TW202109938A - Full color led display panel and manufacturing method thereof - Google Patents

Abstract

The present invention discloses a full color LED display panel and manufacturing method thereof. The method is designed to make a plurality of lighting structures on a 2D material layer that is formed on a glass substrate. During the execution of the method, each of the lighting structures is formed with a recessed groove for accommodating quantum dots. Therefore, a red sub-pixel is constituted by one lighting structure and one recessed groove accommodating with red QDs, a green sub-pixel is constituted by one lighting structure and one recessed groove accommodating with green QDs, and a blue sub-pixel is constituted by one lighting structure and one recessed groove. It is easy to know that, one red sub-pixel, one green sub-pixel and one blue sub-pixel constitute a pixel, such that the full color LED display panel includes M×N numbers of the pixels.

Description

Full-color LED display panel and manufacturing method thereof

The present invention relates to the technical field of display panels, in particular to a full-color LED display panel and a manufacturing method thereof.

LEDs are currently widely used light-emitting elements, which have the advantages of small size and long service life, so they are widely used in human daily life. LED packaging structure types are usually classified according to characteristics such as the luminous color of the LED, the luminous brightness of the LED, and the size of electronic components. Generally speaking, the packaging structure used for the electronic components of the ultra-high-brightness LED is a plastic leaded chip carrier (Plastic Leaded Chip Carrier, PLCC), while the packaging structure of the electronic components of the small-sized LED is usually a tetragonal plane. Pin package (Quad flat no leads, QFN).

As LED backlights are widely used in displays, tablet computers, and smart phones, the size of LED electronic components is required to be further reduced to a micron size. Mini LED, also known as "sub-millimeter light-emitting diode", was first proposed by EPISTAR Corporation. The diagonal length of the die is between 50 microns and 60 microns. In recent years, Micro LED (Micro LED) has become a new generation of display technology. The LED die is further miniaturized so that the diagonal length of the die is less than 50 microns, and at the same time, the individual addressing of the pixel of each LED die is realized through the technology of thin film, arraying and individual driving and light emission.

Figure 1 shows a conventional micro light emitting diode display panel. The current technology can make a large number of micro light emitting diodes into a micro LED display panel. For example, in FIG. 1, the micro light emitting diode display panel 1'includes a substrate 10', a plurality of red light micro light emitting diodes RLED', a plurality of green light micro light emitting diodes GLED', and a plurality of Blue light-emitting diode BLED'. Wherein, the surface of the substrate 10' is provided with a plurality of electrical connection pads 101' for electrically connecting the plurality of red light emitting diodes RLED', the plurality of green light emitting diodes GLED' and The plurality of blue light-emitting diodes BLED'. Electronic engineers who are familiar with the design and production of displays must know that a red light emitting diode RLED', a green light emitting diode GLED' and a blue light emitting diode BLED' form a light emitting diode display. One pixel of panel 1'.

It is worth noting that the micro light emitting diode display panel 1'with a resolution of 4K2K has 4096×2160 pixels; that is to say, the micro light emitting diode display panel 1'with a resolution of 4K2K contains at least 24.88 million Slightly emitting diodes. It can be seen that how to arrange a large number of micro light emitting diodes (RLED', GLED', BLED') on the substrate 10' has become the most important manufacturing problem of the micro light emitting diode display panel 1'.

Through high-precision equipment, a large number of micron-level LEDs The die is arranged on a backplane, and this process is called Mass transfer. For example, US Patent Publication No. 2018/0053742A1 discloses a method for transferring a large amount of electronic components. Depending on the end product, the backplane used in the Micro LED display panel is also different. In more detail, small and medium-sized TVs, monitors, display screens of notebook computers, and display screens of tablet computers usually use a glass substrate as the backplane, while large-scale TVs or outdoor signage are based on PCB substrates. However, semiconductor device engineers who have actually used the method of mass transfer of electronic components should know that in the process of applying the conventional mass transfer process, some LED dies are damaged by external stress.

Simply put, the existing known methods for transferring a large amount of electronic components still have insurmountable shortcomings in practical applications. In view of this, the inventor of this case tried his best to research and invent, and finally developed and completed a full-color LED display panel of the present invention and its manufacturing method.

