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TW202131070A - Direct type backlight device - Google Patents

Direct type backlight device Download PDF

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Publication number
TW202131070A
TW202131070A TW109103483A TW109103483A TW202131070A TW 202131070 A TW202131070 A TW 202131070A TW 109103483 A TW109103483 A TW 109103483A TW 109103483 A TW109103483 A TW 109103483A TW 202131070 A TW202131070 A TW 202131070A
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Taiwan
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reflective
light
area
emitting
bumps
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TW109103483A
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Chinese (zh)
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劉古煥
楊凱翔
巫季霖
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云光科技股份有限公司
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Priority to TW109103483A priority Critical patent/TW202131070A/en
Publication of TW202131070A publication Critical patent/TW202131070A/en

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Abstract

The invention discloses a direct type backlight device comprises a light source base and a reflective sheet. The light source base comprises a plurality of reflection cup structures. Each of reflection cup comprises a reflection cavity. A plurality of light emitting units are arranged in the plurality of reflection cavity. The reflection sheet is arranged on the side of the light source base. The reflection sheet comprises a plurality of reflective regions. Each of the reflective regions is facing one of the reflection cavity. A plurality of reflection bumps formed on each of the reflective regions. In each of the reflective regions, the plurality of reflective bumps are arranged densely in the area close to the center of the reflective region. In each of the reflective regions, the plurality of reflective bumps are arranged discretely in the area close to the center of the reflective region. Each of the reflection cavity is used to reflect the light emitted by the light emitting unit of the light source base. The invention has better uniform performance then the known technology.

Description

直下式背光裝置Direct type backlight device

本發明涉及一種背光裝置,特別是一種直下式背光裝置。The invention relates to a backlight device, in particular to a direct type backlight device.

現有大型顯示裝置(例如是電視等)的光源模組,大致可區分為側光式及直下式,直下式背光模組相對於側光式背光模組具有更好的色彩表現,因此,直下式背光模組為近年來相關廠商主要開發的技術之一。然,現有的直下式背光模組容易發生各區域的亮度不一致的問題。The light source modules of existing large-scale display devices (such as TVs) can be roughly divided into edge-lit type and direct-lit type. Direct-lit backlight modules have better color performance than edge-lit backlight modules. Therefore, the direct-lit type The backlight module is one of the main technologies developed by related manufacturers in recent years. However, the existing direct-lit backlight module is prone to the problem of inconsistency in the brightness of each area.

本發明公開一種直下式背光裝置,主要用以改善現有技術中,直下式背光裝置容易發生暗區、亮區的問題。The invention discloses a direct type backlight device, which is mainly used to improve the problems of dark and bright areas in the direct type backlight device in the prior art.

本發明的其中一實施例公開一種直下式背光裝置,其包含:一光源座及一反射片體。光源座包含:一電路板、多個反射杯結構及多個發光單元。多個反射杯結構固定設置於電路板的一側,各個反射杯結構由遠離電路板的一側向靠近電路板的一側內凹形成有一反射腔。各個發光單元固定設置於電路板,且多個發光單元對應位於多個反射腔中,各個發光單元具有一頂發光面及一環發光面,頂發光面的周緣與環發光面相連接,發光單元由頂發光面的光通量低於發光單元由環發光面所發出的光通量。反射片體定義有多個反射區域,反射片體設置於光源座的上方,且各個反射區域對應位於各個反射杯結構的正上方。反射片體包含:一基材及多組光學結構。多組光學結構形成於基材的一寬側面,各組光學結構對應位於各個反射區域內,且各組光學結構包含多個反射凸點,各個反射凸點能反射光源座所發出的光束;於各個反射區域內的多個反射凸點,越鄰近於反射區域的中心越密集地排列,越遠離反射區域的中心則越分散地設置;其中,形成各個反射腔的側壁為一反射面,各個反射腔的反射面,能反射相對應的發光單元所發出的部份光束。One embodiment of the present invention discloses a direct type backlight device, which includes: a light source base and a reflective sheet body. The light source base includes: a circuit board, a plurality of reflective cup structures and a plurality of light-emitting units. A plurality of reflecting cup structures are fixedly arranged on one side of the circuit board, and each reflecting cup structure is recessed to form a reflecting cavity from the side far away from the circuit board to the side close to the circuit board. Each light-emitting unit is fixedly arranged on the circuit board, and multiple light-emitting units are correspondingly located in multiple reflecting cavities. Each light-emitting unit has a top light-emitting surface and a ring light-emitting surface. The periphery of the top light-emitting surface is connected with the ring light-emitting surface. The luminous flux of the luminous surface is lower than the luminous flux of the luminous unit from the annular luminous surface. The reflection sheet body is defined with a plurality of reflection areas, the reflection sheet body is arranged above the light source seat, and each reflection area is correspondingly located directly above each reflection cup structure. The reflective sheet body includes: a substrate and multiple sets of optical structures. Multiple groups of optical structures are formed on a wide side of the substrate, and each group of optical structures is correspondingly located in each reflection area, and each group of optical structures includes a plurality of reflective convex points, and each reflective convex point can reflect the light beam emitted by the light source seat; The multiple reflective bumps in each reflective area are arranged densely as they are closer to the center of the reflective area, and arranged more dispersedly as they are farther away from the center of the reflective area; wherein the sidewall forming each reflective cavity is a reflective surface, and each reflective The reflecting surface of the cavity can reflect part of the light beam emitted by the corresponding light-emitting unit.

綜上所述,本發明的直下式背光裝置相對於現有的直下式背光模組具有更好的出光均勻度,即,本發明的直下式背光裝置能大幅改善現有直下式背光模組所容易存在的明顯的暗區及亮區的問題。In summary, the direct-lit backlight device of the present invention has better light output uniformity compared to the existing direct-lit backlight module, that is, the direct-lit backlight device of the present invention can greatly improve the existing direct-lit backlight module. The obvious dark and bright areas.

為能更進一步瞭解本發明的特徵及技術內容,請參閱以下有關本發明的詳細說明與附圖,但是此等說明與附圖僅用來說明本發明,而非對本發明的保護範圍作任何的限制。In order to further understand the features and technical content of the present invention, please refer to the following detailed descriptions and drawings about the present invention, but these descriptions and drawings are only used to illustrate the present invention, and do not make any claims about the protection scope of the present invention. limit.

於以下說明中,如有指出請參閱特定圖式或是如特定圖式所示,其僅是用以強調於後續說明中,所述及的相關內容大部份出現於該特定圖式中,但不限制該後續說明中僅可參考所述特定圖式。In the following description, if it is pointed out, please refer to a specific drawing or as shown in a specific drawing, it is only used to emphasize that in the subsequent description, most of the related content appears in the specific drawing. However, it is not limited that only the specific drawings can be referred to in this subsequent description.

請一併參閱圖1至圖4,圖1顯示為本發明的直下式背光裝置的側面示意圖,圖2顯示為本發明的直下式背光裝置的單一個反射杯結構、單一個發光單元及局部的反射片體的側面示意圖,圖3顯示為本發明的直下式背光裝置的各個發光單元的光強度與角度分布示意圖,圖4顯示為本發明的直下式背光裝置的單一個發光單元的立體示意圖。Please refer to FIGS. 1 to 4 together. FIG. 1 shows a side view of the direct-lit backlight device of the present invention. A schematic side view of the reflective sheet. FIG. 3 is a schematic diagram showing the light intensity and angle distribution of each light-emitting unit of the direct-lit backlight device of the present invention, and FIG. 4 is a three-dimensional schematic view of a single light-emitting unit of the direct-lit backlight device of the present invention.

