TW202046382A - Light-emitting element and display device, and method for manufacturing same - Google Patents

Abstract

The present invention efficiently performs the arrangement of light-emitting elements and the manufacture of image display devices. The red light-emitting diode includes a plurality of light-emitting layers that respectively emit red light, and a plurality of P layers and N layers joined to the light-emitting layer to emit red light in the light-emitting layer when a voltage is applied, and is a plurality of light-emitting layers. A layer and a plurality of P layers and N layers are juxtaposed and joined in sequence in the T direction. When manufacturing an image display device using red LEDs, red light-emitting diodes are scattered on the upper surface of the guide member arranged on the upper surface of the substrate.

Description

Light-emitting element, display device and manufacturing method thereof

The invention relates to a light-emitting element and a display device, and a method of manufacturing the light-emitting element and the display device.

The image display device using light-emitting diodes (Light Emitting Diode, LED) is composed of a plurality of small light-emitting diodes, so-called micro light-emitting diodes (hereinafter referred to as micro LEDs) arranged in a matrix. . Previously, red, blue, and green light-emitting diodes are different from each other in the base material and the film formed on the base material. Therefore, it is difficult to form these three-color light-emitting diodes on the same substrate by a semiconductor device manufacturing process. On the substrate. Therefore, when a full-color image display device is manufactured, it is necessary to separately manufacture the three-color micro-LEDs and then arrange the micro-LEDs in a predetermined configuration. As an example of the arrangement method, for example, Citation 1 has been proposed. [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2002-368282

According to a first aspect, there is provided a light-emitting element including a plurality of light-emitting layers each emitting light, and a plurality of semiconductor layers bonded to the plurality of light-emitting layers so that the light is emitted in the plurality of light-emitting layers when a voltage is applied , And the plurality of light-emitting layers and the plurality of semiconductor layers are sequentially arranged in a predetermined direction and joined.

According to a second aspect, there is provided a display device including the light-emitting element of the first aspect, and a substrate on which wiring for supplying power to the light-emitting layer is formed and the light-emitting element is bonded.

According to a third aspect, there is provided a method of manufacturing a light-emitting element, which is a method of manufacturing a light-emitting element of the first aspect, and includes the steps of forming the light-emitting element with a plurality of light-emitting layers and a plurality of semiconductor layers. Joining in parallel in the predetermined direction; and cutting the joined light-emitting element in a direction crossing the predetermined direction.

According to a fourth aspect, there is provided a method of manufacturing a display device, which is a method of manufacturing a display device of the second aspect, including the steps of: dispersing a plurality of light-emitting elements on the substrate; and dispersing light emission The element is bonded to the substrate.

Hereinafter, the first embodiment will be described with reference to FIGS. 1(A) to 6(A). Hereinafter, the light-emitting diode is also referred to as LED for short. Figure 1 (A) shows a light-emitting diode (hereinafter referred to as red LED) 10R that emits red light, a light-emitting diode (hereinafter referred to as blue LED) 10B that emits blue light, and green light according to this embodiment The light-emitting diode (hereinafter referred to as green LED) 10G. The shapes of LED 10R, LED 10B, and LED 10G are each a rectangular parallelepiped with a square cross-sectional shape and a height (length) higher than the length of the side of the cross-section. As an example, the shapes of LED 10R, LED 10B, and LED 10G are such that the length of the side of the cross section is about 20 μm to 100 μm, and the height is about 1.5 to 3 times the length of the side. That is, LED 10R, LED 10B, and LED 10G are micro LEDs, respectively. In addition, the red LED 10R has the largest cross-sectional area and the lowest height, the blue LED 10B has a smaller cross-sectional area than the red LED 10R and is higher than the red LED 10R, and the green LED 10G has the smallest cross-sectional area and the highest height. Furthermore, the shapes of LED 10R, LED 10B, and LED 10G may be arbitrary as long as they are different in shape. Hereinafter, the direction of the height (length) of LED 10R, LED 10B, and LED 10G will be described as the T direction.

In addition, the red LED 10R (red micro LED) is a first P-type semiconductor layer (hereinafter referred to as P layer) 12P1 (first semiconductor layer), a first light-emitting layer 12R1, and an N-type semiconductor layer (hereinafter , Called N layer) 12N (second semiconductor layer), second light emitting layer 12R2, and second P layer 12P2 (first semiconductor layer) are formed. The conduction forms of the P layer 12P1, the P layer 12P2 and the N layer 12N are different. In addition, the light-emitting layer 12R1 and the light-emitting layer 12R2 may also be regarded as a part of the semiconductor layer. In addition, the build-up layer may also be called multiple bonding. In this embodiment, the T direction is the joining direction (stacking direction) of the light emitting layer and the semiconductor layer.

In the light-emitting layer 12R1 (12R2), from the P layer 12P1 (12P2) to the N layer 12N, a so-called p ^- layer with a hole density lower than that of the P layer 12P1 (12P2) and an electron density lower than that of the N layer 12N The so-called n ^- layer. Similarly, the blue LED 10B (blue micro LED) is formed by sequentially stacking the first P layer 14P1, the first light emitting layer 14B1, the N layer 14N, the second light emitting layer 14B2, and the second P layer 14P2 along the T direction. The green LED 10G (green micro LED) is formed by sequentially stacking a first P layer 16P1, a first light emitting layer 16G1, an N layer 16N, a second light emitting layer 16G2, and a second P layer 16P2 along the T direction.

As an example, the red LED 10R is formed on the surface of a substrate containing gallium phosphide (GaP) or gallium arsenide (GaAs) to form gallium phosphide (GaP (Zn, O)) or arsenide added with zinc, oxygen, etc. Aluminum gallium (GaAlAs) and other semiconductor layers (P layer, N layer) and light-emitting layers are manufactured. Blue LED 10B is formed on the surface of a substrate containing sapphire or silicon carbide (SiC) to form indium gallium nitride (InGaN) and other semiconductor layers and light-emitting layers. Green LED 10G is formed on the surface of a substrate containing sapphire or SiC, and a semiconductor layer such as gallium phosphide (GaP(N)) or InGaN added with nitrogen, etc. The light-emitting layer is manufactured. As described above, the materials of the base material, semiconductor layer, and light-emitting layer of LED 10R, LED 10B, and LED 10G are different from each other. In addition, the materials of at least one of the substrate, the semiconductor layer, and the light-emitting layer may be different for the LED 10B and the LED 10G. Furthermore, the base material, semiconductor layer, and light-emitting layer materials of LED 10R, LED 10B, and LED 10G are arbitrary, and the base material, semiconductor layer, and light-emitting layer materials of LED 10R, LED 10B, and LED 10G may be the same as each other. .

As shown in FIG. 1(B), in the red LED 10R, the P layer 12P1, the P layer 12P2, and the N layer 12N are respectively symmetrical to the straight line 18 (line symmetry) that becomes the center in the T direction. Hereinafter, symmetrical to the straight line 18 that becomes the center in the T direction is also simply referred to as symmetrical in the T direction. In order to use the red LED 10R to manufacture an image display device (details will be described later), as shown in FIG. 1(C), the red LED 10R is provided in the guide member 30 on the substrate 22, and the P layer 12P1 is connected via the wiring 28A and the wiring 28C. , When a positive voltage is applied to the P layer 12P2 and a negative voltage (or grounded) is applied to the N layer 12N via the wiring 28B, red light is generated from the light emitting layer 12R1 and the light emitting layer 12R2 of the red LED 10R in all directions (including the side direction) . At this time, since the wide side surface of the red LED 10R faces the display direction, sufficient light intensity is obtained in the display direction. In addition, since the two light-emitting layers 12R1 and 12R2 emit light at the same time, the light intensity of the light-emitting layer is twice that of one light-emitting diode. In addition, it is also possible to control the balance of the light intensity of the red light output from the light-emitting layer 12R1 and the light-emitting layer 12R2 by different voltages applied to the P layer 12P1 and the P layer 12P2.

In addition, since the P layer 12P1, the P layer 12P2, and the N layer 12N are symmetrical in the T direction for the red LED 10R, even if the red LED 10R is installed on the substrate 22 with the T direction reversed, the wiring 28A-wiring will not be changed. In the case of the pattern of 28C, without changing the voltage applied to the wiring 28A to the wiring 28C, the red LED 10R is made to emit light in the same manner as before the direction is reversed. This phenomenon is the same in other LED 10B and LED 10G. Therefore, the LED 10R, LED 10B, and LED 10G can be arranged on the substrate 22 efficiently.