The main purpose of the present invention is to provide a full-color LED display panel and a manufacturing method thereof. The manufacturing method uses a two-dimensional material to fabricate a plurality of light-emitting structures on a glass substrate covered with a two-dimensional material layer (for example, graphene). In particular, the manufacturing method of the present invention forms a containing cup on each light-emitting structure to contain the quantum dots. In this design, the containing cup containing the red light quantum dots and a light-emitting structure form a red sub-pixel, and the containing cup containing the green light quantum dots and a light-emitting junction The structure constitutes a green sub-pixel, and the receiving cup without any quantum dots and a light-emitting structure constitute a blue sub-pixel. It is easy to understand that one red sub-pixel, one green sub-pixel and one blue sub-pixel together form one pixel), and the entire full-color LED display panel includes M×N pictures Vegetarian.

Therefore, in order to achieve the above-mentioned main purpose of the present invention, the inventor of this case provides an embodiment of the full-color LED display panel, which includes: a substrate; a two-dimensional material layer formed on the substrate; and a buffer layer , Formed on the two-dimensional material layer; a plurality of light-emitting structures formed on the buffer layer, and each light-emitting structure includes: a first semiconductor material layer formed on the buffer layer; an active layer, Formed on the first semiconductor material layer; and a second semiconductor material layer formed on the active layer; a plurality of surface current diffusion layers formed on each of the second semiconductor material layers; and a plurality of organic The accommodating elements are respectively formed on each of the surface current diffusion layers, so that each of the organic accommodating elements is located above the second semiconductor material layer via the surface current diffusion layer; a plurality of first electrodes Layers, respectively formed on each of the first semiconductor material layers; and a plurality of second electrode layers, respectively formed through each of the surface current diffusion layers Is formed on each of the second semiconductor material layers; wherein, a first part of the plurality of organic accommodating members is used for accommodating a plurality of red light conversion materials, and a second part of the plurality of organic accommodating members is Used for accommodating a plurality of green light conversion materials, and the remaining part of the plurality of organic accommodating parts does not accommodate the red light conversion material or the green light conversion material; wherein, the red light conversion material is accommodated One said organic accommodating part, one said surface current diffusion layer, one said light-emitting structure, one said first electrode, and one said second electrode of materials constitute a red sub-pixel; wherein, the housing There is one said organic container, one said surface current diffusion layer, one said light-emitting structure, one said first electrode, and one said second electrode with said green light conversion material to form a green sub-picture Element; wherein, one of the organic accommodating member that does not contain the red light conversion material or the green light conversion material, one of the surface current diffusion layer, one of the light-emitting structure, one of the first electrode , And a second electrode system to form a blue sub-pixel.

In addition, the inventor of this case also provides a method for manufacturing a full-color LED display panel, which includes the following steps: (1) Using dry transfer technology to transfer a two-dimensional material layer from an initial substrate to a substrate; (2) ) Using atomic layer deposition technology to form a buffer layer on the two-dimensional material layer (3) Using sputtering technology to form a first semiconductor material layer on the buffer layer; (4) Using atomic layer deposition technology to form an active layer on the first semiconductor material layer; (5) Using atoms Layer deposition technology to form a second semiconductor material layer on the active layer; (6) use sputtering technology to form a surface current diffusion layer on the second semiconductor material layer; (7) perform at least one etching process to A plurality of light-emitting structures are defined on the buffer layer; wherein each of the light-emitting structures includes a part of the first semiconductor material layer, a part of the active layer, and a part of the second semiconductor material layer And a part of the surface current diffusion layer, and the first semiconductor material layer of each of the light-emitting structures has an exposed electrode setting mesa, and the surface current diffusion layer of each of the light-emitting structures has an exposure window; (8) A first electrode layer is formed on the electrode setting mesas of the first semiconductor material layer of each light-emitting structure, and a first electrode layer is formed on the light-emitting structure through the exposure window. On the second semiconductor material layer; and (9) forming an organic accommodating member on each of the second semiconductor material layers, and allowing one of the plurality of organic accommodating members to accommodate a plurality of red light conversion Material, so that the second part of one of the plurality of organic accommodating parts accommodates a plurality of green light conversion materials, and the remaining part of the plurality of organic accommodating parts is not accommodated The red light conversion material or the green light conversion material.

In the foregoing embodiment of the full-color LED display panel and the manufacturing method thereof of the present invention, the initial substrate is a sapphire substrate, and the substrate can be any of the following: a glass substrate, a circuit board, or a flexible circuit board.

In the foregoing embodiments of the full-color LED display panel and the manufacturing method thereof of the present invention, the manufacturing material of the two-dimensional material layer can be any of the following: graphene, silicene, germanene ), stanene, phosphorene, borophene, transition-metal dichalcogenides (TMDCs), or boron nitride (BN).

In the foregoing embodiments of the full-color LED display panel and the manufacturing method thereof of the present invention, the red light conversion material includes a plurality of red light quantum dots, and the green light conversion material includes a plurality of green light quantum dots.