如圖1所示,本發明的直下式背光裝置100包含:一光源座1及一反射片體2。光源座1包含:一電路板11、多個反射杯結構12及多個發光單元13。多個反射杯結構12固定設置於電路板11的一側,各個反射杯結構12由遠離電路板11的一側向靠近電路板11的一側內凹形成有一反射腔121。關於反射腔121具體的外型於此不加以限制,其可依據需求變化。As shown in FIG. 1, the direct type backlight device 100 of the present invention includes: a light source base 1 and a reflective sheet 2. The light source base 1 includes: a circuit board 11, a plurality of reflective cup structures 12 and a plurality of light-emitting units 13. A plurality of reflective cup structures 12 are fixedly arranged on one side of the circuit board 11, and each reflective cup structure 12 is recessed to form a reflective cavity 121 from a side away from the circuit board 11 to a side close to the circuit board 11. The specific appearance of the reflective cavity 121 is not limited here, and it can be changed according to requirements.

如圖2所示,其顯示為單一個反射杯結構12的側面示意圖。反射腔121相反於電路板11的一側為一反射面122,反射面122的反射率可以是大於90%。反射杯結構12可以是由高反射率材料所製成,舉例來說可以是使用含有由氧化鈦、氧化鋁、氧化矽等金屬氧化物粒子構成的高反射材料的樹脂製作,但不以此為限;在不同的應用中,反射杯結構12可以是由不摻有高反射材料的樹脂製成,而反射腔121相反於電路板11的一側則設置(例如是以塗佈的方式)具有高反射率的層狀結構,而具有高反射率的層狀結構的一側即可對應形成為前述反射面122。在實際應用中,各個反射腔121的寬度W與高度H比可以是介於2:1至6:1,但不以此為限,反射腔121的尺寸及其外型可以是依據發光單元13的不同而對應改變。As shown in FIG. 2, it is shown as a schematic side view of a single reflector cup structure 12. The side of the reflective cavity 121 opposite to the circuit board 11 is a reflective surface 122, and the reflectivity of the reflective surface 122 may be greater than 90%. The reflective cup structure 12 can be made of a material with high reflectivity. For example, it can be made of a resin containing a highly reflective material composed of metal oxide particles such as titanium oxide, aluminum oxide, and silicon oxide. In different applications, the reflective cup structure 12 can be made of resin that is not doped with highly reflective materials, and the reflective cavity 121 is set on the side opposite to the circuit board 11 (for example, by coating). A layered structure with high reflectivity, and one side of the layered structure with high reflectivity can be correspondingly formed as the aforementioned reflective surface 122. In practical applications, the ratio of the width W to the height H of each reflective cavity 121 can be between 2:1 and 6:1, but not limited to this. The size and appearance of the reflective cavity 121 can be based on the light-emitting unit 13 Correspondingly change according to the difference.

值得一提的是,在實際應用中,在反射腔121的側面示意圖中,各個反射腔121鄰近於電路板11的位置可以是具有一弧狀區段123,藉此,反射腔121將可以更有效地使發光單元13所發出的光束向反射片體2的方向反射。當然,在不同的實施例中,在反射腔121的側面示意圖中,反射腔121也可以是僅包含有直線區段而不包含有任何弧狀區段。It is worth mentioning that in practical applications, in the schematic side view of the reflective cavity 121, each reflective cavity 121 adjacent to the circuit board 11 may have an arc-shaped section 123, whereby the reflective cavity 121 can be more The light beam emitted by the light-emitting unit 13 is effectively reflected in the direction of the reflective sheet 2. Of course, in different embodiments, in the schematic side view of the reflective cavity 121, the reflective cavity 121 may also include only straight sections without any arc-shaped sections.

如圖2所示,各個發光單元13固定設置於電路板11,且各個發光單元13對應位於各個反射腔121中,且各個發光單元13可以是對應位於反射腔121的中心且最低的位置。在實際應用中,反射杯結構12可以是包含有用來容置發光單元13的容槽124,而發光單元13則是對應設置於所述容槽124中。各個發光單元13具有一頂發光面13A及一環發光面13B,頂發光面13A的周緣與環發光面13B相連接,發光單元13由頂發光面13A發出的光束強度低於由環發光面13B發出的光束的強度。As shown in FIG. 2, each light-emitting unit 13 is fixedly disposed on the circuit board 11, and each light-emitting unit 13 is correspondingly located in each reflective cavity 121, and each light-emitting unit 13 may be located at the center and lowest position of the reflective cavity 121 correspondingly. In practical applications, the reflective cup structure 12 may include a recess 124 for accommodating the light-emitting unit 13, and the light-emitting unit 13 is correspondingly disposed in the recess 124. Each light-emitting unit 13 has a top light-emitting surface 13A and a ring light-emitting surface 13B. The periphery of the top light-emitting surface 13A is connected to the ring light-emitting surface 13B. The intensity of the beam.

如圖3所示,其顯示為各個發光單元13的光強度與角度分布示意圖,各個發光單元13於正向0度的光強度可以是低於50%以下,光強度最大值則是落在-55°~-75°及55°~75°之間,而各個發光單元13的光形圖大致呈現為半心形。在實際應用中,各個發光單元13的寬度W可以是介於0.1公釐(mm)至2公釐(mm),各個發光單元13的長度可以是介於0.1公釐(mm)至2公釐(mm),各個發光單元13的高度H可以是介於0.1公釐(mm)至1.7公釐(mm)。As shown in Fig. 3, it shows a schematic diagram of the light intensity and angular distribution of each light-emitting unit 13. The light intensity of each light-emitting unit 13 at 0 degrees in the positive direction can be less than 50%, and the maximum light intensity falls on- Between 55° and -75° and between 55° and 75°, the light pattern of each light-emitting unit 13 is roughly half-heart-shaped. In practical applications, the width W of each light-emitting unit 13 may be between 0.1 millimeters (mm) to 2 millimeters (mm), and the length of each light-emitting unit 13 may be between 0.1 mm (mm) and 2 mm. (mm), the height H of each light-emitting unit 13 may be between 0.1 millimeters (mm) and 1.7 millimeters (mm).

如圖4所示,在具體的實施中,各個發光單元13可以是包含一發光二極體131、一半反射件132及一透光體133。發光二極體131可以是矩形立方體,而發光二極體131具有一頂面1311及四個側面1312,頂面1311為發光二極體131相反於與電路板11相連接的一端面,四個側面1312則與頂面1311的周緣相連接。As shown in FIG. 4, in a specific implementation, each light-emitting unit 13 may include a light-emitting diode 131, a half-reflective member 132 and a light-transmitting body 133. The light emitting diode 131 may be a rectangular cube, and the light emitting diode 131 has a top surface 1311 and four side surfaces 1312. The top surface 1311 is the end surface of the light emitting diode 131 opposite to the one connected to the circuit board 11. The side surface 1312 is connected with the periphery of the top surface 1311.

半反射件132設置於發光二極體131的頂面1311,而通過頂面1311向外射出的部分光束,將被半反射件132反射,另一部分的光束則能通過半反射件132向外射出。在實際應用中,半反射件132可以是以塗佈的方式形成於發光二極體131的頂面1311,而半反射件132例如可以是由半透明狀的材料所製成;舉例來說,半反射件132可以是由厚度薄到可以使發光單元13所發出的光束直接穿過的反射材料所製成。在具體的應用中,半反射件132可以是由具有不同折射率的片體結構堆疊而成,例如是分佈式布拉格反射膜(Distributed Bragg Reflector)。The semi-reflective element 132 is arranged on the top surface 1311 of the light-emitting diode 131, and part of the light beam emitted from the top surface 1311 will be reflected by the semi-reflective element 132, and the other part of the light beam can be emitted outward through the semi-reflective element 132 . In practical applications, the semi-reflective member 132 may be formed on the top surface 1311 of the light-emitting diode 131 in a coating manner, and the semi-reflective member 132 may be made of, for example, a translucent material; for example, The semi-reflective member 132 may be made of a reflective material that is thin enough to allow the light beam emitted by the light-emitting unit 13 to directly pass through. In a specific application, the semi-reflective member 132 may be formed by stacking sheet structures with different refractive indices, for example, a distributed Bragg reflector (Distributed Bragg Reflector).