Furthermore, in the red LED 10R, the light emitting layer 12R1 and the light emitting layer 12R2 are also symmetrical in the T direction. Therefore, even if the red LED 10R is reversed in the T direction, the color tone does not change. In addition, it can also replace the red LED 10R, as shown in Figure 1 (B), manufacture (use) the first N layer 12N1, the first light-emitting layer 12R1, the P layer 12P, the second light-emitting layer 12R2, and the second N layer in the T direction. The red LED 10RA formed by joining the layers 12N2. In other words, the red LED 10RA is a structure in which the P layer and the N layer of the red LED 10R are exchanged. For the red LED 10RA, the N layer 12N1, the N layer 12N2, the light emitting layer 12R1, the light emitting layer 12R2, and the P layer 12P are symmetrical in the T direction, respectively. Therefore, even if the red LED 10RA is reversed in the T direction and installed on the substrate 22, the red LED 10RA emits light in the same manner as before the direction is reversed.

Next, FIG. 2(A) shows a full-color image display device 20 using LED 10R, LED 10B, and LED 10G (three-color micro LED) of this embodiment. The image display device 20 includes: a display portion, on the upper surface of a substantially rectangular substrate 22 including an insulator, arranged in a matrix to fix red LEDs 10R, blue LEDs 10B, and green LEDs 10G; and a control portion 24, for many The on/off and light intensity of each LED 10R, LED 10B, and LED 10G are individually controlled. Furthermore, in FIG. 2(A) and the drawings referred to below, for convenience of description, the LED 10R, the LED 10B, and the LED 10G are enlarged to be quite larger than the actual size. Hereinafter, the X-axis and Y-axis will be taken along the long-side direction and the short-side direction of the substrate 22, respectively. In this embodiment, as an example, the T direction, which is the joining direction of the LED 10R, LED 10B, and LED 10G, is a direction parallel to the X axis (X direction). In this embodiment, the red LED 10R, the blue LED 10B, and the green LED 10G are respectively arranged at a predetermined pitch in the Y direction along a straight line parallel to the Y axis, and a row of red LEDs 10R, 10R and 10G are arranged at a predetermined pitch in the X direction. One row of blue LED 10B and one row of green LED 10G. The pitch of the arrangement in the X direction and the Y direction of LED 10R, LED 10B, and LED 10G is, for example, about 100 μm to 200 μm, and the number of arrangement in the X direction and Y direction of LED 10R, LED 10B, and LED 10G is about 1000, respectively. . Furthermore, the arrangement of the LED 10R, the LED 10B, and the LED 10G is arbitrary, and the LED 10R, the LED 10B, and the LED 10G may be arranged in a checkered pattern, for example.

In addition, as shown in FIG. 2(B), in the area where the LED 10R, LED 10B, and LED 10G are provided on the upper surface of the substrate 22, P layers 12P1 and P layers are formed for the LED 10R, LED 10B, and LED 10G. 12P2, P layer 14P1, P layer 14P2 and P layer 16P1, P layer 16P2 (refer to FIG. 1(A)). Wiring 28A, wiring 28C, wiring 28D, wiring 28F, wiring 28G, wiring 28I, and to the LED 10R, LED 10B, and N-layer 12N, N-layer 14N, and N-layer 16N of LED 10G have wiring 28B, wiring 28E, and wiring 28H to which voltage is applied. In addition, on the contact portions of the wiring 28A to the wiring 28I with the corresponding P layer 12P1 or the like or the N layer 12N, etc., there are formed thin disc-shaped terminal portions 26A, terminal portions 26B, terminal portions 26C, and terminal portions 26D. The terminal portion 26E, the terminal portion 26F, the terminal portion 26G, the terminal portion 26H, and the terminal portion 26I. The terminal portion 26A to the terminal portion 26I are formed on the corresponding P layer or N layer of a material (for example, solder) that can be soldered by heating. Furthermore, the wiring 28A to the wiring 28I may be formed of solderable materials. The control unit 24 controls the application to the wiring 28A to the wiring 28I for each of the plurality of LEDs 10R, LED 10B, and LED 10G, and for each of the two light-emitting layers in each of the LEDs 10R, LED 10B, and LED 10G. The voltage. As a result, an arbitrary image can be displayed in full color and with high definition using the display unit. Furthermore, the terminal portion 26A to the terminal portion 26I (and the wiring 28A to the wiring 28I) may be formed of a conductive adhesive.

Next, with reference to the flowchart of FIG. 3, an example of the manufacturing method of LED 10R, LED 10B, LED 10G (micro LED), and the image display device 20 of this embodiment is demonstrated. For the production, a thin film forming apparatus not shown, a coater/developer of a resist agent, and a resist that transfer and expose the mask pattern to the surface of the substrate are used. Exposure equipment, etching equipment, inspection equipment and dicing equipment, etc.

First, in step 102 of FIG. 3, a semiconductor device manufacturing process is used to laminate a P layer and a light-emitting layer on the surfaces of three disc-shaped substrates (not shown) used to manufacture LED 10R, LED 10B, and LED 10G. , N-layer, light-emitting layer, and P-layer to manufacture 3 types of wafers. Then, in step 104, the substrate portion is separated (removed) from the wafers for LED 10R, LED 10B, and LED 10G by etching or the like, and multiple wafers for each color are cut out by a dicing device. One LED 10R, LED 10B, LED 10G. Thus, a plurality of red LED 10R, blue LED 10B, and green LED 10G are manufactured.

In addition, in step 106, as shown in FIG. 4(A), the substrate 22 and the guide member 30 of the image display device 20 are manufactured. In the area 23R, area 23B, and area 23G where the LED 10R, LED 10B, and LED 10G are arranged on the upper surface of the substrate 22 (for example, positions are predetermined based on the ends of the substrate 22 in the X and Y directions), The wiring 28A to the wiring 28I, the terminal portion 26A to the terminal portion 26I, and the like are respectively formed (see FIG. 2(B)). In addition, the control unit 24 is also manufactured. The guide member 30 is approximately the same size as the substrate 22. The guide member 30 is arranged in the same arrangement as the LED 10R, LED 10B, and LED 10G of FIG. 2(A), and is formed in a matrix that can accommodate red The rectangular opening 32R of the LED 10R, the rectangular opening 32B that can accommodate the blue LED 10B, and the rectangular opening 32G that can accommodate the green LED 10G. The opening 32R, the opening 32B, and the opening 32G are formed slightly larger than the corresponding sides of the LED 10R, LED 10B, and LED 10G. In this embodiment, the LED 10R, LED 10B, and LED 10G gradually become elongated in shape. Therefore, when the LED 10R, LED 10B, and LED 10G are arranged such that the side surfaces are in contact with the substrate 22, the opening 32R, the opening 32B, and the opening In 32G, only red LED 10R, blue LED 10B and green LED 10G can be accommodated respectively.

The guide member 30 may be used only when the LED 10R, LED 10B, and LED 10G are arranged on the substrate 22. When the guide member 30 is removed after the arrangement is completed, the guide member 30 may be made of metal (aluminum, etc.), for example. Or ceramics. On the other hand, when the guide member 30 is still mounted on the substrate 22, the guide member 30 may be formed of synthetic resin or the like. The thickness of the guide member 30 around the opening 32R, the opening 32B, and the opening 32G is about the length of the side of the cross section of the green LED 10G with the smallest cross-sectional area.

Then, in step 108, the opening 32R, the opening 32B, and the opening 32G of the guide member 30 are opposed to the substrate 22 in such a manner that the regions 23R, 23B, and 23G of the LED 10R, LED 10B, and LED 10G are arranged to face each other. 22 performs positioning of the guide member 30, and as shown in FIG. 4(B), the guide member 30 is arranged on the upper surface of the substrate 22. At this time, the longitudinal directions of the opening 32R, the opening 32B, and the opening 32G of the guide member 30 are parallel to the X direction. When the guide member 30 is removed from the substrate 22 after arranging the LED 10R, LED 10B, and LED 10G, the guide member 30 may be held by a supporting member (not shown) at a slight interval from the substrate 22, for example. In addition, when the guide member 30 is still mounted on the substrate 22, the guide member 30 may be fixed to the substrate 22 by bonding or the like. Furthermore, the manufacturing steps of the LED 10R and the like in step 102 and step 104 and the manufacturing steps of the substrate and the like in step 106 and step 108 may also be performed substantially in parallel.

In the next step 112, as shown in FIG. 5(A), the plurality of LEDs 10R, 10R, The LED 10B and the LED 10G are scattered (scattered) on the upper surface of the guide member 30 arranged on the substrate 22. As a result, as shown in FIG. 5(B), the red LED 10R, the blue LED 10B, and the green LED 10G are housed in the opening 32R, the opening 32B, and the opening of the guide member 30 so that the side surfaces thereof are in contact with the substrate 22. 32G. In the next step 114, the LED 10R, LED 10B, and LED 10G that are located on the upper surface of the guide member 30 and are not accommodated in the opening 32R, the opening 32B, and the opening 32G are removed. Furthermore, the step 114 can also be performed after fixing the LED 10R, the LED 10B, and the LED 10G on the substrate 22 as described later. Then, in step 116, it is checked whether the corresponding LED 10R, LED 10B, and LED 10G are accommodated in all the openings 32R, 32B, and 32G of the guide member 30 by the inspection apparatus not shown in figure. Then, when there are openings 32R, 32B, and 32G that do not accommodate the LED 10R, LED 10B, or LED 10G, steps 112 and 114 are repeated until the LED 10R, LED 10R, and LED are accommodated in all the openings 32R, 32B, and 32G. Up to 10B, LED 10G.