In the foregoing embodiments of the full-color LED display panel and the manufacturing method thereof of the present invention, the material of the buffer layer can be any one of the following: undoped GaN, aluminum nitride (AlN) , Or zinc oxide (ZnO).

In the foregoing embodiments of the full-color LED display panel and the manufacturing method thereof of the present invention, the manufacturing material of the first semiconductor material layer is n-type gallium nitride (n-GaN), and the first semiconductor material layer is n-type gallium nitride (n-GaN), and the first semiconductor material layer is n-type gallium nitride (n-GaN). The manufacturing material of the two semiconductor material layers is p-type gallium nitride (p-GaN).

In the foregoing embodiment of the full-color LED display panel and the manufacturing method of the present invention, the active layer forms a multiple quantum well structure between the first semiconductor material layer and the second semiconductor material layer, and the multiple quantum well The structure is a multiple alternate stacked structure of an undoped GaN layer and an indium gallium nitride (In _x Ga _{1-x N) layer.}

In the foregoing embodiments of the full-color LED display panel and the manufacturing method thereof of the present invention, the surface current diffusion layer can be made of any one of the following: indium tin oxide (ITO), antimony-doped dioxide Tin (Antimony-doped tin oxide, ATO), Fluorine-doped tin oxide (FTO), Indium zinc oxide (IZO), Gallium doped zinc oxide (Gallium doped zinc oxide, GZO) ), aluminum-doped zinc oxide (AZO), graphene, or silver nanowires.

In the foregoing embodiments of the full-color LED display panel and the manufacturing method thereof of the present invention, the organic accommodating member is made of an organic photoresist material.

In the foregoing embodiments of the full-color LED display panel of the present invention and the manufacturing method thereof, the manufacturing materials of the first electrode and the second electrode can be any one of the following: aluminum (Al), silver (Ag), Titanium (Ti), nickel (Ni), gold (Au), copper (Cu), chromium (Cr), platinum (Pt), a combination of any two of the foregoing, or a combination of any two or more of the foregoing.

<The present invention>

1‧‧‧Full-color LED display panel

10‧‧‧Substrate

10i‧‧‧Initial substrate

10C‧‧‧Copper film

10A‧‧‧Pyrolytic adhesive layer

11‧‧‧Two-dimensional material layer

12‧‧‧Buffer layer

13‧‧‧Surface current spreading layer

131‧‧‧Exposing the window

14‧‧‧Organic container

L1‧‧‧First semiconductor material layer

L2‧‧‧Active layer

L3‧‧‧Second semiconductor material layer

Lr‧‧‧First light-emitting structure

Lg‧‧‧Second light-emitting structure

Lb‧‧‧Third light-emitting structure

E1‧‧‧First electrode layer

E2‧‧‧Second electrode layer

RM‧‧‧Red light conversion material

GM‧‧‧Green light conversion material

S1-S9‧‧‧Step

<Learning>

RLED’‧‧‧Red light micro-emitting diode

GLED’‧‧‧Green Micro-Light Emitting Diode

BLED’‧‧‧Blue light micro-emitting diode

1’‧‧‧Display panel

101’‧‧‧Electrical connection pad

10’‧‧‧Substrate

Figure 1 shows a conventional micro light emitting diode display panel; Figure 2 shows a schematic perspective view of a full-color LED display panel of the present invention; Figure 3A shows a schematic perspective view of a first light-emitting structure; Figure 3B shows a schematic perspective view of a second light-emitting structure; Figure 3C shows a schematic perspective view of a third light-emitting structure Fig. 4A and Fig. 4B show a flow chart of a manufacturing method of a full-color LED display panel of the present invention; Figs. 5A to 5H show a schematic manufacturing flow chart of step S1; and Figs. 6A to 6J show the present invention A schematic manufacturing flow chart of a full-color LED display panel.

In order to be able to more clearly describe a full-color LED display panel and its manufacturing method proposed by the present invention, the preferred embodiments of the present invention will be described in detail below in conjunction with the drawings.

Structure of full-color LED display panel

Please refer to FIG. 2, which shows a schematic perspective view of a full-color LED display panel of the present invention. As shown in FIG. 2, the structure of the full-color LED display panel 1 of the present invention includes: a substrate 10, a two-dimensional material layer 11 formed on the substrate 10, and a two-dimensional material layer 11 formed on the substrate 10. The buffer layer 12, a plurality of light-emitting structures (Lr, Lg, Lb), a plurality of surface current diffusion layers 13, a plurality of organic housings 14, a plurality of first electrode layers E1, and a plurality of Two electrode layer E2.

