載的三取代苯結構等。・Disc-shaped compound The epoxy compound, which is a discoid compound, has a discoid structure at least partially. The disk-like structure has at least an alicyclic or aromatic ring. In particular, in the case where the discoid structure has an aromatic ring, the discoid compound can form a columnar structure by forming a stacked structure based on π-π interaction between molecules. Specific examples of the disc-shaped structure include the bitriphenylene structure described in Angew.Chem.Int.Ed. 2012, 51, 7990-7993 or Japanese Patent Laid-Open No. 7-306317, and Japanese Patent Application Laid-Open. Trisubstituted benzene structures and the like described in 2007-2220 A and JP 2010-244038 A.

只要使用圓盤狀化合物作為環氧化合物,則可以獲得顯示高導熱性之導熱材料。作為其原因,認為與棒狀化合物僅能夠直線(一維)導熱的情況相對地,圓盤狀化合物能夠在法線方向上平面(二維)導熱,因此導熱路徑增加而導熱率得到提高。As long as a discoid compound is used as the epoxy compound, a thermally conductive material showing high thermal conductivity can be obtained. The reason for this is that the disk-shaped compound can conduct planar (two-dimensional) heat in the normal direction, while the rod-shaped compound can conduct heat only linearly (one-dimensionally).

上述圓盤狀化合物具有3個以上的環氧基為較佳。包含具有3個以上的環氧基之圓盤狀化合物之組成物的硬化物存在玻璃轉移溫度高且耐熱性高之傾向。 圓盤狀化合物所具有之環氧基的數量為8個以下為較佳,6個以下為更佳。It is preferable that the above-mentioned discotic compound has three or more epoxy groups. The hardened|cured material which consists of the composition of the discotic compound which has 3 or more epoxy groups exists in the tendency for glass transition temperature to be high, and to have high heat resistance. The number of epoxy groups possessed by the discotic compound is preferably 8 or less, more preferably 6 or less.

作為圓盤狀化合物的具體例,可以舉出在C.Destrade et al.,Mol.Crysr.Liq.Cryst.,vol.71,page 111(1981);日本化學會編、季刊化學總說、No.22、液晶化學、第5章、第10章第2節(1994);B.Kohne et al.,Angew.Chem.Soc.Chem.Comm.,page 1794(1985);J.Zhang et al.,J.Am.Chem.Soc.,vol.116,page 2655(1994)及日本專利第4592225號中所記載之化合物等中將末端中的至少1個(較佳為3個以上)設為環氧基之化合物。 作為圓盤狀化合物,可以舉出在Angew.Chem.Int.Ed.2012,51,7990-7993及日本特開平7-306317號公報中所記載的聯三伸苯結構以及日本特開2007-2220號公報及日本特開2010-244038號公報中所記載的3取代苯結構中將末端中的至少1個(較佳為3個以上)設為環氧基之化合物等。Specific examples of discoid compounds include C. Destrade et al., Mol. Crysr. Liq. Cryst., vol. 71, page 111 (1981); .22, Liquid Crystal Chemistry, Chapter 5, Chapter 10, Section 2 (1994); B. Kohne et al., Angew. Chem. Soc. Chem. Comm., page 1794 (1985); J. Zhang et al. , J.Am.Chem.Soc., vol.116, page 2655 (1994) and in the compounds described in Japanese Patent No. 4592225, etc., at least one (preferably three or more) of the terminals is a ring Oxygen compounds. Examples of the discotic compound include bitriphenylene structures described in Angew.Chem.Int.Ed. 2012, 51, 7990-7993 and Japanese Patent Laid-Open No. 7-306317, and Japanese Patent Laid-Open No. 2007-2220 Among the tri-substituted benzene structures described in Japanese Patent Application Laid-Open No. 2010-244038, at least one (preferably three or more) of the terminals is an epoxy group, and the like.

・其他環氧化合物 作為除了上述環氧化合物以外的其他環氧化合物,例如可以舉出通式(DN)所表示之環氧化合物。・Other epoxy compounds As another epoxy compound other than the said epoxy compound, the epoxy compound represented by general formula (DN) is mentioned, for example.

[化學式6]

Figure 02_image011
[Chemical formula 6]
Figure 02_image011

在通式(DN)中,nDN 表示0以上的整數,0~5為較佳,1為更佳。 RDN 表示單鍵或二價的連結基。作為二價的連結基,-O-、-O-CO-、-CO-O-、-S-、伸烷基(碳數為1~10為較佳。)、伸芳基(碳數為6~20為較佳。)或包括該等組合之基團為較佳,伸烷基為更佳,亞甲基為更佳。In the general formula (DN), n DN represents an integer of 0 or more, preferably 0 to 5, and more preferably 1. R DN represents a single bond or a divalent linking group. As the divalent linking group, -O-, -O-CO-, -CO-O-, -S-, alkylene group (preferably with 1 to 10 carbon atoms), arylidene group (with carbon number of 1 to 10) 6-20 are preferred.) or groups including these combinations are preferred, alkylene is more preferred, and methylene is more preferred.

作為其他環氧化合物,亦可以舉出縮環有環氧基之化合物。作為該種化合物,例如可以舉出3,4:8,9-二環氧雙環[4.3.0]壬烷等。As another epoxy compound, the compound which has an epoxy group in a condensed ring is also mentioned. As such a compound, 3,4:8,9- diepoxybicyclo[4.3.0]nonane etc. are mentioned, for example.

作為其他環氧化合物,除此以外,例如可以舉出雙酚A、F、S、AD等作為環氧丙基醚之雙酚A型環氧化合物、雙酚F型環氧化合物、雙酚S型環氧化合物、雙酚AD型環氧化合物等;添加了氫之雙酚A型環氧化合物、添加了氫之雙酚AD型環氧化合物等;酚酚醛清漆型的環氧丙基醚(酚酚醛清漆型環氧化合物)、甲酚酚醛清漆型的環氧丙基醚(甲酚酚醛清漆型環氧化合物)、雙酚A酚醛清漆型的環氧丙基醚等;二環戊二烯型的環氧丙基醚(二環戊二烯型環氧化合物);二羥基戊二烯型的環氧丙基醚(二羥基戊二烯型環氧化合物);苯聚羧酸型的縮水甘油酯(苯聚羧酸型環氧化合物);及三苯酚甲烷型環氧化合物。As other epoxy compounds, for example, bisphenol A, F, S, AD and the like which are glycidyl ethers such as bisphenol A type epoxy compounds, bisphenol F type epoxy compounds, and bisphenol S can be mentioned. type epoxy compounds, bisphenol AD type epoxy compounds, etc.; hydrogen added bisphenol A type epoxy compounds, hydrogen added bisphenol AD type epoxy compounds, etc.; novolac type glycidyl ether ( Novolac type epoxy compound), cresol novolak type glycidyl ether (cresol novolac type epoxy compound), bisphenol A novolac type glycidyl ether, etc.; dicyclopentadiene Type glycidyl ether (dicyclopentadiene type epoxy compound); dihydroxypentadiene type glycidyl ether (dihydroxypentadiene type epoxy compound); benzene polycarboxylic acid type Glycerides (benzene polycarboxylic acid type epoxy compounds); and trisphenol methane type epoxy compounds.

在組成物包含環氧化合物之情況下,其含量相對於組成物的總固體成分為1~40質量%為較佳,3~30質量%為更佳,6~20質量%為進一步較佳。 環氧化合物可以單獨使用一種,亦可以使用兩種以上。When the composition contains an epoxy compound, its content is preferably 1 to 40% by mass, more preferably 3 to 30% by mass, and even more preferably 6 to 20% by mass relative to the total solid content of the composition. An epoxy compound may be used individually by 1 type, and may use 2 or more types.

(含活性氫基的化合物) 環氧樹脂使環氧化合物與含活性氫基的化合物進行反應而形成為較佳。 含活性氫基的化合物為具有1個以上(較佳為2個以上,更佳為2~10個)之具有活性氫之基團(活性氫基)之化合物。 作為活性氫基,例如可以舉出羥基、第一胺基或第二胺基及巰基等,其中,羥基為較佳。 含活性氫基的化合物為具有2個以上(較佳為3個以上,更佳為3~6個)之羥基之多元醇為較佳。(compounds containing active hydrogen groups) The epoxy resin is preferably formed by reacting an epoxy compound with an active hydrogen group-containing compound. The active hydrogen group-containing compound is a compound having one or more (preferably two or more, more preferably 2 to 10) groups having active hydrogen (active hydrogen group). As an active hydrogen group, a hydroxyl group, a 1st amino group or a 2nd amino group, a mercapto group, etc. are mentioned, for example, Among them, a hydroxyl group is preferable. The active hydrogen group-containing compound is preferably a polyhydric alcohol having 2 or more (preferably 3 or more, more preferably 3 to 6) hydroxyl groups.

其中,與環氧化合物組合使用之含活性氫基的化合物為酚化合物為較佳。 亦即,本發明的組成物包含環氧化合物及酚化合物作為上述樹脂黏合劑或其前驅物為較佳。 酚化合物為具有1個以上(較佳為2個以上,更佳為3個以上,進一步較佳為3~6個)之酚性羥基之化合物。 從本發明的效果更加優異之觀點考慮,作為含活性氫基的化合物,可以舉出通式(P1)所表示之化合物。通式(P1)所表示之化合物為酚化合物。Among them, the active hydrogen group-containing compound used in combination with the epoxy compound is preferably a phenol compound. That is, it is preferable that the composition of this invention contains an epoxy compound and a phenol compound as the said resin binder or its precursor. The phenolic compound is a compound having one or more (preferably two or more, more preferably three or more, further preferably 3 to 6) phenolic hydroxyl groups. From the viewpoint of more excellent effects of the present invention, examples of the active hydrogen group-containing compound include compounds represented by the general formula (P1). The compound represented by the general formula (P1) is a phenolic compound.

・通式(P1)所表示之化合物 將通式(P1)示於以下。・Compounds represented by the general formula (P1) General formula (P1) is shown below.

[化學式7]

Figure 02_image013
[Chemical formula 7]
Figure 02_image013

在通式(P1)中,m1表示0以上的整數。 m1為0~10為較佳,0~3為更佳,0或1為進一步較佳,1為特佳。In the general formula (P1), m1 represents an integer of 0 or more. m1 is preferably 0 to 10, more preferably 0 to 3, more preferably 0 or 1, and particularly preferably 1.

在通式(P1)中,na及nc分別獨立地表示1以上的整數。 na及nc分別獨立地為1~4為較佳。In the general formula (P1), na and nc each independently represent an integer of 1 or more. Preferably, na and nc are each independently 1 to 4.

在通式(P1)中,R1 及R6 分別獨立地表示氫原子、鹵素原子、羧酸基、硼酸基、醛基、烷基、烷氧基或烷氧基羰基。 上述烷基可以為直鏈狀,亦可以為支鏈狀。上述烷基的碳數為1~10為較佳。上述烷基可以具有取代基,亦可以不具有取代基。 上述烷氧基中之烷基部分及上述烷氧基羰基中之烷基部分與上述烷基相同。 R1 及R6 分別獨立地為氫原子或鹵素原子為較佳,氫原子或氯原子為更佳,氫原子為進一步較佳。In the general formula (P1), R 1 and R 6 each independently represent a hydrogen atom, a halogen atom, a carboxylic acid group, a boronic acid group, an aldehyde group, an alkyl group, an alkoxy group or an alkoxycarbonyl group. The above-mentioned alkyl group may be linear or branched. It is preferable that the carbon number of the said alkyl group is 1-10. The above-mentioned alkyl group may or may not have a substituent. The alkyl moiety in the above-mentioned alkoxy group and the alkyl moiety in the above-mentioned alkoxycarbonyl group are the same as the above-mentioned alkyl group. Preferably, R 1 and R 6 are each independently a hydrogen atom or a halogen atom, more preferably a hydrogen atom or a chlorine atom, and even more preferably a hydrogen atom.

在通式(P1)中,R7 表示氫原子或羥基。 在R7 存在複數個之情況下,存在複數個之R7 可以分別相同亦可以不同。 在R7 存在複數個之情況下,存在複數個之R7 中的至少1個R7 表示羥基亦為較佳。In the general formula (P1), R 7 represents a hydrogen atom or a hydroxyl group. When there are plural R 7s, the plural R 7s present may be the same or different. When plural R 7s are present, it is also preferable that at least one R 7 among plural R 7s represents a hydroxyl group.

在通式(P1)中,Lx1 表示單鍵、-C(R2 )(R3 )-或-CO-,-C(R2 )(R3 )-或-CO-為較佳。 Lx2 表示單鍵、-C(R4 )(R5 )-或-CO-,-C(R4 )(R5 )-或-CO-為較佳。 R2 ~R5 分別獨立地表示氫原子或取代基。 上述取代基分別獨立地為羥基、苯基、鹵素原子、羧酸基、硼酸基、醛基、烷基、烷氧基或烷氧基羰基為較佳,羥基、鹵素原子、羧酸基、硼酸基、醛基、烷基、烷氧基或烷氧基羰基為更佳。 上述烷基可以為直鏈狀,亦可以為支鏈狀。上述烷基的碳數為1~10為較佳。上述烷基可以具有取代基,亦可以不具有取代基。 上述烷氧基中之烷基部分及上述烷氧基羰基中之烷基部分與上述烷基相同。 上述苯基可以具有取代基,亦可以不具有取代基,在具有取代基之情況下,具有1~3個羥基為更佳。 R2 ~R5 分別獨立地為氫原子或羥基為較佳,氫原子為更佳。 Lx1 及Lx2 分別獨立地為-CH2 -、-CH(OH)-、-CO-或-CH(Ph)-為較佳。 上述Ph表示可以具有取代基的苯基。 再者,在通式(P1)中,在R4 存在複數個之情況下,存在複數個之R4 可以分別相同亦可以不同。在R5 存在複數個之情況下,存在複數個之R5 可以分別相同亦可以不同。In the general formula (P1), L x1 represents a single bond, -C(R 2 )(R 3 )- or -CO-, preferably -C(R 2 )(R 3 )- or -CO-. L x2 represents a single bond, -C(R 4 )(R 5 )- or -CO-, preferably -C(R 4 )(R 5 )- or -CO-. R 2 to R 5 each independently represent a hydrogen atom or a substituent. The above-mentioned substituents are preferably hydroxyl, phenyl, halogen atom, carboxylic acid group, boronic acid group, aldehyde group, alkyl group, alkoxy group or alkoxycarbonyl group, and hydroxyl group, halogen atom, carboxylic acid group, boronic acid group are preferred. group, aldehyde group, alkyl group, alkoxy group or alkoxycarbonyl group is more preferred. The above-mentioned alkyl group may be linear or branched. It is preferable that the carbon number of the said alkyl group is 1-10. The above-mentioned alkyl group may or may not have a substituent. The alkyl moiety in the above-mentioned alkoxy group and the alkyl moiety in the above-mentioned alkoxycarbonyl group are the same as the above-mentioned alkyl group. The phenyl group may or may not have a substituent, and when it has a substituent, it is more preferable to have 1 to 3 hydroxyl groups. Preferably, R 2 to R 5 are each independently a hydrogen atom or a hydroxyl group, more preferably a hydrogen atom. Preferably, L x1 and L x2 are each independently -CH 2 -, -CH(OH)-, -CO- or -CH(Ph)-. The above-mentioned Ph represents an optionally substituted phenyl group. Furthermore, in the general formula (P1), when there are plural R 4s , the plural R 4s present may be the same or different. When there are plural R 5s , the plural R 5s may be the same or different.

在通式(P1)中,Ar1 及Ar2 分別獨立地表示苯環基或萘環基。 Ar1 及Ar2 分別獨立地為苯環基為較佳。In the general formula (P1), Ar 1 and Ar 2 each independently represent a phenyl ring group or a naphthalene ring group. It is preferable that Ar 1 and Ar 2 are each independently a phenyl ring group.

在通式(P1)中,Qa 表示氫原子、烷基、苯基、鹵素原子、羧酸基、硼酸基、醛基、烷氧基或烷氧基羰基。 上述烷基可以為直鏈狀,亦可以為支鏈狀。上述烷基的碳數為1~10為較佳。上述烷基可以具有取代基,亦可以不具有取代基。 上述烷氧基中之烷基部分及上述烷氧基羰基中之烷基部分與上述烷基相同。 上述苯基可以具有取代基,亦可以不具有取代基。 Qa 相對於Qa 所鍵結之苯環基可以具有之羥基,在對位上鍵結為較佳。 Qa 為氫原子或烷基為較佳。上述烷基為甲基為較佳。In the general formula (P1), Q a represents a hydrogen atom, an alkyl group, a phenyl group, a halogen atom, a carboxylic acid group, a boronic acid group, an aldehyde group, an alkoxy group or an alkoxycarbonyl group. The above-mentioned alkyl group may be linear or branched. It is preferable that the carbon number of the said alkyl group is 1-10. The above-mentioned alkyl group may or may not have a substituent. The alkyl moiety in the above-mentioned alkoxy group and the alkyl moiety in the above-mentioned alkoxycarbonyl group are the same as the above-mentioned alkyl group. The above-mentioned phenyl group may or may not have a substituent. Q a is preferably bonded at the para position with respect to the hydroxyl group that the phenyl ring group to which Q a is bonded may have. Q a is preferably a hydrogen atom or an alkyl group. The above-mentioned alkyl group is preferably a methyl group.

再者,在通式(P1)中,在R7 、Lx2 和/或Qa 存在複數個之情況下,存在複數個之R7 、Lx2 和/或Qa 可以分別相同亦可以不同。Furthermore, in the general formula (P1), when there are plural R 7 , L x2 and/or Q a , the plural R 7 , L x2 and/or Q a may be the same or different.

・通式(P2)所表示之化合物 作為含活性氫基的化合物(較佳為酚化合物),亦可以舉出通式(P2)所表示之化合物。・Compounds represented by the general formula (P2) As an active hydrogen group containing compound (preferably a phenol compound), the compound represented by general formula (P2) is also mentioned.

[化學式8]

Figure 02_image015
[Chemical formula 8]
Figure 02_image015

在上述通式(P2)中,在存在複數個由相同符號表示之基團之情況下,存在複數個之由相同符號表示之基團可以分別相同,亦可以不同。In the above-mentioned general formula (P2), when there are plural groups represented by the same symbols, the plural groups represented by the same symbols may be the same or different.

在通式(P2)中,E1 ~E6 分別獨立地表示單鍵、-NH-或-NR-。 R表示取代基。作為R所表示之取代基,例如可以舉出碳數1~5的直鏈狀或支鏈狀的烷基。 E1 ~E6 分別獨立地為-NH-或-NR-為較佳,-NH-為更佳。In the general formula (P2), E 1 to E 6 each independently represent a single bond, -NH- or -NR-. R represents a substituent. As a substituent represented by R, a C1-C5 linear or branched alkyl group is mentioned, for example. Preferably, E 1 to E 6 are each independently -NH- or -NR-, more preferably -NH-.

在通式(P2)中,B1 、B2 、B3 及B4 分別表示k+1價、l+1價、m+1價及n+1價的有機基,該等中之至少1個表示可以具有取代基的k+1價、l+1價、m+1價或n+1價的芳香環基。In the general formula (P2), B 1 , B 2 , B 3 and B 4 represent organic groups of k+1 valence, l+1 valence, m+1 valence and n+1 valence, respectively, and at least 1 of them Each represents a k+1-valent, l+1-valent, m+1-valent or n+1-valent aromatic ring group which may have a substituent.

作為B1 ~B4 所表示之有機基,例如可以舉出從可以具有碳數1~20的雜原子的烴去除j個氫原子而成之基團等。再者,j個是指k+1個、l+1個、m+1個或n+1個。 其中,作為去除j個氫原子之前的烴,例如可以舉出可以具有取代基的碳數1~20的脂肪族烴、可以具有取代基的碳數3~20的脂肪族環及可以具有取代基的碳數3~20的芳香環等。 作為碳數1~20的脂肪族烴,例如可以舉出甲烷、乙烷、丙烷、丁烷、戊烷、己烷及庚烷等。 作為碳數3~20的脂肪族環,例如可以舉出環己烷環、環庚烷環、降莰烷環及金剛烷環等。 作為碳數3~20的芳香環,例如可以舉出碳數6~20的芳香族烴及碳數3~20的芳香族雜環等。 作為碳數6~20的芳香族烴,例如可以舉出苯環、萘環、蒽環等,作為碳數3~20的芳香族雜環,例如可以舉出呋喃環、吡咯環、噻吩環、吡啶環、噻唑環、咔唑環、吲哚環及苯并噻唑環等。The organic group represented by B 1 to B 4 includes, for example, a group obtained by removing j hydrogen atoms from a hydrocarbon which may have a hetero atom having 1 to 20 carbon atoms. In addition, j number means k+1 number, l+1 number, m+1 number or n+1 number. Among them, examples of hydrocarbons before the removal of j hydrogen atoms include optionally substituted aliphatic hydrocarbons having 1 to 20 carbon atoms, optionally substituted aliphatic rings having 3 to 20 carbon atoms, and optionally substituted aliphatic hydrocarbons. Aromatic rings with 3 to 20 carbon atoms, etc. Examples of the aliphatic hydrocarbons having 1 to 20 carbon atoms include methane, ethane, propane, butane, pentane, hexane, and heptane. As a C3-C20 aliphatic ring, a cyclohexane ring, a cycloheptane ring, a norbornane ring, an adamantane ring, etc. are mentioned, for example. Examples of the aromatic ring having 3 to 20 carbon atoms include an aromatic hydrocarbon having 6 to 20 carbon atoms, an aromatic heterocyclic ring having 3 to 20 carbon atoms, and the like. Examples of the aromatic hydrocarbons having 6 to 20 carbon atoms include a benzene ring, a naphthalene ring, an anthracene ring, and the like, and examples of the aromatic heterocycles having 3 to 20 carbon atoms include a furan ring, a pyrrole ring, a thiophene ring, Pyridine ring, thiazole ring, carbazole ring, indole ring and benzothiazole ring, etc.