Then, when the LED 10R, the LED 10B, and the LED 10G are accommodated in all the openings 32R, 32B, and 32G, the process proceeds to step 118, and the substrate 22 is heated from the bottom. In this case, a flexible member (not shown) may be used to urge the upper part of the LED 10R, LED 10B, and LED 10G toward the substrate 22 side. Thus, the terminal portion 26A to the terminal portion 26I (and the wiring 28A to the wiring 28I) of the substrate 22 shown in FIG. 2(B) are soldered to the P layer or the N layer of the corresponding LED 10R, LED 10B, and LED 10G, and the LED The 10R, the LED 10B, and the LED 10G are fixed to the upper surface of the substrate 22 in a state in which the P layer and the N layer are electrically conductive with the corresponding wiring 28A to the wiring 28I, respectively. Thereafter, in step 120, it is determined whether or not to remove the guide member 30. When the guide member 30 is removed, the process proceeds to step 122. As shown in FIG. 6(A), the guide member 30 is removed from the substrate 22. After that, in step 124, installation of cover glass (cover glass) covering the LED 10R, LED 10B, and LED 10G is performed, thereby manufacturing the image display device 20. When the guide member 30 is not removed, the operation shifts from step 120 to step 124. Furthermore, when the terminal portion 26A to the terminal portion 26I (and the wiring 28A to the wiring 28I) are formed with a conductive adhesive, the heating step of the substrate 22 in step 118 can be omitted.

As described above, in this embodiment, by dispersing a plurality of LEDs 10R, LEDs 10B, and LEDs 10G on the upper surface of the guide member 30, the upper surface of the substrate 22 can be efficiently arranged in a desired arrangement. Three kinds of LED 10R, LED 10B, LED 10G. At this time, since the P layer 12P1, P layer 12P2, etc., and N layer 12N (semiconductor layer) are symmetrical in the T direction, the LED 10R, LED 10B, and LED 10G are symmetrical with respect to the opening 32R, opening 32B, and opening of the guide member 30. 32G accommodates LED 10R, LED 10B, and LED 10G in the T direction (X direction) reversed. Without changing the voltage applied to wiring 28A to wiring 28I, LED 10R, LED 10B, and LED 10G Shine in the same way. Therefore, the image display device 20 can be manufactured more efficiently.

As described above, the red LED 10R (micro LED) of this embodiment is a light-emitting element that includes a plurality of light-emitting layers 12R1, 12R2 that emit red light, and the light-emitting layer 12R1 and the light-emitting layer 12R1 when a voltage is applied. A plurality of P layers 12P1, a P layer 12P2 (first semiconductor layer), and an N layer 12N (second semiconductor layer) are joined to the light emitting layer 12R1 and the light emitting layer 12R2 in the manner of emitting red light, and the plurality of light emitting layers 12R1 The light emitting layer 12R2 and the plurality of P layers 12P1, P layers 12P2, and N layers 12N (semiconductor layers) are arranged in order in the T direction (joining direction) and joined. In addition, the blue LED 10B and the green LED 10G are also the same light-emitting elements.

When the image display device 20 is manufactured using LED 10R, LED 10B, and LED 10G, only by dispersing the LED 10R, LED 10B, and LED 10G on the upper surface of the guide member 30 on the substrate 22, the LED 10R, LED 10B, and LED 10G are accommodated in opening 32R, opening 32B, and opening 32G of guide member 30, so that LED 10R, LED 10B, and LED 10G are efficiently arranged in a desired configuration. Furthermore, for example, when the P layer 12P1, P layer 12P2, and N layer 12N (semiconductor layer) of the red LED 10R are asymmetrical in the T direction, the red LED 10R can also be disposed on the substrate 22, for example, by the control unit 24 To detect the direction in which the current of the red LED 10R flows (the arrangement state of the P layer 12P1, the P layer 12P2, and the N layer 12N), and change the voltage supplied to the red LED 10R based on the detection result.

In addition, the image display device 20 of this embodiment includes LED 10R, LED 10B, and LED 10G, and the light-emitting layer 12R1, light-emitting layer 12R2, light-emitting layer 14B1, light-emitting layer 14B2, light-emitting layer 16G1, and light-emitting layer 16G2 are formed. The power wiring 28A to the wiring 28I are joined to the substrate 22 of the LED 10R, LED 10B, and LED 10G. The image display device 20 can arrange the LED 10R, the LED 10B, and the LED 10G on the substrate 22 with high precision and efficiency, and therefore can be manufactured efficiently.

In addition, the manufacturing method of the red LED 10R of this embodiment includes: step 102, in order to form the red LED 10R, the light emitting layer 12R1, the light emitting layer 12R2, the P layer 12P1, the P layer 12P2, and the N layer 12N are juxtaposed in the T direction. The ground is bonded to manufacture a wafer; and in step 104, the wafer including the bonded red LED 10R is cut in a direction orthogonal to the T direction. According to the manufacturing method, the red LED 10R having a plurality of light-emitting layers 12R1 and 12R2 can be efficiently manufactured.

In addition, the manufacturing method of the image display device 20 of the present embodiment includes: step 112, dispersing a plurality of LEDs 10R, LED 10B, and LED 10G on the substrate 22; and step 118, welding the substrate 22 by heating The scattered LED 10R, LED 10B, and LED 10G are joined to the substrate 22. According to the manufacturing method, the LED 10R, LED 10B, and LED 10G can be efficiently arranged in a desired configuration by dispersing LED 10R, LED 10B, and LED 10G, so that the image display device can be efficiently manufactured 20.

In addition, the following modifications can be made in the above-mentioned embodiment. First, in the above embodiment, when the LED 10R, LED 10B, and LED 10G are scattered on the upper surface of the guide member 30 (substrate 22), an ionizer (not shown) may be used to LED 10R, LED 10B, and LED 10G remove electricity. Thereby, it is possible to prevent the LED 10R, the LED 10B, and the LED 10G from adhering to areas other than the opening 32R, the opening 32B, and the opening 32G of the guide member 30.

In addition, in the above embodiment, the light-emitting layer 12R1, light-emitting layer 12R2, etc. of LED 10R, LED 10B, and LED 10G are two layers, and the semiconductor layers of P layer 12P1, P layer 12P2, and N layer 12N are three layers, but it is also The light-emitting layer can be three or more layers. When the light-emitting layer is three or more N layers (N is an integer of 3 or more), the number of semiconductor layers may be (N+1) or more. When the number of light-emitting layers is set to N layers (N is an even number of 4 or more), the number of semiconductor layers may also be set to (N+1) layers. In addition, when the number of light-emitting layers is set to N layers (N is an odd number of 3 or more and/or an even number of 4 or more), the semiconductor layer is (N+1) or more.

In addition, LED 10R, LED 10B, and LED 10G are rectangular parallelepiped shapes, but as shown in FIG. 6(B), cylindrical red LED 11R, blue LED 11B, and green LED 11G may be manufactured. For example, the red LED 11R is formed by sequentially laminating a P layer 13P1, a light emitting layer 13R1, an N layer 13N, a light emitting layer 13R2, and a P layer 13P2 in the T direction. The semiconductor layers of LED 11R, LED 11B, and LED 11G are also symmetrical in the T direction, so the same effect as the above embodiment can be obtained. In addition, as an example, the green LED 11G has the largest cross-sectional area and the lowest height, the blue LED 11B has the smallest cross-sectional area and the highest height, and the red LED 11R has a middle cross-sectional area and a middle height. As described above, the shapes of LED 11R, LED 11B, and LED 11G are different. Therefore, when LED 11R, LED 11B, and LED 11G are arranged on substrate 22, the same LED 11R, LED 11B, and LED 11G can be used as guide member 30. 11R, LED 11B, and LED 11G opening guide members to efficiently arrange LED 11R, LED 11B, and LED 11G in a desired configuration. In addition, as shown in FIG. 6(C), it is also possible to manufacture a prismatic red LED 11RA whose cross-sectional shape is a regular hexagon. In addition, micro LEDs having an arbitrary polygonal cross-sectional shape can also be manufactured.