It must be emphasized first that the filling effect in Figure 2 shows different material layers. The purpose is only to separate any two adjacent material layers, not to show the shape or color of each material layer. The present invention uses a glass substrate as the substrate 10, but it is not limited to this. In a feasible embodiment, the substrate 10 may also be a circuit board or a flexible circuit board. On the other hand, in an exemplary embodiment, the manufacturing material of the two-dimensional material layer 11 is graphene. However, in a feasible embodiment, the material of the two-dimensional material layer 11 may also be silicene, germanene, stanene, phosphorene, or borophene. , Transition-metal dichalcogenides (TMDCs), or Boron Nitride (BN). It is supplemented that the transition metal chalcogenide has the molecular formula MX ₂ , where M is any transition metal in the IVB-VIB group, and X is sulfur, selenium, or tellurium in the VIA group (chalcogen). Furthermore, the material of the buffer layer 12 can be any of the following: undoped GaN, aluminum nitride (AlN), or zinc oxide (ZnO).

Please refer to FIGS. 3A, 3B, and 3C at the same time, in which FIG. 3A shows a schematic perspective view of the first light-emitting structure, FIG. 3B shows a schematic perspective view of the second light-emitting structure, and FIG. 3C shows a schematic perspective view of the third light-emitting structure . According to the design of the present invention, the plurality of light-emitting structures (Lr, Lg, Lb) include: a plurality of first light-emitting structures Lr, a plurality of second light-emitting structures Lg, and a plurality of third light-emitting structures Lb. And, as can be seen from FIGS. 3A, 3B, and 3C, each of the first light-emitting structure Lr, each of the second light-emitting structure Lg, and each of the third light-emitting structure Lb includes: formed on the buffer layer 12 A first semiconductor material layer L1, an active layer L2 formed on the first semiconductor material layer L1, and a second semiconductor material layer L3 formed on the active layer L2. Preferably, the manufacturing material of the first semiconductor material layer L1 is n-type gallium nitride (n-GaN), and the manufacturing material of the second semiconductor material layer L2 is p-type gallium nitride (p-type gallium nitride, p-GaN). Moreover, the active layer L2 forms a multiple quantum well structure between the first semiconductor material layer L1 and the second semiconductor material layer L3, and the multiple quantum well structure is an undoped GaN (undoped GaN) Layer and an indium gallium nitride (In _x Ga _1-x N) layer in multiple alternate stacked structure.

Engineers who are familiar with the design and manufacture of LED components should know that the active material is composed of an undoped gallium nitride (undoped GaN) layer and an indium gallium nitride (In _x Ga _1-x N) layer. The layer L2 is mainly used to emit a blue light. Further, as shown in FIGS. 2, 3A, 3B, and 3C, the present invention also provides a surface current diffusion layer 13 on each of the second semiconductor material layers L3, and the manufacture of the surface current diffusion layer 13 The material can be any of the following: indium tin oxide (ITO), antimony-doped tin oxide (ATO), fluorine-doped tin oxide (FTO) , Indium zinc oxide (IZO), Gallium doped zinc oxide (GZO), Aluminum-doped zinc oxide (AZO), graphene, or silver nanowire.

In particular, in the present invention, an organic accommodating member 14 is simultaneously provided on each of the second semiconductor material layers L3; wherein, each of the organic accommodating members 14 is made of an organic photoresist material, and Each of the organic accommodating members 14 is located above the second semiconductor material layer L3 via the surface current diffusion layer 13. Furthermore, as shown in FIGS. 2, 3A, 3B, and 3C, the present invention also allows the first part of one of the plurality of organic accommodating members 14 to accommodate a plurality of red light conversion materials RM, so that the plurality of organic A second part of the accommodating member 14 accommodates a plurality of green light conversion materials GM, and the remaining part of the plurality of organic accommodating members 14 does not accommodate the red light conversion material RM or the green light conversion material GM. Designed in this way, one of said organic accommodating member 14 containing said red light conversion material RM, one said surface current diffusion layer 13, one said light-emitting structure, one said first electrode E1, and one said The second electrode E2 constitutes a red LED light-emitting element as a red sub pixel. In addition, one of the organic accommodating member 14 containing the green light conversion material GM, one of the surface current diffusion layer 13, one of the light emitting structure, one of the first electrode E1, and one of the first The two electrodes E2 form a red LED light-emitting element as a green sub pixel. At the same time, one of the organic accommodating member 14, one of the surface current diffusion layer 13, and each of the light-emitting structures, one of the organic accommodating members 14 that do not contain the red light conversion material RM or the green light conversion material GM The first electrode E1 and one of the second electrodes E2 form a red LED The light-emitting element is used as a blue sub pixel. According to the design of the present invention, the red light conversion material includes a plurality of red light quantum dots, and the green light conversion material includes a plurality of green light quantum dots. To put it simply, the present invention is specially designed so that one red sub-pixel, one green sub-pixel and one blue sub-pixel together form a pixel, and the entire full-color LED display panel 1 includes M×N pixels.