透光體133包覆半反射件132及發光二極體131設置,透光體133的外型可以是大致呈現為矩形立方體,而透光體133的外圍對應形成有所述頂發光面13A及所述環發光面13B,頂發光面13A與頂面1311彼此相面對地設置,而發光二極體131所發出的光束將通過的透光體133向外射出。所述透光體133用以保護發光二極體131及半反射件132,以避免發光二極體131及半反射件132直接裸露而容易受損。在實際應用中,半反射件132例如可以是包含二氧化矽(SiO2 )、二氧化鈦(TiO2 )等反射粒子。The translucent body 133 is arranged to cover the semi-reflective member 132 and the light emitting diode 131. The shape of the translucent body 133 can be approximately a rectangular cube. The ring light emitting surface 13B, the top light emitting surface 13A and the top surface 1311 are arranged facing each other, and the light beam emitted by the light emitting diode 131 emits the light transmitting body 133 through which it passes. The light-transmitting body 133 is used to protect the light-emitting diode 131 and the semi-reflective element 132 to prevent the light-emitting diode 131 and the semi-reflective element 132 from being directly exposed and easily damaged. In practical applications, the semi-reflective member 132 may include reflective particles such as silicon dioxide (SiO 2 ) and titanium dioxide (TiO 2 ), for example.

在實際應用中,各個發光二極體131可以是依據需求發出不同波長的光束。在發光二極體131是發出波長460奈米至470奈米的藍光光束的實施例中,透光體133內可以是摻有一色轉換材料,色轉換材料例如可以是包含有磷光體、II-VI族半導體奈米晶體或III-V族半導體奈米晶體等材料,而發光二極體131所發出的藍光光束,通過透光體133內的色轉換材料後,將轉換為白光光束向外射出。另外,透光體133中也可以是設置有擴散粒子等,於此不加以限制。In practical applications, each light emitting diode 131 may emit light beams of different wavelengths according to requirements. In the embodiment where the light-emitting diode 131 emits a blue light beam with a wavelength of 460 nm to 470 nm, the light-transmitting body 133 may be doped with a color conversion material, and the color conversion material may include phosphors, II- Materials such as group VI semiconductor nanocrystals or group III-V semiconductor nanocrystals, and the blue light beam emitted by the light-emitting diode 131 passes through the color conversion material in the light-transmitting body 133, and then is converted into a white light beam and emitted outward . In addition, the light-transmitting body 133 may be provided with diffusion particles and the like, which is not limited here.

依上所述,透過上述半反射件132的設置,發光單元13由頂發光面13A向外射出的光束的光通量,將明顯低於發光單元13由環發光面13B向外射出的光束的光通量,從而可提升直下式背光裝置100所發出的光束的均勻度,而避免使用者容易直接觀察到來自於各個發光單元13的頂發光面13A所發出的光束所形成的光點的問題。也就是說,設置有半反射件132的直下式背光裝置100,相較於未設置有半反射件132的直下式背光裝置100,具有更好的出光均勻度,且更不容易被使用者觀察到明顯的光點。As described above, through the arrangement of the semi-reflective member 132, the luminous flux of the light beam emitted from the top light-emitting surface 13A of the light-emitting unit 13 will be significantly lower than the light flux of the light beam emitted by the light-emitting unit 13 from the annular light-emitting surface 13B. Therefore, the uniformity of the light beam emitted by the direct-lit backlight device 100 can be improved, and the problem that the user can easily directly observe the light spots formed by the light beams emitted from the top light-emitting surface 13A of each light-emitting unit 13 can be avoided. In other words, the direct-lit backlight device 100 provided with the semi-reflective member 132 has better light output uniformity than the direct-lit backlight device 100 not provided with the semi-reflective member 132, and is less likely to be observed by the user. To a clear spot of light.

值得一提的是,各個發光單元13的發光二極體131可以是覆晶封裝發光晶片(Flip chip),且各個發光單元13還可以是包含有一轉接板134。轉接板134包含絕緣結構及導電佈線結構,覆晶封裝發光晶片固定於轉接板134,且覆晶封裝發光晶片與導電佈線結構電性連通,而覆晶封裝發光晶片是通過轉接板134,固定於電路板11,且覆晶封裝發光晶片是通過轉接板134與電路板11電性連通,而電路板11是通過轉接板134傳遞電力及控制訊號至覆晶封裝發光晶片。It is worth mentioning that the light-emitting diode 131 of each light-emitting unit 13 may be a flip chip, and each light-emitting unit 13 may also include an adapter board 134. The transfer board 134 includes an insulating structure and a conductive wiring structure. The flip-chip packaged light-emitting chip is fixed to the transfer board 134, and the flip-chip packaged light-emitting chip is electrically connected with the conductive wiring structure, and the flip-chip packaged light-emitting chip passes through the transfer board 134 , Fixed to the circuit board 11, and the flip-chip packaged light-emitting chip is electrically connected to the circuit board 11 through the adapter board 134, and the circuit board 11 transmits power and control signals to the flip-chip packaged light-emitting chip through the adapter board 134.

透過上述轉接板134的設置,將可大幅降低覆晶封裝發光晶片在安裝於電路板11的過程中發生剝離(Peeling)的問題;更具體來說,在現有技術中,是直接將覆晶發光晶片固定於電路板11上,此種固定方式,在固定的過程中,覆晶發光晶片的電極結構,將容易直接受熱而膨脹,進而導致電極結構發生剝離(Peeling)的問題。相對地,若是使覆晶封裝發光晶片透過轉接板134固定於電路板11上,則在將發光單元13固定於電路板11的過程中,相關的熱能將不易直接傳遞至覆晶封裝發光晶片,而大部份的熱能會先被轉接板134吸收,藉此,覆晶封裝發光晶片將不容易發生上述剝離(Peeling)問題。Through the arrangement of the above-mentioned transfer board 134, the problem of peeling (peeling) of the flip-chip packaged light-emitting chip during the process of mounting on the circuit board 11 can be greatly reduced; more specifically, in the prior art, the flip chip is directly The light-emitting chip is fixed on the circuit board 11. In this fixing method, the electrode structure of the flip-chip light-emitting chip will easily be directly heated and expand during the fixing process, which will cause the problem of peeling of the electrode structure. In contrast, if the flip-chip packaged light-emitting chip is fixed on the circuit board 11 through the adapter board 134, the related heat energy will not be directly transferred to the flip-chip packaged light-emitting chip during the process of fixing the light-emitting unit 13 to the circuit board 11 , And most of the heat energy will be absorbed by the transfer board 134 first, so that the flip-chip packaged light-emitting chip will not be prone to the peeling problem mentioned above.

請一併參閱圖1、圖2、圖5及圖6,圖5顯示為本發明的直下式背光裝置的反射片體的內側面的正視圖,圖6顯示本發明的直下式背光裝置的反射片體的單一個反射區域的正視圖。反射片體2設置於光源座1的上方。反射片體2包含:一基材21及多組光學結構22。基材21彼此相反的兩個寬側面分別定義為一內側面211及一外側面212。Please refer to Figure 1, Figure 2, Figure 5 and Figure 6. Figure 5 shows a front view of the inner side of the reflective sheet body of the direct type backlight device of the present invention, and Figure 6 shows the reflection of the direct type backlight device of the present invention A front view of a single reflective area of the sheet. The reflective sheet body 2 is arranged above the light source base 1. The reflective sheet 2 includes: a substrate 21 and multiple sets of optical structures 22. The two opposite wide sides of the substrate 21 are defined as an inner side 211 and an outer side 212 respectively.

基材21於內側面211定義有多個反射區域21A。當反射片體2固定設置於光源座1的上方時,基材21的內側面211是面對光源座1,且各個反射區域21A是對應位於各個反射杯結構12的正上方,且各個反射區域21A的中心C對應位於發光單元13的頂發光面13A的中心的上方,更具體來說,各個反射區域21A的中心C與發光單元13的頂發光面13A的中心是位於同一軸線上。The base material 21 defines a plurality of reflection areas 21A on the inner surface 211. When the reflective sheet 2 is fixedly arranged above the light source base 1, the inner side surface 211 of the substrate 21 faces the light source base 1, and each reflective area 21A is correspondingly located directly above each reflective cup structure 12, and each reflective area The center C of 21A is correspondingly located above the center of the top light emitting surface 13A of the light emitting unit 13. More specifically, the center C of each reflective area 21A and the center of the top light emitting surface 13A of the light emitting unit 13 are located on the same axis.