In addition, in the above-mentioned embodiment, the LED 10R, LED 10B, and LED 10G are scattered on the upper surface of the guide member 30. On the other hand, as shown in FIG. 7(A) corresponding to FIG. 2(B), the area where the LED 10R, LED 10B, and LED 10G are provided on the upper surface of the substrate 22 may be provided with LED 10R, LED 10B, and recess 22a, recess 22b, and recess 22c of LED 10G. Fig. 7(B) is a cross-sectional view of Fig. 7(A), as shown in Fig. 7(B), in the recessed portion 22a, recessed portion 22b, and recessed portion 22c, respectively in the P layer with LED 10R, LED 10B, LED 10G The terminal portion 26A to the terminal portion 26I are formed at positions facing the N layer, and the terminal portion 26A to the terminal portion 26I are connected to the control portion 24 of FIG. 2(A) via wiring 28A or the like. In the above modification, only LED 10R, LED 10B, and LED 10G can be accommodated in concave portion 22a, concave portion 22b, and concave portion 22c, respectively. Therefore, when a plurality of LEDs 10R, LED 10B, and LED 10G are scattered on the substrate 22 In the case of the surface, only the LED 10R, the LED 10B, and the LED 10G are accommodated in the concave portion 22a, the concave portion 22b, and the concave portion 22c, respectively. Therefore, without using the guide member 30, the LED 10R, the LED 10B, and the LED 10G can be efficiently arranged in a desired configuration on the upper surface of the substrate 22.

In the above-mentioned modification, the LED 10R, the LED 10B, and the LED 10G are respectively arranged in the concave portion 22a, the concave portion 22b, and the concave portion 22c such that the side surfaces are in contact with the substrate 22. Therefore, it is possible to display an image using light of sufficient light intensity emitted from the sides of the LED 10R, LED 10B, and LED 10G. In addition, as shown in FIG. 7(C), a concave portion 22d, a concave portion 22e, and a concave portion 22f may be provided on the upper surface of the substrate 22. The concave portion 22d, the concave portion 22e, and the concave portion 22f may be aligned with each other in the longitudinal direction (T direction). The upper surface of the substrate 22 accommodates the LED 10R, the LED 10B, and the LED 10G in a vertical manner. Furthermore, in FIG. 7(C), the figure shows that the LED 10R, LED 10B, and LED 10G are housed protruding from the upper surface of the substrate 22, but it can also be set to match the long sides of the LED 10R, LED 10B, and LED 10G. The length in the direction is the length (depth) in the Z direction of the concave portion 22d, the concave portion 22e, and the concave portion 22f. In addition, when setting the length (depth) in the Z direction of the concave portion 22d, the concave portion 22e, and the concave portion 22f, it is not necessary to set so that the light-emitting layers of the LED 10R, LED 10B, and LED 10G all emit light, as long as the LED 10R, LED 10B , The number of light-emitting layers in contact with the substrate among the light-emitting layers of LED 10G can be set in the same manner in LED 10R, LED 10B, and LED 10G. Furthermore, when the lengths in the radial direction of the LED 10R, LED 10B, and LED 10G are shorter than the lengths in the radial direction of the recess 22d, the recess 22e, and the recess 22f, for example, the LED 10G and the recess 22d are present. The situation inside the recess 22d. However, at this time, for example, since the length in the radial direction is greatly different, there is a low possibility that the LED 10G in the concave portion 22d is in contact with the substrate 22, and the LED 10G does not emit light. In addition, even if the LED 10G is inserted into the recess 22d, the length in the radial direction is greatly different, so the LED 10G will fall off from the recess 22d. Therefore, even if LEDs having different lengths in the radial direction (for example, 10G) are accommodated in recesses that should not be accommodated (for example, recesses 22d), the LEDs are generally unlikely to emit light.

In addition, as shown in FIG. 7(D), when the cylindrical LED 11R, LED 11B, and LED 11G of FIG. 6(B) are used, the upper surface of the substrate 22 may be formed to accommodate the LED 11R and LED 11B, respectively. , LED 11G cylindrical side-shaped recess 22h, recess 22i, recess 22g. In the above example, if the LED 11R, the LED 11B, and the LED 11G are scattered, the LED 11R, the LED 11B, and the LED 11G are each efficiently arranged in the recess 22h, the recess 22i, and the recess 22g of the substrate 22.

Next, the second embodiment will be described with reference to FIGS. 8(A) to 17(B). In addition, in FIGS. 8(A) to 17(B), parts corresponding to FIGS. 1(A) to 6(A) are assigned the same reference numerals, and detailed descriptions thereof are omitted. FIG. 8(A) shows a first micro LED unit (hereinafter referred to as LED unit) 42 in which a plurality of micro LEDs that emit red light, blue light, and green light are combined in this embodiment. The LED unit 42 is composed of a first light-emitting diode (hereinafter referred to as red LED) 40R (first light-emitting portion) that emits red light and a first light-emitting diode (hereinafter referred to as blue LED) that emits blue light 40B (the second light-emitting part), the first light-emitting diode that emits green light (hereinafter referred to as green LED) 40G (the third light-emitting part), the second green LED 40G1 (the third light-emitting part), the second blue The LED 40B1 (second light-emitting part) and the second red LED 40R1 (first light-emitting part) are joined along the T direction, which is the joining direction of the light-emitting layer and the semiconductor layer of each LED. The red LED 40R is formed by sequentially stacking the P layer 12P1 (first layer), the light emitting layer 12R1, and the N layer 12N (second layer) along the T direction, and the blue LED 40B is formed by sequentially stacking the P layer 14P1 (third layer) along the T direction. ), a light-emitting layer 14B1 and an N layer 14N (fourth layer). The green LED 40G is formed by stacking a P layer 16P1 (fifth layer), a light-emitting layer 16G1, and an N layer 16N (sixth layer) in the T direction.

In addition, the green LED 40G1, the blue LED 40B1, and the red LED 40R1 are formed by inverting the green LED 40G, the blue LED 40B, and the red LED 40R in the T direction, respectively. In the LED unit 42, the green LED 40G and the green LED 40G1 (third light-emitting part) have an N-layer 16N (second semiconductor layer) between the N-layer 16N (second semiconductor layer) of the green LED 40G1 and the light-emitting layer 16G1 of the green LED 40G. Semiconductor layer). In the above configuration, even if the green LED 40G and the green LED 40G1 are arranged in the center of the LED unit 42, the semiconductor layers and the light-emitting layers of the green LED 40G and the green LED 40G1 can be arranged symmetrically in the T direction.

The LED unit 42 is a rectangular parallelepiped with a square cross-sectional shape and elongated in the T direction. In addition, in the LED unit 42, P layer 12P1, P layer 14P1, P layer 16P1, P layer 16P1, P layer 14P1, P layer 12P1, N layer 12N, N layer 14N, N layer 16N, N layer 16N, and N layer 14N The, N layers 12N are respectively symmetrical to the straight line 18A (line symmetry) that becomes the center in the T direction. At this time, when the LED unit 42 is installed on the substrate 22A (refer to FIG. 9(A)) in order to manufacture an image display device using the LED unit 42, the LED unit 42 is installed on the substrate while being reversed in the T direction. On 22, the LED unit 42 is made to emit three-color light without changing the wiring pattern not shown, and further without changing the voltage applied to the wiring. Therefore, the arrangement of the LED units 42 on the substrate 22 can be performed efficiently.

In addition, in the LED unit 42, the red, blue, and green light emitting layers 12R1, 14B1, 16G1, 16G1, 14B1, and 12R1 are also symmetrical in the T direction. Therefore, even if the LED unit 42 is installed reversely in the T direction, the color tone does not change. In addition, a green LED 40G and a green LED 40G1 are arranged in the center of the LED unit 42. Among the red, blue, and green light, green light (with the center at 555 nm) has the highest relative visibility. Therefore, by arranging the green LED 40G and the green LED 40G1 in the center, the center becomes brighter and the brightness The balance is good. However, the LED unit 42 can individually control the voltage supplied to the red LED 40R, the red LED 40R1, the blue LED 40B, the blue LED 40B1, the green LED 40G, and the green LED 40G1. The red LED 40R and the red LED 40R can be controlled separately. The light intensity of LED 40R1, blue LED 40B, blue LED 40B1, green LED 40G, and green LED 40G1 does not necessarily have to be placed in the center.

Next, FIG. 8(B) shows the second LED unit 42A. The LED unit 42A is formed by joining the first red LED 10R, the first blue LED 10B, the green LED 10G, the second blue LED 10B, and the second red LED 10R in the T direction. However, the second blue LED 10B and the second red LED 10R are inverted in the T direction with respect to the first blue LED 10B and the first red LED 10R, respectively. Furthermore, the red LED 10R and the blue LED 10B are as described in the first embodiment, the semiconductor layer and the light emitting layer are symmetrical in the T direction, so the second blue LED 10B and the second red LED 10R have two P layers and The symbols of the two luminescent layers are exchanged.

In the LED unit 42A, the P layer 12P1, the P layer 12P2, ... the P layer 12P2, the P layer 12P1, and the N layer 12N, ... the N layer 12N are symmetrical to the straight line 18B that becomes the center in the T direction, respectively. In addition, in the LED unit 42A, the three-color light-emitting layer 12R1, light-emitting layer 12R2, light-emitting layer 14B1, light-emitting layer 14B2, light-emitting layer 16G1, light-emitting layer 16G2, light-emitting layer 14B2, light-emitting layer 14B1, light-emitting layer 12R2, and light-emitting layer 12R1, respectively Symmetric in the T direction. At this time, when the LED unit 42A is used to manufacture the image display device, even if the LED unit 42A is installed on the substrate so as to be inverted in the T direction, the wiring pattern (not shown) is not changed. When the voltage applied to the wiring is changed, the LED unit 42A is made to emit light of three colors. Therefore, the arrangement of the LED units 42A on the substrate can be efficiently performed. In addition, the color tone does not change.