In particular, the present invention does not limit the size of the red LED light emitting element, the green LED light emitting element, and the blue LED light emitting element. The diagonal length of the die of each LED light-emitting element can be between 50 μm and 60 μm to become a Mini LED light-emitting element. Alternatively, the diagonal length of the die of each LED light-emitting element may be less than 50 microns to become a Micro LED light-emitting element. On the other hand, FIGS. 2, 3A, 3B, and 3C also show that a plurality of first electrode layers E1 are formed on each of the first semiconductor material layers L1, and a plurality of second electrode layers E2, respectively Each of the surface current diffusion layers 13 is formed on each of the second semiconductor material layers L3. It is easy to understand that through the first electrode layer E1 and the second electrode layer E2, an external driving circuit can selectively drive one or more of the red sub-pixels (that is, the first light-emitting structure Lr), one or A plurality of the green sub-pixels (that is, the second light-emitting structure Lg) and/or one or more of the blue sub-pixels (that is, the third light-emitting structure Lb) emit light. In a feasible embodiment, the manufacturing materials of the first electrode and the second electrode can be any of the following: aluminum (Al), silver (Ag), titanium (Ti), nickel (Ni), Gold (Au), copper (Cu), chromium (Cr), platinum (Pt), a combination of any two of the foregoing, or a combination of any two or more of the foregoing.

Manufacturing method of full-color LED display panel

Please refer to FIG. 4A and FIG. 4B, which show a flowchart of a manufacturing method of a full-color LED display panel of the present invention. As shown in FIG. 4A, the manufacturing method of the full-color LED display panel of the present invention first executes step S1: using dry release transfer technology to transfer a two-dimensional material layer 11 from an initial substrate 10i to a substrate 10. on. Please refer to FIGS. 5A to 5H at the same time, which show a schematic manufacturing flow chart of step S1. When step S1 is performed, as shown in FIG. 5A, a copper film 10C is first plated on an initial substrate 10i, where the initial substrate 10i may be a sapphire substrate. Next, as shown in FIG. 5B, a chemical vapor deposition (CVD) technique is used to form a two-dimensional material layer 11 on the copper film 10C, for example, a graphene layer. Continuing, as shown in FIG. 5C and FIG. 5D, a pyrolytic adhesive layer 10A is attached to the two-dimensional material layer 11, and the copper film 10C and the two-dimensional material layer 10A are pressed together by applying force to the pyrolytic adhesive layer 10A. The material layer 11 is separated from the initial substrate 10i. Next, as shown in FIGS. 5E and 5F, an etching solution is used to remove the copper film 10C, and then the pyrolytic adhesive layer 10A and the two-dimensional material layer 11 are attached to a substrate 10 (for example, a glass substrate). Finally, as shown in FIGS. 5G and 5H, after the pyrolytic adhesive layer 10A is removed by heating, a glass substrate coated with a graphene layer is obtained.

Continue to refer to Figures 4A and 4B, and please refer to Figures 6A to 6 at the same time 6J, which shows a schematic manufacturing flow chart of the full-color LED display panel of the present invention. As shown in FIG. 6A, after step S1 is completed, a substrate 10 covered with a two-dimensional material layer 11 is obtained. Next, as shown in FIG. 4A and FIG. 6B, the manufacturing method is followed by step S2: A buffer layer 12 is formed on the two-dimensional material layer 11 by using atomic layer deposition (ALD). In more detail, when step S2 is performed, the substrate 10 covered with the two-dimensional material layer 11 is first cleaned, and then the surface of the graphene (two-dimensional material layer 11) is plated on the surface of the graphene (the two-dimensional material layer 11) using the ALD method. Doped GaN (undoped GaN) film.