在實際應用中,各個反射區域21A是對應落在各個反射杯結構12向反射片體2的方向的正投影的正投影區域內,或者,反射區域21A可以是等於各個反射杯結構12向反射片體2的方向的正投影的正投影區域;各個反射區域21A的中心C是落在各個發光單元13向反射片體2的方向的正投影的正投影區域內。In practical applications, each reflective area 21A corresponds to the orthographic projection area of the orthographic projection of each reflective cup structure 12 to the reflective sheet body 2, or the reflective area 21A may be equal to the reflective cup structure 12 to the reflective sheet. The orthographic projection area of the orthographic projection in the direction of the body 2; the center C of each reflective area 21A falls within the orthographic projection area of the orthographic projection of each light-emitting unit 13 in the direction of the reflective sheet 2.

多組光學結構22形成於基材21的內側面211,各組光學結構22對應位於各個反射區域21A內,且各組光學結構22包含多個反射凸點221。於各個反射區域21A內的多個反射凸點221的分布方式是,多個反射凸點221越鄰近於反射區域21A的中心C越密集地排列,多個反射凸點221越遠離反射區域21A的中心C則越分散地設置。各個所述反射凸點221能反射發光單元13所發出的光束,而被反射凸點221反射的至少一部分的光束,將回到所述反射腔121中,並通過反射腔121的反射後,再次向所述反射片體2的方向射出。Multiple groups of optical structures 22 are formed on the inner side surface 211 of the substrate 21, and each group of optical structures 22 is correspondingly located in each reflection area 21A, and each group of optical structures 22 includes a plurality of reflective convex points 221. The multiple reflective bumps 221 in each reflective area 21A are distributed in such a manner that the closer the multiple reflective bumps 221 are to the center C of the reflective area 21A, the more densely they are arranged, and the farther away the multiple reflective bumps 221 are from the reflective area 21A. The center C is arranged more dispersedly. Each of the reflective bumps 221 can reflect the light beam emitted by the light-emitting unit 13, and at least a part of the light beam reflected by the reflective bumps 221 will return to the reflective cavity 121 and be reflected by the reflective cavity 121 again. It is emitted in the direction of the reflective sheet body 2.

在具體的實施中,各個反射凸點221例如可以是通過油墨印刷、塑膠成型技術(射出成型、熱壓成型)等方式形成於基材21,各個反射凸點221可以是包含有氧化鈦粒子、氧化鋁粒子、氧化矽粒子等高反射率的粒子的樹脂。各個反射凸點221的外徑OD(如圖6所示)可以介於30微米(um)至500微米(um),較佳地,各個反射凸點221的外徑OD可以是介於30微米(um)至100微米(um)。各個反射凸點221的高度H(如圖2所示)可以是介於1微米(um)至10微米(um)。In a specific implementation, each reflective bump 221 may be formed on the substrate 21 by means of ink printing, plastic molding technology (injection molding, hot press molding), etc., and each reflective bump 221 may contain titanium oxide particles, A resin with high reflectivity particles such as alumina particles and silica particles. The outer diameter OD of each reflective bump 221 (as shown in FIG. 6) may be between 30 microns (um) and 500 microns (um), preferably, the outer diameter OD of each reflective bump 221 may be between 30 microns (um) to 100 microns (um). The height H of each reflective bump 221 (as shown in FIG. 2) may be between 1 micrometer (um) and 10 micrometers (um).

在實際應用中,基材21的厚度是介於0.3公釐(mm)至2公釐(mm)。發光單元13所發出的光束,能由基材21未設置有反射凸點221的內側面211,穿過所述基材21,而由所述外側面212向外射出。基材21具體的材料及其包含的結構於此不加以限制,舉例來說,基材21可以是類似於擴散板(Diffuser)的結構,或者,基材21可以是由透明高分子材料製成,或者,基材21也可以是多層膜材料,於此不加以限制。In practical applications, the thickness of the substrate 21 is between 0.3 millimeters (mm) and 2 millimeters (mm). The light beam emitted by the light-emitting unit 13 can pass through the substrate 21 from the inner side surface 211 of the substrate 21 without the reflective bumps 221, and then be emitted from the outer side surface 212. The specific material and structure of the substrate 21 are not limited here. For example, the substrate 21 may have a structure similar to a diffuser, or the substrate 21 may be made of a transparent polymer material. Alternatively, the substrate 21 may also be a multilayer film material, which is not limited here.

依上所述,透過於光源座1的上方設置反射片體2,且使反射片體2面對光源座1的寬側面設置有多組光學結構22的設計,以及使各組光學結構22所包含的多個反射凸點221,在靠近反射區域21A的中心C的位置密集地排列,而在遠離反射區域21A的中心C的位置鬆散地排列的設計,將可以使發光單元13由頂發光面13A所發出的大部分光束將被反射凸點221反射至反射腔121,發光單元13由環發光面13B所發出的大部分光束則是能通過基材21由外側面212向外射出,而發光單元13由環發光面13B所發出的少部分光束則是被反射凸點221反射至反射腔121。如此,將可大幅提升光源座1所發出的光束,通過反射片體2射出的出光均勻度。As described above, the reflective sheet 2 is provided above the light source base 1, and the wide side of the reflective sheet 2 facing the light source base 1 is provided with multiple sets of optical structures 22, and each set of optical structures 22 is set The included multiple reflective bumps 221 are densely arranged at a position close to the center C of the reflective area 21A, and loosely arranged at a position away from the center C of the reflective area 21A, which will enable the light-emitting unit 13 to be from the top light-emitting surface. Most of the light beams emitted by 13A will be reflected by the reflective bumps 221 to the reflecting cavity 121, and most of the light beams emitted by the light-emitting unit 13 from the annular light-emitting surface 13B can be emitted from the outer surface 212 through the substrate 21 to emit light. A small part of the light beam emitted by the unit 13 from the annular light-emitting surface 13B is reflected by the reflective bumps 221 to the reflective cavity 121. In this way, the uniformity of the light emitted by the light source holder 1 through the reflective sheet 2 can be greatly improved.

如圖7所示,其顯示為單一個發光單元13所發出的光束的發光角度、單一個發光單元13所發出的光束通過反射片體2的穿透率及單一個發光單元13所發出的光束被反射片體2反射的反射率的關係示意圖。如圖所示,透過上述多組光學結構22及其包含的多個反射凸點221於反射區域21A中的分布設計,反射片體2對於發光單元13的正向光的反射率較高、穿透率較低,而對發光單元13的大角度光束的反射率較低、穿透率較高。As shown in FIG. 7, it shows the light-emitting angle of the light beam emitted by a single light-emitting unit 13, the transmittance of the light beam emitted by a single light-emitting unit 13 through the reflector body 2, and the light beam emitted by a single light-emitting unit 13 A schematic diagram of the relationship between the reflectivity reflected by the reflective sheet 2. As shown in the figure, through the above-mentioned multiple sets of optical structures 22 and the multiple reflective bumps 221 included in the distribution design in the reflective area 21A, the reflective sheet 2 has a high reflectivity for the forward light of the light-emitting unit 13 and penetrates The transmittance is low, and the reflectance of the large-angle beam of the light-emitting unit 13 is low, and the transmittance is high.