In addition, FIG. 8(C) shows the third LED unit 42B. The LED unit 42B is formed by joining the first red LED 40R, the first blue LED 40B, the green LED 10G, the second blue LED 40B1, and the second red LED 40R1 in the T direction. The LED unit 42B is also a P layer 12P1, P layer 14P1, ... P layer 14P1, P layer 12P1, and N layer 12N, N layer 14N, ... N layer 12N, respectively, symmetrical to a straight line 18C centered in the T direction. In addition, in the LED unit 42B, the three-color light emitting layer 12R1, the light emitting layer 14B1, the light emitting layer 16G1, the light emitting layer 16G2, the light emitting layer 14B1, and the light emitting layer 12R1 are symmetrical in the T direction, respectively. At this time, when the image display device is manufactured using the LED unit 42B, even if the LED unit 42B is installed on the substrate with the T direction reversed, the wiring pattern not shown in the figure is not changed, and the application is not changed. In the case of the wiring voltage, the LED unit 42B emits three colors of light. In addition, the color tone does not change.

In addition, FIG. 8(D) shows the fourth LED unit 44. The LED unit 44 includes a first red LED 10R, a spacer portion 46A, a first blue LED 10B, a spacer portion 46B, a green LED 10G, a spacer portion 46C, a second blue LED 10B, and a spacer portion. 46D and the second red LED 10R are joined along the T direction. The spacer part 46A to the spacer part 46D having the same structure and the same size are, for example, a base material used in the manufacture of LED 10R, LED 10B, and LED 10G or a part thereof. The spacer part 46A to the spacer part 46D are The part where no light is generated (black part or so-called black matrix part). In addition, the second blue LED 10B and the second red LED 10R are the symbols of two P layers and two light-emitting layers with respect to the first blue LED 10B and the first red LED 10R, respectively. The blue LED 10B (the second light-emitting part) has a P layer 14P1 (third layer), a light-emitting layer 14B1, an N layer 14N (a fourth layer), a light-emitting layer 14B2, and a P layer 14P2 (the third layer) arranged in the T direction. )Structure. In addition, the blue LED 10B has a P layer 14P1 (third layer) and a light emitting layer 14B1 arranged on one end in the T direction, and a light emitting layer 14B2 and a P layer 14P2 (third layer) are arranged on the other end. The LED unit 44 is, for example, a square with a width of about 20 μm to 100 μm in cross section, and a quadrangular prism shape with a height (length) of about 300 μm to 700 μm.

In the LED unit 44, the P layer 12P1, the P layer 12P2, ... the P layer 12P1 and the N layer 12N, the N layer 14N, and the N layer 12N are respectively symmetrical to a straight line 18D that becomes the center in the T direction. In addition, in the LED unit 44, the three-color light-emitting layer 12R1, light-emitting layer 12R2, light-emitting layer 14B1, light-emitting layer 14B2, light-emitting layer 16G1, light-emitting layer 16G2, light-emitting layer 14B2, light-emitting layer 14B1, light-emitting layer 12R2, light-emitting layer 12R1, and The spacer portion 46A to the spacer portion 46D are symmetrical in the T direction, respectively. At this time, when the LED unit 44 is used to manufacture the image display device, even if the LED unit 44 is installed on the substrate with the T-direction inverted, the wiring pattern not shown in the figure will not be changed. When the voltage applied to the wiring is changed, the LED unit 44 is caused to emit light of three colors. Therefore, the arrangement of the LED units 44 on the substrate can be performed efficiently. In addition, the color tone does not change.

As described above, the LED unit 42, the LED unit 42A, the LED unit 42B, and the LED unit 44 are each a rectangular parallelepiped with a square cross-sectional shape and elongated in the T direction. Furthermore, the external shape of the LED unit 42, LED unit 42A, LED unit 42B, and LED unit 44 may be an elongated cylindrical shape or an elongated polygonal column shape. In addition, as long as the LED unit 42, LED unit 42A, LED unit 42B, and LED unit 44, as long as the semiconductor layers (P layer, N layer) and the light-emitting layers of each color are symmetrically arranged in the T direction, the semiconductor layers (P layer, N layer) Layers) and the number and arrangement of light-emitting layers of each color are arbitrary.

FIG. 9(A) shows a full-color image display device 20A using the LED units 42 of this embodiment. FIG. 9(B) shows a full-color image display device 20B using the LED units 42A of this embodiment. FIG. 10(A) shows a full-color image display device 20C each using the LED units 44 of this embodiment. The image display device 20A, the image display device 20B, and the image display device 20C include a display portion, respectively, on the upper surface of a substantially rectangular substrate 22A, a substrate 22B, and a substrate 22C including an insulator, and LEDs are arranged in a matrix and fixed Unit 42, LED unit 42A, LED unit 44; and control unit 24A, control unit 24B, control unit 24C, each of the plurality of LED units 42, LED unit 42A, LED unit 44 on/off and light intensity control. Furthermore, in Figure 9(A), Figure 9(B), Figure 10(A) and the drawings referred to below, for ease of description, the LED unit 42, LED unit 42A, and LED unit 44 are enlarged to be quite larger than The actual size is indicated. Hereinafter, the X-axis and Y-axis are taken along the long-side direction and the short-side direction of the substrate 22A, the substrate 22B, and the substrate 22C, respectively. In this embodiment, as an example, the T direction which is the joining direction of the LED unit 42, the LED unit 42A, and the LED unit 44 is the X direction.

For example, the control unit 24C may individually control the light intensity of any of the LEDs 10R, LED 10B, and LED 10G, which are five in total, in each LED unit 44. The control unit 24A can individually control the light intensities of the light-emitting layers in the LED 40R, LED 40R1, LED 40G, LED 40G1, LED 40B, and LED 40B1 in each LED unit 42.

In this embodiment, the LED unit 42, the LED unit 42A, and the LED unit 44 are two rows of LED units 42 and LED units 42A arranged in the X direction along a straight line parallel to the X axis at a predetermined pitch in the X direction. The LED unit 44 is arranged in a checkered pattern with a half pitch in the X direction. The pitch of the arrangement in the X direction of the LED unit 42, the LED unit 42A, and the LED unit 44 is, for example, about 1.1 times the length (height) of the LED unit 42, the LED unit 42A, and the LED unit 44 in the X direction. The LED unit 42, The pitch of the arrangement of the LED unit 42A and the LED unit 44 in the Y direction is, for example, about 1.5 to 2 times the width of the cross-sectional shape of the LED unit 42, the LED unit 42A, and the LED unit 44. The number of arrays in the X direction and Y direction of the LED unit 42, the LED unit 42A, and the LED unit 44 are about 200 and 1000, respectively. Furthermore, the arrangement and number of the LED units 42, the LED units 42A, and the LED units 44 are arbitrary. For example, a row of the LED units 42, the LED units 42A, and the LED units 44 arranged in the X direction can be directly arranged in the Y direction. The arrangement of the state of parallel movement.

In addition, as shown in FIG. 10(B), in the area where the LED unit 44 is provided on the upper surface of the substrate 22C of the image display device 20C, LED 10R, LED 10B, LED 10G, and LED 10B, P layer 12P1, P layer 12P2, ... P layer 12P1 and N layer 12N, N layer 14N, ... N layer 12N of LED 10R (refer to FIG. 8(D)) Wiring 28A to wiring 28I and wiring 28F to which voltage is applied Wire 28A. In addition, between the wiring 28A to the wiring 28I and the corresponding LED 10R, LED 10B, and LED 10G, the same material as the terminal portion 26A to the terminal portion 26I of FIG. 2(B) is formed including a material that can be soldered by heating Or a conductive adhesive terminal part (not shown). The control unit 24C individually controls the voltages applied to the wiring 28A to the wiring 28I, etc., for each of the two light-emitting layers in the LED 10R, the LED 10B, and the LED 10G in the plurality of LED units 44. As a result, an arbitrary image can be displayed in full color and with high definition using the display unit. Similarly, in the image display device 20A and the image display device 20B, an arbitrary image may be displayed in full color using the display unit.

Next, with reference to the flowchart of FIG. 11, an example of the manufacturing method of the LED unit 44 and the image display device 20C of this embodiment is demonstrated. For the production, the same production equipment (not shown) as in the first embodiment is used. Furthermore, the LED unit 42, the LED unit 42A, the LED unit 42B, the image display device 20A, and the image display device 20B can also be manufactured through the same steps.