該等中,作為B1 ~B4 所表示之有機基,從可以具有取代基的芳香環去除j個氫原子而成之基團為較佳,從苯環去除j個氫原子而成之基團為更佳。Among these, as the organic group represented by B 1 to B 4 , a group obtained by removing j hydrogen atoms from an optionally substituted aromatic ring is preferable, and a group obtained by removing j hydrogen atoms from a benzene ring is preferable A group is better.

在通式(P2)中,k、l、m及n分別獨立地表示0以上的整數。但是,存在k、l、r個之m及n的合計為2個以上。 k、l、m及n分別獨立地為0~5為較佳,1~2為更佳。 再者,在k為0的情況下,B1 不具有X1 。在l為0的情況下,B2 不具有X2 。在m為0的情況下,B3 不具有X3 。在n為0的情況下,B4 不具有X4In the general formula (P2), k, l, m, and n each independently represent an integer of 0 or more. However, the sum of m and n of k, l, and r is two or more. Preferably k, l, m and n are each independently 0 to 5, more preferably 1 to 2. Furthermore, when k is 0, B 1 does not have X 1 . In the case where l is 0, B 2 does not have X 2 . In the case where m is 0, B 3 does not have X 3 . In the case where n is 0, B 4 does not have X 4 .

在通式(P2)中,存在k、l、r個之m及n的合計數為2個以上,2~12的整數為較佳,4~8的整數為更佳。 例如,k為1以上(更佳為1~2)為較佳,l為1以上(更佳為1~2)為較佳,m為1以上(更佳為1~2)為較佳,n為1以上(更佳為1~2)為較佳。In the general formula (P2), the total number of m and n in which k, l, and r exist is two or more, preferably an integer of 2 to 12, and more preferably an integer of 4 to 8. For example, k is preferably 1 or more (more preferably 1-2), l is preferably 1 or more (more preferably 1-2), m is preferably 1 or more (more preferably 1-2), It is preferable that n is 1 or more (more preferably 1 to 2).

L表示二價的有機基。 作為有機基,例如可以舉出可以具有取代基的二價的芳香環基、可以具有取代基的二價的脂肪族烴基、可以具有取代基的二價的脂肪族環基、-O-、-S-、-N(RN )-或-C(=O)-或該等組合而成之基團。 RN 表示取代基。作為RN 所表示之取代基,例如可以舉出碳數1~5的直鏈狀或支鏈狀的烷基等。 又,作為芳香環基、脂肪族烴基及脂肪族環基可以具有的取代基,例如可以舉出碳數1~5的直鏈狀或支鏈狀的烷基等。L represents a divalent organic group. Examples of the organic group include an optionally substituted divalent aromatic ring group, an optionally substituted divalent aliphatic hydrocarbon group, an optionally substituted divalent aliphatic ring group, -O-, - S-, -N(R N )- or -C(=O)- or a combination thereof. R N represents a substituent. Examples of the substituent represented by R N include a linear or branched alkyl group having 1 to 5 carbon atoms. Moreover, as a substituent which an aromatic ring group, an aliphatic hydrocarbon group, and an aliphatic ring group may have, a C1-C5 linear or branched alkyl group etc. are mentioned, for example.

作為芳香環基,例如可以舉出碳數6~20的芳香族烴基及碳數3~20的芳香族雜環基等。 作為構成碳數6~20的芳香族烴基之芳香族烴,例如可以舉出苯環等單環式芳香環;萘環及蒽環等多環式芳香環;等,作為碳數3~20的芳香族雜環,例如可以舉出呋喃環、吡咯環、噻吩環、吡啶環及噻唑環等單環式芳香環;苯并噻唑環、咔唑環及吲哚環等多環式芳香環;等。 再者,關於作為L的芳香環基,可以舉出從上述例示去除2個氫原子而成之基團。Examples of the aromatic ring group include an aromatic hydrocarbon group having 6 to 20 carbon atoms, an aromatic heterocyclic group having 3 to 20 carbon atoms, and the like. Examples of the aromatic hydrocarbons constituting the aromatic hydrocarbon groups having 6 to 20 carbon atoms include monocyclic aromatic rings such as benzene rings; polycyclic aromatic rings such as naphthalene rings and anthracene rings; Examples of the aromatic heterocycle include monocyclic aromatic rings such as furan ring, pyrrole ring, thiophene ring, pyridine ring and thiazole ring; polycyclic aromatic rings such as benzothiazole ring, carbazole ring and indole ring; etc. . In addition, about the aromatic ring group which is L, the group which removed two hydrogen atoms from the above-mentioned example is mentioned.

作為脂肪族烴基,例如可以舉出碳數1~12的伸烷基等,具體而言,可以舉出亞甲基、伸乙基、伸丙基、伸丁基、伸戊基、伸己基、甲基伸己基及伸庚基等。The aliphatic hydrocarbon group includes, for example, an alkylene group having 1 to 12 carbon atoms, and specifically, a methylene group, an ethylidene group, a propylidene group, a butylene group, a pentylene group, a hexylene group, Methyl hexyl and heptyl, etc.

作為構成脂肪族環基之脂肪族環,例如可以舉出環己烷環、環庚烷環、降莰烷環及金剛烷環等。 再者,關於作為L的脂肪族環基,可以舉出從上述例示去除2個氫原子而成之基團。As an aliphatic ring which comprises an aliphatic cyclic group, a cyclohexane ring, a cycloheptane ring, a norbornane ring, an adamantane ring, etc. are mentioned, for example. In addition, about the aliphatic ring group which is L, the group which removed two hydrogen atoms from the above-mentioned example is mentioned.

作為可以具有取代基的二價的芳香環基、可以具有取代基的二價的脂肪族烴基、可以具有取代基的二價的脂肪族環基或者-O-、-S-、-N(RN )-或-C(=O)-組合而成之基團,不僅為包括該等2個以上的組合之二價的連結基,而且亦可以為經由單鍵將相同種類的基團(例如,芳香環基)組合2個以上而成之二價的連結基。An optionally substituted divalent aromatic ring group, an optionally substituted divalent aliphatic hydrocarbon group, an optionally substituted divalent aliphatic ring group, or -O-, -S-, -N(R The group formed by N )- or -C(=O)- combination is not only a bivalent linking group including these two or more combinations, but also a group of the same type (for example, a single bond) , aromatic ring group) is a bivalent linking group formed by combining two or more.

在本發明中,從導熱材料的導熱性更加優異之觀點考慮,L的兩末端為碳原子為較佳。末端的碳原子亦可以為環狀結構的一部分。 又,在本發明中,從導熱材料的導熱性更加優異之觀點考慮,上述通式(P2)中的L為具有選自包括可以具有取代基的二價的芳香環基、可以具有取代基的二價的脂肪族環基及可以具有碳數2以上的支鏈的伸烷基之群組中的至少一種之二價的有機基為較佳,從導熱性更加優異的理由考慮,具有可以具有取代基的二價的芳香環基之二價的有機基為更佳。In the present invention, from the viewpoint of more excellent thermal conductivity of the thermally conductive material, it is preferable that both ends of L are carbon atoms. The terminal carbon atoms may also be part of a cyclic structure. In addition, in the present invention, from the viewpoint of more excellent thermal conductivity of the thermally conductive material, L in the above-mentioned general formula (P2) is a group selected from the group consisting of a divalent aromatic ring group which may have a substituent, a group which may have a substituent At least one divalent organic group selected from the group consisting of a divalent aliphatic cyclic group and an alkylene group which may have a branched chain having 2 or more carbon atoms is preferable, and from the viewpoint of more excellent thermal conductivity, a divalent organic group that may have The divalent organic group of the divalent aromatic ring group of the substituent is more preferable.

在通式(P2)中,r為0以上的整數。 r為0~20的整數為較佳,0~10的整數為更佳。In general formula (P2), r is an integer of 0 or more. r is preferably an integer of 0-20, more preferably an integer of 0-10.

在通式(P2)中,X1 ~X4 分別獨立地表示通式(P2b)所表示之基團。In the general formula (P2), X 1 to X 4 each independently represent a group represented by the general formula (P2b).

[化學式9]

Figure 02_image017
[Chemical formula 9]
Figure 02_image017

在上述通式(P2b)中,*表示與B1 ~B4 中的任1個的鍵結位置。In the above general formula (P2b), * represents a bonding position with any one of B 1 to B 4 .

在上述通式(P2b)中,D1 表示單鍵或二價的連結基。 作為上述二價的連結基,例如可以舉出-O-、-S-、-CO-、-NRN -、-SO2 -、伸烷基或包括該等組合之基團。-NRN -中之RN 表示氫原子或取代基。上述伸烷基為碳數1~8的直鏈狀或支鏈狀的伸烷基為較佳。 其中,D1 為“單鍵”或“由選自包括-O-、-CO-及伸烷基之群組中的組合形成之基團”為較佳,單鍵、*A -伸烷基-O-CO-*B 、*A -CO-O-伸烷基-*B 、*A -O-伸烷基-O-*B 、*A -CO-O-伸烷基-O-CO-*B 、*A -CO-O-伸烷基-O-*B 或*A -O-伸烷基-O-CO-*B 為更佳。 *A 為與A1 相反的一側的鍵結位置,*B 為與A1 的鍵結位置。In the above general formula (P2b), D 1 represents a single bond or a divalent linking group. Examples of the above-mentioned divalent linking group include -O-, -S-, -CO-, -NR N -, -SO 2 -, an alkylene group, and a group including a combination thereof. R N in -NR N- represents a hydrogen atom or a substituent. The above-mentioned alkylene group is preferably a linear or branched alkylene group having 1 to 8 carbon atoms. Wherein, D 1 is "single bond" or "a group formed by a combination selected from the group consisting of -O-, -CO- and alkylene" is preferably, single bond, * A -alkylene -O-CO-* B , * A -CO-O-alkylene-* B , * A -O-alkylene-O-* B , * A -CO-O-alkylene-O-CO -* B , * A -CO-O-alkylene-O-* B or * A -O-alkylene-O-CO-* B are more preferred. * A is the bonding position on the side opposite to A1, and * B is the bonding position with A1.

在上述通式(P2b)中,A1 表示可以具有取代基的芳香環基或可以具有取代基的脂肪族環基。 再者,A1 藉由構成上述芳香環基或上述脂肪族環基之原子與D1 、Y1 及Q鍵結。In the above general formula (P2b), A 1 represents an optionally substituted aromatic ring group or an optionally substituted aliphatic ring group. Furthermore, A 1 is bonded to D 1 , Y 1 and Q through the atom constituting the above-mentioned aromatic ring group or the above-mentioned aliphatic ring group.

作為A1 的一態樣之可以具有取代基的芳香環基可以為單環式芳香環基,亦可以為多環式芳香環基。 上述單環式芳香環基的員環數為5~10個為較佳。 構成上述多環式芳香環基之環的數量為2~4個為較佳,2個為更佳。構成上述多環式芳香環基之環的員環數分別獨立地為5~10個為較佳。 上述芳香環基可以為芳香族烴環基,亦可以為芳香族雜環基。 上述芳香族雜環基所具有之雜原子的數量為1~5個為較佳。作為雜原子,例如可以舉出氮原子、硫原子、氧原子、硒原子、碲原子、磷原子、矽原子及硼原子。其中,氮原子、硫原子或氧原子為較佳。 作為上述芳香環基,例如可以舉出苯環基、萘環基、蒽環基、苯并噻唑環基、咔唑環基及吲哚環基等。The aromatic ring group which may have a substituent as an aspect of A 1 may be a monocyclic aromatic ring group or a polycyclic aromatic ring group. The number of ring members of the monocyclic aromatic ring group is preferably 5 to 10. The number of rings constituting the polycyclic aromatic ring group is preferably 2 to 4, more preferably 2. Preferably, the number of ring members constituting the polycyclic aromatic ring group is independently 5 to 10. The above-mentioned aromatic ring group may be an aromatic hydrocarbon ring group or an aromatic heterocyclic group. It is preferable that the number of heteroatoms which the said aromatic heterocyclic group has is 1-5. As a hetero atom, a nitrogen atom, a sulfur atom, an oxygen atom, a selenium atom, a tellurium atom, a phosphorus atom, a silicon atom, and a boron atom are mentioned, for example. Among them, a nitrogen atom, a sulfur atom or an oxygen atom is preferable. As said aromatic ring group, a phenyl ring group, a naphthyl ring group, an anthracycline group, a benzothiazole ring group, a carbazole ring group, an indole ring group, etc. are mentioned, for example.

作為A1 的一態樣之可以具有取代基的脂肪族環基可以為單環,亦可以為多環。 上述單環的脂肪族環基的員環數為5~10個為較佳。 構成上述多環的脂肪族環基之環的數量為2~4個為較佳,2個為更佳。構成上述多環的環烷環基之環的員環數分別獨立地為5~10個為較佳。 上述脂肪族環基的作為環員原子之碳原子的數量為5個以上為較佳,6~12個為更佳。上述作為環員原子之碳原子的數量表示作為構成脂肪族環之環員原子之碳原子的數量。 作為上述脂肪族環基,例如可以舉出環己烷環基、環庚烷環基、降莰烷環基及金剛烷環基。The aliphatic ring group which may have a substituent as an aspect of A 1 may be a monocyclic ring or a polycyclic ring. The number of ring members of the monocyclic aliphatic ring group is preferably 5 to 10. The number of rings constituting the above-mentioned polycyclic aliphatic ring group is preferably 2 to 4, more preferably 2. The number of ring members constituting the above-mentioned polycyclic cycloalkyl ring group is preferably 5 to 10 each independently. The number of carbon atoms as ring member atoms in the aliphatic ring group is preferably 5 or more, more preferably 6 to 12. The above-mentioned number of carbon atoms as ring member atoms means the number of carbon atoms as ring member atoms constituting the aliphatic ring. As said aliphatic ring group, a cyclohexane ring group, a cycloheptane ring group, a norbornane ring group, and an adamantane ring group are mentioned, for example.

在上述通式(P2b)中,Q及Y1 分別獨立地表示選自包括羥基(-OH)、胺基、硫醇基(-SH)、羧酸基(-COOH)及異氰酸酯基(-NCO)之群組中的特定官能基。In the above general formula (P2b), Q and Y 1 each independently represent a group selected from the group consisting of hydroxyl (-OH), amine group, thiol group (-SH), carboxylic acid group (-COOH) and isocyanate group (-NCO) ) specific functional groups in the group.

作為上述特定官能基的胺基並無特別限定,可以為第一胺基、第二胺基及第三胺基中的任一種。例如,可以舉出-N(RE2 (RE 分別獨立地為氫原子或烷基(可以為直鏈狀亦可以為支鏈狀))。烷基中的碳數為1~10為較佳,1~6為更佳,1~3為進一步較佳。再者,烷基還可以具有取代基。The amine group as the above-mentioned specific functional group is not particularly limited, and may be any of the first amino group, the second amino group, and the third amino group. For example, -N(R E ) 2 (R E is each independently a hydrogen atom or an alkyl group (may be linear or branched)). The number of carbon atoms in the alkyl group is preferably 1 to 10, more preferably 1 to 6, and even more preferably 1 to 3. In addition, the alkyl group may have a substituent.

其中,特定官能基為羥基為較佳。 又,在作為特定官能基之羥基與芳香環基鍵結之情況下,在上述芳香環基上之與上述羥基相鄰之位置(鄰位)上存在取代基亦為較佳。將如此在鄰位上存在取代基之羥基亦稱為鄰位配位羥基。 再者,在芳香環基上之鄰位配位羥基的兩者上可以存在上述取代基之情況下,上述取代基可以存在於其中一者上,亦可以存在於兩者上。 存在於鄰位配位羥基的鄰位上之上述取代基為有機基為較佳,碳數1~6的取代基為更佳,碳數1~6的烷基為進一步較佳。上述烷基可以為直鏈狀,亦可以為支鏈狀。 作為可以存在複數個之特定官能基之羥基的一部分可以為鄰位配位羥基,亦可以全部為鄰位配位羥基。 在羥基的一部分或全部為鄰位配位羥基之情況下,在由組成物形成之半硬化膜的保存穩定性變得良好之觀點而言為較佳。Among them, the specific functional group is preferably a hydroxyl group. Moreover, when the hydroxyl group which is a specific functional group couple|bonds with an aromatic ring group, it is also preferable that a substituent exists in the position (ortho position) adjacent to the said hydroxyl group on the said aromatic ring group. A hydroxyl group having a substituent in such an ortho position is also referred to as an ortho-coordinated hydroxyl group. Furthermore, when the above-mentioned substituents may be present on both of the ortho-coordinated hydroxyl groups on the aromatic ring group, the above-mentioned substituents may be present on one of them or may be present on both of them. Preferably, the above-mentioned substituent present at the ortho position of the ortho-coordinated hydroxyl group is an organic group, more preferably a substituent having 1 to 6 carbon atoms, and even more preferably an alkyl group having 1 to 6 carbon atoms. The above-mentioned alkyl group may be linear or branched. A part of the hydroxyl groups which may be a plurality of specific functional groups may be ortho-coordinated hydroxyl groups, or all of them may be ortho-coordinated hydroxyl groups. When a part or all of the hydroxyl groups are ortho-coordinated hydroxyl groups, it is preferable from the viewpoint that the storage stability of the semi-cured film formed from the composition becomes favorable.

可以存在複數個之通式(P2b)所表示之基團分別獨立地具有至少1個羥基作為特定官能基為較佳,所有特定官能基為羥基為更佳。 在通式(P2)中的Q及Y1 所表示之所有特定官能基中,作為羥基之特定官能基的數量為1個以上為較佳,2~15個為更佳。It is preferable that the groups represented by the general formula (P2b) which may exist in a plurality each independently have at least one hydroxyl group as the specific functional group, and it is more preferable that all the specific functional groups are hydroxyl groups. Among all the specific functional groups represented by Q and Y 1 in the general formula (P2), the number of specific functional groups as hydroxyl groups is preferably 1 or more, more preferably 2 to 15.

在上述通式(P2b)中,p表示0以上的整數。 其中,p為0~5為較佳,0~1為更佳。 在p為0之情況下,Y1 與B1 ~B4 中的任1個直接鍵結。亦即,X1 ~X4 可以為特定官能基其本身。In the above general formula (P2b), p represents an integer of 0 or more. Among them, p is preferably 0-5, more preferably 0-1. When p is 0, Y 1 is directly bonded to any one of B 1 to B 4 . That is, X 1 to X 4 may be the specific functional group itself.

在上述通式(P2b)中,q表示0~2的整數。 其中,q為0~1為較佳。In the above general formula (P2b), q represents an integer of 0 to 2. Among them, q is preferably 0 to 1.

通式(P2)所表示之化合物可以單獨具有一種通式(P2b)所表示之基團,亦可以具有兩種以上。 其中,通式(P2)所表示之化合物為“僅具有羥基作為特定官能基之化合物”為較佳。The compound represented by the general formula (P2) may have one type of group represented by the general formula (P2b) alone, or may have two or more types. Among them, the compound represented by the general formula (P2) is preferably "a compound having only a hydroxyl group as a specific functional group".