請復參圖6,在實際應用中,各個反射區域21A還可以區隔有一中心區域A1、一第一外圍區域A2及一第二外圍區域A3,中心區域A1內包含反射區域21A的中心C,第一外圍區域A2環繞中心區域A1,第二外圍區域A3環繞第一外圍區域A2,中心區域A1落在相對應的發光單元13向反射片體2的方向的正投影的正投影區域內。其中,第一外圍區域A2的外緣至中心區域A1的中心C的直線距離L2,為中心區域A1的中心C到中心區域A1的外緣的直線距離L1的2倍;第二外圍區域A3的外緣至中心區域A1的中心C的直線距離L3,為中心區域A1的中心C到中心區域A1的外緣的直線距離L1的3倍。也就是說,若中心區域A1的中心C至第二外圍區域A3的外緣的直線距離定義為R,則第一外圍區域A2的外緣與中心區域A1的中心C的直線距離為2/3R,而中心區域A1的中心C至中心區域A1的外緣的直線距離則為1/3R。Please refer to FIG. 6 again. In practical applications, each reflective area 21A can also be separated by a central area A1, a first peripheral area A2, and a second peripheral area A3. The central area A1 includes the center C of the reflective area 21A. The first peripheral area A2 surrounds the central area A1, the second peripheral area A3 surrounds the first peripheral area A2, and the central area A1 falls in the orthographic projection area of the corresponding light emitting unit 13 in the direction of the reflective sheet 2. Among them, the linear distance L2 from the outer edge of the first peripheral area A2 to the center C of the central area A1 is twice the linear distance L1 from the center C of the central area A1 to the outer edge of the central area A1; The linear distance L3 from the outer edge to the center C of the central area A1 is three times the linear distance L1 from the center C of the central area A1 to the outer edge of the central area A1. In other words, if the linear distance from the center C of the central area A1 to the outer edge of the second peripheral area A3 is defined as R, the linear distance between the outer edge of the first peripheral area A2 and the center C of the central area A1 is 2/3R , And the linear distance from the center C of the central area A1 to the outer edge of the central area A1 is 1/3R.

各組光學結構22於中心區域A1內的多個反射凸點221所佔面積的總和佔中心區域A1的面積的60%~90%;各組光學結構22於反射區域21A的第一外圍區域A2內的多個反射凸點221所佔面積的總和,佔第一外圍區域A2的面積的30%~60%;各組光學結構22於反射區域21A的第二外圍區域A3內的多個反射凸點221所佔面積的總和佔第二外圍區域A3的面積的5%~30%。透過上述設計,將可進一步提升光源座1所發出的光束通過反射片體2向外射出的均勻度。The total area occupied by the plurality of reflective bumps 221 of each group of optical structures 22 in the central area A1 accounts for 60% to 90% of the area of the central area A1; each group of optical structures 22 is located in the first peripheral area A2 of the reflective area 21A The sum of the area occupied by the plurality of reflective bumps 221 in the first peripheral area A2 accounts for 30% to 60%; the plurality of reflective bumps in the second peripheral area A3 of each group of optical structures 22 in the reflective area 21A The total area occupied by the point 221 accounts for 5%-30% of the area of the second peripheral area A3. Through the above design, the uniformity of the light beam emitted by the light source holder 1 out of the reflective sheet 2 can be further improved.

另外,於各個中心區域A1內的多個反射凸點221的分布方式,可以是多個反射凸點221越鄰近於中心區域A1的中心C越密集地排列,多個反射凸點221越遠離中心區域A1的中心C則越分散地設置;於各個第一外圍區域A2內的多個反射凸點221的分布方式,可以是多個反射凸點221越鄰近於中心區域A1越密集地排列,多個反射凸點221越遠離中心區域A1則越分散地設置;於各個第二外圍區域A3內的多個反射凸點221的分布方式,可以是多個反射凸點221越鄰近於第一外圍區域A2越密集地排列,多個反射凸點221越遠離第一外圍區域A2則越分散地設置。也就是說,在單一個反射區域21A中的多個反射凸點221,越靠近中心區域A1的中心C是越密集地排列,而越遠離中心區域A1的中心C則是越疏鬆地排列。如此,還可以再進一步提升光源座1所發出的光束通過反射片體2向外射出的均勻度。In addition, the distribution of the multiple reflective bumps 221 in each central area A1 may be such that the closer the multiple reflective bumps 221 are to the center C of the central area A1, the denser the multiple reflective bumps 221 are, and the farther away the multiple reflective bumps 221 are from the center. The center C of the area A1 is more dispersedly arranged; the distribution of the multiple reflective bumps 221 in each first peripheral area A2 may be that the closer the multiple reflective bumps 221 are to the central area A1, the more densely they are arranged. The more the reflective bumps 221 are away from the central area A1, the more scattered they are; the distribution of the multiple reflective bumps 221 in each second peripheral area A3 may be that the multiple reflective bumps 221 are closer to the first peripheral area The more densely A2 is arranged, the farther away the plurality of reflective bumps 221 are from the first peripheral area A2, the more scattered they are. That is to say, the multiple reflective bumps 221 in a single reflective area 21A are arranged densely as they are closer to the center C of the central area A1, and arranged loosely as they are farther away from the center C of the central area A1. In this way, the uniformity of the light beam emitted from the light source base 1 through the reflective sheet 2 can be further improved.

如圖6所示,單一個反射區域21A內的多個反射凸點221可以是具有相同的外徑OD,但越靠近反射區域21A的中心C的多個反射凸點221彼此間的間距D越小,而越遠離反射區域21A的中心C的多個反射凸點221彼此間的間距D越大。As shown in FIG. 6, the multiple reflective bumps 221 in a single reflective area 21A may have the same outer diameter OD, but the closer to the center C of the reflective area 21A, the greater the distance D between the multiple reflective bumps 221. The distance D between the reflective bumps 221 that are farther from the center C of the reflective area 21A is larger.

請參閱圖8,其顯示為本發明的直下式背光裝置的第二實施例的單一個反射區域內的多個反射凸點的示意圖。如圖所示,本實施例與前述實施例最大不同之處在於:單一個反射區域21A內的多個反射凸點221彼此間的間距D可以彼此相同,但每一個反射凸點221的外徑OD不相同,而越遠離反射區域21A的中心C的反射凸點221的外徑越小,越靠近反射區域21A的中心C的反射凸點221的外徑越大。Please refer to FIG. 8, which shows a schematic diagram of a plurality of reflective bumps in a single reflective area of the second embodiment of the direct-lit backlight device of the present invention. As shown in the figure, the biggest difference between this embodiment and the previous embodiment is that the spacing D between the multiple reflective bumps 221 in a single reflective area 21A can be the same as each other, but the outer diameter of each reflective bump 221 The OD is not the same, and the outer diameter of the reflective bump 221 that is farther from the center C of the reflective region 21A is smaller, and the outer diameter of the reflective bump 221 is larger the closer to the center C of the reflective region 21A.

請一併參閱圖9及圖10,圖9顯示為本發明的直下式背光裝置的第三實施例的反射片體的側面的局部放大示意圖,圖10為本發明的直下式背光裝置的第三實施例的反射片體所包含的微結構的示意圖。如圖所示,本實施例與前述實施例最大不同之處在於,反射片體2還可以包含多個微結構23。多個微結構23形成於基材21的外側面212,通過基材21而向遠離光源座1的方向射出的部分光束將被微結構23反射,而射向光源座1的方向。如圖10所示,在實際應用中,各個微結構23可以是包含兩個正三稜錐體,而各個正三稜錐體的一底面是對應位於外側面212。在不同的實施例中,各個微結構23也可以是包含至少一個正四稜錐體,且正四稜錐體的底面位於外側面212。透過上述微結構23的設計,可以再進一步提升光源座1所發出的光束通過反射片體2向外射出的均勻度。Please refer to FIGS. 9 and 10 together. FIG. 9 shows a partial enlarged schematic view of the side surface of the reflective sheet body of the third embodiment of the direct type backlight device of the present invention, and FIG. 10 is the third embodiment of the direct type backlight device of the present invention. A schematic diagram of the microstructure included in the reflective sheet body of the embodiment. As shown in the figure, the biggest difference between this embodiment and the previous embodiment is that the reflective sheet body 2 may further include a plurality of microstructures 23. A plurality of microstructures 23 are formed on the outer side surface 212 of the substrate 21, and part of the light beam emitted in a direction away from the light source base 1 through the substrate 21 will be reflected by the microstructures 23 and directed toward the light source base 1. As shown in FIG. 10, in practical applications, each microstructure 23 may include two regular triangular pyramids, and a bottom surface of each regular triangular pyramid is located on the outer side surface 212 correspondingly. In different embodiments, each microstructure 23 may also include at least one regular quadrangular pyramid, and the bottom surface of the regular quadrangular pyramid is located on the outer side surface 212. Through the design of the above-mentioned microstructure 23, the uniformity of the light beam emitted from the light source base 1 through the reflective sheet 2 can be further improved.