First, in step 102A of FIG. 11, a semiconductor device manufacturing process is used to manufacture three types of disk-shaped substrates of LED 10R, LED 10B, and LED 10G that constitute the LED unit 44 of FIG. 8(D). The surfaces of 48A, base 48B, and base 48C, as shown in FIG. 12(A), are laminated with P layer 12PA, P layer 14PA, P layer 16PA, light emitting layer 12RA, light emitting layer 14BA, light emitting layer 16GA, N layer 12NA, N layer 14NA, N layer 16NA, light emitting layer 12RB, light emitting layer 14BB, light emitting layer 16GB and P layer 12PB, P layer 14PB, P layer 16PB. Thus, two wafers 46R1 for red micro LEDs, 46R2 (first substrate), two wafers 46B1 for blue micro LEDs, 46B2 (second substrate), and green micro LEDs are manufactured. One wafer 46G (third substrate) for LEDs.

Next, in step 130, as shown in FIG. 12(B), five wafers 46R1, 46B1, 46G, 46B2, and 46R2 are passed through an insulating adhesive 48A and an adhesive 48B, adhesive 48C, and adhesive 48D are bonded. Furthermore, in step 132, as shown in FIG. 13(A), the substrate 48A of the lowermost red LED wafer 46R1 is separated (removed) by etching or the like, and an assembly 50 of a plurality of LED units 44 is manufactured. , And cut the broken portion 52 of the assembly 50 by a cutting device (not shown). Thereby, as shown in FIG. 13(B), it is possible to manufacture a plurality of LED units 44 having a structure in which LED 10R, LED 10B, LED 10G, and spacer parts 46A to 46D are laminated. Part of the wafer 46B1, the wafer 46G, the wafer 46B2, the base 48B, the base 48C, the base 48B, and the base 48A of the wafer 46R2 becomes the spacer portion 46A to the spacer portion 46D, respectively. According to the manufacturing method of the LED unit 44, the LED unit 44 with a multilayer structure can be efficiently manufactured.

Then, in step 106A, as shown in FIG. 14(A), the substrate 22C, the first guide member 30A, and the second guide member 30B of FIG. 16(A) of the image display device 20C are manufactured. In the area 23 on the upper surface of the substrate 22C where the LED unit 44 is arranged (for example, the positions are predetermined based on the ends in the X direction and the Y direction of the substrate 22C), wirings 28A to 28I and terminal portions are respectively formed (Refer to Figure 10(B)). In addition, the control unit 24C is also manufactured. The guide member 30A has approximately the same size as the substrate 22C. On the guide member 30A, in the same arrangement as that of the LED units 44 of FIG. 10(A), a plurality of arrays capable of accommodating the LED units 44 are formed in a matrix. Rectangular opening 52. The opening 52 is formed slightly larger than the shape of the side surface of the corresponding LED unit 44.

In this embodiment, as an example, it is assumed that the guide member 30 is still mounted on the substrate 22. In addition, the guide member 30A may be removed from the substrate 22 after the LED unit 44 is mounted. The thickness of the guide member 30A around the opening 52 is about the width of the side of the cross section of the LED unit 44. In addition, between two adjacent openings 52 of the guide member 30A, as shown in FIGS. 15(B) and 15(C), inclined portions 54A and 54B are formed that gradually decrease in the X direction toward the opening 52 And the inclined portion 54C and the inclined portion 54D that gradually decrease in the Y direction toward the opening 52. The LED unit 44 is smoothly accommodated in the opening 52 by the inclined portion 54A to the inclined portion 54D.

Then, in step 134, in the area 23 of the substrate 22C where the LED unit 44 is arranged, the substrate 22C is positioned such that the opening 52 of the guiding member 30A faces each other, and the positioning of the guiding member 30A is performed on the substrate 22C, as shown in FIG. 14(B) As shown, the guide member 30A is arranged and fixed on the upper surface of the substrate 22C. As an example, when the second guide member 30B described later is not used, similarly to steps 112 to 116 in FIG. 3, as shown in FIG. 14(B), a plurality of LED units are scattered on the upper surface of the guide member 30A 44, as shown in FIG. 15(A), on the upper surface of the substrate 22C in the plurality of openings 52 of the guide member 30A, the LED units are arranged such that the side surfaces of the LED units 44 are in contact with the upper surface of the substrate 22C. 44. As shown in FIG. 15(B) and FIG. 15(C), the LED unit 44 located at the position B1 and the position B2 is smoothly accommodated in the corresponding opening 52 via the inclined portion 54A and the inclined portion 54B of the guide member 30A. Inside. After that, the operation shifts to step 118A in FIG. 11.

Here, a case will be described in which, in order to more efficiently house the LED unit 44 in the opening 52 of the guide member 30A, as shown in FIG. 16(A), the second guide member 30B is used. On the second guide member 30B, in the same arrangement as the plurality of openings 52 of the first guide member 30A, there are formed LED units 44 in the longitudinal direction arranged in the normal direction of the upper surface of the substrate 22C. Over multiple openings 56. In other words, the shape of the opening 56 is slightly larger than the cross-sectional shape of the LED unit 44. In addition, in the area adjacent to the opening 56 of the upper surface of the second guide member 30B, there are also formed inclined portions 58A and 58B that gradually descend toward the opening 56. On the bottom surface of the second guide member 30B (with the substrate In the area adjacent to the opening 56 of the surface facing 22C, an inclined portion 58C and an inclined portion 58D (which may be chamfered portions) that are smaller than the inclined portion 58A and the inclined portion 58B are formed.

At this time, in step 136, the end in the -X direction of the opening 56 of the second guide member 30B is substantially coincident with the end in the -X direction of the opening 52 of the first guide member 30A. 2 The distance between the bottom surface of the guide member 30B and the substrate 22C is slightly smaller than the height of the LED unit 44, and the second guide member 30B is positioned relative to the first guide member 30A. At this time, a drive unit 60 (not shown) that moves the second guide member 30B in the X direction, the Y direction, and the normal direction of the substrate 22C is used.

In the next step 138, as shown in FIG. 16(A), a plurality of LED units 44 are scattered on the upper surface of the second guide member 30B arranged above the substrate 22C and the first guide member 30A. As a result, the plurality of LED units 44 respectively pass through the opening 56 via the inclined portion 58A and the inclined portion 58B of the second guide member 30B. As shown in FIG. 16(B), the end of the LED unit 44 that has passed through the opening 56 is in contact with the end of the opening 52 of the first guide member 30A in the −X direction. In this state, in step 140, the second guide member 30B is moved relative to the first guide member 30A in the +X direction indicated by the arrow B3 by the drive unit 60. Then, by the movement of the second guide member 30B, as shown in FIG. 17(A), the LED units 44 in the opening 52 of the first guide member 30A respectively rotate in the clockwise direction, and finally, as shown in FIG. 17(B) As shown in ), the LED units 44 in the opening 52 of the first guide member 30A are housed in the opening 52 in a posture in which the side surface is in contact with the substrate 22C. Thus, the plurality of LED units 44 on the upper surface of the substrate 22C are arranged in a desired configuration.

In the next step 118A, by heating the substrate 22C from the bottom surface, the terminal portion (not shown) of the substrate 22C (and wiring 28A to wiring 28I in FIG. 10(B)) is soldered to the LED unit 44 The corresponding P layer or N layer of the LED 10R, LED 10B, and LED 10G fix the LED unit 44 on the upper surface of the substrate 22C. After that, in step 124A, the second guide member 30B is removed, and the cover glass covering the LED unit 44 is installed, etc., thereby manufacturing the image display device 20C.

As described above, in the present embodiment, by spreading a plurality of LED units 44 on the upper surface of the second guide member 30B, it is possible to fill the desired amount in the opening 52 of the first guide member 30A on the upper surface of the substrate 22C. It is configured to efficiently arrange the LED units 44. At this time, since the P layer 12P1, P layer 12P2,...P layer 12P1, N layer 12N, N layer 14N,...N layer 12N are symmetrical in the T direction, the LED unit 44 is symmetrical in the T direction with respect to the opening 52 of the guide member 30A. The LED unit 44 is housed in a reversed direction (X direction), and the LED 10R, LED 10B, and LED 10G of the LED unit 44 can be made in the same manner without changing the voltage applied to the wiring 28A to the wiring 28I. Glow. Therefore, the image display device 20 can be manufactured more efficiently.

In addition, since the three-color light-emitting layer 12R1, light-emitting layer 12R2, ..., the light-emitting layer 12R1 is also symmetrical in the T direction of the LED unit 44, even if the LED unit 44 is housed in reverse in the T direction with respect to the opening 52 of the guide member 30A, The color tone of the image display device 20C also does not change. As described above, the LED unit 44 of this embodiment is a light-emitting element that includes a plurality of light-emitting layers 12R1, 12R2, and 14B1, 14B2, and 16G1 that emit red light, blue light, or green light. , The light-emitting layer 16G2, and a plurality of P-layers 12P1, P-layer 12P2, etc., and N-layers 12N joined to the light-emitting layer 12R1, ..., the light-emitting layer 16G2 to emit light in the light-emitting layer 12R1, ... the light-emitting layer 16G2 when a voltage is applied , N layer 14N, etc. (semiconductor layer), and multiple light-emitting layers 12R1, etc., multiple P layers 12P1, etc., and N layer 12N, etc. (semiconductor layers) are sequentially juxtaposed and joined in the T direction (joining direction).