除此以外,作為含活性氫基的化合物,例如苯三酚等苯多元醇、聯苯芳烷基型酚樹脂、酚酚醛清漆樹脂、甲酚酚醛清漆樹脂、芳香族烴甲醛樹脂改質酚樹脂、二環戊二烯酚加成型樹脂、酚芳烷基樹脂、由多價羥基化合物和甲醛合成之多價酚酚醛清漆樹脂、萘酚芳烷基樹脂、三羥甲基甲烷樹脂、四苯酚基乙烷樹脂、萘酚酚醛清漆樹脂、萘酚酚共縮酚醛清漆樹脂、萘酚甲酚共縮酚醛清漆樹脂、聯苯改質酚樹脂、聯苯改質萘酚樹脂、胺基三𠯤改質酚樹脂或含有烷氧基的芳香環改質酚醛清漆樹脂等亦為較佳。In addition, as the active hydrogen group-containing compound, for example, benzene polyols such as pyrogallol, biphenyl aralkyl type phenol resin, phenol novolak resin, cresol novolak resin, aromatic hydrocarbon formaldehyde resin modified phenol resin , Dicyclopentadienyl phenol addition resin, phenol aralkyl resin, polyvalent phenol novolac resin synthesized from polyvalent hydroxy compound and formaldehyde, naphthol aralkyl resin, trimethylolmethane resin, tetraphenol based Ethane Resin, Naphthol Novolac Resin, Naphthol Phenol Co-Novolac Resin, Naphthol-Cresol Co-Novolac Resin, Biphenyl Modified Phenol Resin, Biphenyl Modified Naphthol Resin, Amino Tris Modified Phenol resins or alkoxy-containing aromatic ring-modified novolak resins are also preferred.

含活性氫基的化合物的羥基含量的下限值為3.0mmol/g以上為較佳,4.0mmol/g以上為更佳。上限值為25.0mmol/g以下為較佳,20.0mmol/g以下為更佳。 再者,上述羥基含量表示含活性氫基的化合物1g所具有之羥基(較佳為酚性羥基)的數量。 又,含活性氫基的化合物除了羥基以外亦可以具有能夠與環氧化合物進行聚合反應之含有活性氫的基團(羧酸基等)。含活性氫基的化合物中的活性氫的含量(羥基及羧酸基等中之氫原子的合計含量)的下限值為3.0mmol/g以上為較佳,4.0mmol/g以上為更佳。上限值為25.0mmol/g以下為較佳,20.0mmol/g以下為更佳。 再者,上述活性氫的含量表示含活性氫基的化合物1g所具有之活性氫原子的數量。The lower limit value of the hydroxyl group content of the active hydrogen group-containing compound is preferably 3.0 mmol/g or more, and more preferably 4.0 mmol/g or more. The upper limit is preferably 25.0 mmol/g or less, more preferably 20.0 mmol/g or less. In addition, the said hydroxyl group content shows the number of the hydroxyl group (preferably a phenolic hydroxyl group) which the active hydrogen group containing compound 1g has. In addition, the active hydrogen group-containing compound may have an active hydrogen-containing group (a carboxylic acid group, etc.) which can be polymerized with an epoxy compound in addition to a hydroxyl group. The lower limit of the content of active hydrogen in the active hydrogen group-containing compound (total content of hydrogen atoms in hydroxyl groups, carboxylic acid groups, etc.) is preferably 3.0 mmol/g or more, more preferably 4.0 mmol/g or more. The upper limit is preferably 25.0 mmol/g or less, more preferably 20.0 mmol/g or less. In addition, the content of the above-mentioned active hydrogen means the number of active hydrogen atoms contained in 1 g of the active hydrogen group-containing compound.

含活性氫基的化合物的分子量的上限值為2000以下為較佳,1500以下為更佳,1000以下為進一步較佳。下限值為110以上為較佳,300以上為更佳。The upper limit of the molecular weight of the active hydrogen group-containing compound is preferably 2,000 or less, more preferably 1,500 or less, and even more preferably 1,000 or less. The lower limit is preferably 110 or more, and more preferably 300 or more.

在組成物包括含活性氫基的化合物之情況下,其含量相對於組成物的總固體成分為1~40質量%為較佳,3~30質量%為更佳,5~20質量%為進一步較佳。 含活性氫基的化合物可以單獨使用一種,亦可以使用兩種以上。When the composition includes the active hydrogen group-containing compound, its content is preferably 1 to 40% by mass, more preferably 3 to 30% by mass, and further preferably 5 to 20% by mass relative to the total solid content of the composition. better. The active hydrogen group-containing compound may be used alone, or two or more kinds may be used.

在組成物包含環氧化合物和含活性氫基的化合物之情況下,環氧化合物的含量與含活性氫基的化合物的含量之比為環氧化合物的環氧基與含活性氫基的化合物中的活性氫基(較佳為羥基,更佳為酚性羥基)的當量比(“環氧基的數量”/“活性氫基的數量”)成為30/70~70/30之量為較佳,成為40/60~60/40之量為更佳,成為45/55~55/45之量為進一步較佳。 在組成物包含環氧化合物和/或含活性氫基的化合物之情況下,環氧化合物與含活性氫基的化合物的合計含量相對於總黏合劑成分為20~100質量%為較佳,60~100質量%為更佳,90~100質量%為進一步較佳。When the composition contains an epoxy compound and an active hydrogen group-containing compound, the ratio of the content of the epoxy compound to the content of the active hydrogen group-containing compound is the ratio of the epoxy group of the epoxy compound to the active hydrogen group-containing compound The equivalent ratio ("number of epoxy groups"/"number of active hydrogen groups") of active hydrogen groups (preferably hydroxyl groups, more preferably phenolic hydroxyl groups) is 30/70 to 70/30. , the amount of 40/60 to 60/40 is more preferable, and the amount of 45/55 to 55/45 is more preferable. When the composition contains an epoxy compound and/or an active hydrogen group-containing compound, the total content of the epoxy compound and the active hydrogen group-containing compound is preferably 20 to 100 mass % with respect to the total binder components, and 60 -100 mass % is more preferable, and 90-100 mass % is more preferable.

在組成物中,黏合劑成分的含量相對於組成物的總固體成分為5~90質量%為較佳,10~50質量%為更佳,15~40質量%為進一步較佳。In the composition, the content of the binder component is preferably 5 to 90% by mass, more preferably 10 to 50% by mass, and even more preferably 15 to 40% by mass relative to the total solid content of the composition.

〔無機物〕 組成物還可以包含無機物。 上述無機物為除了上述改質氮化硼粒子以外的成分。除了藉由本發明的方法所製造之改質氮化硼粒子及本發明的改質氮化硼粒子以外,即使為被改質之氮化硼亦包含於上述無機物中。 作為無機物,例如可以使用自先前一直用作導熱材料的無機填充劑之任一種無機物。從導熱材料的導熱性及絕緣性更加優異之觀點考慮,無機物包含無機氮化物或無機氧化物為較佳,包含無機氮化物為更佳。[inorganic] The composition may also contain inorganic substances. The said inorganic substance is a component other than the said modified boron nitride particle. In addition to the modified boron nitride particles produced by the method of the present invention and the modified boron nitride particles of the present invention, even the modified boron nitride is included in the above-mentioned inorganic substances. As the inorganic substance, for example, any inorganic substance which has been conventionally used as a thermally conductive material as an inorganic filler can be used. From the viewpoint of more excellent thermal conductivity and insulating properties of the thermally conductive material, it is preferable that the inorganic substance contains an inorganic nitride or an inorganic oxide, and it is more preferable that it contains an inorganic nitride.

無機物的形狀並無特別限制,亦可以為粒子狀,亦可以為薄膜狀,或亦可以為板狀。粒子狀無機物的形狀可以舉出米粒狀、球形狀、立方體狀、紡錘形狀、鱗片狀、凝聚狀及不規則形狀。The shape of the inorganic substance is not particularly limited, and may be in a particle shape, a film shape, or a plate shape. The shape of the particulate inorganic substance includes a rice grain shape, a spherical shape, a cube shape, a spindle shape, a scale shape, an aggregated shape, and an irregular shape.

作為無機氧化物,例如可以舉出氧化鋯(ZrO2 )、氧化鈦(TiO2 )、氧化矽(SiO2 )、氧化鋁(Al2 O3 )、氧化鐵(Fe2 O3 、FeO、Fe3 O4 )、氧化銅(CuO、Cu2 O)、氧化鋅(ZnO)、氧化釔(Y2 O3 )、氧化鈮(Nb2 O5 )、氧化鉬(MoO3 )、氧化銦(In2 O3 、In2 O)、氧化錫(SnO2 )、氧化鉭(Ta2 O5 )、氧化鎢(WO3 、W2 O5 )、氧化鉛(PbO、PbO2 )、氧化鉍(Bi2 O3 )、氧化鈰(CeO2 、Ce2 O3 )、氧化銻(Sb2 O3 、Sb2 O5 )、氧化鍺(GeO2 、GeO)、氧化鑭(La2 O3 )及氧化釕(RuO2 )等。 上述無機氧化物可以僅使用一種,亦可以使用兩種以上。 無機氧化物為氧化鈦、氧化鋁或氧化鋅為較佳,氧化鋁為更佳。 無機氧化物亦可以為作為非氧化物所準備之金屬在環境下等氧化而產生之氧化物。Examples of inorganic oxides include zirconium oxide (ZrO 2 ), titanium oxide (TiO 2 ), silicon oxide (SiO 2 ), aluminum oxide (Al 2 O 3 ), iron oxide (Fe 2 O 3 , FeO, Fe 3 O 4 ), copper oxide (CuO, Cu 2 O), zinc oxide (ZnO), yttrium oxide (Y 2 O 3 ), niobium oxide (Nb 2 O 5 ), molybdenum oxide (MoO 3 ), indium oxide (In 2 O 3 , In 2 O), tin oxide (SnO 2 ), tantalum oxide (Ta 2 O 5 ), tungsten oxide (WO 3 , W 2 O 5 ), lead oxide (PbO, PbO 2 ), bismuth oxide (Bi 2 O 3 ), cerium oxide (CeO 2 , Ce 2 O 3 ), antimony oxide (Sb 2 O 3 , Sb 2 O 5 ), germanium oxide (GeO 2 , GeO), lanthanum oxide (La 2 O 3 ) and oxides Ruthenium (RuO 2 ), etc. Only one type of the above-mentioned inorganic oxides may be used, or two or more types may be used. The inorganic oxide is preferably titanium oxide, aluminum oxide or zinc oxide, more preferably aluminum oxide. The inorganic oxide may also be an oxide produced by oxidizing a metal prepared as a non-oxide in the environment, etc.

作為無機氮化物,例如可以舉出氮化硼(BN)、氮化碳(C3 N4 )、氮化矽(Si3 N4 )、氮化鎵(GaN)、氮化銦(InN)、氮化鋁(AlN)、氮化鉻(Cr2 N)、氮化銅(Cu3 N)、氮化鐵(Fe4 N)、氮化鐵(Fe3 N)、氮化鑭(LaN)、氮化鋰(Li3 N)、氮化鎂(Mg3 N2 )、氮化鉬(Mo2 N)、氮化鈮(NbN)、氮化鉭(TaN)、氮化鈦(TiN)、氮化鎢(W2 N)、氮化鎢(WN2 )、氮化釔(YN)及氮化鋯(ZrN)等。 無機氮化物包含鋁原子、硼原子或矽原子為較佳,包含氮化鋁、氮化硼或氮化矽為更佳,包含氮化鋁或氮化硼為進一步較佳,包含氮化硼為特佳。 上述無機氮化物可以僅使用一種,亦可以使用兩種以上。Examples of inorganic nitrides include boron nitride (BN), carbon nitride (C 3 N 4 ), silicon nitride (Si 3 N 4 ), gallium nitride (GaN), indium nitride (InN), Aluminum Nitride (AlN), Chromium Nitride (Cr 2 N), Copper Nitride (Cu 3 N), Iron Nitride (Fe 4 N), Iron Nitride (Fe 3 N), Lanthanum Nitride (LaN), Lithium Nitride (Li 3 N), Magnesium Nitride (Mg 3 N 2 ), Molybdenum Nitride (Mo 2 N), Niobium Nitride (NbN), Tantalum Nitride (TaN), Titanium Nitride (TiN), Nitrogen Tungsten nitride (W 2 N), tungsten nitride (WN 2 ), yttrium nitride (YN) and zirconium nitride (ZrN), etc. The inorganic nitride preferably contains aluminum atom, boron atom or silicon atom, more preferably contains aluminum nitride, boron nitride or silicon nitride, more preferably contains aluminum nitride or boron nitride, and contains boron nitride as Excellent. Only one kind of the above-mentioned inorganic nitrides may be used, or two or more kinds thereof may be used.

無機物的大小並無特別限制,但是在無機物的分散性更加優異之觀點而言,無機物的平均粒徑為500μm以下為較佳,300μm以下為更佳,200μm以下為進一步較佳。下限並無特別限制,但是在處理性之觀點而言,10nm以上為較佳,100nm以上為更佳。 在使用市售品之情況下,無機物的平均粒徑採用目錄值。在沒有目錄值之情況下,關於上述平均粒徑,利用電子顯微鏡隨機選擇100個無機物,分別測量無機物的粒徑(長徑),並對它們進行算術平均來求出。The size of the inorganic substance is not particularly limited, but from the viewpoint of more excellent dispersibility of the inorganic substance, the average particle diameter of the inorganic substance is preferably 500 μm or less, more preferably 300 μm or less, and even more preferably 200 μm or less. The lower limit is not particularly limited, but from the viewpoint of handleability, 10 nm or more is preferable, and 100 nm or more is more preferable. When using a commercial item, the average particle diameter of an inorganic substance adopts a catalog value. When there is no catalog value, the average particle diameter is determined by randomly selecting 100 inorganic substances with an electron microscope, measuring the particle diameters (major diameters) of the inorganic substances, and arithmetically averaging them.

在組成物包含無機物之情況下,其含量相對於組成物的總固體成分為0.5~60質量%為較佳,1~50質量%為更佳,2~40質量%為進一步較佳。 無機物可以僅使用一種,亦可以使用兩種以上。 再者,無機物可以與表面修飾劑共同形成表面修飾無機物。作為表面修飾劑,例如能夠使用本發明的方法的說明中所舉出之表面修飾劑。When the composition contains an inorganic substance, its content is preferably 0.5 to 60% by mass, more preferably 1 to 50% by mass, and even more preferably 2 to 40% by mass relative to the total solid content of the composition. Only one kind of inorganic substances may be used, or two or more kinds may be used. Furthermore, the inorganic substance may form a surface-modified inorganic substance together with the surface modifier. As the surface modifier, for example, the surface modifiers listed in the description of the method of the present invention can be used.

將上述改質氮化硼粒子(藉由本發明的方法所製造之改質氮化硼粒子及本發明的改質氮化硼粒子)以及上述無機物亦統稱為無機成分。 在組成物中,無機成分的含量相對於組成物的總固體成分為40~95質量%為較佳,50~95質量%為更佳,60~95質量%為進一步較佳。 上述改質氮化硼粒子的含量相對於無機成分的總質量為10~100質量%為較佳,25~100質量%為更佳,50~100質量%為進一步較佳。The above-mentioned modified boron nitride particles (the modified boron nitride particles produced by the method of the present invention and the modified boron nitride particles of the present invention) and the above-mentioned inorganic substances are also collectively referred to as inorganic components. In the composition, the content of the inorganic component is preferably 40 to 95% by mass, more preferably 50 to 95% by mass, and even more preferably 60 to 95% by mass relative to the total solid content of the composition. The content of the modified boron nitride particles is preferably 10 to 100 mass %, more preferably 25 to 100 mass %, and even more preferably 50 to 100 mass % with respect to the total mass of the inorganic components.

〔硬化促進劑〕 組成物還可以包含硬化促進劑。 尤其,在組成物包含樹脂黏合劑的前驅物之情況下,包含用於由樹脂黏合劑的前驅物形成樹脂黏合劑的硬化促進劑為較佳。 關於所使用之硬化促進劑的種類,只要考慮樹脂黏合劑的前驅物的種類等而適當確定即可。其中,在上述樹脂黏合劑或其前驅物包含環氧化合物之情況下,組成物還包含硬化促進劑為較佳。 作為硬化促進劑,例如可以舉出三鄰三膦、三苯基膦、三氟化硼胺錯合物及日本特開2012-067225號公報的0052段中所記載的化合物。 又,亦可以舉出如四苯基鏻四苯基硼酸鹽(TPP-K)、四苯基鏻四-對三硼酸鹽(TPP-MK)、四-正丁基鏻月桂酸鹽(TBP-LA)、雙(四-正丁基鏻)鄰苯四甲酸酯及四苯基鏻的雙(萘-2,3-二氧基)苯基矽酸鹽加成物的四級鏻系化合物(鏻鹽)等鎓鹽系硬化促進劑。 除此以外,可以舉出2-甲基咪唑(產品名稱;2MZ)、2-十一烷基咪唑(產品名稱;C11-Z)、2-十七烷基咪唑(產品名稱;C17Z)、1,2-二甲基咪唑(產品名稱;1.2DMZ)、2-乙基-4-甲基咪唑(產品名稱;2E4MZ)、2-苯基咪唑(產品名稱;2PZ)、2-苯基-4-甲基咪唑(產品名稱;2P4MZ)、1-苯甲基-2-甲基咪唑(產品名稱;1B2MZ)、1-苯甲基-2-苯基咪唑(產品名稱;1B2PZ)、1-氰基乙基-2-甲基咪唑(產品名稱;2MZ-CN)、1-氰基乙基-2-十一烷基咪唑(產品名稱;C11Z-CN)、1-氰基乙基-2-苯基咪唑偏苯三酸(產品名稱;2PZCNS-PW)、2,4-二胺基-6-[2’-甲基咪唑-(1’)]-乙基-s-三𠯤(產品名稱;2MZ-A)、2,4-二胺基-6-[2’-十一烷基咪唑-(1’)]-乙基-s-三𠯤(產品名稱;C11Z-A)、2,4-二胺基-6-[2’-乙基-4’-甲基咪唑-(1’)]-乙基-s-三𠯤(產品名稱;2E4MZ-A)、2,4-二胺基-6-[2’-甲基咪唑-(1’)]-乙基-s-三𠯤異三聚氰酸加成物(產品名稱;2MA-OK)、2-苯基-4,5-二羥基甲基咪唑(產品名稱;2PHZ-PW)、2-苯基-4-甲基-5-羥基甲基咪唑(產品名稱;2P4MHZ-PW)、1-氰基乙基-2-苯基咪唑(產品名稱;2PZ-CN)、2,4-二胺基-6-[2’-甲基咪唑基-(1’)]-乙基-均三𠯤(產品名稱;2MZA-PW)及2,4-二胺基-6-[2’-甲基咪唑基-(1’)]-乙基-均三𠯤異三聚氰酸加成物(產品名稱;2MAOK-PW)等咪唑系硬化促進劑等(均為SHIKOKU CHEMICALS CORPORATION製)。進而,作為三芳基膦系的硬化促進劑,亦可以舉出日本特開2004-043405號公報的0052段中所記載的化合物。作為將三苯硼烷添加到三芳基膦而成之磷系硬化促進劑,亦可以舉出日本特開2014-005382號公報的0024段中所記載的化合物。 其中,在所獲得之導熱材料的剝離強度更加優異之觀點而言,硬化促進劑包括包含磷原子之化合物為較佳,包含鏻鹽為更佳。 該理由雖尚不明確,但是推測為如下:包含磷原子之化合物(尤其鏻鹽)使硬化緩慢地進行,因此在從開始組成物的硬化起至完全硬化為止的期間有足夠時間使樹脂黏合劑或其前驅物能夠流動,提高與基板界面和/或氮化硼界面的密接性,從而提高剝離強度。 硬化促進劑亦可以為包含磷原子之化合物或鏻鹽其本身。包含磷原子之化合物或鏻鹽的含量相對於硬化促進劑的總質量為10~100質量%為較佳,50~100質量%為更佳,80~100質量%為進一步較佳。 硬化促進劑可以單獨使用一種,亦可以使用兩種以上。 硬化促進劑的含量相對於組成物的總固體成分為0.002質量%以上為較佳,0.02質量%以上為更佳,0.07質量%以上為進一步較佳。硬化促進劑的含量相對於組成物的總固體成分為5質量%以下為較佳,2質量%以下為更佳,1質量%以下為進一步較佳。 例如,在組成物包含環氧化合物之情況下,硬化促進劑的含量相對於環氧化合物的總量為0.01~10質量%為較佳,0.10~5質量%為更佳。[hardening accelerator] The composition may also contain a hardening accelerator. In particular, in the case where the composition contains the precursor of the resin adhesive, it is preferable to contain a hardening accelerator for forming the resin adhesive from the precursor of the resin adhesive. The type of the curing accelerator to be used may be appropriately determined in consideration of the type of the precursor of the resin binder and the like. Among them, when the above-mentioned resin binder or its precursor contains an epoxy compound, it is preferable that the composition further contains a hardening accelerator. Examples of the curing accelerator include tri-o-triphosphine, triphenylphosphine, boron trifluoride amine complexes, and compounds described in paragraph 0052 of JP-A No. 2012-067225. In addition, tetraphenylphosphonium tetraphenyl borate (TPP-K), tetraphenylphosphonium tetra-p-triborate (TPP-MK), tetra-n-butylphosphonium laurate (TBP- LA), quaternary phosphonium compounds of bis(tetra-n-butylphosphonium) phthalate and bis(naphthalene-2,3-dioxy)phenylsilicate adducts of tetraphenylphosphonium (phosphonium salt) and other onium salt-based hardening accelerators. In addition, 2-methylimidazole (product name; 2MZ), 2-undecylimidazole (product name; C11-Z), 2-heptadecylimidazole (product name; C17Z), 1 ,2-Dimethylimidazole (product name; 1.2DMZ), 2-ethyl-4-methylimidazole (product name; 2E4MZ), 2-phenylimidazole (product name; 2PZ), 2-phenyl-4 -Methylimidazole (product name; 2P4MZ), 1-benzyl-2-methylimidazole (product name; 1B2MZ), 1-benzyl-2-phenylimidazole (product name; 1B2PZ), 1-cyano ethyl-2-methylimidazole (product name; 2MZ-CN), 1-cyanoethyl-2-undecylimidazole (product name; C11Z-CN), 1-cyanoethyl-2- Phenylimidazole trimellitic acid (product name; 2PZCNS-PW), 2,4-diamino-6-[2'-methylimidazole-(1')]-ethyl-s-tris(product name) ; 2MZ-A), 2,4-diamino-6-[2'-undecylimidazole-(1')]-ethyl-s-tris(product name; C11Z-A), 2, 4-Diamino-6-[2'-ethyl-4'-methylimidazole-(1')]-ethyl-s-tris(product name; 2E4MZ-A), 2,4-diamine Alkyl-6-[2'-methylimidazole-(1')]-ethyl-s-tricyanuric acid adduct (product name; 2MA-OK), 2-phenyl-4,5 -Dihydroxymethylimidazole (product name; 2PHZ-PW), 2-phenyl-4-methyl-5-hydroxymethylimidazole (product name; 2P4MHZ-PW), 1-cyanoethyl-2-benzene Imidazole (product name; 2PZ-CN), 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-mesatris (product name; 2MZA-PW) and 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-mesocyanuric acid adduct (product name; 2MAOK-PW) and other imidazoles Hardening accelerators, etc. (all manufactured by SHIKOKU CHEMICALS CORPORATION). Furthermore, as a hardening accelerator of a triarylphosphine type, the compound described in the 0052 paragraph of Unexamined-Japanese-Patent No. 2004-043405 is also mentioned. As the phosphorus-based curing accelerator obtained by adding triphenylborane to triarylphosphine, the compounds described in paragraph 0024 of JP-A-2014-005382 can also be used. Among them, from the viewpoint of further excellent peel strength of the thermally conductive material obtained, it is preferable that the hardening accelerator contains a compound containing a phosphorus atom, and it is more preferable that it contains a phosphonium salt. Although the reason for this is not clear, it is presumed as follows: the compound (especially phosphonium salt) containing phosphorus atoms causes the curing to proceed slowly, so that there is sufficient time for the resin binder from the start of the curing of the composition to the complete curing. Its precursor can flow, and the adhesion with the substrate interface and/or the boron nitride interface can be improved, thereby improving the peel strength. The hardening accelerator may also be a compound containing a phosphorus atom or a phosphonium salt itself. The content of the phosphorus atom-containing compound or phosphonium salt is preferably 10 to 100 mass %, more preferably 50 to 100 mass %, and even more preferably 80 to 100 mass % with respect to the total mass of the hardening accelerator. A hardening accelerator may be used individually by 1 type, and may use 2 or more types. The content of the hardening accelerator is preferably 0.002 mass % or more, more preferably 0.02 mass % or more, and even more preferably 0.07 mass % or more with respect to the total solid content of the composition. The content of the hardening accelerator is preferably 5 mass % or less, more preferably 2 mass % or less, and even more preferably 1 mass % or less with respect to the total solid content of the composition. For example, when the composition contains an epoxy compound, the content of the curing accelerator is preferably 0.01 to 10% by mass, more preferably 0.10 to 5% by mass, based on the total amount of the epoxy compound.