請參閱圖11,其顯示為本發明的直下式背光裝置的第三實施例的側面示意圖。本實施例與前述實施例最大不同之處在於:直下式背光裝置100還可以包含一擴散膜(Diffuser Film)3、一稜鏡片(Prism Sheet)4及一反射式增亮膜(Dual Brightness Enhancement Film)5。擴散膜3設置於反射片體2相反於光源座1的一側,稜鏡片4設置於擴散膜3相反於反射片體2的一側,反射式增亮膜5設置於稜鏡片4相反於擴散膜3的一側,亦即,擴散膜3位於稜鏡片4與反射片體2之間,稜鏡片4位於反射式增亮膜5與擴散膜3之間。關於擴散膜3、稜鏡片4及反射式增亮膜5的數量可以是依據需求變化,不以單一片為限。Please refer to FIG. 11, which shows a schematic side view of the third embodiment of the direct type backlight device of the present invention. The biggest difference between this embodiment and the previous embodiments is that the direct type backlight device 100 may also include a diffuser film (Diffuser Film) 3, a Prism Sheet 4, and a dual Brightness Enhancement Film (Dual Brightness Enhancement Film). )5. The diffuser film 3 is arranged on the side of the reflective sheet 2 opposite to the light source base 1, the diffusive film 4 is arranged on the side of the diffuser 3 opposite to the reflective sheet 2, and the reflective brightness enhancement film 5 is arranged on the diffusive sheet 4 opposite to the diffuser One side of the film 3, that is, the diffuser film 3 is located between the reflective sheet 4 and the reflective sheet body 2, and the reflective sheet 4 is located between the reflective brightness enhancement film 5 and the diffuser film 3. Regarding the number of diffusion film 3, 稜鏡 film 4, and reflective brightness enhancement film 5, the number can be changed according to requirements, and is not limited to a single film.

在具體實施中,所述擴散膜3內可以是具有擴散粒子,而使光束能於其內進行特定方向的折射、反射,而使通過的光束,能更均勻地向外射出。所述稜鏡片4可以是包含有多個微結構(圖未示),而多個微結構可以用來改變光束的路徑,據以使通過的光束,能集中於預定的可視角範圍中。反射式增亮膜5可以是包含有多層不同折射率的光學薄膜,而進入反射式增亮膜5的光束將於多層光學薄膜之間反射、折射,透過反射式增亮膜5的設置將可提升直下式背光裝置100的正面亮度及大視角方向的亮度。特別說明的是,本實施例的反射片體2相反於面對光源座1的一側,也可以是形成有前述實施例所舉的多個微結構23(如圖10所示)。In a specific implementation, the diffusion film 3 may contain diffusion particles, so that the light beam can be refracted and reflected in a specific direction, so that the passing light beam can be emitted out more uniformly. The sheet 4 may include a plurality of microstructures (not shown), and the plurality of microstructures may be used to change the path of the light beam, so that the passing light beam can be concentrated in a predetermined viewing angle range. The reflective brightness enhancement film 5 can be an optical film containing multiple layers of different refractive indexes, and the light beam entering the reflective brightness enhancement film 5 will be reflected and refracted between the multiple optical films, and the setting of the reflective brightness enhancement film 5 will be able to The front brightness of the direct-lit backlight device 100 and the brightness in the direction of a large viewing angle are improved. In particular, the reflective sheet body 2 of this embodiment is opposite to the side facing the light source base 1, and may also be formed with a plurality of microstructures 23 (as shown in FIG. 10) as mentioned in the previous embodiment.

依上所述,本實施例的直下式背光裝置100透過擴散膜3、稜鏡片4及反射式增亮膜5的設置,將可更進一步提升直下式背光裝置100整體的出光均勻度及其出光亮度。As described above, the direct-lit backlight device 100 of this embodiment can further improve the overall light output uniformity of the direct-lit backlight device 100 and its light output through the arrangement of the diffuser film 3, the diffusor sheet 4, and the reflective brightness enhancement film 5. brightness.

請參閱圖12,其顯示為本發明的直下式背光裝置100的發光單元13的第五實施例的示意圖。如圖所示,本實施例的發光單元13包含:一發光二極體131、一半反射件132、一透光體133及一轉接板134。發光二極體131固定設置於轉接板134,透光體133包覆發光二極體131,半反射件132則是設置於透光體133的頂面1331。關於發光二極體131、半反射件132、透光體133及轉接板134的詳細說明,請參閱前述實施例,於此不再贅述。簡單來說,本實施例與前述實施例(圖4)最大差異在於:半反射件132的設置位置不同,亦即,本發明的直下式背光裝置100的發光單元13,在具有半反射件132的實施例中,半反射件132的設置位置可以是依據需求變化,舉例來說,半反射件132可以是設置於發光二極體131的頂面1311(如圖4所示),或者,半反射件132也可以是設置於透光體133的頂面1331。Please refer to FIG. 12, which shows a schematic diagram of a fifth embodiment of the light emitting unit 13 of the direct type backlight device 100 of the present invention. As shown in the figure, the light-emitting unit 13 of this embodiment includes: a light-emitting diode 131, a half-reflective member 132, a light-transmitting body 133, and an adapter plate 134. The light-emitting diode 131 is fixedly disposed on the adapter board 134, the light-transmitting body 133 covers the light-emitting diode 131, and the semi-reflective member 132 is disposed on the top surface 1331 of the light-transmitting body 133. For the detailed description of the light-emitting diode 131, the semi-reflective element 132, the light-transmitting body 133, and the adapter plate 134, please refer to the foregoing embodiment, and will not be repeated here. To put it simply, the biggest difference between this embodiment and the previous embodiment (FIG. 4) is that the position of the semi-reflective member 132 is different. In the embodiment, the arrangement position of the semi-reflective element 132 can be changed according to requirements. For example, the semi-reflective element 132 can be arranged on the top surface 1311 of the light-emitting diode 131 (as shown in FIG. 4), or the semi-reflective element 132 The reflector 132 may also be disposed on the top surface 1331 of the light-transmitting body 133.

與前述實施例的說明相同,在實際應用中,本實施例所舉的發光單元13,在發光二極體131是發出藍光的情況中,透光體133則可以對應摻有色轉換材料,而發光二極體131所發出的藍光通過透光體133後,將會轉換為白光。Similar to the description of the foregoing embodiment, in practical applications, the light-emitting unit 13 mentioned in this embodiment, in the case that the light-emitting diode 131 emits blue light, the light-transmitting body 133 can correspondingly be doped with a color conversion material to emit light. The blue light emitted by the diode 131 will be converted into white light after passing through the transparent body 133.

以上所述僅為本發明的較佳可行實施例,非因此侷限本發明的專利範圍,故舉凡運用本發明說明書及圖式內容所做的等效技術變化,均包含於本發明的保護範圍內。The above descriptions are only the preferred and feasible embodiments of the present invention, which do not limit the scope of the present invention. Therefore, all equivalent technical changes made by using the description and drawings of the present invention are included in the protection scope of the present invention. .