Continuing, as shown in FIG. 4A and FIG. 6C, the flow of the manufacturing method is followed by step S3: forming a first semiconductor material layer L1 on the buffer layer 12 by sputtering. In more detail, when step S3 is performed, a gallium nitride target is first combined with a sputtering gun, after the process gas is introduced, and the undoped gallium nitride (u An nGaN film is grown on the GaN) film (ie, the buffer layer 12) as the first semiconductor material layer L1. Next, as shown in FIGS. 4A and 6D, the flow of the manufacturing method is followed by step S4: forming an active layer L2 on the first semiconductor material layer L1 by using atomic layer deposition (ALD). When step S4 is performed, the undoped gallium nitride (u-GaN) film is first subjected to basic surface treatment, and then the ALD method is used to fabricate a multiple quantum well structure on the u-GaN film as the Active layer L2. Wherein, the multiple quantum well structure is a multiple alternate stack structure of an undoped gallium nitride (undoped GaN) layer and an indium gallium nitride (In _x Ga _1-x N) layer, and the u-GaN layer and The _{number of alternately stacked In x} Ga _1-x N layers is between 8 and 14 layers.

Next, as shown in FIGS. 4A and 6E, the manufacturing method is followed by step S5: A second semiconductor material layer L3 is formed on the active layer L2 using atomic layer deposition (ALD). When step S5 is performed, a basic surface treatment is performed on the multiple quantum well structure first, and then a pGaN film is fabricated on the active layer L2 using the ALD method to serve as the second semiconductor material layer L3. Continuing, as shown in FIGS. 4B and 6F, the flow of the manufacturing method is followed by step S6: forming a surface current diffusion layer 13 on the second semiconductor material layer L3 by using sputtering technology. In more detail, when step S6 is performed, a sputtering method is used to plate a layer of ITO transparent conductive film on the surface of the pGaN thin film to serve as the surface current diffusion layer 13.

Continuing, as shown in FIGS. 4B and 6G, the flow of the manufacturing method is followed by step S7: at least one etching process is performed to define a plurality of light-emitting structures (Lr, Lg, Lb) on the buffer layer 12. In particular, the etching process referred to here is the Mesa etching process of the LED element. And, the plurality of light-emitting structures includes a plurality of first light-emitting structures Lr, a plurality of second light-emitting structures Lg, and a plurality of third light-emitting structures Lb, wherein each of the light-emitting structures (Lr, Lg, Lb) includes one A part of the first semiconductor material layer L1, a part of the active layer L2, a part of the second semiconductor material layer L3, and a part of the surface current diffusion layer 13, and each The first semiconductor material layer L1 of the light emitting structure (Lr, Lg, Lb) has an exposed electrode setting mesa, and the surface current diffusion layer 13 of each light emitting structure (Lr, Lg, Lb) has an exposed窗131.

Next, as shown in FIG. 4B, FIG. 6H and FIG. 6I, the flow of the manufacturing method is followed by step S8: forming a first electrode layer E1 on the first semiconductor material of each of the light-emitting structures (Lr, Lg, Lb) The electrode of the layer L1 is disposed on the mesa, and a first electrode layer E1 is formed through the exposure window 131 on the second semiconductor material layer L3 of each of the light-emitting structures. Finally, as shown in FIG. 4B, FIG. 6J, FIG. 3A, and FIG. 3B, the flow of the manufacturing method is followed by step S9: forming an organic accommodating member 14 on each of the second semiconductor material layers L3, and making The first part of one of the plurality of organic accommodating members 14 accommodates a plurality of red light conversion materials RM, so that the second part of one of the plurality of organic accommodating members 14 accommodates a plurality of green light conversion materials GM, and the plurality of organic accommodating members 14 accommodate a plurality of green light conversion materials GM. The remaining part of the organic accommodating member 14 does not accommodate the red light conversion material RM or the green light conversion material GM.

After step S9 is completed, as shown in FIG. 2, one of the organic accommodating members 14, one of the surface current diffusion layers 13, one of the light-emitting structures, and one of the first accommodating members containing the red light conversion material RM An electrode E1 and one of the second electrodes E2 form a red sub pixel. In addition, one of the organic accommodating member 14 containing the green light conversion material GM, one of the surface current diffusion layer 13, one of the light emitting structure, one of the first electrode E1, and one of the first Two electrodes E2 series form a green Sub pixel. At the same time, one organic accommodating member 14, one surface current diffusion layer 13, and one light-emitting structure, one said The first electrode E1 and one of the second electrodes E2 form a blue sub pixel. According to the design of the present invention, the red light conversion material includes a plurality of red light quantum dots, and the green light conversion material includes a plurality of green light quantum dots. To put it simply, the present invention is specially designed so that one red sub-pixel, one green sub-pixel and one blue sub-pixel together form a pixel, and the entire full-color LED display panel 1 includes M×N pixels.