〔溶劑〕 組成物還可以包含溶劑。 溶劑的種類並無特別限制,有機溶劑為較佳。作為有機溶劑,例如可以舉出環戊酮、環己酮、乙酸乙酯、甲基乙基酮、二氯甲烷及四氫呋喃等。 在組成物包含溶劑之情況下,溶劑的含量為使組成物的固體成分濃度成為20~95質量%之量為較佳,成為30~85質量%之量為更佳,成為50~80質量%之量為進一步較佳。 亦即,溶劑的含量相對於組成物的總質量為5~80質量%為較佳,15~70質量%為更佳,20~50質量%為進一步較佳。[Solvent] The composition may also contain a solvent. The type of the solvent is not particularly limited, and an organic solvent is preferred. As an organic solvent, cyclopentanone, cyclohexanone, ethyl acetate, methyl ethyl ketone, dichloromethane, tetrahydrofuran, etc. are mentioned, for example. When the composition contains a solvent, the content of the solvent is preferably an amount such that the solid content concentration of the composition is 20 to 95% by mass, more preferably 30 to 85% by mass, and more preferably 50 to 80% by mass The amount is further preferred. That is, the content of the solvent is preferably 5 to 80% by mass, more preferably 15 to 70% by mass, and even more preferably 20 to 50% by mass relative to the total mass of the composition.

〔其他成分〕 組成物可以包含除了上述以外的其他成分。 作為其他成分,例如可以舉出分散劑、表面修飾劑及聚合起始劑(光聚合起始劑或熱聚合起始劑等)。[Other ingredients] The composition may contain other components than the above. As other components, a dispersing agent, a surface modifier, and a polymerization initiator (a photopolymerization initiator, a thermal polymerization initiator, etc.) are mentioned, for example.

〔組成物的製造方法〕 組成物的製造方法並無特別限制,能夠採用公知的方法,例如能夠將上述各種成分進行混合來製造。在進行混合時,可以一次性混合各種成分,亦可以依序混合。 將成分進行混合之方法並無特別限制,能夠使用公知的方法。用於混合之混合裝置為液體分散機為較佳,例如可以舉出自轉公轉混合機、高速旋轉剪切型攪拌機等攪拌機、膠磨機、輥磨機、高壓噴射式分散機、超音波分散機、珠磨機及均質機。混合裝置可以單獨使用一種,亦可以使用兩種以上。可以在進行混合的前後和/或同時進行脫氣處理。[Manufacturing method of composition] The manufacturing method of a composition is not specifically limited, A well-known method can be employ|adopted, for example, it can manufacture by mixing the above-mentioned various components. When mixing, various components may be mixed at once, or may be mixed sequentially. There is no restriction|limiting in particular in the method of mixing a component, A well-known method can be used. The mixing device used for mixing is preferably a liquid disperser, for example, mixers such as a rotary revolution mixer, a high-speed rotary shear mixer, a rubber mill, a roller mill, a high-pressure jet disperser, and an ultrasonic disperser. , bead mill and homogenizer. One type of mixing device may be used alone, or two or more types may be used. Degassing can be performed before and/or simultaneously with mixing.

〔組成物的硬化方法〕 本發明的組成物為導熱材料形成用組成物為較佳。 對本發明的組成物進行硬化處理而獲得導熱材料。 組成物的硬化方法並無特別限制,但是熱硬化反應為較佳。 進行熱硬化反應時的加熱溫度並無特別限制。例如,只要在50~250℃的範圍內適當選擇即可。又,在進行熱硬化反應時,可以實施複數個次溫度不同之加熱處理。 硬化處理對為薄膜狀或片狀之組成物進行為較佳。具體而言,例如只要將組成物塗佈成膜之後進行硬化反應即可。 在進行硬化處理時,在基材上塗佈組成物而形成塗膜之後使其硬化為較佳。此時,亦可以使不同之基團材與在基材上所形成之塗膜進一步接觸之後進行硬化處理。硬化後所獲得之硬化物(導熱材料)可以與基材的一側或兩側分離,亦可以不分離。 又,在進行硬化處理時,可以以在單獨的基材上塗佈組成物而分別形成塗膜並使所獲得之塗膜彼此接觸之狀態進行硬化處理。硬化後所獲得之硬化物(導熱材料)可以與基材的一側或兩側分離,亦可以不分離。[Method of hardening the composition] The composition of the present invention is preferably a composition for forming a thermally conductive material. The composition of the present invention is hardened to obtain a thermally conductive material. The hardening method of the composition is not particularly limited, but a thermal hardening reaction is preferable. The heating temperature when the thermosetting reaction is performed is not particularly limited. For example, what is necessary is just to select suitably within the range of 50-250 degreeC. In addition, when the thermosetting reaction is performed, a plurality of times of heat treatment with different temperatures may be performed. The hardening treatment is preferably performed for the composition in the form of a film or a sheet. Specifically, for example, after the composition is applied to form a film, a curing reaction may be performed. When performing a hardening process, it is preferable to apply|coat a composition on a base material to form a coating film, and to harden it. At this time, the hardening treatment may be performed after further contacting different base materials with the coating film formed on the base material. The hardened product (thermally conductive material) obtained after hardening may or may not be separated from one or both sides of the substrate. Moreover, when performing a hardening process, you may perform a hardening process in the state which apply|coats a composition to a separate base material, forms a coating film, and the obtained coating film is mutually contact|connected. The hardened product (thermally conductive material) obtained after hardening may or may not be separated from one or both sides of the substrate.

硬化處理可以在將組成物形成為半硬化狀態之時點結束。又,可以在將組成物形成為半硬化狀態之後,進一步實施硬化處理以完成硬化。 可以將用於將組成物形成為半硬化狀態的硬化處理(亦稱為“半硬化處理”)和用於完成硬化的硬化處理(亦稱為“主硬化處理”)分為單獨的步驟來進行。The hardening treatment may be terminated when the composition is formed into a semi-hardened state. In addition, after forming the composition into a semi-hardened state, a hardening treatment may be further performed to complete hardening. The hardening treatment for forming the composition into a semi-hardened state (also referred to as "semi-hardening treatment") and the hardening treatment for completing the hardening (also referred to as "main hardening treatment") can be performed as separate steps. .

例如,在半硬化處理中,可以在基材上塗佈組成物以形成塗膜之後,直接在無加壓的情況下對基材上的塗膜進行加熱等以獲得半硬化狀態的導熱材料(亦稱為“半硬化膜”),亦可以一邊同時使用加壓加工一邊對基材上的塗膜進行加熱等以獲得半硬化膜。在進行加壓加工之情況下,加壓加工可以在上述加熱等的前後實施,亦可以在上述加熱等的期間實施。若在半硬化處理中實施加壓加工,則有時容易調整所獲得之半硬化膜的膜厚和/或減少半硬化膜中的空隙量。 在半硬化處理中,可以在使形成於單獨的基材上之塗膜彼此積層之狀態下進行半硬化處理,亦可以在不使塗膜彼此積層之狀態下進行半硬化處理。半硬化處理亦可以在使由組成物形成之塗膜進一步與除了上述塗膜以外的材料接觸之狀態下實施。For example, in the semi-hardening process, after coating the composition on the substrate to form a coating film, the coating film on the substrate can be directly heated without pressure to obtain a semi-hardened thermally conductive material ( Also referred to as a "semi-cured film"), a semi-cured film can also be obtained by heating the coating film on the base material while simultaneously using press processing. In the case of performing press working, the press working may be performed before and after the above-mentioned heating or the like, or may be performed during the above-mentioned heating or the like. When press working is performed in the semi-cured treatment, it may be easy to adjust the film thickness of the semi-cured film obtained and/or reduce the amount of voids in the semi-cured film. In the semi-curing treatment, the semi-curing treatment may be performed in a state where the coating films formed on the separate substrates are laminated, or the semi-curing treatment may be performed in a state where the coating films are not laminated. The semi-hardening treatment may be carried out in a state where the coating film formed from the composition is further brought into contact with materials other than the above coating film.

可以將所獲得之半硬化膜直接用作導熱材料,亦可以用作在對半硬化膜進一步實施主硬化處理之後完全硬化之導熱材料。 在主硬化處理中,可以直接在無加壓的情況下對半硬化膜進行加熱等,亦可以在進行加壓加工之後或一邊進行加壓加工一邊進行加熱等。此時,在主硬化處理中,可以在使單獨的半硬化膜彼此積層之狀態下進行主硬化處理,亦可以在不使半硬化膜彼此積層之狀態下進行主硬化處理。 又,主硬化處理可以在將半硬化膜配置成與所使用之元件等接觸之狀態下實施。藉由主硬化處理,使元件與本發明的導熱材料接著亦為較佳。The obtained semi-cured film can be used as a thermally conductive material as it is, or can be used as a thermally conductive material which is completely cured after further main curing treatment is performed on the semi-cured film. In the main curing treatment, the semi-cured film may be directly heated without pressurization, or the like may be heated after pressurization or while pressurization is performed. At this time, in the main hardening process, you may perform a main hardening process in the state which laminated|stacked individual semi-hardened films, and you may perform a main hardening process in the state which does not laminate|stack semi-hardened films. Moreover, the main hardening process can be implemented in the state which arrange|positions a semi-cured film in contact with the element etc. to be used. It is also preferred that the element and the thermally conductive material of the present invention be followed by a main hardening process.

用於可以在進行半硬化處理和/或主硬化處理等中之硬化處理時實施的加壓加工中之加壓並無限制,例如可以使用平板加壓,亦可以使用輥壓。 在使用輥壓之情況下,例如以2根輥相對之一對輥夾住在基材上形成塗膜而獲得之附塗膜的基材,一邊旋轉上述一對輥並使上述附塗膜基材通過,一邊向上述附塗膜的基材的膜厚方向施加壓力為較佳。關於上述附塗膜的基材,可以僅在塗膜的一表面上存在基材,亦可以在塗膜的2個表面上存在基材。上述附塗膜的基材在輥壓中可以僅通過一次,亦可以通過複數個次。 在進行半硬化處理和/或主硬化處理等中之硬化處理時,基於平板沖壓之處理和基於輥壓之處理可以僅實施一者,亦可以實施兩者。There is no limitation on the pressing used in the press working that can be performed in the semi-hardening process and/or the hardening process in the main hardening process, and for example, a flat plate pressing can be used, or a roll pressing can be used. In the case of using roll pressing, for example, a base material with a coating film obtained by forming a coating film on a base material by sandwiching a pair of rolls facing each other, and rotating the pair of rolls to make the base material with a coating film It is preferable to apply a pressure to the film thickness direction of the said base material with a coating film while passing a material. As for the said base material with a coating film, a base material may exist only on one surface of a coating film, and a base material may exist on both surfaces of a coating film. The above-mentioned substrate with a coating film may be passed only once or a plurality of times in the roll pressing. When performing the hardening process in the semi-hardening process and/or the main hardening process, etc., only one of the process by flat pressing and the process by rolling may be performed, or both may be performed.

關於包括硬化反應之導熱材料的製作,亦能夠參閱“高導熱性複合材料”(CMC出版,竹澤由高著)。For the production of thermally conductive materials including hardening reactions, you can also refer to "High Thermal Conductivity Composite Materials" (published by CMC, written by Yutaka Takezawa).

導熱材料的形狀並無特別限制,按照用途能夠成型成各種各樣之形狀。作為所成型之導熱材料的典型之形狀,例如可以舉出片狀。 亦即,使用本發明的組成物所獲得之導熱材料為導熱片亦為較佳。 又,使用本發明的組成物所獲得之導熱材料的導熱性不是各向異性而是各向同性為較佳。The shape of the thermally conductive material is not particularly limited, and can be molded into various shapes according to the application. As a typical shape of the thermally conductive material to be molded, for example, a sheet shape is mentioned. That is, it is also preferable that the thermally conductive material obtained by using the composition of the present invention is a thermally conductive sheet. In addition, the thermal conductivity of the thermally conductive material obtained by using the composition of the present invention is preferably not anisotropic but isotropic.

導熱材料為絕緣性(電絕緣性)為較佳。換言之,本發明的組成物為導熱性絕緣組成物為較佳。 例如,導熱材料在23℃且相對濕度65%中之體積電阻為1010 Ω・cm以上為較佳,1012 Ω・cm以上為更佳,1014 Ω・cm以上為進一步較佳。上限並無特別限制,但是通常為1018 Ω・cm以下。The thermally conductive material is preferably insulating (electrically insulating). In other words, the composition of the present invention is preferably a thermally conductive insulating composition. For example, the volume resistance of the thermally conductive material at 23°C and relative humidity of 65% is preferably 10 10 Ω·cm or more, more preferably 10 12 Ω·cm or more, and even more preferably 10 14 Ω·cm or more. The upper limit is not particularly limited, but is usually 10 18 Ω·cm or less.

〔導熱材料的用途〕 使用本發明的組成物所獲得之導熱材料能夠用作散熱片等散熱材料,並且能夠使用於各種元件的散熱用途。更具體而言,在元件上配置包含本發明的導熱材料之導熱層來製作附導熱層的元件,從而能夠利用導熱層有效地對來自元件之發熱進行散熱。上述導熱層可以為包括後述導熱性多層片之導熱層。 使用本發明的組成物所獲得之導熱材料具有充分的導熱性且具有高耐熱性,因此適用於在個人電腦、普通家用電器及汽車等各種各樣之電子設備中所使用之功率半導體元件的散熱用途。 進而,使用本發明的組成物所獲得之導熱材料即使在半硬化狀態下亦具有充分的導熱性,因此亦能夠用作配置於各種裝置的構件間隙等的、用於光硬化的光難以到達之部位之散熱材料。又,接著性亦優異,因此亦能夠用作具有導熱性之接著劑。[Use of thermally conductive materials] The thermally conductive material obtained by using the composition of the present invention can be used as a heat-dissipating material such as a heat sink, and can be used for heat-dissipating applications of various elements. More specifically, by arranging a thermally conductive layer containing the thermally conductive material of the present invention on the element to produce a thermally conductive layer-attached element, the thermally conductive layer can effectively dissipate heat generated from the element. The thermally conductive layer may be a thermally conductive layer including a thermally conductive multilayer sheet described later. The thermally conductive material obtained by using the composition of the present invention has sufficient thermal conductivity and high heat resistance, so it is suitable for heat dissipation of power semiconductor elements used in various electronic devices such as personal computers, general household appliances, and automobiles. use. Furthermore, since the thermally conductive material obtained by using the composition of the present invention has sufficient thermal conductivity even in a semi-hardened state, it can also be used as a space between components arranged in various devices, where light for photohardening is difficult to reach. Part of the heat dissipation material. Moreover, since it is also excellent in adhesiveness, it can also be used as an adhesive agent which has thermal conductivity.

使用本發明的組成物所獲得之導熱材料可以與除了由本組成物形成之構件以外的其他構件組合而使用。 例如,片狀的導熱材料(導熱片)亦可以與除了由本組成物形成之層以外的片狀的支撐體組合。 作為片狀的支撐體,例如可以舉出塑膠薄膜、金屬薄膜或玻璃板。作為塑膠薄膜的材料,例如可以舉出聚對酞酸乙二酯(PET)等聚酯、聚碳酸酯、丙烯酸樹脂、環氧樹脂、聚胺酯、聚醯胺基、聚烯烴、纖維素衍生物及聚矽氧。作為金屬薄膜,例如可以舉出銅薄膜。 片狀的導熱材料(導熱片)的膜厚為100~300μm為較佳,150~250μm為更佳。The thermally conductive material obtained using the composition of the present invention can be used in combination with other members than the member formed of the composition. For example, a sheet-shaped thermally conductive material (thermally conductive sheet) may be combined with a sheet-shaped support body other than the layer formed of the present composition. As a sheet-like support, a plastic film, a metal film, or a glass plate is mentioned, for example. As the material of the plastic film, for example, polyester such as polyethylene terephthalate (PET), polycarbonate, acrylic resin, epoxy resin, polyurethane, polyamide, polyolefin, cellulose derivative and polysiloxane. As a metal thin film, a copper thin film is mentioned, for example. The film thickness of the sheet-like thermally conductive material (thermally conductive sheet) is preferably 100 to 300 μm, and more preferably 150 to 250 μm.