100:直下式背光裝置 1:光源座 11:電路板 12:反射杯結構 121:反射腔 122:反射面 123:弧狀區段 124:容槽 13:發光單元 13A:頂發光面 13B:環發光面 131:發光二極體 1311:頂面 1312:側面 132:半反射件 133:透光體 1331:頂面 134:轉接板 2:反射片體 21:基材 211:內側面 212:外側面 21A:反射區域 22:光學結構 221:反射凸點 23:微結構 3:擴散膜 4:稜鏡片 5:反射式增亮膜 A1:中心區域 A2:第一外圍區域 A3:第二外圍區域 C:中心 D:間距 OD:外徑 H:高度 W:寬度 L1:距離 L2:距離 L3:距離100: Direct backlight device 1: Light source base 11: circuit board 12: reflector cup structure 121: reflective cavity 122: reflective surface 123: arc section 124: Conveyor 13: Light-emitting unit 13A: Top emitting surface 13B: Ring light-emitting surface 131: LED 1311: top surface 1312: side 132: Semi-reflective parts 133: Translucent body 1331: top surface 134: adapter board 2: reflector body 21: Substrate 211: Inside 212: Outer side 21A: reflective area 22: Optical structure 221: reflective bump 23: Microstructure 3: Diffusion film 4: 稜鏡片 5: Reflective brightness enhancement film A1: Central area A2: The first peripheral area A3: The second peripheral area C: Center D: spacing OD: outer diameter H: height W: width L1: distance L2: distance L3: distance

圖1顯示為本發明的直下式背光裝置的第一實施例的側面示意圖。FIG. 1 shows a schematic side view of the first embodiment of the direct type backlight device of the present invention.

圖2顯示為本發明的直下式背光裝置的第一實施例的單一個反射杯結構、單一個發光單元及局部的反射片體的側面示意圖。2 shows a schematic side view of a single reflective cup structure, a single light-emitting unit, and a partial reflective sheet body of the first embodiment of the direct-lit backlight device of the present invention.

圖3顯示為本發明的直下式背光裝置的第一實施例的各個發光單元的光強度與角度分布示意圖。FIG. 3 is a schematic diagram showing the light intensity and angle distribution of each light-emitting unit of the first embodiment of the direct type backlight device of the present invention.

圖4顯示為本發明的直下式背光裝置的第一實施例的單一個發光單元的立體示意圖。4 is a perspective view of a single light emitting unit of the first embodiment of the direct type backlight device of the present invention.

圖5顯示為本發明的直下式背光裝置的第一實施例的反射片體的內側面的正視圖。FIG. 5 is a front view of the inner side of the reflective sheet body of the first embodiment of the direct type backlight device of the present invention.

圖6顯示本發明的直下式背光裝置的第一實施例的反射片體的單一個反射區域的正視圖。Fig. 6 shows a front view of a single reflective area of the reflective sheet body of the first embodiment of the direct-lit backlight device of the present invention.

圖7顯示為本發明的直下式背光裝置的第一實施例的單一個發光單元所發出的光束的發光角度、單一個發光單元所發出的光束通過反射片體的穿透率及單一個發光單元所發出的光束被反射片體反射的反射率的關係示意圖。FIG. 7 shows the light-emitting angle of the light beam emitted by a single light-emitting unit, the transmittance of the light beam emitted by a single light-emitting unit through the reflective sheet, and the single light-emitting unit of the first embodiment of the direct-lit backlight device of the present invention A schematic diagram of the relationship between the reflectivity of the emitted light beam reflected by the reflective sheet body.

圖8顯示為本發明的直下式背光裝置的第二實施例的單一個反射區域內的多個反射凸點的示意圖。FIG. 8 is a schematic diagram of a plurality of reflective bumps in a single reflective area of the second embodiment of the direct type backlight device of the present invention.

圖9顯示為本發明的直下式背光裝置的第三實施例的反射片體的側面的局部放大示意圖。FIG. 9 is a partial enlarged schematic diagram of the side surface of the reflective sheet body of the third embodiment of the direct type backlight device of the present invention.

圖10為本發明的直下式背光裝置的第三實施例的反射片體所包含的微結構的示意圖。10 is a schematic diagram of the microstructure included in the reflective sheet body of the third embodiment of the direct type backlight device of the present invention.

圖11顯示為本發明的直下式背光裝置的第四實施例的側面示意圖。FIG. 11 is a schematic side view of the fourth embodiment of the direct type backlight device of the present invention.

圖12顯示為本發明的直下式背光裝置的第五實施例的單一個發光單元的立體示意圖。FIG. 12 is a three-dimensional schematic diagram of a single light-emitting unit of the fifth embodiment of the direct type backlight device of the present invention.

1:光源座1: Light source base

11:電路板11: circuit board

12:反射杯結構12: reflector cup structure

121:反射腔121: reflective cavity

122:反射面122: reflective surface

123:弧狀區段123: arc section

124:容槽124: Conveyor

13:發光單元13: Light-emitting unit

13A:頂發光面13A: Top emitting surface

13B:環發光面13B: Ring light-emitting surface

131:發光二極體131: LED

132:半反射件132: Semi-reflective parts

133:透光體133: Translucent body

2:反射片體2: reflector body

21:基材21: Substrate

211:內側面211: Inside

212:外側面212: Outer side

22:光學結構22: Optical structure

221:反射凸點221: reflective bump

A1:中心區域A1: Central area

A2:第一外圍區域A2: The first peripheral area

A3:第二外圍區域A3: The second peripheral area

Claims (10)