When the LED unit 44 is used to manufacture the image display device 20C, as long as the LED units 44 are scattered on the upper surface of the guide member 30A or the guide member 30B on the substrate 22C, the LED units 44 can be efficiently arranged. The required configuration. Furthermore, since the three-color light-emitting layer and semiconductor layer of the LED unit 44 are respectively symmetrical in the T direction, even if the LED unit 44 is provided on the substrate 22C inverted in the T direction, it can be used without changing wiring, etc. The LED unit 44 emits three colors of light in the same tone.

In addition, the image display device 20C of the present embodiment includes an LED unit 44 and a substrate 22C on which wiring 28A to wiring 28I for supplying power to the light-emitting layer 12R1, light-emitting layer 12R2, etc. of the LED unit 44 are formed and the LEDs are bonded. Unit 44. The image display device 20C can efficiently arrange the LED units 44 on the substrate 22C, and therefore can be efficiently manufactured.

In addition, the manufacturing method of the LED unit 44 of the present embodiment includes: step 102A, in which the light-emitting layer 12R1, the light-emitting layer 12R2, etc. are combined with the P layer 12PA and the P layer to form three-color LED 10R, LED 10B, and LED 10G. 12PB, etc. and the N layer 12NA are joined side by side in the T direction to manufacture red LED, blue LED and green LED wafer 46R1, wafer 46B1, and wafer 46G; step 130, make wafer 46R1, wafer 46B1, The wafer 46G is bonded in parallel in the T direction via the insulating adhesive 48A and the adhesive 48B; and in step 132, the bonded wafer 46R1, the wafer 46B1, and the wafer 46G are aligned perpendicular to the T direction. Make an incision in the direction. According to the manufacturing method, the multi-layer three-color LED unit 44 can be manufactured efficiently and accurately.

In addition, the manufacturing method of the image display device 20C of the present embodiment includes: step 138, dispersing a plurality of LED units 44 on the substrate 22C; and step 118A, disassembling the scattered LED units 44 by welding with heating It is joined to the substrate 22C. According to the above-mentioned manufacturing method, the LED units 44 can be efficiently arranged in a desired configuration by dispersing the LED units 44, so that the image display device 20C can be efficiently manufactured.

Furthermore, in the aforementioned embodiment, the following modifications can be made. First, in the above embodiment, the LED unit 44 emits three colors of light, but the LED unit 44 may emit at least monochromatic light. In addition, the LED unit 44 may have a micro LED that emits white light.

In addition, in the above embodiment, as shown by the dotted line in FIG. 10(B), a suction hole 22Ca may be formed in the area of the substrate 22C where the LED unit 44 is provided. When the LED unit 44 is fixed (welded) to In the case of the terminal portion of the substrate 22C, etc., the LED unit 44 is sucked through the suction hole 22Ca by a vacuum pump not shown. Thus, the LED unit 44 can be more stably fixed to the substrate 22C. In addition, in the above-mentioned embodiment, the light-emitting part is a light-emitting diode, but the light-emitting part may be a semiconductor laser or the like.

10B, 40B, 40B1: Blue LED (second light emitting part) 10G, 40G, 40G1: Green LED (3rd light emitting part) 10R, 10RA, 11RA, 40R, 40R1: Red LED (first light-emitting part) 11B, 11G, 11R: LED 12N: N layer (layer 2) 12NA, 13N, 14NA, 16NA: N layer 12N1: 1N layer 12N2: 2N layer 12P, 12PA, 12PB, 13P1, 13P2, 14PA, 14PB, 16PA, 16PB: P layer 12P1, 12P2: P layer (layer 1) 12R1, 12R2, 12RA, 12RB, 13R1, 13R2, 14BA, 14BB, 14B1, 14B2, 16GA, 16GB, 16G1, 16G2: light-emitting layer 14N: N layer (layer 4) 14P1, 14P2: P layer (layer 3) 16N: N layer (6th layer) 16P1, 16P2: P layer (5th layer) 18, 18A～18D: straight line 20, 20A～20C: Image display device 22, 22A～22C: substrate 22a～22i: concave part 22Ca: Suction hole 23, 23B, 23G, 23R: area 24, 24A, 24B, 24C: control section 26A～26I: Terminal part 28A～28I: Wiring 30: Guiding member 30A: Guide member (1st guide member) 30B: Guide member (Second guide member) 32B, 32G, 32R, 56: opening 42: LED unit 42A: LED unit (2nd LED unit) 42B: LED unit (3rd LED unit) 44: LED unit (4th LED unit) 46A～46D: Spacer part 46B1, 46B2: Blue LED wafer (second substrate) 46G: Green LED wafer (3rd substrate) 46R1, 46R2: Red LED wafer (1st substrate) 48A～48D: substrate/adhesive 50: aggregate 52: Cut part (opening) 54A～54D, 58A～58D: Inclined part 60: Drive 102, 102A, 104, 106, 106A, 108, 112, 114, 116, 118, 118A, 120, 122, 124, 124A, 130, 132, 134, 136, 138, 140: steps B1, B2: location B3: Arrow T: direction

Fig. 1 (A) is an enlarged perspective view showing the three-color micro LED of the first embodiment, Fig. 1 (B) is a diagram showing the red micro LED in Fig. 1 (A) and its modification, Fig. 1 (C) ) Is an enlarged cross-sectional view showing a state where the red micro LED of FIG. 1(A) is arranged on a substrate. 2(A) is a front view showing the image display device of the above-mentioned embodiment, and FIG. 2(B) is an enlarged view showing a part of the image display device of FIG. 2(A). Fig. 3 is a flowchart showing an example of a method of manufacturing the image display device of the embodiment. Fig. 4(A) is a perspective view showing a state where the guide member is arranged above the substrate, and Fig. 4(B) is a perspective view showing a state where the guide member is provided on the upper surface of the substrate. FIG. 5(A) is a perspective view showing a state where a plurality of micro LEDs are scattered on the upper surface of a guide member, and FIG. 5(B) is a perspective view showing a state where a plurality of micro LEDs are arranged on the upper surface of a substrate. Fig. 6(A) is a perspective view showing a state where the guide member is removed from the substrate, Fig. 6(B) is an enlarged perspective view showing a three-color micro LED of a modification, and Fig. 6(C) is another modification An enlarged perspective view of the micro LED. FIG. 7(A) is an enlarged view showing a part of an image display device according to another modified example, FIG. 7(B) is a cross-sectional view of FIG. 7(A), and FIG. 7(C) is a view showing the same as that of FIG. 7( B) A corresponding cross-sectional view of another modification. FIG. 7(D) is a cross-sectional view corresponding to FIG. 7(B) of an example using the micro LED of FIG. 6(B). Figures 8 (A), 8 (B), 8 (C) and 8 (D) respectively show the first micro LED unit, the second micro LED unit, the third micro LED unit and the second embodiment 4 Side view of the micro LED unit. FIG. 9(A) is a front view showing the image display device using the first micro LED unit, and FIG. 9(B) is a front view showing the image display device using the second micro LED unit. FIG. 10(A) is a front view showing an image display device using a fourth micro LED unit, and FIG. 10(B) is an enlarged cross-sectional view of a part of FIG. 10(A). 11 is a flowchart showing an example of a method of manufacturing the image display device of the second embodiment. FIG. 12(A) is an enlarged side view showing five wafers for light-emitting diodes, and FIG. 12(B) is an enlarged side view showing a state where five wafers are bonded. FIG. 13(A) is an enlarged side view showing a state where the lowermost substrate is separated from five wafers, and FIG. 13(B) is an enlarged side view showing a state where the micro LED unit has been cut out. 14(A) is a perspective view showing a state where the first guide member is arranged above the substrate, and FIG. 14(B) is a perspective view showing a state where a plurality of micro LED units are scattered on the upper surface of the first guide member . 15(A) is a perspective view showing a state in which micro LED units are arranged on a plurality of openings of the first guide member, and FIG. 15(B) is an enlarged plan view showing a part of the image display device of FIG. 15(A) , Fig. 15(C) is an enlarged cross-sectional view showing a part of Fig. 15(B). 16(A) is an enlarged cross-sectional view showing a state in which a second guide member is arranged above the first guide member, and a plurality of micro LED units are scattered on the upper side, and FIG. 16(B) is an enlarged cross-sectional view showing a An enlarged cross-sectional view of a state in which the ends of each micro LED unit are housed in the opening of the first guide member. Fig. 17(A) is an enlarged cross-sectional view showing a state where the second guide member is relatively moved in the X direction with respect to the first guide member, and Fig. 17(B) is an enlarged cross-sectional view showing the arrangement in the opening of the first guide member An enlarged cross-sectional view of the state with multiple micro LED units.