又,可以將接著劑層和/或黏著劑層與導熱材料(較佳為導熱片)進行組合。 藉由將導熱材料經由該種接著劑層和/或黏著劑層與如元件那樣應轉移熱之對象物進行接合,能夠實現導熱材料與對象物的更牢固的接合。 例如,作為導熱性多層片,可以製作具有導熱片和設置於上述導熱片的單面或兩面上之接著劑層或黏著劑層之導熱性多層片。 再者,在上述導熱片的單面或兩面上可以分別設置有接著劑層及黏著劑層中的一者,亦可以設置有兩者。亦可以在上述導熱片的一側表面上設置有接著劑層而在另一側表面上設置有黏著劑層。又,在上述導熱片的單面或兩面上可以局部設置有接著劑層和/或黏著劑層,亦可以全面設置。 再者,如上所述,在本發明中,導熱片等導熱材料可以為半硬化狀態(半硬化膜),導熱性多層片中之導熱片亦可以為半硬化狀態。導熱性多層片中之接著劑層可以為硬化狀態,亦可以為半硬化狀態,亦可以為未硬化狀態。 [實施例]In addition, the adhesive layer and/or the adhesive layer may be combined with a thermally conductive material (preferably, a thermally conductive sheet). By bonding the thermally conductive material to an object that should transfer heat, such as an element, via such an adhesive layer and/or an adhesive layer, it is possible to achieve stronger bonding between the thermally conductive material and the object. For example, as a thermally conductive multilayer sheet, a thermally conductive multilayer sheet having a thermally conductive sheet and an adhesive layer or an adhesive layer provided on one or both surfaces of the thermally conductive sheet can be produced. Furthermore, one of the adhesive layer and the adhesive layer may be respectively provided on one side or both sides of the thermally conductive sheet, or both may be provided. An adhesive layer may be provided on one surface of the thermally conductive sheet, and an adhesive layer may be provided on the other surface. In addition, an adhesive layer and/or an adhesive layer may be partially provided on one or both surfaces of the thermally conductive sheet, or may be provided on the entire surface. Furthermore, as described above, in the present invention, a thermally conductive material such as a thermally conductive sheet may be in a semi-cured state (semi-cured film), and the thermally conductive sheet in the thermally conductive multilayer sheet may be in a semi-cured state. The adhesive layer in the thermally conductive multilayer sheet may be in a hardened state, a semi-hardened state, or an unhardened state. [Example]

以下,基於實施例對本發明進一步進行詳細說明。以下實施例所示之材料、使用量、比例、處理內容及處理步驟等,只要不脫離本發明的主旨便能夠適當地變更。藉此,本發明的範圍不應被以下所示之實施例做限定性解釋。Hereinafter, the present invention will be described in further detail based on examples. Materials, usage amounts, ratios, processing contents, processing steps, and the like shown in the following examples can be appropriately changed without departing from the gist of the present invention. Accordingly, the scope of the present invention should not be limitedly construed by the examples shown below.

[實施例X(改質氮化硼粒子的製造及評價)] 〔製造〕 藉由以下所示之方法,製造了實施例或比較例的改質氮化硼粒子。[Example X (Production and Evaluation of Modified Boron Nitride Particles)] 〔manufacture〕 By the method shown below, the modified boron nitride particles of Examples or Comparative Examples were produced.

<實施例1> 向NaOH水(NaOH:40g/水:400ml)中添加氮化硼粒子A(壓縮破壞強度3.5MPa、中值徑21μm、凝聚狀的粒子)(50g)並進行了攪拌。向上述NaOH水中進一步添加過硫酸鈉水(過硫酸鈉:9.6g/水:100ml)之後,將上述NaOH水升溫至50℃並進一步攪拌了3小時(改質步驟)。關於攪拌,使用Shinto Scientific Co.,Ltd.製三一馬達,並以150rpm進行。 將上述NaOH水冷卻至室溫之後,過濾收集上述NaOH水中的氮化硼粒子,並用水(500ml)及乙腈(250ml)清洗所過濾收集之氮化硼粒子,從而獲得了改質氮化硼粒子1(亦稱為“BNa1”)。 將所獲得之改質氮化硼粒子1在乙腈(100ml)中進行攪拌,並向上述乙腈中進一步添加了矽烷偶合劑(Shin-Etsu Chemical Co.,Ltd.製:X12-984S)的水解調整液(1.25g)。將上述乙腈在室溫下攪拌3小時以進行了吸附處理(吸附步驟)。 過濾收集上述乙腈中的改質氮化硼粒子1之後,用乙腈(100ml)清洗所過濾收集之改質氮化硼粒子1,並用40℃的烘箱使其乾燥,從而獲得了表面修飾氮化硼粒子1(亦稱為“BN1”)。 再者,關於矽烷偶合劑的水解調整液,藉由將矽烷偶合劑(1g)、乙醇(500μl)、2-丙醇(500μl)、水(720μl)、乙酸(100μl)進行混合並攪拌1小時來進行了調整。在以下實施例或比較例中,除非另有說明,則矽烷偶合劑的水解調整液的配合相同。 又,“X12-984S”為具有環氧基及乙氧基甲矽烷基之聚合物類型的矽烷偶合劑。<Example 1> To NaOH water (NaOH: 40 g/water: 400 ml), boron nitride particles A (compressive fracture strength of 3.5 MPa, median diameter of 21 μm, aggregated particles) (50 g) were added and stirred. After adding sodium persulfate water (sodium persulfate: 9.6 g/water: 100 ml) to the above NaOH water, the above NaOH water was heated to 50° C. and further stirred for 3 hours (modification step). For stirring, a Sany motor manufactured by Shinto Scientific Co., Ltd. was used, and it was performed at 150 rpm. After cooling the above NaOH water to room temperature, the boron nitride particles in the above NaOH water were collected by filtration, and the filtered and collected boron nitride particles were washed with water (500 ml) and acetonitrile (250 ml) to obtain modified boron nitride particles. 1 (also known as "BNa1"). The obtained modified boron nitride particles 1 were stirred in acetonitrile (100 ml), and a silane coupling agent (manufactured by Shin-Etsu Chemical Co., Ltd.: X12-984S) was further added to the acetonitrile for hydrolysis adjustment. liquid (1.25g). The above-mentioned acetonitrile was stirred at room temperature for 3 hours to perform adsorption treatment (adsorption step). After the modified boron nitride particles 1 in the acetonitrile were collected by filtration, the modified boron nitride particles 1 collected by filtration were washed with acetonitrile (100 ml), and dried in an oven at 40°C to obtain surface-modified boron nitride. Particle 1 (also known as "BN1"). In addition, regarding the hydrolysis adjustment liquid of the silane coupling agent, the silane coupling agent (1 g), ethanol (500 μl), 2-propanol (500 μl), water (720 μl), and acetic acid (100 μl) were mixed and stirred for 1 hour. to be adjusted. In the following Examples or Comparative Examples, the formulation of the hydrolysis adjustment liquid of the silane coupling agent was the same unless otherwise specified. Moreover, "X12-984S" is a polymer type silane coupling agent which has an epoxy group and an ethoxysilyl group.

<實施例2> 將實施例1的矽烷偶合劑變更為KBM-403(Shin-Etsu Chemical Co.,Ltd.製),除此以外,藉由與實施例1相同的製造方法獲得了表面修飾氮化硼粒子2(亦稱為“BN2”)。 再者,“KBM-403”為3-環氧丙氧基丙基三甲氧基矽烷。<Example 2> Surface-modified boron nitride particles 2 ( Also known as "BN2"). In addition, "KBM-403" is 3-glycidoxypropyltrimethoxysilane.

<實施例3> 向NaOH水(NaOH:40g/水:400ml)中添加氮化硼粒子A(50g)並進行了攪拌。向上述NaOH水中進一步添加過硫酸鈉水(過硫酸鈉:9.6g/水:100ml)之後,將其升溫至50℃並進一步攪拌了3小時(改質步驟)。關於攪拌,使用Shinto Scientific Co.,Ltd.製三一馬達,並以150rpm進行。將上述NaOH水冷卻至室溫之後,過濾收集上述NaOH水中的氮化硼粒子,並用水(500ml)及環戊酮(250ml)清洗所過濾收集之氮化硼粒子,從而獲得了改質氮化硼粒子。 向所獲得之改質氮化硼粒子中添加環戊酮(100ml)及環氧樹脂(Mitsubishi Chemical Corporation.製、YX7180BH40)(1g),並將所獲得之混合液在120℃下攪拌3小時以進行了吸附處理(吸附步驟)。 過濾收集上述混合液中的改質氮化硼粒子,用環戊酮(100ml)清洗所過濾收集之改質氮化硼粒子,並用40℃的烘箱使其乾燥,從而獲得了表面修飾氮化硼粒子3(亦稱為“BN3”)。<Example 3> Boron nitride particles A (50 g) were added to NaOH water (NaOH: 40 g/water: 400 ml) and stirred. After adding sodium persulfate water (sodium persulfate: 9.6 g/water: 100 ml) to the above-mentioned NaOH water, the temperature was raised to 50° C. and further stirred for 3 hours (modification step). For stirring, a Sany motor manufactured by Shinto Scientific Co., Ltd. was used, and it was performed at 150 rpm. After cooling the above-mentioned NaOH water to room temperature, the boron nitride particles in the above-mentioned NaOH water were collected by filtration, and the filtered and collected boron nitride particles were washed with water (500ml) and cyclopentanone (250ml), thereby obtaining a modified nitride boron particles. To the obtained modified boron nitride particles, cyclopentanone (100 ml) and epoxy resin (Mitsubishi Chemical Corporation, YX7180BH40) (1 g) were added, and the obtained mixed solution was stirred at 120° C. for 3 hours. Adsorption treatment (adsorption step) was performed. The modified boron nitride particles in the above mixed solution were collected by filtration, washed with cyclopentanone (100ml), and the modified boron nitride particles collected by filtration were dried in an oven at 40°C to obtain surface-modified boron nitride. Particle 3 (also known as "BN3").

<實施例4> 向NaOH水(NaOH:40g/水:400ml)中添加氮化硼粒子A(50g)並進行了攪拌。向上述NaOH水中進一步添加過硫酸鈉水(過硫酸鈉:9.6g/水:100ml)和硫酸鐵七水合物(1.1g)之後,將上述NaOH水升溫至50℃並進一步攪拌了3小時(改質步驟)。關於攪拌,使用Shinto Scientific Co.,Ltd.製三一馬達,並以150rpm進行。 將上述NaOH水冷卻至室溫之後,過濾收集上述NaOH水中的氮化硼粒子,並用1N鹽酸水(500ml)、水(500ml)及乙腈(250ml)清洗所過濾收集之氮化硼粒子,從而獲得了改質氮化硼粒子。 將所獲得之改質氮化硼粒子在乙腈(100ml)中進行攪拌,並向上述乙腈中進一步添加了矽烷偶合劑(X12-984S)的水解調整液(1.25g)。將上述乙腈在室溫下攪拌3小時以進行了吸附處理(吸附步驟)。 過濾收集上述乙腈中的改質氮化硼粒子之後,用乙腈(100ml)清洗所過濾收集之改質氮化硼粒子,並用40℃的烘箱使其乾燥,從而獲得了表面修飾氮化硼粒子4(亦稱為“BN4”)。<Example 4> Boron nitride particles A (50 g) were added to NaOH water (NaOH: 40 g/water: 400 ml) and stirred. After adding sodium persulfate water (sodium persulfate: 9.6 g/water: 100 ml) and iron sulfate heptahydrate (1.1 g) to the above-mentioned NaOH water, the above-mentioned NaOH water was heated to 50°C and further stirred for 3 hours (changed to qualitative steps). For stirring, a Sany motor manufactured by Shinto Scientific Co., Ltd. was used, and it was performed at 150 rpm. After cooling the above NaOH water to room temperature, the boron nitride particles in the above NaOH water were collected by filtration, and the boron nitride particles collected by filtration were washed with 1N hydrochloric acid water (500ml), water (500ml) and acetonitrile (250ml) to obtain modified boron nitride particles. The obtained modified boron nitride particles were stirred in acetonitrile (100 ml), and a hydrolysis adjustment liquid (1.25 g) containing a silane coupling agent (X12-984S) was further added to the acetonitrile. The above-mentioned acetonitrile was stirred at room temperature for 3 hours to perform adsorption treatment (adsorption step). After the modified boron nitride particles in the acetonitrile were collected by filtration, the modified boron nitride particles collected by filtration were washed with acetonitrile (100 ml) and dried in an oven at 40°C, thereby obtaining surface-modified boron nitride particles 4 (Also known as "BN4").

<實施例5> 向水(400ml)中添加氮化硼粒子A(50g)並進行攪拌,從而獲得了混合液。向上述混合液中進一步添加次氯酸鈉水(次氯酸鈉五水合物:48g/水:100ml)之後,將上述混合液升溫至50℃並進一步攪拌了3小時(改質步驟)。關於攪拌,使用Shinto Scientific Co.,Ltd.製三一馬達,並以150rpm進行。 將上述混合液冷卻至室溫之後,過濾收集上述混合液中的氮化硼粒子,並用水(500ml)及乙腈(250ml)清洗所過濾收集之氮化硼粒子,從而獲得了改質氮化硼粒子。 將所獲得之改質氮化硼粒子在乙腈(100ml)中進行攪拌,並向上述乙腈中進一步添加了矽烷偶合劑(X12-984S)的水解調整液(1.25g)。將上述乙腈在室溫下攪拌3小時以進行了吸附處理(吸附步驟)。 過濾收集上述乙腈中的改質氮化硼粒子之後,用乙腈(100ml)清洗所過濾收集之改質氮化硼粒子,並用40℃的烘箱使其乾燥,從而獲得了表面修飾氮化硼粒子5(亦稱為“BN5”)。<Example 5> To water (400 ml), boron nitride particles A (50 g) were added and stirred to obtain a mixed liquid. After adding sodium hypochlorite water (sodium hypochlorite pentahydrate: 48 g/water: 100 ml) to the above-mentioned mixed solution, the above-mentioned mixed solution was heated to 50° C. and further stirred for 3 hours (modification step). For stirring, a Sany motor manufactured by Shinto Scientific Co., Ltd. was used, and it was performed at 150 rpm. After cooling the above mixed solution to room temperature, the boron nitride particles in the above mixed solution were collected by filtration, and the filtered and collected boron nitride particles were washed with water (500ml) and acetonitrile (250ml) to obtain modified boron nitride. particle. The obtained modified boron nitride particles were stirred in acetonitrile (100 ml), and a hydrolysis adjustment liquid (1.25 g) containing a silane coupling agent (X12-984S) was further added to the acetonitrile. The above-mentioned acetonitrile was stirred at room temperature for 3 hours to perform adsorption treatment (adsorption step). After the modified boron nitride particles in the acetonitrile were collected by filtration, the modified boron nitride particles collected by filtration were washed with acetonitrile (100 ml), and dried in an oven at 40°C to obtain surface-modified boron nitride particles 5 (Also known as "BN5").

<實施例6> 向NaOH水(NaOH:40g/水:400ml)中添加氮化硼粒子A(50g)並進行了攪拌。向上述NaOH水中進一步添加硝酸鈰銨水(硝酸鈰銨:9.6g/水:100ml)之後,將上述NaOH水升溫至50℃並進一步攪拌了3小時(改質步驟)。關於攪拌,使用Shinto Scientific Co.,Ltd.製三一馬達,並以150rpm進行。 將上述NaOH水冷卻至室溫之後,過濾收集上述NaOH水中的氮化硼粒子,並用1N鹽酸水(500ml)、水(500ml)及乙腈(250ml)清洗所過濾收集之氮化硼粒子,從而獲得了改質氮化硼粒子。 將所獲得之改質氮化硼粒子在乙腈(100ml)中進行攪拌,並向上述乙腈中進一步添加了矽烷偶合劑(X12-984S)的水解調整液(1.25g)。將上述乙腈在室溫下攪拌3小時以進行了吸附處理(吸附步驟)。 過濾收集上述乙腈中的改質氮化硼粒子之後,用乙腈(100ml)清洗所過濾收集之改質氮化硼粒子,並用40℃的烘箱使其乾燥,從而獲得了表面修飾氮化硼粒子6(亦稱為“BN6”)。<Example 6> Boron nitride particles A (50 g) were added to NaOH water (NaOH: 40 g/water: 400 ml) and stirred. After further adding ceric ammonium nitrate water (ceric ammonium nitrate: 9.6 g/water: 100 ml) to the above NaOH water, the above NaOH water was heated to 50° C. and further stirred for 3 hours (modification step). For stirring, a Sany motor manufactured by Shinto Scientific Co., Ltd. was used, and it was performed at 150 rpm. After cooling the above NaOH water to room temperature, the boron nitride particles in the above NaOH water were collected by filtration, and the boron nitride particles collected by filtration were washed with 1N hydrochloric acid water (500ml), water (500ml) and acetonitrile (250ml) to obtain modified boron nitride particles. The obtained modified boron nitride particles were stirred in acetonitrile (100 ml), and a hydrolysis adjustment liquid (1.25 g) containing a silane coupling agent (X12-984S) was further added to the acetonitrile. The above-mentioned acetonitrile was stirred at room temperature for 3 hours to perform adsorption treatment (adsorption step). After the modified boron nitride particles in the acetonitrile were collected by filtration, the modified boron nitride particles collected by filtration were washed with acetonitrile (100 ml) and dried in an oven at 40°C, thereby obtaining surface-modified boron nitride particles 6 (Also known as "BN6").

<實施例7> 將實施例1的過硫酸鈉水設成(過硫酸鈉:48g/水:400ml),除此以外,藉由與實施例1相同的製造方法獲得了表面修飾氮化硼粒子7(亦稱為“BN7”)。<Example 7> Surface-modified boron nitride particles 7 (also called surface-modified boron nitride particles 7) were obtained by the same production method as in Example 1, except that the sodium persulfate water of Example 1 was used (sodium persulfate: 48 g/water: 400 ml). "BN7").

<實施例8> 將實施例1的NaOH水設成(NaOH:2g/水:400ml),除此以外,藉由與實施例1相同的製造方法獲得了表面修飾氮化硼粒子8(亦稱為“BN8”)。<Example 8> Surface-modified boron nitride particles 8 (also referred to as "BN8") were obtained by the same production method as in Example 1, except that the NaOH water of Example 1 was used (NaOH: 2 g/water: 400 ml). .

<實施例9> 將實施例1的過硫酸鈉水設成碘酸鉀水(碘酸鉀:9.6g/水:100ml),除此以外,藉由與實施例1相同的製造方法獲得了表面修飾氮化硼粒子9(亦稱為“BN9”)。<Example 9> Surface-modified boron nitride particles were obtained by the same production method as in Example 1, except that the sodium persulfate water in Example 1 was potassium iodate water (potassium iodate: 9.6 g/water: 100 ml). 9 (also known as "BN9").

<實施例10> 向NaOH水(NaOH:8g/水:80ml)中添加氮化硼粒子A(10g)並進行了攪拌。向上述NaOH水中進一步添加過硫酸鈉水(過硫酸鈉:1.9g/水:20ml)之後,將上述NaOH水攪拌了3小時(改質步驟)。關於攪拌,利用塗料調節器,並使用直徑0.5mm的玻璃珠進行。 過濾收集上述NaOH水中的氮化硼粒子,並用水(500ml)及乙腈(250ml)清洗了所過濾收集之氮化硼粒子。 將所獲得之改質氮化硼粒子在乙腈(100ml)中進行攪拌,並向上述乙腈中進一步添加了矽烷偶合劑(X12-984S)的水解調整液(1.25g)。將上述乙腈在室溫下攪拌3小時以進行了吸附處理(吸附步驟)。 過濾收集上述乙腈中的改質氮化硼粒子之後,用乙腈(100ml)清洗所過濾收集之改質氮化硼粒子,並用40℃的烘箱使其乾燥,從而獲得了表面修飾氮化硼粒子10(亦稱為“BN10”)。<Example 10> Boron nitride particles A (10 g) were added to NaOH water (NaOH: 8 g/water: 80 ml) and stirred. After adding sodium persulfate water (sodium persulfate: 1.9 g/water: 20 ml) to the above NaOH water, the above NaOH water was stirred for 3 hours (modification step). The stirring was performed using a paint conditioner and glass beads having a diameter of 0.5 mm. The boron nitride particles in the above NaOH water were collected by filtration, and the boron nitride particles collected by filtration were washed with water (500 ml) and acetonitrile (250 ml). The obtained modified boron nitride particles were stirred in acetonitrile (100 ml), and a hydrolysis adjustment liquid (1.25 g) containing a silane coupling agent (X12-984S) was further added to the acetonitrile. The above-mentioned acetonitrile was stirred at room temperature for 3 hours to perform adsorption treatment (adsorption step). After the modified boron nitride particles in the acetonitrile were collected by filtration, the modified boron nitride particles collected by filtration were washed with acetonitrile (100 ml), and dried in an oven at 40°C to obtain surface-modified boron nitride particles 10 (Also known as "BN10").

<實施例11> 將實施例1的氮化硼粒子變更為壓縮破壞強度8.0MPa的氮化硼粒子B(中值徑30μm、凝聚狀的粒子),除此以外,藉由與實施例1相同的製造方法獲得了表面修飾氮化硼粒子11(亦稱為“BN11”)。<Example 11> The boron nitride particles of Example 1 were obtained by the same production method as in Example 1, except that the boron nitride particles B (median diameter 30 μm, aggregated particles) having a compressive rupture strength of 8.0 MPa were used. Surface-modified boron nitride particles 11 (also referred to as "BN11").