Thus, the above system has completely and clearly explained the full-color LED display panel and the manufacturing method thereof of the present invention. It must be emphasized that the above detailed description is a specific description of possible embodiments of the present invention, but this embodiment is not intended to limit the patent scope of the present invention. Any equivalent implementation or modification that does not deviate from the technical spirit of the present invention, All should be included in the patent scope of this case.

1‧‧‧Full-color LED display panel

10‧‧‧Substrate

11‧‧‧Two-dimensional material layer

12‧‧‧Buffer layer

13‧‧‧Surface current spreading layer

14‧‧‧Organic container

Lr‧‧‧First light-emitting structure

Lg‧‧‧Second light-emitting structure

Lb‧‧‧Third light-emitting structure

RM‧‧‧Red light conversion material

GM‧‧‧Green light conversion material

Claims (20)

A full-color LED display panel includes: a substrate; a two-dimensional material layer formed on the substrate; a buffer layer formed on the two-dimensional material layer; a plurality of light-emitting structures formed on the buffer layer And each light emitting structure includes: a first semiconductor material layer formed on the buffer layer; an active layer formed on the first semiconductor material layer; and a second semiconductor material layer formed on the On the active layer; a plurality of surface current diffusion layers are respectively formed on each of the second semiconductor material layers; a plurality of organic accommodating members are respectively formed on each of the surface current diffusion layers, so that each of the organic The accommodating members are all located above the second semiconductor material layer via the surface current diffusion layer; a plurality of first electrode layers are respectively formed on each of the first semiconductor material layers; and a plurality of second electrode layers , Are formed on each of the second semiconductor material layers through each of the surface current diffusion layers; wherein, a first part of the plurality of organic accommodating members is used for accommodating a plurality of red light conversion materials, the plurality of A second part of the organic accommodating member is used for accommodating a plurality of green light conversion materials, and the remaining part of the plurality of organic accommodating members does not accommodate the red light conversion material or the green light conversion material; Wherein, one of said organic accommodating member containing said red light conversion material, one said surface current diffusion layer, one said light-emitting structure, one said first electrode, and one said second electrode system are composed of A red sub-pixel; wherein, one of said organic accommodating member, one said surface current diffusion layer, one said light-emitting structure, one said first electrode, and one said green light conversion material are accommodated The second electrode constitutes a green sub-pixel; wherein, one of the organic accommodating parts that does not contain the red light conversion material or the green light conversion material, one surface current diffusion layer, and one The light-emitting structure, the first electrode, and the second electrode form a blue sub-pixel. For the full-color LED display panel described in item 1 of the scope of patent application, the substrate can be any of the following: a glass substrate, a circuit board, or a flexible circuit board. For the full-color LED display panel described in item 1 of the scope of patent application, the material of the two-dimensional material layer can be any of the following: graphene, silicene, germanene , Stanene, phosphorene, borophene, transition-metal dichalcogenides (TMDCs), or boron nitride (BN). According to the full-color LED display panel described in item 1 of the scope of patent application, the red light conversion material includes a plurality of red light quantum dots, and the green light conversion material includes a plurality of green light quantum dots. The full-color LED display panel described in the first item of the scope of patent application, wherein the buffer layer is formed on the substrate using atomic layer deposition technology, and the manufacturing material can be any of the following: undoped Gallium nitride (undoped GaN), aluminum nitride (AlN), or zinc oxide (ZnO). According to the full-color LED display panel described in item 1 of the scope of patent application, wherein the first semiconductor material layer is made of n-type gallium nitride (n-GaN), and the second semiconductor material layer is made of n-type gallium nitride (n-GaN). The manufacturing material of the semiconductor material layer is p-type gallium nitride (p-GaN). According to the full-color LED display panel described in claim 6, wherein the active layer forms a multiple quantum well structure between the first semiconductor material layer and the second semiconductor material layer, and the multiple quantum well structure It is a multiple alternate stacked structure of an undoped GaN layer and an indium gallium nitride (In _x Ga _{1-x N) layer.