10R: Red LED

12N: N layer (layer 2)

12P1, 12P2: P layer (layer 1)

12R1, 12R2: light-emitting layer

22: substrate

28A~28C: Wiring

30: Guiding member

Claims (28)

A light-emitting element includes: A plurality of light emitting layers respectively emit light; and A plurality of semiconductor layers are joined to the plurality of light-emitting layers in such a way that when a voltage is applied, the light is emitted in the plurality of light-emitting layers; and The plurality of the light-emitting layers and the plurality of the semiconductor layers are sequentially arranged in a predetermined direction and joined. The light-emitting element described in claim 1, wherein The number of the plurality of semiconductor layers is greater than the number of the plurality of light-emitting layers. The light-emitting element described in claim 1 or claim 2 in the scope of the patent application, wherein The number of the plurality of semiconductor layers is one more than the number of the plurality of light-emitting layers. The light-emitting element described in claim 2 or claim 3 in the scope of the patent application, wherein The plurality of semiconductor layers include a first semiconductor layer and a second semiconductor layer with mutually different conduction forms, The first semiconductor layer and the second semiconductor layer are arranged symmetrically in the predetermined direction, respectively. The light-emitting element according to any one of claims 2 to 4 in the scope of the patent application, wherein The plurality of semiconductor layers include a first semiconductor layer and a second semiconductor layer with mutually different conduction forms, The plurality of the light-emitting layers and the plurality of the semiconductor layers are formed in the predetermined direction in which the first semiconductor layer, the light-emitting layer, the second semiconductor layer, the light-emitting layer, and the first semiconductor layer are sequentially arranged 1 The light-emitting part of the semiconductor layer. The light-emitting element according to claim 5 of the scope of patent application, wherein The light-emitting portion is between the second semiconductor layer and the light-emitting layer, and further includes the second semiconductor layer. The light-emitting element according to any one of claims 4 to 6 in the scope of patent application, wherein The plurality of light-emitting layers include a first light-emitting layer and a second light-emitting layer that emit light of mutually different wavelengths, and The first semiconductor layer includes a first layer bonded to the first light-emitting layer and a third layer bonded to the second light-emitting layer, and the second semiconductor layer includes a first layer bonded to the first light-emitting layer. Two layers and a fourth layer joined to the second light-emitting layer, The light-emitting portion includes a first light-emitting portion and a second light-emitting portion each including the first light-emitting layer and the second light-emitting layer, The first light-emitting layer and the second light-emitting layer are arranged symmetrically in the predetermined direction. The light-emitting element according to any one of claims 4 to 6 in the scope of patent application, wherein The plurality of light-emitting layers include a first light-emitting layer and a second light-emitting layer that emit light of mutually different wavelengths, and The first semiconductor layer includes a first layer bonded to the first light-emitting layer and a third layer bonded to the second light-emitting layer, and the second semiconductor layer includes a first layer bonded to the first light-emitting layer. Two layers and a fourth layer joined to the second light-emitting layer, The light-emitting portion includes a first light-emitting portion and a second light-emitting portion each including the first light-emitting layer and the second light-emitting layer, In the second light-emitting portion, the third layer, the second light-emitting layer, the fourth layer, the second light-emitting layer, and the third layer are sequentially arranged side by side in the predetermined direction, and form. The light-emitting element described in claim 8 of the scope of patent application, wherein In the second light-emitting portion, the third layer and the second light-emitting layer are arranged on one end side, and the second light-emitting layer and the third layer are arranged on the other end side in the predetermined direction. The light-emitting element described in claim 8 or claim 9 in the scope of the patent application, wherein The plurality of light-emitting layers include a third light-emitting layer that emits light of a wavelength different from that of the first light-emitting layer and the second light-emitting layer, and The first semiconductor layer includes a fifth layer bonded to the third light-emitting layer, and the second semiconductor layer includes a sixth layer bonded to the third light-emitting layer, The light-emitting portion includes a third light-emitting portion, and the third light-emitting portion includes the third light-emitting layer, The first light emitting part, the second light emitting part, and the third light emitting part are arranged symmetrically in the predetermined direction. The light-emitting element according to any one of claims 7 to 10 in the scope of the patent application, wherein The light-emitting part has a different size according to the color of the light emitted in the corresponding light-emitting layer. The light-emitting element according to any one of claims 7 to 11 in the scope of patent application, wherein At least one of the first light-emitting portion or the second light-emitting portion is a cylinder or a polygonal prism having a circular or polygonal bottom surface and a height in the predetermined direction. The light-emitting element according to claim 12, wherein At least one of the first light-emitting part or the second light-emitting part differs in at least one of the bottom surface or the height according to the color of the light emitted in the corresponding light-emitting layer. The light-emitting element according to any one of claims 1 to 13 in the scope of the patent application, wherein The plurality of the light-emitting layers include a green light-emitting layer that emits light of a green wavelength, and the green light-emitting layer is arranged in the center in the predetermined direction. A display device includes: The light-emitting element according to any one of claims 1 to 14 in the scope of the patent application; and On the substrate, wiring for supplying power to the light-emitting layer is formed, and the light-emitting element is bonded. The display device described in claim 15 of the scope of patent application includes: The guide portion guides the light-emitting element to a predetermined position that connects the light-emitting element and the wiring. The display device according to claim 16, wherein The guide portion is formed in such a manner that the side surface of the light emitting element contacts the substrate. The display device according to claim 16, wherein The guide portion is formed in such a manner that the bottom surface of the light emitting element contacts the substrate. A method for manufacturing a light-emitting element, which manufactures the light-emitting element according to any one of claim 1 to claim 14 in the scope of the patent application, the manufacturing method of the light-emitting element includes the following steps: To form the light-emitting element, a plurality of the light-emitting layers and a plurality of the semiconductor layers are juxtaposed and joined in the predetermined direction; and The plurality of the light-emitting layers and the plurality of the semiconductor layers that have been joined are cut in a direction crossing the predetermined direction. The method of manufacturing a light-emitting element according to claim 19, wherein The plurality of light-emitting layers include a first light-emitting layer, a second light-emitting layer, and a third light-emitting layer that emit light of mutually different wavelengths, and The semiconductor layer includes a plurality of layers joined to the first light emitting layer, the second light emitting layer, and the third light emitting layer, respectively, The joining includes the following steps: The first light-emitting layer, the second light-emitting layer, and the third light-emitting layer are joined to the corresponding semiconductor layer to produce a first light-emitting portion, a second light-emitting portion, and a third light-emitting layer. Part of the first substrate, second substrate, and third substrate; and The first substrate, the second substrate, and the third substrate are aligned in the predetermined direction and bonded via an insulating adhesive. A method for manufacturing a display device, which manufactures the display device according to any one of claim 15 to claim 18 in the scope of the patent application, the manufacturing method of the display device includes the following steps: Scatter a plurality of the light-emitting elements on the substrate; and The scattered light-emitting elements and the substrate are joined. The manufacturing method of the display device as claimed in claim 21, wherein The dispersal includes a step of dispersing a plurality of the light-emitting elements having mutually different sizes on the substrate. For example, the manufacturing method of the display device described in claim 21 or claim 22 of the scope of the patent application includes the following steps: At a predetermined position connecting the light-emitting element and the wiring, a guide portion capable of accommodating a plurality of openings for the light-emitting element is formed along the substrate, The dispersal includes the step of dispersing a plurality of the light-emitting elements on the guide part in such a manner that the light-emitting elements are respectively accommodated in the plurality of openings of the guide part. According to the manufacturing method of the display device according to claim 23, the dispersing includes the following steps: The light-emitting element is fixed to the substrate through a suction hole of the substrate so that the light-emitting element located at the predetermined position does not deviate. According to the manufacturing method of the display device according to claim 23 or claim 24 of the scope of patent application, the guiding part includes: A first guide portion to guide the light-emitting element such that the bottom surface of the light-emitting element is in contact with the substrate; and The second guide portion, which is movable and formed with the opening, connects the light-emitting element whose bottom surface is in contact with the substrate by using the first guide portion to be in contact with the substrate on the side surface. Contact; and The dispersal includes the following steps: Guiding the light-emitting element to the opening of the second guide part through the first guide part such that the bottom surface of the light-emitting element contacts the substrate; and The second guide portion is moved so that the side surface of the light emitting element is in contact with the substrate. For example, the manufacturing method of the display device according to any one of claim 23 to claim 25 in the scope of patent application includes the following steps: After joining the light-emitting element and the substrate, the guide portion is removed from the substrate. The manufacturing method of the display device according to any one of claims 21 to 26 in the scope of the patent application, wherein the joining includes the following steps: The light-emitting element and the substrate are joined by heat treatment. According to the method for manufacturing a display device according to any one of claim 21 to claim 27 in the scope of the patent application, the dispersal includes the following steps: The light-emitting elements that have been neutralized by the ion generator are scattered on the substrate.

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