<實施例12> 將實施例1的氮化硼粒子變更為中值徑4μm的氮化硼粒子C(鱗片狀的粒子),除此以外,藉由與實施例1相同的製造方法獲得了表面修飾氮化硼粒子12(亦稱為“BN12”)。<Example 12> Surface-modified boron nitride particles were obtained by the same production method as in Example 1, except that the boron nitride particles of Example 1 were changed to boron nitride particles C (scaly particles) having a median diameter of 4 μm. 12 (also known as "BN12").

<比較例1> 向水(400ml)中添加氮化硼粒子A(50g)並進行攪拌,從而獲得了混合液。向上述混合液中進一步添加30質量%的過氧化氫水(30ml)之後,將上述混合液升溫至50℃並進一步攪拌了3小時。關於攪拌,使用Shinto Scientific Co.,Ltd.製三一馬達,並以150rpm進行。 將上述混合液冷卻至室溫之後,過濾收集上述混合液中的氮化硼粒子,並用水(500ml)及乙腈(250ml)清洗所過濾收集之氮化硼粒子,從而獲得了改質氮化硼粒子。 將所獲得之改質氮化硼粒子在乙腈(100ml)中進行攪拌,並向上述乙腈中進一步添加了矽烷偶合劑(KBM-403)的水解調整液(1.25g)。將上述乙腈在室溫下攪拌3小時以進行了吸附處理。 過濾收集上述乙腈中的改質氮化硼粒子之後,用乙腈(100ml)清洗所過濾收集之改質氮化硼粒子,並用40℃的烘箱使其乾燥,從而獲得了表面修飾氮化硼粒子b1(亦稱為“BNb1”)。<Comparative Example 1> To water (400 ml), boron nitride particles A (50 g) were added and stirred to obtain a mixed liquid. After 30 mass % of hydrogen peroxide water (30 ml) was further added to the said liquid mixture, the said liquid mixture was heated up to 50 degreeC, and it stirred for further 3 hours. For stirring, a Sany motor manufactured by Shinto Scientific Co., Ltd. was used, and it was performed at 150 rpm. After cooling the above mixed solution to room temperature, the boron nitride particles in the above mixed solution were collected by filtration, and the filtered and collected boron nitride particles were washed with water (500ml) and acetonitrile (250ml) to obtain modified boron nitride. particle. The obtained modified boron nitride particles were stirred in acetonitrile (100 ml), and a hydrolysis adjustment solution (1.25 g) containing a silane coupling agent (KBM-403) was further added to the acetonitrile. The above-mentioned acetonitrile was stirred at room temperature for 3 hours to perform adsorption treatment. After the modified boron nitride particles in the acetonitrile were collected by filtration, the modified boron nitride particles collected by filtration were washed with acetonitrile (100 ml) and dried in an oven at 40°C to obtain surface-modified boron nitride particles b1 (Also known as "BNb1").

<比較例2> 將實施例1的NaOH水變更為(NaOH:0.02g/水:400ml),除此以外,藉由與實施例1相同的製造方法獲得了表面修飾氮化硼粒子b2(亦稱為“BNb2”)。<Comparative Example 2> Surface-modified boron nitride particles b2 (also referred to as "BNb2") were obtained by the same production method as in Example 1, except that the NaOH water in Example 1 was changed to (NaOH: 0.02 g/water: 400 ml). ).

<比較例3> 參閱日本專利第3468615號,將氮化硼粒子A(50g)在1000℃下加熱1小時,從而獲得了改質氮化硼粒子。 將所獲得之改質氮化硼粒子在乙腈(100ml)中進行攪拌,並向上述乙腈中進一步添加了矽烷偶合劑(KBM-403)的水解調整液(1.25g)。將上述乙腈在室溫下攪拌3小時以進行了吸附處理。 過濾收集上述乙腈中的改質氮化硼粒子之後,用乙腈(100ml)清洗所過濾收集之改質氮化硼粒子,並用40℃的烘箱使其乾燥,從而獲得了表面修飾氮化硼粒子b3(亦稱為“BNb3”)。<Comparative Example 3> Referring to Japanese Patent No. 3468615, boron nitride particles A (50 g) were heated at 1000° C. for 1 hour to obtain modified boron nitride particles. The obtained modified boron nitride particles were stirred in acetonitrile (100 ml), and a hydrolysis adjustment solution (1.25 g) containing a silane coupling agent (KBM-403) was further added to the acetonitrile. The above-mentioned acetonitrile was stirred at room temperature for 3 hours to perform adsorption treatment. After the modified boron nitride particles in the acetonitrile were collected by filtration, the modified boron nitride particles collected by filtration were washed with acetonitrile (100 ml), and dried in an oven at 40°C to obtain surface-modified boron nitride particles b3 (Also known as "BNb3").

<比較例4> 將氮化硼粒子A(50g)在乙腈(100ml)中進行攪拌,並向上述乙腈中進一步添加了矽烷偶合劑(KBM-403)的水解調整液(1.25g)。將上述乙腈在室溫下攪拌3小時以進行了吸附處理。 過濾收集上述乙腈中的氮化硼粒子之後,用乙腈(100ml)清洗所過濾收集之氮化硼粒子,並用40℃的烘箱使其乾燥,從而獲得了表面修飾氮化硼粒子b4(亦稱為“BNb4”)。<Comparative Example 4> The boron nitride particles A (50 g) were stirred in acetonitrile (100 ml), and a hydrolysis adjustment liquid (1.25 g) containing a silane coupling agent (KBM-403) was further added to the acetonitrile. The above-mentioned acetonitrile was stirred at room temperature for 3 hours to perform adsorption treatment. After the boron nitride particles in the acetonitrile were collected by filtration, the boron nitride particles collected by filtration were washed with acetonitrile (100 ml), and dried in an oven at 40°C, thereby obtaining surface-modified boron nitride particles b4 (also known as boron nitride particles). "BNb4").

〔改質氮化硼粒子的評價〕 藉由以下方法對在各實施例或比較例中所製造之改質氮化硼粒子進行了評價。 再者,改質氮化硼粒子亦包含表面修飾氮化硼粒子。[Evaluation of modified boron nitride particles] The modified boron nitride particles produced in the respective Examples or Comparative Examples were evaluated by the following methods. Furthermore, the modified boron nitride particles also include surface-modified boron nitride particles.

<表面氧量或表面碳量> 使用X射線光電子分光裝置(Ulvac-PHI公司製:Versa Probe II),並在說明書中的上述條件下分別測量了改質氮化硼粒子的表面上之氧原子濃度及碳原子濃度(單位均為原子%)。<Surface oxygen content or surface carbon content> Using an X-ray photoelectron spectrometer (Ulvac-PHI: Versa Probe II), the oxygen atomic concentration and carbon atomic concentration (unit: atom%).

(氧原子濃度) 將所測量之改質氮化硼粒子的表面上之氧原子濃度分類為以下類別。再者,任一實施例或比較例的改質氮化硼粒子的表面上之氧原子濃度均為20.0atom%以下。 A:大於5.0atom% B:3.0atom%以上且5.0atom%以下 C:小於3.0atom%(Oxygen atomic concentration) The oxygen atomic concentrations on the surfaces of the modified boron nitride particles measured were classified into the following categories. In addition, the oxygen atomic concentration on the surface of the modified boron nitride particles of any of the Examples and Comparative Examples was 20.0 atom % or less. A: More than 5.0atom% B: 3.0atom% or more and 5.0atom% or less C: less than 3.0atom%

(碳原子濃度) 將所測量之改質氮化硼粒子的表面上之碳原子濃度分類為以下類別。再者,任一實施例或比較例的改質氮化硼粒子的表面上之碳原子濃度均為30.0atom%以下。 A:6.0atom%以上 B:超過3.0atom%且小於6.0atom% C:3.0atom%以下(carbon atomic concentration) The measured concentrations of carbon atoms on the surface of the modified boron nitride particles were classified into the following categories. In addition, the carbon atom concentration on the surface of the modified boron nitride particles of any example or comparative example was 30.0 atom% or less. A: 6.0 atom% or more B: More than 3.0atom% and less than 6.0atom% C: 3.0 atom% or less

<接觸角> 將改質氮化硼粒子放入手壓機用配接器30mmφ中,並以600kgf/cm2 (5880N/cm2 )的壓力加壓1分鐘,從而獲得了壓粉體。利用Kyowa Interface Science Co.,Ltd.製接觸角計(DM700)測量了壓粉體與水的接觸角。接觸角讀取在壓粉體上製作液滴之後200ms後的接觸角的值。 將所測量之改質氮化硼粒子與水的接觸角分類為以下類別。 再者,任一實施例或比較例的改質氮化硼粒子的接觸角均超過0°。 A:小於75° B:75°以上且90°以下 C:大於90°<Contact angle> The modified boron nitride particles were placed in a 30 mmφ adapter for a hand press, and pressed at a pressure of 600 kgf/cm 2 (5880 N/cm 2 ) for 1 minute to obtain a powder compact. The contact angle of the powder compact with water was measured using a contact angle meter (DM700) manufactured by Kyowa Interface Science Co., Ltd. Contact angle The value of the contact angle 200 ms after the formation of droplets on the compact was read. The measured contact angles of modified boron nitride particles with water are classified into the following categories. In addition, the contact angle of the modified boron nitride particles of any of the Examples and Comparative Examples exceeded 0°. A: Less than 75° B: More than 75° and less than 90° C: More than 90°

<D值> 對改質氮化硼粒子進行X射線衍射測量,並由下述式(1)求出了D值。 式(1):D值=B(OH)3 (002)/BN(002) B(OH)3 (002):來自於藉由X射線衍射而測量之具有三斜晶系空間群組之氫氧化硼的(002)面之峰值強度(2θ=25°~30°) BN(002):來自於藉由X射線衍射而測量之具有六方晶系空間群組之氮化硼的(002)面之峰值強度(2θ=27.5°~28.5°) 將所求出之改質氮化硼粒子的D值分類為以下類別。 A:0.007以下 B:大於0.007且0.010以下 C:大於0.010<D value> The modified boron nitride particles were subjected to X-ray diffraction measurement, and the D value was determined from the following formula (1). Formula (1): D value=B(OH) 3 (002)/BN(002) B(OH) 3 (002): derived from hydrogen with triclinic space group measured by X-ray diffraction Peak intensity of (002) plane of boron oxide (2θ=25°~30°) BN(002): derived from (002) plane of boron nitride with hexagonal space group measured by X-ray diffraction Peak intensity (2θ=27.5° to 28.5°) The D values of the modified boron nitride particles obtained were classified into the following categories. A: Less than 0.007 B: More than 0.007 and less than 0.010 C: More than 0.010

<中值徑的變化率> 使用Malvern Panalytical Ltd製的Master sizer2000,並以分散空氣壓力:2.0Bar在乾式的測量條件下求出了用於改質氮化硼粒子的製造中之氮化硼粒子的中值徑及所製造之改質氮化硼粒子的中值徑。將所求出之中值徑帶入下述式中,從而求出了製造改質氮化硼粒子之過程中的中值徑的變化率。 式:中值徑的變化率(%)=〔1-(所製造之改質氮化硼粒子的中值徑)/(改質氮化硼粒子的製造中所使用之氮化硼粒子的中值徑)〕×100 將所求出之中值徑的變化率分類為以下類別。再者,任一實施例或比較例的改質氮化硼粒子的中值徑的變化率均為0%以上。 A:小於5% B:5%以上且小於10% C:10%以上<Rate of change in median diameter> Using Master sizer 2000 manufactured by Malvern Panalytical Ltd, the median diameter of the boron nitride particles used in the production of the modified boron nitride particles and the diameter of the produced boron nitride particles were determined under dry measurement conditions with dispersion air pressure: 2.0 Bar. The median diameter of the modified boron nitride particles. The change rate of the median diameter in the process of producing the modified boron nitride particles was obtained by substituting the obtained median diameter into the following formula. Formula: Change rate of median diameter (%)=[1-(median diameter of modified boron nitride particles produced)/(median of boron nitride particles used in the production of modified boron nitride particles) value diameter)]×100 The change rates of the obtained median diameters are classified into the following categories. In addition, the change rate of the median diameter of the modified boron nitride particles of any of the Examples and Comparative Examples was 0% or more. A: less than 5% B: 5% or more and less than 10% C: 10% or more

<中值徑> 藉由與上述<中值徑的變化率>相同的方法來測量改質氮化硼粒子的中值徑,並將其分類為以下類別。 再者,任一實施例或比較例的改質氮化硼粒子的中值徑均為0.5μm以上。 A:中值徑為10μm以上 B:中值徑小於10μm<median diameter> The median diameter of the modified boron nitride particles was measured by the same method as the above-mentioned <change rate of median diameter>, and was classified into the following categories. In addition, the median diameter of the modified boron nitride particles in any of the Examples or Comparative Examples was 0.5 μm or more. A: The median diameter is 10 μm or more B: The median diameter is less than 10 μm

<壓縮破壞強度> 使用Shimadzu Corporation製的微小壓縮試驗機MCT-510進行壓縮試驗,並將所製造之凝聚狀之改質氮化硼粒子作為試樣進行了壓縮破壞強度的測量。壓縮試驗如下進行:示出在用壓頭向試樣施加負載時試樣破壞時的試驗力(mN)-位移(um)的圖,將位移成為恆定之試驗力(mN)設為破壞點P,並由以下式計算出破壞強度(MPa)。 A.               壓縮破壞強度(MPa)=(2.48P)/(3.14d2 ) d:粒徑 測量條件設為如下:壓頭=FLAT120、試驗力=20(mN)、負載速度=0.4462(mN/sec)、負載保持時間=5(sec)。 從所獲得之改質氮化硼粒子選出10個任意的凝聚狀粒子,並測量壓縮破壞強度,從而求出了其平均值。 再者,關於上述粒徑(d),從倍率200倍的SEM觀察圖像測量凝聚狀之改質氮化硼粒子的長軸的長度來求出。<Compression rupture strength> The compression test was performed using a micro-compression tester MCT-510 manufactured by Shimadzu Corporation, and the compressive rupture strength was measured using the produced agglomerated modified boron nitride particles as a sample. The compression test was performed as follows: a graph showing the test force (mN)-displacement (um) at the time of failure of the sample when a load was applied to the sample with an indenter, and the test force (mN) at which the displacement became constant was set as the failure point P , and calculate the breaking strength (MPa) from the following formula. A. Compressive failure strength (MPa)=(2.48P)/(3.14d 2 ) d: The particle size measurement conditions are set as follows: indenter=FLAT120, test force=20 (mN), load speed=0.4462 (mN/sec) ), load holding time = 5 (sec). Ten arbitrary aggregated particles were selected from the obtained modified boron nitride particles, the compressive fracture strength was measured, and the average value was obtained. In addition, the said particle diameter (d) was calculated|required by measuring the length of the long axis of the agglomerated modified boron nitride particle from the SEM observation image of a magnification of 200 times.

〔結果〕 在下述表中示出在各實施例或比較例中所製造之改質氮化硼粒子的特徵。 在表中,“名稱”一欄表示所製造之改質氮化硼粒子(亦包含表面修飾氮化硼粒子)的名稱。 “BN量”一欄表示在各實施例或比較例中製造改質氮化硼粒子時所使用之氮化硼粒子的量(g)。 “氧化劑”一欄中之“量”一欄表示在製造改質氮化硼粒子時所使用之氧化劑的量(g)。 “pH”一欄表示在水溶液中使氮化硼粒子與氧化劑接觸而使其改質時之上述水溶液的pH。例如,關於在實施例1中製造了改質氮化硼粒子1(BNa1)及表面修飾氮化硼粒子1(BN1)之情況,將NaOH水(NaOH:40g/水:400ml)、氮化硼粒子50g及過硫酸鈉水(過硫酸鈉:9.6g/水:100ml)混合而成之液體(水溶液)的pH的值示出“pH”一欄中。 “表面修飾劑種類”一欄表示在製造改質氮化硼粒子時所使用之表面修飾劑的種類。〔result〕 The following table shows the characteristics of the modified boron nitride particles produced in each Example or Comparative Example. In the table, the column of "name" indicates the name of the produced modified boron nitride particles (including surface-modified boron nitride particles). The column of "BN amount" indicates the amount (g) of the boron nitride particles used in the production of the modified boron nitride particles in each Example or Comparative Example. The column of "amount" in the column of "oxidant" indicates the amount (g) of the oxidant used in the production of modified boron nitride particles. The column of "pH" shows the pH of the above-mentioned aqueous solution when the boron nitride particles are brought into contact with an oxidizing agent in an aqueous solution for modification. For example, in the case where modified boron nitride particles 1 (BNa1) and surface-modified boron nitride particles 1 (BN1) were produced in Example 1, NaOH water (NaOH: 40 g/water: 400 ml), boron nitride The pH value of the liquid (aqueous solution) obtained by mixing 50 g of particles and sodium persulfate water (sodium persulfate: 9.6 g/water: 100 ml) is shown in the "pH" column. The column of "type of surface modifier" indicates the type of surface modifier used in the production of modified boron nitride particles.

[表1]   名稱 BN量 (g) 氧化劑 觸媒 種類 pH 表面修飾劑 種類 評價結果 種類 標準氧化還原電位 (V) 量 (g) 氧原子濃度 碳原子濃度 接觸角 D值 中值徑的變化率 中值徑 壓縮破壞強度 (MPa) 實施例1 BNa1 50 過硫酸鈉 2.01 9.6 - 14 - A C A A A A 3.5 BN1 50 過硫酸鈉 2.01 9.6 - 14 X12-984S A A A A A A 3.5 實施例2 BN2 50 過硫酸鈉 2.01 9.6 - 14 KBM-403 A B A A A A 3.5 實施例3 BN3 50 過硫酸鈉 2.01 9.6 - 14 YX7180BH40 A A A A A A 3.5 實施例4 BN4 50 過硫酸鈉 2.01 9.6 硫酸鐵 七水合物 14 X12-984S A A A A A A 3.5 實施例5 BN5 50 次氯酸鈉 五水合物 1.63 48 - 12 X12-984S A A B A A A 3.5 實施例6 BN6 50 硝酸鈰銨 1.74 9.6 - 14 X12-984S A A A A A A 3.5 實施例7 BN7 50 過硫酸鈉 2.01 48 - 14 X12-984S A A A A A A 3.5 實施例8 BN8 50 過硫酸鈉 2.01 9.6 - 13 X12-984S A A B A A A 3.5 實施例9 BN9 50 碘酸鈉 1.2 9.6 - 14 X12-984S A A B A A A 3.5 實施例10 BN10 10 過硫酸鈉 2.01 1.9 - 14 X12-984S A A A A C A 3.5 實施例11 BN11 50 過硫酸鈉 2.01 9.6 - 14 X12-984S A A A A A A 8.0 實施例12 BN12 50 過硫酸鈉 2.01 9.6 - 14 X12-984S A A A A A B - 比較例1 BNb1 50 過氧化氫 1.78 10 - 5 KBM-403 C C C A A A 3.5 比較例2 BNb2 50 過硫酸鈉 2.01 10 - 11 KBM-403 C C C A A A 3.5 比較例3 BNb3 50 無氧化劑及觸媒 (在高溫處理中使表面氧化) - KBM-403 A B A C A A 3.5 比較例4 BNb4 50 無氧化劑及觸媒 - KBM-403 C C C A A A 3.5 [Table 1] name Amount of BN (g) Oxidizer Type of catalyst pH Types of Surface Modifiers Evaluation results type Standard redox potential (V) Amount (g) Oxygen atomic concentration carbon concentration Contact angle D value rate of change of median diameter median diameter Compressive failure strength (MPa) Example 1 BNa1 50 Sodium Persulfate 2.01 9.6 - 14 - A C A A A A 3.5 BN1 50 Sodium Persulfate 2.01 9.6 - 14 X12-984S A A A A A A 3.5 Example 2 BN2 50 Sodium Persulfate 2.01 9.6 - 14 KBM-403 A B A A A A 3.5 Example 3 BN3 50 Sodium Persulfate 2.01 9.6 - 14 YX7180BH40 A A A A A A 3.5 Example 4 BN4 50 Sodium Persulfate 2.01 9.6 Iron sulfate heptahydrate 14 X12-984S A A A A A A 3.5 Example 5 BN5 50 Sodium hypochlorite pentahydrate 1.63 48 - 12 X12-984S A A B A A A 3.5 Example 6 BN6 50 Ceric Ammonium Nitrate 1.74 9.6 - 14 X12-984S A A A A A A 3.5 Example 7 BN7 50 Sodium Persulfate 2.01 48 - 14 X12-984S A A A A A A 3.5 Example 8 BN8 50 Sodium Persulfate 2.01 9.6 - 13 X12-984S A A B A A A 3.5 Example 9 BN9 50 Sodium iodate 1.2 9.6 - 14 X12-984S A A B A A A 3.5 Example 10 BN10 10 Sodium Persulfate 2.01 1.9 - 14 X12-984S A A A A C A 3.5 Example 11 BN11 50 Sodium Persulfate 2.01 9.6 - 14 X12-984S A A A A A A 8.0 Example 12 BN12 50 Sodium Persulfate 2.01 9.6 - 14 X12-984S A A A A A B - Comparative Example 1 BNb1 50 hydrogen peroxide 1.78 10 - 5 KBM-403 C C C A A A 3.5 Comparative Example 2 BNb2 50 Sodium Persulfate 2.01 10 - 11 KBM-403 C C C A A A 3.5 Comparative Example 3 BNb3 50 No oxidants and catalysts (surface oxidation during high temperature treatment) - KBM-403 A B A C A A 3.5 Comparative Example 4 BNb4 50 No oxidants and catalysts - KBM-403 C C C A A A 3.5

[實施例Y(組成物的製造及評價)] 使用上述改質氮化硼粒子來製備組成物(導熱材料形成用組成物),並進行了評價。 以下示出組成物的特徵及使用組成物實施之試驗方法等。[Example Y (Production and Evaluation of Composition)] A composition (composition for forming a thermally conductive material) was prepared and evaluated using the modified boron nitride particles described above. The characteristics of the composition and the test method and the like carried out using the composition are shown below.