} For the full-color LED display panel described in item 1 of the scope of patent application, the material of the surface current diffusion layer can be any one of the following: indium tin oxide (Indium tin oxide, ITO), Antimony-doped tin oxide (ATO), Fluorine-doped tin oxide (FTO), Indium zinc oxide (IZO) , Gallium doped zinc oxide (Gallium doped zinc oxide, GZO), aluminum doped zinc oxide (Aluminum-doped zinc oxide, AZO), graphene, or nano silver wire. According to the full-color LED display panel described in item 1 of the scope of patent application, the organic accommodating member is made of an organic photoresist material. The full-color LED display panel described in the first item of the scope of patent application, wherein the material of the first electrode and the second electrode can be any one of the following: aluminum (Al), silver (Ag), titanium (Ti), nickel (Ni), gold (Au), copper (Cu), chromium (Cr), platinum (Pt), a combination of any two of the foregoing, or a combination of any two or more of the foregoing. A method for manufacturing a full-color LED display panel includes the following steps: (1) Using dry release transfer technology to transfer a two-dimensional material layer from an initial substrate to a substrate; (2) Using atomic layer deposition Technology to form a buffer layer on the two-dimensional material layer; (3) using sputtering technology to form a first semiconductor material layer on the buffer layer On; (4) using atomic layer deposition technology to form an active layer on the first semiconductor material layer; (5) using atomic layer deposition technology to form a second semiconductor material layer on the active layer; (6) using Sputtering technology forms a surface current diffusion layer on the second semiconductor material layer; (7) At least one etching process is performed to define a plurality of light-emitting structures on the buffer layer; wherein, each of the light-emitting structures includes A part of the first semiconductor material layer, a part of the active layer, a part of the second semiconductor material layer, and a part of the surface current diffusion layer, and the first part of each of the light-emitting structures A semiconductor material layer has an exposed electrode setting mesa, and the surface current diffusion layer of each light-emitting structure has an exposed window; (8) a first electrode layer is formed on the first semiconductor material of each light-emitting structure The electrode of the layer is disposed on the mesa, and a first electrode layer is formed on the second semiconductor material layer of each of the light-emitting structures through the exposure window; and (9) on each of the second semiconductor material layers An organic accommodating part is formed thereon, and a first part of the organic accommodating part is made to house a plurality of red light conversion materials, and a second part of the organic accommodating part is made to house a plurality of green lights Conversion material, and the remaining part of the plurality of organic accommodating members does not accommodate the red light conversion material or the green light conversion material. According to the method for manufacturing a full-color LED display panel described in claim 11, the initial substrate is a sapphire substrate, and the substrate can be any of the following: a glass substrate, a circuit board, or a flexible circuit board. According to the method for manufacturing a full-color LED display panel described in item 11 of the scope of patent application, the material of the two-dimensional material layer can be any of the following: graphene, silicene, germanene (germanene), stanene, phosphorene, borophene, transition-metal dichalcogenides (TMDCs), or boron nitride (BN). According to the method for manufacturing a full-color LED display panel as described in item 11 of the scope of patent application, the red light conversion material includes a plurality of red light quantum dots, and the green light conversion material includes a plurality of green light quantum dots. According to the method for manufacturing a full-color LED display panel described in item 11 of the scope of patent application, the material of the buffer layer can be any one of the following: undoped GaN, aluminum nitride ( AlN), or zinc oxide (ZnO). The method for manufacturing a full-color LED display panel as described in item 11 of the scope of patent application, wherein the manufacturing material of the first semiconductor material layer is N-type nitrogen Gallium nitride (n-type gallium nitride, n-GaN), and the second semiconductor material layer is made of p-type gallium nitride (p-GaN). According to the method for manufacturing a full-color LED display panel described in claim 16, wherein the active layer forms a multiple quantum well structure between the first semiconductor material layer and the second semiconductor material layer, and the multiple The quantum well structure is a multiple alternate stacked structure of an undoped GaN layer and an indium gallium nitride (In _x Ga _{1-x N) layer.} According to the method for manufacturing a full-color LED display panel described in item 11 of the scope of patent application, the material for the surface current diffusion layer can be any of the following: indium tin oxide (ITO), antimony doped Tin dioxide (Antimony-doped tin oxide, ATO), Fluorine-doped tin oxide (FTO), Indium zinc oxide (IZO), Gallium doped zinc oxide (Gallium doped zinc oxide) , GZO), aluminum-doped zinc oxide (Aluminum-doped zinc oxide, AZO), graphene, or nano silver wire. According to the method for manufacturing a full-color LED display panel described in item 11 of the scope of patent application, the organic accommodating member is made of an organic photoresist material. According to the method for manufacturing a full-color LED display panel as described in item 11 of the scope of patent application, the manufacturing materials of the first electrode and the second electrode can be any of the following: aluminum (Al), silver (Ag) ), titanium (Ti), nickel (Ni), gold (Au), copper (Cu), chromium (Cr), platinum (Pt), a combination of any two of the foregoing, or a combination of any two or more of the foregoing.

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