一種直下式背光裝置,其包含: 一光源座,其包含: 一電路板; 多個反射杯結構,其固定設置於所述電路板的一側,各個所述反射杯結構由遠離所述電路板的一側向靠近所述電路板的一側內凹形成有一反射腔; 多個發光單元,各個所述發光單元固定設置於所述電路板,且多個所述發光單元對應位於多個所述反射腔中,各個所述發光單元具有一頂發光面及一環發光面,所述頂發光面的周緣與所述環發光面相連接,所述發光單元由所述頂發光面發出的光束強度低於由所述環發光面發出的光束的強度;以及 一反射片體,其定義有多個反射區域,所述反射片體設置於所述光源座的上方,且各個所述反射區域對應位於各個所述反射杯結構的正上方,且各個所述反射區域的中心對應位於所述發光單元的中心的上方,所述反射片體包含: 一基材; 多組光學結構,其形成於所述基材的一寬側面,各組所述光學結構對應位於各個所述反射區域內,且各組所述光學結構包含多個反射凸點,各個所述反射凸點能反射所述光源座所發出的光束;於各個所述反射區域內的多個所述反射凸點,越鄰近於所述反射區域的中心越密集地排列,越遠離所述反射區域的中心則越分散地設置; 其中,形成各個所述反射腔的側壁為一反射面,各個所述反射腔的所述反射面,能反射相對應的所述發光單元所發出的部份光束。A direct type backlight device, which comprises: A light source base, which contains: A circuit board; A plurality of reflective cup structures, which are fixedly arranged on one side of the circuit board, and each of the reflective cup structures is recessed to form a reflective cavity from a side away from the circuit board to a side close to the circuit board; A plurality of light-emitting units, each of the light-emitting units is fixedly arranged on the circuit board, and the multiple of the light-emitting units are correspondingly located in a plurality of the reflective cavities, each of the light-emitting units has a top light-emitting surface and a ring light-emitting surface, The periphery of the top light emitting surface is connected to the ring light emitting surface, and the intensity of the light beam emitted by the top light emitting surface of the light emitting unit is lower than the intensity of the light beam emitted by the ring light emitting surface; and A reflective sheet body, which defines a plurality of reflective areas, the reflective sheet body is arranged above the light source seat, and each of the reflective areas is correspondingly located directly above each of the reflective cup structures, and each of the reflective The center of the area is correspondingly located above the center of the light-emitting unit, and the reflective sheet body includes: A substrate; A plurality of groups of optical structures are formed on a wide side of the substrate, and each group of the optical structures is correspondingly located in each of the reflection areas, and each group of the optical structures includes a plurality of reflective convex points, and each of the reflection The bumps can reflect the light beam emitted by the light source holder; the multiple reflective bumps in each of the reflective areas are densely arranged as they are closer to the center of the reflective area, and farther away from the reflective area. The center is more scattered; Wherein, the side wall forming each of the reflective cavities is a reflective surface, and the reflective surface of each of the reflective cavities can reflect a part of the light beam emitted by the corresponding light-emitting unit. 如請求項1所述的直下式背光裝置,其中,各個所述反射區域落在相對應的所述反射杯結構向所述反射片體的方向的正投影的正投影區域內,各個所述反射區域區隔有一中心區域、一第一外圍區域及一第二外圍區域,所述中心區域位於所述反射區域的中心,所述第一外圍區域環繞所述中心區域,所述第二外圍區域環繞所述第一外圍區域,所述中心區域落在相對應的所述發光單元向所述反射片體的方向的正投影的正投影區域內;其中,於各個所述中心區域內的多個所述反射凸點所佔面積的總和佔所述中心區域的面積的60%~90%;其中,各組所述光學結構於所述反射區域的所述第一外圍區域內的多個所述反射凸點所佔面積的總和,佔所述第一外圍區域的面積的30%~60%;其中,各組所述光學結構於所述反射區域的所述第二外圍區域內的多個所述反射凸點所佔面積的總和佔所述第二外圍區域的面積的5%~30%。The direct type backlight device according to claim 1, wherein each of the reflective areas falls within an orthographic projection area of the corresponding orthographic projection of the reflective cup structure toward the reflective sheet body, and each of the reflective regions The area is divided by a central area, a first peripheral area, and a second peripheral area, the central area is located in the center of the reflective area, the first peripheral area surrounds the central area, and the second peripheral area surrounds In the first peripheral area, the central area falls within the orthographic projection area of the corresponding orthographic projection of the light-emitting unit in the direction of the reflective sheet; The total area occupied by the reflective bumps occupies 60% to 90% of the area of the central region; wherein, each group of the optical structure is in the first peripheral region of the reflective region. The sum of the area occupied by the bumps occupies 30%-60% of the area of the first peripheral area; wherein, each group of the optical structure is in the second peripheral area of the reflective area. The total area occupied by the reflective bumps accounts for 5%-30% of the area of the second peripheral region. 如請求項2所述的直下式背光裝置,其中,於各個所述中心區域內的多個所述反射凸點,越鄰近於所述反射區域的中心越密集地排列,越遠離所述反射區域的中心則越分散地設置;於各個所述第一外圍區域內的多個所述反射凸點,越鄰近於所述中心區域越密集地排列,越遠離所述中心區域則越分散地設置;於各個所述第二外圍區域內的多個所述反射凸點,越鄰近於所述第一外圍區域越密集地排列,越遠離所述第一外圍區域則越分散地設置。The direct type backlight device according to claim 2, wherein the plurality of reflective bumps in each of the central regions are arranged densely as they are closer to the center of the reflective region, and farther away from the reflective region The center of each of the reflective bumps is arranged more dispersedly; the more the reflective bumps in each of the first peripheral areas are arranged more densely as they are closer to the central area, and arranged more dispersed as they are farther from the central area; The plurality of reflective bumps in each of the second peripheral areas are arranged densely as they are adjacent to the first peripheral area, and are arranged more dispersedly as they are farther from the first peripheral area. 如請求項3所述的直下式背光裝置,其中,所述第一外圍區域的外緣至所述中心區域的中心的直線距離,為所述中心區域的中心到所述中心區域的外緣的直線距離的2倍;所述第二外圍區域的外緣至所述中心區域的中心的直線距離,為所述中心區域的中心到所述中心區域的外緣的直線距離的3倍。The direct type backlight device according to claim 3, wherein the linear distance from the outer edge of the first peripheral area to the center of the central area is the distance from the center of the central area to the outer edge of the central area 2 times the linear distance; the linear distance from the outer edge of the second peripheral area to the center of the central area is 3 times the linear distance from the center of the central area to the outer edge of the central area. 如請求項1所述的直下式背光裝置,其中,各個所述反射凸點的外徑介於30微米(um)至500微米(um);各個所述反射凸點的高度介於1微米(um)至10微米(um)。The direct type backlight device according to claim 1, wherein the outer diameter of each of the reflective bumps is between 30 microns (um) and 500 microns (um); the height of each of the reflective bumps is between 1 micron ( um) to 10 microns (um). 如請求項1所述的直下式背光裝置,其中,所述反射片體的厚度介於0.3公釐(mm)至2公釐(mm)。The direct type backlight device according to claim 1, wherein the thickness of the reflective sheet body is between 0.3 millimeters (mm) and 2 millimeters (mm). 如請求項1所述的直下式背光裝置,其中,所述發光單元所發出的光束能通過所述基材未設置有所述反射凸點的位置而向遠離所述光源座的方向射出,所述基材彼此相反的兩個寬側面分別定義為一內側面及一外側面,所述反射片體還包含多個微結構,多個所述微結構形成於所述基材的所述外側面,通過所述基材而向遠離所述光源座的方向射出的部分光束將被所述微結構反射,而射向所述光源座的方向。The direct type backlight device according to claim 1, wherein the light beam emitted by the light-emitting unit can be emitted in a direction away from the light source base through a position where the reflective bumps are not provided on the substrate, so The two wide sides of the substrate opposite to each other are respectively defined as an inner side and an outer side, the reflective sheet body further includes a plurality of microstructures, and a plurality of the microstructures are formed on the outer side of the substrate , A part of the light beam emitted in a direction away from the light source base through the substrate will be reflected by the microstructure and directed toward the light source base. 如請求項7所述的直下式背光裝置,其中,各個所述微結構包含至少一個所述正三稜錐體或至少一個正四稜錐體,所述正三稜錐體的底面或所述正四稜錐體的底面位於所述外側面。The direct type backlight device according to claim 7, wherein each of the microstructures includes at least one regular triangular pyramid or at least one regular quadrangular pyramid, and the bottom surface of the regular triangular pyramid or the regular quadrangular pyramid The bottom surface of the body is located on the outer side surface. 如請求項1至8其中任一項所述的直下式背光裝置,其中,各個所述發光單元還包含一發光二極體、一半反射件及一透光體,所述發光二極體具有五個發光面,所述透光體包覆所述發光二極體設置,所述發光二極體所發出的光束能通過所述透光體向外射出,所述半反射件設置於所述透光體的一頂面,所述半反射件能阻擋通過所述透光體的所述頂面向外射出的部份光束;其中,各個所述發光單元的寬度介於0.1公釐(mm)至2公釐(mm),各個所述發光單元的長度介於0.1公釐(mm)至2公釐(mm),各個所述發光單元的高度介於0.1公釐(mm)至1.7公釐(mm)。The direct type backlight device according to any one of claims 1 to 8, wherein each of the light-emitting units further includes a light-emitting diode, a half-reflective member, and a light-transmitting body, and the light-emitting diode has five A light-emitting surface, the light-transmitting body is arranged to cover the light-emitting diode, the light beam emitted by the light-emitting diode can be emitted out through the light-transmitting body, and the semi-reflective member is arranged on the light-emitting diode. On a top surface of the light body, the semi-reflective member can block part of the light beams emitted outward through the top surface of the light-transmitting body; wherein the width of each of the light-emitting units is between 0.1 millimeters (mm) and 2 millimeters (mm), the length of each light-emitting unit is between 0.1 millimeters (mm) to 2 millimeters (mm), and the height of each light-emitting unit is between 0.1 millimeters (mm) and 1.7 mm ( mm). 如請求項9所述的直下式背光裝置,其中,各個所述反射腔的寬度與高度比介於2:1至6:1;其中,所述反射面的反射率高於90%。The direct type backlight device according to claim 9, wherein the ratio of the width to the height of each of the reflective cavities is between 2:1 and 6:1; wherein the reflectivity of the reflective surface is higher than 90%.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114078398A (en) * 2021-11-22 2022-02-22 深圳创维-Rgb电子有限公司 Spliced screen and display device
CN115963663A (en) * 2022-12-29 2023-04-14 深圳创维-Rgb电子有限公司 Backlight module and display device
TWI844429B (en) * 2023-07-19 2024-06-01 達運精密工業股份有限公司 Backlight module

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114078398A (en) * 2021-11-22 2022-02-22 深圳创维-Rgb电子有限公司 Spliced screen and display device
CN115963663A (en) * 2022-12-29 2023-04-14 深圳创维-Rgb电子有限公司 Backlight module and display device
TWI844429B (en) * 2023-07-19 2024-06-01 達運精密工業股份有限公司 Backlight module

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