〔各種成分〕 以下示出在實施例及比較例中所使用之各種成分。 <酚化合物> 以下示出在實施例及比較例中所使用之酚化合物。 再者,關於在實施例中所使用之酚化合物的A-1,參閱美國專利第4992596號說明書進行了合成。[various ingredients] Various components used in Examples and Comparative Examples are shown below. <Phenolic compound> Phenol compounds used in Examples and Comparative Examples are shown below. In addition, about A-1 of the phenolic compound used in an Example, it synthesize|combined with reference to the specification of US Pat. No. 4,992,596.

(A-2的合成方法) 關於作為酚化合物之A-2,按照下述方案進行了合成。(Synthesis method of A-2) About A-2 which is a phenolic compound, it synthesize|combined according to the following scheme.

[化學式10]

Figure 02_image019
[Chemical formula 10]
Figure 02_image019

將三聚氯化氰(160g,0.87mol)和2-丁酮(750ml)混合而成之混合液進行冰冷卻之後,一點一點添加了間胺基苯酚(294g,2.7mol)。之後,向上述混合液中添加了使乙酸鈉三水合物(237g,1.74mol)溶解於水(353ml)中而獲得之水溶液。將上述混合液在80℃下攪拌2小時之後,冷卻至室溫,向上述混合液中滴加使碳酸鈉(221g,2.09mol)溶解於水(1280ml)中而獲得之水溶液並攪拌了30分鐘。靜置上述混合液並去除水相之後,將有機相進行矽藻土過濾,並添加了321ml的乙醇。向所獲得之有機相中一邊攪拌一邊滴加水(4.1L),攪拌2小時之後,過濾收集所析出之結晶並進行乾燥,從而獲得了A-2。After ice-cooling a mixture of cyanuric chloride (160 g, 0.87 mol) and 2-butanone (750 ml), m-aminophenol (294 g, 2.7 mol) was added little by little. Then, an aqueous solution obtained by dissolving sodium acetate trihydrate (237 g, 1.74 mol) in water (353 ml) was added to the above-mentioned mixed solution. The above mixed solution was stirred at 80°C for 2 hours, cooled to room temperature, and an aqueous solution obtained by dissolving sodium carbonate (221 g, 2.09 mol) in water (1280 ml) was added dropwise to the above mixed solution, followed by stirring for 30 minutes. . After the above mixture was left to stand and the aqueous phase was removed, the organic phase was filtered through celite, and 321 ml of ethanol was added. Water (4.1 L) was added dropwise to the obtained organic phase with stirring, and after stirring for 2 hours, the precipitated crystals were collected by filtration and dried to obtain A-2.

(A-3的合成方法) 關於作為酚化合物之A-3,按照下述方案進行了合成。(Synthesis method of A-3) A-3, which is a phenolic compound, was synthesized according to the following scheme.

[化學式11]

Figure 02_image021
[Chemical formula 11]
Figure 02_image021

將三聚氯化氰(60g,0.325mol)和2-丁酮(480ml)混合而成之混合液進行冰冷卻之後,一點一點添加了間胺基苯酚(71g,0.65mol)。之後,向上述混合液中添加了使乙酸鈉三水合物(93g,0.68mol)溶解於水(240ml)中而獲得之水溶液。將上述混合液在45℃下攪拌3小時之後,冷卻至室溫,靜置並去除了水相。依序用1N鹽酸水200ml、10%食鹽水200ml清洗有機相之後,向有機層中添加硫酸鎂並進行了過濾。將所獲得之有機相利用蒸餾器進行溶劑蒸餾去除,將所獲得之結晶用己烷進行清洗並乾燥,從而獲得了A-3的中間體。After ice-cooling a mixture of cyanuric chloride (60 g, 0.325 mol) and 2-butanone (480 ml), m-aminophenol (71 g, 0.65 mol) was added little by little. Then, an aqueous solution obtained by dissolving sodium acetate trihydrate (93 g, 0.68 mol) in water (240 ml) was added to the above-mentioned mixed solution. After the above-mentioned mixed solution was stirred at 45°C for 3 hours, it was cooled to room temperature, and allowed to stand to remove the aqueous phase. After the organic phase was washed with 200 ml of 1N hydrochloric acid water and 200 ml of 10% brine in this order, magnesium sulfate was added to the organic layer, followed by filtration. The obtained organic phase was subjected to solvent distillation with a distiller, and the obtained crystal was washed with hexane and dried to obtain an intermediate of A-3.

向將A-3的中間體(11.4g,34.6mmol)和2-丁酮(53ml)混合而成之混合液中添加了間聯甲苯胺(3.5g,16.5mmol)。向上述混合液中添加水(27ml),並在80℃下攪拌2小時之後,冷卻至室溫。向上述混合液中滴加使碳酸鈉(2.8g,26.4mmol)溶解於水(16ml)中而獲得之水溶液並攪拌了30分鐘。靜置上述混合液並去除水相之後,將有機相進行了矽藻土濾過。將所獲得之有機相利用蒸餾器進行溶劑蒸餾去除,將所獲得之結晶用己烷進行清洗並乾燥,從而獲得了A-3。To a mixture of the intermediate A-3 (11.4 g, 34.6 mmol) and 2-butanone (53 ml) was added m-tolidine (3.5 g, 16.5 mmol). Water (27 ml) was added to the above-mentioned liquid mixture, and the mixture was stirred at 80° C. for 2 hours, and then cooled to room temperature. An aqueous solution obtained by dissolving sodium carbonate (2.8 g, 26.4 mmol) in water (16 ml) was added dropwise to the above mixed solution, followed by stirring for 30 minutes. After the above-mentioned mixed solution was left to stand and the aqueous phase was removed, the organic phase was filtered through celite. The obtained organic phase was removed by solvent distillation with a distiller, and the obtained crystal was washed with hexane and dried to obtain A-3.

(A-4的合成方法) 將A-2的間胺基苯酚變更為5-胺基-鄰甲酚,除此以外,藉由與A-2相同的手法合成了作為酚化合物之A-4。(Synthesis method of A-4) A-4, which is a phenolic compound, was synthesized by the same method as A-2 except that the m-aminophenol of A-2 was changed to 5-amino-o-cresol.

[化學式12]

Figure 02_image023
[Chemical formula 12]
Figure 02_image023

<環氧化合物> 以下示出在實施例及比較例中所使用之環氧化合物。<Epoxy compound> The epoxy compounds used in Examples and Comparative Examples are shown below.

[化學式13]

Figure 02_image025
[Chemical formula 13]
Figure 02_image025

<硬化促進劑> 以下示出在實施例及比較例中所使用之硬化促進劑。 “PPh3”:三苯基膦 “TOTP”:三鄰三膦 “TPP-MK”:四苯基鏻四-對三硼酸鹽<Hardening accelerator> The hardening accelerators used in Examples and Comparative Examples are shown below. "PPh3": triphenylphosphine "TOTP": tri-ortho-triphosphine "TPP-MK": Tetraphenylphosphonium tetra-p-triborate

<溶劑> 作為溶劑,使用了環戊酮。<Solvent> As a solvent, cyclopentanone was used.

<無機成分> 以下示出在實施例及比較例中所使用之無機成分。 “AA-3”:氧化鋁(平均粒徑:3μm、Sumitomo Chemical Co.,Ltd.製) “AA-04”:氧化鋁(平均粒徑:0.4μm、Sumitomo Chemical Co.,Ltd.製) “SP-3”:鱗片狀氮化硼(平均粒徑:4μm、Denka Company Limited製) “BNa1”、“BN1”、“BN2”、“BN3”、“BN4”、“BN5”、“BN6”、“BN7”、“BN8”、“BN9”、“BN10”、“BN11”、“BN12”、“BNb1”、“BNb2”、“BNb3”、“BNb4”:分別藉由上述方法所製造之改質氮化硼粒子 再者,“BNa1”及“BN1”~“BN12”為藉由本發明的方法所製造之本發明的改質氮化硼粒子。“BNb1”~“BNb4”為藉由除了本發明的方法以外的方法所製造之除了本發明的改質氮化硼粒子以外的改質氮化硼粒子。<Inorganic components> The inorganic components used in Examples and Comparative Examples are shown below. "AA-3": Alumina (average particle size: 3 μm, manufactured by Sumitomo Chemical Co., Ltd.) "AA-04": Alumina (average particle size: 0.4 μm, manufactured by Sumitomo Chemical Co., Ltd.) "SP-3": Scale-like boron nitride (average particle size: 4 μm, manufactured by Denka Company Limited) "BNa1", "BN1", "BN2", "BN3", "BN4", "BN5", "BN6", "BN7", "BN8", "BN9", "BN10", "BN11", "BN12" ", "BNb1", "BNb2", "BNb3", "BNb4": modified boron nitride particles produced by the above methods respectively In addition, "BNa1" and "BN1" - "BN12" are the modified boron nitride particles of the present invention produced by the method of the present invention. "BNb1" to "BNb4" are modified boron nitride particles other than the modified boron nitride particles of the present invention produced by methods other than the method of the present invention.

〔組成物的製備〕 製備了將下述表2所示之組合的環氧化合物和酚化合物以下述表2中所記載的添加量之比配合而成之混合體。 依序混合所獲得之混合體的總量、溶劑及硬化促進劑之後,添加了無機物。利用自轉公轉混合機(THINKY公司製、Awatori NetaroARE-310)對所獲得之混合物進行5分鐘的處理,從而獲得了各實施例或比較例的組成物(導熱材料形成用組成物)。 將各成分的混合比調整成最終獲得之組成物中之各成分的含量與總固體成分的配合比(質量%)成為如表2所示。[Preparation of composition] A mixture was prepared in which the epoxy compound and the phenol compound of the combination shown in the following Table 2 were blended in the ratio of the addition amount described in the following Table 2. After mixing the total amount of the obtained mixture, the solvent, and the hardening accelerator in this order, an inorganic substance was added. The obtained mixture was treated with an autorotation revolution mixer (Awatori NetaroARE-310, manufactured by Thinky Corporation) for 5 minutes to obtain a composition (a composition for forming a thermally conductive material) of each Example or Comparative Example. The mixing ratio of each component was adjusted so that the content of each component in the finally obtained composition and the mixing ratio (mass %) of the total solid content were as shown in Table 2.

其中,將溶劑的添加量設為組成物的固體成分濃度成為50~80質量%之量。 再者,關於組成物的固體成分濃度,在上述範圍內對每個組成物進行了調整,以使組成物的黏度分別達到相同程度。 無機物的添加量(無機氮化物與其他無機物的合計添加量)設為下述表2所示之添加量。 又,混合無機物以使各無機物的含量之比(質量比)滿足下述表2所示之關係,並進行使用。Here, the amount of the solvent added is set to an amount in which the solid content concentration of the composition is 50 to 80% by mass. In addition, regarding the solid content concentration of a composition, each composition was adjusted in the said range so that the viscosity of each composition might become the same degree. The addition amount of the inorganic substance (the total addition amount of the inorganic nitride and other inorganic substances) was set as the addition amount shown in Table 2 below. Moreover, inorganic substances were mixed so that the content ratio (mass ratio) of each inorganic substance satisfies the relationship shown in the following Table 2, and was used.

〔評價〕 藉由以下所示之方法,對組成物進行了評價。〔evaluate〕 The composition was evaluated by the method shown below.

<導熱片的製作> 使用塗敷器,將所製備之下述表2中所記載的各實施例或比較例的組成物均勻地塗佈於經脫模處理之聚酯薄膜(NP-100A PANAC Co.,Ltd.製、膜厚100μm)的脫模面上,並在120℃下放置5分鐘,從而獲得了半硬化片(半硬化膜)。 在空氣下藉由熱壓(以熱板溫度180℃且壓力20MPa及進行5分鐘的處理之後,進一步在常壓下以180℃處理90分鐘)對所獲得之半硬化片進行處理而使塗膜硬化,從而獲得了樹脂片。從樹脂片剝離聚酯薄膜,從而獲得了平均膜厚120μm的導熱片(導熱材料)。<Production of thermally conductive sheet> Using an applicator, the prepared compositions of each Example or Comparative Example described in Table 2 below were uniformly coated on a release-treated polyester film (NP-100A, manufactured by PANAC Co., Ltd.). , film thickness of 100 μm) on the mold release surface, and left at 120° C. for 5 minutes to obtain a semi-hardened sheet (semi-hardened film). The obtained semi-hardened sheet was treated under air by hot pressing (after treatment at a hot plate temperature of 180° C. and a pressure of 20 MPa for 5 minutes, and further at 180° C. under normal pressure for 90 minutes) to make a coating film. hardened, thereby obtaining a resin sheet. The polyester film was peeled off from the resin sheet to obtain a thermally conductive sheet (thermally conductive material) having an average film thickness of 120 μm.

<導熱性> 利用使用各組成物所獲得之每個導熱片實施了導熱性評價。藉由下述方法進行導熱率的測量,並按照下述基準評價了導熱性。<Thermal conductivity> Thermal conductivity evaluation was performed using each thermally conductive sheet obtained using each composition. The thermal conductivity was measured by the following method, and the thermal conductivity was evaluated according to the following criteria.

(導熱率(W/m・k)的測量) (1)使用NETZSCH公司製的“LFA467”,並藉由雷射閃光法測量了導熱片的厚度方向上的熱擴散率。 (2)使用METTLER TOLEDO公司製的天秤“XS204”,並藉由阿基米德法(使用“固體比重測量套組”)測量了導熱片的比重。 (3)使用Seiko Instruments Inc.製的“DSC320/6200”,在10℃/分鐘的升溫條件下,求出了25℃下之導熱片的比熱。 (4)所獲得之熱擴散率乘以比重及比熱,藉此計算出導熱片的導熱率。(Measurement of thermal conductivity (W/m・k)) (1) Using "LFA467" manufactured by NETZSCH, the thermal diffusivity in the thickness direction of the thermally conductive sheet was measured by a laser flash method. (2) Using the balance "XS204" manufactured by METTLER TOLEDO, the specific gravity of the thermally conductive sheet was measured by the Archimedes method (using the "solid specific gravity measurement kit"). (3) Using "DSC320/6200" manufactured by Seiko Instruments Inc., the specific heat of the thermally conductive sheet at 25°C was determined under a temperature increase condition of 10°C/min. (4) The obtained thermal diffusivity is multiplied by the specific gravity and the specific heat to calculate the thermal conductivity of the thermally conductive sheet.

(評價基準) 將使用各組成物所獲得之評價對象的導熱片的導熱率與使用將在各組成物中所使用之改質氮化硼粒子替換為未處理的氮化硼粒子之對照用組成物而形成之對照用導熱片的導熱率進行了比較。以對照用導熱片的導熱率為基準,對於評價對象的導熱片的導熱率如何變化,按照下述基準進行分類並作為導熱性的評價。 再者,在各組成物中所使用之未處理的氮化硼粒子是指,在使用了BN11作為改質氮化硼粒子之情況下為在實施例11中所使用之氮化硼粒子B,在使用了BN12之情況下為在實施例12中所使用之氮化硼粒子C,在使用了除此以外的改質氮化硼粒子之情況下為氮化硼粒子A。 “A”:1.5W/mK以上的增加 “B”:0.5W/mK以上且小於1.5W/mK的增加 “C”:不變或小於0.5W/mK的增加 “D”:減少(Evaluation Criteria) The thermal conductivity of the thermally conductive sheet of the evaluation object obtained by using each composition and the composition for comparison in which the modified boron nitride particles used in each composition were replaced with untreated boron nitride particles were used. The thermal conductivity of the control thermally conductive sheet was compared. Based on the thermal conductivity of the thermally conductive sheet for comparison, how the thermal conductivity of the thermally conductive sheet to be evaluated changes was classified according to the following criteria to evaluate the thermal conductivity. In addition, the untreated boron nitride particles used in the respective compositions refers to the boron nitride particles B used in Example 11 when BN11 was used as the modified boron nitride particles, When BN12 was used, the boron nitride particles C used in Example 12 were used, and when other modified boron nitride particles were used, the boron nitride particles A were used. "A": increase above 1.5W/mK "B": 0.5W/mK or more and less than 1.5W/mK increase "C": no change or an increase of less than 0.5W/mK "D": decrease

<剝離強度試驗> 從藉由上述<導熱片的製作>中所示出之方法所製作之附聚酯薄膜的半硬化片剝離聚酯薄膜,將所獲得之半硬化片切割成20mm×60mm的條狀,並將其夾在作為黏附體之電解銅箔(20mm×100mm、厚度:35μm)與鋁板(30mm×60mm、厚度:1mm)之間。在空氣下對所獲得之積層體進行熱加壓處理(以熱板溫度180℃且壓力20MPa進行5分鐘的處理之後,在熱板溫度180℃且常壓下進行90分鐘的處理),從而獲得了導熱片與黏附體一體形成之附銅箔的鋁基材基板。 使用數位測力計(ZTS-200N、IMADA Co.,Ltd.製)和90度剝離試驗治具(P90-200N-BB、IMADA Co.,Ltd.製),並按照JIS C 6481中所記載的正常條件下的剝離強度的測量方法測量了所獲得之樣本的銅箔剝離強度。關於剝離強度試驗中之銅箔的剝離,相對於附銅箔的鋁基材基板,以90°的角度且50mm/分鐘的剝離速度實施。 再者,進行了剝離強度試驗時的試驗體的破壞的形態均為在導熱片層中的凝聚破壞。<Peel Strength Test> The polyester film was peeled off from the polyester film-attached semi-hardened sheet produced by the method shown in the above-mentioned <Production of Thermally Conductive Sheet>, the obtained semi-hardened sheet was cut into strips of 20 mm×60 mm, and the It is sandwiched between an electrolytic copper foil (20mm×100mm, thickness: 35μm) as an adherend and an aluminum plate (30mm×60mm, thickness: 1mm). The obtained laminate was subjected to hot press treatment under air (after treatment at a hot plate temperature of 180° C. and a pressure of 20 MPa for 5 minutes, followed by a treatment at a hot plate temperature of 180° C. and normal pressure for 90 minutes) to obtain A copper foil-attached aluminum substrate is formed integrally with a thermally conductive sheet and an adhesive body. Using a digital force gauge (ZTS-200N, manufactured by IMADA Co., Ltd.) and a 90-degree peel test fixture (P90-200N-BB, manufactured by IMADA Co., Ltd.) Measurement method of peel strength under normal conditions The copper foil peel strength of the obtained samples was measured. The peeling of the copper foil in the peel strength test was performed at an angle of 90° and a peeling speed of 50 mm/min with respect to the aluminum base substrate with copper foil. In addition, when the peeling strength test was performed, the form of the failure of the test body was the aggregation failure in the thermally conductive sheet layer.

(剝離強度評價基準) 從藉由上述方法所測量之銅箔剝離強度,基於以下基準對導熱片的剝離強度進行了評價。 將利用使用各組成物所獲得之半硬化片所製作之評價對象的附銅箔的鋁基材基板上之銅箔剝離強度與使用半硬化片所製作之對照用附銅箔的鋁基材基板上之銅箔剝離強度進行了比較,該半硬化片使用將在各組成物中所使用之改質氮化硼粒子替換為未處理的氮化硼粒子之對照用組成物而獲得。以對照用附銅箔的鋁基材基板上之銅箔剝離強度為基準,對於評價對象的附銅箔的鋁基材基板上之銅箔剝離強度如何變化,按照下述基準進行分類並作為剝離強度的評價。 “A+”:2.0N/cm以上的增加 “A”:1.5N/cm以上且小於2.0N/cm的增加 “B”:0.5N/cm以上且小於1.5N/cm的增加 “C”:不變或小於0.5N/cm的增加 “D”:減少(Peel Strength Evaluation Criteria) From the peeling strength of the copper foil measured by the above method, the peeling strength of the thermally conductive sheet was evaluated based on the following criteria. The peeling strength of copper foil on the aluminum base substrate with copper foil, which is the evaluation object, produced by using the semi-hardened sheet obtained by each composition was compared with that of the aluminum base substrate with copper foil for comparison, which was produced by using the semi-hardened sheet. The above copper foil peel strength was compared, and the semi-hardened sheet was obtained using a control composition in which the modified boron nitride particles used in each composition were replaced with untreated boron nitride particles. Based on the peel strength of copper foil on the aluminum base substrate with copper foil for comparison, how the peel strength of copper foil on the aluminum base substrate with copper foil attached to the evaluation object changes is classified according to the following criteria and used as peeling Strength evaluation. "A+": increase above 2.0N/cm "A": 1.5N/cm or more and less than 2.0N/cm increase "B": 0.5N/cm or more and less than 1.5N/cm increase "C": no change or an increase of less than 0.5N/cm "D": decrease

〔結果〕 將各實施例或比較例的組成物的固體成分配合及評價的結果示於下述表2中。 在表中,“量(%)”一欄表示相對於組成物的總固體成分之各成分的含量(質量%)。〔result〕 Table 2 below shows the results of blending and evaluating the solid content of the compositions of the Examples or Comparative Examples. In the table, the column of "amount (%)" indicates the content (mass %) of each component with respect to the total solid content of the composition.

[表2]   組成物的固體成分配合 評價 酚化合物 環氧化合物 硬化促進劑 無機物 導熱率 剝離強度 種類 量 (%) 種類 量 (%) 種類 量 (%) 在無機物內的 質量比 量 (%) 實施例13 A-2 12.73 B-1 11.11 PPh3 0.16 僅BN1 76.00 A A 實施例14 A-2 12.73 B-1 11.11 PPh3 0.16 僅BN2 76.00 A A 實施例15 A-2 12.73 B-1 11.11 PPh3 0.16 僅BN3 76.00 A A 實施例16 A-2 12.73 B-1 11.11 PPh3 0.16 僅BN4 76.00 A A 實施例17 A-2 12.73 B-1 11.11 PPh3 0.16 僅BN5 76.00 B B 實施例18 A-2 12.73 B-1 11.11 PPh3 0.16 僅BN6 76.00 A A 實施例19 A-2 12.73 B-1 11.11 PPh3 0.16 僅BN7 76.00 A A 實施例20 A-2 12.73 B-1 11.11 PPh3 0.16 僅BN8 76.00 B B 實施例21 A-2 12.73 B-1 11.11 PPh3 0.16 僅BN9 76.00 B B 實施例22 A-2 12.73 B-1 11.11 PPh3 0.16 僅BN10 76.00 C A 實施例23 A-2 12.73 B-1 11.11 PPh3 0.16 僅BN11 76.00 C A 實施例24 A-2 12.73 B-1 11.11 PPh3 0.16 僅BNa1 76.00 B B 實施例25 A-1 9.00 B-1 14.84 PPh3 0.16 僅BN1 76.00 A A 實施例26 A-1 6.99 B-2 16.85 PPh3 0.16 僅BN1 76.00 A A 實施例27 A-1 6.49 B-3 17.35 PPh3 0.16 僅BN1 76.00 A A 實施例28 A-2 10.47 B-2 13.37 PPh3 0.16 僅BN1 76.00 A A 實施例29 A-2 9.86 B-3 13.98 PPh3 0.16 僅BN1 76.00 A A 實施例30 A-3 15.04 B-1 8.80 PPh3 0.16 僅BN1 76.00 A A 實施例31 A-3 12.85 B-2 10.99 PPh3 0.16 僅BN1 76.00 A A 實施例32 A-3 12.23 B-3 11.61 PPh3 0.16 僅BN1 76.00 A A 實施例33 A-4 13.31 B-1 10.53 PPh3 0.16 僅BN1 76.00 A A 實施例34 A-4 11.06 B-2 12.78 PPh3 0.16 僅BN1 76.00 A A 實施例35 A-4 10.44 B-3 13.40 PPh3 0.16 僅BN1 76.00 A A 實施例36 A-2 12.19 B-1 10.65 PPh3 0.16 BN1/AA-3/AA-04 =84/11/5 77.00 A A 實施例37 A-2 11.66 B-1 10.18 PPh3 0.16 BN1/AA-3/AA-04 =77/16/7 78.00 A A 實施例38 A-2 11.13 B-1 9.71 PPh3 0.16 BN1/AA-3/AA-04 =70/21/9 79.00 A A 實施例39 A-2 10.59 B-1 9.25 PPh3 0.16 BN1/AA-3/AA-04 =58/29/13 80.00 A A 實施例40 A-2 12.73 B-1 11.11 PPh3 0.16 BN1/SP-3 =99/1 76.00 A A 實施例41 A-2 12.73 B-1 11.11 PPh3 0.16 BN1/SP-3 =95/5 76.00 A A 實施例42 A-2 12.73 B-1 11.11 PPh3 0.16 BN1/SP-3 =90/10 76.00 A A 實施例43 A-2 12.73 B-1 11.11 PPh3 0.16 BN1/BN12 =90/10 76.00 A A 實施例44 A-2 12.73 B-1 11.11 PPh3 0.16 BN1/SP-3 =85/15 76.00 A A 實施例45 A-2 10.47 B-2 13.37 TOTP 0.16 僅BN1 76.00 A A 實施例46 A-2 10.47 B-2 13.37 TPP-MK 0.16 僅BN1 76.00 A A+ 比較例5 A-2 12.73 B-1 11.11 PPh3 0.16 BNb1 76.00 C C 比較例6 A-2 12.73 B-1 11.11 PPh3 0.16 BNb2 76.00 C C 比較例7 A-2 12.73 B-1 11.11 PPh3 0.16 BNb3 76.00 D D 比較例8 A-2 12.73 B-1 11.11 PPh3 0.16 BNb4 76.00 C C [Table 2] Composition of the solid content of the composition evaluate Phenolic compounds epoxy compound hardening accelerator Inorganic Thermal conductivity peel strength type quantity(%) type quantity(%) type quantity(%) mass ratio in inorganic matter quantity(%) Example 13 A-2 12.73 B-1 11.11 PPh3 0.16 BN1 only 76.00 A A Example 14 A-2 12.73 B-1 11.11 PPh3 0.16 BN2 only 76.00 A A Example 15 A-2 12.73 B-1 11.11 PPh3 0.16 BN3 only 76.00 A A Example 16 A-2 12.73 B-1 11.11 PPh3 0.16 BN4 only 76.00 A A Example 17 A-2 12.73 B-1 11.11 PPh3 0.16 BN5 only 76.00 B B Example 18 A-2 12.73 B-1 11.11 PPh3 0.16 BN6 only 76.00 A A Example 19 A-2 12.73 B-1 11.11 PPh3 0.16 BN7 only 76.00 A A Example 20 A-2 12.73 B-1 11.11 PPh3 0.16 BN8 only 76.00 B B Example 21 A-2 12.73 B-1 11.11 PPh3 0.16 BN9 only 76.00 B B Example 22 A-2 12.73 B-1 11.11 PPh3 0.16 BN10 only 76.00 C A Example 23 A-2 12.73 B-1 11.11 PPh3 0.16 BN11 only 76.00 C A Example 24 A-2 12.73 B-1 11.11 PPh3 0.16 BNa1 only 76.00 B B Example 25 A-1 9.00 B-1 14.84 PPh3 0.16 BN1 only 76.00 A A Example 26 A-1 6.99 B-2 16.85 PPh3 0.16 BN1 only 76.00 A A Example 27 A-1 6.49 B-3 17.35 PPh3 0.16 BN1 only 76.00 A A Example 28 A-2 10.47 B-2 13.37 PPh3 0.16 BN1 only 76.00 A A Example 29 A-2 9.86 B-3 13.98 PPh3 0.16 BN1 only 76.00 A A Example 30 A-3 15.04 B-1 8.80 PPh3 0.16 BN1 only 76.00 A A Example 31 A-3 12.85 B-2 10.99 PPh3 0.16 BN1 only 76.00 A A Example 32 A-3 12.23 B-3 11.61 PPh3 0.16 BN1 only 76.00 A A Example 33 A-4 13.31 B-1 10.53 PPh3 0.16 BN1 only 76.00 A A Example 34 A-4 11.06 B-2 12.78 PPh3 0.16 BN1 only 76.00 A A Example 35 A-4 10.44 B-3 13.40 PPh3 0.16 BN1 only 76.00 A A Example 36 A-2 12.19 B-1 10.65 PPh3 0.16 BN1/AA-3/AA-04 =84/11/5 77.00 A A Example 37 A-2 11.66 B-1 10.18 PPh3 0.16 BN1/AA-3/AA-04 =77/16/7 78.00 A A Example 38 A-2 11.13 B-1 9.71 PPh3 0.16 BN1/AA-3/AA-04 =70/21/9 79.00 A A Example 39 A-2 10.59 B-1 9.25 PPh3 0.16 BN1/AA-3/AA-04 =58/29/13 80.00 A A Example 40 A-2 12.73 B-1 11.11 PPh3 0.16 BN1/SP-3 =99/1 76.00 A A Example 41 A-2 12.73 B-1 11.11 PPh3 0.16 BN1/SP-3 =95/5 76.00 A A Example 42 A-2 12.73 B-1 11.11 PPh3 0.16 BN1/SP-3 =90/10 76.00 A A Example 43 A-2 12.73 B-1 11.11 PPh3 0.16 BN1/BN12 =90/10 76.00 A A Example 44 A-2 12.73 B-1 11.11 PPh3 0.16 BN1/SP-3 =85/15 76.00 A A Example 45 A-2 10.47 B-2 13.37 TOTP 0.16 BN1 only 76.00 A A Example 46 A-2 10.47 B-2 13.37 TPP-MK 0.16 BN1 only 76.00 A A+ Comparative Example 5 A-2 12.73 B-1 11.11 PPh3 0.16 BNb1 76.00 C C Comparative Example 6 A-2 12.73 B-1 11.11 PPh3 0.16 BNb2 76.00 C C Comparative Example 7 A-2 12.73 B-1 11.11 PPh3 0.16 BNb3 76.00 D D Comparative Example 8 A-2 12.73 B-1 11.11 PPh3 0.16 BNb4 76.00 C C

依據表所示之結果,確認到只要使用包含本發明的改質氮化硼粒子之組成物,則可以獲得導熱性及剝離強度優異之導熱材料。From the results shown in the table, it was confirmed that a thermally conductive material excellent in thermal conductivity and peel strength can be obtained by using the composition containing the modified boron nitride particles of the present invention.

其中,確認到在改質氮化硼粒子為作為表面修飾氮化硼粒子之改質氮化硼粒子之情況下,本發明的效果更加優異(參閱實施例13、實施例24的結果的比較等)。 確認到在改質氮化硼粒子的表面上之碳原子濃度超過3.0atom%之情況下,本發明的效果更加優異(參閱實施例13、實施例24的結果的比較等)。Among them, it was confirmed that the effect of the present invention is more excellent when the modified boron nitride particles are modified boron nitride particles as surface modified boron nitride particles (see the comparison of the results of Example 13 and Example 24, etc. ). It was confirmed that when the carbon atom concentration on the surface of the modified boron nitride particles exceeds 3.0 atom%, the effect of the present invention is more excellent (see the comparison of the results of Example 13 and Example 24, etc.).

確認到在用於改質氮化硼粒子的製造中之氧化劑的標準氧化還原電位為1.50V以上之情況下,本發明的效果更加優異(參閱實施例13、實施例21的結果的比較等)。 確認到在製造改質氮化硼粒子時,在超過pH13的水溶液中使氮化硼粒子與氧化劑接觸之情況下,本發明的效果更加優異(參閱實施例13、實施例17、實施例20的結果的比較等)。 確認到在改質氮化硼粒子與水的接觸角小於75°之情況下,本發明的效果更加優異(參閱實施例13、實施例17、實施例20、實施例21的結果的比較等)。It was confirmed that the effect of the present invention is more excellent when the standard redox potential of the oxidizing agent used in the production of modified boron nitride particles is 1.50 V or more (refer to the comparison of the results of Example 13 and Example 21, etc.) . It was confirmed that the effect of the present invention is more excellent when the boron nitride particles are brought into contact with an oxidizing agent in an aqueous solution exceeding pH 13 in the production of modified boron nitride particles (refer to Example 13, Example 17, and Example 20). comparison of results, etc.). It was confirmed that the effect of the present invention is more excellent when the contact angle between the modified boron nitride particles and water is less than 75° (refer to the comparison of the results of Example 13, Example 17, Example 20, and Example 21, etc.) .

確認到在製造改質氮化硼粒子時,在中值徑的變化率小於10%之情況下,本發明的效果更加優異(參閱實施例13、實施例22的結果的比較等)。It was confirmed that the effect of the present invention is more excellent when the change rate of the median diameter in the production of modified boron nitride particles is less than 10% (refer to the comparison of the results of Example 13 and Example 22, etc.).

確認到在改質氮化硼粒子的壓縮破壞強度為5.0MPa以下之情況下,本發明的效果更加優異(參閱實施例13、實施例23的結果的比較等)。It was confirmed that when the compressive fracture strength of the modified boron nitride particles is 5.0 MPa or less, the effect of the present invention is more excellent (see the comparison of the results of Example 13 and Example 23, etc.).

無。without.

Claims (22)

一種改質氮化硼粒子的製造方法,其係包括改質步驟,前述改質步驟在pH12以上的水溶液中使氮化硼粒子與氧化劑接觸而獲得改質氮化硼粒子。A method for producing modified boron nitride particles, comprising a modification step of contacting the boron nitride particles with an oxidizing agent in an aqueous solution of pH 12 or higher to obtain modified boron nitride particles. 如請求項1所述之改質氮化硼粒子的製造方法,其中, 前述水溶液的pH超過13。The method for producing modified boron nitride particles according to claim 1, wherein: The pH of the aforementioned aqueous solution exceeds 13. 如請求項1或請求項2所述之改質氮化硼粒子的製造方法,其中, 前述氧化劑的標準氧化還原電位為1.50V以上。The method for producing modified boron nitride particles according to claim 1 or claim 2, wherein, The standard redox potential of the aforementioned oxidizing agent is 1.50V or more. 如請求項1或請求項2所述之改質氮化硼粒子的製造方法,其中, 前述氧化劑為過硫酸鹽。The method for producing modified boron nitride particles according to claim 1 or claim 2, wherein, The aforementioned oxidizing agent is persulfate. 如請求項1或請求項2所述之改質氮化硼粒子的製造方法,其中, 由下述式求出之中值徑的變化率小於10%, 式:中值徑的變化率(%)=〔1-(所製造之改質氮化硼粒子的中值徑)/(改質氮化硼粒子的製造中所使用之氮化硼粒子的中值徑)〕×100。The method for producing modified boron nitride particles according to claim 1 or claim 2, wherein, The change rate of the median diameter is less than 10% calculated from the following formula, Formula: Change rate of median diameter (%)=[1-(median diameter of modified boron nitride particles produced)/(median of boron nitride particles used in the production of modified boron nitride particles) value diameter)] × 100. 如請求項1或請求項2所述之改質氮化硼粒子的製造方法,其係包括吸附步驟,前述吸附步驟在水及有機溶劑中的至少一者的存在下,使在前述改質步驟中所獲得之前述改質氮化硼粒子與表面修飾劑接觸而獲得由前述表面修飾劑修飾之改質氮化硼粒子。The method for producing modified boron nitride particles according to claim 1 or claim 2, comprising an adsorption step, wherein the adsorption step is performed in the modification step in the presence of at least one of water and an organic solvent The aforementioned modified boron nitride particles obtained in the above-mentioned modified boron nitride particles are contacted with a surface modification agent to obtain modified boron nitride particles modified with the aforementioned surface modification agent. 一種改質氮化硼粒子,其藉由X射線光電子能譜分析而檢測之表面上之氧原子濃度超過5.0atom%,與水的接觸角為90°以下,並且由下述式(1)求出之D值為0.010以下, 式(1):D值=B(OH)3 (002)/BN(002), B(OH)3 (002):來自於藉由X射線衍射而測量之具有三斜晶系空間群組之氫氧化硼的(002)面之峰值強度, BN(002):來自於藉由X射線衍射而測量之具有六方晶系空間群組之氮化硼的(002)面之峰值強度。A modified boron nitride particle, the oxygen atomic concentration on the surface detected by X-ray photoelectron spectroscopy analysis exceeds 5.0 atom%, the contact angle with water is 90° or less, and is obtained by the following formula (1) The obtained D value is 0.010 or less, formula (1): D value=B(OH) 3 (002)/BN(002), B(OH) 3 (002): obtained from the measurement by X-ray diffraction Peak intensity of the (002) plane of boron hydroxide of triclinic space group, BN(002): (002) from boron nitride with hexagonal space group measured by X-ray diffraction The peak intensity of the surface. 如請求項7所述之改質氮化硼粒子,其中, 藉由X射線光電子能譜分析而檢測之表面上之碳原子濃度超過3.0atom%。The modified boron nitride particles according to claim 7, wherein, The concentration of carbon atoms on the surface detected by X-ray photoelectron spectroscopy was over 3.0 atom%. 如請求項8所述之改質氮化硼粒子,其中, 前述碳原子濃度為6.0atom%以上。The modified boron nitride particles according to claim 8, wherein, The aforementioned carbon atom concentration is 6.0 atom% or more. 如請求項7至請求項9之任一項所述之改質氮化硼粒子,其中, 前述D值為0.007以下。The modified boron nitride particles according to any one of claim 7 to claim 9, wherein, The aforementioned D value is 0.007 or less. 如請求項7至請求項9之任一項所述之改質氮化硼粒子,其為凝聚狀的粒子。The modified boron nitride particles according to any one of claim 7 to claim 9, which are aggregated particles. 如請求項11所述之改質氮化硼粒子,其中, 壓縮破壞強度為5.0MPa以下。The modified boron nitride particles according to claim 11, wherein, The compressive rupture strength is 5.0 MPa or less. 如請求項7至請求項9之任一項所述之改質氮化硼粒子,其中, 中值徑為10μm以上。The modified boron nitride particles according to any one of claim 7 to claim 9, wherein, The median diameter is 10 μm or more. 一種導熱材料形成用組成物,其係包含: 藉由如請求項1至請求項6之任一項所述之改質氮化硼粒子的製造方法所獲得之改質氮化硼粒子及作為如請求項7至請求項13之任一項所述之改質氮化硼粒子中的任一種之改質氮化硼粒子;及 樹脂黏合劑或其前驅物。A composition for forming a thermally conductive material, comprising: The modified boron nitride particles obtained by the method for producing modified boron nitride particles according to any one of claim 1 to claim 6, and the modified boron nitride particles as claimed in any one of claim 7 to claim 13 A modified boron nitride particle of any of the modified boron nitride particles described above; and Resin binders or their precursors. 如請求項14所述之導熱材料形成用組成物,其中, 前述樹脂黏合劑或其前驅物包含環氧化合物。The composition for forming a thermally conductive material according to claim 14, wherein, The aforementioned resin binder or its precursor contains an epoxy compound. 如請求項14或請求項15所述之導熱材料形成用組成物,其中, 前述樹脂黏合劑或其前驅物包含環氧化合物及酚化合物。The composition for forming a thermally conductive material according to claim 14 or claim 15, wherein, The aforementioned resin binder or its precursor includes an epoxy compound and a phenol compound. 如請求項14或請求項15所述之導熱材料形成用組成物,其還包含硬化促進劑。The composition for forming a thermally conductive material according to claim 14 or claim 15, further comprising a hardening accelerator. 如請求項17所述之導熱材料形成用組成物,其中, 前述硬化促進劑包括包含磷原子之化合物。The composition for forming a thermally conductive material according to claim 17, wherein, The aforementioned hardening accelerators include compounds containing phosphorus atoms. 如請求項17所述之導熱材料形成用組成物,其中, 前述硬化促進劑包含鏻鹽。The composition for forming a thermally conductive material according to claim 17, wherein, The aforementioned hardening accelerator contains a phosphonium salt. 一種導熱材料,其係使如請求項14至請求項19之任一項所述之導熱材料形成用組成物硬化而獲得。A thermally conductive material obtained by hardening the composition for forming a thermally conductive material according to any one of Claims 14 to 19. 一種導熱片,其係由如請求項20所述之導熱材料形成。A thermally conductive sheet is formed of the thermally conductive material as described in claim 20. 一種附導熱層的元件,其係具有元件及配置於前述元件上且包含如請求項21所述之導熱片之導熱層。An element with a thermally conductive layer, which has an element and a thermally conductive layer disposed on the aforementioned element and comprising the thermally conductive sheet described in claim 21.
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